CN109935513A - A kind of ion beam etching system - Google Patents
A kind of ion beam etching system Download PDFInfo
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- CN109935513A CN109935513A CN201910252699.3A CN201910252699A CN109935513A CN 109935513 A CN109935513 A CN 109935513A CN 201910252699 A CN201910252699 A CN 201910252699A CN 109935513 A CN109935513 A CN 109935513A
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- ion source
- ion beam
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- occlusion part
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Abstract
The present invention discloses a kind of ion beam etching system, including reaction cavity, slide holder, ion source, baffle and Baffle drive device, the baffle includes interconnecting piece and occlusion part, the interconnecting piece is connected with the Baffle drive device, the baffle is rotated between upper and lower two extreme positions under the action of the Baffle drive device around driving axis, the driving axis and first direction are substantially parallel, the occlusion part is set between the aperture plate of the ion source and the slide holder, when the baffle is located at upper limit position, ion beam emits from the aperture plate of ion source to the surface of occlusion part, the barrier material come out by ion beam sputtering is reflected into the region other than the aperture plate of ion source by the occlusion part.Reducing for high degree of the present invention enters quantity inside ion source by the barrier material that ion beam sputtering comes out, and reduces the damage to the insulating cylinder and ion source aperture plate of ion source, improves the stability and reliability of equipment.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of ion beam etching system.
Background technique
With the development of semiconductor devices, graphics chip precision is higher and higher, and conventional wet etching is due to being difficult to avoid that
Lateral undercutting, be no longer satisfied the requirement of high-precision hachure pattern etching, then gradually developed a series of dry method and carved
Erosion technology.There are plasma etching, reactive ion etching, diode sputtering etching, ion beam etching using commonplace.Plasma
Etching and reactive ion etching all be unable to do without reaction gas, and etching different materials need different reaction gas and component, need
Different energisation modes and excitation condition.Reaction gas is usually chloride or fluoride, and it is suitable that material also is difficult to find
Reaction gas, as Pt often using pure physical action diode sputtering etching or ion beam etching.Ion beam etching be by
One ion source provides ion, and ion energy low-density is big, and small to substrate damage, etch rate is fast.Due to ion beam etching pair
Material non-selectivity, being situated between to grind especially suitable for some pairs of chemical grindings, electricity is difficult to being thinned for thinned material.Ion beam etching
It is anisotropic etch, so pattern transfer precision is high, the line width loss of hachure is small.Ion beam etching only uses argon gas, is not required to
Reaction gas is wanted, process safety, environmental pollution is small, and operating cost is low, is particularly suitable for being difficult to etch using chemical method
Material and the ultrathin membrane of precision etching.
In the manufacturing process of semiconductor devices and chip etc., etching technics is most frequent in numerous techniques to be used and go out
Existing.It, can some or all of certain materials for etching or getting rid of on chip in the etching technics of IC manufacture.All
In etching technics, plasma etching and ion beam etching (IBE) technique are more and more important, especially with chip integration
It improves, critical dimension reduction, the raising of the process requirements such as high selectivity ratio and accurate pattern transfer has more highlighted plasma
The advantages of etching and ion beam etching.
As chip key structure from plane turns to 3D structure (such as: the FinFET structure in logical device), advanced deposits
Reservoir structures (such as: magnetic memory (MRAM) and resistance-variable storing device (RRAM), the essence that these device architectures require etching technics
Exactness, repeatability and processing quality require higher and higher.It is special there are many planting simultaneously in these device manufacturing processes of MRAM
Metal material and metal compound material are needed using etching technics.The quarter generated during plasma etch process simultaneously
Pattern side wall after erosion byproduct of reaction major part and metal or rich metalliferous film and partial etching technique is not
It is steep to be also required to technique to supplement modification；Find the ion sputtering in ion beam etching of Fresnel to three of the above by Germicidal efficacy
Problem can be extremely improved.It also is appreciated that simultaneously and is possible to meeting to existing device or core using ion beam etching
Chip architecture causes to damage.Therefore there is an urgent need for the ion beam etching systems for designing a kind of improved form to solve in advanced device
The these problems encountered in manufacturing process.
In ion beam etching system, in order to prevent when wafer not yet reaches process station ion beam to wafer and electricity
The injury of pole can be provided with a baffle between ion source and the slide holder of placement wafer.Presently, there are ion beam etching
What the ion beam baffle in system used is all that plate blocks, and is equivalent to the aperture plate of baffle and ion source into parallel shape.Due to chamber
The limitation in body space, the distance between baffle and ion source aperture plate are closer, as shown in Figure 1, within the system, baffle, which is in, to be hidden
When gear state, the ion beam that ion source issues is after the acceleration of ion source aperture plate along the vertical directive baffle 100 in direction 10
Surface, ion beam will appear after encountering baffle 100 bombards baffle material, many to bombard the baffle material sputtered
Material particle can be reflected back toward in the insulating cylinder inside ion source along direction 20, be reacted with insulating cylinder inner materials, and
Its inner surface deposition, forms the substance of one layer of taupe, the deposition of this kind of substance may result in ion source internal energy by
It gradually accumulates, so that insulating cylinder gradually becomes opaque in use, and insulating cylinder inner wall forms conductive layer, for a long time
Accumulation will cause insulating cylinder rupture.Conductive earthing is easily caused in the material rebound to ion source aperture plate of reflection simultaneously, so that ion
The damage of source aperture plate.
Summary of the invention
To solve the above-mentioned problems, the present invention discloses a kind of ion beam etching system, including reaction cavity, slide holder, from
Component, baffle and Baffle drive device, the baffle include interconnecting piece and occlusion part, and the interconnecting piece and the barrier driving fill
Set and be connected, the baffle under the action of Baffle drive device around driving axis between upper and lower two extreme positions into
Row rotation, the driving axis and first direction are substantially parallel.The occlusion part be set to the aperture plate of the ion source with it is described
Between slide holder, when the baffle is located at upper limit position, ion beam emits from the aperture plate of ion source to the surface of occlusion part, institute
State the region that the barrier material come out by ion beam sputtering is reflected into other than the aperture plate of ion source by occlusion part.
In ion beam etching system of the invention, preferably, at least one face of the occlusion part is in inclined-plane, the inclined-plane
It is tilted to the direction far from the ion source, the angle with second direction is acute angle, the second direction and the first direction
It is substantially vertical.
In ion beam etching system of the invention, preferably, the occlusion part only includes the first inclined-plane, and described first is oblique
Face and the second direction are in 15 °~60 ° angles.
In ion beam etching system of the invention, preferably, the occlusion part includes the second inclined-plane and third inclined-plane, and
The junction on second inclined-plane and the third inclined-plane is located on the central axis of ion source, the central axis of the ion source
It is substantially parallel with the first direction.
In ion beam etching system of the invention, preferably, the angle of second inclined-plane and the second direction is 30 °
~75 °, the third inclined-plane and the angle of the second direction are 30 °~75 °.
In ion beam etching system of the invention, preferably, second inclined-plane and the third inclined-plane are with the ion
The central axis in source is symmetrical arranged for symmetry axis.
In ion beam etching system of the invention, preferably, the side of aperture plate of the occlusion part towards the ion source
In for dome shape, and the center line of spherical surface is overlapped with the central axis of ion source.
In ion beam etching system of the invention, preferably, the material of the baffle uses graphite, carbon fiber or molybdenum.
In ion beam etching system of the invention, preferably, the aperture plate of the size of the occlusion part than the ion source
Big 20~the 50mm of size.
In ion beam etching system of the invention, preferably, the thickness of the baffle is between 2~6mm.
The reduction that the present invention is capable of high degree is entered inside ion source by the barrier material that ion beam sputtering comes out
Quantity reduces the damage to the insulating cylinder and ion source aperture plate of ion source, improves the stability and reliability of equipment.
Detailed description of the invention
Fig. 1 is the schematic diagram of the baffle of the ion beam etching system of the prior art.
Fig. 2 is the working state schematic representation of ion beam etching system of the invention.
Fig. 3 is the schematic diagram of the embodiment one of the baffle of ion beam etching system of the invention.
Fig. 4 is a kind of schematic diagram of the embodiment two of the baffle of ion beam etching system of the invention.
Fig. 5 is a kind of schematic diagram of the embodiment three of the baffle of ion beam etching system of the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it should be understood that described herein
Specific examples are only used to explain the present invention, is not intended to limit the present invention.Described embodiment is only the present invention one
Divide embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making
All other embodiment obtained, shall fall within the protection scope of the present invention under the premise of creative work.
In the description of the present invention, it should be noted that the orientation of the instructions such as term " on ", "lower", " vertical " "horizontal"
Or positional relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, and
It is not that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore
It is not considered as limiting the invention.In addition, term " first ", " second " are used for description purposes only, and should not be understood as referring to
Show or imply relative importance.
In addition, many specific details of the invention, such as the structure of device, material, size, place are described hereinafter
Science and engineering skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can be with
The present invention is not realized according to these specific details.Unless hereinafter particularly point out, the various pieces in device can be by
Material well known to those skilled in the art is constituted, or can be using the material with similar functions of exploitation in the future.
Fig. 2 is the operation schematic diagram of ion beam etching system of the invention.Ion beam etching system of the invention includes anti-
Answer cavity 1, rotatable slide holder 2, ion source 6, the external fixed cover 8 in fixed ion source, baffle 4 and Baffle drive device 5.
Reaction cavity 1 is the polyhedral structure with hollow feature, is provided with rectangular opening on a side wall.The rectangular opening
Size meets the standard of semiconductor SemiS2 certification, and the gauge of the rectangular opening is adjusted according to the wafer that the system is applicable in
It is very little.The aperture for manipulator carrying wafer enter reaction chamber, by wafer be placed in etching slide holder on after, manipulator from
It is exited in the aperture, closes the external gate valve installed, so that becoming airtight vacuum state inside reaction chamber.Slide holder 2 is located at
1 middle part of reaction cavity, L-shaped, top is connected to outside reaction chamber, makes slide holder by motor or other driving mechanisms
2 can rotate around top connecting joint axis.According to the technological requirements, when performing etching technique, slide holder 2 is arranged at an angle
Position is spent, ion source is opened and discharges ion beam, the wafer 3 being placed on slide holder 2 is performed etching.
As shown in Fig. 3~Fig. 5, baffle 4 includes interconnecting piece 41 and occlusion part 42.Interconnecting piece 41 and 5 phase of Baffle drive device
Connection, baffle 4 are rotated between upper and lower two extreme positions under the action of Baffle drive device 5 around driving axis, are driven
Shaft line and X-direction (also referred to as first direction) are substantially parallel.Occlusion part 42 be set to ion source aperture plate 7 and slide holder 2 it
Between.Before slide holder 2 and wafer 3 not yet reach setting position, baffle is located at upper limit position and is in occlusion state, gear from
Between the aperture plate 7 and slide holder 2 of component, slide holder 2 and wafer 3 are protected, prevent they by ion beam damage from
And influence final product quality.It, will in some embodiments of the present invention in order to solve problems of the prior art mentioned above
At least one face of occlusion part is designed as inclined-plane, this is tiltedly tilted away from the direction of ion source, and (also referred to as with Y-direction
Second direction) angle be acute angle.X-direction is substantially vertical with Y-direction.It in further embodiments, can also be by occlusion part 42
The side of aperture plate towards ion source is designed as dome shape, and the center line of spherical surface is overlapped with the central axis of ion source.It is above-mentioned
The baffle of design, when ion beam emits from the aperture plate of ion source to the surface of occlusion part, occlusion part can will be by ion beam
The barrier material sputtered out is reflected into the region other than the aperture plate of ion source.Reducing for high degree is gone out by ion beam sputtering
The barrier material come enters the quantity inside ion source, reduces the damage to the insulating cylinder and ion source aperture plate of ion source,
Improve the stability and reliability of equipment.
After slide holder 2 and wafer 3 reach setting etching position, Baffle drive device 5 drive baffle 4 be rotated down from
7 mouthfuls of aperture plate for opening ion source, ion source transmitting ion beam 3 surface of wafer is hit with certain speed, by crystal column surface not by
The material of covering, which knocks out, to be come, and realizes etching effect.Ion beam as shown in Figure 1 is issued from ion source 6, by the aperture plate of ion source
7 accelerate, and hit wafer 3 along direction 50.
The embodiment of some baffles
Fig. 3 is a kind of schematic diagram of the embodiment one of the baffle of ion beam etching system of the invention.As shown in figure 3, gear
The occlusion part 42 of plate 4 is in inclined-plane, this is tiltedly tilted away from the direction of ion source, that is to say, that the aperture plate of occlusion part and ion source
7 is not parallel, but at an angle.Preferably, occlusion part and the angle α of Y-direction are acute angle.It is further preferred that the angle α
Between 15 °~60 °.It is hit along direction 50 to the surface of occlusion part 42 when ion beam is emitted from the aperture plate 7 of ion source,
Due to the presence of angle [alpha], partially by ion beam sputtering come out barrier material along route 52 be reflected into the aperture plate 7 of ion source with
Outer region, inside reaction chamber.Reducing for high degree enters ion by the barrier material that ion beam sputtering comes out
Quantity inside source reduces the damage to the insulating cylinder and ion source aperture plate of ion source, improve equipment stability and can
By property.Under the premise of not influencing the rotation of slide holder inside equipment, angle [alpha] is bigger, then be reflected into ion source by ion
The barrier material that beam sputtering comes out is fewer, better to the protecting effect of ion source.
Fig. 4 is a kind of schematic diagram of the embodiment two of the baffle of ion beam etching system of the invention.As shown in figure 4, hiding
Stopper 42 includes the second inclined-plane 43 and third inclined-plane 44, and the junction on the second inclined-plane 43 and third inclined-plane 44 is located at ion source
Central axis 500 on, the central axis 500 and X-direction of ion source are substantially parallel.Preferably, the second inclined-plane 43 and Y-direction
Angle β is 30 °~75 °, and the angle γ of third inclined-plane 44 and Y-direction is 30 °~75 °.The angle of second inclined-plane 43 and Y-direction with
Third inclined-plane 44 and the angle of Y-direction can be the same or different.As preferred an example, the second inclined-plane 43 and third inclined-plane
44 are symmetrical arranged with the central axis 500 of ion source for symmetry axis.
When ion beam from the aperture plate 7 of ion source emit along direction 50 hit to the second inclined-plane 43 surface, by from
The barrier material that beamlet sputters out is reflected into the top of the aperture plate 7 of ion source along route 53.When ion beam is from ion source
Aperture plate 7 emit along direction 50 hit to third inclined-plane 44 surface, by ion beam sputtering come out barrier material along
Route 54 is reflected into the lower section of the aperture plate 7 of ion source.This kind of structure design may be implemented to reduce when high density ion beam emittance several
All barrier materials come out by ion beam sputtering protect the insulating cylinder inside ion source to the reflection inside ion source
And ion source aperture plate is not damaged.Under the premise of not influencing the rotation of slide holder inside equipment, angle γ and β are bigger, then instead
The barrier material come out by ion beam sputtering being mapped in ion source is fewer, better to the protecting effect of ion source.
Fig. 5 is a kind of schematic diagram of the embodiment three of the baffle of ion beam etching system of the invention.As shown in figure 5, gear
The occlusion part 42 of plate 4 is towards the spherical shape in the side of the aperture plate of ion source, and the central axis of the center line of spherical surface and ion source
It is overlapped.The top of spherical surface top half and the inclination angle of Y-direction are δ, preferably 15 °≤δ≤90 °, the bottom end of spherical surface lower half portion
Inclination angle with Y-direction is ε, preferably 15 °≤ε≤90 °.The ion beam that ion source 6 is emitted via aperture plate 7 is along path 50
The aspheric surface of directive occlusion part 42, the material that the top half of occlusion part is sputtered out distributes obliquely upward, under baffle
The material that half portion is sputtered out oliquely downward distributes.Quilt when high density ion beam emittance can be effectively reduced in this kind of structure design
The barrier material that ion beam sputtering comes out to the probability of the reflection inside ion source, protect insulating cylinder inside ion source and from
The aperture plate of component is not damaged.The ball face radius of occlusion part 42 is R, certain in distance of the baffle apart from component aperture plate, and
Under the premise of satisfaction shelters from all ion beams emitted from aperture plate, the size of R is smaller, and the material that baffle sputters out arrives
Up to the fewer of aperture plate surface.
The material of baffle uses graphite, carbon fiber or molybdenum in any of the above-described embodiment.Preferably, the size ratio of occlusion part
Big 20~the 50mm of the size of the aperture plate of ion source.Preferably, the thickness of baffle is between 2~6mm.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.
Claims (10)
1. a kind of ion beam etching system, including reaction cavity, slide holder, ion source, baffle and Baffle drive device, feature
It is,
The baffle includes interconnecting piece and occlusion part,
The interconnecting piece is connected with the Baffle drive device, the baffle under the action of Baffle drive device around
Driving axis is rotated between upper and lower two extreme positions, and the driving axis and first direction are substantially parallel,
The occlusion part is set between the aperture plate of the ion source and the slide holder, when the baffle is located at limes superiors position
It sets, ion beam emits the baffle that will be come out to the surface of occlusion part, the occlusion part by ion beam sputtering from the aperture plate of ion source
Material is reflected into the region other than the aperture plate of ion source.
2. ion beam etching system according to claim 1, which is characterized in that it is characterized in that,
At least one face of the occlusion part is in inclined-plane, described tiltedly to tilt away from the direction of the ion source, with second party
To angle be acute angle, the second direction is substantially vertical with the first direction.
3. ion beam etching system according to claim 2, which is characterized in that
The occlusion part only includes the first inclined-plane, and first inclined-plane and the second direction are in 15 °~60 ° angles.
4. ion beam etching system according to claim 2, which is characterized in that
The occlusion part includes the second inclined-plane and third inclined-plane, and the junction on second inclined-plane and third inclined-plane position
In on the central axis of ion source, the central axis of the ion source and the first direction are substantially parallel.
5. ion beam etching system according to claim 4, which is characterized in that
Second inclined-plane and the angle of the second direction are 30 °~75 °, the folder on the third inclined-plane and the second direction
Angle is 30 °~75 °.
6. ion beam etching system according to claim 4, which is characterized in that
Second inclined-plane and the third inclined-plane are symmetrical arranged by symmetry axis of the central axis of the ion source.
7. ion beam etching system according to claim 1, which is characterized in that
The spherical shape in side of aperture plate of the occlusion part towards the ion source, and the center of the center line of spherical surface and ion source
Axis is overlapped.
8. ion beam etching system according to any one of claims 1 to 7, which is characterized in that
The material of the baffle uses graphite, carbon fiber or molybdenum.
9. ion beam etching system according to any one of claims 1 to 7, which is characterized in that
The size of the occlusion part is 20~50mm bigger than the size of the aperture plate of the ion source.
10. ion beam etching system according to any one of claims 1 to 7, which is characterized in that
The thickness of the baffle is between 2~6mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910252699.3A CN109935513B (en) | 2019-03-29 | 2019-03-29 | Ion beam etching system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910252699.3A CN109935513B (en) | 2019-03-29 | 2019-03-29 | Ion beam etching system |
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| CN109935513A true CN109935513A (en) | 2019-06-25 |
| CN109935513B CN109935513B (en) | 2021-08-06 |
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| CN201910252699.3A Active CN109935513B (en) | 2019-03-29 | 2019-03-29 | Ion beam etching system |
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Cited By (7)
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| CN110491758A (en) * | 2019-08-14 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of the ion beam etching chamber and processing method of assembly cleaning liner |
| CN110571120A (en) * | 2019-09-17 | 2019-12-13 | 江苏鲁汶仪器有限公司 | Ion source etching chamber with cleaning equipment and ion beam cleaning method |
| CN110571121A (en) * | 2019-09-17 | 2019-12-13 | 江苏鲁汶仪器有限公司 | Ion beam etching device and method for self-cleaning by adopting remote plasma |
| CN110643954A (en) * | 2019-10-21 | 2020-01-03 | 合肥晞隆光电有限公司 | Coating apparatus, ion source, and gate structure |
| CN111341632A (en) * | 2020-03-02 | 2020-06-26 | 京东方科技集团股份有限公司 | Carbon plate structure, analysis magnetic field and ion implantation equipment |
| WO2023005055A1 (en) * | 2021-07-30 | 2023-02-02 | 江苏鲁汶仪器有限公司 | Plasma treatment method |
| TWI819432B (en) * | 2021-01-04 | 2023-10-21 | 大陸商江蘇魯汶儀器有限公司 | A double-baffle device for improving a uniformity of etching |
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| CN110491758A (en) * | 2019-08-14 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of the ion beam etching chamber and processing method of assembly cleaning liner |
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| TWI819432B (en) * | 2021-01-04 | 2023-10-21 | 大陸商江蘇魯汶儀器有限公司 | A double-baffle device for improving a uniformity of etching |
| WO2023005055A1 (en) * | 2021-07-30 | 2023-02-02 | 江苏鲁汶仪器有限公司 | Plasma treatment method |
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|---|---|
| CN109935513B (en) | 2021-08-06 |
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