KR102166269B1 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention rapidly processes the heat treatment process of the substrate and smoothly removes air bubbles remaining in the bonding material filled in the space between the semiconductor chips stacked up and down on the wafer, thereby improving the reliability of the heat treatment process. An object thereof is to provide an apparatus and a substrate processing method.
The substrate processing apparatus 1 of the present invention for implementing this includes: a chamber housing 100 in which an internal space for processing a substrate is formed; A door 110 for opening and closing the chamber housing 100; At least three stages in which a substrate having a plurality of semiconductor chips stacked up and down on the wafer is stacked, and heat treatment and cooling treatment are sequentially performed; Transfer means for sequentially transferring the substrate to the at least three stages; During the substrate processing, the internal space of the chamber housing 100 is pressurized to a set process pressure so that bubbles remaining in the bonding material filled in the space between the upper and lower stacked semiconductor chips are removed, and the substrate treatment is performed. Upon completion and unloading, a pressure control unit 170 for depressurizing the internal space of the chamber housing 100 to a normal pressure state is included.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of improving substrate processing speed and reliability of substrate processing.

In general, semiconductors are manufactured by sequentially performing a series of unit processes for forming a film, forming a pattern, and forming a metal wiring.

As a post-process in the semiconductor manufacturing process, the reflow process is a process for manufacturing a multi-chip package, and the multi-chip package undergoes a redistribution process to form a rewiring connected to the chip pad to the edge of the chip. And a plurality of semiconductor chips having a conductive metal layer vertically penetrating the redistribution are vertically stacked by solder bumps, and the upper and lower semiconductor chips are located in the space between the upper and lower stacked semiconductor chips. A bonding material made of an insulating material is filled in order to fix and support the chip so that it does not shake, and the lowermost semiconductor chip has a structure attached to the wafer, and a solder ball is formed on the opposite side of the chip attaching surface of the wafer to serve as an external connection terminal. Used.

Further, on the wafer, a plurality of semiconductor chips stacked up and down as described above may be formed at predetermined intervals.

As described above, a plurality of semiconductor chips stacked up and down on a wafer and a substrate in which a plurality of semiconductor chips are formed on the wafer at predetermined intervals are heat treated in a process chamber to perform a reflow process.

In this way, a conventional substrate processing apparatus used in a reflow process for manufacturing a multi-chip package by electrically connecting a plurality of semiconductor chips on a wafer remains in the bonding material filled in the space between the semiconductor chips stacked up and down. There is a problem in that the configuration for smoothly removing the air bubbles is insufficient.

In addition, in the heat treatment of the reflow process, the wafer and a plurality of semiconductor chips formed thereon (hereinafter, referred to as'substrate') are loaded into the process chamber to sequentially perform heat treatment and cooling treatment. Since the processing apparatus is configured to process a substrate in a single sheet unit in a process chamber, it takes a lot of time to process the substrate, resulting in a low manufacturing yield.

In addition, a conventional general substrate processing apparatus includes a clamping means in a configuration for fixing and supporting the substrate by pressing on the stage after transferring the substrate between the stage in which the substrate is heated and the stage where the substrate is cooled in the process chamber. do. During the heat treatment of the substrate, deformation caused by heat transferred to the substrate causes the edge of the substrate to bend. In this case, the surface of the substrate is not in contact with the surface of the stage that transfers heat as a whole, resulting in uneven heat transfer, resulting in poor processing. The clamping means has a function of uniformly transferring heat to the entire surface of the substrate by pressing the edge portion of the substrate in close contact with the upper surface of the stage.

Conventional clamping means have a problem in that when the pressing force acting on the substrate is greater than the set pressing force, the means for absorbing it is insufficient, and thus the substrate is damaged and damaged, resulting in a process failure.

In addition, it is difficult to precisely control the clamping means so that the set pressing force acts, and if a force smaller than the set pressing force acts on the substrate, the bending of the substrate cannot be suppressed during the substrate processing process, resulting in process failure due to uneven heat transfer. There is a problem that can be.

As a prior art related to a substrate processing apparatus, a substrate processing apparatus in which a reflow process is performed is disclosed in Korean Patent No. 10-1406172.

The present invention has been conceived to solve the above-described problems, speedily processing the heat treatment process of the substrate and smoothly removing air bubbles remaining in the bonding material filled in the space between the semiconductor chips stacked up and down on the wafer. Accordingly, an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of improving the reliability of a heat treatment process.

Another object of the present invention is to stably transfer and support a substrate between a plurality of stages in which substrate processing is performed, thereby preventing the warpage of the substrate, resulting in uniform heat transfer, preventing process defects of the substrate, and improving the reliability of the substrate processing process. It is to provide a substrate processing apparatus and a substrate processing method that can be improved.

The substrate processing apparatus 1 of the present invention for realizing the above-described object includes: a chamber housing 100 having an inner space for processing a substrate; A door 110 for opening and closing the chamber housing 100; At least three stages in which a substrate having a plurality of semiconductor chips stacked up and down on the wafer is stacked, and heat treatment and cooling treatment are sequentially performed; Transfer means for sequentially transferring the substrate to the at least three stages; During the substrate processing, the internal space of the chamber housing 100 is pressurized to a set process pressure so that bubbles remaining in the bonding material filled in the space between the upper and lower stacked semiconductor chips are removed, and the substrate treatment is performed. When unloading after completion, the chamber housing 100 includes a pressure adjusting unit 170 for reducing pressure to a normal pressure state, wherein the stage is disposed at regular intervals along the circumferential direction, and the transfer means, Consisting of a turn table 300 that is rotated to transfer the substrate between the stages, the turn table 300 is integrally provided with a clamping means 400 for pressing the substrate to be fixed on the stage, the The turn table 300 and the clamping means 400 are characterized in that they move together.

The stage includes a cooling stage 210 that cools a heat-treated substrate while the substrate is loaded, a first heating stage 220 that heats the substrate to a first set temperature, and the substrate is heated to the first set temperature. The second heating stage 230 may be heated to a higher second set temperature.

An upper heater 240 may be provided on the upper side of the second heating stage 230 so as to be elevated.

The substrate loaded into the cooling stage 210 is transferred from the cooling stage 210 to the first heating stage 220 by the transfer means and subjected to primary heat treatment, and when the primary heat treatment is completed, the It is transferred from the first heating stage 220 to the second heating stage 230 by a transfer means and subjected to secondary heat treatment, and when the secondary heating process is completed, the second heating stage 230 is transferred by the transfer means. ) To the cooling stage 210 may be configured to be unloaded after cooling.

The inner space 100a of the chamber housing 100 is formed so that the cooling stage 210 and the first heating stage 220 and the second heating stage 230 communicate with each other, and the inner space of the chamber housing 100 A blower heater 260 for supplying and circulating hot air to (100a) may be further included.

The stage includes a first cooling stage 510 for cooling a heat-treated substrate on which the substrate is loaded, a second cooling stage 520 provided on one side of the first cooling stage 510, and the substrate. A first heating stage 530 for heating to a first set temperature, and a second heating stage 540 for heating the substrate to a second set temperature higher than the first set temperature.

An upper heater 240 may be provided above the second heating stage 540 so as to be able to move up and down.

In the stage, two substrates can be processed simultaneously.

When the first substrate is loaded into the first cooling stage 510, the first substrate is transferred to the second cooling stage 520 by the transfer means, and the second substrate is transferred to the first cooling stage 510. And when the second substrate is loaded into the first cooling stage 510, the first substrate is transferred from the second cooling stage 520 to the first heating stage 530 by the transfer means. The second substrate is transferred from the first cooling stage 510 to the second cooling stage 520 at the same time that the first substrate is heated, and when the first heat treatment of the first substrate is completed, the first substrate Is transferred from the first heating stage 530 to the second heating stage 540 by the transfer means, and is subjected to secondary heat treatment, and the second substrate is transferred to the second cooling stage 520 by the transfer means. Is transferred to the first heating stage 530 from the first heating stage, and when the secondary heat treatment of the first substrate and the primary heat treatment of the second substrate are completed, the first substrate is transferred to the transfer means. As a result, the second substrate is transferred from the second heating stage 540 to the first cooling stage 510 to be cooled, and the second substrate is transferred from the first heating stage 530 to the second heating stage ( 540) is transferred to the second heat treatment, and when the cooling treatment of the first substrate and the second heat treatment of the second substrate are completed, the first substrate is transferred to the first cooling stage 510 by the transfer means. The second substrate is transferred from the second heating stage 540 to the first cooling stage 510 by the transfer means to be cooled and processed while being transferred to the second cooling stage 520. When the cooling process of the second substrate is completed, the second substrate is unloaded, and when the second substrate is unloaded, the first substrate is transferred from the second cooling stage 520 to the first substrate by the transfer means. It may be configured to be unloaded after being transferred to the cooling stage 510.

The inner space 100a of the chamber housing 100 is so that the first cooling stage 510 and the second cooling stage 520 and the first heating stage 530 and the second heating stage 540 communicate with each other. It is formed, and may further include a blower heater 260 for supplying and circulating hot air to the inner space 100a of the chamber housing 100.

delete

It may further include an elevating and rotating driver 350 for elevating and rotating the turn table 300.

The elevating and rotating driving unit 350 includes a rotation shaft 340 serving as a rotation center of the turn table 300 and an elevation support 353 coupled to the rotation shaft 340 and supporting the rotation shaft 340 so as to be rotatable. ), a cylinder 351 for lifting and lowering the lifting support 353, and a motor 354 which is coupled to the rotation shaft 340 and rotates the turntable 300.

Holes 300a through which the stage passes vertically are formed in the turn table 300, and a plurality of support pins for supporting the substrate in the turn table 300 positioned at the edge of the hole 300a 320 may be formed at regular intervals along the circumferential direction.

delete

The clamping means 400 includes a clamp ring 410 for pressing an edge portion of a substrate mounted on the stage, a clamp guide 420 supporting an edge portion of the clamp ring 410, and the turn table ( 300) and a bracket 430 provided to extend upwardly, and an elastic member 440 provided on the inside of the bracket 430 to elastically support the clamp guide 420 in a direction toward the substrate Can be.

A stopper 330 may be further provided on the turn table 300 to support the clamp guide 420 when the turn table 300 is moved upward.

When the turntable 300 moves downward, when the substrate is pressed against the upper surface of the stage by the clamp ring 410, the clamp guide 420 and the stopper 300 are spaced apart, and the elastic member 440 ) May be configured such that both side ends are supported by the bracket 430 and the clamp guide 420 and are compressed and deformed.

In one embodiment, in the stage, one substrate is heat treated, and the clamping means 400 may be provided in one place of the turn table 300.

In another embodiment, in the stage, two substrates are heat-treated at the same time, and the clamping means 400 may be provided in two places of the turn table 300.

The pressure control unit 170 includes an air supply port 140 for pressurizing the internal space of the chamber housing 100 to a set process pressure, and for reducing the internal space of the chamber housing 100 to a normal pressure state. It may be configured to include an exhaust port 150 and a vacuum port 160 for reducing the internal space of the chamber housing 100 to a vacuum pressure state.

When the internal space of the chamber housing 100 is pressurized to a set process pressure, the pressure control unit 170 may pressurize the process pressure in a normal pressure state.

When the internal space of the chamber housing 100 is pressurized to a set process pressure, the pressure control unit 170 may pressurize to the process pressure after reducing the pressure in a vacuum state.

A substrate processing method according to an embodiment of the present invention includes the steps of opening a door 110 of a chamber housing 100 and loading a substrate into the cooling stage 210; Sealing the door 110 and pressing the inner space of the chamber housing 100 to a set process pressure state; Transferring the substrate from the cooling stage 210 to the first heating stage 220 and performing primary heat treatment at a first set temperature; Transferring the substrate from the first heating stage 220 to a second heating stage 230 and performing secondary heat treatment at a second set temperature higher than the first set temperature; Transferring the substrate from the second heating stage 230 to the cooling stage 210 for cooling; Depressurizing the internal space of the chamber housing 100 to become a normal pressure state; And opening the door 110 of the chamber housing 100 and unloading the substrate.

A substrate processing method according to another embodiment of the present invention includes the steps of opening a door 110 of a chamber housing 100 and loading a first substrate into the first cooling stage 510; Loading the second substrate to the first cooling stage 510 while transferring the first substrate to the second cooling stage 520; Sealing the door 110 and pressing the inner space of the chamber housing 100 to a set process pressure state; The first substrate is transferred from the second cooling stage 520 to the first heating stage 530 and subjected to primary heat treatment at a first set temperature, and the second substrate is transferred from the first cooling stage 510. Transferring to the second cooling stage 520; When the first heat treatment of the first substrate is completed, the first substrate is transferred from the first heating stage 530 to the second heating stage 540 to a second set temperature higher than the first set temperature. Performing primary heat treatment at the first set temperature by transferring the second substrate from the second cooling stage 520 to the first heating stage 530 while performing primary heat treatment; When the secondary heat treatment of the first substrate and the primary heat treatment of the second substrate are completed, the first substrate is transferred from the second heating stage 540 to the first cooling stage 510 for cooling treatment. At the same time, transferring the second substrate from the first heating stage 530 to the second heating stage 540 and performing secondary heat treatment at the second set temperature; When the cooling treatment of the first substrate and the secondary heating treatment of the second substrate are completed, the first substrate is transferred from the first cooling stage 510 to the second cooling stage 520 and at the same time the second Transferring a substrate from the second heating stage 540 to the first cooling stage 510 for cooling; When the cooling process of the second substrate is completed, depressurizing the internal space of the chamber housing 100 to a normal pressure state, and then unloading the second substrate; And when the second substrate is unloaded, unloading the first substrate after transferring the first substrate from the second cooling stage 520 to the first cooling stage 510.

According to the substrate processing apparatus and the substrate processing method according to the present invention, the heating and cooling processing of the substrate is sequentially performed in at least three stages continuously arranged in a state where the internal space of the chamber housing is pressed at a set process pressure. , By quickly processing the heat treatment process of the substrate and effectively removing the air bubbles remaining in the bonding material filled between the semiconductor chips stacked up and down on the wafer, it can prevent process defects of the substrate and improve the reliability of the substrate processing process. have.

In addition, in configuring the heating stage in which the heat treatment of the substrate is performed, the substrate comprises a first heating stage that heats to a first set temperature and a second heating stage that heats to a second set temperature higher than the first set temperature. By gradually increasing the heating temperature of the substrate, thermal damage to the substrate can be prevented, and the heat treatment of the substrate can be stably performed.

In addition, the upper side of the second heating stage may be additionally provided with an upper heater that can be raised and lowered, so that the lower and upper surfaces of the substrate loaded on the second heating stage can be heated at the same time, thereby further improving the heat treatment performance of the substrate.

In addition, in configuring the stage on which the substrate processing is performed, the first cooling stage, the second cooling stage, the first heating stage, and the second heating stage are arranged to be arranged at regular intervals along the circumferential direction, so that two different stages Each substrate can be processed at the same time, thereby improving the substrate processing speed.

In addition, in configuring the clamping means for pressing and fixing the substrate seated on the upper surface of the stage, the pressing force of the clamp ring is absorbed and buffered by the elastic member so that the pressing force of the clamp ring does not act excessively on the substrate, thereby damaging the substrate. In addition to preventing damage in advance, it is possible to stably transfer heat to the substrate by suppressing warpage of the substrate.

In addition, it is equipped with a turntable that lifts and rotates to transfer substrates between stages, and by integrally configuring the clamping means on the turntable, it is possible to reduce the installation location of the clamping means, thereby transferring and fixing substrates between stages. The configuration of can be simplified.

In addition, when the pressure in the interior space of the chamber housing is reduced to a vacuum state and then pressurized to become a process pressure state, the pressure change in the interior space of the chamber housing can be increased, thereby more effectively removing air bubbles remaining inside the substrate. It is possible to prevent defects in the process and further improve the reliability of the heat treatment process.

1 is an exterior perspective view of a substrate processing apparatus according to the present invention,
2 is a longitudinal cross-sectional view showing the configuration of a lifting and rotation driving unit of a turn table provided in the substrate processing apparatus according to the first embodiment of the present invention;
3 is a plan cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention;
4 is a view showing a coupling structure between a turn table and a turn table ring provided in the substrate processing apparatus according to the present invention;
5 is a plan view showing a state in which a substrate seated on a stage is supported by a clamping means in the substrate processing apparatus according to the present invention;
6 is a side view showing a state in which the substrate is moved upwardly to the upper side of the stage in the substrate processing apparatus according to the present invention;
7 is a side view showing a state in which a substrate is seated on a stage and pressed and supported by a clamping means in the substrate processing apparatus according to the present invention;
8 is a flowchart of a substrate processing method according to a first embodiment of the present invention;
9 is a view showing a state in which the door is opened and the substrate is loaded onto the cooling stage inside the chamber housing;
10 is a view showing a state in which a substrate is transferred from a cooling stage to a first heating stage and subjected to primary heat treatment after the door is closed and the inside of the chamber housing is pressurized;
11 is a diagram showing a state in which a substrate is transferred from a first heating stage to a second heating stage and subjected to a secondary heating treatment;
FIG. 12 is a view showing a state in which a door is opened while a substrate is transferred from a second heating stage to a cooling stage and is subjected to cooling treatment, and then a door is opened and the substrate is unloaded to the outside of the chamber housing.
13 is a plan view of a substrate processing apparatus according to a second embodiment of the present invention;
14 is a flowchart of a substrate processing method according to a second embodiment of the present invention;
15 is a view showing a state in which the door is opened and the first substrate is loaded on the first cooling stage inside the chamber housing;
16 is a view showing a state in which a first substrate is transferred from a first cooling stage to a second cooling stage, and a second substrate is loaded into the first cooling stage;
17 shows that after the door is closed and the inside of the chamber housing is pressurized, the first substrate is transferred from the second cooling stage to the first heating stage and subjected to primary heat treatment, and the second substrate is transferred from the first cooling stage to the second cooling stage. A drawing showing the transfer,
FIG. 18 is a diagram showing a state in which a first substrate is transferred from a first heating stage to a second heating stage and subjected to secondary heat treatment, and a second substrate is transferred from a second cooling stage to a first heating stage and subjected to primary heat treatment. ,
FIG. 19 is a view showing a state in which a first substrate is transferred from a second heating stage to a first cooling stage for cooling, and a second substrate is transferred from the first heating stage to a second heating stage and subjected to secondary heating treatment.
FIG. 20 shows that after the first substrate is transferred from the first cooling stage to the second cooling stage, the second substrate is transferred from the second heating stage to the first cooling stage and cooled, the interior of the chamber housing is decompressed to normal pressure. A diagram showing a state in which the door is opened and the second substrate is unloaded to the outside of the chamber housing,
21 is a view showing a state in which the first substrate is unloaded to the outside of the chamber housing after being transferred from the second cooling stage to the first cooling stage.

Hereinafter, the configuration and operation of a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. 1 to 7, the substrate processing apparatus 1 of the present invention is an apparatus for performing a reflow process, and includes a chamber housing 100 having an internal space 100a for processing a substrate, A door 110 for opening and closing an opening 100b (see FIG. 3) formed on one side of the chamber housing 100 is provided.

The door 110 is moved up and down by the door driving unit 120, and when the door 110 is moved upward, the opening 100b is closed so that the inner space 100a of the chamber housing 100 is closed, When the door 110 moves downward, the opening 100b is opened so that the inner space 100a of the chamber housing 100 is in communication with the outside of the chamber housing 100.

When the heat treatment target substrate W is loaded from the outside of the chamber housing 100 to the inside or is unloaded from the inside of the chamber housing 100 to the outside, the door 110 opens the opening 100b so that the substrate is The door 110 closes the opening 100b during the substrate processing process so that the internal space 100a of the chamber housing 100 maintains a set process pressure and temperature. Loading and unloading of the substrate W may be performed by a transfer robot (not shown).

A support frame 130 may be provided below the chamber housing 100 to secure a movable space for the door 110 to be moved up and down by supporting the chamber housing 100 at a position spaced upward on the ground. .

The substrate processing apparatus 1 of the present invention includes at least three stages in which a substrate on which a plurality of semiconductor chips stacked up and down is formed on a wafer is mounted, and the substrate is sequentially subjected to heat treatment and cooling treatment. A plurality of semiconductor chips stacked up and down may be formed on the wafer at predetermined intervals.

In the present specification, the term'substrate' is used to include a wafer, a plurality of semiconductor chips stacked up and down on the wafer, and a configuration in which the plurality of semiconductor chips are formed on the wafer at predetermined intervals.

2 and 3, in the case of the substrate processing apparatus 1 according to an embodiment of the present invention, the stage includes a cooling stage 210 for cooling a heat-treated substrate with a substrate loaded, and the substrate. It may include a first heating stage 220 for heating to a first set temperature, and a second heating stage 230 for heating the substrate to a second set temperature higher than the first set temperature. The cooling stage 210, the first heating stage 220, and the second heating stage 230 may be disposed at predetermined angular intervals in the circumferential direction.

The cooling stage 210 is provided at a position adjacent to the door 110 so that the substrate loaded from the outside of the chamber housing 100 to the inside is loaded, and the substrate is unloaded from the inside of the chamber housing 100 to the outside. In addition to functioning as a loaded stage, it functions as a stage for cooling the substrates heated by the first heating stage 220 and the second heating stage 230. Cooling means (not shown) having various structures for rapidly cooling the substrate may be provided inside the cooling stage 210.

The first heating stage 220 first heats the substrate at a first set temperature of 100 to 200°C, and the second heating stage 230 takes over the first heat-treated substrate to a second set temperature. It is subjected to secondary heat treatment at 200~400℃. In configuring the heating stage in which the heat treatment of the substrate is performed as described above, the first heating stage 220 for heating to a first set temperature and a second heating stage for heating to a second set temperature higher than the first set temperature ( 230) to increase the heating temperature of the substrate step by step, thereby preventing thermal damage due to the rapid temperature increase of the substrate, thereby stably performing the heating treatment of the substrate.

In addition, an upper heater 240 may be provided on the upper side of the second heating stage 230 so as to be elevated. A servo motor 250 for lifting and driving the upper heater 240 is provided above the chamber housing 100. When the upper heater 240 is lowered while the substrate is loaded on the second heating stage 230, the spaced apart distance between the upper heater 240 and the substrate is narrowed, thereby increasing the heating temperature of the substrate, When the upper heater 240 is raised, the spaced apart distance between the upper heater 240 and the substrate increases, so that the heating temperature of the substrate may be relatively lowered. As described above, as the upper heater 240 is additionally provided on the upper side of the second heating stage 230, not only the bottom surface but also the upper surface of the substrate can be heated simultaneously, thereby further improving the heat treatment performance of the substrate.

On the other hand, the substrate processing apparatus 1 of the present invention pressurizes the internal space 100a of the chamber housing 100 to a set process pressure during substrate processing, and when unloading after the substrate processing is completed, the chamber housing ( The internal space 100a of 100) includes a pressure control unit 170 for decompressing to be in an atmospheric pressure (atmospheric pressure) state.

Here, the reason why the internal space (100a) of the chamber housing 100 is pressurized to become a high-pressure process pressure state during processing of the substrate is that in the case of heat treatment of a substrate having a plurality of semiconductor chips stacked up and down on a wafer, Bubbles remaining in the bonding material to be filled in the space between the semiconductor chips to be stacked with the upper and lower semiconductor chips to be fixed so as not to be shaken are removed from the internal space 100a of the chamber housing 100. It is to remove smoothly by high pressure atmosphere.

The pressure control unit 170, an air supply port 140 for pressurizing the internal space 100a of the chamber housing 100 to a set process pressure, and the internal space of the chamber housing 100 to a normal pressure state. It may be configured to include an exhaust port 150 for decompressing, and a vacuum port 160 for depressurizing the internal space of the chamber housing 100 to a vacuum pressure state. For example, when processing a substrate in a reflow process, the process pressure may be set to 10 kgf/cm 2 or more, and the vacuum pressure may be set to 1 torr or less.

In one embodiment, when the internal space of the chamber housing 100 is pressurized to a set process pressure, the pressure control unit 170 may pressurize to be the process pressure in a normal pressure state.

In another embodiment, when the internal space 100a of the chamber housing 100 is pressurized to a set process pressure, the pressure control unit 170 firstly reduces the pressure to a vacuum state and then secondarily becomes the process pressure. You can pressurize. In this way, when the pressure in the internal space 100a of the chamber housing 100 is reduced to a vacuum state and then pressurized to become a process pressure state, compared to the case of pressurizing to become a process pressure at normal pressure, the chamber housing 100 ), the difference in pressure change in the internal space 100a can be further increased, so that air bubbles remaining in the bonding material can be more effectively removed.

3, the inner space 100a of the chamber housing 100 is formed so that the cooling stage 210 and the first heating stage 220 and the second heating stage 230 are in communication, and the chamber housing A blower heater 260 for supplying and circulating hot air to the inner space 100a of 100 may be further included. The blower heater 260 is driven by a fan motor 270, and a filter 280 for filtering foreign substances may be provided on a passage through which hot air is circulated. In this way, hot air is circulated and supplied to the inner space 100a of the chamber housing 100 so that the first heating stage 220 and the second heating stage 230 can heat the substrate more quickly.

Meanwhile, referring to FIGS. 4 to 7, the substrate processing apparatus 1 of the present invention includes a transfer means for sequentially transferring a substrate to the at least three stages.

In the present embodiment, the substrate loaded into the cooling stage 210 is transferred from the cooling stage 210 to the first heating stage 220 by the transfer means and subjected to primary heating treatment, and the primary heating When the processing is completed, the transfer unit is transferred from the first heating stage 220 to the second heating stage 230 and subjected to secondary heat treatment. When the second heating treatment is completed, the transfer unit 2 It is configured to be unloaded after being transferred from the heating stage 230 to the cooling stage 210 and subjected to cooling treatment.

The stages are arranged at regular intervals along the circumferential direction, and the transfer means may be constituted by a turn table 300 that is rotated to transfer the substrate between the stages. That is, the positions of the cooling stage 210, the first heating stage 220, and the second heating stage 230 are fixed, and the turntable 300 uses the substrate loaded on the cooling stage 210 as a first Transferred to the heating stage 220, transfer the substrate first heat-treated in the first heating stage 220 to the second heating stage 230, and the second heating-treated in the second heating stage 230 It functions to transfer the substrate to the cooling stage 210.

2 and 4, a hole 300a through which the stages 210, 220, and 230 pass vertically is formed in the turn table 300, and a turn table ring 310 is formed at the edge of the hole 300a. Can be combined. The turn table ring 310 functions to integrally couple the clamping means 400 to be described later to the turn table 300 and supports the substrate when the turn table 300 is moved up and down and rotated.

The turntable 300 may be lifted and rotated when the substrate is transferred between the stages 210, 220 and 230 by the lift and rotation driving unit 350. That is, when transferring the substrate between the stages 210, 220, 230, the substrate is lifted to the upper side of the stage by the upward movement of the turn table 300, and is rotated to the upper side of the adjacent stage by the rotation of the turn table 300. , It is loaded on the adjacent stage by the downward movement of the turn table 300.

The elevating and rotating driving unit 350 includes a rotation shaft 340 serving as a rotation center of the turn table 300 and an elevation support 353 coupled to the rotation shaft 340 and supporting the rotation shaft 340 so as to be rotatable. ), the rod 352 coupled to the lifting support 353, the rod 352 is driven to extend or contract in the vertical direction and the cylinder 351 is fixed in position, and is coupled to the rotation shaft 340 It may be configured to include a motor 354 that rotates and drives the turn table 300 and is raised and lowered by the driving of the cylinder 351. The connection portion between the rotation shaft 340 and the lifting support 353 may be coupled through a bearing 353a. In addition, a plurality of support pins 320 for supporting the substrate may be formed on the turn table 300 positioned at the edge of the hole 300a at predetermined intervals along the circumferential direction. In one embodiment, as shown in FIG. 3, the support pins 320 may be formed in four locations at regular intervals along the circumferential direction to support the substrate.

On the other hand, referring to FIGS. 6 and 7, clamping to prevent the bending of the substrate W due to heat by pressing the edge of the substrate W on the stage 210, 220, 230 in close contact with the turn table 300 Means 400 are provided.

The clamping means 400 includes a clamp ring 410 for pressing the edge of the substrate W mounted on the stage 210, 220, 230, and a clamp guide 420 supporting the edge of the clamp ring 410 And, a bracket 430 provided to extend upward on the turntable 300, and an elasticity provided on the inside of the bracket 430 to elastically support the clamp guide 420 in a direction toward the substrate (W) It may be configured to include the member 440. In addition, a stopper 330 may be provided on the turn table 300 to protrude upward to support the clamp guide 420 when the turn table 300 is moved upward.

As shown in FIG. 6, when the turntable 300 is moved upward, the substrate W seated on the upper surfaces of the stages 210, 220 and 230 is supported by the support pins 320 and from the upper surfaces of the stages 210, 220 and 230. It is lifted upward, at this time, the clamp guide 420 is supported by the stopper 330 and lifted upward. That is, when the turntable 300 moves upward, the substrate W and the clamping means 400 move upward together.

As shown in FIG. 7, when the turntable 300 moves downward, when the substrate W is pressed against the upper surface of the stages 210, 220, 230 by the clamp ring 410, the clamp guide 420 and the The stopper 330 is vertically spaced, and both ends of the elastic member 440 are supported by the bracket 430 and the clamp guide 420 and are compressed and deformed.

In the case of clamping the substrate W by the downward movement of the turn table 300 as described above, the pressing force of the clamp ring 410 may be buffered by the elastic member 440 so that the pressing force of the clamp ring 410 does not act excessively on the substrate W. By configuring so that it is possible to prevent damage and breakage of the substrate W.

In addition, by providing a turntable 300 that lifts and rotates to transfer a substrate between the stages 210, 220, 230, and integrally configuring the clamping means 400 on the turn table 300, the substrate W between the stages 210, 220, 230 ) It is possible to simplify the configuration of the device for transporting and fixing support. In one embodiment, in the stage, one substrate is heat treated (refer to FIGS. 9 to 12 ), and the clamping means 400 may be provided in one place of the turn table 300. In another embodiment, in the stage, two substrates are heat-treated at the same time (see FIGS. 15 to 21 ), and the clamping means 400 may be provided in two places of the turn table 300. In this way, the clamping means 400 is integrally configured with the turn table 300 so that the turn table 300 and the clamping means 400 move together, so that even if a separate clamping means is not provided for each stage, clamping of the substrate is performed. Because it is possible, it is possible to simplify the configuration of an apparatus for transferring and fixing the substrate W between the stages 210, 220, and 230.

Hereinafter, a substrate processing method in the substrate processing apparatus 1 according to an embodiment of the present invention described above will be described with reference to FIGS. 8 to 13.

In the substrate processing method according to an embodiment of the present invention, first, the door 110 of the chamber housing 100 is opened, and the substrate W is loaded into the cooling stage 210 (S101, FIG. 9).

When the substrate W is loaded on the cooling stage 210, the door 110 is sealed, and the internal space 100a of the chamber housing 100 is supplied with the pressure control unit 170 to be in a set process pressure state. Pressurized by the action (S102).

In this case, the pressure control unit 170 may pressurize the internal space 100a of the chamber housing 100 to be the process pressure in a normal pressure state, or pressurize it to become the process pressure after reducing the pressure in a vacuum state. Then, the blower heater 260 is operated by driving the fan motor 270 to circulate hot air in the inner space 100a of the chamber housing 100.

When the inner space 100a of the chamber housing 100 is pressed under a process pressure, the substrate W is moved from the cooling stage 210 to the first heating stage ( 220) and subjected to primary heat treatment at a first set temperature (S103, FIG. 10).

When the primary heat treatment of the substrate W is completed, the substrate W is transferred from the first heating stage 220 to the second heating stage 230 by the turn table 300 to be lower than the first set temperature. The secondary heat treatment is performed at a high second set temperature (S104, FIG. 11). At this time, heat is applied to the upper surface of the substrate W by the upper heater 240 to perform heat treatment.

When the secondary heat treatment of the substrate W is completed, the substrate W is transferred from the second heating stage 230 to the cooling stage 210 by the turn table 300 to perform cooling treatment (S105, FIG. 12).

When the cooling process of the substrate W is completed, the internal space 100a of the chamber housing 100 is depressurized to a normal pressure state by the exhaust action of the pressure control unit 170 (S106). This may be caused by a sudden change in the pressure of the inner space 100a of the chamber housing 100 when the inner space 100a of the chamber housing 100 immediately opens the door 110 in a high-pressure process pressure state. In order to prevent damage to the existing substrate, before opening the door 110, the pressure is adjusted so that the internal space 100a of the chamber housing 100 is at a pressure level equal to the normal pressure outside the chamber housing 100. to be.

When the internal space 100a of the chamber housing 100 is depressurized to the normal pressure state, the door 110 is opened and the substrate W is unloaded (S107).

Hereinafter, a configuration of a substrate processing apparatus according to another embodiment of the present invention will be described, but redundant descriptions are omitted for the same configuration as the substrate processing apparatus 1 according to the above-described embodiment, and focus on the replaced configuration. Explain.

The substrate processing apparatus according to the present embodiment differs in the arrangement structure of the stage in the above-described embodiment, and other configurations may be configured in the same manner as in the above-described embodiment. In addition, in the above-described embodiment, one substrate W is processed in only one of the plurality of stages, but in this embodiment, two substrates W1 and W2 are formed in two stages of the plurality of stages. The difference is that it is configured to be processed simultaneously.

The stages 510, 520, 530, and 540 of this embodiment include a first cooling stage 510 for cooling a heat-treated substrate while the substrates W1 and W2 are loaded, and a second cooling provided at one side of the first cooling stage 510 A stage 520, a first heating stage 530 for heating the substrate to a first set temperature, and a second heating stage 540 for heating the substrate to a second set temperature higher than the first set temperature. In addition, an upper heater 240 is provided above the second heating stage 540 so as to be able to move up and down.

The inner space 100a of the chamber housing 100 is formed so that the first cooling stage 510 and the second cooling stage 520 and the first heating stage 530 and the second heating stage 540 communicate with each other, A blower heater 260 for supplying and circulating hot air to the inner space 100a of the chamber housing 100 may be further included.

Other configurations may be configured in the same manner as in the above-described embodiment.

Hereinafter, a substrate processing method in the substrate processing apparatus according to another embodiment of the present invention will be described with reference to FIGS. 14 to 21.

In the substrate processing method according to another embodiment of the present invention, first, the door 110 of the chamber housing 100 is opened, and the first substrate W1 is loaded into the first cooling stage 510 (S201, FIG. 15). ). When the first substrate W1 is loaded into the first cooling stage 510, the first substrate W1 is moved from the first cooling stage 510 to the second by rising, rotating, and descending movements of the turntable 300. At the same time as the transfer to the cooling stage 520, the second substrate W2 is loaded into the first cooling stage 510 (S202, FIG. 16).

When the second substrate W2 is loaded into the first cooling stage 510, the door 110 is sealed, and the pressure control unit 170 closes the inner space 100a of the chamber housing 100 to a set process pressure state. ) Is pressurized by the air supply action (S203).

In this case, the pressure control unit 170 may pressurize the internal space 100a of the chamber housing 100 to be the process pressure in a normal pressure state, or pressurize it to become the process pressure after reducing the pressure in a vacuum state. Then, the blower heater 260 is operated by driving the fan motor 270 to circulate hot air in the inner space 100a of the chamber housing 100.

When the internal space 100a of the chamber housing 100 is pressurized to a process pressure state, the first substrate W1 is transferred from the second cooling stage 520 to the first heating stage 530 by the turn table 300. At the same time, the second substrate W2 is transferred from the first cooling stage 510 to the second cooling stage 520 by the turn table 300 (S204, FIG. 17).

When the primary heating treatment of the first substrate W1 is completed, the first substrate W1 is transferred from the first heating stage 530 to the second heating stage 540 by the turn table 300 to perform secondary heating. At the same time as the heat treatment, the second substrate W2 is transferred from the second cooling stage 520 to the first heating stage 530 by the turn table 300 to perform primary heat treatment (S205, FIG. 18).

When the secondary heat treatment of the first substrate W1 and the primary heat treatment of the second substrate W2 are completed, the first substrate W1 is heated by the turntable 300 to the second heating stage 540. The second substrate W2 is transferred from the first heating stage 530 to the second heating stage 540 by the turntable 300 and transferred to the first cooling stage 510 for cooling. Heat treatment is performed (S206, Fig. 19).

When the cooling treatment of the first substrate W1 and the secondary heat treatment of the second substrate W2 are completed, the first substrate W1 is removed from the first cooling stage 510 by the turntable 300. 2 The second substrate W2 is transferred to the cooling stage 520 for cooling, and at the same time, the second substrate W2 is transferred from the second heating stage 540 to the first cooling stage 510 by the turn table 300 for cooling ( S207, Fig. 20). At this time, the first substrate W1 is cooled in the first cooling stage 510 and the second cooling stage 520, and the number of cooling treatments is limited to one or more times, so the first substrate W1 is cooled twice. Even if processed, it does not affect the substrate processing process.

When the cooling process of the second substrate W2 is completed, the internal space 100a of the chamber housing 100 is depressurized to a normal pressure state by the exhaust action of the pressure control unit 170 (S208).

When the internal space 100a of the chamber housing 100 is depressurized to the normal pressure state, the door 110 is opened and the second substrate W2 is unloaded (S209).

When the second substrate W2 is unloaded, the first substrate W1 is transferred from the second cooling stage 520 to the first cooling stage 510 by the turn table 300 and then unloaded ( S210, Fig. 21). At this time, the turn table 300 is rotated in the direction of a solid arrow (counterclockwise) in FIG. 21 or in the direction of a dotted arrow (clockwise) in FIG. 21 to reduce the first substrate W1 to the second cooling stage 520 ) Can be transferred to the first cooling stage 510.

According to this embodiment, four stages consisting of the first cooling stage 510, the second cooling stage 520, the first heating stage 530, and the second heating stage 540 are arranged at regular intervals along the circumferential direction. Since it is configured to be disposed and the two substrates W1 and W2 can be simultaneously processed in two different stages, the substrate processing speed can be further improved compared to the first implementation described above.

As described above, the present invention is not limited to the above-described embodiments, and modifications are apparent by those of ordinary skill in the art without departing from the technical spirit of the present invention claimed in the claims. It is possible, and such modifications are within the scope of the present invention.

1: substrate processing apparatus 100: chamber housing
100a: inner space 100b: opening
110: door 120: door driving unit
130: support frame 140: air supply port
150: exhaust port 160: vacuum port
170: pressure control unit 210: cooling stage
220: first heating stage 230: second heating stage
240: upper heater 250: servo motor
260: blower heater 270: fan motor
280: filter 300: turn table
300a: hole 310: turntable ring
320: support pin 330: stopper
340: rotating shaft 350: lifting and rotating drive unit
351: cylinder 352: rod
353: lifting support 353a: bearing
354: motor 400: clamping means
410: clamp ring 420: clamp guide
430: bracket 440: elastic member
510: first cooling stage 520: second cooling stage
530: first heating stage 540: second heating stage
W: substrate W1: first substrate
W2: second substrate

Claims (25)

A chamber housing 100 in which an internal space for processing a substrate is formed;
A door 110 for opening and closing the chamber housing 100;
At least three stages in which a substrate having a plurality of semiconductor chips stacked up and down on the wafer is stacked, and heat treatment and cooling treatment are sequentially performed;
Transfer means for sequentially transferring the substrate to the at least three stages;
During the substrate processing, the internal space of the chamber housing 100 is pressurized to a set process pressure so that bubbles remaining in the bonding material filled in the space between the upper and lower stacked semiconductor chips are removed, and the substrate treatment is performed. When unloading after completion, a pressure adjusting unit 170 for decompressing the internal space of the chamber housing 100 to a normal pressure state;
Including,
The stages are arranged at regular intervals along the circumferential direction,
The transfer means is made of a turn table 300 rotated to transfer the substrate between the stages,
The turn table 300 is integrally provided with a clamping means 400 for pressing the substrate to be fixed on the stage, and the turn table 300 and the clamping means 400 move together. A substrate processing device. The method of claim 1,
The stage includes a cooling stage 210 that cools a heat-treated substrate while the substrate is loaded, a first heating stage 220 that heats the substrate to a first set temperature, and the substrate is heated to the first set temperature. A substrate processing apparatus comprising a second heating stage 230 for heating to a higher second set temperature. The method of claim 2,
The substrate processing apparatus, characterized in that the upper heater 240 is provided on the upper side of the second heating stage 230 so as to be able to move up and down. The method of claim 2,
The substrate loaded into the cooling stage 210 is transferred from the cooling stage 210 to the first heating stage 220 by the transfer means and subjected to primary heat treatment, and when the primary heat treatment is completed, the It is transferred from the first heating stage 220 to the second heating stage 230 by a transfer means and subjected to secondary heat treatment, and when the secondary heating process is completed, the second heating stage 230 is transferred by the transfer means. ) To the cooling stage 210, cooled, and then unloaded. The method of claim 2,
The inner space 100a of the chamber housing 100 is formed so that the cooling stage 210 and the first heating stage 220 and the second heating stage 230 communicate with each other,
And a blower heater (260) for supplying and circulating hot air to the inner space (100a) of the chamber housing (100). The method of claim 1,
The stage includes a first cooling stage 510 for cooling a heat-treated substrate on which the substrate is loaded, a second cooling stage 520 provided on one side of the first cooling stage 510, and the substrate. A substrate processing apparatus comprising: a first heating stage (530) for heating the substrate to a first set temperature, and a second heating stage (540) for heating the substrate to a second set temperature higher than the first set temperature. The method of claim 6,
The substrate processing apparatus, characterized in that the upper heater 240 is provided on the upper side of the second heating stage 540 so as to be able to move up and down. The method of claim 6,
The substrate processing apparatus, characterized in that in the stage, two substrates are processed simultaneously. The method of claim 8,
When the first substrate is loaded into the first cooling stage 510, the first substrate is transferred to the second cooling stage 520 by the transfer means, and the second substrate is transferred to the first cooling stage 510. Loaded with
When the second substrate is loaded into the first cooling stage 510, the first substrate is transferred from the second cooling stage 520 to the first heating stage 530 by the transfer means for primary heating. At the same time as being processed, the second substrate is transferred from the first cooling stage 510 to the second cooling stage 520,
When the first heat treatment of the first substrate is completed, the first substrate is transferred from the first heating stage 530 to the second heating stage 540 by the transfer means, and is subjected to secondary heat treatment and at the same time The second substrate is transferred from the second cooling stage 520 to the first heating stage 530 by the transfer means and subjected to primary heat treatment,
When the secondary heat treatment of the first substrate and the primary heat treatment of the second substrate are completed, the first substrate is transferred from the second heating stage 540 to the first cooling stage 510 by the transfer means. At the same time, the second substrate is transferred from the first heating stage 530 to the second heating stage 540 by the transfer means and subjected to secondary heating treatment,
When the cooling treatment of the first substrate and the secondary heat treatment of the second substrate are completed, the first substrate is transferred from the first cooling stage 510 to the second cooling stage 520 by the transfer means. At the same time, the second substrate is transferred from the second heating stage 540 to the first cooling stage 510 by the transfer means for cooling treatment,
When the cooling treatment of the second substrate is completed, the second substrate is unloaded,
When the second substrate is unloaded, the first substrate is unloaded after being transferred from the second cooling stage 520 to the first cooling stage 510 by the transfer means. . The method of claim 6,
The inner space 100a of the chamber housing 100 is so that the first cooling stage 510 and the second cooling stage 520 and the first heating stage 530 and the second heating stage 540 communicate with each other. Is formed,
And a blower heater (260) for supplying and circulating hot air to the inner space (100a) of the chamber housing (100). delete The method of claim 1,
A substrate processing apparatus further comprising a lifting and rotation driving unit 350 for lifting and rotating the turn table 300. The method of claim 12,
The elevating and rotating driving unit 350 includes a rotating shaft 340 serving as a rotation center of the turn table 300 and a lifting support 353 coupled to the rotating shaft 340 and supporting the rotating shaft 340 so as to be rotatable. ), a cylinder 351 for lifting and lowering the lifting support 353, and a motor 354 which is coupled to the rotation shaft 340 and rotates the turntable 300. Device. The method of claim 1,
Holes 300a through which the stage passes vertically are formed in the turn table 300, and a plurality of support pins for supporting the substrate in the turn table 300 positioned at the edge of the hole 300a (320) A substrate processing apparatus, characterized in that formed at regular intervals along the circumferential direction. delete The method of claim 1,
The clamping means 400 includes a clamp ring 410 for pressing an edge portion of a substrate mounted on the stage, a clamp guide 420 supporting an edge portion of the clamp ring 410, and the turn table ( 300) comprising a bracket 430 provided to extend upwardly, and an elastic member 440 provided on the inside of the bracket 430 to elastically support the clamp guide 420 in a direction toward the substrate. A substrate processing apparatus, characterized in that. The method of claim 16,
And a stopper 330 protruding upwardly on the turn table 300 to support the clamp guide 420 when the turn table 300 is moved upward. The method of claim 17,
When the turntable 300 moves downward, when the substrate is pressed against the upper surface of the stage by the clamp ring 410, the clamp guide 420 and the stopper 300 are spaced apart, and the elastic member 440 ) Is a substrate processing apparatus, characterized in that both ends are supported by the bracket (430) and the clamp guide (420) and compressively deformed. The method of claim 1,
In the stage, one substrate is heat treated,
The clamping means 400 is a substrate processing apparatus, characterized in that provided in one place of the turn table (300). The method of claim 1,
In the stage, two substrates are heat treated at the same time,
The clamping means (400) is a substrate processing apparatus, characterized in that provided in two places of the turn table (300). The method of claim 1,
The pressure control unit 170 includes an air supply port 140 for pressurizing the internal space of the chamber housing 100 to a set process pressure, and for reducing the internal space of the chamber housing 100 to a normal pressure state. An exhaust port 150, and a vacuum port 160 for depressurizing the internal space of the chamber housing 100 to a vacuum pressure state. The method of claim 1,
When the internal space of the chamber housing 100 is pressurized to a set process pressure, the pressure control unit 170 pressurizes the process pressure in a normal pressure state. The method of claim 1,
When the internal space of the chamber housing 100 is pressurized to a set process pressure, the pressure control unit 170 pressurizes to the process pressure after reducing the pressure to a vacuum state. delete delete

Images