KR20130133487A - Atomic layer deposition system and method thereof - Google Patents

Abstract

Disclosed are an atomic layer deposition apparatus and an atomic layer deposition method. According to an embodiment of the present invention, the atomic layer deposition apparatus comprises: an atomic layer deposition chamber unit, where an opening for accessing a substrate is prepared, and a susceptor for supporting the susceptor is installed in an inside, for providing one either a raw material precursor or a reaction precursor for supplying a deposition material; a scanning cathode unit, which is installed in an inside of the atomic layer deposition chamber unit, for arranging the deposition material on top of each other in the substrate by discharging the other either a raw material precursor or a reaction precursor while being moved along the substrate; and a cathode driving unit, which is installed inside the atomic layer deposition chamber unit, for moving the scanning cathode unit.

Description

TECHNICAL FIELD The present invention relates to an atomic layer deposition apparatus and a deposition method thereof,

The present invention relates to an atomic layer deposition apparatus and a deposition method thereof. More particularly, the present invention relates to an atomic layer deposition apparatus and a deposition method thereof. More particularly, the present invention relates to an atomic layer deposition apparatus and a deposition method thereof that deposit a layer of a raw material precursor on a substrate, To an atomic layer deposition apparatus capable of depositing a desired thickness of a thin film by repeating a series of processes and a deposition method thereof.

In the atomic layer deposition method, the gases of the reaction source material are flowed into the reaction tube periodically crossing each other at regular time intervals, whereby the material is grown in such a manner that one atomic layer is successively grown in each reaction step.

The atomic layer deposition method includes a showerhead method in which a substrate is uniformly sprayed on a substrate to be deposited thereon, and a traveling wave method in which the substrate is discharged from one end of the substrate to the other end of the substrate.

Deposition through atomic layer deposition (ALD) has the advantage that the thickness can be controlled more precisely than the conventional deposition method at the atomic layer level in the thickness control. On the other hand, the atomic layer deposition method requires a repetitive cycle of the process because the thin film on the substrate can only play a given role if it is thicker than a certain thickness.

That is, the deposition layer through the atomic layer deposition (ALD) has a disadvantage in that the thickness of the deposition layer is slow. However, the number of cycles to be formed in order to form the multilayer deposition film in the atomic layer deposition chamber The final thickness of the film formation layer can be precisely controlled.

These atomic layer deposition methods are mainly used for thin film uniformity, thin film characteristics improvement, and fine patterns and high-permittivity material deposition in a semiconductor process. The atomic layer deposition apparatus for performing atomic layer deposition has a shower head for uniform injection of gas A flow rate control device (MFC) and a valve for periodically supplying a process gas or a purge gas, a susceptor for heating while supporting the substrate, and an exhaust port for exhausting the process gas.

However, despite the advantages of the conventional atomic layer deposition apparatus, the throughput of the display due to the increase of the volume due to the large area, the throughput due to the increase of the purge time, the problem of the large area uniformity, Due to various mechanical stability problems, practical application was difficult.

That is, when the atomic layer deposition apparatus used in the semiconductor is used as it is in the large-area display process, the throughput is reduced due to the increase in the deposition time and the purge time due to the increase in the volume due to the large area, the uniformity of the deposited thin- There is a problem that the cost increase and the yield reduction of the product are expected due to the mechanical stability problem due to the enlargement.

[Patent Document 1] Korean Patent Application No. 10-2000-52436

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a semiconductor device, which is excellent in throughput despite the increase in deposition time and purge time due to the increase in volume due to a large area, And to provide an atomic layer deposition apparatus and a deposition method thereof capable of ensuring mechanical stability upon enlargement.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: providing an opening through which a substrate enters and exits; a susceptor for supporting the substrate; Chamber unit; A scanning cathode unit disposed inside the atomic layer deposition chamber unit for emitting the other of the raw material precursor and the reaction precursor while moving along the substrate to deposit the deposition material on the substrate; And a cathode driving unit installed inside the atomic layer deposition chamber unit to move the scanning cathode unit.

The scanning cathode unit may include a cathode part spaced from the substrate and coupled to the cathode driving unit and supplying the plasma to the other of the raw material precursor and the reaction precursor supplied on the substrate.

The scanning cathode unit may further include a scan material supply unit installed in the atomic layer deposition chamber unit and connected to the cathode unit and supplying the other of the raw material precursor and the reaction precursor to the cathode unit.

The scanning cathode unit includes a deposition material supply line embedded in the scan material supply unit to supply the cathode precursor and the reaction precursor to the cathode unit; And a purge gas supply line embedded in the scan material supply unit to supply purge gas to the cathode unit.

The cathode portion includes a cathode body; And a cathode block coupled to the cathode body and having a deposition material supply unit connected to the deposition material supply line and the purge gas supply line, respectively, and a purge gas supply unit.

The cathode block may be provided with a plasma reaction unit in which a plasma is generated.

The plasma reaction unit may be provided by a groove shape.

The plasma processing apparatus may further include a heat source provided inside the atomic layer deposition chamber unit and generating a plasma by heat in the plasma reaction unit.

The cathode block may be provided with a deposition material discharge unit for discharging another one of the reaction precursor and the raw precursor supplied from the deposition material supply unit and spaced apart from the deposition material supply unit.

The purge gas supply unit may be disposed to face the substrate, and may be disposed to surround the deposition material supply unit, spaced apart from the plasma reaction unit.

The cathode unit includes: an electrode unit for generating plasma in the plasma reaction unit of the cathode block; And a power supply unit connected to the electrode unit to supply electricity.

The cathode portion may further include an electrode insulating portion for insulating the electrode portion.

Wherein the scan material supply unit includes a plurality of joints coupled to one region of the cathode unit and folded when the cathode unit moves; And a transport support provided in the atomic layer deposition chamber unit to which the box joints are rotatably coupled.

The plurality of cathode joints may be connected to the transfer support which is disposed alternately on one side and the other side of the atomic layer deposition chamber unit along the susceptor.

The cathode driving unit may include a linear motor coupled to the atomic layer deposition chamber unit and the cathode unit to move the cathode unit.

The cathode driving unit may include: a reciprocating roller unit spaced apart from the atomic layer deposition chamber unit with the susceptor interposed therebetween; A reciprocating unit movably mounted on the reciprocating roller unit and coupled to the cathode unit; And a cover unit coupled to the reciprocating unit and surrounding the reciprocating roller unit.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a substrate being carried on one surface of an atomic layer deposition chamber unit and supported on a susceptor; Supplying any one of a raw material precursor and a reaction precursor to the inside of the atomic layer deposition chamber unit; And performing atomic layer deposition in a scanning manner by relatively moving the scanning cathode unit that supplies the other of the source precursor and the reaction precursor to the substrate in a predetermined region on the substrate .

The performing of the atomic layer deposition may further include providing a plasma to the other one of the raw material precursor and the reaction precursor.

The performing of the atomic layer deposition may further include supplying purge gas adjacent to a region where the source precursor and the reaction precursor are supplied.

Wherein the step of performing the atomic layer deposition is a step of performing atomic layer deposition in a scanning manner while the cathode driving unit moves the scanning cathode unit, wherein the scanning cathode unit comprises: A cathode for supplying a plasma to the other of the raw material precursor and the reaction precursor supplied on the substrate; And a purge gas supply line for supplying a purge gas to the cathode part, the deposition material supply line being connected to the cathode part and being provided in the atomic layer deposition chamber unit and supplying the other of the source precursor and the reaction precursor, Wherein the scan material supply unit includes a plurality of joints coupled to one region of the cathode unit and folded when the cathode unit moves; And a transport support provided in the atomic layer deposition chamber unit to which the box joints are rotatably coupled.

According to the present invention, in a state where any one of the raw material precursor and the reaction precursor is supplied to the atomic layer deposition chamber unit, the scanning cathode unit moves on the substrate in a scanning manner, and the other one of the raw material precursor and the reaction precursor is continuously To form a deposition material on the substrate by reacting with the precursor supplied by the predetermined region of the emission precursor to form an evaporation material and to form a deposition layer on the substrate so that the deposition time and the purge time increase due to the increase in the volume due to the large area, ), The uniformity of the deposited thin film is excellent in a large area, and mechanical stability can be ensured by the enlargement.

FIG. 1 is a perspective view illustrating an inside of an atomic layer deposition apparatus according to an embodiment of the present invention.
1A and 1B are cross-sectional views of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a plan view of Fig.
3 is a perspective view of the scanning cathode unit of FIG.
4 is a cross-sectional view taken along the line I-I of the cathode portion of FIG.
4A, 4B and 4C are cross-sectional views taken along the line I-I of FIG. 3, respectively, according to another embodiment.
5 is a cross-sectional view taken along the line I-I of the cathode portion of FIG. 3 according to yet another embodiment.
FIG. 6 is a cross-sectional view taken along the line I-I of the cathode section of FIG. 3 with an exhaust section according to another embodiment. FIG.
7 is a sectional view taken along the line I-I in the cathode section of FIG. 3, in which a raw material precursor supply section according to another embodiment is added.
8 is a moving state diagram of a single scanning cathode unit of an atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 9 is a layout diagram of a reaction precursor, a purge gas, an exhaust part, and a raw material precursor for the single row scanning cathode unit of Fig. 8; Fig.
FIG. 10 is a collective moving view of a plurality of scanning cathode units of an atomic layer deposition apparatus according to an embodiment of the present invention.
11 is a sequential moving view of a plurality of scanning cathode units of an atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 12 is a layout diagram of a raw material precursor, a reaction precursor, a purge gas, and an exhaust portion for the plurality of scanning cathode units shown in Figs. 10 and 11. Fig.
13 is a cross-sectional view of a cathode driving unit using a linear motor of an atomic layer deposition apparatus according to an embodiment of the present invention.
14 is a cross-sectional view of a cathode driving unit using a reciprocating roller portion and a reciprocating portion of an atomic layer deposition apparatus according to an embodiment of the present invention.
15 is a cross-sectional view of a purge gas supply nozzle of a gap regulating unit applied to a purge gas supply unit of an atomic layer deposition apparatus according to an embodiment of the present invention.
16 is a cross-sectional view showing a gap sensor of a gap adjusting unit provided in a purge gas supply portion of an atomic layer deposition apparatus according to an embodiment of the present invention.
17 is a cross-sectional view of a gap adjusting unit provided with a floating nozzle and a gap pressure sensor in a purge gas supply part of an atomic layer deposition apparatus according to an embodiment of the present invention.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements. Hereinafter, various substrates for fabricating large-area panels such as OLED display panels and solar panels, as well as glass substrates, can be used as the substrate. The reaction precursor, atomic precursor, and plasma for atomic layer deposition are indicated by reference numerals of R, S, and PL, respectively. The direction of flow of each gas is indicated by an arrow. Together. Among the terms used in this embodiment, the deposition material generally refers to a reaction precursor, a raw material precursor, or a product produced by a chemical reaction between a reaction precursor and a raw material precursor.

FIG. 1 is a perspective view showing the inside of an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view of FIG. 1, FIG. 3 is a perspective view of the scanning cathode unit of FIG. 3 is a cross-sectional view taken along line I-I of FIG.

1 to 4, an atomic layer deposition apparatus according to an embodiment of the present invention includes an opening 102 through which a substrate 101 is introduced and removed, and a susceptor (not shown) An atomic layer deposition chamber unit 100 in which an atomic layer deposition chamber unit 103 is provided and a raw material precursor and a reaction precursor for supplying a deposition material on the substrate 101 are supplied, A scanning cathode unit 110 installed on the substrate 101 and discharging another one of the raw material precursor and the reaction precursor while moving along the substrate 101 to deposit an evaporation material on the substrate 101; And a cathode driving unit 170 installed on the scanning cathode unit 110 to move the scanning cathode unit 110.

At this time, any one of the raw material precursor and the reaction precursor can be sufficiently supplied to the atomic layer deposition chamber unit 100 at a predetermined pressure so as to be adsorbed to the substrate. In addition, as shown in FIGS. 1A and 1B, May be supplied to flow from the upper side of one side of the unit 100 to the lower side of the other side.

The atomic layer deposition chamber unit 100 shown in FIGS. 1A and 2A is a case where either the raw material precursor or the reaction precursor is uniformly supplied onto the substrate from the upper center or the upper outer periphery, and then flows to the lower portion of the substrate and is discharged. S / R is an indication that the other of the source precursor and the reactor precursor can be fed from the scanning cathode unit 110.

In other words, a supply port 105 for supplying any one of the raw material precursor and the reaction precursor is provided on one side of the atomic layer deposition chamber unit 100, and an exhaust port 106 for sucking any one of the raw material precursor and the reaction precursor is provided on the other side. Can be installed. At this time, either the raw material precursor or the reaction precursor may be supplied continuously or intermittently on the substrate of the atomic layer deposition chamber unit 100 by an amount required for deposition.

A supply panel 107 having a spray hole 108 may be provided on the upper part of the atomic layer deposition chamber unit 100 to uniformly supply the raw precursor and the reaction precursor on the substrate.

The atomic layer deposition chamber unit 100 has a rectangular parallelepiped shape in which the substrate 101 is supported on the susceptor 103 to provide a deposition space for vapor deposition, An opening 102 for entering and exiting the substrate 101 which is opened and closed by a gate valve (not shown) or the like is formed.

At this time, the atomic layer deposition chamber unit 100 is a cluster-type atomic layer deposition in which the substrate is moved to a plurality of chamber units (not shown) around which a chamber unit (not shown) is disposed, It can be placed in an in-line atomic layer deposition process facility in which not only can be disposed in a process facility but also a plurality of chamber units in which a substrate is arranged in a line are moved while the process is performed. In this case, the position of the opening 102 of the atomic layer deposition chamber unit 100 can be variously changed depending on whether the atomic layer deposition process is performed in a cluster system or an in-line system.

Also, since the shape of the atomic layer deposition chamber unit 100 is not uniformly determined, it is possible to form the atomic layer deposition chamber unit 100 not only as a rectangular parallelepiped having a quadrangular projection shape but also as a hexagonal, octagonal, or circular shape. It is not limited to a certain shape.

The atomic layer deposition chamber unit 100 is supplied with any one of a raw material precursor and a reaction precursor (raw material precursor in this embodiment).

The scanning cathode unit 110 includes a cathode part 111 which is spaced apart from the substrate 101 and is connected to the cathode driving unit 170 and supplies a plasma to the other of the raw material precursor supplied to the substrate 101 and the reaction precursor, A deposition material supply line 112 installed in the atomic layer deposition chamber unit 100 and connected to the cathode unit 111 for supplying the other of the raw material precursor and the reaction precursor and a purge gas supply line 112 for supplying the purge gas to the cathode unit 111 And a scan material supply unit 150 in which a purge gas supply line 113 is embedded.

The cathode part 111 is coupled to the cathode driving unit 170 and moves on the substrate 101 to discharge the other one of the raw material precursor and the reaction precursor (reaction precursor in this embodiment) on the substrate 101. At this time, either one of the raw material precursor and the reaction precursor (raw material precursor in this embodiment) is supplied to the atomic layer deposition chamber unit 100, and the other one of the raw material precursor and the reaction precursor (reaction precursor in this embodiment) The plasma is generated by the power source so that the precursor of the raw material and the precursor of the reaction are reacted with each other. Thus, the precursor of the raw material and the deposition material generated from the reaction precursor can be deposited on the substrate 101.

At this time, the cathode part 111 is arranged in the width direction of the substrate 101 and moves along the longitudinal direction of the substrate 101, and is scanned by continuous movement as much as the area occupying the other one of the raw material precursor and the reaction precursor And can be discharged onto the substrate 101 in a method.

Since the cathode portion 111 according to the present embodiment is disposed in the width direction of the substrate 101 and moves along the longitudinal direction but can be arranged in the opposite direction to move along the width direction of the substrate 101, The cathode 111 is not limited to moving along any one side of the substrate, and the cathode 111 having a path that can be disposed and moved so as to provide a deposition material in a scanning manner on the substrate is applicable Do.

The cathode part 111 includes a cathode body 120 to which the evaporation material supply line 112 and the purge gas supply line 113 are connected and an evaporation material supply line 112 which is coupled to the cathode body 120, And a cathode block 125 provided with a deposition material supply unit 115 and a purge gas supply unit 118 connected to the purge gas supply line 113, respectively.

The cathode body 120 is coupled to the upper portion of the cathode block 125 to connect the evaporation material supply line 112 and the purge gas supply line 113 embedded in the scan material supply unit 150 to the cathode block 125 And may include a main pipe 121 and a sub pipe 122. The main pipe 121 is disposed along the longitudinal direction of the cathode body 120 and the plurality of sub pipes 122 are connected to the cathode block 125 at a lower portion of the main pipe 121 .

The cathode block 125 is provided with a groove-shaped plasma reaction part 126 in which a plasma is generated for a smooth chemical reaction between the raw material precursor and the reaction precursor.

The plasma reaction unit 126 according to this embodiment is for generating a plasma in a region where the other one of the raw material precursor and the reaction precursor is provided on the substrate. The scope of the present invention is not limited thereto, But may be applied to other blocks provided separately from the cathode block 125, and it may be a protruded shape, a plate shape, a rod shape, or the like as well as a groove shape.

According to the present embodiment, the reaction precursor is discharged to the plasma reaction unit 126 where plasma is generated in a state where the precursor of the raw material to be filled in the atomic layer deposition chamber unit 100 is already deposited on the substrate 101, 125 are moved along the substrate 101, a chemical reaction of the reaction precursor with respect to the precursor of the raw material occurs by the area of the cathode block 125, whereby a deposition material of the reaction precursor and the precursor of the precursor is deposited on the substrate 101 Deposition is performed.

At this time, the precursor of the raw material and the precursor of the precursor can be deposited by a plasma which is generated by applying an electric method such as DC, microwave, electron beam or the like by electricity to generate a plasma and then by using a magnetic field or the like, (Not shown) installed to provide heat to the substrate 101, such as another heater (not shown) installed on the inner wall of the atomic layer deposition chamber unit 100 , The scope of right of the present invention is not limited to performing deposition using only plasma by electromagnetic force.

At this time, not only the heat source (not shown) can be embedded in the cathode block 125 of the cathode portion 111 but also the plasma is supplied to the region where the other of the raw material precursor and the reaction precursor is provided adjacent to the cathode block 125 May be provided separately. That is, a heat source (not shown) can be installed in the cathode section 111 so as to be movable together with the cathode block 125, as well as movable in the cathode drive unit 170 or the atomic layer deposition chamber unit 100 Can be installed. The cathode block 125 is provided with a deposition material discharging portion 116 for discharging an excess amount of the reaction precursor and the raw precursor supplied from the deposition material supplying portion 115 and spaced apart from the deposition material supplying portion 115 . The deposition material discharge unit 116 is connected to the plasma reaction unit 126 in parallel with the deposition material supply unit 115. The deposition rate of the other one of the raw material precursor and the reaction precursor discharged to the plasma reaction unit 126 Providing a discharge passage for discharge. According to the present embodiment, since the reaction precursor flows into the plasma reaction unit 126 through the deposition material supply unit 115, surplus reaction precursor can be discharged to the deposition material discharge unit 116.

In addition, the deposition material discharge unit 116 sucks and discharges unnecessary generation materials of the reaction precursor reacted with the raw material precursor in the plasma state, thereby performing the first atomic layer deposition and then the raw material precursor To be adsorbed uniformly on the substrate.

At this time, the discharged reaction precursor may be provided to be adsorbed on the substrate through the deposition material supply part 115 by being recycled after being stored in a deposition material storage tank (not shown) for supplying a reaction precursor to the deposition material supply part 115.

The purge gas supply unit 118 is provided so as to face the substrate 101 so as to inject purge gas toward the substrate 101 and is spaced apart from the plasma reaction unit 126 to provide a passage through which the purge gas is supplied . As the purge gas, an inert gas such as oxygen, nitrogen, and argon may be used.

In this case, according to the present embodiment, when the purge gas is injected onto the substrate, the raw material precursor that has been previously provided on the substrate and adhered to the substrate remains adhered to the substrate, and the raw material precursor, That is, the deposition region by scanning, so that the purge gas acts as an air shower for the raw precursor.

For example, when the raw material precursor is adsorbed on the substrate and the raw material precursor of one layer is laminated on the substrate, when the cathode portion 110 moves on the substrate and releases the reaction precursor, The material precursor of the upper layer is detached from the substrate by the injection pressure of the purge gas due to weak adsorption to the substrate and is connected to a vacuum exhaust system (not shown) to be sucked into the evaporated material discharge portion 116, Lt; / RTI >

The purge gas supply unit 118 is disposed adjacent to the plasma reaction unit 126 and surrounds the plasma reaction unit 126 and includes a deposition material supply unit 115 and a deposition material discharge unit 116. [ When the cathode part 111 moves and the other one of the raw material precursor and the reaction precursor is discharged through the deposition material supplying part 115, the precursor is supplied to the purge gas supplying part 118 The two purge gases are injected through the two side purge gases. At this time, the purge gas injected from the purge gas supply unit 118 performs the same function as the air curtain that isolates the region of the gas emitted by the flow of air, thereby isolating the region where the other one of the raw material precursor and the reaction precursor is emitted to the outside To form a region where deposition occurs on the substrate.

The cathode portion 111 includes an electrode portion 130 for generating plasma in the plasma reaction portion 126 of the cathode block 125, a power supply portion 135 connected to the electrode portion 130 to supply electricity, And an electrode insulating portion 136 surrounding the electrode portion 130.

That is, the other of the raw material precursor and the reaction precursor that is discharged through the deposition material supply unit 115 is plasmaized and ionized by the electrode unit 130 for deposition. In the plasma reaction unit 126 of the cathode block 125, Can be chemically reacted with any one of the raw material precursor and the reaction precursor adsorbed on the substrate 101 to be deposited.

According to this embodiment, the reaction precursor is chemically reacted with the precursor of the raw material already adsorbed on the substrate in the plasmaized state, and is allowed to proceed in the opposite direction.

The scan material supply unit 150 includes a plurality of joints 152 and 153 that are coupled to one region of the cathode unit 111 and are folded when the cathode unit 111 moves, And a transfer support 155 provided in the atomic layer deposition chamber unit 100 and coupled to the box joint 151 in a relatively rotatable manner.

According to the present embodiment, the scan material supply unit 150 may have the same structure as the horizontal articulated robot and have the position and structure of the carrier support 115 and the box joint 151, But it is possible to use a structure and a position that allow each line necessary for atomic layer deposition of the substrate such as the purge gas, the material precursor and the reaction precursor to be stably embedded so as to allow the reciprocating movement for deposition of the cathode part 111 will be.

The cathode part 111 is coupled to the cathode driving unit 170 and can be moved while maintaining a constant clearance on the substrate 101. The scan material supplying part 150 is provided with a plurality So that the other one of the raw material precursor and the reaction precursor and the other one of the raw material precursor and the purge gas supply line 113 can be supplied without clogging due to the folding of the built-in deposition material supply line 112 and the purge gas supply line 113. [ Can be smoothly supplied and supplied.

The box joint 151 includes a first joint 152 that is relatively rotatably coupled to the cathode 111, a second joint 153 that is relatively rotatably coupled to the first joint 152, The box joint 151 includes a first joint 152 and a second joint 153. The second joint 153 and the conveyor support 155 are relatively rotatably coupled to each other. However, the scope of the present invention is not limited thereto, And the second joint 153 may be folded together to form a bellows or cable suit structure that can be expanded and contracted.

The joints 152 and 153 of the box joint base 151 and the joints between the box joint bands 151 and the conveyor support 155 are provided with a rotation using a magnetic fluid seal, A seal is formed and the rotary seal can provide a structure in which the vacuum is maintained against the outside even when the box joint base 151 is rotated.

A plurality of cathode joints 151 may be disposed adjacent to each other along the susceptor 103 to form a plurality of atomic layer deposition chamber units 100 And are respectively connected to a conveyance support 155 arranged alternately on one side and the other side. That is, according to the present embodiment, not only the cathode portion 111 can be arranged uniformly, but also a plurality of the cathode portions 111 can be arranged in two or more along the longitudinal direction of the substrate 101.

For example, when a plurality of scan material supply units 150 are arranged in a line on one side of a plurality of adjacent cathode units 111, it is difficult to arrange the atomic layer deposition chamber unit 100 in a limited deposition space, Interference may occur when the cathode portion 111 moves. However, according to the present embodiment, since the carrier supports 155 are alternately disposed on one side and the other side of the cathode unit 111 and the corresponding box joint bands 151 are alternately disposed on one side and the other side, The separation distance between the first and second electrodes 151 and 151 can be sufficiently secured without interference.

1 to 4, a method of depositing an atomic layer by an atomic layer deposition apparatus according to an embodiment of the present invention includes: a step of transferring a substrate 101 to one side opening 102 of an atomic layer deposition chamber unit 100; And a step of supplying one of a raw material precursor and a reaction precursor to the inside of the atomic layer deposition chamber unit 100 by a predetermined region And performing atomic layer deposition in a scanning manner by relatively moving the scanning cathode unit 110 to be supplied to the substrate 101 on the substrate 101.

Performing such atomic layer deposition may further comprise providing a plasma to either the source precursor and the reaction precursor. The plasma may be provided by the plasma reaction section 126 of the cathode section 111 as described above.

The step of performing the atomic layer deposition may also include a step of preventing the desorption of the other one of the raw material precursor and the reaction precursor in the region where the other of the raw material precursor and the reaction precursor is supplied by the purge gas supply unit 118, And a purge gas for removing the raw material precursor and the reaction precursor.

At this time, the raw precursor and the reaction precursor that are not adsorbed on the substrate removed by the purge gas may be sucked through the deposition material discharge unit 116, discharged to a deposition material storage tank (not shown), and circulated and reused.

The step of performing atomic layer deposition may also be a step of performing atomic layer deposition on the substrate 101 in a scanning manner while the cathode drive unit 170 moves the scanning cathode unit 110 on the substrate 101 have.

When the cathode drive unit 170 moves the scanning cathode unit 110 on the substrate 101 in the step of performing the atomic layer deposition according to the present embodiment, And as the cathode portion 111 is moved away from the conveying support 155, each of the joints 152 and 153 is folded. On the other hand, as the cathode portion 111 moves away from the conveying support 155, (152, 153) are expanded.

The overall structure of the atomic layer deposition apparatus and atomic layer deposition method according to one embodiment of the present invention has been described above. Various embodiments of the above-described scanning cathode unit 110 will be described in detail below.

4A, 4B and 4C are cross-sectional views of the cathode portion of FIG. 3 according to another embodiment, and FIG. 5 is a cross-sectional view taken along the line I-I of FIG. 3 according to another embodiment 6 is a cross-sectional view taken along the line I-I of FIG. 3 in which the exhaust section according to another embodiment is added. FIG. 7 is a cross-sectional view taken along the line I- Fig.

As described above, in the cathode part 111 according to the embodiment of the present invention, the electrode part 130 is integrally provided in the plasma reaction part 126, and the cathode part and the reaction part precursor And a purge gas supply unit 118 disposed apart from the deposition material supply unit 115 and surrounding the plasma reaction unit 126.

According to the present embodiment, the purge gas supply unit 118 may be disposed on both sides of the plasma reaction unit 126 as viewed in cross section, but when viewed from the bottom of the cathode unit 111, And has an arrangement surrounding the plasma reaction part 126 adjacent to the plasma reaction part 126 along the longitudinal direction. The arrangement of the purge gas supply unit 118 is also applied to the primary exhaust unit 160, the secondary purge gas supply unit 165, the secondary exhaust unit 168, and the raw material precursor supply unit 169, which will be described later.

The electrode unit 130 is for providing a plasma state of the other of the raw material precursor and the reaction precursor. The electrode unit 130 transforms molecules into an ionic state by high voltage so that atomic layer deposition occurs on the substrate. The susceptor 103 can be used as a corresponding ground to generate a plasma as well as to be movable together with the cathode portion 111 or in the atomic layer deposition chamber unit 100 in order to provide a potential difference which is high enough to generate a plasma (Not shown) may be used.

4A, 4B and 4C, the cathode block 125 according to the present embodiment has the purge gas supply part 118 and the evaporation material supply part 115 of a similar structure, but the plasma reaction part 126 The electrode unit 130 may have a different structure from the other. That is, the arrangement of the electrode unit 130 is variously provided, and plasma-generation of the deposition material-material precursor or the reaction precursor can be variously provided according to the mode of the electrode unit 130.

First, referring to FIG. 4A, the cathode block 125 has an electrode part 130 having a cross section like "┏┓" in a groove shaped plasma reaction part 126 like "┏┓". The electrode unit 130 includes an outer electrode insulation unit 136 surrounding and insulating the first electrode 141 and the first electrode 141 on the inner side. At this time, the plasma generated by the first electrode 141 having the shape as shown in FIG. 4A may be generated mainly in a region having an elongated elliptical cross-section extending out of the plasma reaction unit 126.

4B, the electrode unit 130 includes a first electrode 141 formed on the inner wall of the left side of the groove-shaped plasma reaction unit 126, such as "┏┓" of the cathode block 125, And an electrode insulating part 136 which surrounds and insulates the first electrode 141. The wall of the plasma reaction unit 126 corresponds to the second electrode 142 as a ground corresponding to the first electrode 141. At this time, the inner wall of the right side of the plasma reaction part 126 forms a potential difference with respect to the first electrode 141 in a state in which the electrode insulating part 136 is not disposed.

 At this time, the plasma generated by the first electrode 141 having the shape as shown in FIG. 4B can be mainly generated in the region having the elliptical cross-section elongated in the right and left direction from the inside of the plasma reaction unit 126.

Referring to FIG. 4C, the electrode unit 130 includes a first electrode 141 and a second electrode 142, which are provided on the upper inner wall of the plasma reaction unit 126, such as the " And an electrode insulating portion 136 having a shape such as "┏ ┓" for insulating and insulating the electrode 141. A perforated plate 138 may be formed at the lower end of the plasma reaction unit 126, in which holes for emitting the plasmaized raw material precursor are uniformly formed.

The plasma generated by the first electrode 141 having a shape as shown in FIG. 4C is generated by a potential difference between the first electrode 141 and the susceptor 103 corresponding to the ground, It can be mainly generated in an area having an elongated elliptical cross section.

4A, 4B, and 4C, when the cathode block 125 itself does not function as the electrode unit 130 and the electrode unit 130 and the electrode insulating unit 136 are separately provided, The wall forming the reaction part 126 may be made of either an insulating material or a metal material. At this time, when the plasma reaction part 126 is formed and the wall where the electrode insulating part 136 is not disposed performs a ground function corresponding to the electrode part 130, the wall must be made of a metal material.

5, the cathode block 125 is provided with an electrode coupling part 140 to which the electrode part 130 is coupled, and the electrode part 130 includes the electrode coupling part 140, And a plasma reaction unit 126 disposed between the first electrode 141 and the first electrode 141. The first electrode 141 is coupled to an upper portion of the first electrode 141. The first electrode 141 is spaced apart from the first electrode 141, And a deposition material supply unit 115 and a deposition material discharge unit 116 may be formed on the first electrode 141 and the second electrode 142. [

As shown in FIG. 5, the electrode coupling portion 140 may be provided not only in a groove shape in the cathode block 125, but also in a penetrating shape as shown in FIG. The first electrode 141 and the second electrode 142 are spaced apart from each other and coupled to the electrode coupling part 140 to provide a plasma reaction part 126 therebetween. A deposition material supplying unit 115 and a deposition material discharging unit 116 connected to each other with the plasma reaction unit 126 therebetween may be formed.

One of the raw material precursor and the reaction precursor is supplied to the atomic layer deposition chamber unit 100 and the other is introduced into the plasma reaction unit 126 through the deposition material supply unit 115 of the first electrode 141 And the other one of the raw material precursor and the reaction precursor that has been changed to the plasma state from the plasma reaction unit 126 is supplied to the second electrode 142 142, and is supplied to the substrate 101. The deposition material supply unit 115 of the deposition apparatus shown in FIG.

According to this embodiment, since the raw precursor S is already adsorbed on the substrate 101 and the reaction precursor R is in a state of being plasmaized, the reaction precursor R is reacted with the raw precursor S So that the deposition reaction can be carried out smoothly.

The cathode unit 111 of the scanning cathode unit 110 according to the present embodiment includes a power supply unit 135 connected to the electrode unit 130 to supply electricity, (Not shown). At this time, the power supply unit 135 is inserted into the first electrode 141 at the top of the cathode block 125 and connected thereto.

The electrode insulator 136 described above covers the electrode unit 130 so as to block generation of plasma from the outside of the plasma reaction unit 126 and to generate plasma mainly in the internal area, It is possible to protect the cathode block 125 provided with the electrode unit 130 itself. The electrode insulating portion 136 may be made of a material that can withstand very high voltages such as ceramics.

Referring again to FIG. 5, the scanning cathode unit 110 may further include an exhaust unit 160 provided to be spaced apart from the purge gas supply unit 118. The exhaust unit 160 is connected to a vacuum exhaust system (not shown) having a vacuum pump (not shown). Before the source precursor and the reaction precursor are supplied during the atomic layer deposition process, the deposition space of the atomic layer deposition chamber unit 100 Vacuum exhaust can be performed.

6, the scanning cathode unit 110 according to the present embodiment may further include a raw material precursor supply unit 169 provided outside the purge gas supply unit 118 and spaced apart from the purge gas supply unit 118 have.

The raw material precursor supply unit 169 may discharge the raw material precursor S outside the reaction precursor R and fill the atomic layer deposition chamber unit 100. [ At this time, since the raw precursor (S) is in a state of being adsorbed on the substrate 101 before the reaction precursor (R) is released, the plasma precursor reacted with the raw material precursor (S) And a deposition film can be formed on the substrate 101 by reacting.

FIG. 8 is a moving state view of a single scanning cathode unit of an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 9 is a view showing the reaction precursor, purge gas, And a raw material precursor.

As shown in FIG. 8, in the atomic layer deposition chamber unit 100 of the atomic layer deposition apparatus according to an embodiment of the present invention, the scanning cathode units 110 are arranged in a single unit. This single scanning cathode unit 110 can perform atomic layer deposition in a scanning manner while repeatedly reciprocating on the substrate 101 along the substrate 101.

The cathode part 111 of the scanning cathode unit 110 shown in Fig. 8 is a part of the cathode part 111 of the scanning cathode unit 110 shown in Fig. 8, in which the reaction precursor, the purge gas, the raw material precursor and the exhaust part for vacuum exhaust, V, < / RTI >

The single scanning cathode unit 110 may further include a secondary purge gas supply unit 165 spaced apart from the primary exhaust unit 160. The purge gas supply unit 118 corresponds to the primary purge gas supply unit 118 and the exhaust unit 160 corresponds to the primary exhaust unit 160.

The single scanning cathode unit 110 may further include a secondary exhaust unit 168 provided to be spaced apart from the first purge gas supply unit 118.

As shown in Figs. 1 to 7 and 9, a schematic transverse sectional configuration 110a of the scanning cathode unit 110, which is the first scanning cathode unit 110 relative to the cathode unit 111, The reaction precursor is supplied to the deposition material supply unit 115 and the purge gas is supplied through the purge gas supply unit 118 to supply air to the reaction precursor The raw material precursor is supplied to the atomic layer deposition chamber unit 100 by the supply port 105 of the raw material precursor provided on the inner wall of the atomic layer deposition chamber unit 100 Fig.

The schematic cross sectional configuration 110b of the uppermost scanning cathode unit 110 relative to the cathode section 111 is such that the raw precursor is discharged through the cathode block 125 of the cathode section 111 The raw material precursor supply unit 169 is provided outside the purge gas supply unit 118. [ In this case, the raw material precursor supply portion 169 is provided in the cathode block 125 so that the raw material precursor can be evenly discharged onto the substrate and adsorbed when the cathode block 125 moves.

The schematic third transverse sectional configuration 110c of the scanning cathode unit 110 with respect to the cathode portion 111 is the same as that of the upper second scanning cathode unit 110 with respect to the purge gas supply portion 118, A second purge gas supply unit 165 is added to the first purge gas supply unit 118 and the exhaust unit 160 is connected to the first purge gas supply unit 118 and the second purge gas supply unit 118. [ And the gas supply part 165 in the embodiment.

In this case, the exhaust port 160 is added to the outside of the first purge gas supply unit 118, so that the raw material precursor that is removed from the substrate by the first purge gas supply unit 118 and is scattered is reacted with the scattered raw material precursor in the plasma state By sucking and discharging the unnecessary generation material of the reaction precursor, the primary atomic layer deposition is carried out so that the raw precursor supplied for the next atomic layer deposition can be uniformly adsorbed on the substrate. At this time, the exhaust unit 160 may be connected to a vacuum exhaust system (not shown) that can filter unnecessary generation materials and recycle only the raw material precursor.

Further, on the outer side of the exhaust part 160, the second purge gas supply part 165 can secondarily surround the plasma reaction area to provide overlapping air curtains and air shower for the plasma reaction area.

The schematic cross sectional configuration 110d of the fourth highest scanning cathode unit 110 relative to the cathode portion 111 has the same structure as the uppermost third scanning cathode unit 110, The raw material precursor is discharged through the central deposition material supply part 115 in a state where the raw material precursor is supplied through the supply part 105 of the reaction precursor provided on the inner wall part of the unit 100 and adsorbed and discharged on the substrate, FIG.

A schematic transverse sectional configuration 110e of the scanning cathode unit 110 of the final fifth scanning cathode unit 110 is formed on the outermost sides of both sides of the uppermost scanning cathode unit 110 with a secondary exhaust part 168 ) Is an embodiment in which a precursor is discharged through a deposition material supply unit 115 in a state where a precursor of a raw material is supplied to the atomic layer deposition chamber unit 100 to perform deposition. The scanning cathode units 110 may be provided in a single unit in the atomic layer deposition chamber unit 100 to perform deposition on the substrate 101 as well as to be spaced apart from each other and arranged in a plurality of rows, It is possible to carry out deposition on the substrate.

FIG. 10 is a collective moving view of a plurality of scanning cathode units of an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 11 is a view illustrating a sequence of a plurality of scanning cathode units of an atomic layer deposition apparatus according to an embodiment of the present invention Fig. 12 is a layout diagram of a raw material precursor, a reaction precursor, a purge gas, and an exhaust portion for the plurality of scanning cathode units in Figs. 10 and 11. Fig.

10, when the cathode portion 111 of the three scanning cathode units 110 is provided in the atomic layer deposition chamber unit 100, the three cathode portions 111 reciprocate in a lump The deposition on the substrate 101 can be performed in a scanning manner.

11, when the cathode part 111 of the three scanning cathode units 110 is installed in the atomic layer deposition chamber unit 100, the three scanning cathode units 110 are sequentially reciprocated one by one, The deposition on the substrate 101 can be performed in a scanning manner while moving.

Referring to FIGS. 10, 11, and 12, as in the case of describing a single scanning cathode unit 110, a schematic lateral (cross) direction of the cathode portion 111 of the plurality of scanning cathode units 110 shown in FIG. Referring to the sectional arrangement, there may be an embodiment in which a reaction precursor is supplied to one of the scanning cathode units 110 in a plurality of rows, and an embodiment in which a raw precursor is supplied in the opposite direction.

That is, the schematic transverse sectional layout 110f of the first plurality of scanning cathode units 110 with respect to the cathode portion 111 is a lateral cross-sectional layout 110f of one scanning cathode unit 110, The PRP batches of the blocks are spaced apart from each other, and S and S are disposed between the atomic layer deposition chamber unit 100 and the atomic layer deposition chamber unit 100 for supplying and discharging the raw material precursor.

The schematic cross sectional configuration 110g of the second plurality of scanning cathode units 110 relative to the cathode portion 111 is similar to that of the cathode portions 111 of the plurality of scanning cathode units 110 having a PSP arrangement opposite to the basic PRP arrangement 0.0 > 111 < / RTI > These correspond to the embodiment in which the reaction precursor is discharged through the R of the PRP arrangement and the raw precursor is discharged through the S of the PSP arrangement. At this time, the raw material precursor may be supplied to fill the inside of the atomic layer deposition chamber unit 100 by the cathode portion 111 having the PSP arrangement, and the surplus amount may be discharged.

Next, a schematic cross-sectional layout 110h of the third plurality of scanning cathode units 110 with respect to the cathode portion 111 is a state in which R, that is, the reaction precursor is supplied and adsorbed on the substrate The source precursor is discharged through the central S to deposit.

According to the present embodiment, the evaporation material supply unit 115 and the evaporation material discharge units 115 and 116 for supplying the reaction precursor, the purge gas, and the raw material precursor to the scanning cathode unit 110, respectively, and the purge gas supply units 118 and 165 And the cathode part 111 for the precursor can be arranged continuously or discontinuously since the cathode parts 111 and the exhaust parts 160 and 168 can be standardized, And the atomic layer deposition chamber unit 110, respectively.

FIG. 13 is a cross-sectional view of a cathode driving unit using a linear motor of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 14 is a cross- Sectional view of a cathode driving unit using a moving part.

13 and 14, cathode-side drive units 170 are installed on both upper sides of the cathode portion 111 for the scanning deposition of the evaporation material on the substrate 101. The cathode-

The cathode drive unit 170 is disposed to be spaced apart from the atomic layer deposition chamber unit 100 via the susceptor 103 and is coupled to the atomic layer deposition chamber unit 100 and the cathode section 111 And a linear motor 171 for moving the cathode portion 111.

 The cathode portion 111 is coupled on a moving block 172 belonging to a linear motor 171 disposed opposite to both sides of the atomic layer deposition chamber unit 100 and a moving block 172 is mounted on the fixed block 173 It is possible to repeatedly reciprocate between one end and the other end of the substrate 101 by reciprocating by electromagnetic force in a noncontact state. By controlling the number of reciprocating cycles of the cathode portion 111 by the operation of the linear motor 171, the lamination thickness of the evaporation material with respect to the substrate 101 can be adjusted.

The cathode drive unit 170 according to the present embodiment can prevent adhesion of foreign matter to the substrate 101 during the atomic layer deposition process because the linear motor 171 hardly generates minute foreign substances due to friction have.

14, the cathode drive unit 170 includes a reciprocating roller portion 175 which is spaced apart from the atomic layer deposition chamber unit 100 by the susceptor 103, a reciprocating roller portion 175 And a cover portion 177 which is coupled to the reciprocating portion 176 and surrounds the reciprocating roller portion 175, .

Although not shown, the cathode drive unit 170 may include a lead screw and a drive motor for linear movement of the reciprocating portion 176, but the scope of the present invention is not limited thereto, Other driving means can be provided that can provide little and no linear movement.

In the cathode driving unit 170 according to the present embodiment shown in FIG. 14, the cathode portion 111 is coupled to the reciprocating portion 176 and can be moved along the reciprocating roller portion 175, The outflow of foreign matters generated from the reciprocating roller portion 175 is blocked by the cover portion 177 provided from the upper surface of the substrate 101 to the upper portion of the reciprocating roller portion 175, And prevents ultimate failure of the substrate 101 due to the foreign matter.

FIG. 15 is a cross-sectional view of a purge gas supply unit of an atomic layer deposition apparatus according to an embodiment of the present invention, in which a purge gas injection nozzle of a gap control unit is applied. FIG. FIG. 17 is a cross-sectional view of a gap adjusting unit of a gap regulating unit and a gap pressure sensor provided on a purge gas supply unit of an atomic layer deposition apparatus according to an embodiment of the present invention.

The atomic layer deposition apparatus according to the present embodiment repeatedly performs uniform deposition on the substrate 101 when the distance to the substrate 101 is kept constant while the scanning cathode unit 110 is moving, Can be adjusted.

15 to 17, the atomic layer deposition apparatus according to the present embodiment is provided with a gap (not shown) which is provided in the scanning cathode unit 110 to control the clearance distance of the scanning cathode unit 110 from the substrate 101 And an adjustment unit 180.

15, the gap regulating unit 180 includes a purge gas injection nozzle 181 (see FIG. 15) provided integrally with the purge gas supply unit 118 at the lower end of the purge gas supply unit 118 to use the pressure of the purge gas. ).

At this time, the purge gas injection nozzle 181 may be formed such that the nozzle opening 182 is gradually narrowed from the lower end to the upper end.

According to the present embodiment, the purge gas is discharged through the nozzle openings 182 and strikes the substrate 103, then flows outwardly of the nozzle openings 182 and can flow in all directions along the substrate 101, The clearance distance of the scanning cathode unit 110 from the substrate 101 can be adjusted by adjusting the flow pressure of the gas.

At this time, since the nozzle opening 182 is formed narrower at the upper portion and gradually wider at the lower portion, the purge gas naturally spreads at the lower portion of the nozzle opening 182 to provide the supporting pressure against the substrate, The clearance distance can be adjusted by the pressure acting on the side of the hinge 110.

16, the gap adjusting unit 180 may include a gap sensor 185 installed in the purge gas supply unit 118 to sense a clearance distance.

According to the present embodiment, the gap sensor 185 is connected to a control unit (not shown) so that the clearance distance of the purge gas supply unit 118 with respect to the substrate 101 is provided in real time in a control unit (not shown) So that it can be maintained. (Not shown) of the scanning cathode unit 110 is feedback-controlled in real time by a signal from the gap sensor 185 to control the distance of the cathode portion 111 from the substrate 101 It can be kept constant.

17, the gap adjusting unit 180 includes a floating nozzle 187 provided at the lower end of the purge gas supply unit 118 to discharge the purge gas toward the substrate 101, a floating nozzle 187 disposed at the lower end of the floating nozzle 187, And a gap pressure sensor 188 coupled to the upper surface of the floating nozzle 187 to sense the pressure of the purge gas applied to the floating nozzle 187.

The gap pressure sensor 188 is coupled to the floating nozzle 187 so that the rising pressure of the floating nozzle 187 by the purge gas discharged through the injection passage 189 of the floating nozzle 187 The gap distance of the purge gas supply portion 118 with respect to the substrate 101 is changed when the rising pressure is increased or decreased. Therefore, the gap pressure sensor 188, which detects the change, (Not shown) of the scanning cathode unit 110 is feedback-controlled in real time by the signal of the gap pressure sensor 188 in real time to adjust the clearance distance of the cathode portion 111 with respect to the substrate 101 to a constant .

According to the present embodiment, even when the pressure of purge gas injected from the floating nozzle 187 is the same as that of the purge gas injection nozzle 181 described above, the clearance distance of the cathode portion 111 with respect to the substrate 101 becomes constant .

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

100: atomic layer deposition chamber unit 101: substrate
102: opening 103: susceptor
105: supply port 106: exhaust port
110: Scanning cathode unit
111: cathode part 112: deposition material supply line
113: purge gas supply line 115: evaporation material supply unit
116: deposition material discharge part 118: purge gas supply part
120: cathode body 121: main pipe
122: Subpipe 125: Cathode block
126: plasma reaction part 130: electrode part
135: power supply unit 136: electrode isolation unit
140: electrode coupling portion 141: first electrode
142: second electrode 150: scan material supply unit
151: box joints 152: first joints
153: 2nd joint 155:
160: primary exhaust unit 165: secondary purge gas supply unit
168: secondary exhaust part 169: raw precursor supply part
170: cathode drive unit 171: linear motor
172: moving block 173: fixed block
175: reciprocating roller portion 176: reciprocating portion
177: cover part 180: gap adjusting unit
181: purge gas injection nozzle 182: nozzle opening
185: gap sensor 187: floating nozzle
188: gap pressure sensor

Claims (20)

An atomic layer deposition chamber unit provided with an opening through which the substrate enters and exits, a susceptor for supporting the substrate, and a raw precursor and a reaction precursor to supply a deposition material;
A scanning cathode unit disposed inside the atomic layer deposition chamber unit for emitting the other of the raw material precursor and the reaction precursor while moving along the substrate to deposit the deposition material on the substrate; And
And a cathode driving unit installed inside the atomic layer deposition chamber unit to move the scanning cathode unit. The method of claim 1,
Wherein the scanning cathode unit comprises:
And a cathode part spaced apart from the substrate and coupled to the cathode driving unit, and configured to supply a plasma to another one of the raw material precursor and the reaction precursor supplied on the substrate. 3. The method of claim 2,
Wherein the scanning cathode unit comprises:
And a scan material supply unit installed in the atomic layer deposition chamber unit and connected to the cathode unit and supplying another one of the raw material precursor and the reaction precursor to the cathode unit. The method of claim 3,
Wherein the scanning cathode unit comprises:
A deposition material supply line embedded in the scan material supply unit to supply the cathode precursor and the reaction precursor to the cathode unit; And
Further comprising a purge gas supply line embedded in the scan material supply unit to supply purge gas to the cathode unit. 5. The method of claim 4,
The cathode section
A cathode body; And
And a cathode block coupled to the cathode body and having a deposition material supply unit connected to the deposition material supply line and the purge gas supply line, respectively, and a purge gas supply unit. The method of claim 5,
Wherein the cathode block is provided with a plasma reaction unit in which a plasma is generated. The method according to claim 6,
Wherein the plasma reaction unit is provided in a groove shape. The method according to claim 6,
Further comprising a heat source provided inside the atomic layer deposition chamber unit and generating a plasma by heat in the plasma reaction unit. The method of claim 5,
Wherein the cathode block is provided with a deposition material discharge unit for discharging another one of the reaction precursor and the raw material precursor supplied from the deposition material supply unit and spaced apart from the deposition material supply unit. The method of claim 5,
Wherein the purge gas supply unit is disposed so as to face the substrate and is spaced apart from the plasma reaction unit so as to surround the deposition material supply unit. The method of claim 5,
The cathode section
An electrode unit for generating a plasma in the plasma reaction unit of the cathode block; And
And a power supply unit connected to the electrode unit to supply electricity. 12. The method of claim 11,
Wherein the cathode further comprises an electrode insulating portion for insulating the electrode portion. The method of claim 5,
The scan material supply unit includes:
A box joint band coupled to one region of the cathode portion and having a plurality of joints folded upon movement of the cathode portion; And
Wherein the atomic layer deposition unit includes a transfer support which is provided in the atomic layer deposition chamber unit and in which the box joint is relatively rotatably coupled. The method of claim 13,
Wherein the plurality of cathode joints are connected to one another on the one side of the atomic layer deposition chamber unit and on the other side of the atomic layer deposition chamber unit along the susceptor, Deposition apparatus. The method of claim 13,
Wherein the cathode driving unit includes a linear motor coupled to the atomic layer deposition chamber unit and the cathode unit to move the cathode unit. The method of claim 13,
The cathode drive unit includes:
A reciprocating roller unit spaced apart from the atomic layer deposition chamber unit with the susceptor interposed therebetween;
A reciprocating unit movably mounted on the reciprocating roller unit and coupled to the cathode unit; And
And a cover part coupled to the reciprocating part and surrounding the reciprocating roller part. The substrate being carried on one side of the atomic layer deposition chamber unit and supported on the susceptor;
Supplying a raw material precursor and a reaction precursor to the inside of the atomic layer deposition chamber unit; And
And performing atomic layer deposition in a scanning manner by moving the scanning cathode unit supplying the other one of the raw material precursor and the reactive precursor to the substrate by a predetermined region relative to the substrate. . 18. The method of claim 17,
Wherein performing the atomic layer deposition comprises:
Providing a plasma to the other of the source precursor and the reaction precursor. ≪ RTI ID = 0.0 > 11. < / RTI > 18. The method of claim 17,
Wherein performing the atomic layer deposition comprises:
Further comprising the step of supplying a purge gas adjacent to a region where the other of the source precursor and the reaction precursor is supplied. 18. The method of claim 17,
Wherein performing the atomic layer deposition comprises:
Wherein the cathode driving unit performs atomic layer deposition in a scanning manner while moving the scanning cathode unit,
Wherein the scanning cathode unit comprises:
A cathode part spaced apart from the substrate and coupled to the cathode driving unit, for supplying plasma to the other of the raw material precursor and the reaction precursor supplied on the substrate; And
A deposition material supply line installed in the atomic layer deposition chamber unit and connected to the cathode unit to supply the other of the raw material precursor and the reaction precursor and a purge gas supply line for supplying a purge gas to the cathode unit And a scan material supply unit,
The scan material supply unit includes:
A box joint band coupled to one region of the cathode portion and having a plurality of joints folded upon movement of the cathode portion; And
Wherein the atomic layer deposition chamber unit comprises a transfer support which is provided in the atomic layer deposition chamber unit and in which the box joint is relatively rotatably coupled.

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