CN109273342A - Liner Components, reaction chamber and semiconductor processing equipment - Google Patents
Liner Components, reaction chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN109273342A CN109273342A CN201811305127.9A CN201811305127A CN109273342A CN 109273342 A CN109273342 A CN 109273342A CN 201811305127 A CN201811305127 A CN 201811305127A CN 109273342 A CN109273342 A CN 109273342A
- Authority
- CN
- China
- Prior art keywords
- liner
- gap
- reaction chamber
- layers
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 69
- 239000004065 semiconductor Substances 0.000 title claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
Abstract
Present disclose provides a kind of Liner Components, it include: at least two layers of the liner being arranged, at least two layers of the liner ground connection, every layer of liner offers multiple gaps along its circumferential direction, for two layers of liner of arbitrary neighborhood at least two layers of liner, wherein the multiple gap of one layer of liner is not be overlapped in the projection of the plane with the multiple gap of wherein another layer of liner in the projection of a plane, and the plane is the wherein plane where one layer of liner axis in the adjacent two layers liner.
Description
Technical field
The disclosure belongs to field of semiconductor processing, relates more specifically to a kind of Liner Components, reaction chamber and semiconductor and adds
Construction equipment.
Background technique
Magnetron sputtering Pvd equipment includes reaction chamber.The pedestal of reaction chamber carries workpiece to be processed.Target
Material is sealed in reaction chamber top.Support component and target form seal cavity, are filled with deionized water.When technique, sealing
Magnetron in cavity scans target, and process gas is filled with into reaction chamber, and process gas is excited to generate plasma.Deng from
Target is bombarded in daughter, while metallic atom is deposited on workpiece to be processed, can also be deposited on reaction chamber side wall, cause reaction chamber
Room is contaminated, influences service life and the use cost of reaction chamber.
Summary of the invention
According to one aspect of the disclosure, a kind of Liner Components are provided, comprising: at least two layers of the liner being arranged, it is described
At least two layers of liner ground connection, every layer of liner offers multiple gaps along its circumferential direction, for any at least two layers of liner
Adjacent two layers liner, wherein the multiple gap of one layer of liner a plane projection and wherein another layer of liner it is described more
A gap is not overlapped in the projection of the plane, and the plane is in the adjacent two layers liner wherein where one layer of liner axis
Plane.
In some embodiments of the present disclosure, two layers of liner of the arbitrary neighborhood includes: the first liner and the second liner,
The multiple gap of first liner is the first gap, and the multiple gap of second liner is the second gap；
Any one described first gap, second gap adjacent with any one described described first gap and described
Between one liner and second liner and it is located at any one described described first gap and adjacent one described second described
Gap between gap constitutes a screen unit.
In some embodiments of the present disclosure, the depth-to-width ratio of the screen unit is B/A+C/D, and the depth-to-width ratio is greater than 5,
Wherein, A is that first gap is circumferential in second liner in the width of the first liner circumferential direction or second gap
Width；B is the thickness of the first liner radial direction or the thickness of the second liner radial direction；C is two neighboring first gap
The first liner circumferential direction distance or two neighboring second gap the second liner circumferential direction distance；D is described
First liner and second liner are first liner is radial or the spacing of the second liner radial direction.
In some embodiments of the present disclosure, two neighboring first gap the first liner circumferential direction distance with
And two neighboring second gap is not less than 2mm in the distance of the second liner circumferential direction.
In some embodiments of the present disclosure, the thickness of the thickness of the first liner radial direction and the second liner radial direction
It is 5mm.
In some embodiments of the present disclosure, the radial spacing between first liner and second liner is less than
10mm。
In some embodiments of the present disclosure, the peripheral width in the circumferential width in first gap and second gap
Spending range is 0.5mm to 10mm.
In some embodiments of the present disclosure, the quantity in the quantity in first gap and second gap is tens of
Magnitude.
In some embodiments of the present disclosure, the quantity in the quantity in first gap and second gap is not less than
60。
In some embodiments of the present disclosure, the quantity in first gap is identical as the quantity in second gap.
In some embodiments of the present disclosure, first gap is located at adjacent with first gap two described the
The center in two gaps.
In some embodiments of the present disclosure, first gap is axially extending and/or described along first liner
Two gaps are axially extending along second liner.
A kind of reaction chamber another aspect of the present disclosure provides, comprising: pedestal, for carrying generation processing work
Part；Target is arranged in the upper space of the reaction chamber；Above-mentioned Liner Components, the Liner Components are set to described
The reaction chamber side wall below target, more than the pedestal, to prevent the target material deposition to the reaction chamber side wall.
In some embodiments of the present disclosure, above-mentioned reaction chamber further includes coil, surround and is coupled in the target and institute
State the reaction chamber side wall between pedestal, wherein the coil is coupled with radio-frequency power supply.
In some embodiments of the present disclosure, the multiple gap of two layers of liner of the arbitrary neighborhood is in the plane
The height of view field is all larger than the coil in the height of the view field of the plane, and the height is in any phase
The wherein length of one layer of liner axis direction in adjacent two layers of liner.
According to disclosed another aspect, a kind of semiconductor processing equipment is provided, including above-mentioned reaction chamber.
By the way that the Liner Components of at least two layers liner are arranged, and the gap of liner is mutually staggered to form screen unit, when
When Liner Components are applied to reaction chamber, screen unit can play a protective role to reaction chamber side wall.When reaction chamber technique,
Metallic atom is deposited in screen unit, without being deposited on reaction chamber side wall, to avoid reaction chamber side wall contaminated.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present disclosure, the above-mentioned and other purposes of the disclosure, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the structural schematic diagram of the Liner Components of the embodiment of the present disclosure；
Fig. 2 is the Liner Components of the embodiment of the present disclosure perpendicular to its axial sectional structure chart；
Fig. 3 is the Liner Components of the embodiment of the present disclosure along its axial sectional structure chart；
The first gap and the second gap that Fig. 4 is embodiment of the present disclosure Liner Components are in the throwing along plane where its axis
Shadow；
Fig. 5 is the partial enlarged view of region P in Fig. 2；
Fig. 6 is the structural schematic diagram of the reaction chamber of the embodiment of the present disclosure.
Fig. 7 is the structural schematic diagram of another magnetron sputtering Pvd equipment.
Fig. 8 is the coil of embodiment of the present disclosure reaction chamber, the first gap and the second gap along plane where its axis
Projection.
Symbol description
1- chamber body；11- side wall；12- bottom wall；111- upper shell；112- middle cylinder；113- lower shell；13,14,
18,19-- adapter；
2- auxiliary plasma driving source；21- coil；22- radio-frequency power supply；
3- Liner Components；The first liner of 31-；The second liner of 32-；The first gap 301A-, the second gap 302A-；30- screen
Cover unit；33- plane；331,332- view field；34- connector；The upper liner of 35-；Liner among 36-；37- lower liner；
4- plasma excitation source；5- support component；6- deionized water；7- target；8- magnetron；9- driving device；10-
Pedestal；15- workpiece to be processed；16- radio-frequency power supply；17- pressure ring；The region P-.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Attached drawing is described in further detail the disclosure.
One embodiment of the disclosure provides a kind of Liner Components, as shown in Figure 1, the Liner Components 3 include two be arranged
Layer liner: the first liner 31 and the second liner 32, the first liner 31 and the second liner 32 are grounded by connector 34.
With further reference to Fig. 2, the first liner 31 and the second liner 32 are axially symmetric structure, the second liner 32 perpendicular to
The area that the profile of its axial cross section is surrounded is greater than the first liner 31, to be sheathed on 31 periphery of the first liner, and
There are gaps between first liner 31 and the second liner 32.Axially symmetric structure for example can be cylinder.
First liner 31 offers multiple first gap 301A, and the first gap 301A is axially extending along the first liner.Second
Liner 32 offers multiple second gap 302A, and the second gap 302A is axially extending along the second liner.First liner is axial and the
Two liners are axially along Fig. 1 and the direction z shown in Fig. 3, shape such as Fig. 3 institute of the first gap 301A and the second gap 302A
Show.Since Fig. 3 is cross-sectional view, the first gap 301A of the first liner 31 is illustrated only.
Referring to fig. 4, projection and second gap of second liner 32 of the first gap 301A of the first liner 31 in plane 33
302A is not overlapped in the projection of plane 33, is mutually staggered.The plane 33 is the axis place of the first liner 31 or the second liner 32
Plane, x/y plane of the plane 33 perpendicular to Fig. 2.
For first gap 301A of either one or two of first liner 31, the second liner 32 there are two the second gap 302A and this
One gap 301A is adjacent.First gap 301A, one of them adjacent second gap 302A and be located at first gap
Gap between one of them 301A adjacent with this second gap 302A constitutes a screen unit 30.First liner 31 and
Two liners 32 are formed with multiple above-mentioned screen units 30.
The Liner Components 3 of the present embodiment are provided with two layers of liner, and the gap of two layers of liner is in the projection phase of plane 33
Mutually it is staggered to form screen unit 30.When Liner Components 3 are applied to reaction chamber, screen unit 30 can be to reaction chamber side wall
It plays a protective role.When reaction chamber technique, metallic atom can be deposited in screen unit 30, without being deposited on reaction chamber
Side wall, to avoid reaction chamber side wall contaminated.
Only exemplary illustration, the present embodiment are not limited to this above.The liner quantity of Liner Components 3 can be greater than two.
For these liners, every layer of liner offers multiple gaps along its circumferential direction.For two layers of liner of arbitrary neighborhood in these liners,
Will wherein one layer of liner is as the first liner, another layer of liner is as the second liner, then multiple first gaps of the first liner exist
The projection of above-mentioned plane 33 is not also be overlapped in the projection of above-mentioned plane 33 with multiple second gaps of the second liner.
With further reference to shown in Fig. 5, partial enlargement has been carried out to the region P in Fig. 2.First gap 301A is in the first liner
31 circumferential width are A, and the second liner 32 is radial with a thickness of B, and two neighboring first gap 301A was at the first liner 31 weeks
To distance be C, the first liner 31 and the second liner 32 in the first liner 31 or 32 radial spacing of the second liner be D, then shield
The depth-to-width ratio of unit 30 is defined as B/A+C/D.The depth-to-width ratio determines the ability that screen unit 30 prevents metallic atom from passing through, and is
Ensure that metallic atom can be shielded by screen unit 30, which should be greater than 5.
For the second liner 32 in radial thickness B, due to the thicker meeting of liner so that liner is heavier, and reaction chamber can be made
Indoor diameter is smaller, and usual thickness B is 5mm.For the first liner 31 and the second liner 32 in the first liner 31 or the second liner 32
Radial spacing D, excessive will lead to of radial spacing D generate plasma between the first liner 31 and the second liner 32, usually should
Radial spacing D is less than 10mm.It in the circumferential width of the first liner 31 is A, the smaller then metal of width A for the first gap 301A
Atom is more difficult to across width A is generally less than 10mm, and minimum can arrive 0.5mm.Exist for two neighboring first gap 301A
The circumferential distance C of first liner 31 is related to the number of the first gap 301A.Distance C is bigger, then depth-to-width ratio is bigger, and metal is former
Son is more difficult to across screen unit 30.But distance C will affect the quantity of the first gap 301A when excessive, so distance C's sets
The requirement that meet simultaneously to the first gap 301A quantity is set, 2mm should be not less than.
The quantity of first gap 301A and the 302A quantity in the second gap are tens of magnitudes, preferably not less than 60.First
The quantity of gap 301A and the second gap 302A can be identical or different.When the quantity of the first gap 301A and the second gap 302A
When identical, as shown in Figure 4 and Figure 5, the first gap 301A of the first liner 31 is in two neighboring second with the first liner 31
The center of gap 302A, i.e. the first gap 301A are located at two neighboring second gap 302A in plane in the projection of plane 33
The center of 33 projections.
Foregoing exemplary explanation, for the depth-to-width ratio of screen unit 30, A can also be the second gap 302A in the second liner
32 circumferential width, B can also be the first liner 31 in radial thickness, and C can also be that two neighboring second gap 302A exists
The circumferential distance of second liner 32.
The screen unit 30 for meeting above-mentioned depth-to-width ratio may insure to shield metallic atom, can play to reaction chamber side wall
Protective effect, to avoid reaction chamber side wall contaminated.
Another embodiment of the present disclosure provides a kind of reaction chamber, as shown in fig. 6, the reaction chamber include pedestal 10,
The Liner Components 3 of target 7 and a upper embodiment.
Reaction chamber for example can be applied to magnetron sputtering Pvd equipment in the present embodiment.Target 7 is set to
In the upper space of reaction chamber, pedestal 10 is set to inside reaction chamber, for carrying workpiece to be processed.Liner Components 3 are then
It is set to the reaction chamber side wall of 7 or less target, 10 or more pedestal, for preventing the deposition of target 7 to reaction chamber side wall.
Reaction chamber further includes chamber body 1.Chamber body 1 includes side wall 11 and bottom wall 12, and side wall 11 includes upper shell
111, lower shell 113 and the middle cylinder 112 between upper shell 111 and lower shell 113.Middle cylinder 112 is to use
The insulating cylinder of insulating materials.
Reaction chamber further includes top electrode assembly.The top electrode assembly includes plasma excitation source 4, magnetron 8 and branch
Support component 5.Plasma excitation source 4 is for motivating process gas to generate plasma.Magnetron 8 connects driving device 9.Support
Target 7 is fixed in 5 bottom end of component, and the two forms the sealed chamber for being suitable for accommodating deionized water 6.Magnetron 8 is located at the sealed chamber
In, and connect the driving device 9 outside sealed chamber.The surrounding of workpiece to be processed 15 is additionally provided with pressure ring 17, to be added for fixing
Position of the work workpiece 15 on pedestal 10.Pedestal 10 also applies radio-frequency power by a radio-frequency power supply 16.In the negative bias of pedestal 10
Under pressure effect, plasma can be made to accelerate bombardment workpiece to be processed deep hole bottom, a part of metal for keeping bottom deposited is heavy
Product arrives deep hole side wall, to improve deep hole sidewall coverage.
Liner Components 3 include the first liner 31 and the second liner 32.First liner, 31 top is fixed on by adapter 13
Upper shell 111 and be grounded, 32 top of the second liner by adapter 14 be fixed on upper shell 111 be grounded.Fixed form can be with
It is that screw is fixed.The bottom end of second liner 32 extends to pedestal 10, to prevent metallic atom from depositing to chamber body bottom wall 12.
Fig. 7 shows another reaction chamber, and liner 35, intermediate liner 36 and lower liner are provided in the reaction chamber
37, upper liner 35 and lower liner 37 are fixed on reaction chamber side wall by adapter 18,19 respectively.To there is the energy of coil 21
Effect is coupled into reaction chamber, and intermediate liner 36 is provided with gap.So, metallic atom still can pass through intermediate liner 36
Gap deposits on the middle cylinder 23 of reaction chamber, to cause pollution to the side wall of reaction chamber.Meanwhile intermediate liner
36 are set as floating potential, need to be completely cut off by insulator and upper liner 35 and lower liner 37.Metallic atom can also sink
In product to insulator, insulator is caused to lose insulation function, makes the reduction of coil energy coupling efficiency.
Relative to reaction chamber shown in Fig. 7, two layers of liner of the present embodiment reaction chamber plays reaction chamber side wall
Protective effect.When reaction chamber technique, when metallic atom passes through screen unit 30, the first gap of screen unit 30 can be deposited on
In 301A, the second gap 302A and gap, without being deposited on the middle cylinder of reaction chamber side wall, to avoid reaction chamber
Room side wall is contaminated.And since Liner Components 3 are grounded, without being set to floating potential, without to the Liner Components 3
Insulation processing is carried out with other component.The setting of the Liner Components and floating potential of middle multi-segment structure compared with the existing technology,
The structure and preparation process for simplifying reaction chamber, save equipment cost.
The coil 21 and radio-frequency power supply 22 of reaction chamber constitute an auxiliary plasma driving source.Coil 21 surround and is coupled in
Reaction chamber side wall 11 between target 7 and pedestal 10 specifically for example can be and be surrounded on 112 outside of middle cylinder, and coil
21 couple with radio-frequency power supply 22.
The coil 21 of the present embodiment can be wound by a circle or multiturn spiral coil, for mentioning radio-frequency power supply 22
The radio-frequency power of confession is coupled in chamber body 1 through middle cylinder 112.The a part of middle cylinder 112 as cavity body 1,
For realizing the 1 good vacuum degree in inside of chamber body, and the energy for issuing coil 21 is coupled in chamber body 1.
The process gas of such as argon gas is passed through when technique in chamber body 1, except the plasma excitation source 4 of top electrode assembly
Process gas can be motivated to generate outside plasma, the energy that coil 21 issues is coupled to chamber through middle cylinder 112, Liner Components 3
In room ontology 1, excitation argon gas generates the second plasma.Under the back bias voltage effect of pedestal 2, the second plasma accelerates bombardment
The film of 15 deep hole bottom of workpiece to be processed, two sides of a part of metal deposit for keeping deep hole bottom deposited to deep hole
Wall which thereby enhances the coverage rate of deep hole side wall.
The Liner Components 3 of the present embodiment have a fairly large number of gap, this can greatly reduce Liner Components bring whirlpool
Stream loss, even if still can ensure that the energy that coil 21 issues in the case where Liner Components 3 include two layers of liner and ground connection
More enter in the chamber body 1 of reaction chamber, improves energy coupling efficiency.And energy coupling efficiency can be kept not
Become, is not in the case where energy coupling efficiency declines with the progress of technical process.
For the Liner Components 3 in reaction chamber, width and second the first gap 301A circumferential in the first liner 31
Gap 302A the second liner 32 circumferential width A, two neighboring first gap 301A the circumferential distance of the first liner 31, with
And two neighboring second gap 302A is different according to the difference of target material in the circumferential distance C of the second liner 32.Because no
It is different with the coefficient of viscosity of material target, therefore the ability for passing through screen unit is not identical, the lower metal of the coefficient of viscosity is former
Son is relatively easy to across screen unit to deposition to middle cylinder.By taking tantalum (Ta) metal as an example, the coefficient of viscosity of tantalum metal is very
Low, width A should be less than 2mm, and distance C should be greater than 20mm.With tantalum metal phase ratio, the coefficient of viscosity of copper metal is higher, therefore width A
It should be less than 5mm, distance C should be greater than 10mm.
In the present embodiment, the material of Liner Components 3 can be Al or stainless steel and other metal materials.As shown in figure 8, line
Circle 21 is the first gap 301A of the first liner 31 and the second gap 302A of the second liner 32 in the view field 332 of plane 33
In the subset of the view field 331 of plane 33, along 32 axis direction of the first liner 31 and the second liner, view field 331
Height be greater than the height of view field 332 and improve energy coupling efficiency to reduce 3 bring eddy-current loss of Liner Components.
Only exemplary illustration, the present embodiment are not limited to this above.When the liner that the Liner Components 3 of reaction chamber include
When quantity is greater than two, these liners are fixed on upper shell by corresponding adapter and are grounded.
The another embodiment of the disclosure provides a kind of semiconductor processing equipment, which for example can be magnetic
Control sputtering Pvd equipment, which includes the reaction chamber of above-described embodiment, for Cu, Ta, Ti,
The materials such as Al and the preparation of film etc..
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself simultaneously unexpectedly contains and represents the element and have any ordinal number, does not also represent a certain element and another element
Sequence or manufacturing method on sequence, the use of those ordinal numbers is only used to enable the element and separately with certain name
One element with identical name can make clear differentiation.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (16)
1. a kind of Liner Components, wherein include:
At least two layers of the liner being arranged, at least two layers of the liner ground connection, every layer of liner offers multiple gaps along its circumferential direction, right
Two layers of liner of arbitrary neighborhood at least two layers of liner, wherein throwing of the multiple gap of one layer of liner in a plane
Shadow and the multiple gap of wherein another layer of liner be not be overlapped in the projection of the plane, and the plane is the adjacent two layers
The wherein plane where one layer of liner axis in liner.
2. Liner Components according to claim 1, wherein two layers of liner of the arbitrary neighborhood include:
First liner, the multiple gap of first liner are the first gap；And
Second liner, the multiple gap of second liner are the second gap；
Any one described first gap, second gap, a Yi Jisuo adjacent with any one described described first gap
State between the first liner and second liner and be located at any one described described first gap and it is adjacent one described described in
Gap between second gap constitutes a screen unit.
3. Liner Components according to claim 2, wherein the depth-to-width ratio of the screen unit is B/A+C/D, described deep wide
Than being greater than 5, wherein A is for first gap in the width of the first liner circumferential direction or second gap described second
The width of liner circumferential direction；B is the thickness of the first liner radial direction or the thickness of the second liner radial direction；C is two neighboring
First gap the first liner circumferential direction distance or two neighboring second gap second liner it is circumferential away from
From；D is first liner and second liner first liner is radial or the spacing of the second liner radial direction.
4. Liner Components according to claim 2, wherein two neighboring first gap is circumferential in first liner
Distance and two neighboring second gap in the distance of the second liner circumferential direction be not less than 2mm.
5. Liner Components according to claim 2, wherein the thickness and the second liner diameter of the first liner radial direction
To thickness be 5mm.
6. Liner Components according to claim 2, wherein between the radial direction between first liner and second liner
Away from less than 10mm.
7. Liner Components according to claim 2, wherein the circumferential width in first gap and second gap
Circumferential width range be 0.5mm to 10mm.
8. Liner Components according to claim 2, wherein the quantity of the quantity in first gap and second gap
It is tens of magnitudes.
9. Liner Components according to claim 8, wherein the quantity of the quantity in first gap and second gap
It is not less than 60.
10. Liner Components according to claim 8, wherein the number of the quantity in first gap and second gap
It measures identical.
11. Liner Components according to claim 10, wherein first gap is located at adjacent with first gap
The center in two second gaps.
12. Liner Components according to claim 2, wherein first gap is axially extending along first liner,
And/or second gap is axially extending along second liner.
13. a kind of reaction chamber, wherein include:
Pedestal, for carrying workpiece to be processed；
Target is arranged in the upper space of the reaction chamber；
According to claim 1, Liner Components described in any one of -12, the Liner Components are set to the target or less, institute
The reaction chamber side wall of pedestal or more is stated, to prevent the target material deposition to the reaction chamber side wall.
14. reaction chamber according to claim 13, wherein further include:
Coil, around being coupled in the reaction chamber side wall between the target and the pedestal, wherein the coil with penetrate
Frequency power coupling.
15. reaction chamber according to claim 13, wherein the multiple gap of two layers of liner of the arbitrary neighborhood exists
The height of the view field of the plane is all larger than the coil in the height of the view field of the plane, the height be
The wherein length of one layer of liner axis direction in two layers of liner of the arbitrary neighborhood.
16. a kind of semiconductor processing equipment, including reaction chamber described according to claim 1 any one of 3 to 15.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811305127.9A CN109273342A (en) | 2018-11-02 | 2018-11-02 | Liner Components, reaction chamber and semiconductor processing equipment |
| KR1020217011672A KR102473872B1 (en) | 2018-11-02 | 2019-10-28 | Lining assemblies, reaction chambers and semiconductor processing devices |
| JP2021523590A JP7295946B2 (en) | 2018-11-02 | 2019-10-28 | Liner assemblies, reaction chambers and semiconductor processing equipment |
| PCT/CN2019/113723 WO2020088413A1 (en) | 2018-11-02 | 2019-10-28 | Liner assembly, reaction chamber and semiconductor processing apparatus |
| SG11202104119PA SG11202104119PA (en) | 2018-11-02 | 2019-10-28 | Liner assembly, reaction chamber and semiconductor processing apparatus |
| TW108139761A TWI739194B (en) | 2018-11-02 | 2019-11-01 | Lining components, reaction chambers and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811305127.9A CN109273342A (en) | 2018-11-02 | 2018-11-02 | Liner Components, reaction chamber and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109273342A true CN109273342A (en) | 2019-01-25 |
Family
ID=65191747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811305127.9A Pending CN109273342A (en) | 2018-11-02 | 2018-11-02 | Liner Components, reaction chamber and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109273342A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048396A (en) * | 2019-12-26 | 2020-04-21 | 北京北方华创微电子装备有限公司 | Method for cleaning dielectric window of semiconductor device and related semiconductor processing device |
| WO2020088413A1 (en) * | 2018-11-02 | 2020-05-07 | 北京北方华创微电子装备有限公司 | Liner assembly, reaction chamber and semiconductor processing apparatus |
| WO2022057847A1 (en) * | 2020-09-17 | 2022-03-24 | 北京北方华创微电子装备有限公司 | Collection assembly and semiconductor precleaning chamber |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1055983A (en) * | 1996-03-12 | 1998-02-24 | Varian Assoc Inc | Inductively coupled plasma reactor having faraday sputter shield |
| CN1333917A (en) * | 1998-09-30 | 2002-01-30 | 拉姆研究公司 | Chamber liner for semiconductor process chambers |
| CN101373702A (en) * | 2007-08-24 | 2009-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cavity inner lining and reaction cavity |
| CN101399197A (en) * | 2007-09-30 | 2009-04-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
| CN107437490A (en) * | 2016-05-25 | 2017-12-05 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN209133451U (en) * | 2018-11-02 | 2019-07-19 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
-
2018
- 2018-11-02 CN CN201811305127.9A patent/CN109273342A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1055983A (en) * | 1996-03-12 | 1998-02-24 | Varian Assoc Inc | Inductively coupled plasma reactor having faraday sputter shield |
| CN1333917A (en) * | 1998-09-30 | 2002-01-30 | 拉姆研究公司 | Chamber liner for semiconductor process chambers |
| CN101373702A (en) * | 2007-08-24 | 2009-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cavity inner lining and reaction cavity |
| CN101399197A (en) * | 2007-09-30 | 2009-04-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
| CN107437490A (en) * | 2016-05-25 | 2017-12-05 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN209133451U (en) * | 2018-11-02 | 2019-07-19 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020088413A1 (en) * | 2018-11-02 | 2020-05-07 | 北京北方华创微电子装备有限公司 | Liner assembly, reaction chamber and semiconductor processing apparatus |
| CN111048396A (en) * | 2019-12-26 | 2020-04-21 | 北京北方华创微电子装备有限公司 | Method for cleaning dielectric window of semiconductor device and related semiconductor processing device |
| WO2022057847A1 (en) * | 2020-09-17 | 2022-03-24 | 北京北方华创微电子装备有限公司 | Collection assembly and semiconductor precleaning chamber |
| JP7428853B2 (en) | 2020-09-17 | 2024-02-06 | 北京北方華創微電子装備有限公司 | Collection unit and semiconductor pre-cleaning chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209133451U (en) | Liner Components, reaction chamber and semiconductor processing equipment | |
| US8028655B2 (en) | Plasma processing system with locally-efficient inductive plasma coupling | |
| US6254745B1 (en) | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source | |
| KR101456810B1 (en) | Plasma processing apparatus | |
| US9812303B2 (en) | Configurable variable position closed track magnetron | |
| CN109273342A (en) | Liner Components, reaction chamber and semiconductor processing equipment | |
| US4132613A (en) | Glow discharge method and apparatus | |
| WO2006007228A1 (en) | Internal antennae for plasma processing with metal plasma | |
| JP4741574B2 (en) | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition | |
| KR102186535B1 (en) | Wafer processing deposition shielding components | |
| JP4945566B2 (en) | Capacitively coupled magnetic neutral plasma sputtering system | |
| US9249500B2 (en) | PVD RF DC open/closed loop selectable magnetron | |
| WO2000052734A1 (en) | Method and apparatus for ionized physical vapor deposition | |
| JPH11106912A (en) | Powered shield source for high density plasma | |
| JP7295946B2 (en) | Liner assemblies, reaction chambers and semiconductor processing equipment | |
| CN109686645A (en) | A kind of RF discharge system and its Faraday shield configuration | |
| WO2023111650A1 (en) | Target made of magnetic material for magnetron sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |