KR102329169B1 - Apparatus for Deposition of Thin Film - Google Patents

Abstract

A thin film deposition apparatus according to an embodiment of the present technology includes: a chamber including a chamber body providing a processing space for depositing a material film on a plurality of substrates, and a chamber lid coupled to the chamber body at an upper portion of the chamber body; a substrate support unit installed in the chamber to rotate and support the plurality of substrates; A plurality of gas supply units installed to face the substrate support using the chamber lid as a support member and disposed along a circumferential direction of a trajectory in which the substrate support rotates in order to inject a plurality of process gases onto the substrate support. wherein at least one of the plurality of gas supply units includes an injection area in which a plurality of injection holes disposed in a radial direction from the center of the gas injection unit are formed, and both sides in a circumferential direction with respect to the injection area. and a non-eject region in which an ejection hole is not formed, and at least one region of the non-eject region includes a drain for discharging the gas injected through the gas supply unit to the outside of the gas supply unit, the drain The portion may be formed of a plurality of trenches to exhaust the gas injected from the gas supply unit in which the drain portion is formed and the gas injected from the gas supply unit disposed adjacent to the drain portion.

Description

Thin film deposition apparatus {Apparatus for Deposition of Thin Film}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly, to an apparatus for depositing a thin film.

A thin film for manufacturing a semiconductor device may be formed through a method such as deposition, growth, or the like.

The thin film deposition method may be classified into a chemical vapor deposition (CVD) method, a plasma CVD method developed therefrom, a direct plasma method, a remote plasma method, an atomic layer deposition (ALD) method, and the like.

The atomic layer deposition method of forming a thin film is performed by one cycle of supplying a source gas, supplying a purge gas, supplying a reaction gas, and supplying a purge gas, and has the advantage of uniformly depositing a thin film on a substrate. However, since the process time per cycle is long, the thin film deposition rate is low.

In order to solve the speed problem, a plurality of substrate processing apparatuses for processing a plurality of substrates at once in a chamber have been developed. The multiple substrate processing apparatus is an apparatus for supplying source/purge/reactant gases from a gas supply device installed on a surface opposite to a deposition surface of the substrate while seating and rotating a plurality of substrates on a rotatable substrate support in a chamber. When a plurality of substrate processing apparatus is used, a thin film can be simultaneously deposited on a plurality of substrates, so that the overall process time can be shortened.

A thin film having excellent step coverage characteristics can be deposited using the atomic layer deposition method, and film properties such as stress, surface uniformity, surface roughness, density, etc. of the deposited thin film, film thickness, etc., are dependent on the yield and have a significant impact on reliability.

On the other hand, in Korean Patent Application Laid-Open No. 10-2013-0071888, filed on December 21, 2011 and published on July 01, 2013 by the present applicant, as a gas injection device for injecting gas toward the substrate support, the substrate an injection surface facing the support, and an injection hole formed on the injection surface to inject gas, the injection surface has a plurality of gas injection regions for injecting different gases, at least one of the gas injection regions Disclosed are a gas ejection apparatus and a substrate processing apparatus in which a flow path groove is formed.

In the above publication, a flow path groove is formed in at least one gas injection region in order to prevent the dissimilar gases injected to the substrate from mixing in the atomic layer deposition process. In particular, a flow path groove is formed at the boundary between the two gas injection regions. , so that the gas injected at the boundary between the gas injection areas flows to the outside of the showerhead along the flow path groove.

However, since the flow path groove of the Laid-Open Patent Publication is composed of a single stepped groove, different gases each injected from the two adjacent gas injection regions cannot but mix in the vicinity of the flow path groove, and thus the properties of the deposited thin film is difficult to guarantee completely.

An embodiment of the present technology may provide a thin film deposition apparatus capable of stably supplying a process gas.

A thin film deposition apparatus according to an embodiment of the present technology includes: a chamber including a chamber body providing a processing space for depositing a material film on a plurality of substrates, and a chamber lid coupled to the chamber body at an upper portion of the chamber body; a substrate support unit installed in the chamber to rotate and support the plurality of substrates; A plurality of gas supply units installed to face the substrate support using the chamber lid as a support member and disposed along a circumferential direction of a trajectory in which the substrate support rotates in order to inject a plurality of process gases onto the substrate support. wherein at least one of the plurality of gas supply units includes an injection area in which a plurality of injection holes disposed in a radial direction from the center of the gas injection unit are formed, and both sides in a circumferential direction with respect to the injection area. and a non-eject region in which an ejection hole is not formed, and at least one region of the non-eject region includes a drain for discharging the gas injected through the gas supply unit to the outside of the gas supply unit, the drain The portion may be formed of a plurality of trenches to exhaust the gas injected from the gas supply unit in which the drain portion is formed and the gas injected from the gas supply unit disposed adjacent to the drain portion.

According to the present technology, the source gas and the purge gas, the purge gas and the reaction gas may be supplied to the upper surface of the substrate without mixing with each other.

Accordingly, it is possible to improve not only electrical properties of the deposited thin film, but also physical properties such as deposition rate and deposition uniformity.

1 is a block diagram of a thin film deposition apparatus according to an exemplary embodiment.
2 is a plan view of a gas supply apparatus according to an embodiment.
3 is a perspective view of a gas supply device according to an embodiment.
4A and 4B are cross-sectional views of a drain unit according to example embodiments.

Hereinafter, embodiments of the present technology will be described in more detail with reference to the accompanying drawings.

As shown in FIG. 1 , the thin film deposition apparatus 100 may include a chamber 110 , a substrate support unit 120 , and a gas supply apparatus 130 . The gas supply device 130 may also be referred to as a gas injection unit, and in the following description, the gas supply device and the gas injection unit will be used as terms referring to the same component.

The chamber 110 may include a lower plate 111 , a side plate 112 , and an upper plate 113 that is substantially a gas supply device 130 . The lower plate 111 may have a disk shape, and the side plate 112 vertically extends upward from the edge of the lower plate 111 . In addition, a gate G through which the substrate W is drawn in and out may be formed on the side plate 112 . An upper plate 113 coupled to the side plate 112 is installed on the upper surface of the side plate 112 , and the gas supply device 130 may be provided using the upper plate 113 as a support member. As the upper plate 113 provided with the gas supply device 130 is hermetically coupled to the upper surface of the side plate 112 , a deposition space is formed in the chamber 110 . Here, the lower plate 111 and the side plate 112 act as a chamber body, and the upper plate 113 acts as a chamber lid.

A thin film deposition space 160 is formed between the substrate support 120 and the gas supply device 130 inside the chamber 110 . Accordingly, the thin film is deposited on the plurality of substrates W by supplying the gas to the thin film deposition space 160 .

The substrate support unit 120 is installed to face the gas supply device 130 in the chamber 110 , and may include a susceptor 121 , a substrate seating unit 122 , and a shaft 123 .

The susceptor 121 has a disk shape and is rotatably disposed inside the chamber 110 . A plurality of substrate seating units 122 are installed along the periphery of the upper portion of the susceptor 121 . The shaft 123 that makes the susceptor 121 rotatable passes through the chamber 110 and is connected to a rotation motor (not shown) to rotate the susceptor 121 about the rotation axis A. In addition, the shaft 123 is connected to a lifting motor (not shown) to raise or lower the substrate support 120 .

The gas supply device 130 is installed to be spaced apart from each other by a specified distance on the upper side of the substrate support unit 120 . In addition, the plurality of gas supply units 150 and 155 may be provided to spray the processing gas provided through the gas supply line to the thin film deposition space 160 .

2 and 3 are views for explaining the structure of a gas supply device according to an embodiment, FIG. 2 is a plan view taken along portions A1-A2 of FIG. 1, and FIG. 3 is a perspective view.

Referring to FIGS. 2 and 3 , the gas supply device 130 includes a plurality of process gas supply units 310 , 320 , 330 , and 340 installed radially from the center in the disk-shaped support member 301 , and a support member. The curtain gas supply unit 350 installed in the central part of the 301, and the drain part 360 installed at both edges of any one of the two neighboring process gas supply units 310, 320, 330, 340, 370, 380, 390). The plurality of process gas supply units 310 , 320 , 330 , and 340 may be sequentially arranged in a circumferential direction.

The process gas supply units 310 , 320 , 330 , and 340 and the curtain gas supply unit 350 may each have a plurality of holes H for injecting a predetermined type of gas as gas injection ports. However, it is obvious that the hole H is not shown in FIG. 3 and that the gas supply device 130 of FIG. 3 also has a hole for injecting each process gas.

Accordingly, each of the process gas supply units 310 , 320 , 330 , and 340 may be divided into an injection region in which the process gas is injected through the injection hole and a non-injection region in which the process gas is not injected. In addition, the drain parts 360 , 370 , 380 , and 390 may be provided in the non-emission area of any one of the two adjacent process gas supply units 310 , 320 , 330 , and 340 .

In an embodiment, each of the drain units 360 , 370 , 380 , and 390 includes a plurality of trenches 361/363 , 371/373 , 381/382 , and 391 extending in a radial direction from the center of the gas supply device 130 . /393) may be included. In one embodiment, partition walls 365, 375, and ribs 365, 375; 385, 395) may be formed.

In one embodiment, each of the plurality of trenches 361/363, 371/373, 381/382, and 391/393 is formed extending in a radial direction from the center of the chamber lid, which is the support member 301, in the trench 361/363. , 371/373, 381/382, 391/393) The height of the bottom of the groove is formed so that the height of the groove bottom is gradually increased or the height is gradually decreased with respect to the support member 301 as it goes outward from the center of the support member 301 . can be

The process gas supply unit includes a source gas supply unit 310 , a first purge gas supply unit 320 installed adjacent to one side of the source gas supply unit 310 along the circumferential direction, and a first purge gas supply unit along the circumferential direction. A second purge gas supply unit ( 320 ) installed adjacent to one side of the reactive gas supply unit 330 and one side of the reactive gas supply unit 330 along the circumferential direction and the other side of the source gas supply unit 310 ( 340) may be included.

The source gas supply unit 310 may supply a source gas of a thin film to be deposited on the substrate, and the reaction gas supply unit 330 may inject a reaction gas reacting with the source gas.

The first and second purge gas supply units 320 and 340 may supply a gas, for example, an inert gas, for purging the source gas and the reaction gas, respectively.

On the other hand, the curtain gas supply unit 350 is provided in the central region of the gas supply device 130 to supply the curtain gas, so that the gases injected from each gas supply unit 310 , 320 , 330 , and 340 are mixed. prevent. As the curtain gas, for example, the same gas as the purge gas may be used, but is not limited thereto.

The drain part includes a first drain part 360 provided in a non-eject region of one edge of the source gas supply unit 310, a second drain part 370 provided in a non-eject region of one edge of the reactive gas supply unit 330, The reaction gas supply unit 330 may include a third drain unit 380 provided in a non-ejection area of the other edge and a fourth drain unit 390 provided in a non-ejection area of the other edge of the source gas supply unit 310 . can

The first to fourth drain portions 360. 370 , 380 , and 390 may include first trenches 361 , 371 , 381 , and 391 and second trenches 363 , 373 , 383 , and 393 , respectively. The first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 may be divided by partition walls 365 , 375 , 385 , and 395 .

That is, the gas supply device 130 according to the present technology has a drain unit 360 at both edges of any one of the adjacent pair of gas supply units 310/320, 320/330, 330/340, and 340/310. , 370, 380, 390) may be provided.

Each of the drain parts 360 , 370 , 380 , and 390 is a chamber in which the process gas supplied from the gas supply unit adjacent to one side of the drain part 360 , 370 , 380 , 390 flows to the outside of the gas supply device 130 . (100) Gas supplied from a gas supply unit adjacent to the other side of the first trenches 361 , 371 , 381 , 391 and the drain parts 360 , 370 , 380 and 390 to be discharged to the outside of the chamber 100 is outside the chamber 100 . and second trenches 363 , 373 , 383 , and 393 to be discharged into the ? The first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 are separated by partition walls 365 , 375 , 385 , and 395 , so that gas supplied from two neighboring gas supply units is provided. mixing can be further prevented.

The first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 may extend radially from the central portion of the support member 301 .

The heights of the first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 are based on the substrate seating part 122 on which the processing target substrate W is mounted. Gas supply As it extends from the center of the device 130 to the outer periphery, it may have a groove shape that gradually increases or decreases. In other words, the groove portions of the first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 are inclined to increase or decrease from the central portion of the gas supply device 130 toward the outer periphery. can have

Meanwhile, the height of the partition walls 365 , 375 , 385 , and 395 may be higher or lower than the gas supply surface of each gas supply unit 310 , 320 , 330 , 340 .

Widths W1 and W1 of the first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 in the circumferential direction of the gas supply device 130 may be the same or different.

In one embodiment, the circumferential width W1 of the trench formed in contact with each gas injection region of the source gas supply unit 310 or the reaction gas supply unit 330 is in contact with the purge gas supply units 320 and 340 . It may be wider than the circumferential width W2 of the formed trench.

The inner walls of the first trenches 361 , 371 , 381 , and 391 and the second trenches 363 , 373 , 383 , and 393 may have a shape through which the process gas can be more efficiently discharged.

4A and 4D are cross-sectional views of a drain unit according to embodiments, and are cross-sectional views taken along line B-B' of FIG. 3 .

4A to 4D , a first drain unit 360 is installed in a non-eject area of one edge of the source gas supply unit 310 , for example, an edge adjacent to the first purge gas supply unit 320 . can

The first drain unit 360 includes a first trench 361 adjacent to the source gas injection region side of the source gas supply unit 310 and a second trench adjacent to the purge gas injection region side of the first purge gas supply unit 320 . 363 and a partition wall 365 dividing the first trench 361 and the second trench 363 may be included.

The gas supply surfaces 312 and 322 of the process gas supply units 310 and 320 and the grooves 3611 and 3631 of the first and second trenches 361 and 363 may have different heights. More specifically, the plane formed by the grooves of the first and second trenches is higher than the plane formed by the gas supply surface of the neighboring process gas supply unit based on the substrate seating surface of the substrate seating part 122, , the first and second trenches 361 and 363 may have a groove shape extending in a radial direction from the central portion of the support member 301 .

As described above, the groove portions of the first and second trenches may be installed in an inclined shape from the central portion of the support member 301 toward the outer periphery. In addition, the angle of the inclination provided in the groove portions of the first and second trenches may have a shape inclined toward the substrate support device 140 with the support member 301 as a reference plane, but is not limited thereto.

The inner sidewalls of the first and second trenches 361 and 363 may be implemented in various shapes, such as a straight line as shown in FIG. 4A or a shape including a slope as shown in FIGS. 4B to 4D, and the process It can be selected from the shapes in which the gas discharge efficiency becomes excellent.

The first and second trenches 361 and 363 may have the same or different circumferential widths.

A drain unit 360 having a pair of trenches on at least one side of both edges of at least one gas supply unit 310, 320, 330, 340 of the neighboring gas supply units 310, 320, 330, 340; As 370 , 380 , and 390 are installed, gases supplied from adjacent gas supply units are not mixed on the upper substrate but are provided through trenches provided in the drain parts 360 , 370 , 380 , and 390 outside the gas supply device 130 . can be discharged smoothly.

As such, those skilled in the art to which the present invention pertains will understand that the present invention may be embodied in other specific forms without changing the technical spirit or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the following claims rather than the above detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention. do.

10: thin film deposition device
130: gas supply device
310, 320, 330, 340: process gas supply unit
350: curtain gas supply unit
360, 370, 380, 390: drain part

Claims (10)

a chamber including a chamber body providing a processing space for depositing a material film on a plurality of substrates, and a chamber lid coupled to the chamber body at an upper portion of the chamber body;
a substrate support unit installed inside the chamber to rotate and support the plurality of substrates;
A plurality of gas supply units installed to face the substrate support using the chamber lid as a support member and disposed along a circumferential direction of a trajectory in which the substrate support rotates in order to inject a plurality of process gases onto the substrate support. It includes a gas injection unit that
At least one of the plurality of gas supply units includes an injection area having a plurality of injection holes disposed in a radial direction from the center of the gas injection unit, and injection holes disposed on both sides in a circumferential direction with respect to the injection area. including a non-ejection area that has not been
At least one of the non-ejection regions includes a drain for discharging the gas injected through the gas supply unit to the outside of the gas supply unit,
The drain part is formed of a plurality of trenches to exhaust the gas injected from the gas supply unit in which the drain part is formed and the gas injected from the gas supply unit disposed adjacent to the drain part,
The plurality of trenches may extend in a radial direction from the center of the chamber lid to be adjacent to each other, and further include barrier ribs formed between the plurality of adjacent trenches. delete The method of claim 1,
Any one of the grooves formed in each of the plurality of trenches is formed to have an inclination toward the outside from the center of the gas injection unit. The method of claim 1,
A thin film deposition apparatus in which widths in the circumferential direction of each of the trenches formed in the drain portion are different from each other. The method of claim 1,
The gas injection unit is provided in the central region of the chamber lid and is configured to further include a curtain gas supply unit configured to inject a curtain gas for isolating the gas injected from the gas supply unit. 2. The method of claim 1
and the plurality of gas supply units include a source gas supply unit, a first purge gas supply unit, a reactive gas supply unit, and a second purge gas supply unit that are sequentially disposed along a circumferential direction of the chamber lid. 7. The method of claim 6,
The drain part includes a first drain part installed in a non-ejection area of one side of the source gas supply unit,
The first drain unit includes a first trench for discharging the source gas supplied from the source gas supply unit;
The thin film deposition apparatus is provided between the first trench and a purge gas supply unit adjacent to the first trench and includes a second trench for discharging the purge gas supplied from the purge gas supply unit. 7. The method of claim 6,
The drain part includes a second drain part installed in the non-ejection area of one side of the reactive gas supply unit,
The second drain portion includes a first trench for discharging the reaction gas supplied from the reaction gas supply unit;
The thin film deposition apparatus is provided between the first trench and a purge gas supply unit adjacent to the first trench and includes a second trench for discharging the purge gas supplied from the purge gas supply unit. delete delete

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