JP5015085B2 - Vapor growth equipment - Google Patents

Description

  The present invention relates to a vapor phase growth apparatus such as a vertical showerhead type MOCVD (Metal Organic Chemical Vapor Deposition).

Conventionally, in the manufacture of light emitting diodes and semiconductor lasers, organometallic gases such as trimethylgallium (TMG) or trimethylaluminum (TMA) and hydrogen such as ammonia (NH ₃ ), phosphine (PH ₃ ) or arsine (AsH ₃ ). An MOCVD (Metal Organic Chemical Vapor Deposition) method is used in which a compound gas is introduced into a growth chamber as a source gas that contributes to film formation to grow a compound semiconductor crystal.

  The MOCVD method is a method in which a compound semiconductor crystal is grown on a substrate by introducing the above-mentioned source gas into a growth chamber together with a carrier gas such as hydrogen and heating it to cause a gas phase reaction on a predetermined substrate. In the production of compound semiconductor crystals using MOCVD, there is always a high demand for how to secure the maximum yield and production capacity while reducing costs while improving the quality of growing compound semiconductor crystals. Has been.

  FIG. 12 shows a schematic configuration of an example of a conventional vertical shower head type MOCVD apparatus used in the MOCVD method.

  In this MOCVD apparatus, a gas pipe 103 for introducing a reaction gas and an inert gas from a gas supply source 102 to a growth chamber 111 inside the reaction furnace 101 is connected to the growth chamber 111 inside the reaction furnace 101. A shower plate 110 having a plurality of gas discharge holes for introducing a reaction gas and an inert gas into the growth chamber 111 is installed as a gas introduction part.

  In addition, a rotating shaft 112 that can be rotated by an actuator (not shown) is installed in the center of the lower portion of the growth chamber 111 of the reaction furnace 101, and a susceptor 108 is attached to the tip of the rotating shaft 112 so as to face the shower plate 110. ing. A heater 109 for heating the susceptor 108 is attached to the lower part of the susceptor 108.

  Further, a gas exhaust unit 104 for exhausting the gas in the growth chamber 111 inside the reaction furnace 101 to the outside is installed at the lower part of the reaction furnace 101. This gas exhaust unit 104 is connected via a purge line 105 to an exhaust gas treatment device 106 for rendering the exhausted gas harmless.

  When a compound semiconductor crystal is grown in the vertical showerhead type MOCVD apparatus having the above configuration, first, the substrate 107 is set on the susceptor 108, the susceptor 108 is rotated by the rotation of the rotating shaft 112, and the heater 109 is heated. The substrate 107 is heated to a predetermined temperature via the susceptor 108. Thereafter, a reactive gas and an inert gas are introduced into the growth chamber 111 inside the reaction furnace 101 from a plurality of gas discharge holes formed in the shower plate 110.

  As a method of forming a thin film by supplying a plurality of reaction gases and reacting them on the substrate 107, conventionally, a plurality of gases are mixed in a shower head, and the substrate is discharged from a gas discharge port provided in a large number in the shower plate 110. 107 was used to blow out the reaction gas.

  However, in this method, the surface of the shower plate 110 is heated by the radiant heat from the heater 109, so that the reactive gas reaches the substrate 107 and reacts to form a thin film before forming a thin film. Some chemical reaction proceeds on the surface. As a result, a product is formed on the surface of the shower plate 110, the gas discharge holes of the shower plate 110 are clogged with the product, and the source gas and the inert gas can reach the surface of the substrate 107 uniformly. As a result, a uniform thin film could not be formed.

  In order to solve this problem, for example, in the vapor phase growth apparatus 200 disclosed in Patent Document 1, as shown in FIG. 13, a coolant is introduced into the shower plate 201 excluding the gas passage portion, and the shower plate 201 Cooling is performed from the top and bottom and side surfaces of the gas passage portion in the interior to suppress the temperature rise of the shower plate 201 due to radiant heat. In addition, a refrigerant jacket 203 is disposed on the side wall 202, and a refrigerant is also introduced into the inside of the side wall 202. In addition, the temperature rise of the shower plate 201 and the temperature rise of the source gas are suppressed.

  Further, in recent years, a method in which a buffer area is provided for each of a plurality of supply gases and each reaction gas is supplied from the buffer area to the growth chamber in a separated state through the gas discharge holes of the shower plate is generally used. It is done. This is to avoid a gas phase reaction in the showerhead. In this case, since the group III gas discharge holes and the group V gas discharge holes are alternately arranged close to each other, for example, a group III gas such as a reaction vessel 300 disclosed in Patent Document 2 shown in FIG. The buffer area 301 and the V-group gas buffer area 302 are arranged in two layers above and below, and a laminated structure in which gas flow paths are separated so that the respective gases do not mix outside the growth chamber 303 is often used. Yes.

Also in the reaction vessel 300 disclosed in Patent Document 2, the cooling chamber 305 is provided on the upper surface of the shower plate 304, the refrigerant is introduced through the gallery 306, the shower plate 304 is cooled, and the temperature of the shower plate 304 is increased. And the temperature rise of source gas is suppressed.
JP 2006-216830 A (released on August 17, 2006) JP-A-8-91989 (published on April 9, 1996)

  By the way, in order to grow a thin film having a uniform film thickness distribution on a substrate with good reproducibility, it is necessary for the reaction gas to reach the upper part of the substrate to be processed with a uniform temperature distribution, and the reaction gas can flow in a uniform flow. It is necessary to cause a phase reaction.

  However, in the vapor phase growth apparatus 200 shown in FIG. 13 disclosed in the conventional Patent Document 1, the refrigerant outer ring chamber having the refrigerant supply port 204 and the refrigerant discharge port 205 is not structured by a partition wall. The flow from the refrigerant supply port 204 to the refrigerant discharge port 205 is not defined, and it becomes difficult to supply the refrigerant to the entire area of the shower plate 201, and the shower plate 201 cannot be uniformly cooled. As a result, there arises a problem that the gas discharge holes are clogged due to the reaction of the raw material gas due to partial cooling shortage. Further, since the temperature of the source gas passing through the inside of the shower plate 201 becomes non-uniform and the temperature of the source gas reaching above the substrate 206 becomes non-uniform, there arises a problem that the film thickness distribution is not uniform.

  Further, in Patent Document 2 shown in FIG. 14, since the cooling chamber 305 is provided above the shower plate 304 and the shower plate 304 is directly cooled, the temperature uniformity of the shower plate 304 compared to Patent Document 1 is improved. Will improve.

  However, even Patent Document 2 does not have a structure in which the cooling unit is partitioned, so that temperature uniformity over the entire area of the shower plate 304 cannot be obtained. Furthermore, when the shower plate 304 becomes larger, the problem of non-uniformity of the temperature of the shower plate 304 occurs more significantly, and the problem of non-uniform temperature of the reaction gas passing through the inside of the shower plate 304 occurs. This is because the larger the size of the shower plate 304, the greater the amount of heat taken by the refrigerant, which cannot be sufficiently cooled, and the refrigerant is warmed before reaching the discharge section.

  Further, since the cooling chamber 305 is disposed on the upper portion of the shower plate 304, a distance is generated between the upper surface and the lower surface of the shower plate 304, and the cooling capacity is not sufficiently exhibited. The problem of clogging of the discharge holes occurs. This is also a problem that occurs partially due to the non-uniform temperature described above.

  The present invention has been made in view of the above-mentioned conventional problems, and the object thereof is to uniformly cool the shower plate by allowing the refrigerant to flow over the entire area of the shower plate, and to provide a gas shower plate. Another object of the present invention is to provide a vapor phase growth apparatus capable of avoiding clogging of gas discharge holes in a shower plate due to the above reaction.

  In order to solve the above problems, the vapor phase growth apparatus of the present invention supplies the gas into a growth chamber containing a deposition target substrate through a shower plate provided with a plurality of gas discharge holes for discharging the gas. In the vapor phase growth apparatus for forming a film on the deposition target substrate, a gas intermediate chamber for filling the gas on the shower plate and a refrigerant intermediate chamber for charging a refrigerant for cooling the gas are the refrigerant intermediate chamber. The refrigerant intermediate chamber is provided with a plurality of gas supply pipes penetrating from the gas intermediate chamber to the gas discharge holes of the shower plate. An annular refrigerant outer ring chamber is provided around the ring through a ring-shaped wall, and the refrigerant outer ring chamber is opposed to a refrigerant inflow opening formed in the ring-shaped wall to the refrigerant intermediate chamber. From the introduction A refrigerant outer ring introduction chamber into which a medium is introduced and a refrigerant discharge port provided at a position facing the refrigerant introduction port and facing a refrigerant outflow opening formed in the ring-shaped wall from the refrigerant intermediate chamber A refrigerant outer ring discharge chamber, and a partition that partitions the refrigerant outer ring introduction chamber and the refrigerant outer ring discharge chamber, and a part of the partition includes a refrigerant outer ring introduction chamber and a refrigerant. A partition wall communication opening that communicates with the outer ring discharge chamber is provided.

  According to the above invention, the gas intermediate chamber for filling the gas and the refrigerant intermediate chamber for charging the refrigerant for cooling the gas are sequentially stacked on the shower plate with the refrigerant intermediate chamber facing the shower plate. The refrigerant intermediate chamber is provided with a plurality of gas supply pipes penetrating from the gas intermediate chamber to a plurality of gas discharge holes of the shower plate, and a ring-shaped wall is provided around the refrigerant intermediate chamber. An annular refrigerant outer ring chamber is provided.

  Therefore, a part of the refrigerant introduced from the refrigerant introduction port into the annular refrigerant outer ring chamber provided around the refrigerant intermediate chamber flows into the refrigerant intermediate chamber through the refrigerant inflow opening formed in the ring-shaped wall. The other part flows into the annular refrigerant outer ring chamber.

  However, since the refrigerant intermediate chamber is provided with a plurality of gas supply pipes, the refrigerant intermediate chamber has a large refrigerant inflow resistance. For this reason, most of the refrigerant introduced into the refrigerant outer ring chamber is discharged to the outside through the refrigerant outer ring chamber having a low resistance. As a result, most of the refrigerant introduced into the refrigerant outer ring chamber flows short-circuited without sufficiently flowing into the refrigerant intermediate chamber having a large resistance, so that the shower plate cannot be uniformly cooled. .

  Therefore, in the present invention, in order to avoid this, the refrigerant outer ring chamber is a refrigerant in which the refrigerant is introduced from the refrigerant introduction port facing the refrigerant inflow opening formed in the ring-shaped wall to the refrigerant intermediate chamber. Outside the refrigerant, the refrigerant is discharged from the refrigerant discharge port provided at the position opposite to the outer ring introduction chamber and the refrigerant introduction port, and facing the refrigerant outflow opening formed in the ring-shaped wall from the refrigerant intermediate chamber. A ring discharge chamber, and a partition that partitions the refrigerant outer ring introduction chamber and the refrigerant outer ring discharge chamber, and a refrigerant outer ring introduction chamber and a refrigerant outer ring discharge chamber are provided in part of the partition. A partition wall communication opening that communicates is provided.

  That is, the refrigerant does not flow into the refrigerant outer ring chamber only by providing the partition wall that partitions the refrigerant outer ring introduction chamber and the refrigerant outer ring discharge chamber.

  In this regard, in the present invention, a partition wall communication opening that connects the refrigerant outer ring introduction chamber and the refrigerant outer ring discharge chamber is provided in a part of the partition wall. On the contrary, the refrigerant outer ring chamber is provided with the partition communication opening only in a part of the partition wall, and therefore, the refrigerant flow passage is narrowed in the partition communication opening, and the refrigerant circulation amount is reduced. For this reason, it can be prevented that most of the refrigerant introduced into the refrigerant outer ring chamber does not sufficiently flow into the refrigerant intermediate chamber having a large resistance and flows in a short circuit. Further, by allowing the refrigerant to partially flow in the refrigerant outer ring chamber, the refrigerant flows from the refrigerant inflow opening of the ring-shaped wall to the refrigerant intermediate chamber to the vicinity of the outer periphery of the refrigerant intermediate chamber.

  Therefore, by allowing the coolant to flow over the entire area of the shower plate, the shower plate can be uniformly cooled, and the gas discharge hole in the shower plate due to the reaction of the gas in the shower plate can be avoided. Can be provided.

  In the vapor phase growth apparatus of the present invention, the ring-shaped wall of the refrigerant outer ring chamber is provided with a protrusion that protrudes toward the refrigerant intermediate chamber in the vicinity of the partition, and is provided in the protrusion and the refrigerant intermediate chamber. The interval between the gas supply pipes is preferably narrower than the interval between the gas supply pipes.

  That is, the refrigerant that has flowed into the refrigerant intermediate chamber passes through a plurality of gas supply pipes provided in the refrigerant intermediate chamber and flows in the direction of the refrigerant outflow opening formed in the ring-shaped wall. In this case, when the gap between the surface of the ring-shaped wall on the refrigerant intermediate chamber side and the gas supply pipe is wider than the gap between the gas supply pipes, the refrigerant has a low resistance on the surface of the ring-shaped wall on the refrigerant intermediate chamber side. Therefore, the amount of circulation between the gas supply pipes is reduced.

  Therefore, in the present invention, the ring-shaped wall of the refrigerant outer ring chamber is provided with a protrusion that protrudes toward the refrigerant intermediate chamber in the vicinity of the partition wall, and the interval between the protrusion and the gas supply pipe provided in the refrigerant intermediate chamber. Is made narrower than the interval between the gas supply pipes.

  As a result, the refrigerant does not flow so much in the basin along the surface of the ring-shaped wall having a large resistance on the refrigerant intermediate chamber side.

  Therefore, by allowing the coolant to flow over the entire area of the shower plate, the shower plate can be uniformly cooled, and the gas discharge holes in the shower plate due to the reaction of the gas in the shower plate can be reliably avoided. A growth apparatus can be provided.

  In the vapor phase growth apparatus of the present invention, it is preferable that the protruding portion protrudes toward the refrigerant intermediate chamber so as to form a string in the ring-shaped wall.

  Thereby, the space | interval of the gas supply pipe provided in the protrusion part and the refrigerant | coolant intermediate | middle chamber can be made narrower than the space | interval of gas supply pipe | tubes in a long area.

  Therefore, it is possible to prevent the refrigerant from flowing in a short circuit around the periphery by causing almost no refrigerant to flow in the flow area along the surface of the ring-shaped wall having a large resistance on the refrigerant intermediate chamber side.

  In the vapor phase growth apparatus of the present invention, the partition communication opening formed in the partition wall has a taper whose opening width increases from the refrigerant outer ring introduction chamber toward the refrigerant outer ring discharge chamber, or the refrigerant from the refrigerant outer ring introduction chamber. It is preferable that a taper that narrows the opening width toward the outer ring discharge chamber is formed.

  As a result, since the taper is formed in the partition communication opening formed in the partition wall, it is possible to reduce the portion where there is no flow velocity in the vicinity of the entrance / exit of the partition communication opening formed in the partition wall. The flowability of the refrigerant can be improved. The taper of the partition communication opening is a taper in which the opening width increases from the refrigerant outer ring introduction chamber toward the refrigerant outer ring discharge chamber, or the opening width decreases from the refrigerant outer ring introduction chamber toward the refrigerant outer ring discharge chamber. It has been confirmed by simulation that the flowability of the refrigerant at the partition communication opening is improved regardless of the taper.

  In the vapor phase growth apparatus of the present invention, the partition communication openings formed in the partition may be formed at a plurality of locations.

  It has been confirmed by simulation that the portion where there is no flow velocity in the vicinity of the entrance / exit of the partition wall communication opening can be greatly reduced.

  In the vapor phase growth apparatus of the present invention, it is preferable that the refrigerant introduction port for introducing the refrigerant into the refrigerant outer ring introduction chamber is formed such that the inlet area increases as the refrigerant outer ring introduction chamber is approached. .

  As a result, in the vicinity of the refrigerant inlet of the refrigerant outer ring chamber, the flow of the medium is hindered by turbulent flow between the refrigerant flow to the refrigerant intermediate chamber and the refrigerant flow to the refrigerant outer ring introduction chamber. Can be prevented.

  In the vapor phase growth apparatus of the present invention, as described above, the gas intermediate chamber for filling the gas on the shower plate and the refrigerant intermediate chamber for charging the refrigerant for cooling the gas are used to shower the refrigerant intermediate chamber. A plurality of gas supply pipes communicating from the gas intermediate chamber to a plurality of gas discharge holes of the shower plate are provided through the refrigerant intermediate chamber in order to be stacked on the plate side. Is provided with an annular refrigerant outer ring chamber via a ring-shaped wall, and the refrigerant outer ring chamber faces a refrigerant inflow opening formed in the ring-shaped wall to the refrigerant intermediate chamber. A refrigerant outer ring introduction chamber from which refrigerant is introduced from a refrigerant discharge port provided at a position opposite to the refrigerant introduction port and opposed to a refrigerant outflow opening formed in the ring-shaped wall from the refrigerant intermediate chamber. Refrigerant is discharged A medium outer ring discharge chamber, and a partition that partitions the refrigerant outer ring introduction chamber and the refrigerant outer ring discharge chamber, and a refrigerant outer ring introduction chamber and a refrigerant outer ring discharge chamber are provided in part of the partition Is provided with a partition wall communication opening.

  Therefore, by allowing the refrigerant to flow over the entire area of the shower plate, the shower plate can be cooled uniformly, and gas phase growth that can prevent clogging of the gas discharge holes in the shower plate due to the reaction of the gas in the shower plate can be avoided. There exists an effect that an apparatus can be provided.

  An embodiment of the present invention will be described with reference to FIGS. 1 to 11 as follows. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.

  FIG. 2 shows an example of a schematic configuration of a vertical showerhead type MOCVD apparatus 10 which is an example of an MOCVD (Metal Organic Chemical Vapor Deposition) apparatus as a vapor phase growth apparatus of the present invention. .

  As shown in FIG. 2, the MOCVD apparatus 10 of the present embodiment has a reaction furnace 2 having a growth chamber 1 that is a hollow portion, a susceptor 4 on which a deposition target substrate 3 is placed, and the susceptor 4. And a shower head 20 as a gas supply means having a shower plate 21 on the bottom surface.

  A heater 5 and a support base 6 for heating the deposition substrate 3 are provided below the susceptor 4, and a rotating shaft 7 attached to the support base 6 is rotated by an actuator or the like (not shown). 4 and the heater 5 are configured to rotate while maintaining a state in which the upper surface of the susceptor 4 (the surface on the shower plate 21 side) is parallel to the facing shower plate 21. A cover plate 8 serving as a heater cover is provided around the susceptor 4, the heater 5, the support base 6 and the rotary shaft 7 so as to surround the susceptor 4, the heater 5, the support base 6 and the rotary shaft 7. .

  Further, the MOCVD apparatus 10 includes a gas discharge unit 11 for discharging the gas inside the growth chamber 1 to the outside through the peripheral gas discharge port 1a, a purge line 12 connected to the gas discharge unit 11, and the purge And an exhaust gas treatment device 13 connected to the line 12. Thereby, the gas introduced into the inside of the growth chamber 1 is discharged to the outside of the growth chamber 1 through the gas discharge unit 11, and the discharged gas is introduced into the exhaust gas treatment device 13 through the purge line 12. 13 is detoxified.

  Furthermore, the MOCVD apparatus 10 includes a group III gas supply source 31 that is a source of a group III gas as a source gas containing a group III element, and a group III gas supplied from the group III gas supply source 31. A group III gas pipe 32 for supplying gas to the showerhead 20 and a group III gas supply amount adjusting unit capable of adjusting the supply amount of the group III gas supplied from the group III gas supply source 31. A mass flow controller 33. The group III gas supply source 31 is connected to the group III gas supply unit 23 of the shower head 20 via a mass flow controller 33 by a group III gas pipe 32.

  In this embodiment, examples of the group III element include Ga (gallium), Al (aluminum), and In (indium), and examples of the group III gas containing the group III element include trimethylgallium. One or more organic metal gases such as (TMG) or trimethylaluminum (TMA) can be used.

  Further, the MOCVD apparatus 10 includes a V group gas supply source 34 serving as a supply source of a V group gas as a source gas containing a V group element, and a V group gas supplied from the V group gas supply source 34. A group V gas supply amount adjusting unit capable of adjusting the amount of group V gas supplied from the group V gas supply source 34 and the group V gas supply source 34 A mass flow controller 36. The group V gas supply source 34 is connected to the group V gas supply unit 24 of the shower head 20 through a mass flow controller 36 by a group V gas pipe 35.

In this embodiment, examples of the group V element include N (nitrogen), P (phosphorus), and As (arsenic), and examples of the group V gas including the group V element include ammonia ( One or more of hydrogen compound gases such as NH ₃ ), phosphine (PH ₃ ), or arsine (AsH ₃ ) can be used.

  The mass flow controllers 33 and 36 are controlled by a control unit (not shown).

  In the present embodiment, a refrigerant supply unit 22 is provided between the group III gas supply unit 23 and the shower plate 21, and the refrigerant supply unit 22 has a cooling mechanism for cooling the shower plate 21. The refrigerant is supplied from the refrigerant device 37 through the refrigerant supply pipe 38. The refrigerant is discharged to a discharge utility (not shown) through the refrigerant discharge pipe 39 after cooling the shower plate 21.

  For example, general water can be used as the refrigerant, but it is not necessarily limited to water, and other liquid and gas refrigerants can be used.

  Next, the structure of the shower head 20 is demonstrated using FIG.

  As shown in FIG. 3, the shower head 20 is configured by laminating a shower plate 21, a refrigerant supply unit 22, a group III gas supply unit 23, and a group V gas supply unit 24 in order from the bottom. .

  Since the shower plate 21, the refrigerant supply unit 22, the group III group gas supply unit 23, and the group V group gas supply unit 24 are stacked, in this embodiment, the gas intermediate chamber in the group V group gas supply unit 24 is used. The group V gas in the group V gas buffer area 24b serving as the gas individual intermediate chamber passes through the group III gas buffer area 23b serving as the gas intermediate chamber and the gas individual intermediate chamber, and the refrigerant buffer area 22b serving as the refrigerant intermediate chamber. The gas is supplied to the growth chamber 1 from a V group gas discharge hole H5 as a gas discharge hole of the shower plate 21 through a gas supply pipe provided through and a V group gas supply pipe 24c as an individual gas supply pipe.

  The group III gas in the group III gas buffer area 23b in the group III gas supply unit 23 is a gas supply pipe provided through the refrigerant buffer area 22b and a group III gas supply as an individual gas supply pipe. The gas is discharged from the group III gas discharge hole H3 as the gas discharge hole of the shower plate 21 to the growth chamber 1 through the tube 23c.

  Hereinafter, each will be described in detail.

  As shown in FIG. 3, the shower plate 21 is supplied with a group III gas discharge hole H3 as a gas discharge hole for supplying a group III gas to the growth chamber 1 and a group V gas. A plurality of group V gas discharge holes H5 are formed as gas discharge holes. In the plane of the shower plate 21 (in the surface facing the susceptor 4), the group III gas discharge holes H3 and the group V gas discharge holes H5 are alternately arranged. In the example shown in FIG. 1, the arrangement directions of the group III gas discharge holes H3 and the group V gas discharge holes H5 are a horizontal direction and a vertical direction. That is, it has a lattice shape. However, this lattice is not limited to a square lattice, and may be a diamond lattice. Further, in the shower plate 21 having the configuration shown in FIG. 1, the area of the opening of the group III gas discharge hole H3 (indicated as the group III gas supply pipe 23c in FIG. 1) and the group V gas discharge hole H5 (FIG. In FIG. 1, the area of the opening of the group V gas supply pipe 24c is the same.

  Next, each gas supply part is demonstrated.

  As shown in FIG. 3, the group III-based gas supply unit 23 uniformly introduces the group III-based gas supplied from, for example, the peripheral portion of the shower head 20 to the group III-based gas discharge hole H3. The annular flow path 23a, a group III gas buffer area 23b, and a group III gas supply pipe 23c communicating from the group III gas buffer area 23b to the growth chamber 1 are configured. The cross section of the group III gas supply pipe 23c is not necessarily limited to a circular shape, and may be a square pipe, an elliptical pipe, or other cross sections.

  On the other hand, similarly, the group V gas supply unit 24 uniformly guides the reaction gas supplied from the peripheral part of the shower head 20 to the group V gas discharge hole H5. The outer ring passage 24a, the group V gas buffer area 24b, and the group V gas supply pipe 24c are configured. Note that the cross section of the group V gas supply pipe 24c is not necessarily limited to a circular shape, and may be a square tube, an elliptic tube, or other cross sections.

  Here, FIG. 4 is a perspective view showing the group V gas outer ring flow path 24a (the structure of the group III gas outer ring flow path 23a is the same, and the description thereof is omitted).

  For example, the V group gas supplied from the lateral direction of the V group gas outer ring passage 24a is an inner wall with an opening having a plurality of openings H that are evenly arranged on the inner peripheral side of the V group gas outer ring passage 24a. Are supplied to the V group gas buffer area 24b uniformly in the radial direction through the ring 24d with a V group gas opening. The V group gas in the V group gas buffer area 24b is supplied to the growth chamber 1 from the V group gas discharge hole H5 through the plurality of V group gas supply pipes 24c.

  That is, as shown in FIG. 3, a group V gas supply pipe 24c is arranged in the group III gas buffer area 23b so as not to mix the respective gases. In other words, in the plane of the group III gas buffer area 23b, the group III gas supply hole communicated from the group III gas buffer area 23b to the group III gas discharge hole H3 at the position of the group III gas discharge hole H3. A pipe 23c is disposed, and a group V gas supply pipe 24c communicating from the group V gas buffer area 24b to the group V gas discharge hole H5 is provided at the position of the group V gas discharge hole H5. It will be so forested.

  Next, the refrigerant supply unit 22 will be described with reference to FIGS.

  The refrigerant supply unit 22 suppresses adhesion of reaction products to the shower plate 21 by cooling the shower plate 21 shown in FIG. 2 to a certain temperature or lower, and the group III gas discharge holes H3 and the group V system are suppressed. The clogging of the gas discharge hole H5 is prevented.

  By the way, about this refrigerant | coolant supply part, the refrigerant | coolant is introduce | transduced in the cooling chamber 305 via the gallery 306 in the reaction container 300 of the conventional patent document 3 shown in FIG. For this reason, the flow of the refrigerant in the cooling chamber 305 is poor, for example, the refrigerant flows as a shortcut, and as a result, the cooling capacity is not sufficiently exhibited, causing a problem of clogging of the gas discharge holes.

  Therefore, in the present embodiment, in order to solve such a problem, the refrigerant supply unit 22 of the shower head 20 is configured as shown in FIGS.

  That is, the shower head 20 includes an annular flange 25 constituting an outer frame, a shower plate 21 attached to the bottom surface of the flange 25, the refrigerant buffer area 22b, the III group gas buffer area 23b, and the V group system. In order to partition the gas buffer area 24b in the vertical direction, boundary plates 26a and 26b and a top plate 26c arranged in parallel with the shower plate 21 are provided.

  And between the said shower plate 21 and the boundary board 26a, it is for refrigerant | coolants as a ring-shaped wall for forming the refrigerant | coolant outer ring chamber 27 which makes a refrigerant | coolant flow in into the said refrigerant | coolant buffer area 22b in the inner side surface of the flange 25. A ring-shaped wall 22d is provided. Further, between the boundary plate 26a and the boundary plate 26b, a group III gas outer ring passage 23a for allowing a group III gas to flow into the group III gas buffer area 23b is formed on the inner side surface of the flange 25. A ring IIId with a group III gas opening is provided. Further, in order to form a V group gas outer ring passage 24a for allowing a V group gas to flow into the V group gas buffer area 24b between the boundary plate 26b and the top plate 26c on the inner side surface of the flange 25. A ring 24d with a group V gas opening is provided.

  A refrigerant is supplied to the refrigerant outer ring chamber 26 from a refrigerant inlet 38 a from a refrigerant supply pipe 38 provided at one end of the flange 25, and the refrigerant in the refrigerant outer ring chamber 26 is a refrigerant in the flange 25. The refrigerant is discharged from a refrigerant discharge port 39a (see FIG. 1) to a refrigerant discharge pipe 39 provided at a position facing the supply pipe 38 at 180 degrees.

  In the present embodiment, as shown in FIG. 6A, in particular, the refrigerant outer ring as a partition partitioning the annular refrigerant outer ring chamber 27 into a refrigerant outer ring introduction chamber 27a and a refrigerant outer ring discharge chamber 27b. The chamber partition walls 28 are provided at, for example, two places as a plurality of places. Specifically, the refrigerant outer ring chamber partition wall 28 is provided at a position of, for example, ± 90 degrees from the refrigerant supply pipe 38 in the refrigerant outer ring chamber 27. The position of ± 90 degrees is not necessarily limited to this. That is, the refrigerant outer ring chamber partition walls 28 and 28 may be provided so as to be symmetrical with respect to a straight line connecting the refrigerant supply pipe 38 and the refrigerant discharge pipe 39 in the refrigerant outer ring chamber 27.

  In the present embodiment, in particular, as shown in FIG. 6B, the refrigerant outer ring chamber partition wall 28 communicates with the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b. A partition wall communication opening 28a is provided.

  Further, as shown in FIG. 6A, the refrigerant ring-shaped wall 22d of the refrigerant outer ring chamber 27 is provided with a protrusion P that protrudes toward the refrigerant buffer area 22b in the vicinity of the refrigerant outer ring chamber partition wall 28. The distance D1 between the projecting portion P and the group III gas supply pipe 23c and the group V gas supply pipe 24c provided in the refrigerant buffer area 22b is set so that the group III gas supply pipe 23c and the group V gas supply pipe 24c are connected to each other. It is narrower than the interval D2. For this reason, the refrigerant does not flow so much in the flow area along the surface of the refrigerant ring-shaped wall 22d having a large resistance on the refrigerant buffer area 22b side. In the present invention, the protruding portion P is not necessarily provided.

  In the present embodiment, the protruding portion P particularly protrudes toward the refrigerant buffer area 22b so as to form a string in the refrigerant ring-shaped wall 22d. Thus, in the long section, the distance D1 between the protrusion P and the group III gas supply pipe 23c and the group V gas supply pipe 24c provided in the refrigerant buffer area 22b is set to the group III gas supply pipe 23c and group V. It is narrower than the distance D2 between the system gas supply pipes 24c.

  Therefore, the refrigerant is prevented from flowing in a short circuit around the periphery by causing almost no refrigerant to flow through the flow area along the surface on the refrigerant buffer area 22b side of the ring-shaped wall 22d for refrigerant having a large resistance.

  5 (a) and 5 (b), the flange 25, the shower plate 21, the boundary plates 26a and 26b and the top plate 26c, the refrigerant ring-shaped wall 22d, the ring with group III gas opening 23d and the group V gas opening. The attached ring 24d and the refrigerant outer ring chamber partition wall 28 are integrated by welding so that each refrigerant and each source gas do not leak. In addition, as a result, the refrigerant buffer area 22b, the group III gas buffer area 23b, and the group V gas buffer area 24b are independent rooms.

  A refrigerant flow path in the shower head 20 including the refrigerant outer ring chamber 27 having the above-described configuration will be described with reference to FIG. FIG. 1 shows a result of a simulation of a state in which the refrigerant flows through the refrigerant outer ring introduction chamber 27a in the refrigerant outer ring chamber 27 to the refrigerant buffer area 22b and the refrigerant outer ring discharge chamber 27b.

  The simulation conditions were implemented under the condition that the refrigerant was introduced from the refrigerant supply pipe 38 at a flow rate of 1 m / s. This condition is a value set from the conductance calculated from the surface area and the number of the group III-based gas supply pipe 23c and the group V-based gas supply pipe 24c penetrating the refrigerant buffer area 22b.

  The dimensions of the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b are an inner diameter Φ176 mm, an outer diameter Φ230 mm, and a height 5 mm. In addition, the refrigerant outer ring chamber partition walls 28 are arranged symmetrically at two locations, and are set so that the volumes of the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b have the same volume.

  Furthermore, a refrigerant inflow opening Hin as a refrigerant opening through which refrigerant flows from the refrigerant ring-shaped wall 22d which is a side wall of the refrigerant outer ring introduction chamber 27a, and a refrigerant outflow opening Hout as a refrigerant opening in the refrigerant outer ring discharge chamber 27b. As for the diameter and the arrangement, the refrigerant supply pipe 38 and the refrigerant discharge pipe 39 are arranged so as to be line-symmetric with respect to the direction perpendicular to the central axis. That is, the refrigerant inflow opening Hin and the refrigerant outflow opening Hout are provided at positions facing each other by 180 degrees in the refrigerant outer ring chamber partition wall 28.

  As a result, with respect to the flow of the refrigerant, as shown in FIG. 1, the refrigerant outer ring chamber partition wall 28 and a partition wall communication opening 28a are provided in a part of the refrigerant outer ring chamber partition wall 28 to provide the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring. It was found that the refrigerant was sufficiently supplied into the refrigerant buffer area 22b by passing through the discharge chamber 27b.

  That is, as a result of the simulation, with respect to the flow of the refrigerant, the refrigerant outer flow chamber partition wall 28 and the partition wall communication opening 28a are provided in a part of the refrigerant outer ring chamber partition wall 28, so It has been found that the flow direction component is substantially the same speed as the introduction speed and has a substantially uniform distribution inside the refrigerant buffer area 22b, so that the refrigerant uniformly cools the entire inside of the refrigerant buffer area 22b.

  Next, as a comparative example, FIG. 7 shows the result of simulation for the case where the refrigerant outer ring chamber partition wall 28 is not provided in the refrigerant outer ring chamber 27.

  From the simulation results shown in FIG. 7, it can be seen that almost no refrigerant is supplied to the central portion of the shower plate 21. That is, most of the refrigerant passes through the refrigerant outer ring chamber 27 as it is without passing through the refrigerant buffer area 22 b and flows to the refrigerant discharge pipe 39.

  From this result, in the comparative example, the group III-based gas supply pipe 23c or the group V-based gas supply pipe 24c is infinitely present in the refrigerant buffer area 22b. It can be seen that the refrigerant flows to the side with less resistance.

  Therefore, from this result, the refrigerant outer ring chamber partition walls 28 and 28 are provided in the refrigerant outer ring chamber 27, and the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b are partitioned by the refrigerant outer ring chamber partition wall 28, It has been found that it is effective to provide a partition communication opening 28 a in a part of the refrigerant outer ring chamber partition wall 28.

  In the present embodiment, in the refrigerant outer ring chamber 27, two refrigerant outer ring chamber partition walls 28 are provided on the left and right sides, so that one refrigerant outer ring introduction chamber 27a and one refrigerant outer ring discharge chamber 27b are provided. However, the present invention is not necessarily limited thereto, and for example, a plurality of refrigerant outer ring chamber partition walls 28 may be provided to increase each chamber.

  Finally, a method for producing a group III-V compound semiconductor by growing a group III-V compound semiconductor crystal by MOCVD using the MOCVD apparatus 10 of the present embodiment will be described with reference to FIG.

  That is, when a group III-V compound semiconductor crystal is grown by the MOCVD method using the MOCVD apparatus 10 of the present embodiment having the configuration shown in FIG. 2, first, a film formation substrate serving as a base on the susceptor 4 3 is installed. Thereafter, the surface of the film formation substrate 3 installed on the upper surface of the susceptor 4 is rotated while maintaining the state parallel to the shower plate 21 by the rotation of the rotating shaft 7, and is heated via the susceptor 4 by the heating of the heater 5. The film formation substrate 3 is heated to a predetermined temperature. Then, a group III gas is introduced into the growth chamber 1 from the group III gas discharge hole H3 formed in the shower plate 21 in a direction perpendicular to the surface of the deposition target substrate 3 and also into the shower plate 21. A V group gas is introduced into the growth chamber 1 from the formed V group gas discharge hole H5 in a direction perpendicular to the surface of the deposition target substrate 3.

  Thereby, a group III-V compound semiconductor crystal grows on the surface of the deposition target substrate 3. Here, the supply amount of the group III gas and the supply amount of the group V gas are controlled by the mass flow controllers 33 and 36 by a control unit (not shown), and each of the group III gas and the group V gas grows. It will be supplied to the chamber 1.

  The group III gas and the group V gas are supplied from the group III gas discharge holes H3 and the group V gas discharge holes H5 alternately arranged on the shower plate 21, respectively. The uneven distribution of the group III gas discharge holes H3 and the group V gas discharge holes H5 above the surface can be reduced.

  The group III gas and the group V gas are mixed to make the concentration distribution uniform, and coupled with the heating of the deposition substrate 3 by the heater 5, the gas phase reaction between the group III gas and the group V gas is performed. The process proceeds in the vicinity of the surface of the film formation substrate 3.

  Here, in the present embodiment, the refrigerant supply unit 22 is provided, and in the refrigerant supply unit 22, the refrigerant outer ring chamber partition walls 28 and 28 and the partition wall communication openings 28 a and 28 a are provided. Therefore, the refrigerant circulates efficiently in the refrigerant buffer area 22b. As a result, the group III gas in the group III gas supply pipe 23c penetrating the inside of the refrigerant buffer area 22b and the group V gas in the group V gas supply pipe 24c are sufficiently cooled. The gas does not react and precipitate in the group-based gas discharge hole H3 and the group-V gas discharge hole H5, and the group-III gas discharge hole H3 and the group-V gas discharge hole H5 are not clogged.

  Therefore, when the MOCVD apparatus 10 according to the present embodiment is used, the group III-based gas and V on the surface of the deposition target substrate 3 are compared with the case where the apparatuses described in the conventional patent documents 1 and 2 are used. The uniformity of the gas phase reaction with the group gas can be improved.

  That is, the temperature of the entire surface of the shower plate 21 and the temperature of the reaction gas are made uniform so that the shower plate 21 is uniformly cooled, and the group III gas is generated by the product adhesion at the surface of the shower plate 21 and the gas inlet. Disturbances in flow due to clogging of the discharge holes H3 and the V group gas discharge holes H5 can be eliminated. In addition, by making the temperature of the reaction gas uniform, the generated film thickness and the composition ratio can be improved.

  In the above description, the case where a group III gas or a group V gas is introduced has been described. However, in the present invention, a gas serving as an inert gas or a dopant source together with a group III gas and a group V gas, etc. May be supplied to the growth chamber 1.

  In the above description, the case where the group III gas discharge hole H3 and the group V gas discharge hole H5 are circular has been described. However, in the present invention, the group III gas discharge hole H3 and the group V gas are used. The shape of the discharge hole H5 is not particularly limited, and can be, for example, a polygonal shape or an elliptical shape.

  In the above description, the case where one deposition target substrate 3 is installed has been described. However, in the present invention, not only one deposition target substrate 3 but also a plurality of deposition target substrates 3 may be installed.

  Furthermore, in the present invention, it goes without saying that the shapes of the reaction furnace 2, the shower plate 21, and other members constituting the MOCVD apparatus 10 are not limited to the shapes shown in FIG. For example, in the above description, the group III-based gas buffer area 23b and the group V-based gas buffer area 24b are stacked as two different layers on the refrigerant buffer area 22b. However, the present invention is not limited to this.

  In the present invention, the type of source gas is not limited to a group III gas and a group V gas.

  As described above, the MOCVD apparatus 10 of the present embodiment is provided with a plurality of group III-based gas discharge holes H3 and group V-based gas discharge holes H5 for discharging source gases of group III-based gas and group V-based gas. The group III-based gas and the group V-based gas are supplied into the growth chamber 1 that accommodates the deposition target substrate 3 through the shower plate 21, and a film is formed on the deposition target substrate 3. On the shower plate 21, a group III gas buffer area 23b and a group V gas buffer area 24b filled with a group III gas and a group V gas, respectively, and a group III gas and a group V gas are cooled. A refrigerant buffer area 22b for filling the refrigerant is sequentially stacked with the refrigerant buffer area 22b facing the shower plate 21. The refrigerant buffer area 22b includes a plurality of Group III gases from the refrigerant buffer area 22b to the shower plate 21. A plurality of group III-based gas supply pipes 23c and group V-based gas supply pipes 24c communicating with the discharge holes H3 and the group V-based gas discharge holes H5 are provided so as to penetrate therethrough, and a refrigerant ring is provided around the refrigerant buffer area 22b. An annular refrigerant outer ring chamber 27 is provided via the wall 22d.

  Therefore, a part of the refrigerant introduced into the annular refrigerant outer ring chamber 27 provided around the refrigerant buffer area 22b enters the refrigerant buffer area 22b through the refrigerant inflow opening Hin formed in the refrigerant ring-shaped wall 22d. While flowing in, the other part flows into the annular refrigerant outer ring chamber 27.

  However, since the plurality of group III-based gas supply pipes 23c and the group V-based gas supply pipes 24c are provided through the refrigerant buffer area 22b, the refrigerant buffer area 22b has a large refrigerant inflow resistance. For this reason, most of the refrigerant introduced into the refrigerant outer ring chamber 27 is discharged to the outside through the refrigerant outer ring chamber 27 via the refrigerant outer ring chamber 27 having a low resistance. Accordingly, most of the refrigerant introduced into the refrigerant outer ring chamber 27 flows short-circuited without sufficiently flowing into the refrigerant buffer area 22b having a large resistance, and thus the shower plate 21 cannot be uniformly cooled. It will be.

  Therefore, in the present embodiment, in order to avoid this, the refrigerant outer ring chamber 27 has a refrigerant introduction port 38a facing the refrigerant inflow opening Hin formed in the refrigerant ring-shaped wall 22d to the refrigerant buffer area 22b. The refrigerant outer ring introduction chamber 27a into which refrigerant is introduced from the refrigerant and the refrigerant introduction opening 38a is opposed to the refrigerant outflow opening Hout formed in the refrigerant ring-shaped wall 22d from the refrigerant buffer area 22b. A refrigerant outer ring discharge chamber 27b through which the refrigerant is discharged from the refrigerant discharge port 39a, and a refrigerant outer ring chamber partition wall 28 that partitions the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b. A part of the refrigerant outer ring chamber partition wall 28 is provided with a partition wall communication opening 28a that connects the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b.

  That is, the refrigerant does not flow into the refrigerant outer ring chamber 27 only by providing the refrigerant outer ring chamber partition wall 28 that divides the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b.

  In this respect, in the present embodiment, a part of the refrigerant outer ring chamber partition wall 28 is provided with a partition wall communication opening 28a that connects the refrigerant outer ring introduction chamber 27a and the refrigerant outer ring discharge chamber 27b. On the contrary, the refrigerant outer ring chamber 27 is provided with the partition wall communication opening 28a only in a part of the refrigerant outer ring chamber partition wall 28. Therefore, the refrigerant flow passage is narrow in the partition wall communication opening 28a, and the refrigerant flow amount is reduced. Is reduced. For this reason, it can prevent that most of the refrigerant | coolants introduced into the refrigerant | coolant outer ring chamber 27 does not fully flow into refrigerant buffer area 22b with large resistance, but short-circuits and flows. Further, by allowing the refrigerant to partially flow in the refrigerant outer ring chamber 27, the refrigerant flow from the refrigerant inflow opening Hin of the refrigerant ring-shaped wall 22d to the refrigerant buffer area 22b is near the outer periphery of the refrigerant buffer area 22b. It begins to flow to.

  Therefore, by allowing the refrigerant to flow over the entire area of the shower plate 21, the shower plate 21 can be cooled uniformly, and clogging of the gas discharge holes in the shower plate 21 due to the reaction of the gas in the shower plate 21 can be avoided. The MOCVD apparatus 10 can be provided.

  By the way, the refrigerant that has flowed into the refrigerant buffer area 22b is formed in the refrigerant ring-shaped wall 22d through a space between the group III gas supply pipe 23c and the group V gas supply pipe 24c provided in the refrigerant buffer area 22b. It flows in the direction of the refrigerant outlet opening Hout. In this case, the distance between the surface of the refrigerant ring-shaped wall 22d on the side of the refrigerant buffer area 22b and the group III gas supply pipe 23c and the group V gas supply pipe 24c is determined by the group III gas supply pipe 23c and the group V gas. When the interval is larger than the interval between the supply pipes 24c, the refrigerant flows along the surface on the refrigerant buffer area 22b side of the low-resistance refrigerant ring-shaped wall 22d. The amount of circulation between the gas supply pipes 24c is reduced.

  Therefore, in the present embodiment, the refrigerant ring-shaped wall 22d of the refrigerant outer ring chamber 27 is provided with a protrusion P that protrudes toward the refrigerant buffer area 22b in the vicinity of the refrigerant outer ring chamber partition wall 28, and this protrusion P And the distance D1 between the group III-based gas supply pipe 23c and the group V-based gas supply pipe 24c provided in the refrigerant buffer area 22b from the distance D2 between the group III-based gas supply pipe 23c and the group V-based gas supply pipe 24c. Is also narrow.

  As a result, the refrigerant does not flow so much along the flow area along the surface of the refrigerant ring-shaped wall 22d having a large resistance on the refrigerant buffer area 22b side.

  Therefore, by allowing the coolant to flow over the entire area of the shower plate 21, the shower plate 21 is uniformly cooled, and the group III-based gas discharge holes H 3 and the group V in the shower plate 21 due to the reaction of the gas in the shower plate 21 are performed. It is possible to provide the MOCVD apparatus 10 that can surely avoid clogging of the system gas discharge hole H5.

  In the present embodiment, the protruding portion P protrudes toward the refrigerant buffer area 22b so as to form a string in the refrigerant ring-shaped wall 22d. Thus, in a long section, the refrigerant is prevented from flowing in a short circuit around the periphery by causing almost no refrigerant to flow in the flow area along the surface of the refrigerant ring-shaped wall 22d having a large resistance on the refrigerant buffer area 22b side. be able to.

  In addition, this invention is not limited to said embodiment, A various change is possible within the scope of the present invention.

  For example, in the above embodiment, the partition wall communication opening 28a formed in the refrigerant outer ring chamber partition wall 28 is an opening having a rectangular cross section, but is not necessarily limited thereto.

  For example, as shown in FIGS. 8A and 8B and FIGS. 9A and 9B, a trapezoidal taper in cross section can be formed in the partition wall communication opening 28a. That is, if the partition wall communication opening 28a is an opening having a rectangular cross section, there may be a portion where there is no flow velocity in the vicinity of the entrance / exit of the partition wall communication opening 28a. On the other hand, by forming a trapezoidal taper in the partition communication opening 28a, the portion where there is no flow velocity near the entrance / exit of the partition communication opening 28a formed in the refrigerant outer ring chamber partition wall 28 is reduced. It is possible to improve the flowability of the refrigerant in the partition wall communication opening 28a.

  8A and 8B, the taper of the partition wall communication opening 28a is such that the opening width increases from the refrigerant outer ring introduction chamber 27a toward the refrigerant outer ring discharge chamber 27b, or FIG. As shown in a) and (b), the flowability of the refrigerant in the partition wall communication opening 28a is good regardless of the taper in which the opening width increases from the refrigerant outer ring introduction chamber 27a toward the refrigerant outer ring discharge chamber 27b. This can be confirmed by the simulation results shown in FIGS. 8A and 8B and FIGS. 9A and 9B.

  Further, in the MOCVD apparatus 10 of the present embodiment, as shown in FIGS. 10A and 10B, the partition wall communication openings 28a formed in the refrigerant outer ring chamber partition wall 28 are formed at a plurality of locations. be able to.

  Also by this, it can be confirmed from the simulation results shown in FIGS. 10A and 10B that the portion where there is no flow velocity in the vicinity of the entrance / exit of the partition wall communication opening 28a can be greatly reduced.

  In the above description, as shown in FIG. 1A and the like, the refrigerant introduction port 38a for introducing the refrigerant into the refrigerant outer ring introduction chamber 27a has a rectangular cross section that maintains the cylindrical shape of the refrigerant supply pipe 38. T

  However, the present invention is not necessarily limited to this. For example, as shown in FIGS. 11A and 11B, the refrigerant inlet formed in a trapezoidal cross section so that the inlet area increases as the refrigerant outer ring introduction chamber 27a is approached. 38b.

  Thereby, in the vicinity of the refrigerant introduction port 38b of the refrigerant outer ring chamber 27, a turbulent flow is generated between the refrigerant flow to the refrigerant buffer area 22b and the refrigerant flow to the refrigerant outer ring introduction chamber 27a, so that the medium It is possible to prevent the flow from being hindered.

  The present invention is a vapor phase growth method such as a vertical MOCVD apparatus using a shower plate that introduces a gas into the space above the shower plate from the periphery and supplies a reaction gas to the substrate surface from a plurality of gas discharge holes of the shower plate. Available for equipment.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an embodiment of a vapor phase growth apparatus according to the present invention, and is a plan view illustrating a refrigerant flow in a refrigerant supply unit of a shower head. It is the schematic which shows the whole structure of the said vapor phase growth apparatus. It is sectional drawing which shows the structure of the shower head in the said vapor phase growth apparatus. It is a perspective view which shows the structure of the V group type refrigerant | coolant outer ring chamber of the V group type gas supply part in the said shower head. (A) is a perspective view which shows the structure of the refrigerant | coolant supply part in a shower head, (b) is an assembly exploded perspective view which shows the structure of a shower head. (A) is a top view which shows the structure of the refrigerant | coolant buffer area and refrigerant | coolant outer ring chamber in the said shower head, (b) is a top view which expands and shows the structure of the refrigerant | coolant outer ring chamber partition in a refrigerant | coolant outer ring chamber. . It is a top view which shows the comparative example and shows the flow of the refrigerant | coolant in the refrigerant | coolant supply part of the said shower head, when not providing a refrigerant | coolant outer ring chamber partition in a refrigerant | coolant outer ring chamber. (A) is a top view which shows the structure of the modification of the refrigerant buffer area and refrigerant | coolant outer ring chamber in the said shower head, (b) expands and shows the structure of the refrigerant | coolant outer ring chamber partition in the said refrigerant | coolant outer ring chamber. It is a top view. (A) is a top view which shows the structure of the refrigerant buffer area in the said shower head, and the other modification of a refrigerant | coolant outer ring chamber, (b) expands the structure of the refrigerant | coolant outer ring chamber partition in the said refrigerant | coolant outer ring chamber. FIG. (A) is a top view which shows the structure of the further another modification of the refrigerant | coolant buffer area and refrigerant | coolant outer ring chamber in the said shower head, (b) expanded the structure of the refrigerant | coolant outer ring chamber partition in the said refrigerant | coolant outer ring chamber. It is a top view shown. (A) is a top view which shows the structure of the further another modification of the refrigerant | coolant buffer area and refrigerant | coolant outer ring chamber in the said shower head, (b) is a structure of the refrigerant inlet of the refrigerant | coolant supply piping in the said refrigerant | coolant outer ring chamber. It is a top view which expands and shows. It is sectional drawing which shows the structure of the conventional vertical shower head type vapor phase growth apparatus. It is sectional drawing which shows the structure of the conventional vertical type shower head type vapor phase growth apparatus. It is sectional drawing which shows the structure of the conventional another vertical shower head type vapor phase growth apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Growth chamber 1a Gas exhaust port 2 Reactor 3 Substrate to be deposited 4 Susceptor 5 Heater 7 Rotating shaft 10 MOCVD apparatus (vapor phase growth apparatus)
11 Gas discharge part 12 Purge line 20 Shower head 21 Shower plate 22 Refrigerant supply part 22b Refrigerant buffer area (refrigerant intermediate chamber)
22d Ring 23 with refrigerant opening 23 III group gas supply unit 23a III group gas refrigerant outer ring passage 23b III group gas buffer area (gas intermediate chamber)
23c Group III gas supply pipe (gas supply pipe)
24 Group V gas supply section 24a Group V gas refrigerant outer ring passage 24b Group V gas buffer area (gas intermediate chamber)
24c Group V gas supply pipe (gas supply pipe)
24d Ring with V group gas opening 27 Refrigerant outer ring chamber 27a Refrigerant outer ring introduction chamber 27b Refrigerant outer ring discharge chamber 28 Refrigerant outer ring chamber partition wall (partition wall)
28a Bulkhead communication opening 38 Refrigerant supply piping 38a Refrigerant inlet 38b Refrigerant inlet 39 Refrigerant outlet 39a Refrigerant outlet 41 Gas inlet 42 Gas inlet 43 Gas inlet 44 Projection D1 Interval D2 Interval H Open H3 III Group gas discharge Hole (gas discharge hole)
H5 V group gas discharge hole (gas discharge hole)
Hin Refrigerant inflow opening (Refrigerant opening)
Hout Refrigerant outflow opening (refrigerant opening)
P Protrusion

Claims (4)

In a vapor phase growth apparatus for forming a film on the film formation substrate by supplying the gas into a growth chamber containing the film formation substrate through a shower plate provided with a plurality of gas discharge holes for discharging gas.
On the shower plate, a gas intermediate chamber that is filled with the gas and a refrigerant intermediate chamber that is filled with a refrigerant that cools the gas are sequentially stacked with the refrigerant intermediate chamber facing the shower plate.
In the refrigerant intermediate chamber, a plurality of gas supply pipes communicating from the gas intermediate chamber to a plurality of gas discharge holes of the shower plate are provided penetrating into the non-partition wall partition state ,
Around the refrigerant intermediate chamber, an annular refrigerant outer ring chamber is provided via a ring-shaped wall,
The refrigerant outer ring chamber includes a refrigerant outer ring introduction chamber into which refrigerant is introduced from a refrigerant introduction port opposed to a refrigerant inflow opening formed in the ring-shaped wall to the refrigerant intermediate chamber, and an opposite of the refrigerant introduction port. A refrigerant outer ring discharge chamber that is provided at a position and from which a refrigerant is discharged from a refrigerant discharge port facing a refrigerant outflow opening formed in the ring-shaped wall from the refrigerant intermediate chamber; and the refrigerant outer ring introduction chamber; A partition wall that partitions the refrigerant outer ring discharge chamber,
Part of the partition wall is provided with a partition wall communication opening that connects the refrigerant outer ring introduction chamber and the refrigerant outer ring discharge chamber ,
The ring-shaped wall of the refrigerant outer ring chamber is provided with a protrusion that protrudes toward the refrigerant intermediate chamber in the vicinity of the partition wall,
The gap between the protrusion and the gas supply pipe provided in the refrigerant intermediate chamber is narrower than the gap between the gas supply pipes,
The vapor phase growth apparatus characterized in that the protruding portion protrudes toward the refrigerant intermediate chamber so as to form a string on the ring-shaped wall . The partition communication opening formed in the partition wall has a taper whose opening width increases from the refrigerant outer ring introduction chamber toward the refrigerant outer ring discharge chamber, or the opening width from the refrigerant outer ring introduction chamber toward the refrigerant outer ring discharge chamber. vapor deposition apparatus according to claim 1, wherein the is taper narrowing is formed. 3. The vapor phase growth apparatus according to claim 1, wherein the partition wall communication openings formed in the partition wall are formed at a plurality of locations. Refrigerant inlet for introducing refrigerant into said refrigerant outside ring introduction chamber, according to claim 1, 2 or 3, characterized in that it is formed as the inlet area with the approach to the refrigerant exocyclic introducing chamber becomes large The vapor phase growth apparatus described.