KR20150101785A - Substrate process apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. The substrate processing apparatus includes: a main body which has an opened upper part, an internal space, and an exhaust hole formed on a lower part; a top lid which is formed on the upper part of the main body and partly covers the upper part of the main body; a substrate supporter which is formed on the main body and supports the substrate; and a gas injection body which faces the substrate supporter on the top lid and injects process gas to the substrate support part. An extension part is formed on the top lid. The extension part is extended vertically and forms a space for processing the substrate. An exhaust path of the process gas is formed in the space for processing the substrate. The exhaust path is formed between the edge of the substrate supporter and the inner wall of the extension part. Therefore, the space of processing the substrate can be easily formed.

Description

[0001] DESCRIPTION [0002] Substrate processing apparatus [

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of easily forming a substrate processing space.

In general, various processes are performed in a substrate processing apparatus including a vacuum chamber for manufacturing semiconductor devices, display devices, or solar cells. For example, a process of loading a substrate in a chamber and depositing a thin film on the substrate or etching the thin film is performed. At this time, the substrate is supported on a substrate support provided in the chamber, and the process gas is injected onto the substrate through the gas ejector provided on the substrate support.

Such a substrate processing apparatus includes a chamber in which a substrate processing space is formed, a gas ejecting body for ejecting a processing gas into the chamber, and a substrate supporter which is installed to face the gas ejecting body and supports the substrate thereon. At this time, the chamber includes a main body having an open upper portion and a top lead covering an upper portion of the main body, and the substrate processing space is formed throughout the main body.

However, the space formed inside the chamber is substantially wider than the space between the top lead and the substrate support, which is a space where the substrate is processed. Accordingly, since the amount of the process gas supplied into the chamber for substrate processing must be supplied relatively more than the amount of the process gas used to substantially process the substrate, the process gas is unnecessarily consumed and the process cost is increased. In addition, the time required for purging the inside of the chamber after the substrate processing is increased, and the whole process time is increased, thereby deteriorating the productivity.

Further, a substrate processing space is formed between the top lead and the substrate support, wherein a gate valve for loading and unloading the substrate is provided around the substrate processing space. There is a problem that it is difficult to ensure process uniformity because the substrate processing space is not formed symmetrically.

KR 2009-0118676A

The present invention provides a substrate processing apparatus capable of efficiently forming a substrate processing space.

The present invention provides a substrate processing apparatus capable of reducing the amount of process gas used and shortening the process time to improve process efficiency and productivity.

The present invention provides a substrate processing apparatus capable of improving process uniformity by symmetrically forming a substrate processing space.

A substrate processing apparatus according to an embodiment of the present invention includes a main body having an upper portion thereof opened and an inner space formed therein and an exhaust port formed at a lower portion thereof, a top lead provided at an upper portion of the main body, And a gas spraying body mounted in the main body and supporting the substrate, and a gas spraying body mounted on the top lead to face the substrate support and spraying the process gas to the substrate support, wherein the top lead is vertically And an exhausting path of the process gas is formed between an edge of the substrate support and an inner wall of the extension in a space where the substrate is processed .

The top lid is provided with two Multi-space in which the substrate is processed, the gas distribution between the member and the substrate support are provided by the number corresponding to the number of the space in which the substrate treatment, the body interior of the plurality of substrate support And a substrate moving portion for moving the substrate to the substrate processing portion.

Wherein the substrate moving part is vertically disposed inside the main body and rotates, raises and lowers the rotating shaft, horizontally connected to the upper part of the rotating shaft, and has a plurality of openings through which the plurality of substrate supporting rods are inserted, And a plurality of substrate support rings provided at positions corresponding to the openings on the turntable to support the edges of the substrate, wherein the openings are provided with protrusions inside the openings to support the substrate support rings, The support ring may be selectively supported on the substrate support and the turntable.

The top lead may be provided with a curtain gas injection unit for injecting a curtain gas.

The curtain gas jetting unit includes a curtain gas diffusion space communicating with an outside curtain gas supply source inside the top lead and a jet plate coupled to the curtain gas diffusion space below the top lead and having a plurality of jet holes formed therein can do.

The curtain gas diffusion space may include a diffusion plate in which the curtain gas diffusion space is divided into a plurality of layers and a plurality of injection holes are formed.

The top lead may be provided with an insertion port extending vertically through the top lead, and an inner edge of the insertion port may be formed with a step for supporting the gas injection device inserted through the insertion port.

An insulator may be provided between the top lead and the gas jetting body.

The inner peripheral surface of the extended portion may be formed as a single continuous surface.

At least a part of the extension portion may be cut out of the space where the substrate is processed, and the width of the exhaust path may increase as it goes downward.

A curved surface may be formed on at least a part of the extended portion.

The substrate processing apparatus according to the embodiment of the present invention can easily form a substrate processing space in the chamber. That is, an extension extending in the vertical direction can be formed in the lower portion of the top lead to efficiently form a space for processing the substrate. Therefore, the substrate processing space is unnecessarily increased, the amount of the process gas used can be reduced, and the process time can be shortened. Therefore, process efficiency and productivity can be improved.

In addition, since the substrate processing space can be formed symmetrically, the process yield can be improved by improving the uniformity of the substrate processing process.

Further, when a plurality of substrates are processed in the chamber, the space in which each of the substrates is processed can be easily separated. In addition, it is easy to attach and detach the gas spraying body, thereby reducing the cost of installing and maintaining the substrate processing apparatus. Further, since the curtain gas injection nozzle is provided in the extension portion, the space for processing the substrate can be independently formed, and the substrate processing efficiency can be improved.

1 is an exploded perspective view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention;
2 is a plan view of a part of a substrate processing apparatus according to an embodiment of the present invention.
3 is a cross-sectional view of the substrate processing apparatus shown in Fig. 1, taken along the line X-X 'shown in Fig. 2. Fig.
4 is a cross-sectional view showing a main configuration of a substrate processing apparatus according to an embodiment of the present invention;
5 is a perspective view schematically showing a configuration of a substrate supporting unit according to an embodiment of the present invention.
6 to 8 are sectional views schematically showing a configuration of a substrate processing apparatus according to a modification of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. However, the present invention is not limited to the embodiments described below. It is provided to let you know. In the drawings, the thicknesses are exaggerated or enlarged to clearly illustrate each element, and the same reference numerals denote the same elements in the drawings.

2 is a plan view of a part of a substrate processing apparatus according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of the substrate processing apparatus shown in FIG. 1, FIG. 4 is a cross-sectional view illustrating a configuration of a main part of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. Fig. 3 is a perspective view schematically showing a configuration of a substrate supporting part according to an example.

A substrate processing apparatus according to an embodiment of the present invention is an apparatus for processing a semiconductor or various substrates in a vacuum atmosphere. In the following, an apparatus capable of processing a plurality of substrates in a single chamber will be exemplified.

Referring to FIG. 1, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 forming a processing space, a substrate support 130 disposed inside the chamber 100 and supporting the substrate W, A gas injecting body 110 disposed opposite to the supporting part 130 and injecting a process gas toward the substrate supporting part 130, a substrate moving part 140 positioned outside the substrate supporting part 130 and assisting the substrate conveyance do.

The chamber 100 includes a main body 101 with an open top and a top lead 102 which is openable and closable at the top of the main body 101.

The main body 101 is formed with a substrate support receiving groove 109 in which a substrate supporting part 130 is disposed and the substrate supporting part receiving groove 109 is formed in a shape corresponding to the shape of a substrate supporting part 134 And may be formed to have a predetermined depth. The substrate support receiving grooves 109 may be formed to a depth of about the vertical movement range of the substrate support 134. With such a configuration, it is possible to reduce the space formed inside the chamber 100, thereby reducing the amount of process gas supplied into the chamber 100 for substrate processing, Time can be shortened. The substrate support receiving groove 109 may be formed with a through hole into which the supporting shaft 132 of the substrate supporting part 130 is inserted. When a plurality of substrates, for example, four substrates, are processed in the chamber 100, four substrate support receiving grooves 109 may also be formed. At this time, an exhaust passage (not shown) formed horizontally along the bottom surface of the main body 101 may be formed so as to communicate with the adjacent substrate support receiving grooves 109 through the side surfaces of the four substrate support receiving grooves 109, The exhaust channels are connected to an exhaust port 310 connected to an external vacuum pump 320 and connected to an exhaust port 300 formed through the bottom of the main body 101 in a vertical direction. At this time, the bottom of the main body 101 may be provided with flow path covers 108a, 108b, 108c, and 108d covering the exhaust flow paths. A substrate support receiving groove 109 in which the substrate support 134 of the substrate supporting part 130 is seated is formed in the main body 101 and the substrate support receiving groove 109 is communicated with the exhaust channel, The amount of process gas supplied into the chamber during substrate processing can be reduced, and the time required for purging the interior of the chamber can be shortened, thereby improving process efficiency and productivity Can be improved.

The through hole 107 may be formed at the center of the main body 101. The through hole 107 may be formed at the bottom of the main body 101. The through hole 107 may be formed at the center of the main body 101,

Gates 105a and 105b for loading and unloading the substrate into the chamber 100 may be formed on the side surface of the body 101. [

The top lead 102 is coupled to the top of the main body 101 to close the inside of the main body 101. The top lead 102 may be formed to cover the entire upper portion of the main body 101 and may be coupled to the gas spraying body 110 to cover at least a part of the upper portion of the main body 101 May also be formed. 1, in order to facilitate mounting and dismounting of the gas jet 110, the top lead 102 is provided with an insertion port 104 penetrating the top lead 102 in the up and down direction, So that the gas spraying body 110 can be inserted and fixed from the top of the top lead 102 through the insertion port 104. [ At this time, the step 103 is formed along the inner edge of the insertion port 104 so that the upper side of the insertion port 104 is formed in a form of a stronger upper light than the lower side so that the gas injection body 110 is inserted into the insertion port 104 So that it can be supported by the step 103. A step 112 having a shape corresponding to the side shape of the top lead 102 may be formed on the side wall of the gas jet 110 so as to be supported by the step 103 of the top lead 102. In other words, the gas spraying body 110 can also be formed to have a larger upper light intensity distribution shape than the lower side where the process gas is injected, and can be engaged with and fixed to the insertion port 104. The gas spraying body 110 can be seated on the side wall of the top lead 102 to cover the upper portion of the main body 101 of the chamber 100 and can be easily separated from the top lead 102 .

In addition, the top lead 102 may have an extension portion 102 'extending downward in the vertical direction. That is, as shown in FIG. 5, the top lead 102 may be formed to extend longer by 'Y' than the bottom surface where the process gas is injected from the gas injecting body 110 at the bottom. With such a configuration, substantially the substrate processing space in the chamber 100 can be formed in the top lead 102 of the main body 101, that is, by the extension 102 '. At this time, the extension portion 102 'is formed so that the end of the extension portion 102' is located up to a height at which the upper surface of the substrate support 134 is positioned when the substrate support 134 is raised for substrate processing, The substrate processing space can be formed in the top lead 102 when the substrate 134 rises. The substrate processing space may be formed in a number corresponding to the number of the substrate supports 130. The extended portion 102 'is formed so as to connect the edge of the top lead 102 and the edge of the top lead 102 to the center of the top lead 102 so that a substrate processing space is formed between the extended portions 102' . At this time, the inner circumferential surface of the extension portion 102 'can form a substrate processing space having a symmetrical structure by forming one continuous surface in which no structure exists. In other words, the distance from the edge of the substrate support 134 or the edge of the substrate to the inner wall of the extension 102 'may be the same when the substrate support on which the substrate is mounted for substrate processing is raised. This is because there is no structure in the horizontal direction within the substrate processing space. In the conventional case, the substrate processing space is formed in the main body 101 in which the gates to be loaded and unloaded are formed, and the substrate processing space is asymmetrically formed due to the gates. However, in the embodiment of the present invention, Since there is no such structure as the exhaust port connected to the gate or the exhaust line in the lower portion of the top lead 102, i.e., the extension 102 ', the inner circumferential surface of the extension 102' A symmetrical substrate processing space can be formed.

The plurality of substrate processing spaces formed as described above may be provided with the gas jet bodies 110, respectively. The gas jet 110 may form an upper portion of the chamber 100 together with the top lead 102. The gas jet 110 may be connected to a single gas supply source supplying the same kind of gas or may be connected to a plurality of gas supply sources supplying different kinds of gas, respectively. The gas jet 110 may be manufactured as a showerhead type having a plurality of jet holes and having a predetermined area and facing the substrate support 134.

On the other hand, since the gas jet 110 can be used as an upper electrode when plasma is formed in the chamber 100, it can be usually formed as a conductor. Also, the top lead 102 and the main body 101 may be formed of a conductor. Therefore, when power is applied to the gas spraying body 110 to form plasma in the chamber 100, insulation between the top lead 102 and the gas spraying body 110 is required so that the RF power can be stably applied . The gas injecting body 110 and the top lead 102 can be insulated from each other through the insulator 120 between the gas jet 110 and the top lead 102. [ At this time, the insulator 120 may be formed to have a concavo-convex structure corresponding to a step formed on the sidewall of the top lead 102 and the gas jet 110. Here, the insulator 120 may have a separate structure, but the insulator may be coated on the sidewalls of the top lead 102 and the gas injector 110.

The substrate supporting part 130 is provided below the inside of the chamber 100 as a structure for supporting the substrate W. The substrate support 130 may include a substrate support 134 on which the substrate is mounted and a support shaft 132 for raising and lowering the substrate support 134 below the substrate support 134.

Referring to FIG. 5, the substrate support 134 may have a plate-like shape having a predetermined thickness and may have a shape similar to that of the substrate W. FIG. For example, if the substrate is a circular wafer, it can be formed into a disk shape. Of course, the present invention is not limited thereto and various shapes can be changed. The substrate support 134 is horizontally disposed inside the chamber 100 and the support shaft 132 is vertically connected to the bottom surface of the substrate support 134. The support shaft 132 is connected to driving means (not shown) such as an external motor through a through hole to raise and lower the substrate support table 134. At this time, the space between the support shaft 132 and the through-hole is sealed by using a bellows (not shown) or the like, thereby preventing the vacuum in the chamber 100 from being released in the course of processing the substrate. The substrate support 134 rises in the substrate processing process to form a substrate processing space with the extension 102 'where a predetermined spacing is provided between the edge of the substrate support 134 and the inner wall of the extension 102' And can be used as an exhaust path of the process gas.

The shape and structure of the substrate support 134 are not particularly limited as long as the substrate support 134 can support and support the substrate. 5, a substrate support ring (not shown) is mounted on an edge region of the substrate support 134, so that the substrate support ring 150 supporting and transporting the substrate W can be stably and accurately positioned. 150 may be mounted on the stepped portion 136. The substrate support ring 150 will be described later in detail.

The substrate support 134 may comprise an insulator 120 material. That is, the entire substrate support 134 may be made of the insulator 120 or a part thereof may be made of the insulator 120, and the insulator 120 may be formed on the surface of the substrate support 134 . At this time, various ceramic materials can be used as the insulator 120. For example, aluminum nitride (AlN), silicon carbide (SiC), or the like can be used. In addition, a heating element (not shown) for heating the substrate support 134 may be provided inside the substrate support 134, and the heating element is connected to an external power source through a wire (not shown). When power is applied to the heating element, the substrate support 134 is heated, thereby heating the substrate W that is seated on the substrate support 134. The heating element may be installed in various ways and structures, and is not particularly limited. As such a heating element, tungsten (W), molybdenum (Mo), or the like can be used.

The substrate support 134 not only supports the substrate, but can also act as a lower electrode. In other words, it can act as a lower electrode so that an electric field is formed between the substrate support 134 and the gas jet 110. For example, an RF power source may be applied to the gas jet 110 and a ground power may be applied to the substrate support 134 to form an electric field therebetween to generate plasma. At this time, a ground electrode (not shown) may be provided inside the substrate support 134 to ground the substrate support 134.

A plurality of the substrate supporting portions 130 may be provided in the chamber 100. For example, as shown in FIGS. 1 and 2, four substrate supports 130a, 130b, 130c, and 130d may be provided in the chamber 100. FIG. At this time, the substrate supporting portions 130a, 130b, 130c, and 130d can be arranged symmetrically. That is, they can be arranged in a point symmetry about the center of the chamber 100. Of course, the number of the substrate supports 130a, 130b, 130c, and 130d may be four or less, or more.

The substrate moving part 140 moves the substrate between the substrate supporting part and the substrate supporting part in the chamber 100 when a plurality of the substrate supporting parts 130a, 130b, 130c and 130d are installed in the chamber 100. [ The substrate moving part 140 includes a rotating shaft 142 inserted in a through hole passing through the bottom of the main body 101 and arranged in the vertical direction and a turntable 144 arranged in the horizontal direction on the rotating shaft 142 do. At this time, the rotation shaft 142 is disposed at the center of the plurality of support shafts 132 constituting the plurality of substrate support parts 130, and driving means such as an external motor is connected to rotate the turntable 144 up, . The space between the rotating shaft 142 and the through-hole is sealed by using a bellows (not shown) or the like to prevent the vacuum in the chamber 100 from being released in the process of processing the substrate. The turntable 144 is plate-shaped having a predetermined thickness and has openings 143a, 143b, 143c, and 143d into which the substrate support 134 is inserted. For example, if the substrate support 134 is disk-shaped, the opening may be formed in a circular shape, but one side may be opened as shown in Fig. In this case, the corners of the square-shaped turntable 144 may be chamfered to reduce the radius of rotation of the turntable 144, thereby reducing the size of the chamber. Of course, the shape of the opening is not limited to this and can be changed into various shapes.

The turntable 144 may include a conductive material. That is, the entire turntable 144 may be formed of a conductor, a part of the conductor may be formed of a conductor, or a conductor layer may be coated on the surface of the turntable 144. For example, the turntable 144 may be made of metal such as aluminum. The turntable 144 can serve as an auxiliary ground electrode on the outside of the substrate support 134 and can move up and down and move between the substrate support 134 and the gas sprayer 110 Lt; RTI ID = 0.0 > plasma. ≪ / RTI >

The turntable 144 may have a protrusion 146 protruding inwardly to support the substrate support ring 150 described above. The projection 146 protrudes toward the inner side of the turntable 144, more precisely toward the inner side from the inner wall of the opening 143. The projection 146 is provided at a plurality of positions to selectively support the substrate support ring 150. For example, protruding toward the center of the opening 143 at the three positions of the opening 143, as shown in Fig. The turntable 144 may be modified into various structures other than the protrusions 146 to support the substrate support ring 150. For example, if the projection 146 is formed discontinuously at the edge of the opening 143, the projection 146 may be a stepped portion formed continuously along the edge of the opening 143. At this time, the step may be formed with a step lower than the upper surface of the turntable 144, and by forming the inner diameter of the opening 143 formed by the step to be smaller than the outer diameter of the substrate supporting ring 150, 150 can be supported.

The turntable 144 may be fabricated from a single plate positioned outside each substrate support 134 when a plurality of substrate supports 130 are installed in the chamber 100. For example, as shown in FIG. 1, when four substrate supports 134 are disposed in the chamber 100, the turntable 144 is made of one plate having four openings 143, The substrate support 134 may be disposed inside the substrate support 143.

The substrate support ring 150 is selectively supported on the substrate support 134 and the turntable 144 and is used to transfer the substrate W in the chamber 100. That is, the substrate support ring 150 is seated on the edge of the substrate support 134 on the substrate support 134 and on the projection 146 or step protruding inward on the turntable 144. The substrate support ring 150 supports the edge of the bottom surface of the substrate at the bottom of the substrate and may be formed in a shape corresponding to the outer shape of the substrate W supported thereon. For example, if the substrate W is a disk-shaped wafer, the substrate support ring 150 may be in the form of a circular ring having a predetermined width. At this time, the width of the substrate support ring 150 is such that the edge of the substrate W can be stably supported. In addition, the thickness of the substrate support ring 150 may be less than or equal to the thickness of the step of the substrate support 134. The substrate support ring 150 may have a seating groove on which the substrate is mounted. The substrate W can be supported while stably contacting the upper surface of the substrate support 134 when the substrate support ring 150 and the substrate W supported thereon are positioned on the substrate support 134 .

The substrate support ring 150 is heated by a heating element provided on the substrate support 134 during substrate processing so that a temperature deviation occurs in the edge region of the substrate W supported by the substrate support ring 150 The substrate support 134 may be formed of a material similar to that of the substrate support 134.

The turntable 144 and the substrate support ring 150 described above are used to transfer the substrate W between the plurality of substrate supports 134 or to move the substrate in the up and down direction in the chamber. That is, the turntable 144 rotates while supporting the substrate by the substrate support ring 150, and moves the position of the substrate. Referring to FIG. 2, a case where the substrate placed on the substrate support 134 at the position B is moved to the substrate support 134 at the position C will be described as follows. When the support shaft 132 of the substrate support 130 descends, the substrate is supported on the turntable 144 while being seated on the edge of the substrate support ring 150. When the turntable 144 is rotated clockwise by about 90 degrees, the substrate positioned at the substrate support 134 at the position B is moved to the position C. When the support shaft 132 of the substrate support 130 is raised, The substrate supported by the substrate support 144 is seated on the substrate support 134 at the C position. The turntable 144 moves the substrate in this manner and places the substrate loaded into the chamber through the substrate transfer robot on the substrate support or unloads the processed substrate. In addition, the substrate can be sequentially moved to each processing region for substrate processing.

The gas jet 110 is arranged to face the substrate support 134 inside the chamber 100 and emits the process gas for substrate processing to the substrate support 134 side. In addition, the gas jet 110 may be connected to an external power source (not shown) and used as an upper electrode for plasma generation. For example, RF (Radio Frequency) power is applied to the gas jet 110 and the substrate support 134 is grounded to excite the plasma using RF to the reaction space, which is the deposition space in the chamber 100. At this time, the substrate support 134 may be grounded via the internal ground electrode. Here, it is described that the RF power is applied to the gas jetting body to form a plasma in the substrate processing space. However, the gas jetting body may excite the process gas into the substrate processing space and excite the process gas outside the chamber It is of course also possible to inject into the substrate processing space.

A controller (not shown) controls driving of the support shaft 132, the rotation shaft 142, the gas jet 110, and the power source. In particular, the controller can move the substrate smoothly within the chamber 100 by independently controlling the height of the substrate support 134 and the turntable 144 by independently driving the support shaft 132 and the rotating body.

In the above description, a plurality of, for example, four substrate supporting portions are provided in the chamber, but a single substrate supporting portion may be provided in the chamber. In this case, since there is no need to move the substrate between the substrate supports in the chamber, the structure of the substrate can be excluded, and the remaining configurations are all the same.

Modifications of the substrate processing apparatus will be described below.

6 to 8 are sectional views schematically showing a configuration of a substrate processing apparatus according to a modification of the present invention.

Referring to FIG. 6, a step may be formed on the extension 102 'of the top lead 102. The stepped portion is formed so that the lower side of the extension portion 102 'is lowered by' Z 'in the outward direction of the chamber 100 to be supplied to the substrate processing space formed by the extension portion 102' and the substrate support 134 It is possible to increase the exhaust path of the process gas. That is, the extension 102 'of the top lead 102 may be formed thicker than the thickness of the main body 101 of the chamber 100. In this case, the exhaust path of the process gas injected from the gas injector 110 is sufficient A portion of the extended portion 102 ', specifically, the lower portion thereof is formed in the form of a recessed shape outwardly of the substrate processing space, and the exhaust gas formed between the substrate support 134 and the extended portion 102' The exhaust efficiency can be improved by increasing the width (horizontal length) of the path. Referring to FIG. 7, a curved surface may be formed on the extension 102 'of the top lead 102. As shown in FIG. 4, when a step is formed in the extension 102 'of the top lead 102, apices are formed in the region where the step is formed. In the case of forming a plasma in the substrate processing region There is a problem that the plasma may be concentrated on the substrate, the plasma may not be formed uniformly throughout the substrate processing region, and the top lead 102 may be damaged. By forming the curved surface T on the extended portion 102 ', the plasma can be uniformly formed in the substrate processing space and the damage of the top lead 102 due to the plasma can be suppressed.

Referring to FIG. 8, a curtain gas spraying unit 200 for spraying a curtain gas to the extended portion 102 'of the top lead 102 may be formed. The curtain gas jetting portion 200 may be formed to inject curtain gas along the edge of the substrate support 134 to the extension 102 'of the top lead 102. In addition, the curtain gas jetting section 200 may be formed to jet a curtain gas over an area other than the substrate support 134. The curtain gas spraying part 200 forms a gas diffusion space 210 into which the curtain gas flows into the extension part 102 'of the top lead 102 and forms a gas diffusion space 210 and the ejection plate 230 on which a plurality of ejection holes are formed. The gas diffusion space 210 may be connected to an external curtain gas source through an inlet tube 201 passing through the top lead 102. At this time, the gas diffusion space 210 may be formed in various shapes according to the curtain gas injection area as described above, and may be formed in a ring shape to inject the curtain gas along the edge of the substrate support 134, for example. The gas diffusion space is divided into a plurality of layers 210a and 210b through a diffusion plate 220 in which a plurality of injection holes are formed in the gas diffusion space 210, And then injected into the chamber 100 through the injection plate 230. [ The curtain gas spraying unit 200 may be formed to inject gas in a vertical direction or to be tilted. Since the insulator 120 is interposed between the top lead 102 and the gas jet 110 in the latter case, the position of the curtain gas jet 200 is spaced apart from the gas jet 110, May be difficult to eject along the edge of the substrate support 134. Accordingly, by forming the curtain gas spraying unit 200 by tilting, the curtain gas can be sprayed along the edge of the substrate support table 134 to more accurately separate each substrate processing space.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

100: chamber 101:
102: Top lead 102 ': Extension
110: gas jet 130: substrate support
140: substrate moving part 150: substrate supporting ring

Claims (11)

A main body in which an upper portion is opened, an inner space is formed, and an exhaust port is formed in a lower portion,
A top lead provided at an upper portion of the main body and covering at least a part of an upper portion of the main body,
A substrate support provided in the main body to support the substrate,
And a gas spraying body mounted on the top lead so as to face the substrate support and spraying a process gas to the substrate support,
Wherein the top lead is provided with an extension portion extending in a vertical direction and forming a space in which a substrate is processed, and between the edge of the substrate support and the inner wall of the extended portion in the space where the substrate is processed, Is formed. The method according to claim 1,
A plurality of spaces are formed in the top leads for processing the substrate,
Wherein the gas distribution body and the substrate support are provided in a number corresponding to the number of the spaces in which the substrate is processed ,
And a substrate moving portion for moving the substrate between the plurality of substrate supports is provided in the main body. The method of claim 2,
The substrate
A rotating shaft which is arranged in the vertical direction in the main body and is rotated, raised and lowered,
A turntable connected to the upper portion of the rotating shaft in a horizontal direction and having a plurality of openings through which the plurality of substrate supports pass,
And a plurality of substrate supporting rings provided on the turntable at positions corresponding to the openings to support the edges of the substrate,
Wherein the opening is provided with a projection inwardly of the opening to support the substrate support ring,
Wherein the substrate support ring is selectively supported on the substrate support and the turntable. The method of claim 3,
Wherein the top lead is provided with a curtain gas injection portion for injecting a curtain gas. The method of claim 4,
The curtain gas injection unit
A curtain gas diffusion space communicating with an outside curtain gas supply source inside the top lead,
And a jet plate coupled to the curtain gas diffusion space at a lower portion of the top lead and having a plurality of jet holes formed therein. The method of claim 5,
Wherein the curtain gas diffusion space is divided into a plurality of layers in the curtain gas diffusion space, and the diffusion plate is provided with a plurality of injection holes. The method according to any one of claims 1 to 6,
Wherein the top lead is provided with an insertion port penetrating the top lead in the vertical direction,
And a step for supporting the gas spraying body inserted through the insertion port is formed at the inner edge of the insertion port. The method of claim 7,
And an insulator is provided between the top lead and the gas injection body. The method of claim 7,
Wherein an inner circumferential surface of the extending portion is formed as a single continuous surface. The method of claim 7,
Wherein at least a part of the extension part is cut out of a space in which the substrate is processed and the width of the exhaust path increases as it goes downward. The method of claim 7,
Wherein a curved surface is formed on at least a part of the extended portion.

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