CN109935513B - Ion beam etching system - Google Patents
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- CN109935513B CN109935513B CN201910252699.3A CN201910252699A CN109935513B CN 109935513 B CN109935513 B CN 109935513B CN 201910252699 A CN201910252699 A CN 201910252699A CN 109935513 B CN109935513 B CN 109935513B
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Abstract
The invention discloses an ion beam etching system which comprises a reaction cavity, a slide holder, an ion source, a baffle and a baffle driving device, wherein the baffle comprises a connecting part and a shielding part, the connecting part is connected with the baffle driving device, the baffle rotates around a driving axis between an upper limit position and a lower limit position under the action of the baffle driving device, the driving axis is approximately parallel to a first direction, the shielding part is arranged between a grid mesh of the ion source and the slide holder, when the baffle is positioned at the upper limit position, an ion beam is emitted to the surface of the shielding part from the grid mesh of the ion source, and baffle materials sputtered by the ion beam are reflected to a region outside the grid mesh of the ion source by the shielding part. The invention greatly reduces the quantity of baffle materials sputtered by the ion beam entering the ion source, reduces the damage to the insulating cylinder and the ion source grid of the ion source, and improves the stability and the reliability of the device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an ion beam etching system.
Background
With the development of semiconductor devices, the pattern precision of chips is higher and higher, and the conventional wet etching cannot meet the requirement of high-precision fine line pattern etching due to unavoidable lateral underetching, so a series of dry etching technologies are gradually developed. The application is more common plasma etching, reactive ion etching, two-pole sputtering etching and ion beam etching. The plasma etching and the reactive ion etching can not be separated from each other, different reactive gases and components are needed for etching different materials, and different excitation modes and excitation conditions are needed. The reactive gases are typically chlorides or fluorides, and there are also materials for which it is difficult to find suitable reactive gases, such as bipolar sputter etching or ion beam etching, where Pt is often purely physical. The ion beam etching is to provide ions by an ion source, the ion energy is low, the density is high, the damage to the substrate is small, and the etching speed is high. Because the ion beam etching has no selectivity to materials, the ion beam etching method is particularly suitable for thinning materials which are difficult to thin by chemical grinding and dielectric grinding. The ion beam etching is anisotropic etching, so that the pattern transfer precision is high and the line width loss of the fine lines is small. The ion beam etching only uses argon, does not need reaction gas, has safe process, small environmental pollution and low running cost, and is particularly suitable for the material which is difficult to etch by adopting a chemical method and the precise ultra-thin film etching.
In the manufacturing processes of semiconductor devices, chips, and the like, an etching process is most frequently used and occurs among many processes. Some materials on the chip are partially or completely etched or removed during the etching process in IC manufacturing. Among all etching processes, plasma etching and Ion Beam Etching (IBE) processes are more and more important, and especially, as the integration of chips is improved, the critical dimension is reduced, the process requirements such as high selectivity and accurate pattern transfer are improved, the advantages of plasma etching and ion beam etching are more prominent.
As chip key structures are shifted from a plane to a 3D structure (such as a FinFET structure in a logic device), an advanced memory structure (such as a Magnetic Random Access Memory (MRAM) and a Resistive Random Access Memory (RRAM), the requirements of the device structures on the accuracy, the repeatability and the process quality of an etching process are higher and higher, meanwhile, in the manufacturing process of the MRAM devices, a plurality of special metal materials and metal compound materials need to be etched, meanwhile, etching reaction byproducts generated in the plasma etching process are mostly metal or metal-rich thin films, and the side wall of a pattern after a part of the etching process is not sharp and needs to be processed for supplementing and modifying, through experimental observation, the ion sputtering in the ion beam etching process can greatly improve the three problems A modified form of ion beam etching system addresses these problems encountered during fabrication of advanced devices.
In an ion beam etching system, in order to prevent damage to the wafer and the electrode by the ion beam when the wafer has not reached the processing position, a baffle plate is disposed between the ion source and the stage on which the wafer is placed. The ion beam baffle in the existing ion beam etching system adopts flat plate shielding, which is equivalent to the parallel shape of the baffle and the grid of the ion source. Due to the limitation of the cavity space, the distance between the baffle and the ion source grid is relatively short, as shown in fig. 1, in the system, when the baffle is in a shielding state, the ion beam emitted by the ion source is accelerated by the ion source grid and then vertically emitted to the surface of the baffle 100 along the direction 10, the ion beam bombards the baffle material after contacting the baffle 100, a plurality of baffle material particles bombarded and sputtered by bombardment are reflected back to the insulating cylinder in the ion source along the direction 20, react with the material in the insulating cylinder and deposit on the inner surface of the insulating cylinder to form a layer of grey brown substance, and the deposition of the substance may cause the gradual accumulation of the energy in the ion source, so that the insulating cylinder gradually becomes opaque in the use process, and the inner wall of the insulating cylinder forms a conductive layer, which causes the breakage of the insulating cylinder due to the long-time accumulation. Meanwhile, the reflected material rebounds to the ion source grid mesh to easily cause conductive grounding, so that the ion source grid mesh is damaged.
Disclosure of Invention
In order to solve the problems, the invention discloses an ion beam etching system which comprises a reaction cavity, a slide holder, an ion source, a baffle and a baffle driving device, wherein the baffle comprises a connecting part and a shielding part, the connecting part is connected with the baffle driving device, the baffle rotates around a driving axis between an upper limit position and a lower limit position under the action of the baffle driving device, and the driving axis is approximately parallel to a first direction. The shielding part is arranged between the grid mesh of the ion source and the slide holder, when the baffle plate is positioned at the upper limit position, the ion beam is emitted to the surface of the shielding part from the grid mesh of the ion source, and the shielding part reflects the baffle plate material sputtered by the ion beam to the area outside the grid mesh of the ion source.
In the ion beam etching system of the present invention, preferably, at least one surface of the shielding portion is an inclined surface, the inclined surface is inclined in a direction away from the ion source, an included angle with a second direction is an acute angle, and the second direction is substantially perpendicular to the first direction.
In the ion beam etching system of the present invention, preferably, the shielding portion includes only a first inclined plane, and an included angle between the first inclined plane and the second direction is 15 ° to 60 °.
In the ion beam etching system of the present invention, preferably, the shielding portion includes a second inclined surface and a third inclined surface, a connection point of the second inclined surface and the third inclined surface is located on a central axis of the ion source, and the central axis of the ion source is substantially parallel to the first direction.
In the ion beam etching system of the present invention, preferably, an included angle between the second inclined plane and the second direction is 30 ° to 75 °, and an included angle between the third inclined plane and the second direction is 30 ° to 75 °.
In the ion beam etching system of the present invention, preferably, the second inclined plane and the third inclined plane are symmetrically arranged with a central axis of the ion source as a symmetry axis.
In the ion beam etching system of the present invention, preferably, a side of the shielding portion facing the grid of the ion source is spherical, and a center line of the spherical surface coincides with a central axis of the ion source.
In the ion beam etching system of the present invention, preferably, the baffle is made of graphite, carbon fiber or molybdenum.
In the ion beam etching system of the present invention, preferably, the size of the shielding portion is 20 to 50mm larger than the size of the grid of the ion source.
In the ion beam etching system, preferably, the thickness of the baffle plate is between 2 and 6 mm.
The invention can greatly reduce the amount of baffle materials sputtered by the ion beam entering the ion source, reduce the damage to the insulating cylinder and the ion source grid of the ion source, and improve the stability and the reliability of the equipment.
Drawings
Fig. 1 is a schematic diagram of a baffle of a prior art ion beam etching system.
Fig. 2 is a schematic diagram of the operating state of the ion beam etching system of the present invention.
Fig. 3 is a schematic diagram of a baffle of an ion beam etching system according to a first embodiment of the invention.
Fig. 4 is a schematic diagram of a second embodiment of a baffle plate of an ion beam etching system of the present invention.
Fig. 5 is a schematic diagram of a third embodiment of a baffle plate of an ion beam etching system of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
Fig. 2 is a schematic diagram of the operation of the ion beam etching system of the present invention. The ion beam etching system comprises a reaction cavity 1, a rotatable slide holder 2, an ion source 6, an external fixed cover 8 for fixing the ion source, a baffle 4 and a baffle driving device 5. The reaction cavity 1 is a polyhedral structure with hollow characteristics, and a rectangular opening is formed in one side wall. The size of the rectangular opening is in accordance with the certified semiconductor semi 2 standard, which is adjusted according to the wafer to which the system is applied. The opening can be used for a mechanical arm to bear a wafer to enter the reaction chamber, after the wafer is placed on the etching slide holder, the mechanical arm withdraws from the opening, and a door valve installed outside is closed, so that the inside of the reaction chamber becomes a closed vacuum state. The slide holder 2 is located in the middle of the reaction cavity 1 and is L-shaped, the top of the slide holder is connected to the outside of the reaction cavity, and the slide holder 2 can rotate around the axis of the top connecting joint through a motor or other driving mechanisms. According to the process requirements, when an etching process is carried out, the slide holder 2 is arranged at an angle position, the ion source is started to release ion beams, and the wafer 3 placed on the slide holder 2 is etched.
As shown in fig. 3 to 5, the shutter 4 includes a connecting portion 41 and a shielding portion 42. The link 41 is connected to the shutter drive device 5, and the shutter 4 is rotated between upper and lower limit positions about a drive axis, which is substantially parallel to the X direction (also referred to as a first direction), by the shutter drive device 5. The shielding part 42 is arranged between the grid 7 of the ion source and the slide holder 2. Before the slide holder 2 and the wafer 3 do not reach the set position, the baffle is located at the upper limit position and is in a shielding state, and the baffle is blocked between the grid 7 of the ion source and the slide holder 2 to protect the slide holder 2 and the wafer 3 and prevent the slide holder 2 and the wafer 3 from being damaged by the ion beams so as to influence the quality of finished products. In order to solve the above-mentioned problems in the prior art, in some embodiments of the present invention, at least one face of the shielding portion is designed as an inclined face which is inclined in a direction away from the ion source and makes an acute angle with the Y direction (also referred to as a second direction). The X direction is substantially perpendicular to the Y direction. In other embodiments, the side of the shielding portion 42 facing the grid of the ion source may be designed to be spherical, and the center line of the spherical surface coincides with the central axis of the ion source. The above-designed baffle plate can reflect the baffle plate material sputtered by the ion beam to the region outside the grid mesh of the ion source when the ion beam is emitted from the grid mesh of the ion source to the surface of the shielding portion. The quantity of baffle materials sputtered by the ion beam entering the ion source is greatly reduced, the damage to an insulating cylinder and an ion source grid of the ion source is reduced, and the stability and the reliability of the device are improved.
When the slide holder 2 and the wafer 3 reach the set etching position, the baffle driving device 5 drives the baffle 4 to rotate downwards to leave the grid 7 port of the ion source, the ion beam emitted by the ion source collides with the surface of the wafer 3 at a certain speed, and the uncovered material on the surface of the wafer is collided out, so that the etching effect is realized. The ion beam is emitted from an ion source 6, as shown in fig. 1, accelerated through a grid 7 of the ion source, and impacts wafer 3 in direction 50.
Some baffle embodiments
Fig. 3 is a schematic diagram of a baffle of an ion beam etching system according to a first embodiment of the invention. As shown in fig. 3, the shielding portion 42 of the baffle 4 is inclined in a direction away from the ion source, i.e. the shielding portion is not parallel to the grid 7 of the ion source, but is at an angle. Preferably, the angle α between the shielding portion and the Y direction is acute. Further preferably, the included angle α is between 15 ° and 60 °. When the ion beam is emitted from the grid 7 of the ion source and strikes the surface of the shutter 42 in the direction 50, due to the angle α, a portion of the baffle material sputtered by the ion beam is reflected along the path 52 to an area outside the grid 7 of the ion source, such as the interior of the reaction chamber. The quantity of baffle materials sputtered by the ion beam entering the ion source is greatly reduced, the damage to an insulating cylinder and an ion source grid of the ion source is reduced, and the stability and the reliability of the device are improved. On the premise of not influencing the rotation of a slide holder in the equipment, the larger the angle alpha is, the less the baffle material which is reflected to the ion source and is sputtered by the ion beam is, and the better the protection effect on the ion source is.
Fig. 4 is a schematic diagram of a second embodiment of a baffle plate of an ion beam etching system of the present invention. As shown in fig. 4, the shielding portion 42 includes the second inclined surface 43 and the third inclined surface 44, and a connection point of the second inclined surface 43 and the third inclined surface 44 is located on a central axis 500 of the ion source, and the central axis 500 of the ion source is substantially parallel to the X direction. Preferably, the included angle β between the second inclined surface 43 and the Y direction is 30 ° to 75 °, and the included angle γ between the third inclined surface 44 and the Y direction is 30 ° to 75 °. The included angle between the second inclined surface 43 and the Y direction and the included angle between the third inclined surface 44 and the Y direction may be the same or different. As a preferable example, the second inclined surface 43 and the third inclined surface 44 are provided symmetrically with respect to the central axis 500 of the ion source as a symmetry axis.
When the ion beam is emitted from the grid 7 of the ion source and strikes the surface of the second inclined surface 43 in the direction 50, the baffle material sputtered by the ion beam is reflected along the path 53 above the grid 7 of the ion source. When the ion beam is emitted from the grid 7 of the ion source and strikes the surface of the third inclined surface 44 in the direction 50, the baffle material sputtered by the ion beam is reflected along the path 54 below the grid 7 of the ion source. The structural design can reduce the reflection of almost all baffle materials sputtered by the ion beams to the inside of the ion source when the high-density ion beams are emitted, and protect an insulating cylinder and an ion source grid mesh in the ion source from being damaged. On the premise of not influencing the rotation of the slide holder in the equipment, the larger the angles gamma and beta are, the less the baffle material which is reflected to the ion source and is sputtered by the ion beam is, and the better the protection effect on the ion source is.
Fig. 5 is a schematic diagram of a third embodiment of a baffle plate of an ion beam etching system of the present invention. As shown in fig. 5, the side of the shielding portion 42 of the baffle plate 4 facing the grid of the ion source is spherical, and the center line of the spherical surface coincides with the central axis of the ion source. The inclination angle between the top end of the upper half part of the spherical surface and the Y direction is delta, preferably, the inclination angle is more than or equal to 15 degrees and less than or equal to 90 degrees, the inclination angle between the bottom end of the lower half part of the spherical surface and the Y direction is epsilon, preferably, the inclination angle is more than or equal to 15 degrees and less than or equal to 90 degrees. The ion beam emitted from the ion source 6 through the grid 7 is directed to the spherical surface of the mask 42 along the path 50, the material sputtered from the upper half of the mask is emitted obliquely upward, and the material sputtered from the lower half of the mask is emitted obliquely downward. The structure design can effectively reduce the probability of the baffle material sputtered by the ion beam to reflect to the inside of the ion source when the high-density ion beam emits, and protects the insulating cylinder in the ion source and the grid mesh of the ion source from being damaged. The radius of the spherical surface of the shielding portion 42 is R, and the smaller the size of R is, the less material sputtered by the baffle reaches the surface of the grid on the premise that the distance between the baffle and the sub-source grid is constant and all the ion beams emitted from the grid are shielded.
In any of the above embodiments, the baffle is made of graphite, carbon fiber or molybdenum. Preferably, the size of the shielding part is 20-50 mm larger than that of the grid of the ion source. Preferably, the thickness of the baffle is between 2 and 6 mm.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (8)
1. An ion beam etching system comprises a reaction cavity, a slide holder, an ion source, a baffle and a baffle driving device, and is characterized in that,
the baffle plate comprises a connecting part and a shielding part,
the connecting part is connected with the baffle driving device, the baffle rotates around a driving axis between an upper limit position and a lower limit position under the action of the baffle driving device, the driving axis is approximately parallel to the first direction,
the shielding part is arranged between the grid mesh of the ion source and the slide holder, when the baffle plate is positioned at the upper limit position, the ion beam is emitted from the grid mesh of the ion source to the surface of the shielding part, the shielding part reflects the baffle plate material sputtered by the ion beam to the area outside the grid mesh of the ion source,
at least one surface of the shielding part is an inclined surface, the inclined surface inclines towards the direction far away from the ion source, the included angle between the inclined surface and a second direction is an acute angle, and the second direction is approximately vertical to the first direction;
or one side of the shielding part facing the grid mesh of the ion source is spherical, and the central line of the spherical surface is superposed with the central axis of the ion source.
2. The ion beam etching system of claim 1,
the shielding part only comprises a first inclined plane, and an included angle of 15-60 degrees is formed between the first inclined plane and the second direction.
3. The ion beam etching system of claim 1,
the shielding part comprises a second inclined surface and a third inclined surface, the connection position of the second inclined surface and the third inclined surface is located on the central axis of the ion source, and the central axis of the ion source is approximately parallel to the first direction.
4. The ion beam etching system of claim 3,
the included angle between the second inclined plane and the second direction is 30-75 degrees, and the included angle between the third inclined plane and the second direction is 30-75 degrees.
5. The ion beam etching system of claim 3,
the second inclined plane and the third inclined plane are symmetrically arranged by taking the central axis of the ion source as a symmetry axis.
6. The ion beam etching system of any one of claims 1 to 5,
the baffle is made of graphite, carbon fiber or molybdenum.
7. The ion beam etching system of any one of claims 1 to 5,
the size of the shielding part is 20-50 mm larger than that of the grid mesh of the ion source.
8. The ion beam etching system of any one of claims 1 to 5,
the thickness of the baffle is between 2 mm and 6 mm.
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| CN201910252699.3A CN109935513B (en) | 2019-03-29 | 2019-03-29 | Ion beam etching system |
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| CN109935513B true CN109935513B (en) | 2021-08-06 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110491758A (en) * | 2019-08-14 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of the ion beam etching chamber and processing method of assembly cleaning liner |
| CN110571121B (en) * | 2019-09-17 | 2022-08-26 | 江苏鲁汶仪器有限公司 | Ion beam etching device and method for self-cleaning by adopting remote plasma |
| CN110571120B (en) * | 2019-09-17 | 2022-09-02 | 江苏鲁汶仪器有限公司 | Ion source etching chamber with cleaning equipment and ion beam cleaning method |
| CN110643954B (en) * | 2019-10-21 | 2024-03-01 | 上海新柯隆真空设备制造有限公司 | Coating equipment, ion source and grid structure |
| CN111341632B (en) * | 2020-03-02 | 2023-03-14 | 京东方科技集团股份有限公司 | Carbon plate structure, analysis magnetic field and ion implantation equipment |
| CN114724913A (en) * | 2021-01-04 | 2022-07-08 | 江苏鲁汶仪器有限公司 | Double-baffle device for improving etching uniformity |
| CN114724914A (en) * | 2021-01-04 | 2022-07-08 | 江苏鲁汶仪器有限公司 | Plasma density control system and method |
| CN115672874A (en) * | 2021-07-30 | 2023-02-03 | 江苏鲁汶仪器股份有限公司 | Plasma processing method |
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| CN109524285A (en) * | 2017-09-19 | 2019-03-26 | 中国电子科技集团公司第四十八研究所 | A kind of ion beam etching equipment |
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| US20080264340A1 (en) * | 2004-04-12 | 2008-10-30 | Novellus Systems, Inc. | Moving interleaved sputter chamber shields |
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| CN102138198A (en) * | 2008-08-28 | 2011-07-27 | 应用材料公司 | Process kit shield and method of use thereof |
| CN109473331A (en) * | 2017-09-08 | 2019-03-15 | 北京北方华创微电子装备有限公司 | Cavity shield device and semiconductor processing chamber |
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