KR101518398B1 - Substrate process apparatus - Google Patents

Abstract

The present invention relates to a substrate process apparatus. It includes a chamber which supplies and extracts a substrate on a side and has a first space, an internal chamber which is arranged in the first space of the chamber and has a second space, a substrate support unit which is arranged in the internal chamber and supports the substrate, and a gas sprayer which sprays a gas to the substrate support unit. The internal chamber includes a first body fixed to an upper side in the chamber, a second body which is arranged in the lower side of the chamber to move vertically and has an exhaust hole formed in the center part of a bottom surface, and an exhaust body which is connected to the exhaust hole and has a gas exhaust path.

Description

[0001] DESCRIPTION [0002] Substrate processing apparatus [

The present invention relates to a substrate supporting apparatus, and more particularly, to a substrate processing apparatus capable of uniformly and symmetrically adjusting the environment or process parameters of a substrate processing space.

Various electronic devices such as semiconductor memories are manufactured by stacking various thin films. That is, various thin films are formed on a substrate, and the thin film thus formed is patterned using a photo-etching process to form a device structure.

The thin film is a conductive film, a dielectric film, an insulating film, etc. depending on the material, and the method of manufacturing the thin film is also very various. Methods for producing thin films include physical methods and chemical methods. Recently, a method of applying heat to a substrate or a method of utilizing plasma during a manufacturing process has been used for manufacturing an efficient thin film. When a thin film is produced on a substrate by using plasma, it is possible to lower the manufacturing temperature of the thin film and increase the thin film deposition rate.

A general thin-film manufacturing apparatus includes a chamber forming an internal space into which a substrate is introduced and a process is performed, a substrate support placed in the chamber and heated and supported, and a gas injection portion supplying a process gas to the substrate support. Further, the chamber may be connected to an exhaust pipe and an exhaust pump to form a vacuum atmosphere in the inner space of the chamber. The substrate is loaded on top of the substrate support, and the process gas injected from the gas injection portion adsorbs and reacts on the substrate to produce various thin films. Wherein the substrate support is heated and a plasma is formed in the chamber to facilitate thin film deposition.

However, such a thin film manufacturing apparatus has a problem that it is difficult to control process parameters such as gas flow, temperature distribution, plasma state, etc. in a desired state in a chamber in which the process proceeds.

For example, in the thin film production apparatus, an exhaust pipe is connected to a lower portion of one side of the chamber to regulate the pressure of the inner space and to exhaust the gas to be injected, and a gas supplied from the gas injection portion of the upper region of the chamber to the substrate The gas flows in the direction toward the exhaust pipe, so that the gas flow is not uniformly maintained at the upper portion of the substrate. Further, a substrate inlet port through which the substrate is carried in or out is formed in a part of the side wall of the chamber, resulting in asymmetry in the structure of the chamber interior space, and asymmetry in gas flow, temperature distribution and the like.

If unevenness or asymmetry is caused in the chamber environment or various process parameters, it is difficult to uniformly produce the thickness and the film quality of the thin film on the substrate. In addition, the non-uniformity of such a thin film deteriorates the characteristics of various devices to be manufactured.

The present invention provides a substrate processing apparatus capable of uniformly controlling a process environment or various process parameters in a substrate processing space. The present invention provides a substrate processing apparatus capable of symmetrically distributing various process parameters in a substrate processing space.

The present invention provides a substrate processing apparatus capable of uniformly manufacturing a thin film on a substrate.

A substrate processing apparatus according to an embodiment of the present invention is a substrate processing apparatus including a chamber which is capable of inputting and outputting a substrate from one side and forming a first space therein, a second chamber disposed in the first space inside the chamber, A chamber, a substrate support disposed within the interior chamber for supporting the substrate, and a gas injector disposed above the substrate support and for injecting gas into the substrate support, wherein the inner chamber is located above the chamber A second body disposed below the first body and movable up and down, an exhaust hole formed in the center of the bottom, and an exhaust body connected to the exhaust hole and forming a gas exhaust path therein . At this time, the first body and the second body may be coupled to each other to form an isolation space for isolating the second space from the first space.

An exhaust port is connected to the center of the bottom surface of the chamber, and the exhaust body may be located inside the exhaust port. The exhaust body may include a first hole formed in the upper side wall and communicating the first space and the gas exhaust path, and a second hole formed in the lower side wall and communicating the gas exhaust path and the exhaust port.

The exhaust body may have a hollow tube structure extending vertically and may include an upper region connected to the exhaust hole and a lower region having a smaller diameter than the upper region, A third hole may be formed. The exhaust port may be connected to an external exhaust part at one side.

The gas injector includes an injection plate facing the substrate support and formed with a plurality of injection holes, an upper plate formed on the upper side of the injection plate and connected to the gas supply pipe, and a gas passage formed between the injection plate and the upper plate. And a distribution plate on which a plurality of distribution holes are formed.

Wherein the distribution plate includes an inner region including a center and an outer region where the distribution holes are not formed, an intermediate region formed outside the inner region and formed with the distribution holes, an outer region formed outside the middle region, As shown in FIG. The distribution plate may include an inner region including a center and an outer region where the distribution holes are not formed, an intermediate region formed outside the inner region, the distribution holes being formed at different intervals depending on positions, And an outer region formed and formed with a plurality of distribution holes.

The area of the outer region may be greater than the sum of the areas of the inner region and the middle region. The intermediate region may include a first intermediate region contacting the inner region and forming a plurality of distribution holes, and a second intermediate region contacting the outer region and forming distribution holes at a distance closer to the first intermediate region. At this time, the density of distribution holes, which is the number of distribution holes per unit area in the second intermediate region, may be higher than that of the first intermediate region, and the density of the distribution holes may be lower than that of the second intermediate region.

The distribution hole may be disposed radially in the outer region, and the diameter of the gas supply pipe may be larger than the diameter of the inner region and smaller than or equal to the outer diameter of the first middle region.

According to the embodiment of the present invention, since the isolated process space in which the substrate is processed in the chamber is formed into a symmetrical structure, the environment of the process space is formed symmetrically and various process parameters such as gas flow and temperature are symmetrically It can be uniformly distributed.

Further, a separate isolation space inside the chamber reduces the volume of the substrate processing space, thereby increasing the film deposition rate and reducing gas consumption. Further, the volume of the process space is reduced, so that the chamber cleaning can be performed quickly and easily.

Further, since the exhaust gas is exhausted from the exhaust hole formed in the lower central portion of the process space, the gas entering the chamber through the gas injector can be discharged to the outside of the chamber through the exhaust hole through the shortest path. Thus, due to the reaction byproduct, the formation of an undesired film on the member positioned on the gas movement path can be suppressed.

Further, according to the embodiment of the present invention, since the gas is uniformly distributed in the gas injector and injected into the substrate, the gas can be more uniformly supplied and distributed in the process space.

As described above, it is possible to uniformly and symmetrically control the process parameters such as the gas flow, to uniformly manufacture the thickness of the thin film formed on the substrate over almost the whole area of the substrate, Similar control is possible. From this, the quality of the thin film formed on the substrate can be improved.

Further, the process space can be reduced, a thin film can be manufactured with a small gas amount, and the productivity can be improved at a low cost by reducing the amount of gas used.

1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention;
2 is a cross-sectional perspective view schematically illustrating the inside of a substrate supporting apparatus according to an embodiment of the present invention.
3 is a cross-sectional view schematically showing the configuration of a gas injector according to an embodiment of the present invention
Figure 4 is a schematic plan view showing the distribution plate in the gas injector of Figure 3;
5 is a conceptual diagram showing a process of loading a substrate in the substrate processing apparatus of the embodiment of the present invention
6 is a conceptual diagram showing a process of processing a substrate in the substrate processing apparatus of the embodiment of the present invention

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. In the drawings, the thickness or size is exaggerated or enlarged to clearly illustrate each component, and the same reference numerals denote the same elements in the drawings.

FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional perspective view schematically showing the inside of a substrate supporting apparatus according to an embodiment of the present invention.

1 and 2, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 in which a substrate S is allowed to enter and exit from one side and a first space 130 is formed therein, a chamber 100, An inner chamber 200 disposed in the first inner space 130 and defining a second space 240 therein, a substrate support disposed within the inner chamber 200 for supporting the substrate S 510), and a gas injector (300) disposed above the substrate support (510) and for injecting gas to the substrate support (510). The inner chamber 200 includes a first body 220 fixed on the upper side of the chamber 100 and a second body 210 disposed on the lower side of the first body 220 and movable up and down. The first body 220 and the second body 210 are coupled to each other to form an isolated space that isolates the second space from the first space.

The substrate processing apparatus also includes a rotation shaft 520 for supporting and moving the substrate support 510 and a vacuum forming unit 700 for forming a vacuum atmosphere in the chamber 100. In addition, the gas injector 300 may be connected to the power supply 600 to serve as an upper electrode. That is, when the power is applied, the upper electrode may function as a plasma to form a plasma between the substrate support 510 and the substrate support 510.

Such a substrate processing apparatus loads a substrate S into a chamber 100 and then loads the wafer to manufacture semiconductor devices in the chamber 100, for example, as an apparatus for performing various processes on the substrate S, The process gas is supplied to the gas injector 300 to form a thin film on the wafer.

The chamber 100 includes a main body 110 having an opened top and a top lead 120 provided on the top of the main body 110 to be openable and closable. When the top lead 120 is coupled to the upper portion of the main body 110 to close the main body 110, a space for processing the substrate W such as a deposition process is formed inside the chamber 100. Since the space is generally formed in a vacuum atmosphere, the exhaust part is connected to the chamber 100. For example, an exhaust pipe 720 for exhausting gas existing in the space is connected to a predetermined position of the chamber 100, for example, the bottom surface or side surface of the chamber 100, and the exhaust pipe 720 is connected to a vacuum pump 710 .

The bottom surface of the main body 110 is formed with a through hole through which the rotation shaft 520 of the substrate support 510 and an exhaust body 230 of the inner chamber 200 can pass. Here, the through hole can also serve as an exhaust port 140 for exhausting the gas in the chamber 100 into the chamber 100, that is, a hole formed to penetrate the center of the bottom surface of the chamber body 110. Further, the exhaust port 140 forms an exhaust space extending downward from the bottom surface of the main body 110, and the exhaust space can be connected to the exhaust part from one side. For example, the exhaust pipe 140 may be connected to an exhaust pipe 720 through a connection pipe 150 at a lower side of the exhaust port 140. An opening 111 for carrying the substrate S into or out of the chamber 100 is formed on the side wall of the main body 110 and a gate valve 900 may be mounted outside the opening 111 have.

Although the chamber 100 including the main body 110 and the top lead 120 has been described above, the structure of the chamber is not limited thereto and may be variously changed. For example, the main body 110 and the top lead 120 may be integrally manufactured. Although the exhaust structure in which the exhaust port 140, the connection pipe 150, and the exhaust pipe 720 are connected to each other has been described above, various modifications can be made as long as the exhaust structure is exhausted through the center of the lower portion of the chamber.

The inner chamber 200 is installed inside the chamber 100 as a separate member from the chamber 100 to form an isolated space in which the substrate S is substantially processed. That is, the isolation space is formed as a separate second space 240 that is isolated from the first space 130 in the first space 130 formed by the chamber 100 with respect to the outside, and a thin film deposition And the like are performed. The inner chamber 200 includes a first body 220 as a fixed body fixed on the upper side of the chamber 100, a second body 210 as a movable body which is disposed below the first body 220 and is movable up and down The first body 220 and the second body 210 are combined to form a second space 240.

Here, the first body 220 may be fixed on the upper side of the main body 110, and may be formed to surround the inner side of the upper side of the main body 110. For example, the first body 220 can be manufactured in the form of an annular ring. The second body 210 may be coupled to the first body 220 by contacting the lower surface of the first body 220 with the upper surface moving up and down. At this time, a coupling part may be formed on the upper surface of the second body 210. The second body 210 includes a bottom surface 211 spaced apart from the bottom surface of the substrate support 510 and a bottom surface 211 extending upward from the edge of the bottom surface 211, And a side wall 212 spaced apart from the side surface at regular intervals. That is, the second body 210 may have a point-symmetrical configuration with respect to the center of the substrate S or the substrate support 510. The side wall 212 of the second body 210 may be thicker toward the upper side and the upper side 213 may have a coupling portion 214 coupled to the lower side of the first body 220. For example, the upper surface 213 of the second body may have a projection protruding upward. In this case, the lower surface of the first body 220 may have a concave groove, into which the projection may be inserted, . Of course, on the contrary, a concave groove may be formed on the upper surface 213 of the second body 210, and a protrusion projecting downwardly may be formed on the lower surface of the first body 220. This coupling part improves the adhesion between the first body 220 and the second body 210 and facilitates the coupling of both members. At least one or both of the first body 220 and the second body 210 may be made of a ceramic material. Such a ceramic material is excellent in thermal insulation, thermal stability and corrosion resistance, so that various processes can be performed in a second space formed by the inner chamber 200.

The symmetry of the first space 130 in the vicinity of the opening 111 is not maintained because the opening portion 111 through which the substrate S is carried in and out is formed on one side of the chamber 100 as described above. On the other hand, by the structure of the inner chamber 200, the second space 240 is formed in a symmetrical structure with respect to the center of the substrate or the support. Further, since the second space 240 is an inner space of the dual chamber structure, the substrate support 510 and the periphery thereof can be kept uniform and hot when the substrate support 510 is heated. In the case where the substrate processing is performed in the second space which is blocked and symmetrical with the first space and is excellent in thermal insulation, the uniform processing can be performed. For example, a thin film having a uniform thickness can be formed on a substrate. Also, the second space may have a volume less than the first space. The second space 240 has a small volume so that the processing gas flowing into the second space can quickly reach the substrate S, thereby improving the deposition rate of the thin film deposited on the substrate, The process can be performed with an amount of the process gas. Even if the by-product is formed on the inner wall of the inner chamber 200 by the thin film deposition process, the inner chamber 200 is maintained at a relatively higher temperature than the chamber 100 and the by-products are stably formed, It can be cleaned easily and quickly, and productivity can be increased.

An exhaust hole 219 is formed at the center of the bottom surface 211 of the second body and the exhaust hole 219 may be connected to an exhaust body 230 forming an exhaust path through which gas flows. The exhaust body 230 may have a hollow tube structure extending in the vertical direction and may include an upper region 213 connected to the exhaust hole 219 and a lower region 232 having a smaller diameter than the upper region 231 . At this time, a path passing through the exhaust body 230 up and down, that is, an internal path of the hollow tube becomes an exhaust path through which gas is exhausted. The exhaust body 230 includes a plurality of first holes 233 formed in the upper sidewall, that is, a sidewall of the upper region 231 and communicating the first space 130 with the exhaust path, a lower sidewall, And a plurality of third holes 235 formed in the bottom surface of the upper region and passing through the upper and lower portions. At this time, the first hole 233 and the third hole 235 may be connected or separately formed. The gas introduced from the gas injector 300 is utilized in the substrate processing process in the second space 240 and discharged from the second space 240 to the outside through the exhaust body 230 described above. The gas passes through the space between the substrate support 510 and the sidewall of the inner chamber 200 and passes through the space between the substrate support 510 and the bottom surface of the inner chamber 200 and through the exhaust holes 219 and Passes through the exhaust body 230, and is discharged to the exhaust port 140 and the external exhaust pipe. At this time, the gas passing through the exhaust body 230 may pass through the exhaust path extending vertically and flow through the second hole 234 to the exhaust port 140, and the third hole of the exhaust body 230 The exhaust gas may pass through the exhaust port 233 and flow to the exhaust port 140. The gas existing in the chamber 100 or the first space 130 flows into the exhaust port 140 through the first hole 233 passing through the exhaust body 230, And may flow to the exhaust port 140 through the first hole 233 and the third hole.

In the above, the central portion of each member includes the center of each member, and includes a predetermined region extending outwardly. At this time, the area of the predetermined region may vary according to the size of the member and is not particularly limited, and it is sufficient if the gas discharge flow can be guided to the center direction. The exhaust body 230 may be formed integrally with the second body 210, or may be formed as a separate member and coupled to the second body 210. The exhaust body 230 is connected to a driving shaft (not shown) and a driving means (not shown) outside the chamber 100 and can move up and down by the operation of the driving body 230. The second body 210 is moved up and down . The exhaust port 140 may be integrally formed on the lower side of the chamber 100 or may be mounted on the lower surface of the chamber 100 by a separate member.

Since the exhaust structure is formed in the lower central portion of the chamber 100 and the inner chamber 200 as described above, the gas can be exhausted through the lower central portion, The exhaust path from the position to the exhaust structure can be maintained symmetrically and uniformly. From this, it becomes possible to suppress or prevent the non-uniformity of the gas flow or the unevenness of the substrate processing process caused by the bias of the exhaust gas.

The substrate support 510 is installed below the interior of the inner chamber 200 as a configuration for supporting the substrate S. [ The substrate support 510 is mounted on the rotation shaft 520. The substrate support 510 has a plate shape having a predetermined thickness and has a shape similar to that of the substrate S. For example, if the substrate is a circular wafer, it can be formed into a disk shape. Of course, the present invention is not limited thereto and various shapes can be changed. The substrate support 510 is horizontally disposed inside the inner chamber 200 and the rotation axis 520 is vertically connected to the bottom surface of the substrate support 510. The rotation shaft 520 is connected to driving means (not shown) such as an external motor through the through hole on the bottom surface of the chamber 100 to move the substrate support 510 up, down and rotate. At this time, the space between the rotating shaft 520 and the through-hole is sealed by using a bellows (not shown) or the like, thereby preventing the vacuum in the chamber 100 from being released in the process of processing the substrate.

In addition, a heating element (not shown) for heating the heating element may be provided inside the substrate support 510. The heating element is connected to an external power source. When power is applied to the heating element, the substrate support 510 is heated, The substrate S mounted on the substrate support 510 can be heated. The heating element may be installed in various ways and structures, and is not particularly limited. In addition, the substrate support 510 may be used as a lower electrode. For example, the substrate support 510 may be grounded and power applied to the gas injector 300 to excite the plasma between the substrate support 510 and the gas injector 300.

A plurality of through holes may be formed in the substrate support 510 to penetrate the substrate S in the up and down direction. A lift pin 530 may be inserted into the through hole to be used for loading and unloading the substrate S . At this time, a through hole through which the lift pin 530 passes may be formed on the bottom surface 211 of the second body 210. The lift pins 530 may be exposed above the substrate supports 510 or the lift pins 530 may penetrate through the substrate supports 510 as the second bodies 210 and the substrate supports 510 move up and down, It can be located inside the hole.

The gas injector 300 serves to supply gas to the interior of the inner chamber 200, precisely the chamber 100. Also, the gas injector 300 may be connected to the external power source 600 to serve as an upper electrode. That is, various kinds of process gases supplied from the outside through the gas injector 300 can be injected toward the substrate supporter 510. For example, a process gas for thin film deposition can be injected. The gas injector 300 may be installed in the top lead 120 forming the chamber 100 and may be connected to a plurality of gas supply sources supplying different kinds of gas. The gas injector 300 may be manufactured as a showerhead type having a plurality of jet holes, having a predetermined area and facing the substrate support 510. Of course, the means for supplying gas to the chamber 100 may be made of a nozzle or injector type inserted into the inner chamber 200. An insulating member 800 may be provided between the gas injector 300 and the top lead 120 to electrically insulate the gas injector 300 from the top lead 120.

For example, in the case of a showerhead type gas injector, an injection plate 310 having a plurality of injection holes facing the substrate supporter 510, an upper plate formed on the injection plate 310 and connected to the gas supply unit, And a distribution plate 330 formed between the ejection plate 310 and the upper plate 320 and having a plurality of distribution holes through which the gas passes. When gas is supplied from the gas supply unit 400 connected to the external gas supply source, the gas is introduced into the space between the top plate 320 and the distribution plate 330 through the top plate 320, Passes through the distribution holes of the spray plate 310 and is injected between the distribution plate 330 and the injection plate 310 and then through the injection holes of the injection plate 310 and toward the substrate support. The gas introduced through the central portion of the top plate 320 passes through the distribution plate 330 and the injection plate 310 and is injected onto the substrate support 510 so that the gas is injected onto the substrate S supported on the substrate support 510 The gas can be uniformly supplied.

The gas injector 300 is connected to a gas supply unit 400 for supplying a gas and the gas supply unit 400 includes a gas distribution block 420 for uniformly distributing gas supplied from the outside to the gas injector 300 ). The gas supply unit 400 may include a gas supply pipe 410 connected to the central portion of the top plate 320 and a gas distribution block 420 inserted and mounted at a predetermined position of the gas supply pipe 410. The gas supply pipe 410 has a hollow tube structure and forms a main inflow passageway 430 through which gas flows into the gas supply pipe 410, and may be formed as a single member or a plurality of members. For example, one end of the one gas supply pipe may be connected to the top plate 320, the gas distribution block 420 may be disposed at the other end, and another gas supply pipe may be provided thereon. At this time, the main inflow passage 430 is formed through the central portion of each member. Of course, it is also possible to integrally form the gas distribution block 420 in a part of the single gas supply pipe.

In addition, the gas supply unit 300 can supply a plurality of various gases, for example, connecting the upper and outer pipes of the gas introduction pipe to supply the cleaning gas to the main inlet channel 430, 420 can supply the thin film deposition process gas in the lateral direction. At this time, the gas distribution block 420 serves to uniformly inject the introduced gas into the main inflow passage 430, and may be connected to a plurality of external pipes to introduce a plurality of process gases.

Hereinafter, the gas injector 300 will be described in detail with reference to the drawings. FIG. 3 is a cross-sectional view schematically showing the configuration of a gas injector according to an embodiment of the present invention, and FIG. 4 is a schematic plan view showing a distribution plate in the gas injector of FIG.

3 and 4, the gas injector 300 includes an injection plate 310 having a larger area than the substrate support 510 in the form of a plate having a predetermined thickness, And a top plate 320 spaced apart from the distribution plate 330 in the form of a plate having a predetermined thickness.

A plurality of spray holes 311 are formed in the spray plate 310 so as to allow gas to pass therethrough. The spray holes 311 may have the same diameter in a direction in which the holes extend, As shown in Fig. The plurality of injection holes 311 can be arranged so as to uniformly inject gas onto the substrate S, and the arrangement thereof is not specially calculated.

 The top plate 320 may be made of a plate having a thickness greater than the thickness of the ejection plate 310, and is connected to the gas supply pipe 420 at the center thereof. From this, gas is supplied into the gas injector through the top plate 320. In addition, the top plate 320 may have a predetermined area at the edge, that is, a step portion 321 may be formed at the edge, and a concave groove may be formed concavely inward. Further, a distribution plate 330, which will be described later, may be fastened to the step portion of the top plate 320. The concave groove forms a first supply space 340 through which the gas passes between the top plate 320 and the distribution plate 330.

The distribution plate 330 may be made of a plate having a thickness smaller than the thickness of the ejection plate 310 and spreads before the gas passing through the top plate 320 reaches the ejection plate 310. A plurality of fastening holes 333 may be formed at the edge of the distribution plate 330. The fastening means 332 such as a screw may penetrate the fastening holes 333 and the stepped portions 321 of the upper plate 320 may be formed, Respectively. So that the distribution plate 330 can be coupled to the top plate 320. Here, the manner in which the distribution plate 330 and the top plate 320 are coupled to each other and the method of forming the first supply space 340 may be variously changed. For example, the stepped portion 321 is not formed on the upper plate 320, but a stepped portion protruding upward in the edge of the distribution plate 330 may be formed and the stepped portion may be fastened to the upper plate. Since the distribution plate 330 is spaced apart from the injection plate 310, a second supply space 350 through which the gas passes is formed between the injection plate 310 and the injection plate 310.

A plurality of distribution holes 331 are formed in the distribution plate 330 so as to pass through the gas in the vertical direction. The distribution holes 331 are arranged in a proper distribution in the distribution plate 330 so that the introduced gas can be uniformly provided to the bottom. For example, the distribution plate 330 includes an inner region A including a center and no distribution hole 331, an intermediate region B formed outside the inner region A and in which distribution holes 331 are formed And an outer region D formed on the outer side of the intermediate regions B and C and spaced apart from the distribution holes 331 toward the edge. The distribution holes 331 may be formed in the intermediate regions B and C at different intervals according to their positions.

The inner region A prevents the gas that has passed through the gas introduction pipe 420 and the upper plate 320 from flowing into the lower injection plate 310 and serves to spread the introduced gas in the lateral direction . For this purpose, the inner region A is not provided with the distribution hole 331 in which the gas advances downward.

The intermediate regions B and C are regions for controlling the distribution of introduced gases and include a first intermediate region B and an outer region D which are in contact with the inner region A and in which a plurality of distribution holes 331 are formed, And a second intermediate region (C) in which distribution holes (331) are formed at intervals closer to the first intermediate region (B). That is, the density of the distribution holes 331, which is the number of the distribution holes 331 per unit area in the second intermediate region C, is higher than the first intermediate region (B). This is because the second intermediate region C is formed in the intermediate portion of the path where the gas that has reached the inner region A collides with the inner region A and the density of the gas in this region is smaller than the other region So that the density of the distribution holes 331 in the second intermediate region C is increased for uniform gas supply. In addition, since the first intermediate region B is formed in the gas supply path, that is, in the outer portion of the gas supply pipe 420 and the gas supplied from the gas supply path is not supplied only vertically, The density of the distribution holes is made smaller than that of the second intermediate region C in order to uniformly supply the gas. In the first intermediate region (B), the distribution holes (331) can be arranged in a regular or irregular distribution. Of course, the distribution of the distribution holes 331 is not particularly limited.

 The outer region D is an area mainly guiding the introduced gas downward and the area of the outer region D may be formed larger than the sum of areas of the inner region A and the middle regions B and C A plurality of distribution holes 331 are formed. For example, the distribution holes 331 are arranged in such a manner that they spread radially toward the edge. By this distribution hole distribution, the gas introduced into the outer region D can be guided downward while being spread outward. In addition, the density of the distribution holes 331 may be smaller in the outer region D than in the second intermediate region C. It is possible to prevent a large amount of the induced gas flow from colliding with the inner region A from being directed downward. In addition, when the gas injected from the gas injector 300 passes between the substrate support 510 and the inner wall of the inner chamber 200, the flow velocity becomes faster than the other region, , The density of the distribution holes 331 is reduced, so that it is possible to suppress gas flow unevenness due to such a fast flow rate.

The diameter of the gas supply pipe 420, the diameter of the inner region A, and the outer diameter of the first intermediate region B can be adjusted depending on the gas introduction conditions. For example, the diameter of the inner region A may be equal to or larger than the diameter of the gas supply pipe 420 so that the gas introduced from the gas supply pipe 420 can be prevented from completely flowing downward have. The diameter of the inner region A is formed smaller than the diameter of the gas supply pipe 420 and the outer diameter of the first intermediate region B is formed to be equal to or larger than the diameter of the gas supply pipe 420, 420 may be partially prevented from flowing directly to the lower side.

In addition, the size of each area can be adjusted. For example, when the outer diameter D of the outer region D is 100, the outer diameter C of the second intermediate region is in the range of 30 to 40, the outer diameter B of the first intermediate region is in the range of 18 to 22, The diameter of region A may range from 6 to 8. Of course, the size of each region can be changed variously according to the gas introduction condition and flow.

When the gas is injected into the gas injector 300 in which the arrangement of the distribution holes is controlled, the gas distribution in the gas injector 300 can be controlled and uniformly injected into the substrate. 3, the gas introduced from the gas supply pipe 420 is blocked by the inner region A of the distribution plate 330 so as to flow in the downward direction and spread in the lateral direction, 340. Subsequently, the gas is supplied to the second supply space 350 through the distribution hole 331 whose distribution is controlled for each region, and is uniformly spread. Thereafter, the gas passes through the injection hole 311 of the injection plate 310, As shown in FIG.

The substrate processing operation will be described below with reference to the drawings. FIG. 5 is a conceptual view illustrating a process of loading a substrate in a substrate processing apparatus of an embodiment of the present invention, and FIG. 6 is a conceptual diagram illustrating a process of processing a substrate in a substrate processing apparatus of an embodiment of the present invention.

In order to carry out the process in the substrate processing apparatus, the substrate is carried in through the opening 111 of the chamber 100. To this end, the substrate support 510 and the second body 210 are moved downward. The lift pin 530 inserted into the through hole of the substrate support 510 also moves downward. However, since the length of the lift pin 530 is longer than the thickness of the substrate support 510 and the height of the second body 210, the lift pin 530 reaches the bottom surface of the chamber 100 after the lift pin 530 is lowered to some extent And stops descending. On the other hand, the substrate support 510 and the second body 210 are continuously lowered, and the lift pin 530 protrudes from the upper surface of the substrate support 510, and the upper end is located at a height apart from the upper surface. In addition, due to the lowering of the second body 210, the coupling between the first body 220 and the second body 210 is released and there is a gap therebetween, As shown in Fig. At this time, the gate valve 900 closing the opening 111 of the chamber 100 is opened, and the substrate S is carried through the opening 111 to be placed on the upper end of the lift pin 530. That is, the substrate S is supported by the plurality of lift pins 530.

Thereafter, the gate valve 900 is closed to close the opening 111, and the substrate support 510 and the second body 210 are raised. The lift pins 530 are inserted into the substrate support 510 and the gap between the substrate S and the substrate support 510 is narrowed due to the rise of the substrate support 510 and the second body 210. [ When the substrate support 510 and the second body 210 continue to rise, the lift pins 530 are entirely inserted into the substrate support 510 and the substrate S is placed on the upper surface of the substrate support 510 do. At this time, the lift pin 530 is formed to have a larger area than the outer periphery of the lift pin 530, so that the lift pin 530 is caught without falling down through the through hole of the substrate supporter 510. On the upper surface of the substrate supporter 510, A concave groove into which an upper end portion of the concave groove is inserted can be formed. The first body 220 and the second body 210 are coupled with each other by the elevation of the second body 210 so that the second space of the inner chamber 200 is formed as an isolated space.

After the substrate S is loaded in the inner chamber 200, the chamber 100 and the inner chamber 200 are evacuated to control the desired vacuum pressure, adjust various process parameters, and control the gas distribution block 420 and the gas Introduces a desired process gas through the injector 300, and performs various processes on the substrate S. For example, a thin film can be deposited on the substrate S by introducing a thin film deposition process gas. Also, while the process is being performed, power may be applied to the gas injector 300 to excite the plasma.

As such, the inner chamber 200 is formed separately from the chamber 100, the exhaust is performed to the lower center portion, and the second space of the symmetrical structure and the uniform environment is formed by uniformly introducing the gas. Since the substrate S is processed in the second space, a uniform substrate processing process can be performed.

In the above description, the substrate processing process is performed between the facing upper electrode and the substrate support. However, the present invention can be applied to devices of various types and structures.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

100: chamber 200: inner chamber
300: Gas injector 510: Substrate support
210: second body 220: first body

Claims (15)

A chamber capable of entering and exiting a substrate from one side and forming a first space therein;
An inner chamber disposed in a first space within the chamber and defining a second space therein;
A substrate support disposed within the interior chamber for supporting the substrate;
And a gas injector disposed above the substrate support and for injecting gas to the substrate support,
The inner chamber having a first body fixed to the upper side of the chamber; A second body disposed below the first body and movable up and down, and having an exhaust hole at a center of the bottom; And an exhaust body connected to the exhaust hole and forming a gas exhaust path therein,
Wherein an exhaust port is connected to the center of the bottom surface of the chamber and the exhaust body is located inside the exhaust port.
The method according to claim 1,
Wherein the first body and the second body are coupled to each other so that the second space is isolated from the first space.
delete The method according to claim 1,
Wherein the exhaust body includes a first hole formed in an upper side wall and communicating the first space and the gas exhaust path and a second hole formed in a lower side wall and communicating the gas exhaust path and the exhaust port, .
The method according to claim 1 or 4,
Wherein the exhaust body has a hollow tube structure extending in the vertical direction and includes an upper region connected to the exhaust hole and a lower region having a diameter smaller than that of the upper region, Is formed.
The method according to claim 1 or 4,
Wherein the exhaust port is connected to an external exhaust part at one side.
A chamber capable of entering and exiting a substrate from one side and forming a first space therein;
An inner chamber disposed in a first space within the chamber and defining a second space therein;
A substrate support disposed within the interior chamber for supporting the substrate;
And a gas injector disposed above the substrate support and for injecting gas to the substrate support,
The inner chamber having a first body fixed to the upper side of the chamber; A second body disposed below the first body and movable up and down, and having an exhaust hole at a center of the bottom; And an exhaust body connected to the exhaust hole and forming a gas exhaust path therein,
The gas injector includes an injection plate facing the substrate support and formed with a plurality of injection holes, an upper plate formed on the upper side of the injection plate and connected to the gas supply pipe, and a gas passage formed between the injection plate and the upper plate. And a distribution plate on which a plurality of distribution holes are formed.
The method of claim 7,
Wherein the distribution plate includes an inner region including a center and an outer region where the distribution holes are not formed, an intermediate region formed outside the inner region and formed with the distribution holes, an outer region formed outside the middle region, And an outer region where a distance between the outer region and the outer region is increased.
The method of claim 7,
The distribution plate includes an inner region including a center and an outer region in which the distribution holes are not formed, an intermediate region formed outside the inner region, the distribution holes being formed at different intervals according to positions, And an outer region in which a plurality of distribution holes are formed.
The method according to claim 8 or 9,
Wherein the area of the outer region is larger than the sum of areas of the inner region and the middle region.
The method according to claim 8 or 9,
Wherein the intermediate region comprises a first intermediate region in contact with the inner region and forming a plurality of distribution holes and a second intermediate region in contact with the outer region and in which distribution holes are formed at intervals closer to the first intermediate region, .
The method of claim 11,
Wherein a density of distribution holes, which is the number of distribution holes per unit area in the second intermediate region, is higher than the first intermediate region.
The method of claim 12,
Wherein the density of the distribution holes is lower than that of the second intermediate region.
The method of claim 11,
And wherein the distribution holes in the outer region are disposed radially.
The method of claim 11,
Wherein the diameter of the gas supply pipe is larger than the diameter of the inner region and smaller than or equal to the outer diameter of the first intermediate region.

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