TWI763773B - Gas supply apparatus, control method of gas supply apparatus, loading port, and semiconductor manufacturing apparatus - Google Patents

Gas supply apparatus, control method of gas supply apparatus, loading port, and semiconductor manufacturing apparatus

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TWI763773B
TWI763773B TW107102667A TW107102667A TWI763773B TW I763773 B TWI763773 B TW I763773B TW 107102667 A TW107102667 A TW 107102667A TW 107102667 A TW107102667 A TW 107102667A TW I763773 B TWI763773 B TW I763773B
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port
nozzle
gas
target container
posture
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TW107102667A
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Chinese (zh)
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TW201842607A (en
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谷山育志
森鼻俊光
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日商昕芙旎雅股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773Conveying cassettes, containers or carriers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/50Fuel cells

Abstract

本發明之課題係提供可以對於對象容器的內部確實地供給指定氣體之氣體供給裝置、及具備該氣體供給裝置裝載埠及半導體製造裝置。   作為關於本發明解決手段之氣體導入裝置之單元(1),其特徵係具備:要將FOUP(100)的內部置換成指定氣體就得以使該氣體通過之外殼(3),密貼在FOUP(100)的一面所設置的埠(101)附近而且推壓就會使埠(101)開放之噴嘴(2),使噴嘴(2)於介著埠(101)得以將指定氣體往對象容器內噴射之使用姿勢及介著埠(101)不得將指定氣體往對象容器內噴射之待機姿勢之間動作進行擴縮之動作調整空間(5),與藉由對動作調整空間(5)將壓縮空氣投入排出來控制噴嘴(2)的動作之氣體導入部(4)。An object of the present invention is to provide a gas supply device capable of reliably supplying a predetermined gas to the inside of a target container, a loading port and a semiconductor manufacturing apparatus provided with the gas supply device. The unit (1) of the gas introduction device according to the solution of the present invention is characterized by having a casing (3) through which the gas can pass through by replacing the inside of the FOUP (100) with a predetermined gas, and is closely attached to the FOUP (100). 100) near the port (101) and push the nozzle (2) that will open the port (101), so that the nozzle (2) can spray the specified gas into the target container through the port (101). The use posture and the action adjustment space (5) between the standby postures where the designated gas can be sprayed into the target container through the port (101) cannot be expanded or contracted, and the compressed air is injected into the action adjustment space (5) by the action adjustment space (5). The gas introduction part (4) is discharged to control the operation of the nozzle (2).

Description

氣體供給裝置、氣體供給裝置之控制方法、裝載埠及半導體製造裝置Gas supply apparatus, control method of gas supply apparatus, loading port, and semiconductor manufacturing apparatus

本發明係有關供對具有對象空間的對象容器供給指定氣體用之氣體供給裝置、氣體供給裝置之控制方法、裝載埠及半導體製造裝置。The present invention relates to a gas supply device for supplying a specified gas to a target container having a target space, a control method of the gas supply device, a loading port, and a semiconductor manufacturing apparatus.

從前,在半導體之製造製程,為了生產率或品質之提昇,而在無塵室內進行晶圓的處理。於近年,滿足用以於高清淨的環境搬送・保管晶圓之對象容器之被稱作FOUP(Front-Opening Unified Pod)的收納用容器,與將FOUP內的晶圓在與半導體製造裝置之間取出放入而且在與搬送裝置之間進行FOUP的交付之介面部裝置之裝載埠(Load Port),係僅針對晶圓周圍的局部空間而利用為用以使清淨度更提昇之重要裝置。In the past, in the semiconductor manufacturing process, in order to improve productivity or quality, wafer processing was performed in a clean room. In recent years, a container for storage called FOUP (Front-Opening Unified Pod), which satisfies the target container for transferring and storing wafers in a high-clean environment, and a wafer in the FOUP between the semiconductor manufacturing equipment and the The load port of the interface device that takes out and puts in and delivers FOUP to and from the transfer device is an important device for improving the cleanliness only for the local space around the wafer.

然而,半導體製造裝置內雖被維持在適於晶圓的處理或加工之指定氣體氛圍,但在將晶圓從FOUP內送出到半導體製造裝置內時FOUP的內部空間與半導體製造裝置的內部空間是相互連通。因此,當FOUP內的環境之清淨度比起半導體製造裝置內還低時,FOUP內的氣體會進入半導體製造裝置內而對半導體製造裝置內的氣體氛圍帶來不良影響。However, although the inside of the semiconductor manufacturing apparatus is maintained in a designated gas atmosphere suitable for the handling or processing of the wafer, the internal space of the FOUP and the internal space of the semiconductor manufacturing apparatus when the wafer is sent out from the FOUP to the semiconductor manufacturing apparatus are interconnected. Therefore, when the cleanliness of the environment in the FOUP is lower than that in the semiconductor manufacturing apparatus, the gas in the FOUP enters the semiconductor manufacturing apparatus and adversely affects the gas atmosphere in the semiconductor manufacturing apparatus.

作為用以對應此類之問題之技術,於從前,揭示一種裝載埠,其具備於將收納晶圓的FOUP載置在裝載埠的載置台之狀態下將指定氣體(例如氮或乾燥空氣、惰性氣體等)由FOUP底面側注入並使之充滿內部,而將FOUP內置換成指定氣體氛圍之沖淨裝置。此類之由FOUP底面側將氮或乾燥空氣、惰性氣體等指定氣體注入FOUP內而將FOUP內置換成指定氣體氛圍之、所謂的下沖淨方式(Bottom purge method),相較於前沖淨方式(Front purge method)之沖淨裝置,優點在於指定氣體氛圍的到達濃度較高。As a technique for dealing with such problems, a loading port has been disclosed, which is equipped with a predetermined gas (for example, nitrogen or dry air, an inert gas, etc.) in a state where a FOUP containing a wafer is placed on a mounting table of the loading port. Gas etc.) is injected from the bottom side of the FOUP to fill the inside, and a flushing device that replaces the inside of the FOUP with a specified gas atmosphere. Such a so-called bottom purge method in which a specified gas such as nitrogen, dry air, and inert gas is injected into the FOUP from the bottom side of the FOUP, and the FOUP is replaced with a specified gas atmosphere. The advantage of the flushing device of the Front purge method is that the reaching concentration of the specified gas atmosphere is relatively high.

於是,在專利文獻1,揭示為了將指定氣體(例如氮或惰性氣體等)吹進FOUP內,而具備構成將設在對象容器之FOUP之閥利用指定氣體以外的氣體(壓縮空氣等)來操作之沖淨裝置之裝載埠。 [先前技術文獻] [專利文獻]Therefore, Patent Document 1 discloses that, in order to blow a predetermined gas (for example, nitrogen, an inert gas, etc.) into the FOUP, a valve having a configuration in which the FOUP provided in the target container is operated with a gas other than the predetermined gas (compressed air, etc.) The loading port of the flushing device. [Prior Art Literature] [Patent Literature]

[專利文獻1] 日本特開2015-88500號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-88500

[發明所欲解決之課題][The problem to be solved by the invention]

然而,從前的沖淨裝置,係為了開放FOUP的開口部,而利用指定氣體的壓力來操作設在對象容器之FOUP之閥之構造,因此,隨指定氣體壓力如何之不同,致使每單位時間的供給量產生偏差,結果,難以在指定作業時間內將FOUP內維持在高的指定氣體氛圍濃度,而有指定氣體氛圍的到達濃度低之缺點。However, in the conventional flushing device, in order to open the opening of the FOUP, the valve of the FOUP provided in the target container is operated by the pressure of the specified gas. The supply amount varies, and as a result, it is difficult to maintain a high concentration of the designated gas atmosphere in the FOUP within the designated operation time, and there is a disadvantage that the concentration of the designated gas atmosphere is low.

本發明,係著眼於此類之問題點而作成,主要目的在於提供可以將上述FOUP之對象容器的內部以更高的效率置換成指定氣體之氣體供給裝置、其控制方法及具備該氣體供給裝置之裝載埠以及半導體製造裝置。 [供解決課題之手段]The present invention has been made in view of such problems, and the main object of the present invention is to provide a gas supply device capable of exchanging the inside of the object container of the above-mentioned FOUP with a predetermined gas with higher efficiency, a control method thereof, and a gas supply device provided with the same. load ports and semiconductor manufacturing equipment. [Means for solving problems]

本發明係有鑑於上述之類的問題點,採取以下之類的手段。The present invention takes the following measures in view of the above-mentioned problems.

亦即,本發明之氣體供給裝置,其特徵係具備:要將指定氣體供給到對象容器內部就得以使該氣體通過之外殼構造部;具有設置於前述對象容器的一面且接觸到內部具備開閉機構的埠部之噴嘴部及使開閉機構開放的推壓部之噴嘴構造部;與要使前述噴嘴部於介著前述埠部得以將前述指定氣體往前述對象容器內供給的使用姿勢及介著前述埠部不得將前述指定氣體往前述對象容器內供給的待機姿勢之間動作進行擴縮之動作調整空間。That is, the gas supply device according to the present invention is characterized by comprising: a casing structure part which allows the gas to pass through when a predetermined gas is supplied to the inside of the target container; The nozzle part of the port part and the nozzle structure part of the pressing part that opens the opening and closing mechanism; and the use posture for the nozzle part to supply the specified gas into the target container through the port part, and the use posture between the The port shall not allow the movement adjustment space to expand or contract between the standby postures in which the specified gas is supplied into the target container.

根據這樣的裝置,不必拘泥於往對象容器內供給的指定氣體的壓力如何,可以為了讓噴嘴構造部動作而往對象容器內部適當地導入指定氣體。此外,噴嘴構造部不僅開放埠且藉由密貼在埠的附近而有效地迴避指定氣體往外部漏洩,所以能有效率地往對象容器內部導入指定氣體。結果,根據本發明,係可以將對象容器的內部以更高的效率置換成指定氣體。According to such a device, the predetermined gas can be appropriately introduced into the target container in order to operate the nozzle structure without being limited by the pressure of the predetermined gas supplied into the target container. In addition, the nozzle structure part not only opens the port, but also effectively avoids leakage of the specified gas to the outside by being closely attached to the vicinity of the port, so that the specified gas can be efficiently introduced into the target container. As a result, according to the present invention, the inside of the target container can be replaced with a predetermined gas with higher efficiency.

作為得以將對象容器的內部以高效率置換成指定氣體之具體的構成,可以舉出:噴嘴部,係藉由密貼於前述對象容器的一面所設置的前述埠部的外緣而防止前述對象容器內的氣體往外部流出;推壓部,係具有推壓前述開閉機構之推壓面及向前述對象容器內噴射要供給的指定氣體之噴射部之構成。As a specific configuration that can efficiently replace the inside of the target container with the specified gas, there is a nozzle part that prevents the target by being closely attached to the outer edge of the port provided on one side of the target container. The gas in the container flows out to the outside; the pressing part is composed of a pressing surface for pressing the opening and closing mechanism and a spraying part for spraying the specified gas to be supplied into the target container.

此外,作為供把對象容器內的氣體更有效率地置換成指定氣體用之動作調整空間之構成,可以列舉動作調整空間具有:設在外殼構造部及噴嘴部之間且於使噴嘴部密貼在埠部的外緣之密貼姿勢及從該密貼姿勢使噴嘴部與埠部分開的分開姿勢之間要使噴嘴部動作進行擴縮之第一動作調整空間;與設在噴嘴部與推壓部之間、要使推壓部於藉由離開埠部而使埠部閉止的閉止姿勢與藉由推壓埠部使該埠部開放的開放姿勢之間動作進行擴縮之第二動作調整空間。In addition, as the structure of the operation adjustment space for efficiently replacing the gas in the target container with the specified gas, the operation adjustment space is provided between the casing structure part and the nozzle part and the nozzle part is in close contact with the operation adjustment space. The first movement adjustment space for expanding and contracting the movement of the nozzle portion between the close contact posture of the outer edge of the port portion and the separation posture of separating the nozzle portion from the port portion from the close contact posture; Between the pressing parts, the second movement adjustment to make the pressing part move between the closed position in which the port is closed by moving away from the port and the open position in which the port is opened by pressing the port. space.

接著,作為供把對象容器內的氣體更有效率地置換成指定氣體用之具體的氣體供給裝置之控制方法,係具備:要將對象容器內部置換成指定氣體就得以使該氣體通過之外殼構造部,供藉由密貼於前述對象容器的一面所設置的埠部的外緣而防止前述對象容器內的氣體往外部流出用之噴嘴部,具有推壓埠部的推壓面及向對象容器內噴射指定氣體的噴射部之推壓部,設在外殼構造部及噴嘴部之間且於使噴嘴部密貼在前述埠部的外緣之密貼姿勢及從該密貼姿勢使噴嘴部與埠部分開的分開姿勢之間要使前述噴嘴部動作進行擴縮之第一動作調整空間,與設在噴嘴部與推壓部之間、要使推壓部於藉由離開前述埠部而使埠部閉止的閉止姿勢與藉由推壓埠部使該埠部開放的開放姿勢之間動作進行擴縮之第二動作調整空間之氣體供給裝置之控制方法,其特徵係藉由將前述控制用氣體往前述第一動作調整空間及前述第二動作調整空間加以投入排出來控制噴嘴部及推壓部之動作。Next, as a control method of a specific gas supply device for replacing the gas in the target container with the specified gas more efficiently, there is provided an outer casing structure that allows the gas to pass through by replacing the inside of the target container with the specified gas a nozzle part for preventing the gas in the target container from flowing out to the outside by closely adhering to the outer edge of the port provided on one side of the target container; The pressing part of the injection part for injecting the specified gas inside is provided between the casing structure part and the nozzle part, and the nozzle part is brought into close contact with the outer edge of the port part in a close contact posture and from the close contact posture, the nozzle part is brought into contact with the nozzle part. The first movement adjustment space for expanding and contracting the operation of the nozzle part is provided between the nozzle part and the pressing part so that the pressing part is separated from the port part. A control method of a gas supply device for adjusting a space by a second movement between a closed position in which the port is closed and an open position in which the port is opened by pushing the port to expand and contract is characterized by using the control The gas is injected and discharged into the first movement adjustment space and the second movement adjustment space to control the operation of the nozzle part and the pressing part.

再者,為了以更簡單的構成來控制噴嘴部及推壓部之動作,最好控制用氣體是往第一動作調整空間直接被投入排出之氣體;藉由進而具備連通第一動作調整空間及第二動作調整空間之連通路,得以擴縮第二動作調整空間。Furthermore, in order to control the operation of the nozzle part and the pressing part with a simpler structure, it is preferable that the control gas is directly injected and discharged into the first operation adjustment space; The communication path of the second action adjustment space can expand and contract the second action adjustment space.

接著,為了更有效地控制噴嘴部及推壓部之動作,最好連通路是作成在使噴嘴部動作成密貼在前述埠部的外緣之前述密貼姿勢之後使推壓部往開放姿勢動作之構成。Next, in order to more effectively control the operations of the nozzle portion and the pressing portion, it is preferable that the communication path is formed so that the pressing portion is in the open position after the nozzle portion is moved to the aforementioned close contact position in which the outer edge of the port portion is in close contact. The composition of action.

此外,作為得以有效利用上述氣體供給裝置之一例,可以舉出一種裝載埠,其特徵係具備複數個上述的氣體供給裝置,在使前述氣體供給裝置的推壓部連通到對象容器底面設置的複數個埠部之各個的狀態下,可以將對象容器內的氣體氛圍置換成氮或乾燥空氣之構成。In addition, as an example of effectively utilizing the above-mentioned gas supply device, there can be mentioned a loading port characterized by including a plurality of the above-mentioned gas supply devices, and a plurality of the above-mentioned gas supply devices are provided to communicate with the pressing portion of the gas supply device to the bottom surface of the target container. In the state of each port, the gas atmosphere in the target container can be replaced with nitrogen or dry air.

再者,於具備上述之裝載埠,接受被搬送而來的對象容器且將被收容在該對象容器內的晶圓在介著在該對象容器的前面形成的搬出搬入口而進行取出放入為特徵之半導體製造裝置,也可以得到前述效果。 [發明之效果]Furthermore, in the case where the loading port is provided, the target container to be transported is received, and the wafers contained in the target container are taken out and loaded through an unloading and loading port formed in front of the target container. The characteristic semiconductor manufacturing apparatus can also obtain the aforementioned effects. [Effect of invention]

以上,根據說明的本發明,係能提供可以將對象容器的內部藉由特定氣體以高效率置換之氣體供給裝置、其控制方法、及具備該氣體供給裝置之裝載埠以及半導體製造裝置。As described above, according to the present invention described above, it is possible to provide a gas supply device capable of efficiently replacing the inside of a target container with a specific gas, a control method thereof, a loading port including the gas supply device, and a semiconductor manufacturing apparatus.

以下,參照圖式詳細說明本發明一實施型態。Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

關於本實施型態之氣體供給裝置之沖淨噴嘴單元1,係例如圖1及圖2所示之可以安裝在被適用於裝載埠X的沖淨裝置P之單元。裝載埠X,係被搭載於半導體之製造製程使用的半導體製造裝置。於圖11,模式例示半導體製造裝置M的構成。半導體製造裝置M,被配置於無塵室內使用,包含:半導體製造裝置本體71、鄰接於半導體製造裝置本體71配置的移送室72、鄰接於移送室72配置的1個以上(在圖之例為3個)之裝載埠X。於半導體製造裝置M,本發明之沖淨對象容器之一例即圖2所示之FOUP100被載置於裝載埠X。接著,於FOUP100的門扉112,使裝載埠X的門部D密貼而使門扉112與門部D一體地移動開閉這些,藉此使被收容在FOUP100內的被收容體即模式地圖示之晶圓W對半導體製造裝置M進行取出放入之裝置。The flushing nozzle unit 1 of the gas supply device of the present embodiment is a unit that can be attached to the flushing device P applied to the loading port X as shown in FIGS. 1 and 2 , for example. The load port X is mounted on a semiconductor manufacturing apparatus used in a semiconductor manufacturing process. In FIG. 11 , the configuration of the semiconductor manufacturing apparatus M is schematically illustrated. The semiconductor manufacturing apparatus M is arranged and used in a clean room, and includes a semiconductor manufacturing apparatus main body 71, a transfer chamber 72 arranged adjacent to the semiconductor manufacturing apparatus main body 71, and one or more arranged adjacent to the transfer chamber 72 (in the example shown in the figure, 3) of the load port X. In the semiconductor manufacturing apparatus M, the FOUP 100 shown in FIG. 2 which is an example of the container to be rinsed according to the present invention is placed on the loading port X. As shown in FIG. Next, the door 112 of the FOUP 100 is brought into close contact with the door part D of the loading port X, and the door 112 and the door part D are moved together to open and close them, whereby the accommodated object accommodated in the FOUP 100 is schematically illustrated as The wafer W is an apparatus for loading and unloading the wafer W into the semiconductor manufacturing apparatus M.

於本實施型態所適用之FOUP100,如圖2所示,為一種已知之裝置,在內部收容複數枚晶圓W、構成介著在前面形成的搬出搬入口111而可以將該等晶圓W取出放入,且具備可以開閉搬出搬入口111的門扉112,故而省略詳細說明。又,在本實施型態,FOUP100的前面,係意味在載置於裝載埠X時與裝載埠X的門部D對面之側的面。在FOUP100的底面,如後述的圖5、7、9以假想虛線所示,沖淨用的埠101被設在指定處。埠101,例如,係作成以被嵌入FOUP100底面形成的開口部之中空筒狀密封墊圈(grommet seal)為主體。The FOUP 100 to which this embodiment is applied, as shown in FIG. 2 , is a known device that accommodates a plurality of wafers W in the interior, and constitutes a transfer port 111 formed on the front so that the wafers W can be interposed therebetween. It is provided with the door 112 which can open and close the carry-out port 111 for taking out and putting in, so the detailed description is omitted. In addition, in this embodiment, the front surface of the FOUP 100 means the surface on the side opposite to the door D of the load port X when it is mounted on the load port X. On the bottom surface of the FOUP 100, a port 101 for flushing is provided at a designated position, as shown by a virtual dotted line in FIGS. 5, 7, and 9 to be described later. The port 101 is formed, for example, with a hollow cylindrical gasket (grommet seal) inserted into an opening formed on the bottom surface of the FOUP 100 as a main body.

半導體製造裝置M,例如圖11所示,設置著具備裝載埠X、配置在相對地遠離裝載埠X的位置之半導體製造裝置本體71、配置在半導體製造裝置本體71與裝載埠X之間之移送室72;在移送室72內,設置將例如被載置於各裝載埠X的FOUP100內的晶圓W,1枚1枚地移送於FOUP100內與移送室72內之間、及移送室72內與半導體製造裝置本體71內之間之移送機721。又,也可以在FOUP100與移送室72之間、以及移送室72與半導體製造裝置本體71之間一盒盒地移送收納複數枚晶圓W的卡匣。利用這樣的構成,在無塵室,半導體製造裝置本體71內、移送室72內、及FOUP100內可維持在高清淨度。For example, as shown in FIG. 11 , the semiconductor manufacturing apparatus M is provided with a loading port X, a semiconductor manufacturing apparatus body 71 arranged at a position relatively far from the loading port X, and a transfer device arranged between the semiconductor manufacturing apparatus body 71 and the loading port X. Chamber 72 ; In the transfer chamber 72 , for example, wafers W placed in the FOUP 100 of each load port X are provided, and each wafer W is transferred one by one between the inside of the FOUP 100 and the inside of the transfer chamber 72 , and in the transfer chamber 72 The transfer machine 721 between the body 71 of the semiconductor manufacturing apparatus. Further, cassettes for accommodating a plurality of wafers W may be transferred in a cassette between the FOUP 100 and the transfer chamber 72 and between the transfer chamber 72 and the semiconductor manufacturing apparatus main body 71 . With such a configuration, in the clean room, the inside of the semiconductor manufacturing apparatus main body 71 , the inside of the transfer chamber 72 , and the inside of the FOUP 100 can be maintained at high cleanliness.

裝載埠X,如圖1所示,係具備以立起姿勢配置並具有門部D可以開閉開口部得以連通到FOUP100的搬出搬入口111之框架F,框架F中以略水平姿勢在遠離半導體製造裝置71的方向延伸之載置台B,與將沖淨用氣體注入FOUP100內、可以將FOUP100內的氣體氛圍置換成氮氣等沖淨用氣體之沖淨裝置P。The loading port X, as shown in FIG. 1, is provided with a frame F which is arranged in an upright posture and has a door D which can open and close an opening to communicate with the unloading and importing port 111 of the FOUP 100, and the frame F is in a slightly horizontal position away from the semiconductor manufacturing. The mounting table B extending in the direction of the device 71 and the flushing device P which injects flushing gas into the FOUP 100 and can replace the gas atmosphere in the FOUP 100 with a flushing gas such as nitrogen.

設在框架F的門部D,在將FOUP100載置於載置台B之狀態於密貼在FOUP100的前面設置的門扉112之狀態下可以於打開該門扉12開放搬出搬入口111之開放位置、與閉止搬出搬入口111之閉止位置之間動作。作為使門部D於開放位置與閉止位置之間至少昇降移動之門昇降機構(省略圖示)可以適用既知之機構。The door D provided on the frame F can open the door 12 to open the opening position of the unloading and importing entrance 111 when the FOUP 100 is placed on the mounting table B and the door 112 provided in close contact with the front of the FOUP 100. The movement between the closed positions of the unloading and unloading entrance 111 is closed. A known mechanism can be applied as a door lift mechanism (illustration omitted) for at least moving up and down the door portion D between the open position and the closed position.

載置台B,係以略水平姿勢被配置在框架F中從高度方向中央部稍微偏靠上方的位置之載置台,具有向上突出的複數個定位用突起(Kinematic Pin)81。於是,藉由使該等定位用突起81卡合在FOUP100底面形成的定位用凹部(省略圖示),謀求FOUP100定位於載置台B。此外,在載置台B,設置未圖示的就座感應裝置以檢測FOUP100是否在載置台B上被載置於指定的位置之為圖示的就座感應裝置82。定位用突起81及就座感應裝置82之構造或配置處可以因應規格等之不同而酌情設定/變更。The mounting table B is a mounting table which is arranged at a position slightly upward in the frame F from the center portion in the height direction in a substantially horizontal posture, and has a plurality of positioning protrusions (Kinematic Pins) 81 protruding upward. Then, the positioning of the FOUP 100 on the mounting table B is achieved by engaging the positioning protrusions 81 with the positioning recesses (not shown) formed on the bottom surface of the FOUP 100 . In addition, the seating sensing device 82 shown in the drawing is provided on the mounting table B to detect whether or not the FOUP 100 is placed at a predetermined position on the mounting table B, which is not shown. The structure or arrangement of the positioning protrusions 81 and the seating sensing device 82 can be set/changed as appropriate according to different specifications and the like.

沖淨裝置P,係具備在載置台B上使上端部露出來之狀態下被配置在指定處之複數個沖淨噴嘴單元1。The flushing device P is provided with a plurality of flushing nozzle units 1 arranged in a predetermined position on the mounting table B in a state where the upper end portion is exposed.

該等複數個沖淨噴嘴單元1,係對應於設在FOUP100底面的埠101的位置被安裝在載置台B上的適當位置,且可以接觸到設在FOUP100底部的埠101之單元。又,於本實施型態,各沖淨噴嘴單元1之外,在對應於埠101的任何地方適當配置排氣閥,構成當FOUP100內的壓力變高時得以將FOUP100內的氣體排出。該排氣閥之構成係依據既存構成為準,因而省略具體的說明。The plurality of flushing nozzle units 1 are installed at appropriate positions on the stage B corresponding to the positions of the ports 101 provided on the bottom surface of the FOUP 100 , and can contact the unit of the ports 101 provided on the bottom of the FOUP 100 . In addition, in this embodiment, the exhaust valve is appropriately arranged anywhere corresponding to the port 101 outside each flushing nozzle unit 1, so that the gas in the FOUP 100 can be discharged when the pressure in the FOUP 100 becomes high. The configuration of the exhaust valve is based on the existing configuration, and thus the detailed description is omitted.

此外,在此,具體地說明設置在FOUP100之埠101的構成。該埠101,如上述係與沖淨噴嘴單元1對應配置者,如例如在圖2之A部放大顯示,具備基台103,設置在基台103、且讓指定氣體流入之氣體流入口104,逆止閥(check valve)105,以逆止閥105可動之方式予以收納之閥室106,將逆止閥105彈推到氣體流入口104側之壓縮彈簧107,連通口108,支撐壓縮彈簧107之支撐板109,與過濾器110等。如此構成的埠101,是既存的構成因而省略詳細的說明。透過這樣的既存的埠101對FOUP100的內部導入沖淨氣體之從前的一般態樣如以下所述。亦即,使指定氣體之沖淨氣體流入氣體流入口104,藉由伴隨該沖淨氣體的流量之壓力使壓縮彈簧107壓縮,使在逆止閥105與基台103之間產生間隙。藉此,沖淨氣體,從該間隙經過閥室106與連通口108、通過過濾器110,被導入FOUP100的內部。In addition, here, the structure provided in the port 101 of the FOUP100 is demonstrated concretely. The port 101, which is arranged corresponding to the flushing nozzle unit 1 as described above, is shown enlarged, for example, in part A of FIG. 2, and includes a base 103, which is provided on the base 103 and has a gas inflow port 104 through which a predetermined gas flows. A check valve 105, a valve chamber 106 accommodated in such a way that the check valve 105 can move, pushes the check valve 105 to a compression spring 107 on the gas inflow port 104 side, a communication port 108, and supports the compression spring 107 The supporting plate 109, the filter 110 and so on. The port 101 configured in this way is an existing configuration, so detailed description is omitted. The conventional general state of introducing the flushing gas into the inside of the FOUP 100 through the existing port 101 is as follows. That is, the flushing gas of the predetermined gas flows into the gas inflow port 104 , and the compression spring 107 is compressed by the pressure according to the flow rate of the flushing gas, so that a gap is generated between the check valve 105 and the base 103 . Thereby, the flushed gas passes through the valve chamber 106 and the communication port 108 from the gap, passes through the filter 110 , and is introduced into the FOUP 100 .

接著,利用構成上述埠101之氣體流入口104、逆止閥105及壓縮彈簧107,構成關於本發明之開閉機構。Next, the opening and closing mechanism of the present invention is constituted by the gas inflow port 104, the check valve 105, and the compression spring 107 constituting the above-mentioned port 101.

各沖淨噴嘴單元1,係如圖3~圖9所示,具備作為噴嘴構造部之噴嘴2、將噴嘴2於可以升降之狀態下予以保持之作為外殼構造部之外殼3、與對於該外殼3要噴嘴2進行動作就將壓縮空氣投入排出之氣體導入部4。又,於本說明書,係模式地圖示該氣體導入部4。As shown in FIGS. 3 to 9 , each flushing nozzle unit 1 includes a nozzle 2 as a nozzle structure, a casing 3 as a casing structure for holding the nozzle 2 in a liftable state, and a casing for the casing. 3. To operate the nozzle 2, the compressed air is injected into the gas introduction part 4 for discharge. In addition, in this specification, the gas introduction part 4 is shown schematically.

在此,關於本實施型態之作為氣體供給裝置之沖淨噴嘴單元1,其特徵係具備:要將指定氣體供給到FOUP100的內部就得以使該氣體通過之外殼3;具有設置於FOUP100的一面且接觸到內部具備開閉機構的埠部的埠部101附近之作為噴嘴部之第一噴嘴21及作為使開閉機構開閉的推壓部之第二噴嘴22之噴嘴2;與設置擴及外殼3及噴嘴2、要使噴嘴2於介著埠101得以將指定氣體往對象容器內供給的使用姿勢及介著埠101不得將指定氣體往對象容器內供給的待機姿勢之間動作進行擴縮之動作調整空間5。此外,在關於本實施形態之沖淨噴嘴單元1,進而具有藉由往動作調整空間5投入排出控制用氣體之壓縮空氣以控制噴嘴2的動作之氣體導入部4。Here, the flushing nozzle unit 1 as a gas supply device according to the present embodiment is characterized by having a casing 3 that allows the gas to pass through when a predetermined gas is supplied to the inside of the FOUP 100 , and a surface provided on the FOUP 100 . And contact the nozzle 2 of the first nozzle 21 as the nozzle part and the second nozzle 22 as the pressing part for opening and closing the opening and closing mechanism in the vicinity of the port 101 with the opening and closing mechanism; Nozzle 2. To make the nozzle 2 operate between the use posture in which the specified gas can be supplied into the target container through the port 101 and the standby posture in which the specified gas cannot be supplied into the target container through the port 101. space 5. In addition, the flushing nozzle unit 1 according to the present embodiment further includes a gas introduction part 4 for controlling the operation of the nozzle 2 by injecting compressed air for discharging the control gas into the operation adjustment space 5 .

以下,說明作為氣體供給裝置之沖淨噴嘴單元1之各構成要素。Hereinafter, each constituent element of the flushing nozzle unit 1 as a gas supply device will be described.

外殼3,係要將對象容器之FOUP100之內部置換成指定氣體就得以使該氣體通過。該外殼3,係具有做成概略直方體形狀的外殼本體31、設在該外殼本體31的內壁35且噴嘴2的外周面所拼接的做成對的外環32、從外殼本體31外壁34向噴嘴2連通且供將壓縮空氣向噴嘴2側導入用的導入口33。具體說明,該導入口33係從外殼本體31的外壁34向內壁35貫通,連通到外殼3與噴嘴2之間被形成的動作調整空間5。The casing 3 is for allowing the gas to pass through by replacing the inside of the FOUP 100 of the target container with a predetermined gas. The casing 3 has a casing body 31 in the shape of a roughly rectangular parallelepiped, a pair of outer rings 32 arranged on the inner wall 35 of the casing body 31 and spliced with the outer peripheral surface of the nozzle 2 , and a pair of outer rings 32 formed from the outer wall 34 of the casing body 31 . The introduction port 33 communicates with the nozzle 2 and is used to introduce the compressed air to the nozzle 2 side. Specifically, the introduction port 33 penetrates from the outer wall 34 to the inner wall 35 of the casing body 31 , and communicates with the movement adjustment space 5 formed between the casing 3 and the nozzle 2 .

噴嘴2,係具有供藉由密貼於對象容器的一面所設置的埠101的外緣102而防止FOUP100內的氣體往外部流出用之第一噴嘴21,與具有推壓埠101的推壓面及向對象容器內噴射指定氣體之噴射部之第二噴嘴22。第一噴嘴21,係具有得以密貼在埠101外緣102之接觸面23,與供對第二噴嘴22無間隙地支撐用之墊片之內環24。第二噴嘴22,係具有供導入指定氣體用之氣體導入口25,在軸心部分把從該氣體導入口25被導入的指定氣體即氮氣要往上方導引就朝高度方向貫通之氣體導引路26,在先端抵接於對象容器的埠101、推壓得以開放該埠101內部的逆止閥105(圖2)之推壓面27,與從該推壓面27往基端側被形成狹縫狀且供將氮氣往FOUP100內導入用之氣體噴射口28。於是,在本實施型態,把從氣體導入口25朝水平方向導引指定氣體之沖淨用氣體之第二流路25a、與在該第二流路25a連續且朝垂直方向導引沖淨用氣體之第一流路26a,於固定相對位置之狀態下一體地構成。然而,本發明並不妨礙可以變更構成上述第一、第二流路26a、25a的相對位置之態樣。The nozzle 2 has a first nozzle 21 for preventing the gas in the FOUP 100 from flowing out by being closely attached to the outer edge 102 of the port 101 provided on one side of the target container, and a pressing surface having the pressing port 101 and the second nozzle 22 of the injection part of the injection part that injects the specified gas into the target container. The first nozzle 21 has a contact surface 23 that can be closely attached to the outer edge 102 of the port 101 , and an inner ring 24 of a gasket for supporting the second nozzle 22 without clearance. The second nozzle 22 has a gas introduction port 25 for introducing a predetermined gas, and guides a gas that penetrates in the height direction in order to guide the predetermined gas introduced from the gas introduction port 25, that is, nitrogen gas, at the axial center portion. The channel 26 is formed from the pressing surface 27 toward the proximal end side of the push surface 27 of the check valve 105 ( FIG. 2 ) that presses to open the port 101 of the target container at the tip end in contact with the port 101 of the target container. A slit-shaped gas injection port 28 for introducing nitrogen gas into the FOUP 100 . Therefore, in this embodiment, the second flow path 25a of the flushing gas that guides the predetermined gas in the horizontal direction from the gas introduction port 25 is continuous with the second flow path 25a and the flushing gas is guided in the vertical direction. The first flow path 26a for gas is integrally formed in a state where the relative position is fixed. However, the present invention does not prevent the aspect in which the relative positions of the first and second flow paths 26a and 25a can be changed.

動作調整空間5係具有:設在外殼3及第一噴嘴21之間且於使第一噴嘴21密貼在埠101的外緣102之密貼姿勢(P1)及從該密貼姿勢(P1)使第一噴嘴21與埠101分開的分開姿勢(P2)之間要使第一噴嘴21動作進行擴縮之第一動作調整空間51,與設在第一噴嘴21與第二噴嘴22之間、要使第二噴嘴22於藉由離開埠101(具體為逆止閥105)而使埠101閉止的閉止姿勢(Q2)與藉由推壓埠101(具體為逆止閥105)使該埠101開放的開放姿勢(Q1)之間動作進行擴縮之第二動作調整空間52,與連通該等第一動作調整空間51及第二動作調整空間52之連通路53。The movement adjustment space 5 is provided between the casing 3 and the first nozzle 21 and has a close contact posture ( P1 ) in which the first nozzle 21 is in close contact with the outer edge 102 of the port 101 , and a contact posture ( P1 ) from the close contact posture ( P1 ) The first movement adjustment space 51 for expanding and contracting the movement of the first nozzle 21 between the separation posture (P2) in which the first nozzle 21 is separated from the port 101, and the first movement adjustment space 51 provided between the first nozzle 21 and the second nozzle 22, The second nozzle 22 is to be in the closed position (Q2) in which the port 101 is closed by leaving the port 101 (specifically, the check valve 105 ) and the port 101 by pressing the port 101 (specifically, the check valve 105 ). The second movement adjustment space 52 that expands and contracts between the open open postures (Q1) and the communication path 53 that communicates with the first movement adjustment space 51 and the second movement adjustment space 52.

第一動作調整空間51,係得以在從上述外殼3的導入口33將導入氣體即壓縮空氣導入之後把第一噴嘴21的接觸面23從埠101的外緣102離開之分開姿勢(P2)往密貼到埠101的外緣102之密貼姿勢(P1)變更姿勢之空間。The first movement adjustment space 51 is in a separated posture (P2) in which the contact surface 23 of the first nozzle 21 is separated from the outer edge 102 of the port 101 after the introduction of the gas, that is, compressed air, from the introduction port 33 of the casing 3. A space for changing the posture of the sticking posture (P1) that is stuck to the outer edge 102 of the port 101.

第二動作調整空間52,係供在氣體被導入第一動作調整空間51且第一噴嘴21成為密貼姿勢(P1)之後,藉由壓縮空氣通過連通路53而被導入,把第二噴嘴22從藉由離開埠101(具體為逆止閥105)而使埠101閉止的閉止姿勢(Q2)、往藉由推壓該埠101(具體為逆止閥105)使該埠101開放的開放姿勢(Q1)變更姿勢用之空間。The second movement adjustment space 52 is for supplying compressed air through the communication passage 53 after the gas is introduced into the first movement adjustment space 51 and the first nozzle 21 is brought into the close contact position (P1), and the second nozzle 22 From the closed position (Q2) in which the port 101 is closed by leaving the port 101 (specifically, the check valve 105), to the open position in which the port 101 is opened by pressing the port 101 (specifically, the check valve 105) (Q1) Space for changing posture.

連通路53,係作成藉由對第一動作調整空間51供給控制用氣體並往第一、第二動作調整空間51、52導入氣體即壓縮空氣而將第一噴嘴21形成密貼姿勢(P1)且使第二噴嘴22往開放姿勢(Q1)動作,並且抽吸第一、第二動作調整空間51、52內的控制用氣體之壓縮空氣而將第二噴嘴22形成閉止姿勢(Q2)且將第一噴嘴21形成分開姿勢(P2)之構成。該連通路53,係在圖4、圖5、圖7及圖9以虛線顯示,在上述第一、第二噴嘴22的周方向設置一個或複數個。於是,該連通路53,係藉由調整其徑長及位置、數量,而設定成得以在壓縮空氣被導入時在上述第一動作調整空間51使第一噴嘴21往密貼姿勢(P1)變更姿勢之後,往第二動作調整空間52導入壓縮空氣且使第二噴嘴22往開放姿勢(Q1)變更姿勢。The communication passage 53 is formed so as to bring the first nozzle 21 into a close contact posture by supplying the control gas to the first operation adjustment space 51 and introducing compressed air, which is gas, into the first and second operation adjustment spaces 51 and 52 (P1). Then, the second nozzle 22 is moved to the open position (Q1), and the compressed air of the control gas in the first and second operation adjustment spaces 51 and 52 is sucked to form the second nozzle 22 into the closed position (Q2) and The first nozzle 21 has a configuration in a separated posture (P2). The communication passages 53 are shown by dotted lines in FIGS. 4 , 5 , 7 , and 9 , and one or a plurality of the communication passages 53 are provided in the circumferential direction of the first and second nozzles 22 . Then, the communication passage 53 is set so that the first nozzle 21 can be changed to the close contact position ( P1 ) in the first movement adjustment space 51 when the compressed air is introduced by adjusting the length, position, and number of the communication passage 53 . After the posture, compressed air is introduced into the second movement adjustment space 52 to change the posture of the second nozzle 22 to the open posture (Q1).

氣體導入部4,係供藉由往第一動作調整空間51及第二動作調整空間52投入排出不同於氮氣之氣體之一例之壓縮空氣,來控制第一噴嘴21及第二噴嘴22的動作用之部位。該氣體導入部4,係往第一動作調整空間51投入排出控制用氣體,藉由介著連通第一動作調整空間51及第二動作調整空間52之連通路53,也得以擴縮第二動作調整空間52。The gas introduction part 4 is for controlling the operation of the first nozzle 21 and the second nozzle 22 by injecting and discharging compressed air, which is an example of a gas other than nitrogen gas, into the first operation adjustment space 51 and the second operation adjustment space 52 part. The gas introduction part 4 injects and discharges the control gas into the first operation adjustment space 51 , and the second operation adjustment can also be expanded or contracted through the communication passage 53 connecting the first operation adjustment space 51 and the second operation adjustment space 52 . Space 52.

於本實施型態,可以藉由往動作調整空間5內導入壓縮空氣,從圖3~圖5所示之待機位置、亦即第一噴嘴21在分開姿勢(P2)且第二噴嘴22在閉止姿勢(Q2)之狀態,如圖6及圖7所示邊使第一噴嘴21為密貼姿勢(P1)密貼在埠101的外緣102邊使第二噴嘴22在閉止姿勢(Q2)密貼在埠101的外緣102也邊形成不使埠101開成之狀態,進而階段性地控制成如圖8及圖9所示之使用位置,形成藉由第二噴嘴22朝更上方突出、推壓面27將埠101(具體為逆止閥105)推上去使埠101開放之開放姿勢(Q1)之狀態。In this embodiment, compressed air can be introduced into the movement adjustment space 5 from the standby position shown in FIGS. 3 to 5 , that is, the first nozzle 21 is in the open position ( P2 ) and the second nozzle 22 is closed. In the state of the posture (Q2), as shown in FIGS. 6 and 7, the second nozzle 22 is in the closed position (Q2) while the first nozzle 21 is in the close contact posture (P1) and is closely attached to the outer edge 102 of the port 101. The outer edge 102 attached to the port 101 is also in a state where the port 101 is not opened, and is then controlled to the use position as shown in FIG. 8 and FIG. The pressing surface 27 pushes the port 101 (specifically, the check valve 105 ) up to open the port 101 in an open posture (Q1).

此外,當然如果從圖8及圖9所示之狀態(P1、Q1)藉由控制氣體導入部4來抽吸壓縮空氣,則經過上述圖6及圖7所示之狀態(P1、Q2),就會回到圖3~圖5所示之狀態(P2、Q2)。亦即,根據本實施型態,藉由將作為指定氣體之不同於氮氣之壓縮空氣由氣體導入部4投入排出,可以順暢且適切地進行構成噴嘴2之第一噴嘴21及第二噴嘴22各自之升降移動。In addition, as a matter of course, if the compressed air is sucked through the control gas introduction part 4 from the state (P1, Q1) shown in FIGS. 8 and 9, the state (P1, Q2) shown in the above-mentioned FIG. 6 and FIG. It will return to the state shown in Figure 3 to Figure 5 (P2, Q2). That is, according to the present embodiment, by injecting and discharging compressed air other than nitrogen gas as a predetermined gas from the gas introduction part 4, each of the first nozzle 21 and the second nozzle 22 constituting the nozzle 2 can be smoothly and appropriately performed. The up-and-down movement.

關於以上詳述的本實施形態之沖淨噴嘴單元1,藉由於單元化之狀態下安裝在裝載埠X的載置台B之複數個指定處(於本實施型態為載置台B的四隅附近),可以實現作為能將載置台B上被載置的FOUP100內的氣體氛圍置換成沖淨用氣體的沖淨裝置P之功能。The flushing nozzle unit 1 of the present embodiment described in detail above is installed at a plurality of designated places on the mounting table B of the loading port X in a unitized state (in the vicinity of the four corners of the mounting table B in this embodiment) , the function as a flushing device P that can replace the gas atmosphere in the FOUP 100 placed on the mounting table B with flushing gas can be realized.

此外,作為本實施型態之變形例,可以舉出圖10所示之作為氣體導入裝置之沖淨噴嘴單元1。針對該變形例對相當於上述實施型態的構成要素者附上相同圖號而且省略詳細的說明。Moreover, as a modification of this embodiment, the flushing nozzle unit 1 as a gas introduction means shown in FIG. 10 can be mentioned. In this modification, the same reference numerals are attached to the constituent elements corresponding to the above-described embodiment, and detailed descriptions thereof are omitted.

具體地說明,關於本變形例之沖淨噴嘴單元1,係不同於上述第二噴嘴22的形狀。第二噴嘴22,係在與推壓面27分開的位置設置開口29,將該開口29作成相當於氣體噴射口28。即使是這樣的噴嘴,也可以發揮上述實施型態同樣的效果。Specifically, the flushing nozzle unit 1 of this modification is different from the shape of the second nozzle 22 described above. The second nozzle 22 is provided with an opening 29 at a position separated from the pressing surface 27 , and the opening 29 corresponds to the gas injection port 28 . Even with such a nozzle, the same effect as the above-mentioned embodiment can be exhibited.

如上述,關於本實施型態之氣體供給裝置,其特徵係具備:要將對象容器的內部置換成指定氣體就得以使該氣體通過之外殼3,密貼在對象容器的一面所設置的埠101附近而且推壓就會使埠101開放之噴嘴2,設置擴及外殼3及噴嘴2且使噴嘴2於介著埠101得以將指定氣體往對象容器內供給之使用姿勢及介著埠101不得將指定氣體往對象容器內供給之待機姿勢之間動作進行擴縮之動作調整空間5,與藉由往動作調整空間5將空氣投入排出來控制噴嘴2的動作之氣體導入部4。As described above, the gas supply device according to the present embodiment is characterized by including the casing 3 through which the predetermined gas is allowed to pass by replacing the inside of the target container with the gas, and the port 101 provided in close contact with one surface of the target container. The nozzle 2 whose port 101 will be opened by pressing it nearby, is set to extend to the casing 3 and the nozzle 2, and the nozzle 2 can supply the specified gas into the target container through the port 101. The motion adjustment space 5 that operates to expand and contract between the standby positions for supplying the specified gas into the target container, and the gas introduction portion 4 that controls the operation of the nozzle 2 by injecting and discharging air into the motion adjustment space 5 .

藉由這樣作成,不必拘泥於往對象容器內供給的指定氣體的壓力如何,可以為了讓噴嘴2動作而往作為對象容器之FOUP100的內部適當地導入指定氣體。此外,噴嘴2不僅開放埠101且藉由密貼在埠101的附近而有效地迴避指定氣體往外部漏洩,所以能有效率地往對象容器內部導入指定氣體。結果,根據本實施型態,係能提供可以將對象容器的內部以更高的效率供給成指定氣體之沖淨噴嘴單元1、及具備該沖淨噴嘴單元1之沖淨裝置P及裝載埠X、以及具備該裝載埠X之半導體製造裝置M。With this configuration, the predetermined gas can be appropriately introduced into the FOUP 100 as the target container in order to operate the nozzle 2 without depending on the pressure of the specified gas to be supplied into the target container. In addition, the nozzle 2 not only opens the port 101, but also effectively avoids leakage of the specified gas to the outside by being closely attached to the vicinity of the port 101, so that the specified gas can be efficiently introduced into the target container. As a result, according to the present embodiment, it is possible to provide the flushing nozzle unit 1 capable of supplying the inside of the target container to the specified gas with higher efficiency, and the flushing device P and the loading port X provided with the flushing nozzle unit 1 , and a semiconductor manufacturing apparatus M having the loading port X.

在作為可以將對象容器的內部以高效率置換成指定氣體之具體的構成之本實施型態,噴嘴2之構成,係具有供藉由密貼於對象容器的一面所設置的埠101的外緣102而防止對象容器內的氣體往外部流出用之作為噴嘴部之第一噴嘴21,與具有推壓埠101的推壓面27及向對象容器內噴射氣體的噴射部之作為推壓部之第二噴嘴22。In the present embodiment, which is a specific structure that can efficiently replace the inside of the target container with a predetermined gas, the nozzle 2 is configured to have an outer edge through a port 101 provided in close contact with one surface of the target container. 102 to prevent the gas in the target container from flowing out to the outside, the first nozzle 21 serving as a nozzle part, and the second nozzle 21 serving as a pressing part having a pressing surface 27 having a pressing port 101 and a spraying part for spraying gas into the target container. Two nozzles 22 .

此外,在作為用以將對象容器內的氣體更有效率地置換成指定氣體之動作調整空間5的構成之一例之本實施型態,動作調整空間5適用構成具有:設在外殼3及第一噴嘴21之間且於使第一噴嘴21密貼在埠101的外緣102之密貼姿勢(P1)及從該密貼姿勢(P1)使第一噴嘴21與埠101分開的分開姿勢(P2)之間要使第一噴嘴21動作進行擴縮之第一動作調整空間51,與設在第一噴嘴21與第二噴嘴22之間、要使第二噴嘴22於藉由離開埠101而使埠101閉止的閉止姿勢(Q2)與藉由推壓埠101使該埠101開放的開放姿勢(Q1)之間動作進行擴縮之第二動作調整空間52。In addition, in the present embodiment, which is an example of the configuration of the operation adjustment space 5 for efficiently replacing the gas in the target container with the specified gas, the operation adjustment space 5 is applicable to the configuration having the following: Between the nozzles 21 and in the close contact posture ( P1 ) in which the first nozzle 21 is in close contact with the outer edge 102 of the port 101 , and the separation posture ( P2 ) in which the first nozzle 21 is separated from the port 101 from the close contact posture ( P1 ) ) between the first movement adjustment space 51 to make the first nozzle 21 move to expand and contract, and the first movement adjustment space 51 provided between the first nozzle 21 and the second nozzle 22 to allow the second nozzle 22 to move away from the port 101 The second movement adjustment space 52 for expanding and contracting the movement between the closed posture ( Q2 ) in which the port 101 is closed and the open posture ( Q1 ) in which the port 101 is opened by pressing the port 101 .

接著,關於本實施型態之沖淨噴嘴單元1之控制方法,係一種於作為用以將FOUP100內的氣體更有效率地置換成指定氣體之具體的構成之本實施型態,具有:設在外殼3及第一噴嘴21之間且於使第一噴嘴21密貼在埠101的外緣102之密貼姿勢(P1)及從該密貼姿勢(P1)使第一噴嘴21與埠101分開的分開姿勢(P2)之間要使第一噴嘴21動作進行擴縮之第一動作調整空間51,與設在第一噴嘴21與第二噴嘴22之間、要使第二噴嘴22於藉由離開埠101而使埠101閉止的閉止姿勢(Q2)與藉由推壓埠101使該埠101開放的開放姿勢(Q1)之間動作進行擴縮之第二動作調整空間52之沖淨噴嘴單元1適用之控制方法,其特徵係利用氣體導入部4,將壓縮空氣往該等第一動作調整空間51及第二動作調整空間52投入排出。Next, regarding the control method of the flushing nozzle unit 1 of the present embodiment, the present embodiment, which is a specific configuration for replacing the gas in the FOUP 100 with the specified gas more efficiently, has: Between the casing 3 and the first nozzle 21 and in the close contact position ( P1 ) in which the first nozzle 21 is in close contact with the outer edge 102 of the port 101 and the first nozzle 21 is separated from the port 101 from the close contact position ( P1 ) The first movement adjustment space 51 for expanding and contracting the first nozzle 21 between the separated postures (P2), and the first movement adjustment space 51 provided between the first nozzle 21 and the second nozzle 22 so that the second nozzle 22 can be The flushing nozzle unit of the flushing nozzle unit of the space 52 for the second movement to expand and contract between the closed posture (Q2) in which the port 101 is closed by leaving the port 101 and the open posture (Q1) in which the port 101 is opened by pressing the port 101 1. The applicable control method is characterized by using the gas introduction part 4 to inject and discharge compressed air into the first operation adjustment space 51 and the second operation adjustment space 52.

再者,為了以更簡單的構成來控制第一噴嘴21及第二噴嘴22之動作,於本實施型態,將控制用氣體導入裝置、作成把控制用氣體往第一動作調整空間51投入排出;藉由進而設置連通第一動作調整空間51及第二動作調整空間52之連通路53,得以也擴縮第二動作調整空間52。Furthermore, in order to control the operations of the first nozzle 21 and the second nozzle 22 with a simpler structure, in this embodiment, the control gas introduction device is designed to inject and discharge the control gas into the first operation adjustment space 51 . ; By further providing a communication path 53 that communicates with the first movement adjustment space 51 and the second movement adjustment space 52, the second movement adjustment space 52 can also be expanded and contracted.

接著,為了更有效地控制第一噴嘴21及第二噴嘴22之動作,於本實施型態,將連通路53、作成在使第一噴嘴21動作成密貼在埠101的外緣102之密貼姿勢(P1)之後使第二噴嘴22往開放姿勢(Q1)動作之構成。Next, in order to control the operations of the first nozzle 21 and the second nozzle 22 more effectively, in the present embodiment, the communication path 53 is formed so as to make the first nozzle 21 operate so as to closely adhere to the outer edge 102 of the port 101. A configuration in which the second nozzle 22 is moved to the open posture (Q1) after the sticking posture (P1).

此外,關於本實施型態之半導體製造裝置M,其特徵係鄰接設置在裝載埠X,接受被搬送而來的沖淨對象容器之FOUP100且將被收容在該FOUP100內的晶圓W在與該FOUP100內之間介著在FOUP100的前面形成的搬出搬入口111而進行取出放入。In addition, the semiconductor manufacturing apparatus M of the present embodiment is characterized in that the FOUP 100 which is disposed adjacent to the load port X and receives the conveyed cleaning object container, and the wafer W contained in the FOUP 100 is placed in the FOUP 100 with the FOUP 100. The inside of the FOUP 100 is taken in and out through the carry-out and carry-out port 111 formed on the front surface of the FOUP 100 .

以上,說明本發明之實施型態,但本發明並不以上述實施型態之構成為限。於上述實施型態,氣體導入部4,係揭示往第一動作調整空間51及第二動作調整空間52投入排出作為與氮氣不同之氣體之一例之壓縮空氣之態樣,當然,作為控制用氣體並不以壓縮空氣為限,也可以使用氮氣或其他惰性氣體、或者乾燥之空氣。The embodiments of the present invention have been described above, but the present invention is not limited to the configurations of the above embodiments. In the above-described embodiment, the gas introduction part 4 is shown in a state where compressed air, which is an example of a gas different from nitrogen gas, is injected and discharged into the first operation adjustment space 51 and the second operation adjustment space 52, and of course, as a control gas. Not limited to compressed air, nitrogen or other inert gas, or dry air can also be used.

於上述實施型態,藉由對第1動作調整空間導入壓縮空氣來形成噴嘴機構上昇之上昇用動作調整空間,但是也可以進而設置利用壓縮空氣之並非抽吸而是導入來使噴嘴機構降下之降下用動作調整空間。針對第2動作調整空間,也同樣地,不只是上昇用動作調整空間,也可以設置降下用動作調整空間。此外,也可以利用與彈簧等彈性彈推之組合來形成上昇用、降下用之任一動作調整空間。In the above-mentioned embodiment, the movement adjustment space for the upward movement of the nozzle mechanism is formed by introducing the compressed air into the first movement adjustment space. The lowering adjusts the space with the motion. Similarly, not only the movement adjustment space for raising, but also the movement adjustment space for lowering may be provided for the second movement adjustment space. In addition, it is also possible to form any movement adjustment space for ascending and descending by combining with elastic urging such as a spring.

於是,在上述實施型態,利用構成第一流路(26a)之作為推壓部之第二噴嘴22形成將閥即埠101開放之構成,但形成第一流路(26a)之構件之外,也可以設置開放埠101之推壓部。此外,於上述實施型態,形成第二流路25a之構件為適用對著外殼3相對地移動之構成,但也可以作成將第二流路對外殼固定、對第一流路得以相對地動作之構成。Therefore, in the above-described embodiment, the second nozzle 22 serving as the pressing portion constituting the first flow path (26a) is used to open the port 101 that is the valve, but other than the member forming the first flow path (26a), the A pushing portion of the opening port 101 may be provided. In addition, in the above-described embodiment, the member forming the second flow path 25a is adapted to move relatively with respect to the casing 3, but the second flow path may be fixed to the casing and relatively movable with respect to the first flow path. constitute.

此外,例如於上述實施型態係例示將動作調整空間51,52與通氣孔以1對1的關係形成之態樣,但也可以採用將連通到1個動作調整空間的通氣孔形成複數個之構成。此外,於上述實施型態係揭示僅以利用氣體導入部4之控制壓縮空氣來控制噴嘴2之態樣,但並非否定藉由彈性彈推噴嘴可以進行動作之態樣。In addition, for example, in the above-described embodiment, the operation adjustment spaces 51 and 52 and the ventilation holes are formed in a one-to-one relationship, but it is also possible to form a plurality of ventilation holes that communicate with one operation adjustment space. constitute. In addition, in the above-mentioned embodiment, the mode of controlling the nozzle 2 only by the control compressed air of the gas introduction part 4 is disclosed, but the mode that the nozzle can be operated by elastically pushing the nozzle is not denied.

其他的構成,也在不逸脫本發明的要旨的範圍下,可以有種種變更之可能。Other configurations can be variously changed without departing from the gist of the present invention.

1‧‧‧氣體供給裝置(沖淨噴嘴單元;purge nozzle unit)2‧‧‧噴嘴構造部(噴嘴)21‧‧‧噴嘴部(第一噴嘴)22‧‧‧推壓部(第二噴嘴)3‧‧‧外殼構造部(外殼)4‧‧‧氣體導入部5‧‧‧動作調整空間51‧‧‧第一動作調整空間52‧‧‧第二動作調整空間53‧‧‧連通路X‧‧‧裝載埠P‧‧‧沖淨裝置100‧‧‧對象容器(FOUP)1‧‧‧Gas supply device (purge nozzle unit) 2‧‧‧Nozzle structure part (nozzle) 21‧‧‧Nozzle part (first nozzle) 22‧‧‧Pushing part (second nozzle) 3‧‧‧Shell structure part (casing) 4‧‧‧Gas introduction part 5‧‧‧Operation adjustment space 51‧‧‧First operation adjustment space 52‧‧‧Second operation adjustment space 53‧‧‧Communication path X‧ ‧‧Loading Port P‧‧‧Flushing Device 100‧‧‧Object Container (FOUP)

圖1係關於本發明一實施型態之外觀圖。   圖2係關於同實施型態之模式的側剖面圖。   圖3係關於同實施型態之重要部分的外觀圖。   圖4係關於圖3之模式的剖面圖。   圖5係關於圖3之中央側剖面圖。   圖6係關於圖3之動作說明圖。   圖7係關於圖5之動作說明圖。   圖8係關於圖3之動作說明圖。   圖9係關於圖5之動作說明圖。   圖10係關於同實施型態的變形例之對應於圖8之外觀圖。   圖11係關於實施型態的半導體製造裝置之模式平面圖。FIG. 1 is an external view of an embodiment of the present invention. Fig. 2 is a side sectional view of the mode of the same embodiment. Figure 3 is an external view of an important part of the same embodiment. FIG. 4 is a cross-sectional view of the pattern of FIG. 3. FIG. Fig. 5 is a side sectional view of the center of Fig. 3 . Fig. 6 is an explanatory diagram of the operation of Fig. 3 . Fig. 7 is an explanatory diagram of the operation of Fig. 5 . Fig. 8 is an explanatory diagram of the operation of Fig. 3 . Fig. 9 is an explanatory diagram of the operation of Fig. 5 . Fig. 10 is an external view corresponding to Fig. 8 concerning a modification of the same embodiment. Fig. 11 is a schematic plan view of the semiconductor manufacturing apparatus of the embodiment.

1‧‧‧氣體供給裝置(沖淨噴嘴單元;purge nozzle unit) 1‧‧‧Gas supply device (purge nozzle unit)

2‧‧‧噴嘴構造部(噴嘴) 2‧‧‧Nozzle structure (nozzle)

3‧‧‧外殼構造部(外殼) 3‧‧‧Shell Structure (Shell)

4‧‧‧氣體導入部 4‧‧‧Gas inlet

21‧‧‧噴嘴部(第一噴嘴) 21‧‧‧Nozzle (First Nozzle)

22‧‧‧推壓部(第二噴嘴) 22‧‧‧Pushing part (second nozzle)

23‧‧‧接觸面 23‧‧‧contact surface

26‧‧‧氣體導引路 26‧‧‧Gas guide

27‧‧‧推壓面 27‧‧‧Pushing surface

28‧‧‧氣體噴射口 28‧‧‧Gas injection port

31‧‧‧外殼本體 31‧‧‧Enclosure body

33‧‧‧導入口 33‧‧‧Inlet port

34‧‧‧外壁 34‧‧‧External Wall

P1‧‧‧密貼姿勢 P1‧‧‧Close Posture

Q1‧‧‧開放姿勢 Q1‧‧‧Open posture

Claims (8)

一種氣體供給裝置,其特徵係具備:要將指定氣體供給到對象容器內部就得以使該氣體通過之外殼構造部;具有設置於前述對象容器的一面且接觸到內部具備開閉機構的埠部之噴嘴部,在前述噴嘴部內可升降地設置,使開閉機構按壓而開放的推壓部之噴嘴構造部;要使前述噴嘴部於介著前述埠部得以將前述指定氣體往前述對象容器內供給的使用姿勢及介著前述埠部不得將前述指定氣體往前述對象容器內供給的待機姿勢之間動作進行擴縮之動作調整空間。 A gas supply device, comprising: a casing structure part through which a predetermined gas is supplied into a target container to allow the gas to pass; and a nozzle provided on one surface of the target container and in contact with a port having an opening and closing mechanism inside part, a nozzle structure part of a pressing part that is provided in the nozzle part so as to be able to be raised and lowered, and is pressed and opened by the opening and closing mechanism; the nozzle part is used to supply the specified gas into the target container through the port part. The movement adjustment space in which the movement between the posture and the standby posture in which the specified gas cannot be supplied into the target container through the port portion cannot be expanded or contracted. 如申請專利範圍第1項記載之氣體供給裝置,其中前述噴嘴部,係藉由密貼於前述對象容器的一面所設置的前述埠部的外緣而防止前述對象容器內的氣體往外部流出;前述推壓部,係具有推壓前述開閉機構之推壓面及向前述對象容器內噴射前述指定氣體之噴射部。 The gas supply device according to claim 1, wherein the nozzle portion is closely attached to the outer edge of the port portion provided on one side of the target container to prevent the gas in the target container from flowing out to the outside; The said pressing part has a pressing surface which presses the said opening and closing mechanism, and the injection part which injects the said predetermined gas into the said object container. 如申請專利範圍第2項記載之氣體供給裝置,其中前述動作調整空間係具有:設在前述外殼構造部及前述噴嘴部之間且於使前述噴 嘴部密貼在前述埠部的外緣之密貼姿勢及從該密貼姿勢使前述噴嘴部與前述埠部分開的分開姿勢之間要使前述噴嘴部動作進行擴縮之第一動作調整空間;與設在前述噴嘴部與前述推壓部之間、要使前述推壓部於藉由離開前述埠部而使前述埠部閉止的閉止姿勢與藉由推壓前述埠部使該埠部開放的開放姿勢之間動作進行擴縮之第二動作調整空間。 The gas supply device according to claim 2, wherein the operation adjustment space is provided between the housing structure portion and the nozzle portion and is configured to allow the nozzle The first movement adjustment space for expanding and contracting the movement of the nozzle portion between the close contact posture in which the mouth portion is closely attached to the outer edge of the port portion and the separation posture in which the nozzle portion is separated from the port portion from the close contact posture ; and being provided between the nozzle portion and the pressing portion, the pressing portion is to be in a closed posture in which the port portion is closed by moving away from the port portion, and the port portion is opened by pressing the port portion. The second action to adjust the space for expansion and contraction between the open postures. 一種氣體供給裝置之控制方法,具備:要將對象容器內部置換成指定氣體就得以使該氣體通過之外殼構造部,供藉由密貼於前述對象容器的一面所設置的埠部的外緣而防止前述對象容器內的氣體往外部流出用之噴嘴部,具有推壓前述埠部的推壓面及向前述對象容器內噴射前述指定氣體的噴射部之推壓部,設在前述外殼構造部及前述噴嘴部之間且於使前述噴嘴部密貼在前述埠部的外緣之密貼姿勢及從該密貼姿勢使前述噴嘴部與前述埠部分開的分開姿勢之間要使前述噴嘴部動作進行擴縮之第一動作調整空間,與設在前述噴嘴部與前述推壓部之間、要使前述推壓部於藉由離開前述埠部而使前述埠部閉止的閉止姿勢與藉由推壓前述埠部使該埠部開放的開放姿勢之間動作進行擴縮之第二動作調整空間之氣體供給裝置之控制方法,其特徵係 藉由將控制用氣體往前述第一動作調整空間及前述第二動作調整空間加以投入排出來控制前述噴嘴部及前述推壓部之動作。 A control method of a gas supply device, comprising: a casing structure part through which a predetermined gas is allowed to pass by replacing the inside of a target container with a predetermined gas; A nozzle portion for preventing the gas in the target container from flowing out to the outside has a pressing surface for pressing the port portion and a pressing portion for a spray portion for spraying the specified gas into the target container, and is provided on the housing structure portion and the The nozzle parts are operated between the nozzle parts and between the close contact posture in which the nozzle part is brought into close contact with the outer edge of the port part and the separation posture in which the nozzle part and the port part are separated from the close contact posture. The first movement adjustment space for expanding and contracting is provided between the nozzle portion and the pressing portion, and the pressing portion is to be in a closed posture in which the port portion is closed by moving away from the port portion, and the pressing portion is pressed. A control method of a gas supply device for a second action adjusting space in which the port portion is pressed to open the port portion to move between the opening positions to expand and contract, which is characterized by: The operation of the nozzle part and the pressing part is controlled by injecting and discharging the control gas into the first operation adjustment space and the second operation adjustment space. 如申請專利範圍第4項記載之氣體供給裝置之控制方法,其中前述控制用氣體係往前述第一動作調整空間直接被投入排出之氣體;藉由進而具備連通前述第一動作調整空間及前述第二動作調整空間之連通路,得以擴縮前述第二動作調整空間。 The control method of the gas supply device according to the claim 4 of the scope of application, wherein the gas for control is directly injected and discharged into the first operation adjustment space; by further comprising the communication between the first operation adjustment space and the first operation adjustment space The communication path between the two movement adjustment spaces can expand and contract the second movement adjustment space. 如申請專利範圍第5項記載之氣體供給裝置之控制方法,其中前述連通路,係作成在使前述噴嘴部動作成密貼在前述埠部的外緣之前述密貼姿勢之後使前述推壓部往前述開放姿勢動作之構成。 The control method of a gas supply device according to claim 5, wherein the communication path is formed so that the pressing portion is moved after the nozzle portion is moved into the close contact posture in which it is in close contact with the outer edge of the port portion. The composition of the movement to the above-mentioned open posture. 一種裝載埠,其特徵係具備複數個申請專利範圍第1~3項任一項記載的氣體供給裝置,作成在使前述氣體供給裝置的前述推壓部連通到前述對象容器底面設置的複數個前述埠部之狀態下,可以將前述對象容器內的氣體氛圍置換成氮或乾燥空氣之構成。 A loading port comprising a plurality of gas supply devices according to any one of claims 1 to 3 of the scope of application, wherein a plurality of the gas supply devices are provided to communicate the pressing portion of the gas supply device to the bottom surface of the target container In the state of the port, the gas atmosphere in the target container can be replaced with nitrogen or dry air. 一種半導體製造裝置,其特徵係具備:申請專利範圍第7項記載之裝載埠、半導體製造裝置本體、配置於前述裝載埠與前述半導體製造裝置本體之間的移送室;接受被搬送而來的對象容器,使被收容在該對象容器內的晶圓透過在對象容器的前面形成的搬出搬入口而進行取出放入。 A semiconductor manufacturing apparatus, characterized by comprising: a loading port as described in item 7 of the scope of application, a semiconductor manufacturing apparatus body, a transfer chamber disposed between the loading port and the semiconductor manufacturing apparatus body; A container for taking out and inserting the wafers accommodated in the target container through an unloading and carrying port formed on the front surface of the target container.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6164664A (en) * 1998-03-27 2000-12-26 Asyst Technologies, Inc. Kinematic coupling compatible passive interface seal
US6319297B1 (en) * 1998-03-27 2001-11-20 Asyst Technologies, Inc. Modular SMIF pod breather, adsorbent, and purge cartridges
US9105673B2 (en) * 2007-05-09 2015-08-11 Brooks Automation, Inc. Side opening unified pod

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7328727B2 (en) * 2004-04-18 2008-02-12 Entegris, Inc. Substrate container with fluid-sealing flow passageway
JP2011166047A (en) 2010-02-15 2011-08-25 Tadashi Kamimura Gas introduction device and method of introducing gas
JP6131534B2 (en) * 2012-06-11 2017-05-24 シンフォニアテクノロジー株式会社 Purge nozzle unit, load port, mounting table, stocker
JP5939080B2 (en) * 2012-08-07 2016-06-22 シンフォニアテクノロジー株式会社 Purge nozzle unit, purge device, load port
JP6135066B2 (en) 2012-08-10 2017-05-31 シンフォニアテクノロジー株式会社 Purge nozzle unit, purge device, load port

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6164664A (en) * 1998-03-27 2000-12-26 Asyst Technologies, Inc. Kinematic coupling compatible passive interface seal
US6319297B1 (en) * 1998-03-27 2001-11-20 Asyst Technologies, Inc. Modular SMIF pod breather, adsorbent, and purge cartridges
US9105673B2 (en) * 2007-05-09 2015-08-11 Brooks Automation, Inc. Side opening unified pod

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