TWI727477B - Reaction chamber and semiconductor processing equipment - Google Patents

Abstract

The present invention provides a reaction chamber and semiconductor processing equipment. The reaction chamber includes: a chamber body; a base, which is arranged in the chamber body and used to carry a workpiece to be processed; and a target material is arranged in the chamber body, And located above the base; and a collimator, which is arranged in the chamber body and between the target and the base, to improve the film coverage of the bottom of the deep hole and the film on the side wall of the deep hole on the workpiece to be processed Coverage symmetry. The reaction chamber provided by the present invention can improve the film coverage at the bottom of the deep hole and the symmetry of the film coverage on the sidewall of the deep hole, and can also more accurately control the film growth in a thinner film deposition process.

Description

Reaction chamber and semiconductor processing equipment

The present invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment.

At present, the magnetron sputtering physical vapor deposition method has been widely used in the field of semiconductor manufacturing. The existing magnetron sputtering physical vapor deposition equipment is shown in FIG. 1, its reaction chamber includes a grounded chamber body 1, and a susceptor 8 is provided in the chamber body 1 to support a workpiece 10 to be processed. A snap ring 9 is also provided around the base 8. In addition, a target 4 is also provided in the chamber body 1 and above the base 8, which is electrically connected to the excitation source 12. The excitation source 12 is used to apply a negative bias to the target 4 to excite the processing gas inside the chamber body 1 to form a plasma, and to attract positively charged ions in the plasma to bombard the target 4, so that metal atoms escape the target. The surface is deposited on the workpiece 10 to be processed. On the side of the target material 4 away from the inside of the chamber body 1 is also provided a support assembly 2, which forms a sealed cavity with the target material 4, and is filled with deionized water 3. In addition, a magnetron 5 is also provided in the sealed cavity, and a driving device 6 is also installed on the support assembly 2 to drive the magnetron 5 to rotate, while making the magnetron 5 in the center area of the target 4 and The edge areas reciprocate so that the magnetron 5 can scan the entire surface of the target 4. The cavity body 1 is provided with an inner liner 7 to prevent the cavity wall from being contaminated. In order to improve the film coverage of the deep hole of the workpiece to be processed, radio frequency power is applied to the base 8 through the radio frequency power supply 11.

During the production process, due to the lack of good directionality of the metal atoms escaping from the target, for the deep holes of the workpiece to be processed, especially the deep holes in the edge area, only part of the metal atoms can be deposited on the sidewall of the deep hole, which affects The coverage of the sidewall of the deep hole, and part of the sidewall of the deep hole is more difficult to be deposited by metal ions, resulting in poor symmetry of the coverage of the sidewall of the deep hole. Especially the sidewall position close to the bottom of the deep hole, because the position is relatively high in depth and width, the film deposition effect at this position is unsatisfactory.

In order to solve the problem of poor coverage of metal atoms on the sidewall of the deep hole and poor symmetry during the production process of the existing reaction chamber, the film deposition effect at this position is unsatisfactory, the present invention provides a reaction chamber and semiconductor processing equipment .

The present invention provides a reaction chamber to solve the problem, including: Chamber body; The base is arranged in the chamber body and is used to carry the workpiece to be processed; The target material is arranged in the chamber body and located above the base; and A collimator is arranged in the chamber body and located between the target and the base, and is used to improve the film coverage of the bottom of the deep hole on the workpiece to be processed and the film on the side wall of the deep hole Coverage symmetry.

In some embodiments of the present invention, the collimator includes a collimating body, and the collimating body corresponds to a central area, a middle area, and an edge area divided on the plane where the target is located. Each area includes a plurality of through holes extending along the axial direction of the chamber body, wherein the aspect ratio of each through hole corresponding to the middle area is greater than the aspect ratio of each through hole corresponding to the central area And at least one of the aspect ratio of each through hole corresponding to the edge region.

In some embodiments of the present invention, the aspect ratio of each through hole corresponding to the middle region is greater than the aspect ratio of each through hole corresponding to the central region, and the aspect ratio of each through hole corresponding to the middle region is Greater than the aspect ratio of each through hole corresponding to the edge region.

In some embodiments of the present invention, the aspect ratio of each through hole corresponding to the central area is the same as the aspect ratio of each through hole corresponding to the edge area.

In some embodiments of the present invention, the aspect ratio of each through hole corresponding to the middle area is more than 15% larger than the aspect ratio of each through hole corresponding to the central area; The aspect ratio is larger than the aspect ratio of each through hole corresponding to the edge area by more than 15%.

In some embodiments of the present invention, the values of the aspect ratio of each through hole corresponding to the central area and the aspect ratio of each through hole corresponding to the edge area are both greater than 2.

In some embodiments of the present invention, the radial cross-sectional area of each through hole corresponding to the central region, the radial cross-sectional area of each through hole corresponding to the intermediate region, and the respective radial cross-sectional area corresponding to the edge region The radial cross-sectional area of the through holes is the same, and the depth of each through hole corresponding to the middle area is greater than the depth of each through hole corresponding to the central area, and the depth of each through hole corresponding to the middle area is greater than that of the corresponding one. The depth of each through hole in the edge area.

In some embodiments of the present invention, the depth of each through hole corresponding to the central area, the depth of each through hole corresponding to the middle area, and the depth of each through hole corresponding to the edge area are the same, and correspond to the The radial cross-sectional area of each through hole in the middle region is smaller than the radial cross-sectional area of each through hole corresponding to the central region, and the radial cross-sectional area of each through hole corresponding to the middle region is smaller than the corresponding one. The radial cross-sectional area of each of the through holes in the edge region.

In some embodiments of the present invention, the sum of the areas of the radial cross-section of the collimating body corresponding to the central area and the edge area respectively account for more than 60% of the total radial cross-sectional area of the collimating body .

In some embodiments of the present invention, the reaction chamber further includes: The coil is arranged around the side wall of the chamber body and is located between the collimator and the base; The radio frequency power supply is electrically connected to the coil.

In some embodiments of the present invention, the side wall of the chamber body includes an upper side wall and a lower side wall spaced apart along its axis; the reaction chamber further includes: An insulating cylinder connected between the upper side wall and the lower side wall, and the coil is arranged around the outer side of the insulating cylinder; The Faraday shield is arranged around the inner side of the insulating cylinder.

In some embodiments of the present invention, the reaction chamber further includes: The upper lining is arranged around the inner side of the upper side wall, and the collimator is fixedly connected to the upper lining; The lower lining is arranged around the lower side wall and the base.

In some embodiments of the present invention, the electric potential of the Faraday shield is floating.

In some embodiments of the present invention, at least one slit is provided on the Faraday shield, and the slit is arranged along the axial direction of the Faraday shield.

In some embodiments of the present invention, the width of the slit in the circumferential direction of the Faraday shield is less than 10 mm.

In some embodiments of the present invention, the material used for the collimator includes aluminum or stainless steel.

According to another aspect of the present invention, there is provided a semiconductor processing equipment, including the reaction chamber described in any one of the above.

Compared with the prior art, the efficacies that can be obtained by the technical means proposed by the present invention include: The reaction chamber provided by the present invention, through the collimator located in the chamber body and between the target and the base, can make the metal atoms escaping from the target have good directivity after passing through the collimator, It can be more easily deposited to the bottom of the deep hole when incident on the workpiece to be processed, and can be deposited more evenly to the two side walls of the deep hole, thereby improving the film coverage of the bottom of the deep hole and the film coverage of the sidewall of the deep hole symmetry. At the same time, the collimator can also filter the metal atoms generated in each area of the target to different degrees to reduce the deposition rate, so that the film growth can be more accurately controlled in the thinner film deposition process. The semiconductor processing equipment provided by the present invention can improve the film coverage at the bottom of the deep hole and the symmetry of the film coverage on the sidewall of the deep hole by using the above-mentioned reaction chamber provided by the present invention.

In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the drawings.

An embodiment of the present invention provides a reaction chamber. As shown in FIG. 2, the reaction chamber includes: a chamber body 1, a base 2, a target 3 and a collimator 4.

The base 2 is arranged in the cavity body 1, specifically, it may be arranged at the bottom of the cavity body 1, used to carry the workpiece X to be processed, and is electrically connected to the radio frequency power supply 22, which is used to apply radio frequency to the base 2 The power is used to form a bias on the base 2 so as to improve the film coverage of the deep hole of the workpiece to be processed. A pressure ring 21 is also provided around the base 2 for fixing the position of the workpiece X to be processed on the base 2.

The target 3 is arranged in the cavity body 1 and above the base 2. Specifically, it may be arranged on the top of the cavity body 1.

The collimator 4 is arranged in the chamber body 1 and located between the target 3 and the base 2, and the material used for the collimator 4 includes metal materials such as aluminum (Al) or stainless steel.

An upper electrode assembly 5 may be provided on the upper part of the cavity body 1, and the upper electrode assembly 5 includes: a magnetron 501, a driving device 502, a supporting assembly 503 and a plasma excitation source 504.

Wherein, the plasma excitation source 504 is electrically connected to the target 3, and is used to apply a negative bias to the target 3 to excite the processing gas inside the chamber body 1 to form a plasma, and to attract positively charged ions in the plasma to bombard The target 3 allows the metal atoms to escape from the surface of the target and deposit on the workpiece X to be processed. The supporting assembly 503 is disposed on the side of the target 3 away from the chamber body 1 and forms a sealed chamber with the target 3 suitable for containing deionized water 505, and the deionized water 505 is used to cool the target 3. The magnetron 501 is located in the sealed chamber and is connected to the driving device 502 outside the sealed chamber. The magnetron 501 scans the target 3 under the driving of the driving device 502 to generate a magnetic field near the surface of the target 3.

During the production process, the plasma excitation source 504 applies a bias voltage to the target 3 to form a negative pressure with respect to the grounded chamber body 1, thereby discharging the processing gas such as argon in the chamber body 1 to generate argon ions And electronics. The magnetic field generated by the magnetron 501 can prolong the movement trajectory of the electrons. During the movement of the electrons, they continuously collide with argon atoms, ionizing a large amount of argon ions, which can increase the ionization rate of the target. The positively charged argon ions are attracted to the negatively biased target 3. When the energy of the argon ion is high enough, it hits the target 3, causing the metal atoms to escape from the surface of the target 3 and move downward to deposit on the workpiece X to be processed.

As shown in FIG. 2 and FIG. 3, the collimator 4 provided in this embodiment is arranged in the chamber body 1 and located between the target 3 and the base 2. The collimator 4 can make the metal atoms escaping from the target 3 have good directivity after passing through the collimator 4, so that it can be more easily deposited to the bottom of the deep hole when incident on the workpiece X to be processed, and can be more Evenly deposited on the two sidewalls of the deep hole, thereby improving the film coverage at the bottom of the deep hole and the symmetry of the film coverage on the sidewall of the deep hole. At the same time, the collimator 4 can also filter the metal atoms generated in each region of the target 3 to different degrees to reduce the deposition rate, so that the film growth can be more accurately controlled in the thinner film deposition process. In addition, the collimator 4 also increases the negative bias voltage of the base 2, which is beneficial to improve the film coverage.

In this embodiment, as shown in FIGS. 3 and 4, the collimator 4 includes a collimating body 41, and the collimating body 41 is in contact with the plane of the target 3 (that is, with the chamber body 1). The inner opposite surfaces are parallel to each other in the plane of the X direction and the Y direction in Fig. 3). The central area C, the middle area B and the edge area A that surround the central area C in turn, include areas corresponding to A plurality of through holes 42 extending along the axial direction of the chamber body 1 (the Z direction shown in FIG. 1), wherein the aspect ratio of each through hole 42 corresponding to the middle area B is greater than that of each through hole corresponding to the central area C At least one of the aspect ratio of 42 and the aspect ratio of each through hole 42 corresponding to the edge area A. In other words, the through holes 42 of the collimator 4 corresponding to different regions in the radial direction of the chamber body 1 have different aspect ratios. The so-called aspect ratio refers to the ratio of the depth of the through hole 42 to the width D, where the depth refers to the axial length of the through hole 41, and the width D refers to the radial cross section of the through hole 42. The distance between the sides.

Optionally, the collimating body 41 is coaxial with the chamber body 1, that is, the axis of the collimating body 41 coincides with the axis of the chamber body 1.

In practical applications, the radial cross-sectional shape of the through hole 42 is not limited, and may be a polygonal or circular shape, for example. In FIG. 3, the radial cross-sectional shape of the through holes 42 is a regular hexagon, and the through holes 42 are arranged in the collimating body 41 to form a honeycomb structure. In addition, the aspect ratios of the through holes 42 in the same area on the radial cross section of the corresponding chamber body 1 are the same.

Hereinafter, the aspect ratio of each through hole 42 corresponding to the central area C is called the central aspect ratio, the aspect ratio of each through hole 42 corresponding to the intermediate area B is called the intermediate aspect ratio, and the corresponding edge area A The aspect ratio of each through hole 42 is called the edge aspect ratio.

In this embodiment, the middle aspect ratio is greater than the center aspect ratio, and the middle aspect ratio is greater than the edge aspect ratio, that is, the middle aspect ratio is both greater than the center aspect ratio and greater than the edge aspect ratio. In this way, when the metal atoms produced by the target 3 pass through the collimator 4, corresponding to the middle area B of the target 3, more metal atoms will be deposited on the collimator 4, so that even if the metal produced from the middle area B There are more atoms than the central area C and the edge area A. The number of metal atoms corresponding to the middle area B after passing through the collimator 4 will be basically the same as the number of metal atoms in the other two areas after passing through the collimator 4. There will be significant differences. The collimator 4 is equivalent to a filter, which plays a filtering role, so that the number of metal atoms passing through corresponding different regions tends to be uniform, thereby improving the uniformity of film deposition.

Optionally, the central aspect ratio and the edge aspect ratio have the same value, that is, the central area C and the edge area A have the same aspect ratio. In this way, it can be ensured that the number of metal atoms corresponding to the central area C and the edge area A after passing through the collimator 4 is the same.

Further optionally, the middle aspect ratio is more than 15% larger than the center aspect ratio, and the middle aspect ratio is more than 15% larger than the edge aspect ratio. Within this range, it can be ensured that the number of metal atoms corresponding to each region after passing through the collimator 4 is basically the same.

In addition, optionally, the values of the central aspect ratio and the edge aspect ratio are both greater than 2. Within this range, it can effectively play a filtering role.

In this embodiment, the radial cross-sectional area of each through hole 42 in the central region C, the radial cross-sectional area of each through hole 42 in the middle region B, and the radial cross-sectional area of each through hole 42 in the edge region A are the same. In addition, the depth of each through hole 42 in the middle area B should be greater than the depth of each through hole 42 in the central area C and the edge area A, wherein the depth of the through holes 42 in the central area C and the edge area A are both 50 mm and above.

Alternatively, the central area C, the middle area B, and the edge area A may also have the same through hole depth. In this case, the radial cross-sectional area of each through hole in the middle area B should be smaller than the radial cross-sectional area of each through hole in the central area C and the edge area A.

In practical applications, the radial cross-sections of the collimating body 1 correspond to the central area C, the middle area B, and the edge area. The respective sizes can be set according to specific needs. However, the radial cross-sections of the collimating body 1 correspond to the center. The sum of the areas of the area C and the edge area A should account for more than 60% of the total radial cross-sectional area of the collimating body 1. In this way, it can be ensured that the number of metal atoms corresponding to the central area C and the edge area A after passing through the collimator 4 is the same.

The foregoing is only an exemplary description, and the present embodiment is not limited thereto. For example, the middle aspect ratio can be greater than one of the center aspect ratio and the edge aspect ratio, and the middle aspect ratio is more than 15% larger than the center aspect ratio or the edge aspect ratio, which can also improve the film deposition. The effect of uniformity, film coverage at the bottom of the deep hole, and symmetry of the film coverage on the sidewall of the deep hole. In addition, when the middle aspect ratio is greater than the center aspect ratio and the edge aspect ratio, the values of the center aspect ratio and the edge aspect ratio can also be different, but still need to meet the middle aspect ratio, the center aspect ratio and the edge aspect ratio. The ratio is greater than 15% to ensure that the number of metal atoms in each region after passing through the collimator 4 is basically the same.

Continuing to refer to Figure 2, in this embodiment, the reaction chamber further includes: a coil 6 and a radio frequency power supply 7, wherein the coil 6 is arranged around the side wall of the cavity body 1, and is located between the collimator 4 and the base 2. , The coil 6 can be formed by winding one or more turns of a spiral coil. The radio frequency power supply 7 is electrically connected to the coil 6 for loading radio frequency power to the coil 6.

Optionally, the side wall of the chamber body 1 includes an upper side wall 11 and a lower side wall 12 spaced apart along its axis (ie, the Z direction in FIG. 2). In addition, the reaction chamber further includes an insulating cylinder 112 and a Faraday shield 132, wherein the insulating cylinder 112 is connected between the upper side wall 11 and the lower side wall 12, and the coil 6 is arranged around the outer side of the insulating cylinder 112. The Faraday shield 132 is arranged around the inner side of the insulating cylinder 112. Specifically, the radio frequency power supply 7 provides radio frequency power to the coil 6 so that the coil 6 generates an electromagnetic field, and the electromagnetic field is coupled into the chamber body 1 via the insulating cylinder 112.

The above-mentioned coil 6 and radio frequency power supply 7 constitute an auxiliary plasma excitation source. As shown in FIG. 5, during the process, a processing gas, such as argon, is passed into the chamber body 1, except that the plasma excitation source 504 of the upper electrode assembly 5 can excite the processing gas to generate plasma, and the energy emitted by the coil 6 can be coupled Into the chamber body 1, the argon gas is excited to generate the second plasma Ar ⁺ 101. Under the negative bias of the susceptor 2, the second plasma Ar ⁺ 101 accelerates bombardment of the thin film at the bottom of the deep hole on the workpiece X to be processed, so that a part of the metal M 102 deposited at the bottom of the deep hole is deposited on the two deep holes. The side wall, thereby improving the coverage of the side wall of the deep hole.

In addition, since the coil 6 is located outside the plasma environment and will not be contaminated, there is no need to replace the coil 6 separately, which reduces the cost of use.

In this embodiment, the upper side wall 11 and the lower side wall 12 are made of metal materials and grounded, and the insulating cylinder 112 is made of insulating materials such as ceramics and quartz.

In this embodiment, the reaction chamber further includes an upper lining 131 and a lower lining 133. Wherein, the upper lining 131 is arranged around the inner side of the upper side wall 11 to protect the upper side wall 11 from being contaminated. The collimator 4 is fixedly connected to the upper lining 131. Optionally, the collimator 4 may be integrally processed with the upper lining 131, or may be hung on the upper lining 131 through a connecting member.

The top end of the upper lining 131 is fixed to the upper side wall 11 through the adapter 14, the lower lining 33 is arranged around the lower side wall 12 and the base 2, and one end of the lower lining 33 is fixed to the lower side wall 12 through the adapter 15. One end extends to the base 2. The lower lining 33 is used to protect the lower side wall 12 and the bottom wall 13 from being contaminated.

The Faraday shield 132 is used to protect the insulating cylinder 112 from being polluted, which improves the service life of the insulating cylinder 112 and reduces the use cost.

The upper lining 131 and the lower lining 133 are grounded through an adapter, and the Faraday shield 132 is set to a floating potential, and is isolated from the grounded upper lining 131 and the lower lining 133 by insulating materials such as ceramic or quartz. As shown in FIG. 5, the Faraday shield 132 can be fixed to the adapter 14 through an insulating column 16 made of ceramic material so as to be suspended on the chamber body 1 so that the potential is suspended. By setting the potential of the Faraday shield 132 to be suspended, more radio frequency energy generated by the coil 6 can be coupled into the chamber body 1 through the Faraday shield 132, which further improves the energy coupling efficiency. Of course, in practical applications, the Faraday shield 132 can also be grounded or connected to electrical components to make them at different potentials.

Optionally, in order to prevent the Faraday shield 132 from generating eddy current loss and heating on the energy emitted by the coil 6, as shown in FIG. 5, the Faraday shield 132 is provided with at least one slit 1321 along the axis of the Faraday shield 132 It is arranged in the direction, that is, it extends along the Z direction shown in FIG. 2. When there are multiple slits 1321, they can be arranged at intervals along the circumferential direction of the Faraday shield 132.

In this embodiment, the Faraday shield 132 is completely broken at the slit 1321, that is, each slit 1321 divides the Faraday shield 132 into plates that do not contact each other. In this way, eddy current loss and heat generation can be effectively prevented, so that the energy of the coil 6 can be effectively coupled into the chamber body 1.

In practical applications, the number of slits in the Faraday shield 132 can also be less than or more than four.

Optionally, the width of each slit 1321 in the circumferential direction of the Faraday shield 132 is less than 10 mm.

In summary, in the reaction chamber provided by the embodiment of the present invention, the collimator can make the metal atoms escaping from the target pass through the collimator in the chamber body and located between the target and the base. After it has good directionality, it can be more easily deposited to the bottom of the deep hole when it is incident on the workpiece to be processed, and can be deposited more evenly to the two side walls of the deep hole, thereby improving the film coverage at the bottom of the deep hole and Symmetry of the film coverage of the sidewall of the deep hole. At the same time, the collimator can also filter the metal atoms generated in each area of the target to different degrees to reduce the deposition rate, so that the film growth can be more accurately controlled in the thinner film deposition process.

Another embodiment of the present invention provides a semiconductor processing equipment, which is a magnetron sputtering physical vapor deposition equipment, which can be used for the preparation of sputtering materials and thin films such as Cu, Ta, Ti, and Al. The semiconductor processing equipment includes the reaction chamber of the previous embodiment.

The semiconductor processing equipment provided by the embodiment of the present invention can improve the film coverage of the bottom of the deep hole and the symmetry of the film coverage of the sidewall of the deep hole by using the above-mentioned reaction chamber provided by the embodiment of the present invention.

It should be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only the directions for referring to the drawings, not the use of To limit the protection scope of the present invention. Throughout the diagrams, the same elements are represented by the same or similar diagram labels. When it may cause confusion in the understanding of the present invention, conventional structures or configurations will be omitted.

In addition, the shape and size of each component in the figure do not reflect the actual size and proportion, but merely illustrate the content of the embodiment of the present invention. In addition, in the request item, any reference symbol located between the brackets should not be constructed as a restriction on the request item.

Unless there is a well-known meaning to the contrary, the numerical parameters in this specification and the appended claims are approximate values and can be changed according to the required characteristics obtained through the content of the present invention. Specifically, all the numbers used in the specification and claims to indicate the content of the composition, the reaction conditions, etc., should be understood as being modified by the term "about" in all cases. In general, the meaning of its expression refers to a change of ±10% in some embodiments, a change of ±5% in some embodiments, a change of ±1% in some embodiments, and a change of ±1% in some embodiments. In the example, a change of ±0.5%.

Furthermore, the word "include" does not exclude the existence of elements or steps that are not listed in the request item. The word "a" or "an" preceding an element does not exclude the presence of multiple such elements.

In addition, unless the steps are specifically described or must occur sequentially, the order of the above steps is not limited to the above list, and can be changed or rearranged according to the required design. Moreover, the above-mentioned embodiments can be mixed and matched with each other or mixed and matched with other embodiments based on the consideration of design and reliability, that is, the technical features in different embodiments can be freely combined to form more embodiments.

Similarly, it should be understood that in order to simplify the present invention and help understand one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment. , Figure, or its description. However, the disclosed method should not be interpreted as reflecting the intention that the claimed invention requires more features than those explicitly recorded in each claim. More precisely, as reflected in the following claims, the disclosure aspect is less than all the features of the single embodiment disclosed above. Therefore, the claims following the specific implementation are thus clearly incorporated into the specific implementation, wherein each claim itself serves as a separate embodiment of the present invention.

The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in further detail. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Within the spirit and principle of the present invention, any modification, equivalent replacement, improvement, etc., shall be included in the protection scope of the present invention.

[Prior Art] 1: Chamber body 2: Support component 3: Deionized water 4: Target 5: Magnetron 6: Drive device 7: Lining 8: Base 9: Snap ring 10: Workpiece to be processed 11: RF power supply 12: Excitation source 〔this invention〕 1: Chamber body 11: Upper side wall 12: Lower side wall 13: Bottom wall 112: Insulating cylinder 131: Upper lining 132: Faraday shield 133: Lower lining 1321: slit 14, 15: adapter 16: Insulating column 2: Base 21: Pressure ring 22: RF power supply 3: Target A: Central area B: Middle area C: Edge area 4: Collimator 41: Collimate the main body 42: Through hole 5: Upper electrode assembly 501: Magnetron 502: drive device 503: support component 504: Plasma excitation source 505: Deionized water 6: Coil 7: RF power supply X: Workpiece to be processed 101: second plasma 102: metal M

FIG. 1 is a schematic diagram of the structure of a prior art magnetron sputtering physical vapor deposition equipment; 2 is a schematic diagram of the structure of the reaction chamber of the preferred embodiment of the present invention; Figure 3 is a top view of the collimator of the preferred embodiment of the present invention; Fig. 4 is a region division diagram of the plane where the target material of the preferred embodiment of the present invention is located; 5 is a schematic diagram of the structure of the Faraday shield of the preferred embodiment of the present invention; Fig. 6 is a schematic diagram of a second plasma bombarding the bottom of a deep hole according to a preferred embodiment of the present invention.

1: Chamber body

11: Upper side wall

12: Lower side wall

13: bottom wall

112: Insulating cylinder

131: Upper lining

132: Faraday shield

133: lower lining

14, 15: adapter

2: pedestal

21: pressure ring

22: RF power supply

3: target

4: collimator

5: Upper electrode assembly

501: Magnetron

502: Drive

503: Support component

504: Plasma Excitation Source

505: deionized water

6: Coil

7: RF power supply

X: Workpiece to be processed

Claims (15)

A reaction chamber includes: a chamber body; a base, which is arranged in the chamber body and used to carry a workpiece to be processed; a target material, which is arranged in the chamber body and is located above the base And a collimator, disposed in the chamber body, and located between the target and the base, to improve the film coverage of the bottom of the deep hole and the side wall of the deep hole on the workpiece to be processed The film coverage symmetry; the collimator includes a collimating body, in the collimating body, and respectively corresponding to the central area, the middle area and the edge area divided on the plane where the target is located , Each includes a plurality of through holes extending along the axial direction of the chamber body, wherein the aspect ratio of each through hole corresponding to the middle area is greater than the aspect ratio of each through hole corresponding to the central area, corresponding to The aspect ratio of each through hole in the middle area is greater than the aspect ratio of each through hole in the edge area. In the reaction chamber according to claim 1, the aspect ratio of each through hole corresponding to the central area is the same as the aspect ratio of each through hole corresponding to the edge area. In the reaction chamber according to claim 1 or 2, the aspect ratio of each through hole corresponding to the middle region is greater than 15% greater than the aspect ratio of each through hole corresponding to the central region; The aspect ratio of each through hole is larger than the aspect ratio of each through hole corresponding to the edge area by more than 15%. In the reaction chamber according to claim 1, the values of the aspect ratio of each through hole corresponding to the central area and the aspect ratio of each through hole corresponding to the edge area are both greater than 2. The reaction chamber according to claim 1, the radial cross-sectional area of each through hole corresponding to the central area, the radial cross-sectional area of each through hole corresponding to the middle area, and the corresponding edge area The radial cross-sectional area of each of the through holes is the same, and corresponds to the area of each through hole in the middle region The depth is greater than the depth of each through hole corresponding to the central area, and the depth of each through hole corresponding to the middle area is greater than the depth of each through hole corresponding to the edge area. In the reaction chamber according to claim 1, the depth of each through hole corresponding to the central area, the depth of each through hole corresponding to the middle area, and the depth of each through hole corresponding to the edge area are the same, and corresponding The radial cross-sectional area of each through hole in the middle region is smaller than the radial cross-sectional area of each through hole corresponding to the central region, and the radial cross-sectional area of each through hole corresponding to the middle region is smaller than The radial cross-sectional area of each through hole corresponding to the edge region. The reaction chamber according to claim 1, wherein the sum of the areas of the radial cross-section of the collimating body corresponding to the central area and the edge area respectively account for the total radial cross-sectional area of the collimating body More than 60% of the total. The reaction chamber according to claim 1, wherein the reaction chamber further comprises: a coil arranged around the side wall of the chamber body and located between the collimator and the base; a radio frequency power supply, It is electrically connected to the coil. According to claim 8, the side wall of the chamber body includes an upper side wall and a lower side wall spaced apart along its axis; the reaction chamber further includes: an insulating cylinder connected to the upper side wall and Between the lower side walls, the coil is arranged around the outer side of the insulating cylinder; the Faraday shield is arranged around the inner side of the insulating cylinder. The reaction chamber according to claim 9, wherein the reaction chamber further comprises: an upper lining arranged around the inner side of the upper side wall, and the collimator is fixedly connected to the upper lining; and a lower lining , Circumferentially arranged between the lower side wall and the base. In the reaction chamber according to claim 9, the electric potential of the Faraday shield is suspended. In the reaction chamber according to claim 9, at least one slit is provided on the Faraday shield, and the slit is arranged along the axial direction of the Faraday shield. In the reaction chamber according to claim 12, the width of the slit in the circumferential direction of the Faraday shield is less than 10 mm. In the reaction chamber according to claim 1, the material used for the collimator includes aluminum or stainless steel. A semiconductor processing equipment, comprising the reaction chamber according to any one of claims 1 to 14.

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