JP2020129609A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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JP2020129609A
JP2020129609A JP2019021652A JP2019021652A JP2020129609A JP 2020129609 A JP2020129609 A JP 2020129609A JP 2019021652 A JP2019021652 A JP 2019021652A JP 2019021652 A JP2019021652 A JP 2019021652A JP 2020129609 A JP2020129609 A JP 2020129609A
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substrate
processed
processing apparatus
pressing
peripheral portion
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JP6535828B1 (en
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山口 臣治
Shinji Yamaguchi
臣治 山口
圭悟 天本
Keigo Amamoto
圭悟 天本
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Kowa Co Ltd
Kouwa Co Ltd
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Kowa Co Ltd
Kouwa Co Ltd
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Abstract

PURPOSE: To provide a substrate processing apparatus capable of uniformly heating a whole processed substrate by sufficiently suppressing wrapping of the processed substrate at a heating processing of the processed substrate, making an upper face side of the processed substrate drying with effect, and preventing dust or the like in a sealed container from being easily fastened onto an upper face of the processed substrate, and provide a method of them.CONSTITUTION: The present invention provides a substrate processing apparatus that performs a heat processing of a processed substrate in a sealed container, comprises: a pressing force part that presses the peripheral part of the processed substrate arranged on a hot plate from an upper direction with a pressure; and a driving part that closes to and separates from the pressing force part from the peripheral part, and a method. The pressing force part is conductively arranged at the peripheral part of the processed substrate in a whole or a part of a lower surface side of an almost frame-like support part opposite to the peripheral part or neighboring part of the processed substrate.SELECTED DRAWING: Figure 1

Description

本発明は液晶表示装置、有機EL表示装置、又は半導体製造装置などに使用されるガラス製又は樹脂製等の被処理基板を加熱等する場合に使用される基板処理装置及び基板処理方法に関する。 The present invention relates to a substrate processing apparatus and a substrate processing method used when heating a substrate to be processed such as glass or resin used in a liquid crystal display device, an organic EL display device, a semiconductor manufacturing device, or the like.

従来より、レジスト塗布後のガラス基板等の被処理基板に対して加熱処理(ベーク処理)が行われている。このような被処理基板の加熱処理には、例えば図7に示す装置が使われている。図7は、特許文献1から一部修正して引用した図である。 BACKGROUND ART Conventionally, a heat treatment (baking treatment) is performed on a substrate to be processed such as a glass substrate after applying a resist. For such heat treatment of the substrate to be processed, for example, the apparatus shown in FIG. 7 is used. FIG. 7 is a diagram partially modified and cited from Patent Document 1.

図7において、101は底部111と蓋体112とから成る密閉容器、114はヒータ113を内蔵したホットプレート、115は前記蓋体112から前記密閉容器101内に窒素ガス等のパージガスを供給するガス供給管、116は前記密閉容器101からの排気を行う排気管である。 In FIG. 7, 101 is a closed container including a bottom 111 and a lid 112, 114 is a hot plate having a heater 113 built therein, and 115 is a gas for supplying a purge gas such as nitrogen gas from the lid 112 into the closed container 101. A supply pipe 116 is an exhaust pipe for exhausting air from the closed container 101.

前記密閉容器101内では、被処理基板Wが前記ホットプレート114の上に配置された後、前記ガス供給管115から前記密閉容器101内に例えば室温のパージガスが供給されると共に前記排気管116から排気が行われる。そして、この状態で被処理基板Wの加熱処理が行われる。前記密閉容器101内に供給されたパージガスは、図中の矢印で示すように被処理基板Wの表面近傍を外縁から中心へと流れて前記蓋体112の天井部側の排気管116から排出される。 In the closed container 101, the substrate W to be processed is placed on the hot plate 114, and then, for example, a purge gas at room temperature is supplied from the gas supply pipe 115 into the closed container 101 and the exhaust pipe 116 is supplied. Exhaust is performed. Then, in this state, the heat treatment of the target substrate W is performed. The purge gas supplied into the closed container 101 flows from the outer edge to the center in the vicinity of the surface of the substrate to be processed W as shown by the arrow in the figure, and is discharged from the exhaust pipe 116 on the ceiling side of the lid 112. It

ところで、このような被処理基板Wの加熱処理時においては、被処理基板Wに反りが生じることがあるため、多くの場合、前記ホットプレート114の上面側の複数箇所に吸着孔(図示しない真空ポンプなどに接続されて負圧を生じさせる吸着孔)を形成し、当該吸着孔から被処理基板を吸着することにより、被処理基板Wの反りを抑えることが行われている。 By the way, during such heat treatment of the substrate W to be processed, the substrate W to be processed may be warped. Therefore, in many cases, suction holes (vacuum not shown) are formed at a plurality of positions on the upper surface side of the hot plate 114. A warp of the processing target substrate W is suppressed by forming a suction hole that is connected to a pump or the like to generate a negative pressure and sucking the processing target substrate from the suction hole.

特開2003−347198号公報JP, 2003-347198, A

しかしながら、従来より、前述のような複数の吸着孔による吸着だけでは、被処理基板の反りを十分に抑制できず、その結果、被処理基板の全体を均一に加熱できないことが少なくなかった。 However, conventionally, it is often the case that the warp of the substrate to be processed cannot be sufficiently suppressed only by suction using the plurality of suction holes as described above, and as a result, the entire substrate to be processed cannot be heated uniformly.

本発明はこのような従来技術の問題点に着目して為されたものであって、被処理基板の加熱処理時に被処理基板の反りを十分に且つ確実に抑制して、被処理基板の全体を均一に加熱することができる基板処理装置及び方法を提供することを目的とする。また、本発明は、被処理基板の加熱処理時に被処理基板の反りを十分に抑制すると共に、被処理基板の上面側を効率的に加熱又は乾燥させることができ、更に密閉容器内のゴミ等が被処理基板の上面側に容易に固着しないようにすることができる基板処理装置及び方法を提供することを目的とする。 The present invention has been made in view of the above-mentioned problems of the prior art, and sufficiently and reliably suppresses the warp of the substrate to be processed at the time of heat treatment of the substrate to be processed, and An object of the present invention is to provide a substrate processing apparatus and method capable of uniformly heating a substrate. Further, the present invention can sufficiently suppress the warpage of the substrate to be processed during the heat treatment of the substrate to be processed, can efficiently heat or dry the upper surface side of the substrate to be processed, and can further remove dust in the closed container. It is an object of the present invention to provide a substrate processing apparatus and method that can prevent the substrate from easily sticking to the upper surface side of the substrate to be processed.

以上のような課題を解決するための本発明による基板処理装置は、被処理基板を密閉容器内において加熱処理する基板処理装置において、ホットプレート上に配置された被処理基板に対し、その周辺部分を上方から押圧する押圧部と、前記押圧部を前記周辺部分に対し近接離反させる駆動部とを備えたものである。 A substrate processing apparatus according to the present invention for solving the above problems is a substrate processing apparatus that heat-processes a substrate to be processed in a closed container, with respect to the substrate to be processed arranged on a hot plate, a peripheral portion thereof. And a drive unit for moving the pressing unit toward and away from the peripheral portion.

また、本発明による基板処理装置において、前記押圧部は、前記被処理基板の周辺部分又はその近傍に対向する略枠状の支持部の下面側の全部又は一部に、前記被処理基板の周辺部分に対し接触可能に配置されるものであってもよい。 Further, in the substrate processing apparatus according to the present invention, the pressing portion may be provided around the periphery of the substrate to be treated on all or part of a lower surface side of a substantially frame-shaped support portion facing a peripheral portion of the substrate to be treated or the vicinity thereof. It may be arranged so as to be contactable with the portion.

また、本発明において、前記押圧部は、少なくとも前記被処理基板に接触する部分が樹脂により形成されていてもよい。 Further, in the present invention, at least a portion of the pressing portion that contacts the substrate to be processed may be formed of resin.

また、本発明による基板処理装置において、前記駆動部は、前記押圧部を上下動させる機構部であってもよい。 In the substrate processing apparatus according to the present invention, the driving unit may be a mechanism unit that moves the pressing unit up and down.

また、本発明による基板処理装置において、前記押圧部には、前記ホットプレート上の被処理基板をその上面側から非接触で加熱する加熱部が備えられていてもよい。 In the substrate processing apparatus according to the present invention, the pressing unit may be provided with a heating unit that heats the substrate to be processed on the hot plate from the upper surface side in a non-contact manner.

さらに、本発明による基板処理方法は、密閉容器内で被処理基板をホットプレート上に配置して加熱するとき、押圧部を前記被処理基板の周辺部分の上方に配置し、前記押圧部を前記被処理基板の周辺部分に近接させ、前記押圧部により前記被処理基板の周辺部分を上方から押圧するようにしたこと特徴とする基板処理方法。 Further, in the substrate processing method according to the present invention, when the substrate to be processed is placed on a hot plate and heated in a closed container, the pressing portion is arranged above the peripheral portion of the substrate to be processed, and the pressing portion is arranged to A substrate processing method characterized in that a peripheral portion of a substrate to be processed is brought close to the peripheral portion of the substrate to be processed from above by the pressing portion.

本発明に係る基板処理装置によれば、密閉容器内での被処理基板の加熱処理時において、前記押圧部を被処理基板に近接させ、前記押圧部により前記被処理基板の周辺部分を上方から押圧するようにしたので、前記加熱処理時における前記ホットプレート上の被処理基板の反りを十分に且つ確実に抑制し、被処理基板の全体を均一に加熱することができるようになる。 According to the substrate processing apparatus of the present invention, during the heat treatment of the substrate to be processed in the closed container, the pressing portion is brought close to the substrate to be processed, and the pressing portion causes the peripheral portion of the substrate to be processed from above. Since the pressing is performed, the warp of the substrate to be processed on the hot plate during the heat treatment can be sufficiently and reliably suppressed, and the entire substrate to be processed can be uniformly heated.

また、本発明において、前記押圧部を、前記被処理基板の周辺部分又はその近傍に対向する略枠状の支持部(図3参照)の下面側の全部又は一部に、前記被処理基板の周辺部分に対し接触可能に配置するようにしたときは、前記駆動部により前記支持部3を前記被処理基板の方向へ移動させるだけで、前記被処理基板の周辺部分の全体を効率的に押圧することができる。 Further, in the present invention, the pressing portion is provided on all or part of the lower surface side of the substantially frame-shaped supporting portion (see FIG. 3) facing the peripheral portion of the substrate to be processed or the vicinity thereof. When it is arranged so as to be in contact with the peripheral portion, the entire peripheral portion of the substrate to be processed is efficiently pressed only by moving the supporting portion 3 toward the substrate to be processed by the driving unit. can do.

また、本発明において、前記押圧部中の少なくとも前記被処理基板に接触する部分を樹脂により形成したときは、前記被処理基板に接触する部分を金属等により形成したときと比較して、前記押圧部の一部の接触により生じる被処理基板の表面のダメージを、最小に止めることができる。 Further, in the present invention, when at least a portion of the pressing portion that comes into contact with the substrate to be processed is formed of resin, the pressing force is higher than when the portion that comes into contact with the substrate to be processed is formed of metal or the like. The damage on the surface of the substrate to be processed caused by the contact of a part of the portion can be minimized.

また、本発明において、前記駆動部が前記押圧部を上下動させるようにしたときは、前記押圧部を安定的に被処理基板の周辺部分に当接、押圧させることができる。 Further, in the present invention, when the driving unit moves the pressing unit up and down, the pressing unit can be stably brought into contact with and pressed against the peripheral portion of the substrate to be processed.

また、本発明において、前記の押圧部又は支持部に、前記ホットプレート上の被処理基板の上面側を非接触で加熱する加熱部を備えるようにしたときは、前記加熱部により被処理基板の上面側を効率的に加熱し、被処理基板の下面側と上面側との温度差から生じる熱膨張量の差を軽減して被処理基板の反りを抑制することができると共に、被処理基板の上面側に塗布されたレジス等を効率的に加熱又は乾燥させることができ、更に密閉容器内のゴミ等が被処理基板の上面側に容易に固着しないようにすることができる(前記密閉容器内のゴミ等は、被処理基板中の加熱が不十分な部分に対し固着され易いため、被処理基板の上面側を加熱することにより、前記ゴミ等の被処理基板の上面側への固着等が防止されるようになる)。 Further, in the present invention, when the pressing unit or the supporting unit is provided with a heating unit that heats the upper surface side of the substrate to be processed on the hot plate in a non-contact manner, It is possible to efficiently heat the upper surface side, reduce the difference in the amount of thermal expansion caused by the temperature difference between the lower surface side and the upper surface side of the substrate to be processed, and suppress the warp of the substrate to be processed. It is possible to efficiently heat or dry the resist or the like applied on the upper surface side, and further prevent dust or the like in the closed container from easily adhering to the upper surface side of the substrate to be processed (in the closed container). Since the dust and the like are easily fixed to a portion of the substrate to be processed which is not sufficiently heated, by heating the upper surface side of the substrate to be processed, the dust and the like are not fixed to the upper surface side of the substrate to be processed. Will be prevented).

さらに、本発明に係る基板処理方法によれば、密閉容器内で被処理基板をホットプレート上に配置して加熱するとき、押圧部を前記被処理基板の周辺部分の上方に配置し、前記押圧部を前記被処理基板の周辺部分に近接させ、前記押圧部により前記被処理基板の周辺部分を上方から押圧するようにしたので、前記加熱処理時における前記ホットプレート上の被処理基板の反りを十分に且つ確実に抑制し、被処理基板の全体を均一に加熱することができるようになる。 Further, according to the substrate processing method of the present invention, when the substrate to be processed is placed on the hot plate and heated in the closed container, the pressing portion is arranged above the peripheral portion of the substrate to be processed, and the pressing Since the portion is brought close to the peripheral portion of the substrate to be processed and the peripheral portion of the substrate to be processed is pressed from above by the pressing portion, the warp of the substrate to be processed on the hot plate during the heat treatment is prevented. Sufficient and reliable suppression can be achieved, and the entire substrate to be processed can be heated uniformly.

本発明の実施形態1による基板処理装置の構成及び動作を示す概略図である。1 is a schematic diagram showing the configuration and operation of a substrate processing apparatus according to Embodiment 1 of the present invention. 本実施形態1による基板処理装置の構成の一部を示す平面図及び側面図である。FIG. 3 is a plan view and a side view showing a part of the configuration of the substrate processing apparatus according to the first embodiment. 本実施形態1による基板処理装置の一部を示す概略斜視図である。3 is a schematic perspective view showing a part of the substrate processing apparatus according to the first embodiment. FIG. 本発明の実施形態2による基板処理装置の構成の一部を示す平面図及び側面図である。It is a top view and a side view showing a part of composition of a substrate processing device by Embodiment 2 of the present invention. 本実施形態2による基板処理装置の構成及び動作を示す概略図である。FIG. 9 is a schematic diagram showing the configuration and operation of the substrate processing apparatus according to the second embodiment. 本実施形態2による基板処理装置の構成及び動作を示す概略図である。FIG. 9 is a schematic diagram showing the configuration and operation of the substrate processing apparatus according to the second embodiment. 従来の基板処理装置の一例を説明するための概略図である。It is a schematic diagram for explaining an example of the conventional substrate processing device.

〔第1の実施形態〕
以下、本発明の実施形態1による基板処理装置及び方法を図面を用いて説明する。図1は本実施形態1による基板処理装置を示す図、図2(a)は本実施形態1による基板処理装置を示す平面図、図2(b)はその側面図、図3は本実施形態1による基板処理装置の一部を示す概略斜視図である。
[First Embodiment]
Hereinafter, a substrate processing apparatus and method according to Embodiment 1 of the present invention will be described with reference to the drawings. 1 is a diagram showing a substrate processing apparatus according to the first embodiment, FIG. 2A is a plan view showing the substrate processing apparatus according to the first embodiment, FIG. 2B is a side view thereof, and FIG. 3 is this embodiment. 2 is a schematic perspective view showing a part of the substrate processing apparatus according to FIG.

図1〜3において、1は密閉容器(図示省略)内において被処理基板(ワーク)10を加熱するホットプレート、1aは前記ホットプレート1の上面側の複数箇所に設けられた吸着孔であって被処理基板10を吸着して被処理基板10の反りを抑えるための吸着孔(図2参照)である。 1 to 3, 1 is a hot plate for heating a substrate (workpiece) 10 to be processed in a closed container (not shown), and 1a is adsorption holes provided at a plurality of positions on the upper surface side of the hot plate 1. It is an adsorption hole (see FIG. 2) for adsorbing the substrate 10 to be processed and suppressing the warp of the substrate 10 to be processed.

また、図1〜3において、2は、ホットプレート1上の被処理基板10の周辺部分(例えば外周縁部から中心方向に数mm、例えば2〜6mmに渡る部分)10aに対向し、前記周辺部分10aに対して近接離反可能に配置された樹脂製の押圧部(図3に示すように、後記の略枠状の支持部3の下面側に配置された、例えば略枠状の押圧部)である。 Further, in FIGS. 1 to 3, reference numeral 2 is opposed to a peripheral portion (for example, a portion extending from the outer peripheral edge portion to a few mm in the center direction, for example, a portion extending from 2 to 6 mm) 10 a of the substrate 10 to be processed, and the peripheral portion. A resin-made pressing portion arranged so as to be able to move toward and away from the portion 10a (as shown in FIG. 3, for example, a substantially frame-shaped pressing portion arranged on the lower surface side of a substantially frame-shaped support portion 3 described later). Is.

また、図1〜3において、3は前記押圧部2を支持する略枠状の支持部(図3参照)、4は前記支持部3と連結部4a(図2参照)を介して固定された駆動機構部、5は前記駆動機構部4を支持する基部、6は前記支持部3から中央方向に突出するように配置され被処理基板10の略全体(又は一部)と対向するように配置された面状(板状)又は棒状のヒーター(ヒーターを内蔵した加熱部。図1参照)である。なお、図2〜3では、前記棒状ヒーター6は図示を省略している。 Further, in FIGS. 1 to 3, 3 is a substantially frame-shaped support portion (see FIG. 3) that supports the pressing portion 2 and 4 is fixed via the support portion 3 and a connecting portion 4a (see FIG. 2). A drive mechanism portion, 5 is a base portion that supports the drive mechanism portion 4, and 6 is disposed so as to project from the support portion 3 toward the center and faces substantially the whole (or a part) of the substrate to be processed 10. The heater is a sheet-shaped (plate-shaped) or rod-shaped heater (heating unit containing a heater, see FIG. 1). 2 to 3, the rod-shaped heater 6 is not shown.

本実施形態1においては、前記押圧部2中の被処理基板10と接触する部分(図示下端部)は、被処理基板10と面状に接触する平板状に形成されていてもよいし、あるいは、被処理基板10と点状に接触する1つ又は複数のピン又は突起状に形成されていてもよい。 In the first embodiment, the portion (lower end portion in the drawing) of the pressing portion 2 that contacts the substrate 10 to be processed may be formed in a flat plate shape that planarly contacts the substrate 10 to be processed, or Alternatively, it may be formed in the shape of one or a plurality of pins or protrusions that make point contact with the substrate 10 to be processed.

また、本実施形態1においては、前記押圧部2中の被処理基板10と接触する部分(図示下端部)は、接触により被処理基板10の表面にダメージを与え難い素材である樹脂により、形成されている。 In the first embodiment, the portion of the pressing portion 2 that contacts the substrate 10 to be processed (the lower end portion in the drawing) is formed of a resin that is a material that does not easily damage the surface of the substrate 10 to be processed by contact. Has been done.

また、本実施形態1において、前記駆動機構部4は、電動モーター又は油圧回路などから成る駆動機構により、前記押圧部2を上下動させるものである。また、図2(a)において、1aは、図示しない真空源に接続されており且つ前記ホットプレート1の上面側の複数箇所に形成されている吸着孔であって、前記加熱処理中の被処理基板10を吸着する吸着孔である。また、図2(a)及び(b)において、4aは、前記支持部3と前記駆動機構部4とを連結する、例えば板状の連結部である。 Further, in the first embodiment, the drive mechanism section 4 moves the pressing section 2 up and down by a drive mechanism including an electric motor or a hydraulic circuit. Further, in FIG. 2(a), reference numeral 1a denotes adsorption holes which are connected to a vacuum source (not shown) and which are formed at a plurality of positions on the upper surface side of the hot plate 1, and which are treated during the heat treatment. It is an adsorption hole for adsorbing the substrate 10. In addition, in FIGS. 2A and 2B, 4a is, for example, a plate-shaped connecting portion that connects the support portion 3 and the drive mechanism portion 4.

次に本実施形態1の動作を説明する。前記密閉容器内で被処理基板10の加熱処理を行うときは、図1(a)に示すように、ホットプレート1上の被処理基板10は、その下面側と上面側との温度差から生じる膨張量の差及びワーク自体の元々の形状などにより、その中央部が凹むような反りが生じる。 Next, the operation of the first embodiment will be described. When heat-treating the substrate 10 to be processed in the closed container, the substrate 10 to be processed on the hot plate 1 is caused by the temperature difference between the lower surface side and the upper surface side thereof, as shown in FIG. 1A. Due to the difference in the amount of expansion and the original shape of the work itself, a warp in which the central portion is recessed occurs.

このような反りを抑制するため、本実施形態1では、図1(b)に示すように、前記密閉容器内で被処理基板10の加熱処理を行うとき、予め、被処理基板10の周辺部分10aの上方に前記押圧部2を配置し、前記周辺部分10aに対向させておく。そして、前記加熱処理の最初から又は途中から、前記駆動機構部4により、前記支持部3及び前記押圧部2を、被処理基板10に近づくように下降させる。このときの下降動作は、例えば、前記支持部3及び前記押圧部2を何mmだけ下降させるかという下降距離を予め決めてプログラムしておく、又は、前記支持部3及び前記押圧部2を所定速度で下降させながら接触センサ又は画像センサなどで前記押圧部2の下端部が被処理基板10に当接したことを検知したとき停止する、などの方法で行われる。 In order to suppress such warpage, in the first embodiment, as shown in FIG. 1B, when the heat treatment of the substrate 10 to be processed is performed in the closed container, a peripheral portion of the substrate 10 to be processed is previously prepared. The pressing portion 2 is arranged above the 10a and is opposed to the peripheral portion 10a. Then, from the beginning or the middle of the heat treatment, the drive mechanism portion 4 lowers the support portion 3 and the pressing portion 2 so as to approach the target substrate 10. In the descending operation at this time, for example, a descending distance, which is how much the supporting portion 3 and the pressing portion 2 are lowered, is predetermined and programmed, or the supporting portion 3 and the pressing portion 2 are predetermined. The method is carried out by, for example, stopping when the contact sensor or the image sensor detects that the lower end of the pressing portion 2 has come into contact with the substrate 10 to be processed while descending at a speed.

前記下降動作により、前記押圧部2が、被処理基板10の周辺部分10aに当接し、当該周辺部分10aを押圧する。その結果、被処理基板10の周辺部分10aは、前記ホットプレート1と平行な形状、又は前記ホットプレート1に密着した状態となる。以上の動作により、前記被処理基板10の反りが確実に抑制される。 By the descending operation, the pressing portion 2 abuts on the peripheral portion 10a of the substrate 10 to be processed and presses the peripheral portion 10a. As a result, the peripheral portion 10a of the substrate 10 to be processed is in a shape parallel to the hot plate 1 or in a state of being in close contact with the hot plate 1. By the above operation, the warp of the substrate 10 to be processed is surely suppressed.

また、本実施形態1では、前記密閉容器内で被処理基板10の加熱処理を行うとき、前記支持部3から中央方向に突出する面状(板状)又は棒状のヒーター6を駆動して被処理基板10の上面側を効率的に加熱する。これにより、本実施形態1では、被処理基板10の下面側と上面側との温度差(膨張量の差)を軽減して被処理基板10の更なる反りを抑制すると共に、被処理基板の上面側に塗布されたレジスト等を効率的に加熱、乾燥させることができ、更に密閉容器内のゴミ等が被処理基板の上面側に容易に固着しないようにすることができる(前記密閉容器内のゴミ等は、被処理基板中の加熱が不十分な部分に対し固着され易いため、被処理基板の上面側を加熱することにより、前記ゴミ等の被処理基板の上面側への固着が防止されるようになる)。 In addition, in the first embodiment, when the substrate 10 to be processed is subjected to the heat treatment in the closed container, the heater 6 having a planar shape (plate shape) or a bar shape protruding from the supporting portion 3 toward the center is driven. The upper surface side of the processing substrate 10 is efficiently heated. As a result, in the first embodiment, the temperature difference (difference in expansion amount) between the lower surface side and the upper surface side of the target substrate 10 is reduced to suppress further warpage of the target substrate 10, and It is possible to efficiently heat and dry the resist or the like applied on the upper surface side, and further prevent dust and the like in the closed container from easily adhering to the upper surface side of the substrate to be processed (in the closed container). Dust and the like easily adhere to the insufficiently heated portion of the substrate to be processed. Therefore, by heating the upper surface of the substrate to be processed, the dust and the like are prevented from adhering to the upper surface of the substrate to be processed. Will be done).

以上のように、本実施形態1によれば、前記密閉容器(図示省略)内での被処理基板10の加熱処理時において、前記押圧部2を被処理基板10に近接させ、前記押圧部2により前記被処理基板10の周辺部分10aを上方から押圧するようにしたので、前記加熱処理時における前記ホットプレート1上の被処理基板10の反りを十分に且つ確実に抑制して、被処理基板10の全体を均一に加熱することができるようになる。 As described above, according to the first embodiment, during the heat treatment of the substrate 10 to be processed in the closed container (not shown), the pressing portion 2 is brought close to the substrate 10 to be processed, and the pressing portion 2 is pressed. Since the peripheral portion 10a of the substrate 10 to be processed is pressed from above, the warp of the substrate 10 to be processed on the hot plate 1 during the heat treatment is sufficiently and reliably suppressed, and the substrate to be processed 10 is processed. The whole 10 can be heated uniformly.

また、本実施形態1では、前記押圧部2を、前記被処理基板10の周辺部分10aに対向する略枠状の支持部3(図3参照)の下面側の全部又は一部に、前記被処理基板10の周辺部分10aに対し接触可能に配置するようにしたので、前記駆動機構部4により略枠状の支持部3を前記被処理基板10の方向へ移動(下降)させることにより、前記被処理基板10の周辺部分10aを効率的に押圧することができる。 Further, in the first embodiment, the pressing portion 2 is provided on all or part of the lower surface side of the substantially frame-shaped supporting portion 3 (see FIG. 3) facing the peripheral portion 10 a of the substrate 10 to be processed. Since the peripheral portion 10a of the processing substrate 10 is arranged so as to be in contact with the peripheral portion 10a, the driving mechanism portion 4 moves (lowers) the substantially frame-shaped support portion 3 toward the processing substrate 10 to thereby The peripheral portion 10a of the substrate 10 to be processed can be efficiently pressed.

また、本実施形態1では、前記押圧部2中の少なくとも前記被処理基板10に接触する部分(図示下端部)を、樹脂により形成するようにしたので、前記被処理基板10に接触する部分を金属等により形成したときと比較して、前記押圧部2の一部が接触することにより被処理基板10の表面に生じるダメージを、最小に止めることができる。 Further, in the first embodiment, at least the portion (lower end portion in the drawing) in the pressing portion 2 that contacts the substrate 10 to be processed is made of resin, so that the portion that contacts the substrate 10 to be processed is Compared with the case where it is formed of metal or the like, it is possible to minimize the damage caused on the surface of the substrate 10 to be processed due to the contact of a part of the pressing portion 2.

また、本実施形態1では、前記駆動機構部4を、前記押圧部2を上下動させる機構部として構成するようにしたので、前記押圧部2を安定的に前記被処理基板10の周辺部分10aの方向に移動させ、前記被処理基板10の周辺部分10aに接触、押圧させることができる。 Further, in the first embodiment, the drive mechanism section 4 is configured as a mechanism section that moves the pressing section 2 up and down, so that the pressing section 2 is stably provided in the peripheral portion 10a of the target substrate 10. It is possible to make contact with and press the peripheral portion 10a of the substrate 10 to be processed.

また、本実施形態1では、前記支持部3に、前記ホットプレート1上の被処理基板10の上面側を非接触で加熱する面状(板状)又は棒状のヒーター(加熱部)6を備えるようにしたので、前記面状(板状)又は棒状のヒーター6により被処理基板10の上面側の略全体を効率的に加熱し、被処理基板10の下面側と上面側との温度差から生じる熱膨張量の差を軽減して被処理基板10の反りを抑制することができると共に、被処理基板10の上面側に塗布されたレジスト等を効率的に加熱、乾燥させることができ、更に密閉容器内のゴミ等が被処理基板10の上面側に容易に固着しないようにすることができる(前記密閉容器内のゴミ等は被処理基板10中の加熱が不十分な部分に対し固着され易いため、被処理基板10の上面側を加熱することにより、前記ゴミ等の被処理基板10の上面側への固着が防止され易くなる)。 Further, in the first embodiment, the supporting portion 3 is provided with a planar (plate-shaped) or rod-shaped heater (heating portion) 6 for heating the upper surface side of the target substrate 10 on the hot plate 1 in a non-contact manner. Therefore, substantially the entire upper surface side of the substrate 10 to be processed is efficiently heated by the planar (plate-shaped) or rod-shaped heater 6, and the temperature difference between the lower surface side and the upper surface side of the substrate 10 to be processed is determined. The difference in the amount of thermal expansion generated can be reduced to suppress the warp of the substrate to be processed 10, and the resist or the like applied on the upper surface side of the substrate to be processed 10 can be efficiently heated and dried. It is possible to prevent dust and the like in the closed container from easily adhering to the upper surface side of the substrate 10 to be processed (the dust and the like in the closed container are fixed to a portion of the substrate 10 to be processed which is not sufficiently heated). Since it is easy, by heating the upper surface side of the substrate 10 to be processed, it becomes easier to prevent the dust and the like from being fixed to the upper surface side of the substrate 10 to be processed).

さらに、本実施形態1では、本実施形態1においては、前記押圧部2だけで被処理基板10の反りを十分に抑制することができるので、図2に示すような被処理基板10の反りを抑えるための吸着孔1bをホットプレート1に設けることを不要として、基板処理装置のコスト低減を図ることもできる。 Further, in the first embodiment, in the first embodiment, since the warp of the substrate 10 to be processed can be sufficiently suppressed only by the pressing portion 2, the warp of the substrate 10 to be processed as shown in FIG. It is also possible to reduce the cost of the substrate processing apparatus by eliminating the need to provide the suction plate 1b for suppressing the hot plate 1.

〔第2の実施形態〕
次に本発明の実施形態2による基板処理装置及び方法を説明する。前記実施形態1では、一つの被処理基板(ワーク)10の反りを抑制するために前記被処理基板10の周辺部分10aを前記押圧部2が押圧するものであった。これに対し、本実施形態2では、後述するように、計4個の押圧部12が互いに連結されて一体的に駆動されるように構成している。そして、このように構成した計4個の押圧部12が、計4個の被処理基板10(又は4個以下の個数の被処理基板10)の各周辺部分10aを、それぞれ押圧して、それらの反りを抑制するようにしている。
[Second Embodiment]
Next, a substrate processing apparatus and method according to Embodiment 2 of the present invention will be described. In the first embodiment, the pressing portion 2 presses the peripheral portion 10a of the processing target substrate 10 in order to suppress the warp of one processing target substrate (workpiece) 10. On the other hand, in the second embodiment, as will be described later, a total of four pressing portions 12 are connected to each other and integrally driven. The four pressing portions 12 thus configured press the peripheral portions 10a of the four substrates 10 to be processed (or the number of substrates 10 to be processed of 4 or less in total), respectively. I try to suppress the warp.

すなわち、図4〜6において、11は密閉容器(図示省略)内において被処理基板(ワーク)10を加熱するホットプレート、11aは前記ホットプレート11の上面側の複数箇所に設けられた吸着孔(図4参照)である。また、13は、密閉容器(図示省略)中に配置された計4個(又はそれ以下の複数個)の被処理基板(ワーク)10の周辺部分10aと対向できるように、略四角の枠状の部分とその内部に略十字状の部分が形成された支持部である。また、12は前記支持部13の下側(被処理基板10側)に配置された押圧部、14は前記支持部13を上下動させる駆動機構部、14aは前記支持部13と前記駆動機構部14とを連結する平板状の連結部である。なお、図4〜6では、前記実施形態1において説明した前記面状(板状)又は棒状のヒーター6(図1参照)の図示を、省略している。 That is, in FIGS. 4 to 6, 11 is a hot plate that heats the substrate (workpiece) 10 to be processed in a closed container (not shown), and 11a are suction holes (provided at a plurality of positions on the upper surface side of the hot plate 11). (See FIG. 4). Further, 13 is a substantially rectangular frame shape so that it can face the peripheral portion 10a of a total of four (or a plurality of substrates) 10 to be processed arranged in a closed container (not shown). And a support portion in which a substantially cross-shaped portion is formed. Further, 12 is a pressing portion arranged below the support portion 13 (the substrate 10 side), 14 is a drive mechanism portion for moving the support portion 13 up and down, and 14a is the support portion 13 and the drive mechanism portion. It is a flat plate-shaped connecting portion that connects 14 with. 4 to 6, the planar (plate-shaped) or rod-shaped heater 6 (see FIG. 1) described in the first embodiment is omitted.

本実施形態2は、前述のような構成を有しているので、前述した実施形態1の作用効果を奏することができ、さらに、そのような作用効果を、計4個又はそれ以下の複数個の被処理基板10の各周辺部分10aに対して、前記一度の下降動作を行うだけで、同時に実現することができる。 Since the second embodiment has the above-described configuration, it can achieve the effects of the above-described first embodiment, and further, such effects can be obtained by a total of four or less. It is possible to realize the above simultaneously by only performing the lowering operation once for each peripheral portion 10a of the substrate 10 to be processed.

すなわち、図5は、密閉容器(図示省略)内で被処理基板10をホットプレート11上に配置して加熱するときに、前記押圧部12を前記被処理基板10の周辺部分10aの上方に配置したときの状態を示す図である。また、図6は、前記押圧部12を前記被処理基板10の周辺部分10aに向けて下降、近接させ、前記押圧部12により前記被処理基板10の周辺部分10aを上方から押圧したときの状態を示す図である。 That is, FIG. 5 shows that when the target substrate 10 is placed on the hot plate 11 and heated in a closed container (not shown), the pressing portion 12 is disposed above the peripheral portion 10 a of the target substrate 10. It is a figure which shows the state when doing. In addition, FIG. 6 shows a state in which the pressing portion 12 is lowered toward the peripheral portion 10a of the substrate 10 to be processed and brought close to the peripheral portion 10a of the substrate 10, and the peripheral portion 10a of the substrate 10 is pressed by the pressing portion 12 from above. FIG.

図5,6に示すように、本実施形態2では、計4個の押圧部12が互いに連結されて一体的に、前記被処理基板10の周辺部分10aの上方に配置され(図5参照)、前記計4個の押圧部12が一体的に、被処理基板10の周辺部分10aの方に下降して近接し、さらに前記計4個の押圧部12が一体的に、前記被処理基板10の周辺部分10aを押圧する(図6参照)。このような動作により、本実施形態2では、前記計4個の押圧部12が、計4個の被処理基板10(又は4個以下の個数の被処理基板10)の各周辺部分10aを、それぞれ押圧し、前記各被処理基板10の反りをそれぞれ抑制するようにしている。 As shown in FIGS. 5 and 6, in the second embodiment, a total of four pressing portions 12 are connected to each other and integrally arranged above the peripheral portion 10a of the substrate 10 to be processed (see FIG. 5). , The total of four pressing portions 12 are integrally lowered to approach the peripheral portion 10a of the substrate 10 to be processed, and the total of four pressing portions 12 are integrally connected to the substrate 10 to be processed. The peripheral portion 10a of is pressed (see FIG. 6). Due to such an operation, in the second embodiment, the total of four pressing portions 12 cause the peripheral portions 10a of the total of four target substrates 10 (or the target substrates 10 of 4 or less) to move. Each of them is pressed to suppress the warp of each substrate 10 to be processed.

以上、本発明の実施形態1,2について説明したが、本発明は前記各実施形態として述べたものに限定されるものではなく、様々な修正及び変更が可能である。例えば、前記実施形態1に関する図1などにおいては、前記押圧部2は被処理基板10の周辺部分10aに対して面状に押圧するように示しているが、本発明では、前記押圧部2の下端部をピン状又は突起状に形成して、すなわち前記押圧部2の下端部に1つ又は複数のピン又は突起を形成して、被処理基板10の周辺部分10aに対して点状に押圧するようにしてもよい。また、前記実施形態1では、前記駆動機構部4を前記支持部3と連結させて前記駆動機構部4が前記支持部3を上下動させるようにしたが、本発明においては、前記駆動機構部4を前記押圧部2と連結させて前記駆動機構部4が前記押圧部2を直接に上下動させるようにしてもよい。さらに、前記実施形態1では、前記面状(板状)又は棒状のヒーター6は前記枠状の支持部3に備えるようにしたが、本発明では前記面状(板状)又は棒状のヒーター6を前記押圧部2に備えるようにしてもよい。 Although the first and second embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments and various modifications and changes can be made. For example, in FIG. 1 and the like relating to the first embodiment, the pressing portion 2 is shown to press the peripheral portion 10a of the substrate 10 to be processed in a planar manner. The lower end portion is formed in a pin shape or a protrusion shape, that is, one or a plurality of pins or protrusions are formed in the lower end portion of the pressing portion 2 and is pressed in a dot shape against the peripheral portion 10a of the substrate 10 to be processed. You may do so. Further, in the first embodiment, the drive mechanism section 4 is connected to the support section 3 so that the drive mechanism section 4 moves the support section 3 up and down. However, in the present invention, the drive mechanism section is used. 4 may be connected to the pressing portion 2 so that the drive mechanism portion 4 directly moves the pressing portion 2 up and down. Further, in the first embodiment, the planar (plate-shaped) or rod-shaped heater 6 is provided in the frame-shaped support portion 3, but in the present invention, the planar (plate-shaped) or rod-shaped heater 6 is provided. May be provided in the pressing portion 2.

1,11 ホットプレート
1a,11a 吸着孔
2,12 押圧部
3,13 支持部
4,14 駆動機構部
4a,14a 連結部
6 面状(板状)又は棒状のヒーター(加熱部)
10 被処理基板
10a 被処理基板の周辺部分
1, 11 Hot plate 1a, 11a Suction hole 2, 12 Pressing part 3, 13 Support part 4, 14 Drive mechanism part 4a, 14a Connecting part 6 Planar (plate-shaped) or rod-shaped heater (heating part)
10 processed substrate 10a peripheral part of processed substrate

本発明は液晶表示装置、有機EL表示装置又は半導体製造装置などに使用されるガラス製又は樹脂製等の被処理基板を加熱等する場合に使用される基板処理装置に関する。
The present invention relates to a substrate processing apparatus used for heating a substrate to be processed such as a glass or a resin used in a liquid crystal display device, an organic EL display device, a semiconductor manufacturing device, or the like.

本発明はこのような従来技術の問題点に着目して為されたものであって、被処理基板の加熱処理時に被処理基板の反りを十分に且つ確実に抑制して、被処理基板の全体を均一に加熱することができる基板処理装置を提供することを目的とする。また、本発明は、被処理基板の加熱処理時に被処理基板の反りを十分に抑制すると共に、被処理基板の上面側を効率的に加熱又は乾燥させることができ、更に密閉容器内のゴミ等が被処理基板の上面側に容易に固着しないようにすることができる基板処理装置を提供することを目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and sufficiently and reliably suppresses the warp of the substrate to be processed at the time of heat treatment of the substrate to be processed, and It is an object of the present invention to provide a substrate processing apparatus capable of uniformly heating a substrate. Further, the present invention can sufficiently suppress the warp of the substrate to be processed during the heat treatment of the substrate to be processed, can efficiently heat or dry the upper surface side of the substrate to be processed, and can further remove dust or the like in the closed container. It is an object of the present invention to provide a substrate processing apparatus which can prevent the substrate from easily adhering to the upper surface side of the substrate to be processed.

以上のような課題を解決するための本発明による基板処理装置では、ホットプレート上に配置された被処理基板に対し、その周辺部分を上方から押圧する樹脂製の押圧部と前記押圧部を支持する支持部が備えられている。
In the substrate processing apparatus according to the present invention for solving the above problems, with respect to the substrate to be processed arranged on the hot plate, a resin-made pressing portion for pressing the peripheral portion from above and the pressing portion are supported. A support portion for performing the operation is provided.

また、本発明による基板処理装置においては、前記押圧部又は前記支持部に、前記押圧部又は前記支持部から被処理基板の上面側の中央方向に延在するように備えられた上面側加熱部が備えられている。
Further, in the substrate processing apparatus according to the present invention, the pressing portion or the supporting portion is provided on the upper surface side heating portion so as to extend from the pressing portion or the supporting portion toward the center of the upper surface side of the substrate to be processed. Is provided.

また、本発明による基板処理装置においては、前記上面側加熱部は前記ホットプレート上の被処理基板の上面側を非接触で加熱するものである。
Further, in the substrate processing apparatus according to the present invention, the upper surface side heating unit heats the upper surface side of the target substrate on the hot plate in a non-contact manner.

また、本発明による基板処理装置においては、前記押圧部を、前記押圧部が前記被処理基板の周辺部分に対して近接離反するように上下動させる機構部が備えられている。
Further, the substrate processing apparatus according to the present invention is provided with a mechanism portion that moves the pressing portion up and down so that the pressing portion moves closer to and away from the peripheral portion of the substrate to be processed.

また、本発明による基板処理装置においては、前記駆動部は前記ホットプレートの側方に配置されている。
Further, in the substrate processing apparatus according to the present invention, the drive unit is arranged laterally of the hot plate.

さらに、本発明による基板処理装置においては、前記押圧部は、前記被処理基板の周辺部分に対向する略枠状の支持部の下面側の全部又は一部に、前記被処理基板の周辺部分に対し接触可能に配置されるものであってもよい。
Further, in the substrate processing apparatus according to the present invention, the pressing portion is provided on all or part of the lower surface side of the substantially frame-shaped support portion facing the peripheral portion of the substrate to be processed, and on the peripheral portion of the substrate to be processed. It may be arranged so as to be in contact with each other.

Claims (6)

被処理基板を密閉容器内において加熱処理する基板処理装置において、ホットプレート上に配置された被処理基板に対し、その周辺部分を上方から押圧する押圧部と、前記押圧部を前記周辺部分に対し近接離反させる駆動部とを備えたことを特徴とする基板処理装置。 In a substrate processing apparatus for heat-treating a substrate to be processed in a closed container, a substrate to be processed arranged on a hot plate is pressed against a peripheral portion thereof from above, and the pressing portion is pressed against the peripheral portion. A substrate processing apparatus, comprising: a drive unit for moving closer to and away from each other. 前記押圧部は、前記被処理基板の周辺部分又はその近傍に対向する略枠状の支持部の下面側の全部又は一部に、前記被処理基板の周辺部分に対し接触可能に配置されるものである請求項1に記載の基板処理装置。 The pressing portion is arranged so as to be able to come into contact with the peripheral portion of the substrate to be processed, on all or part of the lower surface side of the substantially frame-shaped support portion facing the peripheral portion of the substrate to be processed or its vicinity. The substrate processing apparatus according to claim 1. 前記押圧部は、少なくとも前記被処理基板に接触する部分が樹脂により形成されている請求項1又は2に記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein at least a portion of the pressing portion that comes into contact with the target substrate is made of resin. 前記駆動部は、前記押圧部を上下動させる機構部である請求項1から3までのいずれかに記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the drive unit is a mechanism unit that moves the pressing unit up and down. 前記押圧部又は前記支持部には、前記ホットプレート上の被処理基板の上面側を非接触で加熱する加熱部が備えられている請求項1から4までのいずれかに記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the pressing unit or the support unit is provided with a heating unit that heats the upper surface side of the substrate to be processed on the hot plate in a non-contact manner. 密閉容器内で被処理基板をホットプレート上に配置して加熱するとき、押圧部を前記被処理基板の周辺部分の上方に配置し、前記押圧部を前記被処理基板の周辺部分に近接させ、前記押圧部により前記被処理基板の周辺部分を上方から押圧するようにしたことを特徴とする基板処理方法。
When the substrate to be processed is placed on a hot plate and heated in a closed container, the pressing portion is arranged above the peripheral portion of the processing substrate, and the pressing portion is brought close to the peripheral portion of the processing substrate, A substrate processing method, wherein the pressing portion presses a peripheral portion of the substrate to be processed from above.
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JP2006319093A (en) * 2005-05-12 2006-11-24 Dainippon Screen Mfg Co Ltd Substrate heat treatment apparatus
JP2006339485A (en) * 2005-06-03 2006-12-14 Dainippon Screen Mfg Co Ltd Wafer heat treatment apparatus
JP2007059675A (en) * 2005-08-25 2007-03-08 Tokyo Electron Ltd Processing method for substrate and processing apparatus for substrate
JP2007158074A (en) * 2005-12-06 2007-06-21 Dainippon Screen Mfg Co Ltd Substrate heat treatment apparatus
JP2016184679A (en) * 2015-03-26 2016-10-20 株式会社テックインテック Heat treatment device

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Publication number Priority date Publication date Assignee Title
JP2006319093A (en) * 2005-05-12 2006-11-24 Dainippon Screen Mfg Co Ltd Substrate heat treatment apparatus
JP2006339485A (en) * 2005-06-03 2006-12-14 Dainippon Screen Mfg Co Ltd Wafer heat treatment apparatus
JP2007059675A (en) * 2005-08-25 2007-03-08 Tokyo Electron Ltd Processing method for substrate and processing apparatus for substrate
JP2007158074A (en) * 2005-12-06 2007-06-21 Dainippon Screen Mfg Co Ltd Substrate heat treatment apparatus
JP2016184679A (en) * 2015-03-26 2016-10-20 株式会社テックインテック Heat treatment device

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