KR102014279B1 - Substrate process apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, comprising: a main body having an upper portion open, an inner space formed therein, and an exhaust port formed at a lower portion thereof; a top lid provided on an upper portion of the main body, and covering at least a portion of the upper portion of the main body; A substrate support provided inside the main body to support the substrate, and a gas ejection body mounted on the top lead to face the substrate support to inject a process gas into the substrate support, the top lead extending in the vertical direction An extension part is formed therein to form a space in which the substrate is processed, and an exhaust path of the process gas is formed between an edge of the substrate support and an inner wall of the extension in the space in which the substrate is processed, thereby facilitating a substrate processing space. It relates to a substrate processing apparatus that can be formed.

Description

Substrate process apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of easily forming a substrate processing space.

Generally, in order to manufacture a semiconductor device, a display device, or a solar cell, various processes are performed in a substrate processing apparatus including a vacuum chamber. For example, a process of loading a substrate into a chamber, depositing a thin film on the substrate, or etching the thin film is performed. At this time, the substrate is supported by the substrate support provided in the chamber, and the process gas is injected into the substrate through a gas spraying body provided on the substrate support.

The substrate processing apparatus includes a chamber in which a substrate processing space is formed, a gas sprayer for injecting a process gas into the chamber, and a substrate support installed on the substrate to support the substrate thereon. At this time, the chamber is configured to include a main body with an open top and a top lead covering the upper part of the main body, and the substrate processing space is formed over the entire interior of the main body.

However, the space formed inside the chamber is substantially larger than the space between the top lid and the substrate support, which is the space where the substrate is processed. Therefore, since the amount of the process gas supplied into the chamber for processing the substrate must be relatively higher than the amount of the process gas used to substantially process the substrate, the process gas is unnecessarily consumed, thereby increasing the process cost. In addition, since the time for purging the inside of the chamber after processing the substrate increases, the overall process time increases, thereby lowering productivity.

In addition, the substrate processing space is formed between the top lead and the substrate support, wherein a gate valve for loading and unloading the substrate is provided around the substrate processing space. As a result, since the substrate processing space is not symmetrically formed, it is difficult to secure process uniformity.

KR 2009-0118676A

The present invention provides a substrate processing apparatus capable of efficiently forming a substrate processing space.

The present invention provides a substrate processing apparatus that can reduce the amount of process gas used, shorten the process time, and improve process efficiency and productivity.

The present invention provides a substrate processing apparatus capable of symmetrically forming a substrate processing space to improve process uniformity.

A substrate processing apparatus according to an embodiment of the present invention includes a main body having an upper portion open, an inner space formed therein, and an exhaust port formed at a lower portion thereof, a top lead provided at an upper portion of the main body, and covering at least a portion of the upper portion of the main body; And a substrate support provided inside the main body to support a substrate, and a gas sprayer mounted on the top lead to face the substrate support to inject a process gas into the substrate support, wherein the top lead is disposed in a vertical direction. And an extension part extending therein to form a space in which the substrate is processed, and an exhaust path of the process gas is formed between an edge of the substrate support and an inner wall of the extension in the space in which the substrate is processed. .

The top lid is provided with a plurality of spaces in which the substrate is processed, and the gas injector and the substrate support are provided in a number corresponding to the number of spaces in which the substrate is processed , and the main body is disposed between the plurality of substrate supports. It may be provided with a substrate moving unit for moving the substrate.

The substrate moving part is disposed in the main body in a vertical direction and is rotated, rotated and raised and lowered, and is connected in a horizontal direction to an upper portion of the rotating shaft, and a turntable having a plurality of openings through which the plurality of substrate supports pass through. And a plurality of substrate support rings disposed on the turntable at positions corresponding to the openings to support edges of the substrates, wherein the openings are provided with protrusions inside the openings to support the substrate support rings. The support ring may be selectively supported on the substrate support and the turntable.

The top lead may be provided with a curtain gas injector for injecting the curtain gas.

The curtain gas injector may include a curtain gas diffusion space communicating with an external curtain gas supply source in the top lid, and a spray plate coupled to the curtain gas diffusion space under the top lid and having a plurality of injection holes formed therein. can do.

The curtain gas diffusion space may be divided into a plurality of layers in the curtain gas diffusion space, and a diffusion plate may be provided to form a plurality of injection holes.

An insertion hole penetrating the top lead in the vertical direction may be formed in the top lead, and a stepped support may be formed at an inner edge of the insertion hole to support the gas injection body inserted through the insertion hole.

An insulator may be provided between the top lead and the gas sprayer.

The inner circumferential surface of the extension may be formed as one continuous surface.

At least a portion of the extension may be dug out of the space where the substrate is processed so that the width of the exhaust path increases toward the bottom.

A curved surface may be formed on at least a portion of the extension.

The substrate processing apparatus according to the embodiment of the present invention can easily form a substrate processing space in the chamber. That is, by forming an extension part extending in the vertical direction in the lower portion of the top lid, it is possible to efficiently form a space in which the substrate is processed. As a result, the substrate processing space is unnecessarily increased, so that the amount of process gas used can be reduced, and the process time can be shortened. Therefore, process efficiency and productivity can be improved.

In addition, since the substrate processing space can be formed symmetrically, the process yield can be improved by improving the uniformity of the substrate processing process.

In addition, when processing a plurality of substrates in the chamber, it is possible to easily separate the space in which each substrate is processed. In addition, it is possible to reduce the cost of installing and maintaining the substrate processing apparatus by facilitating the desorption of the gas injector. In addition, the curtain gas injection nozzle may be provided at the extension to independently form a space where the substrate is processed, thereby improving substrate processing efficiency.

1 is an exploded perspective view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.
2 is a plan view of a portion of a substrate processing apparatus according to an embodiment of the present invention.
3 is a cross-sectional view of the substrate processing apparatus in which the substrate processing apparatus shown in FIG. 1 is shown along the line X-X 'shown in FIG.
4 is a cross-sectional view showing a main part configuration of a substrate processing apparatus according to an embodiment of the present invention.
5 is a perspective view schematically showing the configuration of a substrate support according to an embodiment of the present invention.
6 to 8 are cross-sectional views schematically showing the configuration of a substrate processing apparatus according to a modification of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, only the embodiments to make the disclosure of the present invention complete, and to those skilled in the art the scope of the invention to It is provided to inform you. In the drawings, the components are exaggerated or enlarged in order to clearly express each component. In the drawings, the same reference numerals refer to the same elements.

1 is an exploded perspective view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a plan view of a portion of the substrate processing apparatus according to an embodiment of the present invention, Figure 3 is a substrate processing apparatus shown in FIG. 2 is a cross-sectional view of the substrate processing apparatus shown along the line X-X 'shown in FIG. 2, FIG. 4 is a cross-sectional view showing the main configuration of the substrate processing apparatus according to the embodiment of the present invention, and FIG. A perspective view schematically showing the configuration of a substrate support according to an example.

A substrate processing apparatus according to an embodiment of the present invention is an apparatus for processing a semiconductor or various substrates in a vacuum atmosphere, and exemplarily describes an apparatus capable of processing a plurality of substrates in a single chamber.

Referring to FIG. 1, a substrate processing apparatus according to an exemplary embodiment may include a chamber 100 forming a processing space, a substrate support 130 disposed inside the chamber 100, and supporting a substrate W and a substrate. A gas sprayer 110 disposed to face the support 130 and injecting a process gas toward the substrate support 130, and a substrate mover 140 positioned outside the substrate support 130 to assist transfer of the substrate; do.

The chamber 100 includes a main body 101 having an open upper portion, and a top lid 102 installed on the upper portion of the main body 101 to be opened and closed.

The main body 101 has a substrate support mounting groove 109 in which the substrate support 130 is disposed, and the substrate support mounting groove 109 has a shape corresponding to the shape of the substrate support 134 described later, for example, a circular shape. It may be formed to have a predetermined depth. The substrate support seating recess 109 may be formed to a depth of a vertical movement range of the substrate support 134. Through such a configuration, it is possible to reduce the amount of process gas supplied into the chamber 100 for processing the substrate by reducing the space formed inside the chamber 100, which is required when purging the interior of the chamber 100. It can save time. In addition, a through hole into which the support shaft 132 of the substrate support 130 is inserted may be formed in the substrate support mounting recess 109. When the substrate 100 processes a plurality of substrates, for example, four substrates, four substrate support seating recesses 109 may be formed. In this case, the four substrate support seating grooves 109 may be formed with an exhaust passage (not shown) formed horizontally along the bottom surface of the main body 101 to communicate with the adjacent substrate support seating grooves 109 through the side, The exhaust passages are connected to an exhaust port 300 formed through the bottom of the main body 101 in the vertical direction, and are connected to an exhaust line 310 connected to an external vacuum pump 320. At this time, the bottom of the body 101 may be provided with a flow path cover (108a, 108b, 108c, 108d) covering the exhaust passages. In this way, the substrate support seating recess 109 in which the substrate support 134 of the substrate support 130 is seated in the main body 101 is formed, and the substrate support seating recess 109 communicates with the exhaust flow path, and then the exhaust port. By connecting to the (300) it is possible to significantly reduce the substrate processing space to be described later to reduce the amount of process gas supplied into the chamber during substrate processing, and to reduce the time required to purge the interior of the chamber process efficiency and productivity Can improve.

In addition, a through hole 107 may be formed at the bottom of the main body 101 to insert the rotating shaft constituting the substrate moving part 140, and the through hole 107 may be formed at the center of the main body 101.

Gates 105a and 105b for loading and unloading the substrate into the chamber 100 may be formed on side surfaces of the main body 101.

The top lead 102 is coupled to the upper portion of the main body 101 to close the inside of the main body 101. In this case, the top lead 102 may be formed to cover the entire upper portion of the main body 101, and as shown, may be combined with the gas sprayer 110 to cover at least a portion of the upper portion of the main body 101. It may be formed to be. In the present invention, when configuring the top lid 102 as shown in Figure 1, in order to facilitate the mounting and separation of the gas injector 110, the insertion hole 104 penetrating the top lead 102 in the vertical direction By forming a, the gas injection body 110 can be inserted and fixed through the insertion hole 104 from the top of the top lid 102. At this time, the step 103 is formed along the inner edge of the insertion hole 104, so that the upper side of the insertion hole 104 is formed in the form of a light beam narrower than the lower side to the gas injection body 110 of the insertion hole 104 It can be inserted through the top to be supported by the step (103). Accordingly, a step 112 having a shape corresponding to the side shape of the top lead 102 may be formed on the sidewall of the gas sprayer 110 so as to be supported by the step 103 of the top lid 102. That is, the gas injection body 110 may also be formed in the shape of a light beam narrower than the upper side where the process gas flows into the lower side where the process gas is injected, and may be engaged with and fixed to the insertion hole 104. Through such a configuration, the gas injection body 110 may be seated on the sidewall of the top lead 102 to cover the upper portion of the main body 101 of the chamber 100, and may be easily separated from the top lead 102. .

In addition, the top lead 102 may have an extension portion 102 ′ extending in the vertical direction at the bottom thereof. That is, as shown in FIG. 5, the top lead 102 may be formed by extending the length of the top lead by 'Y' longer than the bottom surface from which the process gas is injected from the gas sprayer 110. Through this configuration, the substrate processing space in the chamber 100 may be substantially formed in the top lid 102 of the body 101, that is, by the extension 102 ′. In this case, when the substrate support 134 is raised for the substrate processing, the extension portion 102 'is formed such that an end thereof is disposed up to a height at which the upper surface of the substrate support 134 is located, thereby supporting the substrate support for the substrate processing. When 134 is raised, the substrate processing space may be formed in the top lead 102. Such a substrate processing space may be formed in a number corresponding to the number of substrate support units 130. The extension portion 102 'is formed to connect the edge of the top lead 102 and the center of the top lead 102 and the edge of the top lead 102 so that a substrate processing space is formed between the extension portions 102'. Can be. In this case, the inner circumferential surface of the extension portion 102 ′ may form a substrate processing space having a symmetrical structure by forming one continuous surface in which no structure exists. In other words, when the substrate support on which the substrate is mounted for substrate processing is raised, the distance from the edge of the substrate support 134 or the edge of the substrate to the inner wall of the extension 102 ′ may all be the same. This is because no structure exists in the horizontal direction in the substrate processing space. In the conventional case, the substrate processing space is formed in the main body 101 in which the gate on which the substrate is loaded and unloaded is formed so that the substrate processing space is asymmetrically formed by the gate, whereas in the embodiment of the present invention, the substrate processing space is formed. The inner circumferential surface of the extension portion 102 'is 360 degrees continuous because there is no structure such as an exhaust port connected to a gate or an exhaust line in the lower portion of the top lid 102, that is, the extension portion 102'. By forming the surface of the substrate, a symmetrical substrate processing space can be formed.

The gas injection bodies 110 may be provided in the plurality of substrate processing spaces formed as described above. The gas injection body 110 may form an upper portion of the chamber 100 together with the top lead 102. The gas injectors 110 may all be connected to a single gas source for supplying the same kind of gas, or may be connected to a plurality of gas sources for supplying different types of gas, respectively. The gas injection body 110 may have a predetermined area facing and similar to the substrate support 134, and may be manufactured as a shower head type having a plurality of injection holes.

On the other hand, the gas injection body 110 may be used as an upper electrode when forming a plasma in the chamber 100, it may be formed of a conventional conductor. In addition, the top lid 102 and the main body 101 may also be formed of a conductor. Therefore, when power is applied to the gas injector 110 to form a plasma inside the chamber 100, insulation between the top lead 102 and the gas injector 110 is required so that RF power can be stably applied. . Accordingly, the gas injector 110 and the top lead 102 may be insulated from each other through the insulator 120 between the gas injector 110 and the top lead 102. In this case, the insulator 120 may be formed to have a concave-convex structure corresponding to the step formed on the sidewalls of the top lead 102 and the gas sprayer 110. Here, the insulator 120 may be formed in a separate configuration, but may also be formed by coating an insulating material on the sidewall of the top lead 102 or the gas injector 110.

The substrate support 130 is a structure for supporting the substrate W, and is installed below the chamber 100. The substrate support 130 may be connected to a substrate support 134 on which the substrate is mounted, and a support shaft 132 for raising and lowering the substrate support 134 under the substrate support 134.

Referring to FIG. 5, the substrate support 134 may have a plate shape having a predetermined thickness and may have a shape similar to that of the substrate W. Referring to FIG. For example, if the substrate is a circular wafer, it can be produced in the shape of a disc. Of course, the present invention is not limited thereto and may be changed into various shapes. The substrate support 134 is provided in the horizontal direction inside the chamber 100, and the support shaft 132 is vertically connected to the bottom surface of the substrate support 134. The support shaft 132 is connected to a driving means (not shown) such as an external motor through a through hole to raise and lower the substrate support 134. In this case, the sealing shaft 132 and the through hole may be sealed by using a bellows (not shown) to prevent the vacuum inside the chamber 100 from being released in the process of processing the substrate. The substrate support 134 is raised during substrate processing to form a substrate processing space together with the extension 102 '. A predetermined space is formed between the edge of the substrate support 134 and the inner wall of the extension 102'. It can be formed and used as the exhaust path of the process gas.

The substrate support 134 is not particularly limited in form and structure as long as the substrate support 134 is seated and supported. At this time, as illustrated in FIG. 5, the substrate support ring 150 supporting the substrate W on the upper side may be stably seated at the correct position. The stepped portion 136 on which the 150 is seated may be formed. The substrate support ring 150 will be described later in detail.

The substrate support 134 may include an insulator 120 material. That is, the entire substrate support 134 may be made of the insulator 120 or a part thereof may be made of the insulator 120, and the insulator 120 is formed by coating the surface of the substrate support 134 in the form of a thin film. May be In this case, various ceramic materials may be used as the insulator 120. For example, aluminum nitride (AlN), silicon carbide (SiC), or the like may be used. In addition, the substrate support 134 may be provided with a heating element (not shown) for heating it, the heating element is connected to an external power source through a conductor (not shown). When power is applied to the heating element, the substrate support 134 is heated, thereby heating the substrate W seated on the substrate support 134. The heating element may be installed in various ways and structures, and is not particularly limited. Tungsten (W), molybdenum (Mo) and the like may be used as the heating element.

The substrate support 134 not only supports the substrate but may also function as a lower electrode. That is, it may serve as a lower electrode so that an electric field is formed between the substrate support 134 and the gas sprayer 110. For example, RF power may be applied to the gas injector 110, and ground power may be applied to the substrate support 134 to form an electric field therebetween and generate plasma. In this case, a ground electrode (not shown) may be installed in the substrate support 134, and the substrate support 134 may be grounded through the ground electrode.

The substrate support 130 may be provided in plurality in the chamber 100. For example, as shown in FIGS. 1 and 2, four substrate supporting portions 130a, 130b, 130c, and 130d may be provided in the chamber 100. At this time, the substrate support portions 130a, 130b, 130c, and 130d may be symmetrically disposed. That is, the center of the chamber 100 may be arranged in point symmetry. Of course, not only four but also fewer substrate support units 130a, 130b, 130c, and 130d may be installed.

The substrate mover 140 moves the substrate between the substrate support and the substrate support in the chamber 100 when a plurality of substrate supports 130a, 130b, 130c, and 130d are installed in the chamber 100. The substrate moving part 140 includes a rotation shaft 142 inserted into a through hole penetrating the bottom of the main body 101 and disposed in the vertical direction, and a turntable 144 disposed in a horizontal direction on the upper portion of the rotation shaft 142. do. In this case, the rotation shaft 142 is disposed at the center of the plurality of support shafts 132 constituting the plurality of substrate support units 130, and driving means such as an external motor is connected to rotate, raise and lower the turntable 144. . Between the rotating shaft 142 and the through hole is sealed by using a bellows (not shown) to prevent the vacuum in the chamber 100 is released in the process of processing the substrate. The turntable 144 has a plate shape having a predetermined thickness and has openings 143a, 143b, 143c, and 143d into which the substrate support 134 is inserted. For example, if the substrate support 134 is a disc, the opening may be formed in a circular shape, as shown in Figure 1 may be opened to one side. In this case, the corners of the square turntable 144 are chamfered to reduce the radius of rotation of the turntable 144, thereby reducing the size of the chamber. Of course, the shape of the opening is not limited to this and can be changed into various shapes.

The turntable 144 may include a conductor material. That is, the whole turntable 144 may be made of a conductor, a part of which may be made of a conductor, or a conductor layer may be formed by coating the surface of the turntable 144. For example, the turntable 144 may be made of metal such as aluminum. In addition, the turntable 144 may serve as an auxiliary ground electrode on the outside of the substrate support 134, and may move in the vertical direction to move between the substrate support 134 and the gas sprayer 110 according to the position of the vertical support. May affect the plasma formed in the.

The turntable 144 may include a protrusion 146 protruding inward to support the substrate support ring 150 described above. The projection 146 protrudes in an inward direction of the turntable 144, more precisely inward from the inner wall of the opening 143. The protrusion 146 is installed at a plurality of positions to selectively support the substrate support ring 150. For example, as shown in FIG. 4, it may protrude toward the center of the opening 143 at three positions of the opening 143. The turntable 144 may be modified in various structures in addition to the protrusion 146 to support the substrate support ring 150. For example, if the protrusion 146 is discontinuously formed at the edge of the opening 143, the protrusion 146 may be a step formed continuously along the edge of the opening 143. In this case, the step may be formed with a step lower than the upper surface of the turntable 144, and by forming the inner diameter of the opening 143 formed by the step smaller than the outer diameter of the substrate support ring 150, the substrate support ring ( 150 may be supported.

When the plurality of substrate support units 130 are installed in the chamber 100, the turntable 144 may be made of one plate positioned outside the substrate support units 134. For example, as shown in FIG. 1, when four substrate supports 134 are disposed inside the chamber 100, the turntable 144 is made of one plate having four openings 143, and thus the opening ( The substrate support 134 may be disposed inside the 143.

The substrate support ring 150 is selectively supported by the substrate support 134 and the turntable 144, and is used to transfer the substrate W in the chamber 100. That is, the substrate support ring 150 is mounted on the stepped end of the substrate support 134 on the substrate support 134, and is mounted on the protrusion 146 or the stepped protruding inward on the turntable 144. The substrate support ring 150 supports an edge of the bottom surface of the substrate at a lower portion of the substrate, and may be formed in a shape corresponding to the outer shape of the substrate W supported by the substrate support ring 150. For example, if the substrate W is a disk-shaped wafer, the substrate support ring 150 may have a circular ring shape having a predetermined width. At this time, the width of the substrate support ring 150 is such that the edge of the substrate (W) can be stably supported. In addition, the thickness of the substrate support ring 150 may be equal to or smaller than the thickness of the step of the substrate support 134. The substrate support ring 150 may be provided with a mounting groove in which the substrate is mounted. When the substrate support ring 150 and the substrate W supported thereon are positioned on the substrate support 134, the substrate W may be supported while stably contacting the upper surface of the substrate support 134. .

When the substrate support ring 150 heats the substrate by a heating element provided in the substrate support 134 during substrate processing, temperature deviation occurs in an edge region of the substrate W supported by the substrate support ring 150. In order to suppress this, it is preferable to be formed of a material similar to the substrate support 134.

The turntable 144 and the substrate support ring 150 described above are used to transfer the substrate W between the plurality of substrate supports 134 or to move the substrate up and down in the chamber. That is, the turntable 144 rotates while supporting the substrate by the substrate support ring 150 to move the position of the substrate. Referring to FIG. 2, a case where the substrate mounted on the substrate support 134 in the B position is moved to the substrate support 134 in the C position will be described as follows. When the support shaft 132 of the substrate support 130 is lowered, the substrate is supported by the turntable 144 while being seated at the edge of the substrate support ring 150. Subsequently, when the turntable 144 is rotated about 90 ° clockwise, the substrate positioned at the substrate support 134 at the B position moves to the C position, and when the support shaft 132 of the substrate support 130 is raised, the turntable The substrate supported by 144 is seated on the substrate support 134 at the C position. The turntable 144 may move the substrate in this manner to seat the substrate loaded into the chamber through the substrate transfer robot on the substrate support or to unload the processed substrate. In addition, the substrate may be sequentially moved to each processing region for substrate processing.

The gas sprayer 110 is disposed to face the substrate support 134 in the chamber 100 and is spaced apart from each other, and injects a process gas for processing the substrate to the substrate support 134. In addition, the gas injection body 110 may be connected to an external power source (not shown) and used as an upper electrode for plasma generation. For example, RF (Radio Frequency) power is applied to the gas injector 110 and the substrate support 134 is grounded to excite the plasma by using RF in a reaction space which is a deposition space in the chamber 100. In this case, the substrate support 134 may be grounded through an internal ground electrode. In this case, the RF power is applied to the gas injector to form a plasma in the substrate processing space. However, the gas injector may excite the process gas and spray the gas into the substrate processing space. Of course, it can be injected into the substrate processing space.

The controller (not shown) controls the driving of the support shaft 132, the rotation shaft 142, the gas injection body 110, and a power source. In particular, the controller may independently drive the support shaft 132 and the rotating body to independently adjust the height of the substrate support 134 and the turntable 144 to smoothly move the substrate in the chamber 100.

In the above, the case where a plurality of substrate support parts are provided in the chamber has been described, but one substrate support part may be provided in the chamber. In this case, since there is no need to move the substrate between the substrate support within the chamber, the configuration of the substrate moving part may be excluded, and the rest of the configuration is the same.

Below, the modification of the substrate processing apparatus is demonstrated.

6 to 8 are cross-sectional views schematically showing the configuration of a substrate processing apparatus according to a modification of the present invention.

Referring to FIG. 6, a step may be formed in the extension portion 102 ′ of the top lid 102. The step is supplied to the substrate processing space formed by the extension portion 102 'and the substrate support 134 by digging the lower side than the upper side of the extension portion 102' by 'Z' in the outward direction of the chamber 100. It is possible to increase the exhaust path of the process gas. That is, the extension 102 ′ of the top lead 102 may be formed thicker than the thickness of the main body 101 of the chamber 100, in which case the exhaust path of the process gas injected from the gas injector 110 is sufficient. Part of the extension portion 102 ', specifically the lower portion, is formed in the form of a hollow to the outside of the substrate processing space, so that the exhaust formed between the substrate support 134 and the extension portion 102' toward the lower portion. By increasing the width (horizontal length) of the path, the exhaust efficiency can be improved. Referring to FIG. 7, a curved surface may be formed on the extension 102 ′ of the top lid 102. As shown in FIG. 4, when a step is formed in the extension portion 102 ′ of the top lid 102, an attachment is formed in an area where the step is formed, and in the case of forming a plasma in the substrate processing area. There is a problem that the plasma is concentrated on the attachment, so that the plasma may not be uniformly formed over the entire substrate processing region, and the top lid 102 may be damaged. By forming the curved surface T in the extension portion 102 ', plasma can be uniformly formed in the substrate processing space and damage to the top lid 102 caused by the plasma can be suppressed.

Referring to FIG. 8, a curtain gas injection unit 200 for injecting curtain gas may be formed in the extension 102 ′ of the top lid 102. The curtain gas injector 200 may be formed to inject the curtain gas along the edge of the substrate support 134 to the extension 102 ′ of the top lid 102. In addition, the curtain gas sprayer 200 may be formed to spray the curtain gas over an area other than the substrate support 134. The curtain gas injector 200 forms a gas diffusion space 210 through which the curtain gas is introduced into the extension 102 ′ of the top lid 102, and a gas diffusion space () below the extension 102 ′. Covering the 210 and may be formed by combining the injection plate 230, a plurality of injection holes are formed. The gas diffusion space 210 may be connected to an external curtain gas supply source through an introduction pipe 201 penetrating through the top lid 102. In this case, the gas diffusion space 210 may be formed in various shapes according to the curtain gas injection region as described above, for example, may be formed in a ring shape to spray the curtain gas along the edge of the substrate support 134. In addition, the gas diffusion space is divided into a plurality of layers 210a and 210b through a diffusion plate 220 in which a plurality of injection holes are formed in the gas diffusion space 210, and the curtain gas introduced from the outside is discharged in each layer. After the diffusion, it may be injected into the chamber 100 through the injection plate 230. The curtain gas injection unit 200 may be formed to inject the gas in the vertical direction, it may be formed to be tilted. In the latter case, since the insulator 120 is interposed between the top lid 102 and the gas sprayer 110, the position of the curtain gas injector 200 is formed to be spaced apart from the gas sprayer 110, thereby providing curtain gas. This is because it may be difficult to spray along the edge of the substrate support 134. Therefore, by forming the curtain gas injector 200 by tilting, the curtain gas may be ejected along the edge of the substrate support 134 to more accurately separate the substrate processing spaces.

As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

100: chamber 101: main body
102: top lead 102 ': extension part
110: gas injector 130: substrate support
140: substrate moving part 150: substrate support ring

Claims (11)

A main body having an upper part opened and an inner space formed therein and an exhaust port formed at a lower part thereof;
A top lead provided at an upper portion of the main body to cover at least a portion of the upper upper portion of the main body;
A substrate support provided inside the main body to support a substrate;
A gas injection body mounted to the top lead to face the substrate support to inject a process gas into the substrate support;
The top lead includes an extension part extending upward and downward to form a space in which the substrate is processed, and an exhaust path of the process gas between an edge of the substrate support and an inner wall of the extension in the space where the substrate is processed. Is formed,
The substrate support is movable, and forms a space in which the substrate is processed in the extension portion along with the top lead through the rising,
The substrate supported by the substrate support is inserted into the space where the substrate is processed through the substrate support is processed,
The top lead is provided with a plurality of spaces in which the substrate is processed through the extension part extending in the vertical direction,
The gas injector and the substrate support are provided in a number corresponding to the number of spaces in which the substrate is processed ,
The plurality of substrate supports may be configured such that at least a portion of the substrate supports can be inserted into the extension portion of the space where the corresponding substrate is processed without interference with the extension portion. The substrate processing apparatus characterized by being smaller than the area on a plane. The method according to claim 1,
And a substrate moving part configured to move a substrate between the plurality of substrate supports in the main body. The method according to claim 2,
The substrate moving part
Rotating shaft is disposed in the vertical direction in the main body to rotate, ascend and descend,
A turntable connected in a horizontal direction to an upper portion of the rotating shaft and having a plurality of openings through which the plurality of substrate supports pass through;
A plurality of substrate support rings provided at an upper portion of the turntable corresponding to the openings to support edges of the substrate;
The opening is provided with a protrusion inside the opening to support the substrate support ring,
And the substrate support ring is selectively supported by the substrate support and the turntable. The method according to claim 3,
The top lid substrate processing apparatus is provided with a curtain gas injection unit for injecting the curtain gas. The method according to claim 4,
The curtain gas injection unit,
A curtain gas diffusion space communicating with an external curtain gas supply source in the top lid;
And a spray plate coupled to the curtain gas diffusion space at a lower portion of the top lead and having a plurality of spray holes formed therein. The method according to claim 5,
And a diffusion plate in which the curtain gas diffusion space is divided into a plurality of layers and a plurality of injection holes are formed in the curtain gas diffusion space. The method according to any one of claims 1 to 6,
The top lead is formed with an insertion hole penetrating the top lead in the vertical direction,
The step of the substrate processing apparatus is formed on the inner edge of the insertion hole for supporting the gas injection body inserted through the insertion hole. The method according to claim 7,
And an insulator disposed between the top lead and the gas injector. The method according to claim 7,
The inner peripheral surface of the extension portion is formed of one continuous surface. The method according to claim 7,
At least a portion of the extension portion is excavated out of the space where the substrate is processed so that the width of the exhaust path increases toward the bottom. The method according to claim 7,
And a curved surface formed on at least a portion of the extension portion.

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