CN105793959A - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- CN105793959A CN105793959A CN201380081398.XA CN201380081398A CN105793959A CN 105793959 A CN105793959 A CN 105793959A CN 201380081398 A CN201380081398 A CN 201380081398A CN 105793959 A CN105793959 A CN 105793959A
- Authority
- CN
- China
- Prior art keywords
- substrate
- dispensing orifice
- gas
- chamber
- zone line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 149
- 238000009826 distribution Methods 0.000 claims description 47
- 230000037361 pathway Effects 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 146
- 238000000034 method Methods 0.000 description 54
- 239000010409 thin film Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000010168 coupling process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a substrate processing apparatus comprising: a chamber allowing a substrate to enter and exit on one side thereof and having a first space therein; an inner chamber arranged in the first space inside the chamber and having a second space therein; a substrate support, arranged in the interior of the inner chamber, for supporting the substrate; and a gas sprayer for spraying gas on the substrate support, wherein the inner chamber comprises: a first body fixed on the upper part of the interior of the chamber; a second body arranged below the first body, being capable of moving vertically and having an exhaust hole in the central part of the bottom surface thereof; and an exhaust body connected to the exhaust hole and having a gas exhaust path in the interior thereof.
Description
Technical field
The present invention relates to a kind of substrate support device, and more precisely, relate to a kind of substrate-treating apparatus that can adjust environment or state-variable in substrate processing space symmetrically.
Background technology
The various electronic installations such as such as semiconductor memory are manufactured by stacking various thin film.It is to say, various thin film are formed on substrate, and by using photoetching process to pattern the thin film formed with forming apparatus structure.
Thin film can be classified into conductive film, dielectric film and insulation film according to its material, and is manufactured by various methods.Method for manufacturing thin film can mainly be classified into physical method and chemical method.Recently, in order to effectively manufacture thin film, utilize the method applying heat to substrate during manufacturing process or the method using plasma.When passing through the method that use plasma forms thin film on substrate, thin film fabrication temperature can decline, and film deposition rate can increase.
Common apparatus for manufacturing thin film comprises: have the chamber of inner space, load substrates and execution technique in described inner space；It is placed in chamber to support and to heat the substrate support of substrate；And place's process gases is fed to the gas ejector on substrate support.And, chamber may be connected to exhaustor and exhaust pump, to form vacuum environment in the inner space of chamber.Substrate is loaded on substrate support, and adsorbs on substrate from the process gases of gas ejector injection to react on substrate, thus manufacture various thin film.Herein, heated substrate supports part, to produce plasma in chamber, thus accelerates the deposition of thin film.
But, manufacture in the equipment of thin film being used for, it may be difficult to the such as state-variable such as air-flow, temperature distribution and plasmoid is adjusted and to be worth.
For example, manufacturing in the equipment of thin film being used for, exhaustor is connected to the low portion of the side of chamber, to adjust the pressure of inner space and to discharge injection gas.Consequently, because the gas that the gas ejector from the upper zone being placed in chamber is fed on substrate flow to exhaustor, so the air-flow at types of flexure is uneven.And, a part for the sidewall of chamber defines the substrate loading hole loading or unloading substrate.As a result, the structure of the inner space of chamber may occur in which unsymmetry, and therefore, air-flow and may occur in which unsymmetry in temperature distribution.
When the environment and various state-variable of chamber occur inhomogeneities and unsymmetry (as described above), it is difficult to manufacture the thin film with uniform thickness and quality on substrate.And, the inhomogeneities of thin film can make the characteristic degradation of the various devices of manufacture.
Summary of the invention
Technical problem
The present invention provides a kind of substrate-treating apparatus that can control processing environment and various state-variable in substrate processing space equably.The present invention provides a kind of substrate-treating apparatus that can distribute various state-variable in substrate processing space symmetrically.
The present invention provides a kind of substrate-treating apparatus that can manufacture thin film on substrate equably.
Technical solution
According to one exemplary embodiment, substrate-treating apparatus comprises: is loaded and is unloaded the chamber of substrate by its side, have the first space in described chamber；Internal chamber, is placed in the first space in chamber, has second space in described internal chamber；Substrate support, is placed in internal chamber to support substrate；And gas ejector, it being placed in so that gas is ejected on substrate support above substrate support, wherein said internal chamber comprises: the first noumenon, is fixed to the upper part in chamber；Second body, is placed on the low portion of the first noumenon and is vertically movable, and described second body has steam vent in the core of its lower surface；And aerofluxus body, it is connected in steam vent and aerofluxus body and defines exhaust pathway.Herein, the first noumenon and the second body can be coupled to each other to define the insulating space making second space and the first spatial separation.
Air vent may be connected to the core of the lower surface of chamber, and aerofluxus body can be placed in inside exhaust ports.Aerofluxus body can have the first hole being defined in upper portion side wall to allow the first space to connect and the second hole being defined in lower sides to allow exhaust pathway to connect with air vent with exhaust pathway.
And, aerofluxus body can have the hollow tubular structure vertically extended, and have the upper area being connected to steam vent and have the diameter lower area less than the diameter of upper area, and can define the 3rd hole to extend perpendicularly through the lower surface of upper area.Air vent can be connected to external exhaust gas part on one side surface.
Gas ejector can comprise: towards substrate support and the jet tray with multiple spray-hole；It is placed in above jet tray and is connected to the upper board of feed tube；And be placed between jet tray and upper board and there is the distribution plate of the multiple dispensing orifices allowing gas pass through.
Distribution plate can comprise: interior zone, comprises in center and interior zone and does not define dispensing orifice；Zone line, is defined in the outside of interior zone and zone line and defines dispensing orifice；And perimeter, the distance being defined in the outside of zone line and perimeter between dispensing orifice is gradually increased in the edge direction of perimeter.Additionally, distribution plate can comprise: interior zone, comprise in center and interior zone and do not define dispensing orifice；Zone line, is defined in the outside of interior zone and zone line according to the distance between the position change dispensing orifice of dispensing orifice；And perimeter, it is defined in the outside of zone line and perimeter and defines multiple dispensing orifice.
The surface area of perimeter is more than the surface area sum of interior zone and zone line.Zone line can comprise: the first zone line, defines multiple dispensing orifice in contact interior zone and the first zone line；And second zone line, contact perimeter and the second zone line define dispensing orifice with distance less than the distance between the dispensing orifice being defined in the first zone line.Herein, the density of the dispensing orifice that the density (it is the number of per unit area dispensing orifice) of the dispensing orifice in the second zone line can be higher than in the first zone line, and the density of the dispensing orifice in perimeter can lower than the density of the dispensing orifice in the second zone line.
And, dispensing orifice can radially be defined in perimeter, and the diameter of the feed tube diameter more than interior zone and the external diameter less than or equal to the first zone line.
Beneficial effect
According to one exemplary embodiment, because the isolation processing space wherein processing substrate has symmetrical structure in the chamber, so being asymmetrically formed the environment processing space, and can distribute various state-variable such as such as air-flow and temperature etc. symmetrically and evenly.
And, the volume in the substrate processing space in chamber can be reduced by the insulating space of separation, and therefore, film deposition rate can increase, and the amount of the gas used can decline.And, because the volume processing space reduces, so the cleaning of chamber can quickly and easily be performed.
And, from the steam vent discharge process gases being defined in the lower central part processing space, the outside to chamber of the gas discharging in chamber can will be ejected into by gas ejector along shortest path by steam vent.It is therefore possible to prevent the undesirable thin film caused by byproduct of reaction is formed on the parts being placed on air flow path.
And, according to one exemplary embodiment, because gas being ejected on substrate by the state in gas ejector gas is uniformly distributed among, so can be more evenly supplied to place's process gases process in space and be allocated in process space.
As described above, the state-variables such as such as air-flow can be controlled symmetrically to manufacture the thin film on the almost whole region of substrate with uniform thickness.It addition, for each region, the thin film of manufacture can have nearly identical to one another or similar characteristic.Therefore, the quality of the thin film being formed on substrate can be improved.
And, process space can be reduced to pass through to use a small amount of gas to manufacture thin film, and the amount that can reduce the gas of use improves productivity with low cost.
Accompanying drawing explanation
Fig. 1 is the schematic cross section of the substrate-treating apparatus according to one exemplary embodiment.
Fig. 2 is the schematic cross section of the inside that the substrate support device according to one exemplary embodiment is described.
Fig. 3 is the schematic cross section of the gas ejector according to one exemplary embodiment.
Fig. 4 is the schematic plan view of the distribution plate in the gas ejector of Fig. 3.
Fig. 5 illustrates according to the concept map of the technique of load substrates in the substrate-treating apparatus of one exemplary embodiment.
Fig. 6 illustrates at the concept map according to the technique processing substrate in the substrate-treating apparatus of one exemplary embodiment.
Detailed description of the invention
Specific embodiment is described in detail below with reference to accompanying drawing.But, the present invention can embody in different forms, and should not be construed as limited by embodiments set forth herein.More properly, it is provided that these embodiments are so that the present invention will be thorough and complete, and the scope of the present invention intactly will be conveyed to those skilled in the art.In the drawings, the size in Ceng He district is exaggerated for clarity purposes.Similar reference numerals refers to like.
Fig. 1 is the schematic cross section of the substrate-treating apparatus according to one exemplary embodiment, and the schematic cross section that Fig. 2 is the inside that the substrate support equipment according to one exemplary embodiment is described.
Referring to Fig. 1 and 2, comprise according to the substrate-treating apparatus of one exemplary embodiment: load and unload substrate (S) by its side and wherein there is the chamber (100) of the first space (130)；Internal chamber (200), it is placed in the first space (130) in chamber (100) and wherein has second space (240)；Substrate support (510), it is placed in internal chamber (200) to support substrate (S)；And gas ejector (300), it is placed in substrate support (510) top to be ejected into by gas on substrate support (510).Herein, internal chamber (200) comprises: the first noumenon (220), and it is fixed to the upper part in chamber (100)；And the second body (210) being vertically movable, it is placed on the low portion of the first noumenon (220).The first noumenon (220) and the second body (210) are coupled to define insulating space, and described insulating space isolates second space and the first space.
And, substrate-treating apparatus comprises: rotating shaft (520), and it supports and mobile substrate support (510)；And vacuum forming unit (700), it forms vacuum environment in chamber (100).And, gas ejector (300) may be connected to electric power supply unit (600) to serve as upper electrode.It is to say, gas ejector (300) may act as upper electrode, described upper electrode produces plasma when applying electric power between substrate support (510) and gas ejector (500).
Substrate-treating apparatus can be the equipment for substrate (S) performs various process after substrate (S) can being loaded into chamber (100).For example, in order to manufacture semiconductor device in chamber (100), chip can be loaded, and can pass through to use gas ejector (300) supplying process gas to manufacture thin film on chip.
Chamber (100) ((110) and (120)) comprises: main body (110), it has open upper part；And top cover (120), it is installed in the upper part of main body (110) its openable.When top cover (120) is coupled to the upper part of main body (110) to close the inside of main body (110), chamber (100) defines the space performing the technique that such as depositing operation etc. processes substrate (S).Because space is generally formed in vacuum environment, so discharge portion is connected to chamber (100).For example, the exhaustor (720) for discharging gas existing in space is connected to the precalculated position of chamber (100), for instance the lower surface of chamber (100) or side surface.
And, the through hole that the rotating shaft (520) of substrate support (510) and the aerofluxus body (230) of internal chamber (200) pass through is defined in the lower surface of main body (110).Herein, through hole can be defined with the hole through chamber (100) (exactly, the core of the lower surface of chamber body (110)).Through hole may act as air vent (140), by the gas in described air vent discharge chamber (100).And, air vent (140) can define exhaust space, and described exhaust space downwardly extends from the lower surface of main body (110), and exhaust space can be connected to external exhaust gas part in its side.For example, exhaust space can be connected to outer exhaust duct (720) at a side surface of the low portion of air vent (140) by connecting tube (150).And, the opening (111) of the outside being loaded in chamber (100) by substrate (S) or being unloaded to chamber (100) can be defined in the sidewall of main body (110), and gate valve (900) is mountable on the outside of opening (111).
Although the chamber (100) comprising main body (110) and top cover (120) described above, but one exemplary embodiment is not limited to the structure of chamber (100).For example, chamber can have various structure.For example, main body (110) and top cover (120) can be integrated each other.And, although described above is exhaust structure, wherein air vent (140), connecting tube (150) and exhaustor (720) are connected to each other, if but discharge gas by the core of the low portion of chamber, then the exhaust structure of chamber can differently change.
Internal chamber (200) is installed in chamber (100) as the parts separated with chamber (100), to define insulating space, wherein generally processes substrate (S).That is, the first space (130) defined relative to outside by chamber (100) provides the insulating space independent second space (240) as isolating with the first space (130), and in insulating space, performs the substrate processing process such as such as thin film deposition.Internal chamber (200) comprises: the first noumenon (220), and it is the fixing body of the upper part being fixed in chamber (100)；And may move the second body (210), it is placed on the low portion of the first noumenon (220), and is vertically movable.The first noumenon (220) and the second body (210) are coupled to define second space (240).
Herein, the first noumenon (220) can be fixed to the upper part of main body (110) with the upper inside wall around main body (110).For example, the first noumenon (220) can be manufactured into annular ring shape.Second body (210) can have the top surface of the lower surface contacting the first noumenon (220) when the second body (210) is vertically movable and is then coupled to the first noumenon (220).Herein, coupling unit can be placed on the top surface of the second body (210).And, the second body (210) can have container shapes, and comprises: lower surface (211), its preset distance spaced apart with the lower surface of substrate support (510)；And sidewall (212), it upwardly extends from the edge of lower surface (211) and preset distance spaced apart with the side surface of substrate support (510).It is to say, the second body (210) can have and the shape of substrate (S) or the central point of substrate support (510).The thickness of the sidewall (212) of the second body (210) can upwards increase gradually, and the coupling unit (214) being coupled to the lower surface of the first noumenon (220) can be placed on the top surface (213) of the second body (210).For example, the projection projected upwards can be placed on the top surface (213) of the second body.In this situation, the recessed groove being inserted correspondingly into projection can be defined in the lower surface of the first noumenon (220).On the other hand, recessed groove can be defined in the top surface (213) of the second body (210), and the projection projected upwards can be placed in the lower surface of the first noumenon (220).Coupling unit can improve the attachment between the first and second bodies (220) and (210), and easily makes two parts coupled to each other.And, at least one in the first and second bodies (220) and (210) or all can pass through to use ceramic material manufacture.Ceramic material can have excellent thermal insulation, heat stability and corrosion resistance.Therefore, various technique can be performed in the second space defined by internal chamber (200).
As described above, load and the opening (111) of unloading substrate (S) can be defined in the side of chamber (100).Therefore, the first space (130) can be asymmetric near opening (111).On the other hand, second space (240) has the symmetrical structure relative to substrate or the center of substrate support of the structure by internal chamber (200).And, because second space (240) may correspond to the inner space in double-cavity structure, so when heated substrate supports part (510), the surrounding that can maintain substrate support (510) and substrate support (510) is in all gentle high temperature.When substrate processing is performing and when having excellent thermal insulation (as described above) with the first spatial separation and maintaining in symmetric second space, substrate (S) can be processed equably.For example, the thin film with uniform thickness can be formed on substrate.And, second space can have the volume of the volume less than the first space.When second space (240) has relatively small volume (as described above), it is incorporated into the place's process gases in second space and can quickly arrive substrate (S) to improve thin film deposition sedimentation rate on substrate, and can by using place's process gases of relatively small amount to perform to process technique.And, even if producing side-product on the inwall of internal chamber (200) by thin film deposition processes, owing to internal chamber (200) being maintained at the temperature of the temperature being relatively larger than chamber (100) and stably producing side-product, still can easily and quickly clean internal chamber (200) to improve productivity.
Steam vent (219) is defined in the core of lower surface (211) of the second body.Steam vent (219) may be connected to aerofluxus body (230), and described aerofluxus body (230) wherein defines the exhaust pathway that gas flows through.Aerofluxus body (230) can have the hollow tubular structure vertically extended.Aerofluxus body (230) can comprise the upper zone being connected to steam vent (219) and the lower region (232) of the diameter of the diameter having less than upper zone (231).Herein, the path (that is, the inner track of hollow pipe) extending perpendicularly through aerofluxus body (230) can be changed into the exhaust pathway that discharge gas is along which.Aerofluxus body (230) comprises: be defined in upper portion side wall (that is, the sidewall of upper zone (231)) multiple first holes (233) to allow the first space (130) to connect with exhaust pathway；It is defined in lower sides (that is, the sidewall of lower region (232)) multiple second holes (234) to allow exhaust pathway to connect with air vent (140)；And be defined in the lower surface of upper zone with vertically through multiple 3rd holes (235).Herein, the first hole (233) and the 3rd hole (235) can be connected to each other or separated from one another, and therefore relative to each other define individually.Therefore, the gas introduced from gas ejector (300) may be used for the substrate processing process second space (240), and is discharged into outside from second space (240) by aerofluxus body (230).It is to say, gas is through the space between the lower surface of the space the inwall of substrate support (510) and internal chamber (200) and substrate support (510) and internal chamber (200).Then, gas is through steam vent (219) and aerofluxus body (230), and is discharged into air vent (140) and outer exhaust duct.Herein, through aerofluxus body (230) gas can directly through the exhaust pathway vertically extended, and be subsequently passed through the second hole (234) with flow to air vent (140) or through aerofluxus body (230) the 3rd hole (235) to flow to air vent (140).Existing in or the gas that is introduced in chamber (100) (that is, the first space (130)) may pass through the first hole (233) (described first hole through the upper part of aerofluxus body (230)) to flow to air vent (140) by exhaust pathway or to flow to air vent (140) by the first hole (233) and the 3rd hole (235).
The core of each in above-described parts can comprise the central point of each in parts and expand to the presumptive area of outside.Herein, the surface area of presumptive area can change (without concrete restriction) according to the size of parts, and lures that flow of exhaust moves center position into.And, aerofluxus body (23) 0 can be integrated with the second body (210) or be fabricated as separate part and be coupled to the second body (210).Aerofluxus body (230) may be connected to the outside driving axle (not shown) of chamber (100) and driver element (not shown) to be operated by driving axle and driver element to be vertically movable, and therefore, the second body (210) is vertically movable.And, air vent (140) can be integrated with the low portion of chamber (100), and is manufactured to separate part, and is installed in the lower surface of chamber (100).
As described above, because exhaust structure is arranged at chamber (100) and the lower central part of internal chamber (200), so lower central part can be passed through discharge gas.And, the exhaust pathway from each position of chamber (100) and internal chamber (200) to exhaust structure can be maintained symmetrically and evenly.Therefore, the inhomogeneities in the uneven air-flow that occurs because of bias-air exhaust or substrate processing process can be limited or prevent.
Substrate support (510) is for for supporting substrate (S) and the assembly being installed on the downside in internal chamber (200).Substrate support (510) is installed on rotating shaft (520).Substrate support (510) can be set to the plate shape with predetermined thickness.It is to say, substrate support (510) can have the shape of the shape being similar to substrate (S).For example, if substrate (S) is circular chip, then substrate support (510) can be manufactured in round plate shape.But, the invention is not restricted to this, and therefore can differently revise embodiments of the invention.Substrate support (510) is flatly placed in internal chamber (200), and rotating shaft (520) is attached perpendicularly to the lower surface of substrate support (510).Rotating shaft (520) is connected to the driver elements (not shown) such as such as exterior motor by the through hole being defined in the lower surface of chamber (100), to allow substrate support (510) to rise, decline or rotate.Herein, the space between rotating shaft (520) and through hole can be passed through to use the vacuum that corrugated tube (not shown) is sealed against in chamber (100) to be released during substrate processing process.
And, the heater (not shown) for heated substrate supports part (510) may be provided in substrate support (510).Heater may be connected to external power source.When heater is applied electric power, the substrate (S) on substrate support (510) can be placed in heating by heated substrate supports part (510).Heater can by various methods and install in various configurations, but one exemplary embodiment is not limited to this.And, substrate support (510) is used as lower electrode.For example, substrate support (510) can ground connection, and can to gas ejector (300) apply electric power to encourage the plasma between substrate support (510) and gas ejector (300).
And, substrate support (510) can have vertically from multiple through holes of its traverse, and the stripper pin (530) used when loading and unload substrate (S) can be plugged in each in through hole.Herein, stripper pin (530) the through hole of traverse can be defined in the lower surface (211) of the second body (210).Therefore, when the second body (210) and substrate support (510) are vertically movable, during stripper pin (530) can be exposed to the upside of substrate support (510) or be placed in the through hole of substrate support (510).
Gas ejector (300) can supply a gas to chamber (100), exactly, and the inside of internal chamber (200).And, gas ejector (300) may act as the upper electrode being connected to external power source (600).It is to say, the various places process gases being fed to outside by gas ejector (300) can be ejected into substrate support (510).For example, the place's process gases for depositing thin film can be sprayed.Gas ejector (300) is mountable to define on the top cover (120) of chamber (100), and is connected to the multiple gas supply sources for supplying different classes of gas.Gas ejector (300) towards substrate support (510), and can have the predetermined area of the predetermined area being similar to substrate support (510).And, gas ejector (300) can be manufactured with the head-type of multiple spray-hole.Certainly, the unit being used for supplying a gas to chamber (100) can be manufactured into the nozzle or injector type that are inserted in chamber (200).And, for the insulating element (800) of gas ejector (300) and top cover (120) electric insulation is mountable between gas ejector (300) and top cover (120).
For example, when head-type gas ejector, gas ejector can comprise: towards substrate support (510) and the jet tray (310) with spray-hole；It is placed in jet tray (310) top and is connected to the upper board (320) of gas supply unit；And be placed between jet tray (310) and upper board (320) and have gas the distribution plate (330) of multiple dispensing orifices of traverse.Therefore, when supplying gas from the gas supply unit (400) being connected to extraneous gas source of supply, introduced a gas between upper board (320) and distribution plate (330) by upper board (320).Then, the dispensing orifice of gas traverse distribution plate (330), and be incorporated between distribution plate (330) and jet tray (310), and it be subsequently passed through the spray-hole of jet tray (310) and be injected into substrate support (510).Because the gas introduced by the core of upper board (320) is passed distribution plate (330) and jet tray (310) and is injected into substrate support (510), so gas can be uniformly supplied to the substrate (S) supported by substrate support (510).
And, gas ejector (300) can comprise gas distribution block (420), and it is connected to for supplying gas the gas supplied from outside is uniformly distributed among and to be fed to the gas supply unit (400) of gas ejector (300).Gas supply unit (400) can comprise: is connected to the feed tube (410) of the core of upper board (320)；And it is inserted into and is installed on gas distribution block (420) on the precalculated position of feed tube (410).Feed tube (410) can define main flow channel (430), and it has hollow tubular structure and introduces gas by described main flow channel.Feed tube (410) may be provided as single parts or a plurality of parts.For example, a feed tube can have the other end disposing gas distribution block (420) on the end and its that are connected to upper board (320).Then, another feed tube can be placed in a feed tube.Herein, main flow channel (430) can be defined with the core of each in parts.Certainly, gas distribution block (420) can be integrated with the presumptive area of single feed tube.
And, gas supply unit (300) can supply multiple various gas.For example, the upper part of feed tube and exterior tube can be connected cleaning gas is fed to main flow channel (430), and can distribute block (420) laterally for the place's process gases being applied to deposition of thin film by gas.Herein, the gas that gas distribution block (420) can be introduced into is ejected into main flow channel (430) equably, and is connected to multiple exterior tube to introduce multiple places process gases.
Hereinafter, gas ejector (300) will be described in detail referring to accompanying drawing.Fig. 3 is the schematic cross section of the gas ejector according to one exemplary embodiment, and the schematic plan view of the distribution plate in the gas ejector that Fig. 4 is Fig. 3.
Referring to Fig. 3 and 4, gas ejector (300) comprises: jet tray (310), and it has the surface area of the surface area more than the substrate support (510) being the plate shape with predetermined thickness；Distribution plate (330), its with have described in have the jet tray (310) of plate shape of predetermined thickness spaced apart and be placed in distribution plate (310) top；And upper board (320), it is spaced apart with distribution plate (330) and is placed in distribution plate (330) top.
The multiple spray-holes (311) extending perpendicularly through jet tray (310) are defined in jet tray (310), and spray-hole (311) can have same diameter on the direction that hole extends, and also there is the diameter being gradually increased downwards.Multiple spray-holes (311) may be defined such that gas is ejected into substrate (S) equably.But, one exemplary embodiment is not certainly limited to the layout of spray-hole (311).
Upper board (320) can be manufactured with the form of the plate of the thickness of the thickness more than jet tray (310), and feed tube (410) may be connected to the core of upper board (320).Therefore, supplied a gas in gas ejector by upper board (320).And, upper board (320) can have the recessed groove inwardly concaved except the presumptive area (namely forming step shape part (321) on its edge) on its edge.And, the distribution plate (330) being described below can be coupled to upper board (320) step shape part.Therefore, recessed groove can have the gas that is defined between upper board (320) and distribution plate (330) the first supply space (340) of traverse.
Distribution plate (330) can be manufactured with the form of the plate of the thickness of the thickness less than jet tray (310), and therefore, the gas through upper board (320) can arrive distribution plate (310) extensive diffusive before.Multiple coupling apertures (333) can be defined in the edge of distribution plate (330).The coupling units (332) such as such as screw may pass through coupling aperture (333), and is coupled to the step shape part (321) of upper board (320).Therefore, distribution plate (330) can be coupled to upper board (320).Herein, the coupling process between distribution plate (330) and upper board (320) and the forming method of the first supply space (340) can differently be changed.For example, the step shape part projected upwards from the edge of distribution plate (330) can be placed in upper board (320), rather than is formed on upper board (320).Then, step shape part can be coupled to upper board (320).And, because distribution plate (330) is spaced apart with jet tray (310) through being positioned to, thus gas through second supply space (350) be defined in jet tray (310) and distribution plate (330).
Extend perpendicularly through distribution plate (330) to allow gas to be defined in distribution plate (330) from its multiple dispensing orifices (331) flow through.Dispensing orifice (331) is placed in distribution plate (330) with suitable distribution, thus allowing to supply equably downwards the gas of introducing.For example, distribution plate (330) can have: interior zone (A), and it comprises center and does not wherein define dispensing orifice (331)；Zone line (B) and (C), it is defined in interior zone (A) outside and wherein defines dispensing orifice (331)；And perimeter (D), its be defined in zone line (B) and (C) outside and wherein distance between dispensing orifice (331) be gradually increased in its edge direction.According to the position of dispensing orifice (331), there is the dispensing orifice (331) of different distance therebetween can be defined in zone line (B) and (C).
Interior zone (A) can prevent the gas through feed tube (420) and upper board (320) to be introduced in the jet tray (310) being placed in immediately below it, and makes the gas of introducing spread in a lateral direction.For this, gas flow downward the dispensing orifice (331) of traverse be not defined in interior zone (A).
Zone line (B) and (C) can be the region for adjusting the distribution introducing gas.Zone line (B) and (C) can comprise the first zone line (B), and it contacts interior zone (A) and wherein defines multiple dispensing orifice (331)；And second zone line (C), its contact perimeter (D) and wherein define dispensing orifice (331) with the distance closer distance than the dispensing orifice (331) in the first zone line (B).It is to say, the density (it is the number of per unit area dispensing orifice (331)) of the dispensing orifice (331) in the second zone line (C) is higher than the dispensing orifice density in the first zone line (B).Second zone line (C) is defined in path, and the gas arriving interior zone (A) flows in the path for which after colliding with interior zone (A).Because the density of the gas in this section is lower than the gas density in other section, the dispensing orifice (331) in the second zone line (C) must have of a relatively high density to supply gas equably.And, because the first zone line (B) is defined in gas feed lines (i.e. the exterior section of feed tube (420)), and not only supply in vertical direction is supplied to the gas in gas feed lines, so the density of gas can be higher than the gas density in the second zone line (C).Therefore, in order to supply gas equably, the dispensing orifice in the first zone line (B) can have the density of the density less than the dispensing orifice in the second zone line (C).Can regularly or irregularly define the dispensing orifice (331) in the first zone line (B).But, specifically do not limit the distribution of dispensing orifice (331).
Perimeter (D) can be mainly used in luring into the region that the gas of introducing is downward.Perimeter (D) can have the surface area more than interior zone (A) and the surface area sum of zone line (B) and (C).And, multiple dispensing orifices (331) can be defined in perimeter (D).For example, dispensing orifice (331) can be configured to the shape that the edge towards distribution plate radially spreads.Can lure that the gas being incorporated into perimeter (D) is downward into, make it towards external diffusion by the distribution of dispensing orifice simultaneously.And, the dispensing orifice (331) in perimeter (D) can have the density of the density less than the dispensing orifice (331) in the second zone line (C).Therefore, a large amount of gases brought out after colliding with interior zone (A) are provided by bringing out downwards.And, at the gas sprayed from gas ejector (300) by time between substrate support (510) and the inwall of internal chamber (200), gas can have the flow rate of the flow rate more than the gas in other region.Consequently, because dispensing orifice (331) has the relatively low density in the perimeter (D) of distribution plate (330), so the uneven air-flow caused by high flow rate can be restricted.
And, the relatively large I of the external diameter of the internal diameter of feed tube (420), the diameter of interior zone (A) and the first zone line (B) introduces condition according to gas and is adjusted.For example, interior zone (A) can have the diameter of the diameter equal to or more than feed tube (420) and flows directly down with the gas being entirely prevented from from feed tube (420) introduces.Or, the diameter of interior zone (A) is less than the diameter of feed tube (420), and the external diameter of the first zone line (B) can equal to or more than the diameter of feed tube (420) partly to prevent the gas introduced from feed tube (420) from flowing directly down.
And, the size of each in adjustable region.For example, when perimeter (D) has external diameter (100), second zone line (C) can have scope from (30) to the external diameter of (40), first zone line (B) can have scope from (18) to the external diameter of (22), and interior zone (A) can have the diameter that scope is from 6 to 8.Certainly, the big I of each in region introduces condition or air-flow according to gas and differently changes.
When introducing gases in gas ejector (300) (wherein controlling the layout of dispensing orifice), the gas distribution in gas ejector (300) can be controlled, and then gas can be ejected on substrate equably.That is, as illustrated in Figure 3, the flowing directly down of the gas introduced from feed tube (420) can be interrupted by the interior zone (A) of distribution plate (330), and gas can spread in a lateral direction, and it is then fed in the first supply space (340).Subsequently, gas may pass through dispensing orifice (331) (controlling described dispensing orifice in the distribution in each region), and is supplied in the second supply space (350), and therefore spreads equably.Then, gas can be ejected on substrate.
Hereinafter, substrate process operations be will be described below with reference to the accompanying drawings.Fig. 5 illustrates wherein according to the concept map of the technique of load substrates in the substrate-treating apparatus of one exemplary embodiment, and Fig. 6 illustrates wherein at the concept map according to the technique processing substrate in the substrate-treating apparatus of one exemplary embodiment.
In order to perform technique in substrate-treating apparatus, by opening (111) load substrates of chamber (100).For this, substrate support (510) and the second body (210) move down.Therefore, it is inserted into and the stripper pin (530) that is installed on the through hole of substrate support (510) also can move down.But, because stripper pin (530) has the length more than the thickness of substrate support (510) and the height of the second body (210), so when stripper pin (530) drops to a certain degree, stripper pin (530) can arrive the lower surface of chamber (100), and therefore can stop the decline of stripper pin (530).On the other hand, substrate support (510) and the second body (210) decline continuously, and stripper pin (530) can highlight from the top surface of substrate support (510), to form upper end at the At The Height spaced apart with its top surface.And, couple to produce betwixt gap by making the second body (210) decline to discharging between the first noumenon (220) with the second body (210).The part in gap connects with the opening (111) of chamber (100).Herein, the gate valve (900) of the opening (111) of Guan Bi chamber (100) is opened, by opening (111) load substrates (S), to be thus placed on the upper end of stripper pin (530) by substrate (S).It is to say, substrate (S) is supported by multiple stripper pins (530).
Thereafter, gate valve (900) is close to Guan Bi opening (111), and substrate support (510) and the second body (210) rise.By making substrate support (510) and the second body (210) rise, stripper pin (530) is inserted in substrate support (510), to reduce the gap between substrate (S) and substrate support (510).When substrate support (510) and the second body (210) rise continuously, whole stripper pin (530) is inserted in substrate support (510), and substrate (S) is placed on the top surface of substrate support (510).Herein, stripper pin (530) has upper end (its surface area is more than the surface area of its exterior section), and therefore hangs downwards the through hole through substrate support (510) in unseparated situation.The recessed groove of the upper end inserting stripper pin (530) can be defined in the top surface of substrate support (510).And, the first noumenon (220) and the second body (210) are by making the second body (210) rise and coupled to each other, and provide the second space of internal chamber (200) as insulating space.
After being loaded in internal chamber (200) by substrate (S), discharge the gas in chamber (100) and internal chamber (200) to control chamber (100) and internal chamber (200) according to wanted vacuum pressure.Then, adjust various state-variable, and distribute block (420) by gas and gas ejector (300) introduces gas to be processed, so that substrate (S) is performed various process technique.For example, can introduce for the place's process gases depositing thin film to deposit thin film on substrate (S).And, when performing technique encourage plasma to gas ejector (300) applying electric power.
As described above, provide internal chamber (200) to perform the gas aerofluxus to its underpart core individually in chamber (100).Herein, in order to be uniformly introduced gas, second space can have symmetrical structure and uniform environment.Because in second space, execution processes the technique of substrate (S), so substrate processing process can be performed equably.
Although exemplified with being used for performing the equipment of substrate processing process between the upper electrode and substrate support of face each other, but one exemplary embodiment is not limited to this.For example, one exemplary embodiment can be applied to the various method and apparatus with various structure.
As described above, although showing referring in particular to the preferred embodiments of the present invention and describing the present invention, but it will be understood by one of ordinary skill in the art that the multiple change that can carry out in form and details, and without departing from the spirit and scope of appended claims invention defined.Therefore, the scope of the present invention not detailed description by the present invention is limited, but is limited by appended claims, and all differences in scope is construed as being contained in the present invention.
Industrial usability
Semiconductor fabrication process, display fabrication process or the technique being used for manufacturing various electronic installation can will be applied to according to the substrate-treating apparatus of one exemplary embodiment.For example, substrate-treating apparatus may be used for the film making process for manufacturing quasiconductor and display.
Claims (15)
1. a substrate-treating apparatus, it is characterised in that including:
Chamber, has side, loads and unloads substrate by described side, have the first space in described chamber；
Internal chamber, is placed in described first space in described chamber, has second space in described internal chamber；
Substrate support, is placed in described internal chamber to support described substrate；And
Gas ejector, is placed in the top of described substrate support to be ejected into by gas on described substrate support,
Wherein said internal chamber includes:
The first noumenon, is fixed to the upper part in described chamber；
Second body, is placed on the low portion of described the first noumenon and is vertically movable, and described second body has the steam vent in the core of its lower surface；And
Aerofluxus body, is connected in described steam vent and described aerofluxus body and defines exhaust pathway.
2. substrate-treating apparatus according to claim 1, wherein said the first noumenon and described second body are coupled to each other to define the insulating space making described second space with described first spatial separation.
3. substrate-treating apparatus according to claim 1, wherein air vent is connected to the described core of the described lower surface of described chamber, and described aerofluxus body is placed in the inside of described air vent.
4. substrate-treating apparatus according to claim 3, wherein said aerofluxus body has and is defined in upper portion side wall with the first hole allowing described first space to connect with described exhaust pathway and the second hole being defined in lower sides to allow described exhaust pathway to connect with described air vent.
5. the substrate-treating apparatus according to claim 3 or 4, wherein said aerofluxus body has the hollow tubular structure vertically extended, and have the upper area being connected to described steam vent and have the diameter lower area less than the diameter of described upper area, and the 3rd aperture defines to extend perpendicularly through the lower surface of described upper area.
6. the substrate-treating apparatus according to claim 3 or 4, wherein said air vent is connected to external exhaust gas part on one side surface.
7. substrate-treating apparatus according to claim 1, wherein said gas ejector includes: towards described substrate support and the jet tray with multiple spray-hole；It is placed in above described jet tray and is connected to the upper board of feed tube；And be placed between described jet tray and described upper board and have described gas the distribution plate of multiple dispensing orifices of traverse.
8. substrate-treating apparatus according to claim 7, wherein said distribution plate includes: interior zone, does not define described dispensing orifice including in center and described interior zone；Zone line, is defined in the outside of described interior zone and described zone line and defines described dispensing orifice；And perimeter, the distance being defined in described in the outside of described zone line and described perimeter between dispensing orifice is gradually increased in the edge direction of described perimeter.
9. substrate-treating apparatus according to claim 7, wherein said distribution plate includes: interior zone, does not define described dispensing orifice including in center and described interior zone；Zone line, the distance being defined in described in the outside of described interior zone and described zone line between dispensing orifice changes according to the position of described dispensing orifice；And perimeter, it is defined in the outside of described zone line and described perimeter and defines the plurality of dispensing orifice.
10. substrate-treating apparatus according to claim 8 or claim 9, the surface area of wherein said perimeter is more than the surface area sum of described interior zone and described zone line.
11. substrate-treating apparatus according to claim 8 or claim 9, wherein said zone line includes: the first zone line, contacts in described interior zone and described first zone line and defines the plurality of dispensing orifice；And second zone line, contact in described perimeter and described second zone line and define described dispensing orifice with distance less than the distance between the described dispensing orifice being defined in described first zone line.
12. substrate-treating apparatus according to claim 11, in wherein said second zone line is the density density higher than the described dispensing orifice in described first zone line of the described dispensing orifice of the number of per unit area dispensing orifice.
13. substrate-treating apparatus according to claim 12, the density of the described dispensing orifice in wherein said perimeter is lower than the density of the described dispensing orifice in described second zone line.
14. substrate-treating apparatus according to claim 11, wherein in described perimeter, radially described dispensing orifice is determined on the boundary of a piece of land.
15. substrate-treating apparatus according to claim 11, the diameter of wherein said feed tube is more than the diameter of described interior zone and less than or equal to the external diameter of described first zone line.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130151693A KR101518398B1 (en) | 2013-12-06 | 2013-12-06 | Substrate process apparatus |
| KR10-2013-0151693 | 2013-12-06 | ||
| PCT/KR2013/012331 WO2015083884A1 (en) | 2013-12-06 | 2013-12-27 | Substrate processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105793959A true CN105793959A (en) | 2016-07-20 |
| CN105793959B CN105793959B (en) | 2019-03-26 |
Family
ID=53273617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380081398.XA Active CN105793959B (en) | 2013-12-06 | 2013-12-27 | Substrate-treating apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101518398B1 (en) |
| CN (1) | CN105793959B (en) |
| WO (1) | WO2015083884A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109881187A (en) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | A kind of vapor deposition chamber |
| CN110299309A (en) * | 2018-03-23 | 2019-10-01 | 三星电子株式会社 | Gas distributing device and substrate-treating apparatus including the gas distributing device |
| CN111261487A (en) * | 2018-12-03 | 2020-06-09 | 应用材料公司 | Electrostatic chuck design with improved chucking and arcing performance |
| CN112768334A (en) * | 2019-11-05 | 2021-05-07 | Psk有限公司 | Substrate processing apparatus |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108028175B (en) * | 2015-09-22 | 2019-06-28 | 应用材料公司 | Spray head support construction |
| KR101905640B1 (en) * | 2016-04-12 | 2018-10-10 | 피에스케이 주식회사 | Apparatus for treating substrate |
| CN110093593A (en) * | 2019-05-20 | 2019-08-06 | 北京捷造光电技术有限公司 | One kind being used for large area pecvd process chamber bilayer exhaust structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1861837A (en) * | 2005-05-12 | 2006-11-15 | 三星Sdi株式会社 | CVD device for deposit spathic silicon |
| TW200837867A (en) * | 2007-02-06 | 2008-09-16 | Sosul Co Ltd | Apparatus for forming a layer |
| US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| CN103035469A (en) * | 2011-10-05 | 2013-04-10 | 应用材料公司 | Symmetric plasma process chamber |
| US20130255576A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Process kit shield for plasma enhanced processing chamber |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL116156A0 (en) * | 1994-12-05 | 1996-01-31 | Hughes Aircraft Co | Cooled gas distribution system for a plasma |
| WO2001046498A2 (en) * | 1999-12-22 | 2001-06-28 | Aixtron Ag | Chemical vapor deposition reactor and process chamber for said reactor |
| KR100491241B1 (en) * | 2003-07-22 | 2005-05-25 | 주식회사 테라세미콘 | Single wafer type semiconductor manufacturing System for high temperature processes |
| KR101329570B1 (en) * | 2007-02-06 | 2013-11-22 | (주)소슬 | Apparatus for forming a layer |
-
2013
- 2013-12-06 KR KR1020130151693A patent/KR101518398B1/en active IP Right Grant
- 2013-12-27 WO PCT/KR2013/012331 patent/WO2015083884A1/en active Application Filing
- 2013-12-27 CN CN201380081398.XA patent/CN105793959B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1861837A (en) * | 2005-05-12 | 2006-11-15 | 三星Sdi株式会社 | CVD device for deposit spathic silicon |
| TW200837867A (en) * | 2007-02-06 | 2008-09-16 | Sosul Co Ltd | Apparatus for forming a layer |
| US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| CN103035469A (en) * | 2011-10-05 | 2013-04-10 | 应用材料公司 | Symmetric plasma process chamber |
| US20130255576A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Process kit shield for plasma enhanced processing chamber |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299309A (en) * | 2018-03-23 | 2019-10-01 | 三星电子株式会社 | Gas distributing device and substrate-treating apparatus including the gas distributing device |
| CN111261487A (en) * | 2018-12-03 | 2020-06-09 | 应用材料公司 | Electrostatic chuck design with improved chucking and arcing performance |
| US11682574B2 (en) | 2018-12-03 | 2023-06-20 | Applied Materials, Inc. | Electrostatic chuck design with improved chucking and arcing performance |
| CN109881187A (en) * | 2019-03-06 | 2019-06-14 | 北京捷造光电技术有限公司 | A kind of vapor deposition chamber |
| CN112768334A (en) * | 2019-11-05 | 2021-05-07 | Psk有限公司 | Substrate processing apparatus |
| CN112768334B (en) * | 2019-11-05 | 2024-05-07 | Psk有限公司 | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015083884A1 (en) | 2015-06-11 |
| KR101518398B1 (en) | 2015-05-08 |
| CN105793959B (en) | 2019-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105793959A (en) | Substrate processing apparatus | |
| TWI662640B (en) | Gas supply unit and substrate processing apparatus including the gas supply unit | |
| TWI615501B (en) | Gas flow control device, showerhead assembly, and semiconductor manufacturing apparatus | |
| US10190214B2 (en) | Deposition apparatus and deposition system having the same | |
| US9741575B2 (en) | CVD apparatus with gas delivery ring | |
| CN107452590A (en) | For the adjustable side air chamber that edge etch rate controls in downstream reactor | |
| KR20150056631A (en) | Chemical control features in wafer process equipment | |
| KR102350588B1 (en) | Film forming apparatus having injector | |
| US10780447B2 (en) | Apparatus for controlling temperature uniformity of a showerhead | |
| KR20160016652A (en) | Plasma processing apparatus and gas supply member | |
| TW201544637A (en) | Symmetric chamber body design architecture to address variable process volume with improved flow uniformity/gas conductance | |
| KR20180072551A (en) | Gas treatment apparatus and gas treatment method | |
| KR101538461B1 (en) | Substrate process apparatus | |
| CN100517560C (en) | Gas injection device | |
| CN101179022A (en) | Gas injection apparatus | |
| CN101978471B (en) | Substrate processing apparatus and method | |
| CN110249073A (en) | Diffuser design for flowable CVD | |
| KR102132295B1 (en) | Gas distributing plate, and reaction chamber including the same, and apparatus treating substrate including the same | |
| KR20070002218A (en) | Chemical vapor deposition apparatus | |
| KR101935881B1 (en) | Treatment apparatus for large area substrate, Gas supplying apparatus for large area substrate and Showerhead support unit | |
| KR101606198B1 (en) | Substrate process apparatus | |
| CN101623680A (en) | Air inlet device and semiconductor processing equipment using same | |
| KR101375621B1 (en) | Manufacturing Apparatus For Semiconductor Device | |
| JP2001196318A (en) | Semiconductor treating method and equipment | |
| US20070045239A1 (en) | Apparatus and method for processing a microfeature workpiece using a plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |