KR100721504B1 - Plasma enhanced atomic layer deposition equipment and method of forming a thin film using the same - Google Patents

Abstract

The present invention relates to a plasma enhanced atomic layer deposition apparatus and a thin film forming method using the same. The present invention provides a plasma that can perform atomic layer deposition without electrical short-circuit even in a continuous deposition process by inducing a plasma to be generated only in a reaction chamber while constructing a reactor to facilitate the conversion of a process gas necessary for performing atomic layer deposition. An enhanced atomic layer deposition apparatus and a thin film forming method using the same are provided.

Atomic layer deposition, reaction chamber, showerhead, plasma, thin film, time division, periodic

Description

Plasma enhanced atomic layer deposition equipment and method of forming a thin film using the same}

1A and 1B are schematic diagrams showing a conventional sheet type chemical vapor deposition apparatus.

2 is a view illustrating a conventional atomic layer deposition method.

3 is a cross-sectional view schematically showing a plasma enhanced atomic layer deposition apparatus according to a preferred embodiment of the present invention.

4 is a view illustrating a plasma enhanced atomic layer deposition method according to a preferred embodiment of the present invention.

FIG. 5 is a flowchart illustrating a method of forming a thin film using the plasma enhanced atomic layer deposition apparatus of FIG. 3.

The present invention relates to an atomic layer deposition apparatus and a method for forming a thin film using the same, and more particularly, to perform atomic layer deposition deposition for forming a film in atomic layer units on a substrate by periodically repeating supply of process gases. A plasma-enhanced atomic layer deposition apparatus capable of generating a thin film by generating a plasma for activating it during a supply cycle of gases and a thin film forming method using the same.

Due to the development of semiconductor integrated technology, the process of depositing high purity and high quality thin film has become an important part of the semiconductor manufacturing process. Representative methods of thin film formation include chemical vapor deposition (CVD) and physical vapor deposition (PVD). Physical vapor deposition such as sputtering cannot be used to form a film of uniform thickness on the uneven surface because of poor step coverage of the formed thin film. Chemical vapor deposition is a method in which gaseous substances react on a surface of a heated substrate, and a compound produced by the reaction is deposited on the surface of the substrate. Compared with physical vapor deposition, chemical vapor deposition has been widely applied because of better step coverage, less damage to a substrate on which thin films are deposited, low deposition cost of thin films, and mass production of thin films.

However, as the degree of integration of semiconductor devices has recently been improved to sub-micron units, the conventional chemical vapor deposition method alone obtains a uniform thickness of sub-micron units on a wafer substrate, or has excellent step coverage. It is difficult to obtain a material film having a constant composition regardless of the position when a step such as a submicron-sized contact hole, via, or trench is present in the wafer substrate. Suffered.

Therefore, unlike chemical vapor deposition which simultaneously injects all conventional process gases, two or more process gases required for obtaining a desired thin film are sequentially divided and supplied according to time so as not to meet in the gas phase, and the supply cycles are periodically repeated. Atomic layer deposition, which forms a film, has been applied as a new thin film formation method. Using the above-described atomic layer deposition method, deposition occurs only by substances adsorbed on the surface of the substrate (typically chemical molecules including constituent elements of the thin film), and the amount of their adsorption is generally self-limiting on the substrate. It is not limited to the amount supplied to the gas phase, so it is uniformly obtained throughout the substrate, so that even a step with a very high aspect ratio, a film having a constant thickness regardless of the position can be obtained, and is very thin in several nanometers. The thickness of the membrane can be adjusted. In addition, since the thickness of the film deposited per feed cycle of the process gas is constant, accurate film thickness can be controlled and evaluated through the number of feed cycles. However, in order to achieve the atomic layer deposition method, the first raw material gas must be removed from the gas state before the second raw material gas is supplied after supplying the first raw material gas to suppress mixing in the gas phase between the gas raw materials supplied. A process that must be evacuated for a second or purged with an inert gas should be included between the supply of gaseous raw materials. Therefore, using a conventional single-layer chemical vapor deposition apparatus configured without considering fast process gas conversion in seconds, the time required for converting the process gas becomes long, and the deposition time required to obtain a thin film having a constant thickness. This has the disadvantage of lengthening. Longer deposition times increase process costs by reducing the number of wafers a unit can handle in unit time. Therefore, it is necessary to reduce the deposition time in order to apply the atomic layer deposition method to the semiconductor production.

1A and 1B are schematic diagrams showing a conventional sheet type chemical vapor deposition apparatus.

Referring to FIG. 1A, an inlet 120 for supplying a process gas is provided at an upper portion of the reaction chamber 100, and an outlet 122 for exhausting the process gas in the reaction chamber 100 is provided at a side surface thereof. In the reaction chamber 100, a substrate support 116 on which the substrate 110 is seated, an upper portion is connected to an inlet 120, and a lower portion is formed with a spray hole for injecting a process gas into the substrate 110. A showerhead 112 is installed. In addition, a substrate support driver 118 for driving the substrate support 116 up and down is installed, and an upper portion of the driver 118 is connected to the substrate support 116, so that a predetermined region of the driver 118 is the reaction chamber 100. ) Will be located inside.

Here, the process gas of the reaction chamber 100 is exhausted to the outlet 122 through a gap between the reaction chamber 114 and the substrate support 116. However, since the outlet 122 is not symmetrical with the inlet 120 and is deflected to one side, the flow of the process gas is biased toward the outlet 122. As such, when the flow of the process gas in the reaction chamber 114 is biased to one side when the thin film is deposited on the substrate 110, the process gases are not uniformly supplied over the entire surface of the substrate 110, and thus There is a concern that a thin film is deposited on a portion of the substrate 110 that is insufficient in supply. Therefore, in order to eliminate the process gas bias in the reaction chamber 114, the outlet 122 should be spaced far from the substrate 110 on which the thin film is deposited. However, when the outlet 122 is spaced apart from the substrate 110 on which the thin film is deposited, the volume of the reaction chamber 114 becomes large. As the volume of the reaction chamber 114 increases, the amount of process gas required for the process increases, thereby increasing the process cost, and it takes a long time to convert the process gases of the reaction chamber 114 in the atomic layer deposition process. Therefore, the problem that the process time is long in performing atomic layer deposition cannot be avoided.

Meanwhile, the substrate support 116 and the substrate support driver 118 are exposed to the process gas exhausted through the outlet 122. As such, when the substrate support 116 and the substrate driver 118 are exposed to the process gas, unnecessary thin films are deposited. This unnecessarily deposited film not only causes particles later, but also causes malfunctions of components included in the reaction chamber 114, thereby shortening the lifespan of the components.

FIG. 1B is proposed to solve the problem of FIG. 1A, and the outlet 222 is disposed under the reaction chamber 214 such that the inlet 220 and the outlet 222 are symmetrical to each other.

Referring to FIG. 1B, unlike the case of FIG. 1A, the flow of process gas in the reactor 200 may be symmetrically formed in the substrate 210, but the substrate support 216 and the substrate driver 218 may still be formed. There is a problem of exposure to the process gas. In addition, since there is a minimum space required for driving the substrate support 216, it is difficult to make the reaction chamber 214 small. Therefore, it is difficult to reduce the process time in the atomic layer deposition process.

2 is a view illustrating a conventional atomic layer deposition method.

Referring to FIG. 2, the process cycle for atomic layer deposition consists of first source gas supply 310 → purge 312 → second source gas supply 314 → purge 312. In the purge step, the reaction chamber is evacuated to a vacuum or an inert purge gas is flowed into the reaction chamber to remove the raw material gas supplied from the reaction chamber. In the conventional atomic layer deposition method, if the reactivity between the raw material gases is very high, even a small amount of raw material gas remaining in the gaseous phase may cause particle generation, and thus it is necessary to lengthen the purge time. If the reactivity between the raw material gases is low or takes a long time to react, there is a problem that the deposition time is long because the raw material supply time is long enough.

Therefore, in order to solve such a problem, a plasma enhanced atomic layer deposition method has been recently developed by the inventors of the present invention to increase the reactivity and reduce the purge time, thereby increasing the deposition rate and increasing the productivity of the deposition apparatus. It is disclosed in Korean Patent No. 0273473.

The plasma-enhanced atomic layer deposition method is different from the atomic layer deposition method described above in that a high deposition rate can be obtained even by using raw material gases having low reactivity with each other. Conventionally, when using gas materials having low reactivity as described above, there was a problem in that a thin film was not deposited because the reaction was not performed well on the substrate, but in the plasma enhanced atomic layer deposition, radicals having high reactivity by plasma of the process gas ( The formation of radicals and ions and their participation in the reaction can speed up the reaction.

The technical problem to be achieved by the present invention is to configure the reactor to facilitate the conversion of the process gas required to perform atomic layer deposition, while inducing the plasma generated only in the reaction chamber atomic layer deposition without electrical short-circuit in the continuous deposition process It is to provide a plasma enhanced atomic layer deposition apparatus capable of performing.

Another technical problem to be achieved by the present invention is to provide a method for forming a thin film which can effectively form a thin film even when there is no reactivity or very weakness between raw materials using the plasma enhanced atomic layer deposition apparatus achieved by the above technical problem. There is.

Plasma enhanced atomic layer deposition apparatus according to an embodiment of the present invention for achieving the above technical problem, and a substrate support for supporting a substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A shower head defining a reaction chamber together with the substrate support, installed in the reactor wall in connection with the gas inlet pipe, and having a plurality of injection holes for supplying gas into the reaction chamber; It is installed between the gas inlet pipe and the shower head, narrow pipes are connected in parallel to maintain the gas flow from the gas inlet pipe while preventing plasma generation due to the potential difference between the gas inlet pipe and the shower head. Fine perforated tube made of an insulating material; A gas outlet pipe for discharging the gas in the reaction chamber; And a high frequency connection terminal installed to be connected to the shower head to apply an AC potential wave.

Pipes of the micro-perforated tube to have a diameter and length such that no plasma is generated.

The gas inlet tube has a smaller diameter than the opening of the upper portion of the reactor wall and is inserted into the opening, and the gas outlet tube has a gas supplied into the reaction chamber through a space between the reactor wall and the shower head. It is preferably installed in the opening to be discharged through a gap between the reactor wall and the gas inlet pipe.

The high frequency connection terminal is connected to the shower head through the reactor wall and is installed to be electrically insulated from the reactor wall.

A reactor body may be further provided to surround a predetermined region of the reactor wall and the substrate support, and may have an open / close gas outlet. At this time, the high frequency connection terminal is connected to the shower head through the reactor body and the reactor wall to apply an alternating potential wave, and is installed to be electrically insulated from the reactor body and the reactor wall.

A gas sealing ring may be further provided on the connection portion between the substrate support and the reactor wall to secure the inside of the reactor.

A heater may be further provided to surround the side wall of the reactor wall.

The substrate support may further include a heater capable of heating the substrate.

The substrate support may be moved up and down so that the substrate can be inserted into or detached from the reaction chamber.

According to another aspect of the present invention, there is provided a plasma enhanced atomic layer deposition apparatus comprising: a substrate support for supporting a substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A shower head defining a reaction chamber together with the substrate support, installed in the reactor wall in connection with the gas inlet pipe, and having a plurality of injection holes for supplying gas into the reaction chamber; A showerhead insulating wall surrounding the top and sides of the showerhead; A plasma generation barrier wall disposed between the shower head insulation wall and the reactor wall, the plasma generation barrier wall having a potential equal to that of the reactor wall, and a gap formed between the shower head insulation wall and the shower head insulation wall; A gas outlet pipe for discharging the gas in the reaction chamber; And a high frequency connection terminal installed to be connected to the shower head to apply an AC potential wave.

The inlet gas flows through the gap between the plasma generation barrier wall and the shower head insulation wall to prevent the gas supplied into the reaction chamber from flowing between the plasma generation barrier wall and the shower head insulation wall. The formation of a film on the outside of the insulating wall is suppressed.

The high frequency connection terminal has a tubular shape through which an inert gas flows, and a hole is formed between the plasma generation barrier wall and the showerhead insulation wall, and the hole is between the plasma generation barrier wall and the showerhead insulation wall. It can be connected to the gap of to provide a passage of inert gas. In addition, an upper surface of the showerhead insulating wall or the plasma generating blocking wall facing the inert gas supplied through the high frequency connection terminal uniformly flows in the gap between the plasma generating blocking wall and the showerhead insulating wall. It may further include a symmetric buffer passage formed by digging a trench.

The high frequency connection terminal is connected to the shower head through the reactor wall, the plasma generation barrier wall and the showerhead insulation wall, and is installed to be electrically insulated from the reactor wall and the plasma generation barrier wall.

A reactor body may be further provided to surround a predetermined region of the reactor wall and the substrate support, and may have an open / close gas outlet. In this case, the high frequency connection terminal is connected to the shower head through the reactor body, the reactor wall, the plasma generation blocking wall, the shower head insulating wall to apply an alternating current potential wave, and the reactor body, the reactor wall and the It may be installed to be electrically insulated from the plasma generating blocking wall.

The gas inlet pipe has a diameter smaller than the opening of the upper portion of the reactor wall and is inserted into the opening, and the gas outlet pipe is a space between the reactor wall and the plasma generation blocking wall where gas supplied into the reaction chamber is supplied. It is preferably installed in the opening so as to be discharged through the gap between the reactor wall and the gas inlet pipe.

According to another aspect of the present invention, there is provided a plasma enhanced atomic layer deposition apparatus comprising: a substrate support for supporting a substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A gas dispersion grid in which a plurality of injection holes are drilled on the opposite surface of the substrate support; A volume control plate connected to the gas dispersion grid and installed on an upper portion of the gas dispersion grid, the volume control plate having a curved shape in the form of a fallopian tube to minimize the volume occupied by the gas inside and to smooth the flow of the gas; A gas outlet pipe for discharging the gas in the reaction chamber; And a high frequency connection terminal installed to be connected to the volume control plate to apply an AC potential wave.

A showerhead insulating wall may be further provided surrounding the top and sides of the volume control plate to insulate the volume control plate and the gas dispersion grid.

The high frequency connection terminal is connected to the volume control plate through the reactor wall, and is installed to be electrically insulated from the reactor wall.

A reactor body may be further provided to surround a predetermined region of the reactor wall and the substrate support, and may have an open / close gas outlet. In this case, the high frequency connection terminal is connected to the volume control plate through the reactor body and the reactor wall to apply an AC potential wave, and is installed to be electrically insulated from the reactor body and the reactor wall.

The gas inlet pipe has a diameter smaller than the opening of the upper part of the reactor wall and is inserted into the opening, and the gas outlet pipe is provided with a gas supplied into the reaction chamber through a space between the reactor wall and the volume control plate. It is preferably installed in the opening to be discharged through a gap between the reactor wall and the gas inlet pipe.                     

According to another aspect of the present invention, there is provided a plasma enhanced atomic layer deposition apparatus comprising: a substrate support for supporting a substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A shower head defining a reaction chamber together with the substrate support, installed in the reactor wall in connection with the gas inlet pipe, and having a plurality of injection holes for supplying gas into the reaction chamber; It is installed between the gas inlet pipe and the shower head, narrow pipes are connected in parallel to maintain the gas flow from the gas inlet pipe while preventing plasma generation due to the potential difference between the gas inlet pipe and the shower head. Fine perforated tube made of an insulating material; A showerhead insulating wall surrounding the top and sides of the showerhead; A plasma generation barrier wall disposed between the shower head insulation wall and the reactor wall, the plasma generation barrier wall having a potential equal to that of the reactor wall, and a gap formed between the shower head insulation wall and the shower head insulation wall; A gas outlet pipe for discharging the gas in the reaction chamber; And a high frequency connection terminal installed to be connected to the shower head to apply an AC potential wave.

The shower head has a gas dispersion grid in which a plurality of injection holes are drilled on opposite sides of the substrate support, and is connected to the gas dispersion grid to be installed on the gas dispersion grid to minimize the volume of gas in the shower head. It is preferable that the volume control plate has a curved shape in the form of a fallopian tube for smooth gas flow.                     

Pipes of the micro-perforated tube to have a diameter and length such that no plasma is generated.

The inlet gas flows through the gap between the plasma generation barrier wall and the shower head insulation wall to prevent the gas supplied into the reaction chamber from flowing between the plasma generation barrier wall and the shower head insulation wall. The formation of a film on the outside of the insulating wall is suppressed.

The high frequency connection terminal has a tubular shape through which an inert gas flows, and a hole is formed between the plasma generation barrier wall and the showerhead insulation wall, and the hole is between the plasma generation barrier wall and the showerhead insulation wall. It can be connected to the gap of to provide a passage of inert gas. In addition, a ditch is formed on the upper surface of the showerhead insulating wall or the plasma generating blocking wall facing the inert gas supplied through the high frequency connection terminal so that the inert gas flows uniformly in the gap between the plasma generating blocking wall and the showerhead insulating wall. It may further include a symmetric buffer passage formed by parsing.

The gas inlet pipe has a diameter smaller than the opening of the upper portion of the reactor wall and is inserted into the opening, and the gas outlet pipe is a space between the reactor wall and the plasma generation blocking wall where gas supplied into the reaction chamber is supplied. It is preferably installed in the opening so as to be discharged through the gap between the reactor wall and the gas inlet pipe.

The high frequency connection terminal is connected to the shower head through the reactor wall, the plasma generation barrier wall, and the showerhead insulation wall, and is installed to be electrically insulated from the reactor wall and the plasma generation barrier wall.

A reactor body may be further provided to surround a predetermined region of the reactor wall and the substrate support, and may have an open / close gas outlet. In this case, the high frequency connection terminal is connected to the shower head through the reactor body, the reactor wall, the plasma generation blocking wall and the shower head insulating wall to apply an alternating current potential wave, and the reactor body, the reactor wall and the It is installed to be electrically insulated from the plasma generating barrier.

A gas sealing ring may be further provided on the connection portion between the substrate support and the reactor wall to secure the inside of the reactor.

A heater may be further provided to surround the side wall of the reactor wall.

The substrate support may further include a heater capable of heating the substrate.

The substrate support may be moved up and down so that the substrate can be inserted into or detached from the reaction chamber.

In order to achieve the above another technical problem, the present invention, in the method for forming a thin film on the substrate, the raw material containing a metal element and the raw material gas is not simply mixed with the reaction but when reacted with the raw material gas when activated by plasma to form a film Preparing process gases comprising a purge gas that can be formed; Charging the substrate into the reaction chamber in which the reaction for forming the thin film takes place; Supplying the raw material gas to the reaction chamber through a gas inlet pipe; Stopping supply of the source gas and supplying the purge gas to the reaction chamber through the gas inlet pipe; And generating a plasma for activating the purge gas in a part of the period of supplying the purge gas, wherein the supplying of the raw material gas, supplying the purge gas, and generating the plasma are performed. Provided is a method for forming a conductive thin film, which is repeated a predetermined number of times.

The lower part of the gas inlet pipe is provided with a fine perforated pipe in which narrow pipes are connected in parallel, and the process gases may be supplied from the gas inlet pipe through the fine perforated pipe.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the following embodiments are provided to those skilled in the art to fully understand the present invention, and may be modified in various forms, and the scope of the present invention is described in the following embodiments. It is not limited. Like numbers refer to like elements in the figures.

3 is a schematic cross-sectional view of a plasma enhanced atomic layer deposition apparatus according to a preferred embodiment of the present invention.

Referring to FIG. 3, a heater 608 capable of heating the substrate 556 may be built in the substrate support 560 for supporting the substrate 556. The reactor wall 522 made of a metal alloy has an opening 516 formed at an upper portion thereof and a lower portion thereof connected to the substrate support 560. Substrate support 560 and reactor wall 522 define the reactor interior. The gas sealing ring 558 may be further provided at the connection portion between the reactor wall 522 and the substrate support 560 to secure the sealing property at the connection portion between the reactor wall 522 and the substrate support 560. A gas inlet pipe 510 is provided on the reactor wall 522 to supply process gases. The gas inlet pipe 510 is inserted into the opening 516 formed above the reactor wall 522, and has a diameter smaller than the opening 516 and may be provided to generate a space 514 between the openings 516. have.

In addition, the reaction chamber 554 is defined together with the substrate support 560, and is connected to the gas inlet pipe 510 and installed in the reactor wall 522, and a plurality of injections for supplying gas into the reaction chamber 554. Showerheads 542 and 540 with holes are provided. The showerheads 542 and 540 are electrically connected to the high frequency connection terminal 566. Meanwhile, a fine perforated tube 536 may be further provided between the shower heads 542 and 540 and the gas inlet tube 510. The micro-perforated tube 536 made of an insulator connecting between the gas inlet pipe 510 and the shower heads 542 and 540 has a plurality of fine pipes in the middle thereof, so that the process gas flows into the shower head but the plasma There is no backflow or leakage through the tubes, and the length and diameter of these microtubules is such that no plasma is generated. This will be described later. At this time, the shower heads 542 and 540 are connected to the ends of the microperforated tube 536. The showerheads 542 and 540 consist of a gas distribution grid 542 and a volume control plate 540. The gas distribution grid 542 is horizontally installed to face the substrate 556 and has a plurality of injection holes. The upper portion of the volume control plate 540 is perforated to fit the diameter of the micro-perforated tube 536, the lower portion has a cylindrical shape that is perforated to fit the gas distribution grid 542, but the inside is a trumpet-shaped curved surface It is designed to facilitate the conversion of process gas by minimizing the volume on top of the gas dispersion grid 542 while smoothly dispersing the flow of gas. In this case, in the sequential process gas supply process, previously supplied gas may be unnecessarily accumulated in the shower heads 540 and 542 to minimize a gaseous reaction with the gas supplied later. Upper and side portions of the showerheads 542 and 540 are provided with a showerhead insulating wall 538 for insulating the showerheads 542 and 540.

In addition, a gas outlet tube 518 for discharging the gas in the reaction chamber 554 is provided, the gas outlet tube 518 is connected to the vacuum pump 598. The gas outlet pipe 518 is installed to be symmetrical with respect to the substrate 556 so that the outflow (exhaust) flow of gas is not biased. In this embodiment, the gas outlet pipe 518 is installed in the opening 518 to be connected to the gap 514 between the opening 516 of the reactor wall 522 and the gas inlet pipe 510, but the substrate 556 Of course, it can also be installed in the peripheral portion of the substrate 556 to be symmetrical with respect to. The process gas injected into the reaction chamber 554 through the gas distribution grid 542 passes through the gap 514 between the opening 516 of the reactor wall 522 and the gas inlet pipe 510. Is spilled into. In Figure 3 '-??' indicates the flow direction of the process gas.

In addition, a heater 604 may be further provided to surround the side wall of the reactor wall 522 so that the reactor wall 522 may be configured as a warm wall or a heat wall according to a use.

The high frequency connection terminal 566 made of a metal to which high frequency power is applied from the outside is installed through the reactor wall 522 from the outside to be electrically connected to the shower head volume control plate 540 and the gas distribution grid 542. Since the reactor wall 522 is to be electrically blocked, an insulating cover 568 surrounding the high frequency connection terminal 566 is attached and installed at the same time. On the other hand, the substrate 556 and the substrate support 560, which operate as the opposite electrodes of the shower heads 540 and 542 subjected to the AC waveform high frequency potential, are electrically connected to the ground 594 through the reactor wall 522. Is processed. When high frequency power is applied to the gas dispersion grid 542 through the high frequency connection terminal 566, the process gas existing in the reaction chamber 554 is converted into plasma to help the thin film to be deposited on the substrate 556.

On the other hand, in order to cause the plasma to occur only in the reaction chamber 554 between the gas distribution grid 542 and the substrate 556 may be further provided with a plasma generating blocking wall 528 having the same potential as the reactor wall 522. . The plasma generation blocking wall 528 is provided between the showerhead insulating wall 538 and the reactor wall 522 such that a gap is formed between the showerhead insulating wall 538. In this case, the high frequency connection terminal 566 is connected to the showerheads 542 and 540 through the reactor wall 522, the plasma generation blocking wall 528, and the showerhead insulating wall 538. It is installed to be electrically insulated from the plasma generating blocking wall 528.

Meanwhile, a plasma may be generated due to a potential difference between the gas inlet pipe 510 and the shower heads 542 and 540 through which the process gas flows, so that the showerhead insulating wall connecting the shower heads 542 and 540 and the gas inlet pipe 510. A conductive film may be formed inside the hole of 538. The conductive film formed inside the hole of the showerhead insulating wall 538 may cause an electrical short between the showerheads 542 and 540 and the grounded gas inlet 510. Accordingly, the shower head 540 is provided with a micro-perforated tube 536 in which several narrow pipes are connected in parallel so as to suppress the generation of plasma while maintaining the flow of gas in order to suppress the generation of plasma at the undesired site. , 542 is installed between the gas inlet pipe 510. The fine perforated tube 536 is formed of an insulating material. The pipes of the microperforated tube 536 have a diameter and a length such that no plasma is generated. Preferably, about 8 mm perforations having a diameter of about 0.6 mm are formed in a micro perforated tube having a total diameter of about 6 mm and a length of about 20 mm. The length is sufficiently long compared to the distance between the gas distribution grid 542 and the substrate 556 without forming a perforation in the pipe formed of the insulating material connecting the gas inlet pipe 510 and the shower heads 542 and 540. It is possible to suppress the generation of plasma inside this tube, but this increases the material and cost required to manufacture the equipment because the upper part of the showerhead insulation wall 538 must be made thicker by this length and the other part of the chamber must be made larger. .

In confined spaces, the electrons accelerated by the electric field move toward the electrodes, and the number of times they collide with gas atoms or molecules is small. In order to maintain the state of the plasma, electrons accelerated fast enough in the electric field collide with neutral gas particles, ionizing atoms or molecules, releasing the electrons bound to them, and then accelerating the electrons again. The process of colliding with and removing the electrons again must continue. In a narrow space, the ionization of the neutral gas particles is not effective because electrons collide with a solid and lose energy before the electrons are accelerated enough to get enough energy to remove the electrons from the neutral gas particles. Suppressed.                     

In addition, since there is a potential difference between the reactor wall 522 and the showerhead insulating wall 538, plasma may be generated therein, and the process gas passing through the reaction chamber 554 passes there, so that the inside of the reactor wall 522 In addition, a conductive film may be formed outside the showerhead insulating wall 538. The conductive film formed on the showerhead insulating wall 538 may cause an electrical short between the showerheads 542 and 540 and the grounded reactor wall 522.

Plasma generation barrier wall 528 between the reactor wall 522 and the showerhead insulation wall 538 and electrically connected to the reactor wall 522 is provided when the conductive plasma generation barrier wall 528 is electrically connected to the reactor wall 522. Since there is no potential difference between them, no plasma is generated. If the interval between the plasma generation blocking wall 528 and the showerhead insulating wall 538 is narrowed, it is possible to suppress the generation of plasma in this portion. In this case, plasma is mainly generated in the reaction chamber 554 between the relatively wide gas distribution grid 542 and the substrate 556 among the spaces between the showerheads 540 and 542 which are subjected to the AC waveform high frequency potential. . In addition, it is possible to maintain the flow of the uncertainty gas such as argon (denoted by?) Between the plasma generation blocking wall 528 and the showerhead insulating wall 538 to prevent the process gas from entering the gap 548. The inert gas necessary for this can flow through the tubular high frequency connection terminal 566. The inert gas exits the hole 564 of the high frequency connection terminal and flows between the gaps 544 and 548 between the showerhead insulating wall 538 and the plasma generating barrier wall 528. In this case, it is preferable to form passages 624, 626, and 628 in which gas easily flows in the plasma generation blocking wall 528 facing the upper surface of the showerhead insulating wall 538. In addition, the upper surface of the showerhead insulating wall 538 or the opposite surface of the inert gas supplied through the high frequency connection terminal 566 evenly flows in the gap between the plasma generation blocking wall 528 and the showerhead insulating wall 538. It is preferable to provide the symmetrical buffer passage by digging the grooves 624 and 626 into the plasma generating barrier wall 528. In this way, even if the high frequency connection terminal 568 is not located at the center of the shower heads 542 and 540, the inert gas flowing through the gaps 544 and 548 between the shower head insulating wall 538 and the plasma generating blocking wall 528 is used. The flow can be made uniform and symmetrical. When the gaps 544 and 548 are 0.4 mm and the outer diameter of the showerhead insulation wall 538 is 210 mm, when 20 sccm of gas flows, the flow velocity of the gases in the gaps 544 and 548 is 25 ° C and 5 torr at 19. mm / s, faster at higher temperatures.

Since the conductive thin film is formed only at the part where the process gas is supplied and the plasma is generated, no plasma is generated between the plasma generation barrier wall 528 and the reactor wall 522, and the plasma generation barrier wall 528 and the showerhead insulation wall ( No process gas is supplied between 538 to form a conductive thin film. As a result, the conductive thin film is formed only in the reaction chamber 554, and the conductive thin film is not formed elsewhere, so that an electrical short can be prevented even if the process of forming the conductive thin film on the substrate 556 is repeated.

In addition, it surrounds a predetermined area of the reactor wall 522 and the substrate support 560 to form an exterior, and further includes a reactor body 600 having an inert gas inlet 590 and an inert gas outlet 592 that can be opened and closed. Can be. In this case, the high frequency connection terminal 566 is connected to the showerheads 542 and 540 through the reactor body 600 and the reactor wall 522 and is electrically insulated from the reactor body 600 and the reactor wall 522. It is installed as possible. In addition, when the plasma enhanced atomic layer deposition apparatus of the present invention further includes the showerhead insulating wall 538 and the plasma generating blocking wall 528 described above, the high frequency connection terminal 566 is a reactor body 600, a reactor. It penetrates through the wall 522, the plasma generating barrier wall 528, and the showerhead insulating wall 538, and is connected to the showerheads 542 and 540, and the reactor body 600, the reactor wall 522, and the plasma generating barrier wall. 528 is provided to be electrically insulated from it. In addition, although not shown, the reactor body 600 is divided into an upper cover and a lower body. When the pressure inside the reactor body 600 is equal to or higher than the pressure of the reaction chamber 554 formed on the substrate 556 by the inert gas introduced into the reactor body 600 through the inert gas inlet 590, the reaction chamber ( 554) The gas in it cannot escape.

The substrate support driving unit for driving the substrate support 560 is a pneumatic cylinder 584 which is fixed to the outside of the bottom of the reactor body 600, the drive shaft 580 connecting the pneumatic cylinder 584 and the substrate support 560 and The moving plate 578 adjusts the balance between the drive shafts 580. At the time of loading and detaching the substrate 556, the substrate support 560 connected to the pneumatic cylinder 584 moves downward to separate the reactor wall 522 and the substrate support 560, and the reaction chamber 554 is opened. At this time, the central support pin 572 installed in the center of the substrate support 560 is connected to the central axis 574, and stops further descending at a specific height. The substrate support 560 continues to descend, but the substrate 556 is supported by the central support pin 572, so that the substrate 556 is separated from the substrate support 560. The height at which the substrate 556 stops is pre-aligned to allow the substrate 556 to be transported by a robot arm of an external substrate transport apparatus. For this purpose, the length of the central shaft 574 and the central support pin 572 may be used. Can be adjusted.

According to the plasma enhanced atomic layer deposition apparatus according to the preferred embodiment of the present invention, the volume control plate 540 having a trumpet-shaped curved surface minimizes the volume inside the shower heads 542 and 540 while smoothly distributing gas flow. Therefore, it is easy to convert the process gas, and thus, in the process of sequentially supplying the process gas, the previous feed gas may be minimized in the showerheads 540 and 542 to minimize the gas phase reaction with the gas supplied later. In addition, the micro-perforated tube 536 having a plurality of narrow pipes connected in parallel may suppress plasma generation between the shower heads 542 and 540 and the gas inlet tube 510. In addition, a film is formed only in the reaction chamber 554 between the gas distribution grid 542 and the substrate 556 by flowing an inert gas through a gap between the grounded plasma generation blocking wall 528 and the showerhead insulating wall 538. In addition, since the film is not deposited in the other part where the gas flows, the conductive thin film can be formed by the plasma enhanced atomic layer deposition method without the problem of electrical short circuit. In addition, the process gas flows only inside the reactor and does not meet the reactor body 600.

4 is a view illustrating a plasma enhanced atomic layer deposition method according to a preferred embodiment of the present invention.

Referring to Figure 4, the raw material gas 440 and the purge gas 442 is supplied in a cycle (T _cycle ) of 440 → 442. Here, the high frequency potential 446 is applied for a predetermined time in the middle of the supply of the purge gas 442 to generate the plasma 446. The raw material gas 440 is a gas containing a metal element forming a film, such as titanium tetrachloride (TiCl ₄ ), and the purge gas 442 does not react by being simply mixed with the deposition gas 440, but reacts when activated by the plasma 446. It is a gas that forms a film.

5 is a flowchart illustrating a method of forming a thin film according to the present invention using the plasma enhanced atomic layer deposition apparatus of FIG. 3.

Referring to FIG. 5, the substrate 556 is charged into the reaction chamber 554 to seat the substrate 556 on the substrate support 560 (850). In operation 852, the substrate 556 is heated to a predetermined deposition temperature. Next, the raw material gas 440 is supplied to the reaction chamber 554. Subsequently, the purge gas 442 is supplied to remove the remaining evaporation gas 440 (operation 860). In operation 864, the purge gas 442 is changed to a plasma 446 state by supplying RF power to the reaction chamber through the high frequency connection terminal. The plasma 446 reacts with the deposition gas 440 adsorbed on the substrate 556 to form a thin film. Then cut off the RF power. After the RF power is cut off, the concentration of radicals or ions in the activated purge gas decreases very quickly, thus minimizing the time for supplying the purge gas after cutting off the RF power. The process is repeated for a predetermined period to form a thin film having a desired thickness (866).

Since atomic layer deposition can be performed only by two kinds of gases, the configuration of the gas supply unit can be simplified, and the time required for the gas supply cycle (T _cycle ) can be reduced. In addition, in this method, even when the raw material gas 440 and the purge gas 442 are mixed in the exhaust part including the reactor and the outlet port 516, the particles do not react with each other. After the deposition is completed, after cooling the substrate 556 (868), the substrate 556 is taken out from the reaction chamber 554 (870).

Experimental Example 1

A titanium nitride (TiN) film was formed according to the conductive thin film formation method according to the embodiment. In this case, 100 sccm of argon (Ar) gas and titanium tetrachloride (TiCl ₄ ) bubbler were passed through the shower head in the feed gas supply step. From the purge gas supply step shed hydrogen (H ₂₎ gas 100sccm and nitrogen (N ₂₎ gas and 60sccm argon gas 100sccm. 20 sccm of argon gas was continuously flowed through the hole of the high frequency connection terminal. The substrate temperature was set to 350 ° C., the RF power to 150 W, and the pressure to 3 torr. The feed time of the raw material gas was 0.2 seconds, and the purge gas supply time was 5.8 seconds. Among the 5.8 seconds, only the purge gas was supplied for the first 2.0 seconds without applying RF power, the purge gas was supplied for the next 2.0 seconds, and the plasma was generated by applying RF power, and the purge gas was supplied without the RF power for the last 1.8 seconds. The process gas supply cycle of 6.0 seconds was repeated to form a homogeneous titanium nitride film.

Experimental Example 2

According to the conductive thin film forming method according to the embodiment was formed a titanium (Ti) film. At this time, argon gas 230sccm and titanium tetrachloride (TiCl ₄ ) bubbler were passed through the shower head in the feed gas supply step. In the purge gas feeding step, 100 sccm of hydrogen (H ₂ ) gas and 230 sccm of argon gas were flowed. 20 sccm of argon gas was continuously flowed through the hole of the high frequency connection terminal. The substrate temperature was set at 380 ° C., the RF power was set at 200 W, and the pressure was set at 3 torr. The feed time of the raw material gas was 0.2 seconds, and the purge gas supply time was 5.8 seconds. Among the 5.8 seconds, only the purge gas was supplied for the first 2.0 seconds without applying RF power, the purge gas was supplied for the next 2.0 seconds, and the plasma was generated by applying RF power, and the purge gas was supplied without the RF power for the last 1.8 seconds. The process gas supply cycle of 6.0 seconds was repeated to form a homogeneous titanium film.

As described above, according to the plasma-enhanced atomic layer deposition apparatus of the present invention, the volume control plate having a trumpet-shaped curved surface smoothly disperses the flow of gas, while minimizing the volume inside the showerhead, thereby facilitating conversion of the process gas. Therefore, in the sequential process gas supply process, the previous feed gas may be minimized in the showerhead, thereby minimizing the gaseous reaction with the gas subsequently supplied. In addition, by providing a micro-perforated tube in which several narrow pipes are connected in parallel, it is possible to suppress the generation of plasma due to the potential difference between the shower head and the gas inlet tube. In addition, an inert gas flows through the gap between the plasma generating barrier wall and the showerhead insulating wall, so that the film is formed only in the reaction chamber between the gas dispersion grid and the substrate, and the film is not deposited in the other part of the gas flow. The conductive thin film can be formed by plasma enhanced atomic layer deposition without any problem. Therefore, the plasma is generated only in the reaction chamber between the gas dispersion grid and the substrate, and the deposition of the thin film is suppressed in other gas flow regions, so that the conductive thin film can also be formed using plasma enhanced atomic layer deposition.

In addition, by providing the gas inlet tube and the gas outlet tube in the form of a double pipe, it is possible to prevent the process gas in the reaction chamber from being biased toward the gas outlet tube, and the flow of the process gas in the reaction chamber to the substrate. It can be maintained symmetrically with respect to and deposit a uniform thin film on the substrate. In addition, since the flow of the process gas is maintained symmetrically with respect to the substrate, the showerhead and the reaction chamber can be configured smaller than before. Therefore, it is easy to convert the process gas in the process in which various kinds of process gases are sequentially introduced.

Furthermore, since the process gas is configured in the form of a double chamber and the process gas is configured to flow only inside the reactor, unnecessary thin film is prevented from being deposited below the substrate support.

In addition, according to the present invention, even when the process gases are not reactive or very weak in the atomic layer deposition method it is possible to form a thin film effectively.

Furthermore, in the atomic layer deposition method, the process time can be shortened by minimizing the supply time of the purge gas during the process gas supply cycle.

Furthermore, it is possible to reduce the generation of contaminant particles in the exhaust of the apparatus in which the atomic layer deposition method is performed.

As mentioned above, although the preferred embodiment of this invention was described in detail, this invention is not limited to the said embodiment, A various deformation | transformation by a person of ordinary skill in the art within the scope of the technical idea of this invention is carried out. This is possible.

Claims (40)

An apparatus for depositing a thin film on a substrate, the apparatus comprising: A substrate support for supporting the substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A shower head defining a reaction chamber together with the substrate support, installed in the reactor wall in connection with the gas inlet pipe, and having a plurality of injection holes for supplying gas into the reaction chamber; It is installed between the gas inlet pipe and the shower head, narrow pipes are connected in parallel to maintain the gas flow from the gas inlet pipe while preventing plasma generation due to the potential difference between the gas inlet pipe and the shower head. Fine perforated tube made of an insulating material; A gas outlet pipe for discharging the gas in the reaction chamber; And And a high frequency contact terminal installed to be connected to the shower head to apply an alternating potential wave. The apparatus of claim 1, wherein the pipes of the micro-perforated tube have a diameter and a length such that plasma does not occur. According to claim 1, The gas inlet pipe has a diameter smaller than the opening of the upper portion of the reactor wall is inserted into the opening is installed, the gas outlet pipe is the gas supplied into the reaction chamber is the reactor wall and the shower Plasma enhanced atomic layer deposition apparatus is installed in the opening so as to be discharged through the gap between the reactor wall and the gas inlet pipe through the space between the head. The apparatus of claim 1, wherein the high frequency connection terminal is connected to the shower head through the reactor wall and is electrically insulated from the reactor wall. The plasma enhanced atomic layer deposition apparatus of claim 1, further comprising a reactor body that surrounds a predetermined region of the reactor wall and the substrate support, and has an open / close gas outlet. The method of claim 5, wherein the high frequency connection terminal is connected to the shower head through the reactor body and the reactor wall to apply an alternating potential wave, characterized in that it is installed to be electrically insulated from the reactor body and the reactor wall. Plasma enhanced atomic layer deposition apparatus. The plasma enhanced atomic layer deposition apparatus of claim 1, further comprising a gas sealing ring disposed at a connection portion between the substrate support and the reactor wall to secure the inside of the reactor. The apparatus of claim 1, further comprising a heater installed to surround sidewalls of the reactor wall. The apparatus of claim 1, further comprising a heater capable of heating the substrate on the substrate support. The apparatus of claim 1, wherein the substrate support is movable up and down so that the substrate can be inserted into or detached from the reaction chamber. An apparatus for depositing a thin film on a substrate, the apparatus comprising: A substrate support for supporting the substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A shower head defining a reaction chamber together with the substrate support, installed in the reactor wall in connection with the gas inlet pipe, and having a plurality of injection holes for supplying gas into the reaction chamber; A showerhead insulating wall surrounding upper and side portions of the showerhead; A plasma generation barrier wall disposed between the shower head insulation wall and the reactor wall, the plasma generation barrier wall having a potential equal to that of the reactor wall, and a gap formed between the shower head insulation wall and the shower head insulation wall; A gas outlet pipe for discharging the gas in the reaction chamber; And And a high frequency connection terminal installed to be connected to the shower head to apply an AC potential wave. 12. The method of claim 11, wherein an inert gas flows through a gap between the plasma generation barrier wall and the showerhead insulation wall, thereby allowing gas supplied into the reaction chamber to flow between the plasma generation barrier wall and the showerhead insulation wall. Preventing the film from being formed on the outside of the showerhead insulating wall by preventing the plasma enhanced atomic layer deposition apparatus. The method of claim 12, wherein the high frequency connection terminal has a tubular shape so that the inert gas flows, a hole is formed between the plasma generating blocking wall and the showerhead insulating wall, the hole is formed with the plasma generating blocking wall And a gap between the showerhead insulating walls to provide a passage of inert gas. The plasma generation apparatus of claim 13, wherein the inert gas supplied through the high frequency connection terminal evenly flows in the gap between the plasma generation barrier wall and the showerhead insulation wall, or the plasma generation surface facing or opposite to the showerhead insulation wall. Plasma-enhanced atomic layer deposition apparatus further comprises a symmetrical buffer passage formed by digging a barrier wall. The method of claim 11, wherein the high frequency connection terminal is connected to the shower head through the reactor wall, the plasma generation barrier wall, and the showerhead insulation wall, and is electrically insulated from the reactor wall and the plasma generation barrier wall. Plasma enhanced atomic layer deposition apparatus, characterized in that provided. 12. The apparatus of claim 11, further comprising a reactor body that surrounds a predetermined area of the reactor wall and the substrate support to form an exterior and has a gas outlet opening that can be opened and closed. 17. The reactor of claim 16, wherein the high frequency connection terminal is connected to the shower head through the reactor body, the reactor wall, the plasma generating blocking wall, and the shower head insulating wall to apply an alternating current potential wave. Plasma-enhanced atomic layer deposition apparatus characterized in that it is installed to be electrically insulated from the reactor wall and the plasma generating blocking wall. 12. The method of claim 11, wherein the gas inlet pipe has a diameter smaller than the opening of the upper portion of the reactor wall is inserted into the opening is installed, the gas outlet pipe is the gas supplied into the reaction chamber is the reactor wall and the plasma Plasma-enhanced atomic layer deposition apparatus characterized in that it is installed in the opening so as to be discharged through the gap between the reactor wall and the gas inlet pipe through the space between the generating barrier wall. An apparatus for depositing a thin film on a substrate, the apparatus comprising: A substrate support for supporting the substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A gas dispersion grid in which a plurality of injection holes are drilled on opposite surfaces of the substrate support; A volume control plate connected to the gas dispersion grid and installed on an upper portion of the gas dispersion grid, the volume control plate having a curved shape in the form of a fallopian tube for minimizing the volume occupied by the gas inside and smoothing the flow of the gas; A gas outlet pipe for discharging the gas in the reaction chamber; And And a high frequency connection terminal installed to be connected to the volume control plate to apply an AC potential wave. 20. The apparatus of claim 19, further comprising a showerhead insulation wall surrounding top and sides of the volume control plate to insulate the volume control plate and the gas distribution grid. 20. The apparatus of claim 19, wherein the high frequency connection terminal is connected to the volume control plate through the reactor wall and electrically insulated from the reactor wall. 20. The apparatus of claim 19, further comprising a reactor body that surrounds a predetermined region of the reactor wall and the substrate support to form an exterior and has a gas outlet opening that can be opened and closed. 23. The apparatus of claim 22, wherein the high frequency connection terminal is connected to the volume control plate through the reactor body and the reactor wall to apply an AC potential wave, and is installed to be electrically insulated from the reactor body and the reactor wall. A plasma enhanced atomic layer vapor deposition apparatus. 20. The method of claim 19, wherein the gas inlet pipe has a diameter smaller than the opening of the upper portion of the reactor wall is inserted into the opening is installed, the gas outlet pipe is the gas supplied into the reaction chamber and the reactor wall and the volume Plasma enhanced atomic layer deposition apparatus is installed in the opening to be discharged through a gap between the reactor wall and the gas inlet pipe through the space between the throttle. An apparatus for depositing a thin film on a substrate, the apparatus comprising: A substrate support for supporting the substrate; A reactor wall defining the inside of the reactor together with the substrate support, the reactor wall including an upper surface having an opening; A gas inlet pipe for introducing gas into the reactor; A shower head defining a reaction chamber together with the substrate support, installed in the reactor wall in connection with the gas inlet pipe, and having a plurality of injection holes for supplying gas into the reaction chamber; It is installed between the gas inlet pipe and the shower head, narrow pipes are connected in parallel to maintain the gas flow from the gas inlet pipe while preventing plasma generation due to the potential difference between the gas inlet pipe and the shower head. Fine perforated tubes made of insulating material; A showerhead insulating wall surrounding upper and side portions of the showerhead; A plasma generation barrier wall disposed between the shower head insulation wall and the reactor wall, the plasma generation barrier wall having a potential equal to that of the reactor wall, and a gap formed between the shower head insulation wall and the shower head insulation wall; A gas outlet pipe for discharging the gas in the reaction chamber; And And a high frequency connection terminal installed to be connected to the shower head to apply an AC potential wave. 26. The method of claim 25, wherein the showerhead is a gas dispersion grid in which a plurality of injection holes perforated on the opposite surface of the substrate support, connected to the gas dispersion grid is installed on the gas dispersion grid and the gas inside the shower head Plasma-enhanced atomic layer deposition apparatus comprising a volume control plate having a curved shape of the fallopian tube to minimize the volume occupied and to facilitate the flow of gas. The apparatus of claim 25, wherein the pipes of the micro-perforated tube have a diameter and a length such that plasma does not occur. 27. The method of claim 25, wherein an inert gas flows through a gap between the plasma generation barrier wall and the showerhead insulation wall, thereby allowing gas supplied into the reaction chamber to flow between the plasma generation barrier wall and the showerhead insulation wall. Preventing the film from being formed on the outside of the showerhead insulating wall by preventing the plasma enhanced atomic layer deposition apparatus. 29. The method of claim 28, wherein the high frequency connection terminal has a tubular shape so that the inert gas flows, a hole is formed between the plasma generating blocking wall and the showerhead insulating wall, the hole is formed with the plasma generating blocking wall And a gap between the showerhead insulating walls to provide a passage of inert gas. The plasma generating apparatus of claim 29, wherein the inert gas supplied through the high frequency connection terminal evenly flows in a gap between the plasma generation blocking wall and the showerhead insulating wall, wherein the plasma generation is opposite to or faces the showerhead insulating wall. Plasma-enhanced atomic layer deposition apparatus further comprises a symmetrical buffer passage formed by digging a barrier wall. The gas inlet tube of claim 25, wherein the gas inlet tube has a smaller diameter than the opening of the upper portion of the reactor wall and is inserted into the opening, and the gas outlet tube has gas supplied into the reaction chamber from the reactor wall and the plasma. Plasma-enhanced atomic layer deposition apparatus characterized in that it is installed in the opening so as to be discharged through the gap between the reactor wall and the gas inlet pipe through the space between the generation barrier. The method of claim 25, wherein the high frequency connection terminal is connected to the shower head through the reactor wall, the plasma generation barrier wall, and the showerhead insulation wall, and electrically insulated from the reactor wall and the plasma generation barrier wall. Plasma enhanced atomic layer deposition apparatus, characterized in that provided. 27. The apparatus of claim 25, further comprising a reactor body that surrounds a predetermined region of the reactor wall and the substrate support to form an exterior and has a gas outlet opening that can be opened and closed. 34. The reactor of claim 33, wherein the high frequency connection terminal is connected to the shower head through the reactor body, the reactor wall, the plasma generating barrier wall, and the shower head insulation wall to apply an alternating current potential wave. Plasma-enhanced atomic layer deposition apparatus characterized in that it is installed to be electrically insulated from the reactor wall and the plasma generating blocking wall. 27. The apparatus of claim 25, further comprising a gas sealing ring disposed at a connection portion between the substrate support and the reactor wall to secure the inside of the reactor. 27. The apparatus of claim 25, further comprising a heater disposed to surround sidewalls of the reactor walls. 27. The apparatus of claim 25, further comprising a heater on the substrate support for heating the substrate. 27. The apparatus of claim 25, wherein the substrate support is movable up and down so that the substrate can be inserted into or detached from the reaction chamber. In the method for forming a thin film on a substrate, Preparing a process gas including a raw material gas containing a metal element and a purge gas which does not simply react with the raw material gas but reacts with the raw material gas to form a film when activated by plasma; Charging the substrate into the reaction chamber in which the reaction for forming the thin film takes place; Supplying the raw material gas to the reaction chamber through a gas inlet pipe; Stopping supply of the deposition gas and supplying the purge gas to the reaction chamber through the gas inlet pipe; And Generating a plasma for activating the purge gas in a portion of the period for supplying the purge gas,  And supplying the source gas, supplying the purge gas, and generating the plasma a predetermined number of times. 40. The conductive thin film according to claim 39, wherein a lower portion of the gas inlet pipe is provided with fine perforated pipes in which narrow pipes are connected in parallel, and the process gases are supplied from the gas inlet pipe through the fine perforated pipe. Forming method.

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