WO2016199980A1

WO2016199980A1 - Chemical vapor deposition system using initiator

Info

Publication number: WO2016199980A1
Application number: PCT/KR2015/009511
Authority: WO
Inventors: 이재호
Original assignee: 주식회사 선익시스템
Priority date: 2015-06-09
Filing date: 2015-09-10
Publication date: 2016-12-15

Abstract

The present invention relates to a chemical vapor deposition system using an initiator, the system comprising: a first chamber that forms a polymerization reaction site by feeding an initiator and a monomer in order to cause a polymerization reaction between the initiator and the monomer on the surface of a substrate; a second chamber that forms a polymer through a polymerization reaction between the initiator and the monomer after the substrate having the polymerization reaction site formed thereon by the first chamber is introduced thereinto; a third chamber that stops the reaction in order to control the thickness of deposition by removing the residual initiator after the substrate having the polymer formed thereon is introduced thereinto; and a substrate transfer device for moving the substrate from the first chamber to the third chamber via the second chamber, whereby it is possible to enhance the deposition speed and to reduce the material consumption when carrying out the deposition process using the initiator.

Description

Chemical Vapor Deposition System Using Initiator

The present invention relates to a chemical vapor deposition system using an initiator, and more particularly, to a chemical vapor deposition system capable of significantly reducing material consumption by improving deposition speed and maximizing material use efficiency in a deposition process using an initiator. It is about.

Recently, a semiconductor device or a display device is manufactured through various manufacturing processes including a deposition process. Among these various manufacturing processes, a process of depositing a deposition material using a chemical vapor deposition system is essential.

Accordingly, many techniques have been proposed and applied in connection with chemical vapor deposition (hereinafter referred to as CVD).

Among these conventional techniques, Korean Patent Application Publication No. 10-2015-0057679 (name of the invention: a substrate cooling apparatus and a chemical vapor deposition apparatus including the same.

According to the prior art 1, the cooling device includes an initiator inlet plate into which the initiator is introduced such that the first and second reaction gases react, causing the plurality of reaction gases to react due to the initiator.

Here, the initiator is decomposed in the form of radical ions, and since the energy of the radical ions decreases according to the configuration of the access path (curve flow, volume, etc.) of the initiator, in order to minimize collisions until the radical ions formed at the top are ejected to the nozzle. It was configured to be ejected from the top.

CVD using an initiator, such as Prior Art 1, requires that the initiator and monomer be first adsorbed onto the substrate to form a polymerization site in order to cause polymerization of the initiator and monomer on the substrate surface.

Specifically, Initiator CVD consists of three stages: ① Site generation (monomer adsorption site formation on the substrate) → ② Polymerization (polymer formation through polymerization of initiator and monomer) → ③ Termination (controlling deposition thickness by removing residual initiator) Processes can be distinguished, and such processes form polymers on the substrate surface.

1 is a cross-sectional view schematically showing the configuration of an example of a conventional chemical vapor deposition system. In the conventional CVD, an initiator 2 and a plurality of

monomers

4 and 6 are simultaneously introduced into one chamber 10, The initiator (2) and monomer (4) (6) simultaneously introduced form a monomer adsorption site on the substrate (20), and then form a polymer through a polymerization reaction of the initiator (2) and the monomer (4) (6).

In this case, in order to induce the polymerization reaction of the initiator (2) and the monomer (4) (6) on the substrate 20, a gaseous substance should be introduced into the chamber to create a certain concentration of atmosphere.

In this conventional technique, the size of the chamber may be increased according to the structure of the apparatus for the deposition process. During the deposition process, the vapor phase material should fill the entire interior of the chamber, and the input and discharge of the material may be performed to maintain a constant pressure in the chamber. The material must be continually consumed and the material that does not participate in the reaction required to form the polymer should be discharged to a vacuum pumping line (not shown), which causes a problem of high consumption of the material.

In particular, in the case of a large substrate, as the size of the substrate increases, the size of the deposition chamber also increases, which requires more material consumption, thereby reducing the efficiency of the material.

In addition, since the concentration of the gaseous substance in each position may vary according to the material flow of the gaseous phase in the chamber and the vacuum pumping direction, it is difficult to secure deposition uniformity of the substrate thin film.

In addition, CVD using an initiator requires the presence of an initiator to form a polymer thin film, but there is a problem in that thickness reproducibility is difficult by a residual initiator after forming a thin film of a desired thickness. In addition, when the deposition process is performed in one chamber, energy (heat, plasma, etc.) transferred from an activation source (wire heater) is transferred to the entire surface of the substrate to raise the temperature of the substrate, thereby making it difficult to secure temperature uniformity. There was a problem.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems. In the chemical vapor deposition system using an initiator, a separate chamber for forming a polymerization site of a substrate is formed, thereby improving a deposition rate and a material. It is to provide a chemical vapor deposition system that can reduce the consumption of, and to ensure the deposition uniformity of the deposited substrate thin film is deposited to a uniform thickness of the deposition material.

In addition, the linear evaporation source is used to minimize damage (heat, plasma, etc.) transferred to the substrate, and most of the material discharged from the nozzle is distributed in a narrow linear evaporation source space, so that most of the supplied material participates in the deposition polymerization reaction. Accordingly, to provide a chemical vapor deposition system that can minimize the leakage of gaseous substances into the chamber outside the substrate to maximize the efficiency of use of the substance.

In addition, it is possible to secure a narrow deposition area to provide a chemical vapor deposition system that can be applied to the process of roll-to-roll (roll to roll) flexible substrate as well as plate-like substrate.

In addition, since a gaseous substance exists in a narrow area, it is easy to control the concentration of the gaseous substance, thereby providing a chemical vapor deposition system which is advantageous in securing overall substrate uniformity.

In order to achieve the above object, in the present invention, a polymerization reaction of an initiator and a monomer is caused to occur on the surface of a substrate, and a first chamber is formed in which the initiator and the monomer are added to form a polymerization site, and a polymerization site is formed in the first chamber. A second chamber for forming a polymer through polymerization of the initiator and the monomer after the substrate is introduced, and a third chamber for stopping the reaction to control the deposition thickness by removing the residual initiator after the substrate in which the polymer is formed is introduced; And a substrate transfer device for moving the substrate from the first chamber to the third chamber via the second chamber, wherein the process of polymer thin film formation is carried out in each chamber step by step. A system is provided.

The third chamber is characterized in that the thickness is controlled by blocking the polymerization reaction by additionally adding an initiator to remove the residual initiator.

In addition, the first to third chambers may control the chamber pressure through intermittent pumping as needed without forming a gaseous fluid flow through a gaseous substance input and vacuum pumping in real time.

In the present invention, the substrate transfer device is installed between the first chamber and the second chamber and between the second chamber and the third chamber, the door opening and closing when transferring the substrate to each chamber, the first chamber, Outlets and inlets serving as passages of the substrates formed at positions where the doors are installed in the second chambers and the third chambers, and a transport apparatus for transferring the substrates between the chambers through the outlets and the inlets; It may include a control unit for controlling the operation of the transportation device and the opening and closing of the door.

Here, the transport device may be made of a robot arm horizontally reciprocating while entering and exiting the outlet and the inlet.

Alternatively, the transport apparatus may include a conveyor apparatus including a plurality of rollers for directly placing or transporting the substrate into the first to third chambers, and a driving apparatus for driving the conveyor apparatus. Can be.

In this case, the conveyor apparatus is composed of an internal conveyor device installed inside the first to third chambers, and an external conveyor device installed outside the first to third chambers to connect the chambers. The conveyor apparatus and the external conveyor apparatus may be driven through separate drives.

In the present invention, at least two or more monomers may be introduced into the first chamber or the second chamber to form a vapor deposition material atmosphere.

On the other hand, in order to achieve the above object, in the present invention, a chamber for forming a polymer through the polymerization reaction of the initiator and the monomer on the substrate surface, and the initiator and the monomer is added to a part of the substrate surface in the chamber to polymerize Using an initiator comprising a plurality of linear evaporation source for the step of proceeding the polymer thin film forming process through the reaction, and a moving means for moving the substrate or the linear evaporation source to proceed the polymer thin film forming process over the entire area of the substrate A linear chemical vapor deposition system is provided.

The linear evaporation source generates a polymerization reaction between the initiator and the monomer through a polymerization reaction of the initiator and the monomer on the first evaporation source into which the initiator and the monomer are added to form a monomer adsorption site, and the substrate on which the monomer adsorption site is formed in the first evaporation source. A second evaporation source for forming a polymer and a third evaporation source for stopping the reaction to control the deposition thickness by removing the residual initiator on the substrate on which the polymer is formed.

Here, in the third evaporation source, by adding an initiator to remove the residual initiator, the thickness can be controlled by blocking the polymerization reaction.

The first to third evaporation sources may include a plurality of nozzles for injecting a deposition material to be deposited on a substrate, and an evaporation source for distributing the deposition material discharged through the nozzle in a narrow volume linear space to participate in the deposition polymerization reaction. A guide and a wire heater provided inside the evaporation source guide and activating the deposition material ejected through the nozzle by radicals may be included.

In this case, the plurality of nozzles may be spaced apart from each other at a predetermined interval.

In addition, the evaporation source guide may be configured to guide the deposition material to a position adjacent to the substrate so that the deposition material participates in the deposition polymerization reaction on the substrate surface.

The wire heater may be formed in plural, and the plurality of wire heaters may be spaced apart from each other at a predetermined interval.

On the other hand, the substrate is made of a flexible substrate, the moving means may be made of a roll to roll (roll to roll) device.

The roll-to-roll apparatus includes a supply roller for providing the flexible substrate to a deposition position where the deposition material is deposited, a recovery roller for recovering the flexible substrate on which the deposition material is deposited, and between the supply roller and the recovery roller. A direction roller positioned to assist the flexible substrate to be continuously supplied to the deposition position and to pass through the deposition position, and to receive the substrate from the supply roller side so that the deposition material is deposited on the substrate. It may include a supporter roller (supporter roller) for supporting the substrate.

The supporter roller may be provided with a substrate cooling means for cooling the heat received while the deposition material is deposited on the substrate.

In addition, the substrate is made of a plate-like substrate, the movement means is a horizontal movement to reciprocate the substrate or linear evaporation source in the horizontal direction to scan the entire area of the substrate for the process of forming a polymer thin film By means.

In this case, the horizontal moving means includes a conveyor device including a plurality of rollers for directly placing the substrate to move the substrate to the position of the first to third evaporation source, and a driving device for driving the conveyor device. can do.

According to the present invention as described above, the present invention has the effect of improving the deposition rate and reducing the consumption of the material by configuring a separate chamber for forming the polymerization site of the substrate.

In addition, by controlling the chamber pressure through intermittent pumping as needed without forming gas phase fluid flow through the gas phase material input and vacuum pumping in real time, the position according to the gas phase material flow and vacuum pumping direction It is possible to secure the deposition uniformity of the substrate thin film by preventing the concentration of the gaseous phase material different from each other.

In addition, the present invention has the effect of improving the deposition rate and at the same time reduce the consumption of the material by configuring a plurality of linear evaporation source for the step of proceeding the polymer thin film forming process through the polymerization of the substrate.

In addition, the linear evaporation source is used to minimize damage (heat, plasma, etc.) transferred to the substrate, and most of the material discharged from the nozzle is distributed in a narrow linear evaporation source space, so that most of the supplied material participates in the deposition polymerization reaction. By doing so, it is possible to minimize the leakage of gaseous substances into the chamber other than the substrate to maximize the material use efficiency.

In addition, it is possible to secure a narrow deposition area, so that it is applicable to the process of roll-to-roll (flexible) substrate as well as the plate-like substrate.

In addition, since the gaseous substance exists in a narrow region, it is easy to control the concentration of the gaseous substance, and thus, it is advantageous to secure the overall uniformity of the substrate.

1 is a cross-sectional view briefly showing the configuration of an example of a conventional chemical vapor deposition system.

2 is a cross-sectional view showing the overall configuration of the chemical vapor deposition system of the present invention.

3 to 4 illustrate one embodiment of a substrate transfer apparatus in the chemical vapor deposition system of the present invention, and are sectional views showing a substrate transfer process.

Figure 5 is a cross-sectional view showing an embodiment of a linear chemical vapor deposition system of the present invention, showing an example applied to the process of a roll to roll flexible (flexible) substrate.

6 is a cross-sectional view showing another embodiment of the linear chemical vapor deposition system of the present invention.

7 is a perspective view showing a linear evaporation source in the chemical vapor deposition system of the present invention.

8 is a cross-sectional view taken along the line A-A in FIG.

Hereinafter, a preferred embodiment with reference to the accompanying drawings to be described in more detail with respect to the present invention will be described.

Referring to Figure 2, the chemical vapor deposition system using the initiator according to an embodiment of the present invention is ① Site generation (formation of monomer adsorption site on the substrate) → ② Polymerization (polymer formation through polymerization of the initiator and monomer) → (3) The process of the termination (controlling the deposition thickness by removing the residual initiator) is configured to proceed in the three-stage chamber.

Specifically, the present invention causes a polymerization reaction between the initiator 112 and the

monomers

114 and 116 on the surface of the substrate 20. The initiator 112 and the

monomers

114 and 116 are introduced to form a polymerization site. A second chamber in which the polymer is formed through polymerization of the initiator 122 and the

monomers

124 and 126 after the first chamber 110 and the substrate having the polymerization site formed therein are introduced from the first chamber 110. And a third chamber 130 which stops the reaction to control the deposition thickness by removing the residual initiator after the substrate on which the polymer is formed is introduced. There is a characteristic to proceed in.

The first chamber 110, the second chamber 120, and the third chamber 130 provide a space isolated from the outside to allow a process of depositing a deposition material on the substrate 20. The interior of the chambers is in a vacuum state, and the deposition process is performed in a vacuum. Such a chamber is provided with a vacuum pumping line (not shown) for establishing a vacuum state.

In order to introduce the initiator 112, the

monomers

114, 116, etc. into the first chamber 110, the second chamber 120, and the third chamber 130, a showerhead assembly (not shown) is provided on the upper portion of the chamber. None) can be installed to allow the reaction gas to flow through. In this case, an initiator and a plurality of monomers are simultaneously introduced through the showerhead assembly to form a structure which is ejected downward.

In addition, at least two monomers and an initiator are added to the first chamber 110 or the second chamber 120 to form a vapor deposition material atmosphere. That is, in the present embodiment, two kinds of monomers are introduced and ejected, but the present invention is not limited thereto, and three or more kinds of reaction gases may be introduced and ejected. Here, the initiator is decomposed in the form of radical ions, and since the energy of the radical ions decreases according to the configuration of the entry path (curve, volume, etc.) of the access path, in order to minimize the collision before the radical ions formed at the top are ejected into the nozzle. It is preferable to configure so that it may eject from the top.

Meanwhile, in the present invention, the first chamber 110 to the third chamber 130 to prevent the concentration of the vapor phase substance deposited on the substrate according to the position according to the material flow of the gas phase in the chamber and the vacuum pumping direction. ) Allows the chamber pressure to be controlled through intermittent pumping as needed, without the formation of gaseous fluid flow through gaseous material input and vacuum pumping in real time.

That is, in the prior art, an initiator and a plurality of monomers are simultaneously introduced into one chamber to form a polymer, and then materials that do not participate in the reaction required for polymer formation are discharged to a vacuum pumping line, so that all processes are performed in one chamber. Is done. At this time, since the gaseous fluid flow in the chamber due to the input of the gaseous substance is generated and the vacuum pumping direction is generated when discharging a substance that does not participate in the reaction, the concentration of the gaseous substance by location varies according to the gaseous fluid flow and the vacuum pumping direction. Will be.

However, in the present invention, the process of controlling deposition thickness by (1) forming a monomer adsorption site on a substrate, (2) forming a polymer through polymerization of an initiator and a monomer, and (3) removing a residual initiator is performed in a separate chamber for each process. By minimizing the flow of gaseous material, the method of adding an initiator by removing residual initiator is not a method of discharging a material that does not participate in the reaction after polymer formation at once but by vacuum pumping line. By using this, the flow of gaseous substances due to the vacuum pumping direction is minimized.

On the other hand, when pumping is required, the chamber pressure can be controlled by intermittent pumping in each chamber, thereby minimizing the flow of the gaseous substance due to the vacuum pumping direction, thereby preventing the concentration of the gaseous substance deposited on the substrate by location. As a result, the deposition uniformity of the substrate thin film can be secured.

In the present invention as described above, in order to remove the residual initiator in the third chamber 130, by additionally adding an initiator 132, the initiator 132, which is decomposed and introduced into the radical ion form, is combined with the residual initiator to form a molecular form. By doing so, the residual initiator can be removed quickly, and the polymerization reaction can be blocked to facilitate the thickness control of the thin film.

This invention includes a substrate transfer device for moving a substrate in each chamber. That is, a substrate transfer apparatus is provided for sequentially moving the process to each chamber while moving the substrate from the first chamber 110 to the third chamber 130 via the second chamber 120.

In the present invention, the substrate transfer device is installed between the first chamber 110 and the second chamber 120, and between the second chamber 120 and the third chamber 130 to each of the substrate 20 The substrate is formed and transported in a position where the door 220 is installed in the door 220 and the first chamber 110, the second chamber 120, and the third chamber 130. It may include an outlet and an inlet which is a passage of the passage, a transport apparatus for transferring the substrate between the chamber through the outlet and the inlet, and a control unit for controlling the operation and opening and closing of the door.

The outlet and the inlet are formed to be opened in the side of the chamber for the loading and unloading of the substrate, the door 220 is movable between the outlet and the inlet to move the opening and closing the outlet and the inlet.

When configuring a transport device with the robot arm, a conventional known robot arm is installed between the first chamber 110 and the second chamber 120 and between the second chamber 120 and the third chamber 130. Can be applied to transfer the substrate 20 to each chamber.

In this case, the door 220 is closed when the process proceeds in each chamber, but when the process is completed in one chamber and the substrate is to be transferred to the next chamber, the door 220 is opened by the control unit so that the robot arm opens the outlet and The substrate 20 can be transferred through the inlet.

Since the known technology is applicable to the configuration of such a robot arm, a detailed description thereof will be omitted in the present invention.

On the other hand, the substrate transfer apparatus of the present invention can be applied in various configurations in addition to the above-described robot arm.

3 to 4 illustrate an embodiment of a substrate transfer apparatus in the chemical vapor deposition system of the present invention, and is a cross-sectional view illustrating a substrate transfer process through a roller structure.

3 to 4, the transport apparatus includes a plurality of rollers for directly loading or unloading the substrate 20 into the first chamber 110 or the third chamber 130. It may include a conveyor device including a 210, and a driving device (not shown) for driving the conveyor device.

Since the driving device may be a conventionally known technology such as a motor for driving the conveyor device, a detailed description thereof will be omitted.

In addition, the conveyor device is an internal conveyor device installed in the first chamber 110 to the third chamber 130, and the first chamber 110 to the third chamber 130 is installed outside the chamber between It can be divided into an external conveyor to connect. That is, it is provided with an internal conveyor device for transferring the substrate to proceed with the process inside the chamber, and an external conveyor device for transferring the substrate is completed between the chambers. In this case, the internal conveyor device and the external conveyor device may be driven through respective driving devices, and the control of the driving device is controlled by the controller to transfer the substrates inside the chamber and the substrates outside the chamber, respectively. Take control.

FIG. 3 is a view illustrating a space between the first chamber 110 and the second chamber 120. An outlet 110a is formed in the first chamber 110, and an inlet 120a is formed in the second chamber 120. The gate 230 is formed between the outlet 110a and the inlet 110b so that the door 220 opens and closes the gate 230. Although not shown in the drawings, the same structure may be applied between the second chamber 120 and the third chamber 130, and thus the illustration thereof is omitted.

The substrate transfer device is driven in a state in which the substrate 20 on which the process is completed is placed on the roller 210 when the formation of the monomer adsorption site on the substrate 20 is completed in the first chamber 110. In addition to being moved by a device, the control unit controls the opening and closing of the door 220 to open the door 220, so that the substrate 20 passes through the outlet 110a and the inlet 120a. To be transferred to the second chamber 120.

Subsequently, the substrate 20 transferred to the second chamber 120 forms a polymer through a polymerization reaction between the initiator 122 and the

monomers

124 and 126, and the third chamber 130 is formed in the same manner as described above. After being transferred to, by removing the residual initiator in the third chamber 130, it is possible to proceed to the polymer thin film forming process in three steps.

As described above, the chemical vapor deposition system using the initiator according to the present invention has an effect of improving the deposition rate and reducing the consumption of materials by configuring a separate chamber for forming a polymerization reaction site of the substrate. .

Hereinafter, a preferred embodiment with reference to the accompanying drawings will be described in order to understand the present invention constituting a plurality of linear evaporation source for proceeding step of the polymer thin film forming step in more detail.

Figure 5 is a cross-sectional view showing an embodiment of the linear chemical vapor deposition system of the present invention, shows an example applied to the process of a roll to roll (flexible) substrate, Figure 6 is a linear chemistry of the present invention 7 is a cross-sectional view showing another embodiment of the vapor deposition system, Figure 7 is a perspective view showing a linear evaporation source in the chemical vapor deposition system of the present invention, Figure 8 is a cross-sectional view taken along line AA in FIG.

In the linear chemical vapor deposition system using the initiator of the present invention, ①Site generation (formation of monomer adsorption site on the substrate) → ②Polymerization (polymer formation through polymerization of initiator and monomer) → ③Tremination (removal by removing residual initiator) Control the thickness) is configured to proceed step by step in one chamber (100).

To this end, in the present invention, a chamber 100 for forming a polymer through polymerization of an initiator and a monomer on the surface of the substrate 20 and an initiator and a monomer are added to a part of the surface of the substrate in the chamber 100. A plurality of linear evaporation sources 400 and the substrate 20 or the linear evaporation sources 400 for moving the polymer thin film formation process step by step through the polymerization reaction to move the polymer thin film formation process over the entire area of the substrate It includes a moving means for.

The chamber 100 provides a space isolated from the outside so that the deposition material is deposited on the substrate 20. The interior of the chamber 100 is in a vacuum state, and the deposition process is performed in a vacuum. The chamber 100 is provided with a vacuum pump (not shown) for forming a vacuum state.

In the chamber 100, a plurality of linear evaporation sources 400 are provided to step a polymer thin film forming process through a polymerization reaction by adding an initiator and a monomer to a part of the substrate surface. The linear evaporation sources 400 are provided. As shown in FIG. 5, three evaporation sources are formed so that three steps of forming a polymer can be performed at each evaporation source.

Specifically, the linear evaporation source 400 is a first evaporation source (400a) to form a monomer adsorption site by injecting the initiator and monomer to cause the polymerization reaction of the initiator and the monomer on the surface of the substrate 20, and the first evaporation source ( After the substrate on which the monomer adsorption site is formed is introduced at 400a), a second evaporation source 400b for forming a polymer through polymerization of the initiator and the monomer is removed, and the residual initiator is removed after the substrate on which the polymer is formed is introduced. And a third evaporation source 400c for stopping the reaction for control.

In order to introduce the initiator and the monomer into the first evaporation source 400a, the second evaporation source 400b, and the third evaporation source 400c, a showerhead assembly (not shown) is installed on the upper part of the evaporation source, thereby reacting the reaction gas. Can be introduced. In this case, an initiator and a plurality of monomers are simultaneously introduced through the showerhead assembly to form a structure which is ejected downward.

In addition, in the first evaporation source 400a or the second evaporation source 400b, at least two or more monomers and an initiator are added to form a vapor deposition material atmosphere. That is, in the present embodiment, two kinds of monomers are introduced and ejected, but the present invention is not limited thereto, and three or more kinds of reaction gases may be introduced and ejected. Here, the initiator is decomposed in the form of radical ions, and since the energy of the radical ions decreases according to the configuration of the entry path (curve, volume, etc.) of the access path, in order to minimize the collision before the radical ions formed at the top are ejected into the nozzle. It is preferable to configure so that it may eject from the top.

Such an evaporation source has the same structure, and as shown in FIG. 8, a plurality of nozzles 420 for injecting a deposition material to be deposited on the substrate 20 and a deposition material discharged through the nozzle 420 are narrow. Evaporation source guide 410 distributed in a linear space of the volume to participate in the deposition polymerization reaction, provided inside the evaporation source guide 410, the deposition material ejected through the nozzle 420 radical (radical) It may include a wire heater 430 for activating.

The plurality of nozzles 420 may be spaced apart from each other at regular intervals so as to spray the deposition material evenly on the surface of the substrate 20.

In addition, the evaporation source guide 410 should be formed to guide the deposition material to a position adjacent to the substrate 20 so that the deposition material participates in the deposition polymerization reaction on the substrate surface. That is, the evaporation source guide 410 forms a narrow volume of linear space so that the deposition material participates in the deposition polymerization reaction on the substrate surface, as shown in FIG. 7, and is formed in a box shape extending in the width direction of the substrate 20. To achieve. In this case, as shown in FIG. 8, the evaporation source guide 410 has a cross-sectional shape of '┌┐' having a lower surface opened, and the substrate 20 is placed on the opened lower surface.

The nozzle 420 is formed at a predetermined interval on the evaporation source guide 410, the wire heater 430 is provided between the nozzle 420 and the substrate 20. The wire heater 430 radically activates the deposition material ejected through the nozzle 420 of the evaporation source. Here, when the deposition material is an initiator, the initiator is activated by the wire heater 430 as a radical.

The wire heater 430 is composed of a plurality of heater wires, the radicals are activated by the heat energy supplied from the heater wires.

As shown in FIG. 8, the plurality of heater wires are preferably spaced apart from each other at a predetermined interval with respect to the neighboring heater wires. Here, each of the plurality of heater wires may be arranged to correspond to each of the plurality of nozzles 420. As shown in FIG. 8, a shape in which a distance between heater wires is uniformly distributed regardless of the number of nozzles It is possible.

In the present invention as described above, in order to remove the residual initiator in the third evaporation source (400c), by additionally adding an initiator 132, the initiator 132 is decomposed into radical ions form and combined with the residual initiator to form a molecular By doing so, the residual initiator can be removed quickly, and the polymerization reaction can be blocked to facilitate the thickness control of the thin film.

As described above, the present invention minimizes damage (heat, plasma, etc.) transmitted from the wire heater 430 to the substrate using the linear evaporation source 400, and the most of the material discharged from the nozzle 420 is of a narrow size. By distributing the space in the evaporation source 400, most of the supplied material participates in the deposition polymerization reaction, thereby minimizing leakage of the gaseous material into the chamber outside the substrate, thereby maximizing the material use efficiency.

On the other hand, the substrate 20 is made of a flexible substrate, the moving means may be made of a roll to roll (roll to roll) device.

The roll-to-roll apparatus includes a supply roller 250 for providing the flexible substrate 30 to a deposition position where the deposition material is deposited, and a recovery roller 260 for recovering the flexible substrate 30 on which the deposition material is deposited. And the

direction rollers

230 and 240 positioned between the supply roller 250 and the recovery roller 260 to continuously supply the flexible substrate to the deposition position and to pass through the deposition position. And a supporter roller 300 supporting the substrate by receiving the substrate from the supply roller 250 so that the deposition material may be deposited on the substrate.

Unlike a conventional substrate, the flexible substrate 30 is flexible, and unlike the glass substrate, the flexible substrate 30 is continuous. Therefore, the flexible substrate 30 is transferred to the deposition position, and the flexible substrate 30 on which the deposition material is deposited is recovered from the deposition position. This process may be performed until all of the flexible substrate 30 wound on the supply roller 250 is deposited.

The supply roller 250 is wound on the flexible substrate 30 and is in a state before the deposition material is deposited. As the feed roller 250 rotates, the flexible substrate 30 wound up is released, and the flexible substrate 30 released from the feed roller 250 is moved to the deposition position.

The recovery roller 260 recovers the flexible substrate 30 on which the deposition material is deposited at the deposition position. In order to recover the flexible substrate 30, the recovery roller 260 is also rotated and recovered by winding the flexible substrate 30.

The

direction rollers

230 and 240 are positioned between the supply roller 250 and the recovery roller 260 to assist the flexible substrate 30 to be continuously supplied to the deposition position and to pass through the deposition position. As shown in FIG. 5, the

direction rollers

230 and 240 play an auxiliary role of positioning the flexible substrate 30 released from the supply roller 250 so as to pass through the deposition position.

In this way, the flexible substrate 30 is released from the supply roller 250 and is deposited while passing through the deposition position by the assistance of the

direction rollers

230 and 240, and the finished flexible substrate 30 is finally recovered by a recovery roller ( 260 is recovered while winding.

The supporter roller 300 receives the flexible substrate 30 from the supply roller 250 side to support the flexible substrate 30 so that the deposition material may be deposited on the flexible substrate 30. And the supporter roller 300 is more preferably provided with a substrate cooling means that can cool the heat received while the deposition material is deposited on the flexible substrate 30.

Here, the arrangement of the plurality of evaporation sources 400 is supported so that the distance between the plurality of evaporation sources 400 and the flexible substrate 30 can be kept constant while the flexible substrate 30 is supported by the supporter roller 300. It is preferable to form a virtual curved surface corresponding to the outer surface of the roller 300.

Here, the shape of the virtual curved surface formed by the arrangement of the plurality of nozzles 420 is disposed at a predetermined distance with respect to the axis of rotation of the support controller 300, the virtual curved surface of which the cross section forms a floating arc It is preferably in the form of. In this case, since the distance (distance) with the nozzle 420 is kept constant while the flexible substrate 30 supported by the support controller 300 is deposited, a more uniform deposition thickness can be realized.

In addition, since the support controller 300 can rotate, damage to the lower surface of the flexible substrate 30 is suppressed while supporting the flexible substrate 30 while being in contact with it.

In addition, the support controller 300 may further include a substrate cooling unit capable of cooling the heat received while the deposition material is deposited on the flexible substrate 30.

For example, as the substrate cooling means, the coolant may pass through the support controller 300 along the central axis of rotation, thereby allowing the support controller 300 to cool the flexible substrate 30.

In addition, the substrate 20 may be formed of a plate-like substrate, as shown in FIG.

In this case, the moving means comprises a horizontal moving means for reciprocating the substrate 20 or the linear evaporation source 400 in a horizontal direction so as to scan the entire area of the substrate for the process of forming a polymer thin film. Can be.

In this case, the horizontal moving means is a conveyor apparatus including a plurality of rollers for moving the substrate to the position of the first evaporation source (400a) to the third evaporation source (400b) directly placed on the substrate 20, the conveyor It may include a driving device for driving the device.

When the horizontal movement means is completed to form the monomer adsorption site on the substrate 20 in the first evaporation source (400a), the substrate 20, the process is completed is placed on the roller in the drive device Is moved so that it can be transferred from the first evaporation source (400a) to the second evaporation source (400b).

Subsequently, the substrate 20 transferred to the second evaporation source 400b forms a polymer through a polymerization reaction of an initiator and a monomer, and is transferred to the third evaporation source 400c in the same manner as described above, and then a third evaporation source ( By removing the residual initiator in 400c), the polymer thin film forming process can proceed in three steps.

According to the present invention as described above, the present invention by forming a plurality of linear evaporation source for the step of proceeding the polymer thin film forming process through the polymerization of the substrate, it is possible to improve the deposition rate and reduce the consumption of the material It works.

As described above, the detailed description of the present invention has been made by the embodiments with reference to the accompanying drawings, but since the above-described embodiments have only been described with reference to a preferred embodiment of the present invention, the present invention has been described above. It should not be understood to be limited only to the embodiments, and the scope of the present invention should be understood by the claims and equivalent concepts described below.

The present invention as described above can form a separate chamber for forming the polymerization reaction site of the substrate to improve the deposition rate and to reduce the consumption of the material, and to prevent the concentration of the gaseous substance for each position of the substrate to prevent the substrate Since the deposition uniformity of the thin film can be secured, it will be referred to as an invention having high industrial applicability.

In addition, since it is possible to secure a narrow deposition region, it can be applied not only to a plate-shaped substrate but also to a process of a roll to roll flexible substrate, and thus it can be used to manufacture a flexible substrate deposited using a linear evaporation source.

Claims

A first chamber in which the initiator and the monomer are added to form a monomer adsorption site to cause polymerization of the initiator and the monomer on the substrate surface;

A second chamber in which the polymer is formed through polymerization of an initiator and a monomer after the substrate on which the polymerization reaction site is formed is introduced into the first chamber;

A third chamber in which the reaction is stopped to control the deposition thickness by removing the residual initiator after the substrate on which the polymer is formed is introduced; And

A substrate transfer device for moving a substrate from the first chamber to a third chamber via a second chamber;

Including;

Chemical vapor deposition system using an initiator, characterized in that the polymer thin film forming process is carried out in each chamber step by step.
The method according to claim 1,

Chemical vapor deposition system using an initiator in the third chamber is added to the initiator to remove the residual initiator to block the polymerization reaction by controlling the thickness.
The method according to claim 1,

The first to third chambers do not form gaseous fluid flow through the gas phase material injection and vacuum pumping in real time, and if necessary, control the chamber pressure through intermittent pumping. Deposition system.
The method according to claim 1,

The substrate transfer apparatus includes a door installed between the first chamber and the second chamber and between the second chamber and the third chamber to open and close the substrate when the substrate is transferred to each chamber;

Outlets and inlets serving as passages of substrates formed at positions where the doors are installed in the first chamber, the second chamber, and the third chamber;

A transport apparatus for transferring the substrate between the chamber through the outlet and the inlet;

A control unit for controlling the operation of the transportation device and opening and closing of the door;

Chemical vapor deposition system using an initiator comprising a.
The method according to claim 4,

The transport apparatus is a chemical vapor deposition system using an initiator, characterized in that consisting of a robot arm horizontally reciprocating while entering and exiting the outlet and the inlet.
The method according to claim 4,

The conveying apparatus includes a conveyor apparatus comprising a plurality of rollers for directly placing or transporting the substrate into or out of the first to third chambers;

A driving device for driving the conveyor device;

Chemical vapor deposition system using an initiator comprising a.
The method according to claim 6,

The conveyor apparatus includes an internal conveyor installed in the first to third chambers;

Installed outside the first to third chambers made of an external conveyor device for connecting the chambers,

Chemical vapor deposition system using an initiator characterized in that the inner conveyor device and the outer conveyor device is driven through a separate drive device.
The method according to claim 1,

Chemical vapor deposition system using an initiator in the first chamber or the second chamber to form at least two monomers to form a vapor deposition material atmosphere.
A chamber for forming a polymer through polymerization of an initiator and a monomer on a substrate surface;

A plurality of linear evaporation sources for inputting an initiator and a monomer into a portion of the substrate surface in the chamber to step through a polymer thin film forming process through a polymerization reaction step by step; And

Moving means for moving the substrate or the linear evaporation source to perform a polymer thin film formation process over the entire area of the substrate;

Chemical vapor deposition system using an initiator comprising a.
The method according to claim 9,

The linear evaporation source may include a first evaporation source for introducing a monomer and a monomer to form a monomer adsorption site in order to cause polymerization of the initiator and the monomer;

A second evaporation source for forming a polymer through a polymerization reaction of an initiator and a monomer on a substrate on which a monomer adsorption site is formed in the first evaporation source; And

A third evaporation source for stopping the reaction to control the deposition thickness by removing the residual initiator on the substrate on which the polymer is formed;

Chemical vapor deposition system using an initiator comprising a.
The method according to claim 10,

Chemical vapor deposition system using an initiator in the third evaporation source by adding an initiator to remove the residual initiator to block the polymerization reaction to control the thickness.
The method according to claim 10,

The first to third evaporation sources include a plurality of nozzles for injecting a deposition material to be deposited on a substrate;

An evaporation source guide for distributing the deposition material discharged through the nozzle in a narrow volume linear space to participate in the deposition polymerization reaction; And

A wire heater provided inside the evaporation source guide and activating radically the deposition material ejected through the nozzle;

Chemical vapor deposition system using an initiator comprising a.
The method according to claim 12,

The plurality of nozzles are chemical vapor deposition system using an initiator, characterized in that spaced apart at a predetermined interval.
The method according to claim 12,

And the evaporation source guide is configured to guide the deposition material to a position adjacent to the substrate so that the deposition material participates in the deposition polymerization reaction on the substrate surface.
The method according to claim 12,

The wire heater is made of a plurality, the plurality of wire heaters chemical vapor deposition system using an initiator, characterized in that spaced at a predetermined interval disposed.
The method according to claim 9,

The substrate is made of a flexible substrate,

Chemical vapor deposition system using an initiator, characterized in that the moving means is a roll to roll (Roll to roll) device.
The method according to claim 16,

The roll-to-roll apparatus includes a supply roller for providing the flexible substrate to a deposition position where the deposition material is deposited;

A recovery roller for recovering the flexible substrate on which the deposition material is deposited;

A direction roller positioned between the supply roller and the recovery roller to assist the flexible substrate to be continuously supplied to the deposition position and to pass through the deposition position; And

A supporter roller supporting the substrate by receiving the substrate from the supply roller side so that the deposition material is deposited on the substrate;

Chemical vapor deposition system using an initiator comprising a.
The method according to claim 17,

The support roller is a chemical vapor deposition system using an initiator, characterized in that the substrate cooling means for cooling the heat received while the deposition material is deposited on the substrate.
The method according to claim 9,

The substrate is made of a plate-like substrate,

The moving means comprises a horizontal moving means for reciprocating the substrate or the linear evaporation source in a horizontal direction to scan the entire area of the substrate for the process of forming a polymer thin film, the chemical vapor using an initiator Deposition system.
The method according to claim 19,

The horizontal shifting means includes a conveyor apparatus including a plurality of rollers are placed directly to the substrate to move the substrate to the position of the first to third evaporation source;

A driving device for driving the conveyor device;

Chemical vapor deposition system using an initiator comprising a.