TWI613754B - Substrate holding apparatus - Google Patents
Substrate holding apparatus Download PDFInfo
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- TWI613754B TWI613754B TW105123969A TW105123969A TWI613754B TW I613754 B TWI613754 B TW I613754B TW 105123969 A TW105123969 A TW 105123969A TW 105123969 A TW105123969 A TW 105123969A TW I613754 B TWI613754 B TW I613754B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
- B23K3/087—Soldering or brazing jigs, fixtures or clamping means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
本發明公開一種基板支撐裝置，其目的在於，在執行用於利用環氧樹脂模塑膠(EMC)材質的基板而製作單晶片系統(SoC)的回流焊製程時，最小化基板和支撐基板的支撐板之間的熱傳遞引起的熱損失，從而防止由基板的翹曲現象引起的製程不良。為了實現上述目的，本發明的基板支撐裝置在進行用於製造單晶片系統(SoC)的回流焊製程時固定支撐環氧樹脂模塑膠材質的基板，其中包括：支撐板，可升降地配備於對基板進行熱處理的腔室的內部，並用於支撐基板；複數個基板支撐部件，在支撐板上相隔預定間距而配備，並由隔熱材料形成，以用於使基板被放置而得到支撐的同時阻斷被熱處理的基板和支撐板之間的熱傳遞。 The invention discloses a substrate supporting device, which aims to minimize the support of a substrate and a supporting substrate when performing a reflow soldering process for manufacturing a single-chip system (SoC) using a substrate made of epoxy molding compound (EMC). Heat loss caused by heat transfer between the plates, thereby preventing process defects caused by the warpage of the substrate. In order to achieve the above object, the substrate supporting device of the present invention fixedly supports a substrate made of epoxy resin molding material during a reflow process for manufacturing a single-chip system (SoC). The substrate supporting device includes: a supporting plate, which is liftably provided on The inside of the chamber in which the substrate is heat-treated is used to support the substrate; a plurality of substrate support members are provided at a predetermined distance from the support plate, and are formed of a heat-insulating material to prevent the substrate from being placed to be supported while being supported The heat transfer between the heat-treated substrate and the support plate is interrupted.
Description
本發明提供一種基板支撐裝置，尤其提供一種在進行用於利用環氧樹脂模塑膠(EMC)材質的基板而製造單晶片系統(SoC)的回流焊製程時，防止隨著基板的熱損失而引起的翹曲現象的基板支撐裝置。 The present invention provides a substrate supporting device, and in particular, it provides a method for preventing a substrate from being caused by heat loss during a reflow process for manufacturing a single-chip system (SoC) using a substrate made of epoxy resin molding material (EMC). Warping phenomenon of the substrate support device.
半導體封裝技術作為用於半導體產品的大容量化和高性能化的手段而得到應用，在這種半導體封裝製程中，將形成用於電連接貼裝半導體的基板或者彼此不同的半導體之間的凸塊球(bumping ball)的製程稱為回流焊(Reflow)製程。 Semiconductor packaging technology is used as a means for increasing the capacity and performance of semiconductor products. In this semiconductor packaging process, substrates for electrically connecting mounted semiconductors or bumps between different semiconductors are formed. The process of bumping ball is called the reflow process.
習知回流焊製程中使用的基板由矽(Si)材質構成，因此可以用普通的真空吸盤也可以充分地固定基板而進行製程。 The substrate used in the conventional reflow soldering process is made of silicon (Si) material. Therefore, the substrate can be fully fixed with an ordinary vacuum chuck and processed.
但是，在製造高度集成化到一個積體電路的單晶片系統(SoC；System On Chip)的情況下，利用環氧樹脂模塑膠(EMC；Epoxy Molding Compound)材質的基板而進行回流焊製程，而不是利用習知的矽基板進行回流焊製程，且上述回流焊製程大約在250℃的高溫狀態下進行，由於環氧樹脂模塑膠材質的基板具有熱膨脹率大的特性，因此 在進行回流焊製程時，在基板產生翹曲(Warpage)現象，在此情況下，如果無法穩定地固定支撐基板，則會導致嚴重的製程不良。 However, in the case of manufacturing a system-on-chip (SoC) that is highly integrated into an integrated circuit, a substrate made of epoxy molding compound (EMC) is used for the reflow soldering process, and It is not a reflow process using a conventional silicon substrate, and the reflow process is performed at a high temperature of about 250 ° C. Since the substrate made of epoxy resin molding material has a large thermal expansion rate, When the reflow process is performed, a warpage phenomenon occurs on the substrate. In this case, if the support substrate cannot be stably fixed, serious process defects may result.
並且，在進行回流焊製程時，如果被加熱的基板和基板被放置而得到支撐的構造物之間因熱傳遞而產生基板的熱損失，則在基板的上表面和底面之間產生溫度差，從而會導致基板的翹曲現象。 In addition, during the reflow process, if a substrate loses heat due to heat transfer between the heated substrate and the structure on which the substrate is placed to be supported, a temperature difference occurs between the upper surface and the bottom surface of the substrate. This will cause warping of the substrate.
習知的基板處理製程中，與用於固定支撐基板的裝置相關的習知技術有韓國授權專利第10-1501171號(回流焊處理單元)，其中公開了可以使用借助於真空壓而吸附基板的真空吸盤，或者機械夾持部或靜電吸盤的通常的技術內容。 In the conventional substrate processing process, there is a Korean authorized patent No. 10-1501171 (reflow soldering processing unit) related to a known technique related to a device for fixing a substrate, which discloses that a substrate that can be adsorbed by means of vacuum pressure can be used. The general technical content of vacuum chucks, or mechanical grips or electrostatic chucks.
作為另一習知技術，韓國授權專利第10-0645647號(柔性基板用夾具)中公開了在搬運夾具的上表面利用被鉸鏈驅動的按壓板以不下垂的狀態固定柔性基板的結構。 As another conventional technique, Korean Granted Patent No. 10-0645647 (flexible substrate jig) discloses a structure in which a flexible substrate is fixed on a top surface of a conveying jig with a pressing plate driven by a hinge without sagging.
在習知技術中記載了利用機械夾持或真空吸附力而固定支撐基板的內容，但是沒有提出如下的構成：該構成在如利用環氧樹脂模塑膠材質的基板的回流焊製程等容易因熱膨脹而產生嚴重的基板翹曲的情況下，能夠藉由防止基板的熱損失並牢固地固定支撐基板而防止隨著基板的翹曲現象引起的製程不良。 The conventional technology describes the use of mechanical clamping or vacuum suction to fix a support substrate, but does not propose a structure that is susceptible to thermal expansion during reflow soldering processes such as substrates made of epoxy resin molded plastic. When severe substrate warpage occurs, it is possible to prevent process defects caused by the substrate warpage phenomenon by preventing the substrate from being thermally lost and firmly fixing the supporting substrate.
本發明為了解決上述問題而提出，其目的在於提供如下的基板支撐裝置：在執行用於利用環氧樹脂模塑膠(EMC)材質的基板而 製作單晶片系統(SoC)的回流焊製程時，最小化基板和支撐基板的支撐板之間的熱傳遞引起的熱損失，從而防止由基板的翹曲現象引起的製程不良。 The present invention has been made in order to solve the above problems, and an object thereof is to provide a substrate support device that executes a substrate using an epoxy resin molding compound (EMC) material. When making a single-chip system (SoC) reflow process, heat loss caused by heat transfer between the substrate and the support plate supporting the substrate is minimized, thereby preventing process defects caused by the warpage of the substrate.
本發明的基板支撐裝置100用於實現上述目的，其在進行用於製造單晶片系統SoC的回流焊製程時固定支撐環氧樹脂模塑膠EMC材質的基板，其中包括：支撐板110，可升降地配備於對基板進行熱處理的腔室的內部，並用於支撐基板；複數個基板支撐部件120，在支撐板110上相隔預定間距而配備，並由隔熱材料形成，以用於使基板被放置而得到支撐的同時阻斷被熱處理的基板和支撐板110之間的熱傳遞。 The substrate supporting device 100 of the present invention is used to achieve the above-mentioned object. It is used for fixing and supporting a substrate made of epoxy resin molding compound EMC material during a reflow process for manufacturing a single-chip system SoC. A plurality of substrate support members 120 are provided at a predetermined interval on the support plate 110 and are formed of a heat-insulating material for the substrate to be placed. While being supported, heat transfer between the heat-treated substrate and the support plate 110 is blocked.
較佳地，在支撐板110上可以以預定的間距相隔地配備有複數個真空杯130，複數個真空杯130由隔熱材料形成，以用於藉由施加真空而吸附基板。 Preferably, a plurality of vacuum cups 130 may be provided on the support plate 110 at predetermined intervals, and the plurality of vacuum cups 130 are formed of a heat-insulating material for adsorbing the substrate by applying a vacuum.
較佳地，在支撐板110的邊緣位置部，可以以預定的間距相隔地配備有複數個夾持單元150，夾持單元150用於向支撐板110側加壓被放置於支撐板110上的基板的邊緣部而固定支撐基板。 Preferably, at the edge position of the support plate 110, a plurality of clamping units 150 may be provided at a predetermined interval apart. The clamping units 150 are used to pressurize the support plate 110 to be placed on the support plate 110 An edge portion of the substrate is used to fix and support the substrate.
較佳地，夾持單元150可以包括：按壓板151，鉸鏈結合於支撐板110而可旋轉地配備於支撐板110，從而支撐板110側加壓被放置於支撐板110上的基板的邊緣部；彈性部件154，向朝支撐板110的方向彈性支撐按壓板151，其中，按壓板151可以與以能夠貫通支撐板110而進行升降的方式配備的升降銷63連動，從而以鉸鏈軸152為中心進行上下旋轉。 Preferably, the clamping unit 150 may include: a pressing plate 151, the hinge being coupled to the supporting plate 110 and rotatably provided on the supporting plate 110, so that the supporting plate 110 side presses the edge portion of the substrate placed on the supporting plate 110 ; The elastic member 154 elastically supports the pressing plate 151 in the direction of the supporting plate 110, wherein the pressing plate 151 can be linked with the lifting pin 63 provided so as to be capable of penetrating through the supporting plate 110, so as to be centered on the hinge shaft 152 Rotate up and down.
較佳地，支撐板110可以包括：中央部111；複數個圓形部112，在中央部111的周圍以同心的結構配備；複數個連接部113，連接中央部111和複數個圓形部112、112a、112b並配備成輻射狀，基板支撐部件120可以配備於圓形部112和連接部113上。 Preferably, the support plate 110 may include: a central portion 111; a plurality of circular portions 112 provided in a concentric structure around the central portion 111; a plurality of connecting portions 113 connecting the central portion 111 and the plurality of circular portions 112; , 112a, 112b are provided in a radial shape, and the substrate supporting member 120 may be provided on the circular portion 112 and the connecting portion 113.
較佳地，在中央部111可以以輻射狀延伸形成有延伸部114，該延伸部114位於連接部113之間，在延伸部114上還可以配備有基板支撐部件120。 Preferably, the central portion 111 may be formed with an extending portion 114 extending radially, and the extending portion 114 is located between the connecting portions 113. The extending portion 114 may further be provided with a substrate supporting member 120.
較佳地，支撐板110可以包括：中央部111；複數個圓形部112，在中央部111的周圍以同心的結構配備；複數個連接部113，連接中央部111和複數個圓形部112、112a、112b並配備成輻射狀，真空杯130可以配備於中央部111、圓形部112和連接部113上。 Preferably, the support plate 110 may include: a central portion 111; a plurality of circular portions 112 provided in a concentric structure around the central portion 111; a plurality of connecting portions 113 connecting the central portion 111 and the plurality of circular portions 112; , 112a, 112b are provided in a radial shape, and the vacuum cup 130 may be provided on the central portion 111, the circular portion 112, and the connecting portion 113.
較佳地，在中央部111、圓形部112和連接部113的內部可以連接有用於給複數個真空杯130施加真空的真空線。 Preferably, a vacuum line for applying a vacuum to the plurality of vacuum cups 130 may be connected to the inside of the central portion 111, the circular portion 112, and the connecting portion 113.
較佳地，在支撐板110的邊緣部可以沿著圓周方向相隔預定間距而形成有複數個突出部115，在複數個突出部115上結合有環板140，在環板140上配備有複數個夾持單元150。 Preferably, a plurality of protrusions 115 may be formed on the edge portion of the support plate 110 at a predetermined interval in the circumferential direction, a ring plate 140 is combined with the plurality of protrusions 115, and a plurality of ring plates 140 are provided on the ring plate 140. Clamping unit 150.
較佳地，在環板(140)上可以配備有複數個基板引導部160，複數個基板引導部160配備於相鄰地配置的夾持單元150之間，用於支撐基板的外側端而防止基板的側向遊動。 Preferably, the ring plate (140) may be provided with a plurality of substrate guides 160, and the plurality of substrate guides 160 are provided between the clamping units 150 disposed adjacently for supporting the outer end of the substrate and preventing The substrate swims sideways.
較佳地，基板引導部160可以包括：主體161，結合於環板140上；引導突起162，從主體161的一側面向朝支撐板110中央的方向突出預定長度而支撐基板的外側端。 Preferably, the substrate guide 160 may include: a main body 161 coupled to the ring plate 140; and a guide protrusion 162 protruding from a side of the main body 161 toward a center of the support plate 110 by a predetermined length to support the outer end of the substrate.
較佳地，在支撐板110的邊緣部可以沿著圓周方向相隔預定間距而形成有複數個突出部115，在複數個突出部115上可以配備有複數個夾持單元150。 Preferably, a plurality of protruding portions 115 may be formed on the edge portion of the support plate 110 at a predetermined interval along the circumferential direction, and a plurality of clamping units 150 may be provided on the plurality of protruding portions 115.
較佳地，在突出部115上可以配備有墊片156，墊片156具有彼此不同的厚度且能夠被交替設置以調節夾持單元150的高低。 Preferably, a spacer 156 may be provided on the protruding portion 115. The spacers 156 have different thicknesses from each other and can be alternately disposed to adjust the height of the clamping unit 150.
較佳地，隔熱材料可以是聚醚醚酮、高強度塑膠、聚醯亞胺、聚四氟乙烯中的其中一種。 Preferably, the heat insulation material may be one of polyetheretherketone, high-strength plastic, polyimide, and polytetrafluoroethylene.
根據本發明的基板支撐裝置具有以下效果：藉由在支撐基板的支撐板上配備由隔熱材料形成的基板支撐部件和真空杯，從而有效地防止基板和支撐板之間的熱傳遞引起的基板的熱損失，據此防止由環氧樹脂模塑膠形成的基板的翹曲現象，並使基板的溫度維持為恒定，從而可以增大基板的加熱速度，並縮短基板的加熱時間，據此可以減少用於製造單晶片系統(SoC)的回流焊製程的不良率。 The substrate supporting device according to the present invention has the effect of effectively preventing a substrate caused by heat transfer between the substrate and the supporting plate by equipping the supporting plate supporting the substrate with a substrate supporting member formed of a heat-insulating material and a vacuum cup. Heat loss of the substrate, thereby preventing warping of the substrate formed by the epoxy molding compound, and keeping the temperature of the substrate constant, thereby increasing the heating speed of the substrate and shortening the heating time of the substrate, thereby reducing the Defective rate of reflow soldering process for manufacturing single-chip system (SoC).
並且，藉由在支撐板的邊緣位置部配備用於向支撐板側加壓被放置於支撐板上的基板的邊緣部而固定支撐基板，並防止被放置的基板的位置脫離的夾持單元，從而可以有效地防止基板的翹曲現象。 Further, the edge position portion of the support plate is provided with a clamping unit for fixing the support substrate by pressing the edge portion of the substrate placed on the support plate toward the support plate side and preventing the position of the placed substrate from being detached. Therefore, the warping phenomenon of the substrate can be effectively prevented.
1‧‧‧基板處理裝置 1‧‧‧ substrate processing device
10‧‧‧腔室 10‧‧‧ chamber
11‧‧‧門 11‧‧‧ gate
100‧‧‧基板支撐裝置 100‧‧‧ substrate support device
110‧‧‧支撐板 110‧‧‧ support plate
111‧‧‧中央部 111‧‧‧ Central
112‧‧‧圓形部 112‧‧‧ round section
112a‧‧‧圓形部 112a‧‧‧round section
112b‧‧‧圓形部 112b‧‧‧ round section
113‧‧‧連接部 113‧‧‧Connection Department
113a‧‧‧連接部 113a‧‧‧connection
113b‧‧‧連接部 113b‧‧‧ Connection
114‧‧‧延伸部 114‧‧‧ extension
115‧‧‧突出部 115‧‧‧ protrusion
115a‧‧‧升降銷貫通孔 115a‧‧‧lift pin through hole
120‧‧‧基板支撐部件 120‧‧‧ Substrate support parts
130‧‧‧真空杯 130‧‧‧vacuum cup
140‧‧‧環板 140‧‧‧ ring plate
150‧‧‧夾持單元 150‧‧‧ clamping unit
150-1‧‧‧夾持單元 150-1‧‧‧Clamping unit
150-2‧‧‧夾持單元 150-2‧‧‧Clamping unit
151‧‧‧按壓板 151‧‧‧Pressing plate
152‧‧‧鉸鏈軸 152‧‧‧ hinge shaft
153‧‧‧固定塊 153‧‧‧Fixed block
154‧‧‧彈性部件 154‧‧‧Elastic parts
155‧‧‧支撐塊 155‧‧‧Support block
156‧‧‧墊片 156‧‧‧Gasket
156-1‧‧‧墊片 156-1‧‧‧Gasket
156-2‧‧‧墊片 156-2‧‧‧Gasket
160‧‧‧基板引導部 160‧‧‧ substrate guide
161‧‧‧主體 161‧‧‧Subject
162‧‧‧引導突起 162‧‧‧Guide protrusion
20‧‧‧加熱部 20‧‧‧Heating section
30‧‧‧噴頭 30‧‧‧ Nozzle
31‧‧‧噴射孔 31‧‧‧jet hole
40‧‧‧氣體供應部 40‧‧‧Gas Supply Department
50‧‧‧冷卻部 50‧‧‧cooling department
51‧‧‧中央槽 51‧‧‧ central trough
52‧‧‧圓形槽 52‧‧‧ round groove
52a‧‧‧圓形槽 52a‧‧‧round groove
52b‧‧‧圓形槽 52b‧‧‧round groove
53‧‧‧連接槽 53‧‧‧Connecting slot
53a‧‧‧連接槽 53a‧‧‧Connecting slot
53b‧‧‧連接槽 53b‧‧‧Connecting slot
54‧‧‧延伸槽 54‧‧‧ extension groove
55‧‧‧冷卻板 55‧‧‧ cooling plate
55a‧‧‧貫通孔 55a‧‧‧through hole
56‧‧‧殼體 56‧‧‧shell
60‧‧‧升降驅動部 60‧‧‧Elevation drive unit
61‧‧‧提升銷 61‧‧‧Upgraded
62‧‧‧升降支撐部 62‧‧‧ Lifting support
63‧‧‧升降銷 63‧‧‧lift pin
70‧‧‧排氣部 70‧‧‧Exhaust
W‧‧‧基板 W‧‧‧ substrate
W’‧‧‧基板 W’‧‧‧ substrate
S‧‧‧熱處理空間 S‧‧‧Heat treatment space
第1圖是概略地示出根據本發明的一實施例的包括基板支撐裝置的基板處理裝置的剖視圖。 FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus including a substrate supporting apparatus according to an embodiment of the present invention.
第2圖是示出根據本發明的第一實施例的基板處理裝置的開放狀態的立體圖。 FIG. 2 is a perspective view showing an opened state of the substrate processing apparatus according to the first embodiment of the present invention.
第3圖是示出根據本發明的第一實施例的基板處理裝置的開放狀態的平面圖。 FIG. 3 is a plan view showing an opened state of the substrate processing apparatus according to the first embodiment of the present invention.
第4圖是示出根據本發明的第一實施例的基板支撐裝置的關閉狀態的立體圖。 FIG. 4 is a perspective view showing a closed state of the substrate supporting device according to the first embodiment of the present invention.
第5圖是示出根據本發明的第一實施例的基板處理裝置中配備的冷卻部的立體圖。 Fig. 5 is a perspective view showing a cooling section provided in the substrate processing apparatus according to the first embodiment of the present invention.
第6圖是示出根據本發明的第一實施例的基板支撐裝置被置於冷卻部上的狀態的立體圖。 Fig. 6 is a perspective view showing a state where the substrate supporting device according to the first embodiment of the present invention is placed on a cooling section.
第7圖是示出根據本發明的第二實施例的基板支撐裝置的開放狀態的立體圖。 FIG. 7 is a perspective view showing an opened state of a substrate supporting device according to a second embodiment of the present invention.
第8圖是示出根據本發明的第二實施例的基板處理裝置的開放狀態的平面圖。 FIG. 8 is a plan view showing an open state of a substrate processing apparatus according to a second embodiment of the present invention.
第9圖是示出根據本發明的第二實施例的基板支撐裝置的關閉狀態的立體圖。 FIG. 9 is a perspective view showing a closed state of a substrate supporting device according to a second embodiment of the present invention.
第10圖是示出根據本發明的第二實施例的基板支撐裝置被置於冷卻部上的狀態的立體圖。 Fig. 10 is a perspective view showing a state where a substrate supporting device according to a second embodiment of the present invention is placed on a cooling section.
第11圖是用於說明夾持單元的高度調節作用的剖視圖。 Fig. 11 is a cross-sectional view for explaining the height adjustment effect of the clamping unit.
以下，參照圖式而對本發明的較佳實施例的構成和作用進行詳細說明。 Hereinafter, the structure and effect of the preferred embodiments of the present invention will be described in detail with reference to the drawings.
參照第1圖，應用本發明的基板處理裝置1是為了製造單晶片系統(SoC)而執行對環氧樹脂模塑膠(EMC；Epoxy Molding Compound)材質的基板W進行熱處理的回流焊(Reflow)製程的裝置，其中，包括：腔室10，在內部配備有對基板W進行熱處理的熱處理空間S，在一側配備有為了搬入/搬出基板W而開閉的門11；加熱部20，配備於腔室10的上部而對基板W進行加熱；噴頭30，配備於加熱部20的下側，並形成有複數個噴射孔31，從而使藉由氣體供應部40供應的製程氣體被均勻地噴射到熱處理空間S；冷卻部50，配備於腔室10的下部而冷卻被加熱部20熱處理的基板W；升降驅動部60，在靠近加熱部20的加熱位置與接觸於冷卻部50的冷卻位置之間，使基板W和放置固定基板W的支撐板110升降；排氣部70，配備於腔室10的下部而排出被噴射到熱處理空間S的製程氣體。並且，在腔室10的內部配備有用於固定支撐基板W的基板支撐裝置100。 Referring to FIG. 1, a substrate processing apparatus 1 to which the present invention is applied is a process of performing a reflow process for heat-treating a substrate W made of epoxy molding compound (EMC) in order to manufacture a single-chip system (SoC). The device includes a chamber 10 equipped with a heat treatment space S for heat-treating the substrate W inside, a door 11 opened and closed for carrying in and out of the substrate W on one side, and a heating part 20 provided in the chamber. The substrate W is heated at the upper part 10; the shower head 30 is provided on the lower side of the heating part 20, and a plurality of spray holes 31 are formed, so that the process gas supplied by the gas supply part 40 is uniformly sprayed into the heat treatment space. S; the cooling section 50 is provided at the lower part of the chamber 10 to cool the substrate W heat-treated by the heating section 20; the lift driving section 60 is arranged between the heating position close to the heating section 20 and the cooling position contacting the cooling section 50 so that The substrate W and the supporting plate 110 on which the substrate W is fixed are raised and lowered; the exhaust portion 70 is provided at the lower portion of the chamber 10 and exhausts the process gas injected into the heat treatment space S. A substrate supporting device 100 for fixing and supporting the substrate W is provided inside the chamber 10.
加熱部20是配備在向基板W的上側相隔的位置而給基板W的上表面供應熱的構成，其可以形成為照射加熱光的燈形態，或者形成為內置有加熱器而輻射熱的板形態等。加熱部20被配備成靠近氣體供應部40的周圍以及噴頭30的上側，從而使從氣體供應部40供應至噴頭30的製程氣體被加熱部20加熱到適於製程溫度的溫度後，藉由噴射孔31而被噴射到熱處理空間S。 The heating unit 20 is configured to supply heat to the upper surface of the substrate W at a position spaced apart from the upper side of the substrate W. The heating unit 20 may be formed in a lamp form that radiates heating light, or a plate form in which a heater is built in and radiates heat. . The heating section 20 is provided near the periphery of the gas supply section 40 and the upper side of the shower head 30, so that the process gas supplied from the gas supply section 40 to the shower head 30 is heated by the heating section 20 to a temperature suitable for the process temperature, and then sprayed. The holes 31 are sprayed into the heat treatment space S.
冷卻部50是用於將被加熱部20加熱處理的基板W以及支撐板110冷卻至能夠搬出的溫度的構成，在冷卻部50的內部可以配備有使冷卻水流動的冷卻水路(未示出)等去熱單元。 The cooling unit 50 is a structure for cooling the substrate W and the support plate 110 which have been heat-treated by the heating unit 20 to a temperature at which the substrate W can be carried out. The cooling unit 50 may be provided with a cooling water passage (not shown) through which cooling water flows. Wait to go to the heating unit.
升降驅動部60包括借助於伺服電動機或者氣缸等驅動源的驅動而升降的提升銷61、升降支撐部62和升降銷63。在升降驅動部60可以配備有用於分別驅動提升銷61、升降支撐部62和升降銷63的專門的驅動器。 The lift driving unit 60 includes a lift pin 61, a lift support portion 62, and a lift pin 63 that are lifted and lowered by driving of a drive source such as a servo motor or an air cylinder. The lift driving unit 60 may be provided with a dedicated driver for driving the lift pin 61, the lift support portion 62, and the lift pin 63, respectively.
提升銷61以貫通冷卻部50和支撐板110而進行升降的方式配備，其功能為，使從移送機械手等基板移送裝置(未示出)接手的基板W被置於支撐板110上，或者使基板W從支撐板110分離。 The lift pin 61 is provided so as to pass through the cooling section 50 and the support plate 110 for lifting, and has a function of placing the substrate W received from a substrate transfer device (not shown) such as a transfer robot on the support plate 110, or The substrate W is separated from the support plate 110.
升降支撐部62以沿上下方向貫通冷卻部50而支撐支撐板110並進行升降的方式配備，其功能為，使支撐板110和固定於此的基板W在靠近加熱部20的加熱位置與接觸於冷卻部50的冷卻位置之間升降。 The lifting support portion 62 is provided so as to penetrate the cooling portion 50 in the up-down direction to support and lift the support plate 110. Its function is to bring the support plate 110 and the substrate W fixed thereto in contact with the heating position near the heating portion 20. The cooling position of the cooling section 50 is raised and lowered.
升降銷63以貫通支撐板110而進行升降的方式配備，其功能為，使後述的夾持單元150在開放狀態和關閉狀態之間轉換，在下文中對其構成和作用進行說明。 The lifting pin 63 is provided so as to pass through the support plate 110 to perform lifting, and its function is to switch the clamping unit 150 described later between an open state and a closed state, and its structure and function will be described below.
以下，對根據本發明的第一實施例的基板支撐裝置100的構成及作用進行說明。 The structure and function of the substrate support device 100 according to the first embodiment of the present invention will be described below.
參照第1至4圖，本發明的基板支撐裝置100是在進行用於製造單晶片系統(SoC)的回流焊製程時用於固定支撐環氧樹脂模塑膠(EMC)材質的基板的基板支撐裝置，其包括：支撐板110，可升降地配備於對基板進行熱處理的腔室的內部，並用於支撐基板；複數個基板支撐部件120，在支撐板110上相隔預定間距而配備，用於放置並支撐基板，並由隔熱材料形成以阻斷被熱處理的基板和支撐板110之間的熱傳遞。並且，在支撐板110上，由隔熱材料形成的複數個真空杯130以預定的間距相隔而配備，複數個真空杯130用於藉由施加真空而吸附基板。 Referring to FIGS. 1 to 4, the substrate support device 100 of the present invention is a substrate support device for fixing and supporting a substrate made of epoxy resin molding material (EMC) during a reflow process for manufacturing a single-chip system (SoC). It includes: a support plate 110 that is liftably provided inside a chamber that heat-treats the substrate and is used to support the substrate; a plurality of substrate support members 120 that are provided on the support plate 110 at a predetermined interval for placing and The substrate is supported and formed of a heat-insulating material to block heat transfer between the substrate being heat-treated and the support plate 110. In addition, a plurality of vacuum cups 130 formed of a heat-insulating material are provided at a predetermined interval on the support plate 110, and the plurality of vacuum cups 130 are used to adsorb the substrate by applying a vacuum.
因此，基板W的底面接觸到基板支撐部件120和真空杯130的上端，且基板支撐部件120和真空杯130由隔熱材料形成，據此基板W和支撐板110之間的熱傳遞被阻斷，從而可以防止被加熱處理的基板W的熱損失。因此，能夠均勻地維持被加熱處理的基板W的上表面和底面之間的溫度，從而可以防止在產生溫度差的情況下有可能發生的基板的翹曲現象。 Therefore, the bottom surface of the substrate W is in contact with the upper ends of the substrate supporting member 120 and the vacuum cup 130, and the substrate supporting member 120 and the vacuum cup 130 are formed of a heat insulating material, whereby the heat transfer between the substrate W and the supporting plate 110 is blocked Therefore, it is possible to prevent heat loss of the substrate W to be heat-treated. Therefore, it is possible to uniformly maintain the temperature between the upper surface and the bottom surface of the substrate W to be heat-treated, and it is possible to prevent a warping phenomenon of the substrate that may occur when a temperature difference occurs.
一實施例中，構成基板支撐部件120和真空杯130的隔熱材料可以由聚醚醚酮(PEEK；Polyether ether ether ketone)、高強度塑 膠、聚醯亞胺(PLAVIS)、聚四氟乙烯(Teflon)中的其中一種形成。但是，隔熱材料不限於這種實施例，可以用公知的多種隔熱材料代替。 In an embodiment, the heat insulating material constituting the substrate supporting member 120 and the vacuum cup 130 may be made of polyether ether ketone (PEEK), high-strength plastic. One of gum, polyimide (PLAVIS), and polytetrafluoroethylene (Teflon) is formed. However, the heat insulating material is not limited to this embodiment, and various known heat insulating materials may be used instead.
支撐板110包括：中央部111；複數個圓形部112、112a、112b，在中央部111的周圍以同心結構得到配備；複數個連接部113、113a、113b，連接中央部111和複數個圓形部112、112a、112b並配備成輻射狀；複數個延伸部114，位於連接部113、113a之間，從中央部111以輻射狀延伸；以及複數個突出部115，在支撐板110的周圍部沿著圓周方向相隔預定間距而形成。 The support plate 110 includes: a central portion 111; a plurality of circular portions 112, 112a, and 112b, which are provided in a concentric structure around the central portion 111; a plurality of connecting portions 113, 113a, and 113b, which connect the central portion 111 and a plurality of circles The shaped portions 112, 112a, 112b are provided in a radial shape; a plurality of extending portions 114 are located between the connecting portions 113, 113a, and extend radially from the central portion 111; and a plurality of protruding portions 115 are provided around the support plate 110 The portions are formed at predetermined intervals in the circumferential direction.
一實施例中，基板支撐部件120可以配置在圓形部112、112b和連接部113、113b以及延伸部114上。真空杯130可以配置在中央部111和圓形部112、112a以及連接部113、113a上。 In one embodiment, the substrate supporting member 120 may be disposed on the circular portions 112, 112 b and the connecting portions 113, 113 b and the extending portion 114. The vacuum cup 130 may be disposed on the central portion 111, the circular portions 112, 112a, and the connection portions 113, 113a.
在中央部111和圓形部112、112a以及連接部113、113a的內部連接有用於給複數個真空杯130施加真空的真空線(未示出)。 A vacuum line (not shown) for applying a vacuum to the plurality of vacuum cups 130 is connected to the inside of the central portion 111 and the circular portions 112 and 112a and the connecting portions 113 and 113a.
另外，在支撐板110的突出部115上結合有圓形的環板140，在環板140上配備有複數個夾持單元150、150-1和基板引導部160。 In addition, a circular ring plate 140 is coupled to the protruding portion 115 of the support plate 110, and the ring plate 140 is provided with a plurality of clamping units 150 and 150-1 and a substrate guide 160.
夾持單元150、150-1和基板引導部160可以在環板140上沿著圓周方向以相隔預定角度的方式配置，作為一示例，在兩個夾持單元150、150-1之間配置有一個基板引導部160，這種兩個夾持單元150、150-1和一個基板引導部160的組合可以在圓周方向相隔地配置複數個。 The clamping units 150 and 150-1 and the substrate guide 160 may be disposed on the ring plate 140 at a predetermined angle along the circumferential direction. As an example, the clamping units 150 and 150-1 are disposed between the two clamping units 150 and 150-1. One substrate guide portion 160, a combination of the two clamping units 150, 150-1, and one substrate guide portion 160 may be arranged in a circumferential direction at a distance from each other.
夾持單元150向支撐板110側加壓被放置於支撐板110上的基板的邊緣部從而起到固定基板的功能；基板引導部160支撐被放置於支撐板110上的基板的外側端，從而起到防止基板的側向遊動。 The clamping unit 150 presses the edge portion of the substrate placed on the support plate 110 toward the support plate 110 side to perform the function of fixing the substrate; the substrate guide 160 supports the outer end of the substrate placed on the support plate 110, so that This function prevents the substrate from moving sideways.
夾持單元150、150-1包括：按壓板151，鉸鏈結合於支撐板110而可旋轉地配備於支撐板110，並向支撐板110側加壓被放置於支撐板110上的基板W的邊緣部；彈性部件154，向朝支撐板110的方向彈性支撐按壓板151，按壓板151被配備成與以能夠貫通支撐板110而進行升降的方式配備的升降銷63連動，從而能夠以鉸鏈軸152為中心進行上下旋轉。 The clamping units 150 and 150-1 include a pressing plate 151, a hinge coupled to the supporting plate 110 and rotatably provided on the supporting plate 110, and pressing the edges of the substrate W placed on the supporting plate 110 toward the supporting plate 110 side. The elastic member 154 elastically supports the pressing plate 151 in the direction of the supporting plate 110. The pressing plate 151 is provided to interlock with the lifting pin 63 provided so as to be able to penetrate the supporting plate 110 to be raised and lowered. Rotate up and down for the center.
按壓板151的下端部結合於鉸鏈軸152，鉸鏈軸152的兩端結合於被安裝於支撐板110的邊緣部的固定塊153。 A lower end portion of the pressing plate 151 is coupled to a hinge shaft 152, and both ends of the hinge shaft 152 are coupled to a fixing block 153 attached to an edge portion of the support plate 110.
彈性部件154可以由扭矩彈簧構成，該扭矩彈簧結合於鉸鏈軸152的周圍，且兩端支撐於支撐板110的上表面以及按壓板151的一側面。 The elastic member 154 may be composed of a torsion spring, which is coupled to the periphery of the hinge shaft 152 and is supported at both ends on the upper surface of the support plate 110 and one side of the pressing plate 151.
如第2和3圖所示，在基板W被放置於支撐板110上之前的狀態下，隨著升降銷63上升，按壓板151被向上側抬起而成為開放狀態，如第4圖所示，基板W被放置於支撐板110上之後，隨著升降銷63下降，按壓板151借助於彈性部件154的彈性力而向下側旋轉，從而將放置於支撐板110上的基板W的邊緣部向支撐板110側進行加壓而進行固定。 As shown in FIGS. 2 and 3, in a state before the substrate W is placed on the support plate 110, as the lifting pin 63 rises, the pressing plate 151 is lifted upward to become an open state, as shown in FIG. 4 After the substrate W is placed on the support plate 110, as the lifting pin 63 is lowered, the pressing plate 151 is rotated downward by the elastic force of the elastic member 154, so that the edge portion of the substrate W placed on the support plate 110 The support plate 110 is pressurized and fixed.
基板引導部160包括：主體161，結合於環板140上；以及引導突起162，從主體161的一側面向朝支撐板110的中央的方向突出預定長度而支撐基板W的外側端。 The substrate guide 160 includes a main body 161 coupled to the ring plate 140, and a guide protrusion 162 protruding from a side of the main body 161 toward a center of the support plate 110 by a predetermined length to support the outer end of the substrate W.
在熱處理製程後，具有上述構成的基板支撐裝置100在支撐基板W的狀態下下降而被放置於冷卻部50上，然後進行冷卻製程。 After the heat treatment process, the substrate supporting device 100 having the above-mentioned structure is lowered while being supported on the substrate W, is placed on the cooling section 50, and is then subjected to a cooling process.
參照第5和6圖，冷卻部50是使基板W和基板支撐裝置100能夠被放置而進行冷卻處理的構成，其包括：使支撐板110的中央部111、圓形部112、連接部113和延伸部114分別插入而被放置於殼體56的內側的中央槽51、圓形槽52、52a、52b、連接槽53、53a、53b以及延伸槽54；形成有使上述提升銷61貫通的貫通孔55a的冷卻板55。 5 and 6, the cooling unit 50 is a structure that allows the substrate W and the substrate supporting device 100 to be placed for cooling processing, and includes a central portion 111, a circular portion 112, a connection portion 113, and a central portion 111 of the support plate 110. The extension portion 114 is inserted and placed in the central groove 51, the circular grooves 52, 52a, 52b, the connection grooves 53, 53a, 53b, and the extension groove 54 inside the housing 56, respectively. Hole 55a of the cooling plate 55.
中央槽51、圓形槽52、52a、52b、連接槽53、53a、53b以及延伸槽54的深度分別與支撐板110和基板支撐部件120所結合的高度、以及支撐板110與真空杯130所結合的高度相同。 The depth of the central groove 51, the circular grooves 52, 52a, 52b, the connecting grooves 53, 53a, 53b, and the extension groove 54 are respectively the heights at which the support plate 110 and the substrate support member 120 are combined, and the depths of the support plate 110 and the vacuum cup 130 are The combined height is the same.
因此，在基板支撐裝置100被放置於冷卻部50上的情況下，被放置於基板支撐裝置100的基板支撐部件120和真空杯130上的基板W的底面接觸到冷卻板55的上表面，且支撐板110接觸到形成於冷卻板55的中央槽51、圓形槽52、52a、52b、連接槽53、53a、53b以及延伸槽54的底面，因此能夠有效地進行基板W和支撐板110的冷卻處理。 Therefore, in a case where the substrate supporting device 100 is placed on the cooling section 50, the bottom surface of the substrate W placed on the substrate supporting member 120 and the vacuum cup 130 of the substrate supporting device 100 contacts the upper surface of the cooling plate 55, and The support plate 110 contacts the bottom surface of the central groove 51, the circular grooves 52, 52a, 52b, the connection grooves 53, 53a, 53b, and the extension groove 54 formed in the cooling plate 55, so that the substrate W and the support plate 110 can be efficiently carried out. Cooling treatment.
以下，參照第7至11圖對根據本發明的第二實施例的基板支撐裝置100的構成及作用進行說明，在與第一實施例相同的部件賦予相同的圖式符號，並省略對其的重複說明。 Hereinafter, the structure and function of the substrate supporting device 100 according to the second embodiment of the present invention will be described with reference to FIGS. 7 to 11. The same components as those in the first embodiment are given the same reference numerals, and the descriptions thereof are omitted. Repeat the description.
相比第一實施例，根據本發明的第二實施例的基板支撐裝置100省略了環板140的構成，並在支撐板110的突出部115上以支撐塊155為媒介與夾持單元150、150-2結合，並在突出部115形成有使升降銷63可以沿上下方向貫通而移動的貫通孔115a，除了這些區別點之外，其他構成可以與第一實施例相同。 Compared with the first embodiment, the substrate supporting device 100 according to the second embodiment of the present invention omits the configuration of the ring plate 140, and uses the supporting block 155 as a medium with the clamping unit 150, 150-2 is combined, and a through hole 115a is formed in the protruding portion 115 so that the lift pin 63 can move in the vertical direction. Except for these differences, other structures may be the same as those of the first embodiment.
突出部115上結合有支撐塊155，且在支撐塊155上結合有夾持單元150、150-2的固定塊153。 A support block 155 is coupled to the protruding portion 115, and a fixing block 153 of the clamping units 150 and 150-2 is coupled to the support block 155.
並且，如第11圖所示，在突出部115上可以配備有可以被交替設置的墊片156、156-1、156-2，墊片156、156-1、156-2具有彼此不同的厚度以調節夾持單元150、150-2的高低。 In addition, as shown in FIG. 11, the protrusions 115 may be provided with spacers 156, 156-1, and 156-2 which can be alternately provided. The spacers 156, 156-1, and 156-2 have different thicknesses from each other. To adjust the height of the clamping units 150 and 150-2.
並且，如第11圖的(a)和(b)所示，可以藉由對應於處理物件基板W、W’的厚度而交替設置墊片156、156-1、156-2，據此可以調節夾持單元150、150-2的高低。 In addition, as shown in (a) and (b) of FIG. 11, the spacers 156, 156-1, and 156-2 can be alternately provided in accordance with the thickness of the substrate W, W 'of the processing object, and can be adjusted accordingly. Height of the clamping units 150 and 150-2.
如上所述，根據本發明的基板支撐裝置100的構成，在支撐基板的支撐板110上配備由隔熱材料形成的基板支撐部件120和真空杯130，並在支撐板110的邊緣位置部配備夾持單元150而固定支撐基板的週邊，從而可以有效地防止由環氧樹脂模塑膠材質形成的基板的翹曲現 象，且可以使基板的溫度維持為恒定而增加基板的加熱速度(Ramp up speed)，並縮短基板的加熱時間，因此可以減少用於製造單晶片系統(SoC)的回流焊製程的不良率。 As described above, according to the configuration of the substrate support device 100 of the present invention, the substrate support member 120 and the vacuum cup 130 formed of a heat insulating material are provided on the support plate 110 that supports the substrate, and the edge portion of the support plate 110 is provided with a clip. Hold the unit 150 to fix the periphery of the support substrate, which can effectively prevent warping of the substrate formed of epoxy molding material In addition, the temperature of the substrate can be maintained constant, the heating speed of the substrate can be increased, and the heating time of the substrate can be shortened. Therefore, the defect rate of the reflow soldering process for manufacturing a single-chip system (SoC) can be reduced.
如上所述，本發明不限於上述實施例，在不脫離權利要求書中請求的本發明的技術思想的情況下，在本發明的所屬技術領域中具有基本知識的人員可以進行明顯的變形實施，這種變形實施應屬於本發明的範圍內。 As described above, the present invention is not limited to the above embodiments, and without departing from the technical idea of the present invention as claimed in the claims, persons with basic knowledge in the technical field to which the present invention pertains can implement obvious modifications, Such modification should fall within the scope of the present invention.
110‧‧‧支撐板 110‧‧‧ support plate
111‧‧‧中央部 111‧‧‧ Central
112‧‧‧圓形部 112‧‧‧ round section
112a‧‧‧圓形部 112a‧‧‧round section
112b‧‧‧圓形部 112b‧‧‧ round section
113‧‧‧連接部 113‧‧‧Connection Department
113a‧‧‧連接部 113a‧‧‧connection
113b‧‧‧連接部 113b‧‧‧ Connection
114‧‧‧延伸部 114‧‧‧ extension
115‧‧‧突出部 115‧‧‧ protrusion
120‧‧‧基板支撐部件 120‧‧‧ Substrate support parts
130‧‧‧真空杯 130‧‧‧vacuum cup
140‧‧‧環板 140‧‧‧ ring plate
150‧‧‧夾持單元 150‧‧‧ clamping unit
151‧‧‧按壓板 151‧‧‧Pressing plate
152‧‧‧鉸鏈軸 152‧‧‧ hinge shaft
153‧‧‧固定塊 153‧‧‧Fixed block
154‧‧‧彈性部件 154‧‧‧Elastic parts
160‧‧‧基板引導部 160‧‧‧ substrate guide
161‧‧‧主體 161‧‧‧Subject
162‧‧‧引導突起 162‧‧‧Guide protrusion
63‧‧‧升降銷 63‧‧‧lift pin
Claims (13)
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| KR1020160054517A KR101770221B1 (en) | 2016-05-03 | 2016-05-03 | Substrate holding apparatus |
| ??10-2016-0054517 | 2016-05-03 |
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| TW201740498A TW201740498A (en) | 2017-11-16 |
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| KR (1) | KR101770221B1 (en) |
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| KR102041044B1 (en) | 2018-04-30 | 2019-11-05 | 피에스케이홀딩스 주식회사 | Unit for Supporting Substrate |
| JP7172163B2 (en) * | 2018-06-20 | 2022-11-16 | 日新電機株式会社 | Substrate holder |
| KR102288733B1 (en) * | 2019-09-25 | 2021-08-11 | (주)에스티아이 | Substrate processing apparatus |
| TWI754287B (en) * | 2020-05-25 | 2022-02-01 | 億力鑫系統科技股份有限公司 | carrier device |
| CN112234020B (en) * | 2020-09-02 | 2024-01-30 | 江苏盐芯微电子有限公司 | Integrated circuit packaging equipment |
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| US20090295053A1 (en) * | 2008-05-30 | 2009-12-03 | Production Solutions, Inc. | Adjustable support tooling apparatus |
| TW201332084A (en) * | 2011-09-29 | 2013-08-01 | Tokyo Electron Ltd | Three-dimensional mounting device |
| TW201428867A (en) * | 2013-01-08 | 2014-07-16 | Sti Co Ltd | Continuous treatment method of semiconductor wafer |
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| JP4397742B2 (en) * | 2004-06-17 | 2010-01-13 | シャープ株式会社 | Semiconductor manufacturing equipment |
| KR100645647B1 (en) * | 2005-01-11 | 2006-11-14 | 삼성전기주식회사 | Jig for flexible PCB |
| JP4679172B2 (en) * | 2005-02-23 | 2011-04-27 | 株式会社日立ハイテクノロジーズ | Display panel substrate exposure apparatus, display panel substrate exposure method, and display panel substrate manufacturing method |
| JP5542743B2 (en) * | 2010-10-07 | 2014-07-09 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method |
| JP5466670B2 (en) * | 2010-10-28 | 2014-04-09 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| JP5810517B2 (en) * | 2010-12-02 | 2015-11-11 | 富士電機株式会社 | Adsorption device and adsorption method |
| JP6068975B2 (en) * | 2012-12-27 | 2017-01-25 | 株式会社ディスコ | Cleaning device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090295053A1 (en) * | 2008-05-30 | 2009-12-03 | Production Solutions, Inc. | Adjustable support tooling apparatus |
| TW201332084A (en) * | 2011-09-29 | 2013-08-01 | Tokyo Electron Ltd | Three-dimensional mounting device |
| TW201428867A (en) * | 2013-01-08 | 2014-07-16 | Sti Co Ltd | Continuous treatment method of semiconductor wafer |
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| KR101770221B1 (en) | 2017-08-22 |
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