KR100980381B1 - Gas sealing apparatus and chemical vapor deposition reaction chamber apparatus using the same - Google Patents

Abstract

A gas seal that closes the two flat surfaces to prevent gas leakage is suggested. A representative application of the gas sealing apparatus according to the present invention is a reaction chamber for chemical vapor deposition. The gas sealing device according to the present invention is composed of an upper part and a lower part, and the lower part of the upper part and the upper part of the lower part form two flat surfaces, and means for bringing the two flat surfaces into close contact with each other according to the present invention. The inclination angle adjusting means for adjusting the inclination angle between these two flat surfaces and the driving device for driving the inclination angle adjusting means. The structure of the mechanical gas sealing device according to the present invention is simple and easy to drive, and the maintenance, repair and adjustment of the device is very simple.

Description

Gas sealing apparatus and chemical vapor deposition reaction chamber apparatus using the same

1 is a conceptual diagram of a conventional gas sealing device.

2 is a conceptual view for explaining the problem of the conventional gas sealing device.

3 is a conceptual diagram of a gas sealing apparatus according to an embodiment of the present invention.

4 is a conceptual diagram of a gas sealing apparatus according to another embodiment of the present invention.

5 is a conceptual perspective view of the gas sealing apparatus of FIG. 4.

FIG. 6 is an enlarged cross-sectional view of the inclination angle adjusting device that is part “A” of FIG. 5.

7 is a plan view conceptually illustrating a relative position of the support plate and the support rod of FIG. 5.

FIG. 8A is a conceptual diagram conceptually showing that the support rod is vertically positioned with respect to the support plate of FIG. 5.

FIG. 8B is a conceptual diagram showing that the support rod is inclined relatively by a given angle with respect to the support plate of FIG. 5.

9 is a conceptual diagram of another embodiment showing the relative position between the support plate and the support bar according to the present invention.                 

10 is a conceptual diagram of another embodiment showing the relative position between the support plate and the support bar according to the present invention.

11 is a conceptual diagram of another embodiment showing the relative position between the support plate and the support bar according to the present invention.

FIG. 12 is a cross-sectional view illustrating that the support plate and the support bar are vertically positioned in FIG. 11.

13 is a conceptual diagram of a chemical vapor reaction apparatus to which a gas sealing apparatus according to the present invention is applied.

14 is a conceptual diagram of a gas sealing apparatus according to another embodiment of the present invention.

15 is a conceptual diagram of a gas sealing apparatus according to another embodiment of the present invention.

The present invention relates to a gas sealing apparatus and a chemical vapor deposition reactor using the same, and more particularly, to a chemical vapor deposition reactor for performing a chemical vapor deposition reaction process in a reaction chamber maintained at high vacuum, for example. . However, the gas sealing device according to the present invention has various applications.

In particular, the chemical vapor deposition (CVD) method of forming a thin film on the surface of a substrate by supplying a gaseous raw material into a chemical vapor deposition reaction chamber in which the substrate is mounted, or etching the thin film formed on the surface of the substrate in a predetermined pattern. Plasma etching method is often used in the semiconductor manufacturing process. The chemical vapor deposition method is widely used because the step coverage is better than the physical vapor deposition method by sputtering, the damage of the substrate on which the thin film is deposited, and it is effective for mass production.

On the other hand, in order to precisely control the characteristics of the thin film formed on the substrate surface, a single wafer type is used in which one substrate is placed in a reaction chamber in which the same process conditions can be applied to each substrate. In single-sheet chemical vapor deposition, a robot is usually used to load and unload a substrate into the reaction chamber, which requires space for the robot to move.

However, in the chemical vapor deposition method in which a small amount of raw material gas is used to form a film having a desired thickness or the raw material gas is sequentially supplied, a reaction in which a substrate is mounted to accelerate the conversion of the raw material gas is particularly performed in ALD-Atomic Layer Deposition. There is a need to reduce the volume in the chamber. After the robot transfers the substrate into the reaction chamber with the lid open, the chamber is made to have a small volume of the reaction chamber to seal the reaction chamber, and the upper and lower portions of the reaction chamber are closely contacted to reduce the space on the substrate. The purpose of rapid gas shift can be achieved.

1 is a simple conceptual diagram showing the structure of a chemical vapor deposition reactor to achieve this object.

Referring to FIG. 1, a reaction chamber 240 is mounted in a main chamber 100 made of ceramic or the like, and the reaction chamber 240 has an upper portion of the reaction chamber to have a predetermined reaction chamber space 250 therein. 200 and the reaction chamber lower portion 300. On the upper surface of the lower part 300, the substrate 400 to be subjected to the chemical vapor deposition process is located, and the doors on the sidewalls of the vertically lifted lifter 370 and the main chamber 100 mounted at the center thereof are shown. The substrate 400 is loaded and unloaded by the robot. The lifter 370 is fixed to the bottom 302 of the main chamber 100 by the lifter support 380 and the lifter fixing device 390. The main chamber 100 is provided with an inlet port 110 through which an inert gas can be introduced and an outlet port 120 through which these gases can be discharged.

In the center of the upper portion 200 of the reaction chamber 240 is a gas inlet tube 230 through which the reaction gas is introduced, and the shower head 210 capable of dispersing the reactor gas on the upper side of the substrate 400 is a gas. It is mounted inside the cylindrical drum 220 which is an extension of the inlet pipe 230. The reaction gas introduced into the reaction chamber space 250 is the inner wall 202 of the upper portion of the reaction chamber 200, the outer wall 222 of the cylindrical drum 220, and the gas inflow as indicated by arrows after the chemical vapor deposition reaction is completed. It is discharged to the outside of the reaction chamber 240 by the discharge pump 140 through the gas discharge pipe 520 formed between the outer wall 232 of the pipe 230.

On the other hand, the lower portion 300 of the reaction chamber 240 moves up and down. The lower part 300 includes a fixed shaft 130 fixed to the bottom 150 of the main chamber 100, and a moving plate capable of vertically moving by the motor 360 and the motor shaft 350 along the fixed shaft. 340 and the drive shaft 330 which is fixed to the movable plate 340 to be moved up and down by the vertical movement of the movable plate 340, and the auxiliary support plate which is connected to and interlocked with the upper portion of the drive shaft 330. The lower portion 300 of the reaction chamber 240 is moved up and down by the reference numeral 320 and the fixing pin 310 that fixes the auxiliary support plate 320 and the reaction chamber lower portion 300.

Accordingly, as shown in FIG. 1, the reaction chamber upper part 200 and the lower part 300 are divided into two parts in the main chamber 100 so that the loading and unloading of the substrate 400 is easy. You can also switch quickly.

On the other hand, the upper portion 200 and the lower portion 300 of the reaction chamber 240 in close contact with each other in order to prevent unwanted membranes from forming on the outer walls 242 and 244 of the reaction chamber 240 due to leakage of the reactor body. Good adhesion is necessary to prevent the escape of gas into the gaps between the contact surfaces 246 and 248.

The main object of the present invention is to solve the gas outflow problem described above.

Figure 2 is a schematic diagram schematically illustrating the problem of the prior art.

In general, the flatness of the contact surfaces 246a and 248a in which the upper portion 200a and the lower portion 300a of the reaction chamber 240a fit by grinding a given material may be processed to 0.006 mm. When the flat surface is in close contact, a gap of up to 0.012 mm can be created, and the amount of gas that escapes through the gap is generally negligible. However, in the related art, in order for the upper part 200a and the lower part 300a of the reaction chamber 240a to move relatively, it is necessary to assemble the upper part 200a and the lower part 300a separately. Since the flat surfaces of the upper portion 200a and the lower portion 300a of the chamber cannot be perfectly parallel, the two flat surfaces form an angle θ1a greater than 0 °.

If two flat surfaces 246a and 248a at angles greater than 0 ° are brought into close contact with the existing motor 360a, the gas can be prevented from escaping due to the gap of the given angle θ1a as shown in the exaggerated view in FIG. The two flat surfaces 246a and 248a cannot be brought into close contact with each other. In the related art, the lower part 300a connected to the fixing pin 310a is vertically moved by the vertical movement of the auxiliary support plate 340a, which receives the driving force by the gear motor 360a and the driving shaft 350a. Since it moves only perpendicular to 248a, there is a gap as in FIG.

An intuitive solution is to use a micrometer to precisely adjust the angle of one flat surface to make it parallel to the other flat surface, but the process of adjusting the angle of the flat surface with a micrometer is cumbersome and difficult, and also the maintenance of the reaction chamber 240a device. There is a problem that must be repeated every time the device is disassembled and reassembled.

The technical problem to be achieved by the present invention is to provide a gas sealing device for preventing gas leakage by contacting two flat surfaces and a reaction device for chemical vapor deposition using the same.

The skeleton of the gas sealing device according to the present invention for achieving the technical problem to be achieved by the present invention, the first hollow surface having a first flat surface having a flat surface along the edge of the lower portion of the cylindrical shape open bottom And a second flat surface having a flat surface along the edge of the upper part of the hollow and open top of the cylindrical shape so as to maintain an internal space with the first flat surface of the first cylindrical shape. 2 a cylindrical shape, driving means capable of pressing or spaced apart from the second cylindrical shape with respect to the first cylindrical shape, and the second flat surface against the first flat surface by the driving means. It is composed of an inclination angle adjusting means for adjusting the inclination angle of the second cylindrical shape to be in close contact.

The inclination angle adjusting means may be a very rigid elastic body or a structure of a slightly movable joint that couples the second cylindrical shape and the driving means, and the driving means may include a gear motor, a hydraulic or pneumatic cylinder. Can be used, but a fluid cylinder using hydraulic or pneumatic is preferred.

Preferably, the inclination angle adjusting means is positioned at the center of the second cylindrical shape, and a plurality of the inclination angle adjusting means is disposed at equal intervals along the circumference of the lower portion of the second cylindrical shape.

On the other hand, the lower portion of the second cylindrical shape is provided with an auxiliary support plate fixedly coupled to the second cylindrical shape, the inclination angle adjusting means is disposed between the auxiliary support plate and the driving means. For example, the inclination angle adjusting means installed along the circumference may be independently controlled because the fluid cylinders are separately installed when disposed in three places, or controlled by interlocking three inclination angle adjusting means by one fluid cylinder. You may. The lower part and the auxiliary support plate are connected by one or more fixing pins.

As one example, the inclination angle adjusting means may use a general ball joint or universal joint. In addition, as another example, a new or more U-shaped nut (notch) is made around the auxiliary support plate, and then the support rod is mounted on the auxiliary support plate in a structure having a structure of screws and bolts and a locking jaw. You may comprise an inclination-angle adjustment means. As another example, an inclination angle having a structure of a cylindrical groove formed in a short cylinder shape from a lower portion of the auxiliary support plate, and a support rod having a cylindrical end of the support rod inserted into a cylindrical groove on the auxiliary support plate. The adjusting means may be used.

As another example, the inclined angle adjusting means has a half-cylindrical cylindrical groove from a lower portion of the auxiliary support plate, and an end thereof inserted into the cylindrical groove by the driving means has a structure of a hemispherical cylindrical supporting rod. Inclination angle adjustment means may be used. The inclined angle adjusting means may have a cylindrical groove formed in a lower portion of the auxiliary support plate, and a support rod made of a hemispherical cylinder whose end is inserted into the cylindrical groove.

The chemical vapor deposition reaction apparatus according to the present invention for achieving the technical problem of the present invention is composed of an upper portion and a lower portion, the upper portion of the inlet for the reaction gas is introduced into the reactor and the outlet for the reaction gas is discharged from the reactor A lower first flat surface along the columnar lower edge of the upper portion of the upper portion of the lower portion of the lower portion of the upper portion of the lower portion of the lower portion of the upper portion of the There is a second flat surface that is flat along the circumferential upper edge, and there is a driving means for crimping or separating the lower portion of the reaction chamber in correspondence with the upper portion of the reaction chamber, and corresponding to the first flat surface by the driving means. The reaction chamber to seal the reactor space by closely contacting the second flat surface. The tilt angle adjustment, which can adjust the angle of inclination of the lower portion means the reaction apparatus has.

The upper part and the lower part of the reaction chamber are provided in the main chamber, the upper part is fixed to the upper part of the main chamber, and the lower part is provided in the lower part of the main chamber. The loading / unloading mechanism for loading / unloading a wafer or a substrate in the center of the main chamber is additionally installed. Finally, a lifter for loading and unloading the wafer is additionally installed. .

According to the present invention, even after the upper part and the lower part of the reaction chamber are first contacted by the inclination angle adjusting means, the driving force of the driving means is transmitted to the inclination angle adjusting means so that the flat surface of the upper part and the lower part is compressed to be in close contact with the gas from the reaction chamber. Is blocked from entering.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic view showing a gas sealing apparatus according to an embodiment of the present invention.

Referring to FIG. 3, even though the two flat surfaces 246b and 248b of the upper portion 200b and the lower portion 300b of the reaction chamber 250b are not completely in contact with each other, as shown by a dotted line, the user may have a lower portion. The inclination angle adjusting means 620b installed at the bottom center portion 300b of the 300b and the inclination angle θ1b of the lower portion 300b to the driving means 600b are adjusted to be in close contact with each other in the direction of the arrow. In the present embodiment, the inclination angle adjusting means 620b may be a mechanical inclination angle adjusting means such as a ball joint or a universal joint, or may be made of a rigid rubber or an elastic body such as a stiff spring. In addition, various inclination-angle adjustment means as shown to FIG. 6, 9, 10, 11 mentioned later can also be employ | adopted.

The driving means 600b usable in this embodiment may use a general gear motor, or a combination of a spring and a gear motor, or a general fluid cylinder using pneumatic or hydraulic pressure. The driving means 600b and the inclination angle adjusting means 620b are connected to the driving shaft 610b.

The upper portion 200b and the lower portion 300b are circular, but are not necessarily limited thereto. The upper portion 200b and the lower portion 300b may be formed in various shapes such as an ellipse, a hexagon, and a hexagon.

Figure 4 is a schematic view showing a gas sealing device according to another embodiment of the present invention, Figure 5 is a perspective view showing a part of the gas sealing device of Figure 4, Figure 6 is a "A" portion of the inclination angle adjusting device of FIG. It is an enlarged cross section. 7 is a plan view schematically illustrating the support plate and the support rod of FIG. 4, and FIG. 8A is a view showing that the support rod is vertically positioned with respect to the support plate of FIG. 4, and FIG. 8B is a constant support rod with respect to the support plate of FIG. 4. The figure shows that the position is inclined by an angle.

Referring to FIG. 4, even when the upper part 200c and the lower part 300c of the reaction chamber 250c contact each other, as shown by a dotted line, even if the two flat surfaces 246c and 248c are not completely in contact with each other, The flat surface 248c of the lower portion 300c by the inclination angle adjusting means 710c, 717c, 720c installed along the edge of the auxiliary support plate 730c fixed by the fixing pins 310c at the lower portion of the 300c. The inclination angle of is adjusted by the drive device 700c to be in full contact with the arrow direction as indicated by the solid line.

4 and 5, in the present embodiment, a disk-shaped auxiliary support plate 730c fixed by a fixing pin 310c is installed at a lower portion of the lower portion 300c of the reaction chamber 250c. Three inclination angle adjusting means 710c, 717c, and 720c are provided at regular equal intervals, that is, 120 °, along the circumference of the auxiliary support plate 730c. Here, the inclination angle adjusting means does not necessarily have to be configured at equal intervals. In particular, when the auxiliary support plate 730c is in a shape other than circular, it is preferable to find and arrange the optimum position. In the present embodiment, the inclination angle adjusting means is indicated by A in FIG. 5, and FIG. 6 is a detailed view of A. FIG. A support rod 710c is inserted into the through groove 715c formed along the edge of the auxiliary support plate 730c, and the support rod 710c is connected to the fluid cylinder. The support rod 710c includes an assembly composed of a stopper 716c, a sealant (not shown), and a first fixing screw 713c that are caught by the through groove 715c formed in the auxiliary supporting plate 730c. 720c is coupled to the end of the support rod 710c passing through the through groove 714c, the second fixing screw 717c is installed to prevent the support rod 710c from being separated from the through groove 714c.

7 shows a through groove 715c disposed in the auxiliary support plate 730c and a support rod 710c positioned in the through groove. The interval between the side wall of the through groove 715c and the supporting rod 710c is indicated as "d1c" (denoted as "d11c" in FIG. 8A). This gap is a limited tolerance element that allows the support rod 710c to move in the through groove in the auxiliary support plate 730c, and the thickness t of the auxiliary support plate 730c in FIG. 8A. Relationship is

                     tan θ = (2 × d11c) ÷ t

An inclination angle of the auxiliary support plate 730c, ie, the lower portion 300c of the reaction chamber 250c, may be adjusted by the angle θ defined as. For example, if d11c is 0.05 mm, the thickness t of the auxiliary support plate 730c is 10 mm, and the distance between the two inclination angle adjusting means or the distance from the initial contact point to the opposite side is 300 mm, the lower part 300c When the flat surface of is inclined by the angle θ2c with respect to the flat surface of the upper portion 200c, the lower portion 300c may move up to a maximum of 3mm.

On the other hand, when the assembly error between the upper flat surface 246c and the lower flat surface 248c of the reaction chamber device 250c intended to be parallel is smaller than this, the tilt angle adjusting means A and the drive of the present invention are simply driven. By simply pushing the lower portion 300c to the upper portion 200c by means of the means 700c, the two flat surfaces 246c and 248c can be brought into close contact with each other.

On the other hand, when the temperature of the auxiliary support plate 730c changes, the auxiliary support plate extends outward from the center or decreases inward. Therefore, even if the auxiliary support plate 730c is deformed due to heat, there is sufficient play in the center direction of the auxiliary support plate so that the support rod 710c does not interfere with the movement of the lower flat surface 248c. The support rod can move freely from the center outward. When the shape of the auxiliary support plate is radially symmetrical like a circle, the interval "d11c" hardly changes even when the temperature is changed because the shape of the auxiliary support plate is changed in the radially symmetrical direction by heat.

When the lower portion 300c needs to be heated, it is necessary to prevent the heat from escaping by installing the fixing pin 310c. In this case, the heat loss can be reduced by fixing the auxiliary support plate 730c to the lower portion 300c through the fixing pin 310c so that the heat transfer to the auxiliary support plate 730c is minimized in the portion including the lower flat surface. If there is no problem of heat loss or heat deformation, the auxiliary support plate 730c and the lower portion 300c may be formed without dividing the lower portion 300c, and the groove may be directly connected to the lower portion of the support rod 710c.

Meanwhile, according to the present invention, a fluid cylinder is used as the driving means 700c of the auxiliary supporting plate 730c in FIG. 4, and the fluid cylinders may be independently configured in three inclination angle adjusting means installed in each of the three places. It is also possible to use one fluid cylinder and control the three tilt angle adjusting means in conjunction with each other.

9, 10 and 11 are views showing other embodiments of the inclination angle adjusting means 750c composed of the auxiliary support plate 730c and the support rod 710c in FIGS. 4 and 5 according to the present invention.

FIG. 9 is a view showing an embodiment of an inclination angle adjusting means 750d having a hemispherical cylindrical groove 731d formed at a lower side of the auxiliary supporting plate 730d and a hemispherical end of the auxiliary supporting rod 710d. Referring to FIG. 10, a semi-cylindrical, T-shaped cylindrical groove 732 is formed below the auxiliary support plate 730e, and the end of the supporting rod 710e is formed in a T-shaped cylindrical shape 718e corresponding to the groove. Is an embodiment of the inclination angle adjusting means (750e) made.

FIG. 11 shows another embodiment of another inclination angle adjusting means 750f according to the present invention, which makes a half cylinder shaped groove 733f at the lower side of the auxiliary support plate 730f, and the end of the auxiliary support rod 710f. It is made of a cylindrical cylinder 718f. 12 is a cross-sectional view of the inclination angle adjusting means 750f shown in FIG.

13 is a schematic view showing a chemical vapor deposition reactor to which the gas sealing apparatus according to the present invention is applied. FIG. 13 is a view illustrating a vertical driving means of a lower portion 300 of a reaction chamber in the chemical vapor deposition reactor of FIG. Since the driving principle is as described above, detailed description thereof will be omitted.

According to the present embodiment, in Fig. 13, the flatness of the flat surfaces of the upper portion 1200 and the lower portion 1300 is processed to 0.006 mm, the inner diameter is about 200 mm, and the reaction chamber inner volume 1250 is 160 ml. After configuring 1240, the outside of the reaction chamber 1240 was kept at atmospheric pressure, and the exhaust gas was evacuated with a vacuum pump having a volume of 300 liters per minute to lower the pressure of the reaction chamber to 10 ^-7 torr.

Meanwhile, a trench (not shown) is dug in the edge of one of the flat surfaces 1246 and 1248 of the lower part 1300 and the upper part 1200, and a protrusion is formed at the edge of the other flat surface. Making (凸) (not shown) can effectively reduce the leakage of gas by sealing the interior space twice. In addition, when the operating temperature of the device is not high, it is possible to further reduce the leakage of gas by inserting an elastic body where the groove and the protrusion meet.

According to the present invention, the application and modification of the gas sealing device is very wide. Some examples of the modification are, first of all, in order to improve the degree of sealing and to control the degree of sealing, for example, when the size of the substrate is large, the number of auxiliary supporting rods 710g is doubled as illustrated in FIG. By doing so, the sealing effect can be increased a lot. Here, by changing the size of the support (310g) and the auxiliary support rod (710g), the number of stiffness driving device, the thickness of the auxiliary support plate (730g) can be made a structure that can achieve various purposes.

As another example, when the substrate is rectangular, the reaction chamber may be formed in a rectangular shape as illustrated in FIG. 15. Of course, by adjusting the thickness and thickness of the support rods (710s), fixing pins (310s), auxiliary support pins (720s) can achieve the desired purpose.

Of course, it is possible to play a lot of sealing effects by making grooves and protrusions having irregular shapes in the upper and lower flat surfaces of the upper part of the reaction chamber and mounting sealing rings if necessary.

Gas seals can be round, oval, square, rectangular, hexagonal, or the like. For example, in the manufacturing process of LCDs, square or rectangular shapes are preferred.

As described above, in principle, the reaction chamber apparatus of the present invention using "joints" closely adheres the two flat surfaces by simply pushing the lower flat surface to correspond to the upper flat surface, so that the gas is introduced into the gap. Can prevent leakage.

The present invention is not limited to the above embodiments, and it is apparent that many modifications can be envisioned by those skilled in the art within the technical spirit of the present invention.

Claims (33)

A first cylindrical container having a first cylindrical surface flat along an edge of a ring-shaped bottom portion, the first cylindrical container having a bottom open; A second flat surface flat along an edge of a ring-shaped upper portion of the hollow cylindrical container having an upper portion open to maintain an internal space corresponding to the first flat surface of the first cylindrical shape; Having a second cylindrical shape; Drive means capable of compressing or spaced apart the second cylindrical shape with respect to the first cylindrical shape; And An inclination angle positioned between the second cylindrical shape and the driving means, the inclination angle of the second cylindrical flat surface being adjusted to closely contact the second flat surface with respect to the first flat surface by the driving means; Gas seal device comprising a control means. The gas sealing device according to claim 1, wherein the inclination angle adjusting means is a stiff elastic body. The gas sealing device according to claim 1, wherein the driving means is a gear motor or a fluid cylinder. The gas sealing apparatus according to claim 1, wherein the inclination angle adjusting means is a joint having an error tolerance for coupling the second cylindrical shape and the driving means. The gas sealing apparatus according to claim 4, wherein the inclination angle adjusting means is a ball joint or a universal joint. The gas sealing apparatus according to claim 1, wherein the inclination angle adjusting means is located at a central portion of the second cylindrical shape. 7. The gas sealing apparatus according to claim 6, further comprising guide means for guiding the movement of the second cylindrical shape along the moving direction of the second cylindrical shape. The gas sealing apparatus according to claim 1, wherein the inclination angle adjusting means is disposed in a plurality at regular intervals along the lower periphery of the second cylindrical shape. According to claim 1, wherein the lower side of the second cylindrical shape is further provided with an auxiliary support plate fixedly coupled to the second cylindrical shape, the inclination angle adjusting means is disposed between the auxiliary support plate and the driving means Gas seal. 10. The gas sealing apparatus according to claim 9, wherein the inclination angle adjusting means is disposed at three locations at regular intervals along the lower periphery of the auxiliary supporting plate. 11. A gas sealing device according to claim 10, wherein said drive means is a fluid cylinder. 12. The gas sealing apparatus according to claim 11, wherein each of the inclination angle adjusting means disposed in the three places is independently provided with a fluid cylinder and controlled independently. 12. The gas sealing apparatus according to claim 11, wherein the inclination angle adjusting means disposed in the three places is controlled in cooperation with one fluid cylinder. The method of claim 10, wherein the inclination angle adjusting means is a through groove penetrating through the auxiliary support plate, and the locking jaw is caught on the lower side of the auxiliary support plate when passing through the through groove by the drive means is moved between the through grooves; Gas seal device comprising a support rod formed. The method of claim 10, wherein the inclination angle adjusting means comprises a hemispherical groove formed in a hemispherical shape from the lower side of the auxiliary support plate, and is inserted into the hemispherical groove by the drive means, the end of the hemispherical support rod characterized in that it comprises Gas seal. 11. The method of claim 10, wherein the inclination angle adjusting means comprises a cylindrical groove in the form of a half cylinder from the lower side of the auxiliary support plate, and the support rod is inserted into the cylindrical groove by the driving means and the end is hemispherical Gas seal. The support rod according to claim 10, wherein the inclination angle adjusting means includes a hemispherical groove formed in a hemispherical shape from a lower side of the auxiliary support plate, and a T-shaped cylinder having a hemispherical end thereof inserted into the hemispherical groove by the driving means. Gas sealing device comprising a. The gas sealing apparatus of claim 1, wherein the opposing surfaces of the first flat surface and the second flat surface further include depressions and protrusions engaged with each other to form a pair. An upper portion of an inlet through which the source gas flows into the reaction chamber and a discharge outlet through which the gas is discharged from the reaction chamber, each having a lower first flat surface along its edge and having a hollow cylindrical shape; A reaction having a second flat surface flat along the upper edge of the hollow cylindrical shape and having a top open so as to maintain a space in which a chemical vapor reaction process can proceed in response to the first flat surface of the upper portion of the reaction chamber; Lower part of the chamber; Driving means capable of compressing or separating the reaction chamber lower portion from the upper portion of the reaction chamber; And An inclination angle adjustment between the lower portion of the reaction chamber and the driving means, the inclination angle of the lower portion of the reaction chamber being adjusted to closely contact the second flat surface with respect to the first flat surface by the driving means; A chemical vapor deposition reactor comprising means. 20. The chemical vapor deposition reactor according to claim 19, wherein upper and lower portions of the reaction chamber are installed in the main chamber, and the upper portion is fixed to the main chamber. 20. The chemical vapor deposition reactor as claimed in claim 19, wherein a mounting portion for mounting a substrate is further formed at a central portion of the lower portion, and a lifter for loading and unloading the substrate is further provided. 20. The chemical vapor deposition reactor as claimed in claim 19, wherein the inclination angle adjusting means is a stiff elastomer. 20. The chemical vapor deposition reactor according to claim 19, wherein the inclination angle adjusting means is a joint having an error tolerance for coupling the lower portion and the driving means. 20. The chemical vapor phase reactor according to claim 19, wherein the lower portion is circular and the inclination angle adjusting means is disposed in a plurality at regular intervals along the lower periphery of the lower portion. 20. The chemical vapor deposition reactor as claimed in claim 19, further comprising an auxiliary support plate fixedly coupled to the lower part of the lower part, wherein the inclination angle adjusting means is disposed between the auxiliary support plate and the driving means. . 27. The chemical vapor phase reactor according to claim 25, wherein the inclination angle adjusting means is disposed in three places at regular intervals in the circumferential direction along the lower periphery of the auxiliary supporting plate. 27. The chemical vapor deposition reactor as recited in claim 26, wherein the driving means is a fluid cylinder, and each of the inclination angle adjusting means disposed at the three locations is independently provided with a fluid cylinder. 27. The chemical vapor phase reactor according to claim 26, wherein the inclination angle adjusting means disposed at the three locations is controlled by one fluid cylinder. 26. The method of claim 25, wherein the inclination angle adjusting means is a through groove penetrating through the auxiliary support plate, and moving between the through groove by the driving means and the engaging jaw is caught on the lower side of the auxiliary support plate when passing through the through groove; Chemical vapor deposition reactor comprising a support rod formed. 26. The chemical vapor phase of claim 25, wherein the inclination angle adjusting means includes a hemispherical groove formed in a hemispherical shape from the lower side of the auxiliary support plate, and a support rod inserted into the hemispherical groove by the driving means and having a hemispherical end thereof. Deposition reactor. 26. The method according to claim 25, wherein the inclination angle adjusting means has a cylindrical groove in the form of a quarter hemispherical circle cylinder from the lower side of the auxiliary support plate, and is inserted into the cylinder groove by the driving means, and the tip is T-shaped. The chemical vapor deposition reactor, characterized in that the cylinder is attached to the end of the hemispherical support rod. 26. The method according to claim 25, wherein the inclination angle adjusting means includes a hemispherical groove formed in a hemispherical shape from the lower side of the auxiliary support plate, and a support rod inserted into the hemispherical groove by the driving means and having a hemispherical cylindrical end thereof. Chemical vapor phase reactor. 20. The chemical vapor phase reactor according to claim 19, wherein the opposing surfaces of the first flat surface and the second flat surface further include depressions and protrusions engaged with each other to form a pair.

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