TWI739194B - Lining components, reaction chambers and semiconductor processing equipment - Google Patents

Abstract

The present invention provides a lining assembly, a reaction chamber and a semiconductor processing equipment. The lining assembly includes a grounded lining ring body, in which a plurality of shields are arranged at intervals along the circumference of the lining ring body. Unit, each shield unit is a gap formed between the inner peripheral surface and the outer peripheral surface of the inner liner ring body. A plurality of second passages of the two first passages; wherein the orthographic projections of the two adjacent first passages are staggered on the inner circumferential surface of the inner lining ring body. The lining component provided by the present invention can protect the side wall of the reaction chamber and avoid contamination of the side wall of the reaction chamber.

Description

Lining components, reaction chambers and semiconductor processing equipment

The invention belongs to the field of semiconductor processing, and more specifically relates to an inner lining assembly, a reaction chamber and semiconductor processing equipment.

The magnetron sputtering physical vapor deposition equipment includes a reaction chamber, and a susceptor is arranged in the reaction chamber for supporting the workpiece to be processed. Moreover, in the reaction chamber and above the susceptor, a target is provided, which is electrically connected to the radio frequency power supply to excite the processing gas to form plasma. In addition, a support assembly is provided above the target material, which forms a sealed chamber body together with the target material, which is filled with deionized water. In addition, a magnetron is provided in the sealed chamber body, which is connected to a driving source outside the sealed chamber body, and under the action of the driving source, the magnetron scans the target.

During production, the reaction chamber is filled with processing gas, and the radio frequency power is turned on, the processing gas is excited to generate plasma, which bombards the target material, and the metal atoms escaping from the target material are deposited on the workpiece to be processed. However, part of the metal atoms escaping from the target material will also be deposited on the inner wall of the reaction chamber, causing the reaction chamber to be contaminated, thereby affecting the life and cost of the reaction chamber.

In order to solve the problem that part of the metal atoms escaping from the target material of the existing semiconductor processing equipment will be deposited on the inner wall of the reaction chamber and cause the reaction chamber to be contaminated, the present invention provides a lining assembly, a reaction chamber and a semiconductor processing equipment .

The present invention provides an inner liner assembly, including: a grounded inner liner ring body, in which a plurality of shield units are arranged at intervals along the circumference of the inner liner ring body, and each of the shield units is in place The gap formed between the inner circumferential surface and the outer circumferential surface of the inner liner ring body, the gap including a plurality of first spaced apart from the inner circumferential surface in the direction of the outer circumferential surface A channel and a plurality of second channels connecting two adjacent first channels; wherein the orthographic projections of the two adjacent first channels on the inner circumferential surface of the lining ring body are mutually staggered The gap forms a labyrinth structure, thereby protecting the side wall of the reaction chamber.

In some embodiments of the present invention, the lining ring body includes at least two sub-ring bodies nested with each other and having different inner diameters, each of the sub-ring bodies is grounded; for each of the gaps, each of the sub-rings The first channel is a radial through hole correspondingly arranged in each of the sub-rings; each of the second channels is an annular gap correspondingly arranged between each of the two adjacent sub-rings.

In some embodiments of the present invention, the aspect ratio of each of the slits satisfies: B/A+C/D>5

Wherein, A is the width of the radial through hole in the circumferential direction of the sub-ring body; B is the radial thickness of the sub-ring body; C is each two adjacent ones on the same sub-ring body The center distance between the radial through holes; D is the radial thickness of the annular gap.

In some embodiments of the present invention, the center distance between each two adjacent radial through holes on the same sub-ring body is greater than or equal to 2 mm.

In some embodiments of the present invention, the radial thickness of the sub-ring body is less than or equal to 5 mm.

In some embodiments of the present invention, the radial thickness of the annular gap is less than 10 mm.

In some embodiments of the present invention, the width of the radial through hole in the circumferential direction of the sub-ring body is 0.5 mm to 10 mm.

In some embodiments of the present invention, the number of the slits is on the order of tens.

In some embodiments of the present invention, the number of the slits is greater than or equal to 60.

In some embodiments of the present invention, corresponding to two adjacent sub-rings, each of the radial through holes in one of the sub-rings is located at the same diameter as the diameter of the other sub-ring. To the center of the through hole between two adjacent radial through holes.

In some embodiments of the present invention, each of the radial through holes extends along the axial direction of the sub-ring body.

In some embodiments of the present invention, each of the radial through holes penetrates the sub-ring body along the axial direction of the sub-ring body.

The present invention provides a reaction chamber, including a chamber body, and further comprising: a base, which is arranged in the chamber body, and is used to carry a workpiece to be processed; and a target material is arranged in the chamber body and is located in the chamber body. Above the base; the above-mentioned lining component provided by the present invention, the lining component is arranged around the inner side of the side wall of the chamber body.

In some embodiments of the present invention, it further includes: a coil arranged around the side wall of the chamber body; and a radio frequency power supply electrically connected to the coil.

In some embodiments of the present invention, the length of each of the gaps in the axial direction of the lining ring body is greater than the axial length of the coil, and the coil is on the outer peripheral surface of the lining ring body. The orthographic projections are all located between the two ends of the gap in the axial direction of the lining ring body.

The present invention provides a semiconductor processing equipment, including the above-mentioned reaction chamber provided by the present invention.

Compared with the prior art, the technical means proposed by the present invention can achieve improved efficacy including: the beneficial effects of the present invention: the liner assembly provided by the present invention is provided in the liner ring body with a multiplicity spaced along its circumferential direction. A mask unit, and the gap formed in the inner liner ring of the mask unit includes a direction from the inner circumference to the outer circumference. A plurality of first channels are arranged at intervals, and the orthographic projections of each two adjacent first channels are staggered with each other on the inner circumferential surface of the inner lining ring body. In this way, when the lining assembly is applied to the reaction chamber, the plasma can be blocked from passing through the gap, thereby protecting the side wall of the reaction chamber and avoiding contamination of the side wall of the reaction chamber.

The reaction chamber provided by the present invention can protect the side wall of the reaction chamber by using the above-mentioned lining assembly provided by the present invention, and prevent the side wall of the reaction chamber from being contaminated.

The semiconductor processing equipment provided by the present invention can protect the side wall of the reaction chamber by using the above-mentioned reaction chamber provided by the present invention, and prevent the side wall of the reaction chamber from being contaminated.

1: Chamber body

11: Upper side wall

12: Lower side wall

13: bottom wall

112: Insulating cylinder

14, 15, 18, 19: adapter

16: RF power supply

17: pressure ring

2: auxiliary plasma excitation source

21: Coil

22: RF power supply

3: Lining components

31: The first sub-ring body

32: second sub-ring body

301A: First radial through hole

302A: Second radial through hole

33: plane

331, 332: area

34: connecting piece

35: Upper lining

36: Intermediate lining

37: Lower lining

4: Plasma excitation source

5: Support components

6: Deionized water

7: Target

8: Magnetron

9: drive device

10: Pedestal

20: Workpiece to be processed

30: gap

P: area

Through the following description of the embodiments of the present invention with reference to the drawings, the above and other objectives, features and advantages of the present invention will be more clear. In the drawings: Figure 1 is a cross-sectional view of the lining assembly provided by the embodiment of the present invention; Figure 2 Fig. 3 is a partial enlarged view of area P in Fig. 2; Fig. 4 is a sectional structural view of the inner liner assembly provided by an embodiment of the present invention along its axial direction 5 is a plan view of the orthographic projection of the first channel of the gap of the lining assembly provided by the embodiment of the present invention on the inner circumferential surface of the inner lining ring; Sectional view; Figure 7 is a sectional view of another magnetron sputtering physical vapor deposition equipment; Figure 8 is a planar expansion of the orthographic projection of the coils and slits of the reaction chamber provided by an embodiment of the present invention on the outer peripheral surface of the inner ring body picture.

In order to make the objectives, technical solutions, and advantages of the present invention clearer and more comprehensible, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the drawings.

An embodiment of the present invention provides an inner liner assembly. As shown in FIG. 1, the inner liner assembly includes a grounded inner liner ring 3. In this embodiment, the inner liner ring 3 adopts a split structure. It includes two sub-rings nested with each other and with different inner diameters, namely a first sub-ring 31 and a second sub-ring 32 surrounding the first sub-ring 31, the first sub-ring 31 and The second sub-rings 32 are all grounded through the connecting member 34. Moreover, the first sub-ring body 31 and the second sub-ring body 32 are, for example, circular rings, and there is an annular gap between them.

It should be noted that the Z direction in FIG. 1 is the axial direction of each sub-ring body; the X-Y plane is a surface parallel to the radial cross section of each sub-ring body.

2 and 3, the inner lining ring body 3 is provided with a plurality of shielding units spaced along its circumferential direction, and each shielding unit is the inner peripheral surface of the inner lining ring body 3 (that is, the first A gap 30 formed through the inner peripheral surface of one sub-ring 31) and the outer peripheral surface (that is, the outer peripheral surface of the second sub-ring 32), the gap 30 includes a plurality of gaps spaced from the inner peripheral surface to the outer peripheral surface. A first passage and a plurality of second passages connecting two adjacent first passages. In this embodiment, for each slot 30, each first channel is a radial through hole correspondingly provided in each sub-ring body, specifically a plurality of first radial through holes provided in the first sub-ring body 31 301A, and a plurality of second radial through holes 302A provided in the second sub-ring body 32. Each second channel corresponds to an annular gap provided between two adjacent sub-rings, that is, a gap between the outer peripheral surface of the first sub-ring 31 and the inner peripheral surface of the second sub-ring 32. The annular gap can connect the first radial through hole 301A and the second radial through hole 302A, so that the first radial through hole 301A, the annular gap, and the second radial through hole 302A form a radio frequency energy feeder. Into the gap 30.

In this embodiment, FIG. 4 only shows the first radial through hole 301A. As shown in FIG. 4, the shape of each first radial through hole 301A is a long straight through hole, and the length direction is along Z Direction setting, that is, the first radial through hole 301A extends along the axial direction of the first sub-ring body 31, so as to reduce the space occupied by a single radial through hole in the circumferential direction of the sub-ring body, so that it can be on the same sub-ring body. Add more radial through holes. Of course, in practical applications, the length direction may also form an angle with the Z direction. In addition, you can also use Shaped through holes instead of straight through holes, such as tapered holes. The shape and/or size of each second radial through hole 302A may be the same as or different from the first radial through hole 301A.

Optionally, the first radial through hole 301A penetrates through one end of the first sub-ring 31 along the axial direction of the first sub-ring 31.

As shown in FIG. 5, the plane 33 is a plane on which the inner peripheral surface of the lining ring body (that is, the inner peripheral surface of the first sub-ring body 31) is expanded. For each slot 30, the orthographic projections of the two adjacent first channels on the inner circumferential surface of the inner liner ring body (ie, the inner circumferential surface of the first sub-ring body 31) are staggered with each other. Specifically, on the plane 33, the orthographic projection of each first radial through hole 301A (shown by the dashed line in FIG. 5) and the orthographic projection of any second radial through hole 302A (as determined by the implementation in FIG. 5) (Shown) are mutually staggered, so that the gap 30 forms a labyrinth structure. In this way, when the lining assembly is applied to the reaction chamber, the gap 30 can prevent the plasma from passing through the gap 30 by using a labyrinth structure on the basis of ensuring the feeding of radio frequency energy, thereby protecting the side wall of the reaction chamber and avoiding The side wall of the reaction chamber is contaminated.

It should be noted that, in this embodiment, each adjacent two first channels line the inner peripheral surface of the inner ring body 3 (that is, the inner peripheral surface of the first sub-ring body 31 and the expanded surface 33) The orthographic projections are staggered. Wherein, only the inner circumferential surface of the inner lining ring body is used as a reference surface to indicate the positional relationship of each adjacent two first passages. Of course, any other reference surface can also be used, for example, the outer peripheral surface of the lining ring body 3.

It should also be noted that in this embodiment, the inner lining ring body 3 adopts a split structure, that is, it is composed of multiple sub-ring bodies. However, the present invention is not limited to this. In practical applications, the inner lining ring body 3 It is also possible to adopt a monolithic structure, that is, the inner lining ring body 3 is only composed of a single ring body, and for each gap 30, the first channel and the second channel are both arranged in the ring body. In this case, the second channel is no longer an annular gap between two adjacent sub-rings, but a non-annular channel between two adjacent first channels. The non-annular channel is within the guarantee. On the premise that the backing ring body 3 maintains an integrated structure, it only needs to be able to connect two adjacent first channels.

The foregoing is only an exemplary description, and the present embodiment is not limited thereto. The number of sub-rings can be greater than two. The sub-rings are nested with each other and have different inner diameters.

Further referring to Fig. 3, the aspect ratio of each slit 30 satisfies: B/A+C/D>5

Where A is the width of the radial through hole in the circumferential direction of the sub-ring body (take the first radial through hole 301A as an example); B is the radial thickness of the sub-ring body (take the second sub-ring body 32 as an example); C is the center distance between two adjacent radial through holes on the same sub-ring body (take the first radial through hole 301A as an example); D is the radial thickness of the annular gap (the first sub-ring body 31 The radial distance between the outer circumferential surface of the second sub-ring 32 and the inner circumferential surface of the second sub-ring body 32).

Here, the aspect ratio of the slit 30 is defined as B/A+C/D. The aspect ratio determines the ability of the gap 30 to prevent metal atoms from passing through. By making the aspect ratio greater than 5, it can be ensured that the metal atoms can be successfully blocked by the gap 30.

Regarding the radial thickness B of the sub-ring body, since the thicker the sub-ring body is, the heavier the inner ring body 3 will be, and the inner diameter of the reaction chamber will be smaller. Considering this problem, the thickness B can be set as It is less than or equal to 5mm to avoid the lining ring body 3 from being too heavy and the cavity diameter is too small.

Regarding the radial thickness D of the annular gap, since the thickness D is too large, it is easy to cause plasma in the gap between the first sub-ring 31 and the second sub-ring 32. Based on this, the thickness D can be set to be less than 10 mm , In order to reduce the probability of plasma entering the gap between the first sub-ring 31 and the second sub-ring 32.

For the width A of the radial through hole in the circumferential direction of the sub-ring body, the smaller the width A is, the more difficult it is for the metal atoms to pass through. Based on this, the width A can be set to be less than 10 mm, and the minimum can be 0.5 mm.

The center distance C between two adjacent radial through holes on the same sub-ring body is related to the number of radial through holes on the same sub-ring body. The greater the above-mentioned distance C, the deeper the gap 30 The larger the aspect ratio, the more difficult it is for metal atoms to pass through the gap 30. However, the distance C cannot be too large, otherwise the number of radial through holes on the same sub-ring body will be affected. For this reason, the spacing C can be set to be greater than or equal to 2 mm to simultaneously meet the requirements for the passage of barrier metal atoms and the number of radial through holes.

Optionally, the number of slits 30, that is, the number of radial through holes on the same sub-ring body is in the order of tens, preferably not less than 60, so as to ensure sufficient radio frequency energy feeding.

In practical applications, the number of radial through holes on different sub-rings can be the same or different. When the number of radial through holes on different sub-rings is the same, corresponding to two adjacent sub-rings, each of the radial through-holes in one sub-ring is located in the other sub-ring. The center position between two adjacent radial through holes of the through hole. Specifically, as shown in FIG. 3, each first radial through hole 301A on the first sub-ring body 31 is located at two second radial through holes 301A on the second sub-ring body 32 adjacent to the first radial through hole 301A. The center position of the radial through hole 302A. In this way, the paths through which the radio frequency energy passes through the slots 30 can be made the same, and the plurality of slots 30 in the circumferential direction of the inner ring body 3 can be evenly distributed, so as to ensure uniform feeding of radio frequency energy.

Another embodiment of the present invention provides a reaction chamber. As shown in FIG. 6, the reaction chamber includes a chamber body 1, a base 10 arranged in the chamber body 1 for carrying a workpiece 20 to be processed, and In the chamber body 1, the target 7 located above the base 10 and the lining assembly provided in the previous embodiment.

The reaction chamber in this embodiment can be applied to, for example, a magnetron sputtering physical vapor deposition device.

The lining component is arranged around the inner side of the side wall of the chamber body 1 to prevent metal atoms escaping from the target 7 from being deposited on the side wall of the reaction chamber.

In this embodiment, the side wall of the chamber body 1 includes an upper side wall 11, a lower side wall 12, and a bottom wall 13, wherein the upper side wall 11 and the lower side wall 12 are spaced apart in the axial direction of the chamber body 1, and between the two An insulating cylinder 112 is also provided in the room.

The reaction chamber also includes an upper electrode assembly. The upper electrode assembly includes a plasma excitation source 4, a magnetron 8 and a support assembly 5. The plasma excitation source 4 is used to excite the processing gas to generate plasma. The magnetron 8 is connected to the driving device 9. The bottom end of the support assembly 5 fixes the target 7, and the two form a sealed chamber suitable for containing the deionized water 6. The magnetron 8 is located in the sealed chamber and is connected to the driving device 9 outside the sealed chamber. A pressure ring 17 is also provided around the workpiece 20 to be processed for fixing the position of the workpiece 20 to be processed on the base 10. The base 10 also applies radio frequency power through a radio frequency power supply 16. Under the negative bias of the susceptor 10, the plasma can be accelerated to bombard the bottom of the deep hole on the workpiece 20 to be processed, so that a part of the metal deposited at the bottom is deposited on the sidewall of the deep hole to improve the coverage of the sidewall of the deep hole.

In the lining assembly provided in this embodiment, the top end of the first sub-ring body 31 is fixed to the upper side wall 11 through the adapter 15 and is grounded through the upper side wall 11, and the top end of the second sub-ring body 32 is fixed to the upper side wall through the adapter 14. The side wall 11 is grounded through the upper side wall 11. The fixing method of the sub-ring body and the adapter can be screw fixing. The bottom end of the second sub-ring body 32 is bent inwardly and extends to the periphery of the base 10 to prevent metal atoms from being deposited on the bottom wall 13 of the chamber body 1.

Figure 7 shows another reaction chamber, the reaction chamber is provided with an upper lining 35, a middle lining 36 and a lower lining 37, the upper lining 35 and the lower lining 37 are respectively fixed by two adapters 18, 19 On the side wall of the reaction chamber. In order to effectively couple the energy of the coil 21 into the reaction chamber, the middle lining 36 has a gap. In this way, metal atoms can still be deposited on the insulating cylinder 112 of the reaction chamber through the gap of the intermediate lining 36, thereby causing pollution to the side wall of the reaction chamber. At the same time, the middle lining 36 is set to a floating potential, which needs to be isolated from the upper lining 35 and the lower lining 37 by an insulator. Metal atoms will also be deposited on the insulator, causing the insulator to lose its insulating function and reduce the efficiency of coil energy coupling.

Compared with the reaction chamber shown in FIG. 7, the reaction chamber provided in this embodiment can protect the side wall of the reaction chamber by using the above-mentioned lining assembly provided by the present invention. During the production of the reaction chamber, when metal atoms pass through the gaps 30, they will be deposited in the first channel of each gap 30, instead of being deposited on the insulating cylinder on the side wall of the reaction chamber, so as to avoid contamination of the side wall of the reaction chamber. And because of the lining The component is grounded, there is no need to set it to a floating potential, and there is no need to insulate the lining component and other parts. Compared with the multi-stage structure of the lining assembly and the setting of the suspension potential in the prior art, the structure and preparation process of the reaction chamber are simplified, and the equipment cost is saved.

In this embodiment, the coil 21 of the reaction chamber and the radio frequency power supply 22 constitute an auxiliary plasma excitation source. The coil 21 is arranged around the outside of the side wall of the chamber body 1, for example, it may be around the outside of the insulating cylinder 112, and the coil 21 is electrically connected to the radio frequency power supply 22.

In this embodiment, the coil 21 may be formed by winding one or more turns of a spiral coil, and is used to couple the radio frequency power provided by the radio frequency power supply 22 into the chamber body 1 via the insulating cylinder 112. As a part of the chamber body 1, the insulating cylinder 112 is used to achieve a good vacuum degree inside the chamber body 1 and enable the energy emitted by the coil 21 to be coupled into the chamber body 1.

During production, a processing gas such as argon is introduced into the chamber body 1, except that the plasma excitation source 4 of the upper electrode assembly can excite the processing gas to generate plasma, and the energy emitted by the coil 21 is coupled through the insulating cylinder 112 and the lining assembly. Into the chamber body 1, the argon gas is excited to generate a second plasma. Under the negative bias of the susceptor 10, the second plasma accelerates bombardment of the thin film at the bottom of the deep hole on the workpiece 20 to be processed, so that a part of the metal deposited at the bottom of the deep hole is bombarded to the two sidewalls of the deep hole. Improved the coverage of the sidewall of the deep hole.

In this embodiment, since the slits in the lining assembly have the effect of blocking the passage of plasma, the premise of protecting the side wall of the reaction chamber is that a larger number of slits are allowed to be provided, which can greatly reduce The eddy current loss caused by the lining component, even when the lining component includes multiple sub-rings and grounded, can still ensure that the energy emitted by the coil 21 enters the chamber body 1 of the reaction chamber more, increasing the energy Coupling efficiency. And the energy coupling efficiency can be kept unchanged, and the energy coupling efficiency will not decrease with the progress of the production process.

For the lining component in the reaction chamber, the width A of the radial through hole in the circumferential direction of the sub-ring body, and the center distance C between two adjacent radial through holes on the same sub-ring body can be based on the target material material Set different values for different materials. Because different target materials have different viscosity coefficients, the ability to pass through the gap 30 is not the same, and metal atoms with a lower viscosity coefficient are easier to pass through the gap 30 to be deposited on the insulating cylinder 112. Take tantalum (Ta) metal as an example. The viscosity coefficient of tantalum metal is very low. The width A should be less than 2mm, and the spacing C should be greater than 20mm. Compared with tantalum metal, copper metal has a higher viscosity coefficient, so the width A should be less than 5mm, and the spacing C should be greater than 10mm.

In this embodiment, the material of the lining component may be a metal material such as aluminum (Al) or stainless steel. As shown in FIG. 8, the plane 33 is a plane on which the inner circumferential surface of the inner ring body (that is, the inner circumferential surface of the first sub-ring body 31) is expanded. The orthographic projection of the coil 21 on the plane 33 is located in the area 332, and the first radial through hole 301A in the first sub-ring body 31 and the second radial through hole 302A in the second sub-ring body 32 are on the plane 33 The orthographic projection of is located in area 331. Wherein, the length of each radial through hole in the axial direction of each sub-ring body is greater than the axial length of the coil 21, and the orthographic projection of the coil 21 on the plane 33 is located on the axial direction of each radial through hole in each sub-ring body. Between the ends. In this way, the eddy current loss caused by the lining assembly can be reduced, and the energy coupling efficiency can be improved.

The foregoing is only an exemplary description, and the present embodiment is not limited thereto. When the number of linings included in the lining assembly of the reaction chamber is greater than two, these linings are all fixed to the upper cylinder through a corresponding adapter to be grounded.

Another embodiment of the present invention provides a semiconductor processing equipment. The semiconductor processing equipment may be, for example, a magnetron sputtering physical vapor deposition equipment. The semiconductor processing equipment includes the reaction chamber of the above-mentioned embodiment for Cu, Ta, Ti , Al and other materials and film preparation.

It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only directions for referring to the drawings, not It is used to limit the protection scope of the present invention. Throughout the schema, the same elements are represented by the same or similar schema symbols. When it may cause confusion in the understanding of the present invention, conventional structures or configurations will be omitted.

In addition, the shape and size of each component in the figure do not reflect the actual size and proportion, but merely illustrate the content of the embodiment of the present invention. In addition, in the request item, any reference symbols located between parentheses should not be constructed as a restriction on the request item.

Unless there is a well-known meaning to the contrary, the numerical parameters in this specification and the appended claims are approximate values and can be changed according to the required characteristics obtained through the content of the present invention. Specifically, all the numbers used in the specification and claims to indicate the content of the composition, the reaction conditions, etc., should be understood as being modified by the term "about" in all cases. In general, the meaning of its expression refers to a change of ±10% in some embodiments, a change of ±5% in some embodiments, a change of ±1% in some embodiments, and a change of ±1% in some embodiments. In the example, a change of ±0.5%.

Furthermore, the word "include" does not exclude the existence of elements or steps that are not listed in the request item. The word "a" or "an" preceding an element does not exclude the presence of multiple such elements.

The ordinal numbers used in the specification and claims, such as the terms "first", "second", "third", etc., are used to modify the corresponding elements. They themselves do not imply and represent that the element has any ordinal numbers. It does not represent the order of a certain element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only used to clearly distinguish one element with a certain name from another element with the same name.

Similarly, it should be understood that in order to simplify the present invention and help understand one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment. , Figure, or its description. However, the disclosed method should not be interpreted as reflecting the intention that the claimed invention requires more features than those explicitly recorded in each claim. More precisely, as reflected in the following claims, the disclosure aspect lies in less than all the features of a single embodiment disclosed above. Therefore, the claims following the specific implementation are thus clearly incorporated into the specific implementation, wherein each claim itself serves as a separate embodiment of the present invention.

The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in further detail. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Within the spirit and principle of the present invention, any modification, equivalent replacement, improvement, etc., shall be included in the protection scope of the present invention.

1: Chamber body

11: Upper side wall

12: Lower side wall

13: bottom wall

112: Insulating cylinder

14, 15: adapter

16: RF power supply

17: pressure ring

2: auxiliary plasma excitation source

21: Coil

22: RF power supply

3: Lining components

31: The first sub-ring body

32: second sub-ring body

4: Plasma excitation source

5: Support components

6: Deionized water

7: Target

8: Magnetron

9: drive device

10: Pedestal

20: Workpiece to be processed

Claims (16)

An inner liner assembly, characterized by comprising: a grounded inner liner ring body, in which a plurality of shield units are arranged at intervals along the circumference of the inner liner ring body, and each of the shield units is in place A gap formed between the inner circumferential surface and the outer circumferential surface of the lining ring body, the gap including a plurality of first channels spaced apart from the inner circumferential surface in the direction of the outer circumferential surface and communicating with two adjacent ones each A plurality of second channels of the first channel; wherein the orthographic projections of the two adjacent first channels on the inner circumferential surface of the inner liner ring body are staggered, and the gaps form a labyrinth structure, So as to protect the side wall of the reaction chamber. The lining assembly according to claim 1, wherein the lining ring body includes at least two sub-ring bodies nested with each other and having different inner diameters, and each of the sub-ring bodies is grounded; for each of the gaps Each of the first channels is a radial through hole correspondingly arranged in each of the sub-rings; each of the second channels is an annular gap correspondingly arranged between each of the two adjacent sub-rings. The liner assembly according to claim 2, wherein the aspect ratio of each of the gaps is satisfied: B/A+C/D>5, where A is the radial through hole in the circumference of the sub-ring body The upward width; B is the radial thickness of the sub-ring body; C is the center distance between two adjacent radial through holes on the same sub-ring body; D is the annular gap Radial thickness. The lining assembly according to claim 2, wherein the center distance between each two adjacent radial through holes on the same sub-ring body is greater than or equal to 2 mm. The liner component according to claim 2, wherein the radial thickness of the sub-ring body is less than or equal to 5 mm. The liner assembly according to claim 2, wherein the radial thickness of the annular gap is less than 10 mm. The liner assembly according to claim 2, wherein the width of the radial through hole in the circumferential direction of the sub-ring body is 0.5 mm to 10 mm. The lining component according to any one of claims 1-7, wherein the number of the slits is in the order of tens. The liner component according to claim 8, wherein the number of the slits is greater than or equal to 60. The lining component according to claim 2, wherein each of the two adjacent sub-ring bodies corresponds to each of the two adjacent sub-ring bodies, and each of the radial through holes in one of the sub-ring bodies is located in the other sub-ring body The center position between two radial through holes adjacent to the radial through hole. The liner assembly according to claim 2, wherein each of the radial through holes extends along the axial direction of the sub-ring body. The liner assembly according to claim 11, wherein each of the radial through holes penetrates the sub-ring body along the axial direction of the sub-ring body. A reaction chamber includes a chamber body, which further includes: a base, which is arranged in the chamber body, and is used to carry a workpiece to be processed; and a target material is arranged in the chamber body and is located in the chamber body. Above the base; the lining component according to any one of claims 1 to 12, the lining component is arranged around the inner side of the side wall of the chamber body. The reaction chamber according to claim 13, further comprising: a coil arranged around the side wall of the chamber body; and a radio frequency power supply electrically connected to the coil. The reaction chamber according to claim 14, wherein the length of each of the gaps in the axial direction of the lining ring body is greater than the axial length of the coil, and the coil is in the axial direction of the lining ring body The orthographic projections on the outer peripheral surface are all located between the two ends of the gap in the axial direction of the inner liner ring body. A semiconductor processing equipment, comprising the reaction chamber according to any one of claims 13 to 15.

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