CN114724913A - Double-baffle device for improving etching uniformity - Google Patents
Double-baffle device for improving etching uniformity Download PDFInfo
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- CN114724913A CN114724913A CN202110002167.1A CN202110002167A CN114724913A CN 114724913 A CN114724913 A CN 114724913A CN 202110002167 A CN202110002167 A CN 202110002167A CN 114724913 A CN114724913 A CN 114724913A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
The invention discloses a double-baffle device for improving etching uniformity, which comprises a first baffle and a second baffle, wherein the first baffle and the second baffle are both arranged in an etching reaction cavity; the first baffle is a full-circle plate and can fully shield the ion beam generated by the ion source under the action of the first baffle driving device; the wafer is etched twice, wherein the first etching is etching without baffle shielding, and the second etching is etching shielded by a second baffle; the structure of the second baffle is selected according to the etching working condition, and the area with high etching rate on the surface of the wafer during one-time etching can be shielded under the action of the second baffle driving device, so that the etching rate on the surface of the wafer is kept consistent. The etching working conditions comprise a low-energy working condition, a medium-energy working condition and a high-energy working condition. According to the invention, through the matching etching of the two baffles, the integral etching uniformity of the finished wafer is improved, and the utilization rate of the wafer is increased.
Description
Technical Field
The invention relates to the field of ion beam etching, in particular to a double-baffle device for improving etching uniformity.
Background
The ion beam etching is to decompose argon into argon ions by utilizing a glow discharge principle, and the argon ions physically bombard the surface of a sample through the acceleration of an anode electric field so as to achieve the etching effect. The etching process is to fill Ar and other inert gases into an ion source discharge chamber, form plasma through ionization, transmit the plasma to a target substrate in the form of ion beams through a grid, and irradiate the ion beams to the surface of a solid to bombard atoms on the surface of the solid, so that the atoms of the material are sputtered, thereby achieving the purpose of etching. Ion beam etching can be widely used for etching various metals and alloys thereof, and non-metals, oxides, nitrides, carbides, semiconductors, polymers, ceramics, infrared, superconductors and other materials.
The ion beam etching uniformity mainly depends on the ion source performance, and as the RF ion source is cylindrical, when a radio frequency power supply is loaded on a radio frequency coil, current mainly flows in the wall of a discharge cavity due to the skin effect of the current and is gradually attenuated in a skin layer, the plasma density in the discharge cavity generally shows the tendency of high two sides and low middle. Under the influence of radio frequency power and working pressure, the plasma density distribution in the discharge cavity also has a saddle-shaped trend, and the etching rate is uneven due to the uneven plasma density distribution, so that the etching uniformity is influenced. As shown in fig. 1, when the ion source operates under a low-energy condition, the middle area of the etching rate of the wafer surface is larger than the edge area, the area with the higher etching rate gradually moves outwards as the gate-applied voltage increases, and when the ion source operates under a high-energy condition, the etching rate obviously shows that the edge area is larger than the center area. When calculating the sculpture homogeneity, current wafer generally is to calculating after cutting edge the wafer, how to practice thrift the cost, and the utilization ratio that increases the wafer is prime for the difficult problem of waiting to solve.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a double-baffle device for improving etching uniformity, which improves the overall etching uniformity of a wafer finished product and increases the utilization rate of the wafer by the matching etching of two baffles.
In order to solve the technical problems, the invention adopts the technical scheme that:
a double-baffle device for improving etching uniformity comprises a first baffle and a second baffle which are both arranged in an etching reaction cavity.
The first baffle is a full-circle plate and can fully shield the ion beam generated by the ion source under the action of the first baffle driving device.
The wafer is etched twice, wherein the first etching is etching without the shielding of the baffle plate, and the second etching is etching shielded by the second baffle plate.
The structure of the second baffle is selected according to the etching working condition, and the area with high etching rate on the surface of the wafer during one-time etching can be shielded under the action of the second baffle driving device, so that the etching rate on the surface of the wafer is kept consistent.
The etching working conditions comprise a low-energy working condition, a medium-energy working condition and a high-energy working condition.
When the etching working condition is a low-energy working condition, the second baffle plate comprises a central circular plate and a plurality of first fan-shaped blocks uniformly distributed along the circumferential direction of the central circular plate; the central circular plate is used for shielding a low-energy central area with a high etching rate on the surface of the wafer.
And a first fan-shaped gap is formed between every two adjacent first fan-shaped blocks, and assuming that the arc length of the first fan-shaped block is L1 and the arc length of the first fan-shaped gap is L2 at the radius r, L1 is less than L2, and the ratio of L1 to L2 is gradually reduced from inside to outside in the radial direction.
The second stop block further comprises a first connecting ring concentrically sleeved on the periphery of the central circular plate, and the first fan-shaped blocks are uniformly arranged between the central circular plate and the first connecting ring along the circumferential direction.
When the etching working condition is a medium-energy working condition, the second baffle comprises a connecting ring II and a plurality of fan-shaped blocks II; the second fan-shaped blocks are uniformly distributed on the inner side of the second connecting ring along the circumferential direction, and each second fan-shaped block is connected with the inner wall surface of the second connecting ring directly or through a connecting rib; a second fan-shaped gap is formed between two adjacent second fan-shaped blocks.
Assuming that the arc length of the second segment is L3 and the arc length of the second segment is L4 at the radius r, L3 > L4.
And the corner of each second fan-shaped block is an arc chamfer.
When the etching working condition is a high-energy working condition, the second baffle is a first annular plate.
When the etching working condition is a high-energy working condition, the second baffle comprises a second circular ring plate and inverted fan-shaped gaps evenly distributed along the circumferential direction of the second circular ring plate, and the arc length large ends of the inverted fan-shaped gaps face to the circular cavity of the second circular ring plate.
The invention has the following beneficial effects: according to the invention, the first baffle is used for primary etching, the second baffles with different structures are selected according to different etching working conditions, and secondary etching is carried out by using the second baffles, so that the integral etching uniformity of a finished wafer product is effectively improved, and the utilization rate of the wafer is increased.
Drawings
FIG. 1 is a schematic diagram showing uniformity of etching rate of a wafer surface under different etching conditions; fig. 1 (a), fig. 1 (b) and fig. 1 (c) show the uniformity of the etching rate of the wafer surface under the low-energy condition, the medium-energy condition and the high-energy condition, respectively.
FIG. 2 shows a schematic diagram of the overall structure of the ion etching system of the present invention.
FIG. 3 is a schematic diagram showing the states of two baffles when the wafer does not reach the etching position.
Fig. 4 is a schematic view showing the state of two baffles at the time of the first etching.
Fig. 5 is a schematic view showing the state of two baffles at the time of the second etching.
Fig. 6 shows a schematic structural view of the first baffle.
FIG. 7 shows a schematic structural view of a second baffle; FIGS. 7 (a) and 7 (b) are diagrams illustrating two examples of the second baffle under low energy conditions; FIGS. 7 (c) and 7 (d) show two examples of the second baffle in the middle energy condition; fig. 7 (e) and 7 (f) show two examples of the second baffle in the high energy condition.
FIG. 8 is a schematic view showing a state where two shutter plates are engaged to perform the second etching. FIGS. 8 (a) and 8 (b) show two examples of the fitting, respectively.
FIG. 9 is a schematic view showing a process of wafer etching with two baffles.
Among them are:
1. a first baffle plate;
2. a second baffle; 21a. a central circular plate; 21b, sector one; 21c, a fan-shaped gap I; 21d, connecting ring I;
22a, a connecting ring II; 22b, a second sector; 22c, a second fan-shaped gap; 22d, connecting ribs;
23a, a first annular plate; 23b, a second annular plate; 23c, an inverted fan-shaped gap;
3. a wafer;
31a, a low energy central region; 31b. low energy edge region; 32a. mid-energy central region; 32b. intermediate energy region; 32c. a mid-energy edge region; high energy central region 33 a; 33b. high energy edge region;
4. an electrode; 5. an ion source; 6. a second shutter driving device; 61. a first baffle plate driving device; 7. a second baffle limiting device; 71. a first baffle limiting device; 8. and etching the reaction cavity.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific preferred embodiments.
In the description of the present invention, it is to be understood that the terms "left side", "right side", "upper part", "lower part", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and that "first", "second", etc., do not represent an important degree of the component parts, and thus are not to be construed as limiting the present invention. The specific dimensions used in the present example are only for illustrating the technical solution and do not limit the scope of protection of the present invention.
As shown in fig. 2 to 5, a double barrier apparatus for improving etching uniformity includes a first barrier 1 and a second barrier 2 both installed in an etching reaction chamber 8.
As shown in fig. 6, the first baffle is a full-circle plate, and can completely shield the ion beam generated by the ion source under the action of the first baffle driving device 61 and the first baffle limiting device 71.
In the invention, the wafer is etched twice, wherein the first etching is etching without baffle shielding, and the second etching is etching shielded by a second baffle.
And when the etching uniformity meets the requirement after the primary etching, ending the etching. If the process requirement is not met, secondary etching is required.
When the wafer needs to be etched, plasma is generated in the ion source 5 and bombards the wafer 3 in the form of ion beams, and when the wafer 3 does not reach the process position yet, as shown in fig. 3, in order to avoid the damage of the ion beams to the wafer 3 and the electrode 4, the first baffle plate 1 shields the ion beams generated by the ion source 5 under the action of the first baffle plate driving device 61 and the first baffle plate limiting device 71. When the wafer 3 reaches the process position, as shown in fig. 4, the first baffle 1 falls down, the ion beam etches the surface of the wafer 3 until the first process is completed, and at this time, the ion beam generated by the ion source 5 is not uniform, which causes the etching of the whole wafer 3 to be non-uniform, and the second process is required to perform secondary etching on the non-uniform area.
As shown in fig. 5, the second baffle 2 partially shields the ion beam generated by the ion source 5 (i.e., shields the region with the fast etching rate on the surface of the wafer during the first etching) under the action of the second baffle driving device 6 and the second baffle limiting device 7, and etches the region with the slow etching rate during the first process (the first etching) for a short time until the uniformity of the whole wafer meets the requirement.
In order to avoid the pollution of the etching reaction chamber, the material of the first baffle plate 1 and the second baffle plate 2 is preferably graphite or molybdenum, etc.
In order to ensure that the first baffle 1 can completely shield the ion beam when the wafer 3 does not reach the process position, the first baffle 1 should be of an overall round structure, the diameter of the first baffle is at least 30% larger than the beam diameter of the Grid component in the ion source 5, and meanwhile, the baffle is ensured not to shield the ion beam when falling.
The structure of the second baffle is selected according to the etching working condition.
The etching working conditions comprise a low-energy working condition (Beamvoltage < 300V), a medium-energy working condition (300V < Beamvoltage < 600V) and a high-energy working condition (Beamvoltage > 600V).
When the process condition is a low energy condition (low beam voltage), as shown in fig. 1 (a), after the first process is completed, the etching rate of the wafer surface is such that the low energy central region 31a is larger than the low energy edge region 31b, and the etching rate gradually decreases along the radial direction.
At this time, in the second process, the second baffle 2 should shield the low energy central region 31a to avoid excessive etching of the low energy central region 31a of the wafer 3 by the ion beam, and for the low energy edge region 31b, the shielding region of the second baffle should be gradually reduced from inside to outside, as shown in fig. 7 (a) and 7 (b).
Example 1
In fig. 7 (a), the second shutter includes a center circular plate 21a and a plurality of fan-shaped segments 21b uniformly arranged in a circumferential direction of the center circular plate.
The central disk is used for shielding the low-energy central region 31a with high etching rate on the surface of the wafer, so that the area of the central disk is 4/5-1 (considering the divergence angle) of the area of the low-energy central region 31a.
A fan-shaped gap 21c is formed between two adjacent fan-shaped blocks 21b.
In the present embodiment, the first segment 21b is preferably three.
Assuming that at the radius r, the arc length of the first segment is L1, and the arc length of the first segment gap is L2, L1 < L2, and the ratio of L1 to L2 gradually decreases from the inside to the outside in the radial direction.
The maximum outer diameter of the second baffle (i.e., the outer diameter of sector one) is preferably 1.5 times or more the outer diameter of the wafer.
Example 2
In fig. 7 (b), the second shutter includes a central circular plate 21a, a plurality of segments one 21b, and a coupling ring one 21d.
In the present embodiment, the first segment 21b is preferably three, but may be another number.
The first connecting ring 21d is concentrically disposed around the center disk 21a, which preferably has the same area as the low energy center area 31a.
The first fan-shaped blocks are uniformly arranged between the central circular plate and the first connecting ring along the circumferential direction.
When the process condition is the medium energy condition (medium beam voltage), as shown in fig. 1 (b), after the first process is finished, the etching rate of the surface of the wafer 3 is that the etching rate of the medium energy central region 32a and the medium energy edge region 32c are both low, and the etching rate of the medium energy central region 32b is high. Therefore, under the intermediate energy process conditions, the second baffle 2 should perform a secondary etching on the intermediate energy central region 32a and the intermediate energy edge region 32c, and two preferred patterns shown in fig. 7 (c) and 7 (d) can be selected for the baffle.
Example 1
As shown in fig. 7 (c), the second baffle includes a connecting ring two 22a and a plurality of segment two 22b.
The inner diameter of the connecting ring II is preferably larger than the outer diameter of the middle energy edge area 32c, so that the middle energy edge area 32c is prevented from being shielded.
In this embodiment, the second segment 22b is preferably three. The second fan-shaped blocks are uniformly distributed on the inner side of the second connecting ring along the circumferential direction, and each second fan-shaped block and the inner wall surface of the second connecting ring are integrally arranged; a second fan-shaped gap 22c is formed between two adjacent second fan-shaped blocks.
The corners of each second fan-shaped block are preferably provided with arc chamfers, so that the inner arc and the outer arc of each second fan-shaped block are basically equivalent, the arc length of the outer arc of the second fan-shaped gap is enlarged, shielding of the edge area 32c of the centering energy can be reduced as much as possible, and secondary etching is facilitated.
Assuming that the arc length of the second segment is L3 and the arc length of the second segment is L4 at the radius r, L3 > L4.
The inner diameter of the second segment 22b preferably corresponds to the inner diameter of the intermediate energy region 32b for maximum shielding of the ion beam in the intermediate energy region 32b.
The center cavity in the second segment 22b preferably corresponds in area to the mid-energy central region 32a, thereby performing a second etch of the mid-energy central region 32a.
Example 2
As shown in fig. 7 (d), the second baffle includes a connecting ring two 22a and a plurality of segment two 22b.
In this embodiment, the second segment 22b is preferably three. The second fan-shaped blocks are uniformly distributed on the inner side of the second connecting ring along the circumferential direction, and each second fan-shaped block is preferably connected with the inner wall surface of the second connecting ring through a thin strip-shaped connecting rib 22d.
The radial position of the connecting ribs preferably corresponds to the intermediate energy edge region 32c and the radial length is preferably the same as the intermediate energy edge region 32c. The axial length of the connecting rib is as small as possible, so that the annular gap where the connecting rib is located is as large as possible, the ion beam for performing secondary etching on the centering energy edge area 32c is the largest, and the etching effect is good.
A second fan-shaped gap 22c is formed between two adjacent second fan-shaped blocks. The second sector gap and the second sector block 22b are arranged in a manner of an inner circular center cavity, as shown in example 1.
When the process condition is under the high energy condition (high beam voltage), as shown in fig. 1 (c), after the first process is finished, the etching rate of the surface of the wafer 3 is the fastest from the high energy edge region 33b, and gradually decreases from the high energy edge region to the high energy center region 33a. Therefore, the second shutter 2 may be selected from the patterns shown in fig. 7 (e) and 7 (f), and the central area is etched a second time.
As shown in fig. 7 (e), the second baffle includes a second annular plate 23b and inverted fan-shaped gaps 23c uniformly distributed along the circumferential direction of the second annular plate, and the large arc length ends of the inverted fan-shaped gaps face the circular cavity of the second annular plate.
Example 2
As shown in fig. 7 (f), the second baffle is a first annular plate.
In the second process, besides the independent utilization of the second baffle 2, the first baffle 1 and the second baffle 2 can be combined to work according to the conditions so as to meet the requirement of etching uniformity. Utilize two baffles to shelter from, can carry out the sculpture to more circumstances to satisfy whole sculpture homogeneity demand.
As shown in fig. 8 (a), when the etching rate of the edge region is relatively slow, in the second process, the first baffle plate 1 can act alone to shield the plasma density of other regions and only etch the edge, so as to satisfy the overall etching uniformity.
As shown in fig. 8 (b), when the etching rate is faster in the edge and center regions and slower in the middle of the ring-shaped region, the ring-shaped region may be etched twice using two baffles (see the shaded area).
The invention utilizes the second baffle 2 to carry out secondary etching, can improve the integral etching uniformity of the finished product of the wafer, and increases the utilization rate of the wafer.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the embodiments, and various equivalent modifications can be made within the technical spirit of the present invention, and the scope of the present invention is also within the scope of the present invention.
Claims (10)
1. The utility model provides an improve two baffle devices of sculpture homogeneity which characterized in that: the etching reaction chamber comprises a first baffle and a second baffle which are both arranged in the etching reaction chamber;
the first baffle is a full-circle plate and can fully shield the ion beam generated by the ion source under the action of the first baffle driving device;
the wafer is etched twice, wherein the first etching is etching without baffle shielding, and the second etching is etching shielded by a second baffle;
the structure of the second baffle is selected according to the etching working condition, and the area with high etching rate on the surface of the wafer during one-time etching can be shielded under the action of the second baffle driving device, so that the etching rate on the surface of the wafer is kept consistent.
2. The dual barrier device for improving etching uniformity of claim 1, wherein: the etching working conditions comprise a low-energy working condition, a medium-energy working condition and a high-energy working condition.
3. The dual barrier device for improving etching uniformity of claim 2, wherein: when the etching working condition is a low-energy working condition, the second baffle plate comprises a central circular plate and a plurality of first fan-shaped blocks which are uniformly distributed along the circumferential direction of the central circular plate; the central circular plate is used for shielding a low-energy central area with a high etching rate on the surface of the wafer.
4. The dual barrier device for improving etching uniformity of claim 3, wherein: and a first fan-shaped gap is formed between every two adjacent first fan-shaped blocks, and assuming that the arc length of the first fan-shaped block is L1 and the arc length of the first fan-shaped gap is L2 at the radius r, L1 is less than L2, and the ratio of L1 to L2 is gradually reduced from inside to outside in the radial direction.
5. The dual barrier device for improving etching uniformity of claim 3, wherein: the second blocking block further comprises a first connecting ring concentrically sleeved on the periphery of the central circular plate, and the fan-shaped blocks are uniformly arranged between the central circular plate and the first connecting ring along the circumferential direction.
6. The dual barrier device for improving etching uniformity of claim 1, wherein: when the etching working condition is a medium-energy working condition, the second baffle comprises a connecting ring II and a plurality of fan-shaped blocks II; the fan-shaped blocks II are uniformly distributed on the inner side of the connecting ring II along the circumferential direction, and each fan-shaped block II is connected with the inner wall surface of the connecting ring II directly or through a connecting rib; a second fan-shaped gap is formed between two adjacent second fan-shaped blocks.
7. The dual barrier device for improving etching uniformity of claim 6, wherein: assuming that the arc length of the second segment is L3 and the arc length of the second segment is L4 at the radius r, L3 > L4.
8. The dual barrier device for improving etching uniformity of claim 6, wherein: and the corner of each second fan-shaped block is an arc chamfer.
9. The dual barrier device for improving etching uniformity of claim 1, wherein: when the etching working condition is a high-energy working condition, the second baffle is a first annular plate.
10. The dual barrier device for improving etching uniformity of claim 1, wherein: when the etching working condition is a high-energy working condition, the second baffle comprises a second circular ring plate and inverted fan-shaped gaps evenly distributed along the circumferential direction of the second circular ring plate, and the arc length large ends of the inverted fan-shaped gaps face to the circular cavity of the second circular ring plate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110002167.1A CN114724913A (en) | 2021-01-04 | 2021-01-04 | Double-baffle device for improving etching uniformity |
| PCT/CN2021/137436 WO2022143121A1 (en) | 2021-01-04 | 2021-12-13 | Dual-baffle device for improving etching uniformity |
| KR1020237023600A KR20230118172A (en) | 2021-01-04 | 2021-12-13 | Double baffle device with improved etching uniformity |
| TW110146799A TWI819432B (en) | 2021-01-04 | 2021-12-14 | A double-baffle device for improving a uniformity of etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110002167.1A CN114724913A (en) | 2021-01-04 | 2021-01-04 | Double-baffle device for improving etching uniformity |
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| CN114724913A true CN114724913A (en) | 2022-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110002167.1A Pending CN114724913A (en) | 2021-01-04 | 2021-01-04 | Double-baffle device for improving etching uniformity |
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| Country | Link |
|---|---|
| KR (1) | KR20230118172A (en) |
| CN (1) | CN114724913A (en) |
| TW (1) | TWI819432B (en) |
| WO (1) | WO2022143121A1 (en) |
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| CN116623184A (en) * | 2023-07-19 | 2023-08-22 | 西安精谐科技有限责任公司 | Ion beam etching tool and ion beam etching trimming method for hemispherical harmonic oscillator |
| CN116779412A (en) * | 2023-08-25 | 2023-09-19 | 江苏鲁汶仪器股份有限公司 | Ion source baffle device and ion beam etching machine |
| CN116959947A (en) * | 2023-09-21 | 2023-10-27 | 青禾晶元(天津)半导体材料有限公司 | Plasma etching device and method for etching carbon film |
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| US9095038B2 (en) * | 2011-10-19 | 2015-07-28 | Advanced Micro-Fabrication Equipment, Inc. Asia | ICP source design for plasma uniformity and efficiency enhancement |
| US10049862B2 (en) * | 2015-04-17 | 2018-08-14 | Lam Research Corporation | Chamber with vertical support stem for symmetric conductance and RF delivery |
| CN207503916U (en) * | 2017-07-21 | 2018-06-15 | 武汉新芯集成电路制造有限公司 | A kind of radical occlusion device and etching machine bench |
| US11615946B2 (en) * | 2018-07-31 | 2023-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Baffle plate for controlling wafer uniformity and methods for making the same |
| US11749537B2 (en) * | 2018-10-26 | 2023-09-05 | Applied Materials, Inc. | Side storage pods, equipment front end modules, and methods for operating equipment front end modules |
| CN109935513B (en) * | 2019-03-29 | 2021-08-06 | 江苏鲁汶仪器有限公司 | Ion beam etching system |
| CN110047724B (en) * | 2019-04-22 | 2021-07-27 | 江苏鲁汶仪器有限公司 | Double-layer baffle for ion beam etching |
| CN110571120B (en) * | 2019-09-17 | 2022-09-02 | 江苏鲁汶仪器有限公司 | Ion source etching chamber with cleaning equipment and ion beam cleaning method |
| CN211208386U (en) * | 2019-11-29 | 2020-08-07 | 长春百纳光电子产品有限公司 | Correcting device for ion beam processing |
| CN211062693U (en) * | 2019-12-05 | 2020-07-21 | 德淮半导体有限公司 | Etching equipment |
-
2021
- 2021-01-04 CN CN202110002167.1A patent/CN114724913A/en active Pending
- 2021-12-13 WO PCT/CN2021/137436 patent/WO2022143121A1/en active Application Filing
- 2021-12-13 KR KR1020237023600A patent/KR20230118172A/en unknown
- 2021-12-14 TW TW110146799A patent/TWI819432B/en active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116623184A (en) * | 2023-07-19 | 2023-08-22 | 西安精谐科技有限责任公司 | Ion beam etching tool and ion beam etching trimming method for hemispherical harmonic oscillator |
| CN116779412A (en) * | 2023-08-25 | 2023-09-19 | 江苏鲁汶仪器股份有限公司 | Ion source baffle device and ion beam etching machine |
| CN116779412B (en) * | 2023-08-25 | 2023-11-24 | 江苏鲁汶仪器股份有限公司 | Ion source baffle device and ion beam etching machine |
| CN116959947A (en) * | 2023-09-21 | 2023-10-27 | 青禾晶元(天津)半导体材料有限公司 | Plasma etching device and method for etching carbon film |
| CN116959947B (en) * | 2023-09-21 | 2023-12-08 | 青禾晶元(天津)半导体材料有限公司 | Plasma etching device and method for etching carbon film |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022143121A1 (en) | 2022-07-07 |
| TWI819432B (en) | 2023-10-21 |
| KR20230118172A (en) | 2023-08-10 |
| TW202228179A (en) | 2022-07-16 |
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