WO2015142131A1

WO2015142131A1 - Multi-type deposition apparatus and thin-film forming method using same

Info

Publication number: WO2015142131A1
Application number: PCT/KR2015/002783
Authority: WO
Inventors: 김운태
Original assignee: 김운태
Priority date: 2014-03-21
Filing date: 2015-03-21
Publication date: 2015-09-24
Also published as: KR20150109778A; KR101634694B1

Abstract

In the present invention, a plurality of process modules, each having a process chamber and a vacuum chamber as a basic unit, are disposed in a stacked form, wherein the process chamber has upper and lower process chambers that can be separated from and coupled to each other, and the vacuum chamber is separately disposed outside the process chamber to form a vacuum and adjust pressure. Further, the process chamber and the vacuum chamber of each unit process module are implemented to have a minimum space in which an optimal process can be performed, and atomic layer deposition processes can be simultaneously performed in the process chambers of the plurality of process modules. Therefore, the amount of used source and reactant precursors can be reduced, and a process time can be minimized, thereby achieving cost reduction and productivity enhancement, and a process or maintenance can be independently performed for each process module, thereby easily increasing extensibility in the operation of the apparatus. In addition, a substrate or a mask subjected to atomic layer deposition is brought close to the upper or lower process chamber within the optimized process chamber, thereby preventing a film from being formed on the backside of the substrate, and simultaneously forming films on two substrates.

Description

[Calibration by Rule 26.05.2015] 26Multi-type deposition apparatus and thin film formation method using the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-type deposition apparatus and a method for forming a thin film using the same. In particular, in atomic layer deposition (ALD), a process chamber and a process chamber for an atomic layer deposition process capable of separating and combining upper and lower portions are possible. The present invention relates to a multi-type atomic layer deposition apparatus and method in which a plurality of process modules composed of vacuum chambers for maintaining a vacuum space in a stacked form are arranged in a stacked form.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like.

However, in recent years, as the design rule of a semiconductor device is drastically fined, a thin film of a fine pattern is required, and the step height of the region where the thin film is formed is also very large, so that a fine pattern of atomic layer thickness can be formed very uniformly. In addition, the use of atomic layer deposition (ALD) with excellent step coverage is increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it uses a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, an atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product is deposited by chemical reaction between the source materials at the substrate surface by chemisorbing to the substrate and then injecting a gas containing another source material into the process chamber.

On the other hand, the atomic layer deposition method described above is a thin film bag for replacing a conventional glass bag in an AMOLED display, a barrier film of a flexible substrate, a buffer layer for photovoltaics, and a ferroelectric for semiconductors (high). -k) can be used to form high dielectric materials for capacitors or aluminum (Al), copper (Cu) wiring diffusion barriers (TiN, TaN, etc.) and the like.

The atomic layer deposition method is a process in which the sheet-fed, batch and substrates used in plasma enhanced chemical vapor deposition (PECVD) are transported to the bottom of the small reactor, or the method is carried out by the scan reactor to transport the substrate. have.

First of all, the single sheet method is processed after the input of one substrate, and consists of a moving susceptor for input / export and heating of the substrate, a diffuser (mainstream of the showerhead type) and an exhaust part for process gas input and diffusion. have. However, in the single-leaf method, the chamber is very thick to prevent deformation of the process chamber and the periphery according to the external atmospheric pressure during vacuum formation, and the internal volume is required when constructing the equipment for the large-area substrate due to the need for a gate valve for loading / exporting the substrate and distinguishing the process area. Since there is an enormous increase in productivity, there is a problem in that the productivity is significantly reduced due to the rapid increase in the consumption of the raw material precursor and the reaction precursor, the increase in the maintenance cost, and the increase in the process time due to the increase in the adsorption-purge-reaction-purge time.

Next, the batch type process which processes several substrates at the same time has a large volume of atomic layer deposition equipment, so that the raw material precursors and the reaction precursors require a lot of maintenance costs and low productivity. At the same time, the process is performed. Although this batch type is partially applied to the solar cell process, there is a problem that simultaneous film formation is performed not only on the front side of the substrate but also on the back side, the uniformity and reproducibility of the thin film on a plurality of substrates, and one process compartment according to the unclear classification of the process area. Even when contamination occurs, there is a problem in that the entire ultra large chamber needs to be cleaned.

Next, the scanning reactor method is a method in which a plurality of small reactors corresponding to the length of one side of the substrate in the vacuum chamber are disposed so that the substrate or the small reactor is reciprocated to form a film. Difficulties in controlling the gas flow of the reactor are known to have low productivity due to particle issues and long deposition times.

Therefore, in the present invention, a plurality of process modules, each of which has a separate vacuum forming and pressure control vacuum chamber as a basic unit, are disposed in the form of a plurality of process chambers that can separate and combine the upper and lower parts, and each unit process. The process chamber and the vacuum chamber of the module are implemented to have only the minimum space for the optimal process, and the atomic layer deposition process can be performed simultaneously in the process chambers in the multiple process modules, thereby reducing the amount of raw material precursors and reaction precursors. By minimizing the process time, it is possible to improve productivity while reducing costs, and it is easy to determine the device operation by enabling individual process progress or individual maintenance for each process module. In addition, a multi-atomic layer deposition apparatus and method in which an atomic layer deposition target substrate or mask is in close contact with an upper process chamber or a lower process chamber in an optimized process chamber can prevent film formation on the back side of a substrate and simultaneously form two substrates. To provide.

The present invention described above is a multi-type atomic layer deposition apparatus, wherein a process module having a process chamber and a vacuum chamber as a minimum unit has an upper process chamber and a lower process chamber, and is loaded or unloaded when a substrate to be subjected to an atomic layer deposition process is formed. The process chamber is separated from the upper process chamber and the lower process chamber, the process chamber for combining the upper process chamber and the lower process chamber to form a sealed reaction space during the deposition process on the substrate, at least one or more of the process At least two vacuum chambers which support the chambers in a vertically stacked form and maintain or vacuum the space of the process chamber are included.

In addition, the upper process chamber is fixed to the vacuum chamber, the lower process chamber is characterized in that it is coupled to or separated from the upper process chamber by moving up and down in the vacuum chamber.

The upper process chamber may include a gas supply unit that supplies a process gas or purge gas to the sealed reaction space on one side of the upper process chamber, and exhausts the gas supplied to the sealed reaction space. A part is provided on the other side of the upper process chamber.

In addition, the gas supply unit, characterized in that formed in the outer or central portion on the side or the upper surface of the upper process chamber.

In addition, an electrode for plasma generation is formed on the lower surface of the upper process chamber.

In addition, the electrode is characterized in that the coupling and detachment with the insulator and the power inlet contact portion of the upper process chamber by the detachable device of the upper process chamber.

In addition, an electrode for generating plasma may be formed at an introduction portion of the gas supply unit through which the process gas or the purge gas is introduced into the closed reaction space.

The electrode may be surrounded by an insulator so as to be insulated from the upper process chamber.

The gas supply unit may be formed as a diffusion space or a showerhead diffuser for uniform gas flow in the side or central portion of the upper process chamber, so that the process gas may be perpendicular or horizontal to the substrate in the sealed reaction space. It characterized in that the injection of the purge gas.

In addition, the vacuum chamber is characterized in that it comprises a guide unit for supporting or carrying in / carrying out by stacking the process chamber in the inner space of the vacuum chamber.

The vacuum chamber may include fixing means for fixing the upper process chamber and transfer means for moving the lower process chamber up and down.

In addition, the present invention is a stacked atomic layer deposition method, the step of loading a substrate and a mask in the process chamber, and when the substrate and mask is loaded, the upper process chamber and the lower process chamber of the process chamber is combined and sealed reaction Forming a space, and performing an atomic layer deposition process on the substrate in a closed reaction space.

In addition, the stacked atomic layer deposition method is characterized in that when the atomic layer deposition process is completed, the upper process chamber and the lower process chamber is separated, the substrate is unloaded.

In addition, the atomic layer deposition process is characterized in that carried out simultaneously in the process chamber in the two or more process modules.

In addition, the atomic layer deposition process is characterized in that performed separately in the process chamber for each vacuum chamber unit in the two or more process modules.

In addition, the upper process chamber is fixed to the vacuum chamber, the lower process chamber is characterized in that it is coupled to or separated from the upper process chamber by moving up and down by a transfer means provided in the vacuum chamber.

The performing of the atomic layer deposition process may include supplying a raw material precursor to the substrate in the reaction space through a gas supply part formed at one upper surface of the process chamber, and adsorbing the raw material precursor onto the substrate. And exhausting the raw material precursor that has not been adsorbed onto the substrate by supplying purge gas to the substrate through the gas supply unit, and supplying the reaction precursor to the substrate through the gas supply unit after exhausting the raw material precursor. Forming an atomic layer thin film through a chemical reaction with a precursor, and exhausting a reaction precursor that is not bonded to the raw material precursor by supplying a purge gas to the substrate through the gas supply unit after the atomic layer thin film is formed. It is characterized by including.

In addition, at least one of the raw material precursor, the reaction precursor, the purge gas is characterized in that the supply or exhaust through the shared gas pipe.

In addition, at least one of the raw material precursor, the reaction precursor, and the purge gas may be supplied through a gas supply part formed as a diffusion space or a shower head diffuser for uniform gas flow in the side or the center of the upper process chamber, It is characterized in that the injection in the vertical or horizontal direction to the substrate.

In addition, when the reaction precursor is supplied to the substrate, generating a plasma in the lower surface of the upper process chamber corresponding to the substrate or the inlet connected to the reaction space, and chemical reaction of the reaction precursor and the raw material precursor using the plasma Forming an atomic layer thin film through the reaction is characterized in that it further comprises.

According to the present invention, in atomic layer deposition, a process module having one or more process chambers housed inside at least two or more stacked vacuum chambers is independently an atomic layer in the process chambers housed in each vacuum chamber. By allowing the deposition process to be performed, it is possible to combine various processes per unit process module to improve equipment efficiency and individual maintenance according to process optimization, greatly reducing cost and productivity by minimizing manpower and time for maintenance. Can improve.

In addition, the combination of the optimized process module can be performed simultaneously in each process chamber has the advantage that can significantly improve the productivity.

In addition, by minimizing the space for the process in each process chamber, the volume optimization in the process chamber reduces the adsorption time of the precursor, the reaction time of the precursor and the purge time, thereby improving productivity, and increasing the precursor, reaction precursor, and purge. By reducing the consumption of gas has the advantage of reducing the cost of the atomic layer deposition process.

In addition, the separate external vacuum chamber configuration can simplify the process chamber and reduce the weight, thereby reducing the maintenance cost of the atomic layer deposition equipment and increasing the convenience of maintenance.

In addition, the atomic layer deposition target substrate in the optimized process chamber is in close contact with the upper process chamber or the lower process chamber has the advantage of preventing the film deposition on the back of the substrate.

In addition, by implementing a fixed type in which a plurality of vacuum chamber process chambers are fixed, it is possible to solve the particle problem caused by the difficulty of gas control due to the relative movement of the substrate and the process chamber, and the raw material precursor, reaction precursor, purge gas Various configurations of the / exit is easy, there is an advantage that it is easy to apply the change of configuration to suit a variety of process characteristics and substrate in the future.

1 is a block diagram of an atomic layer deposition apparatus according to an embodiment of the present invention,

2 is a three-dimensional perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention,

3 is a cross-sectional structure of an atomic layer deposition equipment according to an embodiment of the present invention, individual transfer and alignment device or simultaneous transfer and alignment device configuration diagram

4 is a three-dimensional perspective view of a process chamber according to an embodiment of the present invention;

5 is a detailed cross-sectional structural view of a process chamber according to an embodiment of the present invention;

6 is a schematic configuration diagram of a cross-sectional structure of a process chamber according to an embodiment of the present invention in which a process gas crosses or moves on a substrate, and a plasma process is possible;

FIG. 7 is a schematic configuration diagram of a process chamber and purge gas and an exhaust part as a cross-sectional structure of a process chamber according to an exemplary embodiment of the present invention, and a multi-part deposition process using plasma; FIG.

8 is a cross-sectional configuration diagram of a process chamber according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail the operating principle of the present invention. In the following description of the present invention, when it is determined that a detailed description of a known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. Terms to be described later are terms defined in consideration of functions in the present invention, and may be changed according to intentions or customs of users or operators. Therefore, the definition should be made based on the contents throughout the specification.

1 illustrates various arrangements of the structure of an atomic layer deposition apparatus according to an embodiment of the present invention. The process module 1300 of the atomic layer deposition apparatus 1000 includes a plurality of vacuum chambers 1100 and the vacuum chamber ( At least one process chamber 1200 in 1100 may be included.

The process module 1300 is a heterogeneous thin film deposition, such as A or B, or each of the unit process modules 1300, each of which can be individually configured to control pressure and atmosphere, or have different processes such as ALD and CVD having different deposition pressures and deposition rates. Applicability is also easy to optimize the process of various combinations, and it is possible to maximize the use efficiency of the device is possible by the maintenance per unit process module (1300).

Hereinafter, the structure of the atomic layer deposition apparatus 1000 of the present invention will be described in detail with reference to FIGS. 1 and 2.

First, the process chamber 1200 is implemented as a chamber capable of performing an atomic layer deposition process on a substrate, each having an independent space, and at least one or more stacked in a vertical direction to form an external vacuum chamber 1100. Is accommodated in. The process chamber 1200 is moved up and down by the upper process chamber 1210 and the transfer unit provided in the vacuum chamber 1100 when the position is fixed in the vacuum chamber 1100 is coupled to the upper process chamber 1210 or It may be composed of a separate lower process chamber 1220.

The process chamber 1200 is configured to be separated or combined into the upper process chamber 1210 and the lower process chamber 1220 as described above to ensure only the space for the optimal atomic layer deposition process to ensure the volume of the atomic layer deposition apparatus It can be designed to minimize the.

In addition, the process chamber 1200 may enter and exit the vacuum chamber 1100 in conjunction with the guide portion 1204 installed on the upper or side surfaces of the vacuum chamber 1100, and may be introduced into a reference position in the vacuum chamber 1100. It is possible to fix by adjusting the guide portion 1204 in the state.

Next, the vacuum chamber 1100 has a multi-stage support portion 1202, a guide portion 1204, and the like, in which at least one or more process chambers can be loaded in a vertical direction, and maintains a vacuum state to process chamber 1200. Allow atomic layer deposition process to take place.

That is, the vacuum chamber 1100 supports a plurality of inner process chambers 1200 in which process chambers 1200 configured to be separated and coupled for an atomic layer deposition process are stacked, and a substrate is loaded / loaded in each process chamber. It is possible to carry out, and it is possible to minimize the influence of the external force applied to the inner process chamber 1200 from the environment where the external atmosphere and pressure difference exists.

Therefore, as shown in FIG. 1, a structure in which a plurality of process chambers 1200 in which independent atomic layer deposition processes are performed is vertically stacked on one vacuum chamber 1100 or a process chamber in each vacuum chamber 1100 ( In the case of using 1200 at the same time, since a plurality of substrates are simultaneously formed in a plurality of process chambers 1200, the productivity can be improved several times compared to a conventional single substrate evaporator.

2 is a three-dimensional perspective view showing the configuration of the atomic layer deposition apparatus 1000 and the process module 1300 according to the embodiment of the present invention described above.

A unit process module 1300 comprising a process chamber 1200 including an upper process chamber 1210 and a lower process chamber 1220 and at least two vacuum chambers 1100 including at least one process chamber. It is composed of a plurality of process modules 1300 are stacked.

3 is a cross-sectional structure of the atomic layer deposition apparatus 1000 according to the embodiment of the present invention described above, the transfer unit 1110 and the pressure for each vacuum chamber 1100 for individual transfer or simultaneous transfer of the lower process chamber 1220. A buffer space 1101 is configured to minimize deformation due to the difference.

4 shows a detailed cross-sectional structure of a process chamber according to an embodiment of the present invention.

The lower process chamber 1220 is moved downward to load the substrate 1010 and the mask 1020 into the process chamber 1200, and the process chamber is opened.

Referring to FIG. 4, the substrate 1010 and the mask 1020 are moved to a process chamber in a state in which the lower process chamber 1220 is moved from the upper process chamber 1210 to the lower portion in the vertical direction by the transfer unit 1110. The substrate support 1015 and the mask support 1017 inside the 1200 are sequentially loaded. In this case, the upper process chamber 1210 of the process chamber 1200 is fixed to and supported by the vacuum chamber 1100, and the lower process chamber 1220 is supported by the conveying unit 1110 provided in the vacuum chamber 1100. It can be moved up and down in the vertical direction with respect to 1100.

As described above, when the substrate 1010 and the mask 1020 are loaded on the substrate support 1015 and the mask support 1017, the lower process chamber 1220 is raised by the transfer unit 1110, and the substrate 1010 and As the mask 1020 is sequentially seated in the lower process chamber 1220, the lower process chamber 1220 is finally coupled to the upper process chamber 1210.

Meanwhile, at this time, the loading of the substrate 1010 and the mask 1020 may be performed separately for each process chamber 1200, or may be simultaneously performed in a state in which a plurality of process chambers 1200 in the vacuum chamber 1100 are opened. have.

After the substrate 1010 and the mask 1020 are loaded in the state in which the process chamber 1200 is opened, the lower process chamber 1220 is raised by the transfer unit 1110 so that the lower process chamber 1220 becomes the upper process chamber ( By coupling to the 1210, an independent space of the process chamber 1200 may be formed.

As such, when the upper process chamber 1210 and the lower process chamber 1220 are combined to form an independent space for process progress, the required gas is introduced into the process gas supply unit 1212 as the process proceeds, thereby providing a substrate 1010. An atomic layer deposition process may be performed.

Meanwhile, when the atomic layer deposition process for the substrate 1010 is completed while the upper process chamber 1210 and the lower process chamber 1220 are coupled as described above, the lower process chamber 1220 is moved by the transfer unit 1110. An unloading operation is performed in which the upper process chamber 1210 and the lower process chamber 1220 are separated by being lowered and carried out to the outside of the process chamber 1200 with respect to the substrate 1010 on which the process is completed in such an unloading state. You lose.

Referring to FIG. 4, a gas supply part 1212 and an exhaust part 1211 may be formed on an upper surface of the upper process chamber 1210. In this case, the gas supply part 1212 may be formed in a round tube shape at the center of both sides of the upper process chamber 1210. In addition, the gas supplied from the gas supply unit 1212 is formed on the lower surface of the upper process chamber 1210 including an internal diffusion region to ensure a uniform flow of process gas on the entire surface on the substrate.

A mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on an upper surface of the lower process chamber 1220. In this case, the mask 1020 and the substrate 1010 are loaded to be seated on the mask support 1017 and the substrate support 1015, respectively, and then in an independent space in the process chamber generated when the lower process chamber and the upper process chamber are combined. Will be located. In addition, the lower surface of the lower process chamber, the height limit of the mask support 1017 and the substrate support 1015, the connection portion 1018 for stable support is formed, and the support hole of the lower process chamber and the Separate sealing parts such as O-rings and bellows can be added between the supports.

In addition, before the upper process chamber 1210 and the lower process chamber 1220 are combined, a mask using an image information processing (vision) apparatus for accurately securing and mounting the substrate 1020 and the mask 1020. It can be configured to enable accurate alignment by configuring the control unit portion that can control the left and right, front and rear, rotation of the unit or the substrate unit.

In addition, a lower surface of the upper process chamber 1210 constitutes a mask support portion 1017 for seating the mask 1020 and a substrate support portion 1015 for seating the substrate 1010 to form the upper process chamber 1210. Can be formed on the substrate and the substrate of the lower process chamber 1220 at the same time.

5 is an exploded three-dimensional perspective view of the process chamber according to another embodiment of the present invention, a gas supply unit shows a three-dimensional perspective view of the process chamber formed by the showerhead method.

Referring to FIG. 5, a gas supply part 1212 and an exhaust part 1211 may be formed on an upper surface of the upper process chamber 1210. In this case, the gas supply part 1212 may be formed on the upper side or the side of the upper process chamber 1210. In addition, a showerhead type diffuser 1312 is formed on a lower surface of the upper process chamber 1210 for spraying a process gas for spraying the gas supplied from the gas supply unit 1212 onto the entire surface of the substrate.

A mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on an upper surface of the lower process chamber 1220. In this case, the mask 1020 and the substrate 1010 are loaded to be seated on the mask support 1017 and the substrate support 1015, and then a process generated when the lower process chamber 1220 and the upper process chamber 1210 are combined. It is located in an independent space in the chamber 1200. In addition, a connection portion 1018 is formed on the lower surface of the lower process chamber 1220 to fix the mask support 1017 and the substrate support 1015 to the process chamber 1200.

FIG. 6 is a cross-sectional structure of a process chamber according to an exemplary embodiment of the present invention and illustrates a schematic configuration in which process gas is injected in a cross flow or moving wave manner on a substrate.

Referring to FIG. 6, an atomic layer includes a raw material precursor, a reaction precursor, and a purge gas from a side surface of the upper process chamber 1210 to the substrate 1010 located inside the process chamber 1200 through the gas supply unit 1212. It supplies sequentially according to the order of the deposition process, and shows a structure to exhaust the process gas or purge gas used in each process through the gas exhaust unit 1211 formed on the other side of the upper process chamber 1210 have.

Hereinafter, referring to the operation, the raw material precursor (TMA, etc.) supplied to the gas supply unit 1212 passes through a solid or wavy region in which one side of the upper process chamber 1210 is easily diffused, and then the one of the substrate 1010. It is uniformly supplied to the side surface, and thus, an adsorption reaction occurs on the upper surface of the substrate 1010 seated in the lower process chamber 1220.

When the adsorption is completed, the purge gas (Ar, O ₂ , N ₂ , N ₂ O, etc.) is supplied to the gas supply part 1212 to discharge the raw material precursor remaining on the substrate to the gas exhaust part 1211, and then the reaction precursor is discharged. By supplying to the gas supply unit 1212 and spraying the substrate 1010, a desired atomic layer thin film is formed by chemical reaction between the raw material precursor and the reaction precursor.

After the thin film is formed on the substrate 1010, the purge gas is supplied to the gas supply unit 1212 again to remove all remaining reactive precursors that do not bond with the raw material precursors on the substrate 1010. In this case, the atomic layer thin film on the substrate 1010 is formed to have a desired thickness through a repeating process using the above-described four-step process as one cycle.

In this case, in order to smoothly react the reaction precursor and improve the thin film characteristics, a susceptor function may be performed by providing a heater function to the lower process chamber 1220 to enable temperature control of the substrate 1010. In addition, after the upper process chamber 1210 and the lower process chamber 1220 are combined, the lower part may be prevented from generating particles due to gas leakage to the outside of the process chamber 1200 due to incomplete coupling of the process chamber 1200. A basic sealing part 1221 and an additional sealing part 1222 may be configured on the outer side of the process chamber 1220, and a surface contact forming part for perfect surface contact between the upper process chamber 1210 and the lower process chamber 1220. It can also be configured additionally.

Hereinafter, the atomic layer deposition process in the process chamber 1200 will be described in more detail.

First, when the upper process chamber 1210 and the lower process chamber 1220 of the process chamber 1200 are coupled to a situation in which the process of the atomic layer deposition process is possible, the first step of the atomic layer deposition process, the gas supply unit ( The raw material precursor is supplied through 1212, and the raw material precursor supplied through the gas supply unit 1212 is sprayed onto the substrate 1010 to be subjected to the atomic layer deposition process so that a single molecular layer of the raw material precursor is provided on the substrate 1010. To form. Next, when the raw material precursor is sufficiently injected onto the substrate 1010, physical adsorption that is physically coupled onto the substrate 1010 by supplying a purge gas to the gas supply unit 1212 in the second step of the atomic layer deposition process. For the precursor layer of the layer, the bond with the substrate 1010 is separated by the purge gas to be exhausted through the gas exhaust unit 1211 to obtain a single molecular layer of the precursor precursor.

In this case, when the raw material precursor is injected onto the substrate 1010, the raw material precursor is chemically or physically adsorbed onto the surface of the substrate 1010 to form a thin film. In this state, the inert purge gas is transferred to the substrate 1010. When sprayed, the precursor precursor of the physical adsorption layer, which has a relatively weak bonding force, is separated from the substrate 1010 and exhausted, but is chemically bonded to the substrate 1010 through covalent bonding to provide a relatively strong bonding force compared to the physical adsorption layer. The raw material precursor of the chemisorption layer is not separated.

Next, in the three steps of the atomic layer deposition process, the reaction precursor is supplied through the gas supply unit 1212 to inject the reaction precursor onto the substrate 1010. As a result, the reaction precursor sprayed on the substrate 1010 reacts with the raw material precursor adsorbed on the substrate 1010 to form an atomic layer thin film. Finally, when atomic layer deposition is performed by the gas phase reaction between the raw material precursor and the reaction precursor as described above, in the fourth step of the atomic layer deposition process, the purge gas is supplied through the gas supply unit 1212 to supply excess gas on the substrate 1010. Remove precursor or physisorption molecules.

The atomic layer thin film is formed on the substrate 1010 by a desired thickness through an iterative process using the above four-step atomic layer deposition process as one cycle.

In this case, in the above-described atomic layer deposition process, the gas supply unit 1212 is formed on one side of the process chamber 1200, and the process gas is described by way of example, which is injected by the cross flow or moving wave method on the substrate. The gas supply unit 1212 may be formed in a shower head type on the upper process chamber 1210 so that the precursor is sprayed perpendicularly to the surface of the substrate 1010.

In addition, an electrode 1313 for forming plasma is disposed in the center of the upper process chamber 1210, and an insulator 1314 is formed between the electrode 1313 and the upper process chamber 1210 to form the upper process chamber 1210. The structure which prevents a short between the electrodes 1313 is shown.

Hereinafter, referring to the operation, first, the raw material precursor is supplied to the gas supply unit 1212 and uniformly supplied to one side of the substrate 1010, and thus the upper layer of the substrate 1010 seated in the lower process chamber 1220. At this point, adsorption reaction occurs.

Subsequently, when the adsorption of the raw material precursor is completed, the purge gas is supplied to the gas supply part 1212 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust part 1211.

Subsequently, the reaction precursor is supplied to the gas supply unit 1212 and sprayed onto the substrate, and then, power is supplied to the electrode 1313 to generate a plasma 1030 directly onto the substrate 1010 to generate a plasma 1030. The atomic layer thin film is formed through the chemical reaction between the raw material precursor and the reaction precursor by. In this case, in the formation of the atomic layer thin film on the substrate 1010 using the plasma 1030, the plasma 1030 is supplied when the raw material precursor on the substrate 1010 is completely removed by supplying a purge gas including the reaction precursor. May be formed to form a film.

In addition, in order to minimize the effect on the thin film of the substrate 1010 directly by the plasma 1030, a structure in which the gas supply unit 1212 has a separate electrode 1313 and the insulator 1314 may be configured. .

In addition, a raw material precursor, a reaction precursor, and a purge gas are sequentially disposed in an order of the atomic layer deposition process through the gas supply unit 1212 to the substrate 1010 located inside the process chamber 1200 outside the upper process chamber 1210. The gas supply unit 1211 may be configured to supply a process gas or purge gas used in each process through the gas exhaust unit 1211 formed at the center of the upper process chamber 1210.

In addition, the process proceeds while the gas supply unit 1212 and the gas exhaust unit 1211 are shared with the substrate or the blank mask 1050 which can be periodically replaced by the robot while minimizing contamination of the upper process chamber 1210. It is possible.

In addition, the raw material precursor, the reaction precursor, and the purge gas are transferred to the substrate 1010 located in the process chamber 1200 through the shower head diffuser 1312 formed at the center of the upper process chamber 1210. In order to supply sequentially, through the gas exhaust unit 1211 formed on both sides of the upper process chamber 1210 may be configured to exhaust the process gas or purge gas used in each process. .

In addition, the exhaust region adjacent to the substrate 1010 may be composed of both ends or the entire four sides of the substrate 1010, and improves the uniformity of flow such as a corrugated shape, a wavy shape, a hole diffuser, and a slit diffuser in a predetermined region of the exhaust path. The exhaust entry portion may be disposed as close as possible to the substrate 1010 to minimize contamination of unnecessary areas other than the substrate 1010 requiring film formation.

In addition, when there is a concern that the lower layer may be damaged by ions and electrons or materials that are difficult to apply the plasma directly, a gap insulator between the electrode 1413 and the showerhead diffuser 1312 in addition to the insulator 1314 may be used to prevent the risk of damage to the lower layer. 1414 may be further configured to generate a plasma 1030 only between the electrode 1413 and the diffuser 1312 to supply radicals through dissociation of the reaction precursor, thereby not damaging the substrate 1010. It can be configured to be formed.

7 is a cross-sectional structure of a process chamber 1200 according to another embodiment of the present invention.

It shows a schematic configuration for performing multi-division region deposition on a large area substrate without applying a screed.

Referring to FIG. 7 above, the upper process chamber 1210 is applied to the large area substrate 1010.

At least two regions may be divided to perform an atomic layer deposition process for each region, and the raw material precursor, the reaction precursor, and the purge gas may be sequentially disposed on the substrate 1010 for each region in the order of the atomic layer deposition process. The structure to supply is shown.

At this time, each atomic layer deposition process unit 1340 has a gas supply unit 1312 for supplying a process gas to the substrate 1010 in each region, the process gas or purge gas used in each process on the outer periphery The structure which has the gas exhaust part 1311 for exhausting the gas is shown.

In addition, the shower head-type diffuser, the central hole diffuser, the slit-type diffuser, etc. to form a uniform gas flow as possible, and the process proceeds using a direct plasma or an indirect plasma generated by supplying power to each diffuser.

In addition, in FIG. 7, each of the divided regions in the configuration for basic multi-layer deposition is shown.

A purge gas supply unit 1412 for additionally supplying purge gas to the boundary position may be provided to form a closed loop in connection with the gas exhaust unit 1311, so that the boundary between each divided region may be more clearly realized.

In addition, in FIG. 7, for example, the shower head type diffuser and the center hole diffuser may be configured.

Accordingly, in addition to the deposition region when supplying the raw material precursor, the reaction precursor, and the purge gas, gas exposure, diffusion, and residual can be prevented. Thus, even if a mask for separating the deposition region of a large-area substrate is not used, a multi-division region Deposition can be performed.

8 is a detailed cross-sectional structure of a process chamber 1200 according to an exemplary embodiment of the present invention, and a schematic configuration for controlling a deposition region of a substrate 1010 and a driving gas 1415 is used without applying a mask 1020. The schematic configuration for adjusting the height of the gap between the upper process chamber 1200 and the lower process chamber 1220, and the schematic configuration for implementing the removable electrode (1313) is shown.

Referring to FIG. 8, a gas supply unit 1312 for supplying a process gas onto the substrate 1010 and a purge gas supply unit 1412 on the other side thereof, and a gas exhaust unit 1311 for exhausting the process gas and the purge gas in the center thereof. ).

In order to sequentially increase or decrease the deposition area by forming an apparatus portion 1416 capable of adjusting displacement according to a pressure having a membrane-like function at the inlet of the gas exhaust unit 1311, and controlling the existing area of the process gas. It becomes possible.

At this time, when the displacement adjusting unit 1416 of the gas exhaust unit 1311 is reduced from the inside to the outside, the deposition material 1 is deposited, and the deposition material 2 is deposited in another process module or another process device and then reloaded. Expandable deposition is possible to completely cover the outer side of the film forming portion, thereby completely sealing each layer of the deposition material.

In addition, in FIG. 8, the basic sealing part 1221 is configured with a device part 1416 capable of adjusting the displacement according to the pressure having a membrane-like function, thereby easily increasing the height of the gap between the upper process chamber 1210 and the lower process chamber 1220. It can be adjusted to enable various process applications.

Also, in FIG. 8, the detachable device part 1315 of the electrode 1313 formed in the upper process chamber 1210 is configured to easily carry the electrode 1313 into the substrate using a vertical transfer robot or a lower process chamber 1220. And since it is possible to carry out, a separate maintenance time for cleaning after a long process can be omitted, thereby increasing productivity.

At this time. The detachable device portion 1315 of the electrode is in close contact with the insulator 1314 for the electrode 1313 using a partial tapered rotation.

As described above, in the present invention, in the atomic layer deposition, a plurality of unit process chambers for the atomic layer deposition process capable of separating and combining the upper and lower portions are arranged in a stacked form, and the plurality of process chambers arranged in the stacked form. By implementing a separate vacuum-forming and pressure-controlled vacuum chamber on the outside of the raw material precursor and the reaction precursor by simultaneously performing the atomic layer deposition process in a plurality of process chambers implemented to have a minimum space for the optimal process Reduced usage and minimizing process time can improve productivity while reducing costs. In addition, according to the present invention, the atomic layer deposition target substrate is perfectly in close contact with the upper process chamber or the lower process chamber in the optimized process chamber, thereby preventing the film formation on the back side of the substrate.

Meanwhile, in the above description of the present invention, specific embodiments have been described, but various modifications may be made without departing from the scope of the present invention. For example, in the embodiment of the present invention, the operation in the atomic layer deposition apparatus is described by way of example, but the present invention is equally applicable to PECVD.

Therefore, the scope of the invention should be determined by the claims rather than by the described embodiments.

Claims

An upper process chamber and a lower process chamber, wherein the upper process chamber and the lower process chamber are separated when loading or unloading a substrate to be subjected to an atomic layer deposition process, and the upper process chamber when the deposition process is performed on the substrate. And a process chamber which combines with the lower process chamber to form a closed reaction space,

An atomic layer deposition apparatus having a process module including a vacuum chamber for maintaining a space of the process chamber in a vacuum state stacked in a vertical direction.
An upper process chamber and a lower process chamber, wherein the upper process chamber and the lower process chamber are separated when loading or unloading a substrate to be subjected to an atomic layer deposition process, and the upper process chamber when the deposition process is performed on the substrate. And one or more process chambers combined with the lower process chambers to form a closed reaction space.

At least two process modules including a vacuum chamber for maintaining the space of the process chamber in a vacuum state stacked type in the vertical direction.
The method of claim 2,

Atomic layer deposition apparatus further comprises an alignment device for securing and positioning the substrate and the mask correctly before the upper process chamber and the lower process chamber is coupled
The method of claim 3, wherein

The alignment device,

Atomic layer deposition apparatus comprising a control unit that can control the left, right, front, and rear of the mask unit or the substrate unit by using an image information processing (vision) apparatus
The method of claim 2,

And an electrode for plasma generation, which is coupled or separated by an insulator and a contact type power supply and a detachable device, is formed on a lower surface of the upper process chamber.
The method of claim 2,

Atomic layer characterized in that the gas exhaust portion of the upper process chamber is configured to adjust the displacement according to the pressure to control the phase area of the process gas to sequentially increase the deposition area to completely seal the interlayer of the deposition material Deposition equipment
The method of claim 2,

The vacuum chamber,

Stacked atomic layer deposition apparatus is configured to enable the vacuum forming of the process chamber outer space or conversion to the atmosphere, the maintenance switch for each process module is configured.
The method of claim 2,

The vacuum chamber,

And a guide part for supporting, carrying in, taking out, or transferring the process chamber to the inner space of the vacuum chamber.
The method of claim 2,

The vacuum chamber,

And fixing means for fixing the upper process chamber and transfer means for moving the lower process chamber up and down.
The method of claim 2,

And the upper process chamber is fixed to the vacuum chamber, and the lower process chamber is moved up and down in the vacuum chamber to be coupled to or separated from the upper process chamber.
The method of claim 2,

The apparatus further comprises a device having a tension control function that can maintain the even bonding force of the entire area and buffer the excessive bonding force of a specific area when the upper process chamber and the lower process chamber is moved up and down to combine Layer deposition apparatus.
The method of claim 11,

Tension control device is made of a combination of components that can be changed to a range of external forces, such as O-rings, springs, c-shaped blocks having their own elastic force or membranes, tubes having expansion and contraction functions by external pressure An atomic layer deposition apparatus.
The method of claim 11,

Including the measuring device, such as a load cell or pressure gauge to maintain the even bonding force of the entire area and to measure the excessive bonding force of the specific area when the upper process chamber and the lower process chamber is moved up and down to combine Atomic layer deposition apparatus further comprises a function to adjust the tension.
The method of claim 2,

Membrane having a gap block replacement device having a predetermined thickness for adjusting the gap required when the process chamber and the lower process chamber are moved up and down, or a membrane that can be expanded and contracted by an external pressure difference between the gaps. Atomic layer deposition apparatus characterized in that the gap can be adjusted according to the pressure control applied to the membrane
The method of claim 2,

The process chamber,

A gas supply unit for supplying a process gas or purge gas to the closed reaction space is provided on one side of the process chamber,

And a gas exhaust portion for exhausting the gas supplied to the sealed reaction space on the other side of the process chamber.
The method of claim 15,

And an electrode for generating a plasma is formed at an introduction portion of the gas supply unit through which the process gas is introduced into the closed reaction space.
The method of claim 15,

The gas supply unit,

The process gas is formed in a diffusion space of a V, W, VVV, U shape or a showerhead type diffuser for uniform gas flow in the upper process chamber, and is perpendicular to or horizontal to the substrate in the closed reaction space. Or the purge gas is injected.
The method of claim 15,

The process chamber further comprises a heating and temperature control device in the process chamber to prevent condensation or by-products of the process gas or purge gas or exhaust gas.
The method of claim 2,

A process gas supply unit or purge gas supply unit or gas exhaust unit of said process chamber is characterized by using a supply pipe or an exhaust pipe shared with at least one or more other process chambers.
The method of claim 2,

The process chamber and the lower process chamber is moved up and down to form an uneven step on the outside of the combined portion of the upper process chamber and the lower process chamber for minimizing the deposition area except for the process progress board after joining. Atomic layer deposition apparatus further comprises a configuration for supplying a predetermined amount of purge gas to the outside of the portion to minimize the deposition of one side including the sealing portion excluding the substrate
At least two vacuum chambers are stacked in a process module,

Vacuum chamber is an atomic layer deposition method performed in a multi-type atomic layer deposition apparatus having at least one process chamber,

When the substrate and the mask are loaded in the process chamber, and the substrate and the mask are located by an alignment device including an image information processing device, etc.

Combining the upper process chamber with the lower process chamber to form a sealed reaction space, and performing an atomic layer deposition process on the substrate in the closed reaction space.
The method of claim 2,

The upper process chamber and the lower process chamber each mount the substrate,

Mounted on the upper process chamber in the reaction space during the deposition process.

And the deposition process is simultaneously performed on a substrate and a substrate mounted on the lower process chamber.
The method of claim 2,

The upper process chamber is divided into at least two regions with respect to the substrate.

And at least two atomic layer deposition process portions capable of performing an atomic layer deposition process for each region, wherein the atomic layer deposition process portion includes a gas supply portion and a gas exhaust portion.
The method of claim 2,

The choice of deposition material or deposition method or maintenance of the process chamber is made to be possible simultaneously or separately for each unit process module including the vacuum chamber, and between stacked vacuum chambers to minimize external influence of each unit process module. An atomic layer deposition apparatus comprising a buffer space for pressure control and stiffness reinforcement.