KR20020011510A - Single wafer type chemical vapor deposition equipment and method of forming a thin film using the same - Google Patents

Abstract

PURPOSE: A chemical vapor deposition apparatus is provided to uniformly deposit a thin film on a substrate, by installing a gas induction pipe and a gas outflow pipe in the same position so that reaction gas is prevented from flowing to the gas outflow pipe. CONSTITUTION: The substrate(400) is horizontally settled on a substrate supporting unit(300). An opening is installed in the upper portion of a reaction chamber wall(100), connected to the substrate supporting unit so that a separate reaction chamber is supplied. A gas induction pipe(510) is inserted into the opening to generate a gap(520a) in the opening, having a diameter smaller than that of the opening. A shower head(210,220) has a plurality of spray holes on the surface facing the substrate supporting unit so that the gas induced through the gas induction pipe is uniformly sprayed to the substrate supporting unit. The shower head is installed inside the reaction chamber wall while separated from the reaction chamber wall by a predetermined distance, connected to the end of the gas induction pipe. The gas sprayed to the reaction chamber flows to the outside through the gap in the opening.

Description

Single wafer type chemical vapor deposition equipment and method of forming a thin film using the same}

The present invention relates to a single-sheet chemical vapor deposition apparatus and a method for forming a thin film using the same, in particular, a single-layer chemical vapor deposition apparatus capable of obtaining a uniform thin film by preventing gas flow in the reaction chamber and a thin film using the same. It relates to a method of vapor deposition.

Due to the development of semiconductor integrated technology, the process of depositing high purity and high quality thin film has become an important part of the semiconductor manufacturing process. Representative methods of thin film formation include chemical vapor deposition (CVD) and physical vapor deposition (PVD). Here, chemical vapor deposition is a method in which gaseous substances react on a surface of a heated substrate, and a compound produced by the reaction is deposited on the surface of the substrate. The chemical vapor deposition method has been applied to the substrate due to less damage to the substrate on which the thin film is deposited, lower deposition cost of the thin film, and mass production of the thin film as compared with the physical vapor deposition method.

Equipment applied to the chemical vapor deposition method is a batch type (Batch Type) for simultaneously depositing a thin film on a plurality of substrates (Single Wafer Type) for depositing a thin film sequentially on each substrate. Since the size of the substrate on which the thin film is to be deposited is increased and the types of thin films to be deposited by chemical vapor deposition are diversified, a single sheet type is widely applied.

1A and 1B are respective schematic views showing the structure of a conventional sheet type chemical vapor deposition apparatus.

Referring to FIG. 1A, the reaction chamber 10 has an inlet 20 for supplying a process gas at an upper portion thereof and an outlet 30 for exhausting the process gas in the reaction chamber 10 at a side surface thereof. In the reaction chamber 10, the substrate support 50 on which the substrate 40 is seated, the upper part is connected to the inlet 20, and the lower part is a shower hole having a spray hole for injecting a process gas into the substrate 40. The head 70 is installed. In addition, since the substrate support driver 60 for driving the substrate support 50 up and down is installed, and the upper portion of the driver 60 is connected to the substrate support 50, a predetermined region of the driver 60 is the reaction chamber 10. ) Will be located inside.

Here, the process gas in the reaction chamber 10 is exhausted to the outlet 30 through a gap between the reaction chamber 10 and the substrate support 50. At this time, since the outlet 30 is not symmetrical with the inlet 20 and is deflected to one side, the flow of the process gas is biased toward the outlet 30.

As such, if the flow of the process gas in the reaction chamber 10 is biased to one side when the thin film is deposited on the substrate 40, the process gases are not uniformly supplied over the entire surface of the substrate 40. The thin film is deposited at a portion of the substrate 40 where the gas supply is relatively large. Therefore, in order to eliminate the phenomenon of the process gas in the reaction chamber 10, the outlet 30 should be spaced away from the substrate 40 on which the thin film is deposited. However, when the outlet 30 is spaced apart from the substrate 40 on which the thin film is deposited, the volume of the reaction chamber 10 becomes large. When the volume of the reaction chamber 10 increases, the efficiency of the process gas decreases due to an increase in the amount of process gases required for the same process, and the process gas is switched in a process in which several kinds of process gases are sequentially supplied into the reaction chamber 10. There is a difficulty. In addition, when the reaction chamber 10 is maintained in a warm wall or hot wall state, a temperature deviation may be severe.

Meanwhile, the substrate support 50 and the substrate support driver 60 are exposed to the process gas that is exhausted through the outlet 30. In addition, since a minute gap is formed between the substrate 40 and the substrate support 50, the back surface of the substrate 40 is also exposed to the process gas.

As such, when the back surface of the substrate 40, the substrate support 50, and the substrate driver 60 are exposed to the process gas in the reaction chamber 10, unnecessary thin films are deposited on them. This unnecessarily deposited film not only acts as a source of particle generation later, but also causes malfunctions of components included in the reaction chamber 10, thereby shortening the lifespan of the components.

FIG. 1B is proposed to solve the problem of FIG. 1A, and the outlet 30 is disposed below the reaction chamber 10 so that the inlet 20 and the outlet 30 are symmetrical. Here, the same reference numerals as in FIG. 1B denote the same elements as in FIG. 1A, and repeated descriptions thereof will be omitted.

Referring to FIG. 1B, unlike the case of FIG. 1A, the flow of process gas in the reaction chamber 10 may be symmetrically formed in the substrate 40, but is still on the back side of the substrate 40, the substrate support 50. ), And the substrate driver 60 is exposed to the process gas.

In the case of depositing a thin film using such a chemical vapor deposition apparatus, since all process gases used in the deposition process exist in the reaction chamber at the same time, particles acting as a source of contamination in the reaction chamber are easily formed, and the step coverage is deteriorated. In the case of using the compound as a raw material, there is a problem that carbon impurities are contained in the thin film in the continuous deposition process. In order to solve such a problem, a time-division chemical vapor deposition method is proposed in which time-division is supplied in an independent pulse form without continuously supplying process gases.

FIG. 2 is a graph illustrating a time-division chemical vapor deposition method using the sheet-type chemical vapor deposition apparatus of FIGS. 1A and 1B.

Referring to FIG. 2, it can be seen that the process gases 11, 12, and 13 are supplied in a cycle (T _cycle ) of 11 → 12 → 13 → 12. Here, the process gases 11, 12, and 13 used in the time-division chemical vapor deposition process are classified into the vapor deposition gas 11, the reactor gas 13, and the purge gas 12.

The vapor deposition gas 11 is a gas containing a metal component of a solid film to be deposited, such as a titanium organic compound used for the deposition of a titanium nitride film (TiN), and the reactor body 12 is itself like ammonia used for the deposition of a titanium nitride film. Is a gas that promotes the reaction of the vaporization gas without decomposition, or decomposes and reacts, such as oxygen, water vapor, and isopropyl alcohol vapor, which is used for deposition of an alumina film, to provide a chemical element of a solid film that is not provided by the vaporization gas. The purge gas 13 is a gas supplied to exhaust the deposition gas and the reactor gas which remain unreacted. Helium, argon, nitrogen gas, etc. are mainly used for purge gas, and gas containing thin film components may be used as purge gas if there is little reactivity. In this case, when activated by plasma generation, it may be converted into a reactor.

Next, the time division chemical vapor deposition process mechanism will be described. In general, when thin film deposition is performed, the temperature at which chemisorption on the substrate occurs is lower than the pyrolysis temperature of the vapor deposition gas. Therefore, if the temperature of the deposition process is maintained below the thermal decomposition temperature of the vapor deposition gas and above the temperature at which the chemical adsorption occurs on the substrate, the vapor deposition gas introduced into the reaction chamber does not decompose and is present only on the surface of the substrate. . Subsequently, when the purge gas is supplied, the remaining deposition gas which has not been adsorbed is discharged to the outside, and the next-flowing reaction gas reacts with the deposition gas adsorbed on the substrate surface to form a thin film. When the vapor deposition gas is adsorbed onto the substrate, it is impossible to chemisorb more than one layer of the molecular layer, so that the thickness of the thin film formed per supply cycle regardless of the supply amount or the supply time of the vapor deposition gas is constant. Therefore, the thickness of the formed thin film is controlled only by the repetition frequency of the supply cycle. As described above, a method of depositing a thin film by periodically repeating a time division combination is referred to as a periodic chemical vapor deposition method.

On the other hand, the periodic chemical vapor deposition method made in the conventional chemical vapor deposition apparatus as described above has the following problems. Firstly, if the reactive gas and the reactive gas are not reactive or weak below the pyrolysis temperature of the vaporizing gas and the reactor gas, it is difficult to use the cyclic chemical vapor deposition method. need. Second, there is a fear that contaminating particles may be generated by mixing the deposition gas and the reactor gas in the exhaust part including the outlet. Third, the inert purge gas must be supplied in the middle of supplying the deposition gas and the reactor gas, and thus, the supplying step of the process gas becomes complicated and the time required for one supply cycle becomes long.

In order to solve the problems of the periodic chemical vapor deposition method disclosed in US Patent No. 5,916,365 is as follows. First, after depositing and adsorbing vapor deposition gas into the reaction chamber, the vapor deposition gas remaining in the reaction chamber is evacuated by a vacuum pump. Subsequently, the high-frequency power is applied to supply the plasma-reacted reactant to the empty chamber to deposit a thin film, and then the cycle of exhausting the reactant remaining in the reaction chamber with a vacuum pump is repeated to form the thin film. However, according to this method, the evacuation speed decreases as the pressure decreases, so that it takes a considerable time for the evacuation gas and the reactor gas remaining in the reaction chamber to be completely evacuated to the vacuum pump. If the exhaust time is reduced too much, it is difficult to prevent the gaseous reaction of the two gases because the deposition gas and the reactor gas are mixed. In addition, since the supply and the exhaust of the deposition gas and the reactor gas are repeated, there is a problem that the pressure in the reaction chamber is severe and the plasma in the reaction chamber is unstable.

Accordingly, the technical problem to be achieved by the present invention is to provide a single-phase chemical vapor deposition apparatus that can solve the above-mentioned problems by eliminating the bias of the process gases in the reaction chamber and to facilitate the conversion of the process gases. .

Another technical problem of the present invention is to provide a thin film formation method that can effectively form a thin film even when the reactive gas and the reactive gas is not very reactive or vapor deposition by introducing a plasma to the sheet-type chemical vapor deposition apparatus achieved by the technical problem. To provide

1A and 1B are respective schematic views showing the structure of a conventional sheet type chemical vapor deposition apparatus;

FIG. 2 is a graph for explaining time-division chemical vapor deposition using the sheet-type chemical vapor deposition apparatus of FIGS. 1A and 1B;

3 is a schematic view of a sheet type chemical vapor deposition apparatus according to the present invention;

4 is an exploded perspective view of the sheet type chemical vapor deposition apparatus according to FIG. 3; And

5A and 5B are flowcharts illustrating a thin film forming method according to the first and second embodiments of the present invention, which are performed by periodic chemical vapor deposition using the sheet type chemical vapor deposition apparatus of FIG. 3.

According to an aspect of the present invention, there is provided a sheet type chemical vapor deposition apparatus comprising: a substrate support on which a substrate is horizontally mounted; A reaction chamber wall installed in connection with the substrate support to provide an independent reaction chamber, and having an opening at an upper portion thereof; A gas inlet tube having a diameter smaller than the opening and inserted into the opening so that a gap is formed in the opening; It is connected to the end of the gas inlet pipe and a predetermined distance from the reaction chamber wall is installed in the reaction chamber wall, the substrate support so that the gas flowing through the gas inlet pipe is uniformly sprayed on the substrate support A shower head having a plurality of injection holes is provided on the opposite surface, and the gas injected into the reaction chamber is allowed to flow out to a gap formed in the opening.

At this time, it is preferable to further include a heating wire surrounding the reaction chamber wall in order to configure the reaction chamber wall as a warm wall or a hot wall according to the use.

Further, the shower head is connected to the gas inlet pipe, the upper portion is connected to the gas distribution plate protection wall, the bottom surface is connected to the bottom surface of the gas distribution plate protection wall so as to face the substrate horizontally installed and the gas can pass through It is preferable that the gas dispersion plate having the injection hole is configured.

Furthermore, it is preferable to further include a reactor body for forming an appearance with respect to a predetermined region of the substrate support and the reaction chamber wall.

In addition, a plasma may be generated inside the reaction chamber to activate a gas in the reaction chamber.

According to an aspect of the present invention, there is provided a method of forming a thin film, the method comprising: seating a substrate on the substrate support; Pyrolysis gas includes a vapor deposition gas that forms a film but does not thermally decompose at a process temperature, a reactor gas that does not pyrolyze or decomposes itself at a process temperature, and a purge gas to prevent a gas phase reaction between the vapor deposition gas and the reaction gas. Preparing process gases; A time-division combination of the deposition gas, the reactor gas and the purge gas is periodically repeated to supply the reaction chamber through the inlet, and to activate the plasma on the substrate in synchronization with at least one supply cycle of the process gases. It characterized in that it comprises a step of generating.

At this time, the plasma is preferably generated in synchronization during the supply cycle of the reactor body.

Furthermore, the purge gas includes an element necessary for film formation, and the reactive gas is each selected to include other elements necessary for film formation; The purge gas and the reactor gas do not substantially react; The plasma may be generated in synchronization during the supply period of the purge gas.

According to another aspect of the present invention, there is provided a method of forming a thin film, comprising: placing a substrate on the substrate support; Pyrolysis provides a deposition gas that forms a film but does not pyrolyze at a process temperature, and a process gas including a purge gas for discharging the deposition gas from the reaction chamber, wherein the purge gas contains components necessary for forming a thin film, Providing that it is selected not to react substantially with said deposition gas when it is not activated; The time-divided combination of the deposition gas and the purge gas is periodically supplied to the reaction chamber through the inlet port, and the purge gas is generated by synchronizing with the plasma at least in part during the supply period of the purge gas. It characterized in that it comprises a step of reacting.

At this time, the plasma is preferably generated in synchronization during the supply period of the purge gas.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic diagram of a single wafer chemical vapor deposition apparatus according to the present invention, and FIG. 4 is an exploded perspective view of the single wafer chemical vapor deposition apparatus according to FIG. 3.

Referring to FIGS. 3 and 4, a heating apparatus capable of heating the substrate 400 is built in the substrate support 300 on which the substrate 400 is horizontally mounted. In addition, the plasma electrode 1010 is provided in a predetermined region of the surface on which the substrate 400 is seated, and the first connection terminal 910 that receives high frequency power from the outside is connected to the plasma electrode 1010. In this case, the first connection terminal 910 is inserted into and installed in the hole passing through the substrate support 300.

The reaction chamber wall 100 made of ceramic has an opening formed at an upper portion thereof, and a lower portion thereof is connected to the substrate support 300 to provide a reaction chamber 10 independent of the substrate support 300. A substrate support ring 600 made of ceramic is installed at the connection portion between the reaction chamber wall 100 and the substrate support 300 to secure the sealing property at the connection portion between the reaction chamber wall 100 and the substrate support 300. The gas inlet pipe 510 is inserted into an opening formed in the upper portion of the reaction chamber wall 100 and has a diameter smaller than that of the opening so that a gap 520a is formed between the opening and the opening.

The shower heads 210 and 220 are connected to the end of the gas inlet pipe 510 and are installed in the reaction chamber wall 100. The gap 520a between the opening of the reaction chamber wall 100 and the gas inlet pipe is connected to the reaction chamber 10. ). Here, the showerheads 210 and 220 may include a gas dispersion plate 210 and a gas dispersion plate protection wall 220. The gas distribution plate 210 is horizontally installed to face the substrate 400 and has a plurality of injection holes. At this time, the injection holes of the gas dispersion plate 210 are formed on the opposite surface of the substrate 400 and the side surface of the gas dispersion plate 210 so that the gas is uniformly sprayed on the substrate 400 and the process gases are switched. This is easy. The gas distribution plate protective wall 220 has a cylindrical shape with upper and lower portions open, and an upper portion is connected to the gas inlet pipe 510 and a gas dispersion plate 520 is installed at the lower portion. When the shower heads 210 and 220 are configured of the gas dispersion plate 210 and the gas dispersion plate protection wall 220, the gas dispersion plate 210 and the gas dispersion plate protection wall 220 are easily made of materials having different properties. There is an advantage that can be made. In the present embodiment, the gas dispersion plate 210 is made of aluminum, and the gas dispersion plate protective wall 220 is made of ceramic. The portion connected to the gas inlet pipe 510 of the gas distribution plate protective wall 220 is installed to gradually expand the inner diameter. Therefore, the gas injected from the gas inlet pipe 510 can be easily diffused around. In addition, a hole is formed at an edge at which the gas dispersion plate 210 and the gas dispersion plate protection wall 220 are connected to prevent an unnecessary thin film from being formed by accumulating the reactor at the corner.

The gas outlet pipe 520 is installed to be connected to the gap 520a between the opening of the reaction chamber wall 100 and the gas inlet pipe 510, and the gas outlet pipe 520 is connected to the vacuum pump 1400. Therefore, the reaction gas injected into the reaction chamber 10 through the gas dispersion plate 210 flows out into the gas outlet pipe 520 through the gap 520a between the reaction chamber wall 100 and the gas dispersion plate protection wall 220. do. '→' in Fig. 3 shows the flow direction of the reactor body.

The gas injected into the reaction chamber 10 through the gas dispersion plate 210 may be guided to the center region of the substrate 400, and the gas flow rate may be adjusted to control the gas flow rate from the region between the gas dispersion plate and the substrate surface. The gas flow guide ring 700 is attached to the inner wall of the dispersion plate protective wall 220. Then, the heating wire 800 is provided to surround the side wall of the reaction chamber wall 100 so that the reaction chamber wall can be configured as a warm wall or a heat wall according to the use.

The metal block 1000 is connected to the gas dispersion plate 210 and attached to the inner wall of the gas dispersion plate protection wall 220, and the second connection terminal 900 receiving high frequency power from the outside is provided with a block ( 1000). In this case, the second connection terminal 900 is inserted into and installed in the hole 900a penetrating through the reaction chamber wall 100 and the gas dispersion plate protection wall 220. When high frequency power is applied to the gas dispersion plate 210 through the second connection terminal 900, the reactive gas present in the reaction chamber is converted into a plasma, and a thin film is deposited on the substrate 400 by the plasma. Meanwhile, when the metallic thin film is deposited on the substrate 400 by the plasma chemical vapor deposition process, the metallic thin film is deposited in the gap 520a formed between the gas dispersion plate protective wall 220 and the reaction chamber wall 100. The thin film deposited in the gap 520a formed between the gas dispersion plate protective wall 220 and the reaction chamber wall 100 may cause electrical leakage and prevent plasma from being generated. Although not shown in the drawings to prevent this, a gas injection hole is provided in the gas outlet pipe 520 to be inert from the outside in the gap 520a formed between the gas distribution plate protection wall 220 and the reaction chamber wall 100 through the gas injection hole. Allow gas to flow in.

The reactor body 1100 forms a predetermined region of the reaction chamber wall 100 and the exterior of the substrate support 300, and has an inert gas inlet 1110, an inert gas outlet 1120, and a transparent window 1130 that can be opened and closed. . In addition, the reactor body 1100 is divided into an upper body 1100a and a lower body 1100b, and has an O-ring (O- ring) in order to secure sealing property at a connection portion between the upper body 1100a and the lower body 1100b. ring 1600 is inserted and installed. When the pressure inside the reactor body 1100 becomes higher than the pressure of the reaction chamber 10 formed on the substrate 400 by the inert gas introduced into the reactor body 1100 through the inert gas inlet 1110, the reaction chamber 10 The gas inside the) will not escape.

On the other hand, the portion indicated by the reference numeral 'A', that is, the contact portion of the substrate 400 and the substrate support 300 and the contact portion of the substrate support 300 and the central support pin 1310 which will be described later is a minute gap due to mechanical assembly Is formed. When the inert gas inside the reactor body 1100 flows through the gap, an inert gas atmosphere is formed between the substrate 400 and the substrate support 300 to prevent unnecessary thin film from being formed on the back surface of the substrate 400. In addition, the movement of the substrate 400 may be observed through the transparent window 1130 formed in the reactor body 1100.

The fasteners 1400 and the fastener grooves 1410 for connecting and fixing the upper body 1100a and the lower body 1100b are installed in the lower body 1100a and the upper body 1100b, respectively. Here, the clamp 1400 is operated pneumatically by the pneumatic cylinder 1500.

The substrate support driving unit for driving the substrate support 300 is a fixed shaft 1210 fixed to the reactor body 1100, a movable plate 1220 capable of vertically moving around the fixed shaft 1210, and moving. A driving shaft 1230 connected to the lower surface of the plate 1220 and interlocked with the moving plate 1230, a connecting plate 1240 connected to an upper portion of the driving shaft 1230 and interlocked with the driving shaft 1230, and a connecting plate ( 1240 and the substrate support 300 is composed of a fixing pin 1250 connecting them to interlock. At this time, the upper portion of the fixed shaft 1210 is preferably installed to be fixed to the lower portion of the reactor body (1100). When the moving plate 1220 moves up and down, the driving shaft 1230, the connecting plate 1240, and the substrate support 300 move up and down.

In order to easily detach the substrate 400 from the substrate support 300, a central support pin 1310 and a center support pin driver are installed. The central support pin 1310 forms a hole in the substrate support 300 and is inserted into and installed in the hole. The central support pin driving unit includes a central support pin 1310, a central shaft 1320 connected to the central support pin 1310, and a sealing fastener 1330 for fixing the central shaft 1320 to the reactor body 1100. do. At this time, the central shaft 1320 is preferably configured to penetrate the reactor body 1100.

In the operation of the substrate support driver and the central support pin driver, the substrate support 300 is raised when the thin film is deposited on the substrate 400 so that the substrate support ring 600 and the substrate support 300 contact each other. When deposition of the thin film is completed, the substrate support is lowered, but the substrate 400 is supported by the central support pin 1310, so that the substrate 400 is separated from the substrate support 300. At this time, the sealing fastener 1330 of the central support pin driving unit may be loosened, and the center shaft 1320 and the central support pin 1310 may be moved up and down to match the height of the substrate 400 and the substrate transfer apparatus installed separately from the outside.

In the single wafer type chemical vapor deposition apparatus according to the present invention, the gas inlet pipe and the gas outlet pipe are provided in the form of a double pipe at the same position, and the reaction chamber is made small. In addition, the reactant fluid is allowed to flow in a dual chamber such as a showerhead and the reaction chamber 10. In addition, the reaction chamber wall is electrically separated from the reaction chamber 10 by the gas dispersion plate protective wall 220 and the substrate support ring 600 made of insulated connection terminals and ceramics, so that the conductive thin film is also easily applied by applying plasma power. Can be deposited.

FIG. 5A is a flowchart illustrating a method of forming a thin film according to a first embodiment of the present invention performed by periodic chemical vapor deposition using the sheet type chemical vapor deposition apparatus of FIG. 3.

Referring to FIG. 5A, first, the substrate 400 is loaded into the reaction chamber 10 to seat the substrate 400 on the substrate support 300. Then, the substrate 400 is heated to a preset deposition temperature. Next, the deposition gas 11 is supplied to the reaction chamber 10 and adsorbed onto the substrate 400. At this time, when the vapor deposition gas 11 is a gas having poor adsorption property, the plasma generator is operated to plasma the vapor deposition gas 11 to improve the adsorption property of the vapor deposition gas 11.

Subsequently, the purge gas 12 is supplied to remove the vapor deposition gas 11 remaining unadsorbed from the reaction chamber 10. Then, when the reactor 13 is supplied to the reaction chamber 10 to reach a predetermined deposition pressure, the plasma generator is turned on to convert the reactor 13 into a plasma to adsorb the vapor deposition gas 11 adsorbed onto the substrate 400. Promote reaction with). When the supply of the reactor body 13 is stopped, the plasma generator is turned off to stop the plasma generation and the remaining reactor body 13 to the purge gas 12 is removed. The thin film having a target thickness is deposited by repeating a predetermined cycle in this process.

By using this method, even if the reactivity between the vapor deposition gas 11 and the reactor 13 is low, since the reactor 13 is activated by plasma, the periodic chemical vapor deposition method can be easily applied. On the other hand, in the case of using the metal organic compound raw material, if the reaction body 13 is made into plasma to increase the reactivity, decomposition of the metal organic compound may be promoted and carbon contamination of the thin film may be reduced. In addition, since the activation energy is supplied to the thin film, the crystallinity, physical properties, and electrical properties of the thin film can be greatly improved. However, when the plasma generator is turned on when the deposition gas 11 is supplied, particle contamination may occur or the step coverage may deteriorate since the metal raw material is decomposed in the gas state. Therefore, it is preferable to synchronize the RF power supplied to the plasma generator with the gas supply cycle by turning off the plasma generator when supplying the deposition gas 11 and turning on the power when supplying the reactor 13.

FIG. 5B is a flowchart illustrating a method of forming a thin film according to a second exemplary embodiment of the present invention performed by periodic chemical vapor deposition using the sheet type chemical vapor deposition apparatus of FIG. 3.

Referring to FIG. 5B, in the second embodiment of the present invention, a purge gas 12 containing little or no reactivity with the vapor deposition gas 11 but containing a thin film component is used. Referring to FIGS. 3 and 5B, the method of the second embodiment of the present invention will be described. First, the substrate 400 is loaded into the reaction chamber 10 and the substrate 400 is seated on the substrate support 300. Then, the substrate 400 is heated to a preset deposition temperature. Next, the deposition gas 11 is supplied to the reaction chamber 10 and adsorbed onto the substrate 400. In this case, when the vapor deposition gas 11 is a gas having poor adsorption property, the plasma gas generator is also plasma-operated by operating the plasma generator to improve the adsorption property of the vapor deposition gas 11.

Subsequently, after the deposition gas 11 remaining in the purge gas 12 is removed, the plasma generator is turned on to plasma the purge gas 12. The plasma reacts with the vapor deposition gas 11 adsorbed on the substrate 400 to form a thin film. Then, after stopping the reaction by turning off the plasma generator, the vapor deposition gas 11 may be supplied back into the reaction chamber 10 without fear of gas phase reaction. Therefore, the plasma generator is turned on and off in the order of supplying the purge gas 12 in the process gas supply cycle, and then the plasma generator is turned on and off in the order of purge gas 12 to react gas. (13) → The effect of supplying the purge body 12 can be obtained. In addition, since the concentration of the activated chemical species decreases very quickly when the plasma generator is turned off, the time for flowing the purge gas 12 after turning off the plasma generator can be minimized. That is, in such a gas supply, a gas supply cycle may not be determined according to the type and supply time of the gas, but may be determined by turning on and off the plasma generator. By using this method, since periodic chemical vapor deposition can be performed with only two kinds of gases, the configuration of the gas supply portion can be simplified, and the cycle time required for time-division raw material supply can be reduced. In this method, the vapor deposition gas 11 and the purge gas 12 do not react with each other even if they are mixed in the exhaust part including the outlet 520, so that there is no fear of generating contaminated particles.

As described above, according to the sheet-type chemical vapor gas phase apparatus of the present invention, the gas inlet pipe and the gas outlet pipe are provided in the form of a double pipe at the same position, thereby preventing the reaction gas in the reaction chamber from being biased toward the gas outlet pipe. Thus, the flow of the reactant in the reaction chamber is maintained symmetrically with respect to the substrate to deposit a uniform thin film on the substrate and improve the efficiency of the reactant than before. Since the showerhead and the reaction chamber can be configured smaller than before. Therefore, it is easy to convert the reactor in a process in which several kinds of reactors are sequentially introduced.

Furthermore, since the reaction gas flows in a dual chamber, for example, a showerhead and a reaction chamber, unnecessary thin films are prevented from being deposited on the substrate backside and the substrate support.

Furthermore, by further comprising a plasma generating device, it is possible to generate a plasma in the reaction chamber to activate the reactor.

In addition, according to the present invention, it is possible to form a thin film effectively even in the case where the reaction bodies are not reactive or very weak in periodic chemical vapor deposition.

Furthermore, in the periodic chemical vapor deposition method, the process time may be shortened by minimizing the supply time of the purge gas during the process gas supply cycle.

Furthermore, it is possible to reduce the generation of contaminant particles in the exhaust of the apparatus in which the periodic chemical vapor deposition method is performed.

The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (15)

A substrate support on which the substrate is horizontally seated; A reaction chamber wall installed in connection with the substrate support to provide an independent reaction chamber, and having an opening at an upper portion thereof; A gas inlet tube having a diameter smaller than the opening and inserted into the opening so that a gap is formed in the opening; It is connected to the end of the gas inlet pipe and a predetermined distance from the reaction chamber wall is installed in the reaction chamber wall, the substrate support so that the gas flowing through the gas inlet pipe is uniformly sprayed on the substrate support Single-head chemical vapor deposition apparatus having a shower head having a plurality of injection holes on the opposite surface, the gas injected into the reaction chamber to outflow into the gap formed in the opening. The single wafer type chemical vapor deposition apparatus according to claim 1, further comprising a hot wire provided to surround the reaction chamber wall. The single phase chemical vapor deposition apparatus according to claim 1, further comprising a plurality of injection holes in the side of the shower head. According to claim 1 or 3, wherein the shower head, the upper portion is connected to the gas inlet pipe, the bottom surface is open and connected to the bottom surface of the gas distribution plate protective wall so as to face the substrate and horizontally Single-phase chemical vapor deposition apparatus is installed, characterized in that consisting of a gas dispersion plate having the injection hole through which gas can pass. 5. The sheet type chemical vapor deposition apparatus according to claim 4, wherein the reaction chamber wall and the gas dispersion plate protective wall are made of ceramic, and the gas dispersion plate is made of metal. 6. The inner wall of the gas distribution plate protective wall according to claim 5, wherein a connection terminal provided through the reaction chamber wall and the gas dispersion plate protection wall and insulated from the reaction chamber wall, and the gas dispersion plate and the connection terminal are connected to each other. A sheet type chemical vapor deposition apparatus, comprising: a block made of a metal attached to and installed on the substrate. The gas dispersion plate protective wall of claim 4, wherein the reaction gas injected into the reaction chamber through the gas dispersion plate is directed to a center region of the substrate and the flow rate of the gas deviating from the region between the gas dispersion plate and the substrate surface is controlled. Single phase chemical vapor deposition apparatus comprising a gas flow guide ring on the inner wall of the. The single wafer type chemical vapor deposition apparatus according to claim 1, wherein a plasma electrode is installed on the substrate support to activate a gas introduced into the reaction chamber. 2. The single phase chemical vapor deposition apparatus according to claim 1, further comprising a substrate support ring between the substrate support and the reaction chamber wall. The single wafer type chemical vapor deposition apparatus according to claim 1, further comprising a reactor body having an exterior of the substrate support and a predetermined region of the reaction chamber wall and having a gas outlet opening and closing. 11. The sheet type chemical vapor deposition apparatus according to claim 10, further comprising a transparent window in the reactor body. A substrate support on which the substrate is horizontally seated; A reaction chamber wall installed in connection with the substrate support to provide an independent reaction chamber, and having an opening at an upper portion thereof; A gas inlet tube having a diameter smaller than the opening and inserted into the opening so that a gap is formed in the opening; A gas dispersion plate protective wall connected to an end of the gas inlet pipe and spaced apart from the reaction chamber wall by a predetermined distance, the upper part of which is connected to the gas inlet pipe, and the bottom of which is open and made of ceramic; A shower head comprising a gas distribution plate made of a metal having a plurality of injection holes on the opposite surface of the substrate support such that the gas introduced through the gas inlet pipe is uniformly sprayed on the substrate support; A connection terminal provided through the reaction chamber wall and the gas dispersion plate protection wall; A block made of metal attached to an inner wall of the gas dispersion plate protective wall while connecting the gas dispersion plate and the connection terminal; In the method of forming a thin film using a sheet-type chemical vapor deposition apparatus having a plasma electrode provided on the substrate support, Mounting a substrate on the substrate support; Decomposition gas that forms a film when thermally decomposes, but does not pyrolyze at a process temperature, a reactor gas that does not pyrolyze itself or decomposes itself at a process temperature, and a purge gas to prevent a gas phase reaction between the vapor gas and the reactor gas. Preparing process gases including a; A time-division combination of the deposition gas, the reactor gas and the purge gas is periodically repeated to supply the reaction chamber through the inlet, and to activate the plasma on the substrate in synchronization with at least one supply cycle of the process gases. Thin film formation method comprising the step of generating. 13. The method of claim 12, wherein the plasma is generated in synchronization during a supply cycle of the reactor body. 13. The method of claim 12, wherein the purge gas is selected to include elements necessary for film formation, and the reactive gas is each selected to include other elements necessary for film formation; The purge gas and the reactor gas do not substantially react; And the plasma is generated in synchronization during the supply period of the purge gas. A substrate support on which the substrate is horizontally seated; A reaction chamber wall installed in connection with the substrate support to provide an independent reaction chamber, and having an opening at an upper portion thereof; A gas inlet tube having a diameter smaller than the opening and inserted into the opening so that a gap is formed in the opening; A gas dispersion plate protective wall connected to an end of the gas inlet pipe and spaced apart from the reaction chamber wall by a predetermined distance, the upper part of which is connected to the gas inlet pipe, and the bottom of which is open and made of ceramic; A shower head comprising a gas distribution plate made of a metal having a plurality of injection holes on the opposite surface of the substrate support such that the gas introduced through the gas inlet pipe is uniformly sprayed on the substrate support; A connection terminal provided through the reaction chamber wall and the gas dispersion plate protection wall; A block made of metal attached to an inner wall of the gas dispersion plate protective wall while connecting the gas dispersion plate and the connection terminal; and using a single-sheet chemical vapor deposition apparatus having a plasma electrode installed on the substrate support. In the method of forming a thin film, Positioning a substrate on the substrate support; Pyrolysis provides a deposition gas that forms a film but does not thermally decompose at a process temperature, and a process gas including a purge gas for discharging the deposition gas from the reaction chamber, wherein the purge gas contains components necessary for forming a thin film, Preparing to be selected not to substantially react with the deposition gas when not in an activated state; The time-divided combination of the deposition gas and the purge gas is periodically supplied to the reaction chamber through the inlet port, and the purge gas is generated by synchronizing with the plasma at least in part during the supply period of the purge gas. A thin film forming method comprising the step of reacting.