CN111146063B - Air inlet system of plasma reaction cavity - Google Patents
Air inlet system of plasma reaction cavity Download PDFInfo
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- CN111146063B CN111146063B CN201811299284.3A CN201811299284A CN111146063B CN 111146063 B CN111146063 B CN 111146063B CN 201811299284 A CN201811299284 A CN 201811299284A CN 111146063 B CN111146063 B CN 111146063B
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- plasma reaction
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- inner ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Abstract
The invention discloses a plasma reaction cavity air inlet system which comprises a central air inlet hole arranged at the upper part of a plasma reaction cavity, a marginal air inlet hole arranged at the edge of the plasma reaction cavity, and an air homogenizing inner ring, wherein the surface of the air homogenizing inner ring is provided with an air guide hole, and the air guide hole can be arranged in the plasma reaction cavity in a manner of rotating around the axial direction. According to the invention, a certain included angle is formed between the air guide hole and the radial direction of the air-homogenizing inner ring, and the air-homogenizing inner ring rotates around the axial direction under the action of high-speed air flow by utilizing high-speed air sprayed from the air guide hole, so that the effect of highly symmetrical distribution of the air flow is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a plasma reaction cavity air inlet system.
Background
Plasma etching is the most common form of dry etching, and is based on the principle that a gas exposed to an electron field forms a plasma, thereby generating ionized gas and a gas composed of released energetic electrons, thereby forming plasma or ions, and atoms of the ionized gas, when accelerated by an electric field, release enough force to tightly adhere to a material or etch a surface with surface expulsion force.
Plasma etching is a common processing tool in integrated circuits and is widely used in sub-micron technology zones. Inductively Coupled Plasma Etching (ICPE) is the result of the combined action of chemical and physical processes. The basic principle is that under vacuum low pressure, radio frequency generated by an ICP radio frequency power supply is output to a toroidal coupling coil, mixed etching gas in a certain proportion is coupled with glow discharge to generate high-density plasmas, the plasmas bombard the surface of a substrate under the action of the RF radio frequency of a lower electrode, chemical bonds of semiconductor materials in a substrate pattern area are broken, volatile substances are generated with the etching gas and separated from the substrate in a gas form, and the volatile substances are pumped away from a vacuum pipeline. ICP is not suitable for designing a showerhead gas inlet system similar to a capacitively coupled plasma etcher (CCP) because the upper part requires a wound coil, and a central nozzle gas inlet method is mainly used for 8 inches and below, as shown in fig. 1. As the size of the wafer grows to 12 inches, uniformity is ensured by adding edge compensation gas, as shown in fig. 2. A plurality of air inlet holes (for example, 8) are added at the edge of the cavity, and the edge air path is distributed into a plurality of edge air holes. Because the air pressure is generally in mT level in the process and the diameter of the loop is larger than 12 inches, the pressure difference is generated between the total air path and a plurality of nozzles, so that the problem that the uniformity is influenced by the asymmetry of the process result exists, and the difficulty of designing how to make the edge air inlet uniform and symmetrical is caused.
Disclosure of Invention
In order to solve the above problems, the present invention discloses an air intake system of a plasma reaction chamber, which comprises a central air inlet hole arranged at the top of the plasma reaction chamber and an edge air inlet hole arranged at the edge of the plasma reaction chamber, and further comprises: the surface of the gas-homogenizing inner ring is provided with gas guide holes and is arranged in the plasma reaction cavity in a manner of rotating around the axial direction.
In the gas inlet system of the plasma reaction chamber of the present invention, preferably, the gas homogenizing inner ring is disposed in the plasma reaction chamber through a slide rail.
In the plasma reaction cavity air inlet system, preferably, the air guide hole and the radial direction of the air-homogenizing inner ring form a certain included angle, and when gas is introduced through the central air inlet hole and the edge air inlet hole, the air-homogenizing inner ring rotates around the axial direction.
In the gas inlet system of the plasma reaction chamber, preferably, an included angle formed by the gas guide hole and the radial direction of the gas homogenizing inner ring is 1-89 degrees.
In the air inlet system of the plasma reaction chamber, the diameter of the air guide hole is preferably 0.1 mm-10 mm.
In the gas inlet system of the plasma reaction chamber, preferably, the slide rail includes an upper part and a lower part, the upper part and the lower part of the slide rail are respectively provided with an opening, the upper part of the slide rail is arranged on the upper part of the chamber wall in the plasma reaction chamber in a manner that the opening faces downwards, the lower part of the slide rail is arranged on the lower part of the chamber wall in the plasma reaction chamber in a manner that the opening faces upwards, and the gas-homogenizing inner ring is arranged between the upper part of the slide rail and the lower part of the slide rail.
In the gas inlet system of the plasma reaction chamber, the opening is preferably in a V shape, a U shape or an O shape, when the opening is in the V shape, the angle of the opening is 20-80 degrees, when the opening is in the U shape, the width and height ranges from 0.1mm to 20mm, and when the opening is in the O shape, the diameter range of the opening is 0.1mm to 20 mm.
In the gas inlet system of the plasma reaction chamber, preferably, the material of the gas-homogenizing inner ring is oxide ceramic, quartz, glass, metal resistant to plasma corrosion or organic polymer resistant to plasma corrosion.
In the gas inlet system of the plasma reaction chamber, the wall thickness of the gas homogenizing inner ring is preferably 0.1 mm-10 mm.
In the air inlet system of the plasma reaction cavity, the size of the edge air inlet is preferably 0.1-4 mm multiplied by 0.1-4 mm.
In the gas inlet system of the plasma reaction chamber, preferably, the number of the gas-homogenizing inner rings is 1 or more, and a plurality of coaxial gas-homogenizing inner rings are distributed in different diameters along the radial direction of the plasma reaction chamber or along different height areas in the axial direction of the plasma reaction chamber.
In the gas inlet system of the plasma reaction chamber, preferably, the gas homogenizing inner ring is driven by a motor to rotate around the axial direction.
In the air inlet system of the plasma reaction chamber, preferably, the central air inlet hole circularly moves at a certain speed so as to ensure that the airflow is highly symmetrically distributed, and the speed is between 1 r/s and 10000 r/s.
According to the invention, a certain included angle is formed between the air guide hole and the radial direction of the air-homogenizing inner ring, and the air-homogenizing inner ring rotates around the axial direction under the action of high-speed air flow by utilizing high-speed air sprayed from the air guide hole, so that the effect of highly symmetrical distribution of the air flow is achieved.
Drawings
FIG. 1 is a schematic diagram of a plasma reaction chamber using a central nozzle gas inlet method in the prior art.
FIG. 2 is a schematic diagram of a prior art plasma reaction chamber with increased edge nozzle gas feed.
FIG. 3 is a schematic top view of the gas inlet system of the plasma reaction chamber of the present invention.
FIG. 4 is a schematic cross-sectional view of a slide rail of the gas inlet system of the plasma reaction chamber according to the present invention.
In the figure:
1-plasma reaction chamber; 2-edge air inlet holes; 3-air homogenizing inner ring; 4-air guide holes; 5, sliding a rail; 6-the upper part of the slide rail; 7-the lower part of the slide rail; 8-V-shaped structure opening.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
The invention discloses a plasma reaction cavity air inlet system, which comprises a central air inlet hole arranged at the top of a plasma reaction cavity 1, an edge air inlet hole 2 arranged on the side wall of the plasma reaction cavity, and an air homogenizing inner ring 3, wherein the surface of the air homogenizing inner ring is provided with an air guide hole 4, and the air guide hole 4 is arranged in the plasma reaction cavity 1 through a slide rail 5. The air guide hole 4 and the inner air homogenizing ring 3 form a certain included angle theta in the radial direction, and when air is introduced through the central air inlet hole and the edge air inlet holes 2, the inner air homogenizing ring 3 can rotate around the axial direction. FIG. 3 is a schematic top view of the gas inlet system of the plasma reaction chamber of the present invention. The radial angle θ of the gas holes to the gas uniformity inner ring is shown in FIG. 3, where AB represents the centerline of the gas holes and OB represents the radial direction of the gas uniformity inner ring. The direction of the airflow is also schematically indicated by arrows in fig. 3. Further preferably, the radial included angle theta between the air guide hole and the air homogenizing inner ring is between 1 degree and 89 degrees. The material of the gas homogenizing inner ring can adopt oxide ceramics, quartz, glass, metal resistant to plasma corrosion, organic polymer resistant to plasma corrosion and the like. The wall thickness of the air-homogenizing inner ring is between 0.1mm and 10 mm. The diameter of the air guide hole is between 0.1mm and 4 mmm. The size of the edge air inlet hole is 0.1-4 mmm multiplied by 0.1-4 mmm.
In a specific example, as shown in fig. 4, the slide rail 5 includes two upper and lower portions 6,7, and the two upper and lower portions of the slide rail are respectively provided with V-shaped openings 8. The upper part 6 of the slide rail is arranged on the upper part of the inner cavity wall of the plasma reaction cavity 1 in a mode that the V-shaped structure opening 8 is in an inverted V shape. The lower part 7 of the slide rail is arranged at the lower part of the inner cavity wall of the plasma reaction cavity 1 in a V-shaped mode with a V-shaped structure opening 8. The air-homogenizing inner ring 3 is arranged between the upper part 6 of the slide rail and the lower part 7 of the slide rail. The angle of the V-shaped structure opening 8 is between 20 and 80 degrees. However, the present invention is not limited to this, and the slide rail may have another structure as long as the gas-uniformizing inner ring can be mounted in the plasma reaction chamber and can be axially rotated. The opening may have a U-shaped configuration, an O-shaped configuration, or the like, and when the opening is U-shaped, the width and height of the opening may range from 0.1mm to 20mm, and when the opening is O-shaped, the diameter of the opening may range from 0.mm to 20 mm.
According to the invention, a certain included angle is formed between the air guide hole and the radial direction of the air-homogenizing inner ring, and the air-homogenizing inner ring rotates around the axial direction under the action of high-speed air flow by utilizing high-speed air sprayed from the air guide hole, so that the effect of highly symmetrical distribution of the air flow is achieved. However, the present invention is not limited to this, and the air uniforming inner ring may be axially rotated by the external motor. In addition, the central air inlet hole positioned at the top of the cavity can also make circular motion relative to the processed wafer at a certain speed so as to achieve the effect of highly symmetrical air flow, and the rotation speed can be between 1 and 10000 revolutions per second.
While the present invention has been described in detail with reference to the preferred embodiments of the plasma reaction chamber gas inlet system, the present invention is not limited thereto. For example, the gas homogenizing inner ring is not limited to be arranged on the side wall of the cavity, and can also be arranged on the dielectric window at the top of the cavity and can also be arranged on the focusing ring. The corresponding edge air inlet hole can also be correspondingly arranged on the focusing ring, the medium window and the like. In addition, the gas-homogenizing inner ring is not limited to be installed in a sliding rail mode, and can be installed in other modes as long as the gas-homogenizing inner ring can rotate around the axial direction, and gas entering from the edge gas inlet can be uniformly distributed. In addition, the gas homogenizing inner ring can be a plurality of gas homogenizing inner rings, and the coaxial gas homogenizing rings can be distributed along the radial direction of the plasma reaction cavity in different diameters or can be distributed in different height areas along the axial direction of the plasma reaction cavity.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (10)
1. A plasma reaction cavity air inlet system comprises a central air inlet hole arranged at the top of a plasma reaction cavity and a marginal air inlet hole arranged at the edge of the plasma reaction cavity, and is characterized in that,
further comprising:
the surface of the gas-homogenizing inner ring is provided with gas guide holes, the gas-homogenizing inner ring is arranged in the plasma reaction cavity through slide rails, and the gas guide holes and the gas-homogenizing inner ring form a certain included angle in the radial direction, so that when gas is introduced through the center gas inlet hole and the edge gas inlet hole, the gas-homogenizing inner ring rotates around the axial direction.
2. The plasma reaction chamber gas inlet system of claim 1,
the radial included angle between the air guide hole and the air-homogenizing inner ring is 1-89 degrees.
3. The plasma reaction chamber gas inlet system of claim 1,
the diameter of the air guide hole is 0.1 mm-10 mm.
4. The plasma reaction chamber gas inlet system of claim 1,
the slide rail comprises an upper part and a lower part, the upper part and the lower part of the slide rail are respectively provided with an opening, the upper part of the slide rail is arranged on the upper part of the cavity wall in the plasma reaction cavity in a mode that the opening faces downwards, the lower part of the slide rail is arranged on the lower part of the cavity wall in the plasma reaction cavity in a mode that the opening faces upwards, and the gas-homogenizing inner ring is arranged between the upper part of the slide rail and the lower part of the slide rail.
5. The plasma reaction chamber gas inlet system of claim 4,
the opening is V-shaped, U-shaped or O-shaped, when the opening is V-shaped, the angle of the opening is 20-80 degrees, when the opening is U-shaped, the width and height ranges from 0.1mm to 20mm, when the opening is O-shaped, the diameter range of the opening is 0.1mm to 20 mm.
6. The plasma reaction chamber gas inlet system of claim 1,
the gas-homogenizing inner ring material is made of oxidized ceramics, quartz, glass, plasma corrosion resistant metal or plasma corrosion resistant organic polymer.
7. The plasma reaction chamber gas inlet system of claim 1,
the wall thickness of the gas homogenizing inner ring is 0.1 mm-10 mm.
8. The plasma reaction chamber gas inlet system of claim 1,
the size of the edge air inlet hole is 0.1 mm-4 mm multiplied by 0.1-4 mm.
9. The plasma reaction chamber gas inlet system of claim 1,
the number of the gas homogenizing inner rings is 1 or more, and the coaxial gas homogenizing inner rings are distributed along the radial direction of the plasma reaction cavity in different diameters or are distributed along different height areas in the axial direction of the plasma reaction cavity.
10. The plasma reaction chamber gas inlet system of claim 1,
the central air inlet hole makes circular motion at a certain speed so as to ensure that the airflow is highly symmetrically distributed, and the speed is between 1 and 10000 revolutions per second.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811299284.3A CN111146063B (en) | 2018-11-02 | 2018-11-02 | Air inlet system of plasma reaction cavity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811299284.3A CN111146063B (en) | 2018-11-02 | 2018-11-02 | Air inlet system of plasma reaction cavity |
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| CN111146063A CN111146063A (en) | 2020-05-12 |
| CN111146063B true CN111146063B (en) | 2022-04-08 |
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| CN113205993A (en) * | 2021-04-22 | 2021-08-03 | 江苏微凯机械有限公司 | Sintered metal gas distribution ring for plasma |
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| JP4177192B2 (en) * | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | Plasma etching apparatus and plasma etching method |
| US9277637B2 (en) * | 2010-11-17 | 2016-03-01 | Tokyo Electron Limited | Apparatus for plasma treatment and method for plasma treatment |
| CN102424955B (en) * | 2011-11-29 | 2013-05-22 | 中国科学院微电子研究所 | Novel gas-homogenizing structure |
| CN103915307B (en) * | 2012-12-31 | 2016-08-17 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber |
| JP6388553B2 (en) * | 2015-03-03 | 2018-09-12 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
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Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No. 8, Liaohe West Road, Pizhou Economic Development Zone, Pizhou City, Xuzhou City, Jiangsu Province Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |
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