KR101488672B1 - Thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus. A thin film deposition apparatus according to the present invention includes a chamber having an evaporation space therein, a substrate support disposed inside the chamber to support a substrate, a process gas supply channel for supplying a process gas toward the substrate, At least two activation channels provided at an upper portion of the substrate and having an opening for introducing the process gas injected into the substrate and an upper portion thereof being hermetically sealed to activate the process gas and adjacent to each other, And a gas supply unit including a gas activation unit for activating the process gas in each of the activation channels.

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus, and more particularly, to an apparatus for depositing a thin film by atomic layer deposition, which can improve the quality of a thin film while preventing damage to the substrate and further improve throughput To a thin film deposition apparatus.

Conventionally, chemical vapor deposition (CVD) has been widely used as a deposition method for forming a thin film on a substrate such as a semiconductor wafer (hereinafter referred to as a substrate). Recently, atomic layer deposition (ALD) Layer Deposition) technology is attracting attention.

The basic concept of the atomic layer deposition method in the thin film deposition method will be described with reference to the drawings. Referring to FIG. 16, a basic concept of the atomic layer deposition method will be described. In atomic layer deposition, a raw material gas containing a raw material such as trimethyl aluminum (TMA) is sprayed onto a substrate, and an inert purge gas such as argon A single atomic layer is adsorbed on the substrate through the injected and unreacted material exhaust, a reactive gas including a reactant such as ozone (O ₃ ) reacting with the raw material is injected, and then an inert purge gas injection and an unreacted substance / Lt; RTI ID = 0.0 > Al-O < / RTI >

In the conventional thin film deposition apparatus used in the atomic layer deposition method, various kinds exist depending on the direction and manner of injecting various gases such as a source gas, a reactive gas, a purge gas, etc. onto the substrate surface. However, the thin film deposition apparatus using the atomic layer deposition method has a problem in that it can not satisfy both the thin film having excellent quality and the throughput of the substrate. That is, when the thin film of excellent quality is achieved, there is a disadvantage that the throughput of the substrate is remarkably low. On the other hand, when the throughput of the substrate is increased, the quality of the thin film is deteriorated. Further, when a gas activating unit such as a plasma is used to improve the throughput of the substrate, an activation gas is directly supplied to the substrate to cause damage to the substrate, or an unnecessary thin film is deposited in an area other than the substrate .

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin film deposition apparatus capable of maintaining a good quality of a thin film while significantly improving substrate throughput in order to solve the above problems. It is still another object of the present invention to provide a thin film deposition apparatus that prevents damage to a substrate when an activation gas is supplied and prevents a thin film from being deposited in an unnecessary region other than the substrate. It is still another object of the present invention to provide a thin film deposition apparatus that prevents damage to a substrate when an activation gas is supplied and prevents a thin film from being deposited in an unnecessary region other than the substrate.

It is an object of the present invention to provide an apparatus and a method for manufacturing a semiconductor device having a chamber having an evaporation space therein, a substrate support disposed inside the chamber, and a process gas supply channel for supplying a process gas toward the substrate, At least two activation channels provided at an upper portion of the substrate and having an opening for introducing the process gas injected into the substrate and an upper portion thereof being hermetically sealed to activate the process gas and adjacent to each other, And a gas supply unit including a gas activation unit for activating the process gas in the activation channel, respectively.

Here, the two or more activation channels may be provided adjacent to each other with a partition wall therebetween, and the gas activation unit may be provided on the partition to expose at least a part of the activation channel on both sides.

The gas activation unit may include a plasma electrode provided on the partition and at least a part of which is exposed to the activation channels on both sides, and a shield member provided to surround the plasma electrode.

Here, the process gas supply channel may include a first supply channel for supplying a source gas and a second supply channel for supplying a reaction gas, and the second supply channel and the activation channel may be adjacent to each other. In this case, the plurality of activation channels may be successively arranged successively in the second supply channel.

The gas activation unit may include a power supply electrode to which a predetermined voltage is applied, a shield member surrounding the power supply electrode, a ground unit including the power supply electrode and the shield member, and a ground electrode The activation channel may include a diffusion space formed on the power electrode, a first gas activation space having a height corresponding to the power source electrode, and a second gas activation space below the power source electrode.

In this case, the diffusion space may be formed to be larger than the second gas activation space. The power electrode may protrude a predetermined length from the ground toward the ground electrode. Specifically, the power electrode may protrude from the shield member by a predetermined length toward the ground electrode.

According to the present invention having the above-described configuration, various gases including a process gas are supplied while the substrate or the gas supply unit moves along a straight path, so that the deposition is uniformly performed on the surface of the substrate, thereby providing a thin film of excellent quality.

Further, the gas supply unit according to the present invention may include a plasma generating unit in the gas activation unit to improve the quality of the thin film and shorten the deposition time by providing radicals. Particularly, in the case of providing the radical, the reaction gas injected from the channel for supplying the reaction gas without supplying the reaction gas generating the radical from the upper part of the chamber to the channel provided with the plasma generating part, It is possible to provide a thin film of excellent quality while preventing the substrate from being damaged.

In addition, the thin film deposition apparatus according to the present invention maximizes the area where the reactive gas is activated to improve the quality of the thin film formed on the substrate, and further reduces the amount of the reactive gas supplied to the gas supply unit.

1 is a side sectional view showing a thin film deposition apparatus according to an embodiment,
2 is a side cross-sectional view showing the configuration of a gas supply unit according to an embodiment,
FIG. 3 is a schematic view showing an activation step of the reaction gas in FIG. 2,
4 is a cross-sectional view showing a configuration of a gas activation unit according to an embodiment,
FIGS. 5 to 12 are side cross-sectional views illustrating the configuration of a gas supply unit according to another embodiment,
13 is a sectional view showing a configuration of a gas activation unit according to another embodiment,
14 is a side cross-sectional view showing a configuration of a gas supply unit according to yet another embodiment,
15 is a schematic view showing the basic deposition concept of the thin film deposition apparatus according to the present invention,
16 is a schematic diagram showing the basic concept of a conventional ALD apparatus.

Hereinafter, a thin film deposition apparatus according to various embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a side cross-sectional view illustrating an internal structure of a thin film deposition apparatus 1000 according to an embodiment.

Referring to FIG. 1, a thin film deposition apparatus 1000 includes a chamber 110 having a predetermined space therein, in which a substrate is accommodated and a deposition operation is performed, and substrate inlet / outlet means (not shown) ). Although not shown in the drawing, a load lock chamber connected to one side of the chamber 110 and capable of switching to a vacuum or atmospheric pressure state, and a plurality of boats on which a substrate to be vapor deposited is mounted, and a plurality of You can have more boats.

The thin film deposition apparatus 1000 includes a chamber 110 having a predetermined space therein, a substrate supporter 150 disposed inside the chamber 110 to support the substrate W, a gas supply unit 200 may be provided. Here, the gas supply unit 200 includes at least one process gas supply channel (see FIG. 2, 210 and 230) for supplying a process gas toward the substrate W and a gas activation unit for activating the process gas (Refer to FIG. 2) 240 provided with the substrate supporting part 150 and the substrate supporting part 150. The substrate supporting part 150 may be configured to move relative to the substrate supporting part 150 with a predetermined distance therebetween. Further, the substrate W may include a substrate withdrawing means for withdrawing the substrate W into the chamber 110 or withdrawing the substrate W from the chamber 110.

The chamber 110 accommodates the substrate W therein to perform a deposition operation on the substrate, and provides a space for providing various components. Furthermore, it provides an environment in which a substrate processing operation such as a deposition operation or the like can be performed by keeping the inside in a vacuum state by a vacuum equipment such as a pump (not shown) for exhausting air inside.

The chamber 110 includes a chamber body 130 having an upper opening and a chamber lid 120 for opening and closing an opened upper portion of the chamber body 130. One side of the chamber body 130 has an opening 134 through which the substrate W is drawn into and drawn out of the chamber 110.

The substrate withdrawing and withdrawing means is connected to the chamber 110 to pull the substrate into the chamber 110 or to draw the substrate W having been deposited to the outside of the chamber 110. When the substrate W is increased in size, the substrate drawing-out means includes a substrate drawing portion for drawing the substrate W into the chamber 110 and a substrate drawing portion for drawing the substrate W out of the chamber 110 separately can do.

Meanwhile, the chamber lid 120 of the chamber 110 is provided with a gas supply unit 200 for supplying at least one of a process gas and a purge gas, which will be described in detail later.

In the chamber 110, a substrate support 150 on which the substrate W is mounted is provided. The substrate support 150 is provided to move relative to the gas supply 200. That is, at least one of the substrate support part 150 and the gas supply part 200 may be configured to move relative to the other at a predetermined distance. For example, the gas supply unit 200 and the substrate support unit 150 may be configured to move relative to each other, or one of the gas supply unit 200 and the substrate support unit 150 may be configured to move relative to the other . For example, the gas supply unit 200 may be fixed and configured such that the substrate support unit 150 moves or both the substrate support unit 150 and the gas supply unit 200 move.

However, in order to move the substrate W within the chamber 110 when the substrate W is enlarged or enlarged, it is necessary to increase the size of the chamber 110, which increases the footprint of the entire apparatus . Therefore, in this embodiment, the substrate W may be fixed during the deposition operation so that the deposition operation can be performed on the enlarged or large-sized substrate W, and the gas supply unit 200 may be configured to move with respect to the substrate W have. For example, the gas supply unit 200 may be provided so as to be movable linearly at a predetermined distance in a direction parallel to the substrate W. On the other hand, when the substrate W moves relatively along the linear path, the surface area of the substrate moves all at the same speed, so that there is no possibility that the thickness of the deposition varies during the deposition operation.

Meanwhile, a heating unit 170 for heating the substrate W may be provided below the substrate supporting unit 150. The heating unit 170 is provided at a lower portion spaced apart from the substrate supporting unit 150 for supporting the substrate W to heat the substrate W. [

Specifically, the heating unit 170 is provided along the movement path of the substrate supporting unit 150. The heating portion 170 may include at least one heating plate 172 and a supporting portion 174 for supporting the heating plate 172. The heating plate 172 is spaced a predetermined distance from the substrate support 150 that supports the substrate W to heat the substrate W. Hereinafter, the gas supply unit 200 will be described in detail with reference to the drawings.

FIG. 2 is an enlarged cross-sectional view of the gas supply unit 200 in FIG. 1, showing a specific configuration of the gas supply unit 200. Hereinafter, the configuration of the gas supply unit will be described in detail.

2, the gas supply unit 200 includes at least one process gas supply channel 210 and 230 for supplying a process gas toward the substrate W, and a gas activation unit 300 for activating the process gas (Not shown).

The gas activation unit 300 described in this embodiment activates the process gas to supply the process gas in the form of activated atoms or radicals. Here, the gas activating unit 300 may be provided in any one of a plasma generating unit, a microwave generating unit, an ultraviolet irradiating unit, and a laser irradiating unit.

Here, when the gas activation unit 300 is provided in the form of a very high frequency generator, the very high frequency generator activates the process gas by using a very high frequency of 10 ⁹ Hz or more. When the very high frequency generator is applied with a very high frequency, the process gas can be converted into an activated atom or a radical state and sprayed toward the substrate W.

When the gas activating unit 300 is provided in the form of an ultraviolet ray irradiating unit, the ultraviolet ray irradiated by the ultraviolet ray irradiating unit can convert the process gas into an activated atom or a radical and be injected toward the substrate W.

Further, when the gas activating unit 300 is provided in the form of a laser irradiating unit, the process gas can be converted into an activated atom or a radical state by the laser irradiated by the laser irradiating unit and sprayed toward the substrate W.

Hereinafter, the plasma activating unit 300 is assumed to be a plasma generating unit. In this case, the plasma generator may include a gas activation unit 300 that is provided in the activation channel 240 for supplying the activated process gas to activate the process gas.

The gas activation unit 300 includes a first power electrode 310 to which a predetermined voltage is applied, a shield member 312 surrounding the first power electrode 310, a first power electrode 310, And a ground electrode 246 (see FIG. 3) which is provided to be opposed to the ground electrode 241 and is grounded. Furthermore, the gas activation unit 300 may further include a ground unit 244 (see FIG. 3) having the first power electrode 310 and the shielding member 312.

Specifically, a first power supply electrode 310 is provided on the inner wall of one side of the activation channel 240, and the other side wall of the activation channel 240 is grounded to serve as a ground electrode 246. In this case, the shielding member 312 may be included on the inner wall of one side of the activation channel 240, and the first power electrode 310 may be supported by the shielding member 312. Further, since the inner wall of one side of the activation channel 240 is grounded to serve as the grounding portion 244, the current leaking from the first power source electrode 310 can be quickly discharged through the one inner wall. The first power supply electrode 310 and the gas supply unit 200 are electrically separated by the shielding member 312 so that the first power supply electrode 310 is electrically shielded from the gas supply unit 200. In this case, the shielding member 312 not only electrically shields the first power electrode 310, but also serves as a support for supporting the first power electrode 310.

The gas supply unit 200 includes a first supply channel 210 for supplying a source gas toward the substrate W and a second supply channel 230 for supplying a reaction gas toward the substrate W. [ And the reactant gas supplied from the second supply channel 230 is supplied to the activation channel 240. In addition, That is, the reaction gas is not directly supplied to the activation channel 240 provided with the gas activation unit 300, but the reaction gas supplied from the second supply channel 230 is supplied or supplied to the activation channel 240 'Indirect supply' method is adopted. The reason why the indirect supply system is adopted when the reaction gas is supplied to the gas activation unit 300 as described above in the present embodiment is as follows.

One of the process gas generally for devices that by utilizing gas activation unit to activate the process gas to perform the deposition on the substrate, and the gas activated the unit is provided with space, region or channel, such as, for example, such as O ₂ The reaction gas is directly supplied. In this case, the reactive gas is activated by the gas activating unit and supplied toward the lower substrate to perform the deposition process.

However, according to the configuration of the conventional device, since the reaction gas is directly supplied to the space, the area, or the channel provided with the gas activating unit, when the reactive gas is activated, the gas activating unit and / An undesired film may be formed on the surface. It is necessary to periodically remove the film deposited in the undesired region because the efficiency of the gas activation unit can be significantly lowered when such a film is formed, which increases the time and cost of maintenance of the deposition apparatus. In the case of the conventional apparatus, when the reaction gas is activated by the gas activation unit, a plasma is formed. The plasma includes a reactive gas in an ionic state as well as a radical state, ) May be damaged. Accordingly, in order to solve the above-described problems, the gas supply unit 200 according to the present embodiment is provided with the gas activation unit 300, So that the reactant gas supplied from the second supply channel 230 for supplying the reactant gas flows into or is supplied to the activation channel 240.

Specifically, the activation channel 240 may have an opening that is closed at the top and open toward the bottom substrate W. In this case, the upper portion of the activation channel 240 may be shielded by a cover 202 that seals the opening of the chamber lid 120. Meanwhile, in the gas supply unit 200, the second supply channel 230 and the activation channel 240 may be adjacent to each other. That is, the process gas and / or the reactive gas supplied through the lower portion of the second supply channel 230 may be supplied to the neighboring activation channel 240 with the second supply channel 230 adjacent to the activation channel 240, Respectively. The activation channel 240 is open toward the substrate W and has an opening 242 at the bottom of the activation channel 240 as shown in the figure, The process gas supplied from the second supply channel 230 is supplied to the activation channel 240 and is activated by the gas activation unit 300. Further, a process gas activated by the gas activation unit 300 is supplied onto the substrate W through the activation channel 240, and is subjected to an inactive process Thereby activating the gas.

3 is a schematic view schematically illustrating the reaction process of activating the reaction gas in the gas supply unit 200 according to the present embodiment for convenience of explanation.

3, a reactive gas, for example, O ₂ gas, supplied from a neighboring second supply channel 230 flows through an opening (not shown) formed in the lower portion of the activation channel 240 242 to the interior of the activation channel 240. The O ₂ gas introduced into the activation channel 240 is activated by the gas activation unit 300 to be converted into an ionic or radical state. The O ₂ gas thus converted to an ionic or radical state also affects the neighboring O ₂ gas, thereby converting the neighboring inactivated O ₂ gas to an ionic or radical state. Therefore, in the region A adjacent to the gas activation unit 300, the O ₂ gas directly activated by the gas activation unit 300 is present, and the region B, which is slightly spaced from the gas activation unit 300, The O ₂ gas indirectly activated by the activated gas is present in the lower region of the activation channel 240 or in the region between the activation channel 240 and the substrate W. [ Therefore, when the reaction gas is supplied toward the substrate W, it is possible to prevent damage to the substrate W by reducing the damage caused by the ions. On the other hand, since the reactive gas is not directly supplied to the activation channel 240 in the structure similar to the present embodiment, the film deposited on the gas activation unit 300 or the like can be minimized. As a result, this embodiment can solve the problems that may occur in the gas activation unit of the gas supply unit of the conventional apparatus.

4 is a side sectional view showing the structure of the gas activating unit 300. As shown in Fig.

4, the gas activation unit 300 includes a first power electrode 310 to which a predetermined voltage is applied, a shield member 312 surrounding the first power electrode 310, A grounding unit 244 including the first power electrode 310 and the shielding member 312 and a ground electrode 246 disposed to face the first power electrode 310 and grounded. The activation channel 240 is formed between the ground 244 and the ground electrode 246. Here, the activation channel 240 has an opening portion 242 in which the upper portion is blocked and the process gas is introduced into the lower portion, as shown in the figure. In this case, the grounding unit 244 is provided with the gas activating unit 300 as described above. Accordingly, the inner space of the activation channel 240 can be partitioned into three regions by the gas activation unit 300, more specifically, the first power source electrode 310. That is, a diffusion space 1400 formed on the first power source electrode 310, a first gas activation space 1500 having a height corresponding to the first power source electrode 310, and a first power source electrode 310 And a second gas activation space 1600 below the first gas activation space 1600.

The process gas introduced through the opening 242 under the activation channel 240 fills the activation channel 240 and is filled up to the diffusion space 1400 over the first power electrode 310. A part of the process gas introduced through the opening 242 is activated by the activation of the gas activation unit 300 to be converted into a radical state. However, the process gas, which has not been converted into the radical state, flows into the upper diffusion space 1400 do. In this case, the process gas distributed in the diffusion space 1400 continuously supplies the process gas to the first gas activation space 1500, so that the activated process gas can be uniformly supplied.

The first gas activation space 1500 below the diffusion space 1400 converts the process gas to an activated ion or a radical state by driving the gas activation unit 300. Accordingly, the first gas activation space 1500 may be a space in which the process gas directly activated by the gas activation unit 300 is relatively present, and corresponds to the 'A' region of FIG. 3 do. Of course, the first gas activation space 1500 may also be indirectly activated by a process gas directly radicalized. However, when the amount of the directly activated process gas and the amount of the indirectly activated process gas are compared in the first gas activation space 1500, the amount of the relatively directly activated process gas is increased.

Meanwhile, the second gas activation space 1600 under the first electrode 310 continuously receives the process gas through the lower opening 242, and further, directly activated in the first gas activation space 1500 It can be defined as a space in which a relatively large amount of process gas indirectly activated by the process gas exists. The second gas activation space 1600 corresponds to a part of the 'B' region of FIG. 3 described above.

That is, a portion of the process gas introduced through the opening 242 is converted to a radical state or an activated ion, and a part of the process gas flows into the first gas activation space 1500 or the diffusion space 1400.

In this case, the second gas activating space 1600 may also include a directly radicalized process gas. Since the first power electrode 310 protrudes toward the ground electrode 246 as described later, the protrusion 316 of the first power electrode 310 and the lower substrate W directly This is because the process gas can be activated. However, when the process gas activated in the second gas activation space 1600 is examined, the amount of the process gas indirectly activated by the directly activated process gas in the first gas activation space 1500 is relatively directly activated .

In the case where the diffusion space 1400, the first gas activation space 1500, and the second gas activation space 1600 are provided in the activation channel 240 as described above, The space 1400 may be formed to be larger than that of the second gas activation space 1600.

This is because, as described above, the process gas diffused into the diffusion space 1400 serves to supply the process gas into the first gas activation space 1500 at the bottom, thereby enabling uniform radical supply. If the size of the diffusion space 1400 is smaller than the second gas gas activation space 1600 or the diffusion space 1400 is not provided, the amount of the process gas supplied to the first gas activation space 1600 The amount of the radicals is reduced, and uniform radical supply becomes difficult.

Specifically, when the internal cross-sectional area of the activation channel 240 is substantially constant, the length L ₁ of the diffusion space 1400 is configured to be longer than the length L ₂ of the second gas activation space 1600 .

The first power electrode 310 may protrude from the ground 244 toward the ground electrode 246 by a predetermined length. More specifically, the first power electrode 310 ) is in the wraps shielding member 312 may be provided so as to protrude a predetermined length (L ₃₎ towards the ground electrode (246). Specifically, the first power electrode 310 has a protrusion 316 protruding toward the ground electrode 246.

The reason for including the protrusion 316 is to increase the radical process gas or activation ions supplied from the activation channel 240. That is, when the protrusion 316 is provided, the process gas can be directly activated between the protrusion 316 of the first power electrode 310 and the lower substrate W, so that the second gas activation space 1600 ) Can directly activate the process gas. Accordingly, the indirectly activated process gas and the directly activated process gas, which occupy a relatively large amount in the second gas activation space 1600, can be supplied together to supply more of the process gas in the radical state.

In this case, when the protruding length L ₃ of the protrusion 316 is relatively increased, the amount of the process gas directly activated in the space between the first power source electrode 310 and the substrate is increased, The amount of the process gas directly activated in the space between the first power supply electrode 310 and the substrate is extremely reduced by reducing the protruding length L ₃ of the protrusion 316 relatively. Therefore, it is important to appropriately adjust the projected length L ₃ of the projection 316. For example, the protruded length L ₃ of the protrusion 316 can be appropriately adjusted according to the size, surface area, distance between the ground electrode 246, and the like of the first power supply electrode 310, The protruding length L ₃ of the protrusion 316 may be determined to protrude from the shielding member 312 by 0.1 mm to 100 mm.

4, reference numeral 314 denotes a flow path through which a cooling fluid for cooling the first power supply electrode 310 flows.

Referring again to FIG. 2, the gas supply unit 200 includes a cover 202 for sealing the opening of the chamber lid 120.

The cover 202 is provided at an upper portion of the chamber lid 120 to seal the opening of the chamber lid 120. Therefore, although not shown in the drawings, a gasket (not shown) may be provided between the cover 202 and the chamber lid 120 for sealing. The cover 202 may be supplied with process gas to the process gas supply channels 210 and 230, which will be described in detail later, or may have various lines for gas to be exhausted.

Specifically, the cover 202 may be provided with a first supply line 410 for supplying a source gas (or 'first process gas'). The first supply line 410 is connected to a source gas supply source (not shown) to supply the source gas to the first supply channel 210 of the gas supply unit 200, which will be described later. Further, the cover 202 may further include a second supply line 430 for supplying a reactive gas (or a 'second process gas'). The second supply line 430 may be connected to a reactive gas supply source (not shown) to supply the reactive gas toward the second supply channel 230. The cover 202 may further include exhaust lines 420 and 440 for exhausting the process gas supplied from the process gas supply channels 210 and 230. The exhaust lines 420 and 440 are connected to a pumping unit (not shown) to exhaust the residual gas inside the chamber 110 by pumping the pumping unit.

As described above, the gas supply unit 200 is provided with process gas supply channels 210 and 230 for supplying a process gas, that is, a source gas and / or a reaction gas. At least one of the process gas supply channels 210 and 230 is provided in the gas supply unit 200, and preferably a plurality of process gas supply channels 210 and 230 may be provided. The process gas supply channel may include at least one first supply channel 210 for supplying a source gas and at least one second supply channel 230 for supplying a reactive gas. The gas supply unit 200 may further include exhaust channels 220 and 250 for exhausting the residual gas flowing between the substrate W and the gas supply unit 200.

The gas supply unit 200 according to the present embodiment includes the first supply channel 210 for supplying the source gas to the center and may be configured symmetrically about the first supply channel 210. Specifically, a first supply unit 212 may be provided, and a first supply channel 210 may be provided inside the first supply unit 212.

This configuration is advantageous in the case where the relative movement of the substrate W and the gas supply part 200 is a reciprocating motion reciprocating a predetermined distance. For example, even when the substrate W reciprocates along a movement path having a straight path of a predetermined length, even if the gas supply unit 200 is provided, the substrate W moves along the lower portion of the gas supply unit 200, (W) can be sufficiently deposited. In addition, when the substrate W reciprocates in one direction and the opposite direction to the one direction, the gas supply unit 200 may be disposed at the center of the first supply channel 210 It is advantageous to be symmetrically constructed.

The first supply channel 210 supplies the raw material gas to the lower substrate W through the first supply line 410 described above. The gas supply unit 200 may include a pair of first exhaust channels 220 for exhausting the raw material gas to both sides of the first supply channel 210. In order to prevent the source gas supplied from the first supply channel 210 from being mixed with the reaction gas to be described later, a pair of first exhaust channels 220 symmetrically provided around the first supply channel 210 do.

And a second supply channel 230 for supplying the reaction gas adjacent to the first exhaust channel 220. Here, the second supply channel 230 is provided symmetrically with respect to the first supply channel 210 described above. The second supply channel 230 is supplied with the reaction gas from the second supply line 430 toward the lower substrate W. Specifically, a second supply unit 232 may be provided, and a second supply channel 230 may be provided inside the second supply unit 232.

In this case, the first exhaust channel 220 is provided in the space between the first supply unit 212 and the second supply unit 232. That is, no separate unit for the first exhaust channel 220 is required, so that the material cost of the gas supply unit can be reduced, and the total volume can be reduced.

In addition, the gas supply unit 200 may include an activation channel 240 adjacent to the second supply channel 230. The activation channel 240 has an upper portion closed and an opening portion 242 formed at the lower portion thereof to have an open shape toward the substrate W. [ The activation channel 240 includes the gas activation unit 300 for activating the reaction gas as described above and the reaction gas supplied from the neighboring second supply channel 230 is supplied to the activation channel 240 through the lower opening 242, (240) to provide an activated reaction gas. Since the configuration and operation of the activation channel 240 have already been described above, repetitive description will be omitted. Accordingly, the gas supply unit 200 includes a first exhaust channel 220 for exhausting the residual gas around the first supply channel 210, and a second supply channel 230 for supplying the reactive gas. And the activation channel 240 is provided adjacent to the second supply channel 230. On the other hand, the activation channel may be provided between the first supply channel and the second supply channel, that is, between the first supply unit and the second supply unit, not shown in the figure.

The gas supply unit 200 may further include a second exhaust channel 250 for exhausting a residual gas or a reactive gas to the periphery of the activation channel 240. The reaction gas supplied from the second supply channel 230 flows into the activation channel 240 through the lower part of the activation channel 240 or may be supplied to the edge of the gas supply part 200 through the activation channel 240 have. If the reaction gas flows out to the outside from the gas supply unit 200, the efficiency of the subsequent deposition process may be lowered when the substrate W and the gas supply unit 200 perform deposition by relative movement. Accordingly, the second exhaust channel 250 is further provided at the edge of the gas supply unit 200, that is, outside the activation channel 240 to exhaust the residual gas, i.e., the supplied reaction gas.

As a result, the gas supply unit 200 is symmetrically disposed around the first supply channel 210 for supplying the raw material gas at a central portion thereof. The gas supply unit 200 includes a first exhaust channel 220, A supply channel 230 and a gas activation unit 300 to provide an activation channel 240 and a second exhaust channel 250 for activating the reaction gas.

The raw material gas supplied from the first supply channel 210 forms a single atomic layer on the substrate W and is exhausted through the first exhaust channel 220. The reactive gas supplied toward the substrate W through the second supply channel 230 moves along the upper surface of the substrate W to be supplied to the activation channel 240 through the opening 242 of the adjacent activation channel 240. [ Lt; / RTI > The reaction gas introduced into the activation channel 240 is activated by the gas activation unit 300 and the reaction gas under the activation channel 240 is also activated by the sequential reaction so that the reaction gas reacts with the source gas of the substrate W Thereby forming a thin film of a single atomic layer. Residual gas past the activation channel 240 is exhausted by the second exhaust channel 250.

The gas supply unit 200 according to FIG. 2 and FIG. 3 to FIG. 14 to be described later is characterized in that it does not supply purge gas composed of an inert gas such as argon (Ar). That is, as shown in FIG. 15, the thin film deposition apparatus ejects a raw material gas containing a raw material on a substrate, and then exhausts the unreacted residual gas through the exhaust without simply supplying an inert purge gas. By this, a single atomic layer is adsorbed on the substrate, a reactive gas including a reactant such as ozone (O ₃ ) reacting with the raw material is injected, and then unreacted material / by-product And a single atomic layer (Al-O) is formed on the substrate. Therefore, the residual gas is simply exhausted by the exhaust process and mixing of the reaction gas and the source gas is prevented, so that it is not necessary to supply the purge gas separately.

A control method of the thin film deposition apparatus 1000 having the above structure will be described as follows.

First, a thin film deposition apparatus 1000 supplies a source gas onto a substrate W by a gas supply unit 200, and the source gas is adsorbed on the substrate W. In this case, the source gas is supplied onto the substrate W through the first supply channel 210 of the gas supply unit 200. The raw material gas supplied onto the substrate W is adsorbed on the substrate W. The raw gas not adsorbed to the substrate W is exhausted to the outside by the first exhaust channel 220 of the gas supply unit 200.

Meanwhile, the reaction gas is supplied from the gas supply unit 200 onto the substrate W. In this case, the reaction gas is supplied onto the substrate W from the second supply channel 230 of the gas supply unit 200. As described above, the reaction gas is supplied to the substrate W and flows along the space between the substrate W and the gas supply part 200, and a part thereof flows into the activation channel 240.

Here, the reactive gas injected onto the substrate W and flowing between the substrate W and the gas supply unit 200 is activated. The activation step may include a first activation step of first activating the reaction gas by the gas activation unit 300 provided in the gas supply unit 200 and a second activation step of activating the reaction gas activated in the first activation step, And a second activating step of secondarily activating the reaction gas flowing between the gas supply part (200). That is, in the first activation step, the reactive gas introduced into the activation channel 240 is directly activated by the gas activation unit 300. In the second activation step, the reactant gas activated in the first activation step indirectly activates the deactivated reactant gas flowing between the substrate W and the gas supply unit 200.

Next, the secondary indirectly activated reaction gas chemically reacts with the raw material gas adsorbed on the substrate W to deposit a thin film of a single atomic layer. The remaining gas after the thin film is deposited is exhausted by the second exhaust channel 250. At least one of the substrate W and the gas supply unit 200 is moved relative to the other substrate W in each step.

Meanwhile, the atomic layer deposition is trimethyl aluminum on the substrate, by injecting a material gas, such as _{(TMA TriMethyl Aluminium (CH 3)} 3 Al, hereinafter 'TMA'") to adsorb single atomic layer on the substrate, the material and the reaction A reaction gas containing a reactant such as ozone (O ₃ ) is injected to form a single atomic layer (Al-O) on the substrate. Accordingly, in the atomic layer deposition method, it is important to regulate the amount of the process gas to be supplied, and in particular, it is important to control the supply amount of the TMA which is the source gas. That is, atomic layer deposition forms a single atomic layer by a single deposition process, and this deposition process is repeated to form a thin film of desired thickness. If a plurality of atomic layers are formed instead of a single atomic layer by a single deposition process, the quality of the thin film can not be guaranteed and it is difficult to control the thickness of the thin film according to the number of times of the deposition process. In order to form the single atom layer, it is important that the supply amount of the TMA is not supplied more than the supply flow rate required during the deposition process in the case of supplying the raw material gas TMA. If the amount of TMA is supplied above the supply flow rate, a plurality of atomic layers may be formed on the substrate, because it forms a thin film of a multi-atomic layer instead of a single atomic layer.

In order to supply the TMA below the supply flow rate, the source gas supply source or the first supply line for supplying the raw material gas TMA must be adjusted. However, since the TMA is pressurized and supplied by the vapor pressure, it may be difficult to reduce the supply amount to less than the supply flow rate. Furthermore, in the case of a thin film deposition apparatus by atomic layer deposition, it is important that the source gas and the reactive gas supplied toward the substrate W are not directly mixed with each other. Accordingly, an embodiment having a process gas guide unit capable of adjusting the supply amount of the raw material gas TMA and controlling the injection direction of the process gas to prevent mixing of the source gas and the reaction gas will be described below.

The process gas guide unit may include at least one of a first guide unit 500 (see FIG. 5) for controlling the injection direction of the raw material gas and a second guide unit 600 (see FIG. 7) for controlling the injection direction of the reactive gas . Hereinafter, the present invention will be described in detail.

5 is a side cross-sectional view showing a configuration of a gas supply unit according to another embodiment. There is a difference in that the first guide part 500 is further provided below the first supply channel 210 as compared with the above-described embodiments. Hereinafter, the differences will be mainly discussed.

Referring to FIG. 5, the gas supply unit 200 according to the present embodiment includes a first guide unit 500 capable of adjusting the injection direction of the raw material gas so as to adjust the injection amount or the supply amount of the raw material gas to the substrate W, As shown in FIG.

For example, the length of the first supply channel 210 may be shorter than the length of the first exhaust channel 220, and the first guide unit 500 may include a first supply channel 210, 1 supply unit 212 in a direction perpendicular to the first supply channel 210. In this case, the first exhaust channel 220 for exhausting the supplied raw material gas is provided on both sides of the first supply channel 210, and the first guide part 500 and the inner wall of the first exhaust channel 220 And the outer wall of the second supply unit 232). Accordingly, the raw material gas supplied through the first supply channel 210 is bent in the direction by the first guide unit 500, and a relatively large amount of the raw gas is exhausted through the first exhaust channel 220, A small amount is supplied toward the lower substrate W through the supply slit 505. [ As a result, the first guide unit 500 is provided below the first supply unit 212 to adjust the injection direction of the raw material gas fed toward the substrate W, thereby reducing the supply amount of the raw material gas.

6 is a view showing a configuration of the first guide unit 510 according to another embodiment. There is a difference in that the first guide portion 510 is formed at the end of the first exhaust channel 220 at a distance from the first supply unit 212 as compared with the embodiment of FIG. In this case, the first guide unit 510 may have a shape extending toward the first supply channel 210 at the end of the first exhaust channel 220, that is, at the end of the second supply unit 232.

6, the length of the first supply channel 210 may be shorter than the length of the first exhaust channel 220, and the first guide unit 510 may be shorter than the length of the second supply unit 232 And may protrude from the outer wall toward the first supply channel 210. A pair of first guide portions 510 are formed on the outer wall of the second supply unit 232 so as to protrude toward the first supply channels 210 respectively and the space between the pair of first guide portions 510 is filled with the raw material gas As a feed slit 512 for feeding the feed slit. The raw material gas supplied from the first supply channel 210 is diffused into the space between the first supply channel 210 and the first guide unit 510 and a relatively large amount of the raw gas is supplied to the first exhaust channel 220 And a relatively small amount is supplied to the substrate W through the supply slit 512. [

The first guide units 500 and 510 may be integrally formed with the first supply unit 212 forming the first supply channel 210 or may be formed as separate members, (Not shown).

FIGS. 7 to 10 illustrate the structure of a gas supply unit according to another embodiment for preventing the mixing of the reaction gas and the source gas and guiding the spraying direction of the reaction gas and / or the source gas. The gas supply unit 200 includes a second guide unit 600 for preventing the reaction gas supplied from the second supply channel 230 from mixing with the source gas and guiding the reaction gas toward the activation channel 240, As shown in FIG. 7 to 9 show an embodiment in which the second guide part 600 is further provided in the gas supply part of Figs. 2, 5 and 6, respectively. 10, the length of the first supply channel 210 is set to be shorter than the length of the first exhaust channel 220 so that the raw gas and the reactive gas are not directly mixed with each other. Further, Section 600. In the embodiment shown in FIG.

7 to 10, the second guide unit 600 is provided at the end of the second supply unit 232 forming the second supply channel 230 for supplying the reaction gas, and the second supply channel 230 so that the flow channel of the reaction gas supplied from the gas supply channel 230 is directed toward the activation channel 240.

The second guide unit 600 may protrude from the second supply unit 232 including the second supply channel 230 toward the activation channel 240 by a predetermined length. Thereby, the reaction gas supplied from the second supply channel 230 is directed to the activation channel 240 without being mixed with the source gas. The second guide unit 600 may be integrally formed with the second supply unit 232 forming the second supply channel 230 or may be formed as a separate member so as to be connected to the second supply unit 232 Lt; / RTI > 8 and 9, the first guide portions 500 and 510 have already been described, and a repetitive description thereof will be omitted.

11 is a side sectional view showing a gas supply unit 200 according to another embodiment. Compared with the gas supply unit according to the above-described embodiments, there is a difference in that only one but not one pair of the first exhaust channels 220 for exhausting the raw material gas is provided. Hereinafter, differences will be mainly described.

Referring to FIG. 11, the gas supply unit 200 includes a first supply channel 210 for supplying the source gas, and a first exhaust channel 220 is disposed on one side of the first supply channel 210 In this case, the first exhaust channel 220 is provided between the first supply channel 210 and the second supply channel 230A. A first exhaust channel 220 is provided between a first supply unit 212 including a first supply channel 210 and a second supply unit 232A including a second supply channel 230A do. Further, one or more second supply channels 230A and 230B for supplying the reaction gas and a second exhaust channel 250 disposed on one side of the second supply channel 230A and 230B for exhausting the residual gas are provided. In this case, the end of the first exhaust channel 220 may communicate with the end of the first supply channel 210. In addition, the second supply channels 230A and 230B and the second exhaust channel 250 may be disposed symmetrically with respect to the first supply channel 210.

Specifically, the first exhaust channel 220 for exhausting the raw material gas is provided at one side of the first supply channel 210 for supplying the raw material gas, which is one of the process gases. That is, unlike the above-described embodiments, in this embodiment, a pair of exhaust channels are not provided on both sides of the first supply channel 210, but only one side of the first exhaust channel 220 ). Although it is shown in the drawing that the first exhaust channel 220 is provided on the right side of the first supply channel 210, the present invention is not limited thereto and may be provided on the left side of the first supply channel 210.

Meanwhile, the first supply channel 210 and the at least one second supply channel 230B may be in contact with each other. That is, when the first exhaust channel 220 is provided with only one exhaust channel 220, the first and second supply channels 210 and 230B are in contact with each other And more specifically a first supply unit 212 including a first supply channel 210 and a second supply unit 232B including a second supply channel 230B are provided in contact with each other. In addition, the other side of the first supply channel 210 in which the first exhaust channel 220 is not provided, that is, the other side of the first supply channel 210 and the second supply channel 230B, Is not provided. If the exhaust channel is provided only on one side of the first supply channel 210, the overall configuration of the gas supply unit 200 can be further simplified, thereby reducing the overall volume of the gas supply unit 200 .

The first exhaust channel 220 is provided only on the right side of the first supply channel 210 as shown in the drawing, for example, The exhaust of the raw material gas may not be smooth depending on the moving direction of the raw material gas. 11, when the gas supply unit 200 is moved to the left (when the substrate W moves to the right), the source gas supplied from the first supply channel 210 is relatively discharged from the first exhaust And is smoothly exhausted to the channel 220. On the other hand, when the gas supply unit 200 moves to the right (when the substrate W moves to the left), the raw material gas supplied from the first supply channel 210 relatively moves to the first exhaust channel 220 The exhaust gas can not be exhausted smoothly. Accordingly, in the present embodiment, the first guide part 520 may be provided according to another embodiment for changing the flow direction of the raw material gas supplied from the first supply channel 210.

The first guide part 520 shown in Fig. 11 is different from the first guide part of Figs. 5 and 6 in that the first guide part 520 is formed at the end of the first supply unit 212 forming the first supply channel 210 1 exhaust channel 220 in a vertical direction or at an angle. Although the first guide unit 520 is shown extending from the end of the first supply channel 210 in the vertical direction toward the first exhaust channel 220, the first guide unit 520 is not limited to this, and may be formed to be inclined upward or downward . Therefore, the direction in which the raw material gas is supplied or the angle at which the raw material gas is supplied toward the substrate W can be adjusted according to the inclined angle of the first guide portion 520. The first guide part 520 may be integrally formed with the first supply unit 212 forming the first supply channel 210 or may be formed as a separate member so as to be connected to the first supply unit 212 Lt; / RTI >

The raw material gas supplied from the first supply channel 210 is switched by the first guide unit 520 so that the flow direction is directed toward the first exhaust channel 220, 220, and a relatively small amount is supplied toward the substrate W. As a result, the flow direction of the raw material gas can be changed by the first guide unit 520, so that the exhaust gas can be more smoothly discharged. Further, the amount of the raw material gas supplied toward the substrate can be reduced, Process can be performed. Meanwhile, the first guide unit 520 may be formed at an end of the first exhaust channel 220, spaced apart from the first supply unit 212. [ In this case, it may have a shape extending from the end of the first exhaust channel 220 toward the first supply channel 210.

The gas supply unit 200 includes a first supply channel 210 for supplying a raw material gas to the center and a first exhaust channel 220 for exhausting residual gas, The first exhaust gas channel 210 and the first exhaust gas channel 220 may be symmetrically arranged. That is, the second supply channels 230A and 230B for supplying the reaction gas, the activation channel 240 having the gas activation unit 300 and the second exhaust channel 250 are similar to the above-described embodiment, The description is omitted. Further, the present gas supply unit 200 may include the second guide unit 600 described above. Since the second guide part 600 has been described above, repetitive description will be omitted.

12 is a side cross-sectional view showing a gas supply unit 200 according to another embodiment. In comparison with the gas supply unit according to the above-described embodiments, there is a difference in that a plurality of activation channels for activating the reaction gas are provided. Hereinafter, differences will be mainly described.

Referring to FIG. 12, the apparatus for depositing a thin film according to the present embodiment includes a chamber 110 having a deposition space therein, a substrate support 150 provided inside the chamber to support the substrate, and a process gas And a gas supply unit 200 having a process gas supply channel for supplying the process gas. However, in this embodiment, there are differences in that a plurality of activation channels for activating the reaction gas are provided.

Specifically, in the thin film deposition apparatus according to the present embodiment, the gas supply unit 200 includes an opening 1242 through which the process gas injected from the process gas supply channel into the substrate flows, And a gas activation unit 1300 which is provided between the adjacent two or more activation channels and activates the process gas in each of the activation channels, .

That is, in this embodiment, a plurality of activation channels are provided when the activation channel for activating the reaction gas is provided. In this case, as the number of the activation channels increases, the area for activating the reactive gas is widened, thereby improving the quality of the thin film formed on the substrate. Also, when only one activation channel is provided, a case occurs in which the reaction gas supplied from the second supply channel is not activated in the activation channel but passes through the second supply channel and is immediately exhausted to the second exhaust channel. This may require significantly more reactive gas than the amount used in the actual process, since the reactive gas is not activated and is immediately vented. However, in the present embodiment, a plurality of activation channels are provided so that even when the reaction gas passes the first activation channel, the activation gas can be activated in the second activation channel to increase the rate of activation of the reaction gas, Can be reduced compared to the examples.

Hereinafter, the process gas supply channel may include a first supply channel 210 for supplying a source gas and a second supply channel 230 for supplying a reactive gas. Further, the process gas supply channel may include a first supply channel And a plurality of activation channels 1240A and 1240B for activating the reaction gas. The first exhaust channel 220 exhausts the source gas supplied from the first exhaust channel 210, and the plurality of activation channels 1240A and 1240B activate the reaction gas. The activation channels 1240A and 1240B are similar to those of the above-described embodiment in that an opening 1242 through which the reaction gas injected into the lower portion thereof flows is provided at the lower portion and the upper portion is closed, and a repetitive description thereof will be omitted.

The plurality of activation channels 1240A and 1240B may be adjacent to each other, for example, adjacent to each other with a partition 1100 therebetween. The partition walls 1100 partition the activation channels 1240A and 1240B from each other. Meanwhile, although the figure shows an embodiment in which two activation channels 1240A and 1240B are partitioned by one partition 1100, the present invention is not limited thereto. For example, the activation channels 1240A and 1240B may have three or more activation channels, It is of course possible that a partition is provided between the activation channels.

Meanwhile, the partition walls may include a gas activation unit 1300. The gas activation unit 1300 serves to activate the reaction gas supplied into the activation channels 1240A and 1240B. However, if a plurality of activation channels are provided and each activation channel is provided with a separate gas activation unit, not only the configuration of the gas supply unit becomes complicated, but also it takes a long time to assemble the gas activation unit, do. Therefore, in this embodiment, the adjacent activation channels 1240A and 1240B do not have separate gas activation units, but have gas activation units that can be commonly used. That is, in the case of a pair of adjacent activation channels 1240A and 1240B, the single gas activation unit 1300 activates the reaction gas in each activation channel 1240A and 1240B.

For this, the gas activation unit 1300 may be provided in the partition 1100 so that at least a part of the activation channels 1340 may be exposed through the activation channels 1240A and 1240B on both sides. In this case, when the gas activating unit 1300 is formed of a plasma generating unit, the gas activating unit 1300 is provided in the partition 1100 so that at least a part of the gas exposing unit 1300 exposed to the activation channels 1240A and 1240B And a shielding member 1310 which surrounds the second power source electrode 1312 and the second power source electrode 1312.

The second power source electrode 1312 is supplied with a predetermined power and the inner walls of the activation channels 1240A and 1240B opposed to the second power source electrode 1312 are grounded to serve as a ground electrode . Further, the barrier ribs 1100 are grounded to serve as a ground portion.

In this case, the second power source electrode 1312 is formed on the barrier rib 1100 so that at least a part of the second power source electrode 1312 is exposed through a pair of the activation channels 1240A and 1240B. In this case, a shielding member 1310 surrounding the second power source electrode 1312 is provided to isolate the second power source electrode 1312 from the barrier rib 1100.

Since the second power supply electrode 1312, the shielding member 1310 and the grounding electrode of the partition 1100 constituting the gas activating unit 1300 are described in detail with reference to FIGS. 3 and 4 Repeated explanations are omitted.

On the other hand, Fig. 13 is a side sectional view showing the structure of the gas activating unit 1300 in Fig. 12 described above.

13, the gas activation unit 1300 includes a second power source electrode 1312 to which a predetermined voltage is applied, a shield member 1310 surrounding the second power source electrode 1312, A partition wall 1100 provided with the second power source electrode 1312 and a shield member 1310 and a ground electrode 1246 disposed to face the second power source electrode 1313 and grounded. The activation channels 1240A and 1240B are formed between the barrier rib 1100 and the ground electrode 1246.

In this case, the partition walls 1100 are provided with the gas activation unit 300, and the inner spaces of the activation channels 1240A and 1240B are formed in the diffusion spaces 1400A and 1400B, the first gas activation spaces 1500A and 1500B, It is partitioned into the gas activation spaces 1600A and 1600B similar to the description of Fig. 4 described above. 13 is different in that the partition 1100 functions as a ground and has a pair of activation channels 1240A and 1240B on both sides of the partition 1100. [ The second power electrode 1312 includes a protrusion 1316 to extend toward the ground electrode 1246 toward the ground electrode 1246 from the partition 1100 and more specifically from the shield member 1310 toward the ground electrode 1246. [ It is also similar to the description of FIG. 4 in that it is provided so as to protrude the length L ₃ . Therefore, the description of each component in FIG. 13 is redundant with the description of FIG. 4 and will not be repeated.

12, when the reaction gas is activated within the pair of activation channels 1240A and 1240B adjacent to each other with the partition 1100 interposed therebetween, And activates the reaction gas by one gas activation unit 1300 that has been activated. As a result, the number of gas activation units required can be significantly reduced compared to the case of having separate gas activation units corresponding to the number of activation channels 1240A, 1240B. Thereby, the configuration of the gas supply unit can be simplified, and the assembly time and cost can be significantly reduced.

The second supply channel 230 and the activation channels 1240A and 1240B may be adjacent to each other and the plurality of activation channels 1240A and 1240B may be sequentially arranged in the second supply channel 230. [ As shown in Fig. A plurality of activation channels 1240A and 1240B are sequentially and continuously arranged in the second supply channel 230 so that the reaction gas supplied from the second supply channel 230 is not activated in the first activation channel 1240A, Lt; RTI ID = 0.0 > 1240B < / RTI >

The gas supply unit 200 includes a second exhaust channel 250 for exhausting the reaction gas supplied from the second supply channel 230 and the second exhaust channel 250 includes activation channels 1240A and 1240B . Accordingly, the plurality of activation channels 1240A and 1240B may be provided between the second supply channel 230 and the exhaust channel 250. [ With this configuration, the reaction gas supplied from the second supply channel 230 is supplied to the first activation channel 1240A to be activated, and the reaction gas which has not been activated but is excessively passed through the first activation channel 1240A, And then supplied to the subsequent second activation channel 1240B to be activated. In addition, the reaction gas or residual reaction gas that has passed through the second activation channel 1240B is exhausted to the outside through the second exhaust channel 250.

14, when a plurality of the activation channels 1240A and 1240B are provided as described above, the reaction gas supplied from the second supply channel 230 is supplied to the activation channels 1240A and 1240B And a process gas guiding part for guiding the gas guiding part toward the gas guide part. For example, the second guide unit 600 may be provided to adjust the supply direction of the reaction gas. The second guide part 600 is provided substantially perpendicular to the lower part of the second supply channel 230 and extends toward the activation channels 1240A and 1240B. Since the second guide portion 600 has been described above, repetitive description will be omitted.

On the other hand, the configuration of the gas supply unit according to FIG. 12 is applicable to the gas supply unit according to the embodiment shown in FIG. 2 as well as to the gas supply unit according to FIGS. Further, the present invention is applicable to a case where the gas supply portion is not a symmetrical configuration as shown in FIG. Further, it is needless to say that the number of the activation channels is not limited to the embodiment shown in FIG. 12, and may have a number of three or more.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. You can do it. It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

110 ... chamber 200 ... gas supply section
210 ... first supply channel 220 ... first exhaust channel
230 ... second supply channel 240 ... active channel
250 ... second exhaust channel 300 ... gas activation unit
500 ... first guide part 600 ... second guide part
1000 ... Thin Film Deposition Device

Claims (9)

A chamber having a deposition space therein;
A substrate support disposed within the chamber and on which the substrate is mounted; And
A process gas supply channel for supplying a process gas toward the substrate and an opening portion through which the process gas injected into the substrate flows into the process gas supply channel at a lower portion thereof and an upper portion thereof is closed to activate the process gas, And a gas supply unit provided between the at least two activation channels and including a gas activation unit for activating the process gas in each of the activation channels,
Wherein the two or more activation channels are provided adjacent to each other with a partition wall therebetween, and the gas activation unit is provided on the partition to be exposed to the activation channels on both sides. delete The method according to claim 1,
Wherein the gas activation unit comprises a plasma electrode provided on the partition and exposed to the activation channels on both sides, and a shield member provided to surround the plasma electrode. The method according to claim 1,
Wherein the process gas supply channel includes a first supply channel for supplying a source gas and a second supply channel for supplying a reactive gas, wherein the second supply channel and the activation channel are adjacent to each other. . 5. The method of claim 4,
Wherein the at least two activation channels are sequentially disposed successively in the second supply channel. The method according to claim 1,
Wherein the gas activating unit includes a power supply electrode to which a voltage is applied, a shield member surrounding the power supply electrode, a ground unit including the power supply electrode and the shield member, and a ground electrode that is provided to face the power supply electrode,
Wherein the activation channel includes a diffusion space formed on the power electrode, a first gas activation space having a height corresponding to the power source electrode, and a second gas activation space below the power source electrode. The method according to claim 6,
Wherein the diffusion space is formed to be larger than that of the second gas activation space. The method according to claim 6,
Wherein the power electrode protrudes from the grounding portion toward the ground electrode. The method according to claim 6,
Wherein the power electrode protrudes from the shielding member toward the ground electrode.

Images