KR20000066722A - Lower electrode part of cvd apparatus - Google Patents

Abstract

PURPOSE: A lower electrode part of a chemical vapor deposition apparatus is provided to improve thermal transfer efficiency to a semiconductor wafer so as for a thin film of a good quality to be formed. CONSTITUTION: A lower electrode part of a chemical vapor deposition apparatus comprises a susceptor(210), a heater(212) and a base(214). The heater(212) applies heat to a semiconductor wafer(215), and the base(214) supports the susceptor(210). The lower electrode part includes a gas supply line(216), which is extended from an opening(215) of the base(214) to a portion between the heater(212) and the base(214). The gas supply line(216) has an outlet(216a), which penetrates the heater(212) so as to be located at the lower center of the susceptor(210). Gas from the exterior flows into the lower center of the susceptor(210).

Description

LOWER ELECTRODE PART OF CVD APPARATUS}

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a lower electrode portion of a chemical vapor deposition apparatus for forming a thin film on a semiconductor wafer.

A chemical vapor deposition process is one of semiconductor manufacturing processes in which a compound gas is supplied onto the semiconductor wafer in a semiconductor manufacturing process to generate a gaseous or chemical reaction on the surface of the semiconductor wafer to form a desired film quality.

1 is a diagram illustrating a lower electrode portion of a conventional chemical vapor deposition apparatus. Specifically, Figure 1 is an example of a GENUS 7000 model facility for depositing metal thin films.

Referring to FIG. 1, a semiconductor wafer 102 is placed on an upper surface of a susceptor 104. The heater 106 is positioned under the susceptor 104. Underneath the heater 106 is a base 108 for supporting the susceptor 104. A predetermined space 107 is formed between the base 108 and the heater 106, and argon (Ar) gas is injected into the opening 110 formed on one surface of the base 108. The heater 106 generates high temperature heat (about 400 degrees), and the heat is transferred to the semiconductor wafer 102 through the susceptor 104. In this case, since the chemical vapor deposition apparatus proceeds at low pressure, the mass transfer rate of gas is very large, and the process is affected by temperature. Thus, the flow of the argon gas flowing between the susceptor 104 and the heater 106 loaded with the semiconductor wafer 102 plays an important role in heat transfer.

However, since the argon gas is supplied in a manner of being injected from the opening 110, the density and distribution of argon gas in the predetermined space 107 are changed, so that the argon gas is supplied from the heater 106 to the semiconductor wafer 102. Temperature transfer becomes unstable, causing a problem that uniform heat transfer to the semiconductor wafer 102 does not occur, and heat loss is also generated due to heat being transferred to the inner wall of the process chamber at a relatively low temperature. .

The present invention has been made to solve such a conventional problem, and an object thereof is to provide a lower electrode portion of a new type chemical vapor deposition apparatus capable of improving heat transfer to a semiconductor wafer.

1 is a diagram for showing a lower electrode portion of a conventional chemical vapor deposition apparatus;

2 is a diagram for schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention;

3 is a diagram showing a lower electrode portion of a chemical vapor deposition apparatus according to an embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

200: chemical vapor deposition apparatus 202: injection hole

204: high frequency power supply 206: gas diffusion plate

208: gas injection plate 210: susceptor

212 heater 214 base

215: opening 216: gas supply line

217: semiconductor wafer

According to a feature of the present invention for achieving the above object, the lower electrode portion of the chemical vapor deposition apparatus for depositing a thin film on a semiconductor wafer includes a susceptor, a base, a heater and a gas supply line. The semiconductor wafer is loaded into the susceptor. The base supports the susceptor at the bottom of the susceptor. The heater is located between the susceptor and the base, and serves to heat the susceptor. The gas supply line is guided between the heater and the base from the side of the base so that an outlet is located at the center of the susceptor lower portion through the heater, and the gas supplied from the outside is lower than the lower portion of the susceptor. Allow it to enter the center.

Application of this invention improves heat transfer to the semiconductor wafer during the deposition process, resulting in the formation of a high quality thin film and consequently the yield of the semiconductor wafer.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 2 to 3. Like reference numerals designate like elements.

2 is a diagram for schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 3 is a diagram for showing a lower electrode portion of the chemical vapor deposition apparatus according to an embodiment of the present invention.

2 and 3, a chemical vapor deposition method in which a highly reactive gaseous compound is injected into a reactor and activated using light, heat, plasma, microwave, or electric field to form a high quality film on a semiconductor substrate. Although there are disadvantages in that harmful gases are frequently used, they are widely used due to the advantages of being suitable for the synthesis of high purity materials and having various applications. The chemical vapor deposition apparatus may be classified into various items according to a method of exciting a gas, a raw material, a temperature of a gas phase or a substrate, a pressure of a reactive component, and the like. Commonly used systems are atmospheric pressure CVD, low pressure CVD, plasma enhanced CVD and metal organic CVD. ).

In the chemical vapor deposition apparatus according to the embodiment of the present invention, a compound gas such as WF ₆ or SiH _{4 is} brought into a low pressure state of 0.1 to several Torr using a vacuum pump to react the gas under a constant temperature so that tungsten or It is a low pressure thin film chemical vapor deposition system for making tungsten silicide film. The chemical vapor deposition apparatus 200 includes an inlet 202 of a process gas, a high frequency power supply unit 204 to which high frequency power for dry cleaning is supplied, a gas diffusion plate 206 and a gas for supplying gas required for a process A jet plate 208 is provided, wherein the devices described above are located in the upper electrode portion A. FIG. The susceptor 210, the heater 212, and the base 214 on which the semiconductor wafer 217 is loaded are positioned in the lower electrode portion B corresponding to the upper electrode portion A. FIG. The heater 212 applies heat of about 400 degrees to the semiconductor wafer 217. The base 214 supports the susceptor 210. In addition, the gas supply line 216 is led between the heater 212 and the base 214 from the opening 215 of one surface of the base 214 so that the outlet 216a penetrates the heater 212. It is formed to be located at the center of the lower susceptor 210 so that the gas supplied from the outside flows into the center of the lower part of the susceptor 210. Argon (Ar) gas, which is conventionally injected from one surface of the base 214, flows along the gas supply line 216 and flows through the outlet 216a positioned at the center of the susceptor 210 below. flow). The argon gas flowing through the gas supply line 216 does not disperse as conventionally and flows directly into the susceptor 210 by coming into contact with the surface of the heater 212, thereby mediating the temperature transfer to the susceptor 210. Can improve. Since heat transfer to the susceptor 210 is improved, heat may be effectively transferred to the semiconductor wafer 217 loaded on the susceptor 210.

Application of this invention improves heat transfer to the semiconductor wafer during the deposition process, resulting in the formation of a high quality thin film and consequently the yield of the semiconductor wafer.

Claims (2)

In the lower electrode portion of the chemical vapor deposition apparatus, A susceptor on which the semiconductor wafer is placed; A base for supporting the susceptor below the susceptor; A heater, positioned between the susceptor and the base, for heating the susceptor; A gas which is guided from the side of the base to the heater and the base so that an outlet is located at the center of the lower part of the susceptor through the heater, and the gas supplied from the outside flows into the center of the lower part of the susceptor A lower electrode portion of a chemical vapor deposition apparatus comprising a supply line. The method of claim 1, The gas is the lower electrode of the chemical vapor deposition apparatus, characterized in that the Ar gas.