CN102395243A - Inductance coupling plasma device for improving uniformity and efficiency of plasmon - Google Patents
Inductance coupling plasma device for improving uniformity and efficiency of plasmon Download PDFInfo
- Publication number
- CN102395243A CN102395243A CN2011103192527A CN201110319252A CN102395243A CN 102395243 A CN102395243 A CN 102395243A CN 2011103192527 A CN2011103192527 A CN 2011103192527A CN 201110319252 A CN201110319252 A CN 201110319252A CN 102395243 A CN102395243 A CN 102395243A
- Authority
- CN
- China
- Prior art keywords
- baffle plate
- plasma reactor
- gas
- insulating material
- support device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Plasma Technology (AREA)
Abstract
The invention provides an inductance coupling plasma reactor. The reactor comprises a sealed casing, a substrate support device, a radio frequency power transmitting device, a plurality of gas injectors and a ring-shaped baffle, wherein at least the partial top plate of the sealed casing is an insulated material window made of insulated material; the substrate support device is arranged below the insulated material window in the sealed casing; the radio frequency power transmitting device is located above the insulated material window, and is used for the radio frequency to perforate the insulated material window to enter the sealed casing; the plurality of gas injectors are uniformly distributed above the substrate support device to provide a treatment gas for the sealed casing; and the ring-shaped baffle is arranged in the casing, above the substrate support device and below the plurality of the gas injectors to lead the treatment gas to flow.
Description
Technical field
The present invention relates to plasma reactor, particularly relate to the design that the gas homogeneous in the inductance coupling high reactor distributes.
Background technology
Plasma reactor or reaction chamber are known in the art, and are widely used in semiconductor integrated circuit, flat-panel monitor, and light-emitting diode (LED) is in the process industry of solar cell etc.In plasma chamber, can apply a radio-frequency power supply usually to produce and to keep plasma in reaction chamber.Wherein, have many different modes to apply radio-frequency power, the design of each different modes all will cause different characteristic, such as efficient, plasma dissociate, homogeneity or the like.Wherein, a kind of design is inductance coupling high (ICP) plasma chamber.
In the inductively coupled plasma process chamber, one normally the antenna of coiled type be used in reaction chamber, launching RF energy.For the radio-frequency power from antenna is coupled in the reaction chamber, place an insulating material window at the antenna place.Reaction chamber can be handled various substrates, and such as Silicon Wafer etc., substrate is fixed on the chuck, and plasma produces above substrate.Therefore, antenna is placed on reactor top board top, makes that the reaction chamber top board is to be processed or comprised an insulating material window by insulating material.
In the plasma treatment chamber, all gases is injected in the reaction chamber, so that chemical reaction between ion and the substrate and/or physical action can be used on said substrate, form various feature structures, such as etching, deposition or the like.In many technological processes, a very important index is the inner processing homogeneity of wafer.Just, a technological process that acts on the substrate center zone should be identical or highly close with the technological process that acts on the substrate edge zone.Therefore, for example, when carrying out technological process, the etching rate in crystal circle center zone should be identical with the etching rate in crystal round fringes zone.
A parameter that helps to obtain better technology homogeneity is an equally distributed processing gas in reaction chamber.Obtain such homogeneity, the gas spray head that is installed in the wafer top is adopted in many reaction chamber designs, handles gas with uniform injection.Yet, as stated, must comprise that at inductance coupling high (ICP) reaction chamber top board one makes radio-frequency power be transmitted into the insulation windows the reaction chamber from antenna.Therefore, do not reserve the function that corresponding space realizes that its gas evenly injects in the structure of ICP to the gas spray head.
Fig. 1 shows the sectional view of existing inductance coupling high reaction chamber design.ICP reaction chamber 100 comprises and is metal sidewall cylindraceous 105 and insulation top board 107 basically, the airtight space that formation can be vacuumized by apparatus for vacuum producing 125.Pedestal 110 supports chuck 115, and said chuck 115 supports pending substrate 120.Radio-frequency power from radio frequency power source 145 is applied to the antenna 140 that is coiled type.Processing gas from source of the gas 150 is supplied in the reaction chamber through pipeline 155, lighting and to keep plasma, and thus substrate 120 is processed.In standard inductor coupled reaction chamber, gas together injects through the injector/shower nozzle around the reaction chamber 130 and one of middle shower nozzle 135 or both and is fed in the vacuum tank.
Can know from Fig. 1, extracted out 120 surface in a large number from the gas of peripheral shower nozzle 130.Therefore, possibly realize processing from a large amount of gases that peripheral shower nozzle 130 injects, but almost not have to reach the central area of wafer 120 that this can cause inhomogeneity to the crystal round fringes zone.On the contrary, a large amount of gases that center shower nozzle 135 injects concentrate on crystal circle center and do not arrive fringe region, also can cause inhomogeneity.
Therefore, need a kind of improvement inductance coupling high reaction chamber design in the industry, can optimize the interior distribution of gas of reaction chamber to improve the homogeneity of processing technology.
Summary of the invention
Summary of the invention of the present invention only provides a basic comprehension to part of the present invention aspect and characteristics.It is not to extensive overview ot of the present invention, neither be used to particularly point out key element of the present invention or illustrate scope of invention.Its unique purpose is the notions of simplifying more of the present invention that appear, for follow-up detailed description the present invention makes place mat.
According to an aspect of the present invention; A kind of plasma reactor is provided, and it comprises closure casing, insulation windows; Be arranged on the radio-frequency antenna of insulation windows top; A plurality of air injectors (gas injectors) air feed in said closure casing is arranged at the baffle plate in the said closure casing, and it is used for limiting or guiding the gas flow from air injector.
According to an aspect of the present invention, an inductively coupled plasma reactor is provided, wherein, has comprised closure casing, at least a portion of wherein said closure casing top board constitutes an insulating material window.The substrate support device is arranged in the said closure casing and the below of said insulating material window.The radio-frequency power emitter is arranged on the said insulating material window, to launch radio-frequency power and to make it pass said insulating material window in closure casing.A plurality of air injectors are evenly distributed on said substrate support device top, handle gas in said closure casing to provide.Be arranged at the ring baffle in the closure casing, it is positioned at said substrate support device top and a plurality of air injector below, flows with direct process gas.According to another aspect of the present invention, said baffle plate can be by being processed by conductor or insulating material.Can be such as baffle plate by anodized aluminium, pottery, quartz etc. are processed.
According to another aspect of the present invention, baffle plate can be the ring plate of band central opening.Said baffle plate also can comprise the secondary openings that is distributed in central opening surrounding.Said baffle plate can comprise the extension that begins to extend from said central opening.Said extension can be columnar also can be conical, or the like.Said baffle plate can be integrated advances a radio-frequency antenna.Said baffle plate can be integrated this radio-frequency antenna in insulating material, and the one side of baffle plate also can be that the RF energy that makes radio-frequency power emitter or radio-frequency antenna on the insulation windows produce that conductor material is processed can't pass this conductor layer.Said baffle plate can be above said substrate support device moves vertically, thus be able to change and substrate between the gap.
According to a further aspect of the invention; A kind of method of on substrate, making semiconductor device is provided; Comprise and placing on the substrate support device of substrate in plasma reactor that wherein plasma reactor comprises closure casing, it comprises columniform sidewall and top board; At least a portion of its top board constitutes an insulating material window; Be positioned at the radiofrequency launcher of said insulating material window top, it is used to launch radio-frequency power and makes it pass said insulating material window and arrives in the said closure casing, a plurality of above substrate equally distributed air injector; In closure casing, place ring baffle,, thereby between said baffle plate and said substrate, directly form a gap so that said baffle plate is positioned at the below of substrate support device top and a plurality of air injectors; Toward air injector reacting gas is provided; Apply radio-frequency power to radiofrequency launcher.
Description of drawings
Accompanying drawing is as the part of specification of the present invention, illustration embodiments of the invention, and explain and explain principle of the present invention with specification.Accompanying drawing is explained the principal character of embodiment for example with way of illustration.Accompanying drawing is not to be used for describing all characteristics of practical embodiments to be not used in the relative size between the key diagram element yet, neither draw in proportion.
Fig. 1 is the sectional view of the inductance coupling high reaction chamber of prior art;
Fig. 2 is the sectional view of the inductance coupling high reaction chamber of the embodiment of the invention;
Fig. 3 is the sectional view of the inductance coupling high reaction chamber of second embodiment of the invention;
Fig. 4 is the sectional view of third embodiment of the invention inductance coupling high reaction chamber;
Fig. 5 is the sectional view of fourth embodiment of the invention inductance coupling high reaction chamber;
Fig. 6 is the sectional view of fifth embodiment of the invention inductance coupling high reaction chamber.
Wherein, same or analogous Reference numeral is represented same or analogous device (module).
Embodiment
The embodiment that the present invention relates to the inductively coupled plasma chamber has improved homogeneity, particularly the uniformity of distribution of gas.Added preinstall apparatus in the reaction chamber in the embodiment of the invention and made in the shower nozzle effluent air, improving the distribution of gas in the reaction chamber, thereby made the homogeneity on the wafer be improved by directing flow direction again.
Hereinafter will combine Fig. 2 that one embodiment of the present of invention are described in detail.Fig. 2 illustrates plasma treatment appts 200 according to an embodiment of the invention.Except 2XX series of figures mark, the key element corresponding among Fig. 1 shown in Fig. 2 has identical Reference numeral.Should be appreciated that reaction chamber device 200 wherein only is exemplary, said 200 devices can comprise still less in fact also or additional parts that the arrangement of parts also can be different from shown in Fig. 2.
Fig. 2 shows the sectional view according to the ICP reaction chamber of first embodiment of the invention, and it has carried out the characteristics of gas controlled flow.ICP reaction chamber 200 comprises metal sidewall 205 and insulation top board 207, constitutes an airtight vacuum sealing housing, and is vacuumized by vacuum pumping pump 225.Said insulation top board 207 also can adopt other top board pattern only as an example, such as dome shape, have the metal top plate of insulating material window etc.Pedestal 210 supports chuck 215, is placing pending substrate 220 on the said chuck.Bias power is applied on the said chuck 215, but since irrelevant with the embodiment of the invention that discloses, not shown in Fig. 2.The radio-frequency power of said radio-frequency power supply 245 is applied to antenna 240, and this antenna is coiled type basically.
Handle gas and be supplied in the reaction chamber through pipelines 225, lighting and to keep plasma, thereby substrate 220 is processed from source of the gas 250.In the present embodiment, gas is supplied in the vacuum space through peripheral injector or shower nozzle 230, but extra gas also can optionally shower nozzle 235 injects reaction chambers from the center.If gas is supplied from injector 230 and shower nozzle 235 simultaneously, the gas flow of each all can independently be controlled.The setting that any of these is used for injecting gas can be described as the plasma gas injector.In Fig. 2, baffle plate 270 is arranged in the reaction chamber and distributes the gas flow from gas tip 230 with restriction and/or guiding.Shown in Reference numeral, the disc of baffle plate with holes or opening in the middle of being basically in the above-described embodiments.Said baffle plate is positioned at the gas tip below still above the substrate position.Like this, gas flows to downwards to be restricted to before the substrate and further flows in the middle of the reaction chamber, shown in dotted arrow among the figure.
Normally, said baffle plate 270 can be processed by metal material, like anodized aluminium.Make the plasma that baffle plate can help limiting said baffle plate top with metal material, because stopped propagation by said baffle plate from the RF energy of coil.On the other hand, said baffle plate 270 also can be to be processed by insulating material, such as pottery or quartzy.In adopting the embodiment of isolation baffle plate, can pass said baffle plate from radio frequency (RF) energy of coil, make plasma can be maintained at said baffle plate below (dotted portion demonstrations), it depends on the gas flow that arrives below the said baffle plate.
Under the certain applications scene, need further to limit gas flow and make gas have the more time to be positioned at top, crystal circle center position, to guarantee that above whole wafer, obtaining enough plasmas dissociates.The embodiment that has benefited from above-mentioned application is shown in Fig. 3.Except the Reference numeral that is numbered 3XX series, identical key element has identical Reference numeral among Fig. 3 and Fig. 2.Shown in Reference numeral among Fig. 3 and Fig. 3, the baffle plate 372 of present embodiment has discoidal profile and has an annular vertical direction extension 373, is a drum basically.Constitute a gap 374 between vertical stretch and substrate, can flow to the edge, surpass the peripheral zone of substrate in the cavity such as flowing to through this gap gas.The size in said gap 374 has confirmed that substrate top gas flow and gas stream spend the required time of said substrate, so that gas is dissociated by plasma.
In the embodiment shown in fig. 3, the size of the diameter d of annular opening can be identical with substrate diameter, perhaps is greater than or less than said substrate diameter.The diameter of said annular opening depends on required gas flow restriction.Simultaneously, rectangular because vertical direction annular extension is set to the disc substrate, the own opening diameter of the opening diameter of said annular extension 373 and annular disk 372 is identical.
On the other hand, need limit gas sometimes and flow out to substrate from annulus, in case but gas flows to said substrate direction, and it is peripheral mobile to cavity in the horizontal direction also need to strengthen gas sometimes.A design that has benefited from above-mentioned setting is illustrated by accompanying drawing 4.In Fig. 4, baffle plate 475 is made up of one ring-like and a conical extension 476, and said conical extension 476 has the upper shed diameter d, and it is less than the under shed diameter d of said conical extension 476 ', wherein said under shed is near substrate.Be provided with under shed with definition gap 477, gas flows towards the reaction chamber sidewall through this gap in the horizontal direction.Constitute included angle between the sidewall of tapering part and the ring part, wherein this included angle is less than 90 degree.
In above-mentioned arbitrary embodiment, possibly let portion gas before arriving the baffle plate central opening, flow out sometimes.Fig. 5 shows the 4th embodiment part embodiment illustrated in fig. 2 is revised.As shown in Figure 5, baffle plate 578 is to have a central opening dish configuration, and some is similar to baffle plate shown in Figure 2 272.The diameter of said middle opening can with Fig. 2 in identical or different.In addition, auxiliary/secondary openings 589 is arranged on said central opening limit, so that portion gas leaks down before arriving said central opening.The diameter of said secondary openings can be less than the diameter of said central opening.Said secondary openings can be applied to aforementioned arbitrary embodiment, and can evenly be provided with at central opening surrounding.Such as, Fig. 5 show with Fig. 3 in flapper type like improved baffle plate 558, except around extension, having added the arrangement of secondary openings, so that gas leaks under before arriving central opening and flows to said extension.
In the above-described embodiments, said baffle plate is used for the control and treatment gas flow.In addition, said baffle plate also can be used for controlling passively plasma.Usually, plasma can be diffused into the reaction chamber bottom through the hole on the said baffle plate.Described hole is big more, and said plasma concentration is high more.Through changing the quantity and the position of described hole, the plasma concentration that in reaction chamber, distributes also can change simultaneously.Said baffle plate also can be used for the said plasma of ACTIVE CONTROL.Fig. 6 shows the foregoing description.
In the embodiment shown in fig. 6, baffle plate 680 is used for the ACTIVE CONTROL plasma.As shown in the figure, secondary antenna 682 embeds in the said baffle plate 680.Said auxiliary antenna can be coiled type.As shown in the figure, said antenna can be (being shown in broken lines among the figure) of one-turn coil, but also can adopt other design.Said auxiliary antenna can equally adopt power supply 645 (shown in the dotted arrow) power supply with main antenna, perhaps adopts 647 power supplies of a different radio-frequency power supply.No matter adopt what power supply power supply, the power magnitude (amplitude) that is applied on the said auxiliary antenna 682 is to be independent of outside the power that is applied to main antenna 640 to control.
According to the foregoing description, said baffle plate 680 is to be processed by insulating material, and said coil embeds this insulating material.Such as, baffle plate 680 can be to be processed by the ceramic material of sintering, wherein wire coil embeds said ceramic material.So, can put on the plasma of baffle plate above and below from the power of secondary coil.On the other hand, according to another embodiment, said baffle plate 680 can be that the insulating material another side is that conductor material is processed by one side also, so that radio-frequency power can only be applied to the wherein one side of baffle plate.Such as, the upper strata of said baffle plate 680 can be processed by conductor material, so that only be applied in the plasma of said baffle plate below from the radio-frequency power of secondary coil 682.This design can be illustrated by Fig. 6; Wherein coil 682 embeds ceramic disk 685; Make the RF energy that produces in the said coil can be applied to the plasma of said baffle plate below; But conductor disc 683 is arranged at said ceramic disk 685 tops, and feasible RF energy from said coil 682 can't put on said baffle plate top.In addition, this project organization can stop that also the RF energy that main coil 640 produces puts on said baffle plate 680 belows.Therefore, the RF energy of said main antenna 640 can be by adjustment (like frequency, power etc.) to control the plasma of said baffle plate 680 tops, and the RF energy of secondary antenna 680 can be adjusted the plasma of controlling said baffle plate below simultaneously.
Aforementioned any embodiment can do a nearly step and improve, and baffle plate is become movably.This design is illustrated by Fig. 6.Stepping motor 690 among Fig. 6 is coupled to baffle plate 680 through for example rack and pinion and so on mechanism, makes said stepping motor 690 to switch on and vertically drive said baffle plate to move up and down, and makes that the space between said baffle plate 680 and the substrate 620 can be adjusted.
Should be appreciated that handling process that the present invention mentions and the specific device that technology is not limited to mention also can be the combinations that realizes a plurality of parts of the present invention.Further, various types of common apparatus also can be used in technology of the present invention.The invention describes a plurality of specific embodiments, these embodiment have explained content of the present invention in all fields, and it is not the restriction to content of the present invention.It will be appreciated by those skilled in the art that except the present invention give an example the son, also have a lot of different combinations can be suitable for the present invention.
In addition, those skilled in the art can easily expect other implementation through to the understanding of specification of the present invention with to practice of the present invention.Various aspects and/or parts can be used by independent employing or combined among a plurality of embodiment described herein.It is emphasized that specification and embodiment only as giving an example, actual scope and the thinking of the present invention defines through following claim.
Claims (8)
1. plasma reactor wherein, comprising:
Closure casing, it comprises top board, said top board constitutes an insulating material window;
The substrate support device is arranged at the insulating material window below in the said closure casing;
The radio-frequency power emitter is arranged at said insulating material window top, arrives in the said closure casing with the emission RF energy;
Air injector is used in said closure casing activity's body of regulating the flow of vital energy,
Baffle plate is arranged in the said closure casing and said substrate support device top and said air injector below, with the limit processing gas flow.
Said baffle plate comprises embedding secondary radio frequency antenna wherein.
2. plasma reactor according to claim 1 is characterized in that, said baffle plate is a disk that has central opening.
3. plasma reactor according to claim 2 is characterized in that, said baffle plate comprises one further from the extension of said central opening to the vertical direction of said substrate support device place extension.
4. plasma reactor according to claim 1 is characterized in that, the width in the gap between said baffle plate and the said substrate support device is adjustable.
5. plasma reactor according to claim 1 is characterized in that said baffle plate is processed by insulating material.
6. plasma reactor according to claim 5 is characterized in that, said insulating material comprises anodized aluminium, pottery and quartzy each.
7. plasma reactor according to claim 1 is characterized in that, said baffle plate comprises the insulating disc that embeds the secondary radio frequency antenna, comprises that also one is arranged at the wherein conductor disc of one side of baffle plate, passes said conductor disc to stop RF energy.
8. plasma reactor according to claim 1 is characterized in that, the power that is applied to radio-frequency power emitter and said auxiliary radio-frequency antenna is separate control.
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103192527A CN102395243A (en) | 2011-10-19 | 2011-10-19 | Inductance coupling plasma device for improving uniformity and efficiency of plasmon |
| US13/337,248 US9095038B2 (en) | 2011-10-19 | 2011-12-26 | ICP source design for plasma uniformity and efficiency enhancement |
| TW100149971A TW201318024A (en) | 2011-10-19 | 2011-12-30 | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma |
| TW101129384A TW201318063A (en) | 2011-10-19 | 2012-08-14 | Inductance coupling plasma device for improving uniformity and efficiency of plasmon |
| KR1020120112872A KR20130043062A (en) | 2011-10-19 | 2012-10-11 | Inductively-coupled plasma reactor for plasma uniformity and efficiency enhancement and method for manufacturing semiconductor substrate using the device |
| JP2012231630A JP5607699B2 (en) | 2011-10-19 | 2012-10-19 | Design of an inductively coupled plasma source to improve plasma uniformity and effectiveness. |
| US14/066,631 US9431216B2 (en) | 2011-10-19 | 2013-10-29 | ICP source design for plasma uniformity and efficiency enhancement |
| KR1020150127674A KR20150108344A (en) | 2011-10-19 | 2015-09-09 | Inductively-coupled plasma reactor for plasma uniformity and efficiency enhancement and method for manufacturing semiconductor substrate using the device |
| US15/207,495 US20160322205A1 (en) | 2011-10-19 | 2016-07-11 | Icp source design for plasma uniformity and efficiency enhancement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103192527A CN102395243A (en) | 2011-10-19 | 2011-10-19 | Inductance coupling plasma device for improving uniformity and efficiency of plasmon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102395243A true CN102395243A (en) | 2012-03-28 |
Family
ID=45862417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103192527A Pending CN102395243A (en) | 2011-10-19 | 2011-10-19 | Inductance coupling plasma device for improving uniformity and efficiency of plasmon |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102395243A (en) |
| TW (1) | TW201318063A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103796413A (en) * | 2012-11-01 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
| CN103874314A (en) * | 2012-12-17 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma device |
| TWI556308B (en) * | 2013-02-17 | 2016-11-01 | A plasma reactor with improved gas distribution | |
| CN117080062A (en) * | 2023-10-13 | 2023-11-17 | 无锡邑文微电子科技股份有限公司 | Bowl-shaped etching method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW510149B (en) * | 1998-06-30 | 2002-11-11 | Lam Res Corp | Multiple coil antenna for inductively coupled plasma-generation systems |
| US20040045669A1 (en) * | 2002-02-06 | 2004-03-11 | Tomohiro Okumura | Plasma processing method and apparatus |
| WO2004059716A1 (en) * | 2002-12-20 | 2004-07-15 | Lam Research Corporation | A system and method for controlling plasma with an adjustable coupling to ground circuit |
| JP2005142568A (en) * | 2003-11-04 | 2005-06-02 | Samsung Electronics Co Ltd | Helical resonator type plasma processing apparatus |
| CN1947216A (en) * | 2004-04-30 | 2007-04-11 | 艾克塞利斯技术公司 | Multi-piece baffle plate assembly for a plasma processing system |
| EP1860680A1 (en) * | 2006-05-22 | 2007-11-28 | New Power Plasma Co., Ltd. | Inductively coupled plasma reactor |
| CN101218859A (en) * | 2005-07-19 | 2008-07-09 | 显示器生产服务株式会社 | Plasma reactor having multiple antenna coil set |
| CN101663421A (en) * | 2007-04-27 | 2010-03-03 | 应用材料股份有限公司 | Annular baffle |
| CN101797394A (en) * | 2009-02-09 | 2010-08-11 | 王龙哲 | Radio-frequency inductance coupling plasma sterilizer |
| CN101805895A (en) * | 2010-03-31 | 2010-08-18 | 河北大学 | Helicon wave plasma enhanced chemical vapor deposition unit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729890A (en) * | 1993-07-08 | 1995-01-31 | Kokusai Electric Co Ltd | Plasma producing equipment |
| JP2638443B2 (en) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | Dry etching method and dry etching apparatus |
| JP2001267248A (en) * | 2000-03-15 | 2001-09-28 | Shibaura Mechatronics Corp | Semiconductor processor |
-
2011
- 2011-10-19 CN CN2011103192527A patent/CN102395243A/en active Pending
-
2012
- 2012-08-14 TW TW101129384A patent/TW201318063A/en unknown
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW510149B (en) * | 1998-06-30 | 2002-11-11 | Lam Res Corp | Multiple coil antenna for inductively coupled plasma-generation systems |
| US20040045669A1 (en) * | 2002-02-06 | 2004-03-11 | Tomohiro Okumura | Plasma processing method and apparatus |
| WO2004059716A1 (en) * | 2002-12-20 | 2004-07-15 | Lam Research Corporation | A system and method for controlling plasma with an adjustable coupling to ground circuit |
| JP2005142568A (en) * | 2003-11-04 | 2005-06-02 | Samsung Electronics Co Ltd | Helical resonator type plasma processing apparatus |
| CN1947216A (en) * | 2004-04-30 | 2007-04-11 | 艾克塞利斯技术公司 | Multi-piece baffle plate assembly for a plasma processing system |
| CN101218859A (en) * | 2005-07-19 | 2008-07-09 | 显示器生产服务株式会社 | Plasma reactor having multiple antenna coil set |
| EP1860680A1 (en) * | 2006-05-22 | 2007-11-28 | New Power Plasma Co., Ltd. | Inductively coupled plasma reactor |
| CN101663421A (en) * | 2007-04-27 | 2010-03-03 | 应用材料股份有限公司 | Annular baffle |
| CN101797394A (en) * | 2009-02-09 | 2010-08-11 | 王龙哲 | Radio-frequency inductance coupling plasma sterilizer |
| CN101805895A (en) * | 2010-03-31 | 2010-08-18 | 河北大学 | Helicon wave plasma enhanced chemical vapor deposition unit |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103796413A (en) * | 2012-11-01 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
| CN103796413B (en) * | 2012-11-01 | 2017-05-03 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
| CN103874314A (en) * | 2012-12-17 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma device |
| CN103874314B (en) * | 2012-12-17 | 2016-10-05 | 中微半导体设备(上海)有限公司 | A kind of inductively coupled plasma device |
| TWI556308B (en) * | 2013-02-17 | 2016-11-01 | A plasma reactor with improved gas distribution | |
| CN117080062A (en) * | 2023-10-13 | 2023-11-17 | 无锡邑文微电子科技股份有限公司 | Bowl-shaped etching method |
| CN117080062B (en) * | 2023-10-13 | 2024-01-26 | 无锡邑文微电子科技股份有限公司 | Bowl-shaped etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201318063A (en) | 2013-05-01 |
| TWI495004B (en) | 2015-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102355792A (en) | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma | |
| CN103796413A (en) | Plasma reactor and method for manufacturing semiconductor substrate | |
| TW201318024A (en) | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma | |
| CN100394535C (en) | High-density plasma processing apparatus | |
| KR101246170B1 (en) | Injection member used in manufacturing semiconductor device and plasma processing apparatus having the same | |
| KR20080006650A (en) | Plasma processing apparatus and method | |
| US9536710B2 (en) | Tunable gas delivery assembly with internal diffuser and angular injection | |
| CN102395243A (en) | Inductance coupling plasma device for improving uniformity and efficiency of plasmon | |
| CN103997843A (en) | Plasma reactor improving gas distribution | |
| CN202616186U (en) | Inductive coupling plasma etching chamber | |
| TW202136569A (en) | High density plasma enhanced chemical vapor deposition chamber | |
| KR101562192B1 (en) | Plasma reactor | |
| KR101670804B1 (en) | Showerhead and substrate processing apparatus having the same | |
| CN104241070A (en) | Gas injection device used for inductively couple plasma chamber | |
| CN103874314A (en) | Inductively coupled plasma device | |
| CN103915307B (en) | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber | |
| TWI633811B (en) | Plasma processing device and method for processing semiconductor substrate | |
| CN114242551A (en) | Air inlet assembly and plasma processing device thereof | |
| KR101173573B1 (en) | Gas distribution plate which controls gas distribution and substrate process apparatus using the same | |
| KR20170133670A (en) | Gas distributor and substrate processing apparatus | |
| KR20100052970A (en) | Mobility plasma control system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120328 |