CN210223960U - Process chamber and semiconductor processing equipment - Google Patents
Process chamber and semiconductor processing equipment Download PDFInfo
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- CN210223960U CN210223960U CN201921102089.7U CN201921102089U CN210223960U CN 210223960 U CN210223960 U CN 210223960U CN 201921102089 U CN201921102089 U CN 201921102089U CN 210223960 U CN210223960 U CN 210223960U
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Abstract
The utility model provides a process chamber and semiconductor processing equipment, which comprises a chamber body, a chamber cover, a base and an insulating cylinder for generating plasma, wherein the chamber cover is arranged at the top of the chamber body, and an inlet opening for the plasma to enter the chamber body is arranged on the chamber cover; the insulating cylinder is arranged on the chamber cover and connected with the upper surface of the chamber cover, and the inside of the insulating cylinder is communicated with the inlet opening; the base is arranged in the chamber body and is positioned below the inlet opening, and the orthographic projection of the inlet opening at least completely covers the orthographic projection of the whole base. The utility model provides a process cavity and semiconductor processing equipment can reduce the processing accessory substance that drops on the base to improve the stability that the base adsorbs the substrate, reduce the clearance frequency, practice thrift the manpower, improve production efficiency.
Description
Technical Field
The utility model relates to a semiconductor manufacturing field specifically relates to a process cavity and semiconductor processing equipment.
Background
Currently, silicon carbide (SiC) material is a very potential semiconductor material, which can be applied in high temperature (above 600 ℃), high pressure (above 1200V), high power and anti-radiation systems, and is widely used as a substrate material of microwave power devices. Third generation semiconductor materials, represented by silicon carbide and gallium nitride (GaN), are applicable to applications where silicon (Si), gallium arsenide (GaAs) and indium phosphide (InP) are insufficient due to their excellent characteristics, and are rapidly emerging as a breakthrough in the performance of semiconductor devices. However, particle deposition control is a significant difficulty in silicon carbide etching, and the large amount of by-products from the etching process can have a significant impact on subsequent processing if they cannot be rapidly exhausted from the chamber.
In the prior art, the silicon carbide etching machine comprises a process chamber, a base, a ceramic cylinder and a coil, wherein the coil is arranged outside the ceramic cylinder and used for exciting process gas passing through the ceramic cylinder to form plasma, the plasma enters the process chamber from a channel in an upper cover of the process chamber after passing through the ceramic cylinder, and the base is placed in the process chamber and located below the channel so that the plasma can etch a substrate on the base.
However, in the prior art, by-products generated by etching silicon carbide may be deposited on the upper cover of the process chamber, and since the orthographic projection of the upper cover partially coincides with the orthographic projection of the susceptor, the by-products deposited on the upper cover may fall onto the susceptor, thereby affecting the substrate adsorption of the susceptor, which requires frequent opening of the process chamber for cleaning, resulting in labor consumption and serious influence on the mass production efficiency.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least, provide a process cavity and semiconductor processing equipment, it can reduce the technology accessory substance that drops to on the base to improve the stability that the base adsorbs the substrate, reduce the clearance frequency, practice thrift the manpower, improve production efficiency.
The utility model provides a process chamber for realizing the purpose of the utility model, which comprises a chamber body, a chamber cover, a pedestal and an insulating cylinder for generating plasma, wherein the chamber cover is arranged at the top of the chamber body, and an inlet opening for the plasma to enter the chamber body is arranged on the chamber cover;
the insulating cylinder is arranged on the chamber cover and connected with the upper surface of the chamber cover, and the inside of the insulating cylinder is communicated with the inlet opening;
the base is arranged in the chamber body and is positioned below the inlet opening, and the orthographic projection of the inlet opening at least completely covers the whole orthographic projection of the base.
Preferably, the insulation tube comprises a tube body and an annular connection portion, wherein the inner diameter of the tube body is smaller than the inner diameter of the access opening;
the annular connecting part is connected with the cylinder main body and connected with one side, facing the outside of the chamber body, of the chamber cover, the inside of the annular connecting part is communicated with the inlet opening and the inside of the cylinder main body respectively, and the minimum inner diameter of the annular connecting part is larger than or equal to the inner diameter of the cylinder main body.
Preferably, the annular connecting portion has an inner diameter gradually increasing from one end thereof connected to the cylinder main body to the other end thereof connected to the chamber cover.
Preferably, the annular connecting part comprises a circular truncated cone connecting piece, the circular truncated cone connecting piece is in a circular truncated cone shape, one end with the smallest inner diameter is connected with one end of the cylinder main body, and the end with the largest inner diameter is connected with the chamber cover.
Preferably, the annular connecting portion is including the connecting piece of buckling, the one end of buckling the connecting piece with a section of thick bamboo main part is connected, and follows the perpendicular to the direction of the axis of a section of thick bamboo main part is towards keeping away from the direction of a section of thick bamboo main part extends, the other end with the chamber cap is connected, and along being on a parallel with the direction of the axis of a section of thick bamboo main part is towards keeping away from the direction of chamber cap extends, just buckle the connecting piece with the one end that a section of thick bamboo main part is connected and with the other end that the chamber cap is connected extends to crossing and is connected.
Preferably, the annular connecting portion and the chamber cover are connected to an end surface of the inlet opening facing the outside of the chamber body.
Preferably, the process chamber further comprises a coil which is wound around the drum main body, and an electric field generated by the coil can be applied to the inner wall of the drum main body and the annular connection portion.
Preferably, the coil is a solid coil that is wound around the cartridge main body and extends in a direction approaching the annular connecting portion in an axial direction of the cartridge main body.
Preferably, the process chamber further comprises a vacuum pumping device, the vacuum pumping device is arranged at the bottom of the chamber body, a discharge passage is arranged on the bottom wall of the chamber body, and the discharge passage penetrates through the bottom wall of the chamber body and is respectively communicated with the inside of the chamber body and the vacuum pumping device, so that the vacuum pumping device can pump out the process byproducts in the chamber body.
The utility model also provides a semiconductor processing equipment, its adoption the utility model provides a process chamber.
The utility model discloses following beneficial effect has:
the utility model provides a process chamber, be connected with the insulating cylinder that is used for producing plasma in one side of the outside of chamber lid orientation cavity body, the plasma that the insulating cylinder produced gets into the inside of cavity body through the access opening that sets up on the chamber lid, cover the orthographic projection of the whole base that is located its below for its orthographic projection at least completely with the help of designing the access opening, there is not coincident part in the orthographic projection of messenger chamber lid and base, the condition emergence that drops to the base on with the technological accessory substance of reduction deposit on the chamber lid, thereby the reduction drops the technological accessory substance on the base, and then improve the stability of base adsorption substrate, reduce the clearance frequency, the manpower is practiced thrift, and the production efficiency is improved.
The utility model provides a semiconductor processing equipment adopts the utility model provides a process cavity chamber, and with the help of the utility model provides a process cavity chamber reduces the technology accessory substance that drops to on the base to improve the stability that the base adsorbs the substrate, reduce the clearance frequency, practice thrift the manpower, improve production efficiency.
Drawings
Fig. 1 is a schematic structural view of a process chamber and a semiconductor processing apparatus provided by the present invention;
FIG. 2 is a schematic structural view of a process chamber according to the present invention;
FIG. 3 is a schematic structural view of a process chamber according to the present invention;
description of reference numerals:
11-a chamber body; 12-chamber lid; 13-a base; 14-an access opening; 15-a cartridge body; 161-a truncated cone connector; 162-a bent connector; 17-a stereo coil; 18-vacuum pumping device.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following detailed description of the process chamber and the semiconductor processing apparatus provided by the present invention is made with reference to the accompanying drawings.
As shown in fig. 1 to 3, the present embodiment provides a process chamber including a chamber body 11, a chamber lid 12, a susceptor 13, and an insulating cylinder for generating plasma, wherein the chamber lid 12 is disposed at the top of the chamber body 11, and an entrance opening 14 for plasma to enter the inside of the chamber body 11 is provided on the chamber lid 12; the insulating cylinder is arranged on the chamber cover 12 and connected with the upper surface of the chamber cover 12, and the inside of the insulating cylinder is communicated with the inlet opening 14; the susceptor 13 is disposed inside the chamber body 11 below the entrance opening 14, and an orthographic projection of the entrance opening 14 at least completely covers the entire orthographic projection of the susceptor 13.
In the process chamber provided by this embodiment, an insulating cylinder for generating plasma is connected to one side of the chamber lid 12 facing the outside of the chamber body 11, the plasma generated by the insulating cylinder enters the inside of the chamber body 11 through the inlet opening 14 arranged on the chamber lid 12, and by designing the inlet opening 14 such that the orthographic projection of the inlet opening at least completely covers the orthographic projection of the whole susceptor 13 located below the inlet opening, there is no overlapped part between the orthographic projection of the chamber lid 12 and the orthographic projection of the susceptor 13, so as to reduce the occurrence of the situation that the process byproducts deposited on the chamber lid 12 fall onto the susceptor 13, thereby reducing the process byproducts falling onto the susceptor 13, further improving the stability of the susceptor 13 adsorbing the substrate, reducing the cleaning frequency, saving manpower, and improving the production efficiency.
In practical applications, the orthographic projection of the entrance opening 14 may completely coincide with the orthographic projection of the susceptor 13, or may be larger than the orthographic projection range of the susceptor 13, that is, the inner peripheral wall of the entrance opening 14 may coincide with the outer peripheral wall of the susceptor 13 in the vertical direction, or may surround the outer side of the outer peripheral wall of the susceptor 13, and the larger the orthographic projection range of the entrance opening 14 is, that is, the farther the inner peripheral wall of the entrance opening 14 is from the outer peripheral wall of the susceptor 13 in the horizontal direction, the less likely the process by-products deposited on the chamber lid 12 will fall onto the susceptor 13. The term "the insulating cylinder is disposed on the chamber lid 12 and connected to the upper surface of the chamber lid 12" means that the insulating cylinder is disposed outside the chamber body 11 and fixedly connected to the surface of the chamber lid 12 outside the entrance opening, and does not extend into the chamber body 11 and does not shield the entrance opening 14.
In the present embodiment, the insulation barrel includes a barrel main body 15 and an annular connecting portion, wherein the inner diameter of the barrel main body 15 is smaller than the inner diameter of the entrance opening 14; the annular connecting portion cylinder main body 15 is connected to a side of the chamber lid 12 facing the outside of the chamber body 11, and the inside of the annular connecting portion communicates with the inlet opening 14 and the inside of the cylinder main body 15, respectively, and the minimum inside diameter of the annular connecting portion is greater than or equal to the inside diameter of the inlet opening 14.
Specifically, plasma can be generated in the cylinder main body 15 and the annular connecting portion, the plasma enters the chamber body 11 through the inlet opening 14, the minimum inner diameter of the annular connecting portion is greater than or equal to the inner diameter of the inlet opening 14, so that the plasma in the cylinder main body 15 can obtain a larger flow range after entering the annular connecting portion, a part of the plasma flows obliquely, so that the part of the plasma can flow towards the inner peripheral wall of the annular connecting portion, the process byproducts are prevented from being deposited on the inner peripheral wall of the annular connecting portion, the process byproducts deposited on the inner peripheral wall of the annular connecting portion are reduced, and the process byproducts falling onto the base 13 are further reduced.
In the present embodiment, the inner diameter of the annular connecting portion gradually increases from its end connected to the cylinder main body 15 to its other end connected to the chamber lid 12. Such a design can gradually increase the inner diameter of the annular connecting portion, so that a part of plasma always flows obliquely towards the inner peripheral wall of the annular connecting portion in the process of flowing through the annular connecting portion, and the plasma can flow to the inlet opening 14 along the surface of the inner peripheral wall of the annular connecting portion, thereby further reducing the process byproducts deposited on the inner peripheral wall of the annular connecting portion.
As shown in fig. 1 and 2, in the first embodiment of the present invention, the annular connecting portion includes a circular truncated cone connecting member 161, the circular truncated cone connecting member 161 is circular truncated cone-shaped, one end of the circular truncated cone connecting member 161 having the smallest inner diameter is connected to one end of the cylinder main body 15, and one end of the circular truncated cone connecting member 161 having the largest inner diameter is connected to the chamber cover 12. Specifically, a plane parallel to the bottom surface of the cone is used for cutting the cone, the part between the bottom surface and the cross section is called a circular truncated cone, the circular truncated cone is provided with two annular end surfaces with different inner diameters, wherein the annular end surface with the smallest inner diameter is connected with the cylinder main body 15, the annular end surface with the largest inner diameter is connected with the chamber cover 12, the inner peripheral wall of the circular truncated cone connecting piece 161 is arc-shaped, and edges and corners do not exist on the inner peripheral wall, so that the change of the flow direction of plasma due to the influence of the edges and corners can be avoided, the plasma is enabled to be more attached to the inner peripheral wall of the circular truncated cone connecting piece 161 in the process of flowing through the circular truncated cone connecting piece 161, and.
As shown in fig. 3, in the second embodiment of the present invention, the annular connecting portion includes a bending connecting member 162, one end of the bending connecting member 162 is connected to the tube main body 15 and extends in a direction perpendicular to the axis of the tube main body 15 toward the direction away from the tube main body 15, the other end is connected to the chamber lid 12 and extends in a direction parallel to the axis of the tube main body 15 toward the direction away from the chamber lid 12, and one end of the bending connecting member 162 connected to the tube main body 15 and the other end connected to the chamber lid 12 extend to intersect and connect. Specifically, the bent connector 162 has an "L" shape, one end of which is connected to the cylinder main body 15 and the other end of which is connected to the chamber cover 12.
The utility model provides an annular connecting portion in first embodiment and the second embodiment all have the effect of direction to the flow direction of plasma, promptly, all can make plasma in the in-process of flowing through annular connecting portion, the inclined towards the interior perisporium of annular connecting portion flows to reduce the technology accessory substance of deposit on the interior perisporium of annular connecting portion.
In the present embodiment, the annular connecting portion and the chamber lid 12 are connected to an end surface of the inlet opening 14 facing the outside of the chamber body 11. That is, the annular connection portions are respectively connected to the end surfaces of the cylinder main body 15 and the inlet opening 14 toward the outside of the chamber body 11, so that the plasma flowing into the inlet opening 14 along the surface of the inner peripheral wall of the annular connection portions can also perform a certain purge of the inner wall of the chamber lid 12, thereby further reducing the process by-products deposited on the chamber lid 12.
In this embodiment, the process chamber further includes a coil that is wound around the drum body 15, and an electric field generated by the coil can be applied to the inner wall of the drum body 15 and the annular connection portion.
Specifically, the coil is wound around the cartridge body 15 so as to excite the process gas flowing through the cartridge body 15 to form plasma, and the electric field generated by the coil has a cleaning action (as shown in the region a in fig. 2), i.e., the electric field generated by the coil can excite the process by-products deposited on the inner wall of the annular connection portion to generate plasma, thereby further reducing the process by-products deposited on the annular connection portion.
It should be noted that the cleaning effect of the electric field is reduced along with the weakening of the electric field strength, that is, the cleaning effect of the electric field is weaker the farther away from the coil, and the first embodiment and the second embodiment provided by the present invention can make the inner wall of the annular connecting portion closer to the coil, thereby improving the cleaning effect of the electric field generated by the coil and further reducing the process by-products deposited on the annular connecting portion.
In the present embodiment, the coil is a solid coil 17, and the solid coil 17 is wound around the cylinder body 15 and extends in the axial direction of the cylinder body 15 toward the direction close to the annular connection portion. The space coil 17 can enhance the excitation effect of the plasma in the cylinder main body 15, and can clean the inner wall of the annular connection portion by the electric field generated by the space coil. However, the form of the coil is not limited thereto.
In practical applications, the process chamber further includes a vacuum pumping device 18, the vacuum pumping device 18 is disposed at the bottom of the chamber body 11, and a discharge passage is disposed on the bottom wall of the chamber body 11, the discharge passage penetrates through the bottom wall of the chamber body 11 and is respectively communicated with the inside of the chamber body 11 and the vacuum pumping device 18, so that the vacuum pumping device 18 can pump out the process byproducts inside the chamber body 11.
Specifically, the interior of the chamber body 11 is pumped through the vacuumizing device 18, so that the process byproducts are pumped out from the interior of the chamber body 11, the environment in the chamber body 11 is purified, the cleaning frequency is reduced, the manpower is saved, and the production efficiency is improved.
In the present embodiment, the vacuum pumping device 18 may be a molecular pump, but the form of the vacuum pumping device 18 is not limited thereto.
The embodiment also provides semiconductor processing equipment which adopts the process chamber provided by the embodiment.
The semiconductor processing equipment provided by the embodiment reduces the process by-products falling onto the base 13 by means of the process chamber provided by the embodiment, thereby improving the stability of the base 13 for adsorbing the substrate, reducing the cleaning frequency, saving the manpower and improving the production efficiency.
In summary, the process chamber and the semiconductor processing apparatus provided by the embodiment can reduce the processing by-products dropping onto the susceptor 13, thereby improving the stability of the susceptor 13 adsorbing the substrate, reducing the cleaning frequency, saving the manpower, and improving the production efficiency.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A process chamber is characterized by comprising a chamber body, a chamber cover, a base and an insulating cylinder for generating plasma, wherein the chamber cover is arranged at the top of the chamber body, and an inlet opening for the plasma to enter the chamber body is formed in the chamber cover;
the insulating cylinder is arranged on the chamber cover and connected with the upper surface of the chamber cover, and the inside of the insulating cylinder is communicated with the inlet opening;
the base is arranged in the chamber body and is positioned below the inlet opening, and the orthographic projection of the inlet opening at least completely covers the whole orthographic projection of the base.
2. The process chamber of claim 1, wherein the insulating cylinder comprises a cylinder body and an annular connecting portion, wherein an inner diameter of the cylinder body is smaller than an inner diameter of the access opening;
the annular connecting part is connected with the cylinder main body and connected with one side, facing the outside of the chamber body, of the chamber cover, the inside of the annular connecting part is communicated with the inlet opening and the inside of the cylinder main body respectively, and the minimum inner diameter of the annular connecting part is larger than or equal to the inner diameter of the cylinder main body.
3. The process chamber of claim 2, wherein the annular coupling portion has an inner diameter that gradually increases from one end thereof coupled to the cartridge body to the other end thereof coupled to the chamber lid.
4. The process chamber of claim 3, wherein the annular coupling portion comprises a frustoconical coupling member having a smallest inner diameter coupled to an end of the cartridge body and a largest inner diameter coupled to the chamber lid.
5. The process chamber of claim 3, wherein the annular coupling portion comprises a flex connector coupled to the cartridge body at one end and extending away from the cartridge body in a direction perpendicular to an axis of the cartridge body and coupled to the chamber lid at another end and extending away from the chamber lid in a direction parallel to the axis of the cartridge body, and wherein the flex connector is coupled to the cartridge body at the one end and the chamber lid at the other end to intersect and couple.
6. The process chamber of any of claims 2-5, wherein the annular coupling and the chamber lid are coupled to an end surface of the access opening facing outward from the chamber body.
7. The process chamber of any of claims 2-5, further comprising a coil that surrounds the cartridge body and generates an electric field that covers the cartridge body and an inner wall of the annular coupling portion.
8. The process chamber of claim 7, wherein the coil is a solid coil that surrounds the drum body and extends in a direction along the axis of the drum body toward the annular connection.
9. The process chamber of claim 1, further comprising a vacuum pumping device disposed at a bottom of the chamber body and having a discharge passage disposed on a bottom wall of the chamber body, the discharge passage penetrating the bottom wall of the chamber body and being respectively communicated with the interior of the chamber body and the vacuum pumping device for pumping process byproducts inside the chamber body.
10. A semiconductor processing apparatus, characterized in that the process chamber according to any of claims 1-9 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921102089.7U CN210223960U (en) | 2019-07-15 | 2019-07-15 | Process chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921102089.7U CN210223960U (en) | 2019-07-15 | 2019-07-15 | Process chamber and semiconductor processing equipment |
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| Publication Number | Publication Date |
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| CN210223960U true CN210223960U (en) | 2020-03-31 |
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| CN201921102089.7U Active CN210223960U (en) | 2019-07-15 | 2019-07-15 | Process chamber and semiconductor processing equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871283A (en) * | 2021-09-28 | 2021-12-31 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
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2019
- 2019-07-15 CN CN201921102089.7U patent/CN210223960U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871283A (en) * | 2021-09-28 | 2021-12-31 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
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