KR101329571B1 - Apparatus for forming a layer - Google Patents

Abstract

The film forming apparatus includes a chamber having an internal space into which a substrate is loaded, a partition member that divides the internal space of the chamber into a reaction chamber containing a substrate and a non-reaction chamber, a support portion disposed in the reaction chamber to support and heat the substrate, and an interior of the support portion. Heater for heating the substrate, disposed on top of the support portion, the reaction gas supply unit for supplying the reaction gas to the reaction chamber, the insulating member surrounding the reaction gas supply unit and coupled with the partition member to isolate the reaction chamber and the non-reaction chamber, support And a first elevating unit for elevating and elevating a partition member. Therefore, since the partition member is spaced apart from the support portion in which the heater is built in, heat transfer from the heater to the partition member is suppressed. As a result, heater heat loss to the non-reaction chamber can be suppressed.

Description

Film Forming Apparatus {APPARATUS FOR FORMING A LAYER}

1 is a cross-sectional view showing a state in which a support part and a partition member are raised in the film forming apparatus according to the preferred embodiment of the present invention.

Figure 2 is a cross-sectional view showing a state that the support is lowered in the device of FIG.

3 is a cross-sectional view showing a state that the support and the partition member is lowered in the apparatus of FIG.

4 is an enlarged cross-sectional view of the partition member of FIG. 1.

5 is an enlarged cross-sectional view showing a portion V of FIG. 1.

6 is an enlarged cross-sectional view showing a portion VI of FIG. 1.

FIG. 7 is an enlarged cross-sectional view of the region of FIG. 1.

8 is an enlarged perspective view of the shadow member of FIG. 1.

Description of the Related Art [0002]

110: chamber 120: support

130: partition member 140: reaction gas supply unit

150: insulating member 160, 162: lifting part

170: stopper 180: shadow member

TECHNICAL FIELD The present invention relates to a film forming apparatus, and more particularly, to an apparatus for forming an amorphous carbon film or an amorphous fluorocarbon film on a semiconductor substrate.

In recent years, as the degree of integration of semiconductor devices is improved, the operating speed of semiconductor devices has also increased proportionally. However, the high degree of integration of the semiconductor device requires a narrow gap between the metal wires. For this reason, the problem that the signal transmission time between wirings is delayed arises. This signal delay is mainly due to the parasitic capacitance of the insulating material and the high resistance of the metal wiring.

Therefore, in order to solve the signal delay problem, it is required to lower the dielectric constant of the insulating material or lower the resistance of the metal wiring. At present, many researches have been made to reduce the resistance of metal wiring and the dielectric constant of an insulating material. According to the recently proposed method, a combination technique using copper as a metal wiring and carbon or carbon fluoride as an insulating material has been proposed.

Copper has lower electrical conductivity than conventional aluminum. Since fluorine has a high electronegativity, it has a function of lowering the dielectric constant of an insulating material such as a silicon oxide film. However, the higher the fluorine content, the worse the thermal stability of the insulating material. In order to solve this phenomenon, a method of adding not only fluorine but also carbon to the insulating material has been proposed. Since carbon has a high thermal stability as the ratio of crosslinking increases, it is possible to give thermal insulation to the insulating material while lowering the relative dielectric constant of the insulating material by appropriately adjusting the addition ratio of fluorine and carbon.

The amorphous carbon film having the above characteristics can be mainly formed on a semiconductor substrate using a plasma-enhanced chemical vapor deposition (PECVD) apparatus. One example of a conventional PECVD apparatus is disclosed in Korean Patent Laid-Open Publication No. 2003-41844.

Meanwhile, a conventional PECVD apparatus includes a chamber having an internal space into which a semiconductor substrate is loaded, a partition member disposed in the chamber to partition the internal space into a reaction chamber and a non-reaction chamber, and disposed above the partition member to provide a reaction gas into the reaction chamber. Reaction gas supply unit, and a heater provided on the bottom surface of the partition member. The semiconductor substrate is placed on a heater in the reaction chamber so that plasma generated from the reaction gas introduced from the reaction gas supply portion is provided on the semiconductor substrate, whereby a film such as an amorphous carbon film or an amorphous fluorocarbon film is formed on the semiconductor substrate.

By the way, in the conventional PECVD apparatus, the heater is disposed on the partition member. That is, the heater and the partition member are in direct contact. For this reason, there is a problem that a substantial part of the heat generated by the heater is lost to the non-reaction chamber through the partition member. Since the heat loss of the heater means loss of reaction heat for plasma generation, it is impossible to form a film having desired characteristics on the semiconductor substrate. In addition, the time before forming a film of a desired thickness on the semiconductor substrate may be delayed.

In addition, in the conventional PECVD apparatus, it is impossible to adjust the distance between the reaction gas supply unit and the heater. That is, it is not possible to arbitrarily adjust the distance between the semiconductor substrate placed on the heater and the reaction gas supply portion. Therefore, it is not possible to select the interval between the semiconductor substrate and the reaction gas supply, which is one of the process conditions for forming the film having the best characteristics. As a result, it is not easy to form a film having desired characteristics using a conventional PECVD apparatus.

The present invention provides a film forming apparatus that can arbitrarily adjust the distance between the heater and the reaction gas supply while minimizing the heat loss of the heater.

According to one aspect of the present invention, a film forming apparatus includes a chamber having an inner space into which a substrate is loaded; A partition member dividing the internal space into a reaction chamber and a non-reaction chamber accommodating a substrate; A support part disposed in the reaction chamber to support the substrate; A reaction gas supply unit disposed above the support unit and configured to supply a reaction gas to the reaction chamber; An insulating member selectively coupled to the partition member to isolate the reaction chamber from the non-reaction chamber; And a first elevating unit for elevating the chuck; And a second elevating unit for elevating the partition member.

According to an embodiment of the present invention, the partition member may have a bowl shape spaced apart from side and bottom surfaces of the heater.

According to another embodiment of the present invention, the insulating member may have a bottom surface positioned lower than a bottom surface of the reaction gas supply unit.

According to another embodiment of the present invention, the reaction gas supply unit may have an integrated structure consisting of one member.

According to another embodiment of the present invention, the film forming apparatus includes a first pressure control unit for adjusting the pressure of the reaction chamber; And a second pressure controller for adjusting the pressure of the non-reaction chamber.

According to another embodiment of the present invention, the film forming apparatus includes a lift pin which is inserted into the first lifting passage formed in the heater so as to be able to lift and lower the substrate; A shadow member inserted into the second lifting passage formed in the heater so as to be liftable and shielding an edge of the substrate to prevent an unwanted film from being deposited on the edge of the substrate; And a stopper disposed in the reaction chamber to limit a lowering position of the lift pin and the shadow member.

According to still another embodiment of the present invention, the film forming apparatus may further include a heater provided inside the support and for heating the substrate.

According to the present invention described above, since the partition member has a bowl shape spaced apart from the support portion in which the heater is built in, heat transfer from the heater to the partition member is suppressed. As a result, heater heat loss to the non-reaction chamber can be suppressed. In addition, since the supporting portion and the partition member are lifted by the elevating portions, the distance between the substrate placed on the supporting portion and the reactive gas supply portion can be arbitrarily adjusted to suit the optimum process conditions.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

With respect to the embodiments of the present invention disclosed in the text, specific structural to functional descriptions are merely illustrated for the purpose of describing the embodiments of the present invention, the embodiments of the present invention may be embodied in various forms and It should not be construed as limited to the embodiments described.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between. Other expressions that describe the relationship between components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the terms "comprise", "having", and the like are intended to specify the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, , Steps, operations, components, parts, or combinations thereof, as a matter of principle.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

1 is a cross-sectional view showing a state in which the support and the partition member are raised in the film forming apparatus according to a preferred embodiment of the present invention, FIG. 2 is a cross-sectional view showing a state in which the support is lowered in the apparatus of FIG. 3 is a cross-sectional view showing a state in which the supporting portion and the partition member are lowered in the apparatus of FIG. 1, FIG. 4 is an enlarged cross-sectional view showing the partition member of FIG. 1, FIG. 6 is an enlarged cross-sectional view showing a portion VI of FIG. 1, FIG. 7 is a cross-sectional view showing an enlarged portion of FIG. 1, and FIG. 8 is an enlarged perspective view of the shadow member of FIG. 1.

Referring to FIG. 1, the film forming apparatus 100 according to the present embodiment may include a chamber 110, a support 120, a partition member 130, a reaction gas supply 140, an insulation member 150, and a first lift. The unit 160, the second lifting unit 162, the stopper 170, the shadow member 180, and the RF applying unit 195 are included.

The chamber 110 is combined with the lead 111 to form an internal space into which the semiconductor substrate is loaded. An inlet 116 into which the reaction gas is introduced is formed at the top of the lid 111. In this embodiment, an exhaust port 118 through which reaction byproducts are discharged is formed at the bottom of the chamber 110. Since the exhaust port 118 is formed below the chamber 110, reaction by-products generated in the reaction chamber 112 to be described later may be easily discharged to the outside of the reaction chamber 112 through the exhaust port 118. Accordingly, the reaction by-products fall onto the semiconductor substrate, and there is no problem of causing a defect of the semiconductor substrate. In this embodiment, examples of the film to be formed on the semiconductor substrate include an amorphous carbon film, an amorphous fluorocarbon film, and the like. Here, the type of film to be formed on the semiconductor substrate using the apparatus 100 according to the present embodiment is not limited to the above described films.

The support part 120 supporting the semiconductor substrate is disposed in the chamber 110. The heater 121 is provided inside the support part 120 and heats the semiconductor substrate. An example of the heater 121 may be a heating coil. The lifting shaft 122 is connected to the bottom center of the support part 120. The first lifting unit 160 is mounted at the lower end of the lifting shaft 122 to raise and lower the lifting shaft 122. In this embodiment, an example of the first lifting unit 160 may be an air cylinder, a lead screw, or the like.

1 and 6, three first lifting passages 124 and three second lifting passages 126 are also formed along the direction perpendicular to the support 120. The first lifting passage 124 is disposed inside the support 120 than the second lifting passage 126. Three lift pins 128 for elevating the semiconductor substrate are inserted into and liftable into each of the first elevating passages 124. The upper end of the first lift passage 124 has a substantially funnel shape. The lift pin 128 has a head portion 129 shaped to be hung on and supported by an upper end of the funnel-shaped first lift passage 124.

1, 7 and 8, the shadow member 180 shields the edge of the semiconductor substrate to prevent the formation of an unwanted film on the edge of the semiconductor substrate. The shadow member 180 having such a function is a shadow ring 182 that shields the edge of the semiconductor substrate, and three lifts connected to the bottom of the shadow ring 182 to be lifted and inserted into the second lifting passage 126. Rods 184. In this embodiment, the elevating rod 184 may be detachably coupled to the underside of the shadow ring 182. Alternatively, the elevating rod 184 may be secured to the underside of the shadow ring 182. Here, the three lifting rods 184 are not arranged at equal intervals in order to prevent the semiconductor substrate carried into the reaction chamber 112 from being caught by the lifting rod 184. For example, the spacing between two lifting rods 184 of the three lifting rods 184 may be arranged at intervals longer than the width of the semiconductor substrate. On the other hand, in this embodiment, the lifting rod 184 has a longer length than the lift pin 128.

1 and 4, the partition member 130 partitions the internal space of the chamber 110 into the reaction chamber 112 and the non-reaction chamber 114. The support 120 is disposed in the reaction chamber 112. In addition, the partition member 130 is spaced apart from the support 120. That is, the partition member 130 is not in direct contact with the side and bottom surfaces of the support 120. Therefore, the amount of heat generated in the support 120 is transferred to the non-reaction chamber 114 through the partition member 130 is reduced. In this embodiment, the partition member 130 has a bowl shape that can be spaced apart from the side and bottom of the support 120. In addition, the partition member 130 has a cylindrical portion 132 into which the lifting shaft 122 of the support 120 is inserted to be liftable.

Again, referring to FIG. 1, the second lifting unit 162 is connected to the cylindrical portion 132 so that the partition member 130 is lifted by the second lifting unit 162. Therefore, since the partition member 130 is lifted up and down by the second lifter 162 and the supporter 120 is lifted by the first lifter 160, the partition member 130 and the supporter 120 are lifted separately. . As a result, the distance between the reaction gas supply unit 140 and the support unit 120 can be appropriately adjusted to meet the optimum process conditions using the first lift unit 160. In the present embodiment, the second lifting unit 162 may include a cylinder, a gear box for transmitting power of the cylinder to the cylinder unit 132, and the like.

The stopper 170 is horizontally disposed in the reaction chamber 112. The stopper 170 has a fixed rod 172 fixed to the chamber 110 through the partition member 130. The fixing rod 172 may be detachably coupled or fixed to the bottom of the stopper 170. The stopper 170 limits the lowering position of the shadow member 180 and the lift pin 128. In this embodiment, the stopper 170 has an approximately ring shape.

Meanwhile, the reaction gas supply unit 140 is disposed above the support unit 120. The reaction gas supply unit 140 is connected to the inlet 142. Therefore, a reaction chamber 112 is formed between the reaction gas supply unit 140 and the support unit 120, which is a space where a plasma is formed from the reaction gas. An RF applying unit 195 for applying RF power to the reaction gas is electrically connected to the reaction gas supply unit 140. Here, if the reaction gas supply unit 140 is a structure in which several components are assembled, problems such as arcing occur at the interface between the components to which RF power is applied. Therefore, the reaction gas supply unit 140 according to the present embodiment has an integrated structure composed of one member such that no interface exists in the reaction gas supply unit 140. On the other hand, in the present embodiment, the reaction gas supply unit 140 may include a shower head for uniformly dispersing the reaction gas on the semiconductor substrate.

1 and 5, the insulating member 150 is coupled to an upper end of the partition member 130. Specifically, the insulating member 150 is interposed between the lead 111 and the reaction gas supply unit 140 to separate the reaction gas supply unit 140 from the lead 111. The bottom surface of the insulating member 150 is coupled to the upper end of the partition member 130 so that the reaction gas in the reaction chamber 112 does not leak. In particular, the bottom surface of the insulating member 150 is positioned lower than the bottom surface of the reaction gas supply unit 140 to ensure electrical insulation of the reaction gas supply unit 140 to which RF power is applied. In the present embodiment, the material of the insulating member 150 may be alumina.

On the other hand, the inner surface of the insulating member 150 is exposed to the reaction chamber 112. As a result, the reaction chamber 112 is defined by the inner surface of the insulating member 150, the bottom surface of the reaction gas supply unit 140, and the surface of the support unit 120, and the non-reaction chamber ( Insulated from 114). The non-reaction chamber 114 corresponds to the remaining space of the internal space of the chamber 110 except for the reaction chamber 112. That is, the non-reaction chamber 114 is defined by the inner wall of the chamber 110 and the outer surface of the partition member 130.

Here, an abnormal deposition phenomenon occurs in a region where the temperature of the reaction chamber 112 is low, and it is not necessary to keep the temperature of the non-reaction chamber 114 the same as the temperature of the reaction chamber 112 in terms of process efficiency. Therefore, the optimum conditions for forming an amorphous carbon film or amorphous fluorocarbon film are to maintain the temperature of the reaction chamber 112 at 200 ° C or higher and the temperature of the non-reaction chamber 114 at about 70 ° C to 80 ° C. According to this embodiment, since the internal space of the chamber 110 is divided into the reaction chamber 112 and the non-reaction chamber 114, which are separated from each other, it is very preferable to set the temperature conditions without using a separate heating facility. It is easy.

In addition, in order to set the pressures of the reaction chamber 112 and the non-reaction chamber 114 differently, the first pressure control unit 190 for adjusting the pressure of the reaction chamber 112 is the reaction chamber 112. And a second pressure regulator for regulating the pressure in the non-reaction chamber 114 is disposed in the non-reaction chamber 114. In this embodiment, examples of the first pressure adjusting unit 190 include a pressure gauge such as a baratron gauge, a convectron gauge, or the like.

Meanwhile, the second pressure regulator is connected to the pressure gauge 192 attached to the inner wall of the non-reaction chamber 114 and the non-reaction chamber 114 to introduce an inert gas such as nitrogen gas into the non-reaction chamber 114. Gas line 119. By adjusting the amount of inert gas introduced into the non-reaction chamber 114 through the gas line 119, the pressure of the non-reaction chamber 114 can be adjusted to a desired state. In addition, when the reaction gas is introduced into the reaction chamber 112 in a state where the partition member 130 descends and the reaction chamber 112 and the non-reaction chamber 114 are in communication with each other, the inert gas is introduced into the gas line ( 119 may be introduced into the reaction chamber 112. The inert gas introduced into the reaction chamber 112 prevents formation of unwanted films by the reaction gas in the reaction chamber 112. As a result, since the cleaning cycle of the apparatus 110 can be extended, the operating efficiency of the apparatus 100 is improved. In addition, component damage of the device 100 due to undesired membranes is prevented, thereby extending the life of the device 110 components. As an example of the pressure gauge 192, a baratron gauge, a convectron gauge, etc. are mentioned.

In order to bring the semiconductor substrate into the reaction chamber 112, as shown in FIG. 3, the second lifting unit 162 lowers the partition member 130, and thus, between the partition member 130 and the insulating member 150. To form a passageway. Moreover, since the support part 120 is also lowered by the 1st lifting part 160, the lift pin 128 and the lifting rod 182 are supported on the stopper 170. As shown in FIG. That is, the lift pin 128 protrudes more than the surface of the support 120. In this state, the robot arm carries the semiconductor substrate into the reaction chamber 112, thereby placing the semiconductor substrate on the lift pin 128.

Subsequently, as shown in FIG. 2, the second lifting unit 162 raises the partition member 130 to couple the partition member 130 to the insulating member 150. Therefore, the inside of the chamber 110 is partitioned into the reaction chamber 112 and the non-reaction chamber 114 by the combined partition member 130 and the insulating member 150.

Subsequently, as shown in FIG. 1, the first lifting unit 160 raises the support 120. Since the lift pin 128 has a shorter length than the lifting rod 184, the support 120 raises the lift pin 128 first. Subsequently, the rising support 120 raises the shadow member 180. Therefore, the semiconductor substrate is placed on the surface of the support part 120, and the edge of the semiconductor substrate is shielded by the shadow member 180.

The reaction gas is introduced into the reaction chamber 112, and RF power is applied from the RF applying unit 195 to the reaction gas to form a plasma in the reaction chamber 112. Plasma is provided on the semiconductor substrate to form a desired film on the semiconductor substrate. Here, since the edge of the semiconductor substrate is shielded by the shadow member 180, the formation of an unwanted film on the edge of the semiconductor substrate is suppressed as much as possible.

As described above, according to the present invention, the partition member has a bowl shape spaced apart from the support, so that the partition member does not directly contact the support. Therefore, it is possible to reduce the extent to which the heat of the heater embedded in the support portion is lost to the non-reaction chamber through the partition member.

In addition, since the supporting portion and the partition member are each elevated by the elevating portions, the distance between the substrate and the reactive gas supply portion can be arbitrarily adjusted to suit the optimum process conditions.

As described above, although described with reference to preferred embodiments of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (12)

A chamber having an inner space into which the substrate is loaded; A partition member disposed in an inner space of the chamber and partitioning the inner space into a reaction chamber and a non-reaction chamber accommodating the substrate; A support part disposed in the reaction chamber to support the substrate; A reaction gas supply unit disposed above the support unit and configured to supply a reaction gas to the reaction chamber; An insulating member selectively coupled to the partition member to isolate the reaction chamber from the non-reaction chamber; A first elevating unit for elevating the support unit; And A second lifting part for lifting the partition member; The first lifting unit is connected to the lifting shaft of the support, And the partition member has a cylindrical portion in which the lifting shaft of the support portion is inserted into and liftable, and the second lifting portion is connected to the cylindrical portion. The film forming apparatus of claim 1, wherein the partition member has a bowl shape spaced apart from side and bottom surfaces of the support part. The film forming apparatus of claim 1, wherein the insulating member has a bottom surface positioned lower than a bottom surface of the reaction gas supply unit. The film forming apparatus according to claim 1, wherein the reaction gas supply unit has an integral structure composed of one member. A chamber having an inner space into which the substrate is loaded; A partition member disposed in an inner space of the chamber and partitioning the inner space into a reaction chamber and a non-reaction chamber accommodating the substrate; A support part disposed in the reaction chamber to support the substrate; A reaction gas supply unit disposed above the support unit and configured to supply a reaction gas to the reaction chamber; An insulating member selectively coupled to the partition member to isolate the reaction chamber from the non-reaction chamber; A first elevating unit for elevating the support unit; A second elevating unit for elevating the partition member; A first pressure control unit for adjusting the pressure of the reaction chamber; And A film forming apparatus comprising a second pressure control unit for adjusting the pressure of the non-reaction chamber. The method of claim 5, wherein the second pressure control unit A pressure gauge for measuring the pressure in the non-reaction chamber; And And a gas line for supplying an inert gas to the non-reaction chamber. 2. The apparatus of claim 1, further comprising: a lift pin inserted into the first lift passage formed in the support to lift and lower the board; A shadow member inserted into the second lifting passage formed in the support to be liftable and shielding an edge of the substrate to prevent an unwanted film from being deposited on the edge of the substrate; And And a stopper disposed in the reaction chamber, the stopper limiting a lowering position of the lift pin and the shadow member. 8. The film forming apparatus according to claim 7, wherein the lift pin includes a head portion having a width wider than an upper end of the first lifting passage. The method of claim 7, wherein the shadow member is A shadow ring shielding on an edge of the substrate; And And an elevating rod extending from an underside of the shadow ring and inserted into the second elevating passage so as to elevate. 10. The film forming apparatus according to claim 9, wherein the lifting rod has a length longer than that of the lift pin. 8. A film forming apparatus according to claim 7, wherein said stopper comprises a fixed rod fixed to said chamber through said partition member. The film forming apparatus of claim 1, further comprising a heater provided in the support part to heat the substrate.

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