TW202010864A - MOCVD reactor capable of improving the growth quality of the semiconductor material in the center of a wafer - Google Patents
MOCVD reactor capable of improving the growth quality of the semiconductor material in the center of a wafer Download PDFInfo
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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Abstract
Description
本發明涉及MOCVD(金屬有機化學氣相沉積)反應器,還涉及可應用於上述裝置的氣體供應裝置。The present invention relates to a MOCVD (Metal Organic Chemical Vapor Deposition) reactor, and also relates to a gas supply device applicable to the above device.
作為III-V族薄膜中的一種,氮化鎵(GaN)是一種廣泛應用於製造藍光、紫光和白光二極體、紫外線檢測器和高功率微波電晶體的材料。由於GaN在製造適用於大量用途的低能耗裝置(如,LED)中具有實際和潛在的用途,GaN薄膜的生長受到極大的關注。As one of the group III-V thin films, gallium nitride (GaN) is a material widely used in the manufacture of blue, violet, and white diodes, ultraviolet detectors, and high-power microwave transistors. Since GaN has practical and potential uses in manufacturing low-energy-consumption devices (eg, LEDs) suitable for a large number of applications, the growth of GaN thin films has received great attention.
包括GaN薄膜在內的III-V族薄膜能以多種不同的方式生長,包括分子束外延(MBE)法、氫化物蒸氣階段外延(HVPE)法、金屬有機化合物化學氣相沉積(MOCVD)法等。目前,MOCVD法是用於為生產LED得到足夠品質的薄膜的優選的沉積方法。Group III-V films including GaN films can be grown in many different ways, including molecular beam epitaxy (MBE) method, hydride vapor phase epitaxy (HVPE) method, metal organic compound chemical vapor deposition (MOCVD) method, etc. . Currently, the MOCVD method is the preferred deposition method for obtaining thin films of sufficient quality for the production of LEDs.
MOCVD是金屬有機化合物化學氣相沉積(Metal-organic Chemical Vapor Deposition)的英文縮寫。MOCVD製程通常在一個具有溫度控制的環境下的反應室或反應腔內進行。通常,由包含第III-V族元素(例如鎵(Ga))的第一反應氣體和包含氮的第二反應氣體(例如氨(NH3))被通入反應室內反應以在基片上形成GaN薄膜。一載流氣體(carrier gas)也可以被用於協助運輸前體氣體至基片上方。這些前體氣體在被加熱的基片表面混合反應,進而形成第III-V族氮化物薄膜(例如GaN薄膜)而沉積在基片表面。其中第一反應氣體和第二反應氣體在進入反應腔之前需要互相隔離,避免提前反應形成污染物。但是在到達反應腔後又需要快速混合,最終在到達基片時充分反應形成半導體晶體。MOCVD is the abbreviation of Metal-organic Chemical Vapor Deposition. The MOCVD process is usually carried out in a reaction chamber or chamber under a temperature controlled environment. Generally, a first reaction gas containing a group III-V element (such as gallium (Ga)) and a second reaction gas containing nitrogen (such as ammonia (NH3)) are passed into the reaction chamber to react to form a GaN film on the substrate . A carrier gas can also be used to assist in transporting the precursor gas above the substrate. These precursor gases are mixed and reacted on the surface of the heated substrate to form a group III-V nitride film (such as a GaN film) and deposited on the surface of the substrate. The first reaction gas and the second reaction gas need to be isolated from each other before entering the reaction chamber, so as to avoid early reaction to form pollutants. But after reaching the reaction chamber, it needs to be quickly mixed, and finally it will fully react to form a semiconductor crystal when it reaches the substrate.
第一反應氣體和第二反應氣體通常經一氣體噴淋板注入反應室內,如圖1所示為現有技術常用的MOCVD反應器結構,MOCVD反應器包括腔體100,腔體壁中還包括用於流通冷卻液的管道。腔體100圍繞而成的內部空間的內底部設置有一個旋轉軸12,旋轉軸12頂部放置有基片托盤10,基片托盤10上可以放置一片或者多片的待處理基片。基片托盤下方還包括加熱器14和圍繞加熱器14的熱隔離板13。反應器頂部包括一個頂蓋,頂蓋中的下部為一個氣體噴淋板20,氣體噴淋板20內包括第一氣體擴散腔201和第二氣體擴散腔202,這兩個氣體擴散腔201和202分別連接到第一反應氣體源和第二反應氣體源。第一氣體擴散腔201通過多個第一進氣通道211向下輸送第一反應氣體(g1)到下方的反應空間。第二氣體擴散腔202通過多個第二進氣通道212輸送第二反應氣體(g2)到下方反應空間。其中第一進氣通道211和第二進氣通道212經常是呈互相平行的長條形,這樣向下流動過程中能夠與相鄰的另一種反應氣體互相混合。其中氣體噴淋板20的底部還包括一水冷管道25,通過水流帶走氣體噴淋板上多餘熱量,控制氣體噴淋板20穩定在合適溫度。反應腔殼體底部通過真空泵抽氣使反應腔100內保持真空。氣體噴淋板20用於將第一反應氣體g1和第二反應氣體g2注入反應腔100內,第一反應氣體g1和第二反應氣體g2在進入反應腔100前彼此要保持分離,進入反應腔100後開始混合最終到達基片托盤上表面設置的基片,發生充分的反應,從而在基片15表面形成所需的膜層。The first reaction gas and the second reaction gas are usually injected into the reaction chamber through a gas shower plate, as shown in FIG. 1 is the structure of the MOCVD reactor commonly used in the prior art. The MOCVD reactor includes a
上述氣體供應結構中,氣體噴淋板20輸出的第一反應氣體g1和第二反應氣體g2在向下擴散過程中會發生部分混合,但是無法保證到達基片托盤10上表面時能夠按合適的比例充分混合。為此同時需要控制氣體噴淋板20下方旋轉軸12驅動基片托盤10保持高速旋轉(600-1200轉/分),這樣到達基片托盤10上表面的不同種類反應氣體在高速旋轉的基片托盤上表面的驅動下達到充分混合。但是這種高速旋轉保證混合的方式存在缺陷,基片托盤10中心區域相對托盤邊緣區域旋轉的線速度很低,無法足夠混合。如圖2所示為基片托盤10的頂視圖,其中基片托盤10上設置有大量基片15,其中位於中心區域10A區域的基片由於氣體混合不充分,所以會出現反應不充分或者其中一種反應氣體過量的問題,其餘的10B區域由於基片托盤的高速旋轉能夠實現快速沉積。上述基片托盤中心區域半導體生長不均勻的問題是現有技術無法有效解決的,所以一般基片托盤中心區域不設置基片。In the above gas supply structure, the first reaction gas g1 and the second reaction gas g2 output by the
另一方面,反應腔內底部外側包括抽氣口,聯通到真空泵,使得反應腔內在反應過程中維持在接近真空的低壓。所以從上方向下流的第一、第二反應氣體g1和g2會向外側邊緣流動,所以流到基片托盤10中心區域10A的氣流量小於10B區域的流量,這一差異也會導致中心區域的生長效果不佳,無法生長有效的半導體結構。On the other hand, the outside of the bottom of the reaction chamber includes a suction port, which is connected to the vacuum pump, so that the reaction chamber is maintained at a low pressure close to vacuum during the reaction. Therefore, the first and second reaction gases g1 and g2 flowing downward from above will flow to the outer edge, so the gas flow to the
所以,需要提出一種新的技術進一步減小托盤中心區域中出現的無效生長區域。另一方面,目前部分製程(用於生產GaN功率元件)中一片托盤上只設置一整片基片,這種應用場合下基片中心出現大片品質無法滿足要求的區域也會嚴重影響生產效率。Therefore, a new technique needs to be proposed to further reduce the ineffective growth area in the center area of the tray. On the other hand, in some current processes (used to produce GaN power devices), only a whole substrate is set on a tray. In this application, a large area in the center of the substrate that cannot meet the requirements will also seriously affect production efficiency.
本發明提供一種MOCVD反應器,使得MOCVD反應器內基片托盤中心區域的反應與周圍區域的氣體流量和混合比更接近,大幅提高基片中心區域半導體材料的生長品質。The present invention provides a MOCVD reactor, so that the reaction in the central area of the substrate tray in the MOCVD reactor is closer to the gas flow rate and mixing ratio in the surrounding area, which greatly improves the growth quality of the semiconductor material in the central area of the substrate.
本發明的MOCVD反應器包括:反應腔體,該反應腔體圍繞形成反應空間;反應空間底部包括一個旋轉基座,用於支撐並驅動設置在旋轉基座上的基片托盤旋轉,該基片托盤用於固定一片或多片待處理基片;反應腔體頂部包括一頂蓋,頂蓋下部包括一進氣裝置,該進氣裝置包括一個氣體噴淋板,用於向下通入第一反應氣體和第二反應氣體;該進氣裝置還包括一個長桿形的氣體噴頭,該氣體噴頭穿過位於氣體噴淋板中心的通孔向下延伸到低於氣體噴淋板下表面,氣體噴頭頂部包括一輔助氣體輸入管道,通過輔助氣體輸入管道與第一反應氣源或者第二反應氣源之一相連接,氣體噴頭底部為氣體噴嘴,氣體噴嘴底面的多個出氣通道向下方的基片托盤中心區域噴出來自輔助氣體輸入管道的氣體。其中氣體噴頭內的輔助氣體輸入管道也可與抽氣裝置相聯通,以抽走噴頭周圍多餘反應氣體。The MOCVD reactor of the present invention includes: a reaction chamber surrounding the reaction chamber to form a reaction space; a bottom of the reaction space includes a rotating base for supporting and driving a substrate tray provided on the rotating base to rotate, the substrate The tray is used to fix one or more substrates to be processed; the top of the reaction chamber includes a top cover, and the lower part of the top cover includes an air inlet device, and the air inlet device includes a gas shower plate for downward passage into the first The reaction gas and the second reaction gas; the gas inlet device also includes a long rod-shaped gas shower head, the gas shower head extends through the through hole located in the center of the gas shower plate downwards below the lower surface of the gas shower plate, gas The top of the nozzle includes an auxiliary gas input pipe, which is connected to one of the first reaction gas source or the second reaction gas source through the auxiliary gas input pipe. The bottom of the gas nozzle is a gas nozzle. The center area of the film tray ejects gas from the auxiliary gas input pipe. The auxiliary gas input pipe in the gas nozzle can also be connected with the gas extraction device to pump excess reaction gas around the nozzle.
其中噴頭上端通過一個氣密裝置與頂蓋連接,氣密裝置為磁流體密封裝置,實現高速旋轉的氣體噴頭與固定安裝的頂蓋之間的氣密。The upper end of the spray head is connected to the top cover through an airtight device. The airtight device is a magnetic fluid sealing device, which realizes airtightness between the high-speed rotating gas spray head and the fixedly installed top cover.
MOCVD反應器還包括一驅動裝置,以驅動氣體噴頭能夠上下移動或者旋轉。The MOCVD reactor also includes a driving device to drive the gas shower head to move up and down or rotate.
本發明的MOCVD反應器用於生長多層材料層,其中用於生長不同材料層時氣體噴嘴具有不同高度。The MOCVD reactor of the present invention is used to grow multiple material layers, wherein the gas nozzles have different heights when used to grow different material layers.
本發明的氣體噴頭旋轉方向與基片托盤旋轉方向可以選擇不同或相同,旋轉速度也可以選擇與基片托盤的轉速相同,使得補充入反應腔的反應氣體能夠與氣體噴淋板在基片托盤上中心區域的氣流分佈互相補償,改善生長品質。The rotation direction of the gas shower head and the rotation direction of the substrate tray of the present invention can be selected to be different or the same, and the rotation speed can also be selected to be the same as the rotation speed of the substrate tray, so that the reaction gas supplemented into the reaction chamber can be connected with the gas shower plate on the substrate tray The air distribution in the upper center area compensates each other to improve growth quality.
本發明中的氣體噴嘴包括多組互相隔離的出氣通道,第一組出氣通道的氣體聯通到第一反應氣體源,第二組出氣通道聯通到第二反應氣體源,第一組出氣通道和第二組出氣通道輸出的氣體流向基片托盤中心區域內的第一區域和第二區域。第一區域內第一氣體通道的噴出的氣體方向與基片托盤平面垂直,第二區域內第二氣體通道噴出的氣體方向與基片托盤平面互相平行或者傾斜相交。The gas nozzle in the present invention includes a plurality of groups of isolated gas outlet channels. The gas of the first group of gas outlet channels is connected to the first reactive gas source, the second group of gas outlet channels is connected to the second reactant gas source, and the first group of gas outlet channels and the first The gas output from the two groups of gas outlet channels flows to the first area and the second area in the central area of the substrate tray. The direction of the gas ejected from the first gas channel in the first area is perpendicular to the plane of the substrate tray, and the direction of the gas ejected from the second gas channel in the second area is parallel to or obliquely intersects the plane of the substrate tray.
本發明所適用的氣體噴淋板底部包括多個互相平行的縱長形氣體通道,第一組的氣體通道與第一反應氣源相聯通用於通入第一反應氣體,第二組氣體通道與第二反應氣源相聯通用於通入第二反應氣體,其中第一組和第二組氣體通道交替排布。The bottom of the gas shower plate applicable to the present invention includes a plurality of longitudinal gas channels parallel to each other, the first group of gas channels communicates with the first reaction gas source for passing in the first reaction gas, and the second group of gas channels The second reaction gas source is connected to the second reaction gas, wherein the first group and the second group of gas channels are alternately arranged.
氣體噴嘴側壁包括多個出氣通道,側壁的出氣通道使得噴出的第一或第二反應氣體傾斜向下流向基片托盤。The side wall of the gas nozzle includes a plurality of air outlet channels, and the air outlet channels of the side wall cause the sprayed first or second reaction gas to flow downward to the substrate tray obliquely.
氣體噴頭內還包括冷卻液通道,冷卻液通道用以與反應腔外部的冷卻液源聯通以控制氣體噴頭的溫度。冷卻液通道內還包括一隔離管道,冷卻液經過隔離管道內部流入冷卻液通道,經過隔離管道外壁與冷卻液通道內壁之間的空間流出冷卻液通道。進一步地,氣體噴頭內包括多組圍繞冷卻液通道排布的供氣管道,其中第一組供氣管道聯通到第一反應氣體源,第二組氣體管道聯通到第二反應氣體源。其中第一組供氣管道與第二組供氣管道交替排布,且第一組供氣管道位於第二組供氣管道的周邊。或者氣體噴頭內還包括第一氣體擴散環和第二氣體擴散環用於向氣體噴頭下方或者外周方向輸出反應氣體,第一氣體擴散環與第一組供氣管道聯通,第二氣體擴散環與第二組供氣管道聯通,且第一氣體擴散環位於第二氣體擴散環上方。The gas spray head further includes a cooling liquid channel, and the cooling liquid channel is used to communicate with the cooling liquid source outside the reaction chamber to control the temperature of the gas spray head. The cooling liquid channel further includes an isolation pipe. The cooling liquid flows into the cooling liquid passage through the interior of the isolation pipe, and flows out of the cooling liquid passage through the space between the outer wall of the isolation pipe and the inner wall of the cooling liquid passage. Further, the gas shower head includes a plurality of groups of gas supply pipes arranged around the cooling liquid channel, wherein the first group of gas supply pipes are connected to the first reaction gas source, and the second group of gas pipes are connected to the second reaction gas source. The first group of gas supply pipes and the second group of gas supply pipes are alternately arranged, and the first group of gas supply pipes are located around the second group of gas supply pipes. Or the gas nozzle further includes a first gas diffusion ring and a second gas diffusion ring for outputting the reaction gas below or around the gas nozzle. The first gas diffusion ring communicates with the first group of gas supply pipes, and the second gas diffusion ring is The second group of gas supply pipes are connected, and the first gas diffusion ring is located above the second gas diffusion ring.
下文將結合所附圖式對本發明的技術方案進行詳細描述,需強調的是,這裡僅是示例性的闡述,不排除有其它利用本發明思想的實施方式。The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be emphasized that this is only an exemplary explanation, and other embodiments that utilize the ideas of the present invention are not excluded.
如圖3所示,本發明進氣裝置除了氣體噴淋板20外,還包括一個長桿形氣體噴頭23,氣體噴頭23垂直穿過氣體噴淋板20的中心區域並向下延伸至氣體噴淋板20的下表面下方。氣體噴頭23的一端連接到反應氣體供應源,另一端包括了設置有多個出氣通道的氣體噴嘴23a,氣體噴嘴23a的多個出氣通道面向下方基片托盤中心區域噴射反應氣體。氣體噴頭23還連接有冷卻液管道,冷卻液管道與外部的冷卻液源26相連接,以控制氣體噴頭23維持在一個合理的溫度,防止氣體噴頭變形或者反應氣體在氣體噴頭內部提前分解。As shown in FIG. 3, in addition to the
在GaN材料層生長過程中,需要在氧化鋁或者單晶矽的基底上逐漸沉積多層緩衝層、量子井等各種結構層,每個不同材料層需要各自不同的氣體成分和流量,所以需要經過多個沉積、生長步驟才能最終獲得所需要的氮化鎵層,每個步驟中通過調節多個參數(溫度、反應氣體成分、流量)可以使得基片托盤上周邊區域10B內能夠生產出具有合格品質的材料層。本發明由於在MOCVD反應器中設置了一個輔助供應反應氣體的噴頭23,可以在每個步驟中通入當前步驟中,中心反應區域(即基片托盤中心區域10A)對應上方的反應空間所缺乏的反應氣體。噴頭23的上端需要設置至少一個可切換閥門,使得噴頭可以根據需求選擇性的連接到上述第一、第二反應氣源或者額外的其它氣體(如載氣N2/H2)。只要能使得基片托盤10上方中心反應區域10A的反應速度或者氣體成分比例與區域10B接近就能大幅提高中心區域形成的材料層的品質,最終可以顯著提高MOCVD反應器的生產效率。During the growth of the GaN material layer, it is necessary to gradually deposit various structural layers such as multiple buffer layers and quantum wells on the substrate of aluminum oxide or single crystal silicon. Each different material layer requires its own different gas composition and flow rate, so it needs to go through Only the deposition and growth steps can finally obtain the required gallium nitride layer. In each step, by adjusting multiple parameters (temperature, reaction gas composition, flow rate), the surrounding
本發明中氣體噴頭可以在不同處理步驟中上下移動,這樣氣體噴嘴23a的高度也可以在不同高度變化,使得噴出的氣體具有不同的分佈,以適應不同製程步驟的特殊需求。通過上下移動的氣體噴嘴23a可以進一步改善基片托盤中心區域的生長品質,使得基片托盤上方不同區域的基片具有更均一的處理效果。為了保證可以移動的氣體噴頭23在處理過程中保持與氣體噴淋板之間的氣密,在氣體噴淋板20的上方還需要設置一個磁流體的密封結構24。其中製程過程中氣體噴嘴23a的位置越高,則向下流出的反應氣體到達基片的距離越長,氣體的擴散範圍越大,對下方基片托盤中心區域的氣體分佈的影響程度較弱,可以小幅度改變中心區域的氣體成分和流量比例。適合在中心區域10A與周圍區域10B具有較小的生長效果差距的製程步驟中應用,實現微量補償。氣體噴嘴23a的位置越低,則越靠近下方基片托盤10,對基片托盤中心區域的氣體成分和流量改變幅度越大,適合在中心區域10A與周圍區域10B具有很大的生長效果差距的製程步驟中應用。In the present invention, the gas spray head can move up and down in different processing steps, so that the height of the
本發明中氣體噴頭23還可以進行旋轉動作,其中旋轉的方向和速度可以根據需要選擇。比如氣體噴頭可以與下方基片托盤的旋轉方向相反,這樣下方基片托盤旋轉時的速度再加上氣體噴頭23的旋轉速度疊加,可以使得流出氣體噴頭23的補充反應氣體與基片托盤上表面的基片具有更高的相對速度,有利於噴頭23流出的補充反應氣體與氣體噴淋板20流出的反應氣體快速互相混合,最終使得補充反應氣體與原有反應氣體的混合物不僅氣流量和成分與周圍10B相同,而且混合充分。In the present invention, the
圖4示出為圖3中Z處向上看到的氣體噴淋板20和氣體噴頭23的仰視圖,當基片托盤旋轉時,基片托盤中心區域旋轉的線速度較邊緣區域旋轉的線速度低,由於本發明的第一進氣通道211和第二進氣通道212為交替設置的平行長條狀,在基片托盤中心區域10A對應上方的中心反應空間中存在兩個氣體混合度特別差的區域1011、1012,這兩個區域對應下方的空間中反應氣體無法很好的混合。由於氣體噴淋板20底面排布的進氣通道211和212是互相平行的長條形的,當下方基片托盤10旋轉時,中心反應區域中的部分氣體供應管道是垂直於下方的旋轉方向的,所以兩種反應氣體能夠在基片托盤上很好的混合,但是對應區域1011和1012來說,進氣通道211、212內的氣體流出通道接近與基片托盤10旋轉方向平行,這就會導致區域1011中的第一進氣通道211內的氣體,只會與來自自身進氣通道211的反應氣體產生位移,但不能快速的與相鄰的進氣通道212噴出的氣體混合。所以在氣體噴淋板對應區域1011和1012內的氣體混合度極差,要麼是第一反應氣體g1過多,要麼是第二反應氣體g2過多,無法有效的生長材料層。4 is a bottom view of the
本發明由於氣體噴頭23可以旋轉,可以選擇性的控制通過氣體噴頭23輸出的反應氣體到特定的基片托盤區域如1011、1012。比如氣體噴頭23與基片托盤10同步旋轉,氣體噴頭23底部的氣體噴嘴23a底面的通氣孔中對應1011和1012區域流出的反應氣體中第一反應氣體g1或者第二反應氣體g2佔據多數,這樣正好與氣體噴淋板20產生的初始氣體分佈互相補償,最終實現基片托盤中心區域氣體的良好混合。更進一步的,氣體噴嘴23a可以在底面或者底面和側壁設置不同的出氣通道,這些出氣通道流出的反應氣體分別具有不同的朝向,分別補償區域1011、1012中每一個反應氣體混合不均的區域。因此本發明中的氣體噴頭23通過選擇不同的旋轉速度、旋轉方向和氣體噴嘴23a出氣通道朝向的設計可以實現基片托盤中心區域10A反應氣體的有效混合,使得中心區域不再是無效的生長區域,能夠極大的提高生產效率。本發明的氣體噴頭23能夠與下方的基片托盤10同步旋轉,所以除了能夠改善補償區域的1011、1012的氣體混合比例,還能改善中心區域10A內任何位置出現的氣體流量分佈不均的狀況。只要在生產製程中發現局部混合不均,就可以通過選擇設計噴嘴通孔的形狀和位置,使得氣體噴嘴向該發生混合不均問題的區域定向噴射補償氣體,最終使得整個基片上都能達到均勻的處理效果。In the present invention, since the
本發明的氣體噴頭23除了可以是向中心區域補充流入特定反應氣體,使得中心區域的反應氣體達到充分混合,也可以是向外抽氣的,比如對於1011區域中第一反應氣體g1過多的區域,可以選擇抽走部分多餘的反應氣體,在抽走多餘第一反應氣體g1的同時,周圍的第二反應氣體g2可以在氣壓差的推動下更多的流向該區域,最終也能改善反應氣體混合度不均。The
本發明中氣體噴頭23通入MOCVD反應器或者抽出MOCVD反應器的反應氣體主要是補償中心區域10A氣流分佈不均的問題,所以所需要的氣流量極小,通常經過氣體噴頭23的氣體流量小於經過氣體噴淋板20的流量的1/15,不會對周圍區域10B的氣流分佈產生干擾,所以能夠在保持整體生長效果的同時,大幅改善中心區域的材料層生長品質。In the present invention, the reaction gas from the
如圖5a所示為本發明氣體噴嘴23a的立體圖,其中氣體噴嘴23a的底部包括多個沿圓周排布的弧形出氣通道,也包括氣體噴嘴23a側壁設置的多個長條形出氣通道。As shown in FIG. 5a, a perspective view of the
如圖5b是本發明氣體噴嘴另一個實施例的立體示意圖,其中氣體噴嘴23a’底部包括多個均勻分佈的圓形出氣通道,氣體噴嘴23a’的側壁也設置有大量圓形出氣通道。Fig. 5b is a schematic perspective view of another embodiment of the gas nozzle of the present invention, wherein the bottom of the
圖6所示為本發明中圖5a或者5b中流出的反應氣體的流向示意圖,其中氣體噴嘴23a底面的出氣通道流出的氣體都向下流動到噴頭下方的區域,側壁下端的出氣通道傾斜向下流到噴頭周圍的區域,側壁上端的氣孔水平向外側流出擴散到較遠的周邊區域,或者側壁上氣流流出方向反向排布。上述通孔開口的設置可以根據需要自行選擇,使得不同位置的通孔分別對應噴射反應氣體到基片托盤不同區域,而且這些對應不同區域的通孔可以噴出相同或不同成分的反應氣體。6 is a schematic diagram of the flow direction of the reaction gas flowing out of FIG. 5a or 5b in the present invention, in which the gas flowing out of the gas outlet channel at the bottom of the
如圖7a所示噴嘴23a內部結構圖,其中噴嘴包括位於中心的冷卻液通道,冷卻液通道由噴嘴23a內部的內壁32圍繞而成,內壁32內部的冷卻液通道作為冷卻液流通管道。其中冷卻液流通管道內還包括分隔管道34,分隔管圍繞而成的內部通道236a中,冷卻液流入。分隔管道34外壁與內壁32之間的外部通道236b作為冷卻液流出管道。內壁32和噴嘴外側壁之間包括多個供氣管道231、233、235向下延伸,直到位於噴嘴底部的多個擴散腔,擴散腔由噴嘴23a的內壁32、側壁和底壁圍繞而成,通常擴散腔內的氣流流動截面積大於上方供氣管道231、233的截面積,這樣的結構可以使得氣流更好的擴散,均勻的從位於的噴嘴外側壁和底部的多個出氣通道噴出。圖7b是圖7a所示噴嘴結構圖中X處的橫截面示意圖,圖中可見供氣管道231、233、235分別向下通入A、B、C三種反應氣體,其中A和B為第一和第二反應氣體,比如TMG和氨氣;C為隔離氣體,不參與反應但能夠調節氣流中有效氣體的濃度。三種調節氣體可以同時通過氣體噴頭23同時噴入反應腔內空間,也可以只經過其中一個或兩個供氣管道輸送兩種調節氣體。As shown in FIG. 7a, the internal structure diagram of the
圖8a所示,為另一個實施例的噴嘴23a內部結構圖,其中噴嘴包括位於中心的冷卻液通道,冷卻液通道由噴嘴23a內部的內壁32’圍繞而成,內壁還包括分隔管道34’,將冷卻液管道進一步分隔為冷卻液流入管道236a’和冷卻液流出管道236b’。噴嘴內圍繞冷卻液管道中還設置有多個上下延伸的供氣管道239、237,其中多個供氣管道237靠近並圍繞所述內壁32’均勻排布,用於向下通入反應氣體B;多個供氣管道239位於供氣管道237周邊,圍繞供氣管道237均勻排布,用於向下通入反應氣體A。其中供氣管道237向下延伸到氣體噴嘴底部,與氣體擴散環236聯通,氣體擴散環236上設置有多個向下方和向外側壁噴出反應氣體B的出氣通道。供氣管道239向下延伸與氣體擴散環238互相聯通,氣體擴散環238上設置有多個向外側壁噴出反應氣體A的出氣通道。其中氣體擴散環238位於氣體擴散環236上方,反應氣體A可以是TMG氣體,反應氣體B為氨氣,氣體擴散環236位於更下方,所以接受下方輻射的熱量更大,溫度會高於上方氣體擴散環238的溫度,通過高度不同可以使得更容易熱分解的反應氣體TMG不易在氣體供應管道和氣體擴散環中提前分解並形成污染物。如圖8b為圖8a所示噴嘴23a中Y處的橫截面圖,可以看到第一、第二供氣管道的水平方向的是呈內外圈均勻排布的。FIG. 8a shows an internal structure diagram of a
本發明通過在頂部氣體噴淋板中心位置額外添加一個進氣的氣體噴頭,從噴頭底部的噴嘴向下通入少量的補償反應氣體,或者抽出過量反應氣體使得中心區域的氣體能夠與周圍區域一樣均勻。噴頭可以上下運動以適應不同處理步驟中不同的補償需要。而且噴頭可以被外部驅動器驅動旋轉,通過對旋轉方向和旋轉速度的選擇可以使得補充入基片托盤中心的反應氣體與下方原有反應氣體互相補償,得到最佳的反應氣體混合度,使得基片托盤中心區域材料層的品質大幅改善。In the present invention, by adding an additional gas injection head at the center of the top gas shower plate, a small amount of compensation reaction gas is passed downward from the nozzle at the bottom of the head, or excess reaction gas is drawn out so that the gas in the central area can be the same as the surrounding area Evenly. The spray head can move up and down to adapt to different compensation needs in different processing steps. In addition, the nozzle can be driven and rotated by an external drive. By selecting the rotation direction and rotation speed, the reaction gas supplemented into the center of the substrate tray and the original reaction gas below can compensate each other to obtain the optimal reaction gas mixing degree, so that the substrate The quality of the material layer in the center area of the tray is greatly improved.
本發明的氣體噴頭特別適用於如圖4所示的實施例,第一進氣通道211和第二進氣通道212在氣體噴淋板底部成縱長形排布,每個第一反應氣體進氣通道211、第二反應氣體進氣通道212 均交替排布,這種互相平行的進氣通道在基片托盤中心區域的局部位置(1011、1012)會出現明顯的氣流混合度不佳,而且無法通過上方氣體噴淋板的氣流調整來解決。透過本發明設置的氣體噴頭,透過通入少量補償反應氣體能很好的解決這一問題。根據上述發明原理,本發明中第一、第二反應氣體進氣通道也可以是其它的結構,比如是排成一列的多個進氣通孔,不限於長條形的進氣槽。或者在第一、第二反應氣體進氣通道(211、212)之外設置一列第三氣體進氣通道,位於第一、第二反應氣體進氣通道之間,提供隔離作用,以防止第一、第二反應氣體流出氣體噴淋板20下表面後過早混合發生反應。The gas shower head of the present invention is particularly suitable for the embodiment shown in FIG. 4. The first
儘管本發明的內容已經通過上述優選實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After those skilled in the art read the above, various modifications and substitutions to the present invention will be apparent. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.
10:基片托盤
10A:中心區域
10B:周邊區域
12:旋轉軸
13:熱隔離板
14:加熱器
20:氣體噴淋板
23:氣體噴頭
23a、23a’:氣體噴嘴
24:磁流體的密封結構
25:水冷管道
26:冷卻液源
32、32’:內壁
34、34’:分隔管道
100:腔體
201:第一氣體擴散腔
202:第二氣體擴散腔
211:第一進氣通道
212:第二進氣通道
231、233、235:供氣管道
236、238:氣體擴散環
236a:內部通道
236b:外部通道
236a’:冷卻液流入管道
236b’:冷卻液流出管道
239、237:供氣管道
1011、1012:基片托盤區域
A、B、C:反應氣體
g1:第一反應氣體
g2:第二反應氣體10:
圖1是現有技術MOCVD反應器結構示意圖;Figure 1 is a schematic diagram of the structure of a prior art MOCVD reactor;
圖2 是現有技術中基片托盤的頂視圖;2 is a top view of the substrate tray in the prior art;
圖3是本發明一個MOCVD反應器的結構示意圖;3 is a schematic structural view of a MOCVD reactor of the present invention;
圖4是圖3中MOCVD反應器中Z處向上的氣體噴淋板和氣體噴頭的仰視圖;4 is a bottom view of the gas shower plate and the gas shower head at the Z position in the MOCVD reactor in FIG. 3;
圖5a、圖5b是本發明氣體噴頭中的噴嘴結構示意圖;5a and 5b are schematic structural diagrams of nozzles in the gas shower head of the present invention;
圖6是圖5所示噴嘴實施例的氣流方向示意圖;6 is a schematic diagram of the airflow direction of the nozzle embodiment shown in FIG. 5;
圖7a是本發明氣體噴嘴一實施例的垂直剖面示意圖;7a is a schematic vertical sectional view of an embodiment of the gas nozzle of the present invention;
圖7b是圖7a的氣體噴嘴中X處的水平剖面示意圖;7b is a schematic horizontal cross-sectional view at X of the gas nozzle of FIG. 7a;
圖8a是本發明氣體噴嘴另一實施例的垂直剖面示意圖;8a is a schematic vertical sectional view of another embodiment of the gas nozzle of the present invention;
圖8b是圖8a的氣體噴嘴中Y處的水平剖面示意圖。8b is a schematic horizontal cross-sectional view at position Y in the gas nozzle of FIG. 8a.
10:基片托盤 10: substrate tray
10A:中心區域 10A: Central area
10B:周邊區域 10B: surrounding area
20:氣體噴淋板 20: Gas spray plate
23:氣體噴頭 23: gas nozzle
23a:氣體噴嘴 23a: gas nozzle
24:磁流體的密封結構 24: Sealing structure of magnetic fluid
25:水冷管道 25: Water cooling pipe
26:冷卻液源 26: Coolant source
100:腔體 100: cavity
201:第一氣體擴散腔 201: First gas diffusion chamber
202:第二氣體擴散腔 202: second gas diffusion chamber
211:第一進氣通道 211: The first intake passage
212:第二進氣通道 212: Second intake passage
Claims (18)
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CN201811075955.8A CN110904432B (en) | 2018-09-14 | 2018-09-14 | MOCVD reactor |
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TWI791100B TWI791100B (en) | 2023-02-01 |
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CN112695302B (en) * | 2019-10-22 | 2023-05-30 | 中微半导体设备(上海)股份有限公司 | MOCVD reactor |
CN114075660B (en) * | 2020-08-14 | 2022-09-27 | 长鑫存储技术有限公司 | Spray header, chemical vapor deposition equipment and working method thereof |
CN114351117B (en) * | 2020-10-13 | 2022-12-20 | 东部超导科技(苏州)有限公司 | Spray plate, MOCVD reaction system with spray plate and use method of MOCVD reaction system |
CN114855267B (en) * | 2022-07-05 | 2022-10-11 | 苏州长光华芯光电技术股份有限公司 | Wafer epitaxial growth system and wafer epitaxial growth method |
CN115537765B (en) * | 2022-09-27 | 2024-07-12 | 盛吉盛(宁波)半导体科技有限公司 | Plasma chemical vapor deposition device and small-size groove filling method |
CN115747960A (en) * | 2022-11-20 | 2023-03-07 | 上海良薇机电工程有限公司 | Gas mixing buffer device and semiconductor process system |
CN117089924B (en) * | 2023-10-17 | 2023-12-19 | 凯德芯贝(沈阳)石英有限公司 | Quartz nozzle for semiconductor vapor phase epitaxy and preparation and use methods thereof |
CN117265504B (en) * | 2023-11-20 | 2024-02-02 | 江西力信达高新装备有限公司 | Device for uniformly feeding air into fluidized bed type vapor deposition furnace |
CN117385341B (en) * | 2023-12-12 | 2024-02-09 | 南昌中微半导体设备有限公司 | Chemical vapor deposition equipment and gas spray header thereof |
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