KR101983334B1

KR101983334B1 - Apparatus and method for depositing thin film

Info

Publication number: KR101983334B1
Application number: KR1020150077926A
Authority: KR
Inventors: 김성열; 이재승; 한재현
Original assignee: 에이피시스템 주식회사
Priority date: 2015-06-02
Filing date: 2015-06-02
Publication date: 2019-09-03
Also published as: KR20160142059A

Abstract

The present invention relates to a thin film deposition apparatus and a thin film deposition method, and more particularly, to a thin film deposition apparatus and a thin film deposition method that can reduce the generation of particles by the gas phase reaction in the chamber.
According to an embodiment of the present invention, a thin film deposition apparatus may include: a source material supply module disposed in a first axial direction across a substrate to supply a source material on the substrate; A substrate support for supporting the substrate; And a driving part connected to the substrate support to move the substrate support in a direction crossing the first axial direction, wherein the source material supply module includes a plurality of injection holes formed along the first axial direction, A source material nozzle unit spraying a source material on the substrate; And a plurality of exhaust holes formed around the source material nozzle part to exhaust the residue of the source material in a direction different from the spraying direction of the source material.

Description

Thin film deposition apparatus and thin film deposition method {Apparatus and method for depositing thin film}

The present invention relates to a thin film deposition apparatus and a thin film deposition method, and more particularly, to a thin film deposition apparatus and a thin film deposition method that can reduce the generation of particles by the gas phase reaction in the chamber.

Atomic Layer Deposition (ALD) is a thin film deposition technique for depositing one or more thin layers of material on a substrate. Atomic layer deposition (ALD) uses two types of chemicals, one is the source precursor and the other is the reactant precursor. In general, atomic layer deposition (ALD) involves four steps: injection of the precursor precursor, removal of the physisorption layer of the precursor precursor, injection of the reaction precursor, and removal of the physisorption layer of the reaction precursor. Atomic layer deposition (ALD) can be a slow process that takes a long time or many iterations until a layer of material of the desired thickness is obtained. In order to solve this problem, a linear atomic layer deposition apparatus or the like is used to rapidly process an atomic layer deposition process.

Conventional linear atomic layer deposition apparatus has one or more source material supply module and reaction gas supply module for depositing an atomic layer on a substrate. When the substrate passes under the source material supply module and the reaction gas supply module, the substrate is exposed to the source precursor and the reaction precursor. Here, the material precursor molecules deposited on the substrate react with the reaction precursor molecules or the source precursor molecules are replaced by the reaction precursor molecules to deposit a material layer on the substrate. In this case, a problem arises in that particles are generated by vapor phase reaction of excess raw material precursor molecules or reactive precursor molecules remaining after the material layer is deposited.

In order to reduce particles caused by the gas phase reaction, a purge gas module is installed between the source material supply module and the reaction gas supply module to expose the substrate to the purge gas, thereby removing excess raw material precursor molecules or reactive precursor molecules from the substrate. However, the raw material precursor and the reaction precursor injected from the source material supply module and the reaction gas supply module can be prevented from meeting at the upper portion of the substrate, but the problem of not effectively removing the excess raw material precursor molecules left by the movement of the substrate have.

Korean Patent Publication No. 10-2014-0145047

The present invention provides a thin film deposition apparatus and a thin film deposition method capable of uniformly depositing a source material in the entire substrate while reducing the generation of particles by the gas phase reaction in the chamber.

According to an embodiment of the present invention, a thin film deposition apparatus may include: a source material supply module disposed in a first axial direction across a substrate to supply a source material on the substrate; A substrate support for supporting the substrate; And a driving part connected to the substrate support to move the substrate support in a direction crossing the first axial direction, wherein the source material supply module includes a plurality of injection holes formed along the first axial direction, A source material nozzle unit spraying a source material on the substrate; And a plurality of exhaust holes formed around the source material nozzle part to exhaust the residue of the source material in a direction different from the spraying direction of the source material.

The plurality of exhaust holes may be symmetrically formed around the source material nozzle unit.

The source material nozzle part may include a concave part on a surface facing the substrate, and the plurality of injection holes may be formed in the concave part.

The source material supply module may further include a wing formed to extend outwardly on an outer surface of the source material nozzle part.

The wing portion may be formed at both ends of the source material nozzle portion in the first axial direction.

The width of the wing portion may be wider than both ends in the first axial direction.

The plurality of exhaust holes may have an area of a plurality of exhaust holes located at both ends in the first axial direction of the source material supply module smaller than an area of the plurality of exhaust holes located at the center of the source material supply module.

The source material supply module may include a distribution unit that distributes the source material to the plurality of injection holes; And a flow rate control part provided in the distribution part to adjust a supply amount of the source material supplied to the plurality of injection holes.

The source material nozzle part may have a greater amount of supply of the source material supplied to the plurality of injection holes located at both ends of the first axial direction than the supply amount of the source material supplied to the plurality of injection holes located at the central portion.

The substrate may further include a reaction gas supply module positioned apart from the source material supply module in a direction in which the substrate moves, and supplying a reaction gas reacting with the source material on the substrate.

The reaction gas supply module may include a plasma forming unit, and supply the reaction gas in a radical form using plasma.

It may further include a blocking unit provided between the source material supply module and the reaction gas supply module to suppress the gas phase reaction of the source material and the reaction gas.

It may further include a pumping port provided on the outside of the substrate support.

The thin film deposition method according to another embodiment of the present invention is to move in a direction intersecting the first axial direction through a plurality of injection holes provided in the linear source material supply module disposed in the first axial direction across the substrate Supplying a source material onto a substrate; Exhausting the residue of the source material through an exhaust hole provided in the source material supply module; And supplying a reaction gas onto the substrate moving in a direction crossing the first axial direction by using a reaction gas supply module positioned to be spaced apart from the source material supply module.

In the supplying of the reaction gas, plasma may be formed in the reaction gas supply module to spray the reaction gas in a radical form.

The supplying of the source material may include distributing the source material to the plurality of injection holes; And adjusting the supply amount of the source material supplied to the plurality of injection holes.

The supply amount of the source material may be greater than the plurality of injection holes located at both ends of the first axial direction of the source material supply module than the plurality of injection holes located at the center of the source material supply module.

In the exhausting step, the residue of the source material may be exhausted at a different speed depending on the position by adjusting the opening area of the exhaust hole.

The open area of the exhaust hole may have both ends in the first axial direction of the source material supply module narrower than a center part of the source material supply module.

The thin film deposition apparatus according to an embodiment of the present invention exhausts the residue of the source material through the exhaust hole formed at the outside of the source material nozzle part in the source material supply module as well as the exhaust to the outside of the substrate support through the pumping port of the chamber. This can minimize particles generated by the gas phase reaction of the source material inside the chamber.

In addition, by controlling the opening area of the exhaust hole through the wing, both the first axial direction across the substrate is exhausted through the pumping port of the chamber and the exhaust through the exhaust hole at the same time to solve the problem of thinning the deposition thickness of the source material. have.

Accordingly, the source material may be uniformly deposited on the entire substrate while reducing particle generation due to the gas phase reaction in the chamber.

In addition, the thin film deposition apparatus according to the present invention is to distribute the source material through the source material supply module, the problem of thinning the deposition thickness of the source material at both ends in the first axial direction by adjusting the supply amount of the source material for each part In order to solve the problem, the source material may be uniformly deposited on the entire substrate.

On the other hand, the thin film deposition apparatus according to the present invention may further include a blocking portion between the source material supply module and the reaction gas supply module to prevent the source material and the reaction gas meet on the upper portion of the substrate, whereby the source material and the reaction gas Particles generated by the gas phase reaction can also be reduced.

1 is a view showing a thin film deposition apparatus according to an embodiment of the present invention.
2 is a view showing a source material supply module of a thin film deposition apparatus according to an embodiment of the present invention.
3 is a conceptual diagram for explaining the effect of the wing of the source material supply module according to an embodiment of the present invention.
Figure 4 is a conceptual diagram for explaining the effect of the length of the wing of the source material supply module according to an embodiment of the present invention.
5 is a conceptual view for explaining a distribution structure of the source material supply module according to an embodiment of the present invention.
6 is a flow chart showing a thin film deposition method according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. In the description, like reference numerals refer to like elements, and the drawings may be partially exaggerated in size in order to accurately describe embodiments of the present invention, and like reference numerals refer to like elements in the drawings.

1 is a view showing a thin film deposition apparatus according to an embodiment of the present invention, Figure 1 (a) is a plan view of the thin film deposition apparatus, Figure 1 (b) is a perspective view of the thin film deposition apparatus.

Referring to FIG. 1, a thin film deposition apparatus according to an embodiment of the present invention is disposed in a first axial direction across a substrate 1 to supply a source material 11 to supply a source material 11 onto the substrate 1. Module 100; A substrate support (200) for supporting the substrate (1); And a driving part 500 connected to the substrate support 200 to move the substrate support 200 in a direction crossing the first axial direction.

The source material supply module 100 may be disposed in a first axial direction across the substrate 1, and scan the substrate 1 to supply the source material 11 onto the substrate 1.

The substrate support 200 may support the substrate 1 and may be moved by the driver 500, so that the substrate 1 may be stably supported without shaking when the substrate support 200 moves. have.

The driver 500 may be connected to the substrate support 200, and move the substrate support 200 in a direction crossing the first axial direction. The driver 500 moves the substrate support 200 during the supply of the source material 11 so that the substrate 1 is scanned by the source material supply module 100 so that the source material 11 is applied to the entire region of the substrate 1. ) Can be adsorbed. And the driving unit 500 is fixed to the power source for providing power to move the substrate support 200, the power transmission unit for transmitting power provided from the power source and the substrate support 200 is connected to the power transmission unit. It may include a connecting portion, the configuration is not limited to this, it is sufficient if the substrate support 200 can be moved in the direction crossing the first axial direction.

In the thin film deposition apparatus according to the present invention, the source material supply module 100 is spaced apart from the source material supply module 100 in a direction in which the substrate 1 moves, and the reaction gas reacts with the source material 11 on the substrate 1. It may further include a reaction gas supply module 300 for supplying.

The reaction gas supply module 300 may supply a reaction gas reacting with the source material 11 on the substrate 1, and may be spaced apart from the source material supply module 100 in a direction in which the substrate 1 moves. Can be. Here, the reaction gas supply module 300 may be spaced apart in a direction crossing the first axis direction when the substrate 1 is linearly moved, and rotates around the rotation axis when the substrate 1 is moved in rotation. May be spaced apart.

The reaction gas supply module 300 may include a plasma forming unit (not shown) for forming a plasma, and may supply the reaction gas in a radical form using the plasma formed in the plasma forming unit. Plasma forming unit (not shown) may be provided inside the reaction gas supply module 300, may be provided outside the reaction gas supply module 300, when provided inside the gas supply module 300 The plasma may be formed in the gas supply module 300 by using electrodes facing each other. Here, a DC power source (DC power source) or an AC power source (for example, RF power source) may be applied to the electrode, and a plasma may be formed due to the voltage difference between the anodes due to the application of the power source.

When the reaction gas is supplied in a radical form by using the plasma formed in the plasma forming unit, since the reaction gas is activated, the reactivity with the source material 11 may be improved, and the reaction with the source material 11 may occur. The thin film may be stably deposited by the chemical reaction of the gas.

2 is a view showing a source material supply module of the thin film deposition apparatus according to an embodiment of the present invention, Figure 2 (a) is a bottom view of the source material supply module, Figure 2 (b) of the source material supply module Side cross section view.

Referring to FIG. 2, the source material supply module 100 includes a plurality of injection holes 111 formed along the first axial direction, and source material nozzles for injecting the source material 11 onto the substrate 1. Part 110; And a plurality of exhaust holes 121 formed around the source material nozzle unit 110 to exhaust the residues 11 ′ of the source material 11 in a direction different from the injection direction of the source material 11. Can be.

The source material nozzle unit 110 may be positioned at the center of the source material supply module 100 and includes a plurality of injection holes 111 formed along the first axial direction at the center of the source material nozzle unit 110. can do. The source material nozzle unit 110 may be formed to extend in a first axial direction across the substrate 1 according to the arrangement and shape of the source material supply module 100, and in a direction crossing the first axial direction. The source material 11 may be sprayed onto the moving substrate 1. In this way, the source material 11 sprayed onto the substrate 1 is physically adsorbed on the substrate 1, and the residue 11 ′ of the source material 11 that is physically adsorbed and remains to prevent the gas phase reaction from occurring. Exhausted. Here, the details of the exhaust of the residue 11 ′ of the source material 11 will be described later.

The source material nozzle unit 110 may include a recess 112 on a surface facing the substrate 1, and a plurality of injection holes 111 may be formed in the recess 112. In this case, a step is generated between the surface of the source material nozzle part 110 facing the substrate 1 and the plurality of injection holes 111. When a step is generated between the surface of the source material nozzle unit 110 and the plurality of injection holes 111, the plurality of injection holes 111 may be farther from the substrate 1 than the surface of the source material nozzle unit 110. Therefore, the source material 11 may be diffused onto the substrate 1, and the sidewalls of the source material nozzle part 110 may be formed when the plurality of injection holes 111 are located at the center (or center line) of the recess. Alternatively, the source material 11 may be uniformly diffused on the substrate 1 due to the sidewalls of the recess. Accordingly, the source material 11 sprayed onto the substrate 1 may be physically adsorbed onto the substrate 1 more uniformly.

The plurality of exhaust holes 121 may be formed around the source material nozzle unit 110, and the source material 11 is sprayed onto the substrate 1 to physically adsorb and remain on the substrate 1. The residue 11 ′ of 11 can be exhausted in a direction different from the injection direction of the source material 11 (eg, opposite to the injection direction or upward direction). Here, the meaning of "circumference" may include the edge of the object and the edge of the object, in the present invention is spaced apart along the edge of the source material nozzle unit 110, not the side of the source material nozzle unit 110. It may mean around the edge of the source material nozzle unit 110 including. The plurality of exhaust holes 121 are sprayed onto the substrate 1 before the residue 11 ′ of the source material 11 spreads widely and remains of the source material 11 that is not physically adsorbed on the substrate 1. By evacuating the water 11 ', the residue 11' of the source material 11 can be effectively evacuated. Accordingly, the gas phase reaction of the source material 11 may be prevented in the chamber 10, and particles generated by the gas phase reaction of the source material 11 may be minimized in the chamber 10. Meanwhile, the plurality of exhaust holes 121 may be formed in the housing 120 of the source material supply module 100.

The plurality of exhaust holes 121 may be symmetrically formed with respect to the source material nozzle unit 110. Although the residues 11 ′ of the source material 11 can be effectively exhausted through the plurality of exhaust holes 121, the plurality of exhaust holes 121 are symmetrically formed around the source material nozzle unit 110. If not, the thickness of the adsorption (or atomic layer deposition) of the source material 11 varies according to the position of the substrate 1 according to the number of the exhaust holes 121 and the distance from the exhaust hole 121. Atomic layer 2 may be non-uniform in thickness. Accordingly, the plurality of exhaust holes 121 are formed to be symmetric about the source material nozzle unit 110, and the number of the exhaust holes 121 is adjusted so that the atomic layer 2 of the source material 11 forms the substrate 1. It can be made to be uniformly deposited throughout.

On the other hand, in the case of the linear source material supply module 100, since both ends of the first axial direction (or the longitudinal direction) are in contact with the outside of the substrate support 200, the chamber provided on the outside of the substrate support 200 ( 10) Since the residue 11 ′ of the source material 11 may be directly exhausted through an internal pumping port (not shown), the exhaust hole 121 is not particularly required, but the first axial direction (or the longitudinal direction) is performed. Since the center of the substrate is separated from the outside of the substrate support 200, the residue 11 ′ of the source material 11 can not be directly exhausted through the pumping port (not shown) inside the chamber 10, but the source is exhausted. Since the residue 11 'of the material 11 is diffused to other regions of the substrate 1, an exhaust hole 121 is required to prevent diffusion of the residue 11' of the source material 11.

3 is a conceptual view for explaining the effect of the wing portion of the source material supply module according to an embodiment of the present invention, Figure 3 (a) is not forming the wing portion, Figure 3 (b) is formed wing portion If it is.

Referring to FIG. 3, both ends of the first axial direction (or the longitudinal direction) of the source material supply module 100 when the wing is not formed has a thickness of adsorption (or atomic layer deposition) than the central portion of the first axial direction. It can be seen that thin. Both ends of the first axial direction of the source material supply module 100 have a greater number of exhaust holes 121 per unit area than the central portion of the first axial direction, and not only the exhaust through the exhaust hole 121 but also the chamber 10. Since the pumping port (not shown) provided in the exhaust gas is also exhausted, the source material 11 stays on the substrate 1, so that the adsorption thickness on the substrate 1 is not sufficiently adsorbed. In order to solve this problem, the number of the exhaust holes 121, such as removing the exhaust holes 121 formed in the width direction (or the direction intersecting with the first axis direction) may be adjusted. The residue 11 'of the outgoing source material 11 is exhausted before being diffused, and the exhaust hole 121 is symmetric about the source material nozzle part 110, thereby leaving the residue 11' of the source material 11 The number can be kept as it is so that the exhaust gas is stably exhausted. For example, when the exhaust holes 121 located at both ends of the first axial direction (or the longitudinal direction) of the source material supply module 100 are completely removed, the amount of exhaust gas with respect to the time exhausted through the exhaust holes 121 is exhausted. (Or exhaust speed) and the displacement (or exhaust speed) with respect to the time exhausted through the pumping port (not shown) provided in the chamber 10, the pumping port is the remaining of the source material 11 on the substrate (1) It is difficult to control the minute exhaust velocity for the adsorption of uniform source material 11 over the entire area of the substrate 1 because the exhaust area that the water 11 ′ can be exhausted is difficult to control the minute exhaust velocity. do.

Accordingly, the source material supply module 100 of the present invention extends outward from the source material nozzle part 110 on the outer surface of the source material nozzle part 110 as shown in FIG. 3 (b). It may further include.

The wing 130 may be formed on the entire outer surface along the outer surface of the source material nozzle unit 110, or may be formed only on a portion of the outer surface of the source material nozzle unit 110. In this case, the wing 130 may be formed at the end (for example, the lower end) toward the substrate 1 from the source material nozzle unit 110, as shown in Figure 3 (b) source material nozzle unit 110 It may be formed only at both ends of the first axial direction (or longitudinal direction) of. The wing 130 may adjust the displacement (or exhaust velocity) with respect to the time of the obstructed exhaust hole 121 ′ by covering the exhaust hole 121. As a result, since the amount of displacement with respect to time can be adjusted for each part of the substrate 1, the amount of emission (or exhaust rate) with respect to time at both ends of the first axial direction of the source material supply module 100 is lowered, thereby reducing the amount of source material 11. By increasing the time for staying in the substrate 1, the source material 11 can be sufficiently adsorbed on the substrate 1.

Accordingly, when the wing 130 is formed only at both ends of the first axial direction (or the longitudinal direction) of the source material nozzle unit 110 as shown in FIG. 3 (b), the first shaft of the source material supply module 100 is formed. By covering a part of the plurality of exhaust holes 121 located at both ends in the direction, the exhaust velocity of the both ends of the first axial direction of the source material supply module 100 can be lowered. By increasing the time to stay in 1), the source material 11 can be sufficiently adsorbed on the substrate 1, and the atomic layer 2 of the source material 11 can be controlled by adjusting the open area of the covered exhaust hole 121 '. ) Can be uniformly deposited throughout the substrate 1. Here, a part of the plurality of exhaust holes 121 may be a part of the plurality of exhaust holes 121, a part of each of the plurality of exhaust holes 121, or only a part of each of the plurality of exhaust holes 121. It can also mask.

4 is a conceptual view for explaining the effect of the length of the wing of the source material supply module according to an embodiment of the present invention, Figure 4 (a) is a wing that does not cover the exhaust hole, Figure 4 (b) is Wings that cover the exhaust hole.

In addition, the wing 130 may induce the flow of the source material (11). The wing 130 may induce a flow of the source material 11 to the exhaust hole 121 or the space 120 with the housing 120, the source material 11 is the exhaust hole 121 or The moving path of the source material 11 may be provided between the substrate 1 and the wing 130 through the wing 130 until the space 122 with the housing 120 is reached. Accordingly, it is possible to prevent the source material 11 from spreading upward before reaching the space 122 with the exhaust hole 121 or the housing 120. In other words, the source material 11 can flow along the surface of the substrate 1 without being spaced (or immediately exhausted) from the surface of the substrate 1 by the exhaust flow so that the source material 11 can flow through the substrate. The surface of (1) can be made to contact for a long time. This can increase the amount of adsorption by providing sufficient adsorption time. In addition, the source material 11 is brought into close contact with the substrate 1 by adjusting the distance between the substrate 1 and the wing 130 (or the height of the movement path of the source material) so that the source material 11 adheres to the substrate 1. It is possible to stay sufficiently on the), to be sufficiently adsorbed, and to adjust the adsorption area of the source material 11 according to the width (or length) of the wing 130. Here, the adsorption area may be the maximum area that the source material supply module 100 can adsorb the source material 11 when it is assumed that the substrate 1 is stationary.

Accordingly, the width (or length) of the wing portions 130 at both ends in the first axial direction is wider than the width of the wing portions 130 at the center portion in the first axial direction, thereby allowing the first material of the source material supply module 100 to be extended. In the central portion of the source material supply module 100 and the effect of covering the part of the plurality of exhaust holes 121 at both ends in the axial direction to lower the exhaust speed of the both ends of the first axial direction of the source material supply module 100 The source material 11 can stay on the substrate 1 for a long time without obstructing the exhaust hole 121, so that the effect can be sufficiently adsorbed and the adsorption area of the source material 11 can be widened. Accordingly, the width (or length) of the wing 130 may be wider at both ends in the first axial direction than at the center in the first axial direction.

On the other hand, the plurality of exhaust holes 121, the area of the plurality of exhaust holes 121 located at both ends in the first axial direction of the source material supply module 100 is the first shaft of the source material supply module 100 It may be smaller than the area of the plurality of exhaust holes 121 located in the central portion of the direction. Through this, the wing 130 may reduce the open area of the exhaust holes 121 at both ends of the first axial direction of the source material supply module 100, thereby allowing both ends of the source material supply module 100 to extend in the first axial direction. It is possible to obtain an effect of reducing the evacuation rate of the gas, thereby allowing the atomic layer 2 of the source material 11 to be uniformly deposited on the entire substrate 1.

5 is a conceptual diagram illustrating a distribution structure of a source material supply module according to an embodiment of the present invention.

Referring to FIG. 5, the source material supply module 100 may include a distribution unit 140 which distributes the source material 11 to the plurality of injection holes 111; And a flow rate adjusting unit 150 provided to the distribution unit 140 to adjust a supply amount of the source material 11 supplied to the plurality of injection holes 111. The distribution unit 140 may distribute the source material 11 to supply the plurality of injection holes 111 to adjust the supply amount of the source material 11 according to the positions of the plurality of injection holes 111. In this case, the source material 11 may be distributed to each of the plurality of injection holes 111, and a predetermined number of injection holes 111 may be grouped and distributed for each position of the plurality of injection holes 111. Here, the inside of the source material nozzle unit 110 may be divided into groups to divide the plurality of injection holes 111 by a predetermined number.

The flow rate controller 150 may be provided to the distribution unit 140 to adjust the supply amount of the source material 11 supplied to the plurality of injection holes 111, and the source material supplied to each of the plurality of injection holes 111. The supply amount of (11) may be adjusted, or the supply amount of the source material 11 may be adjusted for each group by grouping the plurality of injection holes 111 by a predetermined number.

For example, in the case of distributing through the respective supply lines 141 in the distribution unit 140, the flow control unit 150 controls the flow rate of the source material 11 through the opening and closing of the supply line 151 and a measuring unit 152 for measuring the supply amount of the source material 11 passing through the supply line. In this case, by checking the supply amount of the source material 11 through the measurement unit 152, the supply amount of the source material 11 can be adjusted according to the flow control valve 151 as needed. Accordingly, the supply amount of the source material 11 may be adjusted according to the positions of the plurality of injection holes 111 so that the atomic layer 2 of the source material 11 may be uniformly deposited on the entire substrate 1.

The source material nozzle unit 110 supplies a supply amount of the source material 11 supplied to the plurality of injection holes 111 located at both ends of the first axial direction through the flow control unit 150 in the first axial direction. It may be larger than the supply amount of the source material 11 supplied to the plurality of injection holes 111 located in the central portion. Both ends of the first axial direction of the source material nozzle unit 110 are provided in the chamber 10 because they are close to the outer periphery of the substrate 1, and a pumping port (not shown) for exhausting deposition by-products to the outer periphery of the substrate 1. Since the adsorption thickness of the source material 11 adsorbed at both ends of the first axial direction may be thinner than that of the source material 11 adsorbed at the central part of the first axial direction. Thus, in order to make the adsorption thickness of the source material 11 uniform to the entire substrate 1, the source material supplied to the plurality of injection holes 111 located at both ends of the first axial direction of the source material nozzle part 110 ( 11 and the supply amount of the source material 11 supplied to the plurality of injection holes 111 located in the center portion of the first axial direction of the source material nozzle unit 110 can be adjusted differently, and the source material nozzle unit ( A plurality of injections of the source material 11 supplied to the plurality of injection holes 111 located at both ends of the first axial direction of the 110 in the first axial direction of the source material nozzle unit 110 The amount of the source material 11 supplied to the hole 111 may be greater than that. In this case, the first of the source material nozzle unit 110 on the basis of the supply amount of the source material 11 supplied to the plurality of injection holes 111 located in the center portion of the first axial direction of the source material nozzle unit 110 A supply amount of the source material 11 supplied to the plurality of injection holes 111 located at both ends in the axial direction is supplied to the plurality of injection holes 111 located at the center portion of the first axial direction of the source material nozzle part 110. It can be adjusted to be larger than the supply amount of the source material (11).

The thin film deposition apparatus of the present invention may further include a blocking unit 400 provided between the source material supply module 100 and the reaction gas supply module 300 to suppress the gas phase reaction between the source material 11 and the reaction gas. Can be.

When the reaction gas is supplied in a radical form using a plasma, the reaction gas supplied in the radical form is diffused to the vicinity of the source material nozzle unit 110, and the source material 11 and the source material nozzle unit 110 are connected to the source material nozzle unit 110. Particles may be formed by a gaseous reaction of the reaction gas, and the particles are continuously accumulated in the source material nozzle unit 110 so that the particles accumulated on the substrate 1 fall off and are disposed on the final product after the substrate 1 is processed. It may cause a problem that a defect occurs. Therefore, it is necessary to prevent the reaction gas supplied in a radical form from being diffused into the source material supply module 100, and the blocking unit 400 is disposed between the source material supply module 100 and the reaction gas supply module 300. The reactant gas provided in a radical form may be prevented from diffusing into the source material supply module 100 or the source material 11 and the reactant gas may meet on the upper portion of the substrate 1. The blocking unit 400 may be a blocking unit injecting purge gas onto the substrate 1 between the spaces of the source material supply module 100 and the reaction gas supply module 300 to form an air curtain. It may include a purge gas supply unit 410 for injecting a purge gas onto the substrate 1 and a vacuum exhaust unit 420 for exhausting the deposition residue of the source material 11 and the reaction gas together with the purge gas. .

The purge gas supplier 410 may spray the purge gas onto the substrate 1 to block diffusion of the reaction gas supplied in a radical form into the source material supply module 100. At this time, it is necessary to exhaust the injected purge gas and the reaction gas supplied in a radical form in which diffusion is blocked.

The vacuum exhaust unit 420 may be disposed between the source material supply module 100 and the purge gas supply unit 410 and between the reaction gas supply module 300 and the purge gas supply unit 410. The reaction gas supplied in the form of blocked radicals can be exhausted. Each of the vacuum exhaust units 420 forms an exhaust nozzle for moving the deposition by-product from the space between the substrate 1 and the source material supply module 100 and the reaction gas supply module 300 to a space separated from the space. (Not shown), and a pressure generator (not shown) for applying a suction force to the exhaust nozzle. Accordingly, the vacuum exhaust unit 420 sucks and removes deposition by-products between the substrate 1, the source material supply module 100, and the reaction gas supply module 300, so that the deposition by-products fall on the substrate 1 and the substrate 1 is removed. It is possible to suppress and prevent deterioration of the quality.

On the other hand, the blocking unit 400 forms a magnetic field (F) between the source material supply module 100 and the reaction gas supply module 300, the reaction gas supplied in a radical form toward the source material supply module 100 It may also be a blocking unit for preventing the diffusion. In this case, the vacuum exhaust unit 420 is disposed between the magnetic field forming unit and the source material supply module 100 and between the magnetic field forming unit and the reactive gas supply module 300 based on the magnetic field forming unit (not shown). can do.

The thin film deposition apparatus of the present invention may further include a pumping port (not shown) provided outside the substrate support 200 in the chamber 10. The pumping port (not shown) may exhaust the residue 11 ′ of the source material 11 remaining on the substrate 1 and the surplus reaction gas, deposition byproducts, particles, etc., which are not contributing to thin film deposition. . Thus, particles or deposition by-products may fall on the substrate 1 to prevent and prevent deterioration of the quality of the substrate 1, and particles or deposition by-products may be prevented from being deposited on the inner wall of the chamber 10. On the other hand, the pumping port reduces the time for which the source material 11 stays on the substrate 1 at both ends of the first axial direction of the source material supply module 100 and thus cannot be sufficiently adsorbed on the substrate 1. Adsorption thickness may be made thinner.

6 is a flowchart illustrating a thin film deposition method according to another embodiment of the present invention.

A thin film deposition method according to another embodiment of the present invention will be described in more detail with reference to FIG. 6, and details overlapping with those described above with respect to the thin film deposition apparatus according to an embodiment of the present invention will be omitted.

The thin film deposition method according to another embodiment of the present invention is to move in a direction intersecting the first axial direction through a plurality of injection holes provided in the linear source material supply module disposed in the first axial direction across the substrate Supplying a source material on a substrate (S100); Exhausting the residue of the source material through an exhaust hole provided in the source material supply module (S200); And supplying a reaction gas on the substrate moving in a direction crossing the first axial direction by using a reaction gas supply module positioned to be spaced apart from the source material supply module (S300).

First, a source material is supplied onto the substrate moving in a direction intersecting the first axis direction by using a linear source material supply module including a plurality of injection holes formed along a first axis direction across the substrate. (S100). The source material supply module may be disposed in the first axial direction, and source material may be supplied onto the substrate through a plurality of injection holes provided in the source material supply module. This allows the source material to be physically adsorbed on the substrate.

Next, exhaust of the residue of the source material through the exhaust hole provided in the source material supply module (S200). Here, the exhaust hole may be formed at the edge of the source material supply module. When the source material is supplied onto the substrate, there is a residue of the source material that is physically adsorbed and remains, and the residue of the source material is exhausted through the exhaust hole so that the gas phase reaction of the source material does not occur. In this case, the residue of the source material may be exhausted in a direction different from the direction in which the source material is injected through the plurality of injection holes (for example, in a direction opposite to the injection direction or in an upper direction).

The reaction gas is supplied to the substrate moving in a direction crossing the first axial direction by using a reaction gas supply module positioned to be spaced apart from the source material supply module (S300). A reaction gas is supplied to the source material adsorbed on the substrate to cause a chemical reaction to deposit a thin film. Here, the reaction gas supply module may be spaced apart in a direction crossing the first axis direction when the substrate is linearly moved, and may be spaced apart by rotating about the rotation axis when the substrate is rotated.

In the supplying of the reaction gas, plasma may be formed in the reaction gas supply module to spray the reaction gas in a radical form. When the reaction gas is supplied in a radical form using a plasma, the reaction gas may be activated, and thus the reactivity of the source material may be improved, and the thin film may be stably formed by chemical reaction of the source material and the reaction gas. Can be deposited.

First, the source material is distributed to the plurality of injection holes. The source material may be distributed and supplied to the plurality of injection holes in order to adjust the supply amount of the source material according to the positions of the plurality of injection holes. In this case, the source material may be distributed to each of the plurality of injection holes, and a predetermined number of the injection holes may be grouped and distributed according to the positions of the plurality of injection holes. Here, the inside of the source material nozzle unit may be formed to be divided into groups in order to group and distribute the plurality of injection holes by a predetermined number.

And the supply amount of the source material supplied to the plurality of injection holes is adjusted. In this case, the supply amount of the source material supplied to each of the plurality of injection holes may be adjusted, or the supply amount of the source material may be adjusted for each group by grouping the plurality of injection holes by a predetermined number. Accordingly, the supply amount of the source material may be adjusted according to the positions of the plurality of injection holes so that the atomic layer of the source material may be uniformly deposited on the entire substrate.

The supply amount of the source material may be greater than the plurality of injection holes located at both ends of the first axial direction of the source material supply module than the plurality of injection holes located at the center of the source material supply module. Both ends of the first axial direction of the source material nozzle part are proximate to the outer periphery of the substrate, so that both ends of the first axial direction are affected by a pumping port provided in the chamber to exhaust deposition by-products to the outer periphery of the substrate. The adsorption thickness of the source material adsorbed on the substrate may be thinner than the adsorption thickness of the source material adsorbed on the central portion in the first axial direction. Accordingly, the supply amount of the source material supplied to the plurality of injection holes located at both ends of the first axial direction of the source material nozzle part and the source material nozzle part to make the adsorption thickness of the source material uniform across the substrate. The amount of supply of the source material supplied to the plurality of injection holes located in the central portion of the first axial direction can be adjusted differently, and the supply to the plurality of injection holes located at both ends of the first axial direction of the source material nozzle portion The supply amount of the source material may be greater than the supply amount of the source material supplied to the plurality of injection holes positioned in the center portion in the first axial direction of the source material nozzle unit. In this case, the plurality of injections located at both ends of the source material nozzle part in the first axial direction based on the supply amount of the source material supplied to the plurality of injection holes located in the center part of the first axial direction of the source material nozzle part. The supply amount of the source material supplied to the hole may be adjusted to be greater than the supply amount of the source material supplied to the plurality of injection holes positioned in the center portion of the source material nozzle unit in the first axial direction.

In the exhausting step, the residue of the source material may be exhausted at a different speed depending on the position by adjusting the opening area of the exhaust hole. Here, the opening area of the exhaust hole may be the area of each of the exhaust holes, or may be the total area of the exhaust hole or the opening area per unit area. By adjusting the opening area of the exhaust hole, it is possible to adjust the exhaust amount (or exhaust speed) with respect to the time of the source material, thereby adjusting the exhaust speed of the source material according to the position to uniform the source material throughout the substrate. Can be adsorbed.

The open area of the exhaust hole may have both ends in the first axial direction of the source material supply module narrower than a center part of the source material supply module. By reducing the opening area of the exhaust hole at both ends of the source material supply module in the first axial direction, the exhaust velocity of both ends of the source material supply module in the first axial direction can be reduced, whereby the source material It may be to be uniformly deposited throughout the substrate.

As such, in the present invention, since the residue of the source material can be exhausted not only to the outside of the substrate support through the pumping port of the chamber but also through the exhaust hole formed on the outside of the source material nozzle in the source material supply module, the source inside the chamber. Particles generated by the gas phase reaction of the material can be minimized. In addition, by controlling the opening area of the exhaust hole through the wing, both the first axial direction across the substrate is exhausted through the pumping port of the chamber and the exhaust through the exhaust hole at the same time to solve the problem of thinning the deposition thickness of the source material. have. Accordingly, the source material may be uniformly deposited on the entire substrate while reducing particle generation due to the gas phase reaction in the chamber. In addition, in the present invention, by distributing and supplying the source material through the source material supply module, and by adjusting the supply amount of the source material for each part, the problem that the deposition thickness of the source material is thinned at both ends in the first axial direction to solve the problem May be uniformly deposited throughout the substrate. On the other hand, the thin film deposition apparatus of the present invention further comprises a blocking portion between the source material supply module and the reaction gas supply module to prevent the source material and the reaction gas meet on the upper portion of the substrate, thereby Particles caused by gas phase reactions can also be reduced.

As used in the above description, the term “on” refers to a case in which the direct contact is not directly contacted but is positioned opposite to the upper or lower part, and is not only positioned opposite to the entire upper or lower part but also partially. It is also possible to be located opposite, and used to mean facing away from the position or in direct contact with the upper or lower surface. Thus, "on a substrate" may be the surface (top or bottom surface) of the substrate, or may be the surface of a film deposited on the surface of the substrate.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the above-described embodiments, and the general knowledge in the field of the present invention belongs without departing from the gist of the present invention as claimed in the claims. Those skilled in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. Therefore, the technical protection scope of the present invention will be defined by the claims below.

1 substrate 2 atomic layer of source material
10 chamber 11 source material
100: source material supply module 110: source material nozzle
111: injection hole 112: recess
120 housing 121 exhaust hole
122: spaced apart from the housing 130: wing portion
140: distribution unit 141: supply line
150: flow control unit 151: flow control valve
152 measurement unit 200 substrate support
300: reaction gas supply module 400: cutout
410: purge gas supply unit 420: vacuum exhaust unit
500 drive unit

Claims

A source material supply module disposed in a first axial direction across the substrate to supply a source material on the substrate;
A substrate support for supporting the substrate; And
A driver connected to the substrate support to move the substrate support in a direction crossing the first axial direction,
The source material supply module,
A source material nozzle unit including a plurality of injection holes formed along the first axial direction and spraying a source material on the substrate; And
A plurality of exhaust holes provided around the source material nozzle part including the first axial end portions and the central part of the source material supply module to exhaust the residue of the source material in a direction different from the injection direction of the source material; Include,
The source material nozzle portion further comprises a recess for providing a sidewall by forming a step on the surface facing the substrate,
The plurality of injection holes are formed in the concave portion,
And an exhaust hole provided at both ends of the first axial direction, the opening area of which is narrower than that of the exhaust hole provided at the center portion.

A source material supply module disposed in a first axial direction across the substrate to supply a source material on the substrate;
A substrate support for supporting the substrate; And
And a driving unit connected to the substrate support to move the substrate support in a direction crossing the first axial direction.
The source material supply module,
A source material nozzle unit including a plurality of injection holes formed along the first axial direction and spraying a source material on the substrate;
A plurality of exhaust holes provided around the source material nozzle part including the first axial end portions and the central part of the source material supply module to exhaust the residue of the source material in a direction different from the spraying direction of the source material;
A distribution unit distributing the source material to the plurality of injection holes; And
A flow rate control unit provided in the distribution unit to adjust a supply amount of the source material supplied to the plurality of injection holes,
The source material nozzle portion further comprises a recess for providing a sidewall by forming a step on the surface facing the substrate,
The plurality of injection holes are formed in the concave portion,
The flow rate control unit is a thin film deposition apparatus for supplying a larger amount of the source material than the injection hole located in the center portion to the injection hole located in both ends of the first axial direction.

The method according to claim 1 or 2,
And the plurality of exhaust holes are symmetrically formed around the source material nozzle part.

The method according to claim 1,
The source material supply module further comprises a wing formed on the outer surface of the source material nozzle portion extending in an outward direction.

The method according to claim 4,
And the wing portions are formed at both ends of the source material nozzle portion in the first axial direction.

The method according to claim 4,
The width of the wing portion is a thin film deposition apparatus having both ends in the first axial direction than the central portion.

The method according to claim 1,
The plurality of exhaust holes are thin film deposition apparatus wherein the area of the plurality of exhaust holes located at both ends in the first axial direction of the source material supply module is narrower than the area of the plurality of exhaust holes located in the center of the source material supply module.

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The method according to claim 1 or 2,
And a reaction gas supply module positioned apart from the source material supply module in a direction in which the substrate moves, and supplying a reaction gas reacting with the source material on the substrate.

The method according to claim 10,
The reaction gas supply module includes a plasma forming unit, the thin film deposition apparatus for supplying the reaction gas in a radical form using a plasma.

The method according to claim 10,
And a blocking unit provided between the source material supply module and the reaction gas supply module to suppress a gas phase reaction between the source material and the reaction gas.

The method according to claim 1 or 2,
Thin film deposition apparatus further comprises a pumping port provided on the outside of the substrate support.

Source material is supplied to the substrate moving in a direction intersecting the first axial direction through a plurality of injection holes provided in the source material nozzle portion of the linear source material supply module disposed in the first axial direction across the substrate. Doing;
Exhausting residues of the source material through exhaust holes provided at both ends of the first axial direction and a central portion of the source material supply module; And
Supplying a reaction gas onto the substrate moving in a direction intersecting the first axial direction by using a reaction gas supply module spaced apart from the source material supply module,
The plurality of injection holes are formed in the concave portion of the surface facing the substrate of the source material nozzle portion,
The opening area of the exhaust holes provided at both ends of the first axial direction is smaller than the opening area of the exhaust holes provided at the center portion,
And exhausting the exhaust gas at a lower exhaust speed than the exhaust holes provided at the central portion from the exhaust holes provided at both ends of the first axial direction.

Source material is supplied to the substrate moving in a direction intersecting the first axial direction through a plurality of injection holes provided in the source material nozzle portion of the linear source material supply module disposed in the first axial direction across the substrate. Doing;
Exhausting the residue of the source material through an exhaust hole provided in the source material supply module; And
And supplying a reaction gas onto the substrate moving in a direction crossing the first axis direction by using a reaction gas supply module positioned to be spaced apart from the source material supply module.
Supplying the source material,
Distributing the source material to the plurality of injection holes; And
Adjusting a supply amount of the source material supplied to the plurality of injection holes,
The plurality of injection holes are formed in the concave portion of the surface facing the substrate of the source material nozzle portion,
In the supplying of the source material thin film deposition method for supplying a larger amount of the source material than the injection hole provided in the center portion to the injection hole provided in the first axial both ends.

The method according to claim 14 or 15,
The thin film deposition method of supplying the reaction gas in a radical form by forming a plasma in the reaction gas supply module in the supplying of the reaction gas.

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