KR101829665B1 - Apparatus for processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for preventing a process gas from flowing down below a substrate support. A substrate processing apparatus according to an embodiment of the present invention includes a reaction chamber on which a space for performing substrate processing is formed, a substrate support on which the substrate is mounted, a process gas ejecting body provided on the substrate support and ejecting the process gas toward the substrate, And a backside gas regulator for regulating the injection of the inert gas to prevent the process gas from penetrating into the space between the support and the reaction chamber. In addition, the backside gas control member may include a ring provided directly below the space between the substrate support and the inner wall of the chamber and having a space portion for diffusing the inert gas introduced from the outside into the space, and an inert gas diffused through the space portion, And a plurality of jet holes for jetting into a space between the inner wall of the chamber.

Description

[0001] Apparatus for processing substrate [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for preventing a process gas from flowing down below a substrate support.

Generally, a semiconductor device and a flat panel display are manufactured by depositing a plurality of thin films on an upper surface of a substrate and etching them to form elements of a predetermined pattern. That is, a thin film is deposited on the entire surface of a substrate by using a deposition apparatus, and a thin film is etched by using an etching apparatus so that the thin film has a predetermined pattern, thereby manufacturing a semiconductor device or a flat panel display.

The substrate processing apparatus can form a thin film through various processes. A chemical vapor deposition (CVD) process in which a thin film is formed by supplying a gaseous raw material into a reaction chamber into which a substrate is introduced can be used. In addition, the plasma can be used in accordance with the enlargement of the substrate, the miniaturization and the high integration of the device, and the etch process as well as the thin film deposition can be performed using the gas activated by the plasma.

1 is a cross-sectional view of a substrate processing apparatus for processing a plurality of substrates.

The substrate processing apparatus 10 for processing a plurality of substrates s includes a reaction chamber 100 for forming a reaction space therein, a plurality of gas injection bodies 200 (for example, a shower head) for supplying gas, And a substrate support 300 having a substrate mounting part and provided with a rotary motion and a vertical movement device.

The substrate is deposited on the substrate support 300, which is rotated in the reaction chamber 100, and the thin film is deposited by receiving the process gas supplied from each gas spraying body 200. The gases supplied from the gas jet 200 are pumped out of the reaction chamber 100 through the annular pumping passage 400 provided in the lower portion of the reaction chamber 100. However, some of the gas may be pumped into the lower side of the substrate support 300 and may be deposited on the lower surface of the substrate support 300 to contaminate the inner surface of the chamber 100. Therefore, in the conventional substrate processing apparatus 10, a non-reactive gas such as argon (Ar) and nitrogen (N) is supplied through the lower part of the reaction chamber 100 to the backside gas backside gas to prevent process gases from entering the underside of the substrate support 300.

However, most multi-substrate processing apparatuses have a dual pumping structure that pumping on both sides of the substrate support 300, respectively. Due to the pumping pressure, the backside gas is not evenly distributed around the substrate support, and there is a problem that the pumping pressure concentrates on a lower pumping channel portion.

Korean Published Patent 2011-0041665

SUMMARY OF THE INVENTION The present invention is directed to preventing process gases introduced at the top of the substrate support from entering the bottom of the substrate support. It is also an object of the present invention to uniformly distribute the backside gas introduced at the bottom of the substrate support around the substrate support. The present invention also provides a method of manufacturing a semiconductor device, including the steps of:

A substrate processing apparatus according to an embodiment of the present invention includes a reaction chamber on which a space for performing substrate processing is formed, a substrate support on which the substrate is mounted, a process gas ejecting body provided on the substrate support and ejecting the process gas toward the substrate, And a backside gas regulator for regulating the injection of the inert gas to prevent the process gas from penetrating into the space between the support and the reaction chamber.

In addition, the backside gas control member may include a ring provided directly below the space between the substrate support and the inner wall of the chamber and having a space portion for diffusing the inert gas introduced from the outside into the space, and an inert gas diffused through the space portion, And a plurality of jet holes for jetting into a space between the inner wall of the chamber.

The backside gas control member may include a channel space formed in an inner wall of the chamber corresponding to a space between the substrate support and the chamber inner wall and diffusing the inert gas introduced from the outside and an inert gas diffused through the channel space, And a plurality of spray holes for spraying into the space between the inner walls of the chamber.

The ring is divided into a plurality of pumping passages for discharging the process gas, and the passive space is divided into a plurality of pumping passages for discharging the process gas.

The substrate support table is provided with a stepped step formed with a larger circumference of the lower side wall than the upper side wall of the substrate support. And a baffle plate disposed corresponding to the step jaw and protruding in a step difference direction of the substrate support.

Embodiments of the present invention can evenly distribute the backside gas around the substrate support, whether or not there is a pumping path around the substrate support. Further, according to the embodiment of the present invention, contamination of the lower portion of the substrate support can be prevented by suppressing the process gas introduced from the upper portion of the substrate support into the lower portion of the substrate support. Thus, the cleaning efficiency inside the reaction chamber can be increased.

1 is a cross-sectional view of a substrate processing apparatus for processing a plurality of substrates.
2 is a schematic block diagram of a substrate processing apparatus having a ring according to an embodiment of the present invention.
3 is a top perspective view of a major portion of a substrate processing apparatus having a ring formed therein in accordance with an embodiment of the present invention.
4 is a view illustrating a plurality of separate rings according to an embodiment of the present invention.
5 is a schematic configuration diagram of a substrate processing apparatus having a flow path space in a wall of a reaction chamber according to an embodiment of the present invention.
6 is a top perspective view of a main part of a substrate processing apparatus in which a flow path space is formed inside a wall according to an embodiment of the present invention.
7 is a view showing a state in which a substrate support is formed in a stepped shape according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

FIG. 2 is a schematic structural view of a substrate processing apparatus having a ring according to an embodiment of the present invention, and FIG. 3 is a top perspective view of a main portion of the substrate processing apparatus shown in FIG.

2 and 3, a substrate processing apparatus 10 according to a preferred embodiment of the present invention includes a reaction chamber 100, a process gas spraying body 200, a substrate support 300, a backside gas regulator, And a gas supply source 600.

The reaction chamber 100 provides a space for performing a predetermined process on the substrate such as a deposition process. When the process gas injection body is coupled to the upper portion of the reaction chamber 100, a certain space is formed inside the reaction chamber 100 . Since the space inside the reaction chamber 100 is generally formed in a vacuum atmosphere, a pump 410 is provided outside the reaction chamber 100. The pump is connected to an annular ring-shaped pumping passage 400 formed outside the bottom surface of the reaction chamber 100. In the present embodiment, twin pumping is exemplified in which two pumps 410 are disposed on both sides in the radial direction of the reaction chamber 10, and pumping is performed on both lower sides of the reaction chamber 100. However, the embodiment of the present invention is not limited to this, and can be applied to any substrate processing apparatus having one pump or two or more pumps. A through hole is formed in the bottom surface of the reaction chamber 100 to receive the rotation axis 320 of the substrate support 300. The substrate s flows into and out of the reaction chamber 100 through a gate valve (not shown) provided on the side wall of the reaction chamber 100.

The substrate support 300 is for supporting a plurality of substrates s in the reaction chamber 100 and includes a support plate 310 and a rotation axis 320. The support plate 310 is formed in a circular plate shape and horizontally arranged in the reaction chamber 100, and the rotation axis 320 is vertically arranged and provided at a lower portion of the support plate 310. The rotating shaft 320 extends outwardly through the through-hole of the reaction chamber 100 and is connected to driving means such as a motor (not shown) to rotate and lift the support plate 310. In order to prevent the vacuum inside the reaction chamber 100 from being released through the space between the rotation axis 320 and the through hole, the rotation axis 320 is surrounded by the bellows.

On the upper portion of the support plate 310, a plurality of substrate seating portions are formed along the circumferential direction. The substrate seating part is formed in a concave shape so that the substrate s can be supported on the support plate 310 without being detached even if the support plate 310 is rotated. A heater (not shown) is provided under the support plate 310 to heat the substrate s to a predetermined process temperature. In the drawings of the embodiment of the present invention, the number of the substrates located on the support plate 310 is four, but not limited to four.

The process gas jet 200 is for jetting a process gas such as a raw material gas, a reactive gas and a purge gas to a plurality of substrates s placed on a substrate mounting portion of the substrate support 300, And injects the process gas toward the substrate < RTI ID = 0.0 > s. ≪ / RTI > In the embodiment of the present invention, a showerhead is shown as an example of the process gas jet 200, but the present invention is not limited thereto, and various types of process gas jet such as jet nozzles can be used.

The process gas jetting body 200 is disposed along the circumferential direction with respect to the center point of the substrate support 300. Each process gas jet 200 receives gas from an external process gas source (not shown) through a process gas supply line. In addition, a gas diffusion space is formed in each of the process gas injection bodies 200 so that gas can be uniformly injected over the entire area of the substrate s, and the process gases introduced through the process gas supply pipe are gas diffusion And is then injected into the substrate s through a plurality of gas injection holes formed in the lower surface of the process gas injection body 200.

In addition, each of the process gas jet bodies 200 disposed along the circumferential direction injects a source gas, a purge gas, a reactive gas, and a purge gas onto the substrate s. The substrate s placed on the substrate support 300 rotating in the reaction chamber 100 is sequentially exposed to the upper process gases to perform thin film deposition.

Although not shown, it is also possible to place a central jet body between the process gas jet bodies 200 so that the central jet ejects the purge gas so that the source gas and the reactive gas are flowed or mixed through the center of the substrate support 300 . That is, the source gas sprayer for spraying the source gas and the reactive gas sprayer for spraying the reactive gas are generally arranged on both sides in the radial direction of the substrate support table 300, and a central sprayer for spraying the purge gas therebetween When the purge gas is injected, the gas curtain is formed at the center portion, so that the source gas and the reactive gas can be prevented from intermingling at the center of the substrate support 300.

The process gases injected from the process gas injector 200 in the substrate processing apparatus 10 having the above-described configuration are injected into the reaction chamber 100 by the pump 410 provided at the lower side of the reaction chamber 100, A part of the process gas is deposited on the lower side of the substrate support 300 without being exhausted and the reaction gas in the reaction chamber 100 is exhausted to the inside of the reaction chamber 100. [ Contaminate, and generate particles.

The lower space of the substrate support 300 is filled with a non-reactive gas such as nitrogen (N ₂ ) or argon (Ar) to prevent the process gases from entering the lower portion of the substrate support 300. However, as described in the prior art, this non-reactive gas can not flow uniformly around the substrate support due to the pressure of the pump, and the problem is that the pressure is not concentrated evenly in the pumping passage of the pump connection portion where the pressure is lower have.

In order to solve the above problems, the present invention provides a backside gas regulator for uniformly distributing an inert gas, which is a non-reactive gas, in the lower periphery of the substrate support 300. Hereinafter, an inert gas (non-reactive gas) for preventing contamination of the interior of the reaction chamber from the process gas will be referred to as a backside gas. Hereinafter, the backside gas refers to a non-reactive gas which is at least one of argon (Ar), nitrogen (N ₂ ), and compounds thereof.

The backside gas regulator serves to uniformly inject the backside gas to the upper side of the reaction chamber in order to prevent the process gas from penetrating into the lower side of the reaction chamber 100 through the space between the substrate support and the reaction chamber.

As shown in FIGS. 2 and 3, the backside gas adjuster includes a space portion provided directly under the space between the substrate support and the inner wall of the chamber and diffusing the inert gas introduced from the outside into the interior thereof And a plurality of injection holes for injecting inert gas diffused through the space into a space between the substrate support and the inner wall of the chamber.

That is, a hollow ring 500 is provided at a lower portion of the substrate support along the gap between the substrate support 300 and the wall inner wall of the reaction chamber 100. The hollow ring 500 is positioned below the periphery of the substrate support, And a hollow ring surrounding the reaction chamber inner walls. Thereby inhibiting the downward flow of the process gas between the substrate support 300 and the inner wall of the reaction chamber 100. In the following description, the inner wall of the chamber refers to a side wall of the pumping passage 400 formed around the inner wall of the chamber and surrounding the substrate support, and the inner wall of the chamber closest to the substrate support is called the inner wall of the chamber.

The shape of the ring may vary depending on the shape of the reaction chamber. For example, the shape of the ring may be a quadrangular ring in the case of a quadratic column-shaped reaction chamber and an annular ring in the case of a cylindrical reaction chamber. do.

A plurality of injection holes 510 are provided on the ring 500. The inside of the ring 510 receives a backside gas from the backside gas supply source 600. The backside gas thus supplied is spread along the inside of the ring 510 and then is injected upward through the plurality of injection holes 510 . Therefore, despite the pressure difference of the plurality of pumping channels, the backside gas spreading along the inside of the ring 500 is guided through the plurality of gas injection holes 510, And the upper side between the reaction chamber walls, it is possible to effectively prevent the process gas indicated by the thick solid line from flowing down into the peripheral lower portion of the substrate support 300 and flowing down.

Further, the injection holes 510 are arranged at equal intervals, so that the backside gas is uniformly sprayed. The injection hole 510 may have various shapes such as a circular shape and a polygonal shape. Also, the ring 500 should be kept from contacting with the substrate support 300 for the process progress. Therefore, even if the substrate support is lowered to the lowest position, the ring 500 is installed at a position where the bottom surface of the substrate support and the upper surface of the ring do not touch each other.

The backside gas supply source 600 is a storage tank for supplying the backside gas into the inside of the ring 500 through the backside gas supply pipe 610. The backside gas supply source 600 is installed outside the reaction chamber 100.

3, the ring 500 is formed as a single ring. However, as shown in FIG. 4, the ring 500 may be formed as a plurality of separate rings 500a and 500b. A plurality of pumping flow paths are formed in the plurality of pumping flow paths for discharging the process gas to the outside of the chamber. When a plurality of separated pumping channels 400a and 400b connected to individual pumps are provided, a plurality of separate rings 500a and 500b corresponding to the respective pumping channels are provided.

The pumping pressure of each pumping channel may be varied according to the process conditions. Accordingly, the rings 500a and 500b adjacent to each pumping channel 400a and 400b are respectively provided. Accordingly, the amount of the backside gas injected from the respective rings 500a and 500b corresponding to the pressures of the respective pumping paths 400a and 400b can be controlled. For example, when the pressure of the first pumping passage 400a is greater than the pressure of the second pumping passage 400b, the pressure of the backside gas injected from the first ring 500a corresponding to the first pumping passage 400a The amount of the second ring is larger than the amount of the backside gas 500b of the second ring. For this purpose, when a plurality of separate rings 500a and 500b are provided as shown in FIG. 4, a backside gas supply source for supplying a backside gas to each ring should be provided.

Alternatively, the backside gas regulator may be implemented as a ring located below the periphery of the substrate support, but as another embodiment of the present invention, a backside gas regulator may be implemented inside the wall of the reaction chamber. This will be described later in conjunction with FIG. 5 and FIG.

FIG. 5 is a schematic structural view of a substrate processing apparatus having a flow path space inside a wall of a reaction chamber according to an embodiment of the present invention, and FIG. 6 is a top perspective view of a main portion of the substrate processing apparatus shown in FIG.

The backside gas adjuster includes a channel space (700) installed on an inner wall of the chamber corresponding to a space between the substrate support and the inner wall of the chamber, for diffusing the inert gas introduced from the outside, and an inert gas diffused through the channel space, And a plurality of spray holes 710 for spraying into the space between the inner wall of the chamber.

Therefore, the backside gas regulator, which is embodied as the channel space 700 inside the wall of the reaction chamber, has a hollow channel space in the form of a band along the inside of the wall of the reaction chamber opposite to the lower periphery of the substrate support. A plurality of spray holes 710 are formed in the inner wall of the wall of the reaction chamber along the flow path space 700. The shape of the flow path space may vary depending on the shape of the reaction chamber, and may be realized as a rectangular ring, an annular ring, or the like.

A backside gas is supplied from the backside gas supply source to the inside of the flow path space 700. The backside gas thus supplied spreads along the inside of the flow path space 700 inside the reaction chamber wall and then flows through the plurality of spray holes 710 And is ejected toward the periphery of the substrate support. Therefore, despite the pressure difference of the plurality of pumping channels, the backside gas spreading along the inside of the ring reacts with the substrate support 300 through the plurality of injection holes 710 as shown by the thin solid line arrows in FIGS. 5 and 6 By uniformly spraying between the walls of the chamber 100, it is possible to effectively prevent the process gas indicated by the thick solid line from penetrating into the lower portion of the substrate support and flowing down. At this time, the injection hole is formed such that the cross section of the injection hole is inclined upward so that the backside gas is injected upward. That is, the cross section of the injection hole formed in the wall of the reaction chamber is inclined upward, so that the cross section of the injection hole is formed to be upwardly inclined.

Further, the spray holes are arranged at equal intervals, so that the backside gas is uniformly sprayed. The injection hole may have various shapes such as a circular shape and a polygonal shape. The backside gas supply source supplies the backside gas into the flow path space through the supply pipe.

Meanwhile, although the channel space 700 is formed by a single number as described above, it may be realized by a plurality of channel spaces separated as described above. The pumping pressure of each pumping flow path can be changed according to the process conditions, and accordingly, the adjacent flow path spaces are provided for each pumping flow path. Therefore, it is possible to control the amount of backside gas injected in each flow path space corresponding to the pressure of each pumping flow path. For example, when the pressure of the first pumping passage is larger than the pressure of the second pumping passage, the amount of backside gas injected in the first passage space corresponding to the first pumping passage is more than that of the second pumping passage Can be implemented.

On the other hand, when the backside gas is injected through the ring shown in FIGS. 2, 3 and 4 or the flow path space shown in FIGS. 5 and 6, the process gas injected by the process gas injection body is prevented from penetrating into the lower portion of the substrate support, As shown in FIG. 7, the peripheral wall of the substrate support can be realized with a stepped structure. That is, the stepped step is formed so that the lower sidewall is stepped more greatly than the upper sidewall of the substrate support. Thus, by placing such stepped jaws, it is possible to primarily prevent the progress of the process gas that is injected from the process gas delivery body and descends downwardly around the substrate support.

7A is a view showing a substrate support 300 having a stepped jaw formed in a structure in which the backside gas adjuster is formed by a ring 500. The process gas indicated by a solid line is interrupted by the stepped jaw 300a It can be seen that it flows less to the bottom of the substrate support. When the pumping flow path is implemented as a baffle plate, the baffle plate 100b is opposed to the stepped jaw so as to be spaced apart from the upper surface. That is, the baffle plate 100b is positioned to correspond to the stepped jaw and protrudes in the stepped jaw direction of the substrate support. The baffle plate 100b is positioned above the stepped jaws, spaced about the upper sidewall of the substrate support, such that the process gas does not flow down the substrate support. If there is no baffle plate protruding above the step jaw, the process gas can easily flow between the side wall of the substrate support and the sidewall gap of the reaction chamber. To prevent this, a baffle plate protruding above the step jaws of the substrate support is placed to prevent bottom penetration of the process gas. 7 (b) is a view showing a substrate support having a stepped jaw formed in a structure in which the backside gas adjuster is formed as a flow path space 700. In FIG.

On the other hand, the supply amount of the backside gas injected through the backside gas regulator is determined in proportion to the supply amount of the process gas supplied through the process gas injection body. The greater the amount of process gas supplied, the greater the amount of backside gas supplied. On the contrary, the smaller the amount of process gas supplied, the less the amount of backside gas supplied.

Also, it is not necessary to maintain a ratio of 1: 1 of the supply amount of the process gas and the backside gas. When the backside gas is injected in an amount equal to or greater than the process gas, the backside gas is injected more than necessary. On the contrary, when the backside gas is injected in a much smaller amount than the process gas, It is difficult to achieve the purpose. Therefore, it is preferable that the ratio of the supply amount of the process gas and the backside gas is 100%: (20% to 50%).

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

100: reaction chamber 200: gas injection body
300: substrate support 400: pumping channel
500: ring 600: backside gas source
700: Euro space

Claims (8)

delete A reaction chamber in which a space portion in which a substrate processing is performed is formed;
A substrate support on which the substrate rests;
A process gas sprayer installed on the substrate support for spraying a process gas toward the substrate;
And a backside gas regulator capable of spraying an inert gas upward from a lower periphery of the substrate support to prevent the process gas from penetrating through the space between the substrate support and the reaction chamber to the lower side of the reaction chamber and,
The backside gas regulator,
A ring having a space portion disposed directly below the space between the substrate support and the chamber inner wall for diffusing the inert gas introduced from the outside and an inert gas diffused through the space portion into a space between the substrate support and the inner wall of the chamber A substrate processing apparatus comprising a plurality of ejection holes. A reaction chamber in which a space portion in which a substrate processing is performed is formed;
A substrate support on which the substrate rests;
A process gas sprayer installed on the substrate support for spraying a process gas toward the substrate;
And a backside gas regulator capable of spraying an inert gas upward from a lower periphery of the substrate support to prevent the process gas from penetrating through the space between the substrate support and the reaction chamber to the lower side of the reaction chamber and,
The backside gas regulator,
A channel space provided on an inner wall of the chamber corresponding to a space between the substrate support and the inner wall of the chamber for diffusing an inert gas introduced from the outside and a plurality of inert gas diffused through the channel space into a space between the substrate supporter and the inner wall of the chamber Wherein the substrate processing apparatus further comprises: The substrate processing apparatus according to claim 2, wherein the ring is divided into a plurality of pumping flow paths for discharging the process gas. The substrate processing apparatus according to claim 3, wherein the flow path space is divided into a plurality of pumping flow paths for discharging the process gas. 4. The apparatus of claim 3, wherein the injection hole is formed to be upwardly inclined to a space between the substrate support and the inner wall of the chamber. The substrate processing apparatus according to claim 2 or 3, wherein the substrate support table is provided with a stepped step formed with a larger periphery of the lower side wall than an upper side wall of the substrate support. The substrate processing apparatus according to claim 7, further comprising a baffle plate positioned corresponding to the step jaw and protruding in a step difference direction of the substrate support.

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