CN113871283B - Semiconductor process equipment and process chamber thereof - Google Patents
Semiconductor process equipment and process chamber thereof Download PDFInfo
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- CN113871283B CN113871283B CN202111146244.7A CN202111146244A CN113871283B CN 113871283 B CN113871283 B CN 113871283B CN 202111146244 A CN202111146244 A CN 202111146244A CN 113871283 B CN113871283 B CN 113871283B
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- open end
- mounting table
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- 238000000034 method Methods 0.000 title claims abstract description 112
- 230000008569 process Effects 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 68
- 238000012546 transfer Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 abstract description 15
- 238000012423 maintenance Methods 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 4
- 238000003801 milling Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses semiconductor process equipment and a process chamber thereof, and relates to the technical field of semiconductor processing equipment. The process chamber comprises a chamber body, a cover body and a lining, wherein the air inlet side of the chamber body is provided with an opening end, the opening end is provided with a mounting table, and the mounting table protrudes and is annularly arranged on the inner side wall of the chamber body; the cover body covers the opening end and is matched with the opening end in a sealing way; the inside lining sets up in the cavity, and the inside lining can be dismantled with the mount pad and be connected. The scheme can solve the problem of high maintenance difficulty in the process chamber.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to semiconductor processing equipment and a processing chamber thereof.
Background
In semiconductor process engineering, the process chamber in the process chamber is corrosive after ionization, which easily causes corrosion of the liner in the process chamber, and further requires periodic maintenance or replacement of the liner. In the related art, the lining is arranged between the cavity and the adjusting bracket and is respectively in sealing fit with the cavity and the adjusting bracket through the lining, so that the number of sealing surfaces of the process chamber is increased, the lining needs to be disassembled and assembled to the sealing structure in the process of disassembly and assembly, and the maintenance difficulty of the process chamber is further caused to be high.
Disclosure of Invention
The invention discloses semiconductor process equipment and a process chamber thereof, which are used for solving the problem of high maintenance difficulty in the process chamber.
In order to solve the problems, the invention adopts the following technical scheme:
The application discloses a process chamber for semiconductor processing, which comprises a cavity, a cover body and a lining, wherein the air inlet side of the cavity is provided with an open end, the open end is provided with a mounting table, and the mounting table protrudes and is annularly arranged on the inner side wall of the cavity; the cover body covers the opening end and is matched with the opening end in a sealing way;
the inside lining sets up in the cavity, and the inside lining can be dismantled with the mount pad and be connected.
Based on the process chamber disclosed by the application, the application also discloses semiconductor process equipment. The semiconductor process equipment comprises a process chamber, a swing valve and a molecular pump, wherein the process chamber is provided with an exhaust end, the molecular pump is connected with the exhaust end through the swing valve, and the molecular pump is used for pumping out gas in the process chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
In the process chamber for processing the semiconductor disclosed by the embodiment of the application, the mounting table is arranged at the opening end and protrudes out of the inner side wall of the chamber body, so that the opening end can form a necking structure. Inside lining detachably connects in the mount table, at the in-process of dismantling the inside lining, need not to dismantle the cavity, and then can reduce the maintenance degree of difficulty of process chamber. Compared with the process chamber in the related art, the scheme of the application can reduce the sealing surface of the chamber body at the necking structure, not only can improve the sealing performance of the process chamber, but also can avoid the reduction of the sealing performance caused by the sealing assembly error of the process chamber in the process of maintaining the process chamber.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present application;
FIG. 2 is an enlarged view of FIG. 1 at A;
FIG. 3 is a cross-sectional view of a chamber according to a first embodiment of the present application;
FIG. 4 is a cross-sectional view of a chamber according to a second embodiment of the present application;
FIG. 5 is a front view of a liner according to an embodiment of the present disclosure;
FIG. 6 is a top view of a liner according to an embodiment of the present disclosure;
FIG. 7 is a schematic illustration of an inner pad according to an embodiment of the present application;
FIG. 8 is a schematic diagram of an inner pad with a transfer port according to an embodiment of the present application;
FIG. 9 is a top view of an inner pad according to an embodiment of the present application;
FIG. 10 is a top view of a process chamber according to an embodiment of the present disclosure;
FIG. 11 is a cross-sectional view of a chamber according to a third embodiment of the present application;
fig. 12 is a cross-sectional view of a related art semiconductor process apparatus;
FIG. 13 is an enlarged view at B in FIG. 12;
fig. 14 is a cross-sectional view of a chamber according to a fourth embodiment of the present application.
Reference numerals illustrate:
101-a cavity; 102-an upper cover; 103-adjusting the bracket; 104-lining; 105-a lower electrode; 106, a sealing ring;
100-cavity; 110-an open end; 111-mounting; 1111-supporting blocks; 112-sealing surface; 113-sealing the groove; 114-a sealing ring; 120-a first sheet conveying port; 130-an exhaust end; 140-first incision; 150-a second incision;
200-a cover body; 210-heating the belt;
300-lining; 310-inner pad; 311-splice gap; 312-fixing holes; 320-a body portion; 330-mounting part; 331-locating lip; 3311—opening; 340-lower electrode mounting holes; 350-a second sheet conveying port;
400-a lower electrode assembly;
500-pendulum valve;
600-molecular pump;
700-nozzle;
800-upper electrode coil;
900-heating rod.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The following describes the technical solutions disclosed in the various embodiments of the present invention in detail with reference to fig. 1 to 14.
Referring to fig. 12 and 13, in the related art, a process chamber includes a cavity 101, a liner 104, an upper cover 102, an adjustment bracket 103, and a lower electrode 105, wherein the cavity 101 is a cylindrical structure, and the liner 104 is disposed between the adjustment bracket 103 and the cavity 101. Further, a sealing ring 106 is arranged between the inner liner 104 and the adjusting bracket 103, so as to realize sealing fit between the inner liner 104 and the adjusting bracket 103. Illustratively, a sealing ring 106 is disposed between the liner 104 and the cavity 101 to achieve a sealing fit between the liner 104 and the cavity 101 via the sealing ring 106. The upper cover 102 is disposed on a side of the adjusting support 103 away from the liner 104, the lower electrode 105 is disposed on the liner 104, and the upper cover 102, the adjusting support 103, the liner 104 and the lower electrode 105 enclose a reaction chamber. During semiconductor processing, gases within the reaction chamber are corrosive, which can easily cause corrosion of the liner 104 within the process chamber, thereby requiring periodic maintenance or replacement of the liner 104. The inventor finds that in the process of completing the application, the liner 104 of the process chamber in the related art is arranged between the adjusting bracket 103 and the cavity 101, and then the adjusting bracket 103 needs to be disassembled and assembled in the process of maintaining or replacing the liner 104, so that the disassembly and assembly difficulty of the liner 104 is high, the sealing structure at the assembling position of the adjusting bracket 103 and the liner 104 is easy to damage due to the disassembly and assembly of the adjusting bracket 103, and the sealing performance of the process chamber is affected.
Referring to fig. 1 to 5, a process chamber for semiconductor processing according to an embodiment of the present application includes a chamber body 100, a lid body 200, and a liner 300. Wherein the chamber 100 is a basic structural member, and may provide a mounting base for the lid 200 and the liner 300. Illustratively, the cover 200 is a dielectric window to add process gases for semiconductor processing into the chamber 100 through the cover 200. Illustratively, the gases used in the semiconductor processing process may be: argon (Ar), helium (He), nitrogen (N 2), and/or hydrogen (H 2), and the like. Referring to fig. 1, the process chamber further includes a nozzle 700. The nozzle 700 is used to inject a process gas into a process chamber. Illustratively, the nozzle 700 is disposed on the cover 200 and sealingly engages the cover 200.
Referring to fig. 1 and 3, the air intake side of the chamber 100 has an open end 110, the open end 110 is provided with a mounting table 111, and the mounting table 111 protrudes and is annularly provided to the inner side wall of the chamber 100. The cover 200 is covered on the open end 110, and the cover 200 is in sealing fit with the open end 110, so as to form a process chamber with a closed space. Referring to fig. 1, a liner 300 is disposed in the chamber 100, and the liner 300 is detachably coupled to the mounting table 111.
In the above embodiment, the liner 300 is directly detachably connected to the mounting table 111, so that the opening end 110 is not required to be detached during the process of detaching the liner 300, thereby reducing the maintenance difficulty of the process chamber. Illustratively, the open end 110 may not be removed during removal of the liner 300. The air intake side of the chamber 100 is directly provided with an open end 110. The specific open end 110 and the chamber body 100 may be configured as an integral structure, so as to further reduce the sealing surface of the process chamber, improve the sealing performance of the process chamber, and further realize higher vacuum degree in the process chamber and reduce pressure rise in the process chamber in the semiconductor process. In addition, the open end 110 and the cavity 100 are of an integrated structure, and the cavity 100 can be overhauled and maintained conveniently. Of course, the open end 110 may also be disposed separately from the cavity 100, and illustratively, the open end 110 may be in sealing engagement with the cavity 100, so as to reduce the number of sealing surfaces, and in the process of maintaining the liner 300, the open end 110 is not required to be detached from the cavity 100, so that the sealing structure between the open end 110 and the cavity 100 is prevented from being damaged.
Referring to fig. 1 to 4, the open end 110 is provided with a mounting table 111, the mounting table 111 protrudes and is annularly disposed on an inner sidewall of the cavity 100, and the open end 110 may form a necking structure, i.e., a cross-sectional area of a corresponding internal cavity at the open end 110 is smaller than a cross-sectional area of a corresponding internal cavity at the non-open end 110.
Referring to fig. 3 and 4, the inner diameter of the surrounding area of the mounting table 111 gradually increases from the side closer to the cover 200 to the side farther from the cover 200. In the above embodiment, not only the necking structure can be formed by the mounting table 111, but also the bearing performance of the mounting table 111 can be increased, and the stability of the mounting table 111 can be improved.
Referring to fig. 3, the mounting table 111 is an annular boss disposed in the cavity 100 and extending along an axial direction of the cavity 100, and the annular boss is bell-mouthed to form a necking structure. Referring to fig. 1 and 3, the inner diameter of the annular boss may be gradually increased from a side closer to the cover 200 to a side farther from the cover 200 to form the open end 110. Illustratively, the inner sidewall of the annular boss is disposed obliquely with respect to the inner sidewall of the cavity 100, and the inner diameter of the annular boss gradually decreases from an end closer to the body portion 320 to an end farther from the body portion 320. Referring to fig. 11, the annular boss corresponds to a necking angle θ, and the necking angle ranges from: and the angle theta is more than or equal to 110 degrees and more than or equal to 40 degrees. Illustratively, the annular boss may be integrally formed with the cavity 100. There are many methods of machining the annular boss on the inner wall of the chamber 100. For example, an annular boss may be formed within the cavity 100 by welding, casting, milling, or the like. For this reason, embodiments of the present application are not limited to a specific processing method of forming the annular boss in the cavity 100.
Referring to fig. 1, 3 and 4, the side of the chamber 100 remote from the intake side is provided with an exhaust end 130. Further, the cross-section of the corresponding cavity at the exhaust end 130 is smaller than the corresponding cross-section of the portion of the cavity 100 between the exhaust end 130 and the opening end 110, so that a necking structure is formed at the exhaust end 130. Illustratively, the discharge end 130 has a discharge opening having a smaller diameter than a portion of the cavity 100 between the discharge end 130 and the open end 110 such that the discharge end 130 forms a necked-down configuration. Illustratively, an annular boss is provided at the exhaust end 130, which protrudes and is disposed around the inner sidewall of the cavity 100 to form a necked-down structure at the exhaust end 130 through the annular boss. Further, the semiconductor process apparatus further includes a molecular pump 600, and since the caliber of the molecular pump 600 is smaller than the inner diameter of the cavity 100, the exhaust end 130 can be better adapted to the molecular pump 600 disposed at the bottom of the cavity 100 by forming a necking structure at the exhaust end 130, so as to improve the reliability of the connection between the exhaust end 130 and the molecular pump 600.
Referring to fig. 4, the mounting table 111 may be disposed at intervals on a plurality of support blocks 1111 on an inner wall of the chamber 100, wherein the inner side walls of the support blocks 1111 are disposed obliquely with respect to the inner side walls of the chamber 100, and the plurality of support blocks 1111 are disposed on the same plane perpendicular to the axial direction of the chamber 100, so as to ensure that the liner 300 may be horizontally positioned on the plurality of support blocks 1111, and ensure stability of the liner 300. Illustratively, the spacing between two adjacent mounting platforms 111 is equal to provide uniform stress to the cover 200. Illustratively, the support blocks 1111 are removably coupled to the chamber 100, and thus, in the event that the liner 300 is to be removed, the support blocks 1111 may be removed first to facilitate removal of the liner 300. Specifically, the support block 1111 may be fixed to the inner sidewall of the cavity 100 by a screw. Of course, the support block 1111 may also be integrally formed with the chamber 100. Illustratively, the support blocks 1111 may be formed within the cavity 100 by welding, casting, milling, or the like. For this reason, the embodiment of the present application is not limited to a specific processing method of forming the supporting block 1111 in the cavity 100.
In an alternative embodiment, the mounting block 111 may be integrally formed with the chamber 100. Illustratively, the mounting table 111 may be formed on the intake side of the cavity 100 by injection molding, welding, milling, or the like.
In an alternative embodiment, the mounting stage 111 may also be provided separately from the chamber 100. Illustratively, a mounting block 111 is removably coupled to the inner sidewall of the chamber 100 to provide a mounting basis for the lid 200 and liner 300 via the mounting block 111. Illustratively, during removal of liner 300, liner 300 may be removed along with mounting block 111. It should be noted that, in this embodiment, the mounting table 111 is disposed on the inner wall of the cavity 100, and in the process of sealing the process chamber, only a sealing structure is required to be disposed between the cover 200 and the cavity 100, and no sealing structure is required to be disposed between the mounting table 111 and the cavity 100, so that the number of sealing surfaces of the process chamber can be reduced. In the process of maintaining the liner 300, since the mounting table 111 and the inner side of the chamber 100 have no sealing structure, the sealing structure can be prevented from being damaged.
Referring to fig. 7 and 8, the liner 300 includes a main body 320 and a mounting portion 330, the main body 320 is positioned in the cavity 100, the outer diameter of the main body 320 is larger than the caliber of the open end 110, the mounting portion 330 is connected with the main body 320, and the mounting portion 330 is detachably connected with the mounting table 111.
The outer diameter of the main body 320 being larger than the caliber at the open end 110 means that: the cross-section of the body portion 320 is larger than the cross-section of the corresponding internal cavity at the open end 110. I.e., the body portion 320 protrudes into a space corresponding to the right under the mounting portion 330. Therefore, the solution described in the above embodiment can fully utilize the internal space of the cavity 100, thereby being beneficial to reducing the size of the cavity 100.
In an alternative embodiment, the open end 110 has a smaller diameter than the inner diameter of the cavity 100 to reduce the diameter of the cap 200. Further, when the pressure in the process chamber is constant, the diameter of the cover 200 is reduced, and thus the thickness of the cover 200 can be reduced, so that the loss of the external magnetic field through the cover 200 can be reduced. Referring to fig. 1, an upper electrode coil 800 may be further provided outside the process chamber to provide a magnetic field to the process chamber through the upper electrode coil 800 for ionizing the process gas within the chamber 100, for example. Illustratively, the upper electrode coil 800 may be disposed on a side of the cover 200 remote from the cavity 100.
Referring to fig. 2, in an alternative embodiment, a locating lip 331 is disposed on a side of the mounting portion 330 remote from the main body portion 320, the mounting portion 330 passes through the open end 110, and the locating lip 331 abuts against a side of the mounting platform 111 facing the cover 200. Illustratively, the locating lip 331 is removably coupled to the mounting block 111.
In the above embodiment, by providing the mounting table 111 and the positioning lip 331, not only the positioning of the liner 300 can be achieved, and the mounting accuracy of the liner 300 can be ensured, but also the liner 300 can be easily disassembled and assembled by detachably connecting the positioning lip 331 with the mounting table 111. Illustratively, there are many ways in which the locating lip 331 may be removably attached to the mounting block 111, such as: snap-fit connection, pin connection, screw connection, etc. Therefore, the embodiment does not limit the specific manner in which the positioning lip 331 is detachably connected to the mounting base 111.
Referring to fig. 2, the open end 110 has a sealing surface 112, and the open end 110 is in sealing engagement with the cover 200 via the sealing surface 112. Illustratively, the sealing face 112 is provided with a sealing groove 113, the sealing groove 113 being an annular groove trapped within the sealing face 112. Optionally, a seal groove 113 is provided around the opening of the open end 110. Further, the process chamber further includes a sealing ring 114, the sealing ring 114 is disposed on the sealing groove 113, and a dimension of the sealing ring 114 in a depth direction of the sealing groove 113 is greater than a depth of the sealing groove 113, so that the sealing ring 114 can be in abutting sealing with a side of the cover 200 near the open end 110. Illustratively, the seal 114 may be an O-ring type seal.
Referring to fig. 2, the mounting block 111 is caught in the sealing surface 112, and the depth of the mounting block 111 caught in the sealing surface 112 is greater than the thickness of the locating lip 331 so that the locating lip 331 can be caught in the sealing surface 112. The thickness of the positioning lip 331 refers to: the positioning lip 331 is recessed in the mounting block 111 by the depth dimension of the sealing surface 112. Illustratively, the thickness of the locating lip 331 ranges from: 3mm to 10mm.
In this embodiment, when the cover 200 is covered on the open end 110, a gap is formed between the positioning lip 331 and the cover 200, so as to avoid the inner liner 300 supporting the cover 200 and affecting the sealing performance between the cover 200 and the open end 110.
Referring to fig. 14, in another alternative embodiment, a side of the cavity 100 remote from the air intake side has an air discharge end 130, and the cavity 100 at the open end 110 has a first inner diameter; the inner diameter of the portion of the cavity 100 between the open end 110 and the exhaust end 130 is a second inner diameter, and the first inner diameter is smaller than the second inner diameter, so that the cavity 100 can form a necking structure at the open end 110, and further the caliber of the open end 110 can be effectively reduced, and further the thickness of the cover 200 can be further reduced, so that the loss of the magnetic field generated by the cover 200 to the upper electrode coil can be reduced.
The open end 110 has a sealing surface 112, one side of the mounting table 111 near the cover 200 has a supporting surface and a mounting surface, the supporting surface is flush with the sealing surface 112, the positioning lip 331 is abutted against the mounting surface, the mounting surface is trapped in the sealing surface 112, and the depth of the mounting surface trapped in the sealing surface 112 is larger than the thickness of the positioning lip 331. Illustratively, an annular groove may be provided on a side of the mounting table 111 adjacent to the cover 200 to form a mounting surface therethrough. Specifically, the locating lip 331 is positioned within the annular recess such that a side of the locating lip 331 remote from the body portion 320 does not protrude beyond the sealing surface 112. The supporting surface is flush with the sealing surface 112, so that the mounting table 111 can be supported on the cover body 200, the stress of the cover body 200 is reduced, the thickness of the cover body 200 can be further reduced, and the loss of an external magnetic field passing through the cover body 200 is reduced.
Referring to fig. 1, the process chamber further includes a lower electrode assembly 400, the lower electrode assembly 400 being disposed within the cavity 100, and the lower electrode assembly 400 being located on a side of the liner 300 remote from the open end 110. Illustratively, the body part 320 is disposed around the outside of the lower electrode assembly 400 and detachably connected to the lower electrode assembly 400. Illustratively, the liner 300 has a lower electrode mounting hole 340, and the lower electrode assembly 400 is at least partially embedded in the lower electrode mounting hole 340. Illustratively, the liner 300 is connected to the lower electrode assembly 400 by screws. Illustratively, the inner liner block 310 has fixing holes 312 such that screws may be coupled to the mounting table 111 or the lower electrode assembly 400 through the fixing holes 312.
Referring to fig. 1 and 3, the chamber 100 is provided with a first cutout 140 for mounting the lower electrode assembly 400. Further, the first slit 140 penetrates through the cavity wall of the cavity 100 so that the cable of the lower electrode assembly 400 can pass out of the first slit 140. Illustratively, the lower electrode assembly 400 is sealingly engaged with the first cutout 140 to ensure sealing performance of the process chamber.
Referring to fig. 1 and 3, the cavity 100 is further provided with a second slit 150, and the second slit 150 is provided along the cavity wall of the cavity 100. Further, the process chamber further comprises a heating rod 900, wherein the heating rod 900 is at least partially embedded in the second notch 150, so that the heating rod 900 heats the process chamber, and further, the temperature in the process chamber is controlled. Further, referring to fig. 1, a heating belt 210 is provided on the cover 200 to heat the process chamber by the heating belt 210.
Referring to fig. 1, 5 and 6, in an alternative embodiment, the inner liner 300 includes a plurality of inner pads 310, the plurality of inner pads 310 are disposed about an axis of the cavity 100, and the plurality of inner pads 310 are spliced to form the inner liner 300. Illustratively, the process chambers of the present application may be used for wafer processing. Further, the cavity 100 may be provided in a cylindrical structure. Alternatively, the axis of the chamber 100 may pass through the center of the wafer during wafer processing.
In the above embodiment, the inner liner 300 is formed by splicing the inner liner blocks 310, so that the inner liner 300 can be split into the inner liner blocks 310, so that the inner liner 300 can be installed or removed from the opening end 110 into the cavity 100 in the form of the inner liner blocks 310, and the maintenance or replacement difficulty of the inner liner 300 can be reduced without disassembling the necking structure in the maintenance or replacement process of the inner liner 300. In addition, in the case that the sealing structure is arranged at the necking structure, the process chamber in the embodiment does not need to disassemble the sealing structure at the necking structure in the maintenance or replacement process of the liner 300, so that the sealing structure at the necking structure is prevented from being damaged in the disassembly and assembly process.
Referring to fig. 6, the positioning lip 331 is provided with a notch 3311, and the notch 3311 is located at the joint of two adjacent inner lining blocks 310, so that the inner lining blocks 310 can be spliced and disassembled. Illustratively, the splice of two adjacent liner blocks 310 is provided with a chamfer such that a gap 3311 is formed at the splice after the splice of two liner blocks 310.
Referring to fig. 6, in an alternative embodiment, two adjacent liner blocks 310 have a splice gap 311 therebetween. Alternatively, the splice gap 311 is disposed along the radial direction of the liner 300. Illustratively, the width of the splice gap 311 between two adjacent liner blocks 310 ranges from: 3mm to 6mm so that the plasma can annihilate through the splice gap 311. The splicing gap 311 is formed between two adjacent lining blocks 310, so that the two adjacent lining blocks 310 can be prevented from rubbing against each other in the process of disassembly and assembly, particle pollution to a process chamber caused by mutual friction between the lining blocks 310 can be avoided, the resistance applied when the lining blocks 310 are assembled or disassembled is reduced, the installation and the disassembly of the lining blocks 310 are facilitated, and plasma can be annihilated through the splicing gap 311.
In an alternative embodiment, the bottom of liner 300 is provided with a vent to allow gas or plasma within the process chamber to flow through the vent. Illustratively, the plasma within the process chamber annihilates through an exhaust vent in the bottom of the liner 300. Illustratively, the chamber 100 also includes a venting end 130. The exhaust port 130 is positioned on a side of the chamber 100 remote from the open end 110 so that gases within the process chamber can be exhausted from the exhaust port 130. Illustratively, the vent may be elongated, and the width of the vent ranges: 3mm to 6mm. Further, the exhaust holes are uniformly distributed at the bottom of the liner 300 in the radial direction of the liner 300. For example, the exhaust port 130 may be provided with a swing valve 500 and a molecular pump 600 to pump gas in the process chamber through the swing valve 500 and the molecular pump 600 so that a low pressure environment or a vacuum environment suitable for a semiconductor processing process may be formed in the process chamber. In an alternative embodiment, the splicing gap 311 between two adjacent liner blocks 310 has the same width as the exhaust hole, so that the air flow in the cavity 100 can be more uniform in the process of passing through the bottom of the liner 300, and plasma annihilation can be better realized. Illustratively, the wall thickness of liner 300 is 3mm to 10mm.
Referring to fig. 6, in an alternative embodiment, splice gap 311 is disposed radially of liner 300. Splice gap 311 sets up along the radial of inside lining 300, and then makes all can splice between each inside lining piece 310, and then at the in-process of installing interior lining piece 310, need not to consider the installation order of each interior lining piece 310, and the concatenation limit that any two inside lining pieces 310 correspond all can realize the concatenation promptly, improves the uniformity of the assembly limit of each interior lining piece 310 to each inside lining piece 310 splice each other and form inside lining 300. Further, the corresponding central angles of the inner pads 310 are equal, so that the consistency of the inner pads 310 is improved, the inner pads 310 can be exchanged, and the overhaul and the preparation are convenient.
In an alternative embodiment, the chamber 100 is provided with a first transfer port 120 and the liner 300 has a second transfer port 350, the first transfer port 120 being opposite the second transfer port 350 so that process products may enter or exit the process chamber from the first transfer port 120 and the second transfer port 350. Illustratively, the process product may be a wafer. Illustratively, the first transfer port 120 is provided with a gate valve to seal the first transfer port 120 with the gate valve.
Referring to fig. 5 and 8, in an alternative embodiment, second transfer port 350 is formed in one of inner pads 310. In an alternative embodiment, the corresponding central angles of the inner lining blocks 310 without the second sheet conveying openings 350 are equal, so that the inner lining blocks 310 without the second sheet conveying openings 350 are identical in structure and size, which not only can reduce the maintenance difficulty of the inner lining 300, but also can reduce the kinds of the spare materials of the inner lining blocks 310. Of course, the second tab openings 350 may also be formed by a groove splice of the spliced edges of two adjacent liner blocks 310.
In an alternative embodiment, the mounting platform 111 is provided with a positioning protrusion, the positioning lip 331 is provided with a positioning groove or a positioning hole, and when the liner 300 is mounted on the mounting platform 111, the positioning protrusion is at least partially embedded in the positioning hole, so that the first plate conveying port 120 and the second plate conveying port 350 are opposite through the positioning protrusion and the positioning hole, and the mounting difficulty of the liner block 310 provided with the second plate conveying port 350 is reduced.
Based on the process chamber disclosed by the embodiment of the application, the embodiment of the application also discloses semiconductor process equipment. The semiconductor processing apparatus comprises a process chamber as in any one of the embodiments described above. Referring to fig. 1, the semiconductor process apparatus further includes a swing valve 500 and a molecular pump 600, the process chamber has an exhaust end 130, the molecular pump 600 is connected to the exhaust end 130 through the swing valve 500, and the molecular pump 600 is used to pump out gas in the process chamber.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Claims (12)
1.A process chamber for semiconductor process equipment, comprising a cavity (100), a cover (200) and a liner (300), wherein the air inlet side of the cavity (100) is provided with an open end (110), the open end (110) is provided with a mounting table (111), and the mounting table (111) protrudes and is annularly arranged on the inner side wall of the cavity (100); the cover body (200) is covered on the open end (110), and the cover body (200) is in sealing fit with the open end (110);
The lining (300) is arranged in the cavity (100), and the lining (300) is detachably connected with the mounting table (111);
The inner diameter of the surrounding area of the mounting table (111) gradually increases from the side close to the cover body (200) to the side far away from the cover body (200).
2. The process chamber of claim 1, wherein the mounting table (111) is an annular boss disposed within the cavity (100) extending along an axial direction of the cavity (100), the annular boss being flared.
3. The process chamber of claim 1, wherein the mounting table (111) is a plurality of support blocks (1111) protruding on an inner wall of the cavity (100) at intervals, wherein an inner side wall of the support blocks (1111) is inclined with respect to an inner side wall of the cavity (100), and the plurality of support blocks (1111) are located on a same plane perpendicular to an axial direction of the cavity (100).
4. The process chamber of claim 1, wherein the liner (300) comprises a body portion (320) and a mounting portion (330), the body portion (320) is positioned within the chamber body (100) and an outer diameter of the body portion (320) is greater than a caliber formed by the mounting table (111),
The mounting portion (330) is connected to the main body portion (320), and the mounting portion (330) is detachably connected to the mounting table (111).
5. The process chamber according to claim 4, wherein a locating lip (331) is provided on a side of the mounting portion (330) remote from the main body portion (320), the mounting portion (330) passes through the open end (110), and the locating lip (331) is stopped against a side of the mounting table (111) facing the cover body (200).
6. The process chamber of claim 5, wherein the open end (110) has a sealing surface (112), the open end (110) is in sealing engagement with the lid (200) via the sealing surface (112), the mounting table (111) is recessed within the sealing surface (112), and the mounting table (111) is recessed within the sealing surface (112) to a depth greater than the thickness of the locating lip (331).
7. The process chamber of claim 6, wherein a side of the cavity (100) remote from the gas inlet side has a gas outlet end (130), the cavity (100) having an inner diameter at the open end (110) of a first inner diameter; the portion of the cavity (100) between the open end (110) and the exhaust end (130) has a second inner diameter, the first inner diameter being smaller than the second inner diameter.
8. The process chamber of claim 4, further comprising a lower electrode assembly (400), the lower electrode assembly (400) disposed within the chamber body (100) and the lower electrode assembly (400) being located on a side of the liner (300) remote from the open end (110),
The main body part (320) is arranged outside the lower electrode assembly (400) in a surrounding manner and is detachably connected with the lower electrode assembly (400).
9. The process chamber of any one of claims 1 to 8, wherein the liner (300) comprises a plurality of inner pads (310), the plurality of inner pads (310) being disposed about an axis of the cavity (100), and the plurality of inner pads (310) being spliced to form the liner (300).
10. The process chamber according to claim 9, wherein a splice gap (311) is provided between two adjacent liner blocks (310), the splice gap (311) being arranged in a radial direction of the liner (300), the splice gap (311) having a width of 3mm-6mm.
11. The process chamber according to claim 10, wherein the cavity (100) is provided with a first transfer port (120), the liner (300) having a second transfer port (350), the first transfer port (120) being opposite the second transfer port (350);
the second transfer port (350) is formed in a side wall of one of the inner liner blocks (310).
12. A semiconductor process apparatus comprising the process chamber of any one of claims 1 to 11, further comprising a pendulum valve (500) and a molecular pump (600), the process chamber having an exhaust end (130), the molecular pump (600) being connected to the exhaust end (130) through the pendulum valve (500), and the molecular pump (600) being adapted to evacuate gas from the process chamber.
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| CN202111146244.7A CN113871283B (en) | 2021-09-28 | 2021-09-28 | Semiconductor process equipment and process chamber thereof |
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| CN202111146244.7A CN113871283B (en) | 2021-09-28 | 2021-09-28 | Semiconductor process equipment and process chamber thereof |
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000016386A (en) * | 1996-06-05 | 2000-03-25 | 리차드 에이치. 로브그렌 | High flown vacuum chamber including equipment modules such as plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| KR20070081316A (en) * | 2006-02-10 | 2007-08-16 | 삼성전자주식회사 | Apparatus for treating substrate |
| CN101207003A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining of wafer processing chamber and wafer processing chamber containing said inner lining |
| CN101414537A (en) * | 2001-10-15 | 2009-04-22 | 兰姆研究公司 | Tunable multi-zone gas injection system |
| CN104465293A (en) * | 2014-12-19 | 2015-03-25 | 中国科学院嘉兴微电子仪器与设备工程中心 | Cavity structure for plasma device and plasma device |
| WO2015135350A1 (en) * | 2014-03-13 | 2015-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma machining device |
| CN105695936A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning chamber and plasma processing apparatus |
| CN107437490A (en) * | 2016-05-25 | 2017-12-05 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN210223960U (en) * | 2019-07-15 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111725106A (en) * | 2020-06-22 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN111996590A (en) * | 2020-08-14 | 2020-11-27 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN112376029A (en) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113270360A (en) * | 2021-05-10 | 2021-08-17 | 北京北方华创微电子装备有限公司 | Process chamber, wafer, compression ring transmission method and semiconductor process equipment |
-
2021
- 2021-09-28 CN CN202111146244.7A patent/CN113871283B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000016386A (en) * | 1996-06-05 | 2000-03-25 | 리차드 에이치. 로브그렌 | High flown vacuum chamber including equipment modules such as plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| CN101414537A (en) * | 2001-10-15 | 2009-04-22 | 兰姆研究公司 | Tunable multi-zone gas injection system |
| KR20070081316A (en) * | 2006-02-10 | 2007-08-16 | 삼성전자주식회사 | Apparatus for treating substrate |
| CN101207003A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining of wafer processing chamber and wafer processing chamber containing said inner lining |
| WO2015135350A1 (en) * | 2014-03-13 | 2015-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma machining device |
| CN105695936A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning chamber and plasma processing apparatus |
| CN104465293A (en) * | 2014-12-19 | 2015-03-25 | 中国科学院嘉兴微电子仪器与设备工程中心 | Cavity structure for plasma device and plasma device |
| CN107437490A (en) * | 2016-05-25 | 2017-12-05 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN210223960U (en) * | 2019-07-15 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111725106A (en) * | 2020-06-22 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN111996590A (en) * | 2020-08-14 | 2020-11-27 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN112376029A (en) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113270360A (en) * | 2021-05-10 | 2021-08-17 | 北京北方华创微电子装备有限公司 | Process chamber, wafer, compression ring transmission method and semiconductor process equipment |
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