KR101385593B1 - Atomic layer deposition system and method thereof - Google Patents

Abstract

An atomic layer deposition apparatus and a deposition method thereof are disclosed. An atomic layer deposition apparatus according to an embodiment of the present invention is the atomic layer deposition chamber unit, the atomic layer deposition chamber unit is supplied to the raw material precursor and the reaction precursor is supported on the susceptor and the atomic layer deposition chamber unit, A precursor supply unit provided to supply any one of a raw material precursor and a reactive precursor to the reaction precursor; A precursor scanning unit installed inside the atomic layer deposition chamber unit to release the other of the raw material precursor and the reaction precursor onto the substrate, and a scanning driving unit installed inside the atomic layer deposition chamber unit to move the precursor scanning unit do.

Description

TECHNICAL FIELD The present invention relates to an atomic layer deposition apparatus and a deposition method thereof,

The present invention relates to an atomic layer deposition apparatus and a deposition method thereof. More particularly, the present invention relates to an atomic layer deposition apparatus and a deposition method thereof. More particularly, the present invention relates to an atomic layer deposition apparatus and a deposition method thereof that deposit a layer of a raw material precursor on a substrate, To an atomic layer deposition apparatus capable of depositing a desired thickness of a thin film by repeating a series of processes and a deposition method thereof.

In the atomic layer deposition method, the gases of the reaction source material are flowed into the reaction tube periodically crossing each other at regular time intervals, whereby the material is grown in such a manner that one atomic layer is successively grown in each reaction step.

The atomic layer deposition method includes a showerhead method in which a substrate is uniformly sprayed on a substrate to be deposited thereon, and a traveling wave method in which the substrate is discharged from one end of the substrate to the other end of the substrate.

Deposition through atomic layer deposition (ALD) has the advantage that the thickness can be controlled more precisely than the conventional deposition method at the atomic layer level in the thickness control. On the other hand, the atomic layer deposition method requires a repetitive cycle of the process because the thin film on the substrate can only play a given role if it is thicker than a certain thickness.

That is, the deposition layer through the atomic layer deposition (ALD) has a disadvantage in that the thickness of the deposition layer is slow. However, the number of cycles to be formed in order to form the multilayer deposition film in the atomic layer deposition chamber The final thickness of the film formation layer can be precisely controlled.

These atomic layer deposition methods are mainly used for thin film uniformity, thin film characteristics improvement, and fine patterns and high-permittivity material deposition in a semiconductor process. The atomic layer deposition apparatus for performing atomic layer deposition has a shower head for uniform injection of gas A flow rate control device (MFC) and a valve for periodically supplying a process gas or a purge gas, a susceptor for heating while supporting the substrate, and an exhaust port for exhausting the process gas.

However, despite the advantages of the conventional atomic layer deposition apparatus, the throughput of the display due to the increase of the volume due to the large area, the throughput due to the increase of the purge time, the problem of the large area uniformity, Due to various mechanical stability problems, practical application was difficult.

That is, when the atomic layer deposition apparatus used in the semiconductor is used as it is in the large-area display process, the throughput is reduced due to the increase in the deposition time and the purge time due to the increase in the volume due to the large area, the uniformity of the deposited thin- There is a problem that the cost increase and the yield reduction of the product are expected due to the mechanical stability problem due to the enlargement.

[Patent Document 1] Korean Patent Application No. 10-2000-52436

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a semiconductor device, which is excellent in throughput despite the increase in deposition time and purge time due to the increase in volume due to a large area, And to provide an atomic layer deposition apparatus and a deposition method thereof capable of ensuring mechanical stability upon enlargement.

According to an aspect of the present invention, an atomic layer deposition chamber unit is supplied with a raw material precursor and a reaction precursor and atomic layer deposition is performed on a substrate supported on a susceptor; A precursor supply unit provided to supply one of the raw material precursor and the reaction precursor into the atomic layer deposition chamber unit; A reaction promoting unit for increasing the reactivity of any one of the raw material precursor and the reaction precursor supplied by the precursor supply unit; A precursor scanning unit installed in the atomic layer deposition chamber unit so as to be movable relative to the substrate to emit another one of the source precursor and the reaction precursor onto the substrate; And a scanning driving unit installed inside the atomic layer deposition chamber unit to move the precursor scanning unit.

The precursor supply unit may include a diffuser unit installed to supply one of the raw material precursor and the reaction precursor to the atomic layer deposition chamber unit, and the reaction promotion unit may be provided in the diffuser unit.

The diffuser unit may include: an upper electrode block connected to a precursor supply pipe supplying any one of the source precursor and the reaction precursor; A lower electrode block provided with pores so as to evenly flow out one of the source precursor and the reaction precursor onto the substrate; And it may include a power supply connected to any one of the upper electrode block and the lower electrode block.

The diffuser unit may further include an insulator gap block for insulating and coupling the upper electrode block and the lower electrode block.

The reaction facilitating unit may include a plasma generating unit installed outside the atomic layer deposition chamber unit to generate a plasma in any one of the raw material precursor and the reaction precursor.

The precursor supply unit includes a diffuser unit installed to supply one of the source precursor and the reaction precursor to the atomic layer deposition chamber unit, wherein the diffuser unit is disposed above the atomic layer deposition chamber, A diffuser block provided with pores; And an insulator gap block coupling the diffuser block to an upper wall of the atomic layer deposition chamber.

The reaction promoting unit may be a heat source provided in the susceptor to increase the reactivity of any one of the raw material precursor and the reaction precursor adsorbed on the substrate.

The precursor scanning unit may include: a scanning block spaced apart from the substrate and moved by the scanning driving unit; A precursor supply unit disposed in the scanning block to supply the other of the source precursor and the reaction precursor to the substrate; A precursor discharge part spaced apart from the precursor supply part and disposed in the scanning block to discharge another one of the reaction precursor and the raw material precursor supplied from the precursor supply part; And a purge gas supply unit disposed in the scanning block to surround the precursor supply unit and the precursor discharge unit to supply a purge gas.

The precursor scanning unit may further include a scan material supply unit installed in the atomic layer deposition chamber unit and connected to the scanning block and supplying the other one of the source precursor and the reaction precursor and the purge gas to the scanning block. can do.

The scan material supply unit may include: a box arthropod having a plurality of joints coupled to one region of the scanning block and folded when the scanning block moves; And a transport support provided in the atomic layer deposition chamber unit to which the box joints are rotatably coupled.

The scanning block may be provided in plural, and the plurality of box joints may be adjacent to each other and the carrier supports alternately disposed on one side and the other side of the atomic layer deposition chamber unit along the susceptor.

The scanning driving unit may include a linear motor coupled to the atomic layer deposition chamber unit and the scanning block to move the scanning block.

The scanning driving unit may include a reciprocating roller unit disposed to be spaced apart from each other with the susceptor interposed therebetween in the atomic layer deposition chamber unit; A reciprocating moving part installed in the reciprocating roller unit so as to be relatively movable and coupled to the scanning block; And a cover unit coupled to the reciprocating unit and surrounding the reciprocating roller unit.

According to another aspect of the invention, the step of loading the substrate into the atomic layer deposition chamber unit to support on the susceptor; Supplying any one of a source precursor and a reaction precursor into the atomic layer deposition chamber unit by a precursor supply unit; Raising the reactivity of any one of the raw material precursor and the reaction precursor by a reaction promoting unit; And a precursor scanning unit for supplying the other one of the raw material precursor and the reactive precursor to the substrate by a predetermined region to perform atomic layer deposition in a scanning manner by relatively moving on the substrate. Can be.

Increasing the reactivity of any one of the source precursor and the reaction precursor may include generating a plasma in any one of the source precursor and the reaction precursor.

Generating a plasma in any one of the source precursor and the reaction precursor, the plasma is generated in the diffuser portion for supplying any one of the source precursor and the reaction precursor in the atomic layer deposition chamber unit Generating the plasma by the method.

Generating the plasma in any one of the source precursor and the reaction precursor, the plasma generation unit is disposed in the supply path of any one of the source precursor and the reaction precursor outside the atomic layer deposition chamber unit It may comprise the step of generating the plasma by.

Increasing the reactivity of any one of the source precursor and the reaction precursor, when the one of the source precursor and the reaction precursor is supplied to the inside of the atomic layer deposition chamber unit is adsorbed on the substrate, and Heating any one of the reaction precursors by a heat source of the susceptor on which the substrate is supported.

According to the present invention, a precursor scanning unit moves in a scanning manner on a substrate in a state in which a precursor precursor or a reaction precursor is changed to a radical state in order to promote a deposition reaction in an atomic layer deposition chamber unit by a predetermined region. The other one of the precursors is continuously released, and the emission precursor reacts with the precursor supplied by the predetermined region to form the deposition material and the deposition film on the substrate, thereby increasing the deposition time and the purge time due to the volume increase due to the large area. In spite of the increase, the throughput is excellent, the uniformity of the deposited thin film in the large area is excellent, and the mechanical stability according to the enlargement can be ensured.

1 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a perspective view showing the inside of an atomic layer deposition apparatus according to an embodiment of the present invention.
3 is a perspective view of a precursor scanning unit of an atomic layer deposition apparatus according to an embodiment of the present invention.
4 is a cross-sectional view of a scanning driving unit of an atomic layer deposition apparatus according to an embodiment of the present invention.
5 is a cross-sectional view according to another embodiment of a scanning driving unit of an atomic layer deposition apparatus according to an embodiment of the present invention.
6 is a cross-sectional view of an atomic layer deposition apparatus according to another embodiment of the present invention.
7 is a cross-sectional view of an atomic layer deposition apparatus according to another embodiment of the present invention.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements. Hereinafter, various substrates for fabricating large-area panels such as OLED display panels and solar panels, as well as glass substrates, can be used as the substrate. In addition, the reaction precursor, the raw material precursor, and the plasma for atomic layer deposition are indicated in the drawings by R, S, and P, respectively, and the flow direction of each gas is indicated by an arrow. Among the terms used in this embodiment, the deposition material generally refers to a reaction precursor, a raw material precursor, or a product produced by a chemical reaction between a reaction precursor and a raw material precursor.

1 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is a perspective view showing the inside of an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 3 is a view of the present invention 4 is a perspective view of a precursor scanning unit of an atomic layer deposition apparatus according to an embodiment, FIG. 4 is a cross-sectional view of a scanning driving unit of an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 5 is according to an embodiment of the present invention; A cross-sectional view according to another embodiment of a scanning drive unit of an atomic layer deposition apparatus.

1 and 5, in the atomic layer deposition apparatus according to an embodiment of the present invention, an atomic layer for a substrate 101 supplied with a raw material precursor and a reaction precursor and supported on the susceptor 103. An atomic layer deposition chamber unit 100 in which deposition is performed, a precursor supply unit 110 provided to supply one of a raw material precursor and a reaction precursor into the atomic layer deposition chamber unit 100, and a precursor supply unit ( The reaction promotion unit 120 to increase the reactivity of any one of the raw material precursor and the reaction precursor supplied by the 110 and the substrate 101 is installed inside the atomic layer deposition chamber unit 100 so as to be movable relative to the raw material. A precursor scanning unit 130 emitting the other one of the precursor and the reactive precursor onto the substrate 101, and a scanning driving unit installed inside the atomic layer deposition chamber unit 100 to move the precursor scanning unit 130 ( Contains 170) The.

According to the present embodiment, the atomic layer deposition chamber unit 100 has a rectangular parallelepiped shape, and the substrate 101 is supported on the susceptor 103 to provide a deposition space in which deposition can be performed, and the airtightness is maintained for the outside. Thus, the inside of the substrate may be evacuated before the substrate 101 is carried in, and an opening 104 may be formed to enter and exit the substrate 101, which may be opened or closed by a gate valve or the like. In this case, the opening 104 is formed to face each other to be carried out to one side and to be carried out to the other side after the atomic layer deposition is completed, but only one of the openings 104 may be formed to both carry in and out of one side.

In addition, a supply port 105 is provided at an upper portion of the atomic layer deposition chamber unit 100 so that any one of a raw material precursor and a reaction precursor is supplied, and an exhaust port 106 is disposed at the other side so that any one of the raw material precursor and the reaction precursor is sucked out and discharged. ) May be provided.

The atomic layer deposition chamber unit 100 may be continuously or intermittently supplied to the substrate 101 of the atomic layer deposition chamber unit 100 by one of a raw material precursor and a reaction precursor by an amount necessary for deposition. .

At this time, any one of the raw material precursor and the reaction precursor is evenly supplied onto the substrate 101 from the upper center or the outer periphery of the atomic layer deposition chamber unit 100 and then flows down the substrate 101 to be discharged through the exhaust port 106. Can be. That is, not only one of the raw material precursor and the reaction precursor is sufficiently supplied at a constant pressure to be adsorbed onto the substrate 101 supported on the susceptor 103 of the atomic layer deposition chamber unit 100, but also the raw material precursor and the reaction. Any one of the precursors may be supplied to flow on the substrate 101 from one upper portion of the atomic layer deposition chamber unit 100 to the other lower portion. According to the present exemplary embodiment, the raw material precursor flows into the supply port 105, passes through the substrate 101, and then may be discharged to the exhaust port 106.

In addition, the atomic layer deposition chamber unit 100 is a cluster-type atom in which a process is performed while the substrate 101 is moved to a plurality of chamber units (not shown) arranged around one chamber unit (not shown). In addition to being disposed in a layer deposition process facility, the substrate 101 may be disposed in an inline atomic layer deposition process facility in which a process is performed while moving a plurality of chamber units arranged in a line. In this case, the position of the opening 104 of the atomic layer deposition chamber unit 100 may be variously changed depending on whether the atomic layer deposition process is performed by a cluster method or an inline method.

The precursor scanning unit moves on the substrate 101 while any one of a raw material precursor and a reaction precursor is supplied and adsorbed onto the substrate 101 through the supply port 105 of the atomic layer deposition chamber unit 100. The atomic layer deposition on the substrate 101 may be performed by discharging the other one of the raw material precursor and the reaction precursor by the 130. According to the present embodiment, the reaction precursor may be provided by the precursor scanning unit 130.

To this end, the supply port 105 of the atomic layer deposition chamber unit 100 is provided with a precursor supply unit 110 for supplying any one of the raw material precursor and the reaction precursor on the substrate 101. At this time, any one of the raw material precursor and the reaction precursor supplied by the precursor supply unit 110 may be changed to a highly reactive radical state by the reaction promotion unit 120.

The precursor supply unit 110 includes a diffuser unit 111 installed to supply one of a raw material precursor and a reaction precursor to the atomic layer deposition chamber unit 100, and the reaction promotion unit 120 includes a raw material. It may include an electrode (not shown) provided to generate a plasma in any one of the precursor and the reaction precursor.

That is, the diffuser unit 111 is manufactured to have electrodes (not shown) of the reaction promoting unit 120, respectively, and is connected to the precursor supply pipe 112 for supplying any one of a precursor precursor and a reactant precursor atomic layer deposition chamber unit. The upper electrode block 113 installed inside the 100 and the pores 115 are provided to evenly flow out one of the source precursor and the reaction precursor onto the substrate 101 so as to face the upper electrode block 113. The lower electrode block 114 may be disposed.

The electrode (not shown) of the reaction promoting unit 120 may be provided integrally by manufacturing the upper electrode block 113 and the lower electrode block 114 from a metal material, and the upper electrode block 113 and the lower electrode block. A portion of the 114 may be separately installed of a metal material having good conductivity, corrosion resistance, heat resistance, and the like. In this case, one side of the upper electrode block 113 and the lower electrode block 114 to which a power supply is connected may be a high voltage electrode, and the other side may be a ground electrode.

Accordingly, the diffuser unit 111 according to the present embodiment may further include a power supply unit 121 connected to any one of the upper electrode block 113 and the lower electrode block 114. The power supply unit 121 may be a high voltage wire that may prevent a short circuit of the raw material precursor and the reaction precursor.

In addition, the diffuser unit 111 may further include an insulator gap block 116 that insulates and couples the upper electrode block 113 and the lower electrode block 114. The insulator gap block 116 blocks direct current supply of the upper electrode block 113 and the lower electrode block 114 to generate plasma due to a high voltage between the upper electrode block 113 and the lower electrode block 114. Can provide play. The insulator gap block 116 may be made of a material that can withstand ultra high voltage, such as ceramic.

According to the present embodiment, the raw material precursor is supplied by the precursor supply pipe 112, and the reaction precursor is supplied by the precursor scanning unit 130. The reaction precursor is released on the substrate 101 when the precursor scanning unit 130 is moved onto the substrate 101 by the scanning driving unit 170.

That is, according to the present embodiment, the raw material precursor is to be supplied between the upper electrode block 113 and the lower electrode block 114 through the precursor supply pipe 112 installed in the supply port 105 of the atomic layer deposition chamber unit 100. When a high voltage is supplied to any one of the upper electrode block 113 and the lower electrode block 114 through the power supply 121, plasma may be generated between the upper electrode block 113 and the lower electrode block 114. have.

At this time, the plasma excites the supplied raw material precursor into a radical state, and the raw material precursor excited in the radical state is supplied to the substrate 101 through the pores 115 of the lower electrode block 114 and adsorbed onto the substrate 101. Can be. At this time, since the precursor precursor is changed into a radical state by the plasma of the reaction promotion unit 120, the chemical reactivity of the reactant precursor is increased, and the deposition material generated from the precursor precursor and the reactant precursor is smoothly deposited on the substrate 101. Can be.

An electrode (not shown) provided in the upper electrode block 113 and the lower electrode block 114 of the reaction promotion unit 120 according to the present embodiment may have a chemical reaction with one of a raw material precursor and a reaction precursor. In order to increase the deposition property on the substrate 101 by generating a plasma before changing to a radical state, the scope of the present invention is an electrode (not shown) provided in the upper electrode block 113 and the lower electrode block 114. The present invention is not limited thereto, and only one of the upper electrode block 113 and the lower electrode block 114 exists and a corresponding electrode (not shown) is present on the inner wall of the atomic layer deposition chamber unit 100 to generate plasma. May also be employed.

In addition, the electrode (not shown) according to the present embodiment is for providing a radical state of any one of a precursor precursor and a reaction precursor, and excites atoms by high voltage so that atomic layer deposition is promoted in the substrate 101. Plasma can be generated using the susceptor 103 supporting the substrate 101 by moving the diffuser unit 111 adjacent to the susceptor 103 as a corresponding ground, as well as the precursor scanning unit 130. Likewise, a scanning ground block (not shown) that is movably installed in the atomic layer deposition chamber unit 100 may be used as one of both electrodes.

As described above, after the precursor supply unit 110 and the reaction facilitating unit 120 for supplying any one of the raw material precursor and the reaction precursor, the precursor for discharging the other of the raw material precursor and the reaction precursor onto the substrate 101. The scanning unit 130 will be described in detail.

The precursor scanning unit 130 is spaced apart from the substrate 101 and moved by the scanning driving unit 170. The scanning block 131 is disposed in the scanning block 131, and the other of the raw material precursor and the reaction precursor is disposed on the substrate. The precursor supply unit 132 to be supplied to the 101 and the precursor supply unit 132 is spaced apart from the scanning block 131, the precursor for discharging the other one of the reaction precursor and the raw material precursor supplied from the precursor supply unit 132 The discharge unit 133 may include a purge gas supply unit 135 disposed in the scanning block 131 to surround the precursor supply unit 132 and the precursor discharge unit 133 to supply the purge gas.

The scanning block 131 of the precursor scanning unit 130 is disposed in the width direction of the substrate 101 and moves along the length direction of the substrate 101, while the other of the raw material precursor and the reaction precursor is placed on the substrate 101. It can emit on the substrate 101 by a scanning method by the continuous movement as the area occupied by. In this case, the scanning block 131 according to the present embodiment may emit the reaction precursor.

The scanning block 131 according to the present embodiment is disposed in the width direction of the substrate 101 and moves along the length direction. However, the scanning block 131 may be disposed in the opposite direction and thus moved along the width direction of the substrate 101. The range is not limited to moving the scanning block 131 along either side of the substrate 101.

According to the present embodiment, the scanning block 131 is provided with a precursor discharge unit 133 spaced apart from the precursor supply unit 132 to discharge the surplus amount of the reaction precursor supplied from the precursor supply unit 132. The precursor discharger 133 provides a discharge passage for discharging excess inflow of the reaction precursor discharged to the precursor supplier 132.

The precursor discharger 133 may suck and discharge unnecessary product generated by reacting with a raw material precursor in a radical state that is not adsorbed to the substrate 101 and an excess of the reactant precursor when atomic layer deposition is performed. A cleaning operation for performing layer deposition is performed in parallel so that the next precursor provided can be uniformly adsorbed onto the substrate 101.

In this case, the discharged reaction precursor may be stored in a precursor storage tank (not shown) that supplies the reaction precursor to the precursor supply unit 132 and then recycled to be supplied to the substrate 101 through the precursor supply unit 132 again.

The purge gas supply unit 135 is disposed to face the substrate 101 so as to inject the purge gas toward the substrate 101 and is spaced apart from and surrounded by the precursor supply unit 132 and the precursor discharge unit 133. Provide a passage through which gas is supplied. As the purge gas, an inert gas such as oxygen, nitrogen, and argon may be used.

The purge gas supply unit 135 according to the present exemplary embodiment forms an inner region for discharging the purge gas while surrounding the precursor supply unit 132 and the precursor discharge unit 133 to form the precursor supply unit 132 and the precursor discharge unit 133. By blocking the from the outside area, it is possible to block the inflow of foreign matter to the inside area. At this time, the purge gas injected from the purge gas supply unit 135 functions as an air curtain to isolate the region of the gas discharged by the flow of air, thereby isolating the region where the reaction precursor is released from the outside to the substrate 101. It is possible to form a deposition region in which deposition on the substrate occurs.

 In addition, when the purge gas is injected onto the substrate 101, the raw material precursor, which is first provided on the substrate 101 and adsorbed on the substrate 101, remains, and the raw material precursor that is separated from the substrate 101 or weak in adsorption force is a scanning block. Since the purge gas is removed from the deposition region by the scanning of 131, the purge gas may serve as an air shower for the raw material precursor. That is, when the raw material precursor is adsorbed onto the substrate 101 and one layer of the raw material precursor is laminated on the substrate 101, it is assumed that the scanning block 131 emits the reaction precursor while moving on the substrate 101. The upper precursor layer on the one layer of precursor precursor has a weak adsorption force on the substrate 101 to be separated from the substrate 101 by the injection pressure of the purge gas, and is connected to a vacuum exhaust system (not shown) to provide a vacuum pressure. It may be sucked into the provided precursor outlet 133 and be recirculated.

In addition, the precursor scanning unit 130 is installed in the atomic layer deposition chamber unit 100 is connected to the scanning block 131, and supplies the other of the raw material precursor and the reaction precursor, and the purge gas to the scanning block 131 The scan material supply unit 150 may further include.

The scan material supply unit 150 is coupled to a region of the scanning block 131 and includes a box joint 151 having a plurality of joints 152 and 153 that are folded when the scanning block 131 moves. The box arranging unit 151 may be provided in the layer deposition chamber unit 100 and may include a conveying support 155 to be relatively rotatably coupled.

According to the present embodiment, the scan material supply unit 150 may have a predetermined position and structure of the transport support 155 and the box joint 151 as a horizontal articulated robot, but the scope of the present invention is Although not limited, each line required for atomic layer deposition of the substrate 101, such as a purge gas, a precursor precursor, and a reaction precursor, is stably embedded to allow a reciprocating movement for scanning deposition of the scanning block 131. It would be possible with a structure.

The scanning block 131 may be coupled to the scanning driving unit 170 and moved while maintaining a constant gap on the substrate 101. The scanning material supply unit 150 moves when the scanning block 131 is moved. Provides a structure that is flexibly folded by a plurality of joints (152, 153) to prevent clogging due to folding of the embedded precursor supply line (not shown) and purge gas supply line (not shown) while the other of the precursor precursor and the reaction precursor One and purge gas can be supplied to flow smoothly.

According to the present exemplary embodiment, the box joint 151 may include a first joint 152 relatively rotatably coupled to the scanning block 131, and a second joint 153 rotatably coupled to the first joint 152. ), The second joint 153 and the conveying support 155 is coupled to be relatively rotatable, but the scope of the present invention is not limited thereto, the box joint 151 is the first joint 152 ) And the second joint 153 may be configured to have a structure such as a bellows or a cable suit that can be folded and stretched together.

Also, although not shown, a plurality of joints 152 and 153 of the box joint 151 and a connection portion between the box joint 151 and the transport support 155 may be formed of a magnetic fluid seal, an O-ring, and a lip seal. A rotation seal (not shown) using a) may be provided, and the rotation seal may provide a structure in which a vacuum is maintained to the outside even when the box joint 151 rotates.

A plurality of scanning blocks 131 according to the present exemplary embodiment may be disposed along the substrate 101, and the plurality of box joints 151 may be adjacent to each other along the susceptor 103 along the atomic layer deposition chamber unit. It may be connected to each of the transport support 155 disposed alternately on one side and the other side of the (100). That is, not only the scanning blocks 131 according to the present exemplary embodiment may be disposed singly, but also two or more scanning blocks may be disposed along the longitudinal direction of the substrate 101.

For example, when the plurality of scan material supply units 150 are arranged in a row on one side of a plurality of adjacent scanning blocks 131, the arrangement is difficult due to the limited deposition space of the atomic layer deposition chamber unit 100, Interference may occur when the scanning block 131 moves. However, according to the present embodiment, since the transport support 155 is alternately disposed on one side and the other side of the scanning block 131, and the box joint 151 corresponding thereto is also alternately disposed on one side and the other side, adjacent box joints are provided. The separation distance between the bases 151 can be secured enough to prevent interference.

In the precursor scanning unit 130 according to the present exemplary embodiment, the scanning block 131 may be moved in a scanning manner by the scanning driving unit 170.

First, referring to FIG. 4, the scanning driving unit 170 according to the present embodiment is installed in the atomic layer deposition chamber unit 100 and linearly coupled to the scanning block 131 to move the scanning block 131. It may include a motor 171.

The scanning block 131 is coupled on the moving block 172 belonging to the linear motor 171 disposed opposite to both sides of the atomic layer deposition chamber unit 100, and the moving block 172 is disposed on the fixed block 173. By reciprocating by the electromagnetic force in a non-contact state, it can be repeatedly reciprocated between one end and the other end of the substrate 101. As the operation of the linear motor 171 is controlled, the stack thickness of the deposition material on the substrate 101 may be controlled by controlling the number of reciprocating cycles of the scanning block 131.

In the scanning driving unit 170 according to the present exemplary embodiment, since the linear motor 171 hardly generates fine foreign matters due to friction, foreign matters may be prevented from adhering to the substrate 101 during the atomic layer deposition process. have.

In addition, referring to FIG. 5, the scanning driving unit 170 according to another embodiment may include a reciprocating roller unit 175 installed to be spaced apart from each other with the susceptor 103 interposed therebetween in the atomic layer deposition chamber unit 100. A reciprocating moving part 176 installed to be movable relative to the reciprocating roller part 175 and coupled to the scanning block 131, and a cover part coupled to the reciprocating moving part 176 and surrounding the reciprocating roller part 175 ( 177).

Although not shown, the scanning driving unit 170 may include a lead screw and a driving motor for linear movement of the reciprocating moving part 176, but the scope of the present invention is not limited thereto, and the generation of fine foreign matters. Other drive means can be provided which are virtually free and can provide linear movement.

In the scanning driving unit 170, the scanning block 131 may be coupled to the reciprocating moving part 176 and moved along the reciprocating roller part 175, from the reciprocating moving part 176 to the reciprocating roller part 175. Outflow of foreign matters generated from the reciprocating roller part 175 is blocked by the cover part 177 installed up to the upper portion of the cover 177 to prevent adhesion of foreign matters to the substrate 101 during the atomic layer deposition process of the substrate 101. As a result, the final defect of the substrate 101 due to the foreign matter can be prevented in advance.

6 is a cross-sectional view of an atomic layer deposition apparatus according to another embodiment of the present invention.

This embodiment is different from the configuration of the reaction promoting unit for changing any one of the raw material precursor and the reaction precursor to the radical state when compared with the above-described embodiment, and in other configurations are the same as the configuration of the embodiment Hereinafter, only the configuration with differences in the present embodiment will be described in detail.

Referring to FIG. 6, the reaction promotion unit 120 as described above is installed outside of the atomic layer deposition chamber unit 100 so as to be connected to the diffuser unit 111, and is provided in any one of a raw material precursor and a reaction precursor. It may include a plasma generating unit 125 for generating a plasma.

According to the present embodiment, the raw material precursor may be supplied by the diffuser unit 111, and the reaction precursor may be supplied by the precursor scanning unit 130.

The diffuser unit 111 is disposed above the atomic layer deposition chamber unit 100, and is a diffuser block 126 provided with pores 129 and an insulator disposed around the diffuser block 126. It may include an insulator gap block 127 that couples block 126 to the top wall of the atomic layer deposition chamber.

The raw material precursor is changed into a radical state by the plasma in the plasma generating unit 125 and then flows to the diffuser unit 111 through the precursor supply pipe 112, and the pores 129 of the diffuser block 126 of the diffuser unit 111. May be provided on the substrate 101. Thereafter, the reaction precursor is released on the substrate 101 by the movement of the precursor scanning unit 130 and chemically reacts with the raw material precursor in a radical state to generate and deposit a deposition material on the substrate 101.

Plasma that enhances the reaction between the raw material precursor and the reaction precursor by the reaction promotion unit 120 according to the present embodiment as described above is generated by applying an electrical method such as direct current, ultra-high frequency, electron beam by electricity, and then, using a magnetic field, etc. It may be provided in a manner to maintain.

In addition, as the reaction promoting unit 120, a heat source installed to provide heat to the substrate 101, such as a heater (not shown) installed on the inner wall of the susceptor 103 or the atomic layer deposition chamber unit 100 Reactivity may be enhanced by changing any one of the raw material precursor and the reaction precursor into a radical state.

7 is a cross-sectional view of an atomic layer deposition apparatus according to another embodiment of the present invention.

This embodiment is different from the configuration of the reaction promoting unit for changing any one of the raw material precursor and the reaction precursor to the radical state when compared with the above-described embodiment, and in other configurations are the same as the configuration of the embodiment Hereinafter, only the configuration with differences in the present embodiment will be described in detail.

Referring to FIG. 7, the reaction promotion unit 120 according to the present exemplary embodiment may be a heat source 128 provided in the susceptor 103 to increase the reactivity of the raw material precursor adsorbed onto the substrate 101.

According to the present exemplary embodiment, in a state in which a raw material precursor is supplied to the atomic layer deposition chamber unit 100 through the precursor supply pipe 112 and adsorbed onto the substrate 101, the reaction precursor is transferred through the precursor scanning unit 130. Since it is released on 101, the precursor that is changed to the radical state by the heat source 128 of the susceptor 103 is a raw material precursor.

In this case, the heat source 128 may not only be embedded in the susceptor 103, but may be supplied with any one of a raw material precursor and a reaction precursor, such as an electrode provided in the diffuser unit 111 and the plasma generator 125. Since it may be installed in the path, the scope of the present invention is not limited to the heat source 128 of the susceptor 103.

Hereinafter, an atomic layer deposition method by an atomic layer deposition apparatus according to an embodiment of the present invention will be described.

The atomic layer deposition method by the atomic layer deposition apparatus according to an embodiment of the present invention, the substrate 101 is carried into the atomic layer deposition chamber unit 100 is supported on the susceptor 103, One of the source precursor and the reaction precursor is supplied to the inside of the atomic layer deposition chamber unit 100 by the precursor supply unit 110, and the reactivity of any one of the source precursor and the reaction precursor reacts with the reaction promotion unit 120. Step by which the atomic layer deposition is performed in a scanning manner by moving the precursor scanning unit 130, which supplies the other one of the raw material precursor and the reactive precursor to the substrate 101 by a predetermined region, relative to the substrate 101. It includes.

At this time, the step of increasing the reactivity of any one of the source precursor and the reaction precursor may include generating a plasma in any one of the source precursor and the reaction precursor.

Generating the plasma in any one of the raw material precursor and the reaction precursor, the electrode is provided in the diffuser unit 111 for supplying any one of the raw material precursor and the reaction precursor inside the atomic layer deposition chamber unit 100 It may include the step of generating a plasma by (not shown). According to the present exemplary embodiment, the raw material precursor may be changed into a radical state by an electrode (not shown) provided in the diffuser unit 111 and may be adsorbed onto the substrate.

In addition, when the plasma is not generated from the diffuser unit 111, the step of generating the plasma in any one of the raw material precursor and the reaction precursor, the raw material precursor and the reaction precursor in the outside of the atomic layer deposition chamber unit 100 It may include the step of generating a plasma by the plasma generating unit 125 disposed in any one supply path. According to the present exemplary embodiment, the precursor precursor may be changed into a radical state by the plasma generator 125 and may be adsorbed onto the substrate.

On the other hand, the step of increasing the reactivity of any one of the precursor precursor and the reaction precursor, when one of the precursor precursor and the reaction precursor is supplied to the inside of the atomic layer deposition chamber unit 100 is adsorbed on the substrate 101, Either one of the precursor and the reactant precursor may comprise heating by the heat source 128 of the susceptor 103. According to the present embodiment, the raw material precursor adsorbed on the substrate 101 may be changed into a radical state by the heat source 128 of the susceptor 103.

As described above, the atomic layer deposition method by the atomic layer deposition apparatus according to an embodiment of the present invention, the scanning block of the precursor scanning unit 130 with respect to the raw material precursor adsorbed in the radical state on the substrate 101 ( Since the reaction precursor is repeatedly provided by a scanning method from 131, a deposition material may be generated to a predetermined thickness to complete atomic layer deposition on the substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

100: atomic layer deposition chamber unit 101: substrate
103: susceptor 104: opening
105: supply port 106: exhaust port
110: precursor scanning unit 111: diffuser unit
112: precursor supply pipe 113: upper electrode block
114: lower electrode block 115, 129: porous
116 and 127: insulator gap block 120: reaction promoting unit
121: power supply unit 125: plasma generating unit
126: diffuser block 128: heat source
130: precursor scanning unit 131: scanning block
132: precursor supply 133: precursor outlet
135: purge gas supply unit 150: scan material supply unit
151: box joints 152: first joints
153: 2nd joint 155:
170: scanning drive unit 171: linear motor
172: moving block 173: fixed block
175: reciprocating roller portion 176: reciprocating portion
177: cover part

Claims (18)

An atomic layer deposition chamber unit supplied with a raw material precursor and a reaction precursor and performing atomic layer deposition on a substrate supported on the susceptor;
A precursor supply unit provided to supply one of the raw material precursor and the reaction precursor into the atomic layer deposition chamber unit;
A reaction promoting unit for increasing the reactivity of any one of the raw material precursor and the reaction precursor supplied by the precursor supply unit;
A precursor scanning unit installed in the atomic layer deposition chamber unit so as to be movable relative to the substrate to emit another one of the source precursor and the reaction precursor onto the substrate; And
A scanning driving unit installed inside the atomic layer deposition chamber unit to move the precursor scanning unit,
The precursor supply unit includes a diffuser unit installed to supply any one of the raw material precursor and the reaction precursor to the atomic layer deposition chamber unit,
The reaction promotion unit, the atomic layer deposition apparatus, characterized in that provided in the diffuser. delete The method of claim 1,
Wherein the diffuser section comprises:
An upper electrode block connected to a precursor supply pipe supplying any one of the source precursor and the reaction precursor;
A lower electrode block provided with pores so as to evenly flow out one of the source precursor and the reaction precursor onto the substrate; And
And a power supply connected to any one of the upper electrode block and the lower electrode block. The method of claim 3,
The diffuser unit, the atomic layer deposition apparatus further comprises an insulator gap block for insulating and coupling the upper electrode block and the lower electrode block. The method of claim 1,
The reaction promotion unit, the atomic layer deposition apparatus characterized in that it comprises a plasma generating unit which is provided outside the atomic layer deposition chamber unit to generate a plasma in any one of the raw material precursor and the reaction precursor. 6. The method of claim 5,
The precursor supply unit includes a diffuser unit installed to supply any one of the raw material precursor and the reaction precursor to the atomic layer deposition chamber unit,
Wherein the diffuser section comprises:
A diffuser block disposed on the atomic layer deposition chamber and provided with pores; And
An insulator, comprising: an insulator gap block for coupling the diffuser block to an upper wall of the atomic layer deposition chamber. The method of claim 1,
And the reaction promoting unit is a heat source provided in the susceptor to increase the reactivity of any one of the source precursor and the reaction precursor adsorbed on the substrate. The method of claim 1,
The precursor scanning unit,
A scanning block spaced apart from the substrate and moved by the scanning driving unit;
A precursor supply unit disposed in the scanning block to supply the other of the source precursor and the reaction precursor to the substrate;
A precursor discharge part spaced apart from the precursor supply part and disposed in the scanning block to discharge another one of the reaction precursor and the raw material precursor supplied from the precursor supply part; And
And a purge gas supply unit disposed in the scanning block to surround the precursor supply unit and the precursor discharge unit to supply a purge gas. 9. The method of claim 8,
The precursor scanning unit,
An atom further installed in the atomic layer deposition chamber unit and connected to the scanning block, the scan material supply unit supplying the other one of the raw material precursor and the reaction precursor and the purge gas to the scanning block; Layer deposition apparatus. 10. The method of claim 9,
The scan material supply unit includes:
A box arthropod coupled to one region of the scanning block and having a plurality of joints folded when the scanning block moves; And
Wherein the atomic layer deposition unit includes a transfer support which is provided in the atomic layer deposition chamber unit and in which the box joint is relatively rotatably coupled. 11. The method of claim 10,
The plurality of scanning blocks, the plurality of the box joints are adjacent to each other are connected to the carrier support arranged alternately on one side and the other side of the atomic layer deposition chamber unit along the susceptor, respectively. Layer deposition apparatus. 9. The method of claim 8,
And the scanning driving unit includes a linear motor coupled to the atomic layer deposition chamber unit and the scanning block to move the scanning block. 9. The method of claim 8,
The scanning drive unit,
A reciprocating roller unit spaced apart from the atomic layer deposition chamber unit with the susceptor interposed therebetween;
A reciprocating moving part installed in the reciprocating roller unit so as to be movable relative to the scanning block; And
And a cover part coupled to the reciprocating part and surrounding the reciprocating roller part. Loading the substrate into the atomic layer deposition chamber unit and supporting the substrate on the susceptor;
Supplying any one of a source precursor and a reaction precursor into the atomic layer deposition chamber unit by a precursor supply unit;
Raising the reactivity of any one of the raw material precursor and the reaction precursor by a reaction promoting unit; And
Comprising a precursor scanning unit for supplying the other one of the raw material precursor and the reaction precursor to the substrate by a predetermined region to perform atomic layer deposition in a scanning manner by moving relative to the substrate,
Increasing the reactivity of any one of the source precursor and the reaction precursor, generating a plasma in the supply path of any one of the source precursor and the reaction precursor,
Generating a plasma in any one of the source precursor and the reaction precursor, the plasma is generated in the diffuser portion for supplying any one of the source precursor and the reaction precursor in the atomic layer deposition chamber unit Generating the plasma by the atomic layer deposition method. delete delete 15. The method of claim 14,
Generating the plasma in any one of the source precursor and the reaction precursor, the plasma generation unit is disposed in the supply path of any one of the source precursor and the reaction precursor outside the atomic layer deposition chamber unit Generating the plasma by the atomic layer deposition method. 15. The method of claim 14,
Increasing the reactivity of any one of the source precursor and the reaction precursor, when the one of the source precursor and the reaction precursor is supplied to the inside of the atomic layer deposition chamber unit is adsorbed on the substrate, and And heating one of the reaction precursors by a heat source of the susceptor on which the substrate is supported.

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