KR102446229B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for forming a thin film on a substrate.
The present invention includes a process chamber 100 for forming a closed processing space (S) for substrate processing; A substrate support unit 200 including a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted and a shaft unit 230 supporting the substrate mounting plate 210 on its upper surface. Wow; a driving unit which rotates the substrate support unit 200 with respect to a central axis (C) and vertically drives; a gas injection unit 300 facing the substrate supporting unit 200 and installed on the upper side of the process chamber 100 to inject a process gas to the substrate 10 seated on the substrate supporting unit 200; an exhaust unit 500 installed along the outer periphery of the substrate support unit 200 and exhausting the gas injected from the gas injection unit 300 to the outside through the lower portion of the process chamber 100; a heater unit 700 installed under the process chamber 100 to heat the substrate 10 seated on the substrate mounting plate 210; An inert gas supply unit 220 that is provided on the substrate seating plate 210 and supplies an inert gas to prevent the process gas from penetrating into the space between the lower surface of the substrate seating plate 210 and the upper surface of the heater unit 700. Disclosed is a substrate processing apparatus comprising a.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for forming a thin film on a substrate.

As a method of forming a thin film on a substrate to manufacture a semiconductor device, there are chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD). have.

Among them, since the atomic layer deposition method is a method of forming a thin film by supplying gas on a substrate, a gas injection unit for injecting a source gas, a purge gas, and a reaction gas onto the substrate in the chamber and an exhaust unit for exhausting the internal gas do.

1 is a view showing an example of a conventional substrate processing apparatus for processing a substrate using an atomic layer deposition method.

In the conventional substrate processing apparatus, as shown in FIG. 1 , a process chamber 100 forming a closed processing space, and a substrate support unit 200 installed below the process chamber 100 to support a substrate 10 . ), a gas injection unit 300 installed on the upper side of the process chamber 100 and injecting gas for substrate processing into the process chamber 100 , and installed in the process chamber 100 to release the gas in the processing space to the outside and an exhaust unit 500 for exhausting the air.

The gas injection unit 300 is formed in a shape corresponding to the substrate support unit 200 supporting the plurality of substrates 10 , is installed above the substrate support unit 200 , and is seated on the upper surface of the substrate support unit 200 . (10) to inject gas towards them.

The substrate support unit 200, a plurality of substrates 10 are seated on a plurality of substrate seating units 202 arranged at equal intervals in the circumferential direction with the substrate support unit 300 as the center, and a gas injection unit ( 200) relative to each other.

In such a substrate processing apparatus, a substrate treatment such as thin film deposition is performed on the substrate 10 by the process gas injected from the gas injection unit, and the remaining process gas after the substrate treatment is exhausted by the exhaust unit 500 . However, some of the process gas is not exhausted by the exhaust unit 500 but flows into the lower side of the substrate support unit 200 , so that the lower surface of the substrate support unit 200 or the inside of the process chamber 100 may be contaminated by the process gas. .

When the lower surface of the substrate support unit 200 is contaminated by the process gas, particles are peeled off to contaminate the substrate, or it is difficult to uniformly heat the substrate due to the contaminated portion of the substrate support unit 200. and density) is lowered.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus capable of effectively preventing the lower surface of a substrate support from being contaminated by a process gas by recognizing the above problems.

The present invention was created to achieve the object of the present invention as described above, and the process chamber 100 for forming a closed processing space (S) for substrate processing; A substrate support unit 200 including a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted and a shaft unit 230 supporting the substrate mounting plate 210 on its upper surface. Wow; a driving unit which rotates the substrate support unit 200 with respect to a central axis (C) and vertically drives; a gas injection unit 300 facing the substrate supporting unit 200 and installed on the upper side of the process chamber 100 to inject a process gas to the substrate 10 seated on the substrate supporting unit 200; an exhaust unit 500 installed along the outer periphery of the substrate support unit 200 and exhausting the gas injected from the gas injection unit 300 to the outside through the lower portion of the process chamber 100; a heater unit 700 installed under the process chamber 100 to heat the substrate 10 seated on the substrate mounting plate 210; An inert gas supply unit 220 that is provided on the substrate seating plate 210 and supplies an inert gas to prevent the process gas from penetrating into the space between the lower surface of the substrate seating plate 210 and the upper surface of the heater unit 700. Disclosed is a substrate processing apparatus comprising a.

The inert gas supply unit 220 communicates with an external gas supply device and communicates with a first gas supply passage 231 formed inside the shaft portion 230 and the first gas supply passage 231, and the An inert gas flow path 201 formed inside the substrate seating plate 210, and a plurality of gas injection holes communicating with the inert gas flow path 201 and formed in at least one of a lower surface and a side surface of the substrate seating plate 210 may include

The inert gas supply unit 220 communicates with an external gas supply device and is detachably attached to a first gas supply passage 231 formed inside the shaft unit 230 and the lower surface of the substrate seating plate 210 . It may include a plurality of gas injection members 400 that are coupled and have an inert gas flow passage 201 communicating with the first gas supply passage 231 therein.

The gas injection member 400 is at a position corresponding to at least one of a lower surface and a side surface of the substrate seating plate 210 when combined with the substrate seating plate 210. At least one communicating with the inert gas flow path 201 A gas injection hole may be formed.

The inert gas supply unit 220 communicates with an external gas supply device and is detachably attached to a first gas supply passage 231 formed inside the shaft unit 230 and the lower surface of the substrate seating plate 210 . It may include a plurality of gas injection members 400 that are coupled to form an inert gas flow passage 201 communicating with the first gas supply passage 231 together with the lower surface of the substrate seating plate 210 .

The gas injection member 400 is at a position corresponding to at least one of a lower surface and a side surface of the substrate seating plate 210 when combined with the substrate seating plate 210. At least one communicating with the inert gas flow path 201 A gas injection hole may be formed.

The substrate seating plate 210 may include a second gas supply passage 204 for communicating the first gas supply passage 231 and the inert gas passage 201 therein.

The inert gas flow path 201 may be formed in a region that does not vertically overlap with the substrate seating part 202 .

The substrate seating plate 210 may include a plurality of substrate seating portions 202 on the upper surface of which a plurality of substrates 10 are mounted along a circumferential direction with the center of the substrate seating plate 210 as a center.

The plurality of gas injection members 400 are located in a region of the lower surface of the substrate seating plate 210 that does not overlap vertically with the substrate seating part 202 in a circumferential direction around the center of the substrate seating plate 210 . can be placed along.

A plurality of coupling grooves 211 extending radially from the center to the edge and respectively coupled to the gas injection member 400 may be formed on the lower surface of the substrate seating plate 210 .

The inert gas supply unit 220 may include a plurality of first gas injection holes 224 formed at positions corresponding to the lower surface of the substrate seating plate 210 of the gas injection member 400 .

The substrate seating plate 210 may have a circular planar shape.

The plurality of first gas injection holes 224 may be arranged in one or more rows in a radial direction from a central portion to an outer portion of the substrate seating plate 210 .

The inert gas supply unit 220 may include a plurality of second gas injection holes 226 formed at positions corresponding to the side surfaces of the substrate seating plate 210 among the gas injection members 400 .

The first gas injection hole 224 may inject an inert gas directly downward from the lower surface of the substrate seating plate 210 .

The first gas injection hole 224 may be inclined with respect to a normal to the lower surface of the substrate seating plate 210 to inject an inert gas.

The first gas injection hole 224 may be inclined toward the outside of the substrate seating plate 210 with respect to a normal to the lower surface of the substrate seating plate 210 to spray the inert gas.

The first gas injection hole 224 may be inclined toward a direction opposite to the rotation direction of the substrate seating plate 210 with respect to a normal to the lower surface of the substrate seating plate 210 to spray the inert gas.

The second gas injection hole 226 may inject an inert gas in a direction parallel to a horizontal plane at a position corresponding to the side surface of the substrate seating plate 210 .

The second gas injection hole 226 is inclined upward so as to incline in the upper direction of the substrate seating plate 210 with respect to a reference plane parallel to a horizontal plane at a position corresponding to the side surface of the substrate seating plate 210 to release an inert gas. can be sprayed

The substrate processing apparatus according to the present invention includes an inert gas supply unit for supplying an inert gas to the substrate support part, so that the inert gas can be evenly spread on the lower surface of the substrate support part, effectively preventing the lower surface of the substrate support part from being contaminated by the process gas There are advantages to being able to

1 is a cross-sectional view showing a conventional substrate processing apparatus.
FIG. 2 is an XY plan view showing a part of the configuration of the substrate processing apparatus of FIG. 1 .
3A is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention, and FIG. 3B is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present invention.
4A is a plan view showing the upper surface of the substrate support part of the substrate processing apparatus according to the present invention, and FIG. 4B is a view showing the lower surface of the substrate support part of the substrate processing apparatus according to the present invention.
5A to 5B are perspective views illustrating a part of a configuration of a substrate support part of a substrate processing apparatus according to the present invention.
Fig. 6 is a sectional view in the II-II direction of Fig. 4A.
7 is a cross-sectional view illustrating a modification of FIG. 4A .

Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings.

A substrate processing apparatus according to the present invention, as shown in Figs. 1 to 7, a process chamber 100 for forming a closed processing space (S) for substrate processing; A substrate support unit 200 including a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted, and a shaft unit 230 supporting the substrate mounting plate 210, and ; a driving unit which rotates the substrate support unit 200 with respect to the central axis (C) and vertically drives; a gas injection unit 300 that faces the substrate support 200 and is installed on the upper side of the process chamber 100 and injects a process gas to the substrate 10 seated on the substrate support 200; It is installed along the outer periphery of the substrate support 200 and exhausts the gas injected from the gas injection unit 300 to the outside through the lower part of the process chamber 100, and is installed at the lower side of the process chamber 100 and a heater unit 700 for heating the substrate 10 seated on the substrate mounting plate 210 .

The process chamber 100 can be configured in a variety of configurations to form a closed processing space (S) for substrate processing.

The process chamber 100 may include a chamber body 110 having an open upper side, and an upper lid 120 coupled to the upper portion of the chamber body 110 to form a sealed processing space (S).

In addition, one or more gates (not shown) may be formed on one side of the process chamber 100 for substrate entry or substrate unloading.

The substrate support unit 200 may have various configurations in a configuration in which a plurality of substrates 10 are mounted on an upper surface.

The substrate support 200 may be made of various materials depending on the process environment, and may be formed, for example, by SiC coating on graphite.

For example, the substrate support unit 200 includes a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted, and a central portion (C) of the substrate mounting plate 210 . It may include a shaft portion 230 coupled to the substrate seating plate 210 supporting the.

The substrate seating plate 210 may include a plurality of substrate seating portions 202 disposed at equal intervals along the periphery around the central portion C of the substrate seating plate 210 may be formed on the upper surface, and have a planar shape. It may be a plate made of a circular shape, a square shape, or the like.

The shaft part 230 may be installed in the process chamber 100 by passing through the lower side of the process chamber 100 .

The driving unit is coupled to the shaft unit 230 and rotates the substrate support unit 200 around a vertical axis of rotation passing through the central portion (C) of the substrate seating plate 210, and various configurations are possible.

The gas ejection unit 300 is installed on the upper side of the process chamber 100 facing the substrate seating plate 210 , and has various configurations in the configuration of injecting the process gas to the substrate 10 seated on the substrate support unit 200 . This is possible.

For example, the gas injection unit 300 has a planar shape corresponding to the substrate support unit 200 in order to inject gas to the substrate 10 seated on the upper surface of the substrate support unit 200 . It may be installed on the upper lid 120 .

When the substrate processing apparatus is an atomic layer deposition apparatus, the gas injection unit 300 includes a source gas injection unit S that injects the source gas toward the substrate support unit 300, as shown in FIG. 2 , the source gas It may include a purge gas injection unit (R) for injecting a purge gas to prevent gas mixing between the reaction gas and a reaction gas injection unit (R) for injecting the reaction gas.

The source gas injection unit (S), the purge gas injection unit (P), the reaction gas injection unit (R), and the purge gas injection unit (P) are sequentially in the circumferential direction with respect to the center of the gas injection unit 300 . can be placed.

In addition, the gas injection unit 300 is a curtain gas for preventing the gases injected from the respective injection units S, R, and P to the central portion of the gas injection unit 300 from being mixed in the central portion of the substrate support unit 200 . It may further include a curtain gas spraying unit for spraying. The curtain gas may be the same gas as the purge gas.

The injection parts S, P, R, and P may be sequentially disposed along the circumferential direction of the substrate seating plate 210 .

Specifically, the gas injection unit 300 may be configured in the same manner as the gas injection device disclosed in Korean Patent Application Laid-Open No. 10-2014-0000447.

The exhaust unit 500 is installed along the outer periphery of the substrate support unit 200 and exhausts the gas injected from the gas injection unit 300 to the outside through the lower portion of the process chamber 100 , and various configurations are possible.

The exhaust unit 500 may be connected to an external vacuum pump 600 through an exhaust port 510 formed at a lower portion of the process chamber 100 .

The exhaust unit 500 is provided with a space between the side wall of the process chamber 100 and the substrate seating plate 210 to form an exhaust groove 502 for introducing gas in the processing space S and exhausting it to the outside. It may include a partition wall portion 520 formed along the outer circumference.

The barrier rib portion 520 is preferably formed to have a height equal to or lower than the height of the upper surface of the substrate seating plate 210 during substrate processing in order to facilitate gas exhaust.

In addition, the barrier rib part 520 may be installed to be spaced apart from the substrate seating plate 210 by a preset interval for vertical movement of the substrate support part 200 .

At this time, the exhaust part 500 is coupled to the partition wall part 520 and the process chamber 100 at the upper end of the partition wall part 520 and has one or more baffle holes ( It may include a ring-shaped baffle plate 530 having a 501 .

The gas around the baffle plate 530 is sucked into the baffle hole 501 by the vacuum pump 600 installed outside, and then moves along the exhaust groove 502 to communicate with the exhaust groove 502. The exhaust port 510 can be exhausted to the outside.

The heater unit 700 is installed under the process chamber 100 to heat the substrate 10 seated on the substrate mounting plate 210 , and various configurations are possible.

The heater unit 700 is installed on the lower side of the process chamber 100 to heat the substrate 10 to a process temperature, and generates heat to protect the heating member (not shown) and the heating member that generate heat when power is applied. A cover member for covering the member may be included.

A vertical space may be formed between the upper surface of the heater unit 700 and the lower surface of the substrate seating plate 210 .

In such a substrate processing apparatus, a substrate treatment such as thin film deposition is performed on the substrate 10 by the process gas injected from the gas injection unit 300 , and the remaining process gas after the substrate treatment is exhausted by the exhaust unit 500 . However, some of the process gas is not exhausted by the exhaust part 500 and flows into the lower side of the substrate support part 200 through the exhaust part 500 , in particular, through a gap between the partition wall part 520 and the substrate seating plate 210 . This may contaminate the lower surface of the substrate seating plate 210 or the inside of the process chamber 100 .

In order to solve the above problems, as shown in FIG. 1 , an inert gas such as argon (Ar) or nitrogen (N) is injected through the lower portion of the process chamber 100 so that the process gas is transferred to the lower side of the substrate support part 200 . There is a method of preventing the lower surface of the substrate support 200 from being contaminated by the process gas by preventing it from penetrating into the substrate.

However, since gas is exhausted by a plurality of exhaust ports 510 formed on the lower surface of the process chamber 100 and a vacuum pump 600 connected to the exhaust ports 510, in the case of a substrate processing apparatus to which this method is applied, There is a problem in that it is difficult to effectively prevent the process gas from flowing into the space between the substrate seating plate 210 and the heater unit 700 through the injected inert gas.

In particular, as shown in FIG. 2 , a first vacuum pump coupled with one exhaust port 510 formed on the side corresponding to the source gas injection unit S in consideration of the flow of the process gas for uniform substrate processing ( In the case of a dual pump structure using a second vacuum pump (not shown) coupled to two exhaust ports 510 formed on the side corresponding to the side of the injection unit R and the reactive gas injection unit R, the bias of the injected inert gas distribution is Since the generation is larger, the contamination of the lower surface of the substrate mounting plate 210 cannot be effectively prevented only with the inert gas supplied from the lower portion of the process chamber 100 .

As a method for solving this problem, the substrate processing apparatus according to the present invention is provided in the substrate support unit 200 to prevent the process gas from penetrating into the space between the lower surface of the substrate seating plate 210 and the upper surface of the heater unit 700 . In order to do so, it may include an inert gas supply unit 220 for supplying an inert gas.

Through this, the lower surface of the substrate seating plate 210 can be effectively prevented from being contaminated by the process gas.

In the first embodiment, the inert gas supply unit 220 communicates with an external gas supply device and includes a first gas supply passage 231 and a first gas supply passage 231 formed inside the shaft portion 230 . A plurality of gas fractions communicating with the inert gas flow path 201 formed inside the substrate seating plate 210 and communicating with the inert gas flow path 201 and formed on at least one of the lower surface and the side surface of the substrate seating plate 210 . May include crews.

The gas supply device is configured to supply an inert gas from the outside of the process chamber 100 to the inert gas supply unit 220 , and various configurations are possible.

The first gas supply passage 231 is provided in the shaft part 230 to deliver the inert gas supplied through the gas supply device to the inert gas passage 201 to be described later, and various configurations are possible.

For example, in the shaft part 230 , a gas supply pipe part 232 forming a first gas supply passage 231 for supplying an inert gas may be installed in an empty space inside.

The inert gas supplied through the gas supply pipe part 232 is heated to a certain temperature (eg, 150° C.) by a separate heating means (not shown) in order to prevent the temperature of the substrate support part 200 from dropping. It can be supplied as is.

The inert gas flow path 201 may be formed inside the substrate seating plate 210 to communicate with the first gas supply flow path 231 .

The inert gas flow path 201 is formed inside the substrate seating plate 210 and is a flow path through which the inert gas supplied from the outside flows, and may be formed in various shapes and patterns.

The inert gas flow path 201 is an area that does not vertically overlap with the substrate seating part 202 on which the substrate 10 is seated so that the heat supplied through the heater part 700 is uniformly transmitted to the substrate 10 . It is preferably formed in

For example, as shown in FIG. 4A , when a plurality of substrates 10 are arranged at equal intervals along the circumferential direction on the substrate mounting plate 210 , the inert gas flow path 201 is the substrate mounting plate 200 . ) may be formed in a radial shape passing between each of the substrate seating portions 202 around the central portion.

In the central portion of the substrate seating plate 200 , the inert gas passage 201 may communicate with the first gas supply passage 231 .

The plurality of gas injection holes communicate with the inert gas flow path 201 and may be formed on at least one of a lower surface and a side surface of the substrate seating plate 210 .

For example, the inert gas supply unit 220 may include a plurality of first gas injection holes 224 formed on the lower surface of the substrate seating plate 210 .

The first gas injection hole 224 communicates with the inert gas flow path 201 and is formed on the lower surface of the substrate support unit 200 to inject the inert gas. Various configurations are possible.

The first gas injection holes 224 are formed at positions corresponding to the inert gas flow path 201 on the lower surface of the substrate seating plate 210 and may be formed in various patterns.

For example, the first gas injection holes 224, as shown in FIG. 4A, correspond to the inert gas flow path 201 formed in a radial direction, in a radial direction from the center portion of the substrate seating plate 210 to the outer portion. It may be arranged in one or more rows, preferably radially, depending on the embodiment, but this is only one embodiment of the formation pattern of the first gas injection hole 224 and is not limited thereto.

When the plurality of first gas injection holes 224 are arranged in one or more rows (radial arrangement) from the central portion (c) of the substrate seating plate 210 to the outer edge portion, as shown in FIGS. 3A to 4A, the substrate support part As the 200 rotates, the inert gas injected from the plurality of first gas injection holes 224 is evenly supplied to the lower surface of the substrate seating plate 210, so that the inflow of the process gas to the lower surface of the substrate support plate 210 can be effectively blocked. have.

3A to 4A illustrate a case in which the plurality of first gas injection holes 224 arranged in one row are arranged in a straight line along the radial direction, but the present invention is not limited thereto. That is, as long as the first gas injection hole 224 does not vertically overlap the substrate seating part 202, it may be arranged in various ways.

Meanwhile, the first gas injection hole 224 may inject an inert gas in various ways.

For example, the first gas injection hole 224 may inject an inert gas directly downward from the lower surface of the substrate support part 200 as shown in FIG. 3A .

As another example, the first gas injection hole 224 may inject an inert gas by being inclined with respect to a normal line to the lower surface of the substrate support part 200 .

Specifically, as shown in FIG. 6 , the first gas injection hole 224 is inclined toward the outside of the substrate seating plate 210 with respect to the normal to the lower surface of the substrate support part 200 to inject the inert gas. can do.

Since the first gas injection hole 224 injects an inert gas toward the outside of the substrate support 200 , there is an advantage that the process gas can more effectively block the penetration into the lower surface of the substrate seating plate 210 .

In addition, as shown in FIG. 4A , the first gas injection hole 224 may be inclined toward the direction opposite to the rotation direction of the substrate support 200 to inject the inert gas.

That is, the first gas injection hole 224 may inject an inert gas to form an inclination in a clockwise direction with respect to the substrate support part 200 when the substrate support part 200 rotates in a counterclockwise direction.

The first gas injection hole 224 is inclined in consideration of the rotation direction of the substrate support part 200 to inject the inert gas, so that the gas injected from the first gas injection hole 224 is finally directed downward. There are advantages to doing so.

On the other hand, although not shown, the first gas injection hole 224 is inclined toward the outer direction of the substrate seating plate 210 and at the same time inclined toward the direction opposite to the rotation direction of the substrate seating plate 210 is inactive. Of course, it is also possible to inject gas.

As another example, the inert gas supply unit 220 may include a plurality of second gas injection holes 226 formed on the side surface of the substrate mounting plate 210 .

The second gas injection hole 226 may communicate with the end of the inert gas flow path 201 .

The second gas injection hole 226 may be formed in various shapes and patterns if gas can be injected from the side surface of the substrate seating plate 210 , for example, along the periphery of the side surface of the substrate seating plate 210 , etc. may be formed at intervals.

When the plurality of second gas injection holes 226 are disposed along the side surface of the substrate seating plate 210 as shown in FIGS. 3B to 4B , the plurality of second gas injection holes are rotated while the substrate support 200 is rotated. Since the inert gas injected at 226 is injected toward the gap between the side surface of the substrate seating plate 210 and the partition 520 , the inflow of the process gas to the lower surface of the substrate seating plate 210 can be effectively blocked.

Meanwhile, the second gas injection hole 226 may inject an inert gas in various ways.

For example, the second gas injection hole 226 may inject an inert gas in a direction parallel to a horizontal plane from the side of the substrate mounting plate 210 . At this time, the second gas injection hole 226 injects an inert gas in parallel to the radial direction of the substrate seating plate 210 or is inclined (in particular, in a direction opposite to the rotation direction of the substrate seating plate 210 ). inert gas can be injected.

As another example, the second gas injection hole 226 is inclined upward to incline in the upper direction of the substrate seating plate 210 with respect to the reference plane parallel to the horizontal plane from the side of the substrate seating plate 210 to spray the inert gas. can do.

Although the first gas injection hole 224 and the second gas injection hole 226 have been described separately, the first gas injection hole 224 and the second gas injection hole 224 and the second gas injection hole are respectively formed on the lower surface and the side surface of the substrate seating plate 210 . Of course, a structure in which 226 is formed is also possible.

In the second embodiment, the inert gas supply unit 220 communicates with an external gas supply device and includes a first gas supply passage 231 formed inside the shaft unit 230 and a lower surface of the substrate seating plate 210 . It may include a plurality of gas injection members 400 which are detachably coupled to the inert gas flow passage 201 communicating with the first gas supply passage 231 therein is formed.

Hereinafter, the second embodiment will be described in detail focusing on the differences from the first embodiment.

Unlike the first embodiment in which the inert gas flow path 201 is formed inside the substrate seating plate 210 , in the second embodiment, the inert gas flow path 201 is a gas injection member coupled to the lower surface of the substrate seating plate 210 . 400 is formed inside.

In the case of the second embodiment, since the inert gas flow path 201 is formed in the gas injection member 400 , the substrate seating plate 210 includes the first gas supply flow path 231 of the shaft part 230 and the gas. A second gas supply passage 204 for communicating the inert gas passage 201 of the injection member 400 may be provided.

The second gas supply passage 204 may be formed inside the substrate seating plate 210, and may have various shapes and configurations if the first gas supply passage 231 and the inert gas passage 201 can communicate with each other. It is possible.

The second gas supply passage 204 may communicate with the inert gas passage 201 through one end of the gas injection member 400 .

On the other hand, in order to prevent the temperature of the substrate support part 200 from being lowered by the inert gas flow, the gas injection member 400 overlaps the substrate seating part 202 of the lower surface of the substrate seating plate 210 in the vertical direction. It is preferable to be installed in an area where it is not.

For example, when the substrate seating plate 210 is provided with a plurality of substrate seating parts 202 on the upper surface of which a plurality of substrates 10 are mounted along the circumferential direction around the center of the substrate seating plate 210, The plurality of gas injection members 400 are disposed along the circumferential direction around the central portion of the substrate seating plate 210 in a region that does not overlap the substrate seating portion 202 vertically among the lower surfaces of the substrate seating plate 210 . can be

The gas injection member 400 is capable of various coupling methods as long as it can be stably coupled to the substrate seating plate 210. For example, as shown in FIG. 4b, for ease of detachment, the substrate seating plate 210 is It may be coupled in such a way that it slides toward the center of the substrate mounting plate 210 from the side of the edge.

In addition, it goes without saying that the gas injection member 400 and the substrate seating plate 210 may be coupled through a bolting member to enable stable fixing.

In this case, a plurality of coupling grooves 211 may be formed on the lower surface of the substrate seating plate 210 to be respectively coupled to the gas injection members 400 .

The coupling groove 211 may extend radially from the center of the substrate mounting plate 210 to the edge, as shown in FIG. 4B .

In this case, one gas injection member 400 may be inserted/removed along the horizontal direction for each of the coupling grooves 211 .

The height of the coupling groove 211 may be smaller than or equal to the height of the gas injection member 400 so that the gas injection member 400 is not depressed from the lower surface of the substrate seating plate 210 .

On the other hand, unlike the first embodiment in which a plurality of gas injection holes are formed on at least one of the lower surface and the side surface of the substrate seating plate 210 , in the second embodiment, the plurality of gas injection holes are formed on the lower surface of the substrate seating plate 210 . It is formed on the gas injection member 400 coupled to. In other words, the plurality of gas injection holes may be formed at positions corresponding to at least one of a lower surface and a side surface of the substrate seating plate 210 when coupled to the substrate seating plate 210 of the gas injection member 400 .

Specifically, the inert gas supply unit 220 may include a plurality of first gas injection holes 224 formed at positions corresponding to the lower surface of the substrate seating plate 210 of the gas injection member 400 .

As shown in FIG. 5A , the first gas injection hole 224 may be formed in one or more rows along the longitudinal direction of the gas injection member 400 .

Similarly, the inert gas supply unit 220 may include a plurality of second gas injection holes 226 formed at positions corresponding to the side surfaces of the substrate seating plate 210 among the gas injection members 400 . .

In the case of the second embodiment, it goes without saying that the inert gas flow path 201 and the plurality of gas injection holes may be configured the same as or similar to those of the first embodiment except for the formation positions.

In the third embodiment, the inert gas supply unit 220 communicates with an external gas supply device and includes a first gas supply passage 231 formed inside the shaft unit 230 and a lower surface of the substrate seating plate 210 . It may include a plurality of gas injection members 400 that are detachably coupled to the substrate seating plate 210 and form an inert gas flow passage 201 communicating with the first gas supply passage 231 together with the lower surface of the substrate seating plate 210 .

Hereinafter, the third embodiment will be described in detail focusing on the differences from the second embodiment.

Unlike the second embodiment in which the inert gas flow path 201 is formed inside the gas injection member 400 , in the third embodiment, the inert gas flow path 201 is formed between the lower surface of the substrate seating plate 210 and the gas injection member 400 . ) is formed between the upper surfaces.

That is, the inert gas flow path 201 may be formed by coupling the gas injection member 400 to the lower surface of the substrate seating plate 210 .

At this time, the coupling groove 211 of the above-described substrate seating plate 210 may be coupled to the gas injection member 400 to constitute a part of the inert gas flow path 201 .

6 to 7, the gas injection member 400 is shown in a U-shaped cross-sectional form in which both sides are bent and coupled to the coupling groove portion 211, but this is only one embodiment. It can be formed in various shapes and sizes according to the

In the case of the third embodiment, the inert gas flow path 201 may be configured the same or similar to the above-described second embodiment except that the inert gas flow path 201 is formed between the substrate seating plate 210 and the gas injection member 400 . is of course

Meanwhile, in the case of the first embodiment, the inert gas flow path 201 and the gas injection holes 224 and 226 may be formed by processing the substrate mounting plate 210 through processing equipment such as a gun drill.

However, in the case of the substrate support unit 200 , it is common for a coating film to be formed on the outside to improve corrosion resistance, and considering that cleaning is required periodically, the inert gas flow path 201 and gas in the substrate mounting plate 210 are Rather than forming the injection holes 224 and 226, the inert gas flow path 201 and the gas injection holes 224 and 226 are formed through a separate gas injection member 400 as in the second and third embodiments. Forming is more preferable from the viewpoint of processing piece, manufacturing cost, and maintenance.

The present invention is provided with an inert gas supply unit 220 for preventing contamination of the lower surface of the substrate seating plate 210 in the substrate support unit 200, so that the exhaust structure in the process chamber 100, the process gas injection structure, and the substrate support structure are also provided. In spite of this, it is possible to effectively block the penetration of the process gas into the lower surface of the substrate seating plate 210 .

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention as noted above should not be construed as being limited to the above embodiments, and It will be said that the technical idea and the technical idea accompanying the fundamental are all included in the scope of the present invention.

10: substrate 100: process chamber
200: substrate support unit 300: gas injection unit

Claims (17)

a process chamber 100 forming a closed processing space (S) for substrate processing;
A substrate support unit 200 including a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted and a shaft unit 230 supporting the substrate mounting plate 210 on its upper surface. Wow;
a driving unit which rotates the substrate support unit 200 with respect to a central axis (C) and vertically drives;
a gas injection unit 300 facing the substrate supporting unit 200 and installed on the upper side of the process chamber 100 to inject a process gas to the substrate 10 seated on the substrate supporting unit 200;
an exhaust unit 500 installed along the outer periphery of the substrate support unit 200 and exhausting the gas injected from the gas injection unit 300 to the outside through the lower portion of the process chamber 100;
a heater unit 700 installed under the process chamber 100 to heat the substrate 10 seated on the substrate mounting plate 210;
An inert gas supply unit 220 that is provided on the substrate seating plate 210 and supplies an inert gas to prevent the process gas from penetrating into the space between the lower surface of the substrate seating plate 210 and the upper surface of the heater unit 700. includes,
The inert gas supply unit 220 communicates with an external gas supply device and communicates with a first gas supply passage 231 formed inside the shaft portion 230 and the first gas supply passage 231, and the An inert gas flow path 201 formed inside the substrate seating plate 210, and a plurality of gas injection holes communicating with the inert gas flow path 201 and formed in at least one of a lower surface and a side surface of the substrate seating plate 210 A substrate processing apparatus comprising: delete a process chamber 100 forming a closed processing space (S) for substrate processing;
A substrate support unit 200 including a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted and a shaft unit 230 supporting the substrate mounting plate 210 on its upper surface. Wow;
a driving unit which rotates the substrate support unit 200 with respect to a central axis (C) and vertically drives;
a gas injection unit 300 facing the substrate supporting unit 200 and installed on the upper side of the process chamber 100 to inject a process gas to the substrate 10 seated on the substrate supporting unit 200;
an exhaust unit 500 installed along the outer periphery of the substrate support unit 200 and exhausting the gas injected from the gas injection unit 300 to the outside through the lower portion of the process chamber 100;
a heater unit 700 installed under the process chamber 100 to heat the substrate 10 seated on the substrate mounting plate 210;
An inert gas supply unit 220 that is provided on the substrate seating plate 210 and supplies an inert gas to prevent the process gas from penetrating into the space between the lower surface of the substrate seating plate 210 and the upper surface of the heater unit 700. includes,
The inert gas supply unit 220 communicates with an external gas supply device and is detachably attached to a first gas supply passage 231 formed inside the shaft unit 230 and the lower surface of the substrate seating plate 210 . It is coupled and includes a plurality of gas injection members 400 in which an inert gas flow passage 201 communicating with the first gas supply passage 231 is formed therein,
The gas injection member 400 is at a position corresponding to at least one of a lower surface and a side surface of the substrate seating plate 210 when combined with the substrate seating plate 210. At least one communicating with the inert gas flow path 201 A substrate processing apparatus, characterized in that the gas injection hole is formed. a process chamber 100 forming a closed processing space (S) for substrate processing;
A substrate support unit 200 including a substrate mounting plate 210 having a substrate mounting unit 202 on which a plurality of substrates 10 are mounted and a shaft unit 230 supporting the substrate mounting plate 210 on its upper surface. Wow;
a driving unit which rotates the substrate support unit 200 with respect to a central axis (C) and vertically drives;
a gas injection unit 300 facing the substrate supporting unit 200 and installed on the upper side of the process chamber 100 to inject a process gas to the substrate 10 seated on the substrate supporting unit 200;
an exhaust unit 500 installed along the outer periphery of the substrate support unit 200 and exhausting the gas injected from the gas injection unit 300 to the outside through the lower portion of the process chamber 100;
a heater unit 700 installed under the process chamber 100 to heat the substrate 10 seated on the substrate mounting plate 210;
An inert gas supply unit 220 that is provided on the substrate seating plate 210 and supplies an inert gas to prevent the process gas from penetrating into the space between the lower surface of the substrate seating plate 210 and the upper surface of the heater unit 700. includes,
The inert gas supply unit 220 communicates with an external gas supply device and is detachably attached to a first gas supply passage 231 formed inside the shaft unit 230 and the lower surface of the substrate seating plate 210 . A plurality of gas injection members 400 are combined to form an inert gas passage 201 communicating with the first gas supply passage 231 together with the lower surface of the substrate seating plate 210,
The gas injection member 400 is at a position corresponding to at least one of a lower surface and a side surface of the substrate seating plate 210 when combined with the substrate seating plate 210. At least one communicating with the inert gas flow path 201 A substrate processing apparatus, characterized in that the gas injection hole is formed. 5. The method according to any one of claims 3 and 4,
The substrate seating plate 210 includes a second gas supply passage 204 for communicating the first gas supply passage 231 and the inert gas passage 201 therein. . 5. The method according to any one of claims 1, 3 and 4,
The inert gas flow path (201) is a substrate processing apparatus, characterized in that formed in a region that does not vertically overlap with the substrate seating portion (202). 5. The method according to any one of claims 3 and 4,
The substrate seating plate 210 is provided with a plurality of substrate seating portions 202 on the upper surface of which a plurality of substrates 10 are mounted along the circumferential direction around the center of the substrate seating plate 210,
The plurality of gas injection members 400 are located in a region of the lower surface of the substrate seating plate 210 that does not overlap vertically with the substrate seating part 202 in a circumferential direction around the center of the substrate seating plate 210 . Substrate processing apparatus, characterized in that disposed along. 8. The method of claim 7,
A substrate processing apparatus, characterized in that a plurality of coupling grooves 211 are formed on a lower surface of the substrate seating plate 210 in a radial direction from a center portion to an edge and are respectively coupled to the gas injection member 400 . 5. The method according to any one of claims 3 to 4,
The inert gas supply unit 220 includes a plurality of first gas injection holes 224 formed at positions corresponding to the lower surface of the substrate seating plate 210 among the gas injection members 400 . Substrate processing equipment. 10. The method of claim 9,
The substrate seating plate 210 is made of a circular planar shape,
The plurality of first gas injection holes 224 are disposed in one or more rows in a radial direction from a central portion to an outer portion of the substrate seating plate 210 . 5. The method according to any one of claims 3 to 4,
The inert gas supply unit 220 includes a plurality of second gas injection holes 226 formed at positions corresponding to the side surfaces of the substrate seating plate 210 among the gas injection members 400 . Substrate processing equipment. 10. The method of claim 9,
The first gas injection hole (224), the substrate processing apparatus, characterized in that the inert gas is injected directly downward from the lower surface of the substrate mounting plate (210). 10. The method of claim 9,
The first gas injection hole (224), the substrate processing apparatus, characterized in that for injecting the inert gas by making an inclination with respect to the normal to the lower surface of the substrate seating plate (210). 14. The method of claim 13,
The first gas injection hole 224 is a substrate processing apparatus, characterized in that the inert gas is injected by making an inclination toward the outside of the substrate seating plate 210 with respect to the normal to the lower surface of the substrate seating plate 210 . 14. The method of claim 13,
The first gas injection hole 224 is inclined toward the direction opposite to the rotational direction of the substrate seating plate 210 with respect to a normal to the lower surface of the substrate seating plate 210, characterized in that for spraying the inert gas. substrate processing equipment. 12. The method of claim 11,
The second gas injection hole (226), the substrate processing apparatus, characterized in that for injecting the inert gas in a direction parallel to the horizontal plane at a position corresponding to the side surface of the substrate seating plate (210). 12. The method of claim 11,
The second gas injection hole 226 is inclined upward so as to incline in the upper direction of the substrate seating plate 210 with respect to a reference plane parallel to a horizontal plane at a position corresponding to the side surface of the substrate seating plate 210 to release an inert gas. A substrate processing apparatus, characterized in that for spraying.

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