CN114807906B

CN114807906B - Atomic layer deposition equipment

Info

Publication number: CN114807906B
Application number: CN202210732352.0A
Authority: CN
Inventors: 万军; 兰丽丽
Original assignee: Jiangsu Yiwen Microelectronics Technology Co Ltd; Advanced Materials Technology and Engineering Inc
Current assignee: Wuxi Yiwen Microelectronics Technology Co ltd; Jiangsu Yiwen Microelectronics Technology Co Ltd
Priority date: 2022-06-27
Filing date: 2022-06-27
Publication date: 2022-09-16
Anticipated expiration: 2042-06-27
Also published as: CN114807906A

Abstract

The invention discloses atomic layer deposition equipment, and relates to the technical field of semiconductors. The atomic layer deposition equipment comprises a driving piece, a lifting plate, a deposition chamber, a first sample table, a second sample table, a first elastic piece, a second elastic piece, a first diffusion shell and a second diffusion shell. The driving piece is connected with the lifting plate, the first sample platform is connected with the lifting plate through the first elastic piece, the second sample platform is connected with the lifting plate through the second elastic piece, the first diffusion shell and the second diffusion shell are fixedly installed in the deposition chamber, the driving piece can continue to drive the lifting plate to rise after the first sample platform and the first diffusion shell are abutted, until the second sample platform and the second diffusion shell are abutted, the first elastic piece is used for continuing to drive the lifting plate to rise in the process of the driving piece to generate compression deformation. The atomic layer deposition equipment provided by the invention can realize deposition and coating of two wafers at the same time, has high deposition efficiency, high sealing performance and good deposition effect, and is convenient to maintain.

Description

Atomic layer deposition equipment

Technical Field

The invention relates to the technical field of semiconductors, in particular to atomic layer deposition equipment.

Background

At present, with the continuous development of semiconductor technology, the feature size of the integrated device based on microstructure is reduced to submicron and nanometer level in further miniaturization and integration. In the atomic layer deposition process, the Plasma Enhanced Atomic Layer Deposition (PEALD) technology not only retains many advantages of the conventional Thermal Atomic Layer Deposition (TALD), but also has the advantages of lower deposition temperature, higher deposition speed, and the like, and thus is favored by more and more enterprises. However, the existing plasma enhanced atomic layer deposition equipment can only realize deposition coating of one wafer at a time, and the deposition efficiency is low. Although the double-chamber deposition device is provided in US20220037169a1, the deposition chamber is movably connected with the lifting sample table, so that the sealing performance is poor, and the mutual leakage of the external gas in the deposition chamber is easy to occur, thereby affecting the deposition effect.

In addition, during the deposition process, because the deposition phenomenon is possibly generated on each plane in the deposition chamber, the deposition phenomenon generated outside the sample stage can further aggravate the deposition phenomenon of the non-substrate part, and the deposition uniformity of the substrate can be seriously influenced. Therefore, the deposition apparatus needs to be cleaned and maintained by a technician on a regular basis.

In view of the above, it is important to design and manufacture an atomic layer deposition apparatus with high deposition efficiency, good deposition effect and easy maintenance, especially in the semiconductor process.

Disclosure of Invention

The invention aims to provide atomic layer deposition equipment which can simultaneously realize deposition and coating of two wafers, has high deposition efficiency, high sealing performance, good deposition effect and convenience in maintenance.

The invention is realized by adopting the following technical scheme.

An atomic layer deposition device comprises a driving part, a lifting plate, a deposition chamber, a first sample stage, a second sample stage, a first elastic part, a second elastic part, a first diffusion shell and a second diffusion shell, wherein the driving part is connected with the lifting plate, the first sample stage is connected with the lifting plate through the first elastic part, the second sample stage is connected with the lifting plate through the second elastic part, the first diffusion shell and the second diffusion shell are both fixedly arranged in the deposition chamber, the driving part can continue to drive the lifting plate to lift after the first sample stage is abutted against the first diffusion shell until the second sample stage is abutted against the second diffusion shell, so that first diffusion shell encloses into first sealed cavity jointly with first sample platform to make second diffusion shell and second sample platform enclose into second sealed cavity jointly, first elastic component is used for taking place compression deformation in the in-process that the driving piece continues to drive the lifter plate to rise.

Optionally, the first sample stage is provided with a support column, the lifting plate is provided with a limit hole, the support column is slidably arranged in the limit hole, the first elastic piece is sleeved outside the support column, and the first elastic piece is abutted against the lifting plate.

Optionally, a bump is disposed on the circumferential surface of the supporting column, and one end of the elastic member, which is far away from the lifting plate, abuts against the bump.

Optionally, the atomic layer deposition device further includes a fixing cylinder, the fixing cylinder is sleeved outside the supporting column and connected to the lifting plate, a positioning groove is formed in one end, away from the lifting plate, of the fixing cylinder, the protruding block is matched with the positioning groove, the first elastic element is arranged between the fixing cylinder and the supporting column, and the fixing cylinder is used for limiting the first elastic element.

Optionally, a through groove is further formed in one end, away from the lifting plate, of the fixed cylinder, and the through groove is used for the lug to pass through.

Optionally, the number of the protruding blocks, the positioning grooves and the through grooves is two, the two protruding blocks are oppositely arranged on two sides of the supporting column, the two positioning grooves and the two through grooves are arranged on the inner wall of the fixed cylinder in an annular array, and a connecting line of the two positioning grooves is perpendicular to a connecting line of the two through grooves.

Optionally, the fixed cylinder is provided with a first flange, the first flange is provided with a through hole, the lifting plate is provided with a threaded hole, and the threaded hole is used for being matched with a screw passing through the through hole so as to fix the relative position of the first flange and the lifting plate.

Optionally, the atomic layer deposition device further comprises a cavity cover, a first ionization cylinder and a second ionization cylinder, the first ionization cylinder and the second ionization cylinder are both fixedly mounted in the cavity cover, the cavity cover is hinged to the deposition chamber, and the cavity cover can be covered on the deposition chamber to enable the first ionization cylinder to be communicated with the first diffusion shell and enable the second ionization cylinder to be communicated with the second diffusion shell.

Optionally, the atomic layer deposition device further includes a welding bellows, one end of the welding bellows is connected to the first diffusion shell, and the other end of the welding bellows abuts against the first ionization cylinder.

Optionally, the atomic layer deposition apparatus further includes a screw and a third elastic member, the first diffusion shell is provided with a second flange, the two ends of the welding bellows are provided with a third flange and a fourth flange opposite to each other, the screw sequentially passes through the second flange and the third flange and is in threaded connection with the fourth flange, the third elastic member is sleeved outside the screw, and one end of the third elastic member abuts against the third flange and the other end abuts against the fourth flange.

The atomic layer deposition equipment provided by the invention has the following beneficial effects:

according to the atomic layer deposition equipment provided by the invention, the driving piece is connected with the lifting plate, the first sample platform is connected with the lifting plate through the first elastic piece, the second sample platform is connected with the lifting plate through the second elastic piece, the first diffusion shell and the second diffusion shell are fixedly arranged in the deposition chamber, the driving piece can continue to drive the lifting plate to rise after the first sample platform is abutted against the first diffusion shell until the second sample platform is abutted against the second diffusion shell, so that the first diffusion shell and the first sample platform jointly enclose a first sealed cavity, the second diffusion shell and the second sample platform jointly enclose a second sealed cavity, and the first elastic piece is used for generating compression deformation in the process that the driving piece continues to drive the lifting plate to rise. Compared with the prior art, the atomic layer deposition equipment provided by the invention adopts the first sample stage connected with the lifting plate through the first elastic part and the second sample stage connected with the lifting plate through the second elastic part, so that deposition coating of two wafers can be simultaneously realized, the deposition efficiency is effectively improved, the high sealing performance is ensured, the condition of internal and external gas leakage is avoided, and the deposition effect is ensured.

Furthermore, the atomic layer deposition equipment provided by the invention uses the diffusion shell to abut against the sample table in the deposition chamber to form the sealed cavity, so that the diffusion range of gas in the deposition chamber is further limited, the deposition reaction is concentrated in the sample table area, the deposition effect is improved, and the maintenance frequency is reduced. In addition, the structure can enable the diffusion shell to be quickly separated from or folded with the sample table, and cleaning and maintenance are facilitated.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of an atomic layer deposition apparatus according to an embodiment of the present invention when a chamber cover is closed;

FIG. 2 is a schematic structural diagram of an atomic layer deposition apparatus according to an embodiment of the present invention when a chamber cover is opened;

FIG. 3 is a schematic structural diagram of a chamber cover and a first ionization cylinder of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a first sample stage and a lift plate in an atomic layer deposition apparatus according to an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of a first sample stage of an atomic layer deposition apparatus according to an embodiment of the invention;

fig. 6 is a schematic structural diagram of a fixed cylinder in an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of a connection between a first diffusion shell and a welding bellows in an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a lift plate in an atomic layer deposition apparatus according to an embodiment of the invention.

Icon: a 100-atomic layer deposition device; 110-a drive member; 120-a lifter plate; 121-a limiting hole; 122-a threaded hole; 123-auxiliary heating wire; 130-a deposition chamber; 131-a main heating wire; 140-first sample station; 141-support columns; 142-a bump; 150-a second sample stage; 160-a first elastic member; 170-a second elastic member; 180-a first diffusion shell; 181-a first sealed cavity; 182-a second flange; 190-a second diffusion shell; 191-a second sealed cavity; 200-a chamber cover; 210-a first ionization cylinder; 211-a first plasma generator; 220-a second ionization cylinder; 221-a second plasma generator; 230-a stationary cartridge; 231-a positioning groove; 232-through groove; 233-a first flange; 234-a via; 240-welding the bellows; 241-a third flange plate; 242-a fourth flange; 250-a screw; 260-a third elastic member; 300-wafer.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "inside", "outside", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally put in use of products of the present invention, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," "mounted," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Some embodiments of the invention are described in detail below with reference to the accompanying drawings. Features in the embodiments described below may be combined with each other without conflict.

Referring to fig. 1, fig. 2 and fig. 3, an atomic layer deposition apparatus 100 for coating a film on a wafer 300 by atomic layer deposition is provided in an embodiment of the present invention. The deposition coating of two wafers 300 can be realized simultaneously, the sealing performance is high while the deposition efficiency is high, the deposition effect is good, and the maintenance is convenient.

It should be noted that, when the atomic layer deposition apparatus 100 is applied to a plasma enhanced atomic layer deposition process, the atomic layer deposition apparatus 100 can ionize a process gas into a plasma gas, and make the plasma gas uniformly adsorbed on the surface of the wafer 300, so as to implement a function of coating a film on the wafer 300.

The ald apparatus 100 includes a driving member 110, a lifting plate 120, a deposition chamber 130, a first sample stage 140, a second sample stage 150, a first elastic member 160, a second elastic member 170, a first diffusion housing 180, a second diffusion housing 190, a chamber cover 200, a first ionization cylinder 210, and a second ionization cylinder 220. The driving member 110 is connected to the lifting plate 120, the lifting plate 120 is horizontally disposed, and the driving member 110 can drive the lifting plate 120 to ascend or descend. The first sample stage 140 is connected to the lifting plate 120 via a first elastic member 160, the second sample stage 150 is connected to the lifting plate 120 via a second elastic member 170, and both the first sample stage 140 and the second sample stage 150 are disposed above the lifting plate 120. First diffusion shell 180 and second diffusion shell 190 set up at the interval, and equal fixed mounting in depositing chamber 130, and first diffusion shell 180 and second diffusion shell 190 all set up in the top of lifter plate 120. The driving member 110 is used for synchronously driving the first sample stage 140 and the second sample stage 150 to ascend through the lifting plate 120, so that the first sample stage 140 abuts against the first diffusion shell 180 to form a first sealed cavity 181, and the second sample stage 150 abuts against the second diffusion shell 190 to form a second sealed cavity 191. The first sample stage 140 and the second sample stage 150 are respectively used for carrying one wafer 300, and the atomic layer deposition apparatus 100 can simultaneously perform atomic layer deposition on two wafers 300 in the first sealed cavity 181 and the second sealed cavity 191, so as to improve the deposition efficiency.

It should be noted that, in the process that the driving member 110 drives the lifting plate 120 to lift upwards, the lifting plate 120 drives the first sample stage 140 and the second sample stage 150 to move upwards synchronously, and in this process, due to the influences of processing errors, control errors, installation errors and the like, the first sample stage 140 and the second sample stage 150 cannot be abutted against the first diffusion shell 180 and the second diffusion shell 190 at the same time, and it cannot be ensured that the first sealed cavity 181 and the second sealed cavity 191 are sealed at the same time. In this embodiment, the first sample stage 140 and the second sample stage 150 are both elastically connected to the lifting plate 120, and the driving member 110 can continue to drive the lifting plate 120 to rise after the first sample stage 140 abuts against the first diffusion shell 180 until the second sample stage 150 abuts against the second diffusion shell 190, so that the first diffusion shell 180 and the first sample stage 140 jointly enclose the first sealed cavity 181, and the second diffusion shell 190 and the second sample stage 150 jointly enclose the second sealed cavity 191. The first elastic member 160 is used for generating compression deformation in the process that the driving member 110 continues to drive the lifting plate 120 to lift, so as to compensate position accuracy, ensure that the first sealing cavity 181 and the second sealing cavity 191 have good sealing performance, avoid the occurrence of internal and external gas leakage, and improve the deposition effect.

Similarly, the driving member 110 can continue to drive the lifting plate 120 to rise after the second sample stage 150 abuts against the second diffusion shell 190 until the first sample stage 140 abuts against the first diffusion shell 180, so that the first diffusion shell 180 and the first sample stage 140 jointly enclose the first sealed cavity 181, and the second diffusion shell 190 and the second sample stage 150 jointly enclose the second sealed cavity 191. The second elastic member 170 is used for generating compression deformation in the process that the driving member 110 continues to drive the lifting plate 120 to lift, so as to compensate position accuracy, ensure that the first sealing cavity 181 and the second sealing cavity 191 have good sealing performance, avoid the occurrence of internal and external gas leakage, and improve the deposition effect.

It is noted that in the dual chamber deposition apparatus provided in US20220037169a1, the sample stage is lifted or lowered in the deposition chamber by the lifting column, and during this process, the lifting column is in sliding fit with the bottom wall of the deposition chamber, so that a gap is inevitably generated between the lifting column and the bottom wall of the deposition chamber, and the gas in the deposition chamber can leak outwards through the gap, which results in poor sealing performance and affects the deposition effect. In the invention, the driving member 110 drives the first diffusion shell 180 to abut against the first sample stage 140 through the lifting plate 120, and forms the first sealed cavity 181, and drives the second sample stage 150 to abut against the second diffusion shell 190, and forms the second sealed cavity 191, the first diffusion shell 180 does not displace relative to the first sample stage 140 in the deposition process, and the second diffusion shell 190 does not displace relative to the second sample stage 150, so as to ensure the sealing performance of the first sealed cavity 181 and the second sealed cavity 191, and improve the deposition effect.

Further, the first sealed cavity 181 and the second sealed cavity 191 are both disposed in the deposition chamber 130 to form an inner cavity structure and an outer cavity structure, and the volumes of the first sealed cavity 181 and the second sealed cavity 191 are both small to limit the diffusion range of the gas in the first sealed cavity 181 and the second sealed cavity 191, so that the deposition reaction is concentrated on the first sample stage 140 and the second sample stage 150, that is, on the wafer 300 placed on the first sample stage 140 and the second sample stage 150, and thus, the deposition effect can be further improved, and the maintenance frequency can be reduced. In addition, the first sample stage 140 and the second sample stage 150 can be quickly separated from or folded with the first diffusion case 180 and the second diffusion case 190 under the driving of the driving member 110, so that the cleaning and maintenance are facilitated.

It should be noted that, the first ionization cylinder 210 and the second ionization cylinder 220 are both fixedly installed in the cavity cover 200, the cavity cover 200 is hinged to the deposition chamber 130, and the cavity cover 200 can rotate relative to the deposition chamber 130, so as to facilitate disassembly and maintenance. The chamber cover 200 can cover the deposition chamber 130, so that the first ionization cylinder 210 is communicated with the first diffusion shell 180, and the second ionization cylinder 220 is communicated with the second diffusion shell 190, thereby facilitating deposition of the wafer 300. Specifically, the cavity cover 200 can drive the first ionization cylinder 210 and the second ionization cylinder 220 to be quickly separated from or folded with the first diffusion shell 180 and the second diffusion shell 190, so that the atomic layer deposition equipment 100 has separability, the complete machine can be prevented from being detached when deep maintenance is needed, and the maintenance efficiency of the atomic layer deposition equipment 100 is greatly improved.

In this embodiment, the first ionization cylinder 210 is internally provided with a first plasma generator 211, the first plasma generator 211 is configured to ionize the process gas to change the process gas into a plasma gas, the plasma gas flows from the first ionization cylinder 210 into the first diffusion shell 180 under the action of the air pressure, and performs atomic layer deposition on the wafer 300 placed on the first sample stage 140, and in this process, the first diffusion shell 180 diffuses the plasma gas to make the plasma gas be saturated and adsorbed on the surface of the wafer 300, so as to realize a uniform deposition function.

Similarly, a second plasma generator 221 is disposed in the second ionization cylinder 220, the second plasma generator 221 is configured to ionize the process gas to change the process gas into a plasma gas, the plasma gas flows from the second ionization cylinder 220 into the second diffusion shell 190 under the action of the gas pressure, and performs atomic layer deposition on the wafer 300 placed on the second sample stage 150, in this process, the second diffusion shell 190 diffuses the plasma gas, so that the plasma gas is saturated and adsorbed on the surface of the wafer 300, and a uniform deposition function is achieved.

Referring to fig. 4, 5 and 6, it should be noted that the first sample stage 140 is provided with a supporting column 141, the lifting plate 120 is provided with a limiting hole 121, the supporting column 141 is slidably disposed in the limiting hole 121, the supporting column 141 can slide in the limiting hole 121, and the limiting hole 121 is used for limiting and guiding the supporting column 141. Specifically, the first elastic member 160 is a spring, the first elastic member 160 is sleeved outside the supporting column 141, the supporting column 141 is used for limiting the first elastic member 160, the first elastic member 160 abuts against the lifting plate 120, the first elastic member 160 is always in a compressed state, and the lifting plate 120 can apply an abutting force to the first sample stage 140 through the first elastic member 160 to drive the first sample stage 140 to be lifted upwards.

In this embodiment, the circumferential surface of the supporting column 141 is provided with a bump 142, one end of the first elastic member 160 away from the lifting plate 120 abuts against the bump 142, and the first elastic member 160 is disposed between the bump 142 and the lifting plate 120, so as to realize the elastic connection between the first sample stage 140 and the lifting plate 120. Specifically, when the lifting plate 120 drives the first sample stage 140 to lift upwards, the lifting plate 120 applies an upward pushing force to the protrusion 142 through the first elastic member 160 to drive the whole first sample stage 140 to move upwards; when the first sample stage 140 abuts against the first diffusion case 180 and the lifting plate 120 continues to lift upward, the first sample stage 140 remains stationary, and the lifting plate 120 slides upward relative to the supporting column 141, at which time the first elastic member 160 is pressed and deformed.

It should be noted that the atomic layer deposition apparatus 100 further includes two fixed cylinders 230, wherein one fixed cylinder 230 is engaged with the first sample stage 140, and the other fixed cylinder 230 is engaged with the second sample stage 150. Specifically, taking the fixed cylinder 230 and the first sample stage 140 as an example for illustration, the fixed cylinder 230 is sleeved outside the supporting pillar 141 and connected to the lifting plate 120, a positioning groove 231 is formed at an end of the fixed cylinder 230 away from the lifting plate 120, and the protrusion 142 is matched with the positioning groove 231 to prevent the supporting pillar 141 from coming out of the position-limiting hole 121. The first elastic member 160 is disposed between the fixed cylinder 230 and the supporting column 141, and the fixed cylinder 230 is used for limiting the first elastic member 160. When the lifting plate 120 descends downwards, the fixed cylinder 230 moves downwards synchronously, and in the process, the fixed cylinder 230 drives the supporting column 141 to move downwards through the matching of the projection 142 and the positioning groove 231, so as to drive the whole first sample table 140 to descend downwards, and the cleaning and maintenance are convenient.

Further, the fixing cylinder 230 is detachably connected to the lifting plate 120, a through groove 232 is further formed in one end, away from the lifting plate 120, of the fixing cylinder 230, the through groove 232 and the positioning groove 231 are arranged at an interval, and the through groove 232 is used for the protruding block 142 to pass through, so that the lifting plate 120 and the first sample table 140 can be disassembled and assembled, and a quick-disassembling function can be achieved.

In this embodiment, the number of the protrusions 142, the positioning grooves 231, and the through grooves 232 is two, the two protrusions 142 are disposed on two sides of the supporting column 141, the two positioning grooves 231 and the two through grooves 232 are disposed on the inner wall of the fixing cylinder 230 in an annular array, and a connection line of the two positioning grooves 231 is perpendicular to a connection line of the two through grooves 232. Each projection 142 is engaged with one of the positioning grooves 231 when the lifting plate 120 is coupled to the first sample stage 140; when the lifting plate 120 is detached from the first sample station 140, each of the protrusions 142 passes through one of the through slots 232.

In this embodiment, the fixing cylinder 230 is provided with a first flange 233, the first flange 233 is provided with a through hole 234, the lifting plate 120 is provided with a threaded hole 122, the threaded hole 122 is used for being matched with a screw passing through the through hole 234, and the screw can pass through the through hole 234 and is screwed up relative to the threaded hole 122 so as to fix the relative position of the first flange 233 and the lifting plate 120 and prevent the fixing cylinder 230 from displacing relative to the lifting plate 120.

It is noted that, in the process of disassembling the lifting plate 120 and the first sample stage 140, the screws are first loosened; then, the fixed cylinder 230 is rotated to make the projection 142 come out of the positioning slot 231 and make the position of the projection 142 align with the position of the through slot 232; the lifting plate 120 is then moved away from the first sample stage 140 such that the tab 142 passes through the through slot 232, thereby enabling the lifting plate 120 and the first sample stage 140 to be removed.

In the process of connecting the lifting plate 120 and the first sample stage 140, the first elastic member 160 and the fixing tube 230 are firstly sleeved outside the supporting column 141; then the fixed cylinder 230 is rotated to align the position of the projection 142 with the position of the through slot 232; then, the fixed cylinder 230 is moved toward the first sample stage 140, so that the projection 142 passes through the through slot 232; then, the fixing cylinder 230 is rotated to make the projection 142 fit the positioning groove 231; finally, the supporting column 141 is inserted into the limiting hole 121, and the fixing cylinder 230 and the lifting plate 120 are connected by a screw, so that the lifting plate 120 and the first sample stage 140 are connected.

It should be noted that the specific structure of the connection between the second sample stage 150 and the lifting plate 120 is the same as the specific structure of the connection between the first sample stage 140 and the lifting plate 120, and is not described herein again.

Referring to fig. 7, in the embodiment, the atomic layer deposition apparatus 100 further includes two welding bellows 240, wherein one welding bellows 240 is connected to the first diffusion shell 180, and the other welding bellows 240 is connected to the second diffusion shell 190. Specifically, the welding bellows 240 is connected to the first diffusion shell 180 as an example, one end of the welding bellows 240 is connected to the first diffusion shell 180, the other end of the welding bellows 240 abuts against the first ionization cylinder 210, the upper plane of the welding bellows 240 is attached to the first ionization cylinder 210, and the lower plane of the welding bellows 240 is attached to the first diffusion shell 180, so as to improve the sealing effect, and the welding bellows 240 has strong high temperature resistance, good corrosion resistance, durability, reliability, and no pollution in the chamber.

It is noted that the atomic layer deposition apparatus 100 further includes a screw 250 and a third elastic member 260. The first diffusion shell 180 is provided with a second flange 182, the two ends of the welding corrugated tube 240 are oppositely provided with a third flange 241 and a fourth flange 242, the screw 250 sequentially passes through the second flange 182 and the third flange 241 and is in threaded connection with the fourth flange 242 so as to fix the relative positions of the first diffusion shell 180 and the welding corrugated tube 240, prevent the first diffusion shell 180 from displacing relative to the welding corrugated tube 240, and enable the plasma gas output by the first ionization tube 210 to flow into the first diffusion shell 180 through the welding corrugated tube 240.

In this embodiment, the third elastic member 260 is sleeved outside the screw 250, one end of the third elastic member 260 abuts against the third flange 241, the other end abuts against the fourth flange 242, the third elastic member 260 is always in a compressed state, and the third elastic member 260 is used for resetting the welding bellows 240. Specifically, in the process that the chamber cover 200 closes the deposition chamber 130, the chamber cover 200 rotates relative to the deposition chamber 130, the chamber cover is disposed on the deposition chamber 130, the chamber cover 200 and the deposition chamber 130 are sealed by a sealing ring, so as to improve the sealing effect, in the process, the welding corrugated pipe 240 abuts against the chamber cover 200, and the chamber cover 200 overcomes the elastic force of the third elastic member 260 to press the fourth flange 242 downward, so that the welding corrugated pipe 240 deforms, and the sealing effect is ensured. In the process that the chamber cover 200 opens the deposition chamber 130, the chamber cover 200 rotates reversely relative to the deposition chamber 130, the chamber cover 200 does not apply pressure to the fourth flange 242, and at this time, the third elastic member 260 rebounds and resets under the action of its own elastic force to drive the fourth flange 242 to reset upwards, so that the welding corrugated pipe 240 is restored.

Referring to fig. 1, 2 and 8 in combination, it is noted that a main heating wire 131 is disposed in the deposition chamber 130, and the main heating wire 131 is spirally disposed outside the first diffusion case 180 and the second diffusion case 190; an auxiliary heating wire 123 is arranged above the lifting plate 120, and the auxiliary heating wire 123 is wound. The main heating wire 131 and the auxiliary heating wire 123 act together to synchronously heat the first sealed cavity 181 and the second sealed cavity 191, which is convenient for realizing the atomic layer deposition process.

Specifically, in the using process of the ald apparatus 100, a robot is first used to place one wafer 300 on the first sample stage 140 and another wafer 300 on the second sample stage 150; then, the driving member 110 is used to drive the lifting plate 120 to lift, so that the first sample stage 140 abuts against the first diffusion shell 180 to form a first sealed cavity 181, and the second sample stage 150 abuts against the second diffusion shell 190 to form a second sealed cavity 191; then, the main heating wire 131 and the auxiliary heating wire 123 are turned on to simultaneously heat the two wafers 300 to a preset temperature; and finally, starting the first plasma generator 211 and the second plasma generator 221 to ionize the process gas into plasma gas and simultaneously realize atomic layer deposition on the two wafers 300, so that the deposition efficiency is high.

In the atomic layer deposition apparatus 100 provided in the embodiment of the present invention, the driving member 110 is connected to the lifting plate 120, the first sample stage 140 is connected to the lifting plate 120 through the first elastic member 160, the second sample stage 150 is connected to the lifting plate 120 through the second elastic member 170, the first diffusion shell 180 and the second diffusion shell 190 are both fixedly installed in the deposition chamber 130, the driving member 110 can continue to drive the lifting plate 120 to be lifted after the first sample stage 140 and the first diffusion shell 180 abut against each other until the second sample stage 150 and the second diffusion shell 190 abut against each other, so that the first diffusion shell 180 and the first sample stage 140 jointly enclose the first sealed cavity 181, and the second diffusion shell 190 and the second sample stage 150 jointly enclose the second sealed cavity 191, and the first elastic member 160 is configured to be compressed and deformed during the driving member 110 continues to drive the lifting plate 120 to be lifted. Compared with the prior art, the atomic layer deposition equipment 100 provided by the invention adopts the first sample stage 140 connected with the lifting plate 120 through the first elastic member 160 and the second sample stage 150 connected with the lifting plate 120 through the second elastic member 170, so that the deposition and coating of two wafers 300 can be realized simultaneously, the deposition efficiency is high, the sealing performance is high, the deposition effect is good, and the maintenance is convenient.

The present invention has been described in terms of the preferred embodiment, and it is not intended to be limited to the embodiment. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An atomic layer deposition apparatus, comprising a driving member (110), a lifting plate (120), a deposition chamber (130), a first sample stage (140), a second sample stage (150), a first elastic member (160), a second elastic member (170), a first diffusion shell (180) and a second diffusion shell (190), wherein the driving member (110) is connected to the lifting plate (120), the first sample stage (140) is connected to the lifting plate (120) through the first elastic member (160), the second sample stage (150) is connected to the lifting plate (120) through the second elastic member (170), the first diffusion shell (180) and the second diffusion shell (190) are both fixedly installed in the deposition chamber (130), the driving member (110) can continue to drive the lifting plate (120) to rise after the first sample stage (140) abuts against the first diffusion shell (180), until the second sample stage (150) abuts against the second diffusion shell (190), so that the first diffusion shell (180) and the first sample stage (140) jointly enclose a first sealed cavity (181), and the second diffusion shell (190) and the second sample stage (150) jointly enclose a second sealed cavity (191), wherein the first elastic member (160) is used for generating compression deformation in the process that the driving member (110) continues to drive the lifting plate (120) to lift;

the first sample platform (140) is provided with a supporting column (141), the lifting plate (120) is provided with a limiting hole (121), the supporting column (141) can be slidably arranged in the limiting hole (121), the supporting column (141) is sleeved with a first elastic piece (160), and the first elastic piece (160) is abutted to the lifting plate (120).

2. The atomic layer deposition apparatus according to claim 1, wherein a protrusion (142) is disposed on a circumferential surface of the supporting column (141), and an end of the elastic member away from the lifting plate (120) abuts against the protrusion (142).

3. The atomic layer deposition apparatus according to claim 2, further comprising a fixing cylinder (230), wherein the fixing cylinder (230) is sleeved outside the supporting column (141) and connected to the lifting plate (120), a positioning groove (231) is formed at an end of the fixing cylinder (230) away from the lifting plate (120), the protrusion (142) is engaged with the positioning groove (231), the first elastic member (160) is disposed between the fixing cylinder (230) and the supporting column (141), and the fixing cylinder (230) is used for limiting the first elastic member (160).

4. The atomic layer deposition apparatus according to claim 3, wherein a through groove (232) is further formed in an end of the fixed cylinder (230) away from the lifting plate (120), and the through groove (232) is used for the bump (142) to pass through.

5. The atomic layer deposition apparatus according to claim 4, wherein the number of the protrusions (142), the positioning slots (231) and the through slots (232) is two, two of the protrusions (142) are oppositely disposed on two sides of the supporting column (141), two of the positioning slots (231) and two of the through slots (232) are disposed on the inner wall of the fixed cylinder (230) in an annular array, and a line connecting the two positioning slots (231) and a line connecting the two through slots (232) are perpendicular to each other.

6. The atomic layer deposition apparatus according to claim 3, wherein the fixed cylinder (230) is provided with a first flange plate (233), the first flange plate (233) is provided with a through hole (234), the lifting plate (120) is provided with a threaded hole (122), and the threaded hole (122) is used for being matched with a screw passing through the through hole (234) to fix the relative position of the first flange plate (233) and the lifting plate (120).

7. The atomic layer deposition apparatus according to claim 1, further comprising a cover (200), a first ionization cylinder (210) and a second ionization cylinder (220), wherein the first ionization cylinder (210) and the second ionization cylinder (220) are both fixedly mounted in the cover (200), the cover (200) is hinged to the deposition chamber (130), and the cover (200) can be placed on the deposition chamber (130) to communicate the first ionization cylinder (210) with the first diffusion housing (180) and to communicate the second ionization cylinder (220) with the second diffusion housing (190).

8. The atomic layer deposition apparatus according to claim 7, further comprising a welded bellows (240), wherein one end of the welded bellows (240) is connected to the first diffusion shell (180) and the other end abuts against the first ionization cylinder (210).

9. The atomic layer deposition apparatus according to claim 8, further comprising a screw (250) and a third elastic member (260), wherein the first diffusion shell (180) is provided with a second flange (182), two ends of the welding bellows (240) are provided with a third flange (241) and a fourth flange (242) opposite to each other, the screw (250) sequentially penetrates through the second flange (182) and the third flange (241) and is in threaded connection with the fourth flange (242), the third elastic member (260) is sleeved outside the screw (250), one end of the third elastic member (260) abuts against the third flange (241), and the other end abuts against the fourth flange (242).