CN112635353A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN112635353A
CN112635353A CN202011034094.6A CN202011034094A CN112635353A CN 112635353 A CN112635353 A CN 112635353A CN 202011034094 A CN202011034094 A CN 202011034094A CN 112635353 A CN112635353 A CN 112635353A
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China
Prior art keywords
substrate
turntable
chamber
processing apparatus
stage
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CN202011034094.6A
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Chinese (zh)
Inventor
崔宇镇
朴永秀
柳守烈
孙侐主
朴商弼
吴俊昊
李民荣
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System Technology
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System Technology
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Publication of CN112635353A publication Critical patent/CN112635353A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides a substrate processing apparatus capable of improving process efficiency by eliminating a component replacement time and an apparatus start-up preparation time by processing substrates having different sizes in one apparatus. The substrate processing apparatus of the present invention for achieving this is for processing a substrate, and includes: and substrate support pins supporting a bottom surface of the substrate and formed with at least two substrate seating parts for seating substrates of different sizes from each other.

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of processing substrates having different sizes in one apparatus.
Background
In general, in a semiconductor process, a substrate processing process under various conditions such as heating or cooling of a substrate can be performed in a chamber isolated from the outside. A substrate processing apparatus for performing such a substrate processing step includes substrate support pins for supporting a bottom surface of a substrate.
The substrate is manufactured in various sizes by different semiconductor manufacturers, and a company manufacturing the substrate processing apparatus manufactures an apparatus for processing a substrate having a size required by the semiconductor manufacturer. Since the sizes of substrates required by semiconductor manufacturers are different from each other, after a substrate having a predetermined size is processed, it is necessary to replace some of the components of the apparatus in order to process or transfer a substrate having a different size.
As described above, there is a problem that a lot of time such as a replacement preparation time, a replacement time, and an apparatus start preparation time is required to replace a part of the components of the apparatus.
A prior art as a substrate processing apparatus for processing a substrate is disclosed in korean patent laid-open No. 10-1491992.
The related art is equipped with a turntable rotatable for transferring a substrate to another chamber, the turntable being equipped with a seating ring on which the substrate is seated. The seating ring can seat only one size of substrate, thus requiring more parts to be replaced if a different size of substrate is to be seated.
Disclosure of Invention
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate processing apparatus capable of improving process efficiency by eliminating a component replacement time and an apparatus start-up preparation time by processing substrates having different sizes in one apparatus.
The substrate processing apparatus according to the present invention for processing a substrate to achieve the above object includes: and substrate support pins supporting a bottom surface of the substrate and formed with at least two substrate seating parts for seating substrates of different sizes from each other.
The substrate processing apparatus includes: a stage provided to heat or cool the substrate; a plurality of chambers arranged at predetermined intervals in a circumferential direction for processing the substrate; and a turntable configured to rotate in order to transfer the substrate between the plurality of chambers, wherein the turntable may be coupled with the substrate support pin.
The plurality of substrate support pins may be coupled to the turntable in a spaced-apart arrangement at predetermined intervals along the periphery of the stage.
The substrate support pin may be formed with a first substrate seating portion where a first substrate is seated and a second substrate seating portion where a second substrate having a different size from the first substrate is seated, and the first and second substrate seating portions may be formed to have a step difference at positions spaced apart in a center direction of the substrate.
A first inclined portion and a second inclined portion inclined upward in an outward direction to guide an edge position of the substrate may be formed at radially outer sides of the first substrate seating portion and the second substrate seating portion, respectively.
An intermediate portion having a height between the first substrate seating portion and the second substrate seating portion may be formed between the first substrate seating portion and the second substrate seating portion.
The substrate mounting part of the at least two substrate mounting parts, which is located at the outer side in the radial direction of the substrate, may be formed with a turntable coupling part for coupling to the turntable at the outer side in the radial direction.
The turntable coupling portion may be formed with a fastening hole for coupling the substrate support pin to the turntable by a fastening member.
The turntable is equipped to be capable of being lifted and lowered, and the lifting and lowering of the turntable may be performed in a state where the substrate is seated on the substrate supporting pins.
The turntable includes: a turntable main body rotated by a turntable driving part; and an annular turntable ring provided to be detachable from the turntable body in a state of being supported and seated at an edge position of each of a plurality of opening portions penetrating the turntable body and formed in a number corresponding to the plurality of chambers, wherein the substrate support pin may be coupled to the turntable ring.
A stage driving part providing a driving force for elevating the stage in an up-down direction is provided, the loading and unloading of the substrate may be performed in a state where a first space having a first chamber of the stage and a second space of the first chamber provided at a lower side of the first space and communicating with the plurality of chambers are spatially separated from each other, and if the stage and the turntable ring are moved in an upward direction together by the driving of the stage driving part, the loading and unloading of the substrate may be performed in a state where the turntable ring is closely attached to a thin plate part provided at a boundary of the first space and the second space.
A first sealing member for maintaining airtightness is provided between the upper surface of the turntable ring and the thin plate portion, and a second sealing member for maintaining airtightness may be provided between the bottom surface of the turntable ring and the edge position portion upper surface of the stage.
The plurality of chambers includes: a first chamber to perform loading and unloading of the substrate; a second chamber, a third chamber, and a fourth chamber for heating the substrate loaded in the first chamber to perform a thermal process; and a fifth chamber cooling the substrate thermally processed in the fourth chamber, wherein the substrate of the fifth chamber may be transferred to the first chamber, cooled, and then unloaded.
According to the substrate processing apparatus of the present invention, substrates having different sizes can be processed in one substrate processing apparatus without additionally replacing components, so that the time required for substrate processing can be shortened to improve process efficiency.
Drawings
Fig. 1 is a plan view showing a substrate processing apparatus according to the present invention.
Fig. 2 is a perspective view showing an internal structure of each chamber in the substrate processing apparatus according to the present invention.
Fig. 3 is a plan view showing a state where a stage of a fourth chamber and a substrate support pin are provided in a main body casing of a substrate processing apparatus according to the present invention.
Fig. 4 is a sectional view taken along line a-a of fig. 3 and a partially enlarged view.
Fig. 5 is a perspective view showing a substrate support pin of the present invention.
Fig. 6 is a sectional view showing a state where the substrate support pin of the present invention is provided with the first substrate.
Fig. 7 is a sectional view showing a state where a second substrate is mounted on the substrate support pins of the present invention.
Fig. 8 is a sectional view showing a state in which the substrate is supported by the lift pins in a state in which the first space and the second space are partitioned in the substrate processing apparatus according to the present invention.
Fig. 9 is a sectional view showing a state in which the lift pins are lowered and the substrate is seated on the upper surface of the stage in the state of fig. 8.
Fig. 10 is a sectional view showing a state where the table and the lift pins are lowered to a position where the turntable ring is seated on the turntable body in the state of fig. 9.
Fig. 11 is a sectional view showing a state in which the turntable is raised in the state of fig. 10, and the substrate is spaced apart from the upper surface of the stage.
Fig. 12 is a sectional view showing a state in which the turntable is rotated in the state of fig. 11, and the substrate in the first chamber is transferred to the second chamber.
Description of the symbols:
1: substrate processing apparatus 2: equipment front end module
2 a: substrate loading unit 2 b: substrate transfer unit
100: first chamber 100 a: upper chamber
100 b: lower chamber 100 c: sheet part
110. 210, 310, 410, 510: platforms 101, 102, 103, 104, 105: opening part
200: the second chamber 300: third chamber
400: fourth chamber 500: the fifth chamber
600: the rotating disk 610: rotary disc main body
620: opening 630: rotating disc ring
700: substrate support pin 710: turntable joint part
711: fastening hole 721: a first substrate mounting part
722: first inclined portion 723: second substrate mounting part
724: second inclined portion 725: intermediate section
Detailed Description
Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the drawings.
A substrate processing apparatus 1 according to an embodiment of the present invention will be described with reference to fig. 1, 2, and 3.
The substrate processing apparatus 1 includes: a plurality of chambers 100, 200, 300, 400, 500 arranged at predetermined intervals in a circumferential direction for processing a substrate; the turntable 600 is provided to rotate in order to transfer the substrate between the plurality of chambers 100, 200, 300, 400, 500.
In the substrate processing apparatus 1 of the present invention, the reflow process can be performed, for example. In the substrate processing apparatus 1 according to the present invention, the step using heat may be performed without performing the reflow step. The present invention can be applied to various substrate processing apparatuses other than the apparatus shown in fig. 1.
The plurality of chambers 100, 200, 300, 400, 500 may include: a first chamber 100 for performing loading and unloading of the substrate; a second chamber 200, a third chamber 300, and a fourth chamber 400 for heating and thermally treating the substrate loaded in the first chamber 100; a fifth chamber 500 cooling the substrate heat-treated in the fourth chamber 400.
The loading and unloading of the substrate in the first chamber 100 may be performed, but the substrate heat-treated sequentially passes through the second chamber 200, the third chamber 300, the fourth chamber 400, and the fifth chamber 500 to be cooled, and the heating process of the substrate may be performed in the second chamber 200, the third chamber 300, the fourth chamber 400, and the fifth chamber 500.
The fifth chamber 500 may be configured to perform a cooling process before the first chamber 100 is cooled. At this time, the fifth chamber 500 may be configured to be equipped with a heater to heat the substrate, but the substrate is cooled by setting the heating temperature of the substrate to be lower than the temperature at which the substrate is heated in the fourth chamber 400.
An Equipment Front End Module 2 (EFFM) is connected to one side of the first chamber 100.
The device front-end module 2 has the following functions: the unprocessed substrates loaded on the substrate loading portion 2a are loaded into the first chamber 100 of the substrate processing apparatus 1 by a transfer robot (not shown) provided in the substrate transfer portion 2b, or the substrates that have been processed in the substrate processing apparatus 1 are unloaded from the first chamber 100 and loaded on the substrate loading portion 2 a.
The temperature of the substrates heated in the second, third, fourth, and fifth chambers 200, 300, 400, and 500 may be set to 100 to 450 ℃. Also, the second, third, fourth, and fifth chambers 200, 300, 400, and 500 may be respectively equipped with heaters that generate heat in order to heat the substrate. The shape and size of the heater may be variously changed, and the heaters may be respectively provided at the upper and lower portions of the substrate.
The first chamber 100, the second chamber 200, the third chamber 300, the fourth chamber 400, and the fifth chamber 500 may be respectively equipped with stages 110, 210, 310, 410, 510. A substrate is seated on an upper surface of the stage 110 of the first chamber 100 and may be cooled by a cooling unit. The stages 210, 310, 410, 510 of the remaining chambers 200, 300, 400, 500 except for the stage 110 of the first chamber 100 are provided with heaters so that a process of applying heat to a substrate may be performed.
A main body housing 10 is provided, the main body housing 10 surrounding the entire outer sides of the first chamber 100, the second chamber 200, the third chamber 300, the fourth chamber 400, the fifth chamber 500, and the turntable 600, and having a function of a support frame capable of disposing the respective components.
In the main body case 10, openings 101, 102, 103, 104, and 105 are formed at positions corresponding to the stages 110, 210, 310, 410, and 510, and the stages 110, 210, 310, 410, and 510 can be vertically inserted through the main body case 10.
The turntable 600 includes: a turntable main body 610 rotated by a turntable driving part (not shown); a plurality of openings 620 penetrating the turntable main body 610 and formed along a circumferential periphery in a number corresponding to the plurality of chambers 100, 200, 300, 400, 500; an annular dial ring 630 is provided to be supported and installed at an edge of each of the opening portions 620 so as to be separable from the dial body 610.
The turntable driving part may be provided to rotate the turntable 600 and to lift and lower the turntable 600 in the vertical direction. With such a configuration, the substrate can be transferred from one chamber to an adjacent chamber.
The first, second, third, fourth and fifth chambers 100, 200, 300, 400 and 500 are each provided with a plurality of the substrate support pins 700. The plurality of substrate support pins 700 provided at the respective chambers are provided to be spaced apart at predetermined intervals along the periphery of the central stage 110, 210, 310, 410, 510.
Although fig. 3 illustrates the substrate support pins 700 provided around the stage 410 provided in the fourth chamber 400, the substrate support pins 700 are similarly provided in the other chambers 100, 200, 300, and 500.
The structure of the substrate support pin 700 constituting the substrate processing apparatus according to the present invention will be described with reference to fig. 4 and 5.
The substrate support pin 700 supports a bottom surface of a substrate, and is formed with at least two substrate seating portions to enable seating of substrates of different sizes from each other. For example, the two substrate seating portions may be composed of a first substrate seating portion 721 seating a first substrate as a 300mm wafer and a second substrate seating portion 723 seating a second substrate as a 200mm wafer. In the present embodiment, the substrate support pins 700 having two substrate placement portions are described as the target, but a larger number of substrate placement portions may be formed.
The first substrate seating portion 721 and the second substrate seating portion 723 are formed in a shape capable of supporting the bottom surface of the substrate by a predetermined length in the radial direction of the substrate. Further, if the contact area between the bottom surface of the substrate and the first substrate mounting portion 721 and the second substrate mounting portion 723 is large, heat of the first substrate mounting portion 721 and the second substrate mounting portion 723 may be transferred to the substrate, thereby affecting the heat treatment of the substrate. Therefore, it is preferable to minimize a contact area of the bottom surface of the substrate with the first substrate seating portion 721 and the second substrate seating portion 723. For this reason, the substrate support pin 700 is preferably formed in a shape having a height higher up and down than a width (thickness).
The first substrate seating portion 721 and the second substrate seating portion 723 may be formed to have a step difference at positions spaced apart in a center direction of the substrate. That is, the first substrate mounting portion 721 may be formed at a higher position than the second substrate mounting portion 723.
A first inclined portion 722 and a second inclined portion 724 inclined upward in an outer direction for guiding an edge position of the substrate when the substrate is mounted are formed at outer sides in a radial direction of the first substrate mounting portion 721 and the second substrate mounting portion 723 (i.e., outer sides in the radial direction with respect to the center of the stage).
An intermediate portion 725 is formed between the first substrate mounting portion 721 and the second substrate mounting portion 723, and the vertical height thereof is set between the first substrate mounting portion 721 and the second substrate mounting portion 723. That is, the intermediate portion 725 is formed to have a height lower than the height of the first board placing portion 721 and higher than the height of the second board placing portion 723.
If the height of the middle portion 725 is the same as the height of the first substrate seating portion 721, when the first substrate is seated on the first substrate seating portion 721, the contact area of the bottom surface of the substrate with the first substrate seating portion 721 is increased, so that heat of the first substrate seating portion 721 is transferred to the substrate, thereby affecting the heat treatment process of the substrate. With the present invention, even if the first substrate is disposed at the first substrate disposition part 721, the bottom surface of the substrate is spaced apart from the middle part 725, and thus heat transfer from the substrate support pins 700 to the substrate can be minimized.
Further, by minimizing the length of the first substrate mounting portion 721 and the second substrate mounting portion 723, the contact area between the bottom surface of the substrate and the first substrate mounting portion 721 and the second substrate mounting portion 723 can be minimized, thereby preventing the heat treatment process of the substrate from being affected.
Among the first substrate mounting portion 721 and the second substrate mounting portion 723, a first substrate mounting portion 721 located on the outer side in the radial direction of the substrate and a turntable coupling portion 710 for coupling the substrate support pin 700 to the turntable 600 are formed on the outer side in the radial direction of the substrate.
Fastening holes 711 for fastening the substrate support pin 700 to the turntable 600 using fastening members (not shown) are formed at the turntable coupling portion 710.
The turntable 600 is provided with a turntable ring 630 detachable from the turntable body 610, and the substrate support pin 700 may be coupled to the turntable ring 630 using a fastening member. Therefore, when the turntable ring 630 is separated from the turntable body 610, the substrate support pin 700 is also separated together with the turntable ring 630.
Referring to fig. 6, the first substrate W1 is disposed on the first substrate support 721. The bottom surface of the first substrate W1 contacts only the upper surface of the first substrate supporting part 721, and is spaced apart from and does not contact the upper surface of the middle part 725.
Referring to fig. 7, a second substrate W2 having a smaller diameter than the first substrate W1 is seated on the second substrate supporting portion 723. The bottom surface of the second substrate W2 contacts only the second substrate supporting portion 723.
In this way, since the first and second substrates W1 and W2 having different sizes can be processed in one substrate processing apparatus without additionally replacing components, time for replacing components is not required, and process efficiency can be improved.
The configuration and internal structure of the first chamber 100 having the substrate support pins 700 according to the present invention, which is one of the plurality of chambers 100, 200, 300, 400, and 500, will be described with reference to fig. 8.
The first chamber 100 is composed of an upper chamber 100a and a lower chamber 100b provided at a lower side of the upper chamber 100 a.
The upper chamber 100a is formed with a first space S1 therein, and the lower chamber 100b is formed with a second space S2 therein.
The loading and unloading of the substrate W in the first chamber 100 is performed in a state where the first space S1 and the second space S2 are spatially separated and do not communicate with each other.
The first space S1 has a function as a load lock portion for loading the substrate W on the substrate loading portion 2a by the transfer robot or unloading the substrate W having been subjected to the substrate processing onto the substrate loading portion 2a by the transfer robot.
The second space S2 is disposed with the turntable 600 and communicates with the adjacent other chambers 200, 300, 400, 500 to provide a path for transferring the substrate W between the respective chambers 100, 200, 300, 400, 500. That is, the second space S2 has a function of a passage for transferring the loaded substrate from the first chamber 100 to the second chamber 200, a function of a passage for transferring the substrate, which has been processed in the fifth chamber 500, to the load lock portion, and a function as a process chamber for performing cooling of the substrate before unloading.
One side surface of the upper chamber 100a forms an opening (not shown) for the entrance and exit of the loaded and unloaded substrate, and the opening is opened and closed by a gate valve (not shown).
The first chamber 100 is equipped with the following components: a stage 110 on which a substrate W is placed; and lift pins 160 for supporting the bottom surface of the substrate W and lifting the substrate W.
The stage 110 may be provided with a cooling means (not shown) for cooling the substrate loaded on the upper portion of the stage 110. And, a stage driving part (not shown) that provides a driving force to enable the stage 110 to ascend and descend in an up-and-down direction may be provided.
A thin sheet portion 100c protruding inward is formed at a boundary portion between the upper chamber 100a and the lower chamber 100 b. The platform 110 and the turntable ring 630 are raised, so that the upper surface of the turntable ring 630 is closely attached to the thin sheet portion 100 c. A first sealing member 170 is interposed between the upper surface of the turntable ring 630 and the thin sheet portion 100c, thereby maintaining airtightness. A second sealing member 180 is interposed between the bottom surface of the turntable ring 630 and the upper surface of the stage 110, thereby maintaining airtightness. In this state, the inner space of the first chamber 100 is isolated from the upper first space S1 and the lower second space S2 with respect to the stage 110.
A lift pin 160 is provided to penetrate the stage 110. A lift pin driving part (not shown) for vertically lifting the lift pin 160 is provided. If the lift pin driving part is driven to move the lift pins 160 up and down, the substrate W can be lifted and lowered in a state in which the upper ends of the lift pins 160 support the bottom surface of the substrate W.
The table 110 and the lift pins 160 are raised by the driving of the table driving part and the lift pin driving part. In this state, the substrate W is loaded from the substrate loading portion 2a into the upper chamber 100a or unloaded from the upper chamber 100a to the substrate loading portion 2a by the transfer robot.
At this time, the dial ring 630 is separated from the dial body 610 and moved upward.
Fig. 9 shows a state in which the lifter pin driving unit is driven to lower the lifter pin 160 in the state of fig. 8. If the lift pins 160 are lowered, the substrate W is seated on the stage 110.
Fig. 10 shows a state in which the stage driving unit is driven to lower the stage 110 in the state of fig. 9. At this time, the lift pin 160 is moved downward by the driving of the lift pin driving part. The turntable ring 630 and the substrate support pin 700 are lowered together with the stage 110 until the turntable ring 630 is seated on the turntable body 610.
Fig. 11 shows a state in which the turntable 600 is raised by driving the turntable driving unit in the state of fig. 10. When the turntable 600 is raised, the substrate W is raised together with the turntable 600 in a state where the bottom surface thereof is supported by the substrate support pins 700.
Fig. 12 shows a state in which the turntable 600 is rotated by driving the turntable driving unit in the state of fig. 11. When the turntable 600 rotates, the substrate W is transferred from the first chamber 100 to the adjacent second chamber 200.
As described above, the present invention is not limited to the above-described embodiments, and a person equipped with basic knowledge in the technical field to which the present invention belongs can realize obvious modified implementations which fall within the scope of the present invention without departing from the technical idea of the present invention claimed in the claims.

Claims (13)

1. A substrate processing apparatus for processing a substrate, comprising:
and substrate support pins supporting a bottom surface of the substrate and formed with at least two substrate seating parts for seating substrates of different sizes from each other.
2. The substrate processing apparatus according to claim 1, comprising:
a stage provided to heat or cool the substrate;
a plurality of chambers arranged at predetermined intervals in a circumferential direction for processing the substrate;
a turntable configured to rotate for transferring the substrate between the plurality of chambers,
wherein the turntable is coupled with the substrate support pin.
3. The substrate processing apparatus according to claim 2,
the plurality of substrate support pins are coupled to the turntable in a spaced-apart arrangement at predetermined intervals along the periphery of the stage.
4. The substrate processing apparatus according to claim 1,
the substrate supporting pin is provided with a first substrate placing part for placing a first substrate, a second substrate placing part for placing a second substrate different in size from the first substrate,
the first substrate seating portion and the second substrate seating portion are formed to have a step difference at positions spaced apart in a center direction of the substrate.
5. The substrate processing apparatus according to claim 4,
the first substrate mounting portion and the second substrate mounting portion are formed with a first inclined portion and a second inclined portion, respectively, on radially outer sides thereof, which are inclined upward in an outward direction to guide an edge position of the substrate.
6. The substrate processing apparatus according to claim 4,
an intermediate portion having a height between the first substrate mounting portion and the second substrate mounting portion is formed between the first substrate mounting portion and the second substrate mounting portion.
7. The substrate processing apparatus according to claim 2,
and a turntable coupling portion for coupling to the turntable is formed at the outer side in the radial direction of the substrate mounting portion positioned at the outer side in the radial direction of the substrate among the at least two substrate mounting portions.
8. The substrate processing apparatus according to claim 7,
the turntable coupling portion is formed with a fastening hole for coupling the substrate support pin to the turntable by a fastening member.
9. The substrate processing apparatus according to claim 2,
the turntable is equipped to be able to be raised and lowered,
the turntable is lifted and lowered in a state where the substrate is seated on the substrate supporting pin.
10. The substrate processing apparatus according to claim 2,
the turntable includes:
a turntable main body rotated by a turntable driving part;
an annular turntable ring provided to be separable from the turntable body in a state of being supported and seated at an edge position of each of a plurality of opening portions that penetrate the turntable body and are formed in a number corresponding to the plurality of chambers,
wherein the substrate support pin is coupled to the turntable ring.
11. The substrate processing apparatus according to claim 10,
a platform driving part providing a driving force for lifting the platform in an up-and-down direction is provided,
the loading and unloading of the substrate is performed in a state where a first space of a first chamber having the stage and a second space of the first chamber disposed at a lower side of the first space and communicating with the plurality of chambers are spatially separated from each other, and if the stage and the turntable ring are moved upward together by the driving of the stage driving part, the loading and unloading of the substrate is performed in a state where the turntable ring is closely attached to a thin sheet part provided at a boundary of the first space and the second space.
12. The substrate processing apparatus according to claim 11,
a first sealing member for maintaining airtightness is provided between the upper surface of the turntable ring and the thin sheet portion,
a second sealing member for maintaining airtightness is provided between the bottom surface of the turntable ring and the upper surface of the edge position portion of the stage.
13. The substrate processing apparatus according to claim 2,
the plurality of chambers includes: a first chamber to perform loading and unloading of the substrate; a second chamber, a third chamber, and a fourth chamber for heating the substrate loaded in the first chamber to perform a thermal process; a fifth chamber cooling the substrate thermally treated in the fourth chamber,
the substrate in the fifth chamber is transferred to the first chamber, cooled, and then unloaded.
CN202011034094.6A 2019-10-08 2020-09-27 Substrate processing apparatus Pending CN112635353A (en)

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KR1020190124825A KR102295249B1 (en) 2019-10-08 2019-10-08 Substrate processing apparatus
KR10-2019-0124825 2019-10-08

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2920454B2 (en) * 1993-06-10 1999-07-19 東京エレクトロン株式会社 Processing equipment
JP2003224105A (en) * 2002-01-29 2003-08-08 Shibaura Mechatronics Corp Substrate drying equipment
KR20060119088A (en) * 2005-05-18 2006-11-24 삼성전자주식회사 An apparatus for handling a substrate and method using the apparatus
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TW201935610A (en) * 2018-02-15 2019-09-01 美商應用材料股份有限公司 Apparatus for handling various sized substrates

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TW202115825A (en) 2021-04-16
KR102295249B1 (en) 2021-08-30
KR20210041960A (en) 2021-04-16

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