CN103114278B - Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device - Google Patents
Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device Download PDFInfo
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- CN103114278B CN103114278B CN201310047937.XA CN201310047937A CN103114278B CN 103114278 B CN103114278 B CN 103114278B CN 201310047937 A CN201310047937 A CN 201310047937A CN 103114278 B CN103114278 B CN 103114278B
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Abstract
The invention discloses a planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device comprising a vacuum cavity, a microwave resonance cavity, a microwave antenna, microwave waveguides and microwave generators, wherein the microwave resonance cavity is arranged inside the vacuum cavity; the microwave antenna is assembled inside the microwave resonance cavity and axially penetrates through the microwave resonance cavity; two ends of the outer side of the vacuum cavity are respectively provided with the microwave generators; the two microwave generators are respectively connected with two ends of the microwave antenna through the microwave waveguides; a planar magnetic control plate is arranged between the vacuum cavity and the microwave resonance cavity; a sample to be plated with a film is arranged between the microwave resonance cavity and the planar magnetic control plate; and the microwave resonance cavity is internally provided with a plurality of gas spraying pipes. The planar magnetic control plate disclosed by the invention utilizes a hard magnetic material to generate a planar magnetic field to enhance the ionization efficiency of reaction gas and improve the film plating uniformity; and the planar magnetic control ECR-PECVD plasma source device has the advantages of high film plating speed and high film layer uniformity and is applicable to plating various thin films.
Description
Technical field
The present invention relates to the plasma source technical field for plasma enhanced chemical vapor deposition, specifically a kind of plane magnetic control ECR-PECVD plasma source apparatus.
Background technology
Plasma reinforced chemical vapour deposition (that is: PECVD) is a kind of well-known vacuum coating technology, and oneself is through being employed decades.Use pecvd process, can in various substrate depositing electrically conductive film and non-conductive film.
Traditional PECVD device, there is condenser coupling thus activated plasma by radio-frequency power supply in its plasma source, be therefore called as radio frequency-PECVD (RF-PECVD) between two panels parallel pole.The plasma source of this kind of PECVD device, not easily obtains good homogeneity in big area, and plated film speed is lower, should not be applied to the production equipment of big area, high production capacity.
The plasma source of another ECR-PECVD device, adopts microwave surface Wave coupling to produce plasma body.This kind of PECVD device adopts the vacuum vessel of cylindrical structure usually, microwave is introduced from an end face of cylinder, plated film sample is positioned at other one end of cylinder, at the outside of round shape vacuum vessel parcel solenoid, the magnetic field of solenoid makes electronics produce spin resonance, is therefore called as spectrum-PECVD (ECR-PECVD).The RF-PECVD that the plated film speed ratio of ECR-PECVD device is traditional improves a lot, but is still only applicable to the production of small area short run.
A kind of linear microwave PECVD technology is also own known by those skilled in the art, and is widely used in big area, high production capacity, continous way film coating apparatus.This technology adopts monopole microwave antenna to feed-in microwave power in vacuum vessel, and utilizes the silica tube of the outer sleeve of antenna to produce coaxial coupling generation plasma body.Vacuum vessel is generally flat rectangular structure, and microwave antenna is that a circle is directly excellent, transverse crossing vacuum vessel.Microwave power is by the two ends feed-in of two microwave power supplys from antenna, and for each microwave power supply, the microwave power of its feed-in is linearly decayed along antenna axial direction, and the power of two ends feed-in is superimposed upon antenna axial direction formation and is uniformly distributed.Therefore, this kind of PECVD device is called as linear microwave PECVD (LM-PECVD).In this kind of PECVD device, sample moves with uniform velocity along the direction perpendicular to antenna axis, thus obtains uniform coated in big area.
Although linear microwave PECVD device, possesses good homogeneity from microwave power distribution, the homogeneity of PECVD plated film also has much relations with the concentration distribution of reactant gases.Be applied to the production equipment of big area, high production capacity PECVD plated film, generally the horizontal wide cut of coating film area done to obtain very large (>=10OOmm).In the coating film area of large wide cut, accomplish that reactant gases is uniformly distributed and is not easy, so will really obtain Large-Area-Uniform plated film, still need and take other supplementary units.
Summary of the invention
The present invention is directed to above shortcomings in prior art, provide a kind of plane magnetic control ECR-PECVD plasma source apparatus, mountain of the present invention microwave excited plasma, and under flat magnetic field effect, spectrum occurs.
The present invention is achieved by the following technical solutions.
A kind of plane magnetic control ECR-PECVD plasma source apparatus, comprise vacuum chamber, microwave resonator, microwave antenna, microwave waveguide and microwave generator, wherein, described microwave resonator is arranged on the inside of vacuum chamber; Described microwave antenna is assemblied in microwave resonator, and axially runs through whole microwave resonator; Close both ends place outside described vacuum chamber is respectively equipped with microwave generator, and described two microwave generators are connected with the two ends of microwave antenna respectively by microwave waveguide; Be provided with plane magnetic control plate between described vacuum chamber and microwave resonator, sample to be coated is arranged between microwave resonator and plane magnetic control plate; Some gas injection tubes are also provided with in described microwave resonator.
Described microwave resonator is trench structure, and the side of microwave resonator is provided with opening, and described plane magnetic control plate is arranged on the side of microwave resonator opening, and described sample to be coated is arranged on the opening part of microwave resonator.
Gap is provided with between described microwave resonator and plane magnetic control plate.
Described microwave resonator is metal material.
Described microwave antenna is cylindrical monopole microwave antenna, and the outside sleeve of microwave antenna has circular quartz pipe or vitrified pipe.
Described arbitrary gas injection tube is provided with reactant gases spout and precursor gas spout.
Described plane magnetic control plate comprises pole shoe, some magnet steel, water-cooled tube.Described some magnet steel are adsorbed on pole shoe, and described water-cooled tube is pressed on pole shoe.
Described magnet steel is 3, and comprise two both sides magnet steel and 1 central magnet steel, described both sides magnet steel is separately positioned on the dual-side edge of pole shoe, and described central magnet steel is arranged on the mid-way between the magnet steel of both sides.
Described plane magnetic control plate also comprises protective guard, and described pole shoe, some magnet steel and water-cooled tube are all arranged on the inside of protective guard.
Described pole shoe is soft magnetic materials, and described magnet steel is hard magnetic material, and described protective guard is non-magnetic material.
Plane magnetic control ECR-PECVD plasma source apparatus provided by the invention, in the coating film area of linear microwave plasma source, fitting plane magnetic control plate, this plane magnetic control plate uses hard magnetic material to produce flat magnetic field, make electronics issue raw spin resonance at the action of a magnetic field, thus play intensified response ionisation of gas efficiency, improve the effect of plated film homogeneity, have the advantage of high plated film speed, high membrane uniformity concurrently, be applicable to being coated with of various film.
Accompanying drawing explanation
Fig. 1 is the axial sectional structure of the present invention;
Fig. 2 is radial section structure of the present invention;
Fig. 3 is plane magnetic control plate structure schematic diagram of the present invention;
In figure: 1 is vacuum chamber, 2 is microwave resonator, and 3 is microwave antenna; 4 is silica tube, and 5 is microwave waveguide, and 6 is microwave generator; 7 is precursor gas spout, and 8 is reactant gases spout, and 9 is sample to be coated; 10 is plane magnetic control plate, and 11 is magnetic field, and 101 is pole shoe; 102 is central magnet steel, and 103 is both sides magnet steel, and 104 is water-cooled tube; 105 is protective guard, and 106 is magnetic line of force.
Embodiment
Below embodiments of the invention are elaborated: the present embodiment row that spouts under premised on technical solution of the present invention is implemented, and give detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As depicted in figs. 1 and 2; the plane magnetic control ECR-PECVD plasma source apparatus of the present embodiment; comprise vacuum chamber 1, microwave resonator 2, microwave antenna 3, microwave waveguide 5 and microwave generator 6, wherein, described microwave resonator 2 is arranged on the inside of vacuum chamber 1; Described microwave antenna 3 is assemblied in microwave resonator 2, and axially runs through whole microwave resonator 2; Close both ends place outside described vacuum chamber 1 is respectively equipped with microwave generator 6, and described two microwave generators 6 are connected respectively by the two ends of microwave waveguide 5 with microwave antenna 3; Be provided with plane magnetic control plate 10 between described vacuum chamber 1 and microwave resonator 2, sample 9 to be coated is arranged between microwave resonator 2 and plane magnetic control plate 10; Some gas injection tubes are also provided with in described microwave resonator 2.
Further, described microwave resonator 2 is poor type structure, and the side of microwave resonator 2 is provided with opening, and described plane magnetic control meal 10 is arranged on the side of microwave resonator 2 opening, and described sample 9 to be coated is arranged on the opening part of microwave resonator 2.
Further, certain gap is provided with between described microwave resonator 2 and plane magnetic control plate 10.
Further, described microwave resonator 2 is metal material.
Further, described microwave antenna 3 is cylindrical monopole microwave antenna, and its outside sleeve has circular quartz pipe or vitrified pipe.
Further, described arbitrary gas injection tube is provided with reactant gases spout 8 and precursor gas spout 7.
Be specially, certain gaseous tension is maintained by vacuum system in vacuum chamber 1, be generally a few handkerchief to hundreds of handkerchief, reactant gases is sprayed in microwave resonator 2 by gas injection tube, the power that microwave generator 6 sends is launched by microwave antenna 3 by microwave waveguide 5, microwave power is limited in the microwave resonator 2 that made by metallic substance, gas is by microwave electromagnetic field excitation generation glow discharge, produce plasma body, stimulated gas molecule or ion generation chemical reaction, the solid matter of generation forms film at sample 9 surface deposition to be coated.The magnetic field 11 that plane magnetic control plate is formed makes the electronics generation spin resonance in plasma body, enhances the activation efficiency of gas molecule.Meanwhile, the charged ion in plasma body is for the helical movement in magnetic field, produces stirring action, make the concentration distribution of gas more even to reactant gases.From the microwave power supply of microwave antenna one end feed-in, under the effect of silica tube outer wall surface ripple, linearly decay; After the microwave power superposition of two ends feed-in, microwave antenna axis direction is evenly distributed.Sample to be coated makes uniform motion on the direction perpendicular to microwave antenna axis, thus obtains uniform depositional coating.The microwave antenna length of present embodiment and the horizontal amplitude of sedimentation tank can reach more than 10OOmn, and namely the wide cut of product can reach more than 10OOmm; Because coating process realizes at the volley, thus product length direction does not limit in principle.Plane magnetic control ECR-PECVD plasma source apparatus in present embodiment is applicable to the plated film of the product of big area product or wide cut band shape very much.
Further, as shown in Figure 3, described plane magnetic control plate 10 comprises pole shoe 101, some magnet steel, water-cooled tube 104, and described some magnet steel are adsorbed on pole shoe 101, and described water-cooled tube 104 is pressed on pole shoe 101.
Further, described magnet steel is 3, and comprise two both sides magnet steel 103 and 1 central magnet steel 102, described both sides magnet steel 103 is separately positioned on the dual-side edge of pole shoe 101, and described central magnet steel 102 is arranged on the mid-way between both sides magnet steel 103.
Further, described plane magnetic control plate 10 also comprises protective guard 105, and described pole shoe 101, some magnet steel and water-cooled tube 104 are all arranged on the inside of protective guard 105.
Further, described pole shoe 101 is soft magnetic materials, and described magnet steel is hard magnetic material, and described protective guard 105 is non-magnetic material.
Be specially, the pole shoe 101 having soft magnetic materials to make is as the base plate of plane magnetic control plate; Central authorities' magnet steel 102 and both sides magnet steel 103 are adsorbed on pole shoe 101, and use suitable mode to position; Magnet steel adopts hard magnetic material, and can be the materials such as ferrite, neodymium iron boron, three brills, magnet steel magnetizes to the intensity of the electronics generation spin resonance that can make in resonator cavity; Water-cooled tube 104 is pressed on pole shoe 101, cools pole shoe and magnet steel, prevents magnet steel from high temperature demagnetizing; Protective guard 105 protects magnet steel not by the pollution of Coating Materials, plays certain heat-blocking action simultaneously, and the non-magnetic materials such as protective guard stainless steel make, and magnetic field can be made to pass through protective guard undampedly; The configuration structure of magnet steel 102 and 103 and pole shoe, forms the magnetic line of force 106 of schematic structure at the working face of plane magnetic control meal.When this plane magnetic control plate is applied in the ECR-PECVD plasma source apparatus shown in Fig. 1; when in plasma body, the charged ion of disordered motion enters the effective magnetic field scope of plane magnetic control plate; its direction of motion changes, for the helical movement in magnetic field, plays the effect of stirring; Meanwhile, charged ion by part local, is made the gas concentration within the scope of effective magnetic field relatively high, can improve plated film speed in magnetic field.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (8)
1. a plane magnetic control ECR ?PECVD plasma source apparatus, it is characterized in that, comprise vacuum chamber, microwave resonator, microwave antenna, microwave waveguide, microwave generator and plane magnetic control plate, wherein, described microwave resonator laterally runs through the inside being arranged on vacuum chamber; Described microwave antenna is assemblied in microwave resonator, and axially runs through whole microwave resonator; Close both ends place outside described vacuum chamber is respectively equipped with microwave generator, and two microwave generators are connected with the two ends of microwave antenna respectively by microwave waveguide; Described microwave resonator is trench structure, and the side of microwave resonator is provided with opening; Be provided with described plane magnetic control plate between the inwall of described vacuum chamber and the outer wall of microwave resonator, described plane magnetic control plate is arranged on the side of microwave resonator opening; Gap is provided with between described microwave resonator and plane magnetic control plate; Sample to be coated is arranged between microwave resonator and plane magnetic control plate, and described sample to be coated is arranged on the opening part of microwave resonator; At least one gas injection tube is also provided with in described microwave resonator.
2. plane magnetic control ECR according to claim 1 ?PECVD plasma source apparatus, it is characterized in that, described microwave resonator is metal material.
3. plane magnetic control ECR ?PECVD plasma source apparatus according to claim 1, it is characterized in that, described microwave antenna is cylindrical monopole microwave antenna, and the outside sleeve of microwave antenna has circular quartz pipe or vitrified pipe.
4. plane magnetic control ECR according to claim 1 ?PECVD plasma source apparatus, it is characterized in that, described arbitrary gas injection tube is provided with reactant gases spout and precursor gas spout.
5. plane magnetic control ECR according to any one of claim 1 to 4 ?PECVD plasma source apparatus, it is characterized in that, described plane magnetic control plate comprises pole shoe, at least one magnet steel, water-cooled tube, and at least one magnet steel described is adsorbed on pole shoe, and described water-cooled tube is pressed on pole shoe.
6. plane magnetic control ECR according to claim 5 ?PECVD plasma source apparatus, it is characterized in that, described magnet steel is three, comprise two both sides magnet steel and a central magnet steel, described both sides magnet steel is separately positioned on the dual-side edge of pole shoe, and described central magnet steel is arranged on the mid-way between the magnet steel of both sides.
7. plane magnetic control ECR according to claim 5 ?PECVD plasma source apparatus, it is characterized in that, described plane magnetic control plate also comprises protective guard, and described pole shoe, at least one magnet steel and water-cooled tube are all arranged on the inside of protective guard.
8. plane magnetic control ECR according to claim 7 ?PECVD plasma source apparatus, it is characterized in that, described pole shoe is soft magnetic materials, and described magnet steel is hard magnetic material, and described protective guard is non-magnetic material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310047937.XA CN103114278B (en) | 2013-02-06 | 2013-02-06 | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device |
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| CN201310047937.XA CN103114278B (en) | 2013-02-06 | 2013-02-06 | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device |
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| CN103114278B true CN103114278B (en) | 2014-12-24 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088196A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Large-area and high-density microwave plasma generating device |
| CN107475692A (en) * | 2017-08-14 | 2017-12-15 | 甘志银 | A kind of diamond thin microwave plasma CVD method and device |
| CN109302791B (en) * | 2018-10-26 | 2023-08-22 | 中国科学院合肥物质科学研究院 | Microwave antenna regulation and control magnetic enhancement linear plasma source generation system |
| DE102019111908B4 (en) * | 2019-05-08 | 2021-08-12 | Dreebit Gmbh | ECR ion source and method for operating an ECR ion source |
| CN110234195A (en) * | 2019-07-18 | 2019-09-13 | 中国科学技术大学 | Resonant cavity type ecr plasma source device and method |
| CN113025998B (en) * | 2019-12-24 | 2023-09-01 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
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| CN2440264Y (en) * | 1999-12-31 | 2001-07-25 | 中国科学院近代物理研究所 | Single-electric-charge state ECR ion source |
| CN1647593A (en) * | 2002-04-09 | 2005-07-27 | Nttafty株式会社 | ECR plasma source and ECR plasma device |
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| CN101713065A (en) * | 2009-12-13 | 2010-05-26 | 大连理工大学 | Device for microwave plasma based low-energy ion implantation on internal surface of metal round pipe with small pipe diameter |
| CN101978095A (en) * | 2008-03-18 | 2011-02-16 | 应用材料股份有限公司 | Coaxial microwave assisted deposition and etch systems |
| CN203200337U (en) * | 2013-02-06 | 2013-09-18 | 上海君威新能源装备有限公司 | Planar magnetron ECR (Electron Cyclotron Resonance)-PECVD (Plasma Enhanced Chemical Vapor Deposition) plasma source device |
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2013
- 2013-02-06 CN CN201310047937.XA patent/CN103114278B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2440264Y (en) * | 1999-12-31 | 2001-07-25 | 中国科学院近代物理研究所 | Single-electric-charge state ECR ion source |
| CN1647593A (en) * | 2002-04-09 | 2005-07-27 | Nttafty株式会社 | ECR plasma source and ECR plasma device |
| CN101578683A (en) * | 2006-11-02 | 2009-11-11 | 陶氏康宁公司 | Method and apparatus for forming a film by deposition from a plasma |
| CN101978095A (en) * | 2008-03-18 | 2011-02-16 | 应用材料股份有限公司 | Coaxial microwave assisted deposition and etch systems |
| CN101713065A (en) * | 2009-12-13 | 2010-05-26 | 大连理工大学 | Device for microwave plasma based low-energy ion implantation on internal surface of metal round pipe with small pipe diameter |
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Inventor after: Xia Shiwei Inventor after: Wu Changchuan Inventor after: Yuan Xiao Inventor before: Xia Shiwei Inventor before: Wu Changchuan |
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