KR101770221B1 - Substrate holding apparatus - Google Patents

Substrate holding apparatus Download PDF

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Publication number
KR101770221B1
KR101770221B1 KR1020160054517A KR20160054517A KR101770221B1 KR 101770221 B1 KR101770221 B1 KR 101770221B1 KR 1020160054517 A KR1020160054517 A KR 1020160054517A KR 20160054517 A KR20160054517 A KR 20160054517A KR 101770221 B1 KR101770221 B1 KR 101770221B1
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South Korea
Prior art keywords
substrate
support plate
support
supporting
plate
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KR1020160054517A
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Korean (ko)
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박영수
류수렬
손혁주
김영호
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(주)에스티아이
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Priority to KR1020160054517A priority Critical patent/KR101770221B1/en
Priority to TW105123969A priority patent/TWI613754B/en
Priority to CN201610619714.XA priority patent/CN107342255A/en
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Publication of KR101770221B1 publication Critical patent/KR101770221B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The purpose of the present invention is to provide a substrate supporting device capable of preventing a process defect caused by bending of a substrate by minimizing a thermal loss by thermal transfer between the substrate and a support plate for supporting the substrate when a reflow process for manufacturing a single system (SoC) using an epoxy molding compound (EMC) substrate is performed. The substrate supporting device (100) of the present invention to achieve the purpose, which is a substrate supporting device for fixating and supporting an epoxy molding compound (EMC) substrate when a reflow process for manufacturing a single chip system (SoC) is performed, comprises: a support plate (110) provided in the chamber in which the substrate is thermally treated to be lifted to support the substrate; and a plurality of substrate support members (120) which are provided on the support plate (110) at regular intervals, support the mounted substrate, and are made of an insulating material for blocking heat transfer between the heat-treated substrate and the support plate (110).

Description

기판지지장치{Substrate holding apparatus}[0001] The present invention relates to a substrate holding apparatus,

본 발명은 기판지지장치에 관한 것으로서, 더욱 상세하게는 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 이용하여 단일 칩 시스템(SoC)을 제조하기 위한 리플로우 공정의 수행 시 기판의 열손실에 따른 휨 현상을 방지하기 위한 기판지지장치에 관한 것이다.The present invention relates to a substrate supporting apparatus, and more particularly, to a substrate supporting apparatus, and more particularly, to an apparatus and a method for manufacturing a single chip system (SoC) by using a substrate made of an epoxy molding compound (EMC) To a substrate supporting apparatus.

반도체 제품의 대용량화 및 고성능화를 위한 수단으로 반도체 패키지 기술이 적용되고 있는데, 이러한 반도체 패키지 공정에서 반도체가 실장 되는 기판이나 서로 다른 반도체 사이를 전기적으로 연결하기 위한 범핑 볼(bumping ball)을 형성하는 공정을 리플로우(Reflow) 공정이라 칭한다.BACKGROUND ART [0002] Semiconductor package technology has been applied as a means for increasing the capacity and high performance of semiconductor products. In such a semiconductor package process, a process of forming a bumping ball for electrically connecting a substrate on which a semiconductor is mounted, or between different semiconductors It is referred to as a reflow process.

종래에는 리플로우 공정에 사용되는 기판이 실리콘(Si) 재질로 구성되어 있어 일반 진공척으로도 기판을 충분히 고정시켜 공정을 수행할 수 있었다.Conventionally, since the substrate used in the reflow process is made of silicon (Si), the substrate can be sufficiently fixed by a general vacuum chuck.

그러나, 하나의 집적회로에 고집적화 된 단일 칩 시스템(SoC; System On Chip)을 제조하는 경우에는 종래 실리콘 기판이 아닌 에폭시 몰딩 컴파운드(EMC; Epoxy Molding Compound) 재질의 기판을 이용하여 리플로우 공정이 수행되고, 이와 같은 리플로우 공정은 약 250℃의 고온 상태에서 공정이 수행되는데, 에폭시 몰딩 컴파운드 재질의 기판은 열팽창율이 큰 재질의 특성상, 리플로우 공정의 진행 시 기판에 휨(Warpage) 현상이 발생하게 되며, 이 경우 기판을 안정적으로 고정시켜 지지하지 못할 경우에는 심각한 공정 불량을 초래하게 된다.However, when a highly integrated single chip system (SoC) is manufactured in one integrated circuit, a reflow process is performed using a substrate made of an epoxy molding compound (EMC) rather than a conventional silicon substrate The reflow process is performed at a high temperature of about 250 ° C. The substrate of the epoxy molding compound material is warped due to the nature of the material having a large thermal expansion coefficient during the reflow process In this case, if the substrate is stably fixed and can not be supported, a serious process failure is caused.

또한 리플로우 공정의 진행 시, 가열된 기판과, 기판이 안착되어 지지되는 구조물 간의 열전달에 의해 기판에 열손실이 발생하는 경우에는, 기판의 상면과 저면 간에 온도차가 발생하게 되어 기판의 휨 현상을 초래하게 된다.In addition, when heat is generated in the substrate due to heat transfer between the heated substrate and the structure in which the substrate is seated and supported during the reflow process, a temperature difference occurs between the upper surface and the lower surface of the substrate, .

종래 기판처리공정에서 기판을 고정시켜 지지하기 위한 장치와 관련된 선행기술로서, 등록특허 제10-1501171호(리플로우 처리 유닛)에는 진공압에 의해 기판을 흡착하는 진공척이나, 기계적 클램핑 또는 정전척이 사용될 수 있다는 일반적인 기술내용이 소개되어 있다.As a prior art related to an apparatus for holding and supporting a substrate in a conventional substrate processing process, Japanese Patent Application No. 10-1501171 (reflow processing unit) discloses a vacuum chuck for sucking a substrate by vacuum pressure, a vacuum chuck for mechanically clamping or electrostatic chucking Can be used as a general description.

다른 선행기술로서, 등록특허 제10-0645647호(플렉시블 기판용 지그)에는 반송 지그의 상면에서 힌지에 의해 구동되는 누름판으로 플렉시블 기판을 처지지 않은 상태로 고정하는 구조가 개시되어 있다.As another prior art, Japanese Patent Laid-Open No. 10-0645647 (a jig for a flexible substrate) discloses a structure for fixing a flexible substrate in a non-sagged state to a pressing plate which is driven by a hinge from an upper surface of a transfer jig.

상기 선행기술들에는 기계적 클램핑 또는 진공의 흡착력에 의해 기판을 고정시켜 지지한다는 내용이 기술되어 있으나, 상기 에폭시 몰딩 컴파운드 재질의 기판을 이용하는 리플로우 공정에서와 같이 열팽창에 의해 기판의 휨 현상이 심하게 발생하는 경우, 기판의 열손실을 방지하고 기판을 견고하게 고정시켜 지지함으로써 기판의 휨 현상에 따른 공정 불량을 방지하기 위한 구성은 미비한 상황이다.The prior art describes that the substrate is fixed and supported by the mechanical clamping or vacuum attraction force. However, as in the reflow process using the substrate of the epoxy molding compound material, the substrate is warped to a great extent due to thermal expansion The structure for preventing the process failure due to the warping of the substrate is insufficient in that heat loss of the substrate is prevented and the substrate is firmly fixed and supported.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 이용하여 단일 칩 시스템(SoC)을 제조하기 위한 리플로우 공정의 수행 시, 기판과 이를 지지하는 지지플레이트 간의 열전달에 의한 열손실을 최소화함으로써 기판의 휨 현상에 의한 공정 불량을 방지할 수 있는 기판지지장치를 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a single chip system (SoC) using a substrate made of an epoxy molding compound (EMC) And it is an object of the present invention to provide a substrate supporting apparatus capable of minimizing heat loss due to heat transfer between the plates, thereby preventing process defects due to warping of the substrate.

상술한 바와 같은 목적을 구현하기 위한 본 발명의 기판지지장치(100)는, 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서, 상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110)와, 상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120)를 포함하여 구성된다.The substrate supporting apparatus 100 of the present invention for realizing the above-mentioned object is a substrate supporting apparatus for supporting a substrate of an epoxy molding compound (EMC) in a reflow process for manufacturing a single chip system (SoC) A substrate supporting apparatus comprising: a support plate (110) which is provided in a chamber in which a substrate is heat-treated and is capable of being elevated and supported for supporting the substrate; And a plurality of substrate supporting members 120 made of a heat insulating material for supporting the substrate in place and for blocking heat transfer between the heat treated substrate and the supporting plate 110.

상기 지지플레이트(110) 상에는, 진공이 인가되어 상기 기판을 흡착하기 위한 단열 소재로 이루어진 다수개의 진공컵(130)이 소정간격으로 이격되어 구비될 수 있다.A plurality of vacuum cups 130 may be spaced apart from each other by a predetermined distance on the support plate 110. The vacuum cups 130 may be formed of a heat insulating material for vacuuming the substrate.

상기 지지플레이트(110)의 가장자리부에는, 상기 지지플레이트(110) 상에 안착된 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하여 상기 기판을 고정 지지하기 위한 다수개의 클램핑수단(150)이 소정간격으로 이격되어 구비될 수 있다.A plurality of clamping means 150 for pressing and supporting the edge of the substrate placed on the support plate 110 toward the support plate 110 to fix and support the substrate is formed at the edge of the support plate 110, Spaced apart from each other.

상기 클램핑수단(150)은, 상기 지지플레이트(110)에 힌지 결합되어 회전 가능하도록 구비되어 상기 지지플레이트(110) 상에 안착되는 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하는 누름판(151)과, 상기 누름판(151)을 상기 지지플레이트(110)를 향하는 방향으로 탄성지지하는 탄성부재(154)를 포함하되, 상기 누름판(151)은 상기 지지플레이트(110)를 관통하여 승강 가능하도록 구비되는 승강핀(63)에 연동하여 힌지축(152)을 중심으로 상하로 회전되는 것으로 구성될 수 있다.The clamping unit 150 includes a pressing plate 151 which is hinged to the supporting plate 110 so as to be rotatable and presses the rim of the substrate mounted on the supporting plate 110 toward the supporting plate 110, And an elastic member 154 for elastically supporting the pressing plate 151 in a direction toward the supporting plate 110. The pressing plate 151 is provided to be able to move up and down through the supporting plate 110 And may be configured to be rotated up and down about the hinge shaft 152 in conjunction with the lift pins 63. [

상기 지지플레이트(110)는, 중앙부(111)와, 상기 중앙부(111)의 둘레에 동심 구조로 구비된 복수의 원형부(112)와, 상기 중앙부(111)와 복수의 원형부(112)를 연결하며 방사상으로 구비되는 복수의 연결부(113)를 포함하고, 상기 기판지지부재(120)는 상기 원형부(112)와 연결부(113) 상에 구비될 수 있다.The support plate 110 includes a central portion 111, a plurality of circular portions 112 concentrically formed around the central portion 111, and a plurality of circular portions 112, And the substrate support member 120 may be provided on the circular portion 112 and the connection portion 113. The connection portion 113 may include a plurality of connection portions 113 that are radially connected to each other.

상기 중앙부(111)에는 상기 연결부(113)의 사이사이에 위치하도록 다수개의 연장부(114)가 방사상으로 연장 형성되고, 상기 연장부(114) 상에는 상기 기판지지부재(120)가 추가로 구비될 수 있다.A plurality of extension portions 114 are radially extended from the center portion 111 to be located between the connection portions 113 and the substrate support member 120 is additionally provided on the extension portion 114 .

상기 지지플레이트(110)는, 중앙부(111)와, 상기 중앙부(111)의 둘레에 동심 구조로 구비된 복수의 원형부(112)와, 상기 중앙부(111)와 복수의 원형부(112)를 연결하며 방사상으로 구비되는 복수의 연결부(113)를 포함하고, 상기 진공컵(130)은, 상기 중앙부(111)와 상기 원형부(112) 및 상기 연결부(113) 상에 구비될 수 있다.The support plate 110 includes a central portion 111, a plurality of circular portions 112 concentrically formed around the central portion 111, and a plurality of circular portions 112, And the vacuum cup 130 may be provided on the central portion 111, the circular portion 112, and the connection portion 113. The vacuum cup 130 may include a plurality of connection portions 113,

상기 중앙부(111)와 원형부(112) 및 연결부(113)의 내부에는 상기 다수개의 진공컵(130)에 진공을 인가하기 위한 진공라인이 연결될 수 있다.A vacuum line for applying a vacuum to the plurality of vacuum cups 130 may be connected to the central portion 111, the circular portion 112, and the connection portion 113.

상기 지지플레이트(110)의 테두리부에는 원주방향을 따라 소정간격으로 이격되어 다수개의 돌출부(115)가 형성되고, 상기 다수개의 돌출부(115) 상에는 링플레이트(140)가 결합되며, 상기 링플레이트(140) 상에는 상기 다수개의 클램핑수단(150)이 구비될 수 있다.A plurality of protrusions 115 are formed on the rim of the support plate 110 at predetermined intervals along the circumferential direction and the ring plate 140 is coupled to the plurality of protrusions 115, 140 may be provided with the plurality of clamping means 150.

상기 링플레이트(140) 상에는 인접하게 배치되는 상기 클램핑수단(150)의 사이에 구비되어 상기 기판의 외측단을 지지하여 기판의 측방향 유동을 방지하기 위한 다수개의 기판가이드부(160)가 구비될 수 있다.A plurality of substrate guide parts 160 are provided on the ring plate 140 between the clamping devices 150 disposed adjacent to each other to support the outer end of the substrate to prevent lateral movement of the substrate .

상기 기판가이드부(160)는, 상기 링플레이트(140) 상에 결합되는 몸체(161)와, 상기 몸체(161)의 일측면에서 상기 지지플레이트(110)의 중앙을 향하는 방향으로 소정길이 돌출되어 상기 기판의 외측단을 지지하는 가이드돌기(162)로 이루어질 수 있다.The substrate guide part 160 includes a body 161 coupled to the ring plate 140 and a guide part 160 protruding from the one side of the body 161 by a predetermined length in a direction toward the center of the support plate 110 And a guide protrusion 162 for supporting an outer end of the substrate.

상기 지지플레이트(110)의 테두리부에는 원주방향을 따라 소정간격으로 이격되어 다수개의 돌출부(115)가 형성되고, 상기 다수개의 돌출부(115) 상에는 상기 다수개의 클램핑수단(150)이 구비될 수 있다.A plurality of protrusions 115 may be formed on the rim of the support plate 110 at predetermined intervals along the circumferential direction and the plurality of clamping units 150 may be provided on the protrusions 115 .

상기 돌출부(115) 상에는 상기 클램핑수단(150)의 높낮이를 조절하기 위해 서로 다른 두께를 가지며 교체 설치 가능한 스페이서(156)가 구비될 수 있다.Spacers 156 may be provided on the protrusions 115 so as to adjust the height of the clamping unit 150 and have different thicknesses.

상기 단열 소재는, PEEK, 고강도 플라스틱, 플라비스, 테프론 중 어느 하나일 수 있다.The heat insulating material may be any one of PEEK, high strength plastic, Flavice, and Teflon.

본 발명에 따른 기판지지장치에 의하면, 기판을 지지하는 지지플레이트 상에 단열 소재로 이루어진 기판지지부재와 진공컵을 구비하여, 기판과 지지플레이트 간의 열전달에 의한 기판의 열손실을 방지함으로써, 에폭시 몰딩 컴파운드 재질로 이루어진 기판의 휨 현상을 효과적으로 방지하고, 기판의 온도를 일정하게 유지시켜 기판의 가열 속도를 증대시키고 기판의 가열 시간을 단축할 수 있게 되며, 이로써 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정의 불량률을 감소시킬 수 있다.According to the substrate supporting apparatus of the present invention, the substrate supporting member and the vacuum cup, which are made of a heat insulating material, are provided on the supporting plate for supporting the substrate, thereby preventing heat loss of the substrate due to heat transfer between the substrate and the supporting plate, It is possible to effectively prevent warpage of the substrate made of the compound material, to maintain the temperature of the substrate constant, to increase the heating speed of the substrate and to shorten the heating time of the substrate, It is possible to reduce the defective rate of the reflow process.

또한 지지플레이트의 가장자리부에는 지지플레이트 상에 안착된 기판의 테두리부를 상기 지지플레이트 측으로 가압하여 기판을 고정 지지하며, 안착된 기판의 위치 이탈을 방지하기 위한 클램핑수단을 구비함으로써, 기판의 휨 현상을 확실하게 방지할 수 있다.Further, since the edge of the support plate is provided with clamping means for pressing the edge of the substrate placed on the support plate toward the support plate to fix and support the substrate, and to prevent displacement of the mounted substrate, It can be surely prevented.

도 1은 본 발명의 일실시예에 따른 기판지지장치를 포함하는 기판처리장치를 개략적으로 나타낸 단면도,
도 2는 본 발명의 제1실시예에 따른 기판지지장치의 열린 상태를 나타낸 사시도,
도 3은 본 발명의 제1실시예에 따른 기판지지장치의 열린 상태를 나타낸 평면도,
도 4는 본 발명의 제1실시예에 따른 기판지지장치의 닫힌 상태를 나타낸 사시도,
도 5는 본 발명의 제1실시예에 따른 기판처리장치에 구비되는 냉각부의 사시도,
도 6은 본 발명의 제1실시예에 따른 기판지지장치가 냉각부 상에 안착된 모습을 나타낸 사시도,
도 7은 본 발명의 제2실시예에 따른 기판지지장치의 열린 상태를 나타낸 사시도,
도 8은 본 발명의 제2실시예에 따른 기판지지장치의 열린 상태를 나타낸 평면도,
도 9는 본 발명의 제2실시예에 따른 기판지지장치의 닫힌 상태를 나타낸 사시도,
도 10은 본 발명의 제2실시예에 따른 기판지지장치가 냉각부 상에 안착된 모습을 나타낸 사시도,
도 11은 클램핑수단의 높낮이 조절 작용을 설명하기 위한 단면도.1 is a cross-sectional view schematically showing a substrate processing apparatus including a substrate holding apparatus according to an embodiment of the present invention;
FIG. 2 is a perspective view showing an open state of the substrate holding apparatus according to the first embodiment of the present invention, FIG.
3 is a plan view showing the open state of the substrate holding apparatus according to the first embodiment of the present invention,
4 is a perspective view showing a closed state of the substrate supporting apparatus according to the first embodiment of the present invention,
5 is a perspective view of a cooling unit provided in the substrate processing apparatus according to the first embodiment of the present invention,
6 is a perspective view showing a state in which the substrate supporting apparatus according to the first embodiment of the present invention is seated on the cooling unit;
FIG. 7 is a perspective view illustrating an open state of a substrate holding apparatus according to a second embodiment of the present invention. FIG.
8 is a plan view showing the open state of the substrate holding apparatus according to the second embodiment of the present invention,
9 is a perspective view showing a closed state of the substrate supporting apparatus according to the second embodiment of the present invention,
10 is a perspective view showing a state in which a substrate supporting apparatus according to a second embodiment of the present invention is mounted on a cooling unit;
11 is a sectional view for explaining a height adjusting function of the clamping means;

이하 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대한 구성 및 작용을 상세히 설명하면 다음과 같다. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1을 참조하면, 본 발명이 적용되는 기판처리장치(1)는, 단일 칩 시스템(SoC)을 제조하기 위하여 에폭시 몰딩 컴파운드(EMC; Epoxy Molding Compound) 재질의 기판(W)을 열처리하는 리플로우(Reflow) 공정을 수행하기 위한 장치로서, 기판(W)이 열처리되는 열처리 공간(S)이 내부에 마련되고, 일측에는 기판(W)이 반입/반출되도록 개폐되는 도어(11)를 구비한 챔버(10), 상기 챔버(10)의 상부에 구비되어 기판(W)을 가열하는 가열부(20), 상기 가열부(20)의 하측에 구비되며 다수의 분사홀(31)이 형성되어 가스공급부(40)를 통하여 공급되는 공정가스가 열처리 공간(S)에 균일하게 분사되도록 하는 샤워헤드(30), 상기 챔버(10)의 하부에 구비되어 가열부(20)에 의해 열처리된 기판(W)을 냉각하는 냉각부(50), 상기 가열부(20)와 근접하는 가열 위치와, 상기 냉각부(50)에 접촉되는 냉각 위치 사이에서 기판(W)과 기판(W)이 안착 고정되는 지지플레이트(110)를 승강시키는 승강구동부(60), 챔버(10)의 하부에 구비되어 열처리 공간(S)으로 분사된 공정가스가 배출되는 배기부(70)를 포함한다. 그리고, 상기 챔버(10)의 내부에는 기판(W)을 고정시켜 지지하기 위한 기판지지장치(100)가 구비된다.1, the substrate processing apparatus 1 to which the present invention is applied includes a substrate processing apparatus 1 for reflowing a substrate W of an epoxy molding compound (EMC) material to produce a single chip system (SoC) The apparatus for performing a reflow process includes a chamber having a heat treatment space S in which a substrate W is heat treated and a door 11 having a door 11 opened / A heating unit 20 provided at an upper portion of the chamber 10 to heat the substrate W and a plurality of injection holes 31 provided at a lower side of the heating unit 20, A showerhead 30 for uniformly injecting the process gas supplied through the chamber 40 to the heat treatment space S, a substrate W provided below the chamber 10 and heat- A heating position in proximity to the heating section 20 and a cooling position in contact with the cooling section 50, An elevating driving part 60 for raising and lowering the support plate 110 on which the substrate W and the substrate W are seated and fixed between the teeth, a process gas provided in the lower part of the chamber 10 and injected into the heat treatment space S, And includes an evacuated portion 70. A substrate supporting apparatus 100 for holding and supporting a substrate W is provided in the chamber 10.

상기 가열부(20)는 기판(W)의 상측으로 이격된 위치에 구비되어 기판(W)의 상면에 열을 공급하기 위한 구성으로서, 가열광을 조사하는 램프 형태 또는 히터가 내장되어 열을 방사하는 플레이트 형태 등으로 구성될 수 있다. 상기 가열부(20)는 가스공급부(40)의 둘레와 샤워헤드(30)의 상측에 근접하도록 구비되어, 가스공급부(40)로부터 샤워헤드(30)로 공급되는 공정가스는 가열부(20)에 의해 공정온도에 적합한 온도로 가열된 후에 분사홀(31)을 통해 열처리 공간(S)으로 분사된다.The heating unit 20 is provided at a position spaced apart from the upper side of the substrate W and configured to supply heat to the upper surface of the substrate W. The heating unit 20 includes a lamp or a heater, And the like. The heating unit 20 is provided so as to be close to the periphery of the gas supply unit 40 and the upper side of the showerhead 30. The process gas supplied from the gas supply unit 40 to the showerhead 30 is supplied to the heating unit 20, And is injected into the heat treatment space S through the injection hole 31 after being heated to a temperature suitable for the process temperature.

상기 냉각부(50)는 가열부(20)에 의해 가열 처리된 기판(W)과 지지플레이트(110)를 반출이 가능한 온도로 냉각하기 위한 구성으로서, 냉각부(50)의 내부에는 냉각수가 흐르는 냉각수로(미도시됨)와 같은 열 제거 수단이 구비될 수 있다.The cooling unit 50 has a structure for cooling the substrate W heated by the heating unit 20 and the support plate 110 to a temperature at which the substrate W can be taken out of the cooling unit 50. In the cooling unit 50, A heat removal means such as a cooling water line (not shown) may be provided.

상기 승강구동부(60)는 서보 모터 또는 에어 실린더와 같은 구동원의 구동에 의해 승강되는 리프트핀(61)과 승강지지부(62) 및 승강핀(63)을 포함하여 구성된다. 상기 승강구동부(60)에는 상기 리프트핀(61)과 승강지지부(62) 및 승강핀(63)을 각각 구동하기 위한 별도의 액츄에이터가 구비될 수 있다.The lifting and lowering driving unit 60 includes a lift pin 61 and a lifting and supporting unit 62 and a lifting pin 63 which are lifted and lowered by driving of a driving source such as a servo motor or an air cylinder. The elevation driving unit 60 may be provided with a separate actuator for driving the lift pins 61, the elevation support unit 62, and the elevation pins 63, respectively.

상기 리프트핀(61)은 냉각부(50)와 지지플레이트(110)를 관통하여 승강되도록 구비되며, 이송로봇과 같은 기판이송장치(미도시됨)로부터 인계된 기판(W)을 지지플레이트(110) 상에 안착되도록 하거나, 지지플레이트(110)로부터 기판(W)을 이격되도록 하는 기능을 한다.The lift pins 61 are provided to move up and down through the cooling unit 50 and the support plate 110 and move the substrate W transferred from a substrate transfer device such as a transfer robot to the support plate 110 Or to move the substrate W away from the support plate 110. [0035]

상기 승강지지부(62)는 냉각부(50)를 상하로 관통하여 지지플레이트(110)를 지지하며 승강되도록 구비되어, 지지플레이트(110)와 이에 고정된 기판(W)을 가열부(20)와 근접하는 가열 위치와 냉각부(50)와 접촉되는 냉각 위치 사이에서 승강되도록 하는 기능을 한다.The lifting and supporting part 62 is vertically moved up and down to support the supporting plate 110 so that the supporting plate 110 and the substrate W fixed thereon can be heated by the heating part 20 And between the heating position in the vicinity and the cooling position in contact with the cooling section (50).

상기 승강핀(63)은 지지플레이트(110)를 관통하여 승강되도록 구비되며, 후술되는 클램핑수단(150)이 열린 상태와 닫힌 상태로 전환되도록 하기 위한 기능을 하며, 그 구성 및 작용은 후술하기로 한다.The lifting pin 63 is provided to move up and down through the support plate 110 and functions to switch a clamping unit 150, which will be described later, into an open state and a closed state. do.

이하, 본 발명의 제1실시예에 따른 기판지지장치(100)의 구성 및 작용을 설명한다.The structure and operation of the substrate supporting apparatus 100 according to the first embodiment of the present invention will be described below.

도 1 내지 도 4를 참조하면, 본 발명의 기판지지장치(100)는, 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서, 상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110)와, 상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120)를 포함하여 구성된다. 또한 상기 지지플레이트(110) 상에는 진공이 인가되어 기판을 흡착하기 위한 단열 소재로 이루어진 다수개의 진공컵(130)이 소정간격으로 이격되어 구비된다. Referring to FIGS. 1 to 4, the substrate supporting apparatus 100 of the present invention can be used for fixing a substrate of an epoxy molding compound (EMC) material during a reflow process for manufacturing a single chip system (SoC) A substrate supporting apparatus comprising: a support plate (110) which is provided in a chamber in which a substrate is heat-treated and is capable of being elevated and supported for supporting the substrate; And a plurality of substrate supporting members 120 made of a heat insulating material for supporting the substrate in place and for blocking heat transfer between the heat treated substrate and the supporting plate 110. Also, on the support plate 110, a plurality of vacuum cups 130, which are made of a heat insulating material for vacuuming the substrate, are spaced apart from each other by a predetermined distance.

따라서, 기판(W)의 저면은 기판지지부재(120)와 진공컵(130)의 상단에 접촉되고, 상기 기판지지부재(120)와 진공컵(130)이 단열 소재로 이루어짐으로써, 기판(W)과 지지플레이트(110) 간의 열전달이 차단되어 가열처리된 기판(W)의 열손실을 방지할 수 있다. 이에 따라, 가열처리된 기판(W)의 상면과 저면 간의 온도가 균일하게 유지될 수 있어 온도차가 발생할 경우에 초래될 수 있는 기판의 휨 현상을 방지할 수 있다.The bottom surface of the substrate W is in contact with the top of the vacuum chamber 120 and the vacuum cup 130. The substrate support member 120 and the vacuum cup 130 are made of a heat insulating material, ) And the support plate 110 is blocked to prevent heat loss of the heat-treated substrate W. Accordingly, the temperature between the upper surface and the lower surface of the heated substrate W can be uniformly maintained, thereby preventing the substrate from being warped, which may be caused when a temperature difference occurs.

일실시예로, 상기 기판지지부재(120)와 진공컵(130)를 구성하는 단열 소재는, PEEK(Polyether ether ketone), 고강도 플라스틱, 플라비스(Plasvis), 테프론(Teflon) 중 어느 하나로 이루어질 수 있다. 다만, 단열 소재는 이러한 실시예들에 한정되는 것은 아니며, 공지된 다양한 종류의 단열 소재로 대체될 수 있다.The heat insulating material constituting the substrate support member 120 and the vacuum cup 130 may be any one of PEEK (polyether ether ketone), high strength plastic, Plasvis, and Teflon. have. However, the heat insulating material is not limited to these embodiments, and may be replaced with various kinds of known heat insulating materials.

상기 지지플레이트(110)는, 중앙부(111)와, 상기 중앙부(111)의 둘레에 동심 구조로 구비된 복수의 원형부(112;112a,112b)와, 상기 중앙부(111)와 복수의 원형부(112;112a,112b)를 연결하며 방사상으로 구비되는 복수의 연결부(113;113a,113b)와, 상기 연결부(113;113a)의 사이사이에 위치하도록 상기 중앙부(111)에서 방사상으로 연장된 다수개의 연장부(114), 및 상기 지지플레이트(110)의 테두리부에 원주방향을 따라 소정간격으로 이격되어 형성된 다수개의 돌출부(115)로 구성된다.The support plate 110 includes a central portion 111 and a plurality of circular portions 112a and 112b concentrically formed around the central portion 111. The center portion 111 and the plurality of circular portions 112a and 112b, A plurality of radial connection portions 113 113a and 113b connecting the connection portions 113 and 113a and a plurality of radially extending portions 113 and 113a located between the connection portions 113 and 113a, And a plurality of protrusions 115 spaced at predetermined intervals along the circumferential direction on the rim portion of the support plate 110. [

일실시예로, 상기 기판지지부재(120)는 상기 원형부(112;112b)와 연결부(113;113b) 및 연장부(114) 상에 배치될 수 있고, 상기 진공컵(130)은 상기 중앙부(111)와 원형부(112;112a) 및 연결부(113;113a) 상에 배치될 수 있다.In one embodiment, the substrate support member 120 may be disposed on the circular portions 112 and 112b, the connection portions 113 and 113b, and the extension portion 114, 112a and the connecting portions 113, 113a, respectively.

상기 중앙부(111)와 원형부(112;112a) 및 연결부(113;113a)의 내부에는 상기 다수개의 진공컵(130)에 진공을 인가하기 위한 진공라인(미도시됨)이 연결된다.Vacuum lines (not shown) for applying vacuum to the plurality of vacuum cups 130 are connected to the inside of the central part 111, the circular part 112, and the connection part 113, 113a.

한편, 상기 지지플레이트(110)의 돌출부(115) 상에는 원형의 링플레이트(140)가 결합되고, 상기 링플레이트(140) 상에는 다수개의 클램핑수단(150;150-1)과 기판가이드부(160)가 구비된다.A circular ring plate 140 is coupled to the protrusion 115 of the support plate 110 and a plurality of clamping means 150 and a substrate guide 160 are formed on the ring plate 140. [ .

상기 클램핑수단(150;150-1)과 기판가이드부(160)는, 링플레이트(140) 상에 원주방향을 따라 소정 각도로 이격되도록 배치될 수 있으며, 일실시예로 두 개의 클램핑수단(150;150-1) 사이에 한 개의 기판가이드부(160)가 배치되고, 이러한 두 개의 클램핑수단(150;150-1)과 한 개의 기판가이드부(160)의 조합이 원주방향으로 이격된 위치에 복수로 배치되도록 구성할 수 있다.The clamping unit 150-1 and the substrate guide unit 160 may be disposed at a predetermined angle along the circumferential direction on the ring plate 140. In one embodiment, 150-1 and a combination of the two clamping means 150 and the one substrate guide 160 are spaced apart from each other in the circumferential direction It is possible to arrange them in plural.

상기 클램핑수단(150)은 지지플레이트(110) 상에 안착된 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하여 상기 기판을 고정 지지하는 기능을 하고, 상기 기판가이드부(160)는 지지플레이트(110) 상에 안착된 기판의 외측단을 지지하여 기판의 측방향 유동을 방지하는 기능을 한다.The clamping unit 150 functions to press the edge of the substrate placed on the support plate 110 toward the support plate 110 to securely support the substrate and the substrate guide unit 160 is supported by the support plate 110 110 to prevent the lateral flow of the substrate.

상기 클램핑수단(150;150-1)은, 지지플레이트(110)에 힌지 결합되어 회전 가능하도록 구비되어 상기 지지플레이트(110) 상에 안착되는 기판(W)의 테두리부를 지지플레이트(110) 측으로 가압하는 누름판(151)과, 상기 누름판(151)을 지지플레이트(110)를 향하는 방향으로 탄성지지하는 탄성부재(154)를 포함하고, 상기 누름판(151)은 지지플레이트(110)를 관통하여 승강 가능하도록 구비되는 승강핀(63)에 연동하여 힌지축(152)을 중심으로 상하로 회전 가능하도록 구비된다.The clamping unit 150-1 is hinged to the support plate 110 so as to be rotatable so that the rim of the substrate W mounted on the support plate 110 is pressed toward the support plate 110 And an elastic member 154 for elastically supporting the pressing plate 151 in a direction toward the supporting plate 110. The pressing plate 151 is movable up and down through the supporting plate 110 And is vertically rotatable about a hinge shaft 152 in cooperation with a lifting pin 63 provided to rotate the hinge shaft 152. [

상기 누름판(151)의 하단부는 지지플레이트(110)의 가장자리부에 장착되는 고정블록(153)에 양단이 결합되는 힌지축(152)에 결합된다.The lower end of the pressure plate 151 is coupled to a hinge shaft 152 to which both ends are coupled to a fixing block 153 mounted on an edge of the support plate 110.

상기 탄성부재(154)는 상기 힌지축(152)의 둘레에 결합되고 상기 지지플레이트(110)의 상면과 상기 누름판(151)의 일측면에 양단이 지지되는 토션스프링으로 구성될 수 있다. The elastic member 154 may be composed of a torsion spring which is coupled to the hinge shaft 152 and has both ends thereof supported on the upper surface of the support plate 110 and one side surface of the pressure plate 151.

도 2와 도 3에 도시된 바와 같이, 지지플레이트(110) 상에 기판(W)이 안착되기 전 상태에서는 승강핀(63)이 상승함에 따라 누름판(151)이 상측으로 들어 올려져 열린 상태가 되고, 도 4에 도시된 바와 같이 지지플레이트(110) 상에 기판(W)이 안착된 후에는 승강핀(63)이 하강함에 따라 누름판(151)이 탄성부재(154)의 탄성력에 의해 하측으로 회전되어 지지플레이트(110) 상에 안착된 기판(W)의 테두리부를 지지플레이트(110) 측으로 가압시켜 고정하게 된다.2 and 3, in a state before the substrate W is placed on the support plate 110, the push plate 151 is lifted upwards as the lift pins 63 are lifted, 4, after the substrate W is mounted on the support plate 110, the pushing plate 151 is moved downward by the elastic force of the elastic member 154 as the lift pin 63 is lowered The edge of the substrate W mounted on the support plate 110 is rotated and fixed to the support plate 110 side.

상기 기판가이드부(160)는, 상기 링플레이트(140) 상에 결합되는 몸체(161)와, 상기 몸체(161)의 일측면에서 지지플레이트(110)의 중앙을 향하는 방향으로 소정길이 돌출되어 기판(W)의 외측단을 지지하는 가이드돌기(162)로 이루어진다.The substrate guide part 160 includes a body 161 coupled to the ring plate 140 and a guide part 160 protruding a predetermined length in a direction toward the center of the support plate 110 from one side of the body 161, And a guide protrusion 162 for supporting the outer end of the wobble W.

상기와 같이 구성된 기판지지장치(100)는, 열처리 공정 후 기판(W)을 지지한 상태에서 하강하여 냉각부(50) 상에 안착되어 냉각 공정이 수행된다.The substrate supporting apparatus 100 configured as described above is lowered while supporting the substrate W after the heat treatment process, is placed on the cooling unit 50, and the cooling process is performed.

도 5와 도 6을 참조하면, 상기 냉각부(50)는, 기판(W)과 기판지지장치(100)가 안착되어 냉각 처리가 수행될 수 있도록 하는 구성으로서, 하우징(56)의 내측에 상기 지지플레이트(110)의 중앙부(111)와 원형부(112)와 연결부(113) 및 연장부(114)가 각각 삽입되어 안착되는 중앙홈(51)과 원형홈(52;52a,52b)과 연결홈(53;53a,53b) 및 연장홈(54)과, 전술한 리프트핀(61)이 관통하는 관통홀(55a)이 형성된 냉각판(55)을 포함하여 구성된다.5 and 6, the cooling unit 50 has a structure in which the substrate W and the substrate supporting apparatus 100 are seated and subjected to a cooling process, The central groove 51 and the circular groove 52 (52a, 52b), in which the central portion 111, the circular portion 112, the connecting portion 113 and the extending portion 114 of the support plate 110 are inserted, And a cooling plate 55 in which grooves 53 (53a and 53b) and extending grooves 54 and through holes 55a through which the lift pins 61 described above are formed are formed.

상기 중앙홈(51)과 원형홈(52;52a,52b)과 연결홈(53;53a,53b) 및 연장홈(54)의 깊이는, 각각 상기 지지플레이트(110)와 기판지지부재(120)가 결합된 높이, 및 상기 지지플레이트(110)와 진공컵(130)이 결합된 높이와 동일한 길이로 형성된다.The depths of the center groove 51 and the circular grooves 52 and 52a and 52b and the connecting grooves 53 and 53a and 53b and the extending grooves 54 are set such that the distance between the support plate 110 and the substrate support member 120, And the height of the support plate 110 and the vacuum cup 130 are the same.

따라서, 상기 기판지지장치(100)가 냉각부(50) 상에 안착되는 경우, 기판지지장치(100)의 기판지지부재(120)와 진공컵(130) 상에 안착된 기판(W)의 저면은 냉각판(55)의 상면에 접촉되고, 상기 지지플레이트(110)는 냉각판(55)에 형성된 중앙홈(51)과 원형홈(52;52a,52b)과 연결홈(53;53a,53b) 및 연장홈(54)의 바닥면에 접촉되어, 기판(W)과 지지플레이트(110)의 냉각 처리를 효율적으로 수행할 수 있다.Therefore, when the substrate supporting apparatus 100 is placed on the cooling unit 50, the substrate supporting member 120 of the substrate supporting apparatus 100 and the bottom surface of the substrate W placed on the vacuum cup 130 The support plate 110 is in contact with the upper surface of the cooling plate 55 and the center groove 51 and the circular grooves 52 and 52a and 52b formed in the cooling plate 55 and the connection grooves 53 and 53a and 53b And the bottom surface of the elongated groove 54 so that the cooling processing of the substrate W and the support plate 110 can be performed efficiently.

이하, 도 7 내지 도 11을 참조하여, 본 발명의 제2실시예에 따른 기판지지장치(100)의 구성 및 작용을 설명하되, 전술한 제1실시예와 동일한 부재에는 동일한 도면부호를 부여하고, 그에 대한 중복되는 설명은 생략하기로 한다.Hereinafter, the configuration and operation of the substrate supporting apparatus 100 according to the second embodiment of the present invention will be described with reference to FIGS. 7 to 11, and the same reference numerals are given to the same members as those of the above- , And redundant explanations thereof will be omitted.

본 발명의 제2실시예에 따른 기판지지장치(100)는, 제1실시예와 비교하여 링플레이트(140)의 구성을 생략하고, 지지플레이트(110)의 돌출부(115) 상에 지지블록(155)을 매개로 클램핑수단(150;150-2)이 결합되고, 상기 돌출부(115)에는 승강핀(63)이 상하로 관통하여 이동될 수 있도록 관통홀(115a)이 형성된 점에서 차이가 있으며, 기타의 구성은 제1실시예와 동일하게 구성될 수 있다.The substrate supporting apparatus 100 according to the second embodiment of the present invention is different from the first embodiment in that the structure of the ring plate 140 is omitted and the supporting block 110 And a through hole 115a is formed in the protrusion 115 so that the lifting pin 63 can be moved up and down through the clamping unit 150 , And other configurations may be configured in the same manner as in the first embodiment.

상기 돌출부(115) 상에는 지지블록(155)이 결합되고, 상기 지지블록(155) 상에는 클램핑수단(150;150-2)의 고정블록(153)이 결합된다.A supporting block 155 is coupled to the protruding portion 115 and a fixing block 153 of the clamping means 150 and 150-2 is coupled to the supporting block 155.

그리고, 도 11에 도시된 바와 같이, 상기 돌출부(115) 상에는 상기 클램핑수단(150;150-2)의 높낮이를 조절하기 위해 서로 다른 두께를 가지며 교체 설치 가능한 스페이서(156;156-1,156-2)가 구비될 수 있다. As shown in FIG. 11, spacers 156 (156-1, 156-2) having different thicknesses and being replaceable to adjust the height of the clamping means 150 (150-2) are formed on the protrusions 115, May be provided.

따라서, 도 11의 (a)와 (b)에 도시된 바와 같이 처리 대상 기판(W,W')의 두께에 대응하여 상기 스페이서(156;156-1,156-2)를 교체하여 설치함으로써, 클램핑수단(150;150-2)의 높낮이를 조절할 수 있다.Therefore, as shown in FIGS. 11A and 11B, the spacers 156 (156-1 and 156-2) are replaced by the corresponding thicknesses of the substrates W and W ' (150; 150-2).

상기와 같이 본 발명에 따른 기판지지장치(100)의 구성에 의하면, 기판을 지지하는 지지플레이트(110) 상에 단열 소재로 이루어진 기판지지부재(120)와 진공컵(130)을 구비하고, 지지플레이트(110)의 가장자리부에는 클램팽수단(150)을 구비하여 기판의 테두리부를 고정 지지하도록 구성함으로써, 에폭시 몰딩 컴파운드 재질로 이루어진 기판의 휨 현상을 효과적으로 방지하고, 기판의 온도를 일정하게 유지시켜 기판의 가열 속도(Ramp up speed)를 증대시키고 기판의 가열 시간을 단축할 수 있게 되며, 이로써 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정의 불량률을 감소시킬 수 있다.As described above, according to the structure of the substrate supporting apparatus 100 of the present invention, the substrate supporting member 120 and the vacuum cup 130, which are made of a heat insulating material, and the vacuum cup 130 are provided on the supporting plate 110 supporting the substrate, The edge of the plate 110 is provided with the clamping means 150 so as to fix the edge of the substrate fixedly, thereby effectively preventing the substrate made of the epoxy molding compound material from being bent and maintaining the temperature of the substrate constant It is possible to increase the heating speed (ramp up speed) of the substrate and shorten the heating time of the substrate, thereby reducing the defective rate of the reflow process for manufacturing a single chip system (SoC).

이상 설명한 바와 같이, 본 발명은 상술한 실시예에 한정되지 아니하며, 청구범위에서 청구되는 본 발명의 기술적 사상에 벗어남 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 자명한 변형실시가 가능하며, 이러한 변형실시는 본 발명의 범위에 속한다.As described above, the present invention is not limited to the above-described embodiments, and various changes and modifications may be made without departing from the scope of the present invention as defined in the appended claims. And such modifications are within the scope of the present invention.

1 : 기판처리장치 10 : 챔버
11 : 도어 20 : 가열부
30 : 샤워헤드 31 : 분사홀
40 : 가스공급부 50 : 냉각부
60 : 승강구동부 61 : 리프트핀
62 : 승강지지부 63 : 승강핀
70 : 배기부 100 : 기판지지장치
110 : 지지플레이트 111 : 중앙부
112 : 원형부 113 : 연결부
114 : 연장부 115 : 돌출부
115a : 승강핀 관통홀 120 : 기판지지부재
130 : 진공컵 140 : 링플레이트
150 : 클램핑수단 151 : 누름판
152 : 힌지축 153 : 고정블록
154 : 탄성부재 155 : 지지블록
156 : 스페이서 160 : 기판가이드부
161 : 몸체 162 : 가이드돌기
W : 기판1: substrate processing apparatus 10: chamber
11: door 20: heating part
30: shower head 31: injection hole
40: gas supply part 50: cooling part
60: lifting opening 61: lift pin
62: a lifting / supporting part 63: a lifting pin
70: exhaust part 100: substrate holding device
110: support plate 111:
112: circular portion 113: connection portion
114: extension part 115:
115a: lift pin through hole 120: substrate support member
130: vacuum cup 140: ring plate
150: clamping means 151:
152: hinge shaft 153: fixed block
154: elastic member 155: support block
156: spacer 160: substrate guide portion
161: body 162: guide projection
W: substrate

Claims (14)

단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서,
상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110);
상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120);를 포함하되,
상기 지지플레이트(110) 상에는, 진공이 인가되어 상기 기판을 흡착하기 위한 단열 소재로 이루어진 다수개의 진공컵(130)이 소정간격으로 이격되어 구비되고,
상기 지지플레이트(110)의 가장자리부에는, 상기 지지플레이트(110) 상에 안착된 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하여 상기 기판을 고정 지지하기 위한 다수개의 클램핑수단(150)이 소정간격으로 이격되어 구비되며,
상기 클램핑수단(150)은,
상기 지지플레이트(110)에 힌지 결합되어 회전 가능하도록 구비되어 상기 지지플레이트(110) 상에 안착되는 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하는 누름판(151)과,
상기 누름판(151)을 상기 지지플레이트(110)를 향하는 방향으로 탄성지지하는 탄성부재(154)를 포함하되,
상기 누름판(151)은 상기 지지플레이트(110)를 관통하여 승강 가능하도록 구비되는 승강핀(63)에 연동하여 힌지축(152)을 중심으로 상하로 회전되는 것을 특징으로 하는 기판지지장치.A substrate support apparatus for holding and supporting a substrate of an epoxy molding compound (EMC) material during a reflow process for manufacturing a single chip system (SoC)
A support plate (110) provided on the inside of the chamber in which the substrate is heat-treated, for supporting the substrate;
A plurality of substrate support members spaced apart from each other by a predetermined distance on the support plate 110 and made of a heat insulating material to support the substrate and to prevent heat transfer between the heat treated substrate and the support plate 110; 120, < / RTI >
On the support plate 110, a plurality of vacuum cups 130, which are made of a heat insulating material for vacuuming and attracting the substrate, are spaced apart at predetermined intervals,
A plurality of clamping means 150 for pressing and supporting the edge of the substrate placed on the support plate 110 toward the support plate 110 to fix and support the substrate is formed at the edge of the support plate 110, Spaced apart from each other,
The clamping means (150)
A pressing plate 151 hinged to the supporting plate 110 to be rotatable and pressing the rim of the substrate mounted on the supporting plate 110 toward the supporting plate 110;
And an elastic member (154) elastically supporting the pressure plate (151) in a direction toward the support plate (110)
Wherein the presser plate (151) is vertically rotated about a hinge shaft (152) in cooperation with a lift pin (63) provided to be able to move up and down through the support plate (110). 삭제delete 삭제delete 삭제delete 삭제delete 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서,
상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110);
상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120);를 포함하되,
상기 지지플레이트(110)는, 중앙부(111)와, 상기 중앙부(111)의 둘레에 동심 구조로 구비된 복수의 원형부(112)와, 상기 중앙부(111)와 복수의 원형부(112)를 연결하며 방사상으로 구비되는 복수의 연결부(113)를 포함하고,
상기 기판지지부재(120)는 상기 원형부(112)와 연결부(113) 상에 구비되며,
상기 중앙부(111)에는 상기 연결부(113)의 사이사이에 위치하도록 다수개의 연장부(114)가 방사상으로 연장 형성되고,
상기 연장부(114) 상에는 상기 기판지지부재(120)가 추가로 구비된 것을 특징으로 하는 기판지지장치.A substrate support apparatus for holding and supporting a substrate of an epoxy molding compound (EMC) material during a reflow process for manufacturing a single chip system (SoC)
A support plate (110) provided on the inside of the chamber in which the substrate is heat-treated, for supporting the substrate;
A plurality of substrate support members spaced apart from each other by a predetermined distance on the support plate 110 and made of a heat insulating material to support the substrate and to prevent heat transfer between the heat treated substrate and the support plate 110; 120, < / RTI >
The support plate 110 includes a central portion 111, a plurality of circular portions 112 concentrically formed around the central portion 111, and a plurality of circular portions 112, And a plurality of connection portions (113) radially provided,
The substrate support member 120 is provided on the circular portion 112 and the connection portion 113,
A plurality of extension portions 114 are radially extended from the center portion 111 to be located between the connection portions 113,
And the substrate support member (120) is further provided on the extension (114). 삭제delete 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서,
상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110);
상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120);를 포함하되,
상기 지지플레이트(110) 상에는, 진공이 인가되어 상기 기판을 흡착하기 위한 단열 소재로 이루어진 다수개의 진공컵(130)이 소정간격으로 이격되어 구비되고,
상기 지지플레이트(110)는, 중앙부(111)와, 상기 중앙부(111)의 둘레에 동심 구조로 구비된 복수의 원형부(112)와, 상기 중앙부(111)와 복수의 원형부(112)를 연결하며 방사상으로 구비되는 복수의 연결부(113)를 포함하고,
상기 진공컵(130)은, 상기 중앙부(111)와 원형부(112) 및 상기 연결부(113) 상에 구비되며,
상기 중앙부(111)와 원형부(112) 및 연결부(113)의 내부에는 상기 다수개의 진공컵(130)에 진공을 인가하기 위한 진공라인이 연결된 것을 특징으로 하는 기판지지장치.A substrate support apparatus for holding and supporting a substrate of an epoxy molding compound (EMC) material during a reflow process for manufacturing a single chip system (SoC)
A support plate (110) provided on the inside of the chamber in which the substrate is heat-treated, for supporting the substrate;
A plurality of substrate support members spaced apart from each other by a predetermined distance on the support plate 110 and made of a heat insulating material to support the substrate and to prevent heat transfer between the heat treated substrate and the support plate 110; 120, < / RTI >
On the support plate 110, a plurality of vacuum cups 130, which are made of a heat insulating material for vacuuming and attracting the substrate, are spaced apart at predetermined intervals,
The support plate 110 includes a central portion 111, a plurality of circular portions 112 concentrically formed around the central portion 111, and a plurality of circular portions 112, And a plurality of connection portions (113) radially provided,
The vacuum cup 130 is provided on the central portion 111, the circular portion 112, and the connecting portion 113,
Wherein a vacuum line for applying a vacuum to the plurality of vacuum cups 130 is connected to the inside of the central part 111, the circular part 112, and the connection part 113. 삭제delete 삭제delete 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서,
상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110);
상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120);를 포함하되,
상기 지지플레이트(110) 상에는, 진공이 인가되어 상기 기판을 흡착하기 위한 단열 소재로 이루어진 다수개의 진공컵(130)이 소정간격으로 이격되어 구비되고,
상기 지지플레이트(110)의 가장자리부에는, 상기 지지플레이트(110) 상에 안착된 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하여 상기 기판을 고정 지지하기 위한 다수개의 클램핑수단(150)이 소정간격으로 이격되어 구비되며,
상기 지지플레이트(110)의 테두리부에는 원주방향을 따라 소정간격으로 이격되어 다수개의 돌출부(115)가 형성되고,
상기 다수개의 돌출부(115) 상에는 링플레이트(140)가 결합되며,
상기 링플레이트(140) 상에는 상기 다수개의 클램핑수단(150)이 구비되고,
상기 링플레이트(140) 상에는 인접하게 배치되는 상기 클램핑수단(150)의 사이에 구비되어 상기 기판의 외측단을 지지하여 기판의 측방향 유동을 방지하기 위한 다수개의 기판가이드부(160)가 구비되며,
상기 기판가이드부(160)는,
상기 링플레이트(140) 상에 결합되는 몸체(161)와, 상기 몸체(161)의 일측면에서 상기 지지플레이트(110)의 중앙을 향하는 방향으로 소정길이 돌출되어 상기 기판의 외측단을 지지하는 가이드돌기(162)로 이루어진 것을 특징으로 하는 기판지지장치.A substrate support apparatus for holding and supporting a substrate of an epoxy molding compound (EMC) material during a reflow process for manufacturing a single chip system (SoC)
A support plate (110) provided on the inside of the chamber in which the substrate is heat-treated, for supporting the substrate;
A plurality of substrate support members spaced apart from each other by a predetermined distance on the support plate 110 and made of a heat insulating material to support the substrate and to prevent heat transfer between the heat treated substrate and the support plate 110; 120, < / RTI >
On the support plate 110, a plurality of vacuum cups 130, which are made of a heat insulating material for vacuuming and attracting the substrate, are spaced apart at predetermined intervals,
A plurality of clamping means 150 for pressing and supporting the edge of the substrate placed on the support plate 110 toward the support plate 110 to fix and support the substrate is formed at the edge of the support plate 110, Spaced apart from each other,
A plurality of protrusions 115 are formed at the rim of the support plate 110 at predetermined intervals along the circumferential direction,
A ring plate 140 is coupled to the plurality of protrusions 115,
The ring plate 140 is provided with the plurality of clamping means 150,
On the ring plate 140, a plurality of substrate guide portions 160 are provided between the clamping means 150 disposed adjacent to each other to support the outer end of the substrate to prevent lateral movement of the substrate ,
The substrate guide portion 160 is formed of,
A body 161 protruding a predetermined length in a direction toward the center of the support plate 110 at one side of the body 161 and supporting the outer end of the substrate 161, And a projection (162). 삭제delete 단일 칩 시스템(SoC)의 제조를 위한 리플로우 공정 시, 에폭시 몰딩 컴파운드(EMC) 재질의 기판을 고정시켜 지지하기 위한 기판지지장치로서,
상기 기판이 열처리되는 챔버의 내부에 승강 가능하게 구비되고, 상기 기판을 지지하기 위한 지지플레이트(110);
상기 지지플레이트(110) 상에 소정간격으로 이격되어 구비되고, 상기 기판이 안착되어 지지됨과 아울러 열처리된 기판과 상기 지지플레이트(110) 간의 열전달을 차단하기 위한 단열 소재로 이루어진 다수개의 기판지지부재(120);를 포함하되,
상기 지지플레이트(110) 상에는, 진공이 인가되어 상기 기판을 흡착하기 위한 단열 소재로 이루어진 다수개의 진공컵(130)이 소정간격으로 이격되어 구비되고,
상기 지지플레이트(110)의 가장자리부에는, 상기 지지플레이트(110) 상에 안착된 기판의 테두리부를 상기 지지플레이트(110) 측으로 가압하여 상기 기판을 고정 지지하기 위한 다수개의 클램핑수단(150)이 소정간격으로 이격되어 구비되며,
상기 지지플레이트(110)의 테두리부에는 원주방향을 따라 소정간격으로 이격되어 다수개의 돌출부(115)가 형성되고,
상기 다수개의 돌출부(115) 상에는 상기 다수개의 클램핑수단(150)이 구비되며,
상기 돌출부(115) 상에는 상기 클램핑수단(150)의 높낮이를 조절하기 위해 서로 다른 두께를 가지며 교체 설치 가능한 스페이서(156)가 구비된 것을 특징으로 하는 기판지지장치.A substrate support apparatus for holding and supporting a substrate of an epoxy molding compound (EMC) material during a reflow process for manufacturing a single chip system (SoC)
A support plate (110) provided on the inside of the chamber in which the substrate is heat-treated, for supporting the substrate;
A plurality of substrate support members spaced apart from each other by a predetermined distance on the support plate 110 and made of a heat insulating material to support the substrate and to prevent heat transfer between the heat treated substrate and the support plate 110; 120, < / RTI >
On the support plate 110, a plurality of vacuum cups 130, which are made of a heat insulating material for vacuuming and attracting the substrate, are spaced apart at predetermined intervals,
A plurality of clamping means 150 for pressing and supporting the edge of the substrate placed on the support plate 110 toward the support plate 110 to fix and support the substrate is formed at the edge of the support plate 110, Spaced apart from each other,
A plurality of protrusions 115 are formed at the rim of the support plate 110 at predetermined intervals along the circumferential direction,
The plurality of clamping units 150 are provided on the plurality of protrusions 115,
Characterized in that spacers (156) are provided on the protrusions (115) and have different thicknesses and are interchangeable to adjust the height of the clamping means (150). 제1항, 제6항, 제8항, 제11항, 제13항 중 어느 한 항에 있어서,
상기 단열 소재는, PEEK, 고강도 플라스틱, 플라비스, 테프론 중 어느 하나인 것을 특징으로 하는 기판지지장치.The method according to any one of claims 1, 6, 8, 11, and 13,
Wherein the heat insulating material is any one of PEEK, high-strength plastic, plastic, and Teflon.
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