KR101758214B1 - Exhaust device of wafer processing apparatus - Google Patents

Exhaust device of wafer processing apparatus Download PDF

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Publication number
KR101758214B1
KR101758214B1 KR1020150136690A KR20150136690A KR101758214B1 KR 101758214 B1 KR101758214 B1 KR 101758214B1 KR 1020150136690 A KR1020150136690 A KR 1020150136690A KR 20150136690 A KR20150136690 A KR 20150136690A KR 101758214 B1 KR101758214 B1 KR 101758214B1
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South Korea
Prior art keywords
exhaust
processing apparatus
wafer processing
wafer
inert gas
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KR1020150136690A
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Korean (ko)
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KR20170037294A (en
Inventor
박세운
박우진
Original Assignee
주식회사 싸이맥스
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Priority to KR1020150136690A priority Critical patent/KR101758214B1/en
Priority to PCT/KR2016/009823 priority patent/WO2017052100A1/en
Priority to CN201690001168.7U priority patent/CN207966923U/en
Publication of KR20170037294A publication Critical patent/KR20170037294A/en
Application granted granted Critical
Publication of KR101758214B1 publication Critical patent/KR101758214B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Robotics (AREA)

Abstract

The present invention relates to a wafer processing apparatus having a wafer transfer robot for transferring wafers in a main body of an exhaust apparatus of a wafer processing apparatus, the wafer processing apparatus comprising: a blowing unit located at an upper portion of the main body and generating wind in a downward direction; A side storage installed on both side surfaces of the main body for spraying the inert gas in the center direction of the wafer processing apparatus; A base plate including at least one exhaust passage provided with an exhaust box on the lower side, a perforated plate provided on the exhaust passage, an exhaust box provided below the exhaust passage and connected to the exhaust manifold, And an exhaust manifold connected to the exhaust port and having an exhaust outlet for exhausting air to the outside. According to the present invention, the inert gas is blown in the center direction of the wafer processing apparatus in the side storage provided on both side surfaces of the main body, and wind is generated in the downward direction of the wafer processing apparatus in the upper blowing unit, It is possible to provide an exhaust apparatus for a wafer processing apparatus that minimizes contamination of wafers by exhausting.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an exhaust device for a wafer processing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust apparatus for a wafer processing apparatus, more particularly, to an apparatus and a method for blowing an inert gas in a side direction of a wafer processing apparatus, To an exhaust device of a wafer processing apparatus that minimizes contamination of the wafer by exhausting air to the outside through the exhaust section.

The present invention relates to a wafer processing apparatus.

Generally, various kinds of chambers are provided in facilities for semiconductor manufacturing.

For example, a process chamber for forming a film of a predetermined thickness on a wafer or injecting ions, a transfer chamber for transferring a wafer to the process chamber, which is installed around the process chamber, A load lock chamber for forming a preliminary atmosphere in the atmosphere of the process chamber before transferring the wafer through the transfer chamber, and side storage for storing the wafer for a predetermined time at a certain temperature to remove the by- Type chambers are included in the semiconductor manufacturing facility.

The above-described chambers are typically closely spaced to each other and the wafer is configured to carry out the process in the process chamber through the transfer chamber in the load lock chamber and sequentially transfer to the side storage.

Meanwhile, during the semiconductor manufacturing process, various by-product gases such as Br / Cl gas are generated around the wafer. Such by-product gases pollute and corrode wafers and chambers, so that a process for removing the by-product gas is indispensable do.

As such, side storage is used to remove the by-product gas generated around the wafer.

At this time, in the conventional side storage, inert gas is supplied in the rear direction from the front surface of the side storage (the open side of the side storage in which the wafer is introduced), and the process gas and the fume floating in the fan filter unit (FFU) There is a problem that foreign substances of the wafer are introduced into the side storage to generate particles on the wafer to increase the defective rate and various components in the wafer processing apparatus cause corrosion and breakdown due to foreign substances such as process gas and fume.

It is an object of the present invention, which has been devised to solve the problems as described above, to provide an apparatus and a method for removing foreign matter such as process gas and fumes in a side storage by blowing an inert gas in a center direction of a wafer processing apparatus, The air is blown outward through the exhaust part to prevent corrosion and malfunction of various components in the wafer processing apparatus, and the exhaust part is connected to the exhaust line And to prevent foreign matter such as process gas and fumes from leaking out of the plant by exhausting the exhaust gas to the outside.

According to an aspect of the present invention for achieving the above object, the present invention provides a wafer processing apparatus having a wafer transfer robot for transferring wafers formed in the center of a main body, A blowing unit for generating a blowing gas; A side storage installed on both side surfaces of the main body for spraying the inert gas in the center direction of the wafer processing apparatus; And a discharge unit formed between the side storage unit and the side storage unit, the discharge unit discharging the process gas and the fumes in the wafer processing unit to the outside, A plurality of base plates spaced a predetermined distance apart from each other and arranged on an upper surface of the exhaust unit, the base plates being divided into a plurality of portions around the wafer transfer robot and fixed to the main body; An exhaust passage formed in each of the base plates; A perforated plate installed on each of the exhaust passages; An exhaust box installed at a lower portion of each of the exhaust passages and connected to an exhaust manifold; And one or more exhaust manifolds disposed on both sides of the wafer transfer robot, the exhaust manifold being connected to the at least one exhaust box and discharging air to the outside.

The exhaust box includes an exhaust box hole at the bottom and an exhaust box tube extending from the exhaust box hole. The exhaust manifold includes an inlet hole at an upper portion, an inlet pipe extending from the inlet hole, Hole, and the exhaust box pipe and the inflow pipe are connected.

The exhaust box is characterized in that the contact surface with the base plate is sealed with a sealing tape, and the contact surface of the perforated plate with the base plate is sealed with a sealing tape, And the contact surface with the main frame is sealed with a sealing tape.

As described above, according to the present invention, inert gas is blown in the center direction of the wafer processing apparatus in the side storage provided on both sides of the main body to remove foreign substances such as process gas and fumes in the side storage, The air is exhausted to the outside through the exhaust part to prevent corrosion and failure of various components in the wafer processing apparatus and the exhaust part is connected to the exhaust line in the factory and exhausted to the outside, It is possible to provide an exhaust apparatus for a wafer processing apparatus that prevents foreign substances such as process gases and fumes from leaking out.

1 is an exemplary view of a wafer processing apparatus according to a preferred embodiment of the present invention;
2 is a side view of a wafer storage in accordance with a preferred embodiment of the present invention.
Figures 3 and 4 are perspective views of wafer storage in accordance with a preferred embodiment of the present invention.
5 is an exploded perspective view of a wafer storage and inert gas injection unit according to a preferred embodiment of the present invention.
6 is an exploded perspective view of a wafer storage and an inert gas supply unit according to a preferred embodiment of the present invention.
7 is a perspective view of a side storage according to a preferred embodiment of the present invention.
8 is an illustration of wafer storage and case in accordance with a preferred embodiment of the present invention.
9 is an exemplary view illustrating opening and closing of a case according to a preferred embodiment of the present invention;
10 is an exemplary view illustrating a case according to a preferred embodiment of the present invention.
11 is an exploded perspective view of a base plate according to a preferred embodiment of the present invention.
12 and 13 are views illustrating an example in which a pier plate and an exhaust box are coupled to a base plate according to a preferred embodiment of the present invention.
14 is a perspective view of an exhaust manifold according to a preferred embodiment of the present invention.
15 is an exemplary view illustrating an exhaust flow of a wafer processing apparatus according to a preferred embodiment of the present invention.
16 is an exemplary view of an exhaust apparatus of a wafer processing apparatus according to a preferred embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings.

The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, the present invention will be described with reference to the drawings for explaining an exhaust apparatus of a wafer processing apparatus according to embodiments of the present invention.

1 is an exemplary view of a wafer processing apparatus according to a preferred embodiment of the present invention.

1, an exhaust apparatus of a wafer processing apparatus according to the present invention includes an inert gas injection unit 200 formed on the rear surface of a wafer storage 100, and an inert gas is blown from the inert gas injection unit 200 to the front surface of the wafer storage 100, The inert gas and the inert gas blown from the wafer storage 100 and the wafers W from the wafer storage device 100 are removed by removing the foreign materials such as the process gas and the fume on the surface of the wafer 100, 10 are exhausted to the outside through the exhaust part 400 on the lower side and air is exhausted to the outside through the exhaust part 400 so that various parts in the wafer processing device 10 can be corroded To a wafer processing apparatus (10) for preventing a failure.

FIG. 2 is a side view of a wafer storage according to a preferred embodiment of the present invention, FIGS. 3 and 4 are perspective views of a wafer storage according to a preferred embodiment of the present invention, and FIG. 5 is a cross- And an inert gas injection unit.

2 to 5, the side storage 20 of the wafer processing apparatus 10 includes a wafer storage 100 and an inert gas spraying unit 200.

The wafer storage 100 is formed with a wafer stacking shelf 110 capable of stacking the wafers 112 spaced apart at regular intervals so that a plurality of wafers 112 can be drawn into the wafer stacking shelf 110 The front is open.

At this time, a plurality of slots are formed at predetermined intervals on both sides of the wafer storage 100 so that the end of the wafer 112 can be inserted into the wafer storage shelf 110.

In addition, an inert gas spraying part 200 for spraying an inert gas is formed on the rear surface, and a window window 120 formed of a transparent material is formed on the upper part.

The window window 120 allows the user who drives the wafer processing apparatus 10 to visually check the internal state of the wafer storage 100.

The inert gas spraying unit 200 includes a nozzle cover 210, a nozzle plate 250, and a flow guide 240.

The nozzle cover 210 is formed with at least one supply port 220 for connecting an inert gas supply pipe 230 for supplying an inert gas to the front surface of the wafer storage 100. In the embodiment of the present invention, The first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228 are formed.

The nozzle plate 250 is formed with a plurality of spray holes.

At this time, in order to remove foreign substances such as process gas and fumes on the surface of the wafer 112 loaded on the wafer storage 100, the injection holes are positioned between the plurality of wafers 112 to be stacked, The nozzles 110 are formed to correspond to the gaps between the wafer stacking shelves 110 and the spray holes are formed on the entire surface of the nozzle plate as shown in FIG.

 The flow guide 240 is located between the nozzle cover 210 and the nozzle plate 250 to seal the space between the nozzle covers 250 and 250. The flow guide 240 forms a partition for partitioning a predetermined space for each supply port 220, In a preferred embodiment, a predetermined space of each of the four supply ports 220 is divided to form a first injection zone 242 corresponding to the first supply port 222, a second injection zone 242 corresponding to the second supply port 224, A third injection zone 246 corresponding to the third supply port 226, and a fourth injection zone 248 corresponding to the fourth supply port 228. [

Since the supply port 220 is formed by four supply ports 220, one side of the inert gas supply pipe 230 is connected to the first supply pipe 262 through a single pipe, and the inert gas supply pipe 230 230 are divided into four directions and connected to the first supply port 222, the second supply port 224, the third supply port 226, and the fourth supply port 228, respectively.

When the inert gas supply pipe 230 is connected to the first supply port 222, the second supply port 224, the third supply port 226 and the fourth supply port 228 to supply the inert gas, Inert gas is spread in the respective zones of the injection zone 242, the second injection zone 244, the third injection zone 246 and the fourth injection zone 248, and by blowing the inert gas supply pipe 230 Inert gas is injected into the plurality of injection holes of the nozzle plate 250.

At this time, the thickness of the flow guide 240 is such that the inert gas is supplied from each of the supply ports 220 and sufficiently spread in the respective regions formed in the flow guide 240 The reason for this is that the four supply ports 220 and the four jetting ports are divided into one or more ports so that the inert gas spreads in the jetting ports and is uniformly jetted to the plurality of jetting ports.

At this time, the plurality of injection holes formed in the nozzle plate 250 are spaced apart from each other by a predetermined distance so that inert gas is injected into a space between two adjacent wafers 112 of the loaded wafers 112, The entire surface of all the wafers 112 loaded on the wafer storage 100 and foreign substances such as process gases and fumes in the wafer storage 100 can be removed as a whole.

In addition, after the inert gas is removed from the wafer storage 100, the wafer W is discharged to the front surface of the wafer storage 100, discharged to the center of the wafer processing apparatus 10, and then positioned above the wafer processing apparatus 10 The wafer W is moved downward by the blowing unit 500 generating wind in the downward direction and exhausted to the outside by the exhaust unit 400 of the wafer processing apparatus 10. [

FIG. 6 is an exploded perspective view of a wafer storage and an inert gas supply unit according to a preferred embodiment of the present invention, and FIG. 7 is a perspective view of a side storage according to a preferred embodiment of the present invention.

Referring to FIGS. 6 and 7, the wafer storage 100 further includes an inert gas supply unit 260 at a lower portion thereof.

The inert gas supply unit 260 includes a first supply pipe 262 formed at an upper portion thereof and a second supply pipe 264 formed at a lower portion thereof and the first supply pipe 262 and the second supply pipe 264, Wherein the first supply pipe 262 is connected to the inert gas supply pipe 230 and further includes a flexible hose 280 so that the flexible hose 280 is connected to the second A supply pipe 264 and a main supply pipe 270 for supplying an inert gas to the wafer processing apparatus 10 are connected.

Details of the flexible hose 280 will be described later.

At this time, the inert gas supply unit 260 can control the supply amount of the inert gas supplied to the wafer storage 100, the supply pressure, and the like.

More specifically, the inert gas supply unit 260 further includes adjusting means including a valve, an actuator, and a gauge so as to adjust the supply amount and the supply pressure of the inert gas supplied from the second supply pipe 264 And the control means can be easily applied to the general control means, so that further explanation is omitted.

FIG. 8 is an exemplary view of a wafer storage and a case according to a preferred embodiment of the present invention, FIG. 9 is an exemplary view illustrating opening and closing of a case according to a preferred embodiment of the present invention, And Fig.

8 to 10, the side storage 20 includes a case 300 on which the wafer storage 100 is installed. The side storage 20 is formed on one side of the front side of the case 300, A hinge part 310 hinged to the wafer processing apparatus 10 such that a front surface of the wafer processing apparatus 10 is opened and closed from the wafer processing apparatus 10 and a hinge unit 310 formed on the other side of the front surface of the case 300, And a coupling holder 330 detachable from the coupling protrusion.

According to the embodiment of the present invention, it is preferable that the hinge part 310 includes three hinges and is safely opened and closed, and the coupling protrusion 320 formed on the wafer processing apparatus 10 and the coupling The holders 330 are coupled to each other to be opened and closed.

At this time, when the opening and closing operations of the coupling protrusion 320 and the coupling holder 330 are repeated, there is a variable of the position variation and an error may occur in the wafer processing apparatus 10. Therefore, even if the opening and closing operations are repeatedly performed, And it fixes the position so that it does not exist.

Since the second supply pipe 264 and the main supply pipe 270 are connected to each other by the flexible hose 280 as described above, the second supply pipe 264 and the main supply pipe 270 are connected to each other, So that it is not necessary to disconnect the main supply pipe 270.

At this time, it is preferable that the flexible hose 280 has a length corresponding to the opening / closing operation of the case 300 or has elasticity.

By opening and closing the door, it is possible to provide convenience of internal maintenance of the wafer storage 100 to be steadily managed.

FIG. 11 is an exploded perspective view of a base plate according to a preferred embodiment of the present invention, and FIGS. 12 and 13 are views illustrating an example in which a punched plate and an exhaust box are coupled to a base plate according to a preferred embodiment of the present invention. 14 is a perspective view of an exhaust manifold according to a preferred embodiment of the present invention.

11 to 14, the exhaust unit 400 of the present invention includes a perforated plate 480, a base plate 410, an exhaust passage 420, an exhaust box 430, an exhaust box pipe 440, An exhaust manifold 450, an exhaust outlet 470,

The base plate 410 includes at least one exhaust passage 420 and a perforated plate 480 is installed at an upper portion of the exhaust passage 420. An exhaust box 430 is installed at a lower portion of the exhaust passage 420 And an exhaust box pipe 440 having an exhaust box hole formed at a lower portion of the exhaust box 430 and extending from the exhaust box hole.

The exhaust manifold 450 includes an inlet pipe 460 extending from the inlet hole at the upper portion thereof and an exhaust outlet 470 at the lower portion thereof for discharging the introduced air to the outside.

The exhaust box pipe 440 and the inflow pipe 460 are connected to each other so that the exhaust box 430 and the exhaust manifold 450 are connected to each other.

At this time, the base plate 410 and the main frame of the wafer processing apparatus 10, the base plate 410 and the pier plate 480, the base plate 410, and the exhaust box 430, This is to prevent foreign substances such as process gas and fumes from leaking to equipment other than the exhaust unit 400 when the exhaust unit 400 is exhausted.

15 is an exemplary view illustrating an exhaust flow of a wafer processing apparatus according to a preferred embodiment of the present invention.

Referring to FIG. 15, the first exhaust box pipe of the first exhaust box provided at the lower portion of the first exhaust passage is connected to the first inlet pipe 461 of the first exhaust manifold 451, The second exhaust box pipe 442 of the second exhaust box 432 provided at the lower portion of the second exhaust manifold 452 is connected to the fourth inlet pipe 464 of the second exhaust manifold 452, The third exhaust box pipe 443 of the third exhaust box 433 provided at the lower portion of the second exhaust manifold 452 is connected to the fifth inlet pipe 465 of the second exhaust manifold 452, The fourth exhaust box pipe 444 of the fourth exhaust box 434 installed in the first exhaust manifold 451 is connected to the second inlet pipe 462 of the first exhaust manifold 451 and the fourth exhaust box pipe 444 of the fourth exhaust box 434 installed in the lower portion of the fifth exhaust passage 425 The fifth exhaust box pipe 445 of the fifth exhaust box 435 is connected to the third inlet pipe 463 of the first exhaust manifold 451 and the sixth exhaust box pipe 445 of the fifth exhaust box 435 is connected to the third inlet pipe 463 of the first exhaust manifold 451, The sixth exhaust box pipe 446 of the exhaust box 436 is connected to the sixth inlet pipe 466 of the second exhaust manifold 452 It is preferred.

An exhaust outlet 470 is provided below the first exhaust manifold 451 and the second exhaust manifold 452 to discharge the air introduced from the at least one exhaust box 430 to the outside.

At this time, it is preferable that each of the exhaust outlets 470 is connected to the exhaust line of the semiconductor factory and is discharged to the outside. By this discharge through the exhaust line, foreign substances such as process gas and fume are prevented from leaking into the semiconductor factory .

16 is an exemplary view of an exhaust apparatus of a wafer processing apparatus according to a preferred embodiment of the present invention.

16, there is shown a structure in which a fan-shaped portion 500, a base plate 410, and an exhaust manifold 450 are provided in the wafer processing apparatus 10 and a structure in which the exhaust outlet (not shown) of the exhaust manifold 450 470 are exposed to the outside of the wafer processing apparatus 10 so as to be connected to the exhaust line of the semiconductor factory.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the foregoing detailed description, and all changes or modifications derived from the meaning and scope of the claims and the equivalents thereof are included in the scope of the present invention Should be interpreted.

10: wafer processing apparatus 20: side storage
100: Wafer storage 110: Wafer loading shelf
112: wafer 120: window window
200: inert gas spraying part 210: nozzle cover
220: supply port 230: inert gas supply pipe
240: Flow guide 242: First jetting zone
244: Second injection area 246: Third injection area
248: Fourth jetting zone 250: Nozzle plate
260: inert gas spraying part 262: first supply pipe
264: second supply pipe 270: main supply pipe
280: Flexible hose 300: Case
310: hinge portion 320: engaging projection
330: coupling holder 400: exhaust part
410: base plate 420: exhaust passage
430: exhaust box 440: exhaust box pipe
450: exhaust manifold 460: inlet pipe
470: Exhaust outlet 480: Perforated plate
500:

Claims (3)

1. A wafer processing apparatus having a wafer transfer robot for transferring wafers formed at the center of a main body,
A blowing unit located at an upper portion of the main body and generating wind in a downward direction;
A side storage installed on both side surfaces of the main body for spraying the inert gas in the center direction of the wafer processing apparatus; And
And a discharge unit formed between the side storage units provided on both sides of the main body, the discharge unit discharging the process gas and the fumes in the wafer processing apparatus to the outside,
The exhaust unit includes:
A plurality of base plates spaced a predetermined distance below the side storage and disposed on an upper surface of the exhaust unit, the base plates being divided into a plurality of sections around the wafer transfer robot and fixed to the body;
An exhaust passage formed in each of the base plates;
A perforated plate installed on each of the exhaust passages;
An exhaust box installed at a lower portion of each of the exhaust passages and connected to an exhaust manifold; And
And one or more exhaust manifolds disposed on both sides of the wafer transfer robot, wherein the exhaust manifold is connected to the at least one exhaust box to discharge air to the outside.
The exhaust system according to claim 1,
A lower exhaust box hole and an exhaust box tube extending from the exhaust box hole,
The exhaust manifold includes:
Wherein the exhaust pipe includes an inflow hole, an inflow pipe extending from the inflow hole, and an exhaust hole at a lower portion, wherein the exhaust box pipe and the inflow pipe are connected to each other.
The exhaust system according to claim 1,
Characterized in that the contact surface with the base plate is sealed with a sealing tape,
The above-
Characterized in that the contact surface with the base plate is sealed with a sealing tape,
Wherein the base plate comprises:
And the contact surface with the main frame is sealed with a sealing tape.
KR1020150136690A 2015-09-25 2015-09-25 Exhaust device of wafer processing apparatus KR101758214B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020150136690A KR101758214B1 (en) 2015-09-25 2015-09-25 Exhaust device of wafer processing apparatus
PCT/KR2016/009823 WO2017052100A1 (en) 2015-09-25 2016-09-02 Exhaust device of wafer treating apparatus
CN201690001168.7U CN207966923U (en) 2015-09-25 2016-09-02 The exhaust apparatus of wafer processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150136690A KR101758214B1 (en) 2015-09-25 2015-09-25 Exhaust device of wafer processing apparatus

Publications (2)

Publication Number Publication Date
KR20170037294A KR20170037294A (en) 2017-04-04
KR101758214B1 true KR101758214B1 (en) 2017-07-14

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KR (1) KR101758214B1 (en)
CN (1) CN207966923U (en)
WO (1) WO2017052100A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020086707A1 (en) * 2018-10-26 2020-04-30 Applied Materials, Inc. Side storage pods, equipment front end modules, and methods for operating efems
WO2020086485A1 (en) * 2018-10-26 2020-04-30 Applied Materials, Inc. Side storage pods, equipment front end modules, and methods for operating equipment front end modules
KR20210045378A (en) * 2019-01-07 2021-04-26 피코앤테라(주) Wafer storage container
KR20230111298A (en) 2022-01-18 2023-07-25 주식회사 저스템 Exhaust apparatus for air flow stabilization in equipment front end module and semiconductor process device comprising the same

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