KR20150077107A

KR20150077107A - Chemical Vapor Deposition

Info

Publication number: KR20150077107A
Application number: KR1020130166000A
Authority: KR
Inventors: 홍성재
Original assignee: 엘아이지인베니아 주식회사
Priority date: 2013-12-27
Filing date: 2013-12-27
Publication date: 2015-07-07

Abstract

The present invention relates to a chemical vapor deposition apparatus, which comprises a process chamber, a susceptor for supporting a wafer inside the process chamber, a first process gas and a second process gas which are provided above the susceptor, And a jetting unit disposed in the center of the showerhead for jetting the inert gas radially from the inside toward the outside with respect to the center of the showerhead. to provide.
According to an embodiment of the present invention, a separate injection part is provided below the center of the shower head to uniformly distribute the process gas in the process chamber, thereby achieving uniform deposition of the thin film.

Description

[0001] Chemical Vapor Deposition [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus, and more particularly, to a chemical vapor deposition apparatus capable of depositing a uniform thin film by controlling a flow rate while injecting gas injected in a process chamber in a horizontal direction.

Chemical vapor deposition refers to a process of forming a thin film on a substrate using a chemical reaction of the process gas. Accordingly, the chemical vapor deposition apparatus supplies at least one process gas having good reactivity into the chamber, and activates the process gas using light, heat, plasma, microwave, X-ray, electric field, To form a high-quality thin film on the substrate.

A chemical vapor deposition apparatus for performing such a process is a device for manufacturing semiconductor devices and light emitting devices such as OLEDs and LEDs. Specifically, the chemical vapor deposition is performed by sequentially laminating a buffer layer made of GaN crystal, an n-type doping layer made of n-type GaN crystal, and a p-type doping layer made of InGaN by using a nitride material on a substrate or wafer such as sapphire Emitting device.

Such chemical vapor deposition apparatuses include CVD (Chemical Vapor Deposition) and MOCVD (Metalorganic Chemical Vapor Deposition), in which a process gas is sprayed onto a substrate accommodated in the substrate to react the substrate with the process gas, .

Conventionally, there has been a problem in that a uniform thin film deposition can not be performed because the distribution of the process gas inside the chamber injected from the shower head is concentrated to the outside due to the influence of the exhaust pump in the lower part of the chamber.

Korean Registered Patent Publication (Registration No.: 10-0497748)

In order to solve the above-described problems, the present invention has a separate injection part below the center of the showerhead to uniformly distribute the process gas in the process chamber to achieve uniform deposition of the thin film.

The present invention relates to a process chamber, comprising a process chamber, a susceptor for supporting a wafer inside the process chamber, a first supply pipe for supplying a first process gas and a second process gas into the process chamber, And a spraying portion disposed at the center of the showerhead, for spraying the inert gas radially from the inside toward the outside with respect to the center of the showerhead.

The injection unit may include a gas pipe passing through the center of the showerhead and connected to an external supply line, and an injector located below the shower head and injecting the gas supplied from the gas pipe into the process chamber.

In addition, the injector may further include a plurality of ejection openings along a cylindrical outer circumferential surface.

The injection unit may further include a controller for controlling the horizontal velocity of the inert gas injected from the jetting unit so as to control the uniformity of the thin film deposited on the wafer surface.

In addition, the gas pipe penetrates the center of the showerhead, and can function to prevent sagging of the lower part due to the fastening structure with the upper part or the lower part of the shower head.

The first process gas and the second process gas supplied from the first supply pipe and the second supply pipe may be arranged to be injected in the direction of the susceptor.

In addition, the amount of the gas to be injected can be selectively controlled by the first process gas injected from the first supply pipe, the second process gas injected from the second supply pipe, and the inert gas injected from the injection part.

A plasma processing apparatus comprising: a process chamber; a susceptor for supporting a wafer in the process chamber; a first supply pipe provided above the susceptor for supplying a first process gas into the process chamber; And a spraying unit for spraying the process gas in a horizontal direction from the inside to the outside with respect to the center of the showerhead.

The injector may include a gas pipe passing through the center of the showerhead and connected to an external supply line and an injector disposed below the showerhead and injecting the second process gas supplied from the gas pipe into the process chamber have.

The injector may have a control unit for controlling the horizontal velocity of the gas injected from the jetting unit so as to control the uniformity of the thin film deposited on the wafer surface.

Further, a cooling chamber may be provided under the shower head and between the first supply pipe and the second supply pipe to cool the first process gas and the second process gas supplied into the process chamber.

The connection portion of the gas pipe and the injection port may have a curved shape so that the inert gas supplied to the gas pipe or the second process gas can smoothly pass through the injection port.

In addition, the injector may include a diffuser portion that forms a space for supplying inert gas or a second process gas supplied to the gas pipe to the process chamber when the process gas is supplied into the process chamber.

The details of other embodiments are included in the detailed description and drawings.

According to the present invention, the shower head has a separate spray part under the center of the shower head to uniformly distribute the process gas in the process chamber, thereby achieving uniform deposition of the thin film.

In addition, each process gas or inert gas is cross-jetted in different directions to control the wafer surface velocity.

In addition, there is an effect that a tube can be installed inside the shower head to prevent sagging under the shower head.

1 is a cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of a shower head and an injection part of a chemical vapor deposition apparatus according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a showerhead and a spraying unit of a chemical vapor deposition apparatus according to another embodiment of the present invention.
FIG. 4 is an exploded perspective view of a showerhead and an injection unit according to another embodiment of the present invention. FIG.

Hereinafter, a chemical vapor deposition apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In this embodiment, a description will be given of a chemical vapor deposition process using a process gas containing an organic metal compound (Metal Organic Chemical Vapor Deposition). However, the present invention is not limited thereto and can be applied to a chemical vapor deposition process apparatus using various process gases.

A chemical vapor deposition apparatus includes a process chamber, a susceptor for supporting the wafer inside the process chamber, a showerhead disposed above the susceptor, for spraying the first process gas toward the susceptor into the process chamber, And a jetting unit for jetting the second process gas in a horizontal direction from the inside to the outside with respect to the center of the showerhead.

The showerhead or jetting portion described above may be a first supply pipe or a second supply pipe, and the process gas supplied to each showerhead or jetting portion may be a first process gas, a second process gas, or an inert gas.

1 is a cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present invention.

1, a chemical vapor deposition apparatus 10 includes a process chamber 100, a susceptor 400 for supporting a wafer S in the process chamber 10, A showerhead 200 for spraying a first process gas G1 into the process chamber 100 and a shower head 200 disposed at the lower and central portions of the showerhead 200, And a jetting part 300 which is horizontally injected toward the outside.

The process chamber 100 forms the body of the chemical vapor deposition apparatus 10 and provides a space in which the deposition of the thin film of the wafer S can take place. The process chamber 10 is provided in a container shape in which an upper end is opened. A lead (not shown) is provided at the top of the process chamber 100, and the leads are opened and closed from the process chamber 100. In addition, the process chamber 100 may be formed so as to maintain airtightness with the outside, except for the gas flow path that is actively controllable to increase the deposition efficiency.

The susceptor 400 may be disposed inside the process chamber 100 and may be disposed so as to support the wafer S and face the showerhead 200. On the upper surface of the susceptor 400, a receiving groove (not shown) having a stepped shape corresponding to the wafer S is formed to support the wafer S thereon. The receiving grooves may be formed at least on one or more of the wafers S so as to form the same crystal layer together.

The susceptor 400 includes a susceptor support 410, a sidewall 430 for supporting a rim of the wafer S, and a sidewall support plate 450 for supporting the sidewall 430. The susceptor support 410 may be connected to a drive shaft 470 provided below the process chamber 100. The drive shaft 470 may be connected to a motor (not shown) to rotate the susceptor support 410 and the susceptor 400 using the rotational force of the motor. Further, the drive shaft 470 can be configured to be able to move up and down, and the susceptor support portion 410 and the susceptor 400 can be raised and lowered.

The side wall 430 and the side wall support plate 450 are configured such that a space is formed below the susceptor support portion 410. Accordingly, the side wall 430 and the side wall supporting plate 450 can reduce the volume inside the process chamber 100 by closing the space formed in the lower portion of the susceptor supporting portion 410. The sidewall 430 and the sidewall support plate 450 can prevent the first process gas G1, the second process gas G2, and the inert gas G3 from penetrating into the susceptor 400. Here, the side wall 430 may be made of a quartz material having excellent heat resistance and chemical resistance.

A heater 401 for heating the upper surface of the susceptor 400 may be provided below the susceptor 400. The heater 401 may be provided inside the susceptor support 410 to uniformly control the temperature of the upper surface of the susceptor 400. Accordingly, the heater 401 is controlled during the deposition process to create a process atmosphere so that the deposition process can smoothly proceed on the wafer S on the upper surface of the susceptor 400. In this embodiment, it is preferable to provide the heater 401 capable of heating the susceptor 400 to 1000 deg. C or higher depending on the type of the process gas.

The showerhead 200 is connected to an external gas supply source (not shown) and can supply gas into the process chamber 100. In this embodiment, at least one process gas and inert gas G3 are supplied to the process chamber 100 by the first supply pipe 210, the second supply pipe 230 and the jetting unit 300, A gas is generated on the upper surface of the wafer S on the susceptor 400, and deposition proceeds.

The first supply pipe 210, the second supply pipe 230 and the jetting unit 300 in the showerhead 200 are installed inside the process chamber 100 and are connected to the first process The gas G1, the second process gas G2 and the inert gas G3 can be supplied toward the susceptor 400 in the direction perpendicular or horizontal to the susceptor 400, respectively.

As in the present embodiment, MOCVD using a process gas using an organometallic compound is generally performed by using a hydride gas containing a Group 5 element such as ammonia (NH 3) and a trivalent element such as tri-metal gallium It is preferable to use an organometallic compound such as trimethylgallium (TMGa), trimethyl-indium (TMI), or trimethyl-aluminum (TMA).

Accordingly, a separate supply pipe for separately supplying the Group 3 gas and the Group 5 gas is connected to the showerhead 200. As the first process gas G1, any one of the above-mentioned Group 3 gas or Group 5 gas is used , And the second process gas (G2) may be the above-described Group 3 gas or Group 5 gas.

When the showerhead 200 is heated to a certain temperature or more according to the process environment at a high temperature, the process gas discharged to the process chamber 100 through the showerhead 200 is reacted at the bottom of the showerhead 200 To deposit on the shower head 200 or to form particles. In order to prevent such a phenomenon, a cooling chamber 270 for maintaining the temperature of the shower head 200 at a predetermined temperature or lower may be configured.

2 is a cross-sectional view of a showerhead according to an embodiment of the present invention.

1 and 2, a showerhead 200 according to the present invention is installed on a susceptor 400, and a first process gas G1 and a second process gas The first supply pipe 210 and the second supply pipe 230 may be installed so that the gas G2 may be injected.

A space for receiving the first process gas G1 and the second process gas G2, which are introduced from the external gas line, may be formed above the showerhead 200. The first process gas G1 and the second process gas G2 may be injected toward the susceptor 400 through the first supply pipe 210 and the second supply pipe 230.

The first supply pipe 210 may include a plurality of pipe holes passing through the first plate 251 and the second plate 252 and brazing a plurality of micro tubes between the pipe holes.

A plurality of first supply pipes 210 may be provided at equal intervals on the bottom surface of the showerhead 200 so as to inject the first process gas G1 having the same flow rate toward the susceptor 400. [

The second supply pipe 230 is formed by arranging a plurality of pipe holes passing through the first plate 251, the second plate 252 and the third plate 253 and brazing a plurality of micro tubes between the pipe holes. can do.

A plurality of second supply pipes 230 may be provided at equal intervals on the bottom surface of the showerhead 200 so as to inject the second process gas G2 of the same flow rate toward the susceptor 400. [

A plurality of second supply pipes 230 may be disposed between the first supply pipes 210 and extend upward relative to the first supply pipes 210.

Specifically, the first plate 251 constitutes the bottom surfaces of the first supply pipe 210 and the second supply pipe 230, and forms a spray surface on which the process gas is injected by being exposed to the process space. The second plate 252 is spaced a predetermined distance above the first plate 251 so that the process gas supplied to the first supply pipe 210 and the second supply pipe 230 can be supplied from another space .

And an injector 300 disposed at the center of the showerhead 200 and injecting the inert gas G3 in the horizontal direction from the inside to the outside with respect to the showerhead 200. [

The sprayer 300 includes a gas pipe 310 passing through the center of the showerhead 200 and connected to an external supply line to allow the inert gas G3 to move and a gas pipe 310 disposed below the showerhead 200, And an injector 330 for injecting the inert gas G3 into the process chamber 100. [

The injector 330 may further include a plurality of injection ports 350 along the outer circumferential surface of the cylindrical injector 330.

The gas pipe 310 may be provided to pass through the center of the showerhead 200 and provide a passage through which the second process gas G2 flowing from the external gas line is injected into the process chamber 100, Thereby preventing deflection.

As the substrate becomes larger, the configuration of the showerhead 200 that performs deposition of the thin film also becomes larger in size. The showerhead 200 forming the laminated structure of the plates 251 to 254 is deflected due to the weight of the inside of the plate as time elapses and the cooling chamber 270 disposed under the showerhead 200, The deflection can be accelerated by the weight of the fluid stored in the chamber.

The gas pipe (310) penetrates the center of the showerhead (200) and forms a fastening structure with the showerhead (200) so as to prevent breakage due to sagging and damage of internal equipment.

That is, the gas pipe 310 configured to pass through each of the plates 251 to 254 and the jetting unit 300 disposed under the gas pipe 310 can additionally generate deflection under the showerhead. Therefore, the sag preventing unit 370 may be provided between the first plate 251 and the fourth plate 254, which may cause the sagging phenomenon most severely. The sag prevention unit 370 includes a fastening member 371 installed on the upper surface of the first plate 251, a gas pipe 310 connected to the lower end of the fastening member 371, a gas pipe 310 And a support member 373 for fixing the upper end of the support member 372. [

At this time, the fastening member 371 can be fixedly installed on the upper surface of the first plate 251 by a brazing process. A screw groove is formed inside the fastening member 371 so that the lower end of the gas pipe 310 is fixed by screwing. The upper end of the gas pipe 310 may pass through the fourth plate 254 and may be screwed by a separate support member 373.

The upper surface of the second plate 252 or the third plate 253 may be provided with a sag prevention unit 370 to disperse gravity generated in the center of the shower unit 300 and the shower head 200.

A rotary motor (not shown) may be disposed between the lower part of the gas pipe 310 and the upper part of the jet part 300 so that the jet part 300 can rotate and jet the inert gas G3. As a result, a wind direction due to rotation is generated, and stirring of each gas can be performed more smoothly.

Also, the gas pipe 310 is not limited to a straight pipe as in the embodiment, but may be formed in various line shapes or may be composed of one or more pipes. The connection portion of the gas pipe 310 and the injection port 350 may have a gentle curved shape so that the inert gas supplied to the gas pipe 310 can smoothly pass through the injection port 350. [

The inert gas G3 supplied from the external line can move smoothly because the connection portion between the gas pipe 310 and the injection port 350 does not have an angle. It is possible to favor the flow of the gas because the passing gas does not directly strike the inner wall surface of the jetting port 350 and the vortex and the gas collision due to the collision do not occur.

The sprayer 300 may have a controller 360 for controlling the horizontal velocity of the gas injected from the sprayer 300 so as to control the uniformity of the thin film deposited on the surface of the wafer S. [

The control unit 360 is connected to the gas pipe 310 and may be disposed inside or outside the shower head 200.

The control unit 360 checks the supply amount of the inert gas G3 supplied from the external line and adjusts the inert gas G3 to be properly injected into the process chamber 100. In addition, The size and arrangement interval of the holes through which the gas passes can be varied so that the velocity component of the gas can be controlled.

The inert gas G3 whose supply amount or velocity component is controlled by the controller 360 is injected into the process chamber 100 through the injection port 350 in the horizontal direction of the injector. That is, the direction of the injection port 350 of the injector 300 is configured such that the gas is injected from the inside to the outside with respect to the center of the showerhead 200, so that the flow rate and the velocity of the gas controlled by the control unit 350, It can affect the ingredients.

The control unit 350 may be connected to the first supply pipe 210 and the second supply pipe 230 to control the flow rate and the speed of each process gas.

The injector 300 is disposed under the shower head 200 and functions to inject the inert gas G3 supplied from the gas pipe 310 into the process chamber.

In addition, it is preferable that the injector 330 is disposed so as not to be spaced apart from the showerhead 200 at the center of the bottom surface of the showerhead 200. If a gap is formed between the showerhead 200 and the injector 330, the mixture of process gases and particles can be accumulated in the space.

The injection port 350 may be formed along the outer circumferential surface of the cylindrical injector 330.

Specifically, the inert gas G3 transferred from the gas pipe 310 reaches the injector 330 located below the showerhead 200, and is injected into the process chamber 100 through a cylindrical injector 330 The plurality of ejection openings 350 may be arranged in rows and columns.

According to the embodiment, the injector 330 having a cylindrical shape is shown. However, the injector 330 may be modified into various shapes, and the size and arrangement of the injection port 350 may be variously changed.

The jetting ports 350 are disposed toward the outside of the showerhead 200 in the longitudinal direction parallel to the showerhead 200 and the susceptor 400 so as to be horizontally injected at the lower end of the center of the showerhead 200 The inert gas G3 injected by the injection port 350 may be injected in a direction different from the direction in which the first process gas G1 and the second process gas G2 are injected.

That is, the inert gas G3 injected from the injection port 350 shown in FIG. 2 is injected in the horizontal direction from the inside to the outside of the showerhead 200, and is injected from the first supply pipe 210 and the second supply pipe 230 The first process gas G1 and the second process gas G2 are injected toward the showerhead. Accordingly, the respective gases injected in different directions collide with each other, and the mixed process gas is deposited on the wafer (S).

Since the inert gas G3 injected in the horizontal direction blows toward the first supply pipe 210 and the second supply pipe 230 formed on the bottom surface of the first plate as described above, It is possible to suppress the phenomenon that the process gas and the second process gas G2 react on the bottom surface of the showerhead 200 to deposit on the showerhead 200 or to form particles.

That is, since the inert gas G3 injected from the jetting unit 350 injects gas into the bottom surface of the shower head 200 in which the first supply pipe 210 and the second supply pipe 230 are disposed, The generation of particles generated at the bottom of the showerhead 200 is relatively reduced. The first process gas G1 and the second process gas G2 are supplied to the first supply pipe 210 and the second supply pipe through the opening of the second supply pipe G3, As the process gas moves away from the periphery and descends into a parabolic shape, the reaction may occur while being deposited.

In addition, the position of the sprayer 300 may be disposed at the center of the showerhead 200 to make the density distribution of the first process gas G1 and the second process gas G2 in the process chamber 100 uniform.

Specifically, an exhaust pump (not shown) is disposed below the process chamber 100 to assist in mixing process gases that have not been mixed with the remaining process gases. Accordingly, the first process gas G1 and the second process gas G2 are biased toward the outside of the process chamber 100 by the force of the exhaust port of the exhaust pump, ) In the thickness direction of the substrate.

However, in the case of the present invention, the jetting unit 300 is disposed at the center of the showerhead 200, and the inert gas G3 injected from the jetting unit 300 has a relatively large density distribution .

Therefore, according to the present invention, due to a process in which the density distribution of the process gas in the process chamber 100 is distributed relatively to the inside due to the injection position of the sprayer 300 and the amount of the process gas due to the suction force in the exhaust pump, A relatively large number of processes are simultaneously generated outside the outer casing 100. As a result, each process can be canceled so that the density distribution of the process gas as a whole can be evenly distributed within the process chamber 100.

Therefore, the uniformity of the thin film deposited on the wafer S placed on the upper surface of the susceptor 400 can be made relatively superior to the prior art.

The cooling chamber 270 is disposed under the showerhead 200 and between the first supply pipe 210 and the second supply pipe 230 so that the first process gas 210 and the second process gas 230 And may be cooled when supplied into the process chamber 100.

The cooling chamber 270 is formed by forming a predetermined space between the first plate 210 and the second plate 230. The cooling gas is supplied to the cooling chamber 270 through the shower head 200, It is possible to perform a function for maintaining an appropriate temperature.

The first and second supply pipes 210 and 230 are connected to the cooling chamber 270 through a space in which the chamber is disposed so that the refrigerant can flow around the first supply pipe 210 and the second supply pipe 230, .

In addition, an inlet and an outlet may be provided so that the refrigerant can flow into and circulate in the cooling chamber 270.

The inert gas G3 or the second process gas G2 supplied to the gas pipe is supplied to the diffuser unit 300 through the diffuser unit 300, (340).

The diffuser portion 340 may form a certain space in the jetting portion 300 and may be connected to the jetting port 350 of the injector 330.

The inert gas G3 supplied from the gas pipe 310 can stay in the diffuser unit 340 for a predetermined time and a space in which a gas having a uniform density is distributed before the gas is injected into the process chamber 100 is formed once more The uniformity of the gas supplied to the wafer S on the susceptor 400 can be improved.

In this embodiment, the first process gas G1 is supplied to the first supply pipe 210, the second process gas G2 is supplied to the second supply pipe 230, and the injection hole 350 is filled with the inert gas G3 However, the limited gas is not supplied to each supply pipe and the injection port, and the process gas and the inert gas supplied to each supply pipe and the injection port can be exchanged in various ways.

3 is a cross-sectional view of a shower head according to another embodiment of the present invention.

1 and 3, the showerhead 200 is installed above the susceptor 400 and the first process gas G1 is supplied into the showerhead 200 through the first supply pipe 210 may be installed.

A space for receiving the first process gas G1 introduced from the external gas line may be formed on the showerhead 200. [ The first process gas G1 may be injected toward the susceptor 400 in a plurality of the first supply pipes 210.

It is also possible to constitute the jetting section 300 which is disposed in the center of the showerhead 200 and in which the second process gas G2 is jetted in the horizontal direction from the inside to the outside of the wafer S. [

The showerhead 200 is provided with a first supply pipe 210. The first supply pipe 210 is connected to the susceptor 400 in the vertical direction so that the first process gas G1 can be vertically dropped Lt; / RTI >

A plurality of first supply pipes 210 may be installed at equal intervals on the bottom surface of the showerhead 200 so as to inject the first process gas G1 having the same flow rate toward the susceptor 400. [

In addition, a cooling chamber 270 may be installed around the first supply pipe 210. That is, in order to cool each process gas flowing into the plurality of first supply pipes 210, an independent space capable of contacting the inert gas G3 is provided on the outer surface of the first supply pipe.

That is, a cooling chamber 270 may be formed in the periphery of the first supply pipe between the first plate 251 and the second plate 252 to prevent the process gas from being directly deposited on the bottom surface of the showerhead 200. The first plate 251 may form the bottom surface of the cooling chamber 270 and the second plate 252 may form the top surface of the cooling chamber 270.

3, the jetting unit 300 includes a gas pipe 310 passing through the center of the showerhead 200 and a second process gas G2 disposed at the lower end of the center of the showerhead 200, The injector 330 injects the fuel in the horizontal direction from the inner side to the outer side.

The jetting section 300 can rotate in the gas pipe 310 and inject the second process gas G2 supplied from the external gas line in the horizontal direction through the plurality of jetting ports 350 of the jetting section 300 .

The second process gas G2 injected from the injector 300 into the process chamber 100 reacts with the first process gas G1 of the first feeder 210 and has a uniform density distribution So that a uniform thin film on the wafer S can be formed. The jetting part 300 is sprayed toward the lower surface of the first plate 251 of the second process gas G2 so that the process of mixing the process gas G2 around the opening of the first supply pipe 210 on the lower surface of the first plate 251 It is possible to prevent gas from being generated and being deposited on the shower head 200 or forming particles.

Specifically, since the second process gas G2 is injected in the horizontal direction from the inner side to the outer side of the lower surface of the showerhead 200, the first process gas G1 injected from the first supply pipe 210 crosses each other, The second process gas G2 is blown out from the injection port 350. As a result, the process gas is hardly mixed in the vicinity of the opening of the first supply pipe 210 relatively.

Therefore, the process gas may be deposited on the periphery of the lower surface of the first plate 251 or particles may be generated less. In addition, since the particles deposited on the periphery of the showerhead 200 are reduced, the lifetime of the process apparatus is improved and the time interval required for cleaning is increased, which is advantageous in terms of cost.

As described above, the first and second process gases G1 and G2 are biased toward the outside of the process chamber 100 due to the structure of the exhaust pump and the exhaust port. The uniformity of the thin film deposited by the density of the process gas is reduced. The second process gas G2 is sprayed from the inside of the center of the process chamber 100 to the outside in accordance with the structure of the sprayer 300 A large amount of gas is distributed relatively to the inside of the process chamber 100, thereby forming a uniformly uniform process gas density in the process chamber 100.

Accordingly, the deposition of the thin film having improved uniformity can be performed according to the structure of the jetting unit 300 of the present invention.

FIG. 4 is an exploded perspective view of a showerhead and a spraying unit of a chemical vapor deposition apparatus according to another embodiment of the present invention. FIG.

However, the description of the configuration corresponding to the previous embodiment will be omitted in order to avoid duplication.

The opening portions of the first supply pipe 210 and the second supply pipe 230 may be arranged on the bottom surface of the shower head so as to be staggered from each other. According to this embodiment, each of the supply pipes is configured to have a constant gap and a predetermined size, but the present invention is not limited thereto. It is also possible to adjust the supply amount of the process gas according to the position by adjusting the sizes of the first and second supply pipes 210 and 230.

Further, the structure of the bottom portion of the shower head 200 can be provided with the inert gas opening portion 351 through the opening portion having a small size and a narrow space as in the embodiment. That is, the inert gas G3 can be injected along the circumferential direction. The inert gas G3 can prevent the process gas from being deposited on the inner wall of the process chamber 100 without participating in the deposition reaction and serves as a guide to guide the process gas in the direction of the susceptor 400 .

At this time, the opening 351 for supplying the inert gas may be configured such that the inert gas G3 is supplied from the outside through a flow path different from the flow path through which the first process gas G1 and the second process gas G2 are supplied . Accordingly, the gas pipe 310 may be divided into the outer circumferential portion of the circumferential portion of the shower head outside the direction of the injector 330 to supply the inert gas G3.

The inert gas G3 injected into the process chamber 100 through the gas pipe 310 may be a purge gas such as nitrogen (N2) or argon (Ar).

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

Process chamber: 100 Showerhead: 200
First supply pipe: 210 Second supply pipe: 230
Delivery Division: 300 Gas Pipes: 310
Injector: 330 nozzle: 350
Susceptor: 400 wafers: S
First process gas: G1 Second process gas: G2
Inert gas: G3 Diffuser part: 340
Control section: 360

Claims

A process chamber;
A susceptor for supporting the wafer inside the process chamber;
A showerhead disposed above the susceptor and having a first supply pipe and a second supply pipe for supplying a first process gas and a second process gas into the process chamber; And
And a jetting portion disposed at the center of the showerhead for jetting an inert gas radially from the inside to the outside with respect to the center of the showerhead.

The method according to claim 1,
Wherein the jetting portion passes through the center of the showerhead and is connected to an external supply line,
And an injector disposed under the shower head and injecting the inert gas supplied from the gas pipe into the process chamber.

3. The method of claim 2,
Wherein the injector further comprises a plurality of ejection openings along a cylindrical outer circumferential surface.

The method of claim 3,
Wherein the jetting unit further comprises a control unit for controlling the horizontal velocity of the inert gas jetted from the jetting unit so as to control the uniformity of the thin film deposited on the surface of the wafer.

The method of claim 3,
Wherein the first process gas and the second process gas supplied from the first supply pipe and the second supply pipe are arranged to be injected in the direction of the susceptor.

The method of claim 3,
Characterized in that the amount of the gas injected from the first process gas injected from the first supply pipe, the second process gas injected from the second supply pipe, and the inert gas injected from the injection part can be selectively controlled A chemical vapor deposition apparatus.

The method according to claim 1,
And a cooling chamber provided between the lower portion of the showerhead and the first supply pipe and the second supply pipe to cool the first process gas and the second process gas supplied into the process chamber, .

The method according to claim 1,
Wherein the connection portion of the gas pipe and the injection port has a curved shape so that the inert gas supplied to the gas pipe can smoothly pass through the injection port.

The method of claim 3,
And a diffuser part for forming a uniform space for uniform thin film deposition inside the injector.

A process chamber;
A susceptor for supporting the wafer inside the process chamber;
A showerhead disposed above the susceptor and having a first supply pipe for supplying a first process gas into the process chamber; And
And a jetting portion disposed at the center of the showerhead for jetting a second process gas in a horizontal direction from the inside to the outside with respect to the center of the showerhead.

11. The method of claim 10,
Wherein the jetting portion passes through the center of the showerhead and is connected to an external supply line,
And an injector disposed below the showerhead and injecting the second process gas supplied from the gas pipe into the process chamber.

12. The method of claim 11,
Wherein the injector has a control unit for controlling the horizontal velocity of the gas injected from the jetting unit so as to control the uniformity of the thin film deposited on the surface of the wafer.

The method according to claim 1 or 11,
Wherein the gas pipe passes through the center of the showerhead and is fastened to the upper or lower portion of the showerhead to prevent sagging of the bottom of the showerhead.

A process chamber;
A susceptor for supporting the wafer inside the process chamber;
A showerhead installed above the susceptor and injecting a first process gas into the process chamber toward the susceptor; And
And a spraying portion disposed at the center of the showerhead for spraying gas in a horizontal direction toward the outside from the center portion of the showerhead.