WO2017052100A1 - Exhaust device of wafer treating apparatus - Google Patents

Exhaust device of wafer treating apparatus Download PDF

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Publication number
WO2017052100A1
WO2017052100A1 PCT/KR2016/009823 KR2016009823W WO2017052100A1 WO 2017052100 A1 WO2017052100 A1 WO 2017052100A1 KR 2016009823 W KR2016009823 W KR 2016009823W WO 2017052100 A1 WO2017052100 A1 WO 2017052100A1
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WO
WIPO (PCT)
Prior art keywords
exhaust
wafer
processing apparatus
inert gas
wafer processing
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Application number
PCT/KR2016/009823
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French (fr)
Korean (ko)
Inventor
박세운
박우진
Original Assignee
주식회사 싸이맥스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 싸이맥스 filed Critical 주식회사 싸이맥스
Priority to CN201690001168.7U priority Critical patent/CN207966923U/en
Publication of WO2017052100A1 publication Critical patent/WO2017052100A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Definitions

  • the present invention relates to an exhaust device of a wafer processing apparatus, and more particularly, inert gas is blown toward the center of the wafer processing apparatus in side storage provided on both sides of the main body, and the lower side of the wafer processing apparatus at the upper blower.
  • the present invention relates to an exhaust device of a wafer processing apparatus that minimizes contamination of a wafer by generating wind to exhaust air to the outside through an exhaust portion.
  • the present invention relates to a wafer processing apparatus.
  • equipment for semiconductor manufacturing is equipped with several chambers.
  • a process chamber for forming a film having a predetermined thickness or implanting ions into the wafer For example, a process chamber for forming a film having a predetermined thickness or implanting ions into the wafer, a transfer chamber installed around the process chamber to transfer the wafer into the process chamber, A load lock chamber for forming a preliminary atmosphere into the atmosphere of the process chamber before transferring the wafer through the transfer chamber, and side storage for storing the wafer for a predetermined time under a certain temperature to remove the by-products remaining after the process.
  • kinds of chambers are included in semiconductor manufacturing facilities.
  • the above-described chambers are typically installed in close proximity to each other, and the wafer is configured to perform a process in the process chamber through the transfer chamber in the load lock chamber and sequentially transfer to the side storage.
  • side storage is used to remove the by-product gas generated around the wafer.
  • inert gas is supplied from the front side of the side storage (open side of the side storage into which the wafer is inserted) to the rear side, and the process gas and the fume floating in the FFU (Fan Filter Unit) and the wafer processing apparatus.
  • Foreign matters are introduced into the side storage to generate particles on the wafer, thereby increasing the defect rate, and various components in the wafer processing apparatus may cause corrosion and failure due to foreign substances such as process gases and fumes.
  • An object of the present invention devised to solve the above problems is to blow inert gas toward the center of the wafer processing apparatus in side storage installed on both sides of the main body to remove foreign substances such as process gas and fume in the side storage.
  • the blower installed in the upper part of the main body generates wind in the downward direction of the wafer processing apparatus to exhaust air to the outside through the exhaust portion to prevent corrosion and failure of various components in the wafer processing apparatus,
  • an exhaust device for a wafer processing device that is connected to the outside and prevents foreign substances such as process gases and fumes from leaking into the factory.
  • the present invention in the wafer processing apparatus is formed inside the main body wafer transport robot for transporting the wafer, located in the upper portion of the main body to blow the wind downward Generating blower; Side storages provided at both sides of the main body and injecting an inert gas toward a center of the wafer processing apparatus; And a base plate including one or more exhaust passages having an exhaust box disposed below, a perforated plate installed at an upper portion of the exhaust passage, an exhaust box installed at the lower portion of the exhaust passage and connected to an exhaust manifold, and at least one exhaust box. And an exhaust unit including an exhaust manifold having an exhaust outlet connected to the outside to exhaust air to the outside.
  • the exhaust box includes a lower exhaust box hole and an exhaust box tube extending from the exhaust box hole, the exhaust manifold, the inlet hole and the inlet pipe extending from the inlet hole and the lower exhaust It comprises a hole, characterized in that the exhaust box pipe and the inlet pipe is connected.
  • the exhaust box is characterized in that the contact surface with the base plate is sealed with a sealing tape
  • the perforated plate is characterized in that the contact surface with the base plate is sealed with a sealing tape
  • the base plate is sealed with a sealing tape
  • the contact surface with the main frame is sealed with a sealing tape.
  • Air is generated in the downward direction of the wafer processing apparatus to exhaust air to the outside through the exhaust portion to prevent corrosion and failure of various components in the wafer processing apparatus, and the exhaust portion is connected to the exhaust line in the factory and exhausted to the outside. It is possible to provide an exhaust device of a wafer processing apparatus that prevents foreign substances such as process gases and fumes from leaking out.
  • FIG. 1 is an illustration of a wafer processing apparatus in accordance with a preferred embodiment of the present invention.
  • FIG 2 is a side view of wafer storage in accordance with a preferred embodiment of the present invention.
  • 3 and 4 are perspective views of wafer storage according to a preferred embodiment of the present invention.
  • FIG. 5 is an exploded perspective view of a wafer storage and an inert gas injection unit according to a preferred embodiment of the present invention.
  • FIG. 6 is an exploded perspective view of a wafer storage and an inert gas supply unit according to a preferred embodiment of the present invention.
  • FIG. 7 is a perspective view of a side storage according to a preferred embodiment of the present invention.
  • FIG. 8 illustrates an example wafer storage and case in accordance with a preferred embodiment of the present invention.
  • FIG. 9 is an exemplary view illustrating opening and closing of a case according to a preferred embodiment of the present invention.
  • FIG. 10 is an exemplary view illustrating a case according to a preferred embodiment of the present invention.
  • FIG. 11 is an exploded perspective view of a base plate according to a preferred embodiment of the present invention.
  • FIG 12 and 13 are exemplary views illustrating that the perforated plate and the exhaust box are coupled to the base plate according to the preferred embodiment of the present invention.
  • FIG. 14 is a perspective view of an exhaust manifold according to a preferred embodiment of the present invention.
  • 15 is an exemplary view illustrating the exhaust flow of the wafer processing apparatus according to the preferred embodiment of the present invention.
  • 16 is an exemplary view of an exhaust device of the wafer processing apparatus according to the preferred embodiment of the present invention.
  • FIG. 1 is an exemplary view of a wafer processing apparatus according to a preferred embodiment of the present invention.
  • the exhaust device of the wafer processing apparatus of the present invention blows inert gas from the inert gas injection unit 200 formed on the rear surface of the wafer storage 100 to the front surface of the wafer storage 100, and thus, the wafer storage 100.
  • Inert gas and wafer processing apparatus blown from the wafer storage 100 by removing foreign substances such as process gas and fume on the inside and the surface of the wafer 112, and generating wind in the downward direction from the blower 500 located above. 10) foreign substances such as process gas and fume in the outside are discharged to the outside through the lower exhaust unit 400, and air is exhausted to the outside through the exhaust unit 400 to corrode various components in the wafer processing apparatus 10.
  • the wafer processing apparatus 10 which prevents from a fault is provided.
  • FIG. 2 is a side view of wafer storage according to a preferred embodiment of the present invention
  • FIGS. 3 and 4 are perspective views of wafer storage according to a preferred embodiment of the present invention
  • FIG. 5 is a wafer storage according to a preferred embodiment of the present invention.
  • the side storage 20 of the wafer processing apparatus 10 includes a wafer storage 100 and an inert gas injection unit 200.
  • the wafer storage 100 is formed with a wafer stacking shelf 110 that can be spaced at regular intervals to load the wafer 112, and a plurality of wafers 112 can be inserted into the wafer stacking shelf 110.
  • the front is open.
  • the wafer loading shelf 110 is formed with a plurality of slots protruded at regular intervals on both sides of the inside of the wafer storage 100 so that the end of the wafer 112 can be inserted.
  • an inert gas injection unit 200 through which an inert gas is injected is formed on the rear surface, and a window window 120 formed of a transparent material is formed on the top.
  • the window 120 allows a user who drives the wafer processing apparatus 10 to visually check the internal state of the wafer storage 100.
  • the inert gas injection unit 200 includes a nozzle cover 210, a nozzle plate 250, and a flow guide 240.
  • the nozzle cover 210 is formed with one or more supply ports 220 to be connected to the inert gas supply pipe 230 for supplying the inert gas to the front surface of the wafer storage 100, in the embodiment of the present invention the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228 are illustrated.
  • the nozzle plate 250 is formed with a plurality of injection holes.
  • the injection hole is positioned between each of the plurality of wafers 112 to be loaded, and the wafer loading shelf It is preferably formed to correspond to the interval of 110 and the injection hole is formed at a predetermined interval corresponding to the interval of the wafer loading shelf 110 mentioned above on the entire nozzle plate as shown in FIG.
  • Flow guide 240 is located between the nozzle cover 210 and the nozzle plate 250 to seal the spaced apart, and forms a partition for partitioning a predetermined space for each of the supply port 220 and
  • the first injection zone 242 corresponding to the first supply port 222 and the second injection zone corresponding to the second supply port 224 are divided by partitioning a predetermined space of each of the four supply ports 220.
  • the supply port 220 is formed of four supply ports 220, one side of the inert gas supply pipe 230 is connected to the first supply pipe 262 and one pipe, but the inert gas supply pipe ( The other side of 230 is preferably divided into four directions and connected to the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228, respectively.
  • inert gas supply pipe 230 When an inert gas supply pipe 230 is connected to the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228, the inert gas is supplied. Inert gas is diffused in each of the injection zone 242, the second injection zone 244, the third injection zone 246 and the fourth injection zone 248, and blown by the inert gas supply pipe 230. Inert gas is injected into the plurality of injection holes of the nozzle plate 250.
  • the thickness of the flow guide 240 is such that the inert gas is supplied from the respective supply port 220 and the thickness enough to spread in the entire area within each zone formed in the flow guide 240 It is preferable to have four supply ports 220 and partition them into four injection zones, because if one or more compartments are used, the inert gas is spread out in the zone and is efficiently injected evenly into the plurality of injection holes.
  • the plurality of injection holes formed in the nozzle plate 250 are spaced apart from each other by a predetermined interval so that the inert gas is injected into the space between two adjacent wafers 112 of the wafers 112 that are loaded. Since it is evenly formed on the whole, the surface of all the wafers 112 stacked on the wafer storage 100 and foreign matters such as process gas and fume in the wafer storage 100 can be removed as a whole.
  • the inert gas exits the front surface of the wafer storage 100 and is discharged toward the center of the wafer processing apparatus 10, and is located above the wafer processing apparatus 10.
  • the air is moved downward by the blower 500 generating the wind in the downward direction, and is exhausted to the outside by the exhaust unit 400 of the wafer processing apparatus 10.
  • FIG. 6 is an exploded perspective view of a wafer storage and an inert gas supply unit according to a preferred embodiment of the present invention
  • FIG. 7 is a perspective view of a side storage according to a preferred embodiment of the present invention.
  • the wafer storage 100 further includes an inert gas supply unit 260 below.
  • the inert gas supply unit 260 has a first supply pipe 262 and a second supply pipe 264 at the bottom, the first supply pipe 262 and the second supply pipe 264 is the inert gas supply 260 is connected to each other, the first supply pipe 262 is connected to the inert gas supply pipe 230, and further includes a flexible hose 280, the flexible hose 280 is the second The supply pipe 264 and the main supply pipe 270 for supplying the inert gas of the wafer processing apparatus 10 are connected.
  • the inert gas supply unit 260 may control the supply amount, supply pressure, and the like of the inert gas supplied to the wafer storage 100.
  • the inside of the inert gas supply unit 260 is further provided with a control means including a valve, actuator, gauge, etc. to adjust the supply amount and supply pressure of the inert gas supplied from the second supply pipe 264
  • the adjustment means may be easily applied to the general control means, so further description thereof will be omitted.
  • FIG 8 is an exemplary view showing a wafer storage and a case according to a preferred embodiment of the present invention
  • Figure 9 is an exemplary view illustrating opening and closing of the case according to a preferred embodiment of the present invention
  • Figure 10 is a preferred embodiment of the present invention
  • the side storage 20 includes a case 300 in which the wafer storage 100 is installed, and is formed on one side of a front portion of the case 300 and the wafer storage 100.
  • a hinge portion 310 hinged to the wafer processing apparatus 10 and a front side of the case 300 to be opened and closed from the wafer processing apparatus 10 so as to be opened and closed from the wafer processing apparatus 10. It further includes a coupling holder 330 detachable from the coupling protrusion formed.
  • the hinge part 310 may be securely opened and closed including three hinges, and the coupling protrusion 320 formed on the wafer processing apparatus 10 and the coupling formed on the case 300.
  • the holders 330 are coupled to each other to open and close.
  • the coupling protrusion 320 and the coupling holder 330 may have a variable position change when the opening and closing operation is repeated, an error may occur in the wafer processing apparatus 10. It plays a role of fixing the position so that it does not.
  • the flexible hose 280 is preferably made of a length or elasticity corresponding to the opening and closing operation of the case 300.
  • FIG 11 is an exploded perspective view of a base plate according to a preferred embodiment of the present invention
  • Figures 12 and 13 is an exemplary view illustrating that the perforated plate and the exhaust box is coupled to the base plate according to a preferred embodiment of the present invention
  • Figure 14 is a perspective view of an exhaust manifold according to a preferred embodiment of the present invention.
  • the exhaust unit 400 of the present invention is a perforated plate 480, the base plate 410, exhaust passage 420, exhaust box 430, exhaust box pipe 440, inlet pipe 460, exhaust manifold 450, and exhaust outlet 470.
  • the base plate 410 includes one or more exhaust passages 420, and a perforated plate 480 is installed on the exhaust passage 420, and an exhaust box 430 is disposed below the exhaust passage 420. It is installed, the exhaust box 430 has a lower exhaust box hole is formed and includes an exhaust box pipe 440 extending from the exhaust box hole.
  • the exhaust manifold 450 includes an inlet pipe 460 extending from the inlet hole in the upper portion, and an exhaust outlet 470 for discharging the inlet air to the outside.
  • the exhaust box pipe 440 and the inlet pipe 460 are connected to each other so that the exhaust box 430 and the exhaust manifold 450 are connected to each other.
  • the base plate 410 and the main frame of the wafer processing apparatus 10 the base plate 410 and the perforated plate 480, the base plate 410 and the exhaust box 430 are contact surfaces, respectively.
  • the sealing tape is sealed to prevent foreign substances such as process gas and fume from leaking to the equipment other than the exhaust unit 400 while the exhaust unit 400 is exhausting.
  • 15 is an exemplary view illustrating the exhaust flow of the wafer processing apparatus according to the preferred embodiment of the present invention.
  • the first exhaust box pipe of the first exhaust box installed in the lower portion of the first exhaust passage is connected to the first inlet pipe 461 of the first exhaust manifold 451, and the second exhaust passage (
  • the second exhaust box pipe 442 of the second exhaust box 432 installed in the lower portion of the 422 is connected to the fourth inlet pipe 464 of the second exhaust manifold 452, and the third exhaust passage 423.
  • the third exhaust box pipe 443 of the third exhaust box 433 is installed in the lower portion of the second exhaust manifold 452 is connected to the fifth inlet pipe 465, the lower portion of the fourth exhaust passage 424
  • the fourth exhaust box pipe 444 of the fourth exhaust box 434 installed in the first exhaust manifold 451 is connected to the second inlet pipe 462, the lower portion of the fifth exhaust passage 425 is installed
  • the fifth exhaust box pipe 445 of the fifth exhaust box 435 is connected to the third inlet pipe 463 of the first exhaust manifold 451, and the sixth exhaust pipe 426 is disposed below the sixth exhaust passage 426.
  • the sixth exhaust box pipe 446 of the exhaust box 436 is connected to the sixth inlet pipe 466 of the second exhaust manifold 452. It is preferred.
  • an exhaust outlet 470 is provided below the first exhaust manifold 451 and the second exhaust manifold 452 to discharge the air introduced from the one or more exhaust boxes 430 to the outside.
  • each exhaust outlet 470 is preferably connected to the exhaust line of the semiconductor factory to be discharged to the outside, due to the discharge through the exhaust line to block the leakage of foreign substances such as process gas and fume into the semiconductor factory. It is effective.
  • 16 is an exemplary view of an exhaust device of the wafer processing apparatus according to the preferred embodiment of the present invention.
  • FIG. 16 a structure in which a blower 500, a base plate 410, and an exhaust manifold 450 are installed in the wafer processing apparatus 10 and an exhaust outlet of the exhaust manifold 450 is provided. It can be seen that the 470 is exposed to the outside of the wafer processing apparatus 10 to be connected to the exhaust line of the semiconductor factory.
  • wafer storage 110 wafer loading lathe
  • inert gas injection unit 210 nozzle cover
  • inert gas injection unit 262 first supply pipe
  • hinge portion 320 coupling projection

Abstract

The present invention relates to an exhaust device of a wafer treating apparatus in which a wafer transfer robot for transferring a wafer is formed within a main body, the exhaust device comprising: a blowing unit located above the main body to generate wind downward; side storages provided on opposite sides of the main body to spray an inert gas toward the center of the wafer treating apparatus; and an exhaust unit, wherein the exhaust unit includes: a base plate including one or more exhaust passages, each having an exhaust box provided therebelow; a perforated plate provided above the exhaust passage; the exhaust box provided below the exhaust passage and connected with an exhaust manifold; and the exhaust manifold having an exhaust outlet connected with one or more exhaust boxes to exhaust air to the outside. As described above, the present invention can provide the exhaust device of the wafer treating apparatus in which the side storages provided on the opposite sides of the main body blow an inert gas toward the center of the wafer treating apparatus, the blowing unit above the main body generates wind toward the lower side of the wafer treating apparatus, and air is exhausted to the outside through the exhaust unit, which makes it possible to minimize contamination of a wafer.

Description

웨이퍼 처리장치의 배기장치Exhaust System of Wafer Processing System
본 발명은 웨이퍼 처리장치의 배기장치에 관한 것으로, 보다 상세하게는 본체의 양 측면에 설치된 사이드 스토리지에서 불활성가스를 웨이퍼 처리장치의 중앙 방향으로 블로잉하고, 상부의 송풍부에서 웨이퍼 처리장치의 하측 방향으로 바람을 발생하여 배기부를 통해 외부로 공기를 배기함으로써 웨이퍼의 오염을 최소화하는 웨이퍼 처리장치의 배기장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust device of a wafer processing apparatus, and more particularly, inert gas is blown toward the center of the wafer processing apparatus in side storage provided on both sides of the main body, and the lower side of the wafer processing apparatus at the upper blower. The present invention relates to an exhaust device of a wafer processing apparatus that minimizes contamination of a wafer by generating wind to exhaust air to the outside through an exhaust portion.
본 발명은 웨이퍼 처리장치에 관한 것이다.The present invention relates to a wafer processing apparatus.
통상적으로, 반도체 제조를 위한 설비에는 여러 종류의 챔버가 구비된다.Typically, equipment for semiconductor manufacturing is equipped with several chambers.
예를 들어, 웨이퍼에 일정 두께의 막을 형성하거나 이온 등을 주입하기 위한 공정 챔버(process chamber), 상기 공정 챔버의 주변에 설치되어 상기 공정 챔버 내부로 웨이퍼를 이송시키는 트랜스퍼 챔버(transfer chamber), 상기 트랜스퍼 챔버를 통하여 웨이퍼를 이송하기 전에 공정 챔버의 분위기로 예비 분위기 형성을 위한 로드락 챔버, 공정 후에 잔존하는 부산물을 제거하기 위하여 일정 온도하에서 일정 시간 동안 웨이퍼를 보관하는 사이드 스토리지(sides storage)등 여러 종류의 챔버가 반도체 제조설비에 포함된다.For example, a process chamber for forming a film having a predetermined thickness or implanting ions into the wafer, a transfer chamber installed around the process chamber to transfer the wafer into the process chamber, A load lock chamber for forming a preliminary atmosphere into the atmosphere of the process chamber before transferring the wafer through the transfer chamber, and side storage for storing the wafer for a predetermined time under a certain temperature to remove the by-products remaining after the process. Kinds of chambers are included in semiconductor manufacturing facilities.
상술한 챔버들은 통상적으로 서로 연동되도록 가깝게 설치되어 있으며, 웨이퍼는 로드락 챔버에서 트랜스퍼 챔버를 통하여 공정챔버에서 공정을 수행하고 사이드 스토리지로 순차적으로 이송되도록 구성되어 있다.The above-described chambers are typically installed in close proximity to each other, and the wafer is configured to perform a process in the process chamber through the transfer chamber in the load lock chamber and sequentially transfer to the side storage.
한편, 반도체 제조공정을 거치는 동안 Br/Cl 가스 등 다양한 부산물가스가 웨이퍼 주변에 생성되는데, 이와 같은 부산물가스는 웨이퍼나 챔버 등을 오염 및 부식시키게 되므로 상기 부산물가스를 제거하기 위한 공정이 필수적으로 요구된다.Meanwhile, various by-product gases such as Br / Cl gas are generated around the wafer during the semiconductor manufacturing process. Since such by-product gases contaminate and corrode wafers and chambers, a process for removing the by-product gases is essential. do.
이와 같이 웨이퍼 주변에 생성된 부산물가스를 제거하기 위하여 사용되는 것이 사이드 스토리지이다.Thus, side storage is used to remove the by-product gas generated around the wafer.
이때, 종래의 사이드 스토리지는 불활성가스가 사이드 스토리지의 전면(웨이퍼가 인입되는 사이드 스토리지의 개방된 면)에서 후면 방향으로 공급되어 FFU(Fan Filter Unit) 및 웨이퍼 처리장치 내에 부유하는 공정 가스 및 흄 등의 이물질이 사이드 스토리지 내로 유입되어 웨이퍼에 파티클을 발생시켜 불량률을 높이는 문제점이 있고, 웨이퍼 처리장치 내의 각종 부품들이 공정 가스 및 흄 등의 이물질에 의해 부식과 고장을 유발하는 문제점이 있다.In this case, in the conventional side storage, inert gas is supplied from the front side of the side storage (open side of the side storage into which the wafer is inserted) to the rear side, and the process gas and the fume floating in the FFU (Fan Filter Unit) and the wafer processing apparatus. Foreign matters are introduced into the side storage to generate particles on the wafer, thereby increasing the defect rate, and various components in the wafer processing apparatus may cause corrosion and failure due to foreign substances such as process gases and fumes.
상술한 바와 같은 문제점을 해결하기 위해 안출된 본 발명의 목적은, 본체의 양 측면에 설치된 사이드 스토리지에서 불활성가스를 웨이퍼 처리장치의 중앙방향으로 블로잉하여 사이드 스토리지 내 공정 가스 및 흄 등의 이물질을 제거하고, 본체 상부에 설치된 송풍부에서 웨이퍼 처리장치의 하측 방향으로 바람을 발생하여 배기부를 통해 외부로 공기를 배기하여 웨이퍼 처리장치 내의 각종 부품들을 부식과 고장을 예방하고, 배기부가 공장 내의 배기라인과 연결되어 외부로 배기함으로써 공장 내에 공정 가스 및 흄 등의 이물질이 새어 나오는 것을 방지하는 웨이퍼 처리장치의 배기장치를 제공하기 위함이다.An object of the present invention devised to solve the above problems is to blow inert gas toward the center of the wafer processing apparatus in side storage installed on both sides of the main body to remove foreign substances such as process gas and fume in the side storage. In addition, the blower installed in the upper part of the main body generates wind in the downward direction of the wafer processing apparatus to exhaust air to the outside through the exhaust portion to prevent corrosion and failure of various components in the wafer processing apparatus, In order to provide an exhaust device for a wafer processing device that is connected to the outside and prevents foreign substances such as process gases and fumes from leaking into the factory.
상기한 바와 같은 목적을 달성하기 위한 본 발명의 특징에 따르면, 본 발명은, 웨이퍼를 이송하는 웨이퍼 이송로봇이 본체 내부에 형성된 웨이퍼 처리장치에 있어서, 상기 본체의 상부에 위치하여 하측 방향으로 바람을 발생하는 송풍부; 본체의 양 측면에 설치되고, 불활성가스를 상기 웨이퍼 처리장치의 중앙 방향으로 분사하는 사이드 스토리지; 및 하측에 배기박스가 설치되는 하나 이상의 배기통로를 포함하는 베이스플레이트, 상기 배기통로의 상부에 설치되는 타공판, 상기 배기통로의 하부에 설치되고 배기매니폴드와 연결되는 배기박스, 및 하나 이상의 배기박스와 연결되어 외부로 공기를 배기하는 배기출구가 구비된 배기매니폴드를 포함하는 배기부;를 포함하는 것을 특징으로 한다.According to a feature of the present invention for achieving the above object, the present invention, in the wafer processing apparatus is formed inside the main body wafer transport robot for transporting the wafer, located in the upper portion of the main body to blow the wind downward Generating blower; Side storages provided at both sides of the main body and injecting an inert gas toward a center of the wafer processing apparatus; And a base plate including one or more exhaust passages having an exhaust box disposed below, a perforated plate installed at an upper portion of the exhaust passage, an exhaust box installed at the lower portion of the exhaust passage and connected to an exhaust manifold, and at least one exhaust box. And an exhaust unit including an exhaust manifold having an exhaust outlet connected to the outside to exhaust air to the outside.
또한, 상기 배기박스는, 하부의 배기박스홀과 상기 배기박스홀로부터 연장된 배기박스관을 포함하고, 상기 배기매니폴드는, 상부에 유입홀과 상기 유입홀로부터 연장된 유입관 및 하부에 배기홀을 포함하며, 상기 배기박스관과 상기 유입관이 연결되는 것을 특징으로 한다.In addition, the exhaust box includes a lower exhaust box hole and an exhaust box tube extending from the exhaust box hole, the exhaust manifold, the inlet hole and the inlet pipe extending from the inlet hole and the lower exhaust It comprises a hole, characterized in that the exhaust box pipe and the inlet pipe is connected.
또한, 상기 배기박스는, 상기 베이스플레이트와의 접촉면이 밀봉테이프로 밀폐되는 것을 특징으로 하고, 상기 타공판은, 상기 베이스플레이트와의 접촉면이 밀봉테이프로 밀폐되는 것을 특징으로 하고, 상기 베이스플레이트는, 메인프레임과의 접촉면이 밀봉테이프로 밀폐되는 것을 특징으로 한다.In addition, the exhaust box is characterized in that the contact surface with the base plate is sealed with a sealing tape, the perforated plate is characterized in that the contact surface with the base plate is sealed with a sealing tape, the base plate, The contact surface with the main frame is sealed with a sealing tape.
이상 살펴본 바와 같은 본 발명에 따르면, 본체의 양 측면에 설치된 사이드 스토리지에서 불활성가스를 웨이퍼 처리장치의 중앙방향으로 블로잉하여 사이드 스토리지 내 공정 가스 및 흄 등의 이물질을 제거하고, 본체 상부에 설치된 송풍부에서 웨이퍼 처리장치의 하측 방향으로 바람을 발생하여 배기부를 통해 외부로 공기를 배기하여 웨이퍼 처리장치 내의 각종 부품들을 부식과 고장을 예방하고, 배기부가 공장 내의 배기라인과 연결되어 외부로 배기함으로써 공장 내에 공정 가스 및 흄 등의 이물질이 새어 나오는 것을 방지하는 웨이퍼 처리장치의 배기장치를 제공할 수 있다.According to the present invention as described above, by blowing the inert gas toward the center of the wafer processing apparatus in the side storage installed on both sides of the main body to remove foreign substances such as process gas and fume in the side storage, and the blower installed on the upper part of the main body Air is generated in the downward direction of the wafer processing apparatus to exhaust air to the outside through the exhaust portion to prevent corrosion and failure of various components in the wafer processing apparatus, and the exhaust portion is connected to the exhaust line in the factory and exhausted to the outside. It is possible to provide an exhaust device of a wafer processing apparatus that prevents foreign substances such as process gases and fumes from leaking out.
도 1은 본 발명의 바람직한 실시예에 따른 웨이퍼 처리장치의 예시도.1 is an illustration of a wafer processing apparatus in accordance with a preferred embodiment of the present invention.
도 2는 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지의 측면도.2 is a side view of wafer storage in accordance with a preferred embodiment of the present invention.
도 3 및 도 4는 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지의 사시도.3 and 4 are perspective views of wafer storage according to a preferred embodiment of the present invention.
도 5는 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지와 불활성가스 분사부의 분해사시도.5 is an exploded perspective view of a wafer storage and an inert gas injection unit according to a preferred embodiment of the present invention.
도 6은 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지와 불활성가스 공급부의 분해사시도.6 is an exploded perspective view of a wafer storage and an inert gas supply unit according to a preferred embodiment of the present invention.
도 7은 본 발명의 바람직한 실시예에 따른 사이드 스토리지의 사시도.7 is a perspective view of a side storage according to a preferred embodiment of the present invention.
도 8은 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지와 케이스의 예시도.8 illustrates an example wafer storage and case in accordance with a preferred embodiment of the present invention.
도 9는 본 발명의 바람직한 실시예에 따른 케이스의 개폐를 예시한 예시도.9 is an exemplary view illustrating opening and closing of a case according to a preferred embodiment of the present invention.
도 10은 본 발명의 바람직한 실시예에 따른 케이스를 예시한 예시도.10 is an exemplary view illustrating a case according to a preferred embodiment of the present invention.
도 11은 본 발명의 바람직한 실시예에 따른 베이스플레이트의 분해사시도.11 is an exploded perspective view of a base plate according to a preferred embodiment of the present invention.
도 12 및 도 13은 본 발명의 바람직한 실시예에 따른 베이스플레이트에 타공판과 배기박스가 결합되는 것을 예시한 예시도.12 and 13 are exemplary views illustrating that the perforated plate and the exhaust box are coupled to the base plate according to the preferred embodiment of the present invention.
도 14는 본 발명의 바람직한 실시예에 따른 배기매니폴드의 사시도.14 is a perspective view of an exhaust manifold according to a preferred embodiment of the present invention.
도 15는 본 발명의 바람직한 실시예에 따른 웨이퍼 처리장치의 배기 흐름을 예시한 예시도.15 is an exemplary view illustrating the exhaust flow of the wafer processing apparatus according to the preferred embodiment of the present invention.
도 16은 본 발명의 바람직한 실시예에 따른 웨이퍼 처리장치의 배기장치의 예시도이다.16 is an exemplary view of an exhaust device of the wafer processing apparatus according to the preferred embodiment of the present invention.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다.Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings.
그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성 요소를 지칭한다.However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.
이하, 본 발명의 실시예들에 의하여 웨이퍼 처리장치의 배기장치를 설명하기 위한 도면들을 참고하여 본 발명에 대해 설명하도록 한다.Hereinafter, the present invention will be described with reference to the drawings for describing an exhaust device of a wafer processing apparatus according to embodiments of the present invention.
도 1은 본 발명의 바람직한 실시예에 따른 웨이퍼 처리장치의 예시도이다.1 is an exemplary view of a wafer processing apparatus according to a preferred embodiment of the present invention.
도 1을 참조하면, 본 발명인 웨이퍼 처리장치의 배기장치는 웨이퍼 스토리지(100)의 후면에 형성된 불활성가스 분사부(200)에서 웨이퍼 스토리지(100)의 전면으로 불활성가스를 블로잉하여 웨이퍼 스토리지(100) 내부 및 웨이퍼(112) 표면의 공정가스 및 흄 등과 같은 이물질을 제거하고, 상측에 위치한 송풍부(500)에서 하측 방향으로 바람을 발생시켜 웨이퍼 스토리지(100)에서 블로잉된 불활성가스 및 웨이퍼 처리장치(10) 내의 공정가스 및 흄 등의 이물질을 하측의 배기부(400)를 통해 외부로 배출하고, 배기부(400)를 통해 외부로 공기를 배기함으로써 웨이퍼 처리장치(10) 내의 각종 부품들을 부식과 고장으로부터 예방하는 웨이퍼 처리장치(10)에 관한 것이다.Referring to FIG. 1, the exhaust device of the wafer processing apparatus of the present invention blows inert gas from the inert gas injection unit 200 formed on the rear surface of the wafer storage 100 to the front surface of the wafer storage 100, and thus, the wafer storage 100. Inert gas and wafer processing apparatus blown from the wafer storage 100 by removing foreign substances such as process gas and fume on the inside and the surface of the wafer 112, and generating wind in the downward direction from the blower 500 located above. 10) foreign substances such as process gas and fume in the outside are discharged to the outside through the lower exhaust unit 400, and air is exhausted to the outside through the exhaust unit 400 to corrode various components in the wafer processing apparatus 10. The wafer processing apparatus 10 which prevents from a fault is provided.
도 2는 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지의 측면도이고, 도 3 및 도 4는 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지의 사시도이며, 도 5는 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지와 불활성가스 분사부의 분해사시도이다.2 is a side view of wafer storage according to a preferred embodiment of the present invention, FIGS. 3 and 4 are perspective views of wafer storage according to a preferred embodiment of the present invention, and FIG. 5 is a wafer storage according to a preferred embodiment of the present invention. And an exploded perspective view of an inert gas injection unit.
도 2 내지 도 5를 참조하면, 웨이퍼 처리장치(10)의 사이드 스토리지(20)는 웨이퍼 스토리지(100)와 불활성가스 분사부(200)를 포함한다.2 to 5, the side storage 20 of the wafer processing apparatus 10 includes a wafer storage 100 and an inert gas injection unit 200.
웨이퍼 스토리지(100)는 일정한 간격으로 이격되어 웨이퍼(112)를 적재할 수 있는 웨이퍼 적재선반(110)이 형성되어 있고, 복수개의 웨이퍼(112)가 상기 웨이퍼 적재선반(110)에 인입될 수 있도록 전면이 개방되어 있다.The wafer storage 100 is formed with a wafer stacking shelf 110 that can be spaced at regular intervals to load the wafer 112, and a plurality of wafers 112 can be inserted into the wafer stacking shelf 110. The front is open.
이때, 웨이퍼 적재선반(110)은 웨이퍼(112)의 끝단이 삽입될 수 있도록 상기 웨이퍼 스토리지(100)의 내부 양측에 복수개의 슬롯이 일정 간격으로 돌출 형성된다.At this time, the wafer loading shelf 110 is formed with a plurality of slots protruded at regular intervals on both sides of the inside of the wafer storage 100 so that the end of the wafer 112 can be inserted.
또한, 후면에는 불활성가스가 분사되는 불활성가스 분사부(200)가 형성되어 있고, 상부에 투명 재질로 형성된 윈도우창(120)이 형성되어 있다.In addition, an inert gas injection unit 200 through which an inert gas is injected is formed on the rear surface, and a window window 120 formed of a transparent material is formed on the top.
상기 윈도우창(120)은 상기 웨이퍼 처리장치(10)를 구동하는 사용자가 상기 웨이퍼 스토리지(100)의 내부 상태를 육안으로 확인할 수 있도록 한다.The window 120 allows a user who drives the wafer processing apparatus 10 to visually check the internal state of the wafer storage 100.
불활성가스 분사부(200)는 노즐커버(210), 노즐플레이트(250) 및 플로우가이드(240)를 포함한다.The inert gas injection unit 200 includes a nozzle cover 210, a nozzle plate 250, and a flow guide 240.
노즐커버(210)는 상기 웨이퍼 스토리지(100) 전면으로 불활성가스를 공급하는 불활성가스 공급관(230)이 연결되도록 하나 이상의 공급포트(220)가 형성되어 있고, 본 발명의 실시예에서는 제1공급포트(222), 제2공급포트(224), 제3공급포트(226) 및 제4공급포트(228)가 형성되어 있는 것을 예시하고 있다.The nozzle cover 210 is formed with one or more supply ports 220 to be connected to the inert gas supply pipe 230 for supplying the inert gas to the front surface of the wafer storage 100, in the embodiment of the present invention the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228 are illustrated.
노즐플레이트(250)는 다수의 분사공이 형성되어 있다.The nozzle plate 250 is formed with a plurality of injection holes.
이때, 상기 웨이퍼 스토리지(100)에 적재되어 있는 웨이퍼(112) 표면의 공정 가스 및 흄 등의 이물질을 제거하기 위해 상기 분사공은 적재되는 복수개의 웨이퍼(112) 각 사이에 위치하여 상기 웨이퍼 적재선반(110)의 간격에 대응되도록 형성되며 도 5와 같이 노즐플레이트 전체면에 위에서 언급한 상기 웨이퍼 적재선반(110)의 간격에 대응되면서 일정한 간격으로 분사공이 형성되는 것이 바람직하다.In this case, in order to remove foreign substances such as process gas and fume on the surface of the wafer 112 loaded on the wafer storage 100, the injection hole is positioned between each of the plurality of wafers 112 to be loaded, and the wafer loading shelf It is preferably formed to correspond to the interval of 110 and the injection hole is formed at a predetermined interval corresponding to the interval of the wafer loading shelf 110 mentioned above on the entire nozzle plate as shown in FIG.
플로우가이드(240)는 상기 노즐커버(210)와 상기 노즐플레이트(250)의 사이에 위치하여 이격된 사이를 밀폐시키고, 상기 공급포트(220)마다 일정 공간을 구획하는 격벽을 형성하며 본 발명의 바람직한 실시예에서는 네 개의 공급포트(220) 각각의 일정 공간을 구획하여 제1공급포트(222)에 해당하는 제1분사구역(242), 제2공급포트(224)에 해당하는 제2분사구역(244), 제3공급포트(226)에 해당하는 제3분사구역(246) 및 제4공급포트(228)에 해당하는 제4분사구역(248)으로 구획하고 있다. Flow guide 240 is located between the nozzle cover 210 and the nozzle plate 250 to seal the spaced apart, and forms a partition for partitioning a predetermined space for each of the supply port 220 and In a preferred embodiment, the first injection zone 242 corresponding to the first supply port 222 and the second injection zone corresponding to the second supply port 224 are divided by partitioning a predetermined space of each of the four supply ports 220. 244, a third injection zone 246 corresponding to the third supply port 226, and a fourth injection zone 248 corresponding to the fourth supply port 228.
이때, 상기 공급포트(220)가 네 개의 공급포트(220)로 형성되어 있기 때문에, 상기 불활성가스 공급관(230)의 일측이 제1공급관(262)과 하나의 관으로 연결되되 상기 불활성가스 공급관(230)의 타측은 네 개의 방향으로 나누어져 제1공급포트(222), 제2공급포트(224), 제3공급포트(226) 및 제4공급포트(228)와 각각 연결되는 것이 바람직하다.At this time, since the supply port 220 is formed of four supply ports 220, one side of the inert gas supply pipe 230 is connected to the first supply pipe 262 and one pipe, but the inert gas supply pipe ( The other side of 230 is preferably divided into four directions and connected to the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228, respectively.
상기 제1공급포트(222), 제2공급포트(224), 제3공급포트(226) 및 제4공급포트(228)에 불활성가스 공급관(230)이 연결되어 불활성가스가 공급되면, 제1분사구역(242), 제2분사구역(244), 제3분사구역(246) 및 제4분사구역(248) 각각의 구역에서 불활성가스가 퍼지게 되고, 상기 불활성가스 공급관(230)의 블로잉에 의하여 상기 노즐플레이트(250)의 다수의 분사공으로 불활성가스가 분사된다.When an inert gas supply pipe 230 is connected to the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228, the inert gas is supplied. Inert gas is diffused in each of the injection zone 242, the second injection zone 244, the third injection zone 246 and the fourth injection zone 248, and blown by the inert gas supply pipe 230. Inert gas is injected into the plurality of injection holes of the nozzle plate 250.
이때 상기 플로우가이드(240)의 두께는 불활성가스가 상기 각각의 공급포트(220)로부터 공급되고 상기 플로우가이드(240)에 형성된 각각의 구역 내에서 충분하게 해당구역 전체에 퍼질 수 있을 정도의 두께로 하는 것이 바람직하고, 4개의 공급포트(220)를 구비하고 4개의 분사구역으로 구획한 것은 하나 이상으로 구획하면, 불활성가스가 구역 내에서 퍼져 다수의 분사공으로 균등하게 분사되는데 효율적이기 때문이다.At this time, the thickness of the flow guide 240 is such that the inert gas is supplied from the respective supply port 220 and the thickness enough to spread in the entire area within each zone formed in the flow guide 240 It is preferable to have four supply ports 220 and partition them into four injection zones, because if one or more compartments are used, the inert gas is spread out in the zone and is efficiently injected evenly into the plurality of injection holes.
이때, 상기 노즐플레이트(250)에 형성된 다수의 분사공들은 적재되어 있는 웨이퍼(112)들의 이웃하는 두 웨이퍼(112) 사이의 공간으로 불활성가스가 분사되도록 상호 일정간격 이격되어 상기 노즐플레이트(250) 전체에 고르게 형성되어 있기 때문에 상기 웨이퍼 스토리지(100)에 적재되어 있는 모든 웨이퍼(112)들의 표면 및 웨이퍼 스토리지(100) 내의 공정 가스 및 흄 등의 이물질을 전체적으로 제거할 수 있는 효과가 있다.In this case, the plurality of injection holes formed in the nozzle plate 250 are spaced apart from each other by a predetermined interval so that the inert gas is injected into the space between two adjacent wafers 112 of the wafers 112 that are loaded. Since it is evenly formed on the whole, the surface of all the wafers 112 stacked on the wafer storage 100 and foreign matters such as process gas and fume in the wafer storage 100 can be removed as a whole.
또한, 불활성가스는 웨이퍼 스토리지(100) 내의 이물질을 제거한 후 상기 웨이퍼 스토리지(100)의 전면으로 빠져나가 웨이퍼 처리장치(10)의 중앙 방향으로 배출된 후 웨이퍼 처리장치(10)의 상측에 위치하여 하측 방향으로 바람을 발생하는 송풍부(500)에 의해 아래로 이동하여 웨이퍼 처리장치(10)의 배기부(400)에 의해 외부로 배기되는 과정을 거치게 된다.In addition, after removing the foreign matter in the wafer storage 100, the inert gas exits the front surface of the wafer storage 100 and is discharged toward the center of the wafer processing apparatus 10, and is located above the wafer processing apparatus 10. The air is moved downward by the blower 500 generating the wind in the downward direction, and is exhausted to the outside by the exhaust unit 400 of the wafer processing apparatus 10.
도 6은 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지와 불활성가스 공급부의 분해사시도이고, 도 7은 본 발명의 바람직한 실시예에 따른 사이드 스토리지의 사시도이다.6 is an exploded perspective view of a wafer storage and an inert gas supply unit according to a preferred embodiment of the present invention, and FIG. 7 is a perspective view of a side storage according to a preferred embodiment of the present invention.
도 6 및 도 7을 참조하면, 상기 웨이퍼 스토리지(100)은 하부에 불활성가스 공급부(260)을 더 포함한다.6 and 7, the wafer storage 100 further includes an inert gas supply unit 260 below.
상기 불활성가스 공급부(260)은 상부에 제1공급관(262) 및 하부에 제2공급관(264)이 형성되어 있고, 상기 제1공급관(262)과 상기 제2공급관(264)은 상기 불활성가스 공급부(260) 내부에서 서로 연결되어 있으며, 상기 제1공급관(262)은 상기 불활성가스 공급관(230)과 연결되고, 플랙시블 호스(280)를 더 포함하여 상기 플랙시블 호스(280)는 상기 제2공급관(264)과 상기 웨이퍼 처리장치(10)의 불활성가스를 공급하는 메인공급관(270)을 연결한다.The inert gas supply unit 260 has a first supply pipe 262 and a second supply pipe 264 at the bottom, the first supply pipe 262 and the second supply pipe 264 is the inert gas supply 260 is connected to each other, the first supply pipe 262 is connected to the inert gas supply pipe 230, and further includes a flexible hose 280, the flexible hose 280 is the second The supply pipe 264 and the main supply pipe 270 for supplying the inert gas of the wafer processing apparatus 10 are connected.
상기 플랙시블 호스(280)의 상세한 설명은 추후에 하도록 한다.Detailed description of the flexible hose 280 will be described later.
이때, 상기 불활성가스 공급부(260)는 상기 웨이퍼 스토리지(100)로 공급되는 불활성가스의 공급량, 공급 압력 등을 제어할 수 있다.In this case, the inert gas supply unit 260 may control the supply amount, supply pressure, and the like of the inert gas supplied to the wafer storage 100.
보다 상세하게는, 상기 불활성가스 공급부(260)의 내부에는 상기 제2공급관(264)으로부터 공급되는 불활성가스의 공급량 및 공급 압력을 조절가능하도록 밸브, 액츄에이터, 게이지 등을 포함하는 조절수단이 더 구비될 수 있으며, 상기 조절수단들은 일반적인 조절수단을 쉽게 적용 가능 하므로 더 이상의 설명은 생략한다.More specifically, the inside of the inert gas supply unit 260 is further provided with a control means including a valve, actuator, gauge, etc. to adjust the supply amount and supply pressure of the inert gas supplied from the second supply pipe 264 The adjustment means may be easily applied to the general control means, so further description thereof will be omitted.
도 8은 본 발명의 바람직한 실시예에 따른 웨이퍼 스토리지와 케이스의 예시도이고, 도 9는 본 발명의 바람직한 실시예에 따른 케이스의 개폐를 예시한 예시도이며, 도 10은 본 발명의 바람직한 실시예에 따른 케이스를 예시한 예시도이다.8 is an exemplary view showing a wafer storage and a case according to a preferred embodiment of the present invention, Figure 9 is an exemplary view illustrating opening and closing of the case according to a preferred embodiment of the present invention, Figure 10 is a preferred embodiment of the present invention An exemplary diagram illustrating a case according to the present invention.
도 8 내지 도 10을 참조하면, 사이드 스토리지(20)는 상기 웨이퍼 스토리지(100)가 설치되는 케이스(300)를 포함하고, 상기 케이스(300)의 전면부 일측에 형성되며 상기 웨이퍼 스토리지(100)의 전면부가 상기 웨이퍼 처리장치(10)로부터 개폐되도록 상기 웨이퍼 처리장치(10)와 힌지결합되는 힌지부(310)와 상기 케이스(300)의 전면부 타측에 형성되고 상기 웨이퍼 처리장치(10)에 형성된 결합돌기와 착탈되는 결합홀더(330)를 더 포함한다.8 to 10, the side storage 20 includes a case 300 in which the wafer storage 100 is installed, and is formed on one side of a front portion of the case 300 and the wafer storage 100. A hinge portion 310 hinged to the wafer processing apparatus 10 and a front side of the case 300 to be opened and closed from the wafer processing apparatus 10 so as to be opened and closed from the wafer processing apparatus 10. It further includes a coupling holder 330 detachable from the coupling protrusion formed.
본 발명의 실시예에 따르면, 힌지부(310)는 세 개의 힌지를 포함하여 안전하게 개폐되는 것이 바람직하고, 상기 웨이퍼 처리장치(10)에 형성된 결합돌기(320)와 상기 케이스(300)에 형성된 결합홀더(330)가 서로 결합하여 개폐된다.According to the exemplary embodiment of the present invention, the hinge part 310 may be securely opened and closed including three hinges, and the coupling protrusion 320 formed on the wafer processing apparatus 10 and the coupling formed on the case 300. The holders 330 are coupled to each other to open and close.
이때, 결합돌기(320)와 결합홀더(330)는 개폐 동작을 반복할 경우 위치변동의 변수가 생겨 상기 웨이퍼 처리장치(10)에서 오류가 발생할 수 있기 때문에, 개폐를 반복적으로 수행하더라도 위치 변동이 없도록 위치를 고정시켜주는 역할을 수행한다.In this case, since the coupling protrusion 320 and the coupling holder 330 may have a variable position change when the opening and closing operation is repeated, an error may occur in the wafer processing apparatus 10. It plays a role of fixing the position so that it does not.
또한, 위에서 언급한 바와 같이 상기 제2공급관(264)과 상기 메인공급관(270)은 상기 플랙시블 호스(280)로 연결되어 있기 때문에 개폐 동작을 수행할 때마다 상기 제2공급관(264)과 상기 메인공급관(270)의 연결을 해제할 필요가 없도록 하였다.In addition, as mentioned above, since the second supply pipe 264 and the main supply pipe 270 are connected to the flexible hose 280, each time the opening and closing operation is performed, the second supply pipe 264 and the It was not necessary to disconnect the main supply pipe (270).
이때, 상기 플랙시블 호스(280)는 상기 케이스(300)의 개폐동작에 대응하는 길이로 제작되거나 신축성을 가지고 있는 것이 바람직하다.At this time, the flexible hose 280 is preferably made of a length or elasticity corresponding to the opening and closing operation of the case 300.
이러한 도어 형태의 개폐가 가능하게 함으로써, 꾸준하게 관리되어야 하는 웨이퍼 스토리지(100)의 내부 유지보수의 편의성을 제공하는 것을 특징으로 한다.By enabling the opening and closing of the door, it is characterized in that it provides convenience of internal maintenance of the wafer storage 100 to be managed steadily.
도 11은 본 발명의 바람직한 실시예에 따른 베이스플레이트의 분해사시도이고, 도 12 및 도 13은 본 발명의 바람직한 실시예에 따른 베이스플레이트에 타공판과 배기박스가 결합되는 것을 예시한 예시도이며, 도 14는 본 발명의 바람직한 실시예에 따른 배기매니폴드의 사시도이다.11 is an exploded perspective view of a base plate according to a preferred embodiment of the present invention, Figures 12 and 13 is an exemplary view illustrating that the perforated plate and the exhaust box is coupled to the base plate according to a preferred embodiment of the present invention, Figure 14 is a perspective view of an exhaust manifold according to a preferred embodiment of the present invention.
도 11 내지 도 14를 참조하면, 본 발명의 배기부(400)는 타공판(480), 베이스플레이트(410), 배기통로(420), 배기박스(430), 배기박스관(440), 유입관(460), 배기매니폴드(450), 배기출구(470)를 포함한다.11 to 14, the exhaust unit 400 of the present invention is a perforated plate 480, the base plate 410, exhaust passage 420, exhaust box 430, exhaust box pipe 440, inlet pipe 460, exhaust manifold 450, and exhaust outlet 470.
상기 베이스플레이트(410)는 하나 이상의 배기통로(420)를 포함하고, 상기 배기통로(420)의 상부에 타공판(480)이 설치되며, 상기 배기통로(420)의 하부에는 배기박스(430)가 설치되고, 상기 배기박스(430)의 하부에는 배기박스홀이 형성되어 상기 배기박스홀로부터 연장된 배기박스관(440)을 포함한다.The base plate 410 includes one or more exhaust passages 420, and a perforated plate 480 is installed on the exhaust passage 420, and an exhaust box 430 is disposed below the exhaust passage 420. It is installed, the exhaust box 430 has a lower exhaust box hole is formed and includes an exhaust box pipe 440 extending from the exhaust box hole.
또한, 상기 배기매니폴드(450)는 상부에 유입홀로부터 연장된 유입관(460)을 포함하고, 하부에는 유입된 공기를 외부로 배출하는 배기출구(470)를 포함한다.In addition, the exhaust manifold 450 includes an inlet pipe 460 extending from the inlet hole in the upper portion, and an exhaust outlet 470 for discharging the inlet air to the outside.
상기 배기박스관(440)과 상기 유입관(460)이 서로 연결되어 상기 배기박스(430)와 상기 배기매니폴드(450)가 연결되는 것이 바람직하다.It is preferable that the exhaust box pipe 440 and the inlet pipe 460 are connected to each other so that the exhaust box 430 and the exhaust manifold 450 are connected to each other.
이때, 상기 베이스플레이트(410)와 상기 웨이퍼 처리장치(10)의 메인프레임, 상기 베이스플레이트(410)와 상기 타공판(480), 상기 베이스플레이트(410)와 상기 배기박스(430)는 각각의 접촉면이 밀봉테이프로 밀폐되며 이는 상기 배기부(400)가 배기를 진행함에 있어서 공정 가스 및 흄 등의 이물질이 상기 배기부(400) 이외의 장비로 누출되는 것을 막기 위함이다.In this case, the base plate 410 and the main frame of the wafer processing apparatus 10, the base plate 410 and the perforated plate 480, the base plate 410 and the exhaust box 430 are contact surfaces, respectively. The sealing tape is sealed to prevent foreign substances such as process gas and fume from leaking to the equipment other than the exhaust unit 400 while the exhaust unit 400 is exhausting.
도 15는 본 발명의 바람직한 실시예에 따른 웨이퍼 처리장치의 배기 흐름을 예시한 예시도이다.15 is an exemplary view illustrating the exhaust flow of the wafer processing apparatus according to the preferred embodiment of the present invention.
도 15를 참조하면, 제1배기통로의 하부에 설치된 제1배기박스의 제1배기박스관이 제1배기매니폴드(451)의 제1유입관(461)과 연결되며, 제2배기통로(422)의 하부에 설치된 제2배기박스(432)의 제2배기박스관(442)이 제2배기매니폴드(452)의 제4유입관(464)과 연결되고, 제3배기통로(423)의 하부에 설치된 제3배기박스(433)의 제3배기박스관(443)이 제2배기매니폴드(452)의 제5유입관(465)과 연결되며, 제4배기통로(424)의 하부에 설치된 제4배기박스(434)의 제4배기박스관(444)이 제1배기매니폴드(451)의 제2유입관(462)과 연결되고, 제5배기통로(425)의 하부에 설치된 제5배기박스(435)의 제5배기박스관(445)이 제1배기매니폴드(451)의 제3유입관(463)과 연결되며, 제6배기통로(426)의 하부에 설치된 제6배기박스(436)의 제6배기박스관(446)이 제2배기매니폴드(452)의 제6유입관(466)과 연결되는 것이 바람직하다.Referring to FIG. 15, the first exhaust box pipe of the first exhaust box installed in the lower portion of the first exhaust passage is connected to the first inlet pipe 461 of the first exhaust manifold 451, and the second exhaust passage ( The second exhaust box pipe 442 of the second exhaust box 432 installed in the lower portion of the 422 is connected to the fourth inlet pipe 464 of the second exhaust manifold 452, and the third exhaust passage 423. The third exhaust box pipe 443 of the third exhaust box 433 is installed in the lower portion of the second exhaust manifold 452 is connected to the fifth inlet pipe 465, the lower portion of the fourth exhaust passage 424 The fourth exhaust box pipe 444 of the fourth exhaust box 434 installed in the first exhaust manifold 451 is connected to the second inlet pipe 462, the lower portion of the fifth exhaust passage 425 is installed The fifth exhaust box pipe 445 of the fifth exhaust box 435 is connected to the third inlet pipe 463 of the first exhaust manifold 451, and the sixth exhaust pipe 426 is disposed below the sixth exhaust passage 426. The sixth exhaust box pipe 446 of the exhaust box 436 is connected to the sixth inlet pipe 466 of the second exhaust manifold 452. It is preferred.
또한, 상기 제1배기매니폴드(451) 및 제2배기매니폴드(452)의 하측에 배기출구(470)가 구비되어 상기 하나 이상의 배기박스(430)들로부터 유입된 공기를 외부로 배출한다.In addition, an exhaust outlet 470 is provided below the first exhaust manifold 451 and the second exhaust manifold 452 to discharge the air introduced from the one or more exhaust boxes 430 to the outside.
이때, 각각의 배기출구(470)는 반도체 공장의 배기라인과 연결되어 외부로 배출되는 것이 바람직하고, 이러한 배기라인을 통한 배출로 인하여 반도체 공장 내부로 공정가스 및 흄 등의 이물질이 새어 나오는 것을 차단하는 효과가 있다.At this time, each exhaust outlet 470 is preferably connected to the exhaust line of the semiconductor factory to be discharged to the outside, due to the discharge through the exhaust line to block the leakage of foreign substances such as process gas and fume into the semiconductor factory. It is effective.
도 16은 본 발명의 바람직한 실시예에 따른 웨이퍼 처리장치의 배기장치의 예시도이다.16 is an exemplary view of an exhaust device of the wafer processing apparatus according to the preferred embodiment of the present invention.
도 16을 참조하면, 상기 웨이퍼 처리장치(10)의 내부에 송풍부(500), 베이스플레이트(410), 배기매니폴드(450)가 설치되어 있는 구조 및 배기매니폴드(450)의 배기출구(470)가 반도체 공장의 배기라인과 연결될 수 있도록 상기 웨이퍼 처리장치(10)의 외부로 노출되어 있는 것을 파악할 수 있다.Referring to FIG. 16, a structure in which a blower 500, a base plate 410, and an exhaust manifold 450 are installed in the wafer processing apparatus 10 and an exhaust outlet of the exhaust manifold 450 is provided. It can be seen that the 470 is exposed to the outside of the wafer processing apparatus 10 to be connected to the exhaust line of the semiconductor factory.
본 발명이 속하는 기술분야의 통상의 지식을 가진 자는 본 발명이 그 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구의 범위에 의하여 나타내어지며, 특허청구의 범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.Those skilled in the art will appreciate that the present invention can be embodied in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is indicated by the scope of the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and the equivalent concept are included in the scope of the present invention. Should be interpreted.
*부호의 설명* Description of the sign
10: 웨이퍼 처리장치 20: 사이드 스토리지10: wafer processing apparatus 20: side storage
100: 웨이퍼 스토리지 110: 웨이퍼 적재선반100: wafer storage 110: wafer loading lathe
112: 웨이퍼 120: 윈도우창112: wafer 120: window
200: 불활성가스 분사부 210: 노즐커버200: inert gas injection unit 210: nozzle cover
220: 공급포트 230: 불활성가스 공급관220: supply port 230: inert gas supply pipe
240: 플로우가이드 242: 제1분사구역240: flow guide 242: first injection zone
244: 제2분사구역 246: 제3분사구역244: second injection zone 246: third injection zone
248: 제4분사구역 250: 노즐플레이트248: fourth injection zone 250: nozzle plate
260: 불활성가스 분사부 262: 제1공급관260: inert gas injection unit 262: first supply pipe
264: 제2공급관 270: 메인공급관264: second supply pipe 270: main supply pipe
280: 플랙시블 호스 300: 케이스280: flexible hose 300: case
310: 힌지부 320: 결합돌기310: hinge portion 320: coupling projection
330: 결합홀더 400: 배기부330: coupling holder 400: exhaust
410: 베이스플레이트 420: 배기통로410: base plate 420: exhaust passage
430: 배기박스 440: 배기박스관430: exhaust box 440: exhaust box pipe
450: 배기매니폴드 460: 유입관450: exhaust manifold 460: inlet pipe
470: 배기출구 480: 타공판470: exhaust outlet 480: perforated plate
500: 송풍부500: blower

Claims (3)

  1. 웨이퍼를 이송하는 웨이퍼 이송로봇이 본체 내부에 형성된 웨이퍼 처리장치에 있어서,In the wafer processing apparatus formed inside the main body is a wafer transfer robot for transferring a wafer,
    상기 본체의 상부에 위치하여 하측 방향으로 바람을 발생하는 송풍부;Located in the upper portion of the main blower for generating wind in the downward direction;
    본체의 양 측면에 설치되고, 불활성가스를 상기 웨이퍼 처리장치의 중앙 방향으로 분사하는 사이드 스토리지; 및Side storages provided at both sides of the main body and injecting an inert gas toward a center of the wafer processing apparatus; And
    하측에 배기박스가 설치되는 하나 이상의 배기통로를 포함하는 베이스플레이트, 상기 배기통로의 상부에 설치되는 타공판, 상기 배기통로의 하부에 설치되고 배기매니폴드와 연결되는 배기박스, 및 하나 이상의 배기박스와 연결되어 외부로 공기를 배기하는 배기출구가 구비된 배기매니폴드를 포함하는 배기부;A base plate including one or more exhaust passages having an exhaust box disposed at a lower side thereof, a perforated plate installed at an upper portion of the exhaust passage, an exhaust box installed at a lower portion of the exhaust passage and connected to an exhaust manifold, and at least one exhaust box; An exhaust unit including an exhaust manifold connected to an exhaust outlet for exhausting air to the outside;
    를 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기장치.Exhaust device of a wafer processing apparatus comprising a.
  2. 제1항에 있어서, 상기 배기박스는,According to claim 1, The exhaust box,
    하부의 배기박스홀과 상기 배기박스홀로부터 연장된 배기박스관을 포함하고,A lower exhaust box hole and an exhaust box tube extending from the exhaust box hole,
    상기 배기매니폴드는,The exhaust manifold,
    상부에 유입홀과 상기 유입홀로부터 연장된 유입관 및 하부에 배기홀을 포함하며, 상기 배기박스관과 상기 유입관이 연결되는 것을 특징으로 하는 웨이퍼 처리장치의 배기장치.And an inlet tube extending from the inlet hole, an inlet tube extending from the inlet hole, and an exhaust hole in the lower portion, wherein the exhaust box tube and the inlet tube are connected to each other.
  3. 제1항에 있어서, 상기 배기박스는,According to claim 1, The exhaust box,
    상기 베이스플레이트와의 접촉면이 밀봉테이프로 밀폐되는 것을 특징으로 하고,Characterized in that the contact surface with the base plate is sealed with a sealing tape,
    상기 타공판은,The perforated plate,
    상기 베이스플레이트와의 접촉면이 밀봉테이프로 밀폐되는 것을 특징으로 하고,Characterized in that the contact surface with the base plate is sealed with a sealing tape,
    상기 베이스플레이트는,The base plate,
    메인프레임과의 접촉면이 밀봉테이프로 밀폐되는 것을 특징으로 하는 웨이퍼 처리장치의 배기장치.An exhaust device of a wafer processing apparatus, characterized in that the contact surface with the main frame is sealed with a sealing tape.
PCT/KR2016/009823 2015-09-25 2016-09-02 Exhaust device of wafer treating apparatus WO2017052100A1 (en)

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