CN107437490A - Liner, reaction chamber and semiconductor processing equipment - Google Patents
Liner, reaction chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN107437490A CN107437490A CN201610351839.9A CN201610351839A CN107437490A CN 107437490 A CN107437490 A CN 107437490A CN 201610351839 A CN201610351839 A CN 201610351839A CN 107437490 A CN107437490 A CN 107437490A
- Authority
- CN
- China
- Prior art keywords
- liner
- reaction chamber
- wall
- confinement layer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of liner, reaction chamber and semiconductor processing equipment, and the side wall and bottom chamber locular wall for protecting reaction chamber are not grounded by plasma etching, bottom chamber locular wall.Liner includes liner body, toroidal confinement layer and annular ground plane, wherein, toroidal confinement layer is circumferentially positioned on the madial wall of liner body, and is less than and close to the process station that technique is carried out to workpiece to be machined, to by plasma confinement where process station on plane；Annular ground plane is circumferentially positioned on the madial wall of liner body, and positioned at the lower end of the madial wall, and the lower surface of annular ground plane and the upper surface of bottom chamber locular wall fit, with realize the two conduct and heat transfer.Liner provided by the invention, it can not only avoid the waste of energy of plasma, and can ensure the ground connection performance and heat conductivility of liner, thereby may be ensured that process results.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular it relates to a kind of liner, anti-
Answer chamber and semiconductor processing equipment.
Background technology
During semiconductor processes etching technics, the optimization design of chamber interior structure is to equipment
The processing performance and etching result of itself have conclusive effect.At present, it is typically employed in chamber
The method of inside increase liner constrains plasma, and protects chamber madial wall and bottom chamber locular wall
Not by plasma etching, while also help the regular maintenance of simplified chamber.
In a kind of existing reaction chamber, liner is surrounded with reaction chamber, and
The chuck for bearing wafer is provided with reaction chamber and on the inside of the liner.Wherein,
The liner includes ring body, and the ring body is circumferentially positioned at the inside sidewalls of reaction chamber, and
Lower end in ring body is provided with annular slab, the annular slab is respectively overlay in the bottom of reaction chamber
On the periphery wall of portion's chamber wall and chuck, to protect the bottom chamber locular wall of reaction chamber and chuck
Periphery wall is not by plasma etching.In addition, the bottom chamber locular wall ground connection of reaction chamber, annular slab
By being in contact with bottom chamber locular wall, and realize the ground connection performance and heat conductivility of liner.
But when carrying out technique, a portion plasma formed in reaction chamber divides
Cloth can not carry out effective in the lower section of the process station where chip, the part plasma to chip
Process results so as to cause the waste of energy of plasma, and then are impacted by etching.
In existing another reaction chamber, the reaction chamber it is different from above-mentioned reaction chamber it
Place is only that：The vertical length of ring body reduces relative to aforementioned toroidal body, and annular slab
The inner be engaged with the periphery wall of chuck, and the height of annular slab is slightly below chuck upper surface, with
Protect reaction chamber bottom chamber locular wall and chuck periphery wall not by plasma etching.Due to upper
The height for stating annular slab is slightly below chuck upper surface, and this causes when carrying out technique, in reaction chamber
The plasma of interior formation is distributed in the top of the process station where chip, so as to avoid
The waste of energy of plasma.
But due to flange and reaction chamber of the above-mentioned liner only by being arranged on ring body upper end
The side wall of room is in contact, to realize the ground connection of liner and heat conduction, the contact surface of the flange and side wall
Product is limited, can not ensure the ground connection performance and heat conductivility of liner.
The content of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is proposed that
A kind of liner, reaction chamber and semiconductor processing equipment, it can not only avoid plasma energy
The waste of amount, and the ground connection performance and heat conductivility of liner can be ensured, it thereby may be ensured that
Process results.
To realize that the purpose of the present invention provides a kind of liner, for protecting the side of reaction chamber
Wall and bottom chamber locular wall be not by plasma etching, the bottom chamber locular wall ground connection, the liner
Including liner body, toroidal confinement layer and annular ground plane, wherein, the toroidal confinement layer ring
Around being arranged on the madial wall of the liner body, and it is less than and close to entering to workpiece to be machined
The process station of row technique, to by plasma confinement where the process station plane it
On；The annular ground plane is circumferentially positioned on the madial wall of the liner body, and is located at and is somebody's turn to do
The lower end of madial wall, and the lower surface of the annular ground plane and the bottom chamber locular wall is upper
Surface fits, with realize the two conduct and heat transfer.
Preferably, the annular flange protruded laterally is provided with the top of the liner body,
The annular flange is stacked in the top side wall of the reaction chamber, and passes through screw and the side
Wall is fixedly connected.
Preferably, it is provided with multiple passages on the toroidal confinement layer, and along the ring
The circumferentially-spaced distribution of shape restraint layer, with the reaction chamber, and it is located at toroidal confinement
The gas of layer top passes through.
Preferably, it is provided with what is passed through for workpiece to be machined in the side wall of the liner body
Pass sheet mouth；The pass sheet mouth is located at the top of the toroidal confinement layer.
Preferably, the upper surface of the toroidal confinement layer is equal with the lower edge of the pass sheet mouth
Together.
Preferably, in the side wall of the liner body, and positioned at the toroidal confinement layer
Lower section is provided with palisade bleeding point, to by the reaction chamber, and is located at toroidal confinement layer
The gas discharge of lower section.
As another technical scheme, the present invention also provides a kind of reaction chamber, described anti-
The pedestal being provided with chamber for carrying workpiece to be machined is answered, and is set in the reaction chamber
Side wall for protecting reaction chamber and bottom chamber locular wall are equipped with not by plasma etching
Lining, the liner employ above-mentioned liner provided by the invention.
Preferably, the process station is the workpiece to be machined being placed on the pedestal
Position；The inward flange of the toroidal confinement layer is engaged with the periphery wall of the pedestal.
Preferably, it is provided with annular groove at the top of the madial wall of the reaction chamber；Institute
The annular flange for being provided with the top of liner body and protruding laterally is stated, the annular flange is stacked
On the bottom surface of the annular groove, and fixed and connected by the side wall of screw and the reaction chamber
Connect.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, its
Including reaction chamber, the reaction chamber employs above-mentioned reaction chamber provided by the invention.
The invention has the advantages that：
Liner provided by the invention, it is by existing plasma confinement by toroidal confinement layer
Where process station on plane, the waste of energy of plasma can be avoided, meanwhile, pass through
Conducted by annular ground plane and bottom chamber locular wall and heat transfer, it is ensured that the ground connection of liner
Performance and heat conductivility, thereby may be ensured that process results.
Reaction chamber provided by the invention, it is by using above-mentioned liner provided by the invention, no
The waste of energy of plasma can be only avoided, and the ground connection performance of liner can be ensured and led
Hot property, it thereby may be ensured that process results.
Semiconductor processing equipment provided by the invention, it is by using provided by the invention above-mentioned anti-
Chamber is answered, can not only avoid the waste of energy of plasma, and connecing for liner can be ensured
Ground performance and heat conductivility, thereby may be ensured that process results.
Brief description of the drawings
Fig. 1 is the structural representation of liner provided by the invention；And
Fig. 2 is the structural representation of reaction chamber provided by the invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, tie below
Accompanying drawing is closed to carry out in detail liner provided by the invention, reaction chamber and semiconductor processing equipment
Description.
Fig. 1 is the structural representation of liner provided by the invention.Fig. 2 is provided by the invention anti-
Answer the structural representation of chamber.Also referring to Fig. 1 and Fig. 2, liner is used to protect reaction chamber
The side wall and bottom chamber locular wall of room 10 are not grounded by plasma etching, the bottom chamber locular wall,
And the pedestal 5 for carrying workpiece to be machined is provided with reaction chamber 10.The liner
Including liner body 4, toroidal confinement layer 42 and annular ground plane 43, wherein, liner body
4 are circumferentially positioned at the inside sidewalls of reaction chamber 10, to protect the side wall of reaction chamber 10 not
By plasma etching.
Toroidal confinement layer 42 is circumferentially positioned on the madial wall of liner body 4, and is less than and is leaned on
The process station E of technique is closely carried out to workpiece to be machined, process station E is to be placed in pedestal
Workpiece to be machined position on 5.By toroidal confinement layer 42, reaction chamber can be protected
10 bottom chamber locular wall and the periphery wall of pedestal 5 not by plasma etching, while also have pair
The effect of contraction of plasma.When carrying out technique, the grade that is formed in the reaction chamber 10 from
The distribution of daughter is as shown in the stain in Fig. 1, as seen from the figure, in the constraint of toroidal confinement layer 42
Under effect, where plasma is distributed in process station E on plane, so as to improve
The utilization rate of gas ions.
Annular ground plane 43 is circumferentially positioned on the madial wall of liner body 4, and interior positioned at this
The lower end of side wall, also, the lower surface of annular ground plane 43 and the bottom chamber of reaction chamber 10
The upper surface of locular wall fits, with realize the two conduct and heat transfer.It is grounded by annular
Layer 43, can increase the contact area between the chamber wall of liner and reaction chamber 10, so as to
It can ensure that liner has good ground connection performance and heat conductivility, and then ensure process results.
In the present embodiment, it is provided with and is protruded laterally (i.e., at the top of liner body 4
Protruded from the periphery wall of liner body 4) annular flange 41, the annular flange 41 is stacked in
The top side wall of reaction chamber 10, and be fixedly connected by screw with the side wall, so as to realize
The fixation of liner.
In the present embodiment, multiple passages 421 are provided with toroidal confinement layer 42, and
Along the circumferentially-spaced distribution of toroidal confinement layer 42, with reaction chamber 10, and it is located at ring
The gas of the top of shape restraint layer 42 is by into the space of the lower section of toroidal confinement layer 42.This is logical
Stomata 421 can use the strip shown in Fig. 1, or can also use other arbitrary shapes
Shape, and the quantity of passage 421 and arrangement mode can freely be set according to specific needs.
In the present embodiment, it is provided with the side wall of liner body 4 and leads to for workpiece to be machined
The pass sheet mouth 44 crossed, the pass sheet mouth 44 is located at the top of toroidal confinement layer 42, to cause quilt
Workpieces processing can be placed on pedestal 5.Preferably, the upper surface of toroidal confinement layer 42 and biography
The lower edge flush of piece mouth 44, to cause toroidal confinement layer 42 less than process station E
On the basis of the plane of place, process station E is positioned as close to, so as to reduce reaction chamber
The area that the madial wall of room 10 and the periphery wall of pedestal 5 are exposed in plasma environment.
In the present embodiment, in the side wall of liner body 4, and it is located at toroidal confinement layer 42
Lower section be provided with palisade bleeding point 45, to by reaction chamber 10, and positioned at annular about
The gas discharge of the lower section of beam layer 42.When carrying out technique, reacted waste gas and unreacted
Gas toroidal confinement layer 42 is entered by each passage 421 on toroidal confinement layer 42
The space of lower section, then discharge reaction chamber 10 via palisade bleeding point 45.
As another technical scheme, the present invention also provides a kind of reaction chamber, such as Fig. 2 institutes
Show, the pedestal 5 for carrying workpiece to be machined is provided with reaction chamber 10, and anti-
Answer be provided with chamber 10 side wall for protecting reaction chamber 5 and bottom chamber locular wall not by etc.
The liner of plasma etching, the liner employ above-mentioned liner provided by the invention.
The toroidal confinement layer 42 of liner is circumferentially positioned on the madial wall of liner body 4, and low
In simultaneously close to the process station E that technique is carried out to workpiece to be machined, process station E is to put
In the position of the workpiece to be machined on pedestal 5.Also, it is preferred that, toroidal confinement layer 42
Inward flange is engaged with the periphery wall of pedestal 5, to ensure that plasma will not be from toroidal confinement layer
Gap between 42 and pedestal 5 enters the lower section of toroidal confinement layer 42, thereby may be ensured that anti-
Answer chamber 10 bottom chamber locular wall and pedestal 5 periphery wall not by plasma etching.
In the present embodiment, annular groove is provided with the top of the madial wall of reaction chamber 10,
Protruded laterally (that is, from liner body 4 moreover, being provided with the top of liner body 4
Periphery wall protrusion) annular flange 41, the annular flange 41 is stacked in the bottom of annular groove
On face, and it is fixedly connected by screw with the side wall of reaction chamber 10.
Reaction chamber provided by the invention, it is by using above-mentioned liner provided by the invention, no
The waste of energy of plasma can be only avoided, and the ground connection performance of liner can be ensured and led
Hot property, it thereby may be ensured that process results.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, its
Including reaction chamber, the reaction chamber employs above-mentioned reaction chamber provided by the invention.
Semiconductor processing equipment provided by the invention, it is by using provided by the invention above-mentioned anti-
Chamber is answered, can not only avoid the waste of energy of plasma, and connecing for liner can be ensured
Ground performance and heat conductivility, thereby may be ensured that process results.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and
The illustrative embodiments of use, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, it can do
Go out all variations and modifications, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of liner, for protect reaction chamber side wall and bottom chamber locular wall not by etc. from
Daughter etches, the bottom chamber locular wall ground connection, it is characterised in that the liner includes liner sheet
Body, toroidal confinement layer and annular ground plane, wherein,
The toroidal confinement layer is circumferentially positioned on the madial wall of the liner body, and be less than,
And close to workpiece to be machined carry out technique process station, to by plasma confinement in institute
Where stating process station on plane；
The annular ground plane is circumferentially positioned on the madial wall of the liner body, and is located at
The lower end of the madial wall, and the lower surface of the annular ground plane and the bottom chamber locular wall
Upper surface fits, with realize the two conduct and heat transfer.
2. liner according to claim 1, it is characterised in that in the liner body
Top be provided with the annular flange protruded laterally, the annular flange is stacked in the reaction
The top side wall of chamber, and be fixedly connected by screw with the side wall.
3. liner according to claim 1, it is characterised in that in the toroidal confinement
Multiple passages are provided with layer, and along the circumferentially-spaced distribution of the toroidal confinement layer, to
Pass through for the gas in the reaction chamber, and above toroidal confinement layer.
4. liner according to claim 1, it is characterised in that in the liner body
Side wall on be provided with the pass sheet mouth passed through for workpiece to be machined；
The pass sheet mouth is located at the top of the toroidal confinement layer.
5. liner according to claim 4, it is characterised in that the toroidal confinement layer
Upper surface and the pass sheet mouth lower edge flush.
6. liner according to claim 1, it is characterised in that in the liner body
Side wall on, and palisade bleeding point is provided with below the toroidal confinement layer, to will
In the reaction chamber, and the gas discharge below toroidal confinement layer.
7. a kind of reaction chamber, it is provided with the reaction chamber for carrying processed work
The pedestal of part, and it is provided with the reaction chamber side wall and bottom for protecting reaction chamber
Portion's chamber wall is not by the liner of plasma etching, it is characterised in that the liner uses right
It is required that the liner described in 1-6 any one.
8. reaction chamber according to claim 7, it is characterised in that the technique position
Put as the position for the workpiece to be machined being placed on the pedestal；
The inward flange of the toroidal confinement layer is engaged with the periphery wall of the pedestal.
9. reaction chamber according to claim 7, it is characterised in that in the reaction
Annular groove is provided with the top of the madial wall of chamber；
The annular flange protruded laterally, the ring are provided with the top of the liner body
Shape flange is stacked on the bottom surface of the annular groove, and passes through screw and the reaction chamber
Side wall is fixedly connected.
10. a kind of semiconductor processing equipment, it includes reaction chamber, it is characterised in that described
Reaction chamber is using the reaction chamber described in claim 7-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610351839.9A CN107437490A (en) | 2016-05-25 | 2016-05-25 | Liner, reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610351839.9A CN107437490A (en) | 2016-05-25 | 2016-05-25 | Liner, reaction chamber and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107437490A true CN107437490A (en) | 2017-12-05 |
Family
ID=60452874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610351839.9A Pending CN107437490A (en) | 2016-05-25 | 2016-05-25 | Liner, reaction chamber and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107437490A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273342A (en) * | 2018-11-02 | 2019-01-25 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
| CN112185786A (en) * | 2019-07-03 | 2021-01-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and grounding ring assembly for plasma processing apparatus |
| CN113707523A (en) * | 2021-08-30 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN113737155A (en) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency |
| CN113871283A (en) * | 2021-09-28 | 2021-12-31 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN114446760A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
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|---|---|---|---|---|
| WO2009089244A1 (en) * | 2008-01-10 | 2009-07-16 | Applied Materials, Inc. | Showerhead insulator and etch chamber liner |
| CN101926232A (en) * | 2008-01-28 | 2010-12-22 | 应用材料公司 | Etching chamber having flow equalizer and lower liner |
| CN203481181U (en) * | 2013-06-08 | 2014-03-12 | 天通吉成机器技术有限公司 | Cavity lining of plasma etching equipment |
-
2016
- 2016-05-25 CN CN201610351839.9A patent/CN107437490A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009089244A1 (en) * | 2008-01-10 | 2009-07-16 | Applied Materials, Inc. | Showerhead insulator and etch chamber liner |
| CN101926232A (en) * | 2008-01-28 | 2010-12-22 | 应用材料公司 | Etching chamber having flow equalizer and lower liner |
| CN203481181U (en) * | 2013-06-08 | 2014-03-12 | 天通吉成机器技术有限公司 | Cavity lining of plasma etching equipment |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273342A (en) * | 2018-11-02 | 2019-01-25 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
| CN112185786A (en) * | 2019-07-03 | 2021-01-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and grounding ring assembly for plasma processing apparatus |
| CN112185786B (en) * | 2019-07-03 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and ground ring assembly for the same |
| CN113737155A (en) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency |
| CN113707523A (en) * | 2021-08-30 | 2021-11-26 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN113707523B (en) * | 2021-08-30 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
| CN113871283A (en) * | 2021-09-28 | 2021-12-31 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN113871283B (en) * | 2021-09-28 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
| CN114446760A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
| CN114446760B (en) * | 2022-01-26 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171205 |
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| RJ01 | Rejection of invention patent application after publication |