KR102046109B1 - Substrate treating apparatus - Google Patents

Substrate treating apparatus Download PDF

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Publication number
KR102046109B1
KR102046109B1 KR1020150138873A KR20150138873A KR102046109B1 KR 102046109 B1 KR102046109 B1 KR 102046109B1 KR 1020150138873 A KR1020150138873 A KR 1020150138873A KR 20150138873 A KR20150138873 A KR 20150138873A KR 102046109 B1 KR102046109 B1 KR 102046109B1
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South Korea
Prior art keywords
gas
exhaust
exhaust passage
process chamber
drive shaft
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KR1020150138873A
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Korean (ko)
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KR20170039839A (en
Inventor
최정열
공철민
구종수
박종오
서태욱
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주식회사 원익아이피에스
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Priority to KR1020150138873A priority Critical patent/KR102046109B1/en
Publication of KR20170039839A publication Critical patent/KR20170039839A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber body configured to form an internal space in which a plasma is generated and a substrate processing step is performed, as a process chamber; A gas injection unit supplying a process gas to the process chamber; A susceptor disposed in the chamber body to support the substrate; A drive shaft connected to the susceptor and extending downward and driven to move in an up and down direction to move the susceptor up and down; An exhaust unit forming an exhaust passage for discharging the process gas in the process chamber to the outside; A bellows formed in a corrugated pipe form folded and unfolded as the drive shaft moves up and down to form a variable space in communication with the process chamber to block outside air; A gas injector configured to inject a first gas from the variable space toward the exhaust passage to form a flow field upward in the variable space; It is configured to include, it provides a substrate processing apparatus that does not flow downward from the process chamber into the variable space surrounded by the bellows immediately to the outside through the second exhaust passage to further improve the exhaust efficiency of the exhaust gas.

Description

Substrate Processing Unit {SUBSTRATE TREATING APPARATUS}

The present invention relates to a substrate processing apparatus, and more particularly, to minimize the generation of vortices in the exhaust of the process gas from the process chamber to achieve uniform exhaust, and to process the substrate by the powder generated in the process chamber The present invention relates to a substrate processing apparatus for lowering a defective rate generated during the process.

During the core process of manufacturing a semiconductor, the wafer W is placed in the process chamber 10c, and plasma is generated in the process chamber 10c to produce a plasma enhanced chemical vapor deposition (PECVD) or etching process. ), Washing, ALD, sputtering and the like are included.

As illustrated in FIG. 1, the substrate processing apparatus 1 in which such a processing step is performed includes a lower body 12 provided with a susceptor 30 for receiving a wafer W, and a lower body 12. A chamber lid 14 covering the upper opening, a shower head 20 installed in the chamber lid 14 to supply process gas from the process gas supply part G, and an electrode for supplying RF energy into the chamber for plasma generation It consists of.

Here, the lower body 12 and the chamber lid 14 form the chamber body 10, and the inner space of the chamber body 10 forms the process chamber 10c. The chamber body 10 is provided with a slit valve 18 that opens and closes the slit-shaped passage 18p through which the substrate on which the process is performed flows in and out by the drive unit D.

The shower head 20 is formed so that the process gas flows uniformly toward the susceptor, and at the same time, the RF energy source is configured to be delivered into the process chamber 10c. Each of the components is surrounded by an insulating ring to isolate the RF energy from the outside and is insulated from the external components.

The susceptor 30 mounts the substrate W on the upper side during a process such as deposition or etching by plasma, and serves as a heating plate for heating the substrate to a predetermined temperature as necessary. The susceptor 30 is connected to the drive shaft 40 so that the drive shaft 40 moves in the vertical direction together with the drive motor 40d in the vertical direction. Accordingly, when the substrate is introduced into the process chamber 10c through the slit passage 18p, the susceptor 30 moves downward to provide a space in which the substrate W is introduced, and the substrate W is processed. When placed on the mounting pin 18 of the chamber 10c, the susceptor 30 moves upward to seat the substrate W on the upper surface of the susceptor 30.

In this way, since the susceptor 30 moves up and down 30d in the process chamber 10c, and at the same time, the process chamber 10c must maintain a closed state to block the movement of fluid from the outside air, the drive shaft 40 Is installed surrounded by bellows 50, similar to a corrugated pipe. That is, the upper end of the bellows 50 is coupled to the fixing plate 55 coupled to the lower body 12, and the lower end of the bellows 50 is connected and fixed to a mounting part (not shown) connected to the drive shaft 40. .

Accordingly, when the drive shaft 40 moves downward by the drive motor M, the space surrounded by the bellows 50 is communicated with the process chamber 10c by the unfolding of the bellows 50, thereby being sealed to the outside air. When the drive shaft 40 is moved upward by the driving motor M while maintaining the state, the variable space S3 surrounded by the bellows 50 is folded with the process chamber 10c when the bellows 50 is folded. Communicate and keep sealed to the outside.

Accordingly, the flow 79 of the process gas in the process chamber 10c moves 71 toward the first exhaust passage P1 extending downward, and the second exhaust passage horizontally extending from the first exhaust passage P1. P2 is flowed 72 and discharged 70E to the outside. If necessary, a pump for forcibly evacuating the second exhaust passage P2 may be connected and installed.

However, since the variable space S3 surrounded by the bellows 50 repeats contraction and expansion as the drive shaft 40 moves up and down, the hole 55a communicating with the first exhaust passage P1 is formed. Accordingly, the process gas in the chamber 10c is introduced into the space surrounded by the bellows 50 in the process of discharging the process gas in the process chamber 10c to the outside, and together with this, the process gas in the process chamber 10c is generated. Powder 88 is also introduced.

However, as shown in FIG. 2, the powder 88 is discharged to the outside together with the process gas, but a part of the powder 88 ′ is stuck to the inner wall of the bellows 50 to be folded and grows into particles. Inflows into the process chamber 10c during processing such as deposition and etching have been a serious cause of impairing substrate processing quality.

Therefore, the powder 88 generated during the treatment process in the process chamber 10c does not remain in the variable space S3 surrounded by the bellows 50, so that the powder 88 returns to the process chamber 10c during the treatment process. The necessity of eliminating the cause which introduce | transduces and impairs the processing quality of a board | substrate is increasing greatly.

On the other hand, attempts have been made to arrange two process chambers 10c in the substrate processing apparatus in order to improve the process efficiency in the space of a predetermined production line. In this case, the formation of the exhaust passages from the two process chambers 10c, respectively, complicates the exhaust structure and increases the cost of manufacturing the equipment. Therefore, forming a common second exhaust passage from the two process chambers 10c is required. desirable.

However, when the common second exhaust passage P2 is formed from two different process chambers 10c, the suction pressure acting on each of the second exhaust passages is difficult to be constantly controlled, so that each process chamber ( As the flow of exhaust gas exhausted from 10c is generated, the exhaust gas is not uniformly exhausted from the process chambers 10c disposed on the left and right sides, and thus the flow of the process gas remaining in the process chamber 10c is prevented. Influences have led to the problem of uneven treatment processes.

Therefore, there is an urgent need for a method of arranging the two process chambers 10c side by side and uniformly matching the exhaust flow amounts per unit time while eliminating the flow variation of the process gas through the common second exhaust passage P2.

The background art described above describes a configuration for contrasting with the present invention, and does not mean a known technology before the filing date of the present invention.

The present invention is to solve the above problems, to prevent the powder generated in the plasma process chamber of the substrate processing apparatus to be stuck in the corner of the space surrounded by the bellows to rise again during the processing process to reduce the processing quality of the substrate It aims to do it.

And, even if the two or more process chambers have an exhaust passage connected to each other, by minimizing the emission variation per unit time of the exhaust gas discharged from the two or more process chambers, the process gas state in each process chamber is equal to each other It aims to hold | maintain and to perform the process of processing a board | substrate uniformly in each process chamber.

In order to achieve the object as described above, the present invention comprises: a chamber body for forming an internal space in which a substrate processing step is performed as a process chamber; A shower head supplying a process gas to the process chamber; A susceptor disposed in the chamber body to support the substrate; A drive shaft connected to the susceptor and extending downward and driven to move in an up and down direction to move the susceptor up and down; An exhaust unit forming an exhaust passage for discharging the process gas in the process chamber to the outside; A bellows formed in a corrugated pipe form folded and unfolded as the drive shaft moves up and down to form a variable space in communication with the process chamber to block outside air; A gas injector configured to inject a first gas from the variable space toward the exhaust passage to form a flow field upward in the variable space; It provides a substrate processing apparatus comprising a.

As described above, the first gas is injected upward from the gas injector in the variable space surrounded by the bellows to form a flow field upward by the first gas in the variable space, whereby the exhaust gas from the process chamber is surrounded by the bellows. The exhaust gas may be discharged to the outside through the second exhaust passage immediately without being introduced downward, thereby further improving the exhaust efficiency of the exhaust gas.

At the same time, even if some of the exhaust gas flows from the process chamber into the variable space (including the interspace) by the first gas flow field formed by the first gas in the variable space surrounded by the bellows, it is immediately pushed into the exhaust passage. Since it moves, the efficiency of discharged to the outside air through the second exhaust passage is higher.

Above all, a shield pipe accommodated inside the bellows so that at least a portion of the inner portion of the corrugated pipe is not exposed in alignment with the drive shaft; It may be configured to include more.

As a result, when the driving shaft for vertically moving the susceptor is moved up and down, the bellows is folded and the height is reduced. By suppressing the generation of powder from the process chamber in the corrugated portion of the, it is possible to obtain an advantageous effect that can prevent the powder from growing into particles and entering the process chamber to cause a defect in the treatment process.

To this end, the height of the shield pipe is preferably determined by the compression height of the bellows according to the vertical displacement of the drive shaft. In this way, when the shield pipe is formed extending from the end of the bellows, when the drive shaft is moved upward by the movement distance of the susceptor to minimize the height of the bellows, all the corrugated portion of the bellows is covered by the shield pipe, It can almost completely prevent the formation of powder inside.

Here, the space between the drive shaft and the shield pipe may be determined in various ways, the width is formed to 10mm or less, the diameter of the gas injection port may be set to 1mm to 3mm.

On the other hand, it is preferable that the process gas is discharged from the process chamber to the outside through the exhaust passage in a state where the drive shaft is moved upward to a higher position than the position of the susceptor where the treatment process is performed. As described above, since the height of the bellows is lowered in the state where the susceptor is moved upward, the corrugated portion of the bellows may be covered by the shield pipe or the maximum, thereby minimizing the generation of powder inside the bellows.

The process chamber consists of two or more; The exhaust passage may include a first exhaust passage extending downward from each of the process chambers, and a second exhaust passage communicating to the outside while communicating the first exhaust passage in a horizontal direction. That is, exhaust gas or the like is exhausted from two or more process chambers by using one second exhaust passage.

At this time, the exhaust portion, the inner exhaust member is formed to surround a portion of the circumference of the drive shaft to form a first exhaust passage extending downward from the process chamber in the space between the drive shaft; An outer exhaust member disposed spaced apart from the inner exhaust member to form a bypass passage communicating with the first exhaust passage; It is configured to include, the exhaust gas may be configured to be exhausted to the outside air through the second exhaust passage via the bypass passage.

Accordingly, the exhaust passage includes a bypass passage where the flow is guided downward by the first exhaust passage and over the barrier rib having a predetermined height, so that the gas flows through the bypass passage in the longitudinal direction of the barrier rib (eg, The flow is evenly distributed in the circumferential direction, thereby eliminating the flow dislocation caused by the suction pressure acting from the second exhaust passage, thereby obtaining the effect of uniformly controlling the amount of exhaust gas per unit time from each process chamber. Can be.

On the other hand, the inner exhaust member may be formed with a wing extending over the bottom surface of the process chamber, and a downward extension extending downward from the wing in the form of a hollow pipe to form the first exhaust passage. As a result, the space provided between the drive shaft and the inner exhaust member may be simply formed as a first exhaust passage for exhausting gas from the process chamber by simply mounting the wing portion of the inner exhaust member to the chamber bottom in a form surrounding the drive shaft. Can be.

In addition, the outer exhaust member may be disposed on the outer side of the lower extension portion and has a partition extending upward, the partition may be formed higher than the upper surface of the second exhaust passage. Thereby, after the exhaust gas passes through the first exhaust passage from the process chamber, the bypass passage by the partition wall of the outer exhaust member can be simply installed before entering the second exhaust passage.

Here, the blocking film having a through portion for controlling the flow of the exhaust gas is formed extending from the partition wall, wherein the through portion formed in the blocking film does not have a cross-sectional area in the region close to the second exhaust passage is close to the second exhaust passage. It is preferable to form smaller than the cross-sectional area in the region.

As a result, a higher suction pressure may be applied to a portion of the barrier membrane close to the second exhaust passage to which suction pressure is applied, compared to a portion of the barrier membrane not close to the second exhaust passage, but at a barrier membrane close to the second exhaust passage. As the cross-sectional area of the penetrating portion is formed to be larger, the unit of exhaust gas exhausted through the penetrating portion of the exhaust film exhausted per unit time of the exhaust gas exhausted through the penetrating portion of the blocking membrane close to the second exhaust passage and not close to the second exhaust passage. By reducing the variation in the amount of exhaust gas per hour, the exhaust gas amount per unit time of the exhaust gas flowing into the second exhaust passage can be adjusted to be uniformly distributed along the direction around the drive shaft.

In addition, the first gas is made of a part or more of the components of the process gas, so that even if the first gas is introduced into the process chamber does not affect the processing process in the process chamber.

The term “process gas” described in this specification and claims is defined as the generic term for the gas supplied for the treatment process in the process chamber. In addition, the term 'exhaust gas' described in the present specification and claims is defined as the process gas located outside the process chamber.

That is, in the present specification and claims, the gas located in the variable space or interspace located below the process chamber is called 'exhaust gas', but when the gas located in the variable space or interspace enters the process chamber, As such, the 'exhaust gas' may again become a 'process gas'. In other words, the term 'process gas' and 'exhaust gas' are merely for convenience, and the terminology is classified according to the position. It may be used interchangeably.

In addition, the 'variable space' described in the present specification and claims is defined as the space S3 surrounded by the bellows, and the 'between space' is defined as the space S3 surrounded by the drive shaft and the shield pipe. Therefore, since the 'interspace' is included in the 'variable space', the term 'variable space' includes 'interspace'.

As described above, the present invention is directed to an upward flow field formed by injection of a first gas upward from a gas injector in a variable space surrounded by a bellows provided on a drive shaft for moving the susceptor up and down while maintaining a closed state of the process chamber. As a result, the exhaust gas is not discharged downward from the process chamber into the variable space surrounded by the bellows and is immediately discharged to the outside through the second exhaust passage, thereby obtaining an advantageous effect of further improving the exhaust efficiency of the exhaust gas.

In addition, the present invention, even if a portion of the exhaust gas flows into the variable space from the process chamber, by directly pushing the exhaust gas introduced by the upper flow field formed by the first gas in the variable space surrounded by the bellows directly into the exhaust passage, It is possible to improve the exhaust efficiency discharged through the second exhaust passage.

Above all, the present invention includes a shield pipe for blocking the process chamber and the inner wall of the bellows in a state where the height of the bellows is lowered so that the corrugated pipe of the bellows is covered by the shield pipe without being exposed to the exhaust gas, and thus, from the process chamber. By blocking the powder from entering into the corrugated corner of the bellows, the powder is introduced into the gap of the bellows, which gradually grows into particles and enters the process chamber, thereby preventing the processing process from failing. You can get it.

In addition, the present invention, the height of the shield pipe is determined by the compression height of the bellows according to the vertical displacement of the drive shaft, the drive shaft is moved upward by the movement distance of the susceptor, the processing in the state of the bellows height is minimum When the process is performed, all the corrugated portions of the bellows are covered by the shield pipe, thereby obtaining the advantage of almost completely preventing the powder from forming inside the bellows.

In the present invention, in exhausting the exhaust gas from the process chamber where the plasma is generated, the exhaust gas is partitioned between the first exhaust passage communicating downward from the process chamber and the second exhaust passage connecting the outside air. As the bypass passage is provided, the phenomenon in which the exhaust gas is concentrated locally while passing through the bypass passage is alleviated, thereby obtaining an advantageous effect of continuously discharging a uniform amount of exhaust gas.

Particularly, in the present invention, even when two or more process chambers are provided side by side, and the second exhaust passages of the process chambers communicate with each other in the horizontal direction, and exhaust gases are discharged, the exhaust gas passes through the bulkhead of the hollow circular cross section. By passing through, the emission per unit time of the exhaust gas from each process chamber is uniformly controlled, so that the treatment processes in two or more process chambers using the second exhaust passage in common can be maintained at an equal level with each other. Can be obtained.

1 is a longitudinal sectional view showing the structure of a conventional plasma process chamber;
2 is an enlarged view of a portion 'A' of FIG. 1;
3 is a longitudinal sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention;
4 and 5 are enlarged views of a portion 'B' of FIG. 4 showing an operating state according to an extended state of the bellows;
6 is a perspective view showing the configuration of the gas supply unit of FIG. 4;
7 is an enlarged view of a portion 'C' of FIG. 4;
8 is a perspective view of the inner exhaust member of FIG. 7;
9 is a perspective view of the outer exhaust member of FIG. 7;
10A to 10D are graphs of flow field analysis results in a space surrounded by bellows,
11A and 11B are graphs of flow field analysis results in a region transitioning from the first exhaust passage to the second exhaust passage.

Hereinafter, a substrate processing apparatus 100 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present invention, a detailed description of known functions or configurations will be omitted to clarify the gist of the present invention.

As shown in FIG. 3, the substrate processing apparatus 100 according to an exemplary embodiment of the present invention may include a chamber body 10 having a process chamber 10c in which plasma is generated therein, and a chamber body ( 10 is installed above the shower head 20 to supply process gas and supply RF energy, and the susceptor 30 mounted below the chamber body 10 to mount the substrate W on which the treatment process is performed. ), A drive shaft 40 connected to the susceptor 30 so as to move the susceptor 30 in the up-and-down direction 30d by a drive motor, and the process gas in the process chamber 10c, the top and bottom of the drive shaft 40. The bellows 210 to prevent leakage to the outside even during movement, the shield pipe 220 formed in a form surrounding the drive shaft to a predetermined height inside the upper end of the bellows 210, the shield pipe 220 and the drive shaft 40 The gas injector 230 for injecting the first gas 230a toward the interspace S3 ′ is provided. It is configured to hereinafter.

The chamber body 10 is installed to be rotatable with respect to the lower body 12 and the lower body 12 in which the process chamber 10c is formed in a hollow shape to open the opening of the process chamber 10c of the lower body 12. The chamber lid 14 to be covered, the support plate 16 fixedly installed in the process chamber 10c, and the mounting plate 16 fixed to the support plate 16 to mount the substrate W in a state where the susceptor 30 moves downward. The pin 18 is installed. In addition, the lower body 12 is provided with a slit-shaped passage (not shown) for introducing or discharging the substrate W having a rectangular or disc shape.

A suction pump (not shown) for forcibly discharging the gas inside to the process chamber 10c of the chamber body 10 is connected to the process chamber 10c, and the process chamber 10c during processing such as etching or deposition of the substrate W. The pressure of can be adjusted to a state lower than atmospheric pressure.

The shower head 20 is installed in the chamber lid 14, supplies the process gas supplied from the gas supply part G to the process chamber 10c at a flow rate required for plasma generation, and is insulated. RF energy is supplied from the internal space 10c. In this case, the RF energy supplied from the electrode is generally used at a frequency of 13.56 MHz, but the RF energy of a higher frequency may be supplied to increase the density of the plasma generated in the process chamber 10c, thereby improving process efficiency. .

The susceptor 30 mounts the substrate W on the upper side during the deposition or etching process in the process chamber 10c and maintains the temperature of the substrate W in a temperature range suitable for the treatment process. Heat it up.

Accordingly, while the substrate W is seated on the susceptor 30 of the substrate processing apparatus 100 and a processing process such as deposition or etching is performed, process gas and RF energy are supplied from the shower head 20 while Plasma is generated in the space between the shower head 20 and the susceptor 30.

The drive shaft 40 extends from the susceptor 30 to move 40d in the vertical direction by the drive motor M. For example, the drive motor M may be applied as a stepping motor.

Since the process chamber 10c needs to maintain a state of being cut off from outside air during the treatment process, the fixing plate 55 is fixed to the lower end of the chamber body 10 in which the driving shaft 40 moving up and down is fixed, and the driving shaft 40 In conjunction with the vertical movement of the bellows bellows 210 of the corrugated pipe is installed to be folded or unfolded.

That is, the upper end of the bellows 210 is fixed to the fixing plate 55, the lower end of the bellows 210 is fixed to the coupling plate 42 coupled to the drive shaft 40, the drive shaft 40 is moved downward When the distance between the fixing plate 55 and the coupling plate 42 is far away, the bellows 210 is unfolded, and when the drive shaft 40 moves upward, the distance between the fixing plate 55 and the coupling plate 42 decreases. As the 210 is folded, the closed state of the process chamber 10c is maintained by the space S3 surrounded by the bellows 210 while allowing the vertical movement of the drive shaft 40.

The bellows 210 is preferably formed of a high rigid material such as stainless so that the pressure in the process chamber 10c does not break even if the pressure in the process chamber 10c is different from the pressure of the outside air.

The shield pipe 220 is fixed to the bottom of the fixing plate 55 and extends downward. Accordingly, in a state in which the susceptor 30 descends downwardly 30d1 and the bellows 210 is unfolded as in the case where the substrate W is introduced into the process chamber 10c, as shown in FIG. Although the bottom surface of 220 is spaced apart from the fixing plate 42 by the distance indicated by E1, in the state where the susceptor 30 rises upward 30d2 and the bellows 210 is folded, the shield as shown in FIG. The bottom surface of the pipe 220 comes into close contact with or close to the top surface of the fixing plate 42.

That is, while the treatment process is being performed on the substrate W mounted on the susceptor 30 of the process chamber 10c, the bellows 210 is corrugated by the shield pipe 220 as shown in FIG. Since the inner surface is completely blocked or almost blocked from the process chamber 10c, the region into which the exhaust gas flows from the process chamber 10c becomes the interspace S3 ′ surrounded by the shield pipe 220. That is, since the exhaust gas flows into only the interspace S3 ′ among the variable spaces S3 surrounded by the bellows 210 by the shield pipe 220, powder is trapped on the inner surface of the bellows 210 having a corrugated pipe shape. The phenomenon can be fundamentally suppressed.

 Therefore, even when the exhaust gas or the fine powder 88 is introduced through the gap 55a of the fixing plate 55 during the treatment process or in the process of exhausting the exhaust gas from the process chamber 10c to the outside, Since the lower space of the fixing plate 55 becomes the interspace S3 'formed by the shield pipe 220 formed by the smooth inner surfaces 220s, the exhaust gas and the fine powder 88 are bellows 210. Entry into the inner wall of the corrugated pipe shape of the corrugated pipe is blocked, and is immediately discharged toward the second exhaust passage P2 via only the interspace S3 'below the fixing plate 55.

Through this, since the powder 88 from the process chamber is blocked from flowing into the corrugated portion of the bellows 210, it is possible to suppress the growth of the powder into particles on the corrugated inner surface of the bellows 210, thereby growing the particles Advantageous effects can be obtained that can be prevented from entering the process chamber and degrading the processing quality of the substrate.

Meanwhile, although the configuration in which the shield pipe 220 is fixed to the bottom surface of the fixing plate 55 is illustrated in the drawing, according to another embodiment of the present invention, the shield pipe 220 may be fixed to the upper frame of the bellows 210. In addition, although the figure illustrates the structure in which the shield pipe 220 is installed above the bellows 210, according to another embodiment of the present invention, the shield pipe 220 is fixed to the upper surface of the coupling plate 42, the bellows It may be installed below the 210. As such, the shield pipe 220 may be installed at various positions to prevent the inner surface of the bellows 210 from communicating with the process chamber 10c while the bellows 210 is folded.

The gas injector 230 injects the first gas 230a upward to form a flow field upward in the variable space S3 surrounded by the bellows 210. According to another embodiment of the present invention, the gas injection unit 230 may be provided in a state in which the shield pipe 220 is not installed, and the shield pipe 220 is in a state in which the gas injection unit 230 is not installed. It may be provided.

According to a preferred embodiment in which the shield pipe 220 and the gas injector 230 are installed together, the gas injector 230 is installed between the shield pipe 220 and the drive shaft 40 as shown in the drawing. The first gas 230 is sprayed toward the upper side of the space S3 ′ between the shield pipe 220 and the driving shaft 40 to form a flow field upward. This not only prevents the exhaust gas from flowing into the variable space S3 surrounded by the bellows 210 from the first exhaust passage P1 through the hole or the gap 55a of the fixing plate 55, but also simultaneously the process. The exhaust gas introduced from the chamber 10c into the interspace S3 'is moved upwards 76r toward the exhaust passage Pv to minimize the exhaust gas remaining in the interspace S3'.

Here, the shape of the space between the shield pipe 220 and the drive shaft 40 (circular ring in the example shown in the drawing) in order to uniformly spray the first gas upwardly into the space between the shield pipe 220 and the drive shaft 40. Gas supply frame 231 is disposed in the space S3 ′ between the shield pipe 220 and the drive shaft 40. In addition, the gas supply frame 231 is disposed at a position accommodated by the shield pipe 220. For example, the gas supply frame 231 may be disposed at a position having a predetermined gap d from the inner circumferential surface of the shield pipe 220 or may be fixed to the inner circumferential surface of the shield pipe 220. The gas supply frame 231 includes a plurality of gas injection holes 232 spaced apart from each other, and receives the first gas from the first gas supply part PG to receive the first gas through the gas injection holes 232. Spray upwards.

In general, since the drive shaft 40 is formed in a circular cross section, the shield pipe 220 is also formed in a hollow circular cross section, and thus the gas supply frame 231 of the gas injector 230 is also formed in a ring shape. The gas injection holes 232 may be disposed in plural with a 15-45 degree interval. The spacing of the gas injection holes 232 is set to a dimension suitable for forming the first gas flow field upward while minimizing the flow variation in the circumferential direction in the interspace S3 ′.

Although the configuration in which the gas injection unit 230 is provided on the upper surface of the coupling plate 42 is illustrated in the drawing, when the injection pressure or the injection flow rate per unit time of the first gas injected from the gas injection hole 232 is sufficiently high, Since the exhaust gas or powder does not flow into the lower side of the supply frame 231, the gas supply frame 231 may be fixed to the shield pipe 220.

The first gas injected from the gas injector 230 is selected to be the same as the process gas used in the process chamber 10c. The first gas is to suppress the inflow of the exhaust gas and the powder 88 in the variable space (S3) surrounded by the bellows 210 can be used a variety of gases, the first gas is introduced into the process chamber (10c) process When reacting with a gas or a substrate, a problem of deterioration of processing quality is caused. Therefore, the first gas is selected as one of the gases used as the process gas (for example, nitrogen and oxygen) or does not react with the process gas. It is preferable that it is selected as a non-gas (for example, an inert gas such as argon).

On the other hand, the interval between the shield pipe 220 and the drive shaft 40 is set to 10mm or less, the diameter of the gas injection port 232 is preferably formed to 1mm to 3mm.

The analysis data shown in FIG. 10A is a graph of the flow cross section under the condition that the gap between the shield pipe 220 and the drive shaft 40 is 18.9 mm without the gas injection unit 230 installed inside the bellows 210. to be. In the graph, the red series indicates upward flow and the blue series indicates downward flow. As shown in FIG. 10A, the second exhaust flow path P2 flows upward on the side where the second exhaust flow path P2 is located, but flows downward on the opposite side to refer to the variable space S3 surrounded by the bellows 210, more precisely the interspace. Vortex is generated in) and it can be confirmed that smooth discharge does not occur.

The analytical data shown in FIG. 10B is a flow cross-sectional graph in a condition in which the gas injection unit 230 is installed inside the bellows 210 but the gap between the shield pipe 220 and the drive shaft 40 is 18.9 mm. Compared to FIG. 10A, the downward flow is reduced in the region not close to the second exhaust passage P2, but the flow direction on the opposite side to the side where the second exhaust passage P2 is located is different from each other, and thus, the shield pipe 220 It can be confirmed that vortices are generated in the interspace S3 'surrounded by the cross section.

Analytical data shown in FIG. 10C is a condition in which the gas injection unit 230 is installed inside the bellows 210 and the gap between the shield pipe 220 and the drive shaft 40 is 10 mm and the size of the gas injection hole is 0.3 mm. Is a flow cross-sectional graph at. Compared to FIG. 10B, all of the areas close to and not close to the second exhaust flow path P2 appear in a green series, and in the interspace S3 ′ surrounded by the shield pipe 220, the flow remains in a stagnant state. It can be confirmed.

The analysis data shown in FIG. 10D is provided under the condition that the gas injection unit 230 is installed inside the bellows 210 and the gap between the shield pipe 220 and the drive shaft 40 is 10 mm and the size of the gas injection hole is 2 mm. Is a flow cross-sectional graph of. Compared to FIGS. 10A to 10C, it can be seen that a gas flow uniformly moving upwards is generated in the space S3 ′ between the shield pipe 220 and the driving shaft 40.

As such, in the variable space S3 surrounded by the bellows 210, the gap between the shield pipe 220 and the drive shaft 40 is maintained at 10 mm or less, and the gas injection unit 230 is installed to blow the first gas upward. By forming the main flow field upward, it became clear that the exhaust gas flows into the variable space S3 from the process chamber 10c and the powder and the like can be reliably suppressed.

Meanwhile, as shown in FIG. 8, the inner exhaust member 110 has a wing portion 111 extending in a radial direction at an upper side thereof, and a cylindrical downward extension portion (11) surrounding a portion of the drive shaft 40 at a central portion thereof. 114 is formed in the shape of a hollow cylinder. The wing 111 of the inner exhaust member 110 is mounted on the flat chamber bottom surface 12s of the lower body 12, and is provided with a space 110c and a drive shaft 40 surrounded by the lower extension 114. A passage extending downwards between the first and second exhaust passages P1 is formed. The 'chamber bottom surface 12s' described in the present specification and claims is not limited to the bottom surface forming the inner wall of the chamber, and when the support plate 16 or the like is installed on the bottom surface forming the inner wall of the chamber, It is defined as including the top surface of an installed structure (eg, support plate).

The outer exhaust member 120 has a circumferential surface in the form of a hollow cylinder to form a partition wall 124, and the fixing plate in a state in which the lower extension 114 of the inner exhaust member 110 is accommodated in the hollow portion 120c. It is mounted on 55. The outer exhaust member 120 has an upper end spaced apart from the wing 111 of the inner exhaust member 110. Here, the height H (ie, the upper end) of the partition wall 124 is formed higher than the upper surface 12u of the second exhaust passage P2 as shown in FIG. 7 to form a U-shaped bypass passage. Accordingly, a bypass passage Pv is formed between the first exhaust passage P1 and the second exhaust passage P2 so that the exhaust gas moves upward to cross the partition 124 and then moves downward again.

As a result, while the exhaust gas flows from the process chamber 10c where the plasma is generated to the outside, the exhaust gas passes through the circumferential direction around the drive shaft 40 while passing through the bypass passage Pv. As it is mixed with the exhaust gas to be guided to a uniform flow in the circumferential direction as a whole, it is possible to reduce the flow amount variation in the circumferential direction around the drive shaft 40 as compared with the case where the bypass passage (Pv) is not formed Can be.

First of all, as shown in Fig. 3, two or more process chambers 10c are arranged side by side and extend toward each other in the horizontal direction from the first exhaust passage P1 extending downward from these process chambers 10c. In the structure in which the exhaust gas is discharged through the second exhaust passage P2 while sharing the second exhaust passage P2, the flow generated in the process of overcoming the partition wall 124 formed in a circular shape around the drive shaft is generated. The resistance serves to buffer and level the suction pressure acting on the second exhaust passage P2. Accordingly, since the exhaust gas discharged from the two different process chambers 10c passes through the U-shaped bypass passage Pv, the emission per unit time of the exhaust gas is uniformly controlled, and thus, during the treatment process in the process chamber. Accurately controlling the amount of exhaust gas emitted ensures a more reliable treatment quality.

On the other hand, a barrier film 121 is formed on the upper side of the partition wall 124 of the outer exhaust member 120 to protrude outward to block the flow of the exhaust gas, and a through hole for allowing the exhaust gas to flow in the blocking film 121. A large number 122 is formed. Here, the blocking film 121 is not to block the flow of the exhaust gas on the bypass passage Pv, but to adjust the flow amount in the circumferential direction around the drive shaft.

In other words, in the region 120E2 proximate to the second exhaust passage P2, the arrangement interval L 'of the through hole 122 is in the region other than the region 120E2 except in proximity to the second exhaust passage P2. It is formed longer than the arrangement interval L of the through holes 122. As a result, the gas flow rate per unit time is suppressed from being increased in the region 120E2 proximate to the second exhaust passage P2 due to the influence of the suction pressure acting on the second exhaust passage P2, and the unit is distributed throughout the circumferential direction. The passage flow rate per hour can be kept uniform.

On the other hand, in the figure is illustrated a configuration for adjusting the flow rate per unit time passing through the bypass passage Pv at the interval of the through hole 122 in the blocking film 121, according to another embodiment of the present invention, the blocking film 121 In the region 120E2 in which the through portion is formed in a slit shape or the like, but adjacent to the second exhaust passage P2, the cross section of the through portion in the region (excluding the region 120E2) in which the cross section of the through portion is not adjacent to the second exhaust passage P2. It may be made by forming smaller than the cross section.

The edge end 121e of the blocking film 121 is provided to abut against the side wall 12a of the chamber body 12, and the outer end member 120 is also mounted by simply mounting the outer exhaust member 120 on the fixing plate 55. It is possible to accurately install the exhaust member 120 at a predetermined position. At this time, the support portion 128 for maintaining a stable upright is formed at the lower end of the partition wall 124 of the outer side exhaust member 120.

By using the inner exhaust member 110 and the outer exhaust member 120 as described above, the '∩' over the partition 124 in the vertical direction between the first exhaust passage (P1) and the second exhaust passage (P2). The flow improvement effect by forming the bypass passage Pv of the type can be confirmed by comparing the flow data of FIGS. 11A and 11B.

As shown in Fig. 11A, in the conventional structure without the bypass passage Pv, the flow distribution in the circumferential direction around the drive shaft 40 shows that the flow pattern of the exhaust gas is not constant and the directions are different so that vortices are generated. Although it can be confirmed, as shown in Fig. 11B, in the structure of the present invention in which the bypass passage Pv that passes over the partition wall 124 is formed, the exhaust gas is discharged from the flow distribution in the circumferential direction around the drive shaft 40. It can be seen that the flow pattern is induced uniformly.

The substrate processing apparatus 100 according to the exemplary embodiment of the present invention configured as described above may blow the first gas upward in a variable space S3 surrounded by the bellows 210 to form an upper flow field 230. In addition to preventing the exhaust gas from flowing into the variable space S3 surrounded by the bellows 210, the exhaust gas or powder flowing into the variable space S3 is promptly discharged through the exhaust passage. As compared with the related art, the effect of improving the exhaust efficiency can be obtained.

At the same time, in the substrate processing apparatus 100 configured as described above, the shield pipe 220 surrounding a part of the drive shaft 40 is installed in the variable space S3, so as to process the process in the process chamber 10c. When the susceptor 30 moves upward for the bellows 210 to be folded, the corrugated pipe of the bellows 210 is not exposed to the exhaust gas by the shield pipe 220, and the inner circumferential surface thereof is smooth in the shield pipe 210. By being blocked by the exhaust gas and the powder is introduced into the inner surface of the bellows 210 to suppress the powder remaining, the powder remaining in the variable space (S3) grows into particles and flows into the process chamber (10c) The conventional problem that has hindered the quality of the treatment process can be completely solved.

In addition, the substrate processing apparatus 100 according to the present invention, when discharging the process gas from the process chamber 10c to the outside, and the first exhaust passage (P1) communicated downward from the process chamber 10c As the bypass shaft Pv is provided between the horizontally extending second exhaust passage P2 through which the suction pressure acts, through the partition wall 124 which induces the flow upward and downward, the driving shaft 40 is provided. The exhaust gas flows from the process chamber 10c even in a structure in which the flow rate per unit time flowing out to the second exhaust passage P2 along the circumferential direction is uniform and the generation of vortices is suppressed so that two or more process chambers are arranged side by side. It is possible to obtain an advantageous effect that can be uniformly discharged.

In the above, the preferred embodiments of the present invention have been described by way of example, but the scope of the present invention is not limited to these specific embodiments, and may be appropriately changed within the scope described in the claims.

** Description of symbols for the main parts of the drawing **
100: substrate processing apparatus 10: chamber body
10c: process chamber 20: shower head
30: susceptor 40: drive shaft
110: inner exhaust member 120: outer exhaust member
122: through part 210: bellows
220: shield pipe 230: gas injection unit
P1: first exhaust passage P2: second exhaust passage
Pv: Bypass

Claims (11)

A chamber body in which a process chamber in which a substrate processing process is performed is formed in an inner space;
A shower head supplying a process gas to the process chamber;
A susceptor disposed in the chamber body to support the substrate;
A drive shaft connected to the susceptor and extending downward and driven to move in an up and down direction to move the susceptor up and down;
An exhaust passage for discharging the process gas in the process chamber to the outside is formed, and is formed to surround a portion of the circumference of the drive shaft to form a first exhaust passage extending downward from the process chamber in a space between the drive shaft. An outer exhaust member configured to be spaced apart from an outer side of the inner exhaust member and to form a bypass passage communicating with the first exhaust passage; An exhaust unit including exhaust gas from the process chamber to be exhausted to the outside air through the second exhaust passage via the bypass passage;
Bellows is formed in the form of a corrugated pipe folded and unfolded in accordance with the vertical movement of the drive shaft to form a variable space in communication with the process chamber to block the outside air;
And the inner exhaust member includes a wing portion that extends over the bottom surface of the process chamber, and a lower extension portion extending downward from the wing portion to form the first exhaust passage. And a partition wall disposed to be spaced apart from the lower extension and extending upward, wherein the partition wall is formed higher than an upper surface of the second exhaust passage.
The method of claim 1,
A barrier film having a through portion for controlling the flow of the exhaust gas is formed extending from the partition wall, wherein the through portion formed in the barrier film has a cross-sectional area in a region close to the second exhaust passage in a region not close to the second exhaust passage. Substrate processing apparatus, characterized in that smaller than the cross-sectional area of.
The method of claim 1,
On the bypass passage, a plurality of blocking films for blocking the exhaust gas and a plurality of through-holes for passing the exhaust gas are formed in the blocking film, and in the region close to the second exhaust passage, the region is not close to the second exhaust passage. Substrate processing apparatus, characterized in that the cross section is larger.
The method of claim 1,
A gas injector configured to inject a first gas from the variable space toward the exhaust passage to form a flow field upward in the variable space;
The substrate processing apparatus further comprised.
The method of claim 4, wherein
A shield pipe housed in the bellows so that at least a portion of the inner portion of the corrugated pipe is not exposed in alignment with the drive shaft;
And the gas injecting unit injects the first gas upward into a space between the shield pipe and the drive shaft.
The method according to any one of claims 1 to 5,
The process chamber consists of two or more;
And the first exhaust passage extends downward from each of the process chambers, and the second exhaust passage communicates with the outside while communicating with the first exhaust passage in a horizontal direction.
A chamber body in which a process chamber in which a substrate processing process is performed is formed in an inner space;
A shower head supplying a process gas to the process chamber;
A susceptor disposed in the chamber body to support the substrate;
A drive shaft connected to the susceptor and extending downward and driven to move in an up and down direction to move the susceptor up and down;
An exhaust unit forming an exhaust passage for discharging the process gas in the process chamber to the outside;
A bellows formed in a corrugated pipe form folded and unfolded as the drive shaft moves up and down to form a variable space in communication with the process chamber to block outside air;
A gas injector configured to inject a first gas from the variable space toward the exhaust passage to form a flow field upward in the variable space;
A shield pipe housed inside the bellows so as not to reveal the inner portion of the corrugated pipe in alignment with the drive shaft during the processing of the substrate;
And the gas injecting unit injects the first gas upward into a space between the shield pipe and the drive shaft.
The method of claim 7, wherein
And the height of the shield pipe is determined by the compression height of the bellows according to the vertical displacement of the drive shaft.
The method of claim 7, wherein
The width of the space between the drive shaft and the shield pipe is 10mm or less, the diameter of the gas injection port is 1mm to 3mm, characterized in that the substrate processing apparatus.
The method according to claim 4 or 7,
And the first gas is selected as a gas which does not react with the process gas.
The method according to any one of claims 7 to 9,
The process chamber consists of two or more;
The exhaust passage includes a first exhaust passage extending downward from each of the process chamber and a second exhaust passage communicating to the outside while communicating the first exhaust passage in a horizontal direction to each other. .


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KR102481410B1 (en) * 2017-07-31 2022-12-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR102480778B1 (en) * 2017-12-27 2022-12-27 주식회사 케이씨텍 Apparatus for Treating Substrate
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