TWI424515B - Apparatus for forming a layer - Google Patents

Description

Device for forming a material layer [Related application cross-reference]

This application is based on 35 USC § 119, which is based on Korean Patent Application No. 2007-11956, No. 2007-11964, which is filed on July 6, 2007 at the Korean Intellectual Property Office (KIPO). The contents of these Korean Patent Applications are hereby incorporated by reference in their entireties in their entireties.

An exemplary embodiment of the invention is directed to an apparatus for forming a layer of matter. More specifically, an exemplary embodiment of the present invention relates to an apparatus for forming a substance layer such as an amorphous carbon layer, an amorphous fluorocarbon layer, or the like on a semiconductor substrate.

At present, as semiconductor devices become increasingly highly integrated, the operating speed of semiconductor devices is also increasing proportionally. However, the high integration of semiconductor devices requires a narrow spacing between the metal lines. This can cause delays in the signal transmission between the wires. The signal delay can be caused by the parasitic capacitance of the insulating material and the high resistance of the metal lines.

In order to solve the signal delay, it is necessary to reduce the relative dielectric constant of the insulating layer or the resistance of the metal line. Therefore, methods for reducing the resistance of metal wires and the relative dielectric constant of insulating layers are being extensively studied. According to the presently proposed method, the metal wire utilizes copper and the insulating layer utilizes carbon or fluorocarbon.

The conductivity of copper is lower than that of aluminum. In addition, fluorine has a relatively high electronegativity. Therefore, copper and fluorine can reduce, for example, ruthenium oxide layer The relative dielectric constant of the insulating layer. However, the thermal stability of the insulating layer may decrease as the fluorine content increases. In order to overcome the above problems, carbon and fluorine may be added to the insulating layer. Here, since carbon has good thermal stability when the cross-linking ratio is increased, the insulating layer can be thermally stabilized and low relative by appropriately adjusting the ratio of fluorine to carbon addition. Electric constant.

An amorphous carbon layer having the above characteristics can be formed on a semiconductor substrate by a plasma-enhanced chemical vapor deposition (PECVD) apparatus. An example of a PECVD apparatus is disclosed in Korean Patent Laid-Open Publication No. 2003-41844.

A conventional PECVD apparatus may include a chamber, a partition member, a reactive gas supply member, a chuck, and an insulating member. This chamber has an internal space for loading a semiconductor substrate therein. A partition member is provided in the chamber for separating the internal space into a reaction zone and a non-reaction zone. A reaction gas supply member is placed above the partition member for supplying a reaction gas to the reaction zone. The chuck is disposed on the bottom surface of the partition member. In addition, a heater is built in the chuck. An inlet for introducing a reaction gas into the chamber and an outlet for discharging by-products are formed on the upper surface of the chamber. The insulating member has a fixing groove. The partition member has a projection that is embedded in the fixing groove. Here, the width of the fixing groove is slightly larger than the width of the protrusion.

The semiconductor substrate is placed on a chuck. The plasma generated by the reaction gas supplied from the reaction gas supply member is applied to the semiconductor substrate to form a substance layer such as an amorphous carbon layer, an amorphous fluorocarbon layer or the like on the semiconductor substrate.

In a conventional PECVD apparatus, a heater is placed on a partition member. That is, the heater directly contacts the partition member. Therefore, a large amount of heat generated by the heater can be transmitted to the non-reaction zone through the partition member, thereby causing the heater Heat loss is generated. The heat loss of the heater may correspond to the heat of reaction used to generate the plasma, such that a layer having the desired characteristics cannot be formed on the semiconductor device. Furthermore, the time to form a layer having a desired characteristic on a semiconductor device may become long.

Further, in the conventional PECVD apparatus, it may be difficult to control the distance between the reaction gas supply member and the heater. That is, the distance between the semiconductor substrate on the heater and the reaction gas supply member cannot be adjusted as needed. Therefore, the distance between the semiconductor substrate and the reaction gas supply member cannot be selected, and this pitch is one of the process conditions for forming the layer having the optimum characteristics. As a result, it may be difficult to form a layer having desired characteristics using a conventional PECVD apparatus.

As mentioned above, the upper surface of this chamber forms an outlet. Here, the position of the outlet may not be a substantial problem as long as the pressure in the chamber is maintained as a process condition. However, when a leak occurs in the chamber, the pressure in the chamber can be raised to atmospheric pressure, so that gravity can act on the inside of the chamber. Therefore, gravity can act on by-products discharged through the outlet of the upper surface of the chamber, so that by-products can adhere to the semiconductor substrate and the inner wall of the chamber. These by-products can act as particles and have a fatal effect on the operation of the semiconductor device.

Further, when the moving path of the reaction gas is shortened, the reaction gas can be suppressed from forming an unnecessary substance layer. However, in the conventional PECVD apparatus, the inlet is formed at the central portion of the upper surface of the chamber, and the outlet is formed at the edge portion of the upper surface of the chamber. Therefore, the reaction gas can flow through the longer path from the inlet to the outlet via the semiconductor substrate. This longer path can result in the formation of an undesired layer of material on the PECVD device elements located in this long path. Therefore, It is necessary to clean the room for a long time.

Moreover, when the reaction zone is opened, since the partition member or the insulating member is slightly moved, the projection may not be accurately embedded in the fixing groove, so that the projection may frequently collide with the insulating member. The collision between the partition member and the insulating member may locally damage the partition member and/or the insulating member. In addition, the particles generated by the collision between the partition member and the insulating member can function as particles and have a fatal effect on the operation of the semiconductor device.

Even if the projection can be accurately inserted into the fixing groove, it is possible to absorb the impact generated when the partition member and the insulating member are in contact with each other. Such an impact causes particles to be formed in the partition member and/or the insulating member.

Moreover, the partition member may be a unitary structure having only one element. Thus, when the portion of the partition member, particularly the partition member, which is combined with the insulating member is partially damaged, it may be necessary to replace a new partition member entirely.

An exemplary embodiment of the present invention provides an apparatus for forming a material layer capable of adjusting a gap between a heater and a reaction gas supply member as needed, and minimizing heat loss of the heater.

Exemplary embodiments of the present invention also provide an apparatus for forming a layer of matter having a discharge structure capable of suppressing absorption of by-products.

An exemplary embodiment of the present invention also provides an apparatus for forming a material layer capable of absorbing a contact impact between a partition member and an insulating member while preventing a collision between the partition member and the insulating member.

An exemplary embodiment of the present invention provides a device for forming a layer of matter. It is capable of replacing only the damaged portion even when the partition member is partially damaged.

According to an aspect of the invention, an apparatus for forming a material layer includes a chamber, a partition member, a support member, a reactive gas supply member, and an insulating member. This chamber has an internal space for loading the substrate. A partition member is disposed in the inner space of the chamber for separating the inner space into a reaction zone and a non-reaction zone for accommodating the substrate. A support member is placed in the reaction zone to support the substrate. A reaction gas supply member is placed on the support member to supply a reaction gas to the reaction zone. The insulating member is detachably coupled to the partition member to isolate the reaction zone from the non-reaction zone.

According to an exemplary embodiment of the present invention, the chamber may have an inlet and an outlet formed through the upper surface of the chamber and communicating with the reaction zone through which the reaction gas may flow to the reaction zone, the outlet being permeable to the chamber The lower surface is formed and can communicate with the non-reaction zone through which by-products can be discharged from the non-reaction zone. The outlet may be formed at a central portion of the lower surface of the chamber. A first discharge passage communicating with the reaction zone may be formed between the support member and the partition member. The partition member may have a fixing portion for inserting a lifting shaft of the support member therein. The fixed portion may have a second discharge passage in communication with the first discharge passage. Further, the partition member may have a support portion surrounding the lift shaft of the support member to support the partition member upward. The support portion may have a third discharge passage connected between the second passage and the outlet.

According to another exemplary embodiment of the present invention, the partition member may have an upward projection that closely contacts the lower surface of the insulating member. The insulating member may have a downwardly convex projection that closely contacts the upper surface of the partition member. Protruding upwards and downwards This is spaced apart to form a buffer space between the partition member and the insulating member. The device may further comprise an elastic member for absorbing an impact generated when the insulating member and the partition member are assembled with each other. The elastic member can be placed between the upwardly convex and downwardly convex projections. Alternatively, the elastic member may be embossed adjacently upwardly and built into the partition member or projected adjacent to the downward projection to be built into the insulating member.

According to still another exemplary embodiment of the present invention, the partition member may include a body portion and a joint detachably coupled to the upper end of the body portion. Furthermore, the device may comprise a seal placed between the joint of the partition member and the insulating member.

According to still another exemplary embodiment of the present invention, the apparatus may further include a first pressure controller for controlling the pressure of the reaction zone, and a second pressure controller for controlling the pressure of the non-reaction zone.

According to a further embodiment of the invention, the device may further comprise a lifting pin, a shielding member and a stop member. The lift pin is movably inserted into the first lift passage formed vertically through the support member to lift the substrate. The shielding member is movably inserted into the second lifting passage formed vertically through the supporting member. The shielding member may cover an edge portion of the substrate to prevent formation of an unnecessary layer on the edge portion of the substrate. A stop member can be disposed in the reaction zone to limit the lowermost position of the lift pin and the shield member.

Here, the lift pin may have a head having a width greater than a width of the upper portion of the first lift passage. The shielding member may include a shielding ring for covering the edge portion of the substrate, and a lifting rod extending from the lower surface of the shielding ring and movably inserted into the second lifting passage. The length of the lifting rod can be greater than the length of the lifting pin. Stop The piece may have a fixing rod fixed to the chamber through the partition member.

According to still another exemplary embodiment of the present invention, the apparatus may further include a first lifting unit for lifting the support member and a second lifting member for lifting the partition member.

According to still another exemplary embodiment of the present invention, the apparatus may further include a heater built in the support member for heating the substrate.

According to the present invention, the partition member can be spaced apart from the support member having the heater so as to suppress heat transfer from the heater to the partition member. In this way, the heater can be prevented from losing heat through the non-reaction zone. Further, since the partition member and the support member can be lifted by the lifting unit, the gap between the substrate on the support member and the reaction gas supply member can be appropriately adjusted in accordance with the optimum process conditions. Further, since the outlet is formed on the lower surface of the chamber, the by-product can be moved downward by gravity even if a leak occurs in the chamber. Therefore, by-products do not adhere to the substrate and/or the inner wall of the chamber. In particular, the outlet may be formed in the central portion of the lower surface of the chamber such that the reaction gas introduced into the chamber through the inlet may flow through the shortest path and may be discharged through the outlet. Therefore, unnecessary layers caused by by-products are not formed on the elements in this path. Further, since the buffer space can be formed between the protrusion of the upper portion of the partition member and the downward projection of the insulating member, the partition member and the insulating member do not collide with each other. Further, since the elastic member can be provided on the partition member and/or the insulating member, the contact impact between the partition member and the insulating member can be absorbed. In this way, the partition member and the insulating member are not damaged, so that particles which adversely affect the semiconductor process are not generated. Moreover, since the partition member may include two parts, such as a body portion and a joint portion, It is possible to replace only the joint that will frequently cause damage. Therefore, it is not necessary to replace the entire partition member, thereby reducing the cost of operating the device.

The invention will be described more fully hereinafter with reference to the accompanying drawings in which FIG. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments described herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention is fully disclosed. In the accompanying figures, the dimensions and the

It will be understood that when a component or layer is "on" or "connected" or "coupled" to another element or layer, it can be Coupled to another element or layer, there may also be intermediate elements or layers. In contrast, when an element is referred to as being "directly" or "directly connected" or "directly connected" or "directly coupled" to another element or layer. Throughout the specification, the same reference numerals refer to the same elements. The wording "and/or" used herein includes any and all combinations of one or more of the associated listed items.

It will be understood that, although the terms "first", "second", and the like may be used to describe various elements, components, regions, layers and/or sections, such elements, components, regions, layers and/or sections It should not be limited to these terms. The terms are only used to distinguish one element, component, region, layer, and/or section. The first element, component, region, layer, and/or section described below may be referred to as a second element, component, region, layer and/or section, without departing from the teachings of the present invention.

For ease of explanation, the spatially relative terms such as "below", "below", "lower", "above", "upper", etc. may be used to describe one element shown in the drawing or The relationship of features with respect to another (other) component or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation shown. For example, if the device in the figures is turned over, the elements described as "below" or "below" the other elements or features will subsequently become "above" other elements or features. Therefore, the typical term "below" can encompass both above and below. The device may be in other orientations (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein should accordingly be interpreted.

The terminology used herein is for the purpose of describing particular embodiments, The singular forms "a", "the" and "the" are intended to include the plural. It is further to be understood that the phrase "includes" or "includes" is used to mean the presence of the described features, integers, steps, operations, components, and/or components, but does not exclude the presence or addition of one or more The existence of other features, integers, steps, operations, components, components, and/or groups thereof.

Unless otherwise stated, all terms (including technical and scientific terms) used herein have the meanings of the ordinary skill in the art to which the invention pertains. It is further understood that, except as expressly indicated herein, each term (such as a term defined in a commonly used dictionary) should be considered to have the same meaning as in the related art background and should not be considered idealized or too Formal meaning.

Exemplary embodiment 1

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an apparatus for forming a material layer according to a first exemplary embodiment of the present invention, in which a support member and a partition member are lifted. Figure 2 is a cross-sectional view illustrating the apparatus of Figure 1, wherein the support member has been lowered; Figure 3 is a cross-sectional view illustrating the apparatus of Figure 2, wherein the support member and the partition member have been lowered; Figure 4 is a view of the partition member of Figure 1. Fig. 5 is an enlarged cross-sectional view showing a portion "V" of Fig. 1; Fig. 6 is an enlarged cross-sectional view showing a portion "VI" shown in Fig. 1, and Fig. 7 is a view showing a portion "VII" shown in Fig. 1. Fig. 8 is an enlarged cross-sectional view showing the shielding member shown in Fig. 1.

Referring to FIG. 1, an apparatus 100 for forming a material layer according to this exemplary embodiment includes a chamber 110, a support member 120, a partition member 130, a reactive gas supply member 140, an insulating member 150, a first lift unit 160, and a second lift unit 162. The stopper 170, the shielding member 180, and a radio frequency (RF) power source 195.

The chamber 110 is combined with the cover 111 to form an internal space for loading a semiconductor substrate therein. An inlet 116 is formed on the upper surface of the cover 111 for introducing a reaction gas into the internal space. In the exemplary embodiment, an outlet 118 is formed on the lower surface of chamber 110 for discharging by-products. Here, since the outlet 118 is disposed on the lower surface of the chamber 110, by-products generated in the reaction zone 112 shown hereinafter can be easily discharged to the outer side of the reaction zone 112 through the outlet 118. Therefore, the by-product does not fall onto the semiconductor substrate, so that germanium is not formed on the semiconductor substrate. In this exemplary embodiment, examples of the substance layer may include an amorphous carbon layer, an amorphous fluorocarbon layer, and the like. However, the type of material layer on the semiconductor substrate using the device 100 may not be limited to The above layers.

The support member 120 is disposed in the chamber 110 for supporting the semiconductor substrate. The heater 121 is built in the support member 120 for heating the semiconductor substrate. In the exemplary embodiment, an example of the heater 121 can include a heating coil. The lift shaft 122 is coupled to a central portion of the lower surface of the support member 120. The first lifting unit 160 is mounted on the lower end of the lifting shaft 122 for lifting the lifting shaft 122. In the exemplary embodiment, the first lifting unit 160 may include a pneumatic cylinder, a lead screw, or the like.

Referring to FIGS. 1 and 6 , three first lifting passages 124 and three second lifting passages 126 are formed vertically through the support member 120 . The first lifting passage 124 is provided at a central portion of the support member 120. The second lifting passage 126 is provided at an edge portion of the support member 120. Three lift pins 128 for lifting the semiconductor substrate are movably inserted into the first lift passage 124. In this exemplary embodiment, the first lift channel 124 can have a funnel-shaped upper end. Thus, each of the lift pins 128 can include a head 129 having a support shape that fits over the funnel-shaped upper end of the first lift channel 124.

Referring to Figures 1, 7, and 8, the shield member 180 covers the edge portion of the semiconductor substrate to prevent formation of an unnecessary layer on the edge portion of the semiconductor substrate. The shield member 180 includes a shadow ring 182 and three lift bars 184. The shadow ring 184 covers the edge portion of the semiconductor substrate. The lift bar 184 is coupled to the lower surface of the shadow ring 182. Additionally, the lift bar 184 is movably inserted into the second lift channel 126. In the exemplary embodiment, the lift bar 184 can be releasably coupled to the lower surface of the shadow ring 182. Alternatively, the lift bar 184 can be secured to the lower surface of the shadow ring 182. Here, to prevent loading in the reaction The semiconductor substrate in region 112 interferes with lift bar 184, and each lift bar 184 can be disposed at substantially the same distance. For example, the arrangement pitch of any two of the three lift rods 184 may be greater than the width of the semiconductor substrate. In this exemplary embodiment, the length of the lift bar 184 can be greater than the length of the lift pin 128.

Referring to FIGS. 1 and 4, the partition member 130 divides the internal space 110 of the chamber 110 into a reaction zone 112 and a non-reaction zone 114. Support member 120 is located within reaction zone 112. Further, the partition member 130 and the support member 120 are spaced apart from each other. That is, the partition member 130 does not directly contact the side surface and the bottom surface of the support member 120. Therefore, the heat transferred from the support member 120 to the non-reaction region 114 through the partition member 130 can be significantly reduced. In the exemplary embodiment, the partition member 130 may have a bowl shape that is spaced apart from the side and bottom surfaces of the support member 120. Further, the partition member 130 has a fixing portion 131, and the lift shaft 122 of the support member 120 is movably inserted into the fixing portion 131.

Referring again to FIG. 1, the second lifting unit 162 is coupled to the fixing portion 131 to lift the partition member 130. Therefore, since the second lifting unit 162 lifts the partition member and the first lifting unit 160 lifts the support member 120, the partition member 130 and the support member 120 are respectively lifted up. Thus, the gap between the reaction gas supply member 140 and the support member 120 can be appropriately adjusted by the first lifting unit 160 in accordance with the optimum process conditions. In the exemplary embodiment, the first lifting unit 160 and the second lifting unit 162 may include a pneumatic cylinder, a gear box for transmitting the pneumatic cylinder power to the fixed portion 131, and the like.

The stopper 170 is horizontally disposed in the reaction zone 112. The stopper 170 has a fixing rod 172 fixed to the chamber 110 through the partition member 130. on. In the exemplary embodiment, the fixed rod 172 is removably coupled to or secured to the lower surface of the stop 170. The stopper 170 limits the lowermost position of the shield member 180 and the lift pin 128. In this exemplary embodiment, the stop 170 can have a ring shape.

The reaction gas supply member 140 is placed on the support member 120. The reaction gas supply part 140 is connected to the inlet 142. Therefore, the reaction zone 112 for generating plasma from the reaction gas is formed between the reaction gas supply member 140 and the support member 120. An RF power source 195 for applying RF power to the reaction gas is electrically coupled to the reaction gas supply part 140. Here, when the structure of the reaction gas supply part 140 includes a plurality of parts, an arc can be generated at the interface of the parts to which the RF power is applied. Thus, the reactive gas supply member 140 can have a body containing only one element to prevent the formation of such an interface. In the exemplary embodiment, the reaction gas supply part 140 may include a shower head for uniformly distributing the reaction gas onto the semiconductor substrate.

Referring to Figures 1 and 5, the insulating member 150 is coupled to the upper end of the partition member 130. In the exemplary embodiment, the insulating member 150 is placed between the cover 111 and the reaction gas supply member 140 to separate the reaction gas supply member 140 from the cover 111. The lower surface of the insulating member 150 is combined with the upper end of the partition member 130 to prevent leakage of the reaction gas in the reaction zone 112. Specifically, the lower surface of the insulating member 150 is lower than the lower surface of the reaction gas supply member 140 to ensure electrical insulation of the reaction gas supply member 140 to which RF power is applied. In the exemplary embodiment, an example of a material that the insulating member 150 can use may include alumina.

The inner surface of the insulating member 150 is exposed to the reaction zone 112. As such, the reaction zone 112 is defined by the inner surface of the insulating member 150, the lower surface of the reactive gas supply member 140, and the upper surface of the support member 120. The reaction zone 112 is separated from the non-reaction zone 114 by an insulating member 150. The non-reaction zone 114 corresponds to a space other than the reaction zone 112 in the internal space. That is, the non-reaction zone 114 is defined by the inner wall of the chamber 110 and the outer surface of the partition member 130.

Here, abnormal deposition may occur in a portion of the reaction zone 112 that is relatively lower than other portions of the reaction zone 112. Moreover, due to process efficiency, it may not be necessary to maintain the temperature of the non-reactive zone 114 substantially the same as the temperature of the reaction zone 112. For example, to optimally form an amorphous carbon layer or an amorphous fluorocarbon layer, it may be desirable to maintain reaction zone 112 at a temperature of no less than about 200 ° C and non-reactive zone 114 of from about 70 ° C to about 80 ° C. temperature. In the exemplary embodiment, since the internal space of the chamber 110 is divided into the reaction zone 112 and the non-reaction zone 114 which are isolated from each other, the chamber 110 can be easily subjected to the above temperature conditions without using an additional heating element.

Further, in order to set the pressures of the reaction zone 112 and the non-reaction zone 114 to be different from each other, a first pressure controller 190 is provided in the reaction zone 112 for controlling the pressure of the reaction zone 112. A second pressure controller is provided in the non-reaction zone 114 for controlling the pressure of the non-reaction zone 114. In this exemplary embodiment, an example of the first pressure controller 190 can include a pressure gauge, such as a baratron pressure gauge, a convectron pressure gauge, and the like.

The second pressure controller includes a pressure gauge 192 mounted on the inner wall of the non-reaction zone 114, and a gas line 119 connected to the non-reaction zone 114, to introduce an inert gas such as nitrogen into the non-reaction zone 114. Therefore, the pressure of the non-reaction zone 114 can be properly controlled by adjusting the flow rate of the inert gas introduced into the non-reaction zone 114 through the gas line 119. Further, when the reaction gas is introduced into the reaction zone 112, and the reaction zone 112 and the non-reaction zone 114 are communicated with each other by lowering the partition member 130 or before and after the introduction of the reaction gas, the inert gas can be introduced into the reaction via the gas line 119. Area 112. The introduction of an inert gas into the reaction zone 112 prevents the reaction gas in the reaction zone 112 from forming an undesired layer. As such, the cleaning cycle of the device 100 can be extended to improve the operational efficiency of the device 100. In addition, component life can be extended since the undesired layers do not damage the components of device 100. In the exemplary embodiment, examples of the pressure gauge 192 may include a baratron pressure gauge, a convectron pressure gauge, and the like.

In order to load the semiconductor substrate in the reaction zone 112, as shown in FIG. 3, the second lifting unit 162 lowers the partition member 130 to form a passage between the insulating member 150 and the partition member 130. In addition, the first lifting unit 160 lowers the support member 120 to fix the lift pin 128 and the lift rod 184 to the stopper 170. That is, the lift pin 128 protrudes from the upper surface of the support member 120. Under such conditions, the robotic arm transports the semiconductor substrate into the reaction zone 112. The semiconductor substrate is then placed on the lift pins 128.

As shown in FIG. 2, the second lifting unit 162 lifts the partition member 130 to combine the partition member 130 with the insulating member 150. Thereby, the internal space of the chamber 110 is partitioned into the reaction zone 112 and the non-reaction zone 114 by bonding the partition member 130 and the insulating member 150 to each other.

As shown in FIG. 1, the first lifting unit 160 lifts the support member 120. Here, since the length of the lift pin 128 is shorter than the length of the lift rod 184, the support member lifts the lift pin 128 prior to the lift rod 184. The support member 120 that is continuously lifted raises the shield member 180. Therefore, the semiconductor substrate is placed on the support member 120. Further, the edge portion of the semiconductor substrate is covered to shield the member 180.

Then, a reaction gas is introduced into the reaction zone 112. RF power generated by the RF power source 195 is applied to the reaction gas to form a plasma in the reaction zone 112. A plasma is applied to the semiconductor substrate to form the desired layer on the semiconductor substrate. Here, since the shielding member 180 covers the edge portion of the semiconductor substrate, an unnecessary layer is not formed on the edge portion of the semiconductor substrate.

Exemplary embodiment 2

Figure 9 is a cross-sectional view illustrating an apparatus for forming a material layer according to a second exemplary embodiment of the present invention, wherein the support member and the partition member are lifted; Figure 10 is a cross-sectional view illustrating the apparatus of Figure 9, wherein the support member has been lowered; Figure 11 is a cross-sectional view showing the apparatus shown in Figure 9, in which the support member and the partition member have been lowered; and Figure 12 is an enlarged cross-sectional view showing the portion "XII" shown in Figure 9.

The apparatus 200 of the exemplary embodiment includes substantially the same elements as the apparatus 100 of Embodiment 1, except for the lower surface of the chamber 110. Therefore, the same component symbols are referred to the same components, and the same components will not be described again for the sake of brevity.

Referring to FIGS. 9 to 12, the chamber 110 is combined with the cover 111 to form an internal space for loading a semiconductor substrate therein. An inlet 116 for introducing a reaction gas into the internal space is formed on the upper surface of the chamber 110. For emissions An outlet 118 of by-products is formed on the lower surface of the chamber 110. A vacuum pump (not shown) can be connected to the outlet 118. Thus, even if a leak can occur in the chamber 110, gravity can be applied to the byproducts such that by-products can be discharged outside the chamber 110 via the outlet 118 on the lower surface of the chamber 110. Further, the outlet 118 is provided at a central portion of the lower surface of the chamber 110. Thus, by-products can flow from the inlet 116 to the outlet 118 along the shortest straight path. That is, the moving path of the reaction gas can be as short as possible. As such, unwanted layers are not formed on the components of device 200 that are in the path of motion.

The side surface of the support member 120 is spaced apart from the partition member 130 and the insulating member 150 to form a first discharge passage 113 between the support member and the partition member 130 and the insulating member 150. The by-products generated in the reaction zone 112 flow through the first discharge passage 113.

The partition member 130 has a fixing portion 131, and the lifting shaft 122 of the support member 120 is movably inserted through the fixing portion 131. The second discharge passage 138 is formed vertically through the fixing portion 131. The second discharge passage 138 communicates with the reaction zone 112. Therefore, the by-product flows through the second discharge passage 138. In this exemplary embodiment, the second discharge passage 138 can be disposed adjacent to the lift shaft 122 for the byproduct to have a shorter path of motion.

The support portion 115 is movably inserted into the lift shaft 122 to support the partition member 130 upward. The third discharge passage 117 is formed vertically through the support portion 115. The third discharge passage 117 is connected between the second discharge passage 117 and the outlet 118. Therefore, by-products generated in the reaction zone 112 can be quickly discharged to the outside of the chamber 110 via the first discharge passage 113, the second discharge passage 138, the third discharge passage 117, and the outlet 118.

According to this exemplary embodiment, since the outlet is formed on the lower surface of the chamber, the by-product can move toward the outlet under the action of gravity even if a leak occurs in the chamber. Therefore, by-products do not adhere to the inner walls of the semiconductor substrate and/or the chamber. Further, since the outlet is formed at the central portion of the lower surface of the chamber, the reaction gas introduced into the chamber through the inlet can be discharged to the outside through the shortest path. Therefore, unnecessary layers caused by by-products are not formed on the elements along the moving path.

Exemplary embodiment 3

Figure 13 is a cross-sectional view illustrating an apparatus for forming a material layer in accordance with a third exemplary embodiment of the present invention, wherein the support member and the partition member are lifted; Figure 14 is a cross-sectional view illustrating the apparatus of Figure 13, wherein the support member has been lowered; Figure 15 is a cross-sectional view showing the apparatus shown in Figure 13, wherein the support member and the partition member have been lowered; Figure 16 is an enlarged cross-sectional view showing the portion "XVI" shown in Figure 13, wherein the partition member and the insulating member are coupled to each other; 18 is an enlarged cross-sectional view illustrating another combined structure between the partition member and the insulating member.

The apparatus 300 of the exemplary embodiment includes substantially the same elements as the apparatus 100 of the embodiment 1, except for the combined structure between the partition member 130 and the insulating member 150. Therefore, the same component symbols are referred to the same components, and the same components will not be described again for the sake of brevity.

Referring to FIGS. 13 to 16, an upwardly facing projection 133 is formed on the upper surface of the partition member 130. The downward projection 152 is formed on the lower surface of the insulating member 150. Therefore, the upward convex 133 closely contacts the lower surface of the insulating member 150. The downward projection 152 closely contacts the upper surface of the partition member 130. To prevent it from being When the partition member 130 and the insulating member 150 are assembled to each other, the upward convex 133 and the downward convex 152 collide, and the upward convex 133 and the downward convex 152 are sufficiently spaced apart from each other in the horizontal direction, so that A buffer space is formed between the upward convex 133 and the downward convex 152.

In addition, the elastic member 156 may be built in the insulating member 150 to cause a contact impact when the partition member 130 and the insulating member 150 are assembled to each other. In this exemplary embodiment, the elastic member 156 can be advantageously placed in the insulating member 150 adjacent to the downward projection 152 due to the relationship of impact absorption efficiency.

Alternatively, as shown in FIG. 17, the elastic member 156 may be placed between the upward convex 133 and the downward convex 152. The resilient member 156 can have a contour along the lower surface of the insulating member 150 or along the upper surface of the partition member 130. Further, as shown in FIG. 18, the elastic member 156 may be built in the partition member 130. The elastic member 156 is advantageously placed in the partition member 130 adjacent to the upward projection 133 due to the relationship of the impact absorption efficiency.

Here, the elastic member 156 may be located at any two of the above three positions. For example, the resilient member 156 can include a first member that is built into the insulating member 150 and a second member that is placed between the upwardly facing projection 133 and the downwardly facing projection 152, or that includes the upwardly facing projection 133 and downward. a second member between the projections 152 and a third member built into the partition member 130, a first member built into the insulating member 150 and a third member built into the partition member 130, or a built-in A first member in the insulating member 150, a second member placed between the upwardly facing projection 133 and the downwardly facing projection 152, and a third member built into the partitioning member 130.

According to this exemplary embodiment, a buffer space can be formed between the upwardly convex projection of the partition member and the downward projection of the insulating member, so that the partition member and the insulating member do not collide with each other. Therefore, since the partition member and the insulating member are not damaged, particles which adversely affect the semiconductor substrate are not generated. The elastic member of the partition member and/or the insulating member can suppress damage to the partition member and the insulating member to prevent generation of particles.

Exemplary embodiment 4

Figure 19 is a cross-sectional view illustrating an apparatus for forming a substance layer according to a fourth exemplary embodiment of the present invention.

The apparatus 300a of this exemplary embodiment includes substantially the same elements as the apparatus 300 of Embodiment 3, except for the partition member 130 and the insulating member 150. Therefore, the same component symbols are referred to the same components, and the same components will not be described again for the sake of brevity.

Referring to Fig. 19, the partition member 130 and the insulating member 150 of the apparatus 300a of this exemplary embodiment do not have projections for forming a buffer space. Therefore, the entire upper surface of the partition member 130 closely contacts the entire lower surface of the insulating member 150. Alternatively, a projection (not shown) may be formed in the partition member 130 and a recess (not shown) for inserting the projection may be formed in the insulating member 150. In this case, a buffer space may not be formed between the partition member 130 and the insulating member 150.

In addition, the elastic member 156a may be placed between the partition member 130 and the insulating member 150. Alternatively, the resilient member 156a can be built into the insulating member 150 or the partition member 130. Further, the elastic member 156a may be located at any two of the above three positions.

Exemplary embodiment 5

Figure 20 is a cross-sectional view showing an apparatus for forming a substance layer according to a fifth exemplary embodiment of the present invention; Figure 21 is a cross-sectional view showing the apparatus shown in Figure 20, in which the support member has been lowered; and Figure 22 is a view showing the apparatus shown in Figure 20 Fig. 23 is an enlarged cross-sectional view showing the partition member of Fig. 20; Fig. 24 and Fig. 25 are cross-sectional views showing other layout structures of the elastic member in the apparatus shown in Fig. 20.

The apparatus 400 of the exemplary embodiment includes substantially the same elements as the apparatus 100 of Embodiment 1, except for the partition member 130 and the insulating member 150. Therefore, the same component symbols are referred to the same components, and the same components will not be described again for the sake of brevity.

Referring to FIGS. 20-23, the partition member 130 includes a body portion 132 and a joint portion 134 that is detachably coupled to the upper end of the body portion 132. That is, the partition member 130 includes two elements having a body portion 132 and a joint portion 134. The insulating member 150 is combined with the upper surface of the joint portion 134. Therefore, the joint portion 134 which is frequently damaged due to repeated assembly and disassembly between the partition member 130 and the insulating member 150 can be replaced with a new one without replacing the entire fastening member with a new one. In the exemplary embodiment, the body portion 132 and the joint portion 134 may be coupled to each other by means of engaging members such as bolts. Further, in order to seal the gap between the body portion 132 and the joint portion 134, a sealing member 136, such as an O-ring, may be placed between the body portion 132 and the joint portion 134.

In addition, the elastic member 156 may be built in the insulating member 150 to absorb the knot when the partition member 130 and the insulating member 150 are assembled to each other. The contact between the joint portion 134 and the insulating member 150 is impacted.

Alternatively, as shown in FIG. 24, the elastic member 156 may be placed between the partition member 130 and the insulating member 150. Further, the elastic member 156 may be built in the joint portion 134.

Here, the elastic member 156 may be located at any two of the above three positions. For example, the resilient member 156 can include a first component that is built into the insulating component 150 and a second component that is placed between the bond 134 and the insulating component 150, or a second component that is placed between the bond 134 and the insulating component 150. a third component built into the bonding portion 134, a first component built into the insulating component 150, and a third component built into the bonding portion 134, or a first component built into the insulating component 150. a second member placed between the joint portion 134 and the insulating member 150 and a third member built into the joint portion 134.

According to this exemplary embodiment, since the partition member can include two members having the body portion and the joint portion, only the frequently damaged joint portion can be replaced with a new one. In this way, it is not necessary to replace the partition member as a whole, thereby reducing the operating cost of the device.

Exemplary embodiment 6

Figure 26 is a cross-sectional view illustrating an apparatus for forming a material layer according to a sixth exemplary embodiment of the present invention.

Referring to Fig. 26, the apparatus 500 of the exemplary embodiment has a combined structure of the apparatuses 100, 200, 300, and 400 according to the embodiments 1, 3, 3, and 5, respectively. Therefore, the same component symbols are referred to the same components, and the same components will not be described again for the sake of brevity.

According to the present invention, the partition member can be spaced apart from the support member having the heater so that the partition member does not directly contact the support member. Therefore, it is possible to suppress the heater from losing heat through the partition member through the non-reaction area.

Further, since the partition member and the support member can be lifted by the lift unit, the gap between the substrate on the support member and the reaction gas supply member can be appropriately adjusted in accordance with the optimum process conditions.

Moreover, since the outlet is formed on the lower surface of the chamber, even if leakage may occur in the chamber, by-products may be moved downward toward the outlet by gravity. Therefore, by-products do not adhere to the inner walls of the substrate and/or chamber.

In particular, the outlet may be formed at a central portion of the lower surface of the chamber such that the reactant gas introduced into the chamber through the inlet may flow through the shortest path and may be discharged through the outlet. Therefore, unnecessary layers caused by by-products are not formed on the elements in the path.

Further, since the buffer space can be formed between the upper projection of the partition member and the downward projection of the insulating member, the partition member and the insulating member do not collide with each other.

Further, since the elastic member can be provided to the partition member and/or the insulating member, the contact impact between the partition member and the insulating member can be absorbed. In this way, the partition member and the insulating member are not damaged, so that particles which adversely affect the semiconductor process are not generated.

Moreover, since the partition member can include two parts, for example, the body portion and the joint portion, only the joint portion that can frequently cause damage can be replaced with a new one. Therefore, it is not necessary to replace the entire partition member, thereby reducing the operating cost of the device.

Although the preferred embodiment of the present invention has been described, it should be noted that those skilled in the art can make various modifications based on the above teachings. Change or change. Therefore, it is to be understood that the embodiments of the invention may be modified, and are within the scope and spirit of the invention as set forth in the appended claims.

100‧‧‧Devices for forming material layers

Room 110‧‧

111‧‧‧ Cover

112‧‧‧Reaction zone

113‧‧‧First discharge channel

114‧‧‧non-reactive zone

115‧‧‧Support

116‧‧‧ Entrance

117‧‧‧ Third discharge channel

118‧‧‧Export

119‧‧‧ gas pipeline

120‧‧‧Support parts

121‧‧‧heater

122‧‧‧ lifting shaft

124‧‧‧First ascension channel

126‧‧‧Second lifting channel

128‧‧‧Promotional sales

129‧‧‧ head

130‧‧‧Separate parts

131‧‧‧Fixed Department

132‧‧‧ Body Department

133‧‧‧ bulging upwards

134‧‧‧Combination Department

136‧‧‧ Sealing parts

138‧‧‧Second discharge channel

140‧‧‧Reactive gas supply parts

150‧‧‧Insulated parts

152‧‧‧ bulging down

156‧‧‧Flexible parts

160‧‧‧First Lifting Unit

162‧‧‧Second lifting unit

170‧‧‧stops

172‧‧‧Fixed rod

180‧‧‧Shielding parts

182‧‧‧ shadow ring

184‧‧‧ Lifting pole

190‧‧‧First pressure controller

192‧‧ ‧ pressure gauge

195‧‧‧RF (RF) power supply

200‧‧‧Devices for forming material layers

300‧‧‧Devices for forming material layers

300a‧‧‧Devices for the formation of material layers

400‧‧‧Devices for the formation of material layers

400a‧‧‧Devices for forming material layers

400b‧‧‧Devices for the formation of material layers

The above and other features and advantages of the present invention will become more apparent from the aspects of the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an apparatus for forming a material layer according to a first exemplary embodiment of the present invention, in which a support member and a partition member are lifted.

Figure 2 is a cross-sectional view illustrating the apparatus of Figure 1 with the support member lowered.

Figure 3 is a cross-sectional view illustrating the apparatus of Figure 2 with the support member and the partition member lowered.

Fig. 4 is an enlarged cross-sectional view showing the partition member shown in Fig. 1.

Fig. 5 is an enlarged cross-sectional view showing a portion "V" shown in Fig. 1.

Fig. 6 is an enlarged cross-sectional view showing a portion "VI" shown in Fig. 1.

Fig. 7 is an enlarged cross-sectional view showing a portion "VII" shown in Fig. 1.

Fig. 8 is an enlarged cross-sectional view showing the shielding member shown in Fig. 1.

Figure 9 is a cross-sectional view illustrating an apparatus for forming a material layer according to a second exemplary embodiment of the present invention, in which the support member and the partition member are lifted.

Figure 10 is a cross-sectional view illustrating the apparatus of Figure 9 with the support member lowered.

Figure 11 is a cross-sectional view illustrating the apparatus of Figure 9, in which the support member and the partition member have been lowered.

Fig. 12 is an enlarged cross-sectional view showing a portion "XII" shown in Fig. 9.

Figure 13 is a cross-sectional view illustrating an apparatus for forming a material layer according to a third exemplary embodiment of the present invention, in which the support member and the partition member are lifted.

Figure 14 is a cross-sectional view illustrating the apparatus of Figure 13 with the support member lowered.

Figure 15 is a cross-sectional view illustrating the apparatus of Figure 13 with the support member and the partition member lowered.

Fig. 16 is an enlarged cross-sectional view showing a portion "XVI" shown in Fig. 13, in which a partition member and an insulating member are coupled to each other.

17 and 18 are enlarged cross-sectional views illustrating other combined structures between the partition member and the insulating member.

Figure 19 is a cross-sectional view illustrating an apparatus for forming a substance layer according to a fourth exemplary embodiment of the present invention.

Figure 20 is a cross-sectional view illustrating an apparatus for forming a substance layer according to a fifth exemplary embodiment of the present invention.

Figure 21 is a cross-sectional view illustrating the apparatus of Figure 20 with the support member lowered.

Figure 22 is a cross-sectional view illustrating the apparatus of Figure 20 in which the support member and the partition member have been lowered.

Figure 23 is an enlarged cross-sectional view illustrating the partition member of Figure 20.

24 and 25 are cross-sectional views illustrating other layout configurations of the elastic members in the apparatus shown in Fig. 20. as well as

Figure 26 is a cross-sectional view illustrating an apparatus for forming a material layer according to a sixth exemplary embodiment of the present invention.

100‧‧‧Devices for forming material layers

110‧‧‧Include room

111‧‧‧ Cover

112‧‧‧Reaction zone

114‧‧‧non-reactive zone

116‧‧‧ Entrance

118‧‧‧Export

119‧‧‧ gas pipeline

120‧‧‧Support parts

121‧‧‧heater

122‧‧‧ lifting shaft

124‧‧‧First ascension channel

126‧‧‧Second lifting channel

128‧‧‧Promotional sales

130‧‧‧Separate parts

131‧‧‧Fixed Department

140‧‧‧Reactive gas supply parts

150‧‧‧Insulated parts

160‧‧‧First Lifting Unit

162‧‧‧Second lifting unit

170‧‧‧stops

172‧‧‧Fixed rod

180‧‧‧Shielding parts

182‧‧‧ shadow ring

184‧‧‧ Lifting pole

190‧‧‧First pressure controller

192‧‧ ‧ pressure gauge

195‧‧‧RF (RF) power supply

Claims (25)

An apparatus for forming a material layer, comprising: a chamber having an inner space for loading a substrate; a partition member disposed in the inner space of the chamber for partitioning the inner space into a housing a reaction zone of the substrate, and a non-reaction zone; a support member disposed in the reaction zone for supporting the substrate; a reaction gas supply component disposed on the support component for providing the reaction zone a reaction gas; and an insulating member removably coupled to the partition member to isolate the reaction zone from the non-reaction zone. The apparatus for forming a material layer according to claim 1, wherein the chamber further comprises: an inlet formed on an upper surface of the chamber and communicating with the reaction zone, wherein the reaction gas flows through the chamber And an outlet formed on a lower surface of the chamber and communicating with the non-reaction zone, and by-products generated by the reaction gas are discharged through the outlet. The apparatus for forming a material layer according to claim 2, wherein the outlet is located at a central portion of the lower surface of the chamber. The apparatus for forming a material layer according to claim 2, wherein a first discharge passage communicating with the reaction zone is formed between the support member and the partition member. The apparatus for forming a material layer according to claim 4, wherein the partitioning member includes a fixing portion, and the first discharge passage A communicating second discharge passage is formed through the fixed portion, and the support member has a lift shaft movably inserted into the fixed portion. The apparatus for forming a material layer according to claim 5, wherein the partitioning member further comprises a supporting portion surrounding the lifting shaft of the supporting member to support the partitioning member. The support portion has a third discharge passage connected between the second discharge passage and the outlet. The apparatus for forming a material layer according to claim 1, wherein the partition member has an upward projection that closely contacts a lower surface of the insulating member, and the insulating member has a close contact with the partition member. The upper surface is convex downward, and the upward convex and the downward convex are spaced apart from each other to form a buffer space between the partition member and the insulating member. The apparatus for forming a material layer according to claim 7, further comprising an elastic member for absorbing an impact generated when the insulating member and the partition member are assembled with each other. The apparatus for forming a material layer according to claim 8, wherein the elastic member is placed between the upward convex portion and the downward convex portion. The apparatus for forming a material layer according to claim 8, wherein the elastic member is built in the partition member adjacent to the upwardly convex portion. The apparatus for forming a material layer according to the invention of claim 8, wherein the elastic member is adjacent to the downward projection and built in the Inside the edge part. The apparatus for forming a material layer according to claim 1, wherein the partitioning member comprises: a body portion; and a joint portion detachably coupled to the upper surface of the body portion. The apparatus for forming a material layer according to claim 12, further comprising a sealing member placed between the joint portion of the partition member and the insulating member. The apparatus for forming a material layer according to claim 1, further comprising: a first lifting unit for lifting the supporting member; and a second lifting unit for lifting the partitioning member. The apparatus for forming a material layer according to claim 1, further comprising: a first pressure controller for controlling the pressure of the reaction zone; and a second pressure controller for controlling the non-pressure The pressure in the reaction zone. The apparatus for forming a material layer according to claim 1, further comprising: a lifting pin movably inserted into the first lifting passage formed through the supporting member to lift the substrate; a member movably inserted into the second lifting passage formed through the supporting member and covering an edge portion of the substrate to prevent formation of an unnecessary layer on the edge portion of the substrate; a blocking member disposed in the reaction zone to limit the lifting pin and The lowermost position of the shielding member. The apparatus for forming a material layer according to claim 16, wherein the lifting pin has a head, and a width of the head is greater than a width of an upper end of the first lifting passage. The apparatus for forming a material layer according to claim 16, wherein the shielding member comprises: a shielding ring covering the edge portion of the substrate; and a lifting rod from a lower surface of the shielding ring Extending and movably inserted into the second lifting channel. The apparatus for forming a material layer according to claim 18, wherein the length of the lifting rod is longer than the length of the lifting pin. A device for forming a material layer according to claim 16, wherein the stopper has a fixing rod that is fixed to the chamber through the partition member. The apparatus for forming a material layer according to claim 1, further comprising a heater built in the support member to heat the substrate. An apparatus for forming a material layer, comprising: a chamber having: an inner space for loading a substrate; an inlet formed on an upper surface of the chamber, a reaction gas flowing through the inlet; and an outlet formed in the chamber a lower surface through which the by-product produced by the reactive gas is discharged; a partition member disposed in the inner space of the chamber for partitioning the inner space to communicate with the inlet to accommodate Substrate reaction a region, and a non-reaction region that communicates with the outlet; a support member disposed in the reaction region for supporting the substrate, forming a communication between the support member and the partition member to communicate with the reaction region a discharge passage; a reaction gas supply member disposed on the support member for supplying a reaction gas to the reaction zone; and an insulating member removably coupled to the partition member to allow the reaction zone to The non-reaction zones are isolated from each other; a first lifting unit for lifting the support member; and a second lifting unit for lifting the partition member; wherein the partition member includes a body portion and a joint portion, the joint portion An upper surface and a surface detachably coupled to the upper surface of the body portion, the upper surface of the joint portion being formed with an upward convex surface in close contact with a lower surface of the insulating member; wherein the insulating The member has a downward projection that closely contacts the upper surface of the partition member; wherein the upward projection and the downward projection are spaced apart from each other to allow the partition member and the Buffer space is formed between the members. The apparatus for forming a material layer according to claim 22, wherein the partitioning member comprises: a fixing portion having a second discharge passage communicating with the first discharge passage, the support member having an movable portion a lifting shaft inserted into the fixing portion; and a supporting portion surrounding the lifting shaft of the supporting member to support the The partitioning member has a third discharge passage connected between the second discharge passage and the outlet. The apparatus for forming a material layer according to claim 22, further comprising: a first pressure controller for controlling the pressure of the reaction zone; and a second pressure controller for controlling the non- The pressure in the reaction zone. The apparatus for forming a material layer according to claim 22, further comprising: a lifting pin movably inserted into the first lifting passage formed through the supporting member to lift the substrate; a member movably inserted into the second lifting passage formed through the supporting member and covering an edge portion of the substrate to prevent formation of an unnecessary layer on the edge portion of the substrate; A blocking member is disposed in the reaction zone to limit a lowermost position of the lifting pin and the shielding member.