TWI758875B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- TWI758875B TWI758875B TW109133019A TW109133019A TWI758875B TW I758875 B TWI758875 B TW I758875B TW 109133019 A TW109133019 A TW 109133019A TW 109133019 A TW109133019 A TW 109133019A TW I758875 B TWI758875 B TW I758875B
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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Abstract
本發明的目的在於提供能夠防止因進行基板處理的平台上的基板的翹曲現象而引起的工序不良的基板處理裝置。用於實現此目的的本發明的基板處理裝置包括:多個腔室,為了處理基板而沿圓周方向以預定間隔佈置;轉盤,配備為為了在多個腔室之間移送基板而能夠旋轉,其中,多個腔室中的至少一個腔室配備有:平台,安置基板;夾持環,以與基板的邊緣位置部以預定寬度重疊的方式位於基板的上部並配備為可進行升降,以防止裝載於平台上的基板的變形;彈性部件,配備為對夾持環作用有朝向平台的方向的彈性力;夾持銷,配備為以與作用於所述夾持環的所述彈性力對向的方式使力作用於所述夾持環。An object of the present invention is to provide a substrate processing apparatus capable of preventing process failures due to a warpage phenomenon of a substrate on a stage where substrate processing is performed. A substrate processing apparatus of the present invention for achieving this object includes: a plurality of chambers arranged at predetermined intervals in the circumferential direction for processing the substrate; and a turntable equipped to be rotatable for transferring the substrate among the plurality of chambers, wherein , at least one of the plurality of chambers is equipped with: a platform on which the substrate is placed; a clamping ring on the upper portion of the substrate in a manner of overlapping with an edge position portion of the substrate by a predetermined width and equipped to be raised and lowered to prevent loading The deformation of the base plate on the platform; the elastic member is equipped to act on the clamping ring with an elastic force in the direction of the platform; the clamping pin is equipped to oppose the elastic force acting on the clamping ring in such a way that a force acts on the clamping ring.
Description
本發明涉及一種基板處理裝置,尤其涉及一種能夠防止在基板的處理過程中因熱引起的基板的翹曲現象的基板處理裝置。The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of preventing the warpage of the substrate caused by heat during the processing of the substrate.
近來,為了克服二維集成度增加的侷限性並且增加元件的功能密度(functional density),基於矽的半導體集成技術發展為將兩個以上的晶圓堆疊成三維的三維堆疊集成電路(3D-stacked IC)技術。矽具有優異的機械性質和高導熱性以及最重要的是積累有高度發達的加工技術的優點,但是具有無法實現諸如雷射及LED之類的光學元件、諸如HEMT之類的超高速元件及壓電元件等的缺點。因此正在進行關於通過基於矽的電子元件和InGaAs及GaN等的發光元件的結合的光電複合元件的實現和通過矽元件和GaAs及InP等的化合物半導體元件的結合的超高速高集成元件的實現的研究及開發。Recently, in order to overcome the limitation of increased two-dimensional integration and increase the functional density of components, silicon-based semiconductor integration technology has been developed to stack more than two wafers into three-dimensional three-dimensional stacked integrated circuits (3D-stacked integrated circuits). IC) technology. Silicon has the advantages of excellent mechanical properties and high thermal conductivity and, most importantly, the accumulation of highly developed processing technology, but has the disadvantage of not being able to realize optical components such as lasers and LEDs, ultra-high-speed components such as HEMTs, and pressure. Disadvantages of electrical components, etc. Therefore, implementation of photoelectric composite elements by combining silicon-based electronic elements and light-emitting elements such as InGaAs and GaN, and realization of ultra-high-speed high-integration elements by combining silicon elements and compound semiconductor elements such as GaAs, InP, etc. Research and Development.
如此,正在開發可以通過異種元件的結合來實現複合元件(heterogeneous device)的技術,晶圓接合技術根據接合溫度而可以區分為常溫接合或低溫(<150℃)接合及高溫(>150℃)接合技術。In this way, technologies are being developed that can realize a composite device (heterogeneous device) by bonding dissimilar components. Wafer bonding technology can be classified into room temperature bonding, low temperature (<150°C) bonding, and high temperature (>150°C) bonding depending on the bonding temperature. technology.
高溫接合技術包括陽極接合(anodic bonding)、熱-壓接合(thermo-compression bonding)、共晶接合(Eutectic bonding)及焊料接合(solder bonding)等,這些都作為成熟的技術而廣泛應用於商用產品。但是熱膨脹系數不同的異種元件的高溫晶圓接合會因熱應力而發生翹曲、剝離(debonding)、龜裂(cracking)等的副作用。High temperature bonding techniques include anodic bonding, thermo-compression bonding, eutectic bonding and solder bonding, which are widely used in commercial products as mature technologies . However, high-temperature wafer bonding of dissimilar components with different thermal expansion coefficients may cause side effects such as warpage, debonding, and cracking due to thermal stress.
特別是在異種接合晶圓的熱處理過程中會發生因熱而導致的晶圓的翹曲現象。In particular, warpage of the wafers due to heat occurs during the heat treatment of the dissimilarly bonded wafers.
作為一例,作為用於半導體產品的大容量化及高性能化的手段而正在應用半導體封裝技術,在這樣的半導體封裝工序中將形成用於將貼裝半導體的基板或互不相同的半導體之間電連接的凸塊球(bumping ball)的工序稱為回焊(Reflow)工序。As an example, semiconductor packaging technology is being applied as a means for increasing the capacity and performance of semiconductor products. In such a semiconductor packaging process, a substrate for mounting semiconductors or a space between different semiconductors is formed. The process of electrically connecting bumping balls is called a reflow process.
如上所述的回焊工序通過對安置於平台上的基板施加高溫熱而執行工序,當進行回焊工序時,由於高溫熱傳遞到基板使基板熱膨脹而基板發生翹曲(Warpage)現象,因此如果由於基板的翹曲現象而不能穩定地固定並支撐基板時,則基板表面的熱傳遞變得不均勻,從而導致嚴重的工序不良。The reflow process as described above is performed by applying high-temperature heat to the substrate placed on the stage. When the reflow process is performed, a warpage phenomenon occurs in the substrate due to the thermal expansion of the substrate due to the transfer of the high-temperature heat to the substrate. Therefore, if the substrate cannot be stably fixed and supported due to the warpage phenomenon of the substrate, the heat transfer on the surface of the substrate becomes uneven, resulting in serious process failure.
圖1的(a)表示基板W的中心部C和其外側部與水平面H平行的正常狀態,圖1的(b)表示基板W’的外側部與中心部C相比向上側翹曲的狀態。FIG. 1( a ) shows a normal state in which the central portion C and the outer portion of the substrate W are parallel to the horizontal plane H, and FIG. 1( b ) shows a state in which the outer portion of the substrate W′ is warped upward from the central portion C .
在現有的基板處理工序中作為與用於固定並支撐基板的裝置相關的現有技術的韓國授權專利第10-1501171號(回焊處理單元)中介紹了可以使用藉由真空壓力吸附基板的真空吸盤、機械夾持或者靜電吸盤的一般的技術內容。Korean Granted Patent No. 10-1501171 (reflow processing unit), which is a prior art related to a device for fixing and supporting a substrate in an existing substrate processing process, describes the use of a vacuum chuck capable of sucking a substrate by vacuum pressure , general technical content of mechanical clamping or electrostatic chuck.
作為另一現有技術,在授權專利第10-0645647號(柔性基板用夾具)中公開了用在搬運夾具的上表面中藉由鉸鏈而被驅動的按壓板來固定柔性基板使其處於不下垂的狀態的結構。As another prior art, it is disclosed in Granted Patent No. 10-0645647 (jig for flexible substrate) that a flexible substrate is fixed in a position not to sag using a pressing plate driven by a hinge in the upper surface of the conveying jig The structure of the state.
但是,如上述的回焊工序,當因熱膨脹而發生基板的翹曲現象時,要求開發能夠防止因基板的翹曲現象而導致的工序不良的改善結構的基板處理裝置。However, in the reflow process described above, when warpage of the substrate occurs due to thermal expansion, it is required to develop a substrate processing apparatus with an improved structure that can prevent process defects caused by the warpage of the substrate.
本發明為瞭解決上述的諸多而提出,其目的在於提供一種能夠防止因在進行基板處理的平台上的基板的翹曲現象而導致的工序不良的基板處理裝置。The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus which can prevent a process failure caused by a warpage phenomenon of a substrate on a stage where substrate processing is performed.
用於達成上述的目的的本發明的基板處理裝置包括:多個腔室,為了處理基板而沿圓周方向以預定間隔佈置;轉盤600,配備為為了在所述多個腔室之間移送所述基板而能夠旋轉,其中,所述多個腔室中的至少一個腔室配備有:平台110,安置所述基板;夾持環120,以與所述基板的邊緣位置部以預定寬度重疊的方式位於所述基板的上部並配備為可進行升降,以防止裝載於所述平台110上的基板的變形;彈性部件150,配備為對所述夾持環120作用有朝向所述平台110的方向的彈性力;夾持銷160,配備為以與作用於所述夾持環120的所述彈性力對向的方式使力作用於所述夾持環120。The substrate processing apparatus of the present invention for achieving the above-mentioned object includes: a plurality of chambers arranged at predetermined intervals in the circumferential direction for processing a substrate; and a
所述轉盤600包括:轉盤主體610,藉由轉盤驅動部而旋轉;環形的轉盤環630,配備為在支撐並安置於多個開口部620中的每一個的邊緣位置的狀態下能夠從所述轉盤主體610分離,所述多個開口部620貫通所述轉盤主體610並以對應於所述多個腔室的數量形成,所述基板處理裝置配備有:平台驅動部,提供用於沿上下方向升降所述平台110的驅動力, 在具有所述平台110的第一腔室100的第一空間S1與設置於所述第一空間S1的下側而與所述多個腔室連通的第一腔室100的第二空間S2在空間上相互隔離的狀態下可以執行所述基板的裝載及卸載,而且如果所述平台110和轉盤環630藉由所述平台驅動部的驅動而一起向上方向移動,則在所述轉盤環630緊貼於配備在所述第一空間S1與第二空間S2的邊界的薄片部100c的狀態下可以執行所述基板的裝載及卸載。The
配備有提供用於使所述夾持銷160上下升降的驅動力的夾持銷驅動部,其中,所述平台驅動部與所述夾持銷驅動部可以在沿上下方向升降時以相同的高度升降。Equipped with a clamping pin driving part that provides a driving force for moving the
所述夾持環120與所述彈性部件150配備於所述轉盤600上,從而可以在所述轉盤600旋轉時一起旋轉。The
所述轉盤600包括:轉盤主體610,藉由轉盤驅動部而旋轉;環形的轉盤環630,配備為在支撐並安置於多個開口部620中的每一個的邊緣位置的狀態下能夠從所述轉盤主體610分離,所述多個開口部620貫通所述轉盤主體610並以對應於所述多個腔室的數量形成;基板支撐部件640,結合於所述轉盤環630的內側,並且在上部安置所述基板。The
所述夾持銷160可以配備為沿上下方向貫通所述轉盤環630。The
所述夾持銷160可以配備為沿上下方向貫通所述平台110的邊緣位置部。The
基板處理裝置配備有:夾持引導件130,配備為結合於所述夾持環120的邊緣位置部並使所述夾持銷160的上端接觸於底面;彈性部件支撐架140,配備為在所述轉盤環630上向上側延伸,其中,所述彈性部件150的一側端可以被所述夾持引導件130支撐,所述彈性部件150的另一側端可以被所述彈性部件支撐架140支撐。The substrate processing apparatus is equipped with: a
所述平台110藉由平台驅動部的驅動而上升時,所述轉盤環630、所述夾持環120以及所述夾持銷160可以一起上升。When the
所述轉盤環630的上表面與所述薄片部之間可以配備有用於維持氣密的第一密封部件170,所述轉盤環630的底面與所述平台110的邊緣位置部上表面之間可以配備有用於保持氣密的第二密封部件180。A
所述夾持環120可以配備為能夠升降,以使所述夾持環120的底面接觸於所述基板的邊緣位置部的上表面,或者使所述夾持環120的底面與所述基板的邊緣位置部的上表面在上下方向上接近而形成預定間隙。The
所述多個腔室包括:第一腔室100,進行所述基板的裝載和卸載;第二腔室200、第三腔室300、第四腔室400,用於對裝載在所述第一腔室100的基板加熱而進行熱處理;第五腔室500,冷卻在所述第四腔室400中經過熱處理的基板,其中,所述第五腔室500的基板可以移送到所述第一腔室100而被冷卻後卸載。The plurality of chambers include: a
所述第二腔室200、第三腔室300及第四腔室400配備有分別配備於所述基板的上部和下部而用於加熱所述基板的上部加熱器和下部加熱器,所述轉盤600可以配備為旋轉時通過所述上部加熱器與下部加熱器之間。The
所述第五腔室500配備有用於對所述基板加熱的加熱器,所述第五腔室500的加熱器的加熱溫度可以設定為低於在所述第四腔室400中加熱所述基板的溫度,從而實現所述基板的冷卻。The
根據本發明的基板處理裝置,配備有位於裝載在平台上的基板的邊緣位置部上部的夾持環,據此可以防止基板的翹曲現象,使基板的整個區域實現均勻的熱傳遞,從而防止基板的工序不良並提高基板處理工序的可靠性。According to the substrate processing apparatus of the present invention, the holding ring is provided at the upper portion of the edge position of the substrate loaded on the stage, whereby the warpage phenomenon of the substrate can be prevented, and the entire area of the substrate can be uniformly transferred, thereby preventing The process of the substrate is defective and the reliability of the substrate processing process is improved.
並且,彈性部件的彈性力作用於夾持環的上部,據此可以防止過大的力作用於基板,從而可以預先防止基板的損傷及破損的同時防止基板的翹曲現象。In addition, the elastic force of the elastic member acts on the upper portion of the clamp ring, thereby preventing excessive force from acting on the substrate, thereby preventing damage and breakage of the substrate and preventing warpage of the substrate.
並且,使對向於彈性部件的彈性力的力作用於夾持環的下部,據此可以使夾持環的底面與基板上表面接觸或者隔開預定距離,從而能夠調節作用於基板的力。Further, by applying a force against the elastic force of the elastic member to the lower portion of the clamp ring, the bottom surface of the clamp ring can be brought into contact with or separated from the upper surface of the substrate by a predetermined distance, and the force acting on the substrate can be adjusted.
以下,參照附圖針對本發明的優選的實施例的構成及作用進行詳細的如下說明。Hereinafter, the configuration and operation of preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
參照圖2與圖3,本發明的基板處理裝置1包括:多個腔室100、200、300、400、500,為了處理基板而沿圓周方向以預定間隔佈置;轉盤600,配備為為了在所述多個腔室100、200、300、400、500之間移送基板而能夠旋轉。2 and 3, the
在本發明的基板處理裝置1中作為一例,可以執行回焊工序。並且,在本發明的基板處理裝置1中,在不是執行回焊工序的情況下也可以執行使用熱的工序。In the
所述多個腔室100、200、300、400、500可以包括:第一腔室100,進行所述基板的裝載和卸載;第二腔室200、第三腔室300、第四腔室400,用於對裝載在所述第一腔室100的基板加熱而進行熱處理;第五腔室500,冷卻在所述第四腔室400中經過熱處理的基板。The plurality of
在所述第一腔室100中不僅進行基板的裝載及卸載,還執行依次經過所述第二腔室200、第三腔室300、第四腔室400、第五腔室500而被加熱處理的基板的冷卻,並且在第二腔室200、第三腔室300、第四腔室400、第五腔室500中可以執行伴隨基板的加熱處理的工序。In the
所述第五腔室500可以構成為在第一腔室100的冷卻之前執行冷卻工序。此時,所述第五腔室500也可以構成為具備加熱器以加熱基板,但是將基板的加熱溫度設定為低於在第四腔室400中加熱基板的溫度,從而實現基板的冷卻。The
在所述第一腔室100的一側連接設置有設備前端模塊2(EFFM:Equipment Front End Module)。An equipment front end module 2 (EFFM: Equipment Front End Module) is connected to one side of the
所述設備前端模塊2具有如下功能:將裝載於基板裝載部2a的未處理的基板利用配備於基板移送部2b的移送機器人(未示出)裝載到基板處理裝置1的第一腔室100,或者將基板處理裝置1中已完成處理的基板從第一腔室100卸載而裝載到基板裝載部2a。The equipment front-
所述第二腔室200、第三腔室300、第四腔室400、第五腔室500中加熱基板的溫度可以設定為100℃至450C。並且,所述第二腔室200、第三腔室300、第四腔室400、第五腔室500分別可以配備有為了加熱基板而產生熱的加熱器。所述加熱器的形狀和大小可以變更為多種多樣,所述加熱器可以分別配備於基板的上部和下部。The temperature of the heating substrate in the
所述轉盤600包括:轉盤主體610,藉由轉盤驅動部(未示出)而旋轉;多個開口部620,貫通所述轉盤主體610,並以對應於所述多個腔室100、200、300、400、500的數量沿圓周外圍而形成;環形的轉盤環630,配備為在支撐並安置於各個所述開口部620的邊緣位置的狀態下能夠從轉盤主體610分離。The
圖3的(a)表示轉盤環630安置於轉盤主體610的狀態,圖3的(b)表示轉盤環630從轉盤主體610分離的狀態。FIG. 3( a ) shows a state in which the
如果驅動所述轉盤驅動部,則轉盤600將在上下高度固定的狀態下旋轉。所述轉盤環630隨著後述的平台110升降而一起升降,所述轉盤環630會以從所述轉盤主體610分離的狀態進行升降。When the turntable driving part is driven, the
參照圖4與圖5針對所述多個腔室100、200、300、400、500中的一個,即第一腔室100的結構及內部構成進行說明。Referring to FIG. 4 and FIG. 5 , the structure and internal structure of one of the plurality of
所述第一腔室100由上部腔室100a和配備於所述上部腔室100a的下側的下部腔室100b構成。The
所述上部腔室100a的內部形成有第一空間S1,所述下部腔室100b的內部形成有第二空間S2。A first space S1 is formed in the
所述第一腔室100中,基板W的裝載及卸載是在所述第一空間S1與第二空間S2在空間上彼此不連通而隔離的狀態下執行。In the
所述第一空間S1具有藉由移送機器人而裝載基板裝載部2a的基板W或藉由移送機器人將已完成基板處理的基板W卸載到基板裝載部2a的作為裝載鎖定部的功能。The first space S1 functions as a load lock portion for loading the substrates W of the
所述第二空間S2中佈置有轉盤600,並且與相鄰的另外腔室200、300、400、500連通而提供在各個腔室100、200、300、400、500之間移送基板W的通路。即,所述第二空間S2具有將裝載的基板從第一腔室100移送到第二腔室200的通路的功能、將所述第五腔室500中已完成處理的基板移送到裝載鎖定部的通路的功能以及卸載之前執行基板的冷卻的作為工序腔室的功能。The
所述上部腔室100a的一側面形成用於使裝載及卸載的基板出入的開口部(未示出),所述開口部通過閘閥(未示出)進行開閉。One side surface of the
在所述第一腔室100具備如下部件:平台110,安置基板W;夾持環120,以與所述基板W的邊緣位置部以預定寬度重疊的方式位於所述基板W的上部並配備為可進行升降,以防止安置於平台110上的基板W變形;彈性部件150,配備為對所述夾持環120作用有作為朝向所述平台110的方向推動的力的彈性力;夾持銷160,配備為以與作用於所述夾持環120的所述彈性力對向的方式使推動的力作用於所述夾持環120。The
所述平台110可以配備有用於對裝載在平台110的上部的基板進行冷卻的冷卻單元(未示出)。並且,可以具有提供驅動力以使所述平台110能夠沿上下方向進行升降的平台驅動部(未示出)。所述平台110的上表面可以形成有對應於後述的基板支撐部件640的形狀的基板支撐部件插入槽(未示出)。The
所述夾持環120位於基板W的上部,如圖5所示,形成為環(ring)形。如圖5所示,在平面圖上觀察時,如果形成為圓盤形狀的基板W的邊緣位置部與夾持環120的半徑方向的寬度的構成為預定部分重疊,則當基板W的邊緣位置部發生變形時夾持環120的重疊部分會按壓基板W的變形部分,從而可以藉由物理接觸而防止基板W變形。The holding
此時,所述夾持環120可以構成為底面接觸於所述基板W的邊緣位置部的上表面,也可以構成為不接觸到基板W的上表面,而是在上下方向上接近而形成預定間隙。At this time, the
所述夾持環120的外周表面周圍的邊緣位置端部結合有多個夾持引導件130。所述夾持引導件130的內側部與夾持環120結合成一體,外側部配備為從夾持環120的外周表面向外側突出。A plurality of clamping guides 130 are combined with edge position ends around the outer peripheral surface of the
所述夾持環120可以由金屬、合成樹脂、高分子等的多樣的材質構成。The holding
所述彈性部件150作為一例,可以由卷簧構成。所述彈性部件150的上端支撐於彈性部件支撐架140的上端部,所述彈性部件150的下端支撐於所述夾持引導件130的上表面。The
如果所述夾持銷160向上移動,則所述夾持環120與夾持引導件130將向上移動而使所述彈性部件150被壓縮。所述夾持銷160向下移動時,所述夾持環120與夾持引導件130會被彈性部件150的彈性恢復力推動而向下移動。If the
所述彈性部件支撐架140可以配備在轉盤600所具有的轉盤環630的上部。藉由這種構成,在轉盤600旋轉時彈性部件支撐架140及彈性部件150也一起旋轉。並且,當平台110升降時,轉盤環630也會一起升降。The elastic
所述夾持銷160包括:多個第一銷部161,用於支撐基板W;多個第二銷部162,配備於第一銷部161的外側,並且配備為能夠作用有用於使所述夾持環120上升的力。The
所述第一銷部161具有上下方向的長度,其上端接觸於基板W的底面而支撐基板W。所述第二銷部162具有上下方向的長度,其上端接觸於後述的夾持引導件130的底面而支撐夾持引導件130和夾持環120。The
所述第二銷部162的上端位置處於相比於所述第一銷部161的上端位置更高的位置,且相比於裝載到第一銷部161的上端的基板W,裝載到第二銷部162的上端的夾持環120的位置處於更高的位置。如果在這樣的狀態下沿上下方向移動所述夾持銷160,則夾持環120與基板W會一起進行上下移動。The upper end position of the
配備有提供用於沿上下方向升降所述夾持銷160的驅動力的夾持銷驅動部(未示出)。所述夾持銷驅動部可以與所述平台驅動部單獨地配備。A clamp pin driving portion (not shown) that provides a driving force for raising and lowering the
由所述夾持銷驅動部的驅動引起的夾持銷160的上下移動量與由所述平台驅動部的驅動引起的平台110的上下移動量可以被設定為相同。即,所述夾持銷160與平台110可以以相同的移動量沿上方向向上方移動,或者以相同的移動量沿下方向向下移動。The up-and-down movement amount of the
所述轉盤環630的內側結合有基板支撐部件640。在所述基板支撐部件640插入於形成在平台110的上表面的基板支撐部件插入槽的狀態下,基板W的底面接觸於平台110的上表面,從而實現基板W的冷卻。如果所述平台110下降,從而基板支撐部件640從基板支撐部件插入槽脫離,則基板W變成被基板支撐部件640支撐的狀態,且變成藉由轉盤600的旋轉而能夠一起旋轉的狀態。A
所述基板支撐部件640可以由金屬、合成樹脂、高分子等多樣的材質構成。The
所述夾持銷160的第一銷部161形成為沿上下方向貫通所述平台110與基板支撐部件640,所述夾持銷160的第二銷部162形成為沿上下方向貫通所述平台110的邊緣位置部與轉盤環630。The
所述上部腔室100a與下部腔室100b的邊界部分形成有向內側突出的薄片部100c。所述平台110與轉盤環630上升,從而所述轉盤環630的上表面緊貼於所述薄片部100c。所述轉盤環630的上表面與所述薄片部100c之間夾設有第一密封部件170,從而保持氣密。並且,所述轉盤環630的底面與平台110的上表面之間夾設有第二密封部件180,從而保持氣密。The boundary portion between the
如果變成這種狀態,第一腔室100的內部空間以平台110為基準其上側的第一空間S1與下側的第二空間S2相互隔離。In this state, the first space S1 on the upper side and the second space S2 on the lower side of the inner space of the
圖4是示出為第一空間S1與第二空間S2相互隔離的狀態,處於藉由平台驅動部和夾持銷驅動部的驅動而平台110和夾持銷160上升的狀態。在此狀態下,通過移送機器人將基板W從基板裝載部2a裝載到上部腔室100a的內部,或者將上部腔室100a的內部的基板W卸載到基板裝載部2a。FIG. 4 shows a state in which the first space S1 and the second space S2 are isolated from each other, and the
此時由於轉盤600的轉盤主體610的上下位置不可變,因而轉盤環630與基板支撐部件640從轉盤主體610分離而成為向上移動的狀態。At this time, since the vertical position of the turntable
圖6是平台110與夾持銷160藉由平台驅動部與夾持銷驅動部的驅動而下降的狀態。FIG. 6 is a state in which the
如果所述平台驅動部與夾持銷驅動部執行下降驅動,則平台110與夾持銷160將會下降。If the platform driving part and the clamping pin driving part perform descending driving, the
所述轉盤環630、基板支撐部件640、彈性部件支撐架140、彈性部件150、夾持環120以及夾持引導件130將一體地下降。此時,夾持環120和夾持引導件130可以構成為以相同的移動量下降。The
如果所述轉盤環630與基板支撐部件640隨著下降而下降到轉盤主體610的開口部620的位置,則轉盤環630將安置於開口部620的邊緣位置。If the
並且,平台110下降為從基板支撐部件640隔開,夾持銷160下降到第一銷部161和第二銷部162的上端從基板W和夾持引導件130的底面隔開的位置。Then, the
此時,即使平台驅動部的驅動被停止,也驅動夾持銷驅動,以使夾持銷160的第二銷部162的上端從夾持引導件130的底面隔開。At this time, even if the driving of the stage driving portion is stopped, the clamping pin is driven so that the upper end of the
如果成為這種狀態,則夾持環120和夾持引導件130藉由所述彈性部件150的彈性恢復力而向下移動,夾持引導件130的上表面成為被彈性部件150推開的狀態,夾持引導件130的底面將接觸到轉盤環630的上表面。In this state, the
在這樣的狀態下,如果轉盤600藉由轉盤驅動部的驅動而旋轉,則如圖7所示,基板W在被基板支撐部件640支撐的狀態下移送到第二腔室200。In such a state, when the
圖7表示如下的狀態:在第二腔室200的內部配備有配備了上部加熱器的上部平台210和配備了下部加熱器的下部平台220,並且基板W藉由裝載有基板W的轉盤600的旋轉而從第一腔室100移送到第二腔室200。7 shows a state in which an
夾持環120可以位於基板W的上部而防止基板W發生變形。如果夾持引導件130藉由所述彈性部件150的彈性力而被向下推動,從而夾持引導件130的底面緊貼於轉盤環630的上表面,則所述夾持環120接觸於基板W的上表面或者夾持環120的底面與基板W的上表面之間形成預定間隙。The
在如此的狀態下,如果對基板W進行熱處理,則即使在基板W的邊緣位置部發生變形,也可以借助夾持環120而防止基板W變形。並且,由於夾持環120與夾持引導件130被彈性部件150支撐,因此能夠防止過大的力作用於基板W,從而預先防止基板的損傷及破損。In such a state, when the substrate W is heat-treated, even if the edge portion of the substrate W is deformed, the substrate W can be prevented from being deformed by the
並且,彈性部件150的彈性力作用於夾持環120與夾持引導件130的上部,並且在下部由夾持銷160以對向於所述彈性力的方式支撐,而且可以藉由夾持銷驅動部調節為夾持環120的底面與基板W的上表面接觸或者從基板W隔開預定距離,從而可以調節作用於基板W的力。In addition, the elastic force of the
基板藉由所述上部平台210與下部平台220而被加熱,據此實現基板處理。此時,上部平台210與夾持環120之間被隔開,下部平台220與基板支撐部件640之間也被隔開。The substrate is heated by the
雖然圖7針對第二腔室200進行了說明,但是在第三腔室300、第四腔室400及第五腔室500也配備有配備了上部加熱器的上部平台與配備了下部加熱器的下部平台。此時,在第五腔室500中以相比於第四腔室400中的基板的加熱溫度更低的溫度進行加熱,據此可以構成為能夠實現在第四腔室400中經過熱處理的基板的冷卻作用。Although FIG. 7 illustrates the
圖8是表示在第五腔室500中經過處理的基板W被移送到第一腔室100之後夾持銷160與平台110上升的狀態的圖。FIG. 8 is a diagram showing a state in which the clamping pins 160 and the
如果位於第五腔室500的基板W藉由轉盤600的旋轉而被移送到第一腔室100,則平台驅動部與夾持銷驅動部被驅動,從而平台110和夾持銷160會上升。When the substrate W in the
平台110的上表面藉由所述平台110的上升而接觸於基板W的底面,夾持銷160的第二銷部162依次貫通平台110的邊緣位置部與轉盤環630,從而上端接觸於夾持引導件130的底面。此時,可以使第一銷部161成為貫通平台110的狀態,而其上端未接觸基板W的底面的狀態。The upper surface of the
如果在如上所述的狀態下繼續驅動平台驅動部與夾持銷驅動部,則轉盤環630的上表面接觸於薄片部100c的底面。此時,轉盤環630與薄片部100c之間藉由第一密封部件170而保持氣密。在所述轉盤環630接觸到薄片部100c的底面的位置,平台驅動部的驅動被停止。If the stage driving unit and the clamping pin driving unit are continuously driven in the above state, the upper surface of the
此時,在進行基板W的上升的期間,冷卻單元被驅動,從而可以進行安置於平台110的基板W的冷卻,在完成基板W的上升之後的預定時間期間,可以附加地進行基板W的冷卻。At this time, the cooling unit is driven during the ascending of the substrate W, so that the cooling of the substrate W placed on the
在所述轉盤環630的上表面接觸於薄片部100c的底面的狀態下,如果基板W冷卻完畢,則進一步驅動夾持銷驅動部時夾持銷160會進一步上升而成為如圖4所示的狀態。此時,基板W藉由第一銷部161而上升,從而從平台110的上表面隔開,夾持引導件130藉由第二銷部162克服彈性部件150的彈性力而向上移動,從而彈性部件150成為壓縮的狀態。In a state in which the upper surface of the
在此狀態下閘閥被驅動,從而形成於上部腔室100a的一側的開口部被開放,藉由移送機器人而實現基板W的卸載。In this state, the gate valve is driven, the opening formed on one side of the
如上所述,本發明並不侷限於上述實施例,在不脫離權利要求書中請求的本發明的技術思想的情況下,本發明所屬的技術領域中具備基本知識的人員可實現顯而易見的變形實施,這些變形實施屬於本發明的範圍內。As described above, the present invention is not limited to the above-mentioned embodiments, and those with basic knowledge in the technical field to which the present invention pertains can implement obvious modifications without departing from the technical idea of the present invention as claimed in the claims. , these variant implementations fall within the scope of the present invention.
1:基板處理裝置
2:設備前端模塊
2a:基板裝載部
2b:基板移送部
100:第一腔室
100a:上部腔室
100b:下部腔室
100c:薄片部
110:平台
120:夾持環
130:夾持引導件
140:彈性部件支撐架
150:彈性部件
160:夾持銷
161:第一銷部
162:第二銷部
170:第一密封部件
180:第二密封部件
200:第二腔室
210:上部平台
220:下部平台
300:第三腔室
400:第四腔室
500:第五腔室
600:轉盤
610:轉盤主體
620:開口部
630:轉盤環
640:基板支撐部件
H:水平面
C:中心部
W、W’:基板
S1:第一空間
S2:第二空間1: Substrate processing device
2: Equipment front-
圖1是用於說明基板的翹曲現象的圖。 圖2是表示本發明的基板處理裝置的平面圖。 圖3是表示本發明的基板處理裝置的轉盤的立體圖。 圖4是表示本發明的基板處理裝置中的第一腔室的內部構成的剖面圖。 圖5是表示本發明的基板處理裝置的轉盤環和夾持環及基板的平面圖。 圖6是表示本發明的基板處理裝置的第一腔室中夾持銷和平台下降的狀態的剖面圖。 圖7是表示本發明的基板處理裝置中旋轉轉盤而晶圓從第一腔室移送到第二腔室的狀態的剖面圖。 圖8是本發明的基板處理裝置的第一腔室中夾持環和平台上升的狀態的剖面圖。FIG. 1 is a diagram for explaining a warpage phenomenon of a substrate. 2 is a plan view showing the substrate processing apparatus of the present invention. 3 is a perspective view showing a turntable of the substrate processing apparatus of the present invention. 4 is a cross-sectional view showing an internal configuration of a first chamber in the substrate processing apparatus of the present invention. 5 is a plan view showing a turntable ring, a clamp ring, and a substrate of the substrate processing apparatus of the present invention. 6 is a cross-sectional view showing a state in which the clamping pins and the stage are lowered in the first chamber of the substrate processing apparatus of the present invention. 7 is a cross-sectional view showing a state in which the turntable is rotated and the wafer is transferred from the first chamber to the second chamber in the substrate processing apparatus of the present invention. 8 is a cross-sectional view of a state in which the clamping ring and the stage are raised in the first chamber of the substrate processing apparatus of the present invention.
1:基板處理裝置1: Substrate processing device
2:設備前端模塊2: Equipment front-end module
2a:基板裝載部2a: Substrate loading section
2b:基板移送部2b: Substrate transfer section
100:第一腔室100: first chamber
200:第二腔室200: Second chamber
300:第三腔室300: Third chamber
400:第四腔室400: Fourth chamber
500:第五腔室500: Fifth chamber
Claims (13)
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US20060032079A1 (en) * | 2004-06-10 | 2006-02-16 | Jian Zhang | Serial thermal processor arrangement |
TW201740498A (en) * | 2016-05-03 | 2017-11-16 | 系統科技公司 | Substrate holding apparatus |
TW201933529A (en) * | 2014-10-17 | 2019-08-16 | 美商應用材料股份有限公司 | Electrostatic chuck assembly for high temperature processes |
TW201933531A (en) * | 2017-11-29 | 2019-08-16 | 南韓商Tes股份有限公司 | Method of moving a lift pin unit and a substrate processing apparatus |
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JP2601179Y2 (en) * | 1993-11-29 | 1999-11-08 | 日新電機株式会社 | Substrate holding device |
KR101160253B1 (en) * | 2009-11-27 | 2012-06-26 | 주식회사 맥시스 | tray for substrate |
KR20120048879A (en) * | 2010-11-08 | 2012-05-16 | 주식회사 케이씨텍 | Semi-batch type atomic layer deposition apparatus having clamp ring |
KR101406172B1 (en) * | 2013-01-08 | 2014-06-12 | (주)에스티아이 | Continuous treatment apparatus and method of semiconductor wafer |
JP6296299B2 (en) * | 2014-09-02 | 2018-03-20 | パナソニックIpマネジメント株式会社 | Plasma processing apparatus and plasma processing method |
KR101910801B1 (en) * | 2016-10-26 | 2019-01-07 | 세메스 주식회사 | Apparatus and method for treating substrate |
KR101921597B1 (en) * | 2016-12-16 | 2018-11-26 | (주)에스티아이 | Continuous treatment apparatus and method of substrate |
US11088011B2 (en) * | 2017-04-12 | 2021-08-10 | Ebara Corporation | Elastic membrane, substrate holding device, and polishing apparatus |
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US20060032079A1 (en) * | 2004-06-10 | 2006-02-16 | Jian Zhang | Serial thermal processor arrangement |
TW201933529A (en) * | 2014-10-17 | 2019-08-16 | 美商應用材料股份有限公司 | Electrostatic chuck assembly for high temperature processes |
TW201740498A (en) * | 2016-05-03 | 2017-11-16 | 系統科技公司 | Substrate holding apparatus |
TW201933531A (en) * | 2017-11-29 | 2019-08-16 | 南韓商Tes股份有限公司 | Method of moving a lift pin unit and a substrate processing apparatus |
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CN112563160B (en) | 2023-09-29 |
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TW202114037A (en) | 2021-04-01 |
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