CN103915307B - Plasma processing chamber and the gas injection apparatus for this plasma processing chamber - Google Patents
Plasma processing chamber and the gas injection apparatus for this plasma processing chamber Download PDFInfo
- Publication number
- CN103915307B CN103915307B CN201210593652.1A CN201210593652A CN103915307B CN 103915307 B CN103915307 B CN 103915307B CN 201210593652 A CN201210593652 A CN 201210593652A CN 103915307 B CN103915307 B CN 103915307B
- Authority
- CN
- China
- Prior art keywords
- gas
- inwall
- gas inlet
- pipes
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of plasma processing chamber and the gas injection apparatus for this plasma processing chamber, if the present invention arranges dry gas inlet at described annular gas flow in pipes inwall, and the direction making direction that described gas exports and described gas inlet point to the described annular gas flow in pipes center of circle is an acute angle, guarantee that gas forms the distribution of eddy current shape after injecting reaction chamber in dissociation, delay the speed that gas sinks, extend gas and arrive the distance travelled of substrate, gas is dissociated in dissociation as far as possible, compared with the gas inlet of traditional vertical described annular gas flow in pipes inwall, gas fall rate slows down, gas dissociation yield improves, thus improve the utilization ratio of reacting gas, simultaneously because plasma density raises in reaction chamber, improve etch rate.
Description
Technical field
The present invention relates to plasma etch apparatus gas provisioning technique field, particularly relate to a kind of raising gas
The gas conveying technology field of body dissociation efficiency.
Background technology
Plasma reactor or reaction chamber are commonly known in the art, and are widely used in quasiconductor collection
Becoming circuit, flat faced display, light emitting diode (LED), in the process industry of solaode etc..?
Plasma chamber would generally apply a radio-frequency power supply to produce and to maintain plasma in reaction chamber.Wherein,
Having many different modes to apply radio-frequency power, the design of each different modes will cause different characteristics,
Such as efficiency, plasma are dissociated, homogeneity etc..Wherein, a kind of design is inductive (ICP)
Plasma chamber.
In inductively coupled plasma processes chamber, an antenna being typically coiled type is in reaction chamber
Launch radio-frequency (RF) energy.In order to make to be coupled in reaction chamber from the radio-frequency power of antenna, place at antenna
One insulant window.Reaction chamber can process various substrate, such as Silicon Wafer etc., and substrate is fixed
On chuck, plasma produces above substrate.Therefore, antenna is placed on above reactor top board,
Reaction chamber top board is made up of insulant or includes an insulant window.
In plasma processing chamber, various gases are injected in reaction chamber so that ion and substrate it
Between chemical reaction and/or physical action can be used for forming various feature structure on the substrate, such as
Etching, deposition etc..In many technological processes, the etch rate of wafer and etching homogeneity are the heaviest
The index parameter wanted.One parameter contributing to obtaining preferable process uniformity is uniformly to divide in reaction chamber
Place's process gases of cloth.Obtaining such homogeneity, many reaction chambers are designed with being arranged on above wafer
Gas spray, to be uniformly injected into place's process gases.But, as it has been described above, at inductive (ICP)
Reaction chamber top board must include an insulation windows making radio-frequency power be transmitted into reaction chamber from antenna.Therefore,
The structure of ICP does not reserves corresponding space to realize what its gas was uniformly injected into gas spray
Function.
In current standard inductance coupled reaction chamber, gas by infusion appliance/shower nozzle around reaction chamber and
One of middle shower nozzle or both together inject and be fed in Dewar vessel.Use described in the method
Technology, reacting gas is easy to be diffused into the district of dissociating of Dewar vessel after linearly injecting in Dewar vessel
Then it is discharged Dewar vessel beyond territory, causes reacting gas too short at dissociation Dissociation time, dissociate
Insufficient, the utilization rate causing reacting gas is the highest, wastes reacting gas.
Therefore, need in the industry a kind of inductive reaction chamber gas injection apparatus that improves to design, can optimize
Gas distribution in reaction chamber, to improve the homogeneity of processing technique, improves the utilization ratio of reacting gas.
Summary of the invention
In order to solve the problems referred to above, the invention provides a kind of gas for plasma processing chamber and inject
Device, described device includes annular gas flow in pipes, if described annular gas flow in pipes inwall is arranged
Dry gas inlet, the direction of described gas output and described gas inlet point to described annular gas note
The direction entering the pipeline center of circle is an acute angle.
Preferably, described gas inlet quantity >=3, on described annular gas flow in pipes inwall all
Even distribution.
Preferably, the inner wall thickness of described annular gas flow in pipes is more than or equal to 1mm, and described gas is noted
Entrance is hole or the narrow slot penetrating described inwall, and the opening direction of described hole or narrow slot injects with described gas
It is an acute angle that mouth points to the direction in the described annular gas flow in pipes center of circle.
Preferably, described gas inlet includes hole or the narrow slot penetrating described inwall, each hole or narrow slot
Exit one baffle plate is set, described annular gas ascending pipe is pointed to gas inlet in described baffle plate direction
The direction in the center of circle, road is an acute angle.
Preferably, the hole or the narrow slot cut-out direction on described inwall that penetrate described inwall are perpendicular to described
Inwall or be other angles with described inwall；The shape of described baffle plate can be flat board, it is also possible to for band
There is the arc of certain radian.
Preferably, described gas inlet includes the hole penetrating described inwall or narrow slot and is positioned at hole or narrow slot
The nozzle of outgassing direction end, described annular gas ascending pipe is pointed to gas inlet in described nozzle direction
The direction in the center of circle, road is an acute angle.
Preferably, penetrate the hole of described inwall or narrow slot and at the cut-out direction of described inwall and be positioned at hole or narrow
The nozzle direction of groove outgassing direction end is identical or has certain angle.
Preferably, if the gas outbound course of described dry gas inlet points to institute with described gas inlet
The direction stating the annular gas flow in pipes center of circle is same acute angle.
The present invention also provides for a kind of inductive coupling plasma treatment appts, including metal sidewall and insulated top
The vacuum sealing housing that plate is constituted, arranges pedestal and is positioned at treating above pedestal in described vacuum sealing housing
Process substrate, and the radio-frequency power supply being applied to above described insulation top board on round antenna, described metal
Arranging a gas injection apparatus between sidewall and described insulation top board, described device includes annular gas ascending pipe
Road, if described annular gas flow in pipes inwall arranges dry gas inlet, the direction of described gas output
The direction pointing to the described annular gas flow in pipes center of circle with described gas inlet is an acute angle.
Preferably, described gas inlet is uniformly distributed on described annular gas flow in pipes inwall.
The invention has the advantages that: if the present invention arranges dry gas note at described annular gas flow in pipes inwall
Entrance, and make the direction that described gas exports point to described annular gas note with described gas inlet
The direction entering the pipeline center of circle is an acute angle, it is ensured that gas forms eddy current after injecting reaction chamber in dissociation
Shape is distributed, and extends gas and arrives the distance travelled of substrate, has delayed the speed that gas sinks so that gas
Body is dissociated in dissociation as far as possible, and in traditional vertical described annular gas flow in pipes
The gas inlet of wall is compared, and gas fall rate slows down, and gas dissociation yield improves, thus improves anti-
Answer the utilization ratio of gas, simultaneously because plasma density raises in reaction chamber, improve etch rate.
Accompanying drawing explanation
Fig. 1 is the reaction chamber structural representation of plasma etch apparatus residing for gas injection apparatus；
Fig. 2 is the gas injection apparatus cross-sectional view of a kind of embodiment；
Fig. 3 is the gas injection apparatus cross-sectional view of another kind of embodiment；
Fig. 4 is the gas injection apparatus cross-sectional view of another kind of embodiment；
Fig. 5 is the gas injection apparatus cross-sectional view of another kind of embodiment.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with this
Accompanying drawing in bright embodiment, is clearly and completely described the technical scheme in the embodiment of the present invention,
Obviously, described embodiment is a part of embodiment of the present invention rather than whole embodiments.Based on
Embodiment in the present invention, those of ordinary skill in the art are obtained under not making creative work premise
The every other embodiment obtained, broadly falls into the scope of protection of the invention.
Fig. 1 illustrates the reaction chamber structure of plasma etch apparatus residing for gas injection apparatus of the present invention
Schematic diagram, including plasma reaction chamber device 100 according to an embodiment of the invention.Should be appreciated that
Reaction chamber device 100 therein is merely exemplary, described 100 devices actually can also include more
Less or extra parts, the arrangement of parts may also be distinct from that shown in Fig. 1.
Fig. 1 shows inductive coupling plasm reaction cavity (ICP) according to a first embodiment of the present invention
Sectional view, it performs the feature of gas controlled flow.ICP reaction chamber 100 includes metal sidewall 105
With insulation top board 130, constitute an airtight vacuum sealing housing, and taken out very by vacuum pumping pump 125
Empty.Described insulation top board 130 is only used as example, it would however also be possible to employ other top board pattern, such as dome
Shape, with the metal top plate etc. of insulant window.Pedestal 110 supports chuck 115, described folder
Pending substrate 120 it is placed on dish.Bias power is applied on described chuck 115, but by
In unrelated with the embodiment of the present invention disclosed, the most not shown.The radio frequency of described radio-frequency power supply 145
Power is applied to antenna 140, and this antenna is substantially coiled type.
Reacting gas is in gas injection apparatus is injected into reaction chamber, to light and to maintain plasma, from
And substrate 120 is processed.In the present embodiment, gas passes through annular gas flow in pipes 150 quilt
It is fed in vacuum space, but extra gas can also be optionally from the center of insulation top board 130
Reaction chamber (not shown) is injected in region.Generally gas injects vacuum reaction chamber from gas injection apparatus,
After dissociation 160, the pump 125 that is evacuated quickly is discharged outside reaction chamber, and the degree of dissociation of gas is not
Height, the utilization rate causing reacting gas is the highest.
Fig. 2 illustrates the cross-sectional view of a kind of gas injection apparatus of the present invention, described gas
Injection device be annular gas injection line, in figure only part illustrate gas injection line inwall knot
Structure, described reacting gas is full of between described inwall 151 and outer wall (not shown), via gas
Body inlet 152 injects inside reaction chamber.Gas inlet 152 exists with the difference of traditional gas inlet
In: the vertical described inwall of traditional gas inlet points to the center of circle, gas inlet 152 of the present invention
Cut-out direction and gas inlet to point to the direction in the center of circle be an acute angle, gas inlet 152 is in annular
Gas injection line inwall is uniformly distributed, and usual quantity is even number, can also be strange in certain embodiments
Number, the present embodiment number is 8, in order to preferably realize the purpose of the present invention, multiple gas inlets
The direction that the cut-out direction of 152 points to the center of circle with gas inlet is same acute angle.
According to technical solutions according to the invention, reacting gas enters reaction chamber by gas inlet 152
Rear, to being not directed to the center of circle of annular gas flow in pipes, enters reaction from multiple gas inlets 152
The gas in chamber forms the gas distribution structure that an eddy current shape sinks, and changes reacting gas in traditional structure
The present situation sunk rapidly after entering reaction chamber and taken away by vacuum pump 125, extends gas and arrives substrate
Distance travelled, delay the speed that gas sinks, made the time that reacting gas is in dissociation 160
Increase so that reacting gas can fully dissociate, and improves gas utilization efficiency.
In embodiment of the present invention, reacting gas is entered anti-by the inner wall thickness of annular gas injection line
There is certain impact in the direction answering chamber, and thickness is crossed thin meeting and caused gas inlet 152 angle of inclination too small, instead
Answering gas can not form the distribution of obvious eddy current shape gas in reaction chamber, reaction gas is known from experience to sink also rapidly
Taken away by vacuum pump 125, it is impossible to play the purpose improving gas dissociation yield.Therefore annular gas in the present embodiment
Inwall 151 thickness of body flow in pipes is more than or equal to 1mm.
In a further embodiment, so that the angle of inclination that reacting gas injects reaction chamber becomes apparent from,
Simultaneously without increasing the thickness of annular gas flow in pipes inwall 151, it is also possible to use as shown in Figure 3
Embodiment, in the embodiment shown in fig. 3, the inwall 251 of annular gas flow in pipes is evenly arranged with
Several gas inlets 252, the cut-out direction of gas inlet 252 points to annular with gas inlet
The direction in the gas injection line center of circle is a sharp angle, and reacting gas enters via gas inlet 252
The distribution of eddy current shape gas can be formed at gas dissociation so that reacting gas is sufficiently solved after reaction chamber
From.Gas inlet in the present embodiment includes the otch on annular gas flow in pipes inwall 251 and sets
Putting inside otch, length is more than the gas nozzle 253 of inwall 251 thickness, gas nozzle 253 material
Identical with annular gas flow in pipes inwall, can be solid with inwall otch by modes such as welding or bondings
It is scheduled on together.Gas inlet 252 angle of inclination of the present embodiment is not limited by inner-walls of duct 251 thickness
System, can rationally arrange the length of gas nozzle 253 so that gas can form ideal after injecting reaction chamber
Eddy current shape is distributed, thus extends gas Dissociation time.
Fig. 4 is the gas injection apparatus cross-sectional view of another kind of embodiment, in the reality shown in Fig. 4
Execute in example, if being uniformly distributed dry gas inlet 352, gas on annular gas flow in pipes inwall 351
Inlet 352 gas outlet end arranges baffle plate 354.Gas note for the ease of making, in the present embodiment
The otch of entrance 352 can be with inner vertical walls 351, it is also possible to be easy to the angle of making in other, in order to reach
Being distributed to preferable air whirl, annular gas ascending pipe is pointed to gas inlet in the direction of baffle plate 354
The direction in the center of circle, road is a sharp angle, and in gas inlet 352, effluent air is through the resistance of baffle plate 354
Gear, the bearing of trend along baffle plate 354 enters in reaction chamber, end, each gas inlet 352 gas outlet
End arranges a baffle plate 354, and the shape of baffle plate 354 can be flat board, it is also possible to for certain radian
Baffle plate, the direction in the annular gas flow in pipes center of circle is pointed to gas inlet in the direction of all baffle plates 354
In same sharp angle, to guarantee that reacting gas is distributed in preferable eddy current shape in reaction chamber.Baffle plate 354
The end of the corresponding otch of inwall 351 can be welded on, it is also possible to easy by other those skilled in the art
The means realized are fixed, and the present invention repeats no more.
Fig. 5 is the gas injection apparatus cross-sectional view of another kind of embodiment, in the reality shown in Fig. 5
Execute in example, if being uniformly distributed dry gas inlet 452, gas on annular gas flow in pipes inwall 451
Inlet 452 gas outlet end arranges gas nozzle 455.For the ease of making, the gas in the present embodiment
The otch of body inlet 352 is perpendicular to inwall 351, in order to reach the distribution of preferable air whirl, gas
The direction that the annular gas flow in pipes center of circle is pointed to gas inlet in the direction of nozzle 455 is an acute angle angle
Degree, in gas inlet 452, effluent air is through the stop of gas nozzle 455, along gas nozzle 455
Bearing of trend enter in reaction chamber, each gas inlet 452 gas outlet end arranges a gas nozzle
455, the side in the annular gas flow in pipes center of circle is pointed to gas inlet in the direction of all gas nozzle 455
To in same sharp angle, to guarantee that reacting gas is distributed in preferable eddy current shape in reaction chamber.Gas
Nozzle 455 can be welded on the end of the corresponding otch of inwall 451, it is also possible to by other art technology
The means that personnel easily realize are fixed, and the present invention repeats no more.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should understanding
It is not considered as limitation of the present invention to the description above.Read above-mentioned those skilled in the art
After content, multiple amendment and replacement for the present invention all will be apparent from.Therefore, the present invention
Protection domain should be limited to the appended claims.
Claims (8)
1. a plasma treatment appts, the vacuum sealing housing constituted including metal sidewall and insulation top board, institute
Pedestal it is set in stating vacuum sealing housing and is positioned at the pending substrate above pedestal, and being applied to institute
State insulation top board top coil shape antenna on radio-frequency power supply, it is characterised in that: described metal sidewall and
Arranging a gas injection apparatus between described insulation top board, described gas injection apparatus includes that annular gas is noted
Enter pipeline, in described annular gas flow in pipes, fill reacting gas, described annular gas flow in pipes
Inner wall thickness is more than or equal to 1mm, if arranging dry gas inlet on it, and the side of described gas output
Angle to the direction pointing to the described annular gas flow in pipes center of circle with described gas inlet is one
Acute angle, described gas forms eddy current shape in described plasma processing chamber through described gas inlet and divides
Cloth, arrives the distance travelled of substrate in order to extend described gas, delays gas fall rate, improve gas
Body dissociation efficiency.
Plasma treatment appts the most according to claim 1, it is characterised in that: described gas inlet
Quantity >=3, are uniformly distributed on described annular gas flow in pipes inwall.
Plasma treatment appts the most according to claim 1, it is characterised in that: described gas inlet is
Penetrating hole or the narrow slot of described inwall, the opening direction of described hole or narrow slot refers to described gas inlet
Angle to the direction in the described annular gas flow in pipes center of circle is an acute angle.
Plasma treatment appts the most according to claim 1, it is characterised in that: described gas inlet bag
Including hole or the narrow slot penetrating described inwall, the exit of each hole or narrow slot arranges a baffle plate, described gear
Plate direction is one with the angle in the direction that gas inlet points to the described annular gas flow in pipes center of circle
Acute angle.
Plasma treatment appts the most according to claim 4, it is characterised in that: penetrate the hole of described inwall
Or the cut-out direction that narrow slot is on described inwall is perpendicular to described inwall or be other with described inwall
Angle；The shape of described baffle plate can be flat board, it is also possible to for the arc with certain radian.
Plasma treatment appts the most according to claim 1, it is characterised in that: described gas inlet bag
Include and penetrate hole or the narrow slot of described inwall and be positioned at hole or the nozzle of narrow slot outgassing direction end, described spray
Mouth direction is one with the angle in the direction that gas inlet points to the described annular gas flow in pipes center of circle
Acute angle.
Plasma treatment appts the most according to claim 6, it is characterised in that: penetrate the hole of described inwall
Or narrow slot at the cut-out direction of described inwall and is positioned at hole or the nozzle direction of narrow slot outgassing direction end
Identical or have certain angle.
Plasma treatment appts the most according to claim 1, it is characterised in that: if described dry gas injects
The gas outbound course of mouth points to the described annular gas flow in pipes center of circle with described gas inlet
The angle in direction is same acute angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210593652.1A CN103915307B (en) | 2012-12-31 | 2012-12-31 | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210593652.1A CN103915307B (en) | 2012-12-31 | 2012-12-31 | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103915307A CN103915307A (en) | 2014-07-09 |
| CN103915307B true CN103915307B (en) | 2016-08-17 |
Family
ID=51040905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210593652.1A Active CN103915307B (en) | 2012-12-31 | 2012-12-31 | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103915307B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180143332A1 (en) * | 2016-11-18 | 2018-05-24 | Plasma-Therm Llc | Ion Filter |
| CN107140447B (en) * | 2017-06-30 | 2023-05-16 | 华能白山煤矸石发电有限公司 | Dust suppression device in power plant slag discharge or ash discharge process |
| CN111146063B (en) * | 2018-11-02 | 2022-04-08 | 江苏鲁汶仪器有限公司 | Air inlet system of plasma reaction cavity |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87104235A (en) * | 1986-06-13 | 1988-02-24 | 珀金·埃尔默公司 | The plasma torch of adjustable cathode |
| CN1652996A (en) * | 2002-05-17 | 2005-08-10 | 株式会社Npc | Inductively coupled plasma reactor for producing nano-powder |
| CN201182036Y (en) * | 2007-02-01 | 2009-01-14 | 应用材料股份有限公司 | Gas injection nozzle |
| CN101465276A (en) * | 2007-12-19 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device and semiconductor processing equipment applying the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003158127A (en) * | 2001-09-07 | 2003-05-30 | Arieesu Gijutsu Kenkyu Kk | Method and device for forming film and semiconductor device |
| US7691755B2 (en) * | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
| CN202616186U (en) * | 2012-03-23 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma etching chamber |
-
2012
- 2012-12-31 CN CN201210593652.1A patent/CN103915307B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87104235A (en) * | 1986-06-13 | 1988-02-24 | 珀金·埃尔默公司 | The plasma torch of adjustable cathode |
| CN1652996A (en) * | 2002-05-17 | 2005-08-10 | 株式会社Npc | Inductively coupled plasma reactor for producing nano-powder |
| CN201182036Y (en) * | 2007-02-01 | 2009-01-14 | 应用材料股份有限公司 | Gas injection nozzle |
| CN101465276A (en) * | 2007-12-19 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device and semiconductor processing equipment applying the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103915307A (en) | 2014-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5905503B2 (en) | Liner assembly and substrate processing apparatus having the same | |
| CN102355792B (en) | Improve the inductively coupled plasma device of plasma uniformity and efficiency | |
| KR100988085B1 (en) | High density plasma processing apparatus | |
| US9095038B2 (en) | ICP source design for plasma uniformity and efficiency enhancement | |
| CN101258786A (en) | Plasma processing equipment, plasma processing method, dielectric window for use therein and method for producing the same | |
| KR20060103334A (en) | Plasma film-forming apparatus and plasma film-forming method | |
| CN103915307B (en) | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber | |
| TWI581303B (en) | Gas guide ring, gas supply device and induction coupling plasma processing device | |
| CN103695868A (en) | Linear plasma-enhanced chemical vapor deposition system with remote magnetic-mirror field constraint | |
| CN103114278B (en) | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device | |
| CN202616186U (en) | Inductive coupling plasma etching chamber | |
| CN104103484A (en) | Gas supplying device and plasma processing device | |
| CN102395243A (en) | Inductance coupling plasma device for improving uniformity and efficiency of plasmon | |
| CN104733275A (en) | Plasma process device | |
| CN103874314B (en) | A kind of inductively coupled plasma device | |
| TWI662586B (en) | Gas injection device, manufacturing method thereof and plasma treatment device applied thereto | |
| CN107306473B (en) | A kind of semiconductor processing device and the method for handling substrate | |
| CN210223960U (en) | Process chamber and semiconductor processing equipment | |
| TWI575556B (en) | Electrolyte processing device | |
| TWI424796B (en) | Plasma processing device with diffusion dissociation region | |
| CN208857359U (en) | Equipment for producing thin film and its reaction cavity | |
| CN106937474B (en) | Inductively coupled plasma processor | |
| JP2005223079A (en) | Surface wave excitation plasma cvd apparatus | |
| KR101781290B1 (en) | Large scale Surface Wave Plasma Device and Conductive Diamond Coating using the Device | |
| CN112786420B (en) | Plasma processing device and method for processing substrate by using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |