200837867 ^ / X IKJ pii 九、發明說明： 【相關申請案交叉參考】 本申請案根據35 USC § 119主張優先於2007年2月6 曰於韓國智慧財產局（Korean Intellectual Property Office ; KIPO)提出申請之韓國專利申請案第2007-11956號、第 2007_11964 號、第 2007-11968 號以及第 2007-11971 號， 該等韓國專利申請案之内容皆全文倂入本案供參考。200837867 ^ / X IKJ pii IX. Invention Description: [Cross-Reference to Related Applications] This application is based on 35 USC § 119 and is filed on February 6, 2007 in the Korean Intellectual Property Office (KIPO). The Korean Patent Application Nos. 2007-11956, 2007_11964, 2007-11968, and 2007-11971, the entire contents of each of which are incorporated herein by reference.
【發明所屬之技術領域】 本發明之典型實施例是關於一種用於形成物質層之裝 置。更具體而言，本發明之典型實施例是關於一種用於在 半導體基板上形成諸如身^氟化合物層等物 質層之裝置。 【先前技術】 目萠 _千㈣請變得日益高度積體化，半導體 正比地加快。然而，半導體器件之高 度積體化要求i屬線間具有f之間距。此可 訊號傳輸中造成延時。訊號延時可由％ ' “ 以及金屬線之高f阻造成。“挪料之寄生電容 為解決訊號延時，需要減小絕緣芦 金屬線之電阻。因此，人們正在廣泛;目對介電常數或 電阻以及絕緣層相對介電當备夕古 於卩+低金屬線 方法，金屬線利用銅，且絕=碳二目，提出之 銅之導電率低於鋁。此外， +灭虱化合物。 (—ga她y)。因此，銅;^目對高之電負性 鼠了减小例如氧化矽層 7 200837867 A / JL 丄 寺、、、巴緣層之相對介電常數。然而，絕緣層之熱穩定性可隨 氟^夏之增加而降低。為克服上述問題，可於絕緣層中添 加厌以及氟。此處，由於在交聯比（cross-linking ratio)增 大％石厌具有良好之熱穩定性，因而藉由適當調整氟對碳之 • 添加比’可使絕緣層具有熱穩定性及低的相對介電常數。 - 可利用電漿強化化學蒸氣沉積（plasma-enhanced ChemiCal VaP〇r deposition ; PECVD)裝置於半導體基板上 _ 形^具有上述特性之非晶碳層。PECVD裝置之一實例揭露 於韓國專利特許公開案第2003-41844號中。 習知PECVD裝置可包含室、分隔部件、反應氣體提 供部件、卡盤以及絕緣部件。此室具有内部空間，用於在 其中加載半導體基板。分隔部件設置於此室中，用於將内 部空間分隔成反應區及非反應區。反應氣體提供部件置於 分隔部件上方，用於向反應區提供反應氣體。卡盤設置於 分隔部件之底面上。此外，於卡盤中建置加熱器。於室之 上表面形成用於向室内引入反應氣體之入口以及用於排放 Φ 副產物之出口。絕緣部件具有固定槽。分隔部件具有嵌入 — 固定槽内之凸起。此處，固定槽之寬度略大於凸起之寬度。 • 半導體基板置於卡盤上。由反應氣體提供部件所提供 之反應氣體產生之電漿被應用於半導體基板，以於半導體 基板上形成物質層，例如非晶碳層、非晶碳氟化合物層等。 於習知PECVD裝置中，加熱器置於分隔部件上。亦 即，加熱器直接接觸分隔部件。因此，加熱器所產生之大 里熱夏可透過分隔部件而傳遞至非反應區，從而使加熱器 8 200837867 j熱損失。加熱器之熱損失可對應於用 Π二=半導體器件上形成具有 二二卜長於+導體器件上形成具有所期望特性二 此外’於習知pecvd 體提供部件與加熱器間之間距。亦即，4 =制反應氣 熱器上之^導體基板與反應氣體提供部件間=調整力J3 故，無法選擇半導體基板與反應氣體提供部=。是 而此間距是用於形成具有最程^間距’ 置可二：之A表面：成出口。此處，出口之位 I升貝貝問碭，只要室中之壓力保持 γ然而’#室中產生⑷騎，室中壓力可升高 ㈣吏重力可作用於室之内部。因此，重力可：= 用，對半導體器件之運作具有致命田影響打起到微粒的作 體形2二短反應氣體之運動路徑時，可抑止反應氣 y 而要的之物質層。然而，於習知PECVD穿置中， =成：室上表面之中央部，出口則形成於室：表面之 目此’反應氣體可經由半導體基板自入口至出口 /瓜、^ 乂長之路徑。此較長之路徑可導致在位於此長路徑中 之ECVD裝置元件上形成不需要的之物質層。故而，可 9 200837867 能需要對室進行長時間之清潔。 而且，當反應區打開時，由於分隔部件或絕緣部件略 微移動，因而凸起可能無法精確地嵌入固定槽中，從而使 凸起可頻繁地碰撞絕緣部件。分隔部件與絕緣部件間之碰 撞可局部地損壞分隔部件及/或絕緣部件。此外，分隔部件 與絕緣部件間之碰撞所產生之微粒可起到微粒之作用，對 半導體器件之運作具有致命影響。TECHNICAL FIELD OF THE INVENTION An exemplary embodiment of the present invention relates to an apparatus for forming a layer of matter. More specifically, an exemplary embodiment of the present invention relates to an apparatus for forming a substance layer such as a fluorine compound layer on a semiconductor substrate. [Prior Art] 萠 千 (4) Please become increasingly highly integrated, and semiconductors are accelerating. However, the high degree of integration of semiconductor devices requires that i lines have a distance between f. This can cause delays in signal transmission. The signal delay can be caused by % ' " and the high f resistance of the metal wire. "The parasitic capacitance of the material is to reduce the resistance of the insulated metal wire in order to solve the signal delay. Therefore, people are widely; aiming at the dielectric constant or resistance and the relative dielectric of the insulating layer, when the metal wire is made of copper and the carbon wire is used, the copper conductivity is low. In aluminum. In addition, + cockroach compounds. (—ga she y). Therefore, the relative dielectric constant of the copper layer is reduced by, for example, the high electronegativity of the yttrium oxide layer 7 200837867 A / JL. However, the thermal stability of the insulating layer can be lowered as the fluorine is increased. To overcome the above problems, anaesthesia and fluorine can be added to the insulating layer. Here, since the cross-linking ratio is increased by %, the stone has a good thermal stability, and thus the insulating layer is thermally stable and low by appropriately adjusting the fluorine-to-carbon addition ratio. Relative permittivity. - An amorphous carbon layer having the above characteristics can be formed on a semiconductor substrate by a plasma-enhanced ChemiCal VaP〇r deposition (PECVD) apparatus. An example of a PECVD apparatus is disclosed in Korean Patent Laid-Open Publication No. 2003-41844. Conventional PECVD apparatus can include a chamber, a partition member, a reactive gas supply member, a chuck, and an insulating member. This chamber has an internal space for loading a semiconductor substrate therein. A partition member is provided in the chamber for separating the inner space into a reaction zone and a non-reaction zone. A reaction gas supply member is placed above the partition member for supplying a reaction gas to the reaction zone. The chuck is placed on the bottom surface of the partition member. In addition, a heater is built in the chuck. An inlet for introducing a reaction gas into the chamber and an outlet for discharging Φ by-products are formed on the upper surface of the chamber. The insulating member has a fixing groove. The partition member has a projection that is embedded in the fixing groove. Here, the width of the fixing groove is slightly larger than the width of the protrusion. • The semiconductor substrate is placed on the chuck. The plasma generated by the reaction gas supplied from the reaction gas supply member is applied to the semiconductor substrate to form a substance layer such as an amorphous carbon layer, an amorphous fluorocarbon layer or the like on the semiconductor substrate. In a conventional PECVD apparatus, a heater is placed on a partition member. That is, the heater directly contacts the partition member. Therefore, the heat generated by the heater can be transmitted to the non-reaction zone through the partition member, so that the heater 8 200837867 j is thermally lost. The heat loss of the heater may correspond to the distance between the heater and the heater provided by the conventionally formed pecvd body formed by the formation of the device having the second and second conductors on the semiconductor device having the desired characteristics. That is, 4 = between the conductor substrate on the reaction gas heater and the reaction gas supply member = the adjustment force J3, the semiconductor substrate and the reaction gas supply portion = cannot be selected. Yes, and this spacing is used to form the A surface with the most square spacing: Here, the position of the exit I 贝 Beibei asks, as long as the pressure in the chamber remains γ, but the (4) ride occurs in the room, the pressure in the chamber can be increased. (4) The gravity can act on the inside of the chamber. Therefore, gravity can be used as a material layer that suppresses the reaction gas y when it has a deadly effect on the operation of the semiconductor device and acts as a moving path of the particles. However, in conventional PECVD insertion, = is the central portion of the upper surface of the chamber, and the outlet is formed in the chamber: the surface of the reaction gas can pass through the semiconductor substrate from the inlet to the outlet / melon, the length of the path. This longer path can result in the formation of an undesired layer of material on the ECVD device components located in this long path. Therefore, 9 200837867 can be used to clean the room for a long time. Moreover, when the reaction zone is opened, since the partition member or the insulating member is slightly moved, the projection may not be accurately inserted into the fixing groove, so that the projection may frequently collide with the insulating member. The collision between the partition member and the insulating member can locally damage the partition member and/or the insulating member. In addition, the particles generated by the collision between the partition member and the insulating member act as particles and have a fatal effect on the operation of the semiconductor device.
即便可將凸起精確地嵌入固定槽中，亦可能吸收當分 隔部件與絕緣部件相互接觸時所產生之衝擊。此種衝擊會 使分隔部件及/或絕緣部件產生微粒。 而且，分隔部件可為僅具有一個元件之單體結構。因 而’當分隔部件、尤歧分隔部件巾與絕緣部件相結 ，分遭到局部破壞時，可能需要整個地更換一個新的分隔 【發明内容】 置 隙 置 置 ί發明之典型實施例提供—翻於形成物質層之梦 ’能夠視需要輕加熱！I與反應氣體提供部件^ ，亚且使加熱器之熱損失最小。 曰] ，典型實施例亦提供一種用於形成物質層之裝 ，…、有能夠抑止對副產物之吸收之排放&構。、 ，=之典型實施例還提供一種用於形：物質層之裝 八此夠吸收分卩帛部件魏緣部仙之細衝擊 防止分隔部件與絕緣部件間發生碰撞。 冋吩 本發明之典型實施例尚提供一種用於形成物質層之裝 10 200837867 L· / 1 置，其能夠即使在分隔部件遭到局部損壞時亦僅更 部分。 谓 根據本發明之-態樣，_種用於形成物質層之裝置包 含至、/刀^部件、支撐部件、反應氣體提供部件以及絕緣 部件。此至具有用以裝载基板之内部空間。分隔部件、' 於此至之内部空間中，用於將内部空間分隔成用於容域 板之反應區與非反應區。支撐部件置於反應區中，用以^ 撐基板。反應氣體提供部件放置於支撐部件上，用以 應區提供反應氣體。此絕緣部件可卸下地與分隔部件相处 合，以使反應區與非反應區相互隔離。 〜 根據本發明之-典型實施例，此室可具有人 口此入口可貝牙至之上表面而形成並可與反應區連 反應氣體可經其流至反應區，此出口可貫穿室之下表， 形成並可連通非反應區，副產物可經其自非反應區出而 出口可形成於室下表面之中央部。與反應區連通之—姐 放通道可軸於支料件與分隔部件之間。分隔部件星 有固定部，用財其幅人支撐部件之提雜。固定; 具有與第一排放通道連通之第二排放通道。此外，二 件可具有環繞支料件之提升軸之支撐部，以向上 部件。支#部可具有連接於第二通道與出 = 放通道。 弟二排 根據本發明之另一典型實施例，分隔部件可具 接觸絕緣部件下表面之耻凸起。絕緣部件可具有穷二 觸分隔部件上表面之朝下凸起。朝上凸起與朝下凸起ς彼Even if the projection can be accurately embedded in the fixing groove, it is possible to absorb the impact generated when the partition member and the insulating member are in contact with each other. Such an impact causes particles to be formed in the partition member and/or the insulating member. Moreover, the partition member may be a unitary structure having only one element. Therefore, when the partition member and the partition member are in contact with the insulating member and are partially damaged, it may be necessary to replace a new one as a whole. SUMMARY OF THE INVENTION The exemplary embodiment of the invention provides The dream of forming a material layer can be heated as needed! I and the reaction gas supply part ^, and minimize the heat loss of the heater.典型], the exemplary embodiment also provides a device for forming a material layer, ... having a discharge & structure capable of suppressing absorption of by-products. The exemplary embodiment of the invention also provides a shape for the material layer to absorb the fine impact of the weir portion of the branching member to prevent collision between the partition member and the insulating member.冋 本 典型 本 本 本 本 本 本 本 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 According to the aspect of the invention, the apparatus for forming a material layer includes a member, a member, a support member, a reaction gas supply member, and an insulating member. This has an internal space for loading the substrate. The partition member, in this interior space, is used to separate the internal space into a reaction zone and a non-reaction zone for the containment panel. A support member is placed in the reaction zone for supporting the substrate. The reaction gas supply member is placed on the support member to provide a reaction gas in the region. The insulating member is detachably engaged with the partition member to isolate the reaction zone from the non-reaction zone. ~ According to an exemplary embodiment of the present invention, the chamber may have a population which may be formed by the entrance to the upper surface and may be coupled to the reaction zone through which the reactive gas may flow to the reaction zone. Forming and communicating with the non-reaction zone, by-products can be formed from the non-reaction zone and the outlet can be formed at the central portion of the lower surface of the chamber. The communication channel is connected to the reaction zone between the support member and the partition member. The partition member star has a fixed portion, which is used for the support of the support member. Fixed; having a second discharge passage in communication with the first discharge passage. In addition, the two pieces may have a support portion that surrounds the lift shaft of the support member to the upper member. The branch # can have a connection to the second channel and the outlet channel. Second Row According to another exemplary embodiment of the present invention, the partition member may have a wavy projection that contacts the lower surface of the insulating member. The insulating member may have a downwardly convex surface of the upper surface of the poor contact separation member. Raising upwards and downwards
II 200837867 ^ i ltojjif 此間隔開，以於分隔部件與絕緣部件間形成緩衝空間。此 裝置可更包含彈性部件，彈性部件用於吸收在絕緣部件與 分隔部件相互組裝於-起時所產生之衝擊。彈性部件可放 置於朝上凸起與朝下凸起之間。或者，彈性部件可田比鄰朝 上凸起而内建於分隔部件中或田比鄰朝下凸起而内建於絕緣 部件中。 根據本舍明之又-典型實施例，分隔部件可包含本體 部、以及可卸下地與本體部上端相結合之結合部。此外， 衣置可包含益封。[5 ’其放置於分隔部件之結 部件之間。 根據本發明之再-典型實施例，此裝置可更包含用於 =應！壓力之第一壓力控制器、以及用於控制非反應 £壓力之第二壓力控制器。 根據本發明之尚-實施例，此裝置可更包含提升銷、 、黑敝部件及止擋件。提升銷可活動地插人於垂直貫穿支撐 成之第—提料勒，以提起基板。遮蔽部件可 ^動人於垂直貫穿支撐部件所形成之第二提升通道 上报丄、敝ΐ件可覆蓋基板之邊緣部’以防止於基板邊緣部 升“及層。止擋件可設置於反應區中，以限制提 升銷及$敝部件之最下位置。 之上=痒提升鎖可具有頭部，其寬度大於第-提升通道 碌、J二ΐ敝部件可包含用於覆蓋基板邊緣部之遮蔽 道内之提弁下表面伸出並活動地插入於第二提升通 叙升杯。提升桿之長度可大於提升鎖之長度。止擋 12 200837867 2 / 146plf 件可具有穿過分隔部件固定於室之固定桿。 根據本發明之再_典型實施例，此 r:r-提升單元、一於提升‘= • 轉本發明之又-典型實施例，此|置可更包人 •於支撐部財之加絲，以X加減板。 3建置 =本發明，分隔部件可與具有加熱器之支撐部件相 鲁 間M，以便可抑止熱量從加熱器傳遞至分隔部件。如 此，可抑止加熱器透過非反應區損失熱量。此外， 藉由提升單元提起分隔部件及支撐部件，因根严^ 險之基板與反應氣體= 2^ 口形成於室之下表®® 使在至中產生浅漏，亦可使副產物藉由重力而向下運 因此，副產物不會黏附於基板上及/或室之内壁上 ，’出Π可形成於室下表面之中央部，以使藉由入口弓 = i内之反應氣體可流經最短之路徑並可藉由出π排出 罾Λ，不會於此雜中之元件上形成㈣產物所造成之不兩 _ *的層。此外，由於可於分隔部件之上部凸起 * 之朝下凸起間形成缓衝空間，因而分隔部件與絕緣部件不 會相互碰撞。此外，由於可於分隔部件及/或絕緣部二上接 f彈性部件’因而可吸收分隔部件與絕緣部件間之接觸衝 4。如此-來，使分隔部件及絕緣部件不會受到 足 而不會產生會對半導體製程產生不利影響之微粒。、況/ 由於分隔部件可包含二部分，例如本體部及結合部/ 13 200837867 IHOpif I僅更換麵繁產生損壞之結合部。因此，無需更換整個 7刀隔部件，進而降低裝置運轉的成本。 【實施方式】 下文將參照顯示本發明實施例之附圖更全面地 • 本發明亦可實施綠不_式，而不應 L視為僅限於本文所述之實施例。而是，提供該等實施例 曰在使本揭露内容透徹及完整，並向熟習此項技術者全面 • ^達本發明之範圍。在附圖中，為清楚起見，可故意誇大 α個層及區域之尺寸及相對尺寸。 「、應理解，當稱—元件或層位於另—元件或層「上」或 連接」或「耦接」至另一元件或層時，其既可直接位於 另元件或層上或直接連接或耦接至另一元件或層，亦可 存在中間元件或層。相比之下，當稱一元件「直接」位於 另件或層「上」或「直接連接」或「直接耦接」至另 ” ^件或層B守，則不存在中間元件或層。通篇中，相同編 號皆指代相同元件。本文中所用措詞「及/或」包含相關羅 歹J項中一或多者之任一及所有組合。 — 應理解，儘管本文可使用「第一」、「第二」等措 ^ 詞來呪明各種元件、組件、區域、層及/或區段，然而該等 ^件、組件、區域、層及/或區段不應受限於該等措詞。該 等措詞僅用於使各元件、組件、區域、層及/或區段相互區 另J因此，可將下文所述第一元件、組件、區域、層及/ 或區段稱為第二元件、組件、區域、層及/或區段，此並不 脫離本發明之教示内容。 14 200837867 ^/I^6pil 為易於說明起見，本文可使用例如「在··下方、「 下面」、「下部」、「在…上方」、「上部」等上附孤· 眭用浯來描述附圖中所示一個元件或特徵相對於另_ (其 件或特徵之_。應理解，空間相對性用語^在除 口 坏不取向外，亦囊括裝置在使用或運作中之不同取 ί徵，:大若圖中之裝置翻轉，則被描述處於其他:件或 或特徵「tl或「下面」之元件將隨後變為處於其他元件 方及下士」。因此，典型用語「下方」可同時囊括上 向），因而If可呈其他取向（旋轉9G度或處於其他取 ^因而應相應地解釋本文所用之空間相對性描述狂。 上下文明確指明外’本文中所用單數形式「一 步二==、該（the)」旨在亦包括複數形式。進一 是文所用措詞「包括（inciudes及/或―g)」 3 ^ ”存在或增加—或多個其他特徵、整數、 驟;^作、元件m或其群組之存在。 及科學:語卜有所有術語(包括技術術語 者所共知之含意。進-㊃理領域中具有通常知識 各術語(例如在常用字血;所t，差除在本文中明確指明外， 與在相關技術背景中相義之術語）應被認為具有 化或過於正式之意義。3忍’而不應被視為具有理想 應座實施例1 15 200837867 層之==::據本發明第一典型實施例用於形成物質 2曰0例-、图ι° : ’其中支撐部件及分隔部件被抬起。圖 圖1 ::丨：图;不裝置之剖視圖，其中支撐部件已降下； :件:二同气示裝置之剖視圖，其中支撐部件及分隔 “ θ/|_ ’圖4是例示圖1所示分隔部件之放大剖視圖； 二1示圖1所示第「V」部分之放大剖視圖；圖6是 列:圖J:斤示第「VI」部分之放大剖視圖；圖伽^II 200837867 ^ i ltojjif This is spaced apart to create a buffer space between the partition and the insulating part. The device may further comprise an elastic member for absorbing an impact generated when the insulating member and the partition member are assembled to each other. The elastic member can be placed between the upwardly convex and downwardly convex projections. Alternatively, the elastic member may be raised in the vicinity of the partition member or built in the partition member or protruded downward in the field to be built in the insulating member. According to still another exemplary embodiment of the present invention, the partition member may include a body portion and a joint detachably coupled to the upper end of the body portion. In addition, the clothes can contain benefits. [5 ‘ is placed between the knot parts of the partition. According to a further exemplary embodiment of the invention, the device may further comprise = should! A first pressure controller for pressure and a second pressure controller for controlling non-reactive £ pressure. According to still another embodiment of the present invention, the apparatus may further include a lift pin, a black box member, and a stopper. The lifting pin is movably inserted into the vertical through support to lift the substrate to lift the substrate. The shielding member can be moved on the second lifting passage formed vertically through the supporting member, and the edge member can cover the edge portion of the substrate to prevent the edge portion of the substrate from rising and the layer. The stopper can be disposed in the reaction zone. To limit the lowermost position of the lifting pin and the 敝 component. The upper = itch lifting lock may have a head having a width greater than the first-lifting channel, and the J-twin component may include a shielding channel for covering the edge portion of the substrate The lower surface of the ridge is extended and movably inserted into the second lifting and lifting cup. The length of the lifting rod can be greater than the length of the lifting lock. The stop 12 200837867 2 / 146plf can have a fixing fixed to the chamber through the partition member. According to the re-exemplary embodiment of the present invention, the r:r-lifting unit, one for lifting, and the other embodiment of the present invention, this can be more inclusive. Wire, X plus or minus plate. 3 Construction = The present invention, the partition member can be connected with the support member having the heater M, so as to suppress heat transfer from the heater to the partition member. Thus, the heater can be prevented from passing through the non-reaction Zone loss of heat In addition, by lifting the partitioning member and the supporting member by the lifting unit, the substrate and the reaction gas = 2^ are formed under the chamber to form a shallow leak in the middle, and the by-product can be borrowed. By gravity, the product is not adhered to the substrate and/or the inner wall of the chamber. The exit pupil can be formed at the central portion of the lower surface of the chamber so that the reaction gas in the inlet bow = i can be Flowing through the shortest path and discharging the crucible by π, does not form a layer of the (4) product caused by the product on the interfering component. Further, since it can be raised on the upper part of the partition member* A buffer space is formed between the downward projections, so that the partition member and the insulating member do not collide with each other. Further, since the elastic member can be attached to the partition member and/or the insulating portion, the partition member and the insulating member can be absorbed. Contact punch 4. In this way, the partition member and the insulating member are not subjected to the foot without generating particles which adversely affect the semiconductor process. Moreover, since the partition member may include two parts, such as the body portion and the joint portion / 13 200837867 IHOp If I only replaces the joint where the surface is damaged, so that it is not necessary to replace the entire 7-piece spacer, thereby reducing the cost of the operation of the apparatus. [Embodiment] Hereinafter, the present invention will be more fully described with reference to the drawings showing embodiments of the present invention. It is also possible to implement a green type, and it is not intended to be limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully accessible to those skilled in the art. The scope of the invention is shown in the accompanying drawings in which the dimensions and relative dimensions of the alpha layers and regions may be deliberately exaggerated. "It should be understood that when the component or layer is located on another component or layer" When it is "connected" or "coupled" to another element or layer, it can be directly attached to another element or layer or directly connected or coupled to another element or layer, or an intermediate element or layer. In contrast, when a component is referred to as being "directly" or "directly connected" or "directly coupled" to another component or layer B, there is no intermediate component or layer. In the text, the same reference numerals refer to the same elements. The phrase "and/or" used herein includes any and all combinations of one or more of the related items. — It should be understood that, although the terms "first", "second", and the like may be used to identify various elements, components, regions, layers and/or sections, the components, components, regions, layers and / or sections should not be limited by these terms. The wordings are used to distinguish elements, components, regions, layers, and/or sections from each other. Therefore, the first element, component, region, layer, and/or section described below may be referred to as a second. The elements, components, regions, layers, and/or sections are not departing from the teachings of the present invention. 14 200837867 ^/I^6pil For the sake of easy explanation, this article can be used to describe, for example, "under", "below", "lower", "above", "upper", etc. One element or feature shown in the drawings is relative to another one. It should be understood that the spatially relative terminology ^ also includes the difference in the use or operation of the device. ,: If the device in the figure is flipped, it will be described as other: the component or the feature "tl or "below" will later become the other component and the corporal." Therefore, the typical term "below" can be included at the same time. Up), and thus If can be in other orientations (rotating 9G degrees or in other ways) should accordingly explain the spatial relativity used in this article. The context clearly indicates that the singular form used in this article is "one step two ==, the (the) is intended to include plural forms. The wording "includes (inciudes and / or "g)" 3 ^ " exists or increases" or a number of other features, integers, and steps; Or the existence of its group. Learning: There are all terms in the language (including the meaning of the technical terminology. There are common knowledge terms in the field of advance-fourth theory (for example, in the commonly used word blood; t, the difference is clearly specified in this article, related to The terminology in the technical context should be considered to have a meaning of being too formal or too formal. 3 should not be considered as having an ideal embodiment 1 15 200837867 layer ==:: according to the first exemplary embodiment of the invention For the formation of a substance 2 曰 0 cases -, Figure ι ° : 'where the support member and the partition member are lifted. Figure 1: :: 丨: Figure; cross-sectional view of the device, where the support member has been lowered; : piece: two A cross-sectional view of the gas display device, wherein the support member and the partition "θ/|_' are shown in an enlarged cross-sectional view showing the partition member shown in Fig. 1; Fig. 6 is an enlarged cross-sectional view showing a portion "V" shown in Fig. 1; Column: Figure J: enlarged cross-sectional view of the "VI" part of the pin;
不弟VII」部分之放大剖視圖；圖8是例示圖i所示 遮敝部件之放大剖視圖。 苓見圖1，根據此典型實施例用於形成物質層之裝置 7包含室m、續料12G、分隔料⑽、反應氣體 提，部件14G、絕緣料15G、f —提升單元⑽、第二提 升單元162、止擋件17〇、遮蔽部件18〇以及射頻（瓜出〇 frequency ·· RF)電源 195。 至11〇與盍ill相組合形成内部空間，以在其中裝載 半導體基板。在蓋m之上表面形成入口 116，用以向内 部空間中引入反應氣體。於此典型實施例中，於室no之 下表面形成出口 118 ,用於排放副產物。此處，由於出口 118設置於室no之下表面上，因而在下文中所示反應區 中所產生之副產物可容易經出口 n8排放至反應區ι12 之外側。因而，副產物不會落至半導體基板上，從而不會 於半導體基板上形成瑕疵。於此典型實施例中，物質層之 貝例可包含非晶碳層、非晶碳氟化合物層等等。然而，利 用衣置100之半導體基板上之物質層之種類可並非僅限於 16 200837867 ^/ι^-δριι 上述層。 支撐部件12G設置於室11G中，_支撐半導體 加熱器m建置於支撐部件120中，用於加^導體 ^此典型實施例中，加熱器121之實例可包含加熱盤土管。。 提升軸122連接至支撐部们20之下表面之中央 — 提升單元160裝設於提升軸122之下 担二罘— 122。於此典型實施例中，第一提 ^ ^升提升轴 仏導螺桿咖心—等等^升早凡⑽可包含氣壓 參見圖1及圖6’三個第一提升通道124及三 提升通道以垂直貫穿切部件⑽而形成·2=— 道124設置於支撐部件12〇中 咏 棱升通 設置於支卿2。之邊緣:中 2制128,動地插人第—提升通道124 ♦。 里貫施例中’第-提升通道124可 ^ 各此提升_可包含頭部129，頭部二;因而， 提升通道m之漏斗狀上端之支撐形狀，、有衣在弟一 之邊，_卩件⑽_導體基板 層。遮蔽部件⑽包 蔽環m覆蓋半導體基板及桿184。遮 繇if 18? 緣邛棱升桿184連接至遮 了固疋至遮蔽環182之下表面。此處，為防止裝載^反應. 17 200837867 Z/i45pif 區112中之半導體基板干擾提升桿m，可將各提升桿ι84 以貫質相同之間距設置。舉例而言，此三個提升桿i84中 =^提2之設置間距可大於半導體基板之寬度。於此 ^貝_ +，提升桿184之長度可大於提升銷,128之長 度。 參—見圖1及圖4,分隔部件13〇將室11〇之内部空間 Z分割成反應區112及非反應區114。支樓部件120位於 ^應區m β。此外’分隔部件13〇與支樓部们％相互 間隔開。亦即’分隔部件13G不直接接觸支撐部件12〇之 =及底面。因此’可顯著減少從讀部件m透過分隔 傳遞至非反應區114之熱量。於此典型實施例中， :P:二件130 ▽具有碗形狀’架構成與支撐部件η。之側 面及底面間隔開。此外，分隔部件陳 ， 支標部㈣〇之提升軸122可活動地“固定 再-人參見圖1 ’第二提升單元162連接至固定部⑶， 轉起分隔部件m。因此，由於第二提升單元162提起 :刀隔部件且第—提升單元16G_切部件⑽，故分隔 ^牛⑽與支標部件⑽是被分別提起。如此，可根據最 佳W程條件，利用第一提升單元16〇而 庫巧 體提供部件140與支撐部件12〇門夕办以田D周正反應耽 /、又存砰仵12ϋ間之空隙。於此典型實施 列中，第-提升單it 160與第二提升單元162可包含氣壓 缸、用於將氣壓㈣力傳遞至固定部131之齒輪箱等等。 止擋件170水平設置於反應區112 π。止播件17〇且 有固定桿172,固定桿172穿過分隔部件13㈣定於室ιι〇 18 200837867 Ζ/1ΗδρΐΙ 上。於此典型實施例中，固定桿172可卸下地與止擋件 之下表面相結合或固定至止擋件170之下表面。止擋件口0 限制遮蔽部件180及提升銷128之最下位置。於此"典型實 施例中，止擋件170可具有環形狀。 ^ ^ 反應氣體提供部件140置於支撐部件12〇上。Fig. 8 is an enlarged cross-sectional view showing the concealing member shown in Fig. i. Referring to Figure 1, a device 7 for forming a material layer according to this exemplary embodiment comprises a chamber m, a refill 12G, a separator (10), a reaction gas lift, a component 14G, an insulating material 15G, a - a lifting unit (10), a second lift The unit 162, the stopper 17 〇, the shielding member 18 〇, and the radio frequency (frequency) RF power supply 195. The 11 〇 and 盍 ill are combined to form an internal space in which the semiconductor substrate is loaded. An inlet 116 is formed on the upper surface of the cover m for introducing a reaction gas into the inner space. In the exemplary embodiment, an outlet 118 is formed on the lower surface of the chamber no for discharging by-products. Here, since the outlet 118 is disposed on the lower surface of the chamber no, by-products generated in the reaction zone shown hereinafter can be easily discharged to the outside of the reaction zone ι12 via the outlet n8. Therefore, the by-product does not fall onto the semiconductor substrate, so that germanium is not formed on the semiconductor substrate. In this exemplary embodiment, the shell of the substance layer may include an amorphous carbon layer, an amorphous fluorocarbon layer, or the like. However, the type of the substance layer on the semiconductor substrate using the clothing 100 may not be limited to the above layer of 16 200837867 ^/ι^-δριι. The support member 12G is disposed in the chamber 11G, and the support semiconductor heater m is built in the support member 120 for applying a conductor. In the exemplary embodiment, an example of the heater 121 may include a heated earth pipe. . The lift shaft 122 is coupled to the center of the lower surface of the support portion 20 - the lift unit 160 is mounted below the lift shaft 122. In the exemplary embodiment, the first lifting lift shaft guide screw coffee core - etc. ^ 升 早 (10) may include air pressure, see Figure 1 and Figure 6 three first lifting passage 124 and three lifting passages Vertically penetrating the cutting member (10) to form a 2=-way 124 is disposed in the support member 12A and is provided in the support member 2. The edge: the middle 2 system 128, the moving insert - the lifting channel 124 ♦. In the embodiment, the 'first-lifting channel 124 can be increased _ can include the head 129, the head two; thus, the supporting shape of the funnel-shaped upper end of the lifting channel m, and the clothing is on the side of the brother, _卩 (10) _ conductor substrate layer. The shield member (10) covers the ring m to cover the semiconductor substrate and the stem 184. The cover if 18 is attached to the lower surface of the shield ring 182. Here, in order to prevent the loading reaction. 17 200837867 The semiconductor substrate in the Z/i45pif area 112 interferes with the lift bar m, and each lift bar ι84 can be set at the same distance. For example, the setting pitch of the two lifting rods i84 may be greater than the width of the semiconductor substrate. Here, the length of the lifting rod 184 may be greater than the length of the lifting pin, 128. Referring to Fig. 1 and Fig. 4, the partition member 13 分割 divides the internal space Z of the chamber 11 into the reaction zone 112 and the non-reaction zone 114. The branch component 120 is located in the area m β. Further, the 'partition member 13' and the branch portion are spaced apart from each other. That is, the partition member 13G does not directly contact the support member 12 and the bottom surface. Therefore, the amount of heat transferred from the reading member m through the partition to the non-reaction region 114 can be remarkably reduced. In the exemplary embodiment, :P: two pieces 130 ▽ have a bowl shape 'frame structure and support member η. The sides and the bottom surface are spaced apart. In addition, the partitioning member CHAN, the fulcrum portion (four) 提升 of the lifting shaft 122 is movably "fixed again - see Figure 1". The second lifting unit 162 is connected to the fixing portion (3), and the partitioning member m is rotated. Therefore, due to the second lifting The unit 162 lifts up the blade partitioning member and the first lifting unit 16G_cutting member (10), so that the separating unit (10) and the branching member (10) are lifted separately. Thus, the first lifting unit 16 can be utilized according to the optimum W-range condition. The library element provides the component 140 and the support member 12, and the space between the D and the support unit is 耽 、 、 、 、 、 、 、 、 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The 162 may include a pneumatic cylinder, a gearbox for transmitting the air pressure (four) force to the fixed portion 131, etc. The stopper 170 is horizontally disposed in the reaction zone 112 π. The stopper 17 is provided with a fixing rod 172, and the fixing rod 172 is worn. The partitioning member 13 (4) is set on the chamber ι 〇 18 200837867 Ζ / 1 Η δρ 。. In the exemplary embodiment, the fixing rod 172 is detachably coupled to the lower surface of the stopper or fixed to the lower surface of the stopper 170. The stopper port 0 limits the shielding member 180 and the lifting pin 12 The lowest position of 8. In this exemplary embodiment, the stopper 170 may have a ring shape. ^ ^ The reaction gas supply member 140 is placed on the support member 12''.
體提供部件140連接至入口 142。因此，用以自反應氣 ^生電漿之反應區112形成於反應氣體提供部件14〇與支 撐部件120之間。用於對反應氣體施mRF電力之rf電源 =5電性耦接至反應氣體提供部件14〇。此處，當反應ϋ hi、Ό卩件140之結構包含若干零件時，可於被施加尺^;電~ 力之各零件之交界面處產生電弧。因而，反應氣體提供部 件可具有一個主體，僅包含一個元件，藉以防止形成 2匕種乂界面。於此典型實施例中，反應氣體提供部件140 可包含用於使反應氣體均勻分布至半導體基板上之噴淋 頭0 山翏見圖1及圖5，絕緣部件150與分隔部件13〇之上 端相結合。於此典型實施例中，絕緣部件15〇放置於蓋工η 應氣體提供部件14〇間，以使反應氣體提供部件14〇 與f 111隔開。絕緣部件150之下表面與分隔部件13〇之 ^端相結合，以防止反應區112中之反應氣體出現洩漏。 卞另〗地’絕緣部件150之下表面低於反應氣體提供部件140 之下表面，以確保對被施加RF電力之反應氣體提供部件 運行電絕緣。於此典型實施例中，絕緣部件15〇可使 用之村料之實例可包含氧化鋁（alumina)。 19 200837867 IH-Opif 絕緣部件150之内表面暴露於反應區112中。如此， 由絕緣部件150之内表面、反應氣體提供部件140之下表 面以及支撐部件120之上表面界定反應區112。反應區112 藉由絕緣部件150與非反應區114隔開。非反應區114對 - 應於内部空間中除反應區112以外之空間。亦即，非反廣 ‘ 區n4是由室之内壁與分隔部件130之外表面界定^ 成。 此處，在反應區112的溫度相對低於反應區112之其 他部分之部分中，可產生異常沉積。此外，由於製程效率 的關係，可能不需要維持非反應區114之溫度實質相同於 反應區112之溫度。例如，為了最佳地形成非晶碳層或非 晶碳氟化合物層，可能需要使反應區112維持具有不低於 約200 C之溫度並使非反應區114具有約70°C至約80°C之 溫度。於此典型實施例中，因室110之内部空間被劃分成 相互隔離之反應區112與非反應區114，故無需利用額外 加熱元件便可非常容易地使室110具有上述溫度條件。 ⑩ 此外’為了將反應區Π2與非反應區114之壓力設定 . 成互不相同，於反應區112中設置第一壓力控制器19〇， 用於控制反應區112之壓力。於非反應區114中設置第二 壓力控制器，用於控制非反應區114之壓力。於此典型實 施例中，第一壓力控制器190之實例可包含壓力錶了例二 baratron愿力錶、convectron壓力錶等等。 第二壓力控制器包含裝在非反應區114内壁之壓力鐵 192、以及氣體管線119，氣體管線119連接至非反廡區 20 200837867 27148ριί 114，以將例如氮氣等惰性氣體引入非反應區114。因此， 可藉由調節經氣體管線Π9引入非反應區114之惰性氣體 之流率而恰當控制非反應區114之壓力。此外，當反應氣 體被引入反應區112、且藉由降下分隔部件13〇而使反應 區112與非反應區Π4彼此連通時或者在引入反應氣體之 丽及之後，可經由氣體管線119將惰性氣體引入反應區 112。向反應區112引入惰性氣體可防止反應區112中之反The body providing member 140 is coupled to the inlet 142. Therefore, a reaction zone 112 for self-reactive gas plasma is formed between the reaction gas supply member 14'' and the support member 120. The rf power source = 5 for applying mRF power to the reaction gas is electrically coupled to the reaction gas supply part 14A. Here, when the structure of the reaction ϋhi and the member 140 includes a plurality of parts, an arc can be generated at the interface of each of the parts to which the electric force is applied. Thus, the reaction gas supply member can have a body containing only one element, thereby preventing the formation of a 匕 type of 乂 interface. In the exemplary embodiment, the reactive gas supply member 140 may include a shower head 0 for uniformly distributing the reaction gas onto the semiconductor substrate. See FIGS. 1 and 5, the insulating member 150 and the upper end of the partition member 13 Combine. In the exemplary embodiment, the insulating member 15 is placed between the cover gas supply members 14 to separate the reaction gas supply members 14'' from the f111. The lower surface of the insulating member 150 is combined with the end of the partition member 13 to prevent leakage of the reaction gas in the reaction zone 112. Further, the lower surface of the insulating member 150 is lower than the lower surface of the reaction gas supply member 140 to ensure electrical insulation of the reaction gas supply member to which RF power is applied. In the exemplary embodiment, the example of the insulating member 15 may be alumina. 19 200837867 The inner surface of the IH-Opif insulating member 150 is exposed to the reaction zone 112. Thus, the reaction zone 112 is defined by the inner surface of the insulating member 150, the surface below the reactive gas supply member 140, and the upper surface of the support member 120. The reaction zone 112 is separated from the non-reaction zone 114 by an insulating member 150. The non-reaction zone 114 is - a space other than the reaction zone 112 in the internal space. That is, the non-inverse ‘area n4 is defined by the inner wall of the chamber and the outer surface of the partition member 130. Here, abnormal deposition may occur in a portion of the reaction zone 112 which is relatively lower than the other portion of the reaction zone 112. Moreover, due to process efficiency, it may not be necessary to maintain the temperature of the non-reactive zone 114 substantially the same as the temperature of the reaction zone 112. For example, to optimally form an amorphous carbon layer or an amorphous fluorocarbon layer, it may be desirable to maintain reaction zone 112 at a temperature of no less than about 200 C and non-reactive zone 114 of from about 70 ° C to about 80 °. The temperature of C. In the exemplary embodiment, since the internal space of the chamber 110 is divided into the reaction zone 112 and the non-reaction zone 114 which are separated from each other, the chamber 110 can be easily subjected to the above temperature conditions without using an additional heating element. Further, in order to set the pressures of the reaction zone Π2 and the non-reaction zone 114 to be different from each other, a first pressure controller 19A is provided in the reaction zone 112 for controlling the pressure of the reaction zone 112. A second pressure controller is provided in the non-reaction zone 114 for controlling the pressure of the non-reaction zone 114. In this exemplary embodiment, an example of the first pressure controller 190 may include a pressure gauge, a second baratron force gauge, a convectron pressure gauge, and the like. The second pressure controller includes a pressure iron 192 mounted on the inner wall of the non-reaction zone 114, and a gas line 119 connected to the non-reverse zone 20 200837867 27148ριί 114 to introduce an inert gas such as nitrogen into the non-reaction zone 114. Therefore, the pressure of the non-reaction zone 114 can be properly controlled by adjusting the flow rate of the inert gas introduced into the non-reaction zone 114 through the gas line Π9. Further, when the reaction gas is introduced into the reaction zone 112, and the reaction zone 112 and the non-reaction zone Π4 are communicated with each other by lowering the partition member 13〇 or after the introduction of the reaction gas, the inert gas can be supplied via the gas line 119. Reaction zone 112 is introduced. The introduction of an inert gas into the reaction zone 112 prevents the reaction in the reaction zone 112.
應氣體形成不需要的層。如此，可延長裝置1〇〇之清潔週 期，從而改善裝置1〇〇之運轉效率。此外，由於不需要的 層不會損壞裝置1GG之元件，故可延長元件壽命。於此血 型實施例巾，壓力錶192之實财包括bam·壓力錶了 convectron壓力錶等等。 為將半導體基板裝載於反應區112中，如圖3所示， 第二提升單元丨62降下分隔部件請，以於絕緣部件⑽ 升勒 提升桿184固定於止 ^件^)上。亦即’提升鎖128自切部件⑽上表面凸 二在 =3==，室=: 如圖1中所示，第-提升單元⑽括起支撑部件12〇。 23 200837867 27148pif =處，因提升銷12g之長度短於提升桿184之長度，故支 f部件先於提升桿184抬起提升銷128。持續抬起之支撐 牛120抬起遮蔽部件。因此，半導體基板被置於支 撐部件120上。此外，半導體基板之邊緣部被覆蓋以 部件180。 ;、二後將反應氣體引入反應區112中。由Rp電源195 、帝之妳龟力被加加至反應氣體，以於反應區中形 成電漿。電漿被施加至半導體基板上，以於半導體基板上 形成所需層。此處，由於遮蔽部件18〇 邊緣部，不會於半導體基板之邊緣部上形成不之 實施例2 9 圖9是例示根據本發明第二典型實施例用於形物 1曰置之剖視圖’其中支樓部件及分隔部件被抬起；圖 10疋例示圖9所示裝置之剖視圖，其中支撐部件已 ，Π是例示圖9所示裝置之剖視圖，其中支撐部件及牛隔 4件已降下；圖12是例示圖9所示第「χιι」 剖視圖〇 刀之放大 除室U0之下表面外’此典型實施例之裳 與貝知例1之裝置100實質相同之元件。因此匕: =指代相同元件，且為簡明起見，對相同^件不=以 參見圖9至圖12,室110與蓋ηι相結合形成 曰，用於在其中裝載半導體基板。用於向内部空 反應氣體之入口 116形成於室110之上表 二3 入 上表面上。用於排放 22 200837867 Ζ/ ΙΗόρπ 副產物之出口 118形成於室i10之下表面上。可連接真空 幫浦（未顯示）至出口 118。因此’即便在室110中可產 生洩漏，也可對副產物施加重力，使副產物可經由室no 下表面上之出口 118排放至室no外。此外，出口 118設 置於室110下表面之中央部。因此，副產物可沿最短之直 路徑自入口 Π6流至出口 118。亦即，反應氣體之運動路 徑可盡可能短。如此，便不會於裝置200位於運動路徑中 之元件上形成不需要的層。 支撐部件120之侧面與分隔部件130及絕緣部件15〇 相互間隔開，以於支撐部件與分隔部件130及絕緣部件15〇 間形成第一排放通道113。反應區112中所產生之副產物 流經第一排放通道113。 分隔部件130具有固定部131，支撐部件120之提升 軸122即可活動地插穿過固定部131。第二排放通道138 垂直貫穿固定部131形成。第二排放通道138連通反應區 112。因此，副產物流經第二排放通道138。於此典型實施 例中，為使副產物具有較短之運動路徑，可將第二排放通 道138毗鄰提升轴122設置。 支撐部115可活動地插入於提升軸122中，以向上支 撐分隔部件130。第三排放通道117垂直貫穿支撐部115 形成。第三排放通道117連接於第二排放通道117與出口 118間。因此，產生於反應區I〗】中之副產物可經第一排 放通迢113、第二排放通道138、第三排放通道117及出口 Π8而迅速排放至室ho外。 23 200837867 z/i^fspii 根據此典型實施例，因出口形成於室之下表面，故即 使在至中產生茂漏，副產物亦可於重力作用下朝出口運 動。因此，副產物不會黏附至半導體基板及/或室之内壁 上。此外，因出口形成於室下表面之中央部，故經入口引 入至中之反應氣體可藉由最短之路徑排放至外部。因此， _ 不會於沿運動路徑之元件上形成由副產物造成之不需要的 層。 ^圖13是例示根據本發明第三典型實施例用於形成物 貝層之裝置之剖視圖，其中支撐部件及分隔部件被抬起； 圖14是例示圖13所示裝置之剖視圖，其中支撐部件已降 下，圖15是例示圖13所示裝置之剖視圖，其中支撐部件 ^分隔部件已降下；目16是例示圖13所示第「撕」部 分之放大剖視圖，其中分隔部件與絕緣部件相互結合；圖 17及18是例示分隔部件與絕緣部件間之其他組合結 放大剖視圖。 鲁 =分隔部件130與絕緣部件150間之組合結構外，此 ' ，型實補之裝置包含與實施m之裝置1GG實質相 • 同之元件。因此，相同元件符號指代相同元件，且為_ 起見，對相同元件不再予以贅述。 曰 芩見圖13至圖16，朝上凸起133形成於分隔部件 之上表面。朝下凸起152形成於絕緣部件150之下表面。 因此，朝上凸起133緊密接觸絕緣部件15〇之下表面 下凸起152緊密接觸分隔部件13〇之上表面。為防止在將 24 200837867 Ζ/14δρΐί 分隔部件13〇與絕緣部件15G相互組裝於—起時朝上凸起 133與朝下凸起152間發生碰撞，朝上凸起與朝下凸 起152於水平方向上充分地彼此間隔開，以於朝上凸起】33 與朝下凸起152間形成緩衝空間。 -另外，彈性部件156可内建於絕緣部件15〇中，以於 刀隔邛件130與絕緣部件mo相互組裝於一起時所產生之 接觸衝擊。於此典型實施例巾，由於衝擊吸收效率的關係The gas should form an unwanted layer. In this way, the cleaning cycle of the device can be extended, thereby improving the operational efficiency of the device. In addition, since the unnecessary layers do not damage the components of the device 1GG, the life of the components can be extended. For this blood type embodiment towel, the real money of the pressure gauge 192 includes a bam·pressure gauge, a convectron pressure gauge, and the like. In order to load the semiconductor substrate in the reaction zone 112, as shown in Fig. 3, the second lifting unit 丨 62 lowers the partition member so that the insulating member (10) lifts the lift lever 184 to be fixed to the stopper. That is, the upper surface of the self-cutting member (10) of the lift lock 128 is convex at =3==, chamber =: as shown in Fig. 1, the first-lifting unit (10) encloses the support member 12A. 23 200837867 27148pif = where the lift pin 12g is shorter than the length of the lift rod 184, the support member lifts the lift pin 128 prior to the lift rod 184. Support for continuous lifting The cow 120 lifts the shield. Therefore, the semiconductor substrate is placed on the support member 120. Further, the edge portion of the semiconductor substrate is covered with the member 180. After the reaction gas is introduced into the reaction zone 112. The Rp power source 195 and the emperor's tortoise force are added to the reaction gas to form a plasma in the reaction zone. A plasma is applied to the semiconductor substrate to form the desired layer on the semiconductor substrate. Here, since the edge portion of the shielding member 18 is not formed on the edge portion of the semiconductor substrate, FIG. 9 is a cross-sectional view for the shape 1 in accordance with the second exemplary embodiment of the present invention. The support member and the partition member are lifted; FIG. 10 is a cross-sectional view of the device shown in FIG. 9 , wherein the support member has been exemplified as a cross-sectional view of the device shown in FIG. 9 , wherein the support member and the cow compartment have been lowered; 12 is an element exemplifying the apparatus of the exemplary embodiment in which the apparatus of the exemplary embodiment is substantially the same as the apparatus 100 of the example 1 of the first embodiment of the χ ι ι 之 。 。 。 。 。 。 。. Therefore, 匕: = refers to the same component, and for the sake of brevity, the same is not shown. Referring to Figs. 9 to 12, the chamber 110 and the cover η are combined to form a crucible for loading a semiconductor substrate therein. An inlet 116 for reactive gas to the interior is formed on the upper surface of the chamber 110 on the upper surface. For discharge 22 200837867 Ζ / ΙΗόρπ The by-product outlet 118 is formed on the lower surface of chamber i10. A vacuum pump (not shown) can be connected to the outlet 118. Thus, even if a leak can be generated in the chamber 110, gravity can be applied to the by-product so that by-products can be discharged to the outside of the chamber via the outlet 118 on the lower surface of the chamber no. Further, the outlet 118 is disposed at a central portion of the lower surface of the chamber 110. Therefore, by-products can flow from the inlet Π6 to the outlet 118 along the shortest straight path. That is, the moving path of the reaction gas can be as short as possible. As such, unwanted layers are not formed on the components of device 200 that are in the motion path. The side surface of the support member 120 is spaced apart from the partition member 130 and the insulating member 15A to form a first discharge passage 113 between the support member and the partition member 130 and the insulating member 15. The by-products generated in the reaction zone 112 flow through the first discharge passage 113. The partition member 130 has a fixing portion 131, and the lifting shaft 122 of the support member 120 is movably inserted through the fixing portion 131. The second discharge passage 138 is formed vertically through the fixing portion 131. The second discharge passage 138 communicates with the reaction zone 112. Therefore, the by-product flows through the second discharge passage 138. In this exemplary embodiment, the second discharge passage 138 can be disposed adjacent to the lift shaft 122 for the byproduct to have a shorter path of motion. The support portion 115 is movably inserted into the lift shaft 122 to support the partition member 130 upward. The third discharge passage 117 is formed vertically through the support portion 115. The third discharge passage 117 is connected between the second discharge passage 117 and the outlet 118. Therefore, by-products generated in the reaction zone I can be quickly discharged to the outside of the chamber through the first discharge port 113, the second discharge passage 138, the third discharge passage 117, and the outlet port 8. 23 200837867 z/i^fspii According to this exemplary embodiment, since the outlet is formed on the lower surface of the chamber, by-products can also move toward the outlet under the action of gravity even if a leak occurs in the middle. Therefore, by-products do not adhere to the inner walls of the semiconductor substrate and/or the chamber. Further, since the outlet is formed at the central portion of the lower surface of the chamber, the reaction gas introduced into the inlet through the inlet can be discharged to the outside through the shortest path. Therefore, _ does not form an unnecessary layer caused by by-products on the elements along the motion path. Figure 13 is a cross-sectional view showing an apparatus for forming a shell layer according to a third exemplary embodiment of the present invention, in which the support member and the partition member are lifted; Figure 14 is a cross-sectional view showing the apparatus shown in Figure 13, wherein the support member has been 15 is a cross-sectional view illustrating the apparatus of FIG. 13 in which the support member has been lowered; and FIG. 16 is an enlarged cross-sectional view showing the "tear" portion of FIG. 13 in which the partition member and the insulating member are coupled to each other; 17 and 18 are enlarged cross-sectional views illustrating other combinations between the partition member and the insulating member. Lu = In addition to the combined structure between the partition member 130 and the insulating member 150, the device of the type complementing the device includes the same components as the device 1GG for implementing m. Therefore, the same component symbols refer to the same components, and the same components will not be described again.至 芩 Referring to Figures 13 to 16, an upwardly facing projection 133 is formed on the upper surface of the partition member. The downward projection 152 is formed on the lower surface of the insulating member 150. Therefore, the upward facing projection 133 closely contacts the lower surface of the insulating member 15 and the lower projection 152 closely contacts the upper surface of the partition member 13A. In order to prevent the collision between the upward convex 133 and the downward convex 152 when the 24 200837867 Ζ/14δρΐί partition member 13〇 and the insulating member 15G are assembled to each other, the upward convex and downward convex 152 are horizontal. The directions are sufficiently spaced apart from each other to form a buffer space between the upwardly convex 33 and the downwardly facing projection 152. Further, the elastic member 156 may be built in the insulating member 15A to cause a contact impact when the blade spacer 130 and the insulating member mo are assembled to each other. In the typical embodiment of the towel, due to the impact absorption efficiency
而可有利地將彈性部件156毗鄰朝下凸起152置於絕 件150中。1 或者，如圖Η所示，彈性部件156可放置於朝上凸起 =與朝下凸起I52間。雜部件⑼可具有沿絕緣部件 下表面或沿分隔部件13〇上表面之輪廓。此外，如圖 ^所示，彈性部件156可内建於分隔部件13〇巾。由於衝 孝及收效率的關係而有利地將彈性部件紕鄰朝上凸起 133置於分隔部件13〇中。 此處，彈性部件156可位於上述三個位置之任二位置 例如，彈性部件156可包含内建於絕緣部件150内之 弟一部件以及放置於朝上㈣133與朝下凸起152間之第 ^部件’ 3戈包含放置於朝上凸⑴％與朝下凸起152間之 弟二部件與内建於分隔部件13〇内之第三部件，内建於絕 ^部件150内之第-部件與内建於分隔部件13〇内之第三 ，件’或包含内建於絕緣部件15〇内之第一部件、放置二 =凸起m舆朝下凸起152間之第二部件以及内建於分 牛130内之第三部件。 25 200837867 Δί iHOpii .根據此典型實施例，可於分隔部件之朝上凸起鱼 ^牛之朝下凸起間形成緩衝空間，從而使分隔部件與絕緣 ，件不會相互碰撞。因此，因麵部件與絕緣部件不會受 P貝部f不會產生會對半導體基板產生不利影響之微粒。分 =件及/絲緣料#之部件可抑讀分隔部件及 、、、巴緣部件之損壞，以防止產生微粒。 典型f施例4 質層縣制帛四钟實闕祕形成物 f置⑽與絕緣部件15G外，此典型實施例之 t 士包含與貫施例3之裝置實質相同之元件。因 生相^件符號指代相同元件，且為簡 7L件不再予以贅述。 凡訂則 參見圖19,此典型實施例之裝置3〇〇a之分隔 t絕緣部件15。不具有躲形成緩衝空間之凸起。因此， $部件130之整個上表面緊密接觸絕緣部件15〇之整個 、表面。或者，可於分隔部件13〇中形成凸 亚^於絕緣部件15〇中形成供此凸起插人之凹槽 ^ 5 !30 i5〇 件部们恤可放置於分隔部件130與絕緣部 或分Π半彈性部件15如可内建於絕緣部件150 位置^壬二位此外，彈性部件⑽可饭於上述三個 26 200837867 Ζ/Ι45ρΐίAdvantageously, the resilient member 156 can be placed adjacent the downward projection 152 in the outer member 150. 1 Alternatively, as shown in FIG. ,, the elastic member 156 may be placed between the upwardly convex portion and the downwardly facing projection I52. The miscellaneous member (9) may have a contour along the lower surface of the insulating member or along the upper surface of the partition member 13. Further, as shown in FIG. 2, the elastic member 156 may be built in the partition member 13 to be wiped. The elastic member adjacent to the upward projection 133 is advantageously placed in the partition member 13A due to the relationship between the filial piety and the efficiency. Here, the elastic member 156 may be located at any two positions of the above three positions. For example, the elastic member 156 may include a member built in the insulating member 150 and placed between the upward (four) 133 and the downwardly facing projection 152. The component '3' includes a second member placed between the upwardly convex (1)% and the downwardly facing projection 152 and a third component built in the partitioning member 13A, and the first component built into the permanent component 150 and a third member built into the partition member 13A, or a first member including a first member built in the insulating member 15b, a second member placed between the second projection 54 and the downward projection 152, and a built-in The third part of the cow 130. 25 200837867 Δί iHOpii. According to this exemplary embodiment, a buffer space can be formed between the upwardly convex projections of the upwardly protruding fish of the partition member so that the partition member and the insulation do not collide with each other. Therefore, the surface member and the insulating member are not affected by the P-shell portion f, and particles which adversely affect the semiconductor substrate are not generated. The parts of the part = / / wire edge material # can suppress the damage of the partition parts and the edge parts to prevent the generation of particles. Typically, the embodiment of the present invention is the same as that of the apparatus of the third embodiment except that the material layer is formed by the four-layered structure and the insulating member 15G. The symbol of the phase is referred to as the same component, and is not repeated here. Referring to Figure 19, the apparatus 3a of this exemplary embodiment is divided into t-insulating members 15. There is no protrusion that hides the buffer space. Therefore, the entire upper surface of the member 130 is in close contact with the entire surface of the insulating member 15 . Alternatively, a concave portion may be formed in the partition member 13A to form a recess for the protrusion to be inserted into the insulating member 15A. 5: 30 i5 The arm portion may be placed on the partition member 130 and the insulating portion or the minute The semi-elastic member 15 can be built in the position of the insulating member 150. In addition, the elastic member (10) can be used for the above three 26 200837867 Ζ/Ι45ρΐί
矣型實施例J 所圖20疋例示根據本發明第五典型實施例用於形成物 二層2置之剖視圖；圖21是例示圖2〇所示裝置之剖視 二視^已降下；圖22是例示圖2〇戶斤示裝置之 二二’：、中支撐部件及分隔部件已降下；SI 23是例示圖 所一 ^ 卩件之放大剖視圖；圖24及圖25是例示圖20 不衣置中彈性部件之其他佈局結構之剖視圖。 裝置=:::丄緣部件150外，此典型實施例之 此，相同元件符H 裝置100實質相同之元件。因 元件不再予以贅^同元件，且為簡明起見，對相同 及^ ’分隔部件13G包含本體部132以 合部134之--技ΓΗ牛包含具有本體部132及結 ± , —兀牛。絕緣部件】50與結合部134之上声 二：可料因分隔部件-與絕緣部件二 的，成！繁損壞之結合部134更換為新 中，本體;的。在此典型實施例 而相互社人+Γ〇Ι利用例如螺检等嗜合部件 。此外’為密封本體部132與結合部！ =可^t㈣與結合部134__件136, 收’彈性部件156可内建於絕緣部件150中，以吸 “將7刀隔部件m與絕緣部件15〇相互組裝於一起時結 27 200837867 Ζ7148ρΐί 合部134與絕緣部件150間之接觸衝擊。 或者，如圖24所示，可於分隔部件13〇與絕緣部件 150間放置彈性部件156。此外，彈性部件156可内建於結 合部134中。 '矣Type Embodiment J FIG. 20A is a cross-sectional view showing a second layer 2 for forming a body according to a fifth exemplary embodiment of the present invention; FIG. 21 is a cross-sectional view showing the apparatus shown in FIG. 2 is an example of the second embodiment of the household device: the middle support member and the partition member have been lowered; the SI 23 is an enlarged cross-sectional view of the illustration; A cross-sectional view of another layout structure of the middle elastic member. The device =::: outside the rim member 150, the same components of the exemplary embodiment, the elements of the H device 100 are substantially identical. Since the component is no longer the same component, and for the sake of brevity, the same and the '' partition member 13G includes the body portion 132 to be the merging portion 134--the technical yak contains the body portion 132 and the knot ±, - yak . Insulation parts] 50 and the sound above the joint 134. Two: The material can be separated by the partition member - and the insulation member. The damaged joint 134 is replaced with a new one, the body; In this exemplary embodiment, mutual members such as screw tests are used. In addition, the body portion 132 and the joint portion are sealed! = (t) and the joint portion 134__ member 136, the 'elastic member 156' can be built into the insulating member 150 to absorb "the 7-knife spacer member m and the insulating member 15" are assembled with each other when the knot 27 200837867 Ζ 7148ρΐ 合The contact between the portion 134 and the insulating member 150. Alternatively, as shown in Fig. 24, the elastic member 156 may be placed between the partition member 13A and the insulating member 150. Further, the elastic member 156 may be built in the joint portion 134.
此處，彈性部件156可位於上述三個位置之任二位置 上。例如，彈性部件156可包含内建於絕緣部件l5Q内之 第一部件以及放置於結合部134與絕緣部件15〇間之第二 部件’或包含放置於結合部134與絕緣部件間之第二 部件與内建於結合部134内之第三部件、内建於^緣部^ 150内之第一部件與内建於結合部134内之第三部件，或 包含内建於絕緣部件150内之第一部件、放置於結合部134 與絕緣部件150間之第二部件以及内建於結合部内之 第三部件。 根據此典型實施例，因分隔部件可包含具有本體部及 結合部之二7〇件，故可僅將雜受損之結合部更換為新 的。如此，便無需整個地更換分隔部件，進而可降低裝置 運行成本。 典型實施例@ 弟/、典型實施例用於形成物 圖26是例示根據本發明 質層之裝置之剖視圖。 r例5此典型實_之裝置5GG具有分別根據· =二之i置100、200、300及_之組合、: 對相η元#目同7°件付#u指代相㈣件，且為簡明起見 對相同7〇件不再予以贅述。 28 200837867 Ζ/14δρΐΙ 根據本發明，可將分隔部件與具有加埶器之支稽部件 間隔開1錢麵部件不直接闕支料件。因此， 止加熱轉過分隔部件轉反魅損失埶量。 故可iUift提升料提起分隔部件及支撑部件， 條件而恰當地調整支撐部件上之基板與 反應氣體長：供部件間之空隙。 、 出現=:=，成;室之下表面，故即使在室中可能 叫產物^㈣°猎重力使副產物向下朝出口運動。因此， 田產物不會_域板及/或室之内壁上 可抑 口引=之=成:室下表面之中央部，經入 田士，il 體可流經最短路徑並可經出口排出。 的層。θ於路從中之元件上形成由副產物所致之不需要 起間形成緩衝空與絕緣部件之朝下凸 故分隔部件㈣&=件，絕緣部件提㈣性部件’ 隔部件與絕緣部擊如此，分 賴製程產生不利影響;’攸而不會產生會對半 可個分隔部件，進二低裝置：:本此， 二二述了本發明的較佳實施例，但須注I是 本7頁域私此項技藝者可以根據上述教示内容做各^ 29 200837867 27l4bpii -改、變更。因此，應理解的是 例特別改變，此實施例是在所附的實施 本發明的範圍和精神之内。 出的 【圖式簡單說明】 結合下列附圖閱讀上文詳細說 他特徵及優點將更加—目了铁。科j之上述及其 層之據in第:典型實施例用於形成物質 Η 2 θ彳f _ Z，、中支撐部件及分隔部件被抬起。 降下圖_㈣1所枝置之剖烟，其中支撐部件已 圖3是例示圖2所示裝 ^ 分隔部件已降下。衣置之口域圖，其中支撐部件及 3例示圖1所示分隔部件之放大剖視圖。 ^ 6 3不圖1所不第「V」部分之放大剖視圖。 ==示圖1所示第、部分之放大剖視圖。 列示圖！所示第「νπ」部分之放大剖視圖。 二^ ’ 1所示遮蔽部件之放大剖視圖。 芦之;¥ ^^據本發明第二典型實施畑於形成物質 層之麵，射找料及分隔料被抬起。 降下Υ疋例不圖9所示裝置之剖視圖，其中支撐部件已 分隔所示裝置之剖視圖，其中支撐部件及 回是例示圖9所示第「χπ」部分之放大剖視圖。 30 200837867 ζ/ι^-δριί 圖13是例示根據本發明第三典型實施例用於形成物 質層之裝置之剖視圖，其中支撐部件及分隔部件被抬起。 圖14是例示圖13所示裝置之剖視圖，其中支撐部件 已降下。· 圖15是例示圖13所示裝置之剖視圖，其中支撐部件 ' 及分隔部件已降下。 圖16是例示圖13所示第「χνι」部分之放大剖視圖， •其中分隔部件與絕緣部件相互結合。 圖17及18是例示分隔部件與絕緣部件間之其他组人 結構之放大剖視圖。 ' 口 圖19是例示根據本發明第四典型實施例用於形成物 質層之裝置之剖視圖。 圖20是例示根據本發明第五典型實施例用於形成物 質層之裝置之剖視圖。 圖21是例示圖20所示裝置之剖視圖，其中支撐部件 已降下。 _ ® 22是例示圖20所示裝置之剖視圖，其中支撐部件 • 及分隔部件已降下。 _ 圖23是例示圖20中分隔部件之放大剖視圖。 圖24及圖25是例示圖2〇所示裝置中彈性部件之其他 佈局結構之剖視圖。以及 ” 圖26是例不根據本發明第六典型實施例用於形成物 質層之裝置之剖視圖。 200837867 2/14δρΐΙ .【主要元件符號說明】 100:用於形成物質層之裝置 110 :室 111 ··蓋 112 :反應區 113 :第一排放通道 114 :非反應區 115 :支撐部 116 :入口 117 :第三排放通道 118 :出口 119 :氣體管線 120 :支撐部件 121 :加熱器 122 :提升軸 124 :第一提升通道 126 :第二提升通道 128 :提升銷 129 :頭部 130 :分隔部件 131 :固定部 132 :本體部 133 :朝上凸起 134 :結合部 32 200837867 Ζ/Ι^-δρίΙ 136 :密封部件 138 :第二排放通道 140 :反應氣體提供部件 150 :絕緣部件 152 :朝下凸起 156 :彈性部件 160 :第一提升單元 162 :第二提升單元 170 :止擋件 172 :固定桿 180 :遮蔽部件 182 :遮蔽環 184 :提升桿 190 :第一壓力控制器 192 :壓力錶 195 :射頻（RF)電源 200 :用於形成物質層之裝置 300 :用於形成物質層之裝置 300a:用於形成物質層之裝置 400 ··用於形成物質層之裝置 400a:用於形成物質層之裝置 400b:用於形成物質層之裝置 33Here, the elastic member 156 may be located at any two of the above three positions. For example, the elastic member 156 may include a first member built into the insulating member 15Q and a second member placed between the joint portion 134 and the insulating member 15 or a second member placed between the joint portion 134 and the insulating member. And a third component built into the joint portion 134, a first component built into the edge portion 150, and a third component built into the joint portion 134, or including the first component built into the insulating member 150 A component, a second component placed between the bonding portion 134 and the insulating member 150, and a third component built into the bonding portion. According to this exemplary embodiment, since the partition member can include two members having the body portion and the joint portion, only the miscellaneous joint portion can be replaced with a new one. In this way, it is not necessary to replace the partition member as a whole, thereby reducing the operating cost of the device. Exemplary Embodiment @弟的, Exemplary Embodiment for Formation Figure 26 is a cross-sectional view showing a device according to the present invention. r example 5 This typical device 5GG has a combination of 100, 200, 300 and _ according to the == two, respectively: the phase η元# the same 7° piece #u refers to the phase (four) pieces, and For the sake of brevity, the same 7 pieces will not be described again. 28 200837867 Ζ/14δρΐΙ According to the invention, the partition member can be spaced from the branch member having the twister, and the surface member is not directly attached to the support member. Therefore, the heating is turned over the separation member to reduce the amount of loss. Therefore, the iUift lifting material can lift the partition member and the supporting member, and appropriately adjust the substrate on the supporting member and the reaction gas length: for the gap between the members. , ===, into the lower surface of the chamber, so even in the room may be called product ^ (four) ° hunting gravity to make by-products move downward toward the exit. Therefore, the field product will not be _ domain plate and / or the inner wall of the chamber can be suppressed. = = the central part of the lower surface of the chamber. After entering the field, the il body can flow through the shortest path and can be discharged through the outlet. Layer. θ is formed on the component from which the by-product is formed by the by-product, and the partitioning member (4) & component is formed, and the insulating member is provided. , depending on the process, has an adverse effect; '攸 does not produce a half-separable component, into the second low device:: This, the second embodiment describes the preferred embodiment of the present invention, but the note I is this 7 The page domain private artist can make various changes and changes according to the above teaching contents. Therefore, it is to be understood that the embodiments are particularly modified, and such embodiments are within the scope and spirit of the accompanying embodiments. [Simplified description of the diagram] The above description of the details is combined with the following figures. The above and its layers are in the first embodiment: the exemplary embodiment is used to form a substance Η 2 θ 彳 f _ Z, and the middle support member and the partition member are lifted. Lowering the cross-section of Fig. 4(4), the support member has been shown in Fig. 3 to illustrate that the partition member shown in Fig. 2 has been lowered. An open-mouth view of the garment, in which the support member and the partition member shown in Fig. 1 are enlarged. ^ 6 3 is not an enlarged cross-sectional view of the "V" portion of Figure 1. == Show an enlarged cross-sectional view of the first part shown in Fig. 1. List the map! An enlarged cross-sectional view of the portion "νπ" shown. An enlarged cross-sectional view of the shielding member shown in Fig. 1 . According to the second exemplary embodiment of the present invention, the surface of the material layer is formed, and the shot material and the partition material are lifted. A lower cross-sectional view of the apparatus shown in Fig. 9 in which the support member has been separated from the cross-sectional view of the apparatus shown, wherein the support member and the back are an enlarged cross-sectional view showing the "χπ" portion shown in Fig. 9. 30 200837867 ζ/ι^-δριί Figure 13 is a cross-sectional view showing an apparatus for forming a material layer according to a third exemplary embodiment of the present invention, in which the support member and the partition member are lifted. Figure 14 is a cross-sectional view illustrating the apparatus of Figure 13 with the support member lowered. Figure 15 is a cross-sectional view showing the apparatus of Figure 13 in which the support member ' and the partition member have been lowered. Fig. 16 is an enlarged cross-sectional view showing a portion of the "χνι" portion shown in Fig. 13, in which the partition member and the insulating member are coupled to each other. 17 and 18 are enlarged cross-sectional views illustrating other group structures between the partition member and the insulating member. Fig. 19 is a cross-sectional view showing an apparatus for forming a material layer according to a fourth exemplary embodiment of the present invention. Figure 20 is a cross-sectional view illustrating an apparatus for forming a material layer in accordance with a fifth exemplary embodiment of the present invention. Figure 21 is a cross-sectional view illustrating the apparatus of Figure 20 with the support member lowered. _ ® 22 is a cross-sectional view illustrating the apparatus shown in Fig. 20 in which the support member and the partition member have been lowered. FIG. 23 is an enlarged cross-sectional view illustrating the partition member of FIG. 20. Fig. 24 and Fig. 25 are cross-sectional views showing other layout structures of the elastic members in the apparatus shown in Fig. 2A. And Fig. 26 is a cross-sectional view showing an apparatus for forming a material layer according to a sixth exemplary embodiment of the present invention. 200837867 2/14δρΐΙ . [Explanation of main component symbols] 100: Apparatus for forming a material layer 110: Chamber 111 Cover 112: Reaction zone 113: First discharge passage 114: Non-reaction zone 115: Support section 116: Entrance 117: Third discharge passage 118: Outlet 119: Gas line 120: Support member 121: Heater 122: Lifting shaft 124 : first lifting passage 126 : second lifting passage 128 : lifting pin 129 : head 130 : partition member 131 : fixing portion 132 : body portion 133 : upward convex 134 : joint portion 32 200837867 Ζ / Ι ^ - δρίΙ 136 : Sealing member 138 : second discharge passage 140 : reaction gas supply member 150 : insulating member 152 : downward projection 156 : elastic member 160 : first lifting unit 162 : second lifting unit 170 : stopper 172 : fixing rod 180: shielding member 182: shielding ring 184: lifting lever 190: first pressure controller 192: pressure gauge 195: radio frequency (RF) power supply 200: means for forming a material layer 300: means for forming a material layer 300a: For formation Device for the layer 400 ·· Device for forming a layer of material 400a: Device for forming a layer of material 400b: Device for forming a layer of matter 33