KR20110133169A - Source supplying apparatus and substrate treating apparatus having the same - Google Patents

Abstract

PURPOSE: A resource material supply device and a substrate processing device with the same are provided to continuously perform a thin film deposition process after the temperature of the substrate is changed, thereby increasing production. CONSTITUTION: A chamber includes a chamber body and a chamber lead. The chamber body has an inner space. The chamber lead seals a reaction space. A substrate placing unit includes a substrate placing plate and a placing plate driving unit. At least two resource material jetting units jet at least two resource materials onto a substrate. At least one heating unit(320a,320b) is placed between at least two resource material jetting units. Cooling units(330a,330b) are placed between the resource material jetting units.

Description

Raw material supply apparatus and substrate processing apparatus having the same {Source supplying apparatus and substrate treating apparatus having the same}

The present invention relates to a raw material supply apparatus and a substrate processing apparatus having the same, and more particularly, to a raw material supply apparatus capable of supplying a raw material and controlling a temperature of a substrate, and a substrate processing apparatus having the same.

In general, to manufacture a semiconductor device, a display device, a light emitting diode, or a thin film solar cell, a thin film deposition process for depositing a thin film of a specific material on a substrate, or a photo process for exposing or hiding selected areas of the thin film using a photosensitive material Then, an etching process of removing and patterning the thin film of the selected region is performed. Among these processes, a thin film deposition process and an etching process are performed in a substrate processing apparatus optimized in a vacuum state.

In a substrate processing apparatus, a gas distribution apparatus is used to distribute a uniform process gas inside a process chamber having a reaction space. In general, chemical vapor deposition (CVD) is used as a main method for depositing a thin film on a substrate. In addition, two or more thin films must be formed continuously in one chamber in order to reduce the number of deposition equipment and shorten the production time.

However, when the deposition temperature of the thin film is different, since the temperature control time is required after the deposition of one thin film, the thin film deposition process cannot be performed at the temperature control time. For example, when the active layer of the light emitting diode is formed by stacking at least one of the GaN layer and the InGaN layer, since the deposition temperature of the GaN layer and the InGaN layer is different, two chambers having different process temperatures or a single chamber are used. In order to lower or raise the temperature, a predetermined time of temperature control is required. Therefore, the production time is delayed during the temperature control time, thereby lowering the productivity.

The present invention provides a raw material supply device and a substrate processing apparatus having the same that can process two or more thin films in one chamber.

The present invention provides a raw material supply device capable of processing two or more thin films having different processing temperatures in one chamber and shortening processing time, and a substrate processing apparatus having the same.

The present invention provides a raw material supply apparatus having a heating means and a cooling means capable of supplying at least two or more process gases and adjusting the temperature of the substrate, and a substrate processing apparatus having the same.

Raw material supply apparatus according to an aspect of the present invention comprises at least two or more raw material injection unit for injecting at least two or more raw materials onto the substrate; At least one heating means provided between the at least two raw material injection parts; And at least one cooling means spaced apart from the heating means and provided between the at least two raw material injection portions.

The raw material injection unit may include a plurality of injection units including an injection space extending from an internal space and an internal space receiving different raw materials, a refrigerant moving space, and a plurality of injection grooves passing through the moving space. And a plurality of jetting parts and the cooling parts are stacked, and each of the injection grooves corresponds to injection nozzles of the plurality of injection parts, respectively.

The at least one heating means and the cooling means are disposed adjacent to each other or intersect with the at least one raw material injection therebetween.

The at least one heating means and cooling means are the same or different in width.

It further comprises an auxiliary exhaust port provided in the central region of the raw material injection portion, the heating means and the cooling means.

The plurality of raw material injection parts, the at least one heating means and the cooling means can be separated and combined.

Protrusions are formed on both sides of the at least two raw material injection parts, and grooves corresponding to the protruding portions are formed on both sides of the at least one heating means and the cooling means, and the grooves are inserted into the protruding portions so that the heating means and cooling are performed. Means are fastened between the raw material injection parts.

At least one of the cooling means is provided with a temperature sensor underneath.

According to another aspect of the present invention, a substrate processing apparatus includes a chamber having a reaction space; A substrate setter positioned in the reaction space of the chamber and having at least one substrate placed therein; And a raw material supply device provided to face the substrate settlement unit in the reaction space of the chamber to supply at least two or more raw materials and to control the temperature of the substrate, wherein the raw material supply device includes at least two or more raw materials. A plurality of raw material spraying portions for spraying the material onto the substrate; At least one heating means provided between the plurality of raw material injection portions; And at least one cooling means spaced apart from the heating means and provided between the plurality of raw material injection portions.

And an exhaust port connected to an exhaust device at a lower side of the chamber, and the substrate setter further includes temperature control means for adjusting a temperature of the substrate.

The temperature adjusting means heats the substrate to a first process temperature, the heating means heats the substrate to a second process temperature higher than the first process temperature, and the cooling means heats the substrate to the first process temperature. And a third process temperature between and a second process temperature.

The substrate holder rotates and the substrate placed in the substrate holder is heated or cooled through the heating means and the cooling means, and a thin film is deposited on the substrate while passing through the raw material injection portion.

It further comprises an auxiliary exhaust port provided in the central region of the raw material supply device and connected to the auxiliary exhaust device.

A valve is further provided between the auxiliary exhaust port and the auxiliary exhaust means, and the exhaust pressure is adjusted by the valve.

A cooling collecting device is further provided between the auxiliary exhaust port and the auxiliary exhaust means to cool the unreacted raw material gas in the chamber and to collect particles therein.

The present invention provides a raw material supply device having a plurality of raw material injection parts for supplying at least two or more raw materials, and at least one heating means and cooling means provided between at least two or more raw material injection parts, and a substrate treatment having the same. Provide the device. Accordingly, the second process is performed by heating the substrate to the first process temperature using the temperature adjusting means in the substrate mounting plate on which the substrate is placed, and the substrate rotating by the rotation of the substrate mounting plate is higher than the first processing temperature by the heating means. Heated to a temperature, and cooling means is used to cool the substrate to a third process temperature between the first and second process temperatures. The first thin film and the second thin film are thus formed on the substrate which is rotated by the raw material sprayed through the raw material spraying portion adjacent to the heating means or the cooling means after maintaining the substrate at the second process temperature or the third process temperature.

According to the present invention, by supplying the raw material using the raw material supply device and by adjusting the temperature of the substrate, the thin film deposition process can be continuously performed without time delay after controlling the temperature of the substrate, thereby reducing the production time. Productivity can be improved.

It is also possible to provide an auxiliary exhaust port in the central region of the raw material supply device and to connect the auxiliary exhaust device. Thus, by providing the auxiliary exhaust port and the auxiliary exhaust device on the upper side of the chamber, the straightness of the supply path of the raw material is improved. Accordingly, the supply path of the raw material in the center of the reaction region may be naturally guided to the inside and the outside, and the raw material may be distributed in the same amount on the entire surface of the substrate to improve deposition uniformity according to the position of the substrate.

1 is a schematic cross-sectional view of a substrate processing apparatus having a raw material supply apparatus according to an embodiment of the present invention.
2 to 4 is a schematic cross-sectional view, plan view and perspective view of a raw material supply apparatus according to an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of the heating means of the raw material supply apparatus according to an embodiment of the present invention.
6 to 10 are schematic plan views of various modifications of the raw material supply apparatus according to an embodiment of the present invention.
11 is a cross-sectional view of a light emitting diode.
12 and 13 are process flowcharts illustrating a method of manufacturing a light emitting diode using a raw material supply device according to an embodiment of the present invention.
14 and 15 is a schematic perspective view and a cross-sectional view of the detachable and joinable raw material supply apparatus according to an embodiment of the present invention.
16 is a schematic cross-sectional view of a substrate processing apparatus having a raw material supply apparatus according to another embodiment of the present invention.
17 and 18 are schematic plan and perspective views of a raw material supply apparatus according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

1 is a cross-sectional conceptual view of a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a conceptual diagram illustrating a raw material supply apparatus according to an embodiment of the present invention. 3 and 4 are a schematic conceptual view and a schematic perspective view of a raw material supply apparatus according to an embodiment of the present invention. And, Figure 5 is a schematic cross-sectional view of the heating means used in the raw material supply apparatus according to an embodiment of the present invention.

1 to 4, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 having a reaction space, and a substrate placing part disposed in the reaction space of the chamber 100 to settle the substrate 10. 200 and a raw material supply device 300 for supplying different raw materials to the reaction space of the chamber 100. In addition, the raw material supply device 300 includes a raw material spraying unit 310, a heating means 320 and a cooling means 330.

The chamber 100 includes a chamber body 110 having an inner space and a chamber lid 120 detachably coupled to the chamber body 110 to seal the reaction space. The chamber body 110 is manufactured in a cylindrical shape with an open top. In addition, the chamber lid 120 is manufactured in a plate shape to shield the upper portion of the chamber body 110. Here, although not shown, a separate sealing member such as an O-ring or a gasket may be provided on the coupling surface of the chamber body 110 and the chamber lid 120. In addition, a separate fixing member for coupling and fixing the chamber body 110 and the chamber lid 120 may be further provided. In addition, one side of the chamber body 110 is provided with an entrance and exit through which the substrate 10 enters, and at least one exhaust port 130 is provided in at least one region of the chamber body 110. The exhaust port 130 may be connected to an exhaust device (not shown) to adjust the pressure inside the chamber 100 by the exhaust device and exhaust the unreacted process gas. Of course, the present invention is not limited thereto, and the chamber 100 having various structures may be used. For example, a single body chamber can be used.

The substrate mounting unit 200 includes a substrate mounting plate 210 for housing at least one substrate 10, and a temperature adjusting unit 220 provided in the substrate mounting plate 210 to control the substrate 10 to a first process temperature. ) And a base plate driver 240 for elevating and lowering the substrate base plate 210, and a connecting shaft 230 connecting the base plate driver 240 and the substrate base plate 210. In addition, a plurality of lift pins (not shown) may be further provided for loading and unloading the substrate 10. The substrate mounting plate 210 is manufactured in a plate shape so that at least one substrate 10 is placed thereon. For example, when four substrates 10 are placed on the substrate mounting plate 210, a thin film may be deposited on the four substrates 10 by performing one deposition process. In this case, the number of substrates 10 placed on the substrate mounting plate 210 may be adjusted according to the size of the substrate mounting plate 210 and the size of the substrate 10. In addition, the substrate 10 is effectively disposed in a radial form with respect to the center of the substrate mounting plate 210. That is, the distances between the center of the substrate mounting plate 210 and the center of the plurality of substrates 10 are equally arranged with each other. Therefore, the center of the substrate mounting plate 210 is provided with a space in which the substrate 10 is not placed. On the other hand, the substrate 10 may be fixed on the substrate mounting plate 210 after being fixed by a separate fixing device. For example, when using a sapphire substrate, the sapphire substrate may be seated in a substrate seating groove in a tray (not shown) in which a plurality of substrate seating grooves are formed, and then the tray may be placed on the substrate mounting plate 210. At this time, the substrate mounting plate 210 may be provided with a separate fixing means for fixing the substrate 10 or the movement of the tray on which the substrate 10 is mounted. In addition, the temperature adjusting means 220 provided in the substrate mounting plate 210 may heat the substrate 10 to adjust the substrate 10 to a first process temperature. Of course, the temperature control means 220 may be located on the surface as well as the inside of the substrate mounting plate 210, it may be located outside the substrate mounting plate 210. The substrate mounting plate 210 is raised, lowered, and rotated by the mounting plate driver 230. Through this, the process position of the substrate 10 may be set, and the loading and unloading of the substrate 10 may be easily performed. At this time, a stage including a motor may be used as the mounting plate driver 240. And, the base plate driver 240 is effectively provided on the outside of the chamber 100. Through this, particles generated by the movement of the base plate driver 240 may be prevented. Here, the driving force (raising and lowering force and rotational force) of the base plate driving unit 240 is transmitted to the substrate base plate 210 by the connecting shaft 230. The connecting shaft 230 penetrates the bottom surface of the chamber 100 and is connected to the substrate mounting plate 210. In this case, a sealing means (for example, a bellows) 140 for sealing the chamber 100 may be provided in the through hole region of the chamber 100 through which the connecting shaft 230 passes.

The raw material supply device 300 may be provided between a plurality of raw material injection parts 310 for injecting a plurality of raw materials and at least two raw material injection parts 310 to adjust the substrate 10 to a second process temperature. And heating means 320 and cooling means 330 provided between the at least two raw material injection parts 310 to lower the temperature of the substrate 10 to maintain the second process temperature to the first process temperature. That is, the substrate 10 heated to the first process temperature by the temperature adjusting means 220 provided in the substrate mounting plate 210 is heated to the second process temperature using the heating means 320, and the cooling means. 330 cools the substrate 10 heated to the second process temperature to the first process temperature. Of course, the heating means 320 may heat not only a constant second process temperature but also various second process temperatures higher than the first process temperature, and the cooling means 330 is also heated to various second process temperatures. Can be cooled to various third process temperatures between the first and second process temperatures. On the other hand, the raw material injection unit 310 is provided with at least two or more, if provided with two or more is provided in a semi-circular shape, when provided with three or more is produced in a substantially fan-shaped shape that the width of the inner side is narrow and wide to the outside do. In addition, the heating means 320 and the cooling means 330 are provided between at least two raw material injection portion 310. 3 and 4, the raw material supply device 300 includes four raw material injection parts 310a, 310b, 310c, and 310d, two heating means 320a and 320b, respectively. The case of including cooling means 330a and 330b will be described. Here, the two heating means 320 and the cooling means 330 are disposed to form an angle of 90 ° to each other. That is, as shown in FIGS. 3 and 4, the first heating means 320a is provided between the first and second raw material injection parts 310a and 310b, and the second heating means 320b is provided to the second and the second heating means 320b. It may be provided in the third raw material injection unit (310b, 310c). 3 and 4, the first cooling means 330a is provided between the third and fourth raw material injection parts 310c and 310d, and the second cooling means 330b is provided in the fourth and the fourth cooling means 330b. The first raw material injection parts 310d and 310a may be provided. Of course, the number and arrangement of the raw material injection unit 310, the heating means 320 and the cooling means 330 may be changed in various ways depending on the process conditions, which will be described in more detail later through the embodiments. On the other hand, the raw material supply unit 300 may include a raw material storage unit 400 for supplying a raw material, the refrigerant storage unit for supplying a refrigerant for cooling the raw material of the raw material supply device 300 (not shown) C) may be further provided. The refrigerant stored in the refrigerant storage unit may also be supplied to the cooling unit 330.

Meanwhile, the following description will focus on an apparatus for depositing a binary compound on a substrate using two raw materials. That is, the first and second raw material storages 410 and 420 are provided to spray the first and second raw materials of the first and second raw material storages 410 and 420 onto the substrate 10, respectively. do. Of course, the present embodiment is not limited thereto, and a larger number of raw materials may be used. The first raw material is for example trimethylgallium (TMGa), biscyclopentadienylmagnesium (Cp ₂ Mg), trimethyaluminum (TMAl) and trimethylindium that can be used to form light emitting diodes, for example. (trimethylindium; TMIn) and the like, and the second raw material is nitrogen gas such as nitrogen (N ₂ ) and ammonia (NH ₃ ), silicon gas such as SiH ₄ and SiH ₆ , and hydrogen (H ₂ ). And the like. Here, the first and second raw material injection parts 310a and 310b may inject trimethylgallium as the first raw material and nitrogen gas as the second raw material, for example, and the third and fourth raw material materials. The injection units 310c and 310d may inject trimethylgallium and trimethylindium as the first raw material and inject nitrogen gas into the second raw material. Thus, for example, a GaN film may be formed on the substrate 10 passing through the first and second raw material injection parts 310a and 310b by the rotation of the substrate mounting plate 210, and the third and fourth raw material may be formed. For example, an InGaN film may be formed on the substrate 10 passing through the injection parts 310c and 310d. In addition, the substrate 10 may be heated by the heating means 320 before and during the deposition of the GaN film, and the substrate 10 may be cooled before and during the deposition of the InGaN film. As such, the GaN film and the InGaN film may be stacked and repeatedly stacked a plurality of times as necessary to form, for example, an active layer of a light emitting diode.

The raw material spraying unit 310 receives the first and second raw material through the first and second raw material supply pipes 412 and 422 and sprays it on the substrate 10 through the separated space (or root). do. The raw material spraying unit 310 cools and sprays the first and second raw materials. The raw material injection part 310 is a first injection part 311 which receives the first raw material of the first raw material storage part 410 through the first raw material supply pipe 412 and sprays it, and the second raw material And a second injection unit 312 for receiving the second raw material of the material storage unit 420 through the second raw material supply pipe 412 and spraying it, and a cooling unit 313 for cooling the injected raw material. do. Here, the first and second injection parts 311 and 312 and the cooling part 313 are stacked up and down. In this case, as shown in FIG. 1, the cooling unit 313 is positioned between the first and second injection units 311 and 312 and the substrate mounting unit 200. As a result, raw materials in the first and second sprayers 311 and 312 may be prevented from being decomposed by the heat of the substrate setter 200. As mentioned above, the injection unit may vary in various ways depending on the number of raw materials.

The first spray unit 311 includes a first spray body 311-1 having a first inner space A provided with a first raw material material, and a plurality of first sprays extending from the spray body 311-1. The nozzle 311-2 is provided. The second injector 312 includes a second injector body 312-1 having a second inner space B provided with a second raw material, and a plurality of second injectors extending from the injector body 312-1. The nozzle 312-2 is provided. The cooling unit 313 includes a cooling body 313-1 having a refrigerant moving space C in which the refrigerant moves, and a first injection groove 313 interlocked with the first injection nozzle 311-2. -2) and a second injection groove 313-3 in communication with the second injection nozzle 312-2. The first injection body 311-1 of the first injection unit 311 is provided with a first raw material injection hole 311-3 receiving the first raw material. The first raw material injection hole 311-3 is connected to the first raw material storage 410 through a first raw material supply pipe 412 passing through the chamber lid 120. In addition, a second raw material injection hole 312-3 receiving the second raw material is provided in the second injection body 312-1 of the second injection unit 311. The second raw material injection hole 312-3 stores the second raw material through the second raw material supply pipe 422 penetrating through the first internal space A of the first injection part 311 and the chamber lid 120. It is connected to the unit 420. The cooling unit 313 includes a coolant injection port 313-4 for injecting a coolant into the coolant moving space C and a coolant exhaust port 313-5 for discharging the coolant in the coolant moving space C. The coolant injection port 313-4 and the coolant exhaust port 313-5 communicate with a coolant storage unit (not shown). In this case, a refrigerant supply pipe such as a pipe may be used for communication. The refrigerant inlet 313-4 and the refrigerant exhaust port 313-5 may include a second internal space B of the second injection unit 312, a first internal space A of the first injection unit 311, and In addition, the chamber lead 120 may be connected to the refrigerant storage unit. Of course, the present invention is not limited thereto, and the coolant injection port 313-4 and the coolant exhaust port 313-5 may be injected through the side surface of the cooling body 313-1. That is, the coolant inlet 313-4 and the coolant exhaust port 313-5 may communicate with the coolant storage unit through the chamber body 110 and the inner space of the chamber.

As described above, the first raw material provided in the first internal space A of the first injection unit 311 passes through the second internal space B of the second injection unit 312. 311-2 and the first injection groove 313-2 of the cooling unit 313 are injected into the internal space (that is, the reaction space) of the chamber 100. In addition, the second raw material provided in the second internal space B of the second injection unit 312 may pass through the second injection nozzle 312-2 and the second injection groove 313-3 of the cooling unit 313. It is injected into the interior space of the chamber 100 through.

As shown in FIG. 5, the heating means 320 is formed in a bar shape having a predetermined width and thickness, and includes a heating body 322 having a predetermined space therein and at least one heating body provided in the heating body 322. 324). Here, FIG. 5A is a schematic sectional view of the heating means 320 in the major axis direction, and FIG. 5B is a schematic sectional view of the heating means 320 in the minor axis direction. The length of the long axis of the heating body 322 may be the same as the length of the long axis of the raw material injection portion 310, the length of the short axis can be variously adjusted according to the process conditions. In addition, a lamp or the like may be used as the heating body 324, and may be provided in at least one of the heating bodies 322. The heater 324 may be driven by a power source applied from the outside to emit heat. The heater 324 is provided with a power regulator (not shown) capable of adjusting the power applied from the outside to supply power through the heater. The heating temperature of 324 can be adjusted. Therefore, the heating body 324 may heat the substrate 10 at various second process temperatures higher than the first process temperature by the temperature adjusting means 220 inside the substrate mounting plate 210. On the other hand, since the heating means 320 heats the substrate 10 by dissipating high temperature heat, heat may be transferred to the adjacent raw material spraying unit 310, which causes the raw material in the raw material spraying unit 310 to be heated. The material may decompose. Therefore, the heating means 320 is preferably insulated from the raw material injection portion 310 to minimize the heat transferred to the raw material injection portion 310, for this purpose at least the heating body in contact with the raw material injection portion 310 Both sides of the 322 may be insulated with a heat insulating material or the like. In addition, the heating means 320 may be provided with a transmission window 326 made of glass or the like below. The transmission window 326 may be provided to prevent the raw material from flowing into the heating means 320. In addition, the reflective plate 328 may be formed to surround the top and side surfaces of the heating body 324 so that the heat generated from the heating body 324 is transferred to the substrate 10 without loss. Of course, the reflective plate 328 may be formed on the upper surface and side surfaces of the inside of the heating body 322.

The cooling means 330 may be manufactured in a bar shape having a predetermined width and thickness, and a refrigerant passage may be provided therein. The coolant 330 may flow into the cooling means 330 from one side of the upper portion to flow along the flow path inside the cooling means 330, and the coolant may flow out to the other side of the upper portion. To this end, at least one refrigerant inlet and at least one refrigerant outlet may be provided on the cooling unit 330. The cooling means 330 adjusts at least one of a type, a temperature, and an inflow amount of the refrigerant to heat the substrate 10 heated to various second process temperatures higher than the first process temperature by the heating means 320 at the first process temperature. Or cooling to a variety of temperatures lower than the second process temperature and higher than the first process temperature. The coolant flowing into the cooling means 330 may be the same as or different from the coolant supplied to the raw material injection part 310, and for example, coolant may be used. On the other hand, the plurality of cooling means 330 is at least one, preferably at least two cooling means (330a, 330b) facing each other is provided with a temperature measuring unit (not shown) to adjust the temperature inside the chamber 100 You can also measure. The temperature measuring unit may be provided on a lower surface of the cooling unit 330, and a region of the cooling unit 330 may be recessed and embedded in the recessed region.

As described above, the raw material supply device 300 according to an embodiment of the present invention includes at least one heating means 320 and cooling means 330 between the plurality of raw material injection parts 310 to settle the substrate. By allowing the substrate 10 rotated by the plate 210 to maintain the first process temperature and the second process temperature, two thin films having different process temperatures can be continuously deposited in one chamber without time delay. Therefore, it is possible to reduce the deposition time of the thin film, thereby reducing the production time of the device, thereby improving the productivity.

As described above, the raw material supply device 300 according to the present invention may be variously modified as well as four raw material injection parts 310, two heating means 320 and cooling means 330, respectively. 6 to 10 illustrate a raw material supply device 300 according to the modified example.

As shown in FIG. 6, the raw material supply device 300 may be configured by two raw material injection parts 310a and 310b, and one heating means 320 and cooling means 330, respectively. In addition, as shown in Fig. 7, six raw material injection parts 310a, 310b, 310c, 310d, 310e, 310f, three heating means 320a, 320b, 320c and cooling means 330a, 330b, respectively. , 330c may constitute a raw material supply device 300. At this time, the heating means (320a, 320b, 320c) and the cooling means (330a, 330b, 330c) may be disposed adjacent to each other. That is, the heating means 320a is disposed between the two raw material injection parts 310a and 310b, the heating means 320b is disposed between the two raw material injection parts 310b and 310c, and the two raw material injection parts ( Heating means 320c may be disposed between 310c and 310d. In addition, the cooling means 330a is disposed between the two raw material injection parts 310d and 310e, the cooling means 330b is disposed between the two raw material injection parts 310e and 310f, and the two raw material injection parts ( Cooling means 330c may be disposed between 310f and 310a. Here, the three heating means 320 may be heated to different temperatures, or may be heated to the same temperature. Similarly, the three cooling means 330 can also be cooled to different temperatures, or can be cooled to the same temperature.

In addition, the arrangement of the heating means 320 and the cooling means 330 may be changed. As shown in FIGS. 8 and 9, the heating means 320 and the cooling means 330 may be alternately arranged. That is, as shown in FIG. 8, the heating means 320a is disposed between the two raw material injection parts 310a and 310b, and the cooling means 330a is disposed between the two raw material injection parts 310b and 310c. The heating means 320b may be disposed between the two raw material injection parts 310c and 310d, and the cooling means 330b may be disposed between the two raw material injection parts 310d and 310a. In addition, as shown in FIG. 9, even when six raw material injection parts 310 and three heating means 320 and cooling means 330 are provided, heating means 320 and cooling means 330 are provided. May be alternately disposed between the raw material injection parts 310.

In addition, as illustrated in FIG. 10, the width of the heating means 320 and the cooling means 330 may be different to configure the raw material supply device 300. That is, the cooling time of the substrate 10 heated by the heating means 320 can be set longer by making the width of the cooling means 330 wider. In this case, although the coolant may be introduced through the cooling means 330, the coolant may be naturally cooled without introducing the coolant. Of course, it is also possible to increase the width of the heating means 320 to increase the heating time. That is, the raw material supply device 300 according to the present invention can adjust the width of the raw material injection unit 310, the heating means 320 and the cooling means 330 to adjust the process time according to the characteristics of the light emitting diode. have.

As a result, the raw material supply device 300 according to an embodiment of the present invention is the raw material injection unit 310, the heating means 320 and the cooling means 330 according to the rotational speed of the substrate 10 and the deposition thickness of the film The number of configurations, arrangement, width, etc. can be variously modified.

As described above, in the substrate processing apparatus including the raw material supply device 300 according to an embodiment of the present invention, the raw material supply device 300 includes a plurality of raw material injection parts 310 and at least two raw material materials. At least one heating means 320 and cooling means 330 are provided between the yarns 310 to maintain the temperature of the substrate 10 at least two process temperatures. A semiconductor device, for example, a light emitting diode may be manufactured by using the raw material supply device 300 according to an exemplary embodiment of the present invention.

First, as shown in FIG. 11, a buffer layer 20, an n-type semiconductor layer 30, an active layer 40, and a p-type semiconductor layer 50 are stacked and formed on a substrate 10 as shown in FIG. 11. A portion of the semiconductor layer 50 and the active layer 40 are etched to form a first electrode 60 on the exposed n-type semiconductor layer 30, and a second electrode 70 on the p-type semiconductor layer 50. ) Can be implemented by forming. The buffer layer 20 may be formed using GaN or AlN, and the n-type semiconductor layer 30 may include nitrides such as n-type impurities such as GaN, InN, and AlN (Group III-V) doped with silicon. It is available. In addition, the active layer 40 may be formed by stacking GaN and InGaN at least once, and the p-type semiconductor layer 50 may be formed of p-type impurities such as GaN or InGaN doped with magnesium. The GaN layer and the InGaN layer may be formed by stacking the GaN layer and the InGaN layer at least once using the substrate processing apparatus including the raw material supply device 300 according to an embodiment of the present invention. The raw material supply device 300 and the flowchart of FIG. 12 will be described below. Here, the InGaN layer may be deposited at a first process temperature, and the GaN layer may be deposited at a second process temperature that is different from the first process temperature. In this embodiment, the InGaN layer may be, for example, a first process temperature of about 760 ° C. And where the GaN layer is deposited at a second process temperature of, for example, about 820 ° C. above the first process temperature.

First, the substrate 10 is heated to a deposition temperature of the InGaN film, that is, a first process temperature of about 760 ° C. using the temperature adjusting means 220 provided in the substrate mounting plate 210 (S110).

Then, the heating means 320a of the raw material injection part 300 is heated to the deposition temperature of the GaN film, that is, the second process temperature of about 820 ° C. (S120). That is, before the Ga source and the nitrogen source are supplied through the first raw material injection part 310a, the first heating means 320a is driven and the substrate 10 is heated while rotating the substrate mounting plate 210. By 320 to a temperature of about 820 ° C.

Subsequently, a Ga source and a nitrogen source are supplied to the substrate 10 passing through the heating means 320a through the raw material injection unit 310a, thereby depositing a GaN film on the substrate 10 heated to about 820 ° C. (S130). Since the temperature of the substrate 10 may decrease during the GaN film deposition, another heating means 320 may be provided on the raw material injection part 310 side.

After depositing the GaN film on the substrate 10, in order to deposit the InGaN film, the temperature of the substrate 10 on which the GaN film is deposited must be lowered to about 760 ° C. To this end, the temperature of the substrate 10 is lowered to about 760 ° C, which is the deposition temperature of the InGaN film, by using the cooling means 330a provided on the raw material injection part 310a side for depositing the GaN film (S140).

Subsequently, a Ga source, an In source, and a nitrogen source are supplied through the raw material injection unit 310b adjacent to the cooling means 330a to deposit an InGaN film on the substrate 10 (S150). That is, an InGaN film is deposited on the GaN film. In this case, in order to maintain the deposition temperature of the InGaN film, another cooling means 330 may be provided on the side of the raw material injection unit 310 supplying the Ga source, the In source, and the nitrogen source.

In the above-described steps, the number of rotations of the substrate 10 may be adjusted according to the number of stacked GaN and InGaN layers to form the active layer 40 of the plurality of stacked light emitting diodes of the GaN and InGaN layers.

On the other hand, the embodiment has been described in order to drive the raw material supply device 300 in the rotational direction of the substrate 10 on the substrate mounting plate 210, the raw material supply device 300 while the substrate 10 is rotated The raw material injection unit 310, the heating means 320 and the cooling means 330 may be driven at the same time.

In addition, the above-described embodiment of the present invention using the flowchart of FIG. 12 has been described in the case where the GaN layer and the InGaN layer of the light emitting diode are applied to the process of forming the active layer. It is also applicable to the formation process of the buffer layer 20, the n-type semiconductor layer 30, the active layer 40, and the p-type semiconductor layer 50 shown. Here, the layers of the light emitting diodes may be deposited in different processes, or two or more may be deposited at the same temperature, using the temperature control means 220 to heat the substrate 10 to the basic process temperature, supply the raw material After the substrate 10 is adjusted to various process temperatures by using the heating means 320 and the cooling means 330 of the apparatus 300, a plurality of layers using the raw material supplied through the raw material spraying unit 310. You can also form them. For example, the buffer layer 20 is deposited at a temperature of 550 ° C, the n-type semiconductor layer 30 is deposited at a temperature of 1050 ° C, and the active layer 40 has a GaN layer of 820 ° C and an InGaN layer of 760 ° C. The p-type semiconductor layer 50 may be deposited at a temperature of 950 ° C. An example of manufacturing a light emitting diode using a substrate processing apparatus having a raw material supply device according to an embodiment of the present invention will be described with reference to the process flowchart of FIG. 13. Here, a case of using the raw material supply device shown in FIG. 8 will be described.

First, the substrate 10 is heated to a temperature of about 550 ° C. by using the temperature adjusting means 220 provided inside the substrate mounting plate 210 (S210).

Then, the Ga source and the N source are supplied through the raw material injection unit 310d to form the GaN buffer layer 20 on the substrate 10 (S220).

Subsequently, the temperature of the substrate 10 is heated to about 1050 ° C. by using the temperature adjusting means 220 and the heating means 320a (S230).

The Ga source, the Si source, and the N source are supplied through the raw material injection unit 310a to form a GaN layer doped with silicon as the n-type semiconductor layer 30 on the substrate 10 (S240).

Subsequently, the substrate 10 is cooled to about 760 ° C by using the temperature adjusting means 220 and the cooling means 330a (S250).

In addition, a Ga source, an In source, and a nitrogen source are supplied through the raw material injection unit 310b to deposit an InGaN film on the substrate 10 (S260).

Subsequently, the substrate 10 is heated to about 820 ° C using the heating means 320b (S270).

Then, the Ga source and the N source are supplied through the raw material injection unit 310c to form a GaN layer (S280).

Subsequently, the substrate 10 is cooled to about 760 ° C using the cooling means 330d (S290), and the steps S260 to S280 are repeated to form an active layer 40 in which a plurality of InGaN layers and GaN layers are stacked. .

Subsequently, the substrate 10 is heated to about 950 ° C. by using the temperature adjusting means 220 and the heating means 320a (S300).

The Ga source, the Mg source, and the N source are supplied through the raw material injection unit 310d to form a GaN layer doped with Mg as the p-type semiconductor layer 50 on the substrate 10 (S310).

In the above embodiment, the driving of the raw material supply device 300 is sequentially described in the rotational direction of the substrate 10 on the substrate mounting plate 210, but the raw material of the raw material supply device 300 is rotated while the substrate 10 rotates. The material injection unit 310, the heating means 320 and the cooling means 330 may be driven at the same time.

On the other hand, the raw material supply apparatus according to an embodiment of the present invention can be manufactured to combine and detach the raw material injection unit 310, the heating means 320 and the cooling means 330. For example, as shown in FIG. 14, a plurality of central portions 305 provided in the lower center portion of the chamber lid 120 and lower portions of the chamber lid 120 in contact with the side surface of the central portion 320 are coupled and separated. And a heating means 320 and a cooling means 330 provided between the raw material injection part 310 and the plurality of raw material injection parts 310. That is, in the raw material supply device 300 according to another embodiment of the present invention, the central portion 305 is provided at the lower center portion of the chamber lid 120, and the plurality of raw material injection portions 310 are in contact with the central portion 305. ) Is coupled to the lower side of the chamber lid 120, at least one heating means 320 and cooling means 330 may be coupled between the raw material injection portion 310.

In order to enable the coupling and separation of the raw material supply device 300, as illustrated in FIG. 14, the plurality of raw material injection parts 310 may be provided with protrusions 314 in the longitudinal direction on both sides thereof. In addition, grooves 321 and 331 may be provided in the longitudinal direction of the heating means 320 and the cooling means 330. Thus, the heating means 320 and the cooling means 330 are inserted into the grooves 321 and 331 on both sides, and the projection 314 of the raw material injection portion 310 is inserted as shown in FIG. The heating means 320 and the cooling means 330 may be coupled between the injection parts 310. Meanwhile, at least one of the cooling means 330 may be provided with a temperature measuring unit 333 to measure the temperature inside the chamber 100. The temperature measuring unit 333 may be provided on a lower surface of the cooling unit 330, and a region of the cooling unit 330 may be recessed and embedded in the recessed region.

As described above, the plurality of raw material supply devices 310 may be provided to be separated and combined, thereby making it easier to manufacture the raw material supply device 300 which is enlarged according to the enlargement of the chamber 100.

16 is a schematic cross-sectional view of a substrate processing apparatus including a raw material supply device according to another embodiment of the present invention, and FIGS. 17 and 18 are schematic plan views and perspective views of a raw material supply device according to another embodiment of the present invention. . Other embodiments of the present invention will be described with the omission of the content overlapping with the above-described embodiment of the present invention.

16, 17, and 18, a substrate processing apparatus according to another embodiment of the present invention may include a chamber 100 having a reaction space and a substrate 10 positioned in a reaction space of the chamber 100. And a raw material supply device 300 for supplying different raw materials to the reaction space of the chamber 100. In addition, the raw material supply device 300 includes a raw material injection unit 310, a heating means 320 and cooling means 330, and an auxiliary exhaust port 340. That is, another embodiment of the present invention is different from the auxiliary exhaust port 340 is provided in comparison with an embodiment of the present invention.

The raw material supply device 300 may be provided between a plurality of raw material injection parts 310 for injecting a plurality of raw materials and at least two raw material injection parts 310 to adjust the substrate 10 to a second process temperature. And heating means 320 and cooling means 330 provided between the at least two raw material injection parts 310 to lower the temperature of the substrate 10 to maintain the second process temperature to the first process temperature. The apparatus further includes an auxiliary exhaust port 340 provided in the center region of the raw material supply device 300. That is, as shown in FIGS. 17 and 18, in the raw material supply apparatus 300 according to another exemplary embodiment, a central portion 305 is provided in a central region, and each of the plurality of raw material injection units 310 is provided. At least one heating means 320 and one side of the cooling means 330 may be coupled to contact the outer circumferential surface of the central portion 305. In addition, an auxiliary exhaust port 340 penetrating through the center portion is formed in the central portion 305, and the auxiliary exhaust port 340 is connected to the auxiliary exhaust means 500 such as a pump through the exhaust pipe 350. In addition, the exhaust pipe 350 between the auxiliary exhaust port 340 and the auxiliary exhaust means 500 may be further provided with a cooling collecting device 510 and a valve 520.

As described above, by providing the auxiliary exhaust port 340 in the raw material supply device 300, the deposition uniformity of the thin film deposited on the substrate 10 may be improved. That is, at least one exhaust port 130, for example, eight exhaust ports 130 are provided in at least one region of the chamber body 110 and connected to the exhaust means (not shown), and the raw material is supplied by the exhaust of the exhaust means. The raw material injected downward from the device 300 flows outward from the center of the substrate mounting plate 210. Therefore, the thin film deposited on the substrate 10 positioned in the center region is thinner than the thin film deposited on the substrate 10 positioned outside the substrate mounting plate 210. That is, the deposition uniformity of the thin film decreases depending on the position of the substrate 10. In order to solve this problem, the auxiliary exhaust port 340 is installed in the central region of the raw material supply device 300 and exhausted using the auxiliary exhaust means 500 to naturally lead the supply path of the raw material to the inside and the outside, and the raw material. The same amount is distributed over the entire surface of the substrate. Therefore, it is possible to improve the deposition uniformity of the thin film deposited on the substrate 10 disposed in the central region and the outer region of the substrate mounting plate 210. At this time, the exhaust inside the chamber 100 is mainly made through the exhaust port 130 provided below the chamber 100, and the auxiliary exhaust port 340 provided in the raw material supply device 300 increases the residence time of the raw material. Since the main function is the exhaust pressure of the auxiliary exhaust means 500 may be lower than the exhaust pressure of the exhaust means. In addition, the deposition rate and deposition rate of the thin film deposited on the substrate 10 may be adjusted by adjusting the exhaust pressure of the auxiliary exhaust means 500.

In addition, since the cooling collecting device 510 is provided, the raw material in the chamber 100 may be cooled, and particles included in the gaseous raw material may be collected. That is, in the chamber 100, the raw material is deposited at a high temperature, and at this time, the unreacted raw material also maintains a high temperature, which may include particles and the like. Thus, the cold collecting device 510 cools the unreacted raw material and collects the particles contained in the raw material. In addition, since the valve 520 is further provided in the exhaust pipe 350 between the cooling collecting device 510 and the auxiliary exhaust means 500, the exhaust pressure may also be adjusted by the valve 520. That is, not only the exhaust pressure may be adjusted by the auxiliary exhaust means 500, but also the exhaust pressure may be adjusted using the valve 520. By the way, by using the valve 520 it is possible to adjust the exhaust pressure more finely, for example, by using the valve 520 according to the deposition rate can be more finely adjusted the exhaust pressure.

On the other hand, the raw material supply device 300 according to another embodiment of the present invention also the raw material injection unit 310, the heating means 320 and the cooling means 330 according to the rotational speed of the substrate 10 and the deposition thickness of the film The configuration number, arrangement method and width of the can be variously modified, and can also be configured to be separated and combined.

The present invention is not limited to the above-described embodiments, but may be implemented in various forms. That is, the above embodiments are provided to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the present invention, and the scope of the present invention should be understood by the claims of the present application. .

100: chamber 200: substrate mounting portion
300: raw material supply device 310: raw material injection unit
320: heating means 330: cooling means
340: secondary exhaust port 400: raw material storage unit
500: auxiliary exhaust means

Claims (15)

At least two raw material spraying portions for spraying at least two or more raw materials onto the substrate;
At least one heating means provided between the at least two raw material injection parts; And
And at least one cooling means spaced apart from said heating means and provided between said at least two raw material injection parts.
The method of claim 1, wherein the raw material injection portion,
A plurality of jets including jet nozzles extending from the internal spaces and the internal spaces provided with different raw materials,
It is provided with a refrigerant moving space, the cooling unit including a plurality of injection grooves penetrating the moving space,
The plurality of injection parts and the cooling part are stacked,
Each of the injection grooves corresponding to the injection nozzles of the plurality of injection portions, respectively.
The raw material supply apparatus according to claim 1, wherein said at least one heating means and cooling means are disposed adjacent to each other or cross disposed between the at least one raw material injection portions.
4. The apparatus of claim 3, wherein the at least one heating means and the cooling means are the same or different in width.
The raw material supply apparatus according to claim 1, further comprising an auxiliary exhaust port provided in a central region of the raw material injection section, the heating means, and the cooling means.
6. The raw material supply apparatus according to claim 1 or 5, wherein the plurality of raw material injection parts, the at least one heating means and the cooling means are separable and combined.
The method of claim 6, wherein protrusions are formed on both sides of the at least two raw material injection parts, and grooves corresponding to the protrusions are formed on both sides of each of the at least one heating means and the cooling means so that the grooves are inserted into the protrusions. And the heating means and the cooling means are fastened between the raw material injection portions. The raw material supply apparatus according to claim 1, wherein at least one of the cooling means is provided with a temperature sensor underneath.
A chamber having a reaction space;
A substrate setter positioned in a reaction space of the chamber, in which a plurality of substrates are radially placed with respect to a center thereof; And
A raw material supply device provided in the reaction space of the chamber to face the substrate setter and supplying at least two or more raw materials and controlling the temperature of the substrate;
The raw material supply device includes a plurality of raw material injection unit for injecting at least two or more raw materials onto a substrate;
At least one heating means provided between the plurality of raw material injection portions; And
And at least one cooling means spaced apart from the heating means and provided between the plurality of raw material injection portions.
The substrate processing apparatus of claim 9, further comprising an exhaust port connected to an exhaust device at a lower side of the chamber, and the substrate setter further comprising temperature control means for adjusting a temperature of the substrate. The method of claim 10, wherein the temperature control means heats the substrate to a first process temperature, the heating means heats the substrate to a second process temperature higher than the first process temperature, and the cooling means is the substrate. To adjust a third process temperature between the first process temperature and the second process temperature.
12. The thin film according to claim 11, wherein the substrate seat rotates and the substrate placed in the substrate seat is heated or cooled while passing through the heating means and the cooling means, and a thin film is deposited on the substrate while passing through the raw material injection section. Substrate processing apparatus.
The substrate processing apparatus of claim 10, further comprising an auxiliary exhaust port provided in a central region of the raw material supply device and connected to the auxiliary exhaust device.
The substrate processing apparatus according to claim 13, wherein a valve is further provided between the auxiliary exhaust port and the auxiliary exhaust means, and the exhaust pressure is adjusted by the valve.
The substrate processing apparatus according to claim 14, further comprising a cooling collecting device for cooling the unreacted raw material gas in the chamber and collecting particles therein between the auxiliary exhaust port and the auxiliary exhaust means.

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