JP7141318B2 - Heating device and heating method - Google Patents

Description

The present invention relates to a heating apparatus and heating method for heating a substrate from below with a hot plate.

2. Description of the Related Art As one of manufacturing processes of semiconductor devices, there is a so-called heat treatment in which a substrate having a rectangular shape is heated from below while being supported in a substantially horizontal posture. With this heat treatment, in recent years, as the size of the substrate increases, the warp of the substrate increases, making it difficult to perform a uniform heat treatment. Therefore, it has been proposed to use the correction technique described in Patent Document 1, for example. In this correction technique, an inclined surface is provided on the peripheral edge of the lower surface of the chamber cover. to correct the warpage of the substrate. By this correction, the distance between the substrate and the bake plate is properly maintained to achieve uniform heating.

JP 2006-339485 A

In the above heat treatment, particles may be generated because the inclined surface provided on the chamber cover and the peripheral edge of the substrate rub against each other when correcting the warpage of the substrate. Therefore, it is difficult to heat the substrate in a clean heating atmosphere.

Also, various parts are built in the effective area of the surface of the substrate. For example, in a semiconductor package manufactured in a manufacturing form such as a wafer level package (WLP: Wafer Level Packaging) or a panel level package (PLP: Panel Level Packaging), a semiconductor chip that can be mounted on the substrate by expanding the effective area on the surface of the substrate. It is desired to increase the number of parts such as. However, in the above-described heating apparatus, the chamber cover is accessed from the surface side of the substrate to correct the warpage of the substrate.

SUMMARY OF THE INVENTION An object of the present invention is to provide a heating apparatus and a heating method capable of satisfactorily heating a substrate without limiting the effective area on the surface of the substrate.

A first aspect of the present invention is a heating apparatus comprising: a hot plate for heating a substrate positioned at a heating position in a face-up state from below; an elevating mechanism for vertically positioning the substrate by elevating it between a standby position higher than the heating position and the heating position; The hot plate has a first through hole penetrating in the vertical direction, and the lifting mechanism includes a lift pin provided so as to be vertically movable through the first through hole, The suction mechanism includes a suction pad attached to the upper end of the lift pin and a first suction hole provided inside the lift pin during heat treatment. and a negative pressure supply unit that applies a negative pressure to the pad to cause the upper end face of the suction pad to adhere to the rear surface of the substrate .
A second aspect of the present invention is a heating apparatus comprising: a hot plate for heating a substrate positioned at a heating position in a face-up state from below; an elevating mechanism for vertically positioning the substrate by elevating it between a standby position higher than the heating position and the heating position; The hot plate has a second through hole penetrating in the vertical direction, and the suction mechanism includes a lifting pin provided to be vertically movable through the second through hole; A suction pad attached to the upper end of the lifting pin, a second driving unit for vertically positioning the suction pad by vertically moving the lifting pin, and a second suction provided inside the lifting pin during heat treatment. and a negative pressure supply unit that applies negative pressure to the suction pad through the hole to cause the upper end surface of the suction pad to adhere to the rear surface of the substrate.
A third aspect of the present invention is a heating apparatus comprising: a hot plate for heating from below a substrate positioned at a heating position in a face-up state with the surface facing upward; an elevating mechanism for vertically positioning the substrate by elevating it between a standby position higher than the heating position and the heating position; a recess is provided in the upper surface of the hot plate, and the adsorption mechanism is provided in the recess so that the upper end surface of the suction mechanism can come into contact with the back surface of the substrate positioned at the heating position. It has a suction pad and a negative pressure supply section that applies a negative pressure to the suction pad during heat treatment to cause the upper end surface of the suction pad to adhere to the back surface of the substrate, and the suction pad is supplied with negative pressure from the negative pressure supply section. When not receiving, the upper end surface of the suction pad is positioned above the heating position in the vertical direction, while receiving the negative pressure supply, it contracts in the vertical direction, and the upper end surface of the suction pad in the vertical direction of the substrate positioned at the heating position. It is characterized by sucking the back surface of the substrate in a state of being aligned with the back surface.

A fourth aspect of the present invention is a heating method for heating a substrate using the heating apparatus according to any one of the first to third aspects, wherein the substrate is heated face-up with its surface facing upward. It is characterized in that the back surface of the substrate is sucked by the suction mechanism during the heat treatment in which the hot plate heats the substrate from below, and the warp of the substrate is regulated.

In the invention configured as described above, the substrate is heated by the hot plate in a face-up state, and the back surface of the substrate is attracted during the heating process. Therefore, warpage of the substrate is restricted without constraining the surface of the substrate.

As described above, since the substrate is heated while the back surface of the substrate is sucked, the substrate can be heated while suppressing the warp of the substrate during the heating process, and the substrate can be heated satisfactorily. can be done. Moreover, in the above-described conventional apparatus, the surface of the substrate is constrained to suppress warping, but the present invention does not require such constraining means, and the substrate can be satisfactorily controlled without limiting the effective area on the surface of the substrate. Can be heated.

It is a figure showing a 1st embodiment of a heating device concerning the present invention. FIG. 2 is a view taken along line AA of FIG. 1; 2 is a diagram schematically showing main steps of a heating operation by the heating device shown in FIG. 1; FIG. FIG. 2 shows a second embodiment of a heating device according to the invention; FIG. 5 is a view taken along the line AA of FIG. 4; FIG. 5 is a diagram schematically showing main steps of a heating operation by the heating device shown in FIG. 4; It is a figure which shows 3rd Embodiment of the heating apparatus which concerns on this invention. FIG. 8 is a view taken along the line AA in FIG. 7; FIG. 8 is a diagram schematically showing main steps of a heating operation by the heating device shown in FIG. 7;

FIG. 1 is a diagram showing a first embodiment of a heating device according to the present invention. 2 is a view taken along the line AA of FIG. 1. FIG. This heating apparatus 1 has a rectangular shape in a plan view, and receives and heats a semiconductor package glass substrate (hereinafter simply referred to as "substrate") S on which semiconductor chips, wiring, etc. are laminated on its surface Sf. is. The material of the substrate and the type of laminate are not limited to those described above, and for example, substrates used for manufacturing semiconductor devices other than semiconductor packages may be heated. That is, the "substrate" in this specification refers to a part of the final product, and a part of the semi-finished product before the final process, which is removed and discarded or reused before the final product is completed. (so-called carrier substrate).

As shown in FIG. 1, the heating device 1 comprises a chamber 10 for receiving a substrate S. By performing the processing in the chamber 10, the gas component volatilized by the heat processing is prevented from scattering to the surroundings, and by covering the substrate S to be heated, the heat dissipation is suppressed and the energy efficiency is improved. can be done. For these purposes, the chamber 10 has a structure in which a top plate 11, a side plate 12, a bottom plate 13 and a shutter 14 are combined to form a box.

The shutter 14 is attached to an opening 15 provided on one side surface of the chamber 10 so as to be able to open and close. In the closed state, the shutter 14 closes the opening 15 by being pressed against the side surface of the chamber 10 via a packing (not shown). . On the other hand, in the open state of the shutter 14 indicated by the dotted line in FIG. 1, the substrate S can be exchanged with the outside through the opened opening 15 . That is, an unprocessed substrate S held by an external transfer robot or the like (not shown) is carried into the chamber 10 through the opening 15 . Further, the processed substrate S in the chamber 10 is carried out to the outside by a transport robot or the like.

A hot plate 2 is provided at the bottom of the chamber 10 . A plurality of recesses (not shown) are provided on the upper surface of the hot plate 2, and a sphere 23 having a slightly larger diameter than the depth of the recess is fitted into each recess. The top of these spheres 23 can support the substrate S from below, and the substrate S carried in from the outside faces upward with the surface where semiconductor chips and the like are stacked (corresponding to the "surface of the substrate" of the present invention). It is placed on the sphere 23 in a so-called face-up state. In this way, the substrate S is positioned with a minute space called a proximity gap formed from the upper surface of the hot plate 2 . The position of the substrate S positioned and heat-treated in this way (in this specification, the height position of the back surface Sb of the substrate S in the vertical direction) is referred to herein as a "heating position". In addition, as will be described in detail later, the position of the substrate S that is temporarily placed on standby in order to transfer the substrate S to and from the transport robot in the vertical direction is referred to herein as a "standby position".

As shown in FIG. 1, a heater 24 is built in the hot plate 2 to heat the substrate S positioned at the heating position (reference numeral P1 in FIG. 3). The heater 24 is actuated when power is supplied to the heater 24 from a control unit 90 that controls the entire apparatus. Thereby, the substrate S is uniformly heated by radiant heat from the upper surface of the hot plate 2 . The number and positions of the spheres 23 can be appropriately set according to the planar size of the substrate S and the like.

The heating device 1 is provided with an elevating mechanism 3 for smoothly transferring the substrate S between the hot plate 2 and the transfer robot. Specifically, the bottom plate 13 of the chamber 10 and the hot plate 2 are provided with a plurality of through holes 21 extending in the vertical direction. In this embodiment, as shown in FIG. 2, one through-hole 21 is provided corresponding to each of the four corners of the hot plate 2, and four through-holes 21 are formed in the central portion of the hot plate 2 in a rectangular shape. arranged in a shape. A lift pin 32 is inserted through each through hole 21 .

The lower ends of these eight lift pins 32 are fixed to the lifting member 33 . The elevating member 33 is supported by a lift pin driving section 34 so as to be vertically movable. The lift pin driving section 34 operates in response to the elevation command from the control section 90 to raise and lower the elevation member 33 . As a result, the eight lift pins 32 are integrally moved up and down so that the substrate S can be moved up and down. More specifically, the lift pins 32 are located above a position where the upper end surface of a suction pad 41, which is a component of the suction mechanism 4 to be described below, coincides with the standby position (reference P2 in FIG. The upper end surface moves between the same height position as the top of the sphere 23, that is, the lower position corresponding to the heating position P1.

The suction mechanism 4 has the same number of suction pads 41 as the lift pins 32 , and a negative pressure supply section 42 that supplies a negative pressure to each suction pad 41 to cause the suction pad 41 to adhere to the back surface of the substrate S. A suction pad 41 is attached to each lift pin 32 . Each suction pad 41 has a bellows structure as shown in the partial enlarged view of FIG. Each suction pad 41 is connected to the upper end of a suction hole 321 extending vertically inside the lift pin 32 . A negative pressure supply unit 42 is connected to the lower end of each suction hole 321 .

The negative pressure supply unit 42 has a suction source 421 , a suction pipe 422 connecting the suction source 421 to each suction hole 321 , and an on-off valve 423 inserted in the suction pipe 422 . As the suction source 421, for example, a vacuum pump or a vacuum utility provided in a clean room can be used. One end of the suction pipe 422 is connected to the suction source 421 . On the other hand, the other end of the suction pipe 422 is branched in the same number as the suction pads 41 , and these branched portions are connected to the lower ends of the suction holes 321 respectively. An on-off valve 423 is inserted in the suction pipe 422 on the suction source side of the branched portion. Therefore, the on-off valve 423 is opened in response to an open command from the control unit 90 to supply negative pressure to the suction pad 41 through the suction hole 321, while the on-off valve 423 is closed in response to a close command. By doing so, the negative pressure supply to the suction pad 41 is stopped.

In the heating apparatus 1 configured as described above, the control section 90 controls each section of the apparatus in accordance with a heating program pre-stored in a storage section (not shown) of the control section 90 to perform the heating process. The heat treatment by the heating device 1 will be described below with reference to FIG.

3A and 3B schematically show main steps of a heating operation by the heating device shown in FIG. In this heating device 1, each part of the device is initialized to an initial state for receiving the substrate S. As shown in FIG. In the initial state, the shutter 14 is closed and the hot plate 2 is heated to a predetermined temperature for heating the substrate S. As shown in FIG. In addition, in preparation for carrying in the next unprocessed substrate S, as shown in column (a) of FIG. Waiting until S arrives.

When the substrate S is loaded into the heating apparatus 1 in the standby state in this manner, the shutter 14 is opened, so that the substrate S can be loaded from the outside. In this state, the substrate S is carried into the chamber 10 by an external transport robot, and the substrate S is transferred onto the suction pad 41 from the transport robot. When this delivery is completed, the shutter 14 is closed after the transfer robot is evacuated. Further, the on-off valve 423 is opened and the back surface Sb of the substrate S is sucked by the suction pads 41 by supplying negative pressure to each suction pad 41 . Then, as shown in column (b) of the figure, the lift pins 32 descend while the back surface Sb is being sucked by the suction pads 41 to move the substrate S toward the heating position P1. During this movement, the back surface Sb of the substrate S is sucked and held by the suction pad 41, so that the substrate S can be stably moved to the heating position P1.

Then, as shown in column (c) of the same figure, when the lift pins 32 are lowered to the lower position, the back surface Sb of the substrate S is supported from below by the spheres 23 of the hot plate 2, and the substrate S is positioned at the main heating position P1. be done. Further, the upper end surface of the suction pad 41 is positioned at the heating position P1 while the back surface Sb of the substrate S is held by suction. At this time, the heat treatment is started, and is performed until a predetermined time elapses while the back surface Sb of the substrate S is held by suction with the suction pad 41 . During this heat treatment, the lift pins 32 are held by suction with suction pads 41 attached to the upper ends of the lift pins 32 . Therefore, warping of the substrate S can be effectively suppressed during the heat treatment.

Then, when the heat treatment is completed, the substrate is unloaded in a completely reversed procedure to the loading operation of the substrate S described above. That is, the lift pins 32 are raised to the upper position while the back surface Sb of the substrate S is sucked and held by the suction pads 41, and the substrate S is lifted to the standby position P2. The substrate S is thereby separated from the hot plate 2 . Also, the suction of the rear surface of the substrate S by the suction pad 41 is released. Thereafter, the shutter 14 is opened to allow the transport robot to enter, whereby the substrate S is transferred from the suction pad 41 to the transport robot and carried out.

As described above, according to the present embodiment, the substrate S is heated in a state where the back surface Sb of the substrate S is sucked by the suction pad 41, so that the warpage of the substrate S during the heating process can be suppressed. can be done. Moreover, in the above-described conventional apparatus, the surface of the substrate is constrained to suppress warpage. no need to restrict. Thus, the substrate S can be heated well without limiting the effective area on the surface Sf of the substrate S.

FIG. 4 is a diagram showing a second embodiment of the heating device according to the present invention. 5 is a view taken along the line AA of FIG. 4. FIG. This heating apparatus 1 differs greatly from the first embodiment in the configuration for carrying in and out the substrate S, the configuration for raising and lowering the suction pad 41, and the raising and lowering timing. are in common with In the following, while the explanation will focus on the points of difference, the same reference numerals will be given to the same configurations, and the explanation of the configurations will be omitted.

In the second embodiment, of the eight lift pins 32 used for loading and unloading the substrate S in the first embodiment, the four lift pins 32 arranged in the central portion are used to transfer and transfer the substrate S at the standby position P2. Loading/unloading of the sphere 23 is performed. On the other hand, the four pins provided corresponding to the four corners of the hot plate 2 are used as pins for raising and lowering the suction pad 41 (hereinafter referred to as "elevating pins 43"). More specifically, in the bottom plate 13 and the hot plate 2 of the chamber 10, in addition to four through holes 21 for lift pins, through holes 22 for lift pins extending in the vertical direction are provided on the hot plate 2 as shown in FIG. , one each corresponding to each of the four corners. A lifting pin 43 is inserted through each through hole 22 , and a suction pad 41 is attached to the upper end of each lifting pin 43 .

The lower ends of these four lift pins 43 are fixed to a lift member 45 . The elevating member 45 is supported by an elevating pin driving portion 46 so as to be vertically movable. The lifting pin driving section 46 operates in response to a lifting command from the control section 90 to lift the lifting member 45 up and down. As a result, the four lift pins 43 are integrally lifted and lifted so that the suction pad 41 can be lifted and lowered in the vertical direction. More specifically, the lifting pin 43 has a suction holding position where the upper end surface of the suction pad 41 coincides with the heating position P1, and a retracted position (FIG. 6) where the suction pad 41 as a whole is retracted into the lifting pin through hole 22. (see columns (a) and (b) of ).

Each suction pad 41 is connected to the upper end of a suction hole 431 extending vertically inside the lifting pin 43 . A suction pipe 422 of the negative pressure supply unit 42 is connected to the lower end of each suction hole 431, as in the first embodiment. Therefore, the on-off valve 423 is opened in response to an open command from the control unit 90 to supply negative pressure to the suction pad 41 through the suction hole 431, while the on-off valve 423 is closed in response to a close command. By doing so, the negative pressure supply to the suction pad 41 is stopped.

6A and 6B schematically show the main steps of the heating operation by the heating device shown in FIG. In the initial state of the heating device 1 according to the second embodiment, the shutter 14 is closed and the temperature of the hot plate 2 is raised to a predetermined temperature for heating the substrate S, as in the first embodiment. On the other hand, in preparation for the loading of the next unprocessed substrate S, as shown in column (a) of FIG. waiting until As will be described later, the lift pins 43 are retracted into the through holes 22 together with the suction pads 41 until just before the heat treatment is started, and the supply of negative pressure to the suction pads 41 is stopped.

When the substrate S is loaded into the heating device 1 in the standby state, the shutter 14 is opened, and the substrate S is loaded into the chamber 10 by an external transport robot, and the substrate S is transported into the chamber 10 as shown in column (b) of FIG. is transferred onto the lift pins 32 from the transfer robot. When this delivery is completed, the shutter 14 is closed after the transfer robot is evacuated.

In the second embodiment, the suction pad 41 is not supplied with negative pressure even at this stage, and the substrate S is transferred from the lift pins 32 to the spheres 23 of the hot plate 2 as the lift pins 32 descend into the through holes 21 . After the substrate S is positioned at the heating position P1, the negative pressure supply is started. More specifically, as shown in column (c) of the figure, immediately after the substrate S is delivered to the spherical body 23, the lifting pins 43 are positioned at the heating position P1 by the suction pads 41 attached to the upper ends of the lifting pins 43. It rises until it abuts on the back surface of the substrate S which is being held. Then, while the contact is maintained, the on-off valve 423 is opened and the back surface Sb of the substrate S is sucked by the suction pads 41 by supplying negative pressure to each suction pad 41 .

The substrate S is heated while the back surface Sb of the substrate S positioned at the heating position P<b>1 is sucked by the suction pad 41 . This adsorption and holding of the back surface of the substrate is continued during the heat treatment. Therefore, it is possible to effectively suppress warpage of the substrate S during the heat treatment. When the heat treatment is completed, the substrate is unloaded in a completely reversed procedure to the loading operation of the substrate S described above. That is, after the suction by the suction pad 41 is released, the lift pins 32 are lifted to receive the heat-treated substrate S from the sphere 23 and lift it up to the standby position P2. Thereafter, the shutter 14 is opened to allow the transport robot to enter, whereby the substrate S is transferred from the lift pins 32 to the transport robot and carried out.

As described above, in the second embodiment as well, the substrate S is heated while the back surface Sb of the substrate S is sucked by the suction pad 41. Therefore, it is possible to prevent the substrate S from warping during the heating process. The substrate S can be satisfactorily heated without limiting the effective area on the surface Sf of the substrate S, in other words, the same effect as in the first embodiment.

In the above-described embodiment, the through holes 21 and 22 respectively correspond to examples of the "first through hole" and the "second through hole" of the present invention. Also, the suction holes 321 and 431 respectively correspond to examples of the "first suction hole" and the "second suction hole" of the present invention. Further, the lift pin driving section 34 and the lifting pin driving section 46 correspond to examples of the "first driving section" and the "second driving section" of the present invention, respectively.

By the way, in the above-described embodiment, the present invention is applied to the heating device 1 that controls the height position of the suction pad 41 by performing heat treatment through the proximity gap and vertically moving the suction pad 41 . , but the scope of application of the present invention is not limited to these. For example, as shown in FIGS. 7 and 8, the substrate S is directly placed on the upper surface of the hot plate 2, and the back surface Sb of the substrate S is heated while being sucked by the suction pad 41 fixedly arranged on the upper surface of the hot plate 2. You may comprise so that a process may be performed (3rd Embodiment).

FIG. 7 is a diagram showing a third embodiment of the heating device according to the invention. 8 is a view taken along line AA of FIG. 7. FIG. As shown in FIG. 7, the heating device 1 is configured to transfer the substrate S by means of four lift pins 32 arranged in the central portion of the hot plate 2, as in the second embodiment. there is Then, the back surface Sb of the substrate S is directly placed on the upper surface of the hot plate 2 that does not have the spheres 23 by raising and lowering the lift pins 32, and the substrate S is heated. That is, in the third embodiment, the upper surface position of the hot plate 2 in the vertical direction is the heating position P1.

Also, suction pads 41 are arranged at the four corners of the hot plate 2 . More specifically, as shown in the partial enlarged view of FIG. 7, at the four corners of the hot plate 2, concave portions 25 are provided on the upper surface of the hot plate and suction pads 41 are arranged. The suction pad 41 is connected with a suction pipe 422 . When the negative pressure is not supplied from the negative pressure supply unit 42, the upper end of the suction pad 41 protrudes from the opening of the recess 25 by a predetermined length H, as shown in FIG. Therefore, when the substrate S is lowered by raising and lowering the lift pins 32, the upper end surfaces of the suction pads 41 come into contact with the back surface Sb of the substrate S. As shown in FIG. When the suction pad 41 is supplied with negative pressure from the negative pressure supply unit 42 in this abutment state, the suction pad 41 shrinks in the vertical direction and enters the concave portion 25 while suctioning the back surface Sb of the substrate S, and the suction pad 41 is pushed upward. The end surface is aligned with the heating position P1, and the back surface Sb of the substrate S is brought into close contact with the top surface of the hot plate 2. As shown in FIG.

9A and 9B schematically show main steps of a heating operation by the heating device shown in FIG. 7. FIG. In the initial state of the heating device 1 according to the third embodiment, the shutter 14 is closed and the temperature of the hot plate 2 is raised to a predetermined temperature for heating the substrate S, as in the first embodiment. Further, the supply of negative pressure to the suction pad 41 is stopped, and the suction pad 41 is in a state in which the upper end portion protrudes by a predetermined length H from the opening of the recess 25 . On the other hand, in preparation for the loading of the next unprocessed substrate S, as shown in column (a) of FIG. waiting until

When the substrate S is loaded into the heating apparatus 1 in the standby state as described above, the shutter 14 is opened, and the substrate S is loaded into the chamber 10 by an external transport robot, as shown in column (b) of FIG. Next, the substrate S is transferred onto the lift pins 32 from the transfer robot. When this delivery is completed, the shutter 14 is closed after the transfer robot is evacuated. At this stage as well, no negative pressure is supplied to the suction pad 41 , and the upper end of the suction pad 41 protrudes from the recess 25 .

Subsequently, the central region of the back surface Sb of the substrate S is directly placed on the upper surface of the hot plate 2 by lowering the lift pins 32 into the through holes 21 , while the four corner regions are brought into contact with the upper end surfaces of the suction pads 41 . It is in a state of floating from the hot plate 2 by a distance H. However, in conjunction with the descent of the substrate S, the on-off valve 423 is opened to supply negative pressure to each suction pad 41, and as shown in column (c) of FIG. The back surface Sb of the substrate S is sucked into the recess 25 , and the entire back surface Sb of the substrate S is brought into close contact with the upper surface of the hot plate 2 .

In this manner, the substrate S is positioned at the heating position P1 while the back surface Sb of the substrate S is being sucked by the suction pad 41, and the heating process is performed. This heating process is performed until a predetermined time passes while the back surface Sb of the substrate S is held by suction with the suction pad 41 . Therefore, warping of the substrate S can be effectively suppressed during the heat treatment. When the heat treatment is completed, the substrate is unloaded in a completely reversed procedure to the loading operation of the substrate S described above. That is, after the suction by the suction pad 41 is released, the lift pins 32 are lifted to receive the heat-treated substrate S from the hot plate 2 and lift it up to the standby position P2. Thereafter, the shutter 14 is opened to allow the transport robot to enter, whereby the substrate S is transferred from the lift pins 32 to the transport robot and carried out.

As described above, in the third embodiment as well, the substrate S is heated while the back surface Sb of the substrate S is sucked by the suction pad 41. Therefore, it is possible to prevent the substrate S from warping during the heating process. , the substrate S can be satisfactorily heated without limiting the effective area on the surface Sf of the substrate S, in other words, the same effect as in the above embodiment.

The present invention is not limited to the above-described embodiments, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above embodiment, the substrate S is positioned at the heating position P1 using four or eight lift pins 32, but the number and arrangement of the lift pins 32 are not limited to this. The number and arrangement of the lifting pins 43 are also the same.

Further, in the above-described first embodiment, the suction pads 41 are attached to all eight lift pins 32 , but the suction pads 41 may be attached only to some of the lift pins 32 .

Further, in the above embodiment, the suction pad 41 having a bellows structure is used, but a suction pad having a structure other than this may be used. Further, since the suction pad 41 sucks the rear surface Sb of the substrate S during the heat treatment, it is desirable to configure the suction pad 41 with a material having a relatively large heat capacity. is preferred.

In addition, since part of the substrate S is sucked by the suction pad 41, there is a possibility that the temperature of the substrate at the sucked portion may drop locally. If such a local temperature drop poses a problem, hot air may be sent through the through holes 21 and 44 . Another through-hole may be provided adjacent to the through-holes 21 and 44, and hot air may be sent through the another through-hole to suppress the local temperature drop.

Further, in the above-described embodiment, as shown in the partial enlarged views of FIGS. 2, 5 and 8, the suction pad 41 having a circular suction port in a plan view is used. The shape is not limited, and a suction pad finished in an elliptical shape or an oval shape may be used.

The present invention can be applied to all heating techniques in which a hot plate is used to heat a substrate from below.

REFERENCE SIGNS LIST 1 heating device 2 hot plate 3 lifting mechanism 4 adsorption mechanism 21 (first) through hole 22 (second) through hole 25 concave portion 32 lift pin 34 lift pin driving section (first driving section)
41... Suction pad 42... Negative pressure supply part 43... Lifting pin 46... Lifting pin driving part (second driving part)
321 (first) suction hole 422 suction pipe 431 (second) suction hole P1 heating position P2 standby position S substrate Sb rear surface Sf surface surface

Claims (4)

a hot plate that heats from below the substrate positioned at the heating position in a face-up state with the surface facing upward;
an elevating mechanism that elevates the substrate with respect to the hot plate between a standby position higher than the heating position in the vertical direction and the heating position to position the substrate in the vertical direction;
a suction mechanism for sucking the back surface of the substrate during a heating process in which the substrate positioned at the heating position by the lifting mechanism is heated by the hot plate ;
The hot plate has a first through hole penetrating in the vertical direction,
The elevating mechanism includes a lift pin that is vertically movable through the first through hole, and a first driving unit that vertically moves the lift pin,
The suction mechanism includes a suction pad attached to the upper end of the lift pin, and a first suction hole provided inside the lift pin during the heat treatment to apply a negative pressure to the suction pad. and a negative pressure supply part that is attracted to the back surface of the substrate by the upper end face.
A heating device characterized by: a hot plate that heats from below the substrate positioned at the heating position in a face-up state with the surface facing upward;
an elevating mechanism that elevates the substrate with respect to the hot plate between a standby position higher than the heating position in the vertical direction and the heating position to position the substrate in the vertical direction;
a suction mechanism for sucking the back surface of the substrate during a heating process in which the substrate positioned at the heating position by the lifting mechanism is heated by the hot plate ;
The hot plate has a second through hole penetrating in the vertical direction,
The suction mechanism includes a lifting pin that can be moved up and down in the vertical direction through the second through hole, a suction pad attached to an upper end of the lifting pin, and a lifting pin that moves up and down in the vertical direction. A second driving unit for positioning the suction pad in the vertical direction, and a second suction hole provided inside the lift pin during the heat treatment to apply a negative pressure to the suction pad to remove the suction pad. and a negative pressure supply part that is attracted to the back surface of the substrate by the upper end face.
A heating device characterized by: a hot plate that heats from below the substrate positioned at the heating position in a face-up state with the surface facing upward;
an elevating mechanism that elevates the substrate with respect to the hot plate between a standby position higher than the heating position in the vertical direction and the heating position to position the substrate in the vertical direction;
a suction mechanism for sucking the back surface of the substrate during a heating process in which the substrate positioned at the heating position by the lifting mechanism is heated by the hot plate ;
A recess is provided on the upper surface of the hot plate,
The suction mechanism includes a suction pad arranged in the recess and having an upper end face contactable with the back surface of the substrate positioned at the heating position, and applying a negative pressure to the suction pad during the heating process. and a negative pressure supply unit that causes the back surface of the substrate to be attracted by the upper end surface of the suction pad,
When the suction pad is not supplied with negative pressure from the negative pressure supply unit, the upper end surface of the suction pad is positioned above the heating position in the vertical direction. It shrinks and sucks the back surface of the substrate in a state in which the upper end surface of the suction pad is aligned with the back surface of the substrate positioned at the heating position in the vertical direction.
A heating device characterized by: A heating method for heating a substrate using the heating device according to any one of claims 1 to 3,
During the heat treatment in which the substrate is heated from below by the hot plate in a face-up state in which the front surface faces upward, the back surface of the substrate is adsorbed by the adsorption mechanism to restrict warpage of the substrate. heating method.

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