TWI821435B - Side storage pods, equipment front end modules, and methods for operating equipment front end modules - Google Patents

Abstract

Electronic device processing assemblies including an EFEM with at least one side storage pod attached thereto. The side storage pod has a side storage pod container. A supply conduit extends between an upper plenum of the EFEM to the side storage pod container. A fan causes purge gas to simultaneously flow into the EFEM chamber and into the side storage pod container. The fan also causes recirculation of the purge gas from the EFEM chamber. Methods of operating EFEMs and EFEMs are also disclosed.

Description

Side storage compartment, equipment front-end module and method of operating equipment front-end module

The present disclosure relates to electronic device manufacturing, and more particularly to equipment front-end modules (EFEMs), side storage bays (SSPs), and methods for operating EFEMs.

An electronic device manufacturing assembly may include a plurality of processing chambers arranged around a host housing defining a transfer chamber, and one or more load gate chambers configured to move substrates into and out of the transfer chamber.

Processing of substrates (e.g., semiconductor components such as wafer precursors, silicon-containing wafers, masks, mask wafers, or glass-containing sheets) in electronic device manufacturing can be performed in multiple tools in which the substrate travels Between tools in a substrate carrier (such as a front-end unified bay (FOUP)). Exposure of the substrate to certain processing components (eg, compounds and/or gases) during processing can degrade the substrate if the substrate is not properly removed after processing. For example, acids can be formed on the substrate through exposure to components, which can degrade components fabricated on the substrate.

Accordingly, there is a need for improved electronic device processing components, apparatus, and methods for controlling environmental conditions of substrates during processing.

A side storage compartment, including: a first chamber; a first side storage container, the first side storage container is located in the first chamber, the first side storage container is configured to receive from an equipment front-end module one or more substrates, the first side storage container includes an opening configured to be adjacent to a first opening of the device front end module; a container air chamber, the container air chamber is connected to the first side the storage container is in fluid communication; and a first supply conduit coupled to the container plenum and configured to deliver a gas flow from an upper plenum into the container plenum.

An electronic device processing component, including: a device front-end module, the device front-end module includes a device front-end module chamber, the device front-end module chamber has one or more interface openings and is connected to the device front-end module An upper air chamber in which the chamber is in fluid communication; one or more side storage compartments, the one or more side storage compartments are coupled to a main body of the front end module of the device, each of the one or more side storage compartments One includes: a first chamber; a first side storage container located in the first chamber, the first side storage container configured to receive a or more substrates, the first side storage container includes a first opening located adjacent to a first opening of the front-end module cavity of the device; a first container air chamber, the first container a plenum in fluid communication with the first side storage container; and a first supply conduit coupled between the upper plenum and the first container plenum and configured to deliver a plenum from the upper plenum The flushing gas flows into the first container gas chamber.

A method of operating a front-end module of equipment, including the following steps: providing a front-end module of equipment, the front-end module of equipment having an upper air chamber and an equipment front-end module chamber in fluid communication with the upper air chamber, and a side storage compartment, the side storage compartment includes a side storage container; flushing gas flows from the upper air chamber into the equipment front-end module chamber, And at the same time, it flows from the upper air chamber into the side storage container located in the side storage compartment; the flushing gas is discharged from the side storage container into the front-end module chamber of the equipment; and the flushing gas is discharged from the front-end module chamber of the equipment. At least a portion of the purge gas is recirculated into the upper plenum.

100: Electronic device processing system

101:Host shell

102:Transfer chamber

103:Transfer manipulator

106:Controller

108A: First processing chamber group

108B: First processing chamber group

108C: Second processing chamber group

108D: Second processing chamber group

108E: The third processing chamber group

108F: The third processing chamber group

112: Loading gate equipment

112A:Loading lock chamber

112B:Loading lock chamber

114:EFEM

114B:EFEM body

114C:EFEM chamber

115:Load port

116:Substrate carrier

117:EFEM manipulator

118:Environmental control equipment

118A: Flushing gas supply

118B:Air supply

120:Side storage compartment

121: Maintenance door

122:door

123: Supply baffle

124: Side storage container

125:Supply pipeline

126:Open your mouth

127:SSP shell

128:Recirculation catheter

130: Sensor

132:Exhaust pipe

202:Substrate

204: Upper air chamber

205:Fan

208:Gas supply

210: Side storage chamber

212:Entrance

214:Part

216:Base

220: filter

222:Filter

224: Homogenizing plate

226: Container air chamber

227:Heater

302:Open your mouth

304: Size

306: Size

500:Method

502:Block

504:Block

506:Block

508:Block

The drawings described below are for illustrative purposes only and are not necessarily drawn to scale. The accompanying drawings are not intended to limit the scope of the present disclosure in any way.

1 illustrates a schematic top view of an electronic device processing assembly including a side storage compartment (SSP) in accordance with one or more embodiments of the present disclosure.

Figure 2 illustrates a side cross-sectional view of an EFEM including an SSP coupled to an EFEM body in accordance with one or more embodiments of the present disclosure.

3 illustrates a front plan view of a supply baffle of an SSP in accordance with one or more embodiments of the present disclosure.

Figure 4 illustrates a front plan view of an EFEM containing an SSP in accordance with one or more embodiments of the present disclosure.

Figure 5 illustrates a flowchart depicting an example method of operating an EFEM in accordance with one or more embodiments of the present disclosure.

Reference will now be made in detail to example embodiments of the disclosure illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or similar parts throughout the several views. Unless specifically stated otherwise, features of the various embodiments described herein may be combined with each other.

The fabrication of electronic devices can involve exposing substrates to different chemicals during a plurality of processes. Degassing of the substrate may occur between different treatments applied to the substrate. Some treatments applied to substrates may cause the substrate to outgas corrosive chemicals such as fluorine, bromine and/or chlorine. If these gases are not substantially completely removed from the substrate and its environment, the gases may degrade the substrate.

In accordance with one or more embodiments of the present disclosure, electronic device processing assemblies, EFEMs with SSPs, and methods suitable for improved substrate processing are provided. The components, apparatus, and methods described herein may provide efficiencies and/or process improvements in substrate processing by controlling the environmental exposure of the substrate, particularly by controlling conditions within one or more SSPs coupled to the device front-end module. One or more side storage containers may be configured to be receivable as part of the SSP and may include a substrate retainer therein to receive and support substrates, such as during idle periods before and/or after processing is applied to the substrates. container (e.g., shelf).

In one or more embodiments, the purge gas may flow from a side storage container through the substrate located in the side storage container and into the EFEM chamber. Gases can be recirculated within the EFEM and some gases can be vented from the base of the EFEM. In some embodiments, the gas can pass through a chemical filter located in the upper portion of the EFEM. Some of the filtered gas can then be recycled back to the EFEM chamber. In some embodiments, the recirculation path of the gas can be through an access door to the EFEM, which can minimize the space occupied by the recirculation path. The gas recirculated into the EFEM chamber contains certain chemical components, which are filtered and minimized by the chemical filter. Additionally, substrates exposed to purge gases within an EFEM may have certain environmental conditions, such as being relatively dry and/or having relatively low _O2 levels.

Further details of example embodiments of SSPs, EFEMs including SSPs, and methods of operating EFEMs will be described with reference to Figures 1-5 herein.

1 illustrates a schematic diagram of an example embodiment of an electronic device processing system 100 in accordance with one or more embodiments of the present disclosure. Electronic device processing system 100 may include a host housing 101 having housing walls defining a transfer chamber 102 . Transfer robot 103 (shown as a dashed circle) may be at least partially housed within transfer chamber 102 . Transfer robot 103 may be configured to place substrates to or retrieve substrates from a destination via operation of arms (not shown) of transfer robot 103 . Substrate, as used herein, may refer to items used in the fabrication of electronic devices or circuit components, such as semiconductor wafers, silicon-containing wafers, patterned or unpatterned wafers, glass plates, masks, and the like.

Movement of the various arm components of the transfer robot 103 may be controlled by appropriate commands when commanded by the controller 106 to a drive assembly (not shown) containing a plurality of drive motors of the transfer robot 103 . Signals from the controller 106 can cause the various components of the transfer robot 103 to operate. move. Suitable feedback mechanisms may be provided for one or more of these components through various sensors such as position encoders.

In the depicted embodiment, the transfer chamber 102 may be square or slightly rectangular in shape, although other shapes are possible (eg, hexagonal, etc.) and may include a plurality of small pixels on the walls of the transfer chamber 102 . flat. The transfer robot 103 may be adept at transferring and/or retracting substrates, such as while entering a chamber set (as shown). The facets may be planar, and the entrance into the chamber group may be located along the individual facets. However, other suitable shapes and numbers of facets and process chambers for the mainframe housing 101 are possible.

The destination of the transfer robot 103 may be the first processing chamber group 108A, 108B that is coupled to the facet of the transfer chamber 102 and may be configured and operable to transfer thereto. Processing is performed on the substrate. The treatment may be any suitable treatment, such as plasma vapor deposition (PVD) or chemical vapor deposition (CVD), etching, annealing, pre-cleaning, metal or metal oxide removal, etc. Other processes can be performed on the substrate therein.

The destination of the transfer robot 103 may also be the second processing chamber group 108C, 108D, which may be opposite to the first processing chamber group 108A, 108B. The second processing chamber set 108C, 108D may be coupled to the second facet of the transfer chamber 102 and may be configured to perform any suitable process on the substrate, such as any of the processes described above. Likewise, the destination of the transfer robot 103 may also be the third processing chamber group 108E, 108F, which may be opposite the load gate device 112 coupled to the third facet of the transfer chamber. third Processing chamber sets 108E, 108F may be configured to perform any suitable process on a substrate, such as any of the processes described above.

Substrates may be received from the EFEM 114 into the transfer chamber 102 and may also exit the transfer chamber 102 to the EFEM 114 via a load gate device 112 coupled to a surface (eg, a rear wall) of the EFEM 114 . Load lock apparatus 112 may include one or more load lock chambers (eg, such as load lock chambers 112A, 112B). Load gate chambers 112A, 112B included in load gate apparatus 112 may be single wafer load lock (SWLL) chambers, multi-wafer chambers, or combinations thereof.

EFEM 114 may be an enclosure having walls (eg, such as front, rear, side, top, and bottom walls) that form EFEM chamber 114C. One or more loading ports 115 may be provided on one of the walls of the EFEM 114 (eg, the front wall) and may be configured to receive and dock therein one or more substrate carriers 116 (eg, FOUP ). Three substrate carriers 116 are shown, but a greater or lesser number of substrate carriers 116 may interface with the load port 115 at the EFEM 114 .

EFEM 114 may include a conventionally constructed suitable loading/unloading robot 117 (hereinafter referred to as an "EFEM robot", as shown in dashed lines) within its EFEM chamber 114C. Once the door of the substrate carrier 116 is opened, the EFEM robot 117 may be configured and operated to extract the substrates from the substrate carrier 116 and feed the substrates into one or more load gate chambers of the load gate apparatus 112 via the EFEM chamber 114C. 112A, 112B.

Once the door of the substrate carrier 116 is opened, the EFEM robot 117 may also be configured and operated to extract substrates from the substrate carrier 116 and feed them into the SSP 120 while they idle awaiting processing. SSP 120 may be coupled to the sidewall of EFEM 114. EFEM robot 117 may be further configured to extract and load substrates from and into side storage bay 120 before and after processing in one or more processing chambers 108A-108F. In some embodiments, EFEM robot 117 is a high-Z robot configured to access substrates stacked in SSP 120 that are greater than 26 feet high, or even 52 feet high or higher. The SSP 120 may include a maintenance door 121 to allow an operator to access the interior of the SSP 120 when necessary (eg, in an error situation or during maintenance/cleaning).

In the depicted embodiment, EFEM chamber 114C may be provided with environmental controls that provide an environmentally controlled atmosphere therein. In particular, environmental control device 118 may be coupled to EFEM chamber 114C and may be operable to monitor and/or control environmental conditions within EFEM chamber 114C. In some embodiments, and at certain times, EFEM chamber 114C may receive therein a purge gas (eg, an inert and/or non-reactive gas) from purge gas supply 118A, such as argon (Ar), nitrogen ( N ₂ ), or helium (He). In other embodiments, or at other times, air (eg, dry filtered air) may be provided from air supply 118B. Environmental conditions within EFEM chamber 114C may exist within the interior of side storage container 124 located within and as part of SSP 120 . In some embodiments, SSP 120 may have substrate holders located therein to receive substrates without the use of side storage containers. Although not shown in FIG. 1 , in some embodiments, flush gas supply 118A and/or air supply 118B may be coupled to SSP 120 to optionally supply gas/air directly to SSP 120 , as indicated by arrow 208 .

In more detail, the environmental control device 118 may control at least one or more of the following within the EFEM chamber 114C: 1) relative humidity (RH); 2) temperature (T); 3) _O2 amount; and/or 4 ) flushing gas volume. Other environmental conditions of the EFEM chamber 114C may be monitored and/or controlled, such as the gas flow rate into the EFEM chamber 114C, or the pressure in the EFEM chamber 114C, or both.

99.9995%，H₂O

5ppm)用作 環境控制設備118中的沖洗氣體供應118A。可使用其他H₂O水平。 In some embodiments, environmental control device 118 includes controller 106 . Controller 106 may include a suitable processor (eg, a microprocessor), memory, and electronics for receiving input from one or more sensors 130 and controlling one or more valves to control the EFEM Environmental conditions within chamber 114C. In one or more embodiments, environmental control device 118 may monitor relative humidity (RH) by sensing RH in EFEM chamber 114C using sensor 130 . Any suitable type of sensor for measuring relative humidity may be used, such as a capacitive type sensor. RH may be reduced by flowing an appropriate amount of purge gas from purge gas supply 118A of environmental control device 118 into EFEM chamber 114C. As described herein, the inert and/or non-reactive gas from purge gas supply 118A may be argon, N ₂ , helium, other non-reactive gases, or mixtures thereof. In some embodiments, for example, compressed bulk inert gases with low H ₂ O levels (e.g., purity

99.9995%, H ₂ O

5 ppm) is used as the purge gas supply 118A in the environmental control device 118. Other _H2O levels can be used.

In another aspect, sensor 130 may measure a plurality of environmental conditions. For example, in some embodiments, the sensor 130 may measure the relative humidity RH value as described above. In one or more embodiments, the predetermined reference relative humidity value may be less than 1000 ppm humidity, less than 500 ppm humidity, or even less than 100 ppm humidity, depending on the specific substrate being in the electronic device processing assembly 100 or being exposed to the EFEM 114 environment. Humidity levels that can be tolerated for the specific treatment being practiced. Sensor 130 may also measure the level of oxygen (O ₂ ) within EFEM chamber 114C. In some embodiments, a control signal from the controller 106 to the valve of the environmental control device 118 may initiate the flow of an appropriate amount of purge gas from the purge gas supply 118A into the EFEM chamber 114C to control the level of oxygen (O ₂ ) to Below the critical _O2 value. In one or more embodiments, the critical value of O ₂ may be less than 50 ppm, less than 10 ppm, or even less than 5 ppm, depending on the implementation for the particular substrate in the electronic device processing system 100 or exposed to the EFEM 114 environment. _O2 levels that can be tolerated (without affecting quality) for a specific treatment. In some embodiments, sensor 130 may sense the oxygen level in EFEM chamber 114C to ensure that the oxygen level is above a safety threshold level to allow entry into EFEM chamber 114C.

Sensor 130 may also measure absolute or relative pressure within EFEM 114. In some embodiments, controller 106 may control entry from purge gas supply 118A to EFEM chamber 114C or from elsewhere. The flow of purge gas of EFEM 114 to control the pressure in EFEM chamber 114C.

In some embodiments, the environmental control device 118 of the electronic device processing assembly 100 may include an air supply 118B coupled to the EFEM chamber 114C. Air supply 118B may be coupled to EFEM chamber 114C or elsewhere within EFEM 114 through suitable piping and one or more valves.

In the embodiments depicted herein, controller 106 may be an overall system controller that includes a processor (eg, a microprocessor), memory, and a controller adapted to receive control inputs from sensors 130 (eg, relative humidity and /or oxygen) and peripheral components that implement closed loop or other suitable control schemes. In some embodiments, the control scheme may vary the flow rate of gas introduced into EFEM 114 to achieve predetermined environmental conditions in EFEM chamber 114C. In some other embodiments, the control scheme may determine when to transfer the substrate into the EFEM 114.

As will be described in detail below, in operation, purge gas is circulated from the upper plenum 204 of the EFEM 114 into the EFEM chamber 114C while being circulated into the SSP 120 via one or more supply conduits 125 . The gas system flows to the substrate via supply baffle 123 and into EFEM chamber 114C. Gas exits side storage compartment 120 and enters EFEM chamber 114C. One portion is recirculated via recirculation conduit 128 and the other portion is exhausted via exhaust duct 132 .

Turning now to Figures 2-4 , details of the SSP 120 and how the SSP 120 is coupled to the wall of the EFEM body are described. 2 is a side cross-sectional elevation view of EFEM 114 including SSP 120 coupled to EFEM body 114B. Figure 3 depicts details of the gas supply baffle 123. FIG. 4 is a front elevation view of the EFEM 114 including the SSP 120 coupled to the EFEM body 114B of the EFEM 114 . In some embodiments, SSP 120 may be removably coupled to EFEM 114 . SSP 120 may be used to store substrate 202 under specific environmental conditions. For example, side storage chamber 120 may store substrates 202 under the same environmental conditions as maintained in EFEM chamber 114C, except that the substrates may be exposed to relatively high purge gas flow rates. SSP 120 may be fluidly coupled to (ie, in fluid communication with EFEM chamber 114C) and may receive recirculated gas (eg, an inert gas) from upper plenum 204 within EFEM 114 . Accordingly, substrates 202 stored in SSP 120 are exposed to the same environmental conditions as EFEM chamber 114C except for flow rate. The SSP 120 may include a supply conduit 125 that carries recirculated gas from the upper plenum 204 of the EFEM 114 to the SSP 120, further allowing substrates 202 stored in the SSP 120 to be continuously exposed to desired environmental conditions.

Recirculated flush gas may be pushed from upper plenum 204 into supply conduit 125 and EFEM chamber 114C by fan 205 located adjacent to upper plenum 204. In some embodiments, the gas flow through SSP 120 is 150-200 cfm (4.25-5.67 cm), or even 150-175 cfm (4.25-5.0 cm). In some embodiments, some new gas (eg, an inert or non-reactive gas) may additionally or alternatively be supplied to supply conduit 125 via gas supply 208 . This flow can supplement the flow rate through the SSP 120 to ensure that the minimum flow rate through is achieved. Optionally, a flow control mechanism, such as a flow control valve (not shown), may be provided in supply conduit 125 to control the flow rate therein. Some small amounts of gas from EFEM chamber 114C may be exhausted from exhaust 132 to the outside of EFEM 114 . Therefore, the volume of purge gas in EFEM chamber 114C may be slowly exchanged over time.

SSP 120 may include and be adapted to receive one or more side storage containers 124 . In some embodiments, SSP 120 may receive one or more vertically aligned side storage containers 124 within side storage chambers 210 of SSP 120 . The side storage container 124 may include an opening 126 facing the EFEM chamber 114C and may be positioned adjacent an inlet 212 to access the recirculation conduit 128 . Recirculation duct 128 includes the portion 214 of door 122 that leads to fan 205 and upper plenum 204 . Recirculation conduit 128 may contain additional passages as shown to allow gas flow around base 216 of EFEM robot 117 , for example.

The side storage container 124 may be sealed within the SSP housing 127 so that exhaust gases from the interior of the side storage container 124 may not enter the interior of the chamber 210 of the SSP 120 . Thus, as shown by the plurality of gas flow arrows, a portion of the purge gas may exit EFEM chamber 114C via exhaust 132 to the outside of EFEM 114 while another portion of the purge gas may pass through recirculation conduit 128 and through portion 214 of access door 122 Recycle and return.

Filter 220 may be located in the gas flow path created by fan 205. For example, the filter 220 may be located near the upper plenum 204 so that the flushing gas pushed by the fan 205 passes through the filter 220 . In some embodiments, filter 220 may be a chemical filter to filter one or more gases degassed by substrate 202 in SSP 120 after manufacturing processes are applied. In some embodiments, chemical filter 220 is suitable for filtering chlorine, bromine, and/or fluorine. In some embodiments, filter 220 may filter a base gas, such as ammonia (NH ₃ ), to less than or equal to 5.0 ppb. In some embodiments, the filter 220 can remove acid gases such as fluorine (F), chlorine (Cl), bromine (Br), acetate (OAc), nitrogen dioxide (NO ₂ ), nitrate (NO ₃ ) , phosphate (PO ₄ ), hydrogen fluoride (HF) and hydrochloric acid (HCl) are filtered to equal to or less than 1.0ppb. In some embodiments, filter 220 may be an activated carbon filter.

99.99%)可能對在基板上製造的電子部件有害的微粒。進一步地，在一些實施例中，可使用包含遍布的小孔的均化板224以提供均勻的流動經過並進入EFEM腔室114C。均化板224可包含複數個開口及/或多孔材料以適用以均勻地分配來自上氣室204的氣體流動均勻地跨EFEM腔室114C。 In some embodiments, a filter 222 may be provided to filter small particles from entering the EFEM chamber 114C. The filter can be fine enough to filter (e.g.,

99.99%) of particles that may be harmful to electronic components manufactured on substrates. Further, in some embodiments, a homogenizing plate 224 containing small holes throughout may be used to provide uniform flow through and into the EFEM chamber 114C. The homogenizing plate 224 may include a plurality of openings and/or a porous material adapted to evenly distribute gas flow from the upper plenum 204 evenly across the EFEM chamber 114C.

In some embodiments, gas supplied to SSP 120 via conduit 125 may be located downstream of filters 220, 222, such as coupled to the space between filter 222 and homogenizing plate 224.

In some embodiments, heater 227 may also be located in the gas flow generated by fan 205. Heater 227 can heat the purge gas to a predetermined temperature as the exhaust gas is recirculated into EFEM chamber 114C and to SSP 120. In some embodiments, heater 227 may be used to generate Heat is used to act as a reactant and/or to change the relative humidity in the EFEM chamber 114C and/or the side storage chamber 120 . In some embodiments, heater 227 may heat the gas in EFEM 114 to increase degassing from substrate 202 located in side storage chamber 120 . Heater 227 can increase the gas temperature in EFEM chamber 114C and SSP 120 to 5 degrees Celsius or higher, 10 degrees Celsius or higher, or even 5 degrees Celsius to 25 degrees Celsius above the EFEM 114 external ambient temperature.

In some embodiments, filters 220, 222, heater 227, and homogenization plate 224 may be combined in one or more different combinations. In some embodiments, filters 220, 222, heater 227, and homogenization plate 224 may be provided in a different order than shown in Figure 2 . For example, the positions of the homogenizing plate 224 and the filters 220, 222 can be exchanged; the heater 227 and the filter 220 or 222 can be exchanged. Any feasible arrangement and combination of filters 220, heaters 227, and/or homogenization plates 224 may be used.

In some embodiments, supply conduit 125 to SSP 120 may include a filter (not shown) and/or a heater (not shown). Supply conduit 125 enables gas flow into SSP 120 via vessel plenum 226 . Disposed between the container plenum 226 and the remaining side storage container 124 is a supply baffle 123 positioned and arranged with openings appropriately sized to be evenly distributed over the base plate 202 within the side storage container 124 Distribute substantially laminar gas flow.

An example embodiment of supply baffle 123 is shown in FIG. 3 . In the illustrated example embodiment of SSP 120 , supply conduit 125 flows gas into the lower portion of vessel plenum 226 . Thus, as shown in FIG. 3 , supply baffle 123 includes an array of openings 302 , wherein the size dimension 304 of the openings at the lower end of supply baffle 123 is smaller than the size dimension 306 of the openings at the upper end of supply baffle 123 . The size of the opening 302 may gradually increase from the lower end to the upper end of the supply baffle 123 . The size of the opening is selected to compensate for the supply conduit 125 coupled to the lower portion of the vessel plenum 226 by allowing a uniform amount of gas to flow into the side storage vessel 124 along the entire height of the side storage vessel 124 . In other words, a smaller opening at the lower portion of the container plenum 226 restricts gas flow more than a larger opening at the top. In some embodiments, opening 302 may range in size from approximately 2 mm to 20 mm, for example. Smaller openings 304 with smaller diameters may be located near the exhaust ports to balance gas flow. In some embodiments, size dimension 306 may be between 15 mm and 17 mm. The array of openings 302 shown includes circular openings 302, but any feasible shape of openings may be used.

In some embodiments, where the supply conduit is coupled to the vessel plenum at a different location (e.g., in the middle), the array of openings can be modified to compensate for the different locations (e.g., the smaller openings can be in the middle, while Larger openings can be located at the top and bottom).

By extending return conduit portion 214 past access door 122, the space occupied by return conduit 128 is kept to a minimum. As mentioned above, the return conduit portion 214 in the access door 122 may be coupled to the upper plenum 204 at the top of the EFEM 114 . Fan 205 may help draw flush gas into upper plenum 204 from return duct 128 and return duct portion 214 . Upper plenum 204 may contain or be coupled to cause laminar gas flow through the EFEM chamber. Chamber 114C and SSP 120 openings. Chemical and/or particulate filters may be located in upper plenum 204 .

Turning now to FIG. 5 , an example method 500 of operating an EFEM is depicted as a flow diagram in accordance with some embodiments. The method 500 includes providing an EFEM having an upper plenum 204 and an EFEM chamber 114C in fluid communication with the upper plenum 204, and a side storage compartment 120 including a side storage container 124 (block 502). Purge gas flows from the upper plenum 204 into the EFEM chamber 114C and simultaneously from the upper plenum 204 into the side storage container 124 located within the SSP 120 (block 504). Gas is also exhausted from side storage container 124 into EFEM chamber 114C. At the same time, at least a portion of the purge gas from EFEM chamber 114C is recycled back into upper plenum 204 (block 506). In some embodiments, at least some of the purge gas from EFEM chamber 114C is flushed from EFEM chamber 114C via exhaust 132 (block 508).

The foregoing description discloses exemplary embodiments of the disclosure. Modifications of the above-described apparatus, systems, and methods that fall within the scope of this disclosure will be apparent to those of ordinary skill in the art to which this invention belongs. Accordingly, while the disclosure has been disclosed in connection with example embodiments, it should be understood that other embodiments may fall within the scope of the disclosure as defined by the claims.

100: Electronic device processing system

114:EFEM

114B:EFEM body

114C:EFEM chamber

117:EFEM manipulator

120:Side storage compartment

121: Maintenance door

122:door

123: Supply baffle

124: Side storage container

125:Supply pipeline

126:Open your mouth

127:SSP shell

128:Recirculation catheter

132:Exhaust pipe

202:Substrate

204: Upper air chamber

205:Fan

208:Gas supply

210: Side storage chamber

212: Entrance

214:Part

216:Base

220: filter

222:Filter

224: Homogenizing plate

226: Container air chamber

227:Heater

Claims (15)

A side storage compartment, including: a first chamber; a first side storage container, the first side storage container is located in the first chamber, the first side storage container is configured to receive from an equipment front-end module one or more substrates, the first side storage container includes an opening configured to be adjacent to a first opening of the device front end module; a container air chamber, the container air chamber is connected to the first side the storage container is in fluid communication; and a first supply conduit coupled to the container plenum and configured to deliver a gas flow from an upper plenum into the container plenum. The side storage compartment of claim 1 further includes a first supply baffle, the first supply baffle is disposed between the container air chamber and the first side storage container. The side storage tank of claim 2, wherein the first supply baffle includes a plurality of openings configured to distribute a flushing gas flow delivered by the first supply pipe substantially uniformly throughout the first supply baffle. Side storage container. The side storage compartment of claim 1, wherein the first supply conduit is further coupleable to an external flushing gas supply. The side storage compartment of claim 1, further comprising: a second chamber; a second side storage container, the second side storage container is located in the second chamber, and the second side storage container is configured to One or more substrates are received from the equipment front-end module, the second side storage container includes an opening configured to be adjacent a second opening of the equipment front-end module; a second container plenum, the second container plenum is in fluid communication with the second side storage container; and a second supply conduit coupled to the second container plenum and configured to deliver a flow of gas from an upper plenum into the The second container air chamber. The side storage compartment as claimed in claim 5, further comprising a second supply baffle, the second supply baffle being disposed between the second container air chamber and the second side storage container, wherein the second supply baffle The plate includes a plurality of openings configured to distribute the flow of purge gas delivered by the second supply conduit substantially uniformly throughout the second side storage container. The side storage compartment of claim 5, wherein the second supply conduit is further coupleable to an external flushing gas supply. An electronic device processing component, including: a device front-end module, the device front-end module includes a device front-end A module chamber, the front-end module chamber of the device has one or more interface openings and an upper air chamber in fluid communication with the front-end module chamber of the device; one or more side storage compartments, the one or more A plurality of side storage compartments are coupled to a main body of the device front-end module. Each of the one or more side storage compartments includes: a first chamber; a first side storage container, the first side storage container Located in the first chamber, the first side storage container is configured to receive one or more substrates from the device front end module chamber, the first side storage container includes a first opening located at a first opening adjacent to the front end module chamber of the device; a first container air chamber in fluid communication with the first side storage container; and a first supply conduit, the first supply A conduit is coupled between the upper plenum and the first container plenum and is configured to deliver a flow of purge gas from the upper plenum into the first container plenum. The electronic device processing assembly of claim 8, further comprising a heater located in the upper air chamber, the heater configured to heat the flushing gas in the upper air chamber. The electronic device processing assembly of claim 8, further comprising a fan configured to draw flush gas from the device. The front-end module chamber and the first side storage container are recirculated into the upper air chamber. The electronic device processing assembly of claim 8, further comprising a first supply baffle disposed between the first container air chamber and the first side storage container. The electronic device processing assembly of claim 8, wherein the side storage compartment further includes: a second chamber; a second side storage container, the second side storage container is located in the second chamber, and the second side storage container is located in the second chamber. A side storage container is configured to receive one or more substrates from the equipment front-end module chamber, the second side storage container includes an opening configured to be adjacent to a first equipment front-end module chamber two openings; a second container air chamber, the second container air chamber is in fluid communication with the second side storage container; and a second supply pipe, the second supply pipe is between the upper air chamber and the second container air chamber coupled thereto and configured to deliver a flushing gas flow from the upper plenum into the second container plenum. A method of operating an equipment front-end module includes the following steps: providing an equipment front-end module having an upper air chamber and an equipment front-end module chamber in fluid communication with the upper air chamber, and One side storage compartment, the side storage compartment contains a side storage container; the flushing gas flows from the upper air chamber into the front module chamber of the device, and at the same time flows from the upper air chamber into the side located in the side storage compartment a storage container; exhausting the flushing gas from the side storage container into the equipment front-end module chamber; and recirculating at least a portion of the flushing gas from the equipment front-end module chamber into the upper air chamber. The method of claim 13, further comprising the step of flushing at least some of the flushing gas from the front-end module chamber of the device through an exhaust port. The method of claim 13, further comprising the step of filtering the flushing gas leaving the upper air chamber to the front-end module chamber of the device.